Reconfigurable reflect array structure and control circuit having a reconfigurable reflect array structure

Abstract

To provide a reconfigurable reflect array structure.SOLUTION: A reconfigurable reflect array structure includes: a phase shift switching diode; and a metal circuit including a first metal member coupled to one end of the phase shift switching diode and a second metal member coupled to the other end of the phase shift switching diode. One of the first metal member and the second metal member includes a first radiation unit and a second radiation unit. The first radiation unit is located between the phase shift switching diode and the second radiation unit and has a first length. The second radiation unit has a second length different from the first length. Therefore, the reconfigurable reflect array structure has a dumbbell shape or a double-ring shape, characteristics of a wide band and a wide scanning range, and a simple structure, is low in cost and loss, and is very suitable for application to wireless mobile communication.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a reflectarray structure and a control circuit having a reflectarray structure, and particularly to a reconfigurable reflectarray structure and a control circuit having a reconfigurable reflectarray structure.

Background Art

[0002] In fifth-generation (5G) mobile communication applications, the utilization efficiency of radio wave spectra and space becomes one of the two important issues. Particularly regarding frequency, millimeter waves are the necessary development direction. In conventional technologies, it is often common to use the method of increasing the number of base stations or amplifiers for radio wave dead zones, dark areas, or weak signal regions. Compared with the frequency bands used in current wireless communications, the propagation distance and influence range of electromagnetic waves are significantly reduced. When comparing 28 GHz and 2.4 GHz, at the same signal strength, the transmission distance is reduced by more than 10 times, and the spatial loss becomes 100 times.

[0003] Currently, the most notable research topic is a multi-antenna system that increases the number of antennas to 10, and further to 100 - 1000. Therefore, issues such as the development, installation, integration, and measurement of millimeter-wave circuits and antennas are very important. However, although the development of millimeter-wave systems is important, completely relying on the placement of base stations or amplifiers will result in a large-scale project that requires huge costs and a large amount of manpower when facing the placement. Needless to say, the subsequent maintenance project is also a huge task. As can be seen from the above, currently, the market lacks a reconfigurable reflectarray structure and a control circuit having a reconfigurable reflectarray structure that are simple, lightweight, low-cost, low-power-consuming, and easy to control. Therefore, the related industries are all searching for solutions.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Therefore, the object of the present invention is to provide a reconfigurable reflect array structure and a control circuit having a reconfigurable reflect array structure that utilize a combination of phase-shift switching diodes and metal circuits to form a dumbbell shape or double ring, possesses broadband and wide scanning range characteristics, has a simple structure, low cost, low loss, and is suitable for application in wireless mobile communications. Furthermore, the control circuit having a reconfigurable reflect array structure is integrated using readily available elements and has the characteristics of stable bias voltage, DC link detection, and low power consumption. Thus, the present invention can solve the problem that known base station or amplifier placement techniques require enormous costs and a large amount of manpower. [Means for solving the problem]

[0005] According to one embodiment of the structural aspects of the present invention, a metal circuit comprising a phase-shift switching (P-Intrinsic-N; PIN) diode, a first metal member coupled to one end of the phase-shift switching diode, and a second metal member coupled to the other end of the phase-shift switching diode is provided, wherein one of the first and second metal members includes a first radiating portion and a second radiating portion, the first radiating portion being located between the phase-shift switching diode and the second radiating portion and having a first length, and the second radiating portion having a second length different from the first length.

[0006] As a result, the reconfigurable reflect array structure of the present invention utilizes a combination of phase-shift switching diodes and metal circuits to form a dumbbell shape, possesses broadband and wide scanning range characteristics, has a simple structure, is low-cost, has low loss, and is highly suitable for applications in wireless mobile communications.

[0007] In another embodiment of the above-described model, the first length is greater than the second length.

[0008] In another embodiment of the above embodiment, the other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion being located between the phase-shift switching diode and the fourth radiating portion and having a third length, and the fourth radiating portion having a fourth length different from the third length.

[0009] In another embodiment of the above embodiment, the third length of the third radiating portion is equal to the first length of the first radiating portion, and the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion.

[0010] In another embodiment of the above-described embodiment, the third length is greater than the fourth length so that the phase-shift switching diode and the metal circuit have a dumbbell shape.

[0011] In another embodiment of the above-described embodiment, the fourth radiating portion is provided with a semicircular or arc-shaped protrusion that extends away from the phase-shift switching diode.

[0012] According to another embodiment of the structural aspects of the present invention, a metal circuit comprising a phase-shift switching (P-Intrinsic-N; PIN) diode, a first metal member electrically connected to one end of the phase-shift switching diode, and a second metal member electrically connected to the other end of the phase-shift switching diode is provided, wherein one of the first and second metal members includes a first radiating portion and a second radiating portion, the first radiating portion being located between the phase-shift switching diode and the second radiating portion and having a first length and being annular, and the second radiating portion having a second length different from the first length, is provided as a reconfigurable reflectarray (RRA) structure.

[0013] As a result, the reconfigurable reflect array structure of the present invention utilizes a combination of phase-shift switching diodes and metal circuits to form a double ring, possessing broadband and wide scanning range characteristics, and is simple in structure, low in cost and loss, making it highly suitable for applications in wireless mobile communications.

[0014] In another embodiment of the above-described model, the first length is smaller than the second length.

[0015] In another embodiment of the above-described model, the second radiating portion is annular in shape, surrounding the outer circumference of the first radiating portion, and the first radiating portion is spaced at least one unit apart from the second radiating portion.

[0016] In another embodiment of the above-described embodiment, the first radiating portion surrounds the outer circumference of the phase-shift switching diode and the other of the first and second metal members.

[0017] In another embodiment of the above-described embodiment, the reconfigurable reflect array structure further comprises a colloid covering a portion of the phase-shift switching diodes and metal circuits.

[0018] In another embodiment of the above-described model, the first radial portion may be rectangular, circular, or elliptical, and the second radial portion may be rectangular or arc-shaped.

[0019] According to yet another embodiment of the structural aspects of the present invention, a control circuit having a Reconfigurable ReflectArray (RRA) structure is provided, comprising: a phase-shift switching (P-Intrinsic-N; PIN) diode; a first metal member coupled to one end of the phase-shift switching diode; and a second metal member coupled to the other end of the phase-shift switching diode, wherein one of the first and second metal members includes a first radiating portion and a second radiating portion, the first radiating portion being located between the phase-shift switching diode and the second radiating portion and having a first length, and the second radiating portion having a second length different from the first length; and a control unit connected to the Reconfigurable ReflectArray structure and for controlling the conduction of the phase-shift switching diode.

[0020] As a result, the control circuit having a reconfigurable reflect array structure of the present invention is integrated using readily available elements and has the characteristics of stable bias voltage, DC link detection, and low power consumption.

[0021] In another embodiment of the above embodiment, the control unit includes a light-emitting diode (LED), a bipolar junction transistor (BJT) connected to a reconfigurable reflect array structure, a resistor unit connected to the light-emitting diode and the bipolar junction transistor, and a shift register connected to the resistor unit, wherein the shift register controls the conduction of the phase-shift switching diode by means of the resistor unit and the bipolar junction transistor, and controls the conduction of the light-emitting diode by means of the resistor unit.

[0022] In another embodiment of the above-described model, the first length is greater than the second length.

[0023] In another embodiment of the above embodiment, the other of the first and second metal members includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase-shift switching diode and the fourth radiating portion, the third radiating portion has a third length, and the fourth radiating portion has a fourth length, the third length of the third radiating portion is equal to the first length of the first radiating portion, the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion, and the third length is greater than the fourth length such that the phase-shift switching diode and the metal circuit have a dumbbell shape.

[0024] In another embodiment of the above-described model, the second radiating portion is annular in shape, surrounding the outer circumference of the first radiating portion, and the first radiating portion is spaced at least one unit apart from the second radiating portion.

[0025] In another embodiment of the above-described embodiment, the first radiating portion surrounds the outer circumference of the phase-shift switching diode and the other of the first and second metal members. [Brief explanation of the drawing]

[0026] [Figure 1] Perspective schematic diagram of a reconfigurable reflectarray structure according to the first embodiment of the present invention. [Figure 2] Schematic diagram of the phase shift switching diode and metal circuit of the reconfigurable reflectarray structure of FIG. 1. [Figure 3] Schematic diagram of the high-frequency choke of the reconfigurable reflectarray structure of FIG. 1. [Figure 4] Schematic diagram of the relationship between the phase and frequency of the reconfigurable reflectarray structure of FIG. 1. <( [Figure 5] Schematic diagram of the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 1. [Figure 6A] Schematic diagram of a reconfigurable reflectarray structure according to the second embodiment of the present invention. [Figure 6B] Schematic diagram of the relationship between the phase and frequency of the reconfigurable reflectarray structure of FIG. 6A. [Figure 6C] Schematic diagram of the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 6A. [Figure 7A] Perspective schematic diagram of a reconfigurable reflectarray structure according to the third embodiment of the present invention. [Figure 7B] Planar schematic diagram of the reconfigurable reflectarray structure of FIG. 7A. [Figure 7C] Schematic diagram of the relationship between the phase and frequency of the reconfigurable reflectarray structure of FIG. 7A. [Figure 7D] Schematic diagram of the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 7A. [Figure 8] Schematic diagram of a control circuit having a reconfigurable reflectarray structure according to the fourth embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0027] Several embodiments of the present invention will be described below with reference to the drawings. For clarity, many practical details will be described in conjunction with the following description. However, it should be understood that these practical details are not intended to limit the present invention. In other words, in some embodiments of the present invention, these practical details are not necessary. Also, for the sake of simplification of the drawings, some known and commonly used structures and elements are shown simply and schematically in the drawings, and overlapping elements may be represented by the same number.

[0028] Furthermore, in this specification, "connected" of one element (or unit or module, etc.) to another element may mean that the element is directly connected to the other element, or that the element is indirectly connected to the other element, that is, that another element is interposed between the element and the other element. When it is explicitly stated that an element is "directly connected" to another element, it is indicated that no other element is interposed between the element and the other element. The terms first, second, and third, etc., are merely for describing different elements and do not limit the elements themselves, so the first element can be read as the second element. Also, the combinations of elements / units / circuits in this specification are not common, ordinary, or known combinations in the art, and whether or not the combination relationship is easily understood by a person skilled in the art cannot be determined by whether or not the elements / units / circuits themselves are publicly known.

[0029] Please refer to Figure 1. Figure 1 shows a schematic perspective view of a reconfigurable reflectarray (RRA) structure 100 according to a first embodiment of the present invention. The reconfigurable reflectarray structure 100 is formed by stacking multiple layers and comprises a radiating layer ML1, a grounding layer ML2, a high-frequency suppression layer ML3, and a DC bias layer ML4. The radiating layer ML1 includes a phase-shift switching (P-Intrinsic-N; PIN) diode 200 and a metal circuit 300. The phase-shift switching diode 200 and the metal circuit 300 are connected to each other. The metal circuit 300 includes a first metal member 310 and a second metal member 320. The first metal member 310 is coupled to one end of the phase-shift switching diode 200. The second metal member 320 is coupled to the other end of the phase-shift switching diode 200. The grounding layer ML2 is connected to the ground voltage (GND). The high-frequency suppression layer ML3 includes a radio frequency choke 400, which is used to suppress high-frequency signals. The DC bias layer ML4 may be a glass fiber substrate (FR4). The feed voltage Vc is transmitted through the radio frequency choke 400 to the phase-shift switching diode 200 and the metal circuit 300 to generate a DC current I, which further enables the reconfigurable reflect array structure 100 to operate normally on 5G applications running in the n257 frequency band (26.5 GHz to 29.5 GHz). The multilayer structure is, from top to bottom, a radiating layer ML1, a grounding layer ML2, a high-frequency suppression layer ML3, and a DC bias layer ML4. Thus, the reconfigurable reflect array structure 100 of the present invention has broadband and wide scanning range characteristics, is simple in structure, low in cost and loss, and is very suitable for wireless mobile communication applications.

[0030] Please refer to Figures 1, 2, and 3. Figure 2 shows a schematic diagram of the phase-shift switching diode 200 and metal circuit 300 of the reconfigurable reflect array structure 100 of Figure 1, and Figure 3 shows a schematic diagram of the high-frequency choke 400 of the reconfigurable reflect array structure 100 of Figure 1. As shown in the drawings, the metal circuit 300 corresponds to the high-frequency choke 400 above and below, and the first metal member 310 of the metal circuit 300 is electrically connected to the high-frequency choke 400.

[0031] The first metal member 310 of the metal circuit 300 (either the first metal member 310 or the second metal member 320) includes a first radiating portion 312, a second radiating portion 314, a first contact portion 316, and a second contact portion 318. The first radiating portion 312 is located between the phase-shift switching diode 200 and the second radiating portion 314, and the first radiating portion 312 has a first length a1. The first length a1 is the length of the portion of the first radiating portion 312 along the vertical axis direction D1, and the total length of the first radiating portion 312 along the vertical axis direction D1 is equal to twice the first length a1 plus the width c of the first contact portion 316 (i.e., the total length is 2 × a1 + c). The second radiating portion 314 has a second length b1 that is different from the first length a1. The second length b1 is the length of the portion of the second radiating portion 314 along the vertical axis direction D1, and the total length of the second radiating portion 314 along the vertical axis direction D1 is equal to twice the second length b1 plus the width c of the second contact portion 318 (i.e., the total length is 2 × b1 + c). In this embodiment, the first length a1 is greater than the second length b1, and the total length of the first radiating portion 312 is also greater than the total length of the second radiating portion 314. Furthermore, the first contact portion 316 is in contact with the phase-shift switching diode 200 and the first radiating portion 312 and has a width c. The second contact portion 318 is in contact with the first radiating portion 312 and the second radiating portion 314 and has a width c and a length d. The first contact portion 316, the second contact portion 318, and the phase-shift switching diode 200 have the same width.

[0032] The second metal member 320 of the metal circuit 300 (the other of the first metal member 310 and the second metal member 320) includes a third radiating portion 322, a fourth radiating portion 324, a third contact portion 326, and a fourth contact portion 328. The third radiating portion 322 is located between the phase-shift switching diode 200 and the fourth radiating portion 324, and the third radiating portion 322 has a third length a2. The third length a2 is the length of the portion of the third radiating portion 322 along the vertical axis direction D1, and the total length of the third radiating portion 322 along the vertical axis direction D1 is equal to twice the third length a2 plus the width c of the third contact portion 326 (i.e., the total length is 2 × a2 + c). The fourth radiating portion 324 also has a fourth length b2 that is different from the third length a2. The fourth length b2 is the length of the portion of the fourth radiating portion 324 along the vertical axis direction D1, and the total length of the fourth radiating portion 324 along the vertical axis direction D1 is equal to twice the fourth length b2 plus the width c of the fourth contact portion 328 (i.e., the total length is 2 × b2 + c). In this embodiment, the third length a2 of the third radiating portion 322 is equal to the first length a1 of the first radiating portion 312, and the fourth length b2 of the fourth radiating portion 324 is equal to the second length b1 of the second radiating portion 314. The third length a2 is greater than the fourth length b2, and the total length of the third radiating portion 322 is also greater than the total length of the fourth radiating portion 324. The first metal member 310 and the second metal member 320 are located at both ends of the phase-shift switching diode 200, and so that the phase-shift switching diode 200 and the metal circuit 300 take on a dumbbell shape, the first metal member 310 and the second metal member 320 both form a structure that is lower on the outside and higher on the inside. Furthermore, the third contact portion 326 is in contact with the phase-shift switching diode 200 and the third radiating portion 322 and has a width c. The fourth contact portion 328 is in contact with the third radiating portion 322 and the fourth radiating portion 324 and has a width c and a length d. The third contact portion 326, the fourth contact portion 328 and the phase-shift switching diode 200 have the same width. Furthermore, the fourth radiating portion 324 is provided with a semicircular or arc-shaped protrusion 3202 extending in the horizontal direction D2 away from the phase-shift switching diode 200.In this embodiment, the convex portion 3202 is arc-shaped, the center of the circle corresponding to the convex portion 3202 is located at the fourth radial portion 324, and the circle corresponding to the convex portion 3202 has a radius r; however, the present invention is not limited thereto.

[0033] The high-frequency choke 400 includes a line segment 410 and a radial stub 420. The line segment 410 corresponds to a quarter-wave line and is connected to the radial stub 420. The high-frequency suppression layer ML3 further includes a grounding metal member 402, which corresponds to the second metal member 320 of the radiating layer ML1. The high-frequency choke 400 has several parameters, including radius r, line lengths f and g, sector side length j, sector width k, and connection distance l.

[0034] Table 1 shows the numerical values ​​of each parameter in this embodiment, and the parameters include the first length a1, second length b1, third length a2, fourth length b2, width c, length d, radius r, line lengths f and g, sector side length j, sector width k, and connection distance l, however, the present invention is not limited to these numerical values. [Table 1]

[0035] As a result, the reconfigurable reflect array structure 100 of the present invention utilizes a combination of phase-shift switching diodes 200 and metal circuits 300 to form a dumbbell shape, possesses broadband and wide scanning range characteristics, has a simple structure, low cost, low loss, and is highly suitable for wireless mobile communications applications.

[0036] Please refer to Figures 1, 4, and 5. Figure 4 shows a schematic diagram of the relationship between phase and frequency of the reconfigurable reflect array structure 100 in Figure 1, and Figure 5 shows a schematic diagram of the relationship between the return loss and frequency of the reconfigurable reflect array structure 100 in Figure 1. As shown in the drawings, "deg." represents the phase angle, "ON" indicates that the phase-shift switching diode 200 is in the ON state and can be considered as resistance, and "OFF" indicates that the phase-shift switching diode 200 is in the OFF state and can be considered as capacitance. The bandwidth of the reconfigurable reflect array structure 100 is 19%, covering 24.9 GHz to 30.1 GHz, and meets the specified bandwidth requirements. Furthermore, simulation tests were performed on 1600 (40×40) reconfigurable reflect array structures 100, and the peak simulation gain was 29.4 dB, with a feasible beam scanning range of plus or minus 60°. In addition, the reconfigurable reflect array structure 100 in Figure 1 can be considered as a reconfigurable reflect array unit, and multiple reconfigurable reflect array units can be combined to form a single one-dimensional or two-dimensional array, the size of which can be determined as needed.

[0037] Please also refer to Figures 1, 6A, 6B, and 6C. Figure 6A shows a schematic diagram of a reconfigurable reflect array structure 100a according to a second embodiment of the present invention (only the radiating layer is shown), Figure 6B shows a schematic diagram of the relationship between phase and frequency of the reconfigurable reflect array structure 100a in Figure 6A, and Figure 6C shows a schematic diagram of the relationship between the reflection coefficient and frequency of the reconfigurable reflect array structure 100a in Figure 6A. As shown in the drawings, the reconfigurable reflect array structure 100a comprises a phase-shift switching diode 200a and a metal circuit 300a. The phase-shift switching diode 200a is the same as the phase-shift switching diode 200 in Figure 1. The metal circuit 300a includes a first metal member 310a and a second metal member 320a. The first metal member 310a is electrically connected to one end of the phase-shift switching diode 200a, and the second metal member 320a is electrically connected to the other end of the phase-shift switching diode 200a. In this embodiment, the first metal member 310a and the second metal member 320a are electrically connected to the phase-shift switching diode 200a by wire bonding, but the present invention is not limited thereto. The first metal member 310a (i.e., one of the first metal member 310a and the second metal member 320a) includes a first radiating portion 312a and a second radiating portion 314a. The first radiating portion 312a is located between the phase-shift switching diode 200a and the second radiating portion 314a, and the first radiating portion 312a has a first length a1 and is annular, and the second radiating portion 314a has a second length b1 different from the first length a1.

[0038] Specifically, the first length a1 is smaller than the second length b1. The second radiating portion 314a is ring-shaped, surrounding the outer circumference of the first radiating portion 312a, and the first radiating portion 312a is spaced at least one interval (e.g., intervals d1, d2) away from the second radiating portion 314a. The first radiating portion 312a surrounds the outer circumference of the phase-shift switching diode 200a, in other words, the first radiating portion 312a surrounds the outer circumference of the phase-shift switching diode 200a and the second metal member 320a (i.e., the other of the first metal member 310a and the second metal member 320a). The first radiating portion 312a may be square, circular, or elliptical, and the second radiating portion 314a may be square or arc-shaped. In this embodiment, both the first radiating section 312a and the second radiating section 314a are rectangular in shape, and the total length of the first radiating section 312a is shorter than the total length of the second radiating section 314a. As a result, the reconfigurable reflect array structure 100a of the present invention forms a double ring using a combination of phase-shift switching diodes 200a and metal circuits 300a, possessing broadband and wide scanning range characteristics, a simple structure, low cost, low loss, and being highly suitable for application in wireless mobile communications.

[0039] Please also refer to Figures 6A, 7A, 7B, 7C, and 7D. Figure 7A shows a schematic perspective view of a reconfigurable reflect array structure 100b according to a third embodiment of the present invention, Figure 7B shows a schematic plan view of the reconfigurable reflect array structure 100b of Figure 7A, Figure 7C shows a schematic diagram of the relationship between phase and frequency of the reconfigurable reflect array structure 100b of Figure 7A, and Figure 7D shows a schematic diagram of the relationship between the reflection coefficient and frequency of the reconfigurable reflect array structure 100b of Figure 7A. As shown in the drawings, the reconfigurable reflect array structure 100b comprises a phase-shift switching diode 200b, a metal circuit 300b, and a colloid 500. The metal circuit 300b includes a first metal member 310b and a second metal member 320b. The first metal member 310b includes a first radiating portion 312b and a second radiating portion 314b. The structure of the phase-shift switching diode 200b and the metal circuit 300b is the same as the structure of the phase-shift switching diode 200a and the metal circuit 300a in Figure 6A, and its details will not be repeated. The colloid 500 may be black and is located above the phase-shift switching diode 200b, and the colloid 500 protects the contact points (welding wire and welding point) with the phase-shift switching diode 200b and the metal circuit 300b by covering a portion of the phase-shift switching diode 200b and the metal circuit 300b.

[0040] Please also refer to Figures 1, 6A, 7A, and 8. Figure 8 shows a schematic diagram of a control circuit 600 having a reconfigurable reflect array structure according to a fourth embodiment of the present invention. The control circuit 600 having a reconfigurable reflect array structure comprises a plurality of reconfigurable reflect array structures 610 and a control unit 620, each of which may be the above-mentioned reconfigurable reflect array structures 100, 100a, and 100b, and each reconfigurable reflect array structure 610 comprises a phase-shift switching diode 200c, the details of which will not be described repeatedly. The control unit 620 can be used to control the plurality of reconfigurable reflect array structures 610.

[0041] The control unit 620 is connected to each reconfigurable reflect array structure 610 and is used to control the conduction of the phase-shift switching diode 200c. Specifically, the control unit 620 includes a light-emitting diode (LED) 622, a bipolar junction transistor (BJT) 624, a resistor unit 626, a shift register 628, a power supply 602, and a low dropout regulator (LDO) 604. The conduction (light emission) of the light-emitting diode 622 corresponds to the conduction of the phase-shift switching diode 200c in the reconfigurable reflect array structure 610. The bipolar junction transistor 624 is connected to the reconfigurable reflect array structure 610. The bipolar junction transistor 624 includes an emitter, a base, and a collector, the emitter, base, and collector being connected to a reconfigurable reflect array structure 610, a resistor unit 626, and a low-dropout regulator 604, respectively, and the emitter voltage can correspond to the power supply voltage Vc in Figure 1. The resistor unit 626 is connected to the light-emitting diode 622 and the bipolar junction transistor 624, and the resistor unit 626 includes multiple resistors. A shift register 628 is connected to the resistor unit 626. The shift register 628 controls the conduction of the phase-shift switching diode 200c by the resistor unit 626 and the bipolar junction transistor 624, and controls the conduction of the light-emitting diode 622 by the resistor unit 626. The power supply unit 602 is connected to the shift register 628 and the low dropout regulator 604, and the low dropout regulator 604 is connected to the bipolar junction transistor 624 to supply the desired voltage to the bipolar junction transistor 624.In one embodiment, the power supply 602 can supply 5V and 3.3V to the shift register 628 and the low dropout regulator 604, respectively, and the low dropout regulator 604 can supply 1.5V to the bipolar junction transistor 624, but the present invention is not limited thereto. Thus, the control circuit 600 having the reconfigurable reflect array structure of the present invention is integrated using readily available elements and has the characteristics of stable bias voltage, DC link detection and low power consumption.

[0042] In other embodiments, a control unit for a control circuit having a reconfigurable reflect array structure can be realized by combining a microcontroller unit (MCU) with light-emitting diodes, bipolar junction transistors, resistor units, shift registers, and a power supply.

[0043] As can be seen from the above embodiments, the present invention has the following advantages. First, the reconfigurable reflect array structure utilizes a combination of phase-shift switching diodes and metal circuits to form a dumbbell shape or double ring, possessing broadband and wide scanning range characteristics, a simple structure, low cost, and low loss, as well as significantly improving the signal quality of millimeter-wave wireless communication networks, making it very suitable for wireless mobile communication applications. Second, the control circuit having the reconfigurable reflect array structure is integrated using readily available elements and has the characteristics of stable bias voltage, DC link detection, and low power consumption.

[0044] Although the present invention is disclosed in the embodiments described above, these embodiments are not intended to limit the present invention, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be limited to that of the scope of the patent application appended later. [Explanation of Symbols]

[0045] 100, 100a, 100b, 610: Reconfigurable reflect array structure 200, 200a, 200b, 200c: Phase-shift switching diodes 300, 300a, 300b: Metal circuit 310, 310a, 310b: First metal member 312, 312a, 312b: 1st radiation part 314, 314a, 314b: 2nd radiation part 316: 1st contact part 318:Second contact part 320, 320a, 320b: Second metal member 3202: Convex part 322: Third Radiation Unit 324: Fourth Radiation Unit 326:Third contact part 328: 4th contact part 400: High-frequency choke 402: Grounding metal component 410: Line segment 420: Radial stub 500: Colloid 600: Control circuit with reconfigurable reflect array structure 602: Power supply 604: Low Dropout Regulator 620: Control Unit 622: Light-emitting diode 624: Bipolar junction transistor 626: Resistor Unit 628: Shift Register a1: First length a2: Third length b1: Second length b2: Fourth length c: Width d: length d1, d2: Interval D1: Vertical axis D2: Horizontal axis f, g: line length I: Direct current j: fan side length k: sector width l: Connection distance ML1: Radiation layer ML2: Ground layer ML3: High frequency suppression layer ML4: DC bias layer r: radius Vc: Power supply voltage

Claims

1. Phase-shift switching (P-Intrinsic-N; P-I-N) diodes, A metal circuit including a first metal member coupled to one end of the phase-shift switching diode and a second metal member coupled to the other end of the phase-shift switching diode, Equipped with, One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase-shift switching diode and the second radiating portion and has a first length, and the second radiating portion has a second length different from the first length. The other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase-shift switching diode and the fourth radiating portion and has a third length, and the fourth radiating portion has a fourth length different from the third length. The third length of the third radiating portion is equal to the first length of the first radiating portion, and the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion. The third length is greater than the fourth length so that the phase-shift switching diode and the metal circuit form a dumbbell shape. The first and second radiating portions are each rectangular, the first length is the length of the portion of the first radiating portion along the vertical axis, and the second length is the length of the portion of the second radiating portion along the vertical axis. Reconfigurable ReflectArray (RRA) structure.

2. The reconfigurable reflect array structure according to claim 1, wherein the first length is greater than the second length.

3. The reconfigurable reflect array structure according to claim 1, wherein the fourth radiating portion has a semicircular or arc-shaped protrusion that extends away from the phase-shift switching diode.

4. Phase-shift switching (P-Intrinsic-N; P-I-N) diodes, A metal circuit including a first metal member electrically connected to one end of the phase-shift switching diode and a second metal member electrically connected to the other end of the phase-shift switching diode, Equipped with, One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase-shift switching diode and the second radiating portion, has a first length and is annular, and the second radiating portion has a second length different from the first length. The first and second radiating portions are each rectangular, the first length is the length of the portion of the first radiating portion along the horizontal axis, and the second length is the length of the portion of the second radiating portion along the horizontal axis. Reconfigurable ReflectArray (RRA) structure.

5. The reconfigurable reflect array structure according to claim 4, wherein the first length is smaller than the second length.

6. The reconfigurable reflect array structure according to claim 4, wherein the second radiating portion is annular in shape, surrounding the outer periphery of the first radiating portion, and the first radiating portion is spaced at least one distance apart from the second radiating portion.

7. The reconfigurable reflect array structure according to claim 4, wherein the first radiating portion surrounds the phase-shift switching diode and the outer circumference of the other of the first and second metal members.

8. The reconfigurable reflect array structure according to claim 4, further comprising a colloid covering a part of the phase-shift switching diode and the metal circuit.

9. Phase-shift switching (P-Intrinsic-N; P-I-N) diodes, A reconfigurable reflect array structure comprising a metal circuit including a first metal member coupled to one end of the phase-shift switching diode and a second metal member coupled to the other end of the phase-shift switching diode, wherein one of the first and second metal members includes a first radiating portion and a second radiating portion, the first radiating portion being located between the phase-shift switching diode and the second radiating portion and having a first length, and the second radiating portion having a second length different from the first length, A control unit connected to the reconfigurable reflect array structure and for controlling the conduction of the phase-shift switching diodes, Equipped with, The control unit is Light-emitting diode (LED), A bipolar junction transistor (BJT) connected to a reconfigurable reflect array structure, A resistor unit connected to the light-emitting diode and the bipolar junction transistor, A shift register connected to the resistor unit, Includes, The shift register controls the conduction of the phase shift switching diode by means of the resistor unit and the bipolar junction transistor, and controls the conduction of the light-emitting diode by means of the resistor unit. The first and second radiating portions are each rectangular, the first length is the length of the portion of the first radiating portion along the vertical axis, and the second length is the length of the portion of the second radiating portion along the vertical axis. A control circuit having a reconfigurable reflectarray (RRA) structure.

10. The control circuit having a reconfigurable reflect array structure according to claim 9, wherein the first length is greater than the second length.

11. The other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase-shift switching diode and the fourth radiating portion and has a third length, the fourth radiating portion has a fourth length, the third length of the third radiating portion is equal to the first length of the first radiating portion, the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion, and the third length is greater than the fourth length such that the phase-shift switching diode and the metal circuit have a dumbbell shape, the control circuit having a reconfigurable reflect array structure according to claim 9.

12. A control circuit having a reconfigurable reflect array structure according to claim 9, wherein the second radiating portion is annular in shape, surrounding the outer periphery of the first radiating portion, and the first radiating portion is spaced at least one distance apart from the second radiating portion.

13. The control circuit having the reconfigurable reflect array structure according to claim 9, wherein the first radiating portion surrounds the phase-shift switching diode and the outer circumference of the other of the first and second metal members.

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