Ceria-based slurry compositions for selective and non-selective CMP of silicon dioxide, silicon nitride, and polysilicon

Abstract

The present invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffering agent; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The present invention also provides a method of chemically mechanically polishing substrates, particularly substrates comprising silicon oxide, silicon nitride, and polysilicon, using the polishing composition of the present invention.

Description

[Background technology]

[0001] Background of the Invention

[0001] In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconducting, and dielectric materials are deposited onto or removed from the substrate surface. As layers of material are sequentially deposited onto and removed from the substrate, the top surface of the substrate may become non-planar, requiring planarization. Planarization, or "polishing," of a surface is the process of removing material from the surface of a substrate to form a nearly uniform and flat surface. Planarization is useful for removing undesirable surface topography and surface defects, such as rough surfaces, aggregated material, crystal lattice damage, scratches, and contaminated layers or materials. Planarization is also useful for forming features on a substrate by removing excess deposited material used to fill features and providing a flat surface for subsequent metallization and processing levels.

[0002]

[0002] Compositions and methods for planarizing or polishing the surface of a substrate are well known in the art. Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a common technique used to planarize a substrate. CMP utilizes a chemical composition known as a CMP composition, or more simply a polishing composition (also called a polishing slurry), to selectively remove material from the substrate. The polishing composition is typically applied to the substrate by bringing the surface of the substrate into contact with a polishing pad (e.g., a polishing cloth or polishing disc) saturated with the polishing composition. Polishing of the substrate is typically further facilitated by the chemical activity of the polishing composition and / or the mechanical activity of abrasives suspended in the polishing composition or incorporated into a polishing pad (e.g., a fixed abrasive polishing pad).

[0003]

[0003] As the size of integrated circuits decreases and the number of integrated circuits on a chip increases, the components that make up the circuit must be placed closer together to fit into the limited space available on a typical chip. Effective isolation between circuits is important to ensure optimal semiconductor performance. To this end, shallow trenches are etched into the semiconductor substrate and filled with insulating material to isolate the active regions of the integrated circuit. More specifically, shallow trench isolation (STI) is a process in which a silicon nitride layer is formed on a silicon substrate, shallow trenches are formed by etching or photolithography, and dielectric layers are deposited to fill the trenches. Because there is variation in the depth of the trenches formed in this way, it is usually necessary to deposit an excess of dielectric material on the substrate to ensure complete filling of all trenches. The dielectric material (e.g., silicon oxide) conforms to the topography of the lower layers of the substrate. Thus, the surface of the substrate is characterized by raised regions of the upper oxide layer between the trenches, which are called pattern oxides. Pattern oxides are characterized by the height of the step of the excess oxide dielectric material outside the trenches. Excess dielectric material is typically removed by the CMP process, providing an even flatter surface for further processing. As the patterned oxide is polished and approaches surface flatness, the oxide layer comes to be called a blanket oxide.

[0004]

[0004] Polishing compositions can be characterized according to their polishing speed (i.e., removal speed) and their planarization efficiency. Polishing speed refers to the rate at which material is removed from the surface of the substrate and is usually expressed in units of length (thickness) per unit time (e.g., angstroms (Å) per minute). Planarization efficiency relates to the reduction in step height relative to the amount of material removed from the substrate. Specifically, the polishing surface, e.g., the polishing pad, must first contact the "high points" of the surface and remove material to form a flat surface. A process that achieves a flat surface with less material removal is considered more efficient than a process that requires more material removal to achieve flatness.

[0005]

[0005] In many cases, the desired removal rates of silicon oxide, silicon nitride, and polysilicon can vary depending on the application. For example, in some cases, the silicon oxide pattern may be rate-limiting for the dielectric polishing process in the STI process, and therefore, it is desirable to increase the removal rate of the silicon oxide pattern in order to increase the device throughput. However, if the blanket removal rate is too fast, the oxide in the exposed trenches will be over-polished, resulting in trench erosion and an increase in the device defect rate. Therefore, in some cases (for example, in polishing applications), it is desirable that the removal rates of silicon oxide, silicon nitride, and polysilicon have similar selectivity, for example, 1:1:1.

[0006]

[0006] Although silicon oxide, silicon nitride, and polysilicon can be removed with approximately 1:1:1 selectivity, there is still a need for compositions and methods for chemical mechanical polishing that can be adjusted to selectively remove silicon oxide, silicon nitride, and / or polysilicon compared to other dielectric materials.

[0007]

[0007] The present invention provides such polishing compositions and methods. These and other advantages of the present invention, as well as additional features of the invention, will become apparent from the description of the invention provided herein. [Overview of the Initiative]

[0008] Summary of the Invention

[0008] The present invention provides a chemical mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffering agent; and (d) water, wherein the polishing composition has a pH of about 6 to about 9.

[0009]

[0009] The present invention further provides a method for chemically polishing a substrate, comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9; (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition relative to the substrate to polish at least a portion of the substrate. [Modes for carrying out the invention]

[0010] Detailed description of the present invention

[0010] The present invention provides a chemical mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9.

[0011]

[0011] The chemical mechanical polishing composition contains ceria abrasive particles. As used herein, the term “ceria abrasive particles” can be used interchangeably with “abrasive,” “ceria particles,” or “ceria abrasive.” As is well known, ceria is an oxide of the rare earth metal cerium and is also known as ceric oxide, cerium oxide (e.g., cerium(IV) oxide), or cerium dioxide. Cerium(IV) oxide (CeO2) can be formed by calcining cerium oxalate or cerium hydroxide. Cerium also forms cerium(III) oxide, e.g., Ce2O3. Ceria abrasive particles may contain one or more of these oxides or other oxides of ceria.

[0012]

[0012] The ceria abrasive particles can be of any suitable type. In one embodiment, the ceria abrasive particles include, essentially consist of, calcined ceria particles, wet ceria particles, wet process ceria particles, or a combination thereof. In a preferred embodiment, the ceria abrasive particles include wet ceria particles or wet process ceria particles.

[0013]

[0013] As used herein, “wet ceria particles” or “wet process ceria particles” (collectively referred to herein as “wet process” ceria particles) refers to ceria prepared by precipitation, condensation polymerization, or similar processes (unlike, for example, fumed or exothermic ceria). Polishing compositions of the present invention containing wet process ceria particles have been found to exhibit lower defect rates when used to polish substrates according to the methods of the present invention. While we do not wish to be bound by any particular theory, it is believed that wet process ceria comprises substantially spherical ceria particles and / or smaller aggregated ceria particles, thereby resulting in lower substrate defect rates when used in the methods of the present invention. Examples of wet process ceria include HC30® and HC60® ceria, commercially available from Rhodia, and Hybrid-30, commercially available from ANP Co., Ltd.

[0014]

[0014] The ceria abrasive particles can have any suitable average particle size (i.e., average particle diameter). If the average particle size of the ceria abrasive particles is too small, the polishing composition may not exhibit a sufficient removal rate. Conversely, if the average particle size of the ceria abrasive particles is too large, the polishing composition may exhibit undesirable polishing performance, such as a poor substrate defect rate. Therefore, the ceria abrasive particles can have an average particle size of about 10 nm or more, for example, about 15 nm or more, about 20 nm or more, about 25 nm or more, about 30 nm or more, about 35 nm or more, about 40 nm or more, about 45 nm or more, or about 50 nm or more. Alternatively or in addition to this, the ceria abrasive particles can have an average particle size of about 1,000 nm or less, for example, about 750 nm or less, about 500 nm or less, about 250 nm or less, about 150 nm or less, about 100 nm or less, about 75 nm or less, or about 50 nm or less. Therefore, the ceria abrasive particles can have an average particle size limited by any two of the aforementioned endpoints. For example, ceria abrasive particles can have an average particle size of approximately 10 nm to 1,000 nm, such as approximately 10 nm to 750 nm, approximately 15 nm to 500 nm, approximately 20 nm to 250 nm, approximately 20 nm to 150 nm, approximately 25 nm to 150 nm, approximately 25 nm to 100 nm, approximately 50 nm to 150 nm, or approximately 50 nm to 100 nm. In the case of spherical ceria abrasive particles, the particle size is the diameter of the particle. In the case of non-spherical ceria abrasive particles, the particle size is the diameter of the smallest sphere that contains the particle. The particle size of ceria abrasive particles can be measured using any suitable technique, for example, laser diffraction. Suitable particle size measuring instruments are available, for example, from Malvern Instruments (Malvern, UK).

[0015]

[0015] In some embodiments, the ceria abrasive particles of the polishing composition exhibit a multimodal particle size distribution. As used herein, the term “multimodal” means that the ceria abrasive particles exhibit an average particle size distribution having at least two maximum values ​​(e.g., two or more maximum values, three or more maximum values, four or more maximum values, or five or more maximum values). Preferably, in these embodiments, the ceria abrasive particles exhibit a bimodal particle size distribution, i.e., the ceria abrasive particles exhibit a particle size distribution having two average particle size maximum values. The terms “maximum and maxima” mean one or more peaks in the particle size distribution. One or more peaks correspond to the average particle size of the ceria abrasive particles described herein. Therefore, for example, a plot of the number of particles against particle size would reflect a bimodal particle size distribution, with the first peak in the particle size range of approximately 75 nm to 150 nm, e.g., approximately 80 nm to 140 nm, approximately 85 nm to 130 nm, or approximately 90 nm to 120 nm, and the second peak in the particle size range of approximately 25 nm to 70 nm, e.g., approximately 30 nm to 65 nm, approximately 35 nm to 65 nm, or approximately 40 nm to 60 nm. Ceria abrasive particles having a multimodal particle size distribution can be obtained by combining two different types of ceria abrasive particles, each having a unimodal particle size distribution.

[0016] The ceria abrasive particles are preferably colloidal stable in the polishing composition of the present invention. The term "colloid" means a suspension of ceria abrasive particles in an aqueous carrier (e.g., water). Colloidal stability refers to the suspension being maintained over time. In the context of the present invention, when the abrasive is placed in a graduated cylinder of 100 mL and left without stirring for 2 hours, the difference between the concentration of the particles in the bottom 50 mL of the graduated cylinder ([B] (as g / mL)) and the concentration of the particles in the upper 50 mL of the graduated cylinder ([T] (as g / mL)), divided by the initial concentration of the particles in the abrasive composition, is 0.5 or less (i.e., {[B] - [T]} / [C] ≤ 0.5), the abrasive is considered to be colloidal stable. More preferably, the value of [B] - [T] / [C] is 0.3 or less, and most preferably 0.1 or less.

[0017]

[0017] The polishing composition may contain ceria abrasive particles in any appropriate concentration. If the polishing composition of the present invention contains a very small amount of ceria abrasive particles, the composition may not exhibit sufficient removal rate. In contrast, if the polishing composition contains too much ceria abrasive particles, the polishing composition may exhibit undesirable polishing performance and / or may be cost-ineffective and / or may lack stability. The polishing composition contains ceria abrasive particles in about 10% by weight or less, for example, about 9% by weight or less, about 8% by weight or less, about 7% by weight or less, about 6% by weight or less, about 5% by weight or less, about 4% by weight or less, about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.9% by weight or less, about 0.8% by weight or less, about 0.7% by weight or less, about 0.6% by weight or less, or about 0.5% by weight or less. Alternatively, or in addition to the above, the polishing composition may contain about 0.001% by weight or more of ceria abrasive particles, for example, about 0.005% by weight or more, about 0.01% by weight or more, about 0.05% by weight or more, or about 0.1% by weight or more of ceria abrasive particles. Thus, ceria abrasive particles can be present in the polishing composition at concentrations limited by any two of the aforementioned endpoints. For example, the polishing composition may contain ceria abrasive particles in concentrations of about 0.001% by weight to about 10% by weight, for example, about 0.001% by weight to about 9% by weight, about 0.005% by weight to about 8% by weight, about 0.01% by weight to about 7% by weight, about 0.05% by weight to about 6% by weight, about 0.1% by weight to about 5% by weight, about 0.5% by weight to about 5% by weight, about 0.5% by weight to about 4% by weight, about 1% by weight to about 3% by weight, or about 1.5% by weight to about 2.5% by weight. In one embodiment, the polishing composition may contain, at the point of use, about 0.1% to about 1% by weight, or about 0.1% to about 0.5% by weight, ceria abrasive particles. In another embodiment, the polishing composition, as a concentrate, contains about 1% to about 3% by weight (e.g., about 1.2% by weight or about 1.6% by weight) of ceria abrasive particles.

[0018]

[0018] The chemical mechanical polishing composition comprises a cationic polymer. The cationic polymer may include any suitable cationic monomer that can undergo free radical polymerization and / or addition polymerization. In some embodiments, the cationic polymer may be N-vinylimidazole, 2-(dimethylamino)ethyl acrylate ("DMAEA"), 2-(dimethylamino)ethyl methacrylate ("DMAEM"), 3-(dimethylamino)propyl methacrylamide ("DMAPMA"), 3-(dimethylamino)propyl acrylamide ("DMAPA"), 3-methacrylamidepropyl-trimethyl-ammonium chloride ("MAPTAC"), 3-acrylamidepropyl-trimethyl-ammonium chloride ("APTAC"), diallyldi The materials include cationic monomers selected from methylammonium chloride ("DADMAC"), 2-(acryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEA.MCQ"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), N,N-dimethylaminoethyl acrylate benzyl chloride ("DMAEA.BCQ"), N,N-dimethylaminoethyl methacrylate benzyl chloride ("DMAEM.BCQ"), their salts, and combinations thereof. In certain embodiments, the materials include cationic monomers selected from N-vinylimidazole, diallyldimethylammonium chloride ("DADMAC"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), their salts, and combinations thereof. In other words, the cationic polymer may be polyvinylimidazole, polyDADMAC, polyMADQUAT (e.g., polyDMAEM.MCQ), salts thereof, or combinations thereof. In preferred embodiments, the polishing composition comprises polyMADQUAT and optionally an additional cationic polymer selected from polyvinylimidazole and polyDADMAC.

[0019]

[0019] The polishing composition can contain any suitable amount of a cationic polymer. The polishing composition can contain a cationic polymer at about 10 ppm or more, for example, at about 15 ppm or more, about 20 ppm or more, about 25 ppm or more, about 30 ppm or more, about 35 ppm or more, or about 40 ppm or more. Instead of or in addition to this, the polishing composition can contain a cationic polymer at about 1000 ppm or less, for example, at about 800 ppm or less, about 600 ppm or less, about 400 ppm or less, about 200 ppm or less, or about 100 ppm or less. Thus, the polishing composition can contain a cationic polymer in an amount limited by any two of the aforementioned endpoints. For example, the polishing composition can contain a cationic polymer from about 10 ppm to about 1000 ppm, for example, from about 10 ppm to about 800 ppm, from about 10 ppm to about 600 ppm, from about 10 ppm to about 400 ppm, from about 10 ppm to about 200 ppm, from about 10 ppm to about 100 ppm, from about 25 ppm to about 1000 ppm, from about 25 ppm to about 800 ppm, from about 25 ppm to about 600 ppm, from about 25 ppm to about 400 ppm, from about 25 ppm to about 200 ppm, or from about 25 ppm to about 100 ppm.

[0020]

[0020] The cationic polymer can exist as any suitable structural type. For example, the cationic polymer can exist as an alternating polymer, a random polymer, a block polymer, a graft polymer, a linear polymer, a branched polymer, or a combination thereof. The cationic polymer can contain a single monomer unit or any suitable number of different monomer units. For example, the cationic polymer can contain two different monomer units, three different monomer units, four different monomer units, five different monomer units, or six different monomer units. The cationic monomers of the cationic polymer can exist in any suitable concentration and in any suitable ratio. In some embodiments, the cationic polymer further contains a monomer selected from methacrylamide, acrylamide, and combinations thereof.

[0021]

[0021] Cationic polymers can have any suitable weight-average molecular weight. Cationic polymers can have a weight-average molecular weight of about 150 g / mol or more, for example, about 300 g / mol or more, about 500 g / mol or more, about 600 g / mol or more, about 750 g / mol or more, about 1000 g / mol or more, about 1500 g / mol or more, about 2000 g / mol or more, about 2500 g / mol or more, about 3000 g / mol or more, about 3500 g / mol or more, about 4000 g / mol or more, about 4500 g / mol or more, about 5000 g / mol or more, about 5500 g / mol or more, about 6000 g / mol or more, about 6500 g / mol or more, about 7000 g / mol or more, or about 7500 g / mol or more. Alternatively, or in addition to the above, cationic polymers may have a weight-average molecular weight of about 10,000 g / mol or less, for example, about 9,000 g / mol or less, about 8,000 g / mol or less, about 7,500 g / mol or less, about 7,000 g / mol or less, about 6,500 g / mol or less, about 6,000 g / mol or less, about 5,500 g / mol or less, about 5,000 g / mol or less, about 4,500 g / mol or less, about 4,000 g / mol or less, about 3,500 g / mol or less, about 3,000 g / mol or less, about 2,500 g / mol or less, or about 2,000 g / mol or less. Thus, cationic polymers may have a weight-average molecular weight limited by any two of the aforementioned endpoints. For example, cationic polymers have a weight-average molecular weight of approximately 150 g / mol to approximately 10,000 g / mol, for example, approximately 300 g / mol to approximately 9,000 g / mol, approximately 500 g / mol to approximately 8,000 g / mol, approximately 150 g / mol to approximately 7,000 g / mol, approximately 150 g / mol to approximately 6,000 g / mol, approximately 150 g / mol to approximately 5,000 g / mol, and approximately 150 g / mol to It can have a weight-average molecular weight of approximately 2000 g / mol, approximately 1000 g / mol to approximately 10000 g / mol, approximately 1000 g / mol to approximately 9000 g / mol, approximately 1000 g / mol to approximately 8000 g / mol, approximately 1000 g / mol to approximately 7000 g / mol, approximately 1000 g / mol to approximately 6000 g / mol, or approximately 1000 g / mol to approximately 5000 g / mol.

[0022]

[0022] The chemical mechanical polishing composition includes a buffer. The buffer may be any suitable compound or combination of compounds that can maintain the pH of the polishing composition at about 3 to about 9 (for example, a pH of about 6 to about 9). Generally, the buffer is an amine compound containing 1 to 5 nitrogen atoms. For example, the buffer may be a heterocyclic or heteroaromatic amine compound containing 1 to 5 nitrogen atoms. In some embodiments, the buffering agent includes heterocyclic or heteroaromatic amines selected from pyrrole, pyrrolidine, carbazole, isoindole, indole, pyrroline, indidine, indoline, pyridine, piperidine, quinolidine, isoquinoline, quinoline, naphthyridine, imidazole, imidazoline, imidazolidine, tetrazole, triazole, benimidazole, purine, benzoxazole, benzthiazole, isothiazole, isoxazole, thiazole, oxazole, morpholine, thiomorpholine, pyrazole, pyrazoline, pteridine, triazine, pyrimidine, pyrazine, piperazine, indazole, pyridazine, and combinations thereof. In certain embodiments, the buffering agent is benzotriazole, 5-aminotetrazole, or a combination thereof.

[0023]

[0023] The polishing composition may contain any appropriate amount of buffer. The polishing composition may contain about 25 ppm or more of buffer, for example, about 50 ppm or more, about 100 ppm or more, or about 200 ppm or more of buffer. Alternatively or in addition to this, the polishing composition may contain about 5000 ppm or less of buffer, for example, about 4000 ppm or less, about 3000 ppm or less, about 2000 ppm or less, or about 1000 ppm or less of buffer. Thus, the polishing composition may contain buffer in an amount limited by any two of the aforementioned endpoints. For example, a polishing composition may contain a buffering agent ranging from approximately 25 ppm to approximately 5000 ppm, such as approximately 25 ppm to approximately 400 ppm, approximately 25 ppm to approximately 3000 ppm, approximately 25 ppm to approximately 2000 ppm, approximately 25 ppm to approximately 1000 ppm, approximately 50 ppm to approximately 5000 ppm, approximately 50 ppm to approximately 4000 ppm, approximately 50 ppm to approximately 3000 ppm, approximately 50 ppm to approximately 2000 ppm, approximately 50 ppm to approximately 1000 ppm, approximately 100 ppm to approximately 5000 ppm, or approximately 100 ppm to approximately 1000 ppm.

[0024]

[0024] In some embodiments, the polishing composition further comprises a nonionic polymer. Thus, in some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a nonionic polymer; and (e) water, wherein the polishing composition has a pH of about 6 to about 9.

[0025]

[0025] The nonionic polymer can be any suitable polymer that does not have a cationic or anionic charge at a pH of about 6 to about 9 (e.g., a pH of about 7 to about 9). In some embodiments, the nonionic polymer is selected from polyalkylene glycols, polyetheramines, polyethylene oxide / polypropylene oxide copolymers, polyacrylamides, polyvinylpyrrolidone, siloxane polyalkylene oxide copolymers, hydrophobic modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and combinations thereof. In certain embodiments, the nonionic polymer is polyvinylpyrrolidone, polyalkylene glycol (e.g., polyethylene glycol (PEG) or polypropylene oxide (PPO)), polyethylene oxide / polypropylene oxide copolymer, or a combination thereof. In preferred embodiments, the nonionic polymer is polyethylene glycol (PEG).

[0026]

[0026] The nonionic polymer can have any suitable weight-average molecular weight. The nonionic polymer may have a weight-average molecular weight of about 400 g / mol or more, for example, about 500 g / mol or more, about 600 g / mol or more, about 750 g / mol or more, about 1000 g / mol or more, about 1500 g / mol or more, about 2000 g / mol or more, about 2500 g / mol or more, about 3000 g / mol or more, about 3500 g / mol or more, about 4000 g / mol or more, about 4500 g / mol or more, about 5000 g / mol or more, about 5500 g / mol or more, about 6000 g / mol or more, about 6500 g / mol or more, about 7000 g / mol or more, or about 7500 g / mol or more. Alternatively, or in addition to the above, nonionic polymers may have a weight-average molecular weight of about 10,000 g / mol or less, for example, about 9,000 g / mol or less, about 8,000 g / mol or less, about 7,500 g / mol or less, about 7,000 g / mol or less, about 6,500 g / mol or less, about 6,000 g / mol or less, about 5,500 g / mol or less, about 5,000 g / mol or less, about 4,500 g / mol or less, about 4,000 g / mol or less, about 3,500 g / mol or less, about 3,000 g / mol or less, about 2,500 g / mol or less, or about 2,000 g / mol or less. Thus, nonionic polymers may have a weight-average molecular weight limited by any two of the aforementioned endpoints. For example, nonionic polymers can have a weight-average molecular weight of approximately 400 g / mol to approximately 10,000 g / mol, such as approximately 400 g / mol to approximately 9,000 g / mol, approximately 400 g / mol to approximately 8,000 g / mol, approximately 400 g / mol to approximately 7,000 g / mol, approximately 400 g / mol to approximately 6,000 g / mol, approximately 400 g / mol to approximately 5,000 g / mol, approximately 1,000 g / mol to approximately 10,000 g / mol, approximately 1,000 g / mol to approximately 9,000 g / mol, approximately 1,000 g / mol to approximately 8,000 g / mol, approximately 1,000 g / mol to approximately 7,000 g / mol, approximately 1,000 g / mol to approximately 6,000 g / mol, or approximately 1,000 g / mol to approximately 5,000 g / mol.

[0027]

[0027] The polishing composition may contain any appropriate amount of nonionic polymer, if present. The polishing composition may contain about 25 ppm or more of nonionic polymer, for example, about 50 ppm or more, about 100 ppm or more, or about 200 ppm or more of nonionic polymer. Alternatively or in addition to this, the polishing composition may contain about 5000 ppm or less of nonionic polymer, for example, about 4000 ppm or less, about 3000 ppm or less, about 2000 ppm or less, or about 1000 ppm or less of nonionic polymer. Thus, the polishing composition may contain nonionic polymer in an amount limited by any two of the aforementioned endpoints. For example, the polishing composition may contain nonionic polymers in concentrations of approximately 25 ppm to 5000 ppm, such as approximately 25 ppm to 400 ppm, approximately 25 ppm to 3000 ppm, approximately 25 ppm to 2000 ppm, approximately 25 ppm to 1000 ppm, approximately 50 ppm to 5000 ppm, approximately 50 ppm to 4000 ppm, approximately 50 ppm to 3000 ppm, approximately 50 ppm to 2000 ppm, approximately 50 ppm to 1000 ppm, approximately 100 ppm to 5000 ppm, or approximately 100 ppm to 1000 ppm.

[0028]

[0028] In some embodiments, the polishing composition further comprises a cationic surfactant. Accordingly, in some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially comprising, or comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a cationic surfactant; and (e) water, wherein the polishing composition has a pH of about 6 to about 9.

[0029]

[0029] The cationic surfactant can be any suitable surfactant that is cationic at a neutral pH (i.e., pH of about 7). Generally, cationic surfactants include quaternary ammonium salts. For example, the cationic surfactant can be an alkylammonium salt such as p-toluenesulfonate alkylammonium or alkylammonium chloride. In certain embodiments, the cationic surfactant is selected from N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride, (oxydi-2,1-ethanediyl)bis(cocoalkyl)dimethylammonium dichloride, their salts, and combinations thereof.

[0030]

[0030] The polishing composition may contain any appropriate amount of cationic surfactant, if present. The polishing composition may contain about 10 ppm or more of cationic polymer, for example, about 15 ppm or more, about 20 ppm or more, about 25 ppm or more, about 30 ppm or more, about 35 ppm or more, or about 40 ppm or more of cationic surfactant. Alternatively or in addition to this, the polishing composition may contain about 1000 ppm or less of cationic surfactant, for example, about 800 ppm or less, about 600 ppm or less, about 400 ppm or less, about 200 ppm or less, or about 100 ppm or less of cationic surfactant. Thus, the polishing composition may contain cationic surfactant in an amount limited by any two of the aforementioned endpoints. For example, a polishing composition may contain cationic surfactants in concentrations of approximately 10 ppm to 1000 ppm, such as approximately 10 ppm to 800 ppm, approximately 10 ppm to 600 ppm, approximately 10 ppm to 400 ppm, approximately 10 ppm to 200 ppm, approximately 10 ppm to 100 ppm, approximately 25 ppm to 1000 ppm, approximately 25 ppm to 800 ppm, approximately 25 ppm to 600 ppm, approximately 25 ppm to 400 ppm, approximately 25 ppm to 200 ppm, or approximately 25 ppm to 100 ppm.

[0031]

[0031] In some embodiments, the polishing composition further comprises a self-stopping agent. Thus, in some aspects, the present invention provides a chemical mechanical polishing composition comprising (a) ceria polishing particles; (b) a cationic polymer; (c) a buffer; (d) a self-stopping agent; and (e) water, consisting essentially of, or consisting of, these components, and having a pH of about 6 to about 9.

[0032]

[0032] The self-stopping agent can be any suitable compound capable of reducing the removal rate of one or more of silicon oxide, silicon nitride, and polysilicon. In some embodiments, the self-stopping agent has the formula (I): TIFF0007839885000001.tif27170, where R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may or may not be substituted.

[0033]

[0033] As used herein, the term "alkyl" refers to a straight-chain or branched-chain, saturated or unsaturated, aliphatic group having the indicated number of carbon atoms. Alkyl can have any number of carbons, for example C 1-2 、C 1-3 、C 1-4 、C 1-5 、C 1-6 、C 1-7 、C 1-8 、C 1-9 、C 1-10 、C 2-3 、C 2-4 、C 2-5 、C 2-6 、C 3-4 、C 3-5 、C 3-6 、C 4-5 、C 4-6 及びC 5-6 を含むことができる。例えば、C 1-6Examples of alkyl groups include, but are not limited to, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, and hexyl. Alkyl can also refer to alkyl groups having up to 30 carbon atoms, such as, but not limited to, heptyl, octyl, nonyl, and decyl. Alkyl groups can be substituted or unsubstituted. A "substituted alkyl" group can be substituted with one or more groups selected from halo, hydroxy, amino, oxo (=O), alkylamino, amide, acyl, nitro, cyano, and alkoxy groups.

[0034]

[0034] As used herein, the term "heteroalkyl" means an alkyl group as described herein, wherein one or more carbon atoms are optionally and independently substituted with heteroatoms selected from N, O, and S.

[0035]

[0035] As used herein, the term "cycloalkyl" refers to a saturated or partially unsaturated monocyclic, fused bicyclic, or bridging polycyclic ring assembly containing 3 to 12 ring atoms, or the number of atoms indicated. A cycloalkyl group may contain any number of carbon atoms, for example, C 3-6 , C 4-6 , C 5-6 , C 3-8 , C 4-8 , C 5-8 , C 6-8 , C 3-9 , C 3-10 , C 3-11 , and C 3-12This may include saturated monocyclic carbocyclic groups, such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl. Saturated bicyclic and polycyclic carbocyclic groups include, for example, norbornane, [2.2.2]bicyclooctane, decahydronaphthalene, and adamantane. Carbocyclic groups may also be partially unsaturated, having one or more double or triple bonds within the ring. Representative partially unsaturated carbocyclic groups include, but are not limited to, cyclobutene, cyclopentene, cyclohexene, cyclohexadiene (1,3- and 1,4-isomers), cycloheptene, cycloheptadiene, cyclooctene, cyclooctadiene (1,3-, 1,4- and 1,5-isomers), norbornene, and norbornadiene.

[0036]

[0036] As used herein, the term "heterocycloalkyl" means a cycloalkyl group as described herein, wherein one or more carbon atoms are optionally and independently substituted with heteroatoms selected from N, O, and S.

[0037]

[0037] As used herein, the term “aryl” refers to an aromatic ring system having any suitable number of ring atoms and any suitable number of rings. An aryl group may have any suitable number of ring atoms, e.g., 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, or 16 ring atoms, and 6 to 10, 6 to 12, or 6 to 14 ring members. An aryl group may be monocyclic, condense to form a bicyclic or tricyclic group, or be bonded to form a biaryl group. Representative aryl groups include phenyl, naphthyl, and biphenyl. Other aryl groups include benzyl having a methylene bond. Some aryl groups have 6 to 12 ring members, e.g., phenyl, naphthyl, or biphenyl. Other aryl groups have 6 to 10 ring members, e.g., phenyl or naphthyl.

[0038]

[0038] As used herein, the term "heteroaryl" means an aryl group as described herein, wherein one or more carbon atoms are optionally and independently substituted with heteroatoms selected from N, O, and S.

[0039]

[0039] In certain embodiments, the self-detergent is selected from hydroxamic acid, acetohydroxamic acid, benzhydroxamic acid, salicylic acid, and combinations thereof.

[0040]

[0040] The polishing composition may contain any appropriate amount of self-deactivating agent, if present. The polishing composition may contain about 10 ppm or more of self-deactivating agent, for example, about 15 ppm or more, about 20 ppm or more, about 25 ppm or more, about 30 ppm or more, about 35 ppm or more, or about 40 ppm or more of self-deactivating agent. Alternatively or in addition to this, the polishing composition may contain about 1000 ppm or less of self-deactivating agent, for example, about 800 ppm or less, about 600 ppm or less, about 400 ppm or less, about 200 ppm or less, or about 100 ppm or less of self-deactivating agent. Thus, the polishing composition may contain self-deactivating agent in an amount limited by any two of the aforementioned endpoints. For example, a polishing composition may contain an auto-stopping agent in a concentration of approximately 10 ppm to 1000 ppm, such as approximately 10 ppm to 800 ppm, approximately 10 ppm to 600 ppm, approximately 10 ppm to 400 ppm, approximately 10 ppm to 200 ppm, approximately 10 ppm to 100 ppm, approximately 25 ppm to 1000 ppm, approximately 25 ppm to 800 ppm, approximately 25 ppm to 600 ppm, approximately 25 ppm to 400 ppm, approximately 25 ppm to 200 ppm, or approximately 25 ppm to 100 ppm.

[0041] [0041 A chemical mechanical polishing composition may contain one or more compounds (i.e., pH-adjusting compounds) that can adjust (i.e., adjust) the conductivity of the polishing composition. The conductivity of the polishing composition can be adjusted using any suitable conductivity modifier described herein. Typically, a chemical mechanical polishing composition has a conductivity of at least 170 μS / cm at the point of use (e.g., at least 200 μS / cm, at least 250 μS / cm, at least 300 μS / cm, at least 350 μS / cm, at least 400 μS / cm, at least 450 μS / cm, or at least 500 μS / cm). For example, a chemical mechanical polishing composition may have a conductivity of 170 μS / cm to 2000 μS / cm, 350 μS / cm to 2000 μS / cm, or 500 μS / cm to 2000 μS / cm. Preferably, the chemical mechanical polishing composition has an electrical conductivity of 350 μS / cm to 2000 μS / cm at the point of use.

[0042]

[0042] Accordingly, in some embodiments, the polishing composition further comprises a conductivity modifier. Accordingly, in some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a conductivity modifier; and (e) water, wherein the polishing composition has a pH of about 6 to about 9.

[0043]

[0043] As used herein, the term “conductivity adjust” refers to any low molecular weight salt that can adjust the conductivity of a polishing composition. In some embodiments, the conductivity adjuster is selected from ammonium salts, potassium salts, and combinations thereof. The conductivity adjuster may have any suitable counterion. For example, the conductivity adjuster may have a counterion selected from nitrates, acetates, halides, phosphates, and sulfates. Thus, in some embodiments, the conductivity adjuster is selected from ammonium nitrate, ammonium acetate, ammonium halide, ammonium phosphate, ammonium sulfate, potassium nitrate, potassium acetate, potassium halide, potassium phosphate, potassium sulfate, or combinations thereof.

[0044]

[0044] In some embodiments, the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof. In one embodiment, the conductivity modifier is selected from diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof. In another embodiment, the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, and combinations thereof. In a specific embodiment, the conductivity modifier is selected from ammonium nitrate, potassium nitrate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, and combinations thereof.

[0045]

[0045] The polishing composition may contain any appropriate amount of conductivity modifier, if present. The polishing composition may contain about 25 ppm or more of conductivity modifier, for example, about 50 ppm or more, about 100 ppm or more, or about 200 ppm or more. Alternatively or in addition to this, the polishing composition may contain about 5000 ppm or less of conductivity modifier, for example, about 4000 ppm or less, about 3000 ppm or less, about 2000 ppm or less, or about 1000 ppm or less. Thus, the polishing composition may contain conductivity modifier in an amount limited by any two of the aforementioned endpoints. For example, a polishing composition may contain conductivity modifiers ranging from approximately 25 ppm to approximately 5000 ppm, such as approximately 25 ppm to approximately 400 ppm, approximately 25 ppm to approximately 3000 ppm, approximately 25 ppm to approximately 2000 ppm, approximately 25 ppm to approximately 1000 ppm, approximately 50 ppm to approximately 5000 ppm, approximately 50 ppm to approximately 4000 ppm, approximately 50 ppm to approximately 3000 ppm, approximately 50 ppm to approximately 2000 ppm, approximately 50 ppm to approximately 1000 ppm, approximately 100 ppm to approximately 5000 ppm, or approximately 100 ppm to approximately 1000 ppm.

[0046]

[0046] In some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a nonionic polymer; (e) a cationic surfactant; and (f) water, wherein the polishing composition has a pH of about 6 to about 9.

[0047]

[0047] In some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a cationic surfactant; (e) a self-stopping agent; and (f) water, wherein the polishing composition has a pH of about 6 to about 9.

[0048]

[0048] In some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a conductivity modifier; (e) a cationic surfactant; and (f) water, wherein the polishing composition has a pH of about 6 to about 9.

[0049]

[0049] In some embodiments, the present invention provides a chemical mechanical polishing composition comprising, essentially, or consisting of (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a conductivity modifier; (e) a nonionic polymer; and (f) water, wherein the polishing composition has a pH of about 6 to about 9.

[0050]

[0050] The polishing composition comprises an aqueous carrier. The aqueous carrier comprises water (e.g., deionized water) and may contain one or more water-miscible organic solvents. Examples of usable organic solvents include alcohols such as propenyl alcohol, isopropyl alcohol, ethanol, 1-propanol, methanol, and 1-hexanol; aldehydes such as acetylaldehyde; ketones such as acetone, diacetone alcohol, and methyl ethyl ketone; esters such as ethyl formate, propyl formate, ethyl acetate, methyl acetate, methyl lactate, butyl lactate, and ethyl lactate; ethers containing sulfoxides such as dimethyl sulfoxide (DMSO), tetrahydrofuran, dioxane, and diglyme; amides such as N,N-dimethylformamide, dimethylimidazolidinone, and N-methylpyrrolidone; polyhydric alcohols and their derivatives such as ethylene glycol, glycerol, diethylene glycol, and diethylene glycol monomethyl ether; and nitrogen-containing organic compounds such as acetonitrile, amylamine, isopropylamine, imidazole, and dimethylamine. Preferably, the aqueous support is water only, i.e., free of organic solvents.

[0051] [0051 A chemical mechanical polishing composition may contain one or more compounds (i.e., pH-adjusting compounds) that can adjust (i.e., adjust) the pH of the polishing composition. The pH of the polishing composition can be adjusted using any suitable compound that can adjust the pH of the polishing composition. The pH-adjusting compound is preferably water-soluble and compatible with the other components of the polishing composition. Typically, a chemical mechanical polishing composition has a pH of about 6 to about 9 at the point of use (e.g., pH of about 6 to about 8, about 6 to about 7, about 7 to about 9, about 8 to about 9, about 6.5 to about 8.5, about 6.5 to about 7.5, or about 7.5 to about 8.5). Preferably, a chemical mechanical polishing composition has a pH of about 6 to about 9 or about 7 to about 8 at the point of use.

[0052]

[0052] Compounds that can adjust the pH can be selected from the group consisting of ammonium salts, alkali metal salts, carboxylic acids, alkali metal hydroxides, alkali metal carbonates, alkali metal bicarbonates, borates, and mixtures thereof.

[0053]

[0053] The chemical mechanical polishing composition optionally further comprises one or more additives. Exemplary additives include conditioners, acids (e.g., sulfonic acid), complexing agents, chelating agents, biocides, scale inhibitors, and dispersants.

[0054]

[0054] The biocide, if present, can be any suitable biocide and may be present in the polishing composition in any suitable amount. A suitable biocide is an isothiazolinone biocide. The biocide may be present in the polishing composition at a concentration of about 1 to about 750 ppm, preferably about 20 to about 200 ppm.

[0055]

[0055] Polishing compositions can be manufactured by any suitable technique, many of which are known to those skilled in the art. Polishing compositions can be prepared by batch or continuous processes. Generally, polishing compositions are prepared by combining the components of a polishing composition. As used herein, the term “components” includes individual components (e.g., ceria abrasive particles, cationic polymers, buffers, any conductivity modifiers, any cationic surfactants, any nonionic polymers, any self-stopping agents, and / or any other additives) as well as any combination of components (e.g., ceria abrasive particles, cationic polymers, buffers, any conductivity modifiers, any cationic surfactants, any nonionic polymers, any self-stopping agents, and / or any other additives).

[0056]

[0056] For example, a polishing composition can be prepared by (i) providing all or part of a liquid carrier, (ii) dispersing ceria abrasive particles, cationic polymers, buffers, any conductivity modifiers, any cationic surfactants, any nonionic polymers, any self-stopping agents, and / or other any additives using any suitable means for preparing such a dispersion, (iii) adjusting the pH of the dispersion as necessary, and (iv) optionally adding appropriate amounts of any other components and / or additives to the mixture.

[0057]

[0057] Alternatively, a polishing composition can be prepared by (i) providing one or more components (e.g., a cationic polymer, a buffer, any conductivity modifier, any cationic surfactant, any nonionic polymer, any self-stopping agent, and / or any other additive) in a ceria polishing slurry; (ii) providing one or more components (e.g., a cationic polymer, a buffer, any conductivity modifier, any cationic surfactant, any nonionic polymer, any self-stopping agent, and / or any other additive) in an additive solution; (iii) combining the ceria polishing slurry and the additive solution to form a mixture; (iv) optionally adding an appropriate amount of any other additive to the mixture; and (v) adjusting the pH of the mixture as necessary.

[0058]

[0058] The polishing composition may be supplied as a one-package system comprising ceria abrasive particles, a cationic polymer, a buffer, an optional conductivity modifier, an optional cationic surfactant, an optional nonionic polymer, an optional self-stopping agent, any other optional additives, and water. Alternatively, the polishing composition of the present invention may be supplied as a two-package system comprising a ceria abrasive slurry in a first package and an additive solution in a second package, where the ceria abrasive slurry consists essentially of or comprises ceria abrasive particles and water, and the additive solution consists essentially of or comprises a cationic polymer, a buffer, an optional conductivity modifier, an optional cationic surfactant, an optional nonionic polymer, an optional self-stopping agent, and / or any other optional additives. The two-package system allows for adjustment of the properties of the polishing composition by changing the mixing ratio of the two packages, namely the ceria abrasive slurry and the additive solution.

[0059]

[0059] Various methods can be employed to utilize such a two-package polishing system. For example, the ceria polishing slurry and the additive solution can be delivered to the polishing table by different pipes that are coupled and connected at the outlet of the supply pipe. The ceria polishing slurry and the additive solution can be mixed immediately before or just before polishing, or they can be supplied onto the polishing table simultaneously. Furthermore, when mixing the two packages, deionized water can be added as desired to adjust the polishing composition and the resulting substrate polishing properties.

[0060]

[0060] Similarly, in connection with the present invention, three, four, or more packaging systems may be utilized, each of which contains different components, one or more arbitrary components, and / or one or more of the same components of the chemical mechanical polishing composition of the present invention in different concentrations.

[0061]

[0061] To mix components contained in two or more storage devices to produce a polishing composition at or near a point of use, the storage devices typically have one or more flow lines from each storage device to a point of use of the polishing composition (e.g., a platen, polishing pad, or substrate surface). As used herein, the term “point of use” refers to the point at which the polishing composition is applied to the substrate surface (e.g., the polishing pad or the substrate surface itself). The term “flow line” means a flow path from an individual storage container to the point of use of the components stored therein. Each flow line may connect directly to a point of use, or two or more flow lines may be combined at any point to form a single flow line leading to a point of use. Furthermore, any of the flow lines (e.g., individual flow lines or combined flow lines) may first connect to one or more other devices (e.g., pumping devices, measuring devices, mixing devices, etc.) before reaching the point of use of the components.

[0062]

[0062] The components of the polishing composition can be delivered independently to the point of use (for example, the components are delivered to the substrate surface where they are mixed during the polishing process), or one or more components can be combined before delivery to the point of use, for example, immediately before or just before delivery to the point of use. The components are combined "just before delivery to the point of use" if they are combined approximately 5 minutes or more before being added to the platen in a mixed form, for example approximately 4 minutes, 3 minutes, 2 minutes, 1 minute, 45 seconds, 30 seconds, 10 seconds or more before being added to the platen in a mixed form, or simultaneously with the delivery of the components at the point of use (for example, the components are combined in a dispenser). The components are also combined "just before delivery to the point of use" if they are combined within 5 m of the point of use, for example within 1 m of the point of use, or within 10 cm of the point of use (for example within 1 cm of the point of use).

[0063]

[0063] If two or more components of the polishing composition are combined before reaching the point of use, the components may be combined in a flow line and delivered to the point of use without the use of a mixing device. Alternatively, one or more flow lines may lead to a mixing device to facilitate the combination of two or more components. Any suitable mixing device can be used. For example, the mixing device may be a nozzle or jet (e.g., a high-pressure nozzle or jet) through which two or more components flow. Alternatively, the mixing device may be a container-type mixing device including one or more inlets through which two or more components of the polishing slurry are introduced into the mixer, and at least one outlet through which the mixed components pass as they leave the mixer so that they are delivered directly or via other elements of the device (e.g., via one or more flow lines) to the point of use. Furthermore, the mixing device may comprise two or more chambers, each having at least one inlet and at least one outlet, through which two or more components are combined in each chamber. When a container-type mixing device is used, the mixing device preferably comprises a mixing mechanism to further facilitate the mixing of the components. Mixing mechanisms are commonly known in the art and include stirrers, blenders, agitators, paddle baffles, gas sparger systems, and vibrators.

[0064]

[0064] The polishing composition may also be provided as a concentrate intended to be diluted with an appropriate amount of water before use. In such embodiments, the polishing composition concentrate contains an amount of the polishing composition components such that, when the concentrate is diluted with an appropriate amount of water, each component of the polishing composition is present in the polishing composition in an amount within the appropriate range described above for each component. For example, ceria polishing particles, cationic polymers, buffers, optional conductivity modifiers, optional cationic surfactants, optional nonionic polymers, optional self-stoppers, and / or optional other additives may each be present in the concentrate in an amount about twice (e.g., about three times, about four times, or about five times) higher than the concentrations described above for each component, and when the concentrate is diluted with an equal volume of water (e.g., two equal volumes of water, three equal volumes of water, or four equal volumes of water, respectively), each component will be present in the polishing composition in an amount within the range described above for each component. Furthermore, as will be understood by those skilled in the art, the concentrate may include an appropriate proportion of water present in the final polishing composition to ensure that the ceria abrasive particles, cationic polymers, buffers, any conductivity modifiers, any cationic surfactants, any nonionic polymers, any self-stopping agents, and / or any other additives are at least partially or completely dissolved in the concentrate.

[0065]

[0065] The present invention further provides a method for chemically polishing a substrate, comprising, essentially, or consisting of: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 3 to about 9; (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate.

[0066]

[0066] The chemical mechanical polishing composition can be used to polish any suitable substrate and is particularly useful for polishing substrates that include at least one layer (typically a surface layer) made of a low dielectric material. Suitable substrates include wafers used in the semiconductor industry. Wafers typically include, or consist of, metals, metal oxides, metal nitrides, metal composites, metal alloys, low dielectric materials, or combinations thereof. The method of the present invention is particularly useful for polishing substrates that include silicon oxide, silicon nitride, and / or polysilicon, for example, one or all of the aforementioned materials. In some embodiments, the substrate includes silicon oxide, silicon nitride, and polysilicon on the surface of the substrate, and at least a portion of the silicon oxide, silicon nitride, and polysilicon on the surface of the substrate is polished to polish the substrate.

[0067]

[0067] In certain embodiments, the substrate comprises silicon oxide, silicon nitride, and polysilicon. The polysilicon can be any suitable polysilicon, many of which are known in the art. The polysilicon can have any suitable phase and may be amorphous, crystalline, or a combination thereof. The silicon nitride can be any suitable silicon nitride, many of which are known in the art. The silicon nitride can have any suitable phase and may be amorphous, crystalline, or a combination thereof. Similarly, the silicon oxide can be any suitable silicon oxide, many of which are known in the art. Suitable types of silicon oxide include, but are not limited to, borosilicate glass (BPSG), high-density plasma (HDP) oxide and / or plasma-enhanced tetraethyl orthosilicate (PETEOS) and / or tetraethyl orthosilicate (TEOS), thermal oxides, and undoped silicate glass.

[0068]

[0068] The chemical mechanical polishing composition of the present invention can be adapted to provide effective polishing within a desired range of polishing that is selective to a particular thin layer material, while minimizing surface imperfections, defects, corrosion, erosion, and removal of the stop layer. Selectivity can be controlled to some extent by changing the relative concentrations of the components of the polishing composition.

[0069]

[0069] Preferably, the chemical mechanical polishing composition of the present invention can provide non-selective chemical mechanical polishing of a substrate containing silicon oxide, silicon nitride, and polysilicon. In other words, the polishing composition can provide a ratio of approximately 1:1:1 in the relative removal rates of silicon oxide, silicon nitride, and polysilicon. In this regard, the method can provide removal rates of silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate (i.e., the sum of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate divided by 3), and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 20% of the overall average removal rate. In some embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 15% of the overall average removal rate. In certain embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 10% of the overall average removal rate.

[0070]

[0070] While we do not wish to be bound by any particular theory, it is believed that adding nonionic polymers alone or in combination with cationic surfactants helps to make the polishing composition non-selective, i.e., to maintain similar removal rates for each of silicon dioxide, silicon nitride, and polysilicon. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, or essentially comprising, or a method comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a nonionic polymer; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (e.g., a pH of about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate and polish the substrate.

[0071]

[0071] Similarly, in certain embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, or essentially comprising, (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a cationic surfactant; (e) a nonionic polymer; and (f) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, a pH of about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate, thereby polishing the substrate.

[0072]

[0072] Although we do not wish to be bound by any particular theory, it is also believed that adding conductivity modifiers (e.g., ammonium nitrate or potassium nitrate) alone or in combination with nonionic polymers and / or cationic surfactants helps to make the polishing composition non-selective, i.e., to maintain similar removal rates for silicon dioxide, silicon nitride, and / or polysilicon, respectively. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, essentially, or comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a conductivity modifier; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate.

[0073]

[0073] Preferably, the chemical mechanical polishing composition of the present invention provides selective chemical mechanical polishing of a substrate containing silicon oxide, silicon nitride, and polysilicon, and can selectively remove silicon oxide at a reduced rate compared to silicon nitride and polysilicon. In this regard, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate (i.e., the sum of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate divided by 3), and the silicon oxide removal rate is at least 50% lower than the overall average removal rate. In some embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon oxide removal rate is at least 60% lower than the overall average removal rate. In certain embodiments, the method can provide removal rates for silicon dioxide, silicon nitride, and polysilicon such that the silicon dioxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon dioxide removal rate is at least 70% lower than the overall average removal rate.

[0074]

[0074] Although we do not wish to be bound by any particular theory, it is believed that by (i) adding an additional cationic polymer (e.g., polyMADQUAT, polyDADMAC, and / or polyvinylimidazole) and / or (ii) adding a cationic surfactant, silicon oxide can be selectively removed at a reduced rate compared to silicon nitride and polysilicon. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, essentially, or comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a cationic surfactant; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate. Similarly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, essentially, or comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) two or more cationic polymers; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate.

[0075]

[0075] Although we do not wish to be bound by any particular theory, it is also thought that adding conductivity modifiers (e.g., diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, or a combination thereof) can selectively remove silicon oxide at a reduced rate compared to silicon nitride and polysilicon. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, essentially, or comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a conductivity modifier; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate.

[0076]

[0076] Preferably, the chemical mechanical polishing composition of the present invention provides selective chemical mechanical polishing of a substrate containing silicon oxide, silicon nitride, and polysilicon, and can selectively remove silicon nitride at a reduced rate compared to silicon oxide and polysilicon. In this regard, the method can provide removal rates of silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate (i.e., the sum of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate divided by 3), and the silicon nitride removal rate is at least 50% lower than the overall average removal rate. In some embodiments, the method can provide removal rates of silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon nitride removal rate is at least 60% lower than the overall average removal rate. In certain embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon nitride removal rate is at least 70% lower than the overall average removal rate.

[0077]

[0077] Although we do not wish to be bound by any particular theory, it is believed that the addition of a self-stopping agent allows for the selective removal of silicon nitride at a reduced rate compared to silicon oxide and polysilicon. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, or essentially comprising, or a method comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria polishing particles; (b) a cationic polymer; (c) a buffer; (d) a self-stopping agent; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate and polish the substrate.

[0078]

[0078] Preferably, the chemical mechanical polishing composition of the present invention provides selective chemical mechanical polishing of a substrate containing silicon oxide, silicon nitride, and polysilicon, and can selectively remove polysilicon at a reduced rate compared to silicon oxide and silicon nitride. In this regard, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate (i.e., the sum of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate divided by 3), and the polysilicon removal rate is at least 50% lower than the overall average removal rate. In some embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the polysilicon removal rate is at least 60% lower than the overall average removal rate. In certain embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the polysilicon removal rate is at least 70% lower than the overall average removal rate.

[0079]

[0079] Although we do not wish to be bound by any particular theory, it is believed that the addition of nonionic polymers can selectively remove polysilicon at a reduced rate compared to silicon oxide and silicon nitride. Accordingly, in some embodiments, the present invention further provides a method for chemically polishing a substrate, comprising, or essentially comprising, or a method comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing a chemically mechanical polishing composition comprising (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; (d) a nonionic polymer; and (e) water, wherein the polishing composition has a pH of about 6 to about 9 (for example, a pH of about 7 to about 9); (iv) bringing the substrate into contact with the polishing pad and the chemically mechanical polishing composition; and (v) moving the polishing pad and the chemically mechanical polishing composition against the substrate to polish at least a portion of the substrate and polish the substrate.

[0080]

[0080] Preferably, the chemical mechanical polishing composition of the present invention provides selective chemical mechanical polishing of a substrate containing silicon oxide, silicon nitride, and polysilicon, and can selectively remove each of silicon oxide and silicon nitride at a reduced rate compared to polysilicon. In this regard, the method can provide removal rates of silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate (i.e., the sum of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate divided by 3), and each of the silicon oxide removal rate and silicon nitride removal rate is at least 50% lower than the overall average removal rate. In some embodiments, the method can provide removal rates of silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate and silicon nitride removal rate is at least 60% lower than the overall average removal rate. In certain embodiments, the method can provide removal rates for silicon oxide, silicon nitride, and polysilicon such that the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate and silicon nitride removal rate is at least 70% lower than the overall average removal rate.

[0081]

[0081] It is desirable that the polishing composition of the present invention exhibits low particle defects when polishing a substrate, as determined by appropriate technique. In preferred embodiments, the chemical mechanical polishing composition of the present invention includes a wet process ceria which contributes to a low defect rate. Particle defects on a substrate polished with the polishing composition of the present invention can be determined by any appropriate technique. For example, particle defects on a polished substrate can be determined using laser light scattering techniques such as dark-field normal beam composite (DCN) and dark-field oblique beam composite (DCO). Appropriate instruments for evaluating the particle defect rate are available, for example, from KLA-Tencor (e.g., SURFSCAN® SPI instruments operating at a threshold of 120 nm or 160 nm).

[0082]

[0082] A substrate polished with the polishing composition of the present invention, particularly silicon containing silicon oxide, silicon nitride, and / or polysilicon, preferably has a DCN value of about 20,000 counts or less, for example, about 17,500 counts or less, about 15,000 counts or less, about 12,500 counts or less, about 3,500 counts or less, about 3,000 counts or less, about 2,500 counts or less, about 2,000 counts or less, about 1,500 counts or less, or about 1,000 counts or less. Preferably, a substrate polished according to an embodiment of the present invention has a DCN value of about 750 counts or less, for example, about 500 counts or less, about 250 counts or less, about 125 counts or less, or about 100 counts or less.

[0083]

[0083] Alternatively, or in addition to the above, it is desirable that a substrate polished with the chemical mechanical polishing composition of the present invention exhibits low scratchness, as determined by the appropriate technique. For example, a silicon wafer polished according to an embodiment of the present invention is preferably to have about 250 scratches or less, or about 125 scratches or less, as determined by any appropriate method known in the art, such as laser light scattering technique.

[0084]

[0084] The chemical mechanical polishing composition and method of the present invention are particularly suitable for use in conjunction with a chemical mechanical polishing apparatus. Typically, the apparatus includes a platen that is in motion during use and has a velocity resulting from orbital motion, linear motion, or circular motion; a polishing pad that is in contact with the platen and moves with the platen during motion; and a carrier that holds a substrate to be polished by bringing the substrate into contact with the surface of the polishing pad and moving it. Polishing of the substrate is performed by bringing the substrate into contact with the polishing pad and the polishing composition of the present invention, and then moving the polishing pad relative to the substrate to polish at least a portion of the substrate.

[0085]

[0085] The substrate can be polished with a chemical mechanical polishing composition using any suitable polishing pad (e.g., polishing surface). Suitable polishing pads include, for example, woven and nonwoven polishing pads. Furthermore, a suitable polishing pad may contain any suitable polymer having various densities, hardness, thickness, compressibility, rebound capacity under compression, and compression coefficient. Suitable polymers include, for example, polyvinyl chloride, polyvinyl fluoride, nylon, fluorocarbon, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, co-formation products thereof, and mixtures thereof. A soft polyurethane polishing pad is particularly useful when used in combination with the polishing method of the present invention. Representative pads include, but are not limited to, SURFIN® 000, SURFIN® SSW1, SPM3100 (Eminence Technologies), POLITEX® (commercially available from Dow Chemical Company, Newark, DE), POLYPAS® 27 (commercially available from Fujibo, Osaka, JP), and EPIC® D100 pad or NEXPLANAR® E6088 (commercially available from Cabot Microelectronics, Aurora, IL). A preferred polishing pad is the rigid microporous polyurethane pad (IC1010®) (commercially available from Dow Chemical).

[0086]

[0086] Preferably, the chemical mechanical polishing apparatus further includes an on-site polishing endpoint detection system, many of which are known in the art. Techniques for inspecting and monitoring the polishing process by analyzing light or other radiation reflected from the surface of the substrate being polished are known in the art. Such methods are described, for example, in U.S. Patents 5,196,353, 5,433,651, 5,609,511, 5,643,046, 5,658,183, 5,730,642, 5,838,447, 5,872,633, 5,893,796, 5,949,927, and 5,964,643. Preferably, by inspecting or monitoring the progress of the polishing process with respect to the substrate being polished, it becomes possible to determine the polishing endpoint, i.e., when to terminate the polishing process with respect to a particular substrate.

[0087] Embodiment

[0087] (1) In embodiment (1), (a) Ceria abrasive particles; (b) Cationic polymers; (c) buffering agent; and (d) water A chemical mechanical polishing composition is presented, comprising a polishing composition having a pH of about 6 to about 9.

[0088]

[0088] (2) Embodiment (2) presents the polishing composition described in Embodiment (1), wherein the polishing composition contains about 0.001% to about 10% by weight of ceria abrasive particles.

[0089]

[0089] (3) Embodiment (3) presents a polishing composition according to Embodiment (1) or Embodiment (2), wherein the polishing composition contains about 0.05% to about 5% by weight of ceria abrasive particles.

[0090]

[0090] (4) Embodiment (4) presents a polishing composition according to any one of Embodiments (1) to (3), wherein the polishing composition has a pH of about 7 to about 9.

[0091]

[0091] (5) Embodiment (5) presents a polishing composition according to any one of Embodiments (1) to (4), wherein the polishing composition has a pH of about 7 to about 8.

[0092]

[0092] (6) Embodiment (6) presents a polishing composition according to any one of Embodiments (1) to (5), further comprising a nonionic polymer selected from polyalkylene glycol, polyetheramine, polyethylene oxide / polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkylene oxide copolymer, hydrophobic modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

[0093]

[0093] (7) Embodiment (7) presents the polishing composition described in Embodiment (6), wherein the nonionic polymer is polyvinylpyrrolidone.

[0094]

[0094] (8) Embodiment (8) presents the polishing composition described in Embodiment (6), wherein the nonionic polymer is polyalkylene glycol.

[0095]

[0095] (9) Embodiment (9) presents the polishing composition described in Embodiment (6), wherein the nonionic polymer is polyethylene oxide / polypropylene oxide copolymer.

[0096]

[0096] (10) Embodiment (10) The cationic polymer is N-vinylimidazole, 2-(dimethylamino)ethyl acrylate ("DMAEA"), 2-(dimethylamino)ethyl methacrylate ("DMAEM"), 3-(dimethylamino)propyl methacrylamide ("DMAPMA"), 3-(dimethylamino)propyl acrylamide ("DMAPA"), 3-methacrylamidepropyl-trimethyl-ammonium chloride ("MAPTAC"), 3-acrylamidepropyl-trimethyl-ammonium chloride ("APTAC"), diallyldimethylammonium chloride ( A polishing composition according to any one of Embodiments (1) to (9) is presented, comprising cationic monomers selected from "DADMAC", 2-(acryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEA.MCQ"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), N,N-dimethylaminoethyl acrylate benzyl chloride ("DMAEA.BCQ"), N,N-dimethylaminoethyl methacrylate benzyl chloride ("DMAEM.BCQ"), salts thereof, and combinations thereof.

[0097]

[0097] (11) Embodiment (11) presents a polishing composition as described in Embodiment (10), wherein the cationic monomer is selected from N-vinylimidazole, diallyldimethylammonium chloride ("DADMAC"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), salts thereof, and combinations thereof.

[0098]

[0098] (12) Embodiment (12) presents a polishing composition according to any one of Embodiments (1) to (11), wherein the buffer is an amine compound containing 1 to 5 nitrogen atoms.

[0099]

[0099] (13) Embodiment (13) presents a polishing composition according to any one of Embodiments (1) to (12), wherein the buffer is a heterocyclic or heteroaromatic amine compound containing 1 to 5 nitrogen atoms.

[0100]

[0100] (14) Embodiment (14) presents a polishing composition according to any one of Embodiments (1) to (13), wherein the buffering agent comprises a heterocyclic or heteroaromatic amine selected from pyrrole, pyrrolidine, carbazole, isoindole, indole, pyrroline, indidine, indoline, pyridine, piperidine, quinolidine, isoquinoline, quinoline, naphthyridine, imidazole, imidazoline, imidazolidine, tetrazole, triazole, benimidazole, purine, benzoxazole, benzthiazole, isothiazole, isoxazole, thiazole, oxazole, morpholine, thiomorpholine, pyrazole, pyrazoline, pteridine, triazine, pyrimidine, pyrazine, piperazine, indazole, pyridazine, and combinations thereof.

[0101]

[0101] (15) Embodiment (15) presents a polishing composition according to any one of Embodiments (1) to (14), wherein the buffering agent is benzotriazole, 5-aminotetrazole, or a combination thereof.

[0102]

[0102] (16) Embodiment (16) presents a polishing composition according to any one of Embodiments (1) to (15), wherein the polishing composition further comprises a cationic surfactant.

[0103]

[0103] (17) Embodiment (17) presents the polishing composition described in Embodiment (16), wherein the cationic surfactant comprises a quaternary ammonium salt.

[0104]

[0104] (18) Embodiment (18) presents a polishing composition as described in Embodiment (16) or Embodiment (17), wherein the cationic surfactant is selected from N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride, (oxydi-2,1-ethanediyl)bis(cocoalkyl)dimethylammonium dichloride, salts thereof, and combinations thereof.

[0105]

[0105] (19) Embodiment (19) is a polishing composition according to any one of Embodiments (1) to (18), wherein formula (I): A polishing composition is presented which further comprises a self-stopping agent of formula TIFF0007839885000002.tif25170 (wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted).

[0106]

[0106] (20) Embodiment (20) presents the polishing composition described in Embodiment (19), wherein the self-stopping agent is selected from hydroxamic acid, acetohydroxamic acid, benzhydroxamic acid, salicylic acid, and combinations thereof.

[0107]

[0107] (21) Embodiment (21) presents a polishing composition according to Embodiment (19) or Embodiment (20), wherein the self-stopping agent is hydroxamic acid.

[0108]

[0108] (22) Embodiment (22) presents a polishing composition according to Embodiment (19) or Embodiment (20), wherein the self-detergent is benzhydroxamic acid.

[0109]

[0109] (23) Embodiment (23) presents a polishing composition according to Embodiment (19) or Embodiment (20), wherein the self-detergent is salicylic acid.

[0110]

[0110] (24) Embodiment (24) presents a polishing composition according to any one of Embodiments (1) to (23), wherein the polishing composition further comprises a conductivity modifier selected from ammonium salts, potassium salts, and combinations thereof.

[0111]

[0111] (25) Embodiment (25) presents the polishing composition described in Embodiment (24), wherein the conductivity modifier has a counterion selected from nitrates, acetates, halides, phosphates, and sulfates.

[0112]

[0112] (26) Embodiment (26) presents a polishing composition as described in Embodiment (24) or Embodiment (25), in which the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

[0113]

[0113] (27) Embodiment (27) presents a polishing composition according to any one of Embodiments (1) to (26), wherein the polishing composition has an conductivity of at least 170 μS / cm.

[0114]

[0114] (28) Embodiment (28) presents a polishing composition according to any one of Embodiments (1) to (27), wherein the polishing composition has an conductivity of at least 350 μS / cm.

[0115]

[0115] (29) Embodiment (29) is a method for chemically and mechanically polishing a substrate, (i) To provide a substrate, (ii) To provide a polishing pad, (iii) (a) Ceria abrasive particles; (b) Cationic polymers; (c) buffering agent; and (d) water To provide a chemical mechanical polishing composition comprising a compound, wherein the polishing composition has a pH of about 6 to about 9. (iv) bringing the substrate into contact with the polishing pad and the chemical mechanical polishing composition, (v) A method is presented which includes moving a polishing pad and a chemical mechanical polishing composition against a substrate to polish at least a portion of the substrate.

[0116]

[0116] (30) Embodiment (30) presents the method according to Embodiment (29), wherein the polishing composition contains about 0.001% to about 10% by weight of ceria abrasive particles.

[0117]

[0117] (31) Embodiment (31) presents the method according to Embodiment (29) or Embodiment (30), wherein the polishing composition contains about 0.05% to about 5% by weight of ceria abrasive particles.

[0118]

[0118] (32) Embodiment (32) presents the method according to any one of Embodiments (29) to (31), wherein the polishing composition has a pH of about 7 to about 9.

[0119]

[0119] (33) Embodiment (33) presents the method according to any one of Embodiments (29) to (32), wherein the polishing composition has a pH of about 7 to about 8.

[0120]

[0120] (34) Embodiment (34) is a cationic polymer, N-vinylimidazole, 2-(dimethylamino)ethyl acrylate ("DMAEA"), 2-(dimethylamino)ethyl methacrylate ("DMAEM"), 3-(dimethylamino)propyl methacrylamide ("DMAPMA"), 3-(dimethylamino)propyl acrylamide ("DMAPA"), 3-methacrylamidepropyl-trimethyl-ammonium chloride ("MAPTAC"), 3-acrylamidepropyl-trimethyl-ammonium chloride ("APTAC"), diallyldimethylammonium chloride A method is presented according to any one of the embodiments (29) to (33), comprising cationic monomers selected from D ("DADMAC"), 2-(acryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEA.MCQ"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), N,N-dimethylaminoethyl acrylate benzyl chloride ("DMAEA.BCQ"), N,N-dimethylaminoethyl methacrylate benzyl chloride ("DMAEM.BCQ"), salts thereof, and combinations thereof.

[0121]

[0121] (35) Embodiment (35) presents the method according to Embodiment (34), wherein the cationic monomer is selected from N-vinylimidazole, diallyldimethylammonium chloride ("DADMAC"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), salts thereof, and combinations thereof.

[0122]

[0122] (36) Embodiment (36) presents the method according to any one of Embodiments (29) to (35), wherein the buffer is an amine compound containing 1 to 5 nitrogen atoms.

[0123]

[0123] (37) Embodiment (37) presents the method according to any one of Embodiments (29) to (36), wherein the buffer is a heterocyclic or heteroaromatic amine compound containing 1 to 5 nitrogen atoms.

[0124]

[0124] (38) Embodiment (38) presents a method according to any one of Embodiments (29) to (37), wherein the buffering agent comprises a heterocyclic or heteroaromatic amine selected from pyrrole, pyrrolidine, carbazole, isoindole, indole, pyrroline, indidine, indoline, pyridine, piperidine, quinolidine, isoquinoline, quinoline, naphthyridine, imidazole, imidazoline, imidazolidine, tetrazole, triazole, benimidazole, purine, benzoxazole, benzthiazole, isothiazole, isoxazole, thiazole, oxazole, morpholine, thiomorpholine, pyrazole, pyrazoline, pteridine, triazine, pyrimidine, pyrazine, piperazine, indazole, pyridazine, and combinations thereof.

[0125]

[0125] (39) Embodiment (39) presents the method according to any one of Embodiments (29) to (38), wherein the buffer is benzotriazole, 5-aminotetrazole, or a combination thereof.

[0126]

[0126] (40) Embodiment (40) presents a method according to any one of Embodiments (29) to (39), wherein the polishing composition further comprises a conductivity modifier selected from ammonium salts, potassium salts, and combinations thereof.

[0127]

[0127] (41) Embodiment (41) presents the method of Embodiment (40) wherein the conductivity modifier has a counterion selected from nitrates, acetates, halides, phosphates, and sulfates.

[0128]

[0128] (42) Embodiment (42) presents a method according to Embodiment (40) or Embodiment (41) in which the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

[0129]

[0129] (43) Embodiment (43) presents a method according to any one of Embodiments (29) to (42), wherein the polishing composition has an conductivity of at least 170 μS / cm.

[0130]

[0130] (44) Embodiment (44) presents a method according to any one of Embodiments (29) to (43), wherein the polishing composition has an conductivity of at least 350 μS / cm.

[0131]

[0131] (45) Embodiment (45) presents a method according to any one of Embodiments (29) to (44), wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and at least a portion of the silicon oxide, silicon nitride, or polysilicon is polished at a removal rate for polishing the substrate, with a silicon oxide removal rate, a silicon nitride removal rate, and a polysilicon removal rate.

[0132]

[0132] (46) Embodiment (46) presents the method according to Embodiment (45), wherein the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 20% of the overall average removal rate.

[0133]

[0133] (47) Embodiment (47) presents the method according to Embodiment (45), wherein the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 15% of the overall average removal rate.

[0134]

[0134] (48) Embodiment (48) presents the method according to Embodiment (45), wherein the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and each of the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate is within 10% of the overall average removal rate.

[0135]

[0135] (49) Embodiment (49) presents a method according to any one of Embodiments (29) to (45), wherein the polishing composition further comprises a nonionic polymer selected from polyalkylene glycol, polyetheramine, polyethylene oxide / polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkylene oxide copolymer, hydrophobic modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

[0136]

[0136] (50) Embodiment (50) presents the method according to Embodiment (49), wherein the nonionic polymer is polyvinylpyrrolidone.

[0137]

[0137] (51) Embodiment (51) presents the method according to Embodiment (49), wherein the nonionic polymer is polyalkylene glycol.

[0138]

[0138] (52) Embodiment (52) presents the method according to Embodiment (49), wherein the nonionic polymer is polyethylene oxide / polypropylene oxide copolymer.

[0139]

[0139] (53) Embodiment (53) presents a method according to any one of Embodiments (49) to (52), wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and at least a portion of the silicon oxide, silicon nitride, or polysilicon is polished at a removal rate for polishing the substrate at a silicon oxide removal rate, a silicon nitride removal rate, and a polysilicon removal rate, the silicon oxide removal rate, the silicon nitride removal rate, and the polysilicon removal rate having an overall average removal rate, and the polysilicon removal rate being at least 50% lower than the overall average removal rate.

[0140]

[0140] (54) Embodiment (54) presents the method according to Embodiment (53), wherein the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the polysilicon removal rate is at least 60% lower than the overall average removal rate.

[0141]

[0141] (55) Embodiment (55) presents the method according to Embodiment (5e), ​​wherein the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the polysilicon removal rate is at least 70% lower than the overall average removal rate.

[0142]

[0142] (56) Embodiment (56) presents a method according to any one of embodiments (29) to (45) and (49) to (52), wherein the polishing composition further comprises a cationic surfactant.

[0143]

[0143] (57) Embodiment (57) presents the method of Embodiment (56) wherein the cationic surfactant comprises a quaternary ammonium salt.

[0144]

[0144] (58) Embodiment (58) presents the method described in Embodiment (56) or Embodiment (57), wherein the cationic surfactant is selected from N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride, (oxydi-2,1-ethanediyl)bis(cocoalkyl)dimethylammonium dichloride, salts thereof, and combinations thereof.

[0145]

[0145] (59) Embodiment (59) presents a method according to any one of Embodiments (29) to (45), (49) to (52), and (56) to (58), wherein the polishing composition comprises two or more cationic polymers.

[0146]

[0146] (60) Embodiment (60) presents a method according to any one of Embodiments (29) to (45), (49) to (52), and (56) to (59), wherein the conductivity modifier is selected from diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

[0147]

[0147] (61) Embodiment (61) presents a method according to any one of embodiments (56) to (60), wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and at least a portion of the silicon oxide, silicon nitride, or polysilicon is polished at a removal rate for polishing the substrate at a silicon oxide removal rate, a silicon nitride removal rate, and a polysilicon removal rate, the silicon oxide removal rate, the silicon nitride removal rate, and the polysilicon removal rate having an overall average removal rate, and the silicon oxide removal rate being at least 50% lower than the overall average removal rate.

[0148]

[0148] (62) Embodiment (62) presents the method according to Embodiment (61), wherein the silicon dioxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon dioxide removal rate is at least 60% lower than the overall average removal rate.

[0149]

[0149] (63) Embodiment (63) presents the method according to Embodiment (61), wherein the silicon dioxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon dioxide removal rate is at least 70% lower than the overall average removal rate.

[0150]

[0150] (64) Embodiment (64) is a method according to any one of Embodiments (29) to (45), (49) to (52), and (56) to (63), wherein the polishing composition is of formula (I): A method is presented that further comprises a self-terminating agent of formula TIFF0007839885000003.tif25170 (wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted).

[0151]

[0151] (65) Embodiment (65) presents the method according to Embodiment (64), wherein the self-deactivating agent is selected from hydroxamic acid, acetohydroxamic acid, benzhydroxamic acid, salicylic acid, and combinations thereof.

[0152]

[0152] (66) Embodiment (66) presents the method according to Embodiment (64) or Embodiment (65), wherein the self-inhibiting agent is hydroxamic acid.

[0153]

[0153] (67) Embodiment (67) presents the method according to Embodiment (64) or Embodiment (65), wherein the self-deactivating agent is benzhydroxamic acid.

[0154]

[0154] (68) Embodiment (68) presents the method according to Embodiment (64) or Embodiment (65), wherein the self-deactivating agent is salicylohydroxamic acid.

[0155]

[0155] (69) Embodiment (69) presents a method according to any one of Embodiments (64) to (68), wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and at least a portion of the silicon oxide, silicon nitride, or polysilicon is polished at a removal rate for polishing the substrate at a silicon oxide removal rate, a silicon nitride removal rate, and a polysilicon removal rate, the silicon oxide removal rate, the silicon nitride removal rate, and the polysilicon removal rate having an overall average removal rate, and the silicon nitride removal rate being at least 50% lower than the overall average removal rate.

[0156]

[0156] (70) Embodiment (70) presents the method of Embodiment (69) in which the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon nitride removal rate is at least 60% lower than the overall average removal rate.

[0157]

[0157] (71) Embodiment (71) presents the method of Embodiment (69) in which the silicon oxide removal rate, silicon nitride removal rate, and polysilicon removal rate have an overall average removal rate, and the silicon nitride removal rate is at least 70% lower than the overall average removal rate. [Examples]

[0158] Examples

[0158] These following embodiments further illustrate the present invention, but of course should not be construed as limiting its scope.

[0159]

[0159] Throughout the examples, the following abbreviations will be used: removal rate (RR); tetraethyl orthosilicate (TEOS); silicon nitride (SiN); polysilicon (polySi); molecular weight (MW); and polyethylene glycol (PEG).

[0160]

[0160] In the following embodiments, a substrate, TEOS (i.e., silicon dioxide), polySi, or SiN was coated onto silicon and polished using a MIRRA® (Applied Materials, Inc.) polishing tool, an AP-300® (CTS Co., Ltd.) polishing tool, or a REFLEXION® (Applied Materials, Inc.) polishing tool. An IC1010® polishing pad (Rohm and Haas Electronic Materials) or a NEXPLANAR® E6088 polishing pad (Cabot Microelectronics, Aurora, IL) was used for all compositions with the same polishing parameters.

[0161]

[0161] Unless otherwise specified, the standard REFLEXION® polishing parameters are as follows: IC1010® pad, downforce = 20.68 kPa (3 psi), head speed = 85 rpm, platen speed = 100 rpm, and total flow rate = 250 mL / min.

[0162]

[0162] Unless otherwise specified, the standard AP-300(trademark) polishing parameters are as follows: IC1010(trademark) pad, downforce = 20.68 kPa (3 psi), head speed = 85 rpm, platen speed = 100 rpm, and total flow rate = 250 mL / min.

[0163]

[0163] Unless otherwise specified, standard MIRRA® polishing is as follows: IC1010® pad, downforce = 20.68 kPa (3 psi), head speed = 85 rpm, platen speed = 100 rpm, and total flow rate = 250 mL / min; or NEXPLANAR® E6088 pad, downforce = 13.79 kPa (2 psi), head speed = 85 rpm, platen speed = 100 rpm, and total flow rate = 250 mL / min.

[0164]

[0164] The removal rate was calculated by measuring the film thickness using spectroscopic ellipsometry and subtracting the final thickness from the initial thickness.

[0165] Example 1

[0165] This example demonstrates the preparation of a polishing composition according to the present invention, comprising (a) ceria abrasive particles, (b) a cationic polymer, and (c) a buffer, and optionally a cationic surfactant, a nonionic polymer, and / or a self-stopping agent. Polishing compositions 1A to 1O of the present invention were used in the following Examples 2 and 3 to demonstrate the efficiency of the polishing method described in the claims.

[0166]

[0166] For each of the polishing compositions 1A to 1O of the present invention used in Examples 2 and 3, ceria particles HC30™ and HC60™ (commercially available from Rhodia) were added in the amounts shown in Table 1. For example, for polishing composition 1A, 0.16% by weight of HC30™ and 0.16% by weight of HC60™ were added. The ceria particles were combined with a cationic polymer (for each of the polishing compositions 1A to 1O, polydiallyldimethylammonium chloride ("PolyDADMAC") and / or poly-2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("PolyMADQUAT")) and a buffer (for each of the polishing compositions 1A to 1O, 1H-benzotriazole ("BTA")). A biocide was further added to each of the polishing compositions 1A to 1O of the present invention, and the pH was adjusted to 7.5 using triethanolamine.

[0167]

[0167] The polishing compositions 1B to 1F, 1I, 1J, 1N, and 1O of the present invention further contained the cationic surfactant N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride ("Duoquad T-50 HF") in the amounts shown in Table 1.

[0168]

[0168] The polishing compositions 1C to 1J of the present invention further contained one or more nonionic polymers selected from PEG300, PEG1000, PEG4000, and PEG8000 in the amounts shown in Table 1.

[0169]

[0169] The polishing compositions 1K to 1O of the present invention further contained one or more self-detergents selected from salicylic acid ("SHA") and benzhydroxamic acid ("BHA") in the amounts shown in Table 1.

[0170]

[0170] The obtained compositions are summarized in Table 1. TIFF0007839885000004.tif211170

[0171] Example 2

[0171] This example demonstrates the beneficial polishing performance provided by a polishing composition containing a cationic surfactant and / or a nonionic polymer prepared according to the present invention.

[0172]

[0172] Patterned substrates containing TEOS, SiN, or polySi were polished on a 300 mm AP-300 (trademark) (CTS Co., Ltd) polishing tool using polishing compositions 1A-1E defined in Table 1 of Example 1, with IC1010 (trademark) pads (Rohm and Haas Electronic Materials) and Saesol C7 conditioner (Saesol Diamond Ind. Co., Ltd, South Korea) using the following parameters: platen speed of 93 rpm, head speed of 87 rpm, and slurry flow rate of 250 ml / min. The polishing time was 30 seconds. After polishing, the RR of TEOS, SiN, and polySi was measured, and the results are shown in Table 2. TIFF0007839885000005.tif136170

[0173]

[0173] As is clear from Table 2, polishing composition 1A of the present invention, which contains only HC-60(trademark), HC-30(trademark), polyMADQUAT and BTA, showed removal rates of 5682 Å / min and 3028 Å / min for silicon dioxide (i.e., TEOS), which was relatively fast compared to the removal rate of silicon nitride (1904 Å / min).

[0174]

[0174] Table 2 also shows that the addition of a cationic surfactant such as N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride ("Duoquad T-50 HF") reduces the polishing removal rate of silicon dioxide (i.e., TEOS) while maintaining the removal rates of polysilicon and silicon nitride, as is evident from the removal rate of polishing composition 1B compared to the removal rate of polishing composition 1A. Similarly, Table 2 also shows that the addition of a nonionic polymer such as PEG300, PEG1000, PEG4000, and / or PEG8000 reduces the polishing removal rate of polysilicon while maintaining the removal rates of silicon dioxide (i.e., TEOS) and silicon nitride, as is evident from the removal rate of polishing composition 1C compared to the removal rate of polishing composition 1B.

[0175]

[0175] Furthermore, Table 2 shows that polishing compositions 1D and 1E, which contain a cationic surfactant and a nonionic polymer, are non-selective to TEOS, SiN, or polySi. In other words, polishing compositions 1D and 1E showed removal rates of approximately 1:1:1 for TEOS:SiN:PolySi. Therefore, the polishing compositions of the present invention, which contain a cationic surfactant and a nonionic polymer, can be used to remove TEOS, SiN, or polySi at equal rates.

[0176] Example 3

[0176] This example demonstrates the beneficial polishing performance provided by a polishing composition containing a cationic surfactant, a nonionic polymer, and / or a self-stopping agent prepared according to the present invention.

[0177]

[0177] Patterned substrates containing TEOS, SiN, or polySi were polished on a 300 mm AP-300™ (CTS Co., Ltd) polishing tool using Saesol C7 conditioner (Saesol Diamond Ind. Co., Ltd, South Korea) with polishing compositions 1D and 1F-1O defined in Table 1 of Example 1, using the following parameters: downforce of 20.68 kPa (3 psi), slurry flow rate of 250 ml / min. The polishing time was 30 seconds. After polishing, the RR of TEOS, SiN, and polySi was measured, and the results are shown in Table 3. TIFF0007839885000006.tif183170

[0178]

[0178] As described in Example 2 above, polishing composition 1D was nonselective to TEOS, SiN, or polySi, and showed a removal rate of approximately 1:1:1 for TEOS:SiN:PolySi. As shown in the results for polishing compositions 1F to 1O of the present invention in Table 3, the selectivity of TEOS, SiN, or polySi can be improved by introducing additional components to the nonselective polishing composition 1D.

[0179]

[0179] As is clear from Table 3, polishing compositions 1F to 1H of the present invention, containing an additional cationic polymer (i.e., polyDADMAC), selectively reduced the removal rate of silicon dioxide (i.e., TEOS) from over 1500 Å / min to less than 350 Å / min while maintaining relatively consistent removal rates of SiN and PolySi. Similarly, polishing compositions 1I and 1J of the present invention demonstrate that polishing compositions containing a higher molecular weight nonionic polymer (i.e., PEG8000) can selectively reduce the removal rate of polysilicon. Furthermore, polishing compositions 1K to 1O of the present invention demonstrate that polishing compositions containing a self-stopping agent (i.e., SHA or BHA) and / or a cationic surfactant can reduce the removal rates of SiN and TEOS, respectively. Thus, the compositions of the present invention provided herein can be modified to transition from non-selective compositions (e.g., polishing composition 1D) to selective polishing compositions by adding a cationic surfactant, a nonionic polymer, and / or a self-stopping agent.

[0180]

[0180] All references cited herein, including publications, patent applications, and patents, are indicated individually and specifically, as if each reference were incorporated by reference, and are incorporated herein by reference to the same extent as if they were included in whole herein.

[0181]

[0181] In the context describing the present invention (particularly in the context of the following claims), the use of “a” and “an” and “the” and “at least one” and similar referents should be interpreted as encompassing both singular and plural forms unless otherwise indicated herein or unless the context clearly contradicts it. When the term “at least one” is followed by a list of one or more items (e.g., “at least one of A and B”), it should be interpreted as meaning one item selected from the listed items (A or B) or any combination of two or more listed items (A and B), unless otherwise indicated herein or unless the context clearly contradicts it. The terms “comprising,” “having,” “including,” and “containing” should be interpreted as open-ended terms (i.e., “including, but not limited to”) unless otherwise specified herein. The descriptions of value ranges in this specification are intended merely as a convenient way to refer individually to each individual value within that range, unless otherwise indicated herein, and each individual value is incorporated herein as if it were individually stated herein. All methods described herein may be carried out in any suitable order unless otherwise indicated herein or unless it is clearly inconsistent with the context. The use of any examples or exemplary expressions (e.g., "etc.") provided herein is solely for the purpose of better understanding the invention and does not limit the scope of the invention unless otherwise requested. Nothing in this specification should be construed as indicating that elements not described in the claims are essential to carrying out the invention.

[0182]

[0182] Preferred embodiments of the present invention are described herein, including the best modes known to the inventors for carrying out the present invention. Variations of these preferred embodiments will be apparent to those skilled in the art by reading the foregoing description. The inventors expect that those skilled in the art will adopt such variations as appropriate, and the inventors intend that the present invention will be carried out in ways other than those specifically described herein. Accordingly, the present invention includes all modifications and equivalents of the subject matter described in the appended claims, to the extent permitted by applicable law. Furthermore, unless otherwise indicated herein, or unless clearly contradicted by the context, any combination in any possible variation of the elements described above is encompassed by the present invention.

Claims

1. (a) Ceria abrasive particles; (b) Cationic polymers, including N-vinylimidazole, 2-(dimethylamino)ethyl acrylate ("DMAEA"), 2-(dimethylamino)ethyl methacrylate ("DMAEM"), 3-(dimethylamino)propyl methacrylamide ("DMAPMA"), 3-(dimethylamino)propyl acrylamide ("DMAPA"), 3-methacrylamidepropyl-trimethyl-ammonium chloride ("MAPTAC"), 3-acrylamidopropyl-trimethyl-ammonium chloride ("APTAC"), diallyldimethylammonium Cationic polymers comprising cationic monomers selected from muchlorides ("DADMAC"), 2-(acryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEA.MCQ"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), N,N-dimethylaminoethyl acrylate benzyl chloride ("DMAEA.BCQ"), N,N-dimethylaminoethyl methacrylate benzyl chloride ("DMAEM.BCQ"), their salts, and combinations thereof; (c) A buffering agent which is a heterocyclic or heteroaromatic amine compound containing 1 to 5 nitrogen atoms; and (d) Water A chemical mechanical polishing composition comprising, The polishing composition further comprises 10 ppm to 1000 ppm of a cationic surfactant, A chemical mechanical polishing composition having a pH of 6 to 9.

2. The polishing composition according to claim 1, wherein the polishing composition contains 0.001% to 10% by weight of ceria abrasive particles.

3. The polishing composition according to claim 1, wherein the polishing composition has a pH of 7 to 8.

4. The polishing composition according to claim 1, further comprising a nonionic polymer selected from polyalkylene glycol, polyetheramine, polyethylene oxide / polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkylene oxide copolymer, hydrophobic modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

5. The polishing composition according to claim 1, wherein the cationic surfactant is alkylammonium p-toluenesulfonate or alkylammonium chloride.

6. The polishing composition is of formula (I): The polishing composition according to claim 1, further comprising a self-stopping agent (wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted).

7. The polishing composition according to claim 1, further comprising a conductivity modifier selected from ammonium salts, potassium salts, and combinations thereof.

8. The polishing composition according to claim 7, wherein the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

9. The polishing composition according to claim 7, wherein the polishing composition has an electrical conductivity of at least 170 μS / cm.

10. The polishing composition according to claim 7, wherein the polishing composition has an electrical conductivity of at least 350 μS / cm.

11. A method for chemically and mechanically polishing a substrate, (i) To provide a substrate, (ii) To provide a polishing pad, (iii) (a) Ceria abrasive particles; (b) Cationic polymers, including N-vinylimidazole, 2-(dimethylamino)ethyl acrylate ("DMAEA"), 2-(dimethylamino)ethyl methacrylate ("DMAEM"), 3-(dimethylamino)propyl methacrylamide ("DMAPMA"), 3-(dimethylamino)propyl acrylamide ("DMAPA"), 3-methacrylamidepropyl-trimethyl-ammonium chloride ("MAPTAC"), 3-acrylamidopropyl-trimethyl-ammonium chloride ("APTAC"), diallyldimethylammonium Cationic polymers comprising cationic monomers selected from muchlorides ("DADMAC"), 2-(acryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEA.MCQ"), 2-(methacryloyloxy)-N,N,N-trimethylethaneaminium chloride ("DMAEM.MCQ"), N,N-dimethylaminoethyl acrylate benzyl chloride ("DMAEA.BCQ"), N,N-dimethylaminoethyl methacrylate benzyl chloride ("DMAEM.BCQ"), their salts, and combinations thereof; (c) A buffering agent which is a heterocyclic or heteroaromatic amine compound containing 1 to 5 nitrogen atoms; and (d) Water To provide a chemical mechanical polishing composition comprising a cationic surfactant further comprising 10 ppm to 1000 ppm of a cationic surfactant, and having a pH of 6 to 9. (iv) bringing the substrate into contact with the polishing pad and the chemical mechanical polishing composition, and (v) A method comprising moving a polishing pad and a chemical mechanical polishing composition against a substrate to polish at least a portion of the substrate.

12. The method according to claim 11, wherein the polishing composition comprises 0.001% to 10% by weight of ceria abrasive particles.

13. The method according to claim 11, wherein the polishing composition has a pH of 7 to 8.

14. The method according to claim 11, wherein the polishing composition further comprises a conductivity modifier selected from ammonium salts, potassium salts, and combinations thereof.

15. The method according to claim 14, wherein the conductivity modifier is selected from ammonium nitrate, ammonium chloride, ammonium bromide, ammonium acetate, potassium nitrate, potassium chloride, potassium bromide, potassium acetate, diallyldimethylammonium chloride, tetrabutylammonium bromide, tetramethylammonium bromide, tetraethylammonium bromide, benzyltrimethylammonium bromide, tetrabutylammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, benzyltrimethylammonium chloride, tetrabutylammonium acetate, tetramethylammonium acetate, tetraethylammonium acetate, benzyltrimethylammonium acetate, and combinations thereof.

16. The method according to claim 11, wherein the substrate comprises silicon oxide, silicon nitride, and polysilicon, and the substrate is polished by polishing at least a portion of the silicon oxide at a silicon oxide removal rate, at least a portion of the silicon nitride at a silicon nitride removal rate, and at least a portion of the polysilicon at a polysilicon removal rate.

17. The method according to claim 11, wherein the polishing composition further comprises a nonionic polymer selected from polyalkylene glycol, polyetheramine, polyethylene oxide / polypropylene oxide copolymer, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkylene oxide copolymer, hydrophobic modified polyacrylate copolymer, hydrophilic nonionic polymer, polysaccharide, and combinations thereof.

18. The method according to claim 11, wherein the polishing composition contains 10 ppm to 100 ppm of a cationic surfactant.

19. The polishing composition is of formula (I): The method according to claim 11, further comprising a self-terminating agent of the formula (wherein R is selected from hydrogen, alkyl, heteroalkyl, cycloalkyl, heterocycloalkyl, aryl, and heteroaryl, each of which may be substituted or unsubstituted).

20. The method according to claim 18, wherein the cationic surfactant is selected from N,N,N',N',N'-pentamethyl-N-fat alkyl-1,3-propanediammonium dichloride, (oxydi-2,1-ethanediyl)bis(cocoalkyl)dimethylammonium dichloride, salts thereof, and combinations thereof.

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