Display device and method for manufacturing the same

Abstract

To provide a display device with an enhanced sealing characteristic despite small thickness, and a manufacturing method for the same.SOLUTION: A display device includes a first pixel electrode and a second pixel electrode that are disposed apart from each other on a substrate, a pixel defining film with an opening for exposing a central part of each of the first pixel electrode and the second pixel electrode, an intermediate layer disposed on the first pixel electrode, the second pixel electrode, and the pixel defining film and having a penetration hole for exposing at least a part of an upper surface of the pixel defining film between the first pixel electrode and the second pixel electrode, a counter electrode disposed on the intermediate layer facing the first pixel electrode and the second pixel electrode, and an inorganic sealing layer disposed on the counter electrode.SELECTED DRAWING: Figure 13

Description

Technical Field

[0003]

[0001] The present invention relates to a display device and a manufacturing method thereof, and more particularly, to a display device with enhanced sealing characteristics while having a thin thickness and a manufacturing method thereof.

Background Art

[0002] Among display devices, organic electroluminescent display devices have advantages such as a wide viewing angle, excellent contrast, and high response speed, and are attracting attention as next-generation display devices.

[0003] Generally, an organic electroluminescent display device is provided with a thin-film transistor and an organic electroluminescent diode as a display element on a substrate, and the organic electroluminescent diode emits light by itself. A sealing member is provided on the organic electroluminescent diode to seal the organic electroluminescent diode, thereby blocking the intrusion of external moisture and impurities into the organic electroluminescent diode.

[0004] Such an organic electroluminescent display device may be used as a display unit of a small product such as a mobile phone, or may be used as a display unit of a large product such as a television. <​​​​​​​​​​​​​​​To solve the aforementioned problems, a display device according to one aspect of the technical concept of the present invention is characterized by comprising: a first pixel electrode and a second pixel electrode arranged separately from each other on a substrate; a pixel definition film having an opening that exposes the central portions of the first pixel electrode and the second pixel electrode; an interlocking layer disposed on the first pixel electrode, the second pixel electrode, and the pixel definition film, having through holes that expose at least a portion of the upper surface of the pixel definition film between the first pixel electrode and the second pixel electrode; a counter electrode disposed on the interlocking layer opposite the first pixel electrode and the second pixel electrode; and an inorganic sealing layer disposed on the counter electrode.

[0007] In this embodiment, the counter electrode may be in direct contact with the upper surface of the pixel definition film through the through-hole.

[0008] In this embodiment, a spacer may be further provided between the pixel definition film and the counter electrode, corresponding to the space between the first pixel electrode and the second pixel electrode.

[0009] In this embodiment, the intermediate layer does not necessarily have to be placed on the upper surface of the spacer.

[0010] In this embodiment, the opposing electrode may be in direct contact with the upper surface of the spacer through the through-hole.

[0011] In this embodiment, the spacer may have a retractable portion in which a part of its upper surface is retracted toward the substrate.

[0012] In this embodiment, the opposing electrode may be in direct contact with the inner surface of the retraction portion.

[0013] In this embodiment, the thickness of the inorganic encapsulation layer may be 200 nm to 2 μm.

[0014] In this embodiment, the inorganic sealing layer may have a multilayer structure of at least two layers.

[0015] In this embodiment, the inorganic sealing layer comprises a first layer and a second layer that are sequentially laminated, and the first layer and the second layer may contain the same substance but have different composition ratios.

[0016] In this embodiment, the thickness of the first layer and the second layer may be 50 nm to 500 nm, respectively.

[0017] In this embodiment, the system may further include an input sensing layer comprising a planarized organic layer disposed on an inorganic sealing layer, an inorganic insulating layer disposed on the planarized organic layer, and a sensing electrode disposed on the inorganic insulating layer.

[0018] In this embodiment, the planarized organic layer may be directly interposed between the inorganic sealing layer and the inorganic insulating layer.

[0019] To solve the aforementioned problems, a display device according to another aspect of the technical concept of the present invention is characterized by comprising: a first pixel electrode and a second pixel electrode arranged apart from each other on a substrate; a pixel definition film having an opening that exposes the central portions of the first pixel electrode and the second pixel electrode; a spacer disposed on the pixel definition film corresponding to the space between the first pixel electrode and the second pixel electrode; an interlocking layer disposed on the first pixel electrode, the second pixel electrode, and the spacer, wherein the thickness of the first portion corresponding to the spacer is thinner than the thickness of the second portion corresponding to the first pixel electrode and the second pixel electrode; a counter electrode disposed on the interlocking layer; and an inorganic sealing layer disposed on the counter electrode.

[0020] In this embodiment, the intermediate layer comprises a first light-emitting layer and a second light-emitting layer, which are arranged apart from each other so as to correspond to the first pixel electrode and the second pixel electrode, respectively; a first functional layer interposed between the first pixel electrode and the first light-emitting layer, and between the second pixel electrode and the second light-emitting layer; and a second functional layer interposed between the first light-emitting layer and the second light-emitting layer and the counter electrode, wherein the thickness of the second functional layer corresponding to the first portion may be thinner than the thickness of the second functional layer corresponding to the second portion.

[0021] In this embodiment, the intermediate layer comprises a first light-emitting layer and a second light-emitting layer, which are arranged apart from each other so as to correspond to the first pixel electrode and the second pixel electrode, respectively; a first functional layer interposed between the first pixel electrode and the first light-emitting layer, and between the second pixel electrode and the second light-emitting layer; and a second functional layer interposed between the first light-emitting layer and the second light-emitting layer and the counter electrode, wherein the thickness of the first functional layer corresponding to the first portion may be thinner than the thickness of the second functional layer corresponding to the second portion.

[0022] In this embodiment, the second functional layer corresponding to the first portion may be removed.

[0023] To solve the aforementioned problems, a method for manufacturing a display device according to another aspect of the technical idea of ​​the present invention includes forming a pixel circuit layer on a substrate comprising a thin-film transistor and a planarization layer on the thin-film transistor; forming a pixel electrode on the pixel circuit layer; forming a pixel definition film on the pixel electrode having an opening that exposes the central part of the pixel electrode; forming a spacer on the pixel definition film; forming an intermediate layer over the pixel electrode, the pixel definition film, and the spacer; removing at least a portion of the intermediate layer formed on the spacer; forming a counter electrode on the intermediate layer; and forming an inorganic sealing layer on the counter electrode.

[0024] In this embodiment, particles may be formed on the spacer during the formation of the intermediate layer.

[0025] In this embodiment, removing at least a part of the intermediate layer may include removing at least a part of the intermediate layer and simultaneously removing the particles formed on the spacer.

[0026] In this embodiment, removing at least a part of the intermediate layer may include removing the particles formed on the spacer using a laser.

[0027] In this embodiment, removing at least a part of the intermediate layer may include covering the substrate so that the surface of the intermediate layer faces in the vertical direction and irradiating a laser toward the particles formed on the spacer.

[0028] In this embodiment, removing at least a part of the intermediate layer may further include disposing a mask having a through-hole corresponding to the spacer opposite to the intermediate layer and irradiating a laser through the through-hole to the particles formed on the spacer.

[0029] In this embodiment, removing at least a part of the intermediate layer may further include removing at least a part of the spacer together.

[0030] In this embodiment, the counter electrode may be formed so as to be in direct contact with the upper surface of the spacer. <​​​​​​​​​In this embodiment, the inorganic sealing layer may be formed by a multilayer structure of at least two or more layers.

[0034] In this embodiment, forming the inorganic sealing layer includes forming a first inorganic layer and forming a second inorganic layer, wherein the first inorganic layer and the second inorganic layer may be formed to have different composition ratios by varying the amount of gas injected into the chamber.

[0035] In this embodiment, the present invention further includes forming an input sensing layer on the inorganic sealing layer, wherein forming the input sensing layer includes forming a planar organic layer on the inorganic sealing layer and forming a touch layer on the planar organic layer.

[0036] Other aspects, features, and advantages not mentioned above will become apparent from the following drawings, claims, and detailed description of the invention.

[0037] These general and specific aspects are realized using systems, methods, computer programs, or any combination of these systems, methods, and computer programs. [Effects of the Invention]

[0038] According to one embodiment of the present invention, a display device with enhanced sealing properties despite its thinness, and a method for manufacturing the same, can be provided. Of course, the scope of the present invention is not limited by such effects. [Brief explanation of the drawing]

[0039] [Figure 1] This is a schematic plan view showing a portion of a display device 1 according to one embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view showing a part of a display device 1 according to one embodiment of the present invention. [Figure 3] This is an equivalent circuit diagram of a pixel P that may be included in a display device 1 according to one embodiment of the present invention. [Figure 4] This is a schematic plan view showing a portion of the display area DA of a display device 1 according to one embodiment of the present invention. [Figure 5] This is a schematic plan view showing an enlarged view of section A in Figure 4. [Figure 6] This is a schematic cross-sectional view showing a part of a display device according to one embodiment of the present invention, corresponding to the cross-section along line B-B' in Figure 5. [Figure 7] This is a cross-sectional view showing an enlarged view of section C in Figure 6. [Figure 8] This is a schematic cross-sectional view showing an inorganic encapsulation layer 300 according to another embodiment of the present invention. [Figure 9] This is a cross-sectional view showing another embodiment C' of portion C in Figure 6. [Figure 10A] This is a cross-sectional view showing an enlarged view of part D in Figure 9, representing Embodiment D. [Figure 10B] This is a cross-sectional view showing an enlarged view of part D in Figure 9, representing embodiment D'. [Figure 10C] This is a cross-sectional view showing an enlarged view of part D in Figure 9, representing embodiment D''. [Figure 11] This is a schematic cross-sectional view showing a part of a display device according to yet another embodiment of the present invention. [Figure 12] This is a schematic cross-sectional view showing a part of a display device according to yet another embodiment of the present invention. [Figure 13] This is a schematic cross-sectional view showing a part of a display device according to yet another embodiment of the present invention. [Figure 14] This is a schematic cross-sectional view showing a part of a display device according to yet another embodiment of the present invention. [Figure 15] This is a schematic cross-sectional view showing a part of a method for manufacturing a display device according to yet another embodiment of the present invention. [Figure 16] This is a schematic cross-sectional view showing a part of a method for manufacturing a display device according to yet another embodiment of the present invention. [Figure 17]This is a schematic cross-sectional view showing a part of a method for manufacturing a display device according to yet another embodiment of the present invention. [Modes for carrying out the invention]

[0040] The present invention can be modified in various ways and has a variety of embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and how they are achieved, will become clear when viewed in detail with the drawings and the embodiments described below. However, the present invention is not limited to the embodiments disclosed below and can be realized in a variety of forms.

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, the same or corresponding components will be denoted by the same reference numerals, and redundant explanations thereof will be omitted.

[0042] In this specification, terms such as "first," "second," etc., are used not in a restrictive sense, but to distinguish one component from other components.

[0043] As used herein, singular expressions include plural expressions unless they imply a clearly different meaning in context.

[0044] In this specification, terms such as “includes” or “having” mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added.

[0045] In this specification, when a part such as a membrane, region, or component is said to be above or above another part, this includes not only cases where it is directly above the other part, but also cases where another membrane, region, or component is interposed between them.

[0046] In this specification, when we say that membranes, regions, components, etc. are connected, this includes cases where membranes, regions, components are directly connected, and / or indirectly connected with other membranes, regions, components interposed between them. For example, when we say that membranes, regions, components, etc. are electrically connected in this specification, this refers to cases where membranes, regions, components are directly and electrically connected, and / or indirectly and electrically connected with other membranes, regions, components, etc. interposed between them.

[0047] In this specification, "A and / or B" means that it is either A, B, or both A and B. And "at least one of A and B" means that it is either A, B, or both A and B.

[0048] In this specification, the x-axis, y-axis, and z-axis are not limited to the three axes on a Cartesian coordinate system, but can be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they may also refer to different directions that are not orthogonal to each other.

[0049] In this specification, if an embodiment can be implemented in a different way, a particular sequence of steps may be performed in a different order than that described. For example, two steps described consecutively may be performed substantially simultaneously, or in the reverse order of the description.

[0050] In drawings, the sizes of components may be exaggerated or reduced for illustrative purposes. For example, the sizes and thicknesses of each component shown in the drawings are arbitrarily shown for illustrative purposes, and the present invention is not necessarily limited to those shown.

[0051] Figure 1 is a schematic plan view showing a portion of a display device 1 according to one embodiment of the present invention.

[0052] Referring to Figure 1, the display device 1 comprises a display area DA and a peripheral area NDA outside the display area DA. Multiple pixels P, including display elements, are arranged in the display area DA. The display device 1 provides an image using light emitted from the multiple pixels P arranged in the display area DA. The peripheral area NDA is a kind of non-display area where no display elements are arranged, and the display area DA may be entirely surrounded by the peripheral area NDA.

[0053] Figure 1 shows a display device 1 having a flat display surface, but the present invention is not limited thereto. In other embodiments, the display device 1 may include a three-dimensional display surface or a curved display surface.

[0054] If the display device 1 includes a three-dimensional display surface, it may include, for example, a polygonal prism-shaped display surface. In other embodiments, if the display device 1 includes a curved display surface, it goes without saying that the display device 1 can be realized in a variety of forms, such as flexible, foldable, or rollable display devices.

[0055] Furthermore, in one embodiment, Figure 1 shows a display device 1 that can be applied to a mobile phone terminal. Although not shown, an electronic module, camera module, power supply module, etc. mounted on the main board can be arranged together with the display device 1 in a bracket / case or the like to constitute a mobile phone terminal. The display device 1 according to the present invention can be applied to medium and small electronic devices such as tablets, car navigation systems, game consoles, smartwatches, and large electronic devices such as televisions and monitors.

[0056] In Figure 1, the display area DA of the display device 1 is shown as a rounded rectangle with rounded corners. However, in other embodiments, the shape of the display area DA may be a circle, an ellipse, or a polygon such as a triangle or a pentagon.

[0057] In the following description, an organic electroluminescent display device will be used as an example of a display device 1 according to one embodiment of the present invention, but the display device of the present invention is not limited thereto. In other embodiments, the display device 1 of the present invention may be an inorganic electroluminescent display device (or an inorganic EL display device), or a display device such as a quantum dot luminescent display device. For example, the luminescent layer constituting the display element provided in the display device 1 may contain organic material, inorganic material, quantum dots, organic material and quantum dots, or inorganic material and quantum dots.

[0058] Figure 2 is a schematic cross-sectional view showing a part of a display device 1 according to one embodiment of the present invention.

[0059] Referring to Figure 2, a display device 1 according to one embodiment of the present invention comprises a display layer DU and an input sensing layer TU. The display panel DP may be defined as including the display layer DU and the input sensing layer TU which is directly disposed on the display layer DU. Although not shown, a polarizing layer and a window layer may be further disposed on the input sensing layer TU. At least some of the components of the display layer DU, input sensing layer TU, polarizing layer (not shown), and window layer (not shown) may be formed by a continuous process, or at least some of the components may be bonded to each other through adhesive members.

[0060] In one embodiment, the input sensing layer TU may be placed directly on the display layer DU. In this specification, "configuration B is placed directly on configuration A" means that no separate adhesive layer / adhesive member is placed between configuration A and configuration B. Configuration B is formed through a continuous process on the base surface provided by configuration A after configuration A has been formed.

[0061] The display layer DU generates an image, and the input sensing layer TU acquires coordinate information of an external input (e.g., a touch event). Although not shown separately, a display panel DP according to one embodiment of the present invention may further include a protective member located on the underside of the display layer DU. The protective member and the display layer DU may be bonded together via an adhesive member.

[0062] In the display layer DU, the pixel circuit layer PCL, the organic field light-emitting diode OLED, and the thin film encapsulation layer TFE are sequentially arranged on the substrate 100. The input sensing layer TU is directly arranged on the thin film encapsulation layer TFE. As shown in Figure 8, which will be described later, at least one planarizing organic layer 400 (Figure 8) is arranged on the thin film encapsulation layer TFE, which provides an even more planar base surface. Therefore, the configuration of the input sensing layer TU, which will be described later, reduces the defect rate even when formed by a continuous process.

[0063] The input sensing layer TU has a multilayer structure. The input sensing layer TU comprises a sensing electrode, a signal line (trace line) connected to the sensing electrode, and at least one insulating layer. The input sensing layer TU senses an external input, for example, in a capacitive manner. In the present invention, the operating method of the input sensing layer TU is not particularly limited, and in one embodiment of the present invention, the input sensing layer TU may sense an external input in an electromagnetic induction manner or a pressure sensing manner.

[0064] As shown in Figure 2, an input sensing layer TU according to one embodiment of the present invention comprises a first insulating layer IL1, a first conductive layer CL1, a second insulating layer IL2, a second conductive layer CL2, and a third insulating layer IL3. The sensing electrode is formed by electrically connecting the first conductive layer CL1 and the second conductive layer CL2 to each other.

[0065] For example, the first conductive layer CL1 and the second conductive layer CL2 each have a single-layer structure or a stacked multilayer structure. A single-layer conductive layer includes a metal layer or a transparent conductive layer. Metal layers include molybdenum, silver, titanium, copper, aluminum, and alloys thereof. Transparent conductive layers include transparent conductive oxides such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide). Other transparent conductive layers include conductive polymers such as PEDOT, metal nanowires, and graphene. A multilayer conductive layer includes multiple metal layers. Multiple metal layers may have, for example, a Ti / Al / Ti three-layer structure. A multilayer conductive layer includes at least one metal layer and at least one transparent conductive layer.

[0066] The first conductive layer CL1 and the second conductive layer CL2 each include a plurality of patterns. In one embodiment, the first conductive layer CL1 includes a first conductive pattern, and the second conductive layer CL2 includes a second conductive pattern. The first conductive pattern and the second conductive pattern may form the sensing electrodes described above. In one embodiment, the sensing electrodes may be provided in a mesh-like manner to prevent them from being visible to the user.

[0067] Each of the first insulating layer IL1 to the third insulating layer IL3 has a single-layer or multilayer structure. Each of the first insulating layer IL1 to the third insulating layer IL3 contains an inorganic material or a composite material of inorganic and organic materials. For example, at least one of the first insulating layer IL1 and the second insulating layer IL2 contains an inorganic film. The inorganic film contains at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide. In other embodiments, at least one of the first insulating layer IL1 to the third insulating layer IL3 contains an organic insulating material.

[0068] On the other hand, the input sensing layer TU according to one embodiment of the present invention further comprises a planarized organic layer 400. As will be described later, the display device 1 according to one embodiment of the present invention includes a single-layer inorganic encapsulation layer 300 (Figure 6) as the thin-film encapsulation layer TFE. Therefore, when the touch layer 410, including the first insulating layer IL1, is placed directly on the inorganic encapsulation layer 300, defects may occur if the upper surface of the display layer DU is not planar.

[0069] Therefore, by interposing the planarizing organic layer 400 between the inorganic sealing layer 300 and the touch layer 410, the touch layer 410 can be placed on a planarized surface.

[0070] Figure 3 is an equivalent circuit diagram of a pixel P that may be included in a display device 1 according to one embodiment of the present invention.

[0071] Referring to Figure 3, each pixel P includes a pixel circuit PC connected to scan lines SL and data lines DL, and an organic electroluminescent diode OLED connected to the pixel circuit PC.

[0072] The pixel circuit PC includes a drive thin-film transistor Td, a switching thin-film transistor Ts, and a storage capacitor Cst. The switching thin-film transistor Ts is connected to the scan line SL and the data line DL, and transmits the data signal Dm input through the data line DL to the drive thin-film transistor Td via the scan signal Sn input through the scan line SL.

[0073] The storage capacitor Cst is connected to the switching thin-film transistor Ts and the drive voltage line PL. The storage capacitor Cst is charged with a voltage corresponding to the difference between the voltage transmitted from the switching thin-film transistor Ts and the drive voltage ELVDD supplied to the drive voltage line PL.

[0074] The drive thin-film transistor Td is connected to the drive voltage line PL and the storage capacitor Cst, and controls the drive current flowing from the drive voltage line PL to the organic field light-emitting diode (OLED) in accordance with the voltage value charged in the storage capacitor Cst. The organic field light-emitting diode (OLED) emits light of a predetermined brightness according to the drive current Id.

[0075] Figure 3 illustrates a case where the pixel circuit PC includes two thin-film transistors and one storage capacitor, but the present invention is not limited thereto. In other embodiments, the pixel circuit PC may include seven thin-film transistors and one storage capacitor. In yet another embodiment, the pixel circuit PC may include two or more storage capacitors.

[0076] Figure 4 is a schematic plan view showing a portion of the display area DA of the display device 1 according to one embodiment of the present invention, and Figure 5 is a schematic plan view showing an enlarged view of portion A of Figure 4.

[0077] Referring to Figure 4, multiple pixels P are arranged on the display area DA. Each of the multiple pixels P may include a display element such as an organic electroluminescent diode (OLED). Each pixel P may also be a sub-pixel that emits red, green, blue, or white light.

[0078] In one embodiment, the multiple pixels P arranged on the display area DA may include red-emitting pixels Pr, green-emitting pixels Pg, and blue-emitting pixels Pb. Figure 4 shows that the multiple pixels P are arranged in a so-called diamond-pentile pattern, but it goes without saying that the multiple pixels P may be arranged in various shapes such as stripe patterns or general pentile patterns. In another embodiment, assuming a virtual cell arranged in a grid, two pixels P may be arranged within a single cell. For example, in Figure 4, a red-emitting pixel Pr and a green-emitting pixel Pg, or a green-emitting pixel Pg and a blue-emitting pixel Pb, are arranged within a single cell.

[0079] Spacers 217 are placed in the display area DA. Multiple spacers 217 are placed in the display area DA, but they may be separated from each other via multiple pixels P, as illustrated in Figure 4. Figure 4 shows a structure in which multiple spacers 217 are separated at the same intervals along one direction (e.g., the x-direction) and another direction (e.g., the y-direction), but the present invention is not necessarily limited to this.

[0080] For more details, please refer to Figure 5, which shows the arrangement of pixels Pr, Pg, and Pb around spacer 217. Pixels Pr, Pg, and Pb are arranged to surround spacer 217. In other words, spacer 217 is positioned between pixels Pr, Pg, and Pb. For example, pixels Pr, Pg, and Pb are positioned above, below, left, and right of spacer 217.

[0081] Each pixel Pr, Pg, and Pb includes light-emitting layers 222br, 222bg, and 222bb, respectively, which are positioned on the pixel electrodes 221R, 221G, and 221B. The pixel defining film 215 has an aperture OP-EA that exposes the central portion of each of the pixel electrodes 221R, 221G, and 221B, and the light-emitting layers 222br, 222bg, and 222bb are positioned within such an aperture OP-EA. The aperture OP-EA defines the light-emitting regions Pr-EA, Pg-EA, and Pb-EA of each pixel Pr, Pg, and Pb.

[0082] The spacer 217 is positioned between pixels Pr, Pg, and Pb, and is positioned at the same distance d from each pixel Pr, Pg, and Pb relative to the aperture OP-EA of each pixel Pr, Pg, and Pb. Since the spacer 217 between pixels Pr, Pg, and Pb is located in the direction from which light is emitted, as mentioned above, positioning it at the same distance d from the light-emitting regions Pr-EA, Pg-EA, and Pb-EA of each pixel Pr, Pg, and Pb is advantageous in terms of the uniformity of light emission of pixels Pr, Pg, and Pb around the spacer 217. For this reason, the spacer 217 in Figure 5 has a width in one direction (e.g., the x-direction) that is greater than its width in the other direction (e.g., the y-direction), but the present invention is not necessarily limited to this. Also, in one embodiment, there is one spacer 217 in Figure 5, but there may be multiple spacers 217 between pixels Pr, Pg, and Pb.

[0083] Spacer 217 can support the fine metal mask (FMM) by contacting it, in order to prevent defects such as imprints from occurring in the display area DA due to the sagging of the FMM used in the process of forming the light-emitting layer for each pixel P. During this process, the FMM may also come into direct contact with the upper surface of spacer 217. At this time, large particles PC (Figure 15) are generated on the upper surface of spacer 217 due to contact with the FMM, as will be described later. Since these particles PC have a size of, for example, 2 μm to 5 μm, they destabilize the profile of the upper part of spacer 217, which can cause defects such as cracks in the upper layer.

[0084] In contrast, in the display device 1 according to one embodiment of the present invention, by removing the particles PC on the spacer 217 and then forming the counter electrode 223, it is possible to prevent cracks from occurring in the counter electrode 223 and the upper layer due to the particles PC. Furthermore, this allows a single layer inorganic encapsulation layer 300, which is made of an inorganic insulating material, to be provided on the organic field light-emitting diode OLED using a thin film encapsulation layer TFE, thereby dramatically reducing the thickness of the thin film encapsulation layer TFE of the display device 1, and reducing the overall thickness of the display device 1 and simplifying the manufacturing process.

[0085] Figure 6 is a schematic cross-sectional view showing a part of a display device according to one embodiment of the present invention, corresponding to the cross-section along line B-B' in Figure 5. Figure 7 is an enlarged cross-sectional view showing portion C of Figure 6, and Figure 8 is a schematic cross-sectional view showing an inorganic sealing layer 300 according to another embodiment of the present invention.

[0086] Referring to Figure 6, the first pixel P1 and the second pixel P2 are arranged on the substrate 100. The first pixel P1 and the second pixel P2 have the same structure, and below, the stacked structure will be described with one pixel as the center.

[0087] First, the substrate 100 contains glass or a polymer resin. In one embodiment, the substrate 100 may contain a plurality of sublayers. The plurality of sublayers may have a structure in which organic layers and inorganic layers are alternately laminated. If the substrate 100 contains a polymer resin, it may also contain polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

[0088] A display layer 200 containing a display element such as an organic electroluminescent diode, and a thin-film encapsulation layer TFE covering the display layer 200 are arranged on the substrate 100. The display layer 200 will be described in detail below.

[0089] A buffer layer 201 is formed on the substrate 100 to prevent impurities from penetrating the semiconductor layer Act of the thin-film transistor TFT. The buffer layer 201 may contain inorganic insulators such as silicon nitride, silicon oxynitride, and silicon oxide, and may be a single layer or multiple layers containing the aforementioned inorganic insulators.

[0090] A pixel circuit PC is placed on the buffer layer 201. The pixel circuit PC may be placed corresponding to each pixel P. The pixel circuit PC includes a thin-film transistor TFT and a storage capacitor Cst. The thin-film transistor TFT includes a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0091] Although not shown in Figure 6, the data line DL of the pixel circuit PC is electrically connected to the switching thin-film transistor included in the pixel circuit PC. In this embodiment, a top-gate type is shown in which the gate electrode GE is located on the semiconductor layer Act via the gate insulating layer 203, but according to other embodiments, the thin-film transistor TFT may be a bottom-gate type.

[0092] The semiconductor layer Act contains polysilicon. Alternatively, the semiconductor layer Act may contain amorphous silicon, an oxide semiconductor, or an organic semiconductor. The gate electrode GE may contain a low-resistance metallic material. The gate electrode GE may contain a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and is formed as a multilayer or monolayer containing the aforementioned materials.

[0093] The gate insulating layer 203 between the semiconductor layer Act and the gate electrode GE may contain inorganic insulators such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. The gate insulating layer 203 may be a single layer or multiple layers containing the aforementioned materials.

[0094] The source electrode SE and drain electrode DE are located on the same layer as the data line DL and contain the same material. The source electrode SE, drain electrode DE, and data line DL contain a material with good conductivity, including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and are formed as a multilayer or monolayer containing the aforementioned material. In one embodiment, the source electrode SE, drain electrode DE, and data line DL may be formed as multiple layers of Ti / Al / Ti.

[0095] The storage capacitor Cst includes a lower electrode CE1 and an upper electrode CE2 that overlap each other via a first interlayer insulating layer 205. The storage capacitor Cst overlaps with a thin-film transistor TFT. In this regard, Figure 6 illustrates that the gate electrode GE of the thin-film transistor TFT also serves as the lower electrode CE1 of the storage capacitor Cst. In other embodiments, the storage capacitor Cst does not have to overlap with the thin-film transistor TFT. The storage capacitor Cst is covered by a second interlayer insulating layer 207. The upper electrode CE2 of the storage capacitor Cst contains a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and is formed in a multilayer or monolayer containing the aforementioned material.

[0096] The first interlayer insulating layer 205 and the second interlayer insulating layer 207 contain inorganic insulators such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. The first interlayer insulating layer 205 and the second interlayer insulating layer 207 may be a single layer or multiple layers containing the aforementioned substances.

[0097] The pixel circuit PC, which includes a thin-film transistor TFT and a storage capacitor Cst, is covered by a first organic insulating layer 209. The upper surface of the first organic insulating layer 209 may be flattened.

[0098] Although not shown, a third interlayer insulating layer (not shown) may be further disposed beneath the first organic insulating layer 209. The third interlayer insulating layer contains an inorganic insulator such as silicon oxide, silicon nitride, or silicon oxynitride.

[0099] The pixel circuit PC is electrically connected to the pixel electrode 221. For example, as shown in Figure 6, a contact metal layer CM is interposed between the thin-film transistor TFT and the pixel electrode 221. The contact metal layer CM is connected to the thin-film transistor TFT through contact holes formed in the first organic insulating layer 209, and the pixel electrode 221 is connected to the contact metal layer CM through contact holes formed in the second organic insulating layer 211 on top of the contact metal layer CM. The contact metal layer CM contains a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and is formed as a multilayer or monolayer containing the aforementioned material. In one embodiment, the contact metal layer CM may be formed as multiple Ti / Al / Ti layers.

[0100] The first organic insulating layer 209 and the second organic insulating layer 211 contain organic insulators such as general-purpose polymers like polymethyl methacrylate (PMMA) and polystyrene (PS), polymer derivatives having a phenolic group, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine polymers, p-xylene polymers, vinyl alcohol polymers, and mixtures thereof. In one embodiment, the first organic insulating layer 209 and the second organic insulating layer 211 may contain polyimide.

[0101] The pixel electrode 221 is formed on the second organic insulating layer 211. The pixel electrode 221 contains conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In other embodiments, the pixel electrode 221 may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. In other embodiments, the pixel electrode 221 may further include a film formed of ITO, IZO, ZnO, or In2O3 on and / or below the aforementioned reflective film.

[0102] A pixel definition film 215 is formed on the pixel electrode 221 (e.g., the first pixel electrode). The pixel definition film 215 includes an opening OP-EA that exposes the upper surface of the pixel electrode 221 and covers the edge of the pixel electrode 221. In other words, the pixel definition film 215 is provided at least between adjacent pixel electrodes 221 (e.g., between the first pixel electrode 221 and the first pixel electrode 221') and defines the pixel P. The pixel definition film 215 includes an organic insulator. Alternatively, the pixel definition film 215 may include an inorganic insulator such as silicon nitride, silicon oxynitride, or silicon oxide. Alternatively, the pixel definition film 215 may include both an organic insulator and an inorganic insulator.

[0103] The intermediate layer 222 includes an emissive layer 222b. The intermediate layer 222 includes a first functional layer 222a located below the emissive layer 222b and / or a second functional layer 222c located above the emissive layer 222b. The emissive layer 222b includes a polymer or low molecular weight organic material that emits light of a predetermined hue.

[0104] The first functional layer 222a is a single layer or multiple layers. For example, when the first functional layer 222a is formed of a polymer material, the first functional layer 222a is a single-layer hole transport layer (HTL) which may be formed of polyethylene dihydroxythiophene (PEDOT) or polyaniline (PANI). When the first functional layer 222a is formed of a low-molecular-weight material, the first functional layer 222a may include a hole injection layer (HIL) and a hole transport layer (HTL).

[0105] The second functional layer 222c is not always present. For example, when the first functional layer 222a and the light-emitting layer 222b are formed from polymer materials, it is desirable to form the second functional layer 222c. The second functional layer 222c is a single layer or multiple layers. The second functional layer 222c includes an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0106] Of the intermediate layer 222, the light-emitting layer 222b is positioned for each pixel in the display area DA. The light-emitting layer 222b is patterned to correspond to the pixel electrode 221. Unlike the light-emitting layer 222b, the first functional layer 222a and / or the second functional layer 222c of the intermediate layer 222 are extended toward the peripheral area PA so that they are located not only in the display area DA but also in a part of the peripheral area PA.

[0107] The counter electrode 223 is made of a conductive material with a low work function. For example, the counter electrode 223 may include a (semi)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the counter electrode 223 may further include a layer of ITO, IZO, ZnO, or In2O3 on top of the (semi)transparent layer containing the aforementioned materials. The counter electrode 223 may be formed not only in the display area DA but also in the peripheral area PA. The counter electrode 223 extending toward the peripheral area PA is electrically connected to the second power supply wiring 170.

[0108] The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can also be formed by thermal deposition.

[0109] In some embodiments, a capping layer 224 may be located above the counter electrode 223. For example, the capping layer 224 may consist of one or more layers comprising a material selected from organic materials, inorganic materials, and mixtures thereof. In a selective embodiment, a LiF layer may be located above the capping layer 224.

[0110] The spacer 217 is placed on the pixel definition film 215. The spacer 217 is placed on the pixel definition film 215 between the first pixel electrode 221 and the second pixel electrode 221'. As previously mentioned, the spacer 217 is provided to support the FMM and is provided to have a predetermined height.

[0111] The spacer 217 contains an organic insulator such as polyimide. Alternatively, the spacer 217 may contain an inorganic insulator, or both an organic and an inorganic insulator. In one embodiment, the spacer 217 may contain a different material from the pixel definition film 215, or it may contain the same material as the pixel definition film 215. For example, both the pixel definition film 215 and the spacer 217 contain polyimide. In this case, the pixel definition film 215 and the spacer 217 may be formed together in a masking process using a halftone mask.

[0112] Referring to Figure 7, in this embodiment, the interlayer 222 corresponding to the upper surface 217u of the spacer 217 is removed. In other words, a through-hole 222op is formed in the interlayer 222 corresponding to the upper surface 217u of the spacer 217. It is understood that such a through-hole 222op is formed during the manufacturing process in which particles PC (Figure 15) located on the upper surface 217u of the spacer 217 are removed. Figures 6 and 7 illustrate that the width w1 of the through-hole 222op is formed to be narrower than the width w2 of the upper surface 217u of the spacer 217, but the present invention is not necessarily limited thereto.

[0113] The process of removing particles PC from the upper surface 217u of the spacer 217 is performed before the process of forming the counter electrode 223. Therefore, at least a portion of the counter electrode 223 is in direct contact with the upper surface 217u of the spacer 217, which is exposed to the outside through the through hole 222op.

[0114] Referring again to Figure 6, an inorganic encapsulation layer 300 is placed on top of the capping layer 224. The organic field light-emitting diode (OLED) is sealed by the inorganic encapsulation layer 300 and isolated from the outside air. The inorganic encapsulation layer 300 is integrally provided across the entire surface of the display area DA.

[0115] The thin-film encapsulation layer TFE includes an inorganic encapsulation layer 300. In one embodiment, the thin-film encapsulation layer TFE may have a single-layer structure formed by the inorganic encapsulation layer 300. The inorganic encapsulation layer 300 includes, for example, one or more inorganic materials from among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0116] In one embodiment, the inorganic encapsulation layer 300 may have a thickness t of, for example, about 0.2 μm to 2 μm, and preferably is formed to a thickness t of about 0.8 μm to 1.2 μm. This significantly reduces the thickness of the thin film encapsulation layer TFE compared to the case where the thin film encapsulation layer of the display device includes at least one inorganic encapsulation layer and at least one organic encapsulation layer, thereby reducing the overall thickness of the display device 1.

[0117] As described above, in one embodiment of the present invention, by removing particles PC formed on the spacer 217 and reducing the sealing force of the upper layer, particularly the inorganic sealing layer 300, during the manufacturing process, a display device 1 can be provided that has excellent sealing force even with only a single-layer inorganic sealing layer 300.

[0118] On the other hand, referring to Figure 8, the inorganic sealing layer 300 may have a multilayer structure of at least two layers. In this case, "multilayer structure" includes not only multiple layers that are structurally separated, but also multiple layers that are not structurally separated but can be separated through component analysis.

[0119] In one embodiment, the inorganic sealing layer 300 includes a first layer 300a, a second layer 300b, and a third layer 300c that are sequentially laminated. The first layer 300a, the second layer 300b, and the third layer 300c are inorganic layers containing an inorganic insulating material, and the first layer 300a, the second layer 300b, and the third layer 300c may contain the same material, may contain different materials, or may contain only a portion of the same material. The first layer 300a, the second layer 300b, and the third layer 300c may contain a material selected from, for example, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0120] To enhance the barrier properties of the inorganic encapsulation layer 300, it is advantageous to include a nitride series, such as silicon nitride, and to improve the permeability of the inorganic encapsulation layer 300, it is desirable to include silicon oxide or silicon oxynitride. For example, the first layer 300a contains silicon nitride, and the second layer 300b and third layer 300c contain silicon oxide or silicon oxynitride.

[0121] The thicknesses ta, tb, and tc of the first layer 300a, the second layer 300b, and the third layer 300c are formed to be approximately 50 nm to 500 nm. The thicknesses ta, tb, and tc of the first layer 300a, the second layer 300b, and the third layer 300c may be the same or they may be different from each other.

[0122] On the other hand, the inorganic encapsulation layer 300 may include multiple layers that are not structurally distinct. Substantially, these multiple layers refer to layers that contain the same substance but differ in their components or composition ratios. The inorganic encapsulation layer 300 is formed, for example, by chemical vapor deposition (CVD). In this case, the multiple layers that are not structurally distinct can be realized by changing the amount or type of gas injected into the chamber during the CVD formation process.

[0123] By making the inorganic encapsulation layer 300 a multilayer structure of inorganic layers in this way, the sealing force of the thin-film encapsulation layer TFE can be effectively improved.

[0124] Figure 9 is a cross-sectional view showing another embodiment C' of portion C in Figure 6, and Figures 10A to 10C are cross-sectional views showing embodiments D, D', and D'', which are enlarged views of portion D in Figure 9.

[0125] Referring to Figure 9, the functional layers 222a and 222c, the counter electrode 223, and the capping layer 224 are sequentially stacked on the upper surface 217u of the spacer 217. The inorganic sealing layer 300 is positioned to cover the capping layer 224. In this embodiment, the functional layers 222a and 222c are the first and second functional layers 222a and 222c, excluding the light-emitting layer.

[0126] The functional layers 222a and 222c, which are located on the upper surface 217u of the spacer 217, are in a form in which at least a portion has been removed. In one embodiment, the thickness of the portion of the functional layers 222a and 222c located on the upper surface 217u of the spacer 217 may be even thinner than the thickness of the remaining portion. For example, if the portion of the functional layers 222a and 222c located on the upper surface 217u of the spacer 217 is called the first portion 222p1, and the remaining portion outside of it is called the second portion 222p2, then the thickness tp1 of the first portion 222p1 is thinner than the thickness tp2 of the second portion 222p2. An example of the second portion 222p2 of the functional layers 222a and 222c may be the portion corresponding to the pixel electrode 221 in Figure 6 described above, but is not limited to this. However, for the sake of a clear comparison of the thickness of the first part 222p1 and the second part 222p2, it is desirable that the second part 222p2, like the first part 222p1, is also a part provided on a flat surface. Such a structure is formed when a portion of both the functional layers 222a and 222c are removed during the process of removing the particle PC formed on the spacer 217 during the manufacturing process.

[0127] Referring to Figures 10A to 10C, specific embodiments of the functional layers 222a and 222c in Figure 10 will be described. In embodiments D, D', and D'' of Figures 10A to 10C, through holes and / or recesses (grooves) are formed in the functional layers 222a and 222c corresponding to the upper surface 217u of the spacer 217.

[0128] Functional layers 222a and 222c are the first functional layer 222a and the second functional layer 222c on the first functional layer 222a. In other embodiments, functional layers 222a and 222c may consist of only one of the first functional layer 222a or the second functional layer 222c.

[0129] Referring to Figure 10A, a recess 222cr is formed in the second functional layer 222c corresponding to the first portion 222p1. That is, in embodiment D of Figure 10A, the first functional layer 222a is not removed, and only a portion of the second functional layer 222c is removed. The first functional layer 222a has the same thickness overall, but the second functional layer 222c is formed so that the thickness of the first portion 222p1 is thinner than the thickness of the second portion 222p2. As a result, the thickness tp1 of the functional layers 222a and 222c corresponding to the first portion 222p1 is thinner than the thickness tp2 of the functional layers 222a and 222c corresponding to the second portion 222p2.

[0130] Referring to Figure 10B, a through-hole 222op' is formed in the second functional layer 222c, corresponding to the first portion 222p1. That is, in embodiment D' of Figure 10B, the second functional layer 222c corresponding to the first portion 222p1 is removed. In other words, the first functional layer 222a is exposed through the through-hole 222op' in the second functional layer 222c. The counter electrode 223 makes direct contact with the first functional layer 222a exposed through the through-hole 222op', corresponding to the first portion 222p1.

[0131] Referring to Figure 10C, the second functional layer 222c is provided with a through hole 222op' corresponding to the first portion 222p1, and the first functional layer 222a is provided with a recess (groove) 222ar. That is, in embodiment D'' of Figure 10C, the second functional layer 222c corresponding to the first portion 222p1 is removed, and a portion of the first functional layer 222a is removed. As a result, the thickness tp1 of the functional layers 222a and 222c corresponding to the first portion 222p1 is thinner than the thickness tp2 of the functional layers 222a and 222c corresponding to the second portion 222p2.

[0132] Figures 11 and 12 are schematic cross-sectional views showing a part of a display device according to yet another embodiment of the present invention. Figures 11 and 12 correspond to modified parts C of Figure 6.

[0133] Referring to Embodiment C in Figure 11, the upper surface 217u of the spacer 217 is provided with a retraction portion 217r that is retracted in the direction of the pixel definition film 215, i.e., in the direction of the substrate 100. Such a retraction portion 217r is formed when a part of the spacer 217 is removed along with the particles PC (Figure 15) on the spacer 217. Corresponding to the retraction portion 217r of the spacer 217, through-holes 222op are provided in the functional layers 222a and 222c. The counter electrode 223 covers the through-holes 222op and the inner surface of the retraction portion 217r on the upper part of the spacer 217 and is in direct contact with the spacer 217.

[0134] Embodiment C''' in Figure 12 is similar to Figure 11, but differs in that instead of a recess 217r being formed in the spacer 217, the entire upper part of the spacer 217 is removed. If the particles PC (Figure 15) on the spacer 217 are formed to be the same width as or larger than the width of the upper surface 217u of the spacer 217, then the laser must be irradiated to be the same width as or larger than the width of the spacer 217, in which case part or all of the spacer 217 will be removed. Thus, the height h2 of the spacer 217 shown in Figure 12 may be formed to be lower than, for example, the height h1 of the spacer 217 shown in Figure 9 in the embodiments described above.

[0135] Functional layers 222a and 222c are both removed from the upper surface 217u of the spacer 217, and the cut surfaces forming the through-holes 222op of the functional layers 222a and 222c are coplanar with the upper surface 217u of the spacer 217. The counter electrode 223 may be in direct contact with the upper surface 217u of the spacer 217.

[0136] Figures 13 and 14 are schematic cross-sectional views showing a part of a display device according to yet another embodiment of the present invention.

[0137] The embodiment shown in Figure 13 differs from the previously described embodiment in that the spacer 217 has been completely removed compared to Figure 6. The remaining structure is the same as that of Figure 6, except for the removal of the spacer 217, and the differences will be explained below.

[0138] A first pixel P1 and a second pixel P2 are arranged on the substrate 100, and each of the first pixel P1 and second pixel P2 includes a first pixel electrode 221 and a second pixel electrode 221' that are separated from each other. The pixel definition film 215 has an opening OP-EA that exposes the central parts of the first pixel electrode 221 and the second pixel electrode 221'. The interlayer 222 is arranged on the first pixel electrode 221 and the second pixel electrode 221'. Of the interlayer 222, the first functional layer 222a and the second functional layer 222c, excluding the light-emitting layers 222b and 222b', are integrally provided over the entire surface of the display area DA so as to cover the pixel definition film 215.

[0139] The functional layers 222a and 222c may have through-holes 222op, corresponding to the pixel definition film 215 between the first pixel electrode 221 and the second pixel electrode 221'. That is, at least a portion of the functional layers 222a and 222c are removed on top of the pixel definition film 215. These through-holes 222op in the functional layers 222a and 222c correspond to the area where the spacer 217 in Figure 6 was located.

[0140] As mentioned above, by removing the particle PC formed on the spacer 217, and also removing the spacer 217 completely, the structure shown in Figure 13 is derived.

[0141] Since the counter electrode 223 is formed after the spacer 217 is removed, at least a portion of the counter electrode 223 is in direct contact with the upper surface 215u of the pixel definition film 215, which is exposed through the through-hole 222op.

[0142] Figure 14 shows a structure in which an input sensing layer TU is further arranged on top of the display layer DU in Figure 13. In Figure 14, the display layer DU is shown as the embodiment shown in Figure 13, but in Figure 14, the display layer DU of the previously described embodiment may also be used.

[0143] Referring to Figure 14, the input sensing layer TU is placed on top of the display layer DU. The input sensing layer TU is placed directly on top of the inorganic sealing layer 300. In one embodiment, the input sensing layer TU includes a planarized organic layer 400, a first insulating layer IL1, a first conductive layer CL1, a second insulating layer IL2, a second conductive layer CL2, and a third insulating layer IL3. The first conductive layer CL1 and the second conductive layer CL2 form sensing electrodes by making electrical contact with each other.

[0144] The planarizing organic layer 400 may be placed directly on the inorganic sealing layer 300. The planarizing organic layer 400 flattens the upper surface of the display layer DU so that the touch layer 410 of the input sensing layer TU is placed on the flattened surface.

[0145] In one embodiment of the present invention, the display device 1 includes an inorganic encapsulation layer 300 composed solely of an inorganic layer as the thin-film encapsulation layer TFE (Figure 2). Therefore, if the touch layer 410 is to be placed directly on the inorganic encapsulation layer 300, defects may occur if the upper surface of the display layer DU is not flattened. Thus, by interposing a planarizing organic layer 400 between the inorganic encapsulation layer 300 and the touch layer 410, the touch layer 410 can be placed on a flattened surface.

[0146] Up to this point, the invention has mainly described display devices, but the invention is not limited to these. For example, a manufacturing method for producing such a display device can also be said to fall within the scope of the invention.

[0147] Figures 15 to 17 are schematic cross-sectional views illustrating a part of a method for manufacturing a display device according to yet another embodiment of the present invention.

[0148] Referring to Figure 15, various layers and conductive patterns for forming the display layer DU are arranged on the substrate 100. Referring to Figure 6, the layers stacked upwards (for example, in the +z direction) relative to the substrate 100 are described sequentially, and the manufacturing process follows the order described in Figure 6. Therefore, the explanation of the manufacturing process for the display layer DU below will follow the explanation in Figure 6.

[0149] As shown in Figure 15, the pixel electrode 221 and the pixel definition film 215 can be formed first, and then the intermediate layer 222 (Figure 6) can be formed on top of the pixel electrode 221 and the pixel definition film 215. The intermediate layer 222 is formed by sequentially forming a first functional layer 222a, an emissive layer 222b, and a second functional layer 222c. The first functional layer 222a and the second functional layer 222c are arranged in common across the entire surface of the display area DA and are formed, for example, using an open mask. On the other hand, the emissive layer 222b must be patterned and formed for each pixel P, and is formed using a first mask M1 in which an aperture is formed corresponding to each pixel P. For example, the first mask M1 is an FMM.

[0150] The first mask M1 is in direct contact with the upper surface 217u of the spacer 217 during the formation of the light-emitting layer 222b, thereby preventing sagging of the first mask M1. Next, as shown in Figure 15, the first mask M1 is separated from the display layer DU. During this process, some of the first functional layer 222a and the second functional layer 222c formed on the upper surface 217u of the spacer 217 may remain as residue 222rs on the surface Ml of the first mask M1 that is in direct contact with the upper surface 217u of the spacer 217. At the same time, impurities such as particles PC are generated on the upper surface 217u of the spacer 217 that is in direct contact with the first mask M1 during the process of tearing off some of the first functional layer 222a and the second functional layer 222c. If particles PC flow into the light-emitting region of the pixel P in a subsequent process, it will cause defects in the pixel P and degrade the light-emitting quality. Furthermore, if the particle PC remains on the upper surface 217u of the spacer 217, it destabilizes the step coverage of the inorganic sealing layer 300 placed on top of the spacer 217, increasing the probability of crack formation, which leads to poor sealing characteristics.

[0151] Therefore, in the method for manufacturing a display device according to one embodiment of the present invention, as shown in Figure 16 or Figure 17, the defect rate due to particle PC, which is an impurity formed during the manufacturing process, is minimized by using a laser L to remove the particle PC formed on the spacer 217 before forming the counter electrode 223.

[0152] In Figure 16 or Figure 17, before removing the particles PC using the laser L, the substrate 100 is first inverted (turned upside down) so that its back surface faces upward (for example, in the +z direction). This positions the intermediate layer 222 so that it faces vertically (for example, in the -z direction).

[0153] Referring to Figure 16, with the substrate 100 covered, the laser L is shone toward the particle PC. For example, the laser L can be a beam laser, a spot laser, etc., and a variety of wavelengths can be used, ranging from infrared (IR) to ultraviolet (UV). Furthermore, the parts removed by the laser L can be varied, such as removing everything through etching or removing only a portion through ablation.

[0154] Particle PCs in the area irradiated by the laser L fall off vertically (for example, in the -z direction) due to gravity. By proceeding with the laser L process with the substrate 100 covered in this way, the fallen particles PCs naturally fall in the direction of gravity, preventing the display layer DU from being contaminated by the fallen particles PCs. In one embodiment, by placing a separate particle PC capture device at the bottom of the substrate 100, it is possible to prevent the inside of the chamber from being contaminated by the fallen particles PCs.

[0155] By varying the degree to which the laser L is irradiated during the laser process, various structures corresponding to Figures 6 to 14 can be realized. In one embodiment, when removing the particle PC, if only the upper particle PC is removed without removing the spacer 217, a structure like that shown in Figures 6 to 9 is formed. In another embodiment, when removing the particle PC, if all or part of the spacer 217 is removed together, a structure like that shown in Figures 11 to 14 is formed.

[0156] In the case of Figure 16, since the laser L must be directed at the particle PC, for example, a spot laser or similar device is used for laser L.

[0157] In another embodiment, as shown in Figure 17, a second mask M2 is positioned opposite the substrate 100, and a laser L can be irradiated simultaneously onto a plurality of spacers 217 positioned on the display area DA through a through-hole M2-OP formed in the second mask M2. The through-hole M2-OP formed in the second mask M2 is patterned to correspond to the spacers 217.

[0158] As shown in Figure 4 above, multiple spacers 217 are arranged on the display area DA, and are regularly spaced apart. Therefore, the second mask M2 has through-holes M2-OP corresponding to each spacer 217, and when the entire surface of the substrate 100 is irradiated with a laser L through the second mask M2, the laser L is irradiated only on the spacers 217 through the through-holes M2-OP, thereby removing the particles PC formed on multiple spacers 217 all at once and reducing the process time.

[0159] As shown in Figure 16 or Figure 17, after removing the particles PC on the spacer 217, a counter electrode 223 is formed on the interlayer 222 as shown in Figure 6 or Figure 13. The counter electrode 223 is formed over the entire surface of the display area DA of the substrate 100. As in the embodiments described in Figures 6 to 14 above, the counter electrode 223 can directly contact the spacer 217 or the pixel definition film 215 in the area where the particles PC on the spacer 217 have been removed.

[0160] Next, as shown in Figure 6 or Figure 13, an inorganic encapsulation layer 300 is formed on the counter electrode 223. The inorganic encapsulation layer 300 is formed, for example, by CVD. In one embodiment of the present invention, a display apparatus 1 is provided which has a thin film encapsulation layer TFE formed only of an inorganic encapsulation layer 300. In comparison, when the thin film encapsulation layer has a multi-layer structure comprising at least one organic film and at least one inorganic film, there are problems such as an increase in the number of processes for the display apparatus, an increase in cost, an increase in the thickness of the display apparatus itself, and a decrease in flexibility. In one embodiment of the present invention, the display apparatus 1 is provided which has a thin film encapsulation layer TFE formed only of an inorganic encapsulation layer 300, thereby simplifying the process conditions and realizing a display apparatus with reduced thickness and improved flexibility.

[0161] Although the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely illustrative, and those skilled in the art will understand that a wider variety of modifications and other embodiments are possible. Therefore, the true scope of technical protection of the present invention must be determined by the technical idea of ​​the claims. [Explanation of Symbols]

[0162] 100: Circuit board 211: Pixel electrode 215: Pixel Definition Film 217: Spacer 222: Intermediate level 222op: Through Hole 222a: 1st functional layer 222b: Emitting layer 222c: 2nd functional layer 223: Counter electrode 300: Inorganic sealing layer PC: Particles 400: Planarized organic layer 410: Touch Layer TU: Input Sensing Layer Du:Display layer

Claims

1. A first pixel electrode and a second pixel electrode are arranged on a substrate, separated from each other, A pixel definition film having an opening that exposes the central portions of the first pixel electrode and the second pixel electrode, The first pixel electrode, the second pixel electrode, and the intermediate layer disposed on the pixel definition film, A counter electrode is disposed on the intermediate layer opposite to the first pixel electrode and the second pixel electrode, An inorganic sealing layer disposed on the counter electrode, A spacer is disposed between the pixel definition film and the counter electrode, corresponding to the space between the first pixel electrode and the second pixel electrode, Equipped with, The intermediate layer has through holes that expose at least a portion of the upper surface of the spacer between the first pixel electrode and the second pixel electrode, The counter electrode is in direct contact with the upper surface of the spacer through the through hole. The intermediate layer is provided over the entire surface of the display area, excluding the through-hole, in a display device.

2. The display device according to claim 1, wherein the spacer is positioned to be surrounded by red, green, and blue pixels.

3. The display device according to claim 1, wherein the intermediate layer is not disposed on the upper surface of the spacer.

4. The display device according to claim 3, wherein the counter electrode is in direct contact with the upper surface of the spacer through the through hole.

5. A first pixel electrode and a second pixel electrode are arranged on a substrate, separated from each other, A pixel definition film having an opening that exposes the central portions of the first pixel electrode and the second pixel electrode, An intermediate layer disposed on the first pixel electrode, the second pixel electrode, and the pixel definition film, having through holes that expose at least a portion of the upper surface of the pixel definition film between the first pixel electrode and the second pixel electrode, A counter electrode is disposed on the intermediate layer opposite to the first pixel electrode and the second pixel electrode, An inorganic sealing layer disposed on the counter electrode, Equipped with, The spacer is further disposed between the pixel defining film and the counter electrode, corresponding to the space between the first pixel electrode and the second pixel electrode, The spacer has a recessed portion on its upper surface that is pulled in toward the substrate, in a display device.

6. The display device according to claim 5, wherein the counter electrode is in direct contact with the inner surface of the retraction portion.

7. The display apparatus according to claim 1 or 5, wherein the thickness of the inorganic sealing layer is 200 nm to 2 μm.

8. The display apparatus according to claim 7, wherein the inorganic sealing layer has a multilayer structure of at least two layers.

9. The display apparatus according to claim 8, wherein the inorganic sealing layer comprises a first layer and a second layer that are sequentially stacked, and the first layer and the second layer contain the same substance but have different composition ratios.

10. The display apparatus according to claim 9, wherein the thickness of the first layer and the second layer is 50 nm to 500 nm, respectively.

11. The system further comprises an input sensing layer disposed on the inorganic sealing layer, The aforementioned input sensing layer is A planarized organic layer disposed on the inorganic sealing layer, An inorganic insulating layer disposed on the planarized organic layer, The display device according to claim 1 or 5, further comprising a sensing electrode on the inorganic insulating layer.

12. The display apparatus according to claim 11, wherein the planarized organic layer is directly interposed between the inorganic sealing layer and the inorganic insulating layer.

13. A pixel circuit layer comprising a thin-film transistor and a planarization layer on the thin-film transistor is formed on a substrate. A pixel electrode is formed on the aforementioned pixel circuit layer, A pixel definition film having an opening that exposes the central portion of the pixel electrode is formed on the pixel electrode. A spacer is formed on the pixel definition film, An intermediate layer is formed across the pixel electrode, the pixel definition film, and the spacer. Remove at least a portion of the intermediate layer formed on the spacer, A counter electrode is formed on the intermediate layer, Forming an inorganic sealing layer on the counter electrode, Includes, A method for manufacturing a display device, wherein particles are formed on the spacer during the formation of the intermediate layer.

14. Removing at least a portion of the intermediate layer means A method for manufacturing a display device according to claim 13, comprising removing at least a portion of the intermediate layer and simultaneously removing particles formed on the spacer.

15. The method for manufacturing a display device according to claim 14, wherein removing at least a portion of the intermediate layer includes using a laser to remove the particles formed on the spacer.

16. Removing at least a portion of the intermediate layer means Covering the substrate such that the surface of the intermediate layer faces vertically, A method for manufacturing a display device according to claim 13, comprising irradiating a laser toward particles formed on the spacer.

17. Removing at least a portion of the intermediate layer means A mask having a through portion corresponding to the spacer is placed opposite the intermediate layer, and A method for manufacturing a display device according to claim 16, further comprising irradiating particles formed on the spacer through the through portion with a laser.

18. Removing at least a portion of the intermediate layer means The method for manufacturing a display device according to claim 16, further comprising removing at least a portion of the spacer together.

19. The method for manufacturing a display device according to claim 18, wherein the counter electrode is formed to be in direct contact with the upper surface of the spacer.

20. The method for manufacturing a display device according to claim 18, wherein the counter electrode is formed to be in direct contact with the upper surface of the pixel definition film corresponding to the portion where the spacer is formed.

21. The method for manufacturing a display device according to claim 13, wherein the inorganic sealing layer is formed to a thickness of 200 nm to 2 μm.

22. The method for manufacturing a display device according to claim 21, wherein the inorganic sealing layer is formed by a multilayer structure of at least two or more layers.

23. Forming the inorganic sealing layer includes forming a first inorganic layer and forming a second inorganic layer. The method for manufacturing a display apparatus according to claim 21, wherein the first inorganic layer and the second inorganic layer are formed to have different composition ratios by varying the amount of gas injected into the chamber.

24. The method further includes forming an input sensing layer on the inorganic sealing layer, Forming the aforementioned input sensing layer means Forming a planarized layer on the inorganic sealing layer, and A method for manufacturing a display device according to claim 13, comprising forming a touch layer on the planarized organic layer.

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