Power module

Abstract

SOLUTION: A power module may include an insulating substrate, a first power semiconductor mounted on the insulating substrate, a first conductor that overlaps at least a part of the first power semiconductor in plan view, is electrically connected to a first terminal of the first power semiconductor, and extends in a first direction along a surface of the insulating substrate, a current sensor that is disposed so as to at least partially overlap or at least partially surround the first conductor in plan view and outputs a signal corresponding to a magnitude of a magnetic field generated by a measurement current flowing through the first conductor as a signal indicating a current value of the measurement current, a sealing part that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor in a state where the first conductor and the current sensor are insulated from each other, and a first external terminal that is electrically connected to the first conductor and is exposed from the sealing part. The current sensor may be arranged between the first external terminal and the first power semiconductor in the first direction in plan view.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a power module.

Background Art

[0002] Patent Document 1 describes mounting a magnetic sensor on a substrate on which a semiconductor die such as an IGBT is mounted. Patent Document 2 describes arranging a current sensor at a position facing each conductor that outputs three-phase AC power. Patent Document 3 describes fixing a current sensor module to a frame on which a substrate mounting a power semiconductor is installed. [Prior Art Documents] [Patent Documents] [Patent Document 1] U.S. Patent No. 9,678,173 [Patent Document 2] Japanese Unexamined Patent Application Publication No. 2023-138260 [Patent Document 3] U.S. Patent Application Publication No. 2022 / 0262773

Summary of the Invention

Problems to be Solved by the Invention

[0003] While suppressing the increase in size of a power module having a power semiconductor, it is desired to provide a current sensor in the power module.

Means for Solving the Problems

[0004] A power module according to one aspect of the present invention may include an insulating substrate. The power module may include a first power semiconductor mounted on the insulating substrate. The power module may include a first conductor that overlaps with the first power semiconductor in plan view, is electrically connected to a first terminal of the first power semiconductor, and extends in a first direction along the surface of the insulating substrate. The power module may include a current sensor that, in plan view, is arranged to overlap with or surround the first conductor in at least a portion, and outputs a signal indicating the current value of the measured current, corresponding to the magnitude of the magnetic field generated by the measured current flowing through the first conductor. The power module may include a sealing portion that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor in a state where the first conductor and the current sensor are insulated. The power module may include a first external terminal that is electrically connected to the first conductor and exposed from the sealing portion. In plan view, the current sensor may be arranged between the first external terminal and the first power semiconductor in the first direction.

[0005] The power module may include at least one set of input / output terminals exposed from the sealing portion. The power module may further include at least one set of input / output conductors that transmit signals output from the current sensor, having a first portion that extends in a second direction along the insulating substrate and intersecting the first direction in a plan view and is electrically connected to the current sensor, and a second portion that is connected to the first portion and at least one of the at least one set of input / output terminals. The second portion does not need to overlap with the first conductor in a plan view.

[0006] In any of the power modules, the first external terminal may be exposed on the first side surface of the sealing portion. The at least one pair of input / output terminals may be exposed from the sealing portion on the first side surface of the sealing portion, relative to the first power semiconductor.

[0007] In any of the power modules, the first external terminal and the at least one pair of input / output terminals may be exposed on the first side of the sealing portion. At least a portion of the second portion may extend along the first direction. The power module may include at least one pair of input and output terminals exposed from the sealing portion, an input conductor having, in plan view, a first portion that runs along the insulating substrate and extends in a second direction intersecting the first direction and is electrically connected to the current sensor, and a second portion that is connected to the first portion and the input terminal, and an output conductor having, in plan view, a first portion that runs along the insulating substrate and extends in a second direction intersecting the first direction and is electrically connected to the current sensor, and a second portion that is connected to the first portion and the output terminal.

[0008] In any of the power modules, the first portion may be a wire. The second portion may be a conductive pattern provided on the insulating substrate. The current sensor may be electrically connected to the conductive pattern via the wire.

[0009] In any of the power modules, the first and second portions may be conductive patterns provided on the insulating substrate. The current sensor may be soldered or flip-chip bonded to the first portion.

[0010] In any of the aforementioned power modules, the first power semiconductor may be arranged on the first conductor.

[0011] In any of the power modules, the first conductor may be provided on the insulating substrate.

[0012] In any of the power modules, an insulating layer may be further provided between the current sensor and the first conductor.

[0013] In any of the power modules, the insulating layer may be an adhesive for bonding the current sensor and the first conductor.

[0014] In any of the aforementioned power modules, the insulating layer may be an insulating resin that constitutes the sealing portion.

[0015] In any of the power modules, the current sensor may include at least one magnetoelectric conversion element and a signal processing IC that processes the signal output from the at least one magnetoelectric conversion element.

[0016] In any of the aforementioned power modules, the current sensor may be a coreless current sensor.

[0017] In any of the power modules, the current sensor may be a semiconductor package in which the at least one magnetoelectric conversion element and the signal processing IC are sealed in molded resin.

[0018] In any of the power modules, the at least one magnetoelectric conversion element may be electrically connected to the signal processing IC by wire bonding.

[0019] In any of the power modules, the current sensor may have two magnetoelectric elements of the longitudinal magnetic field detection type. The current sensor may be arranged such that, in a plan view, at least a portion of the first conductor overlaps with or at least a portion of the first conductor, with the two magnetoelectric elements facing each other along the insulating substrate and in a second direction intersecting the first direction.

[0020] In any of the power modules, the current sensor may have at least one magnetoelectric element of the transverse magnetic field detection type. The current sensor may be positioned such that the at least one magnetoelectric element overlaps with the first conductor in a plan view.

[0021] Any one of the power modules may include the first terminal of the first power semiconductor and the first conductor, and a second power semiconductor to which a second terminal is electrically connected. The power module may be provided on the insulating substrate and may include a second conductor electrically connected to the second terminal of the first power semiconductor. The power module may be provided on the insulating substrate and may include a third conductor that at least partially overlaps with the second power semiconductor in a plan view and is electrically connected to the first terminal of the second power semiconductor. The power module may include a second external terminal that is exposed from the sealing portion and is electrically connected to the second conductor. The power module may include a third external terminal that is exposed from the sealing portion and is electrically connected to the third conductor.

[0022] Any one of the power modules may include a plurality of the first power semiconductors. The power module may include a plurality of the second power semiconductors. The power module may include a plurality of the first conductors. The power module may include a plurality of the current sensors.

[0023] Note that the above summary of the invention does not list all the features of the present invention. Also, sub-combinations of these feature groups may also be inventions.

Brief Description of the Drawings

[0024] [Figure 1] It is a diagram showing an example of the circuit configuration of the power module according to the present embodiment. [Figure 2] It is a plan view schematically showing an example of the internal configuration of the power module according to the present embodiment. [Figure 3] It is a diagram schematically showing a part of a cross-sectional view of the power module viewed from the side in the X direction. [Figure 4] It is a perspective view schematically showing a current sensor, a conductor, and an input / output conductor. [Figure 5] It is a diagram according to a modified example schematically showing a part of a cross-sectional view of the power module viewed from the side in the X direction. [Figure 6]Figure 5 is a schematic perspective view showing the current sensor, conductor, and input / output conductors in a modified example. [Figure 7A] This figure shows an example of the shape of a conductor. [Figure 7B] This figure shows an example of the shape of a conductor. [Figure 7C] This figure shows an example of the shape of a conductor. [Figure 7D] This figure shows an example of the shape of a conductor. [Figure 8] This figure shows an example of how to install a current sensor according to a modified example. [Figure 9] This figure shows an example of how to install a current sensor according to a modified example. [Figure 10] This diagram schematically shows an example of the internal configuration of a power module related to a modified example. [Figure 11] This diagram schematically shows an example of the internal configuration of a power module related to a modified example. [Modes for carrying out the invention]

[0025] The present invention will be described below through embodiments, but these embodiments are not intended to limit the scope of the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0026] Figure 1 shows an example of the circuit configuration of the power module 100 according to this embodiment. The power module 100 is a three-phase inverter that converts DC to three-phase AC. The three-phase AC output from the power module 100 is supplied to a motor 60, which is a three-phase AC motor. The motor 60 may be a power source for a mobile vehicle. The power module 100 and the motor 60 may be mounted on a mobile vehicle such as a hybrid vehicle or an electric vehicle. Depending on the application, the power module 100 may also be a single-phase inverter that converts DC to AC.

[0027] The power module 100 comprises a U-phase circuit 10U, a V-phase circuit 10V, and a W-phase circuit 10W. The U-phase circuit 10U has a high-side power semiconductor 12U and a low-side power semiconductor 14U connected in series. The source or emitter of power semiconductor 12U is electrically connected to the drain or collector of power semiconductor 14U. If power semiconductors 12U and 14U are, for example, MOSFETs, the source of power semiconductor 12U is electrically connected to the drain of power semiconductor 14U. If power semiconductors 12U and 14U are, for example, IGBTs, the emitter of power semiconductor 12U is electrically connected to the collector of power semiconductor 14U. In the present invention, the first terminal is, in one example, the drain or collector, and the second terminal is, in one example, the source or emitter.

[0028] The V-phase circuit 10V has a high-side power semiconductor 12V and a low-side power semiconductor 14V connected in series. The source or emitter of power semiconductor 12V is electrically connected to the drain or collector of power semiconductor 14V. The W-phase circuit 10W has a high-side power semiconductor 12W and a low-side power semiconductor 14W connected in series. The source or emitter of power semiconductor 12W is electrically connected to the drain or collector of power semiconductor 14W.

[0029] The power module 100 includes a pair of DC terminals 32 and 34, as well as a U-phase terminal 30U, a V-phase terminal 30V, and a W-phase terminal 30W (sometimes collectively referred to as terminal 30). DC terminal 32 is an example of a second external terminal. DC terminal 34 is an example of a third external terminal. Furthermore, U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W are examples of first external terminals. The power module 100 further includes a high-side conductor 20 electrically connected to DC terminal 32, and a low-side conductor 22 electrically connected to DC terminal 34. Conductor 20 is an example of a third conductor. Conductor 22 is an example of a second conductor. Conductors 20 and 22 may be made of a conductive material mainly composed of copper.

[0030] The U-phase circuit 10U, the V-phase circuit 10V, and the W-phase circuit 10W are connected in parallel between conductor 20 and conductor 22. The drain or collector of the high-side power semiconductors 12U, 12V, and 12W (sometimes collectively referred to as power semiconductor 12) is electrically connected to conductor 20. The source or emitter of the low-side power semiconductors 14U, 14V, and 14W (sometimes collectively referred to as power semiconductor 14) is electrically connected to conductor 22.

[0031] The power module 100 further comprises a conductor 24U electrically connected to the U-phase terminal 30U, a conductor 24V electrically connected to the V-phase terminal 30V, and a conductor 24W electrically connected to the W-phase terminal 30W. The source or emitter of power semiconductor 12U and the drain or collector of power semiconductor 14U are electrically connected to conductor 24U. The source or emitter of power semiconductor 12V and the drain or collector of power semiconductor 14V are electrically connected to conductor 24V. The source or emitter of power semiconductor 12W and the drain or collector of power semiconductor 14W are electrically connected to conductor 24W.

[0032] Conductors 24U, 24V, and 24W (sometimes collectively referred to as conductor 24) are electrically connected to the motor 60 via busbars 40U, 40V, and 40W. Conductors 24U, 24V, and 24W are provided on an insulating substrate 11. Conductors 24U, 24V, and 24W are examples of first conductors. Conductor 24 may be made of a conductive material mainly composed of copper.

[0033] The power module 100 is further equipped with current sensors 50U, 50V, and 50W (sometimes collectively referred to as current sensor 50). Current sensor 50U measures the current value of the U-phase current flowing through conductor 24U. Current sensor 50V measures the current value of the V-phase current flowing through conductor 24V. Current sensor 50W measures the current value of the W-phase current flowing through conductor 24W.

[0034] The current sensors 50U, 50V, and 50W may be magnetic sensors having at least one magnetoelectric conversion element that detects the magnitude or change in the magnetic field generated by the U-phase current, V-phase current, and W-phase current flowing through the conductors 24U, 24V, and 24W. The current sensors 50U, 50V, and 50W further include a signal processing IC that outputs a signal indicating the current values ​​of the U-phase current, V-phase current, and W-phase current according to the magnitude of the magnetic field output from at least one magnetoelectric conversion element. The signal processing IC is a large-scale integrated circuit (LSI). The signal processing IC is a monolithic IC. More specifically, the signal processing IC is a signal processing circuit made of a Si monolithic semiconductor formed on a Si substrate. The signal processing IC may have a circuit surface on which at least one magnetoelectric conversion element is arranged. The current sensors 50U, 50V, and 50W may be a semiconductor package in which at least one magnetoelectric conversion element and the signal processing IC are sealed with molded resin. At least one magnetoelectric element and the signal processing IC do not need to be sealed in molded resin. Current sensors 50U, 50V, and 50W may also be current sensors in which at least one magnetoelectric element and the signal processing IC are exposed on an insulating substrate. At least one magnetoelectric element may be electrically connected to the signal processing IC by wire bonding.

[0035] The current sensors 50U, 50V, and 50W have terminals 55 for outputting the signal processed by the signal processing IC as a current to the external input / output conductors 70U, 70V, and 70W. The terminals 55 may be exposed on the surface of the current sensors 50U, 50V, and 50W, or they may protrude from the surface of the current sensors 50U, 50V, and 50W. The current sensors 50U, 50V, and 50W function as current sensors by detecting the magnitude or change in the magnetic field generated by the U-phase current, V-phase current, and W-phase current flowing through the conductors 24U, 24V, and 24W using at least one magnetoelectric conversion element, outputting a signal from the signal processing IC corresponding to the magnitude of the magnetic field output from the magnetoelectric conversion element as a signal indicating the current values ​​of the U-phase current, V-phase current, and W-phase current, and outputting it to the input / output conductors 70U, 70V, and 70W via terminals 55.

[0036] The current sensors 50U, 50V, and 50W may be coreless current sensors. In this specification, a coreless current sensor is a sensor having at least one magnetoelectric conversion element that detects the magnitude or change in a magnetic field generated by a current flowing through a conductor, and is a current sensor that does not have a magnetic core arranged around the magnetic sensor or surrounding the current conductor.

[0037] In this embodiment, the power module 100 configured in this way is equipped with current sensors 50U, 50V, and 50W within the power module 100 while suppressing an increase in size.

[0038] Figure 2 is a schematic plan view showing an example of the internal configuration of the power module 100 according to this embodiment.

[0039] The power module 100 comprises an insulating substrate 11, and conductors 20, 22, U-phase conductor 24U, V-phase conductor 24V, W-phase conductor 24W, power semiconductors 12U, 14U, 12V, 14V, 12W, 14W, and current sensors 50U, 50V, 50W provided on the insulating substrate 11.

[0040] The insulating substrate 11, conductors 20 and 22, U-phase conductor 24U, V-phase conductor 24V, W-phase conductor 24W, power semiconductors 12U, 14U, 12V, 14V, 12W, 14W, and current sensors 50U, 50V, and 50W are sealed in a sealing portion 80 which is filled with an insulating resin. The insulating resin may be, for example, an epoxy resin or a silicone gel.

[0041] A pair of DC terminals 32 and 34 are exposed from one side 80a of the sealing portion 80. The U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W are exposed from the side 80b of the sealing portion 80 opposite to side 80a.

[0042] Here, the direction along the insulating substrate 11 from side 80b to side 80a is defined as the first direction (Y-axis direction). The direction along the insulating substrate 11 and intersecting the first direction is defined as the second direction (X-axis direction).

[0043] Conductor 20 is connected to DC terminal 32, and conductor 22 is connected to DC terminal 34. Conductors 20 and conductor 22 may be wiring patterns provided on the insulating substrate 11. Conductor 20 extends from DC terminal 32 in a first direction from side 80a to side 80b, and further extends in a second direction from side 80c towards side 80d, which is opposite side 80c. Conductor 22 extends from DC terminal 34 in a first direction from side 80a to side 80b, and further extends in a second direction from side 80c towards side 80d. In a plan view, conductors 20 and conductor 22 extend parallel to each other with a gap between them. Note that the shapes of conductors 20 and conductor 22 are merely examples, and other shapes are also acceptable.

[0044] Power semiconductors 12U, 12V, and 12W are arranged on conductor 20 via a conductive adhesive. The drain or collector of power semiconductors 12U, 12V, and 12W is electrically connected to conductor 20 via the conductive adhesive. The source or emitter of power semiconductors 12U, 12V, and 12W is electrically connected to conductors 24U, 24V, and 24W, respectively, via wires 17U, 17V, and 17W. Power semiconductors 12U, 12V, and 12W are examples of second power semiconductors. Wires 17U, 17V, and 17W may be formed from a conductive material mainly composed of Au, Ag, Cu, or Al.

[0045] Conductor 24U is connected to the U-phase terminal 30U, conductor 24V is connected to the V-phase terminal 30V, and conductor 24W is connected to the W-phase terminal 30W. Conductors 24U, 24V, and 24W extend in a first direction along the insulating substrate 11 from side 80b toward side 80a. Conductors 24U, 24V, and 24W may be wiring patterns provided on the insulating substrate 11. An extension portion may be provided at one end of conductors 24U, 24V, and 24W opposite to the U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W, extending toward side 80c and side 80d in a second direction.

[0046] Power semiconductors 14U, 14V, and 14W are placed on conductors 24U, 24V, and 24W via a conductive adhesive. The drain or collector of power semiconductors 14U, 14V, and 14W is electrically connected to conductors 24U, 24V, and 24W via the conductive adhesive. The source or emitter of power semiconductors 14U, 14V, and 14W is electrically connected to conductor 22 via wires 19U, 19V, and 19W. Power semiconductors 14U, 14V, and 14W are examples of first power semiconductors. Wires 19U, 19V, and 19W may be formed from a conductive material mainly composed of Au, Ag, Cu, or Al.

[0047] Current sensors 50U, 50V, and 50W are placed on conductors 24U, 24V, and 24W, with an insulator in between.

[0048] In the power module 100 configured in this way, in a plan view, the current sensors 50U, 50V, and 50W are positioned in the first direction between the U-phase terminal 30U, V-phase terminal 30V, W-phase terminal 30W and the power semiconductors 14U, 14V, and 14W.

[0049] The current sensors 50U, 50V, and 50W are arranged such that, in a plan view, at least a portion of them overlap with, or are surrounded by, the conductors 24U, 24V, and 24W that extend in the first direction and are electrically connected to the power semiconductors 14U, 14V, and 14W. This allows the current sensors 50U, 50V, and 50W to accurately detect the magnitude of the magnetic field generated by the current flowing through the conductors 24U, 24V, and 24W. If the current sensors 50U, 50V, and 50W have a vertical magnetic field detection element such as a Hall element as a magnetoelectric conversion element, the current sensors 50U, 50V, and 50W may be arranged such that, in a plan view, at least a portion of them are surrounded by the conductors 24U, 24V, and 24W. If the current sensors 50U, 50V, and 50W have a transverse magnetic field detection element such as a magnetoresistive element as a magnetoelectric conversion element, the current sensors 50U, 50V, and 50W may be arranged such that, in a plan view, at least a portion of them overlap with the conductors 24U, 24V, and 24W. The magnetic sensing surfaces of the current sensors 50U, 50V, and 50W may be arranged such that, in a plan view, at least a portion of them overlap with the conductors 24U, 24V, and 24W.

[0050] By positioning the current sensors 50U, 50V, and 50W between the U-phase terminal 30U, V-phase terminal 30V, W-phase terminal 30W, and power semiconductors 14U, 14V, and 14W, the current sensors 50U, 50V, and 50W can detect the current flowing near the U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W. Furthermore, by positioning the current sensors 50U, 50V, and 50W on the paths of the conductors 24U, 24V, and 24W that extend in a first direction and overlap with the power semiconductors 14U, 14V, and 14W in a plan view, the power semiconductors 14U, 14V, and 14W, and the current sensors 50U, 50V, and 50W can be arranged without wasting space. Thus, the power module 100 can be miniaturized.

[0051] The power module 100 further has input / output terminals 73U, 73V, and 73W that are exposed from the sealing portion 80 and electrically connected to the terminals of the current sensors 50U, 50V, and 50W. The input / output terminals 73U, 73V, and 73W extend to the side of the sealing portion 80 opposite to the side on which the insulating substrate 11 is located and may be electrically connected to other substrates located on the side of the sealing portion 80 opposite to the side on which the insulating substrate 11 is located.

[0052] Multiple input / output terminals 73U, 73V, and 73W are exposed on the same side 80b as the U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W. In a plan view, the multiple input / output terminals 73U, 73V, and 73W are positioned so as not to overlap with the U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W.

[0053] The power module 100 further has multiple input / output conductors 70U, 70V, and 70W (sometimes collectively referred to as input / output conductor 70) that electrically connect the input / output terminals 73U, 73V, and 73W to the current sensors 50U, 50V, and 50W. The multiple input / output conductors 70U, 70V, and 70W transmit the signals output from the current sensors 50U, 50V, and 50W. Some of the multiple input / output conductors 70U, 70V, and 70W may be power lines for the current sensors 50U, 50V, and 50W.

[0054] The input / output conductors 70U, 70V, and 70W have, in a plan view, a first portion 71U, 71V, and 71W (sometimes collectively referred to as the first portion 71) that extends in a direction intersecting the first direction and is electrically connected to the current sensor 50, and a second portion 72U, 72V, and 72W (sometimes collectively referred to as the second portion 72) that is connected to the first portion 71U, 71V, and 71W and the input / output terminals 73U, 73V, and 73W. The second portion 72U, 72V, and 72W may be a wiring pattern provided on the insulating substrate 11, and at least a portion of it may be provided along the conductors 24U, 24V, and 24W. The first portion 71U, 71V, and 71W may be wires that electrically connect the terminals of the current sensor 50U, 50V, and 50W to the second portion 72U, 72V, and 72W. Input / output terminals 73U, 73V, and 73W include both input and output terminals. The power module 100 may include at least one pair of input and output terminals exposed from the sealing portion 80, an input conductor having, in a plan view, a portion of a first part 71U, 71V, 71W that extends along the insulating substrate 11 and in a second direction intersecting the first direction and is electrically connected to the current sensors 50U, 50V, 50W, and a portion of the first part 71U, 71V, 71W and a portion of a second part 72U, 72V, 72W that is connected to the input terminal, and an output conductor having, in a plan view, a portion of the first part 71U, 71V, 71W that extends along the insulating substrate 11 and in a second direction intersecting the first direction and is electrically connected to the current sensors 50U, 50V, 50W, and a portion of the second part 72U, 72V, 72W that is connected to the output terminal.

[0055] The first parts 71U, 71V, and 71W do not necessarily have to be in a second direction perpendicular to the first direction in a plan view, as long as they are not in the first direction. Because the input / output conductors 70U, 70V, and 70W have the first parts 71U, 71V, and 71W, the input / output terminals 73U, 73V, and 73W and the U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W can be exposed from the sealing part 80 without overlapping in a plan view. Furthermore, by providing the second parts 72U, 72V, and 72W along the conductors 24U, 24V, and 24W extending in the first direction, space saving can be achieved. Thus, the power module 100 can be miniaturized.

[0056] Furthermore, the structure can be simplified without the structural complexity associated with integrating the current sensor 50 into the power module 100, and the number of parts can be reduced. In addition, even if the distance between the current sensor 50 and the conductor 24 is shortened, the insulating properties can be maintained by the insulating resin constituting the insulator 56 and the sealing part 80. Moreover, by arranging the magnetoelectric conversion element and the signal processing IC in close proximity, the influence of individual temperature distributions within the power module 100 can be reduced, and the accuracy of temperature compensation can be improved.

[0057] Figure 3 is a schematic diagram showing a portion of a cross-sectional view of the power module 100 as seen from the side in the X direction. The current sensor 50 may be placed on the conductor 24 via an insulator 56. The power semiconductor 14 may be placed on the conductor 24 via a conductive adhesive 15. The drain or collector of the power semiconductor 14 is electrically connected to the conductor 24 via the conductive adhesive 15. The power semiconductor 12 may be placed on the conductor 20 via a conductive adhesive 13. As described above, by placing the current sensor 50 between the terminal 30 and the power semiconductor 14 along the current path of the conductor 24, the current sensor 50 can be placed close to the terminal 30.

[0058] Figure 4 is a schematic perspective view showing the current sensor 50, the conductor 24, and the input / output conductor 70. The first portion 71, which is a wire for electrically connecting the current sensor 50 to the input / output conductor 70, extends in a second direction (X-axis direction) different from the first direction (Y-axis direction) along the current path of the conductor 24, and is electrically connected to the second portion 72, which is a wiring pattern located beside the conductor 24. By having the input / output conductor 70 exposed from the same side as the terminal 30 of the sealing portion 80, the space required for arranging the second portion 72 can be reduced.

[0059] In the examples shown in Figures 3 and 4, the conductor 24 is formed as a wiring pattern on the insulating substrate 11. Alternatively, the conductor 24 may be part of a busbar directly connected to the terminal 30.

[0060] Figure 5 is a diagram illustrating a modified example of a cross-sectional view of the power module 100 as seen from the side in the X direction. In the example shown in Figure 3, the conductor 24 is entirely provided as a wiring pattern on the insulating substrate 11. In the modified example, a portion of the conductor 24 is not a wiring pattern provided on the insulating substrate 11. The conductor 24 has a conductor 24a, which is a wiring pattern electrically connected to the drain or collector on the bottom side of the power semiconductor 14 on the insulating substrate 11, and a conductor 24b, which is a metal plate electrically connected to conductor 24a. The source or emitter on the top side of the power semiconductor 14 is electrically connected to conductor 22 via a wire 19, similar to the configuration shown in Figure 2. Conductor 24b is located on the opposite side from the insulating substrate 11 when viewed from the current sensor 50 in a side view, and is physically and electrically connected to conductor 24a on the surface of the insulating substrate 11. The method of connecting conductor 24a and conductor 24b can be, for example, welding. The conductor 24 having conductors 24a and conductor 24b is an example of a first conductor. The drain or collector on the bottom side of the power semiconductor 14 is electrically connected to the conductor 24a via a conductive adhesive 15. The conductor 24b is, for example, part of a busbar directly connected from terminal 30.

[0061] As shown in Figure 5, the measured current measured by the current sensor 50 may flow through the conductor 24b, which is located on the opposite side of the insulating substrate 11 when viewed from the side, rather than on the insulating substrate 11 side.

[0062] As shown in Figure 5, the conductor 24 and the current sensor 50 may be physically separated and insulated by sealing the conductor 24 and the current sensor 50 with an insulating resin.

[0063] Figure 6 is a schematic perspective view showing the current sensor 50, conductor 24b, and input / output conductor 70 in a modified example shown in Figure 5. In the embodiment shown in Figure 4, the connection terminals of the current sensor 50 are located on the side opposite to the insulating substrate 11. In contrast, in the modified example, the current sensor 50 is located on the insulating substrate 11 side, and the current sensor 50 is electrically connected to a first portion 71 arranged as a wiring pattern on the insulating substrate 11. Both the first portion 71 and the second portion 72 of the input / output conductor 70 are arranged as wiring patterns on the insulating substrate 11. Even when the first portion 71 is arranged as a wiring pattern on the insulating substrate 11, the first portion 71 extends in a second direction intersecting the first direction in a plan view, and is electrically connected to the current sensor 50. Because the first portion 71 on the insulating substrate 11 extends in the second direction and the second portion 72 extends in the first direction, the input / output terminals electrically connected to the input / output conductor 70 and the terminal 30 can be exposed from the sealing portion 80 without overlapping in a plan view. By providing the second section 72 along the conductor 24 extending in the first direction, space saving can be achieved. Therefore, the power module 100 can be made smaller.

[0064] In the example above, in a plan view, the current sensor 50 is positioned to overlap with the conductor 24, and the portion of the conductor 24 extending in the first direction is straight. However, the shape of the conductor 24 may be other shapes.

[0065] Figures 7A to 7D show the shape of the conductor 24 according to a modified example. Figures 7A to 7D show an example of a current sensor 50 equipped with two magnetoelectric conversion elements 52, which are Hall elements, an example of a longitudinal magnetic field detection element. However, the current sensor 50 may be equipped with one Hall element, or with one or more transverse magnetic field detection elements such as magnetoresistive elements.

[0066] As shown in Figure 7A, the conductor 24 has an opening 241 in a plan view, facing the current sensor 50, and the current sensor 50 is placed within the opening 241. The current sensor 50 may be placed on the insulating substrate 11 without the conductor 24 in between. The two magnetoelectric conversion elements 52 face each other in a direction intersecting the direction of the current flowing through the conductor 24, and the current sensor 50 is positioned in a plan view so as to be surrounded by the conductor 24. In a side view, the current sensor 50 may overlap with the conductor 24 at least partially. Alternatively, the current sensor 50 may not overlap with the conductor 24 in a side view. That is, when viewed from the side, the current sensor 50 may be placed between the insulating substrate 11 and the conductor 24.

[0067] As shown in Figure 7B, the conductor 24 has a portion 242 in plan view that is narrower than the rest of the conductor and narrower than the width of the current sensor 50, and the current sensor 50 may be provided at a position that overlaps with portion 242 in plan view. The current sensor 50 is positioned so that it partially overlaps with the conductor 24 in plan view. When viewed from the side, the current sensor 50 may overlap with the conductor 24 at least partially. Alternatively, the current sensor 50 may not overlap with the conductor 24 in side view. That is, in side view, the current sensor 50 may be positioned between the insulating substrate 11 and the conductor 24.

[0068] As shown in Figures 7C and 7D, the conductor 24 has a notch 243 on either its longitudinal or transverse side, and the current sensor 50 is placed within the notch 243. The current sensor 50 may be placed on the insulating substrate 11 without being connected to the conductor 24. In a plan view, the current sensor 50 is positioned such that a portion of it is surrounded by the conductor 24.

[0069] The current sensor 50 may have a magnetoelectric conversion element 52 that is not sealed in molded resin and is exposed. As shown in Figure 8, the signal processing IC 51 and the magnetoelectric conversion element 52 may each be configured as chips, and the magnetoelectric conversion element 52 may be placed on the chip of the signal processing IC 51. The magnetoelectric conversion element 52 may be placed on the surface of the chip of the signal processing IC 51 on which the terminals are provided. Methods of arrangement include placing the magnetoelectric conversion element 52 as a chip on the chip of the signal processing IC 51, depositing the magnetoelectric conversion element 52 onto the signal processing IC 51, or forming it as a doped layer on the surface of the signal processing IC 51.

[0070] If the signal processing IC 51 and magnetoelectric conversion element 52 are in a semiconductor package sealed with molded resin, the terminal type can be arbitrary, for example, SOP, SON, or QFN.

[0071] Even if the current sensor 50 is configured with terminal types such as SOP, SON, or QFN, the current sensor 50 may be electrically connected to the input / output conductor 70 by a wire rather than by a wiring pattern on the insulating substrate 11. For example, as shown in Figure 9, the side of the current sensor 50 on which the terminal 55 is provided may be located opposite the conductor 24 on the insulating substrate 11, and the second portion 72 of the input / output conductor 70 on the insulating substrate 11 and the terminal 55 of the current sensor 50 may be electrically connected via a wire 71. In the configuration shown in Figure 9, the side of the current sensor 50 on which the terminal 55 is not provided may be located on the conductor 24 via an insulator such as a die attach film.

[0072] Figure 10 is a schematic plan view showing an example of the internal configuration of a power module 100 according to a first modified example of this embodiment.

[0073] In the first modified example, the multiple input / output terminals 73U, 73V, and 73W extend to the side opposite to the side on which the insulating substrate 11 of the sealing portion 80 is located, and are electrically connected to other substrates located on the side opposite to the side on which the insulating substrate 11 of the sealing portion 80 is located, which is the same as the power module 100 shown in Figure 2.

[0074] On the other hand, in the first modified example, the positions in which the multiple input / output terminals 73U, 73V, and 73W are exposed from the sealing portion 80 are different from those of the power module 100 shown in Figure 2. The multiple input / output terminals 73U, 73V, and 73W are, for example, pins.

[0075] Specifically, the sealing portion 80 has a partition portion 74 between conductor 24U and conductor 24V, which separates conductor 24U and conductor 24V along the direction in which conductor 24U and conductor 24V extend, and a partition portion 74 between conductor 24V and conductor 24W, which separates conductor 24V and conductor 24W along the direction in which conductor 24V and conductor 24W extend. The partition portion 74 extends from the side wall of the sealing portion 130. The partition portion 74 may extend from the side wall of the sealing portion 80 where side 80b is located toward the side wall of the sealing portion 80 where side 80a is located.

[0076] Some of the multiple input / output terminals 73U are exposed from the partition 74 between conductor 24U and conductor 24V, and other parts of the multiple input / output terminals 73U are exposed from the side wall of the sealing portion 130 where the side surface 80d is located. In a plan view, the positions where some of the multiple input / output terminals 73U and other parts of the multiple input / output terminals 73U are exposed are on the side surface 80b of the sealing portion 80 where the busbar 40U is exposed, rather than on the power semiconductors 12U and 14U.

[0077] Some of the multiple input / output terminals 73V are exposed from the partition 74 between conductor 24U and conductor 24V, and other parts of the multiple input / output terminals 73V are exposed from the partition 74 between conductor 24V and conductor 24W. In a plan view, the positions where some and other parts of the multiple input / output terminals 73V are exposed are on the side 80b of the sealing portion 80 where the busbar 40V is exposed, rather than on the power semiconductors 12V and 14V.

[0078] Some of the multiple input / output terminals 73W are exposed from the partition 74 between conductor 24V and conductor 24W, and other parts of the multiple input / output terminals 73W are exposed from the side wall of the sealing portion 130 where the side surface 80c is located. In a plan view, the positions where some of the multiple input / output terminals 73W and other parts of the multiple input / output terminals 73W are exposed are on the side surface 80b of the sealing portion 80 where the busbar 40W is exposed, rather than on the power semiconductors 12W and 14W.

[0079] Figure 11 is a schematic plan view showing an example of the internal configuration of a power module 100 according to a second modified example of this embodiment.

[0080] In the second modified example, the multiple input / output terminals 73U, 73V, and 73W extend to the side opposite to the side on which the insulating substrate 11 of the sealing portion 80 is located, and are electrically connected to other substrates located on the side opposite to the side on which the insulating substrate 11 of the sealing portion 80 is located, which is the same as the power module 100 shown in Figure 2.

[0081] On the other hand, in the second modified example, the positions in which the multiple input / output terminals 73U, 73V, and 73W are exposed from the sealing portion 130 are different from those of the power module 100 shown in Figure 2. The multiple input / output terminals 73U, 73V, and 73W are, for example, pins.

[0082] Specifically, the sealing portion 80 has a partition portion 74 between conductor 24U and conductor 24V, which separates conductor 24U and conductor 24V along the direction in which conductor 24U and conductor 24V extend, and a partition portion 74 between conductor 24V and conductor 24W, which separates conductor 24V and conductor 24W along the direction in which conductor 24V and conductor 24W extend. The partition portion 74 extends from the side wall of the sealing portion 130. The partition portion 74 may extend from the side wall of the sealing portion 80 where side 80b is located toward the side wall of the sealing portion 80 where side 80a is located.

[0083] Some of the multiple input / output terminals 73U are exposed from the partition 74 between conductor 24U and conductor 24V, and other parts of the multiple input / output terminals 73U are exposed from the side wall of the sealing portion 130 where side 80d is located. Yet another part of the multiple input / output terminals 73U is also exposed from the side wall of the sealing portion 130 where side 80b is located. In a plan view, the locations where some of the multiple input / output terminals 73U and other parts of the multiple input / output terminals 73U are exposed are on the side 80b of the sealing portion 80 where the busbar 40U is exposed, rather than on the power semiconductors 12U and 14U.

[0084] Some of the multiple input / output terminals 73V are exposed from the partition 74 between conductor 24U and conductor 24V, and other parts of the multiple input / output terminals 73V are exposed from the partition 74 between conductor 24V and conductor 24W. Yet another part of the multiple input / output terminals 73V is also exposed from the side wall of the sealing portion 130 where the side 80b is located. In a plan view, the locations where some of the multiple input / output terminals 73V and other parts of the multiple input / output terminals 73V are exposed are on the side 80b of the sealing portion 80 where the busbar 40V is exposed, rather than on the power semiconductors 12V and 14V.

[0085] Some of the multiple input / output terminals 73W are exposed from the partition 74 between conductor 24V and conductor 24W, and other parts of the multiple input / output terminals 73W are exposed from the side wall of the sealing portion 130 where side 80c is located. Yet another part of the multiple input / output terminals 73W is also exposed from the side wall of the sealing portion 130 where side 80b is located. In a plan view, the locations where some of the multiple input / output terminals 73W and other parts of the multiple input / output terminals 73W are exposed are on the side 80b of the sealing portion 80 where the busbar 40W is exposed, rather than on the power semiconductors 12W and 14W.

[0086] As shown in the first and second modified examples above, the position where the multiple input / output terminals 73U, 73V, and 73W are exposed is not limited to the side wall where the side 80b of the sealing portion 80 is located, as long as it is on the side 80b of the sealing portion 80 where the busbars 40U, 40V, and 40W are exposed, rather than on the side 80b of the sealing portion 80 where the power semiconductors 12U, 12V, 12W and 14U, 14V, 14W are exposed.

[0087] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention.

[0088] It should be noted that the execution order of operations, procedures, steps, and stages in the apparatus, systems, programs, and methods shown in the claims, specifications, and drawings is not explicitly stated as "before," "prior to," etc., and that these can be implemented in any order unless the output of a previous process is used in a later process. Even if the operation flow in the claims, specifications, and drawings is described using phrases such as "first," "next," etc. for convenience, it does not mean that it is essential to perform the operations in that order. [Explanation of Symbols]

[0089] 10U U phase circuit 10V V phase circuit 10W W phase circuit 11 Insulating substrate 12U, 12V, 12W Power Semiconductor 14U, 14V, 14W Power Semiconductor 13, 15 Conductive adhesive 17U, 17V, 17W wire 19U, 19V, 19W wire 24U, 24V, 24W Conductor 30U U phase terminal 30V V phase terminal 30W W phase terminal 32, 34 DC terminal 40U, 40V, 40W busbar 50U, 50V, 50W Current Sensor 51 Signal Processing IC 52 Magnetoelectric conversion element 55 terminals 56 Insulator 60 motors 70U, 70V, 70W input / output conductors 73U, 73V, 73W input / output terminal 80 Sealing part 100 Power Modules

Claims

1. Insulating substrate and The first power semiconductor mounted on the insulating substrate, A first conductor that overlaps with the first power semiconductor in a plan view, is electrically connected to the first terminal of the first power semiconductor, and extends in a first direction along the surface of the insulating substrate, A current sensor is positioned in a plan view such that it overlaps with or surrounds the first conductor in at least part, and outputs a signal corresponding to the magnitude of the magnetic field generated by the measured current flowing through the first conductor as a signal indicating the current value of the measured current. A sealing portion that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor in a state insulated between the first conductor and the current sensor, A first external terminal is electrically connected to the first conductor and is exposed from the sealing portion, At least one set of input / output terminals exposed from the sealing portion, In a plan view, it has a first portion that extends along the insulating substrate and in a second direction intersecting the first direction and is electrically connected to the current sensor, and a second portion that is connected to the first portion and at least one of the at least one pair of input / output terminals, and transmits a signal output from the current sensor, Equipped with, In a plan view, the current sensor is positioned between the first external terminal and the first power semiconductor in the first direction. The second part is a power module that does not overlap with the first conductor in a plan view.

2. The first external terminal is exposed on the first side surface of the sealing portion, The at least one set of input / output terminals are located on the first side of the sealing portion, more so than the first power semiconductor, and are exposed from the sealing portion. The power module according to claim 1.

3. The first external terminal and the at least one set of input / output terminals are exposed on the first side of the sealing portion. The power module according to claim 1, wherein at least a portion of the second portion extends along the first direction.

4. The first part is a wire, The second part is a conductive pattern provided on the insulating substrate, The power module according to claim 1, wherein the current sensor is electrically connected to the conductive pattern via the wire.

5. The first and second portions are conductive patterns provided on the insulating substrate, The power module according to claim 1, wherein the current sensor is soldered or flip-chip bonded to the first portion.

6. The power module according to claim 1, wherein the first power semiconductor is arranged on the first conductor.

7. The power module according to claim 1, wherein the first conductor is provided on the insulating substrate.

8. The power module according to claim 1, further comprising an insulating layer between the current sensor and the first conductor.

9. The power module according to claim 8, wherein the insulating layer is an adhesive for bonding the current sensor and the first conductor.

10. The power module according to claim 8, wherein the insulating layer is an insulating resin constituting the sealing portion.

11. The power module according to claim 1, wherein the current sensor comprises at least one magnetoelectric conversion element and a signal processing IC that processes a signal output from the at least one magnetoelectric conversion element.

12. The power module according to claim 11, wherein the current sensor is a coreless current sensor.

13. The power module according to claim 11, wherein the current sensor is a semiconductor package in which the at least one magnetoelectric conversion element and the signal processing IC are sealed in molded resin.

14. The power module according to claim 11, wherein the at least one magnetoelectric conversion element is electrically connected to the signal processing IC by wire bonding.

15. The current sensor has two magnetoelectric conversion elements of the longitudinal magnetic field detection type, The power module according to claim 13, wherein the two magnetoelectric conversion elements are arranged along the insulating substrate and facing each other in a second direction intersecting the first direction, and the current sensor is arranged in a plan view such that at least a portion of it overlaps with or at least a portion of it surrounds the first conductor.

16. The current sensor has at least one magnetoelectric conversion element of the transverse magnetic field detection type, The power module according to claim 13, wherein the current sensor is arranged such that at least one magnetoelectric conversion element overlaps with the first conductor in a plan view.

17. The first terminal and the first conductor of the first power semiconductor and the second terminal of the second power semiconductor are electrically connected, A second conductor is provided on the insulating substrate and is electrically connected to the second terminal of the first power semiconductor, A third conductor is provided on the insulating substrate, overlapping at least a portion of the second power semiconductor in a plan view, and electrically connected to the first terminal of the second power semiconductor. A second external terminal exposed from the sealing portion and electrically connected to the second conductor, A third external terminal exposed from the sealing portion and electrically connected to the third conductor, The power module according to claim 1, further comprising the following:

18. Multiple first power semiconductors, Multiple of the second power semiconductors, Multiple first conductors, Multiple current sensors and The power module according to claim 17, comprising:

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