Multilayer devices

The multilayer device addresses the narrow bandwidth and cost issues of conventional substrates by incorporating differential lines and varied electrode structures, enhancing signal blocking capabilities and cost-effectiveness.

JP7836960B2Active Publication Date: 2026-03-30PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-09-22
Publication Date
2026-03-30

AI Technical Summary

Technical Problem

Conventional functional substrates have a narrow frequency bandwidth for blocking high-speed and high-frequency signals and increase the number of layers, leading to higher costs.

Method used

A multilayer device with a dielectric, signal line, ground electrode, planar electrodes, and connecting electrodes, featuring differential lines and varying electrode structures to broaden the stopband and suppress cost increases.

Benefits of technology

The multilayer device widens the stopband to block high-speed and high-frequency signals effectively while maintaining cost efficiency.

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Abstract

To provide a multilayer device which can expand a stop band which stops signal passage.SOLUTION: A multilayer device 1A includes: a signal line 20 which transmits a signal; a ground electrode 30 which is set to be ground potential; a plurality of plane electrodes 40 arranged in parallel to the ground electrode 30 along a first direction d1; dielectrics 10 each provided between each of the signal line 20, the plurality of plane electrodes 40 and the ground electrode 30; and a plurality of connection electrodes 50 placed between each of the plurality of plane electrodes 40 and the ground electrode 30 to connect the plurality of plane electrodes 40 and the ground electrode 30. At least one of the electrodes of the plurality of plane electrodes 40 and the plurality of connection electrodes 50 has different two or more electrode structure types.SELECTED DRAWING: Figure 3
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Description

[Technical Field]

[0001] This disclosure relates to multilayer devices. [Background technology]

[0002] Conventionally, functional substrates that control the transmission characteristics of high-speed digital signals and high-frequency signals (hereinafter referred to as high-speed and high-frequency signals) are known. As an example of this type of functional substrate, Patent Document 1 discloses a functional substrate comprising a mushroom structure composed of conductive elements (planar electrodes) and through vias (connecting electrodes), and a conductor that functions as a ground (ground electrode). This functional substrate has a structure in which the mushroom structures are arranged periodically, and can suppress the transmission of signals of specific frequencies among high-speed and high-frequency signals. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] International Publication No. 2011 / 111311 [Overview of the project] [Problems that the invention aims to solve]

[0004] However, conventional functional boards have the problem that while they can block the passage of signals at specific frequencies among high-speed and high-frequency signals, the frequency bandwidth they can block is narrow.

[0005] Furthermore, forming the above-mentioned mushroom structure on a conventional functional substrate presents a problem in that it increases the number of layers in the functional substrate, leading to increased costs.

[0006] In view of the above, this disclosure aims to provide a multilayer device that can broaden the stopband that blocks the passage of signals.

[0007] Furthermore, this disclosure aims to provide a multilayer device that can suppress the cost increase of conventional functional substrates. [Means for solving the problem]

[0008] A multilayer device according to one aspect of the present disclosure comprises: a dielectric; a signal line provided inside the dielectric such that a portion of it is exposed to the outer surface of the dielectric; a ground electrode provided inside or on the outer surface of the dielectric such that at least a portion of it is exposed to the outer surface of the dielectric; a plurality of planar electrodes provided inside the dielectric and arranged parallel to the ground electrode and along a first direction; a plurality of connecting electrodes provided inside the dielectric and connecting the plurality of planar electrodes and the ground electrode; a plurality of signal terminals provided on the outer surface of the dielectric and connected to the signal line; and a plurality of ground terminals provided on the outer surface of the dielectric and connected to the ground electrode. The signal line is composed of two parallel lines provided in the dielectric, and these two parallel lines are a differential line through which differential signals are transmitted.

[0009] A multilayer device according to one aspect of the present disclosure comprises: a signal line for transmitting a signal; a ground electrode set to ground potential; a plurality of planar electrodes arranged parallel to the ground electrode and along a first direction; a dielectric provided between the signal line, the plurality of planar electrodes, and the ground electrode; and a plurality of connecting electrodes located between the plurality of planar electrodes and the ground electrode, connecting the plurality of planar electrodes and the ground electrode. The signal line is composed of two parallel lines provided in the dielectric, and the two parallel lines are differential lines through which differential signals are transmitted. At least one of the plurality of planar electrodes and the plurality of connecting electrodes has two or more different electrode structures. [Effects of the Invention]

[0010] The multilayer devices of this disclosure can widen the stopband that blocks the passage of signals. Furthermore, the multilayer devices of this disclosure can suppress the increase in cost of the printed circuit board on which the multilayer devices are mounted. [Brief explanation of the drawing]

[0011] [Figure 1]It is a perspective view showing an example of a multilayer device. [Figure 2] It is a diagram showing an example of an equivalent circuit of the multilayer device shown in FIG. 1. [Figure 3] It is a perspective view schematically showing the multilayer device according to Embodiment 1. [Figure 4A] It is a top view of the multilayer device according to Embodiment 1. [Figure 4B] It is a cross-sectional view of the multilayer device according to Embodiment 1 taken along line IVB-IVB shown in FIG. 4A. [Figure 4C] It is a bottom view of the multilayer device according to Embodiment 1. [Figure 5] It is a cross-sectional view showing another example of the multilayer device according to Embodiment 1. [Figure 6] It is a cross-sectional view showing another example of the multilayer device according to Embodiment 1. [Figure 7A] It is a top view of the multilayer device according to Modification 1 of Embodiment 1. [Figure 7B] It is a cross-sectional view of the multilayer device according to Modification 1 of Embodiment 1 taken along line VIIB-VIIB shown in FIG. 7A. [Figure 8] It is a diagram showing the multilayer device of the reference example. [Figure 9] It is a diagram showing the passing characteristics of the multilayer device of the reference example. [Figure 10] It is a diagram showing the multilayer device according to Modification 2 of Embodiment 1. [Figure 11] It is a diagram showing the passing characteristics of the multilayer device according to Modification 2 of Embodiment 1. [Figure 12] It is a diagram showing the multilayer device according to Modification 3 of Embodiment 1. [Figure 13] It is a diagram showing the passing characteristics of the multilayer device according to Modification 3 of Embodiment 1. [Figure 14] It is a diagram showing the multilayer device according to Modification 4 of Embodiment 1. [Figure 15] It is a diagram showing the passing characteristics of the multilayer device according to Modification 4 of Embodiment 1. [Figure 16]This is a cross-sectional view showing a multilayer device according to Embodiment 2. [Figure 17] This is a schematic perspective view showing a multilayer device according to Embodiment 3. [Figure 18] This is a schematic perspective view showing a multilayer device according to a modified example 1 of Embodiment 3. [Figure 19] This figure shows the signal line, planar electrode, and ground electrode of a multilayer device according to Embodiment 3. [Figure 20A] This figure shows the pass characteristics of differential mode signals in the multilayer device of Embodiment 3. [Figure 20B] This figure shows the pass characteristics of a common-mode signal in a multilayer device according to Embodiment 3. [Figure 20C] This figure shows the pass characteristics of the common-differential conversion signal and the differential-common conversion signal of the multilayer device of Embodiment 3. [Figure 21A] This is a top view of the multilayer device according to Embodiment 4. [Figure 21B] This is a cross-sectional view of the multilayer device according to Embodiment 4, taken from the XXIB-XXIB line shown in Figure 21A. [Figure 22] This figure shows the pass characteristics of a multilayer device according to Embodiment 4. [Figure 23A] This is a top view of the multilayer device according to Embodiment 5. [Figure 23B] This is a cross-sectional view of the multilayer device according to Embodiment 5, taken from the line XXIIIB-XXIIIB shown in Figure 23A. [Figure 24] This figure shows the pass characteristics of a multilayer device according to Embodiment 5. [Figure 25] This is an external view of a multilayer device according to Embodiment 6. [Figure 26] This figure shows the signal line, planar electrode, ground electrode, and connecting electrode of a multilayer device according to Embodiment 6. [Figure 27A] This is a top-down plan view of the signal lines and other components of a multilayer device according to Embodiment 6. [Figure 27B]This is a cross-sectional view of the multilayer device according to Embodiment 6, taken from the line XXVIIB-XXVIIB shown in Figure 27A. [Figure 27C] This is a bottom view of a multilayer device according to Embodiment 6. [Figure 28] This figure shows the signal line, planar electrode, ground electrode, and connecting electrode of a multilayer device according to Embodiment 7. [Modes for carrying out the invention]

[0012] (Background leading to this disclosure) The circumstances leading to this disclosure will be explained with reference to Figures 1 and 2.

[0013] Figure 1 is a perspective view showing an example of a multilayer device 1.

[0014] As shown in Figure 1, the multilayer device 1 comprises a signal line 20 for transmitting high-speed, high-frequency signals, a ground electrode 30 set to ground potential, a plurality of planar electrodes 40 arranged along the signal line 20, and a plurality of connecting electrodes 50 connecting the ground electrode 30 and the plurality of planar electrodes 40. The signal line 20, ground electrode 30, planar electrodes 40, and connecting electrodes 50 are provided inside or on the surface of a dielectric (not shown).

[0015] This multilayer device 1 has a structure in which multiple mushroom structures, each consisting of a planar electrode 40 and a connecting electrode 50, are arranged at sufficiently small intervals relative to the wavelength of the electromagnetic wave. A structure in which multiple mushroom structures are arranged at sufficiently small intervals relative to the wavelength of the electromagnetic wave is also called an EBG (Electromagnetic Band Gap) structure. In a multilayer device 1 having an EBG structure, it is possible to make the effective dielectric constant and magnetic permeability in the medium negative.

[0016] Figure 2 shows an example of the equivalent circuit of the multilayer device 1 shown in Figure 1.

[0017] The equivalent circuit shown in Figure 2 consists of an inductive component L20 of the signal line 20 and a parallel circuit (parallel resonant circuit) provided between the path connecting the signal line 20 and the ground electrode 30. The parallel circuit consists of a capacitive component C40 based on the signal line 20 and the planar electrode 40, an inductive component L50 from the connecting electrode 50, and a capacitive component C20 based on the signal line 20 and the ground electrode 30.

[0018] In multilayer device 1, by arranging multiple mushroom structures as shown in Figure 1, the admittance of the parallel circuit shown in Figure 2 can be controlled, and the dielectric constant can be made negative. In the bandwidth where the dielectric constant is negative, high-speed and high-frequency signals cannot propagate along the signal line, and multilayer device 1 functions as a bandstop filter.

[0019] However, as shown in Figure 2, when multiple mushroom structures are arranged with the same size and the same array pitch, the width of the stopband that blocks the passage of high-speed and high-frequency signals may be insufficient. In contrast, the multilayer device of this embodiment has the following configuration in order to broaden the stopband that blocks the passage of high-speed and high-frequency signals.

[0020] The embodiments will be described in more detail below with reference to the drawings.

[0021] The embodiments described below are all specific examples of this disclosure. The numerical values, shapes, materials, components, arrangement positions of components, connection configurations, steps, and the order of steps shown in the following embodiments are examples only and are not intended to limit this disclosure. Furthermore, any components in the following embodiments that are not described in an independent claim will be described as optional components.

[0022] Furthermore, in this specification, terms indicating relationships between elements such as parallelism, terms indicating the shape of elements such as rectangular prisms, and numerical ranges do not represent only strict meanings, but also include substantially equivalent ranges, such as differences of a few percent.

[0023] Furthermore, each figure is a schematic diagram that has been appropriately emphasized, omitted, or had its proportions adjusted to illustrate this disclosure, and is not necessarily a strict representation; it may differ from the actual shape, positional relationships, and proportions. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0024] Furthermore, in this specification, the terms "top surface" and "bottom surface" in the configuration of a multilayer device do not refer to the top surface (vertically upward surface) and bottom surface (vertically downward surface) in absolute spatial perception, but rather are used as terms defined by the relative positional relationship of the components of the multilayer device.

[0025] (Embodiment 1) [Multilayer device configuration] The configuration of the multilayer device 1A according to Embodiment 1 will be described with reference to Figures 3 to 6.

[0026] Figure 3 is a schematic perspective view of the multilayer device 1A according to Embodiment 1. Figure 4A is a top view of the multilayer device 1A. Figure 4B is a cross-sectional view of the multilayer device 1A taken along the IVB-IVB line shown in Figure 4A. Figure 4C is a bottom view of the multilayer device 1A. Note that in Figure 3, the outline of the multilayer device 1A is shown with a dashed line, and the thickness of the signal line 20, the planar electrodes 41, 42, 43, and the ground electrode 30 is not shown. In Figures 4A and 4B, the signal line 20, the planar electrodes 41, 42, 43, and the ground electrode 30 are shown at a larger size than in Figure 3.

[0027] As shown in Figures 3 and 4A to 4C, the multilayer device 1A comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1A also comprises a plurality of signal terminals 61 and 62, and a plurality of ground terminals 71, 72, 73, and 74.

[0028] In the following, some or all of the multiple planar electrodes 41-43 may be referred to as planar electrodes 40, and some or all of the multiple connecting electrodes 51-53 may be referred to as connecting electrodes 50. Also, some or all of the multiple signal terminals 61, 62 may be referred to as signal terminals 60, and some or all of the multiple ground terminals 71-74 may be referred to as ground terminals 70.

[0029] For example, the signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 are formed from a metallic material such as silver or copper. The signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 may be formed from the same material or the same composition ratio, or from different materials or different composition ratios.

[0030] The dielectric 10 is formed, for example, by stacking multiple dielectric layers. The dielectric 10 is formed from a dielectric material such as low-temperature co-fired ceramics (LTCC). The relative permittivity of the dielectric 10 is, for example, 7, which is higher than the relative permittivity of the glass epoxy substrate. In order to miniaturize the multilayer device 1A, it is desirable to use a material with a high relative permittivity as the dielectric 10. The dielectric 10 is provided between the signal line 20, the ground electrode 30, the planar electrode 40, and the connecting electrode 50. The dielectric 10 is formed to cover the outer surface of the signal line 20, excluding both end faces, and the electrode structure consisting of the planar electrode 40 and the connecting electrode 50. The dielectric 10 is also formed to cover the top surface of the ground electrode 30, excluding both the bottom and both end faces.

[0031] The dielectric 10 has a rectangular parallelepiped shape and has a bottom surface 16, a top surface 17 facing away from the bottom surface 16, and a plurality of sides 11, 12, 13, and 14 connecting the bottom surface 16 and the top surface 17. The plurality of sides 11 to 14 have sides 11 and 12 facing away from each other, and sides 13 and 14 perpendicular to both sides 11 and 12. The bottom surface 16 and the top surface 17 are parallel to each other, sides 11 and 12 are parallel to each other, and sides 13 and 14 are parallel to each other. The corner portions (edge ​​portions) where each surface of the dielectric 10 intersect may be rounded.

[0032] Here, the direction in which side 11 and side 12 are facing away from each other is called the first direction d1, the direction in which side 13 and side 14 are facing away from each other is called the second direction d2, and the direction in which the bottom surface 16 and top surface 17 are facing away from each other is called the third direction d3. Furthermore, below, the negative side of the first direction d1 may be referred to as "one side," and the positive side, which is the opposite of the negative side, may be referred to as "the other side."

[0033] The signal line 20 is straight and is provided along a first direction d1, which is the direction from one end face of the dielectric 10 to the opposite end face. As mentioned above, the first direction d1 is the direction in which side faces 11 and side faces 12, and is the same direction as the straight line connecting both ends of the signal line 20. The signal line 20 is provided inside the dielectric 10 such that both ends, which are part of the signal line 20, are exposed on the outer surface (side faces 11 and 12) of the dielectric 10. The signal line 20 is also strip-shaped and is arranged parallel to the ground electrode 30, which will be described later. When the multilayer device 1A is mounted on an electronic device, high-speed and high-frequency signals are input and output to the signal line 20 via the signal terminal 60.

[0034] The signal terminals 60 are provided on the outer surfaces 11 and 12 of the dielectric 10. One of the two signal terminals 61 and 62, signal terminal 61, is provided on side surface 11, and the other signal terminal 62 is provided on side surface 12. One end of the signal line 20 is connected to one signal terminal 61, and the other end of the signal line 20 is connected to the other signal terminal 62.

[0035] The ground electrode 30 is provided on the bottom surface 16 of the dielectric 10 and extends to the sides 11 and 12. The ground electrode 30 is provided on the bottom surface 16 at a predetermined distance from the signal terminal 60 so as not to contact the signal terminal 60. Alternatively, the ground electrode 30 may be provided inside the dielectric 10 instead of on the bottom surface 16, and a portion of the ground electrode 30 may be exposed on the sides 11 and 12 of the dielectric 10. When the multilayer device 1A is mounted in an electronic device, the ground electrode 30 is set to ground potential via the ground terminal 70. Furthermore, the ground electrode 30 may have a structure with an opening pattern, such as a mesh structure, rather than a solid pattern. By making the ground electrode 30 a mesh structure, the dielectric 10 can be joined together to increase the bonding strength.

[0036] The ground terminal 70 is provided on the outer surfaces 11 and 12 of the dielectric 10. Of the four ground terminals 71 to 74, one set of ground terminals 71 and 73 is provided on side surface 11, and the other set of ground terminals 72 and 74 is provided on side surface 12. One end of the ground electrode 30 is connected to one set of ground terminals 71 and 73, and the other end of the ground electrode 30 is connected to the other set of ground terminals 72 and 74. One set of ground terminals 71 and 73 is located on either side of one signal terminal 61 in the second direction d2. The other set of ground terminals 72 and 74 is located on either side of the other signal terminal 62 in the second direction d2. In other words, one signal terminal 61 is located between the two ground terminals 71 and 73, and the other signal terminal 62 is located between the two ground terminals 72 and 74.

[0037] The number of ground terminals 70 is not limited to four; there may be two. One ground terminal 70 may be provided on each of the sides 11 and 12, or on each of the sides 13 and 14 of the dielectric 10. For example, one ground terminal 70 may be provided on each of the sides 11 and 12. In this case, it is desirable to arrange the ground terminals 70 diagonally so that the mounting orientation does not need to be considered. Furthermore, the ground terminals 70 may be provided not only on sides 11 and 12, but also on sides 13 and 14. Alternatively, the ground terminals 70 may be provided only on sides 13 and 14.

[0038] The planar electrode 40 is provided inside the dielectric 10 so as to be located between the signal line 20 and the ground electrode 30 in the third direction d3. The planar electrode 40 is arranged parallel to the signal line 20 and the ground electrode 30. The gap between the planar electrode 40 and the signal line 20 is smaller than the gap between the ground electrode 30 and the signal line 20. In this embodiment, the gap between the planar electrode 40 and the signal line 20 is, for example, 0.1 to 0.5 times the gap between the ground electrode 30 and the signal line 20, but the size of this gap is appropriately set according to the stopband required for the multilayer device 1A. The multiple planar electrodes 40 are planar electrodes having a square shape. Note that the shape of the planar electrode 40 is not limited to a square, but may be rectangular, polygonal, circular, or elliptical.

[0039] Multiple planar electrodes 41, 42, and 43 are arranged in this order along the first direction d1, i.e., along the signal line 20. Each planar electrode 41-43 is positioned such that its center aligns with the centerline cL of the signal line 20. The width of each planar electrode 41-43 (length in the second direction d2) is greater than the width of the signal line 20.

[0040] The connecting electrode 50 is a via conductor that connects the multiple planar electrodes 40 and the ground electrode 30, and is provided inside the dielectric 10. The connecting electrode 50 is formed to penetrate the dielectric 10 located between the multiple planar electrodes 40 and the ground electrode 30. The connecting electrode 50 is columnar, and its diameter is greater than the thickness of the planar electrodes 40. The length of the connecting electrode 50 is smaller than the gap between the ground electrode 30 and the signal line 20. In this multilayer device 1A, changing the length of the connecting electrode 50 also changes the gap between the planar electrodes 40 and the signal line 20.

[0041] Each connecting electrode 51 to 53 is provided along the first direction d1 so as to correspond one-to-one with each planar electrode 41 to 43. Specifically, connecting electrode 51 is provided to connect planar electrode 41 and ground electrode 30, connecting electrode 52 is provided to connect planar electrode 42 and ground electrode 30, and connecting electrode 53 is provided to connect planar electrode 43 and ground electrode 30. Furthermore, each connecting electrode 51 to 53 is connected to the center of each planar electrode 41 to 43. However, each connecting electrode 51 to 53 does not necessarily have to be connected to the center of each planar electrode 41 to 43; it may also be connected to the outer edge of each planar electrode 41 to 43.

[0042] In this embodiment, the multilayer device 1A has at least one of the electrodes of the plurality of planar electrodes 40 and the plurality of connecting electrodes 50 having two or more different electrode structures in order to broaden the stopband that blocks the passage of high-speed and high-frequency signals. Different types of electrode structures mean, for example, that at least one of the shapes, sizes, and positions of the plurality of electrodes is different.

[0043] First, the electrode structure of the multiple planar electrodes 40 will be described. The multiple planar electrodes 40 have at least two different electrode structures with respect to at least one of the opposing area between the signal line 20 and the planar electrodes 40, and the arrangement pitch of the multiple planar electrodes 40 arranged along the first direction d1.

[0044] As shown in Figures 3 and 4A, the multiple planar electrodes 41-43 are formed from electrodes of different sizes. For example, the area of ​​contact between the signal line 20 and the planar electrode 42 is larger than the area of ​​contact between the signal line 20 and the planar electrode 41, and is at least 1.1 times the area of ​​contact between the signal line 20 and the planar electrode 41. The area of ​​contact between the signal line 20 and the planar electrode 43 is larger than the area of ​​contact between the signal line 20 and the planar electrode 42, and is at least 1.1 times the area of ​​contact between the signal line 20 and the planar electrode 42.

[0045] In this embodiment, at least one of the multiple planar electrodes 40 (e.g., 41) has a different area of ​​contact between the signal line and the planar electrode compared to the other planar electrodes (e.g., 42). This multilayer device 1A has three different electrode structures for the area of ​​the multiple planar electrodes 40. Therefore, it is possible to generate multiple types of capacitive components C40 (see Figure 2) based on the signal line 20 and the planar electrodes 40. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0046] Furthermore, as shown in Figures 4A and 4B, the array pitches of adjacent pairs of planar electrodes 40 along the first direction d1 are formed with different array pitches. The array pitch of multiple planar electrodes 40 is the distance between the centers of two adjacent planar electrodes 40 along the first direction d1. The array pitch p2 of planar electrodes 42 and 43 is greater than the array pitch p1 of planar electrodes 41 and 42; for example, the array pitch p2 is 1.1 times or more the array pitch p1.

[0047] Thus, in this embodiment, the distance between the centers of one pair of adjacent planar electrodes (e.g., 41, 42) along the first direction d1 is different from the distance between the centers of another pair of planar electrodes (e.g., 42, 43) which is a different combination from the one described above. This multilayer device 1A has two different electrode structures with respect to the arrangement pitch of the multiple planar electrodes 40. As a result, the lengths of the signal lines 20 corresponding to one pair of planar electrodes 40 and the connecting electrode 50 are different, and multiple types of capacitive components C20 (see Figure 2) based on the signal lines 20 and the ground electrode 30 can be generated. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0048] Next, the electrode structure of the multiple connecting electrodes 50 will be described with reference to Figures 5 and 6. The multiple connecting electrodes 50 may have two or more different electrode structures with respect to at least one of the cross-sectional area of ​​the multiple connecting electrodes 50 and the length of the multiple connecting electrodes 50. The cross-sectional area of ​​the connecting electrode 50 is the area of ​​the cross-section perpendicular to the conductive path connecting the ground electrode 30 and the planar electrode 40. The length of the connecting electrode 50 is the length of the conductive path connecting the ground electrode 30 and the planar electrode 40.

[0049] Figure 5 is a cross-sectional view showing another example of the multilayer device 1A.

[0050] As shown in Figure 5, each of the multiple connecting electrodes 51 to 53 is a via conductor and is formed with a different via diameter. For example, the cross-sectional area of ​​connecting electrode 52 is larger than the cross-sectional area of ​​connecting electrode 51, and is 1.1 times or more the cross-sectional area of ​​connecting electrode 51. The cross-sectional area of ​​connecting electrode 53 is larger than the cross-sectional area of ​​connecting electrode 52, and is 1.1 times or more the area of ​​connecting electrode 52. In order to broaden the stopband and equalize the attenuation in the stopband, the cross-sectional area of ​​connecting electrode 52 may be set to 1.96 times or less the cross-sectional area of ​​connecting electrode 51, and the cross-sectional area of ​​connecting electrode 53 may be set to 1.65 times or less the cross-sectional area of ​​connecting electrode 52.

[0051] Thus, at least one of the multiple connecting electrodes 50 (e.g., 51) has a different cross-sectional area from the other connecting electrodes (e.g., 52). The multilayer device 1A shown in Figure 5 has three different electrode structures with respect to the cross-sectional areas of the multiple connecting electrodes 50. Therefore, it is possible to generate multiple types of inductive components L50 (see Figure 2) by the connecting electrodes 50. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0052] Figure 6 is a cross-sectional view showing another example of the multilayer device 1A.

[0053] As shown in Figure 6, the multiple connecting electrodes 51 to 53 are formed with different lengths. For example, the length of connecting electrode 52 is longer than the length of connecting electrode 51, and is at least 1.1 times the length of connecting electrode 51. The length of connecting electrode 53 is longer than the length of connecting electrode 52, and is at least 1.1 times the length of connecting electrode 52.

[0054] Thus, at least one of the multiple connecting electrodes 50 (e.g., 51) has a different length from the other connecting electrodes (e.g., 52) that are different from the one connecting electrode. The multilayer device 1A shown in Figure 6 has three different electrode structures for the lengths of the multiple connecting electrodes 50. Therefore, multiple types of inductive components L50 can be generated by the connecting electrodes 50. In addition, by changing the length of the connecting electrodes 50, the gap between the signal line 20 and the planar electrode 40 changes, so multiple types of capacitive components C40 based on the signal line 20 and the planar electrode 40 can be generated. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0055] As described above, in the multilayer device 1A of this embodiment, at least one of the electrodes of the plurality of planar electrodes 40 and plurality of connecting electrodes 50 has two or more different electrode structures. Therefore, in the multilayer device 1A, multiple types of capacitive components C40, inductive components L50 and capacitive components C20 can be generated. This makes it possible to generate a stopband that includes multiple resonance points, and the stopband that blocks the passage of high-speed and high-frequency signals can be broadened.

[0056] [Manufacturing method for multilayer devices] An example of a manufacturing method for multilayer device 1A is described below. First, multiple via holes are formed in a green sheet containing dielectric material, and then electrode material is embedded in the via holes by screen printing or the like to form multiple connection electrode patterns. In addition, multiple different types of planar electrode patterns, ground electrode patterns, or signal line patterns are formed on multiple other green sheets by screen printing or the like. The green sheets with the multiple electrode patterns thus produced are stacked and pressed to form a mother laminate. Next, the mother laminate is cut into individual pieces, and the laminate after piece formation is fired. Finally, signal terminals and ground terminals are formed on the sides of the fired laminate. This completes the production of the multilayer device 1A described above.

[0057] [Modification 1 of Embodiment 1] A multilayer device 1B according to Modification 1 of Embodiment 1 will be described with reference to Figures 7A and 7B. In Modification 1, an example will be described in which the planar electrode 40 is provided on the top surface 17 side of the signal line 20.

[0058] Figure 7A is a top view of the multilayer device 1B according to Modification 1 of Embodiment 1. Figure 7B is a cross-sectional view of the multilayer device 1B as seen from the line VIIB-VIIB shown in Figure 7A.

[0059] As shown in Figures 7A and 7B, the multilayer device 1B comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1B also comprises a plurality of signal terminals 61 and 62, and a plurality of ground terminals 71, 72, 73, and 74.

[0060] The configuration of the dielectric 10, ground electrode 30, signal line 20, signal terminals 61, 62 and ground terminals 71-74 is the same as in Embodiment 1.

[0061] In Modification 1, the multiple planar electrodes 40 are located on the side of the top surface 17 that is closer to the signal line 20 in the third direction d3. In other words, the multiple planar electrodes 40 are located on the opposite side of the ground electrode 30 when viewed from the signal line 20. The signal line 20 is located between the multiple planar electrodes 40 and the ground electrode 30.

[0062] Multiple planar electrodes 41, 42, and 43 are arranged in this order along the first direction d1, i.e., along the signal line 20. Each planar electrode 41-43 is positioned such that its center aligns with the centerline cL of the signal line 20. The width of each planar electrode 41-43 (length in the second direction d2) is greater than the width of the signal line 20.

[0063] Multiple connecting electrodes 50 are conductors that connect multiple planar electrodes 40 and ground electrodes 30. Each connecting electrode 50 is formed to penetrate the dielectric 10 located between the multiple planar electrodes 40 and ground electrodes 30. The connecting electrodes 50 are columnar. To prevent the connecting electrodes 50 from contacting the signal lines 20, the diameter of the connecting electrodes 50 is less than (width of planar electrodes 40 - width of signal lines 20) / 2. The length of the connecting electrodes 50 is greater than the gap between the ground electrodes 30 and the signal lines 20. In this multilayer device 1B, changing the length of the connecting electrodes 50 also changes the gap between the planar electrodes 40 and the signal lines 20.

[0064] Each connecting electrode 51-53 is provided along the first direction d1 so as to correspond one-to-one with each planar electrode 41-43. Each connecting electrode 51-53 is connected to the outer peripheral end of each planar electrode 41-43 so as not to come into contact with the signal line 20. Specifically, connecting electrode 51 is connected to the outer peripheral end of the planar electrode 41 on the side 14 side as viewed from the center line cL of the signal line 20, connecting electrode 52 is connected to the outer peripheral end of the planar electrode 42 on the side 13 side as viewed from the center line cL of the signal line 20, and connecting electrode 53 is connected to the outer peripheral end of the planar electrode 43 on the side 14 side as viewed from the center line cL of the signal line 20. Note that connecting electrode 50 may be uniformly arranged on the same side 13 or 14.

[0065] In the multilayer device 1B of the modified example 1, at least one of the electrodes of the multiple planar electrodes 40 and the multiple connecting electrodes 50 has two or more different electrode structures. Therefore, in the multilayer device 1B, multiple types of capacitive components C40, inductive components L50, and capacitive components C20 can be generated. This makes it possible to generate a stopband containing multiple resonance points, thereby broadening the stopband that blocks the passage of high-speed and high-frequency signals.

[0066] [Effects, etc.] The effects of the multilayer device 1B having the above configuration will be explained in comparison with the reference examples of multilayer devices 101a, 101b, and 101c.

[0067] Figure 8 shows example multilayer devices 101a to 101c.

[0068] Figures 8(a), (b), and (c) show multilayer devices 101a, 101b, and 101c, respectively, having a signal line 20, a ground electrode 30, a plurality of planar electrodes 40, and a plurality of connecting electrodes (not shown). The signal line 20 is provided between the plurality of planar electrodes 40 and the ground electrode 30, similar to the multilayer device 1B in Modification 1. The connecting electrodes connect the plurality of planar electrodes 40 and the ground electrode 30, avoiding the signal line 20. The width of the signal line 20 is 0.15 mm.

[0069] The example multilayer device 101a has seven planar electrodes 40. The area between the signal line 20 and each planar electrode 40 is 0.75 mm². 2 (=0.15mm × 5mm). Two adjacent planar electrodes 40 are arranged with a gap of 2mm between them, and the arrangement pitch of the planar electrodes 40 is 7mm.

[0070] The example multilayer device 101b has seven planar electrodes 40. The area between the signal line 20 and each planar electrode 40 is 1.35 mm². 2 (=0.15mm × 9mm). Two adjacent planar electrodes 40 are arranged with a gap of 2mm between them, and the arrangement pitch of the planar electrodes 40 is 11mm.

[0071] The example multilayer device 101c has seven planar electrodes 40. The area between the signal line 20 and each planar electrode 40 is 0.75 mm². 2 (=0.15mm × 5mm). Two adjacent planar electrodes 40 are arranged with a gap of 6mm between them, and the arrangement pitch of the planar electrodes 40 is 11mm.

[0072] The dielectric constant of the substrate material for the multilayer device is 4.3, and the substrate has 6 layers. The conductor thickness is 32 μm (12 μm copper foil, 20 μm plating). The core and prepreg thickness is 200 μm. The total thickness of the multilayer device is approximately 1.2 mm ((conductor: 6 × 32 μm) + (dielectric: 200 μm × 5)).

[0073] Figure 9 shows the pass-through characteristics of the reference example multilayer devices 101a to 101c.

[0074] As shown in Figure 9, the multilayer device 101a in Figure 8(a) has an attenuation pole at a frequency of 5.56 GHz, where the insertion loss is greatest. The multilayer device 101a is capable of blocking the passage of a signal at a frequency of 5.56 GHz. The multilayer device 101b in Figure 8(b) has an attenuation pole at a frequency of 2.80 GHz, where the insertion loss is greatest. The multilayer device 101b is capable of blocking the passage of a signal at a frequency of 2.80 GHz. The multilayer device 101c in Figure 8(c) has an attenuation pole at a frequency of 5.44 GHz, where the insertion loss is greatest. The multilayer device 101c is capable of blocking the passage of a signal at a frequency of 5.44 GHz.

[0075] Thus, each of the multilayer devices 101a to 101c in Figures 8(a) to 8(c) can block the passage of signals of a predetermined frequency corresponding to the attenuation pole.

[0076] [Modification 2 of Embodiment 1] Figure 10 shows a multilayer device 1C according to a modified example 2 of Embodiment 1. The multilayer device 1C according to Modified Example 2 is constructed by connecting the three multilayer devices 101a to 101c shown in Figure 8 in series.

[0077] The multilayer device 1C of the modified example 2 is configured by connecting the output port of multilayer device 101a and the input port of multilayer device 101b with a coaxial cable, and connecting the output port of multilayer device 101b and the input port of multilayer device 101c with another coaxial cable. The multilayer device 1C according to the modified example 2 has multiple types of electrode structures with different opposing areas between the signal line 20 and the planar electrode 40 and different arrangement pitches of the planar electrode 40. Specifically, the multilayer device 1C has multiple sets of two or more structures with different opposing areas between the signal line 20 and the planar electrode 40, and also multiple sets of two or more structures with different arrangement pitches of the planar electrode 40.

[0078] Figure 11 shows the pass-through characteristics of the multilayer device 1C according to Modification 2. The vertical axis of the figure shows the S-parameter (S21).

[0079] As shown in Figure 11, the multilayer device 1C of Modified Example 2 has two attenuation poles in the frequency range of 5.44 GHz to 5.56 GHz, and the insertion loss is large in this range. The multilayer device 1C of Modified Example 2 is capable of blocking the passage of signals around the frequency range of 5.44 GHz to 5.56 GHz, and has a wider stopband bandwidth compared to the multilayer devices 101a to 101c of the Reference Example.

[0080] [Modification 3 of Embodiment 1] Next, a multilayer device 1D according to a modified example 3 of Embodiment 1 will be described.

[0081] Figure 12 shows a multilayer device 1D according to modified example 3.

[0082] The multilayer device 1D according to Modification 3 is composed of multiple planar electrodes 41-43 with different opposing areas between the signal line 20 and the planar electrode 40, and different arrangement pitches of the planar electrodes. The other configurations of the signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 are the same as in Modification 1. The width of the signal line 20 is 0.15 mm.

[0083] The multilayer device 1D of the modified example 3 has six planar electrodes 41-43. The area between the signal line 20 and the planar electrode 41 is 0.75 mm². 2 (=0.15mm × 5mm), and the opposing area between the signal line 20 and the planar electrode 42 is 1.05mm². 2 (=0.15mm × 7mm), and the opposing area between the signal line 20 and the planar electrode 43 is 1.35mm². 2The dimensions are (=0.15mm × 9mm). Multiple planar electrodes 41, 42, and 43 are arranged in this order repeatedly, and the arrangement pitch of the planar electrodes 40 is 8mm, 10mm, 9mm, 8mm, and 10mm respectively. Two adjacent planar electrodes 40 are arranged with a gap of 2mm between them. The multilayer device 1D comprises multiple sets of two or more structures with different opposing areas between the signal line 20 and the planar electrodes 40, and also multiple sets of two or more structures with different arrangement pitches of the planar electrodes 40.

[0084] Figure 13 shows the pass characteristics of the multilayer device 1D according to the modified example 3. The vertical axis of the figure shows the S-parameter (S21).

[0085] As shown in Figure 13, the multilayer device 1D of Modified Example 3 has three attenuation poles, and the insertion loss is large in each of these three attenuation poles. The multilayer device 1D of Modified Example 3 is equipped with multiple mushroom structures, making it possible to block the passage of signals of multiple predetermined frequencies by multiple attenuation poles corresponding to each structure. By arranging each attenuation pole according to desired characteristics, for example, a multilayer device 1D with a wide stopband can be realized.

[0086] [Modification 4 of Embodiment 1] Next, a multilayer device 1E according to a modified example 4 of Embodiment 1 will be described.

[0087] Figure 14 shows a multilayer device 1E according to modified example 4.

[0088] The multilayer device 1E according to Modification 4 is composed of multiple planar electrodes 41 to 43 with different facing areas between the signal line 20 and the planar electrode 40, and different arrangement pitches of the planar electrode 40. The other configurations of the signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 are the same as in Modification 1.

[0089] The multilayer device 1E of the modified example 4 has 15 planar electrodes 41-43. The opposing area of ​​the planar electrode 41 is 0.75 mm². 2and the facing area of the planar electrode 42 is 1.05 mm 2 and the facing area of the planar electrode 43 is 1.35 mm 2 The plurality of planar electrodes 41, 42, and 43 are repeatedly arranged in this order, and the arrangement pitch of the planar electrode 40 is 8 mm, 10 mm, 9 mm, 8 mm, 10 mm, 9 mm (the same hereinafter) in order. Two adjacent planar electrodes 40 are arranged with a gap of 2 mm. The multilayer device 1E includes a plurality of sets of two or more types of structures in which the facing area between the signal line 20 and the planar electrode 40 is different, and also includes a plurality of sets of two or more types of structures in which the arrangement pitch of the planar electrode 40 is different.

[0090] FIG. 15 is a diagram showing the passing characteristics of the multilayer device 1E according to the fourth modification. The vertical axis in this figure shows the S parameter (S21).

[0091] As shown in FIG. 15, the multilayer device 1E of the fourth modification has a plurality of attenuation poles, and the insertion loss increases at each of the plurality of attenuation poles. The multilayer device 1E of the fourth modification can block the passage of signals of a plurality of predetermined frequencies by the plurality of attenuation poles. Furthermore, by arranging a large number of mushroom structures, a larger attenuation amount can be ensured as compared with the multilayer device 1D of the third modification, and high performance can be realized.

[0092] (Embodiment 2) [Configuration of Multilayer Device] The configuration of the multilayer device 1F according to Embodiment 2 will be described with reference to FIG. 16. In Embodiment 2, an example in which the multilayer device 1F has a multilayer structure will be described.

[0093] FIG. 16 is a cross-sectional view showing the multilayer device 1F according to Embodiment 2.

[0094] As shown in Figure 16, the multilayer device 1F comprises a dielectric 10, a signal line 20, a plurality of ground electrodes 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1F also comprises a plurality of signal terminals 61 and 62, and a plurality of ground terminals 71, 72, 73, and 74.

[0095] The multilayer device 1F has a multilayer structure in which multiple stacked laminates, each consisting of a signal line 20, a ground electrode 30, multiple planar electrodes 40, and multiple connecting electrodes 50, are stacked.

[0096] The dielectric 10 is formed, for example, by stacking multiple dielectric layers. The dielectric 10 is provided between the signal line 20, the ground electrode 30, the planar electrode 40, and the connecting electrode 50, respectively.

[0097] The signal line 20 has multiple layers of signal lines. The signal line 20 is composed of a first layer, a second layer, and a third layer of signal lines, as well as via conductors connecting the first and second layer signal lines and via conductors connecting the second and third layer signal lines. The other end of the first layer signal line is connected to the other signal terminal 62, and one end of the third layer signal line is connected to the other signal terminal 61.

[0098] Multiple ground electrodes 30 are provided on the bottom surface 16 of the dielectric 10 or inside it. Specifically, of the multiple ground electrodes 30, the first layer ground electrode 30 is provided on the bottom surface 16 of the dielectric 10, and the second and third layers ground electrodes 30 are provided inside the dielectric 10. The second and third layers ground electrodes 30 are provided with through holes for passing the via conductors of the signal line 20 so as not to come into contact with the via conductors of the signal line 20. One end of each ground electrode 30 is connected to one ground terminal 71, 73, and the other end of each ground electrode 30 is connected to the other ground terminal 72, 74 (not shown).

[0099] The multiple planar electrodes 40 are composed of planar electrodes 41-43 in the first layer, planar electrodes 41-43 in the second layer, and planar electrodes 41-43 in the third layer. The multiple planar electrodes 40 are arranged in the order of planar electrodes 41, 42, and 43 for each of the three layers of the signal line 20.

[0100] The multiple connecting electrodes 50 consist of connecting electrodes 51-53 in the first layer, connecting electrodes 51-53 in the second layer, and connecting electrodes 51-53 in the third layer. The multiple connecting electrodes 50 are arranged in the order of connecting electrodes 51, 52, and 53 so that they correspond one-to-one with the planar electrodes 41-43 in each layer.

[0101] In the multilayer device 1F of Embodiment 2, at least one of the electrodes of the multiple planar electrodes 40 and the multiple connecting electrodes 50 has two or more different electrode structures. Therefore, in the multilayer device 1F, multiple types of capacitive components C40, inductive components L50, and capacitive components C20 can be generated. This makes it possible to generate a stopband that includes multiple resonance points, thereby broadening the stopband that blocks the passage of high-speed and high-frequency signals.

[0102] (Embodiment 3) [Multilayer device configuration] The configuration of the multilayer device 1G according to Embodiment 3 will be described with reference to Figure 17. Embodiment 3 describes an example in which the multilayer device 1G is a common-mode filter.

[0103] Figure 17 is a schematic perspective view showing the multilayer device 1G according to Embodiment 3.

[0104] As shown in Figure 17, the multilayer device 1G comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1G also comprises a plurality of signal terminals 61, 62, 63, and 64, and a plurality of ground terminals 71, 72, 73, and 74.

[0105] The configuration of the dielectric 10, ground electrode 30, and ground terminals 71-74 is the same as in Embodiment 1.

[0106] The signal line 20 is a differential line composed of two parallel signal lines 20a and 20b provided in the dielectric 10. Each signal line 20a and 20b is linear and located inside the dielectric 10 along the first direction d1. Each signal line 20a and 20b is strip-shaped and arranged parallel to the ground electrode 30. When the multilayer device 1G is mounted in an electronic device, differential signals are transmitted through the two signal lines 20a and 20b.

[0107] Multiple signal terminals 61-64 are provided on the sides 11 and 12 of the dielectric 10. Of the four signal terminals 61-64, one set of signal terminals 61 and 63 is provided on side 11, and the other set of signal terminals 62 and 64 is provided on side 12. One end of signal line 20a is connected to one signal terminal 61, and one end of signal line 20b is connected to one signal terminal 63. The other end of signal line 20a is connected to the other signal terminal 62, and the other end of signal line 20b is connected to the other signal terminal 64. One set of signal terminals 61 and 63 is positioned between two ground terminals 71 and 73, and the other set of signal terminals 62 and 64 is positioned between two ground terminals 72 and 74.

[0108] The multiple planar electrodes 40 are composed of planar electrodes 41, 42, and 43. The multiple planar electrodes 41, 42, and 43 are arranged in this order along the first direction d1, that is, along each signal line 20a, 20b.

[0109] The multiple connecting electrodes 50 are composed of connecting electrodes 51, 52, and 53. The multiple connecting electrodes 51, 52, and 53 are arranged along the first direction d1 so as to correspond one-to-one with the multiple planar electrodes 41 to 43.

[0110] In the third embodiment, the multilayer device 1G also has at least one electrode among the multiple planar electrodes 40 and the multiple connecting electrodes 50 having two or more different electrode structures. Therefore, in the multilayer device 1G, multiple types of capacitive components C40, inductive components L50, and capacitive components C20 can be generated. This makes it possible to generate a stopband containing multiple resonance points, thereby broadening the stopband that blocks the passage of high-speed and high-frequency signals.

[0111] [Modification 1 of Embodiment 3] The configuration of the multilayer device 1H according to Modification 1 of Embodiment 3 will be described with reference to Figure 18. In Modification 1 of Embodiment 3, an example in which the multilayer device 1H is a common-mode filter will be described.

[0112] Figure 18 is a schematic perspective view showing a multilayer device 1H according to a modified example 1 of Embodiment 3.

[0113] As shown in Figure 18, the multilayer device 1H comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1H also comprises a plurality of signal terminals 61, 62, 63, and 64, and a plurality of ground terminals 71, 72, 73, and 74.

[0114] The configuration of the dielectric 10, ground electrode 30, and ground terminals 71-74 is the same as in Embodiment 3.

[0115] The multiple planar electrodes 40 are composed of two planar electrodes 41 adjacent to each other in the second direction d2, two planar electrodes 42 adjacent to each other in the second direction d2, and two planar electrodes 43 adjacent to each other in the second direction d2. The multiple planar electrodes 41, 42, and 43 are arranged in this order along the first direction d1, that is, along each signal line 20a, 20b.

[0116] The multiple connecting electrodes 50 are composed of two connecting electrodes 51 adjacent to each other in the second direction d2, two connecting electrodes 52 adjacent to each other in the second direction d2, and two connecting electrodes 53 adjacent to each other in the second direction d2. The multiple connecting electrodes 51, 52, and 53 are arranged along the first direction d1 so as to correspond one-to-one with the multiple planar electrodes 41 to 43.

[0117] In the multilayer device 1H of the modified example 1 of Embodiment 3, at least one of the electrodes of the plurality of planar electrodes 40 and plurality of connecting electrodes 50 has two or more different electrode structures. Therefore, in the multilayer device 1H, multiple types of capacitive components C40, inductive components L50 and capacitive components C20 can be generated. This makes it possible to generate a stopband that includes multiple resonance points, and to broaden the stopband that blocks the passage of high-speed and high-frequency signals.

[0118] [Effects, etc.] The effects of the multilayer device 1G having the above configuration will be explained with reference to Figures 19 and 20A to 20C. Here, we show an example where the opposing area between the signal line 20 and the planar electrode 40 is the same, but the results shown below are similar for multilayer device 1G where the opposing areas between the signal line 20 and the planar electrode 40 are different.

[0119] Figure 19 shows the signal line 20, planar electrode 40, and ground electrode 30 of multilayer device 1G. In this multilayer device 1G, a high-speed, high-frequency signal input to port 1 is transmitted through signal line 20a and output from port 2. Similarly, a high-speed, high-frequency signal input to port 3 is transmitted through signal line 20b and output from port 4.

[0120] Figure 20A shows the pass-through characteristics of a differential-mode signal in a multilayer device 1G. The vertical axis of the figure shows the S-parameters (Sdd21). Differential-mode signals are input to ports 1 and 3, respectively, as shown in Figure 19. As shown in Figure 20A, the multilayer device 1G can pass differential-mode signals in the 3GHz to 5GHz range, which will be discussed later.

[0121] Figure 20B shows the pass characteristics of a common-mode signal in a multilayer device 1G. The vertical axis of the figure shows the S-parameter (Scc21). Figure 20B shows the characteristics when a common-phase high-speed, high-frequency signal is input to port 1 and port 3. As shown in Figure 20B, the multilayer device 1G can block the pass-through of signals in the 3GHz to 5GHz range. In other words, the multilayer device 1G is capable of blocking the pass-through of common-mode signals.

[0122] Figure 20C shows the pass-through characteristics of the common-differential conversion signal and the differential-common conversion signal in multilayer device 1G. The vertical axis of the figure shows the S-parameters (Scd21 or Sdc21). As shown in Figure 20C, the insertion loss of both the common-differential conversion signal and the differential-common conversion signal is greater than 20 dB. Therefore, multilayer device 1G is able to suppress the pass-through of both the common-differential conversion signal and the differential-common conversion signal.

[0123] (Embodiment 4) The multilayer device 1i according to Embodiment 4 will be described with reference to Figures 21A to 22. Embodiment 4 describes an example in which the multilayer device 1i is not a printed circuit board, but an electronic component mounted on a printed circuit board.

[0124] Figure 21A is a top view of the multilayer device 1i according to Embodiment 4. Figure 21B is a cross-sectional view of the multilayer device 1i according to Embodiment 4, taken from the line XXIB-XXIB shown in Figure 21A.

[0125] As shown in Figures 21A and 21B, the multilayer device 1i comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. Note that the plurality of signal terminals 61, 62 and the plurality of ground terminals 71 to 74 are not shown in these figures.

[0126] The multilayer device 1i of Embodiment 4 is a surface-mount type electronic component mounted on a printed circuit board. The dimensions of the multilayer device 1i shown in the figure are, for example, 3.2 mm in length, 1.6 mm in width, and 1.0 mm in height. In the above, the length is the dimension in the first direction d1, the width is the dimension in the second direction d2, and the height is the dimension in the third direction d3.

[0127] The dielectric 10 is formed, for example, by stacking multiple dielectric layers. The dielectric 10 is formed from a dielectric material such as low-temperature co-fired ceramics. For example, the relative permittivity of the dielectric 10 is 8.1 and the dielectric loss tangent is 0.02. The number of dielectric layers is 7, and the thickness of each dielectric layer is 0.1 mm.

[0128] The signal line 20 is provided inside the dielectric 10 such that both ends, which are part of the signal line 20, are exposed on the outer surface of the dielectric 10. For example, the width of the signal line 20 is 0.1 mm and the thickness is 0.01 mm. The distance between the signal line 20 and the top surface 17 of the dielectric 10 is 0.5 mm.

[0129] The ground electrode 30 is provided inside the dielectric 10 such that a portion of it is exposed on the outer surface of the dielectric 10. Furthermore, the ground electrode 30 is positioned closer to the bottom surface 16 than the planar electrode 40. For example, the thickness of the ground electrode is 0.01 mm.

[0130] The planar electrode 40 is located inside the dielectric 10 so as to be positioned between the signal line 20 and the ground electrode 30. For example, the gap between the planar electrode 40 and the signal line 20 is 0.05 mm, and the distance between the planar electrode 40 and the ground electrode 30 is 0.43 mm.

[0131] In this example, four planar electrodes 41, 42, 43, and 41 are arranged in this order along the first direction d1, i.e., along the signal line 20. Each planar electrode 41-43 is positioned such that its center aligns with the center line cL of the signal line 20.

[0132] The shape of the planar electrodes 41-43 is rectangular. For example, the size of planar electrode 41 is 0.6 mm x 1.2 mm, the size of planar electrode 42 is 0.5 mm x 1.0 mm, and the size of planar electrode 43 is 0.4 mm x 0.8 mm. Therefore, the facing area of ​​each planar electrode 41-43 relative to the signal line 20 is different. Also, the spacing between planar electrodes 41 and 42 is 0.25 mm, the spacing between planar electrodes 42 and 43 is 0.35 mm, and the spacing between planar electrodes 43 and 41 is 0.3 mm. Therefore, the arrangement pitch of planar electrodes 41, 42, 43, and 41 is different.

[0133] The connecting electrode 50 is a via conductor that connects the multiple planar electrodes 40 and the ground electrode 30, and is provided inside the dielectric 10. The multiple connecting electrodes 51, 52, and 53 are provided so as to correspond one-to-one with the multiple planar electrodes 41 to 43. The connecting electrodes 51 to 53 are formed to penetrate each dielectric layer located between the multiple planar electrodes 40 and the ground electrode 30. For example, the diameter of the connecting electrode 50 is 0.1 mm. The connecting electrode 50 is connected to the corner of the rectangular planar electrode 40. Land electrodes 81 are provided at the interface of the multiple dielectric layers to connect the connecting electrodes 50 provided in each dielectric layer. For example, the diameter of the land electrode 81 is 0.3 mm.

[0134] Figure 22 shows the pass-through characteristics of the multilayer device 1i according to Embodiment 4. The vertical axis of the figure shows the S-parameter (S21). Note that in Figure 22, the signal terminals and ground terminals were omitted during the simulation.

[0135] As shown in Figure 22, the multilayer device 1i of Embodiment 4 has multiple attenuation poles. For example, an attenuation pole is formed at 12.72 GHz by an electrode structure including a planar electrode 41, an attenuation pole is formed at 15.04 GHz by an electrode structure including a planar electrode 42, and an attenuation pole is formed at 19.35 GHz by an electrode structure including a planar electrode 43, with a large insertion loss in each of these multiple attenuation poles.

[0136] Thus, the multilayer device 1i of Embodiment 4, by comprising multiple mushroom structures, is capable of blocking the passage of signals of multiple predetermined frequencies by multiple attenuation poles corresponding to each structure. By arranging each attenuation pole according to desired characteristics, for example, a multilayer device 1i with a wide stopband can be realized.

[0137] (Embodiment 5) The multilayer device 1J according to Embodiment 5 will be described with reference to Figures 23A to 24. In Embodiment 5, we will also describe an example where the multilayer device 1J is not a printed circuit board, but an electronic component mounted on a printed circuit board.

[0138] Figure 23A is a top view of the multilayer device 1J according to Embodiment 5. Figure 23B is a cross-sectional view of the multilayer device 1J according to Embodiment 5, taken from the line XXIIIB-XXIIIB shown in Figure 23A.

[0139] As shown in Figures 23A and 23B, the multilayer device 1J comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 40, and a plurality of connecting electrodes 50. Note that the plurality of signal terminals 61, 62 and the plurality of ground terminals 71-74 are not shown in these figures.

[0140] The multilayer device 1J of Embodiment 5 is a surface-mount type electronic component mounted on a printed circuit board. The dimensions of the multilayer device 1J shown in the figure are, for example, 3.2 mm in length, 1.6 mm in width, and 1.0 mm in height.

[0141] The dielectric 10 is formed, for example, by stacking multiple dielectric layers. The dielectric 10 is formed from a dielectric material such as low-temperature co-fired ceramics. For example, the relative permittivity of the dielectric 10 is 8.1 and the dielectric loss tangent is 0.02. The number of dielectric layers is 6, and the thickness of each dielectric layer is 0.1 mm.

[0142] The signal line 20 is provided inside the dielectric 10 such that both ends, which are part of the signal line 20, are exposed on the outer surface of the dielectric 10. For example, the width of the signal line 20 is 0.1 mm and the thickness is 0.01 mm. The distance between the signal line 20 and the top surface 17 of the dielectric 10 is 0.5 mm.

[0143] The ground electrode 30 is provided inside the dielectric 10 such that a portion of it is exposed on the outer surface of the dielectric 10. In this example, the ground electrode 30 is provided closer to the bottom surface 16 than the planar electrode 40. For example, the thickness of the ground electrode is 0.01 mm.

[0144] The planar electrode 40 is located inside the dielectric 10 so as to be positioned between the signal line 20 and the ground electrode 30. For example, the gap between the planar electrode 40 and the signal line 20 is 0.05 mm, and the distance between the planar electrode 40 and the ground electrode 30 is 0.43 mm.

[0145] In this example, four planar electrodes 40 are arranged along a first direction d1, that is, along the signal line 20. Each planar electrode 40 is positioned such that its center aligns with the centerline cL of the signal line 20.

[0146] The shape of the planar electrodes 40 is rectangular. For example, the size of each planar electrode 40 is 0.6 mm × 1.2 mm. Also, the distance between adjacent planar electrodes 40 in the first direction d1 is 0.2 mm.

[0147] The connecting electrode 50 is a via conductor that connects the multiple planar electrodes 40 and the ground electrode 30, and is provided inside the dielectric 10. The multiple connecting electrodes 50 are provided along a first direction d1 so as to correspond one-to-one with the multiple planar electrodes 40. The connecting electrode 50 is formed to penetrate each dielectric layer located between the multiple planar electrodes 40 and the ground electrode 30. For example, the diameter of the connecting electrode 50 is 0.1 mm. The connecting electrode 50 is connected to the corners of the planar electrodes 40. Land electrodes are provided at the interface of the multiple dielectric layers to connect the connecting electrodes 50 provided in each dielectric layer. For example, the diameter of the land electrode is 0.3 mm.

[0148] Figure 24 shows the pass-through characteristics of the multilayer device 1J according to Embodiment 5. The vertical axis of the figure shows the S-parameter (S21). Note that in Figure 24, the signal terminals and ground terminals were omitted during the simulation.

[0149] As shown in Figure 24, the multilayer device 1J of Embodiment 5 is able to form an attenuation band around 16.3 GHz. Thus, even when the multilayer device 1J is formed to the size of a surface-mount electronic component, an attenuation band can be formed.

[0150] For example, when forming an electrode structure consisting of a signal line 20, a ground electrode 30, a planar electrode 40, and a connecting electrode 50 inside a printed circuit board, it is necessary to make the printed circuit board a multilayer structure. In contrast, instead of forming the electrode structure inside the printed circuit board, as in Embodiment 5, a multilayer device 1J including the electrode structure can be made into an electronic component mounted on the printed circuit board, thereby reducing the number of layers on the printed circuit board on which the multilayer device 1J is mounted. This helps to suppress an increase in the cost of the printed circuit board.

[0151] (Embodiment 6) [Multilayer device configuration] The configuration of the multilayer device 1K according to Embodiment 6 will be described with reference to the figure.

[0152] Figure 25 is an external view of the multilayer device 1K according to Embodiment 6. Figure 26 shows the signal line 20, planar electrodes 41, 42, 43, ground electrode 30, and connecting electrodes 51, 52, 53 of the multilayer device 1K. Figure 27A is a top view of the signal line 20, etc., of the multilayer device 1K. Figure 27B is a cross-sectional view of the multilayer device 1K taken from the line XXVIIB-XXVIIB shown in Figure 27A. Figure 27C is a bottom view of the multilayer device 1K.

[0153] Figure 26 shows the multilayer device 1K with the signal terminals 61 and 62, ground terminals 71, 72, 73, and 74, and dielectric 10 removed. In Figure 27C, the signal lines, planar electrodes, and connecting electrodes are omitted from the illustration.

[0154] The multilayer device 1K shown in Figures 25, 26, and 27A to 27C comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1K also comprises a plurality of signal terminals 61 and 62, and a plurality of ground terminals 71, 72, 73, and 74.

[0155] In the following, some or all of the multiple planar electrodes 41-43 may be referred to as planar electrodes 40, and some or all of the multiple connecting electrodes 51-53 may be referred to as connecting electrodes 50. Also, some or all of the multiple signal terminals 61, 62 may be referred to as signal terminals 60, and some or all of the multiple ground terminals 71-74 may be referred to as ground terminals 70.

[0156] For example, the signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 are formed from a metallic material such as silver or copper. The signal line 20, ground electrode 30, planar electrode 40, and connecting electrode 50 may be formed from the same material or the same composition ratio, or from different materials or different composition ratios.

[0157] The dielectric 10 is formed, for example, by stacking multiple dielectric layers. The dielectric 10 is formed from a dielectric material such as low-temperature co-fired ceramics. In order to miniaturize the multilayer device 1K, it is desirable to use a material with a high relative permittivity as the dielectric 10. The dielectric 10 is provided between the signal line 20, the ground electrode 30, and the planar electrode 40. Furthermore, the dielectric 10 is formed to cover the outer surface of the signal line 20 excluding both end faces, the outer surface of the ground electrode 30 excluding both end faces, and the electrode structure consisting of the planar electrode 40 and the connecting electrode 50.

[0158] The dielectric 10 has a rectangular parallelepiped shape and has a bottom surface 16, a top surface 17 facing away from the bottom surface 16, and a plurality of sides 11, 12, 13, and 14 connecting the bottom surface 16 and the top surface 17. The plurality of sides 11 to 14 include sides 11 and 12 facing away from each other, and sides 13 and 14 perpendicular to both sides 11 and 12. The bottom surface 16 and the top surface 17 are parallel to each other, sides 11 and 12 are parallel to each other, and sides 13 and 14 are parallel to each other. The corner portions (edge ​​portions) where each surface of the dielectric 10 intersect may be rounded.

[0159] Here, the direction in which side 11 and side 12 are facing away from each other is called the first direction d1, the direction in which side 13 and side 14 are facing away from each other is called the second direction d2, and the direction in which the bottom surface 16 and top surface 17 are facing away from each other is called the third direction d3. Furthermore, below, the negative side of the first direction d1 may be referred to as "one side," and the positive side, which is the opposite of the negative side, may be referred to as "the other side."

[0160] The signal line 20 is linear and is provided along a first direction d1. The signal line 20 is provided inside the dielectric 10 such that both ends, which are part of the signal line 20, are exposed to the outer surface (sides 11, 12) of the dielectric 10. The signal line 20 is strip-shaped and is arranged parallel to the planar electrode 40 and the ground electrode 30. When the multilayer device 1K is mounted in an electronic device, high-speed and high-frequency signals are input and output to the signal line 20 via the signal terminal 60.

[0161] The signal terminals 60 are provided on the outer surfaces 11 and 12 of the dielectric 10. One of the two signal terminals 61 and 62, signal terminal 61, is provided on side surface 11, and the other signal terminal 62 is provided on side surface 12. One end of the signal line 20 is connected to one signal terminal 61, and the other end of the signal line 20 is connected to the other signal terminal 62.

[0162] The ground electrode 30 is provided inside the dielectric 10 such that a portion of the ground electrode 30 is exposed on the sides 11 and 12 of the dielectric 10. The ground electrode 30 has rectangular notches 31 at both ends in the first direction d1 so as not to come into contact with the signal terminal 60, and is positioned at a predetermined distance from the signal terminal 60. Furthermore, the ground electrode 30 is positioned at a predetermined distance from the sides 13 and 14 so as not to be exposed on the sides 13 and 14. Note that the ground electrode 30 may be provided on the bottom surface 16 of the dielectric 10 instead of inside the dielectric 10.

[0163] Furthermore, the ground electrode 30 may not be a solid pattern, but rather a structure with an opening pattern, such as a mesh structure. By making the ground electrode 30 a mesh structure, the dielectric 10s can be joined together to increase the bonding strength.

[0164] When the multilayer device 1K is mounted on an electronic device, the ground electrode 30 is set to ground potential via the ground terminal 70.

[0165] The ground terminal 70 is provided on the outer surfaces 11 and 12 of the dielectric 10. Of the four ground terminals 71 to 74, one set of ground terminals 71 and 73 is provided on side surface 11, and the other set of ground terminals 72 and 74 is provided on side surface 12. One end of the ground electrode 30 is connected to one set of ground terminals 71 and 73, and the other end of the ground electrode 30 is connected to the other set of ground terminals 72 and 74. One set of ground terminals 71 and 73 is located on either side of one signal terminal 61 in the second direction d2. The other set of ground terminals 72 and 74 is located on either side of the other signal terminal 62 in the second direction d2. In other words, one signal terminal 61 is located between the two ground terminals 71 and 73, and the other signal terminal 62 is located between the two ground terminals 72 and 74.

[0166] The number of ground terminals 70 is not limited to four; there may be two. One ground terminal 70 may be provided on each of the sides 11 and 12, or on each of the sides 13 and 14 of the dielectric 10. For example, one ground terminal 70 may be provided on each of the sides 11 and 12. In this case, it is desirable to arrange the ground terminals 70 diagonally so that the mounting orientation does not need to be considered. Furthermore, the ground terminals 70 may be provided not only on sides 11 and 12, but also on sides 13 and 14. Alternatively, the ground terminals 70 may be provided only on sides 13 and 14.

[0167] The planar electrode 40 is provided inside the dielectric 10 so as to be located between the signal line 20 and the ground electrode 30 in the third direction d3. The planar electrode 40 is arranged parallel to the signal line 20 and the ground electrode 30. The gap between the planar electrode 40 and the signal line 20 is smaller than the gap between the ground electrode 30 and the signal line 20. In this embodiment, the gap between the planar electrode 40 and the signal line 20 is, for example, 0.1 to 0.5 times the gap between the ground electrode 30 and the signal line 20, but the size of this gap is appropriately set according to the stopband required for the multilayer device 1K. The multiple planar electrodes 40 are planar electrodes having a rectangular shape. Note that the shape of the planar electrode 40 is not limited to a rectangle, but may be a square, polygon, circle, or ellipse. The multiple planar electrodes 41, 42, and 43 are arranged at equal intervals in this order along the first direction d1. Each planar electrode 41, 42, and 43 has the same shape and size.

[0168] The connecting electrode 50 is a via conductor that connects the multiple planar electrodes 40 and the ground electrode 30, and is provided inside the dielectric 10. The connecting electrode 50 is formed to penetrate the dielectric 10 located between the multiple planar electrodes 40 and the ground electrode 30. The connecting electrode 50 is columnar, and its diameter is greater than the thickness of the planar electrodes 40. The length of the connecting electrode 50 is smaller than the gap between the ground electrode 30 and the signal line 20. In this multilayer device 1K, changing the length of the connecting electrode 50 also changes the gap between the planar electrodes 40 and the signal line 20.

[0169] Multiple connecting electrodes 51, 52, and 53 are arranged at equal intervals in this order along the first direction d1. Each connecting electrode 51, 52, and 53 has the same shape and size. Each connecting electrode 51 to 53 is provided along the first direction d1 so as to correspond one-to-one with each planar electrode 41 to 43. Specifically, connecting electrode 51 is provided to connect the planar electrode 41 and the ground electrode 30, connecting electrode 52 is provided to connect the planar electrode 42 and the ground electrode 30, and connecting electrode 53 is provided to connect the planar electrode 43 and the ground electrode 30.

[0170] When viewed from a direction perpendicular to the planar electrode 40, the connecting electrodes 51, 52, and 53 do not overlap the signal line 20, but overlap the outer edge of the planar electrode 40 and the ground electrode 30. Each connecting electrode 51 to 53 is connected to the corner of the outer edge of each planar electrode 41 to 43.

[0171] For example, when forming an electrode structure consisting of a signal line 20, a ground electrode 30, a planar electrode 40, and a connecting electrode 50 inside a printed circuit board, it is necessary to make the printed circuit board a multilayer structure.

[0172] In contrast, in Embodiment 6, by making the multilayer device 1K, which includes the electrode structure, an electronic component mounted on a printed circuit board, the number of layers on the printed circuit board on which the multilayer device 1K is mounted can be reduced. This helps to suppress an increase in the cost of the printed circuit board.

[0173] Furthermore, while conventional functional substrates can block the passage of signals at specific frequencies among high-speed and high-frequency signals, it is difficult to form a stopband that blocks the passage of high-speed and high-frequency signals according to the requirements of multilayer devices.

[0174] In contrast, the connecting electrode 50 of the multilayer device 1K in Embodiment 6, when viewed from a direction perpendicular to the planar electrode 40, does not overlap with the signal line 20, but overlaps with the planar electrode 40 and the ground electrode 30. As a result, the connecting electrode 50 is positioned at the end of the planar electrode 40. Therefore, the total length of the electrode structure consisting of the connecting electrode 50 and the planar electrode 40 can be increased, and the inductance value of the electrode structure can be changed. By changing the inductance value, the value of the inductive component L50 can be changed, and thus the frequency of the stopband of the multilayer device 1K can be changed. This makes it possible to form a stopband according to the required specifications for the multilayer device 1K.

[0175] (Embodiment 7) A multilayer device 1L according to Embodiment 7 will be described.

[0176] Figure 28 shows the signal line 20, planar electrode 40, ground electrode 30, and connecting electrode 50 of the multilayer device 1L according to Embodiment 7. Figure 28 shows the multilayer device 1L with the signal terminals 61, 62, ground terminals 71, 72, 73, 74 and dielectric 10 removed.

[0177] The multilayer device 1L shown in Figure 28 comprises a dielectric 10, a signal line 20, a ground electrode 30, a plurality of planar electrodes 41, 42, and 43, and a plurality of connecting electrodes 51, 52, and 53. The multilayer device 1L also comprises a plurality of signal terminals 61 and 62, and a plurality of ground terminals 71, 72, 73, and 74.

[0178] The dielectric 10, ground electrode 30, planar electrodes 41, 42 and 43, and connecting electrodes 51, 52 and 53 in Embodiment 7 are the same as in Embodiment 6. Also, the signal terminals 61 and 62 and ground terminals 71, 72, 73 and 74 in Embodiment 7 are the same as in Embodiment 6.

[0179] The signal line 20 is straight and is provided along the first direction d1. In Embodiment 7, the signal line 20 is the same length as the second direction d2 of the planar electrode 40 when viewed from a direction perpendicular to the planar electrode 40, i.e., from the third direction d3. The statement that the width of the signal line 20 is the same as the length of the second direction d2 of the planar electrode 40 means that the width of the signal line 20 is 0.9 times or more and less than 1.1 times the length of the second direction d2 of the planar electrode 40.

[0180] The signal line 20 is provided inside the dielectric 10 such that both ends, which are part of the signal line 20, are exposed to the outer surface (sides 11, 12) of the dielectric 10. The signal line 20 has notches at the corners of both ends in the first direction d1 so as not to come into contact with the ground terminal 70, and is positioned at a predetermined distance from the ground terminal 70. The central part of the signal line 20, excluding the ends, is strip-shaped and is positioned parallel to the planar electrode 40 and the ground electrode 30.

[0181] Conventional functional substrates can block the passage of signals at specific frequencies among high-speed and high-frequency signals, but it is difficult to form a stopband that blocks the passage of high-speed and high-frequency signals according to the requirements of multilayer devices.

[0182] In contrast, the signal line 20 of the multilayer device 1L according to Embodiment 7 has the same length as the second direction d2 of the planar electrode 40 when viewed from the direction perpendicular to the planar electrode 40, i.e., the third direction d3. This allows for an increase in the area of ​​contact between the signal line 20 and the planar electrode 40. By changing the contact area, the value of the capacitive component C40 can be changed, and thus the frequency of the stopband of the multilayer device 1L can be changed. This makes it possible to form a stopband according to the required specifications for the multilayer device 1L.

[0183] (summary) The multilayer device 1A (or 1K, 1L) according to this embodiment comprises a dielectric 10, a signal line 20 provided inside the dielectric 10 such that a portion of it is exposed to the outer surface of the dielectric 10, a ground electrode 30 provided inside or on the outer surface of the dielectric 10 such that at least a portion of it is exposed to the outer surface of the dielectric 10, a plurality of planar electrodes 40 provided inside the dielectric 10 and arranged parallel to the ground electrode 30 and along a first direction d1, a plurality of connecting electrodes 50 provided inside the dielectric 10 and connecting the plurality of planar electrodes 40 and the ground electrode 30, a plurality of signal terminals 60 provided on the outer surface of the dielectric 10 and connected to the signal line 20, and a plurality of ground terminals 70 provided on the outer surface of the dielectric 10 and connected to the ground electrode 30.

[0184] For example, when forming an electrode structure consisting of a signal line 20, a ground electrode 30, a planar electrode 40, and a connecting electrode 50 inside a printed circuit board, the printed circuit board needs to have a multilayer structure. In contrast, by making the multilayer device 1A (or 1K, 1L) containing the electrode structure an electronic component mounted on the printed circuit board, the number of layers on the printed circuit board on which the multilayer device 1A (or 1K, 1L) is mounted can be reduced. This helps to suppress an increase in the cost of the printed circuit board.

[0185] Furthermore, at least one of the multiple planar electrodes 40 and the multiple connecting electrodes 50 may have two or more different electrode structures.

[0186] Thus, by having two or more different electrode structures in the multilayer device 1A, multiple types of capacitive components C40, inductive components L50, and capacitive components C20 can be generated in the multilayer device 1A. This makes it possible to generate a stopband containing multiple resonance points, thereby broadening the stopband that blocks the passage of signals. Furthermore, since the frequency of the stopband of the multilayer device 1A can be changed, it is possible to form the stopband according to the required specifications of the multilayer device 1A.

[0187] Furthermore, the connecting electrode 50 is a via conductor and may overlap the outer edge of the planar electrode 40 when viewed from a direction perpendicular to the planar electrode 40.

[0188] According to this, the connecting electrode 50 is positioned at the outer edge of the planar electrode 40. Therefore, the overall length of the electrode structure consisting of the connecting electrode 50 and the planar electrode 40 can be increased, and the inductance value of the electrode structure can be changed. By changing the inductance value, the value of the inductive component L50 can be changed, and thus the frequency of the stopband of the multilayer device 1K can be changed. This makes it possible to form a stopband according to the required specifications of the multilayer device 1K.

[0189] Furthermore, when viewed from a direction perpendicular to the planar electrode 40, the width of the signal line 20 may be the same as the length of the second direction d2 perpendicular to the first direction d1 of the planar electrode 40.

[0190] According to this, the contact area between the signal line 20 and the planar electrode 40 can be increased. By changing the contact area, the value of the capacitive component C40 can be changed, and thus the frequency of the stopband of the multilayer device 1L can be changed. This makes it possible to form a stopband according to the required specifications of the multilayer device 1L.

[0191] The multilayer device 1A according to this embodiment includes a signal line 20 for transmitting signals, a ground electrode 30 set to ground potential, a plurality of planar electrodes 40 arranged parallel to the ground electrode 30 and along a first direction d1, a dielectric 10 provided between the signal line 20, the plurality of planar electrodes 40 and the ground electrode 30, and a plurality of connecting electrodes 50 located between the plurality of planar electrodes 40 and the ground electrode 30 and connecting the plurality of planar electrodes 40 and the ground electrode 30. At least one of the electrodes of the plurality of planar electrodes 40 and the plurality of connecting electrodes 50 has two or more different electrode structures.

[0192] Thus, by having two or more different electrode structures in the multilayer device 1A, multiple types of capacitive components C40, inductive components L50, and capacitive components C20 can be generated in the multilayer device 1A. This makes it possible to generate a stopband containing multiple resonance points, thereby broadening the stopband that blocks the passage of signals.

[0193] Furthermore, the multiple planar electrodes 40 may have two or more different structures with respect to at least one of the opposing area between the signal line 20 and the planar electrodes 40, and the arrangement pitch of the multiple planar electrodes 40 arranged along the first direction d1.

[0194] For example, by having two or more structures with different opposing areas between the signal line 20 and the planar electrode 40, it is possible to generate two or more capacitive components C40 based on the signal line 20 and the planar electrode 40. This makes it possible to generate a stopband containing multiple resonance points and broaden the bandwidth of the stopband. Furthermore, by having two or more structures with different arrangement pitches of the planar electrode 40, it is possible to generate two or more capacitive components C20 based on the signal line 20 and the ground electrode 30. This makes it possible to generate a stopband containing multiple resonance points and broaden the bandwidth of the stopband.

[0195] Furthermore, the multiple connecting electrodes 50 may have two or more different structures with respect to at least one of the cross-sectional area of ​​the multiple connecting electrodes 50 and the length of the multiple connecting electrodes 50.

[0196] For example, by having two or more structures with different cross-sectional areas for multiple connecting electrodes 50, two or more inductive components L50 can be generated by the connecting electrodes 50. This makes it possible to generate a stopband containing multiple resonance points and broaden the bandwidth of the stopband. Furthermore, by having two or more structures with different lengths for multiple connecting electrodes 50, two or more inductive components L50 can be generated by the connecting electrodes 50. Also, by changing the length of the connecting electrodes 50, the gap between the signal line 20 and the planar electrode 40 changes, so two or more capacitive components C40 based on the signal line 20 and the planar electrode 40 can be generated. This makes it possible to generate a stopband containing multiple resonance points and broaden the bandwidth of the stopband.

[0197] Furthermore, the multilayer devices 1C, 1D, 1E, or 1F may comprise multiple sets of two or more structures.

[0198] According to this, the number of resonance points in the multilayer device 1C, 1D, 1E, or 1F can be further increased. This allows for a wider stopband that blocks the passage of signals.

[0199] Furthermore, the multilayer device 1F may have a multilayer structure in which multiple stacked laminates, each consisting of a signal line 20, a ground electrode 30, multiple planar electrodes 40, and multiple connecting electrodes 50, are stacked.

[0200] By stacking multiple layers as described above, the number of resonance points in the multilayer device 1F can be further increased. This allows for a wider stopband that blocks the passage of signals. Additionally, by making the multilayer device 1F a multilayer structure, the area of ​​the multilayer device 1F can be reduced.

[0201] Furthermore, the signal line 20 may be composed of two parallel lines provided in the dielectric 10.

[0202] According to this, it becomes possible to use multilayer devices 1G and 1H as common-mode filters.

[0203] Furthermore, the two parallel lines may be differential lines through which differential signals are transmitted.

[0204] According to this, it is possible to provide multilayer devices 1G and 1H that have the function of a common mode filter.

[0205] Furthermore, at least one of the multiple planar electrodes 40 (e.g., 41) may have a different surface area in contact with the signal line 20 than the other planar electrodes (e.g., 42).

[0206] According to this, it is possible to generate two or more capacitive components C40 based on the opposing area between the signal line 20 and the planar electrode 40. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0207] Furthermore, the distance between the centers of one pair of adjacent planar electrodes (e.g., 41, 42) along the first direction d1 may be different from the distance between the centers of another pair of planar electrodes (e.g., 42, 43) which is a different combination from the first pair.

[0208] According to this, the lengths of the signal lines 20 corresponding to a pair of planar electrodes 40 and connecting electrodes 50 are different, making it possible to generate two or more capacitive components C20 based on the signal lines 20 and the ground electrode 30. This makes it possible to generate a stopband containing multiple resonance points, thereby widening the bandwidth of the stopband.

[0209] Furthermore, at least one of the multiple connecting electrodes 50 (e.g., 51) may have a different cross-sectional area from the other connecting electrodes (e.g., 52) that are different from the one connecting electrode.

[0210] According to this, two or more inductive components L50 can be generated by the connecting electrode 50. This makes it possible to generate a stopband containing multiple resonance points, thereby broadening the bandwidth of the stopband.

[0211] Furthermore, at least one of the multiple connecting electrodes 50 (e.g., 51) may have a different length from the other connecting electrodes (e.g., 52) that are different from the one connecting electrode.

[0212] According to this, two or more inductive components L50 can be generated by the connecting electrode 50. Furthermore, by changing the length of the connecting electrode 50, the gap between the signal line 20 and the planar electrode 40 changes, so two or more capacitive components C40 can be generated based on the signal line 20 and the planar electrode 40. This makes it possible to generate a stopband containing multiple resonance points and to broaden the bandwidth of the stopband.

[0213] Furthermore, multiple planar electrodes 40 may be arranged between the signal line 20 and the ground electrode 30.

[0214] According to this, the length of the connecting electrode 50 can be shortened compared to when the planar electrode 40 is placed on the opposite side of the ground electrode 30 when viewed from the signal line 20. As a result, the inductive component L50 of the connecting electrode 50 can be reduced. This makes it possible to adjust the position of the resonance point of the multilayer device 1A and broaden the stopband.

[0215] Furthermore, the planar electrode 40 may be positioned on the opposite side of the ground electrode 30 when viewed from the signal line 20.

[0216] According to this, the length of the connecting electrode 50 can be increased compared to the case where the planar electrode 40 is placed between the signal line 20 and the ground electrode 30. Therefore, the inductive component L50 of the connecting electrode 50 can be increased. This makes it possible to adjust the position of the resonance point of the multilayer device 1B and broaden the stopband.

[0217] (Other embodiments, etc.) Although the embodiments and various modifications of the multilayer devices etc. described above have been explained, the disclosure is not limited to the embodiments and various modifications described above. Without departing from the spirit of the disclosure, various modifications that a person skilled in the art could conceive of the embodiments and various modifications, as well as other forms constructed by combining some of the components of the embodiments and various modifications, are also included in the scope of the disclosure.

[0218] For example, Embodiment 1 shows an example in which multiple planar electrodes 41, 42, and 43 are arranged in this order along the first direction d1, but it is not limited to this. The multiple planar electrodes 41 to 43 may be arranged in the order of planar electrodes 41, 43, and 42. In other words, the multiple planar electrodes 41, 42, and 43 may be arranged in any order, for example, in an order selected from six possible permutations.

[0219] For example, in another example of Embodiment 1, a plurality of connecting electrodes 51, 52, and 53 are shown arranged in this order along the first direction d1, but the invention is not limited to this. The plurality of connecting electrodes 51 to 53 may be arranged in the order of connecting electrodes 51, 53, and 52. In other words, the plurality of connecting electrodes 51, 52, and 53 may be arranged in any order, for example, in an order selected from six possible permutations.

[0220] For example, Embodiment 1 shows an example in which three planar electrodes 41-43 and three connecting electrodes 51-53 are arranged along the first direction d1, but it is not limited to this. The number of electrode structures composed of planar electrodes and connecting electrodes may be two or four or more. [Industrial applicability]

[0221] The multilayer devices described herein are useful as multilayer devices used in various electronic devices and communication systems. [Explanation of Symbols]

[0222] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1i, 1J, 1K, 1L multilayer device 10 Dielectrics 11, 12, 13, 14 Side view 16. Base 17 Top surface 20, 20a, 20b signal line 30 Ground electrode 40, 41, 42, 43 Planar electrode 50, 51, 52, 53 Connecting electrodes Signal terminals 60, 61, 62, 63, 64 70, 71, 72, 73, 74 Ground terminals 81 Land electrode cL center line d1 1st direction d2 2nd direction d3 Third direction p1, p2 array pitch

Claims

1. Dielectrics and A signal line is provided inside the dielectric such that a portion of it is exposed on the outer surface of the dielectric, A ground electrode provided inside or on the outer surface of the dielectric, such that at least a portion of it is exposed on the outer surface of the dielectric, A plurality of planar electrodes are provided inside the dielectric, and are arranged parallel to the ground electrode and along the first direction, A plurality of connecting electrodes are provided inside the dielectric, connecting the plurality of planar electrodes and the ground electrode, A plurality of signal terminals provided on the outer surface of the dielectric and connected to the signal line, A plurality of ground terminals provided on the outer surface of the dielectric and connected to the ground electrode, Equipped with, The signal line is composed of two parallel lines provided in the dielectric, The two parallel lines mentioned above are differential lines through which differential signals are transmitted. Multilayer devices.

2. At least one of the plurality of planar electrodes and the plurality of connecting electrodes has two or more different electrode structures. The multilayer device according to claim 1.

3. The connecting electrode is a via conductor and, when viewed from a direction perpendicular to the planar electrode, overlaps the outer peripheral edge of the planar electrode. The multilayer device according to claim 1.

4. When viewed from a direction perpendicular to the planar electrode, the width of the signal line is the same as the length of the planar electrode in the second direction perpendicular to the first direction. The multilayer device according to claim 1.

5. A signal line that transmits signals, A ground electrode set to ground potential, A plurality of planar electrodes arranged parallel to the ground electrode and along the first direction, A dielectric is provided between the signal line, the plurality of planar electrodes, and the ground electrode, A plurality of connecting electrodes are located between the plurality of planar electrodes and the ground electrode, and connect the plurality of planar electrodes and the ground electrode, Equipped with, The signal line is composed of two parallel lines provided in the dielectric, The two parallel lines mentioned above are differential lines through which differential signals are transmitted. At least one of the plurality of planar electrodes and the plurality of connecting electrodes has two or more different electrode structures. Multilayer devices.

6. The plurality of planar electrodes have at least two different structures with respect to at least one of the area facing the signal line and the planar electrodes, and the arrangement pitch of the plurality of planar electrodes arranged along the first direction. The multilayer device according to claim 5.

7. The plurality of connecting electrodes have two or more different structures with respect to at least one of the cross-sectional area of ​​the plurality of connecting electrodes and the length of the plurality of connecting electrodes. The multilayer device according to claim 5.

8. The system comprises multiple sets of two or more different structures. The multilayer device according to claim 6.

9. The structure has a multilayer structure in which multiple laminates, each consisting of the signal line, the ground electrode, the plurality of planar electrodes, and the plurality of connecting electrodes, are stacked. A multilayer device according to any one of claims 1 to 8.

10. At least one of the plurality of planar electrodes has a different area of ​​contact between the signal line and the planar electrode compared to the other planar electrodes. A multilayer device according to any one of claims 1 to 8.

11. The distance between the centers of one adjacent pair of planar electrodes along the first direction is different from the distance between the centers of another pair of planar electrodes that are a different combination from the first pair. A multilayer device according to any one of claims 1 to 8.

12. At least one of the plurality of connecting electrodes has a different cross-sectional area from the other connecting electrodes. A multilayer device according to any one of claims 1 to 8.

13. At least one of the plurality of connecting electrodes has a different length from the other connecting electrodes. A multilayer device according to any one of claims 1 to 8.

14. The plurality of planar electrodes are positioned between the signal line and the ground electrode. A multilayer device according to any one of claims 1 to 8.

15. The plurality of planar electrodes are positioned on the opposite side of the ground electrode when viewed from the signal line. A multilayer device according to any one of claims 1 to 8.

Citation Information

Patent Citations

  • Antenna apparatus

    JP2009135797A

  • EBG structure, semiconductor device, and circuit board

    JP2015061258A

  • Circuit and method for broadband switching noise suppression in multilayer printed circuit boards using localized lattice structures

    US20050205292A1

  • Electromagnetic bandgap checkerboard designs for radar cross section reduction

    US20180212331A1

  • Broadband electromagnetic band-gap (EBG) structure

    US9407011B2