Composition for encapsulating electronic devices, method for forming an electronic device encapsulation film, and electronic device encapsulation film

Abstract

An electronic device sealing composition according to the present invention contains photosetting monomers (A) and a photopolymerization initiator (B). Said electronic device sealing composition contains, as the photosetting monomers (A), at least a chain-like (meta)acrylate monomer (A1) and a chain-like (meta)acrylate monomer (A2). The chain-like (meta)acrylate monomer (A1) has an alkylene skeleton or an alkylene oxide skeleton. The chain-like (meta)acrylate monomer (A2) includes at least one cyclic group selected from one phenyl group or phenylene group, a heterocyclic group, and a cycloalkyl group.

Description

[Technical Field]

[0001] The present invention relates to a composition for encapsulating electronic devices, a method for forming an electronic device encapsulation film, and an electronic device encapsulation film. In particular, it aims to provide a composition for encapsulating electronic devices that exhibits excellent inkjet ejection over time, excellent encapsulation performance, bending resistance, and adhesion, and as a result, makes it possible to obtain an electronic device with excellent luminescence efficiency. [Background technology]

[0002] For electronic devices, particularly organic electroluminescent devices (hereinafter also referred to as "organic EL devices" or "organic EL elements"), it has been proposed to cover the surface of the organic EL element with a sealing layer to prevent the organic materials and electrodes used from degrading due to moisture.

[0003] As a technology for encapsulating organic EL elements, for example, the technology described in Patent Document 1 discloses a display device in which an organic protective film (encapsulation layer) is formed on the surface of an organic EL element by methods such as vapor deposition or inkjet printing, using a composition that includes monomers without aromatic hydrocarbon groups and monomers having aromatic hydrocarbon groups, wherein the monomer having aromatic hydrocarbon groups contains two or more phenyl groups and heteroatoms, as well as mono(meth)acrylate and di(meth)acrylate. However, in the display device described in Patent Document 1, (i) because the diffusion coefficient of the organic protective film is sufficiently low, moisture permeation is a problem under harsh conditions of high temperature and high humidity such as 85°C, 85%RH, and 100 hours or more, resulting in poor sealing performance and affecting the decrease in luminous efficiency. Furthermore, (ii) because the composition contains monomers having two or more phenyl groups, the resulting organic protective film tends to harden, and bending resistance during bending is a problem. In addition, (iii) because it contains monomers having two or more phenyl groups, there is a problem with continuous inkjet ejection (open time) due to the high surface tension of the liquid. Furthermore, (iv) because the monomer has two or more phenyl groups, it is prone to interaction with polymerization initiators via π electrons, resulting in problems with ejection performance over time.

[0004] Furthermore, the technology described in Patent Document 2 discloses a sealing layer that is a cured product with excellent curability, visible light transmittance, curing shrinkage rate, and water vapor permeability, obtained by combining an alicyclic (meth)acrylate monomer (A) with an alicyclic (meth)acrylate monomer different from compound (A), and the technology described in Patent Document 3 discloses a sealing layer that is a cured product with excellent curability, visible light transmittance, curing shrinkage rate, and water vapor permeability, obtained by combining an alicyclic (meth)acrylate monomer (A) with an aromatic (meth)acrylate monomer. However, the cured product described in Patent Document 2 had problems with bending resistance due to the influence of multiple alicyclic monomers, and the cured product described in Patent Document 3 had problems with bending resistance due to the influence of a combination of alicyclic monomers and aromatic monomers, both resulting from high film hardness.

[0005] As described above, from the viewpoint of high productivity, the sealing layer is preferably formed by an inkjet method. Furthermore, from the viewpoint of further improving productivity, it is required that even when using aged ink compositions used in the inkjet method, the inkjet ejection properties (the ejection properties of ink in the formation of the sealing layer by the inkjet method) are excellent, and that high sealing performance, bending resistance, and adhesion are maintained. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Special Publication No. 2018-504735 [Patent Document 2] Japanese Patent Publication No. 2014-196387 [Patent Document 3] Japanese Patent Publication No. 2014-193970 [Overview of the project] [Problems that the invention aims to solve]

[0007] The present invention has been made in view of the above-mentioned problems and circumstances, and its objective is to provide an electronic device encapsulation composition, an electronic device encapsulation film formation method, and an electronic device encapsulation film that have excellent inkjet ejection properties over time, excellent sealing performance, bending resistance and adhesion, and as a result, enable the creation of an electronic device with excellent luminescence efficiency. [Means for solving the problem]

[0008] In order to solve the above problems, the inventors of the present invention, in the process of investigating the causes of the above problems, discovered that by combining (meth)acrylate monomers having a specific structure, it is possible to provide an electronic device encapsulation composition that exhibits excellent inkjet ejection performance over time, as well as good sealing performance, bending resistance, and adhesion, leading to the present invention. In other words, the above-mentioned problems according to the present invention are solved by the following means.

[0009] 1. A composition for encapsulating electronic devices, comprising a photocurable monomer (A) and a photopolymerization initiator (B), The photocurable monomer (A) contains at least a linear (meth)acrylate monomer (A1) and a linear (meth)acrylate monomer (A2), The chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an alkylene oxide skeleton, The chain-like (meth)acrylate monomer (A2) contains at least one cyclic group selected from a phenyl group or phenylene group, a heterocyclic group, and a cycloalkyl group. fruit, The content of the linear (meth)acrylate monomer (A1) relative to the entire sealing composition is in the range of 70 to 95% by mass, and the content of the linear (meth)acrylate monomer (A2) relative to the entire sealing composition is in the range of 5 to 30% by mass. Composition for encapsulating electronic devices.

[0010] 2. The electronic device encapsulation composition according to item 1, wherein the chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an ethylene oxide skeleton.

[0011] 3. The chain (meth)acrylate monomer (A1) is a first one selected from ethylene glycol di(meth)acrylate having a structure represented by the following general formula (1) or di(meth)acrylate having 6 to 10 carbon atoms in the alkylene skeleton. In the section The composition for sealing an electronic device according to the description.

Chemical formula

[0012] 4. When the total mass of the contained monomers is 100, the total number of oxygen atoms per mass ratio of the chain (meth)acrylate monomer (A1) and the chain (meth)acrylate monomer (A2) is 4.5 or more. In the section The composition for sealing an electronic device according to the description.

[0013] 5. A method for forming a sealing film using the composition for sealing an electronic device according to any one of Items 1 to 4, A step of forming a first sealing layer on an electronic device by a vapor phase method, A step of forming a second sealing layer by applying the composition for sealing an electronic device on the first sealing layer. The method for forming a sealing film for an electronic device includes these steps.

[0014] 6. The method for forming a sealing film for an electronic device according to Item 5, which includes a step of forming a third sealing layer on the second sealing layer by a vapor phase method.

[0015] 7. The method for forming a sealing film for an electronic device according to Item 5, wherein the step of forming the second sealing layer uses an inkjet method. In the section The method for forming a sealing film for an electronic device according to the description.

[0016] 8. A sealing film for an electronic device that seals an electronic device, A first sealing layer containing silicon nitride, silicon oxide or silicon oxynitride, A second sealing layer using the composition for sealing an electronic device according to any one of Items 1 to 4. The sealing film for an electronic device has these layers.

[0017] 9. The electronic device encapsulation film according to item 8, further comprising a third encapsulation layer containing silicon nitride, silicon oxide, or silicon oxynitride on the second encapsulation layer. [Effects of the Invention]

[0018] The present invention provides an electronic device encapsulation composition, an electronic device encapsulation film formation method, and an electronic device encapsulation film that exhibit excellent inkjet ejection properties over time, excellent sealing performance, flexibility resistance, and adhesion, and excellent luminescence efficiency. Although the mechanism of action or mechanism of the present invention is not yet clear, it is speculated as follows.

[0019] (Inkjet ejection performance over time) By using the aforementioned chain-like (meth)acrylate monomer (A1) and chain-like (meth)acrylate monomer (A2) in combination, the surface tension is adjusted to the optimal range for inkjet ejection, making it possible to design the electronic device encapsulation composition to have continuous ejection over time and a wide open time (the time between ejections).

[0020] (Sealing performance) By using the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) in combination, the dispersibility of the additives contained in the electronic device encapsulation composition is improved. As a result, the curing of the encapsulation layer formed using the composition becomes more uniform, and the moisture barrier properties of the entire encapsulation layer are improved. Furthermore, the chain-like (meth)acrylate monomers (A1) and (A2) form a three-dimensional network structure, which reduces the gaps in the entire sealing layer and improves moisture barrier properties (sealing performance).

[0021] (flexure resistance) Because the chain-like (meth)acrylate monomers (A1) and (A2) have appropriate flexibility, the sealing layer containing the monomers (A1) and (A2) can be given bending resistance.

[0022] (Adhesion) For example, plasma-enhanced chemical vapor deposition (PECVD). When a sealing film made of the sealing composition of the present invention is formed on a first sealing layer containing silicon nitride formed by the plasma-excited chemical vapor deposition (PECVD) method, it is considered that some reactive groups in chemical states such as NH, OH, or Si-H are present on the surface of the first sealing layer formed by the PECVD method, and reactive groups such as acryloyl groups, methacryloyl groups, or alkylene oxide groups (also called "oxyalkylene groups") are present on the surface of the sealing film. From this, it is inferred that hydrogen bonds are formed at the interface between the first sealing layer and the sealing film due to the interaction of the reactive groups, for example, hydrogen bonds such as NH---O=C (carbonyl group in the acryloyl group) or NH---OR (alkylene oxide group) are formed, resulting in close contact and improved adhesion of the sealing film. Furthermore, from the viewpoint of ease of hydrogen bonding, when the total mass of monomers contained in the sealing composition is set to 100, the total number of oxygen atoms per mass ratio of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) is preferably 3 or more, and particularly preferably 4.5 or more. [Modes for carrying out the invention]

[0023] The present invention relates to an electronic device encapsulation composition comprising a photocurable monomer (A) and a photopolymerization initiator (B), wherein the photocurable monomer (A) comprises at least a linear (meth)acrylate monomer (A1) and a linear (meth)acrylate monomer (A2), wherein the linear (meth)acrylate monomer (A1) has an alkylene skeleton or an alkylene oxide skeleton, and the linear (meth)acrylate monomer (A2) contains at least one cyclic group selected from a phenyl group or phenylene group, a heterocyclic group, and a cycloalkyl group. This feature is a technical feature common to or corresponding to each of the embodiments described below.

[0024] In embodiments of the present invention, it is preferable that the chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an ethylene oxide skeleton, in terms of inkjet ejectability and bending resistance.

[0025] Furthermore, it is preferable that the chain-like (meth)acrylate monomer (A1) is selected from ethylene glycol di(meth)acrylate having the structure represented by the general formula (1) or from di(meth)acrylate having 6 to 10 carbon atoms in the alkylene skeleton, in terms of inkjet ejectability over time and bending resistance.

[0026] Furthermore, when the total mass of the contained monomers is set to 100, it is preferable that the sum of the number of oxygen atoms per mass ratio of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) is 4.5 or more, as this improves the adhesion of the sealing film.

[0027] The present invention relates to a method for forming an electronic device encapsulation film, comprising the steps of: forming a first encapsulation layer on an electronic device by a vapor phase method; and forming a second encapsulation layer by applying the electronic device encapsulation composition onto the first encapsulation layer. This makes it possible to provide a method for forming an electronic device encapsulation film that offers excellent inkjet ejection performance over time, superior sealing performance, flexibility resistance, and adhesion, as well as excellent luminescence efficiency.

[0028] Furthermore, it is preferable to include a step of forming a third sealing layer on the second sealing layer by a vapor phase method, as this provides superior sealing performance.

[0029] Furthermore, using an inkjet method for the step of forming the second sealing layer is preferable because it allows for high-precision layer formation.

[0030] The electronic device encapsulation film of the present invention is an electronic device encapsulation film for encapsulating an electronic device, comprising: a first encapsulation layer containing silicon nitride, silicon oxide, or silicon oxynitride; and a second encapsulation layer using the electronic device encapsulation composition. This makes it possible to provide an electronic device encapsulation film that exhibits excellent inkjet ejection performance over time, superior sealing performance, flexibility resistance, and adhesion, and excellent luminescence efficiency for obtaining electronic devices.

[0031] Furthermore, having a third sealing layer containing silicon nitride, silicon oxide, or silicon oxynitride on the second sealing layer is preferable in terms of superior sealing performance.

[0032] The present invention, its components, and embodiments for carrying out the present invention will be described below. In this application, "~" is used to mean that the numerical values ​​written before and after it are included as the lower limit and upper limit.

[0033] [Composition for encapsulating electronic devices] The electronic device encapsulation composition of the present invention (hereinafter also simply referred to as "encapsulation composition") is an electronic device encapsulation composition containing a photocurable monomer (A) and a photopolymerization initiator (B), wherein the photocurable monomer (A) contains at least a linear (meth)acrylate monomer (A1) and a linear (meth)acrylate monomer (A2), wherein the linear (meth)acrylate monomer (A1) has an alkylene skeleton or an alkylene oxide skeleton, and the linear (meth)acrylate monomer (A2) contains at least one cyclic group selected from a phenyl group or phenylene group, a heterocyclic group and a cycloalkyl group.

[0034] In this specification, "(meth)acrylate" means at least one of acrylate and methacrylate. Furthermore, in this invention, "electronic device" refers to an element that generates, amplifies, converts, or controls electrical signals by utilizing the kinetic energy, potential energy, etc., of electrons. Examples of active elements include light-emitting diodes, organic electroluminescent elements, photoelectric converters, and transistors. In addition, in this invention, passive elements that perform passive work such as "resisting" or "storing" in response to external influences, such as resistors and capacitors, are also included as electronic devices. Therefore, the sealing composition of the present invention is used to form a sealing film for sealing the aforementioned electronic device.

[0035] <Photocurable monomer (A)> The aforementioned photocurable monomer (A) refers to a photocurable monomer that can undergo a curing reaction with a photopolymerization initiator. The photocurable monomer may be a non-silicon monomer that does not contain silicon (Si), and may be, for example, a monomer consisting only of elements selected from C, H, O, N, or S, but is not limited thereto. The photocurable monomer may be synthesized by conventional synthesis methods or purchased as a commercially available product. The photocurable monomer (A) contains at least a linear (meth)acrylate monomer (A1) and a linear (meth)acrylate monomer (A2).

[0036] (Chain-like (meth)acrylate monomer (A1)) In the present invention, "chain-like (meth)acrylate monomer (A1)" refers to a monomer that, when considering the longest continuous chain of carbon atoms within the molecule, includes a linear structure and a branched structure in which two or more carbon atoms are linked in a line. It is also called a chain-like (or acyclic) monomer and does not include a cyclic structure. The chain-like framework may contain atoms selected from O, N, or S. For example, the chain-like framework may contain ether bonds, sulfide bonds, etc. The chain-like (meth)acrylate monomer (A1) according to the present invention has an alkylene skeleton or an alkylene oxide skeleton. In particular, it is preferable that the chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an ethylene oxide skeleton in terms of inkjet ejectability and bending resistance. In this invention, "alkylene oxide skeleton" refers to the structure (skeleton) of a divalent linking group (also called an "alkylene oxy group") in which an oxygen atom (-O-) is bonded to one end of an alkylene group. For example, the "ethylene oxide skeleton," which is an example of an "alkylene oxide skeleton," is a unit consisting of two carbon chains and one oxygen atom, and may have the structure of a monovalent ethylene oxide group (also called an "epoxy ring group"), or the epoxy ring group may open to form a divalent linking group (also called an "ethylene oxy group") (skeleton). The chain-like (meth)acrylate monomer (A1) specifically includes mono(meth)acrylates, di(meth)acrylates, tri(meth)acrylates, and tetra(meth)acrylates having substituted or unsubstituted C2-C20 alkylene groups, ethylene oxide groups, etc. In particular, it is preferable to select from ethylene glycol di(meth)acrylate having a structure represented by the following general formula (1) or di(meth)acrylate having 6 to 10 carbon atoms in the alkylene skeleton, in terms of inkjet ejectability over time and bending resistance. Of the ethylene glycol di(meth)acrylates having the structure represented by the following general formula (1), triethylene glycol di(meth)acrylate is particularly preferred.

[0037] [ka]

[0038] More specifically, the chain-like (meth)acrylate monomer (A1) includes unsaturated carboxylic acid esters, including (meth)acrylic acid esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, nonyl (meth)acrylate, decanyl (meth)acrylate, undecanyl (meth)acrylate, and dodecyl (meth)acrylate; unsaturated carboxylic acid aminoalkyl esters such as 2-aminoethyl (meth)acrylate and 2-dimethylaminoethyl (meth)acrylate; saturated or unsaturated carboxylic acid vinyl esters such as vinyl acetate; vinyl cyanide compounds such as (meth)acrylonitrile; and unsaturated amide compounds such as (meth)acrylamide.Ethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, pentaethylene glycol di(meth)acrylate, hexaethylene glycol di(meth)acrylate, polytetraethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,10-decanediol diacrylate, 1,12-dodecanediol dimethacrylate, octanediol di(meth)acrylate, nonanediol di(meth)acrylate, decanediol di(meth)acrylate, undecanediol di(meth)acrylate, dodecanediol di(meth)acrylate This may include, but is not limited to, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol di(meth)acrylate, dipentaerythritol tri(meth)acrylate, dipentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, hexyl di(meth)acrylate, decyl di(meth)acrylate, dodecyl dimethacrylate, ethoxylated glycerin tri(meth)acrylate, stearyl(meth)acrylate, 2-hydroxy-1,3-dimethacryloxypropane, polyethylene glycol #600 di(meth)acrylate, or mixtures thereof. In addition to the (meth)acrylate monomers mentioned above, epoxy (meth)acrylates can also be cited.

[0039] The content of the chain-like (meth)acrylate monomer (A1) in relation to the entire encapsulating composition is preferably in the range of 50 to 95% by mass, and more preferably in the range of 70 to 95% by mass.

[0040] (Chain-like (meth)acrylate monomer (A2)) In the present invention, "chain-like (meth)acrylate monomer (A2)" refers to a monomer that, when considering the longest continuous chain of carbon atoms within the molecule, includes a linear structure and a branched structure in which two or more carbon atoms are linked in a line, and includes at least one cyclic group selected from a phenyl group or phenylene group, a heterocyclic group, and a cycloalkyl group in part of the linear structure or branched structure. Furthermore, if a phenyl group or phenylene group is present, it shall contain one phenyl group or one phenylene group, and shall not include cases where two or more phenyl groups or two or more phenylene groups are present. In addition, if a heterocyclic group or cycloalkyl group is present, it shall contain one or more heterocyclic groups or one or more cycloalkyl groups. Furthermore, the chain-like framework may contain atoms selected from O, N, or S. For example, the chain-like framework may contain ether bonds, sulfide bonds, etc. Furthermore, the heterocyclic group may be an aromatic heterocyclic group or a non-aromatic heterocyclic group (for example, one having a heteroatom within a cycloalkyl skeleton).

[0041] Among the chain-like (meth)acrylate monomers (A2), the (meth)acrylate monomers having a cycloalkyl group include mono(meth)acrylates, di(meth)acrylates, tri(meth)acrylates, and tetra(meth)acrylates having substituted or unsubstituted C3-C20 cycloalkyl groups, and refer to monomers having a cyclopentane skeleton, cyclohexane skeleton, cycloheptane skeleton, dicyclodecane structure, tricyclodecane ring, adamantane ring, or isobornyl ring as their skeleton. Preferably, the cycloalkyl group contains a dicyclodecane group or a tricyclodecane group, which is preferable in terms of sealing performance. Specifically, examples include alicyclic (meth)acrylates such as isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyl (meth)acrylate, and cyclohexyl (meth)acrylate; 1,3-adamantanediol di(meth)acrylate, 1,3-adamantanedimethanol di(meth)acrylate, 2-methyl-2-adamantyl (meth)acrylate, 2-ethyl-2-adamantyl (meth)acrylate, 3-hydroxy-1-adamantyl (meth)acrylate, and 1-adamantyl (meth)acrylate. Polyfunctional (meth)acrylate compounds with two or more functions may include, but are not limited to, alicyclic (meth)acrylates such as tricyclodecanedimethanol (meth)acrylate or mixtures thereof.

[0042] Furthermore, among the chain-like (meth)acrylate monomers (A2), a (meth)acrylate monomer having a heterocyclic group refers to a monomer having a heterocyclic (heterocyclic) backbone. Examples of heterocyclic (heterocyclic) skeletons that can be specifically used include dioxane structures, trioxane structures, and isocyanurate structures. Specifically, the heterocyclic (meth)acrylate monomers may include, but are not limited to, dioxane glycol di(meth)acrylate, tetrahydrofurfuryl(meth)acrylate, alkoxylated tetrahydrofurfuryl acrylate, caprolactone-modified tetrahydrofurfuryl(meth)acrylate, morpholine(meth)acrylate, isocyanuric acid EEO-modified diacrylate (M-215), ε-caprolactone-modified tris(acrooxyethyl)isocyanurate (M-327), isocyanuric acid EO-modified di and triacrylates (M-313 or M-315), hydroxypivalaldehyde-modified trimethylolpropane diacrylate (R-604), pentamethylpiperidinyl methacrylate (FA-711), tetramethylpiperidinyl methacrylate (FA-712HM), cyclic trimethylolpropane formal acrylate (SR531), or mixtures thereof.

[0043] Furthermore, the (meth)acrylate monomer having one phenyl group or one phenylene group among the chain-like (meth)acrylate monomers (A2) may include, but is not limited to, benzyl (meth)acrylate, ethoxy-modified cresol (meth)acrylate, propoxy-modified cresol (meth)acrylate, neopentyl glycol benzoate (meth)acrylate, phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, phenoxy-polyethylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-acryloyloxyethyl phthalic acid, neopentyl glycol-acrylic acid-benzoic acid ester, nonylphenol ethylene oxide (meth)acrylate, nonylphenol propylene oxide acrylate, or mixtures thereof.

[0044] Of the chain-like (meth)acrylate monomer (A2), it is preferable in terms of sealing performance and adhesion that the heterocyclic skeleton includes a dioxane glycol group, and one phenyl group comprises a phenoxyethyl group, a phenoxydiethylene glycol group, and a nonylphenol ethylene oxide group.

[0045] The content of the chain-like (meth)acrylate monomer (A2) in relation to the entire encapsulating composition is preferably in the range of 10 to 50% by mass, and more preferably in the range of 5 to 30% by mass.

[0046] Furthermore, it is preferable that at least one of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) has a molecular weight in the range of 100 to 1000, and more preferably in the range of 100 to 500, in terms of inkjet ejectability and moisture permeability.

[0047] Furthermore, in the sealing composition of the present invention, when the total mass of the monomers contained is 100, the sum of the oxygen atoms per mass ratio of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) is preferably 3 or more, and particularly preferably 4.5 or more, in terms of improving the adhesion of the sealing film. The total number of oxygen atoms per mass ratio of each monomer is, for example, 6 × 60 / 100 + 6 × 25 / 100 + 4 × 15 / 100 = 5.7 atoms in the case of a sealing composition having the following composition. • Monomer a1 (triethylene glycol diacrylate (monomer with 6 oxygen atoms)), which is the chain-like (meth)acrylate monomer (A1): 60 parts by mass • Monomer a3 (tripropylene glycol diacrylate (monomer with 6 oxygen atoms)), which is the chain-like (meth)acrylate monomer (A1): 25 parts by mass • Monomer a23 (tricyclodecanedimethylolacrylate), which is the chain-like (meth)acrylate monomer (A2): 15 parts by mass

[0048] <Photopolymerization initiator (B)> The photopolymerization initiator (B) is not particularly limited as long as it is a conventional photopolymerization initiator capable of carrying out a photocurable reaction. The photopolymerization initiator (B) may include, for example, triazine-based, acetophenone-based, benzophenone-based, thioxanthone-based, benzoin-based, phosphorus-based, oxime-based, or mixtures thereof.

[0049] Triazine initiators: 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine , 2-biphenyl-4,6-bis(trichloromethyl)-s-triazine, bis(trichloromethyl)-6-styryl-s-triazine, 2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2,4-trichloromethyl(piperonyl)-6-triazine, 2,4-(trichloromethyl(4'-methoxystyryl)-6-triazine, or mixtures thereof.

[0050] The acetophenone-based initiators may be 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone, 4-chloroacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, or mixtures thereof.

[0051] The benzophenone initiator may be benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, acrylic benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, or a mixture thereof.

[0052] The thioxanthone initiator may be thioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2-chlorothioxanthone, or a mixture thereof.

[0053] The benzoin-based initiator may be benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyldimethyl ketal, or a mixture thereof.

[0054] The phosphorus-based initiator may be bisbenzoylphenylphosphine oxide, benzoyl diphenylphosphine oxide, or a mixture thereof.

[0055] The oxime may be 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione and 1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethanone, or a mixture thereof.

[0056] Preferably, the photopolymerization initiator (B) is contained in the encapsulating composition of the present invention in an amount of about 0.1 to 20 parts by mass per 100 parts by mass of the total of the photocurable monomer (A) (chain (meth)acrylate monomers (A1) and (A2)) and the photopolymerization initiator (B). By keeping the amount within this range, sufficient photopolymerization can occur during exposure, and a decrease in transmittance due to remaining unreacted initiator after photopolymerization can be prevented. Specifically, the photopolymerization initiator (B) is preferably contained in an amount of 0.5 to 10 parts by mass, more specifically 1 to 5 parts by mass. Furthermore, the photopolymerization initiator (B) is preferably contained in the encapsulating composition of the present invention in an amount of 0.1 to 10% by mass, based on the solid content, and more preferably in an amount of 0.1 to 5% by mass. By keeping it within this range, sufficient photopolymerization can occur, and a decrease in transmittance due to remaining unreacted initiator can be prevented.

[0057] Alternatively, instead of the aforementioned photopolymerization initiator, photoacid generators or photopolymerization initiators such as carbazole-based, diketone-based, sulfonium-based, iodonium-based, diazo-based, and biimidazole-based agents may be used.

[0058] <Other additives> The encapsulation composition of the present invention may further contain other components, including antioxidants, thermal stabilizers, photosensitizers, dispersants, thermal crosslinking agents, and surfactants, to the extent that the effects of the present invention are obtained. These components may be present in the encapsulation composition of the present invention as one or more types.

[0059] The aforementioned antioxidant can improve the thermal stability of the sealing layer. The antioxidant may include one or more selected from the group consisting of phenolic, quinoneic, amineic, and phosphiteic compounds, but is not limited to these. For example, examples of antioxidants include tetrakis[methylene(3,5-di-t-butyl-4-hydroxyhydrocinnamate)]methane and tris(2,4-di-tert-butylphenyl)phosphite.

[0060] The antioxidant is preferably contained in the sealing composition in an amount of 0.01 to 3 parts by mass, and more preferably in an amount of 0.01 to 1 part by mass, based on 100 parts by mass of the total of the photocurable monomer and the photopolymerization initiator. By keeping it within this range, excellent thermal stability can be achieved.

[0061] The aforementioned heat stabilizer is included in the sealing composition and suppresses changes in viscosity of the sealing composition at room temperature; any ordinary heat stabilizer can be used without limitation. For example, sterically hindered phenolic heat stabilizers may be used as heat stabilizers, specifically poly(dicyclopentadiene-co-p-cresol), octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, 2,6-di-tert-butyl-4-methylphenol, 2,2'-methano-bi(4-methyl-6-tert-butyl-phenol), 6,6'-di-tert-butyl-2,2'-thiodi-p-cresol, tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanurate, triethylene glycol-bis(3-tert-butyl-4-hydroxy-5-methylphenyl), 4,4'-thiobis(6-tert-butyl-m-cresol), 3,3'-bis(3,5-di-tert-butyl The product may contain, but is not limited to, one or more of the following: (Tyl-4-hydroxyphenyl)-N,N'-hexamethylene-dipropionamide, pentaerythritol tetrakis(3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, stearyl-3,5-di-tert-butyl-4-hydroxyphenylpropionate, pentaerythritol tetrakis 1,3,5-tris(2,6-di-methyl-3-hydroxy-4-tert-butyl-benzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanurate, and 1,3,5-tris(2-hydroxyethyl)isocyanurate-tris(3,5-di-tert-butylhydroxyphenylpropionate).

[0062] The heat stabilizer is contained in the sealing composition at a concentration of 2000 ppm or less, preferably in the range of 0.01 to 2000 ppm, and more preferably in the range of 100 to 1000 ppm, relative to the total amount of the photocurable monomer and the photopolymerization initiator, based on the solid content. By keeping the concentration within this range, the heat stabilizer can further improve the storage stability and processability of the liquid state of the sealing composition.

[0063] The aforementioned photosensitizer has the function of transferring absorbed light energy to the photopolymerization initiator. Therefore, it is a compound that can provide the original photopolymerization initiator function even if the photopolymerization initiator used does not have absorption corresponding to the light from the light source. Examples of photosensitizers include anthracene derivatives such as 9,10-dibutoxyanthracene; and benzoin derivatives such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin isobutyl ether. Benzophenone derivatives such as benzophenone, o-methyl benzoylbenzoate, 4-phenylbenzophenone, 4-benzoyl-4′-methyl-diphenyl sulfide, 3,3′,4,4′-tetra(t-butylperoxycarbonyl)benzophenone, 2,4,6-trimethylbenzophenone, 4-benzoyl-N,N-dimethyl-N-[2-(1-oxo-2-propenyloxy)ethyl]benzenemethanaminonium bromide, and (4-benzoylbenzyl)trimethylammonium chloride; Examples of compounds include thioxanthone derivatives such as 2-isopropylthioxanthone, 4-isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-dichlorothioxanthone, 1-chloro-4-propoxythioxanthone, and 2-(3-dimethylamino-2-hydroxy)-3,4-dimethyl-9Hthioxanthone-9-one mesochloride. Among these, it is preferable to use anthracene derivatives, benzoin derivatives, benzophenone derivatives, anthraquinone derivatives, and thioxanthone derivatives.

[0064] <UV curing> The sealing composition of the present invention is exposed to ultraviolet light at a rate of 10 to 500 mW / cm². 2 It is preferable to cure by irradiating for 1 to 100 seconds within the specified range, but it is not limited to this. As for ultraviolet light, it is preferable to use a 395nm LED from the viewpoint of preventing degradation of electronic devices.

[0065] <Physical properties> The viscosity of the sealing composition of the present invention is preferably in the range of 3 to 30 mPa·s from the viewpoint of further improving ejection performance from the inkjet head. The surface tension is preferably 15 mN / m or more and less than 45 mN / m from the viewpoint of further improving ejection performance from the inkjet head.

[0066] The viscosity of the sealing composition of the present invention can be determined, for example, by measuring the temperature change of the dynamic viscoelasticity of the sealing composition using various rheometers. In the present invention, these viscosities are values ​​obtained by the following method. The sealing composition of the present invention is set in a stress-controlled rheometer Physica MCR300 (cone plate diameter: 75 mm, cone angle: 1.0°), manufactured by Anton Paar. The sealing composition is then heated to 100°C and cooled to 20°C under the conditions of a cooling rate of 0.1°C / s, a strain of 5%, and an angular frequency of 10 radians / s to obtain a temperature dependence curve of dynamic viscoelasticity.

[0067] The sealing composition of the present invention may contain pigment particles. From the viewpoint of further improving ejection from the inkjet head, it is preferable that the average particle size of the pigment particles in the sealing composition of the present invention, when containing pigment, is in the range of 0.08 to 0.5 μm, and the maximum particle size is in the range of 0.3 to 10 μm. In this invention, the average particle size of the pigment particles refers to the value obtained by dynamic light scattering using a Datasizer Nano ZSP, manufactured by Malvern. Note that the sealing composition containing the coloring agent is highly concentrated and does not transmit light through this measuring instrument; therefore, the sealing composition is diluted 200 times before measurement. The measurement temperature is room temperature (25°C).

[0068] Furthermore, the sealing composition of the present invention is preferably such that the Ohnesolge number (Oh) shown in the following formula 1, where the density ρ, the surface tension σ of the sealing composition, the viscosity μ of the sealing composition, and the nozzle diameter D0 is in the range of 0.1 to 1, from the viewpoint of inkjet ejection performance and droplet stabilization during ink flight.

[0069]

number

[0070] It is preferable to prepare the sealing composition of the present invention and provide a cured polymer having a Tg (glass transition temperature) of 80°C or higher in the film after polymerization. The Tg of the film after polymerization is preferably 80°C or higher from the viewpoint of ensuring stability in the formation process of electronic devices, driving temperature, and reliability testing.

[0071] [Method for forming an electronic device encapsulation film] The present invention provides a method for forming an electronic device encapsulation film using the electronic device encapsulation composition of the present invention described above, comprising the steps of: forming a first encapsulation layer on an electronic device by a vapor phase method; and forming a second encapsulation layer by applying the electronic device encapsulation composition onto the first encapsulation layer. Furthermore, it is preferable to include a step of forming a third sealing layer on the second sealing layer by a vapor phase method, as this can further improve the sealing performance of the electronic device.

[0072] <First sealing layer formation process> The first sealing layer formation step involves forming a first sealing layer on the electronic device by a vapor phase method. Examples of vapor phase methods include sputtering (including reactive sputtering methods such as magnetron cathode sputtering, planar magnetron sputtering, two-electrode AC planar magnetron sputtering, and two-electrode AC rotary magnetron sputtering), evaporation (e.g., resistance heating evaporation, electron beam evaporation, ion beam evaporation, plasma-assisted evaporation), thermal CVD, catalytic chemical vapor deposition (Cat-CVD), capacitively coupled plasma CVD (CCP-CVD), photo-CVD, plasma CVD (PECVD), epitaxial growth, and atomic layer deposition (ALD). Among these, ALD and CVD are preferred. The first sealing layer contains silicon nitride (SiNx), silicon oxynitride (SiNOx), or silicon oxide (SiOx). A specific example of forming the first sealing layer is a method in which the chamber is depressurized, and silane (SiH4), ammonia (NH3), and hydrogen (H2) are heated and supplied to the chamber as raw material gases to form the layer. The thickness of the first sealing layer is preferably in the range of 10 to 1000 nm, and more preferably in the range of 100 to 500 nm.

[0073] <Second sealing layer formation process> The second sealing layer formation step involves forming the second sealing layer by applying the sealing composition of the present invention described above onto the first sealing layer. Specifically, the process may include a step of applying the sealing composition onto the first sealing layer (coating step), and then modifying the resulting coating film by irradiating it with vacuum ultraviolet light under a nitrogen atmosphere.

[0074] (Coating process) Any suitable method can be used to apply the encapsulating composition, such as spin coating, roll coating, flow coating, inkjet coating, spray coating, printing, dip coating, casting, bar coating, and gravure printing. Among these, the inkjet method is preferred because it allows for on-demand fine patterning required when encapsulating electronic devices such as organic EL elements.

[0075] A known inkjet method can be used. Inkjet methods can be broadly divided into two types: drop-on-demand and continuous inkjet, and both can be used. Drop-on-demand methods include electromechanical conversion methods (e.g., single-cavity type, double-cavity type, bender type, piston type, shear-mode type, shear-wall type, etc.), electro-thermal conversion methods (e.g., thermal inkjet type, bubble jet® type, etc.), electrostatic attraction methods (e.g., electric field control type, slit jet type, etc.), and discharge methods (e.g., spark jet type, etc.). From the standpoint of inkjet head cost and productivity, it is preferable to use an electromechanical conversion or electro-thermal conversion head. Note that the method of dropping liquid droplets (e.g., coating liquid) using an inkjet method is sometimes called the "inkjet method."

[0076] When applying the aforementioned sealing composition, it is preferable to do so under a nitrogen atmosphere.

[0077] (Modification process) The modification process may include a step of modifying the obtained coating film by irradiating it with vacuum ultraviolet light under a nitrogen atmosphere after the coating process. The modification process refers to the conversion reaction of polysilazane to silicon oxide or silicon oxynitride. Similarly, the modification process is carried out under a nitrogen atmosphere or reduced pressure, such as in a glove box. The modification treatment in the present invention can be selected from known methods based on the conversion reaction of polysilazane. In the present invention, a conversion reaction using plasma, ozone, or ultraviolet light that can be carried out at low temperatures is preferred. Plasma and ozone can be used by conventionally known methods. In the present invention, it is preferable to form the second sealing layer according to the present invention by applying the above-mentioned coating film and performing a modification treatment by irradiating it with vacuum ultraviolet light (also called VUV) with a wavelength of 200 nm or less.

[0078] The thickness of the second sealing layer is preferably in the range of 0.5 to 20 μm, and more preferably in the range of 3 to 10 μm. The entire second sealing layer may be a modified layer, but the thickness of the modified layer is preferably in the range of 1 to 50 nm, and more preferably in the range of 1 to 30 nm.

[0079] In the process of modifying the coating by irradiating it with vacuum ultraviolet light, the irradiance of the vacuum ultraviolet light on the coating surface of the coating film is 30 to 200 mW / cm². 2 It is preferable that the range be 50 to 160 mW / cm². 2 It is more preferable that the irradiance of vacuum ultraviolet light be within the range of 30 mW / cm². 2 By doing so, the reforming efficiency can be significantly improved, reaching 200 mW / cm². 2 The following method is preferable because it significantly reduces the rate of damage to the coating film and also minimizes damage to the substrate.

[0080] Vacuum ultraviolet irradiation involves an irradiation energy of 1-10 J / cm² on the coated film surface. 2 It is preferable that the temperature be within the range of 3-7 J / cm², from the viewpoint of barrier properties and moisture heat resistance to maintain desiccant function. 2 It is more preferable that it be within the range.

[0081] Furthermore, a rare gas excimer lamp is preferably used as the light source for vacuum ultraviolet light. Since vacuum ultraviolet light is absorbed by oxygen, the efficiency of the vacuum ultraviolet irradiation process tends to decrease, so it is preferable to irradiate with vacuum ultraviolet light under conditions where the oxygen concentration is as low as possible. That is, the oxygen concentration during vacuum ultraviolet light irradiation is preferably in the range of 10 to 10,000 ppm, more preferably in the range of 50 to 5,000 ppm, even more preferably in the range of 80 to 4,500 ppm, and most preferably in the range of 100 to 1,000 ppm.

[0082] The modification treatment can also be carried out in combination with a heat treatment. Preferably, the heating conditions are within the range of 50 to 300°C, more preferably within the range of 60 to 150°C, and preferably for 1 second to 60 minutes, more preferably for 10 seconds to 10 minutes. By using a heat treatment in combination with the modification treatment, the dehydration condensation reaction during modification is promoted, and the modified product can be formed more efficiently.

[0083] Examples of heat treatments include, but are not limited to, methods such as heating the coating film by heat conduction by bringing the substrate into contact with a heating element such as a heat block, heating the atmosphere with an external heater such as a resistance wire, or using infrared light such as an IR heater. In addition, a method that can maintain the smoothness of the coating film containing silicon compounds may be appropriately selected.

[0084] <Third sealing layer formation process> The third sealing layer formation step involves forming the third sealing layer on the second sealing layer by a vapor phase method. Examples of vapor phase methods include sputtering (including reactive sputtering methods such as magnetron cathode sputtering, planar magnetron sputtering, two-pole AC planar magnetron sputtering, and two-pole AC rotary magnetron sputtering), evaporation (for example, resistance heating evaporation, electron beam evaporation, ion beam evaporation, and plasma-assisted evaporation), thermal CVD, catalytic chemical vapor deposition (Cat-CVD), capacitively coupled plasma CVD (CCP-CVD), photo-CVD, plasma CVD (PE-CVD), epitaxial growth, and atomic layer deposition (ALD), among others. In particular, ALD and CVD are preferred for formation. The third sealing layer contains silicon nitride (SiNx), silicon oxynitride (SiNOx), or silicon oxide (SiOx). A specific example of forming the third sealing layer is a method in which the chamber is depressurized, and silane (SiH4), ammonia (NH3), and hydrogen (H2) are heated and supplied to the chamber as raw material gases to form the layer. The thickness of the third sealing layer is preferably in the range of 10 to 1000 nm, and more preferably in the range of 100 to 500 nm.

[0085] Furthermore, as described above, a conductive film for the touch sensor may be formed after the sealing film is formed. The conductive film can be composed of, for example, metal compound films such as ITO (Indium Ti Oxide) and IZO (Indium Zinc Oxide), as well as flexible films such as graphene films, metal nanowire films (e.g., films containing silver nanowires or copper nanowires), and metal nanoparticle films (e.g., films containing silver nanoparticles or copper nanoparticles). It can also be composed of a multilayer film of multiple metals, such as an Al film / Ti film / Al film.

[0086] [Electronic device encapsulation film] The electronic device encapsulation film of the present invention is an electronic device encapsulation film for encapsulating an electronic device, comprising: a first encapsulation layer containing silicon nitride, silicon oxide, or silicon oxynitride; and a second encapsulation layer using the electronic device encapsulation composition of the present invention described above. The electronic device encapsulation film of the present invention is formed by the electronic device encapsulation film formation method described above. That is, a second encapsulation layer is formed using the electronic device encapsulation composition of the present invention described above. Furthermore, it is preferable that the electronic device encapsulation film of the present invention further has a third encapsulation layer containing silicon nitride, silicon oxide, or silicon oxynitride on the second encapsulation layer.

[0087] <First sealing layer> The first sealing layer is a layer formed on the electronic device by the vapor phase method described above. Specifically, it contains silicon nitride, silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.

[0088] <Second sealing layer> The second sealing layer is provided adjacent to the first sealing layer and is formed by applying the sealing composition onto the first sealing layer. Therefore, the second sealing layer contains a polymer consisting of at least a chain-like (meth)acrylate monomer (A1) and a chain-like (meth)acrylate monomer (A2).

[0089] As a method for detecting that the second sealing layer contains the polymer, various conventionally known analytical methods can be used, such as chromatography, infrared spectroscopy, ultraviolet-visible spectroscopy, nuclear magnetic resonance analysis, X-ray diffraction, and mass spectrometry, X-ray photoelectron spectroscopy, etc.

[0090] The polymer content in the second sealing layer is preferably in the range of 85 to 100% by mass, and more preferably in the range of 90 to 95% by mass.

[0091] <Third sealing layer> The third sealing layer is provided adjacent to the second sealing layer and is formed by the gas-phase method described above. Specifically, it contains silicon nitride, silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride, similar to the first sealing layer.

[0092] [Electronic devices] In the electronic device encapsulation film formation method and electronic device encapsulation film of the present invention, examples of electronic devices to be encapsulated include organic EL elements, LED elements, liquid crystal display elements (LCDs), thin-film transistors, touch panels, electronic paper, and solar cells (PVs). From the viewpoint of obtaining the effects of the present invention more efficiently, organic EL elements, solar cells, or LED elements are preferred, and organic EL elements are particularly preferred.

[0093] <Organic EL element> The organic EL element used as an electronic device according to the present invention may be a bottom-emission type, that is, one that extracts light from the transparent substrate side. Specifically, the bottom emission type is constructed by stacking a transparent electrode that serves as the cathode, a light-emitting functional layer, and a counter electrode that serves as the anode on a transparent substrate in that order. Furthermore, the organic EL element according to the present invention may be of the top-emission type, that is, it may extract light from the transparent electrode side, which is the cathode opposite to the substrate. Specifically, the top-emission type has a configuration in which a counter electrode acting as the anode is provided on the substrate side, and a light-emitting functional layer and a transparent electrode acting as the cathode are sequentially laminated on this surface.

[0094] The following shows a typical example of the configuration of an organic EL element. (i) Anode / Hole injection transport layer / Emitting layer / Electron injection transport layer / Cathode (ii) Anode / Hole injection transport layer / Emitting layer / Hole blocking layer / Electron injection transport layer / Cathode (iii) Anode / Hole Injection Transport Layer / Electron Blocking Layer / Emitting Layer / Hole Blocking Layer / Electron Injection Transport Layer / Cathode (iv) Anode / Hole injection layer / Hole transport layer / Emitting layer / Electron transport layer / Electron injection layer / Cathode (v) Anode / Hole injection layer / Hole transport layer / Emitting layer / Hole blocking layer / Electron transport layer / Electron injection layer / Cathode (vi) Anode / Hole Injection Layer / Hole Transport Layer / Electron Blocking Layer / Emitting Layer / Hole Blocking Layer / Electron Transport Layer / Electron Injection Layer / Cathode Furthermore, the organic EL element may have a non-emissive intermediate layer. The intermediate layer may be a charge generation layer or a multi-photon unit configuration. For an overview of organic EL elements applicable to the present invention, see, for example, Japanese Patent Publication Nos. 2013-157634, 2013-168552, 2013-177361, 2013-187211, 2013-191644, 2013-191804, 2013-225678, 2013-235994, and 2013-243234. Examples of configurations described in Japanese Patent Publication No. 2013-243236, Japanese Patent Publication No. 2013-242366, Japanese Patent Publication No. 2013-243371, Japanese Patent Publication No. 2013-245179, Japanese Patent Publication No. 2014-003249, Japanese Patent Publication No. 2014-003299, Japanese Patent Publication No. 2014-013910, Japanese Patent Publication No. 2014-017493, Japanese Patent Publication No. 2014-017494, etc.

[0095] <Base material> Specifically, the substrate that can be used for the aforementioned organic EL element (hereinafter also referred to as support substrate, base, substrate, support, etc.) is preferably glass or a resin film, and if flexibility is required, a resin film is preferable. Furthermore, the substrate may be transparent or opaque. In the case of a so-called bottom emission type, where light is extracted from the substrate side, it is preferable that the substrate be transparent.

[0096] Preferred resins include thermoplastic resins such as polyester resins, methacrylic resins, methacrylic acid-maleic acid copolymers, polystyrene resins, transparent fluororesins, polyimides, fluorinated polyimide resins, polyamide resins, polyamideimide resins, polyetherimide resins, cellulose acylate resins, polyurethane resins, polyetheretherketone resins, polycarbonate resins, alicyclic polyolefin resins, polyarylate resins, polyethersulfone resins, polysulfone resins, cycloolefin copolymers, fluorene ring-modified polycarbonate resins, alicyclic polycarbonate resins, fluorene ring-modified polyester resins, and acryloyl compounds. These resins can be used individually or in combination of two or more.

[0097] The base material is preferably made of a heat-resistant material. Specifically, a base material is used that has a coefficient of linear expansion of 15 ppm / K or more and 100 ppm / K or less, and a glass transition temperature (Tg) of 100°C or more and 300°C or less. The substrate meets the requirements for use as a laminated film for electronic components and displays. Specifically, when the encapsulation film of the present invention is used in these applications, the substrate may be exposed to processes at temperatures above 150°C. In this case, if the coefficient of linear expansion of the substrate exceeds 100 ppm / K, the substrate dimensions may become unstable when subjected to such high-temperature processes. This can lead to deterioration of the barrier performance due to thermal expansion and contraction, or even failure to withstand the thermal process. Below 15 ppm / K, the film may crack like glass, resulting in a deterioration of its flexibility.

[0098] The Tg and coefficient of thermal expansion of the substrate can be adjusted by additives, etc. More preferred examples of thermoplastic resins that can be used as a base material include, for example, polyethylene terephthalate (PET: 70°C), polyethylene naphthalate (PEN: 120°C), polycarbonate (PC: 140°C), alicyclic polyolefin (e.g., Zeon Corporation's Zeonor® 1600: 160°C), polyarylate (PAr: 210°C), polyethersulfone (PES: 220°C), polysulfone (PSF: 190°C), and cycloolefin copolymer (COC: JP 200 A). Examples include compounds described in Japanese Patent Publication No. 1-150584 (162°C), polyimides (e.g., NeoPrim®, manufactured by Mitsubishi Gas Chemical Company, Inc.: 260°C), fluorene ring-modified polycarbonates (BCF-PC: compound described in Japanese Patent Publication No. 2000-227603: 225°C), alicyclic-modified polycarbonates (IP-PC: compound described in Japanese Patent Publication No. 2000-227603: 205°C), acryloyl compounds (compound described in Japanese Patent Publication No. 2002-80616: 300°C or higher), etc. (temperatures in parentheses indicate Tg).

[0099] Since the electronic device according to the present invention is an electronic device such as an organic EL element, the substrate is preferably transparent. That is, the light transmittance is usually 80% or more, preferably 85% or more, and more preferably 90% or more. The light transmittance can be calculated by measuring the total light transmittance and scattered light amount using the method described in JIS K7105:1981, i.e., an integrating sphere type light transmittance measuring device, and subtracting the diffuse transmittance from the total light transmittance.

[0100] Furthermore, the substrates mentioned above may be unstretched films or stretched films. These substrates can be manufactured by conventionally known general methods. The methods for manufacturing these substrates may be appropriately adopted from paragraphs "0051" to "0055" of International Publication No. 2013 / 002026.

[0101] The surface of the base material may be subjected to various known treatments for improving adhesion, such as corona discharge treatment, flame treatment, oxidation treatment, or plasma treatment, etc., and the above treatments may be combined as necessary. Further, an easy adhesion treatment may be performed on the base material.

[0102] The base material may be a single layer or a laminated structure of two or more layers. When the base material has a laminated structure of two or more layers, each base material may be of the same type or different types.

[0103] The thickness of the base material according to the present invention (the total thickness in the case of a laminated structure of two or more layers) is preferably 10 to 200 μm, and more preferably 20 to 150 μm.

[0104] Further, in the case of a film base material, it is preferably a film base material with a gas barrier layer.

[0105] For the gas barrier layer for the film base material, an inorganic substance, an organic film, or a hybrid film of both may be formed on the surface of the film base material, and the water vapor permeability (at 25 ± 0.5 °C, relative humidity (90 ± 2)% RH) measured by a method conforming to JIS K 7129-1992 is 0.01 g / m 2 · It is preferably a barrier film with 24 h or less, and further, the oxygen permeability measured by a method conforming to JIS K 7126-1987 is 1 × 10 -3 mL / m 2 · 24 h·atm or less, and the water vapor permeability is 1 × 10 -3 g / m 2 · It is preferably a high gas barrier film with 24 h or less.

[0106] As the material for forming the gas barrier layer, any material having a function of suppressing the intrusion of elements that cause deterioration of elements such as moisture and oxygen may be used. For example, silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, etc., can be used.

[0107] The gas barrier layer is not particularly limited, but in the case of an inorganic gas barrier layer such as silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, or silicon oxycarbide, it is preferable to form the layer by chemical vapor deposition methods such as sputtering (e.g., magnetron cathode sputtering, flat-plate magnetron sputtering, two-pole AC flat-plate magnetron sputtering, two-pole AC rotary magnetron sputtering, etc.), vapor deposition (e.g., resistance heating deposition, electron beam deposition, ion beam deposition, plasma-assisted deposition, etc.), thermal CVD, catalytic chemical vapor deposition (Cat-CVD), capacitively coupled plasma CVD (CCP-CVD), photoCVD, plasma CVD (PE-CVD), epitaxial growth, atomic layer growth (ALD), and reactive sputtering.

[0108] Furthermore, an inorganic gas barrier layer can also be formed by methods such as applying a coating solution containing inorganic precursors such as polysilazane and tetraethyl orthosilicate (TEOS) onto a support, followed by modification treatment such as irradiation with vacuum ultraviolet light to form an inorganic gas barrier layer, or by film metallization technologies such as metal plating on a resin substrate or bonding a metal foil to a resin substrate.

[0109] Furthermore, the inorganic gas barrier layer may also include an organic layer containing an organic polymer. In other words, the inorganic gas barrier layer may be a laminate of an inorganic layer containing an inorganic material and an organic layer.

[0110] The organic layer can be formed, for example, by coating an organic monomer or organic oligomer onto a resin substrate to form a layer, and then polymerizing and, if necessary, crosslinking it using, for example, an electron beam apparatus, a UV light source, a discharge apparatus, or other suitable apparatus. Alternatively, it can also be formed, for example, by flash evaporation and radiation crosslinkable organic monomer or organic oligomer being deposited, followed by the formation of a polymer from the organic monomer or organic oligomer. Coating efficiency can be improved by cooling the resin substrate.

[0111] Methods for applying organic monomers or organic oligomers include, for example, roll coating (e.g., gravure roll coating) and spray coating (e.g., electrostatic spray coating). Examples of laminates of inorganic and organic layers include, for example, the laminates described in International Publication No. 2012 / 003198 and International Publication No. 2011 / 013341.

[0112] In the case of a laminate of an inorganic layer and an organic layer, the thickness of each layer may be the same or different. The thickness of the inorganic layer is preferably in the range of 3 to 1000 nm, more preferably in the range of 10 to 300 nm. The thickness of the organic layer is preferably in the range of 100 nm to 100 μm, more preferably in the range of 1 to 50 μm. [Examples]

[0113] The present invention will be specifically described below with reference to examples, but the present invention is not limited to these. In the following examples, unless otherwise specified, the operations were carried out at room temperature (25°C). Unless otherwise specified, "%" and "parts" mean "mass%" and "parts by mass," respectively.

[0114] [Preparation of sealing compositions 1-16 and 101-111] Monomer (A1), monomer (A2), and other monomers were weighed under a nitrogen environment to the types and parts by mass shown in Tables I and II below. Furthermore, 5 parts by mass of a phosphorus-based initiator (BASF, IRGACURE TPO) as a photopolymerization initiator, 0.5 parts by mass of 2-isopropylthioxanthone (Merck) as a sensitizer, and 0.1 parts by mass of IRGASTAB UV10 (BASF) as a stabilizer were placed in a brown bottle and stirred on a hot plate at 65°C for 3 hours to obtain sealing compositions 1-16 and 101-111.

[0115] <Monomer (A1)> a1: Triethylene glycol diacrylate (SR272, manufactured by Arkema) a2: Triethylene glycol dimethacrylate (SR205, manufactured by Arkema) a3: Tripropylene glycol diacrylate (APG200, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a4: Hexyl diacrylate (AHDN, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a5: Decyl diacrylate (ADODN, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a6: Polytetraethylene glycol diacrylate (A-PTMG-65, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a7: Trimethylolpropane triacrylate (A-TMPT, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a8: Ethoxylated glycerin triacrylate (A-GLY-3E, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a9: Stearyl acrylate (AS, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a10: 2-Hydroxy-1,3-Dimethacryloxypropane (701, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a11: Polyethylene glycol #600 diacrylate (A600, manufactured by Shin Nakamura Chemical Industry Co., Ltd.) a12: Polyethylene glycol #400 diacrylate (A400, manufactured by Shin Nakamura Chemical Industry Co., Ltd.)

[0116] <Monomer (A2)> a21: Nonylphenol EO modified acrylate (M-111, manufactured by Toagosei Co., Ltd.) a22: Phenoxydiethylene glycol diacrylate (AMP-20GY, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a23: Tricyclodecane dimethanol diacrylate (A-DCP, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a24: Dioxane glycol diacrylate (A-DOG, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a25: Isobornyl acrylate (IBA, manufactured by Kyoeisha Chemical Co., Ltd.) a26: Adamantyl methacrylate (ADAMANTATE M-104, manufactured by Idemitsu Kosan Co., Ltd.) a27: Hydroxypivaraldehyde-modified trimethylolpropanediacrylate (R-604, manufactured by Nippon Kayaku Co., Ltd.) a28: Phenoxyethyl acrylate (POA, manufactured by Kyoeisha Chemical Co., Ltd.)

[0117] <Other monomers> a31: Orthophenylphenoxyethyl acrylate (A-LEN10, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) a32: Ethylene oxide 2 molar modified bisphenol A type diacrylate (FA-320A, manufactured by Hitachi Chemical Co., Ltd.)

[0118] [ka]

[0119] [ka]

[0120] [ka]

[0121] [ka]

[0122] [Evaluation of encapsulation compositions] <Inkjet ejection performance over time> Each of the sealing compositions prepared as described above was left to stand in a 60°C constant temperature bath for 1 hour, and then the ejection performance was evaluated when the sealing composition was applied using an inkjet method under a nitrogen environment. The results are shown in Table III below. ◎, ○, and △ below were considered acceptable. ××: Nozzle defect rate is 50% or more of the total number of nozzles. ×: Nozzle defect rate is between 10% and 50% of the total number of nozzles. △: Nozzle defect rate is between 1% and 10% of the total number of nozzles. ○: Nozzle defect rate is between 0.1% and less than 1% of the total number of nozzles. ◎: Nozzle defect rate is less than 0.1% of the total number of nozzles.

[0123] <Adhesion> A 500 nm thick silicon nitride (SiNx, Vickers hardness HV900) film was formed on alkali-free glass by plasma CVD. Each of the sealing compositions prepared above was then applied to the film by inkjet printing after being left to stand in a 60°C constant temperature bath for one week, forming a sealing film which was used as an evaluation sample. The silicon nitride film was formed by reducing the pressure inside the chamber and supplying heated silane (SiH4), ammonia (NH3), and hydrogen (H2) as raw material gases into the chamber. Furthermore, the thickness of the sealing film was determined by adjusting the number of inkjet coatings and the resolution, resulting in the formation of sealing films of the following two different thicknesses. • 1 μm (single application) • 10 μm (applied twice) The evaluation was conducted by making an incision in the sealing film with a cutter and then performing a peel test using tape (3M 600). ◎ and ○ were considered passing grades according to the evaluation criteria below. (Evaluation Criteria) ××: Adhesion force between the sealing film and the silicon nitride film is less than 0.1N. ×: Adhesion force between the sealing film and the silicon nitride film is 0.1N or more and less than 1N. △: Adhesion between the sealing film and the silicon nitride film is 1N or more and less than 2N. ○: Adhesion between the sealing film and the silicon nitride film is 2N or more and less than 3N. ◎: Adhesion between the sealing film and the silicon nitride film is 3N or higher.

[0124] [Fabrication of Organic EL Element 1] (1) Preparation of the substrate A 15 μm polyimide film was prepared as the film substrate. Furthermore, a gas barrier layer for the film substrate (SiO2 film: 250 nm / SiNx film: 50 nm / SiO2 film: 500 nm (upper layer / intermediate layer / lower layer)) was deposited on this polyimide film using plasma CVD.

[0125] (2) Formation of the first electrode An Al film was formed on one side of the aforementioned substrate as a first electrode (metal layer) under the following conditions. The thickness of the formed first electrode was 150 nm. The thickness of the first electrode was measured using a contact-type surface profile analyzer (DECTAK). The Al film was deposited using a vacuum deposition apparatus at a vacuum level of 1 × 10⁻⁶. -4 After reducing the pressure to Pa, the material was formed using a tungsten resistance heating crucible.

[0126] (3) Formation of the organic EL layer First, each of the deposition crucibles in the vacuum deposition apparatus was filled with the materials listed below, which constitute each layer of the organic functional layer, in amounts optimal for device fabrication. The deposition crucibles used were made of molybdenum or tungsten, which are materials used for resistance heating.

[0127] (3-1) Formation of hole injection layer Vacuum degree 1×10 -4 After reducing the pressure to Pa, the deposition crucible containing compound A-1 was heated by applying current, and the compound was deposited onto the first electrode (metal layer side) at a deposition rate of 0.1 nm / second to form a 10 nm thick hole injection layer.

[0128] (3-2) Formation of the hole transport layer Next, the crucible containing compound M-2 was heated by applying an electric current, and the compound was deposited onto the hole injection layer at a deposition rate of 0.1 nm / second to form a hole transport layer with a thickness of 30 nm.

[0129] (3-3) Formation of the light-emitting layer Next, compound BD-1 and compound H-1 were co-deposited at a deposition rate of 0.1 nm / second so that compound BD-1 was present at a concentration of 7% by mass, forming a 15 nm thick light-emitting layer (fluorescent layer) that exhibited blue light emission. Next, compound GD-1, compound RD-1, and compound H-2 were co-deposited at a deposition rate of 0.1 nm / second at concentrations of 20% by mass for compound GD-1 and 0.5% by mass for compound RD-1, forming a 15 nm thick yellow light-emitting layer (phosphorescent layer).

[0130] (3-4) Formation of the electron transport layer Subsequently, a heating boat containing the compound T-1 described below was energized to form an electron transport layer consisting of Alq3 (tris(8-quinolinol)) on the light-emitting layer. The deposition rate was set to within the range of 0.1 to 0.2 nm / second, and the thickness was set to 30 nm.

[0131] (3-5) Formation of electron injection layer (metal affinity layer) Next, a heating boat containing compound I-1 (described below) was energized and heated to form an electron injection layer made of Liq on the electron transport layer. The deposition rate was set to 0.01-0.02 nm / second, and the thickness was 2 nm. This electron injection layer functions as a metal affinity layer. Based on the above, an organic EL layer that emits white light was formed.

[0132] [ka]

[0133] (4) Formation of the second electrode Furthermore, a Mg / Ag mixture (Mg:Ag = 1:9 (vol ratio)) was deposited to a thickness of 10 nm to form a second electrode and its extraction electrode.

[0134] (5) Formation of the capping layer Subsequently, the sample was transferred back into the original vacuum chamber, and α-NPD (4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl) was deposited onto the second electrode at a deposition rate of 0.1 to 0.2 nm / second until a thickness of 40 nm was achieved, forming a capping layer for the purpose of improving light extraction.

[0135] (6) Formation of the first sealing layer Next, a first encapsulation layer, 500 nm thick, of silicon nitride (SiNx, Vickers hardness HV900) was formed by plasma CVD to cover the light-emitting portion of the organic EL element fabricated as described above.

[0136] (7) Formation of the second sealing layer Next, the encapsulation composition 1 prepared above was left to stand in a 60°C constant temperature bath for one week, and then filled into the cartridge-integrated head of an inkjet device under a nitrogen environment. Then, the organic EL element, which had the first encapsulation layer formed, was coated with the encapsulation composition 1 after the time-dependent changes using an inkjet method under a nitrogen environment. After that, 1 J / cm² was applied using a 395 nm air-cooled LED (manufactured by Phoseon Technology). 2 The second sealing layer was formed by irradiating with UV light using the accumulated energy of the first layer. The thickness of the second sealing layer was determined by adjusting the number of inkjet coatings and the resolution, resulting in the formation of two different thicknesses of the second sealing layer. • 1 μm (single application) • 10 μm (applied twice)

[0137] (8) Formation of the third sealing layer Next, a third sealing layer of silicon nitride (SiNx) with a thickness of 500 nm (Vickers hardness HV900) was formed on the second sealing layer by plasma CVD, thereby obtaining an evaluation organic EL element 1 with the first to third sealing layers formed on it.

[0138] [Fabrication of Organic EL elements 2-16 and 101-111] Organic EL elements 2-16 and 101-111 for evaluation were fabricated in the same manner as described above, except that the encapsulation composition 1 used in the formation of the second encapsulation layer was changed as shown in the table below.

[0139] [Table 1]

[0140] [Table 2]

[0141] [Evaluation of Organic EL Devices] <Sealing performance (moisture barrier properties)> Each organic EL element used for evaluation was placed in a constant temperature and humidity chamber (temperature 85°C, relative humidity 85%) to perform accelerated degradation tests. Each organic EL element was removed from the chamber at regular intervals and allowed to emit light at room temperature to check for the presence or absence of dark spots (DS) during accelerated degradation at 85°C and 85%. The lifespan was defined as the time it took for the dark spot area ratio within the light-emitting region to reach 0.5%, and the lifespan was evaluated accordingly. A longer lifespan indicates higher sealing performance. ◎, ○, and △ were considered passing grades according to the evaluation criteria below. (Evaluation Criteria) ××: Lifespan less than 50 hours ×: Lifespan of 50 hours or more but less than 100 hours △: Lifespan of 100 hours or more but less than 300 hours ○: Lifespan of 300 hours or more but less than 500 hours ◎: Lifespan of 500 hours or more

[0142] <Flexural resistance> Each organic EL element was wrapped around a 10mm diameter metal roller and placed in a constant temperature and humidity chamber (temperature 60°C, relative humidity 90%) for accelerated degradation testing. During this process, the polyimide film substrate was in contact with the metal roller. After 1500 hours, each organic EL element was removed from the constant temperature and humidity chamber and examined under a microscope at room temperature, along with checking its luminescence state (dark spot area ratio). ◎, ○, and △ according to the evaluation criteria below were considered passing grades. (Evaluation Criteria) ××: Peeling or non-luminescence of the sealing layer. ×: Dark spot area ratio is 1% or more △: Dark spot area ratio is 0.5% or more but less than 1% ○: Dark spot area ratio is 0.1% or more but less than 0.5% ◎: Dark spot area ratio is less than 0.1%

[0143] <Luminous properties> The luminescence characteristics were evaluated by comparing the luminescence efficiency with that of a comparative organic EL element. For comparison, the organic EL element was prepared using alkali-free glass instead of the film substrate used in the organic EL element fabricated above. Alternatively, instead of forming the first, second, and third sealing layers, sealing was performed using a glass sealing can coated with barium oxide under a nitrogen atmosphere. An ultraviolet-curing adhesive was used to bond the sealing can to the substrate of the organic EL element, and the two were bonded by irradiation with ultraviolet light to fabricate a sealed element (a comparative organic EL element). The obtained comparative organic EL elements and the organic EL elements 1-16 and 101-111 fabricated as described above were subjected to a 2.5 mA / cm² test. 2 The front emission spectrum was measured when a constant current was applied, and the luminous efficiency (lm / W) was evaluated. A spectroradiometer CS-1000 (manufactured by Konica Minolta) was used for the measurements. The ratio of the luminous efficiency of organic EL elements 1-16 and 101-111 to the luminous efficiency of a comparative organic EL element was evaluated according to the following evaluation criteria. ◎, ○, and △ below were considered passing grades. (Evaluation Criteria) ××: Luminous efficiency is 90% or less ×: Greater than 90% and less than or equal to 100% △: Greater than 100% and 110% or less ○: Greater than 110% and less than or equal to 120% ◎: Greater than 120%

[0144] [Table 3]

[0145] As shown in the results above, the organic EL element formed with a sealing layer using the sealing composition of the present invention exhibits higher sealing performance, better bending resistance, and superior luminous efficiency, adhesion, and ink ejection compared to the comparative organic EL element. In Table III, the term "invention" in the remarks column for organic EL elements No. 2, 4, and 16 shall be read as "reference example". [Industrial applicability]

[0146] The present invention can be used in an electronic device encapsulation composition, an electronic device encapsulation film formation method, and an electronic device encapsulation film, which exhibit excellent inkjet ejection over time, excellent sealing performance, bending resistance, and adhesion, and as a result, can be used to obtain an electronic device with excellent luminescence efficiency.

Claims

1. A composition for encapsulating electronic devices, comprising a photocurable monomer (A) and a photopolymerization initiator (B), The photocurable monomer (A) contains at least a linear (meth)acrylate monomer (A1) and a linear (meth)acrylate monomer (A2), The chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an alkylene oxide skeleton, The chain-like (meth)acrylate monomer (A2) comprises at least one cyclic group selected from a phenyl group or phenylene group, a heterocyclic group and a cycloalkyl group, An electronic device encapsulation composition wherein the content of the linear (meth)acrylate monomer (A1) in the total encapsulation composition is in the range of 70 to 95% by mass, and the content of the linear (meth)acrylate monomer (A2) in the total encapsulation composition is in the range of 5 to 30% by mass.

2. The electronic device encapsulation composition according to claim 1, wherein the chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an ethylene oxide skeleton.

3. The electronic device encapsulation composition according to claim 1, wherein the chain-like (meth)acrylate monomer (A1) is selected from ethylene glycol di(meth)acrylate having a structure represented by the following general formula (1) or di(meth)acrylate having 6 to 10 carbon atoms in the alkylene skeleton. 【Chemistry 1】

4. The electronic device encapsulation composition according to claim 1, wherein, when the total mass of the monomers contained is 100, the total number of oxygen atoms per mass ratio of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) is 4.5 or more.

5. A method for forming a sealing film using an electronic device sealing composition according to any one of claims 1 to 4, A step of forming a first sealing layer on an electronic device by a vapor phase method, A method for forming an electronic device encapsulation film, comprising the step of forming a second encapsulation layer by applying the electronic device encapsulation composition onto the first encapsulation layer.

6. The method for forming an electronic device encapsulation film according to claim 5, further comprising the step of forming a third encapsulation layer on the second encapsulation layer by a vapor phase method.

7. The method for forming an electronic device encapsulation film according to claim 5, wherein the step of forming the second encapsulation layer is performed using an inkjet method.

8. An electronic device sealing film for sealing an electronic device, A first sealing layer containing silicon nitride, silicon oxide, or silicon oxynitride, An electronic device encapsulation film having a second encapsulation layer using the electronic device encapsulation composition according to any one of claims 1 to 4.

9. A third sealing layer containing silicon nitride, silicon oxide, or silicon oxynitride is placed on the second sealing layer. An electronic device sealing film according to claim 8, having the following characteristics.

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