Measuring device

Abstract

To easily receive reflected light by an optical receiver when a light emitting device that emits light in an oblique direction irradiates light onto a measuring target, and reflected light reflected by the measuring target is received by the optical receiver, in comparison with a case where a substrate of the light emitting device and a light-receiving surface of the optical receiver are parallel.SOLUTION: A measuring device includes: a light emitting device with a substrate and a light emission part that emits light in an inclination direction inclined to a normal line of the substrate; and an optical receiver that receives reflected light emitted from the light emitting device and reflected by a measuring target on a light-receiving surface. When the angle between the light emitted from the light emitting device and the substrate of the light emitting device is set as angle θ1 (0°<θ1<90°), the angle θ2 between the substrate and the light receiving surface of the optical receiver satisfies 0°<θ2<180° - 2θ1.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention relates to a measuring device. [Background technology]

[0002] As prior art, Patent Document 1 discloses a semiconductor optical amplifier that includes a light source unit that emits laser light, and an optical amplification unit that is formed on a substrate and has an active region that extends from the light source unit in a predetermined direction along the substrate surface of the substrate, amplifies the propagating light that propagates from the light source unit in a predetermined direction, and emits the amplified propagating light in a direction intersecting the substrate surface. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-136655 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] When an object is irradiated with light by a light emitter equipped with a substrate and a light emitter that emits light in an oblique direction inclined with respect to the substrate's normal, and the reflected light reflected by the object to be measured is received by a light receiver, depending on the orientation of the substrate of the light emitter, it may be difficult for the light receiver to receive the reflected light. The present invention aims to make it easier for a light receiver to receive reflected light when a light emitter that emits light at an oblique angle irradiates an object to be measured, and the reflected light reflected from the object to be measured is received by a light receiver, compared to the case where the substrate of the light emitter and the light receiving surface of the light receiver are parallel. [Means for solving the problem]

[0005] The invention of claim 1 comprises a light emitter comprising a substrate and a light emitting section that emits light in an inclined direction inclined with respect to the substrate and the normal of the substrate, and a light receiver that receives reflected light emitted from the light emitter and reflected by an object to be measured, wherein when the angle between the light emitted from the light emitter and the substrate of the light emitter is angle θ1 (0° < θ1 < 90°), the angle θ2 between the substrate and the light receiving surface of the light receiver satisfies 0° < θ2 < 180° - 2θ1, the light emitting section of the light emitter extends in the longitudinal direction along the substrate and is arranged to approach the object to be measured from one end to the other in the longitudinal direction, emits light in the inclined direction inclined in the longitudinal direction, and is provided between the light emitting section of the light emitter and the object to be measured. As the light emitted from the light-emitting part passes through, The light emitter further comprises a light adjustment unit that reduces the difference in optical path length or time difference between the light emitted from one end and the other end in the longitudinal direction of the light emitter and the object to be measured, and when the direction in which the light that has passed through the light adjustment unit travels is inclined with respect to the normal of the light receiving surface, the light receiver is a measuring device provided on the side of the light emitter from which the light that has passed through the light adjustment unit travels. The invention of claim 2 is a measuring device according to claim 1, wherein the light adjustment unit is a prism with refractive index n, and when light emitted from the light emission unit is incident perpendicularly, and the angle between the incident surface and the emission surface is angle θ3, and the distance between the one end and the other end is distance Z, the following conditions are met: Z·cosθ1-Z·sinθ1 / tan(θ1+θ2)=Z·sinθ1·tanθ3·n. Claim 3 The invention is a measuring device according to claim 1, characterized in that the light emitter further comprises a diffuser plate provided between the light emitting unit and the object to be measured, which diffuses and transmits the light emitted from the light emitting unit toward the object to be measured. Claim 4 The invention is characterized in that the angle θ1 and the angle θ2 satisfy θ1 + θ2 = 90°. Any one of items 1 through 3 This is the measuring device described in [reference]. Claim 5 The invention is characterized in that the light emitter is positioned such that it gets closer to the object to be measured as it moves away from the light receiver, as described in 1 to 4 The measuring device is one of the items described in any one of the above. Claim 6 The invention is a measuring device according to claim 1, characterized in that the light receiver receives reflected light that is emitted from the light emitter and specularly reflected by the object to be measured. Claim 7 The invention is characterized in that, when the field of view of the light receiver is θr, the angles θ1 and θ2 satisfy 90°-θr < θ1+θ2 < 90°+θr. 6 This is the measuring device described in [reference]. Claim 8 The invention is characterized in that, when the distance between the light emitter and the object to be measured is L1, and the distance between the light receiver and the object to be measured is L2, the distance X along the light receiving surface between the light emitting part of the light emitter and the light receiver satisfies X = (L1 + L2) · tan(θ1 + θ2). 7 This is the measuring device described in [reference]. Claim 9 The invention is a measuring device according to claim 1, characterized in that the light receiver is provided in a position closer to the object to be measured compared to the light emitter. Claim 10 The invention further comprises a support member that supports the light emitter such that the substrate of the light emitter and the light receiving surface of the light receiver form the angle θ2, and the light receiver is supported by the support member together with the light emitter, as described in claim 1. Claim 11 The invention is a measuring device according to claim 1, further comprising a power supply unit for supplying power to the light emitting part of the light emitter, wherein the light emitter is further away from the object to be measured as it approaches the power supply unit. Claim 12 The invention is characterized in that the light receiver is positioned on the opposite side of the light emitter from the supply unit. 11 This is the measuring device described in [reference]. [Effects of the Invention]

[0006] Claim 1 、2 According to this invention, when an object to be measured is irradiated with light by a light emitter that emits light in an oblique direction, and the reflected light reflected by the object to be measured is received by a light receiver, the reflected light is more easily received by the light receiver compared to the case where the substrate of the light emitter and the light receiving surface of the light receiver are parallel. Claim 3According to the invention, when irradiating the object to be measured with the diffused light diffused by the diffusion plate, compared with the case where the substrate of the light emitter and the light receiving surface of the light receiver are parallel, it becomes easier for the light receiver to receive the reflected light. Claim 4 According to the invention, compared with the case where θ1 + θ2 does not satisfy 90°, the light emitted from the light emitter is more likely to be evenly irradiated onto the object to be measured. Claim 5 According to the invention, compared with the case where the light emitter is not arranged so as to approach the object to be measured as it approaches the light receiver, it is suppressed that the reflected light from the object to be measured is blocked by the light emitter. Claim 6 According to the invention, compared with the case where the substrate of the light emitter and the light receiving surface of the light receiver are parallel, the distance between the light emitter and the light receiver can be shortened. Claim 7 According to the invention, compared with the case where 90° - θr < θ1 + θ2 < 90° + θr is not satisfied, it becomes easier for the light receiver to receive the reflected light from the object to be measured. Claim 8 According to the invention, compared with the case where X = (L1 + L2)·tan(θ1 + θ2) is not satisfied, it becomes easier for the light receiver to receive the reflected light from the object to be measured. Claim 9 According to the invention, compared with the case where the light receiver is provided at a position farther from the object to be measured than the light emitter, it is suppressed that the reflected light from the object to be measured is blocked by the light emitter. Claim 10 According to the invention, compared with the case where neither the light emitter nor the light receiver is supported by the support member, the positional accuracy between the light emitter and the light receiver is improved. Claim 11 According to the invention, compared with the case where the light emitter is not far from the object to be measured as it approaches the supply unit, the connection path between the light emitter and the supply unit can be shortened. Claim 12 According to the invention, compared with the case where the light receiver is arranged on the same side as the supply unit with respect to the light emitter, it becomes easier to reduce the distance between the light receiver and the light emitter.

Brief Description of the Drawings

[0007] [Figure 1] This figure shows an example of the configuration of a distance measuring device to which Embodiment 1 is applied. [Figure 2] Figure 1 shows the distance measuring device as viewed from direction II. [Figure 3] This is a plan view of a semiconductor stacked structure to which this embodiment is applied. [Figure 4] This is a cross-sectional view along the line IV-IV shown in Figure 3. [Figure 5] This figure shows an example of the configuration of a distance measuring device different from the distance measuring device of this embodiment. [Figure 6] This figure shows an example of the configuration of a distance measuring device to which Embodiment 2 is applied. [Figure 7] This figure shows a modified example of a distance measuring device to which Embodiment 2 is applied. [Figure 8] This diagram illustrates the optical path length, etc., of light emitted from a semiconductor stacked structure to the object being measured in a distance measuring device. [Figure 9] This diagram illustrates the configuration of a distance measuring device to which Embodiment 3 is applied, and shows the configuration between the light emitter and the object to be measured. [Figure 10] This figure shows an example of the configuration of a distance measuring device to which Embodiment 4 is applied. [Figure 11] This figure shows a modified example of a distance measuring device to which Embodiment 4 is applied. [Figure 12] This is a plan view of a semiconductor stacked structure to which Embodiment 5 is applied. [Figure 13] This is a cross-sectional view along the line XIII-XIII shown in Figure 12. [Modes for carrying out the invention]

[0008] Embodiments of the present invention will be described in detail below with reference to the drawings. [Embodiment 1] (Distance measuring device 1) Figure 1 shows an example of the configuration of a distance measuring device 1 to which Embodiment 1 is applied. Figure 2 is a view of the distance measuring device 1 shown in Figure 1 from direction II. The distance measuring device 1 of this embodiment is used to measure the distance between the distance measuring device 1, which is an example of a measuring device, and an object to be measured OB, which is placed with a gap between the distance measuring device 1 and the object to be measured OB. As shown in Figure 1, the distance measuring device 1 comprises a light emitter 2 that emits light and a light receiver 3 that receives the reflected light emitted from the light emitter 2 and reflected by the object to be measured OB. Furthermore, the distance measuring device 1 comprises a PCB substrate 4 on which wiring for supplying power to the light emitter 2, etc., and a base 5 that supports the light emitter 2, the light receiver 3, and the PCB substrate 4. In addition, the distance measuring device 1 comprises an angle adjustment member 6 that adjusts the angle of the light emitter 2 with respect to the light receiver 3.

[0009] (Light emitter 2) As shown in Figure 1, the light emitter 2 comprises a semiconductor stacked structure 10 that emits light, an emission-side substrate 21 on which the semiconductor stacked structure 10 is mounted (hereinafter simply referred to as the substrate 21), and a diffuser plate 22 provided between the semiconductor stacked structure 10 and the object under measurement OB, which diffuses and transmits the light emitted from the semiconductor stacked structure 10 toward the object under measurement OB.

[0010] (Semiconductor stacked structure 10) The semiconductor stacked structure 10 is an example of a light-emitting section, and emits light in an oblique direction inclined with respect to the flat substrate 21 and the normal to the substrate 21. Here, the normal to the substrate 21 refers to a line extending perpendicularly from the surface of the flat substrate 21 on which the semiconductor stacked structure 10 is stacked. Figure 3 is a plan view of the semiconductor stacked structure 10 to which this embodiment is applied, and Figure 4 is a cross-sectional view along the line IV-IV shown in Figure 3. As shown in Figure 3, the semiconductor stacked structure 10 has a longitudinal direction LD and a short direction SD perpendicular to the longitudinal direction LD, and includes an optical coupling portion 11 provided at one end of the longitudinal direction LD and an optical amplification portion 12 extending from the optical coupling portion 11 along the longitudinal direction LD.

[0011] The optical coupling unit 11 couples a light source that generates seed light Ls, which is the input light to the semiconductor stacked structure 10. In the semiconductor stacked structure 10 of this embodiment, input light is propagated from an external light source (not shown) via an optical fiber OF, and the output end of the optical fiber OF is coupled to the optical coupling unit 11 to introduce the input light to the optical amplification unit 12. As the external light source, for example, a vertical cavity surface-emitting laser (VCSEL) is used. From the viewpoint of optical coupling efficiency, a lensed fiber may be used as the optical fiber OF.

[0012] The optical amplification unit 12 has the function of amplifying and emitting the seed light Ls coupled to the optical coupling unit 11. In this embodiment, the optical amplification unit 12 is, as an example, a surface emission type optical amplification unit using a distributed Bragg reflector waveguide (hereinafter referred to as a DBR (Distributed Bragg Reflector) waveguide) with a GaAs diameter. Specifically, the optical amplification unit 12 includes an N electrode 121 laminated on one side (back surface) of the base layer 120. The optical amplification unit 12 also includes a lower DBR layer 122, an active layer 123, an oxidative constriction layer 124, an upper DBR layer 125, and a P electrode 126, which are sequentially laminated on the other side (front surface) of the base layer 120.

[0013] In this embodiment, the base layer 120 is an n-type GaAs substrate, and an N electrode 121 is provided on the back surface of the base layer 120 that is ohmic connected to the n-type GaAs substrate. Furthermore, the lower DBR layer 122 is n-type, and the upper DBR layer 125 is p-type. When driving the semiconductor stacked structure 10, the positive electrode of the driving power supply is applied to the P electrode 126, and the negative electrode is applied to the N electrode 121, and a driving current is passed from the P electrode 126 to the N electrode 121. However, the polarity of the base layer 120, the lower DBR layer 122, and the upper DBR layer 125 is not limited to this, and their polarities may be reversed, that is, the base layer 120 may be a p-type GaAs substrate, the lower DBR layer 122 may be p-type, and the upper DBR layer 125 may be n-type.

[0014] The lower DBR layer 122, in conjunction with the upper DBR layer 125 described below, constitutes a resonator that contributes to light emission in the semiconductor multilayer structure 10. The lower DBR layer 122 is a multilayer reflector constructed by alternately stacking two semiconductor layers with different refractive indices and a film thickness of 0.25λ / n, where λ is the oscillation wavelength of the semiconductor multilayer structure 10 and n is the refractive index of the medium (semiconductor layer). As a specific example, the lower DBR layer 122 is made of Al 0.90 Ga 0.1 An n-type low refractive index layer made of As, and Al 0.2 Ga 0.8 It is constructed by alternately stacking n-type high refractive index layers made of As.

[0015] The active layer 123 according to this embodiment may include, for example, a lower spacer layer (not shown), a quantum well active region, and an upper spacer layer. The quantum well active region according to this embodiment may be, for example, four layers of Al 0.3 Ga 0.7 The structure may consist of a barrier layer made of As and a quantum well layer made of three layers of GaAs placed between them. The lower spacer layer and the upper spacer layer are positioned between the quantum well active region and the lower DBR layer 122, and between the quantum well active region and the upper DBR layer 125, respectively, and serve to adjust the length of the resonator as well as function as cladding layers for confining carriers.

[0016] The oxidation-constricting layer 124 provided on the active layer 123 comprises a non-oxidizing region 124a and an oxidizing region 124b. The oxidizing region 124b is a region where current does not easily flow, while the non-oxidizing region 124a is a region where current easily flows. In other words, the oxidation-constricting layer 124 narrows the current flow path in the semiconductor multilayer structure 10. In this embodiment, the oxidized narrow layer 124 is formed by one layer on the base layer 120 side among the multilayer films constituting the upper DBR layer 125 described later. That is, by oxidizing a part of the one layer constituting the upper DBR layer 125, an oxidized region 124b is formed, and the non-oxidized region other than the oxidized region 124b becomes a non-oxidized region 124a. In this embodiment, a form in which the oxidized narrow layer 124 is formed in one layer of the upper DBR layer 125 will be exemplified and described, but it is not limited to this, and the oxidized narrow layer 124 may be formed in a plurality of layers of the upper DBR layer 125, or the oxidized narrow layer 124 may be formed in the lower DBR layer 122.

[0017] The upper DBR layer 125 is a multilayer film reflector formed by alternately and repeatedly stacking two semiconductor layers each having a film thickness of 0.25λ / n and different refractive indexes. As a specific example, the upper DBR layer 125 is composed of 0.90 Ga 0.1 a p-type low refractive index layer made of Al 0.2 Ga 0.8 As and a p-type high refractive index layer made of Al

[0018] Here, the optical amplification unit 12 of this embodiment, which is a DBR waveguide, will be described in more detail. The seed light Ls introduced from the optical coupling unit 11 propagates in the optical amplification unit 12 in the propagation direction from the left side to the right side of FIGS. 3 and 4 (the longitudinal direction LD of the semiconductor laminate 10). At this time, as shown in FIG. 4, the propagating light mainly propagates through the lower DBR layer 122, the active layer 123, the non-oxidized region 124a of the oxidized narrow layer 124, and the upper DBR layer 125 with a predetermined distribution. Therefore, the "DBR waveguide" is constituted including these parts.

[0019] The semiconductor multilayer structure 10, which uses an optical amplification unit 12 that is a DBR waveguide, is composed of a pair of DBRs (lower DBR layer 122, upper DBR layer 125) provided on the base layer 120, and an active layer 123 and an oxide constriction layer 124 located between the pair of DBRs. The region sandwiched between the DBRs functions as an optical waveguide, and light input into this optical waveguide propagates as slow light while undergoing multiple reflections in an oblique direction. When current is injected into the active layer 123 by the P electrode 126 and N electrode 121 provided on both sides of the DBR waveguide, the input light is amplified, and the amplified light is output in a direction that intersects the base layer 120 and the normal to the base layer 120, and is tilted forward in the propagation direction of the propagating light in the optical amplification unit 12 (longitudinal direction LD). In Figure 4 and Figure 1 described above, the light output from the optical amplification unit 12 and emitted to the outside from the semiconductor multilayer structure 10 is shown as the emitted light Lf.

[0020] In other words, the optical amplification section 12 in the semiconductor stacked structure 10, which is the region where the P electrode 126 and the N electrode 121 are provided (the region sandwiched between the P electrode 126 and the N electrode 121), has both the function of propagating light and the function of amplifying light. The light amplified by the optical amplification section 12 of the semiconductor stacked structure 10 is emitted as emitted light Lf in a direction intersecting the base layer 120 and the normal to the base layer 120. Furthermore, the optical input to the optical amplification unit 12 is achieved by creating an optical incident section (optical coupling section 11) with reduced reflectivity by removing a portion of the DBR through etching, and coupling external light by obliquely incident light. As will be described in detail later, the optical input to the optical amplification unit 12 may also be achieved by integrating a light source (seed light section) laterally as part of the semiconductor stacked structure 10 and propagating the light that seeps into the optical amplification unit 12.

[0021] (Circuit board 21) Returning to Figures 1 and 2, the substrate 21 of the light emitter 2 has a semiconductor stack structure 10 mounted on one side (the upper side in Figure 1). Furthermore, wiring for supplying power to the semiconductor stacked structure 10 is formed on the substrate 21. Specifically, as shown in Figure 2, anode wiring 211 connected to the P electrode 126 (see Figure 4) of the semiconductor stacked structure 10 and cathode wiring 212 connected to the N electrode 121 (see Figure 4) of the semiconductor stacked structure 10 are formed on the substrate 21. In this example, the anode wiring 211 of the substrate 21 and the P electrode 126 of the semiconductor stacked structure 10 are connected via a plurality of bonding wires 213. In addition, the cathode wiring 212 of the substrate 21 and the N electrode 121 of the semiconductor stacked structure 10 are connected by the semiconductor stacked structure 10 being stacked on the cathode wiring 212 of the substrate 21.

[0022] As described above, the semiconductor stacked structure 10 mounted on the substrate 21 emits light Lf in a direction intersecting the base layer 120 and the normal to the base layer 120. Therefore, in the light emitter 2 of this embodiment, the semiconductor stacked structure 10 emits light Lf in an oblique direction inclined with respect to the substrate 21 and the normal to the substrate 21. Hereinafter, the angle between the substrate 21 and the emitted light Lf in a cross section perpendicular to the short side direction SD of the semiconductor stacked structure 10 may be denoted as the emission angle θ1. The emission angle θ1 satisfies 0 < θ1 < 90°. Note that the emission angle θ1 varies depending on the configuration of the semiconductor stacked structure 10, but it is preferably 30° < θ1 < 60°.

[0023] (Diffuser plate 22) The diffuser plate 22 of the light emitter 2 diffuses the emitted light Lf from the semiconductor multilayer structure 10 at a predetermined diffusion angle θt and transmits it toward the object OB to be measured. The diffusion angle θt is the angle at which the light transmitted through the diffuser plate 22 diffuses with respect to the optical axis direction of the light incident on the diffuser plate 22. The diffuser plate 22 is supported at a predetermined angle with respect to the semiconductor laminated structure 10 such that the emitted light Lf from the semiconductor laminated structure 10 is incident perpendicularly on it.

[0024] (Receiver 3) The light receiver 3 comprises a light-receiving substrate 31 mounted on a base 5, a light-receiving sensor 32 mounted on the light-receiving substrate 31 that receives reflected light from the object under measurement OB and outputs an electrical signal, and a filter 33 provided between the light-receiving sensor 32 and the object under measurement OB that transmits light of a predetermined wavelength.

[0025] The light receiving sensor 32 receives light (reflected light) that has been reflected by the object OB under measurement and passed through the filter 33 on its light receiving surface 32a, and outputs an electrical signal corresponding to the amount of light received. The light receiving sensor 32 is composed of, for example, a photodiode or a phototransistor. The electrical signal from the light receiving sensor 32 is output to a calculation unit (not shown) composed of a CPU (Central Processing Unit) or ASIC (application specific integrated circuit), etc. In the calculation unit, predetermined calculation processing is performed on the electrical signal from the light receiving sensor 32 to calculate the distance between the distance measuring device 1 and the object OB under measurement. In this example, the light receiving sensor 32 is positioned horizontally along the left-right direction in the figure, as shown in Figure 1, so that the light receiving surface 32a faces the object OB to be measured. The light receiving sensor 32 is also capable of receiving light within a predetermined light receiving field of view angle θr with respect to the normal of the light receiving surface 32a.

[0026] (PCB board 4) On the PCB substrate 4, wiring is formed that connects to the wiring formed on the substrate 21 of the light emitter 2. Specifically, on the PCB substrate 4, there is an anode wiring 41 that connects to the anode wiring 211 of the substrate 21, and a cathode wiring 42 that connects to the cathode wiring 212 of the substrate 21. In this example, the anode wiring 41 of the PCB substrate 4 is connected to the anode wiring 211 of the substrate 21 by solder 45. Similarly, the cathode wiring 42 of the PCB substrate 4 is connected to the cathode wiring 212 of the substrate 21 by solder 45. Furthermore, the anode wiring 41 and cathode wiring 42 of the PCB substrate 4 are connected to a power supply (not shown). As a result, in the distance measuring device 1 of this embodiment, power is supplied to the semiconductor laminated structure 10 of the light emitter 2 via the anode wiring 41 and cathode wiring 42 formed on the PCB substrate 4, and the anode wiring 211 and cathode wiring 212 formed on the substrate 21.

[0027] (Base 5) The base 5 collectively supports the light emitter 2, the light receiver 3, the PCB substrate 4, and the angle adjustment member 6. Furthermore, the base 5 supports the light emitter 2 and the light receiver 3 such that the distance between them is predetermined.

[0028] (Angle adjustment member 6) The angle adjustment member 6 supports the substrate 21 of the light emitter 2 and adjusts the angle between the substrate 21 and the light receiving surface 32a of the light receiving sensor 32 of the light receiver 3 to a predetermined angle. The angle adjustment member 6 has the same cross-sectional shape as shown in Figure 1, extending from one end to the other in the short-side direction SD of the semiconductor stacked structure 10. As shown in Figure 1, the angle adjustment member 6 has an inclined surface 6a that forms a predetermined angle with respect to the light-receiving surface 32a of the light-receiving sensor 32. In the distance measuring device 1 of this embodiment, the substrate 21 is placed on the inclined surface 6a of the angle adjustment member 6, so that the substrate 21 and the light-receiving surface 32a of the light-receiving sensor 32 of the light-receiving device 3 form a predetermined angle. Hereinafter, the angle between the substrate 21 of the light-emitting device 2 and the light-receiving surface 32a of the light-receiving sensor 32 of the light-receiving device 3 will be referred to as the substrate angle θ2. The substrate angle θ2 will be explained in detail later.

[0029] By the way, when a light emitter 2, which includes a substrate 21 and a semiconductor stacked structure 10 that emits light in an oblique direction inclined with respect to the normal of the substrate 21, irradiates the object to be measured OB with light, and the reflected light reflected from the object to be measured OB is received by a light receiver 3, depending on the orientation of the substrate 21 of the light emitter 2, it may be difficult for the light receiver 3 to receive the reflected light. Figure 5 shows an example of the configuration of a distance measuring device (hereinafter referred to as distance measuring device 1A) that is different from the distance measuring device 1 of this embodiment. In Figure 5, the same reference numerals are used for components that are the same as those in the distance measuring device 1 of this embodiment shown in Figures 1, 2, etc.

[0030] In the distance measuring device 1A shown in Figure 5, the light emitter 2 and the light receiver 3 are positioned on the base 5 such that the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiving sensor 32 of the light receiver 3 are parallel. When the substrate 21 and the light receiving surface 32a are parallel, in the distance measuring device 1A, the angle between the reflected light emitted from the semiconductor multilayer structure 10 of the light emitter 2 and the object under measurement OB tends to be smaller than the light receiving field of view angle θr. In this case, it is difficult for the light receiving sensor 32 to receive the reflected light from the object under measurement OB.

[0031] In the distance measuring device 1A shown in Figure 5, in order to make it easier for the light receiving sensor 32 of the light receiver 3 to receive the reflected light emitted from the light emitter 2 and reflected by the object to be measured OB, it is preferable to make the light receiving field of view θr of the light receiving sensor 32 larger by the emission angle θ1 than the diffusion angle θt of the diffuser plate 22 in the light emitter 2. However, when the light receiving field of view θr of the light receiving sensor 32 is increased, while it becomes easier for the light receiving sensor 32 to receive the reflected light, the range within the light receiving field of view θr of the light receiving sensor 32 that does not contribute to the reception of reflected light also widens, which tends to increase waste.

[0032] In contrast, in the distance measuring device 1 of this embodiment, the angle of the light emitter 2 relative to the light receiver 3 is adjusted using the angle adjustment member 6, making it easier for the light receiver 3 to receive reflected light from the object to be measured OB compared to, for example, the case where the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiver 3 are parallel. The relationship between the light emitter 2 and the light receiver 3 in the distance measuring device 1 will be explained in more detail below, mainly with reference to Figure 1. In this embodiment, each angle described refers to the angle in a cross-section obtained by cutting the distance measuring device 1 with a plane perpendicular to the short side direction SD of the semiconductor stacked structure 10 of the light emitter 2.

[0033] As described above, the emission angle θ1 is defined as the angle between the emitted light Lf emitted from the semiconductor multilayer structure 10 of the light emitter 2 and the substrate 21 of the light emitter 2. Since the semiconductor multilayer structure 10 emits light in an oblique direction inclined with respect to the substrate 21 and the normal to the substrate 21, the emission angle θ1 is 0° < θ1 < 90°. As described above, if the angle between the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiving sensor 32 of the light receiver 3 is denoted as the substrate angle θ2, then in the distance measuring device 1 of this embodiment, the emission angle θ1 and the substrate angle θ2 satisfy the following equation (1). 0°<θ²<180°-2θ¹ ···(1)

[0034] In the distance measuring device 1 of this embodiment, the emission angle θ1 and the substrate angle θ2 satisfy equation (1). Compared to the case where equation (1) is not satisfied, for example, when the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiving sensor 32 of the light receiver 3 are parallel (i.e., when θ1 = 0°), the direction of propagation of light emitted from the semiconductor stacked structure 10 is closer to the direction perpendicular to the light receiving surface 32a (the up and down direction in Figure 1). As a result, in the distance measuring device 1 of this embodiment, compared to the case where the emission angle θ1 and the substrate angle θ2 do not satisfy equation (1), it becomes easier for the light receiving sensor 32 of the light receiver 3 to receive reflected light from the object to be measured OB. In addition, in the distance measuring device 1 of this embodiment, even if the light receiving field of view θr of the light receiving sensor 32 is not made larger than the diffusion angle θt of the diffuser plate 22 in the light emitter 2, the reflected light from the object to be measured OB is more easily received by the light receiving sensor 32 of the light receiver 3. As a result, it becomes less likely that a range will occur within the range of the light receiving field of view θr of the light receiving sensor 32 that does not contribute to the reception of reflected light.

[0035] In the distance measuring device 1, it is preferable that the sum of the emission angle θ1 and the substrate angle θ2 is 90° (θ1 + θ2 = 90°). A sum of 90° between the emission angle θ1 and the substrate angle θ2 makes it easier for the direction in which light is emitted from the semiconductor laminated structure 10 of the light emitter 2 to coincide with the direction perpendicular to the light-receiving surface 32a of the light-receiving sensor 32. This makes it easier for the reflected light emitted from the semiconductor laminated structure 10 of the light emitter 2 and reflected by the object under measurement OB to be received by the light-receiving sensor 32. Furthermore, when the object under measurement OB is positioned vertically to the light emitter 2, a sum of 90° between the emission angle θ1 and the substrate angle θ2 makes it easier for the light emitted from the semiconductor laminated structure 10 of the light emitter 2 to irradiate the object under measurement OB evenly. This improves the measurement accuracy of the distance measuring device 1. Furthermore, the statement that the sum of the emission angle θ1 and the substrate angle θ2 is 90° (θ1+θ2=90°) does not mean that θ1+θ2=90° must be strictly satisfied for all light emitted from the semiconductor stacked structure 10; it is sufficient that at least some of the light yields results equivalent to those obtained when θ1+θ2=90°. Although laser light has strong directional properties, it does spread to some extent, so the direction of the light emitted from the semiconductor stacked structure 10 changes due to variations within the emission surface, component precision and variations, etc.

[0036] Furthermore, in the distance measuring device 1, the light emitter 2 is positioned such that as the substrate 21 and the semiconductor stacked structure 10 mounted on the substrate 21 approach the anode wiring 41 and cathode wiring 42, which are examples of supply sections formed on the PCB substrate 4, the emitter 2 moves away from the object under measurement OB. In addition, at the position on the substrate 21 furthest from the object under measurement OB (i.e., the position closest to the PCB substrate 4), the anode wiring 211 and cathode wiring 212 formed on the substrate 21 are connected to the anode wiring 41 and cathode wiring 42 of the PCB substrate 4, respectively. This shortens the connection path between the anode wiring 211 and cathode wiring 212 formed on the substrate 21 of the light emitter 2 and the anode wiring 41 and cathode wiring 42 formed on the PCB substrate 4, leading to a miniaturization of the distance measuring device 1.

[0037] Furthermore, in the distance measuring device 1, the light receiver 3 is positioned on the opposite side (right side in Figure 1) from the anode wiring 41 and cathode wiring 42 formed on the PCB substrate 4 relative to the light emitter 2. In this case, interference between the light receiver 3 and the anode wiring 41 and cathode wiring 42 on the PCB substrate 4, or the power supply that supplies power to the anode wiring 41 and cathode wiring 42, is reduced. As a result, the distance between the light emitter 2 and the light receiver 3 can be reduced compared to the case where the light receiver 3 is positioned on the same side (left side in Figure 1) as the anode wiring 41 and cathode wiring 42 on the PCB substrate 4 relative to the light emitter 2, leading to a smaller distance measuring device 1.

[0038] [Embodiment 2] Next, Embodiment 2 of the present invention will be described. Figure 6 is a diagram showing an example of the configuration of the distance measuring device 1 to which Embodiment 2 is applied, and, similar to Figure 1, corresponds to a view of the distance measuring device 1 along the short side direction SD of the semiconductor stacked structure 10 in the light emitter 2. Note that in Figure 6, the wiring and the like formed on the PCB substrate 4 and substrate 21 are omitted. In Embodiment 2, the same reference numerals are used for the same components as in Embodiment 1, and detailed explanations are omitted here.

[0039] In the distance measuring device 1 of the embodiment described above, the emitted light Lf from the semiconductor stacked structure 10 is diffused by the diffuser plate 22, the diffused light is irradiated onto the object to be measured OB, and the reflected light from the object to be measured OB is received by the light receiver 3. In contrast, the distance measuring device 1 of Embodiment 2 shown in Figure 6 does not have a diffuser plate 22 (see Figure 1) that diffuses the emitted light Lf emitted from the semiconductor stacked structure 10. Instead, the distance measuring device 1 of Embodiment 2 directly irradiates the object to be measured OB with the emitted light Lf emitted from the semiconductor stacked structure 10, and the reflected light specularly reflected by the object to be measured OB is received by the light receiver 3.

[0040] Here, in the distance measuring device 1 of the second embodiment, similar to the first embodiment, the emission angle θ1 formed between the emitted light Lf emitted from the semiconductor stacked structure 10 and the substrate 21, and the substrate angle θ2 formed between the substrate 21 and the light-receiving surface 32a of the light-receiving sensor 32, satisfy the above-described equation (1). As a result, in the distance measuring device 1 of the second embodiment, compared to the case where the emission angle θ1 and the substrate angle θ2 do not satisfy equation (1), it becomes easier for the light receiving sensor 32 of the light receiving device 3 to receive reflected light from the object being measured OB. Furthermore, in the distance measuring device 1 of the second embodiment, compared to the case where the emission angle θ1 and the substrate angle θ2 do not satisfy equation (1), the distance between the light emitter 2 and the light receiving device 3 (distance X, described later, see Figure 6) at which reflected light enters the light receiving sensor 32 of the light receiving device 3 becomes shorter, leading to miniaturization of the distance measuring device 1.

[0041] In the distance measuring device 1 shown in Figure 6, the sum of the emission angle θ1 and the substrate angle θ2 (θ1+θ2) is less than 90° (0°<θ1+θ2<90°). In this case, in the distance measuring device 1, it is preferable that the light receiver 3 be positioned adjacent to the light emitter 2 on the side of the light emitter 2 that is closer to the object OB (right side in Figure 6), from the viewpoint of making it easier for the light receiver 32 of the light receiver 3 to receive reflected light from the object OB of the object to be measured.

[0042] Furthermore, in the distance measuring device 1 of the second embodiment, it is preferable that the sum of the emission angle θ1 and the substrate angle θ2 (θ1+θ2) satisfies the following equation (2) in relation to the light receiving field of view angle θr of the light receiver 3. 90°-θr<θ1+θ2<90° (2) When the sum of the emission angle θ1 and the substrate angle θ2 satisfies equation (2), reflected light from the object under measurement OB is more likely to enter the light receiving field of view θr of the light receiver 3. As a result, compared to the case where the sum of the emission angle θ1 and the substrate angle θ2 does not satisfy equation (2), it becomes easier for the light receiving sensor 32 of the light receiver 3 to receive reflected light from the object under measurement OB.

[0043] Furthermore, if the distance L1 is the distance between the semiconductor multilayer structure 10 of the light emitter 2 and the object under measurement OB, and the distance L2 is the distance between the light receiving surface 32a of the light receiver 3 and the object under measurement OB, then it is preferable that the distance X along the light receiving surface 32a between the semiconductor multilayer structure 10 of the light emitter 2 and the light receiving surface 32a of the light receiver 3 satisfies the following equation (3). X=(L1+L2)·tan(θ1+θ2) ···(3) When the distance X satisfies equation (3), the light-receiving surface 32a of the light-receiving sensor 32 is more likely to be positioned in the direction of propagation of the reflected light from the object OB in the second embodiment of the distance measuring device 1. As a result, the reflected light from the object OB is more easily received by the light-receiving sensor 32 of the light receiver 3 compared to the case where the distance X does not satisfy equation (3).

[0044] Here, distance L1 is the distance between the center of the longitudinal LD ​​(see Figure 2) of the semiconductor stacked structure 10 and the object under measurement OB, along the direction perpendicular to the light-receiving surface 32a of the light-receiving device 3 (the distance along the vertical direction in Figure 6). Distance L2 is the distance between the center of the light-receiving surface 32a and the object under measurement OB, along the direction perpendicular to the light-receiving surface (the distance along the vertical direction in Figure 6). Furthermore, distance X is the distance along the light-receiving surface 32a between the center of the semiconductor stacked structure 10 and the center of the light-receiving surface 32a (the distance along the horizontal direction in Figure 6).

[0045] Next, a modified example of the distance measuring device 1 of Embodiment 2 will be described. Figure 7 shows a modified example of the distance measuring device 1 to which Embodiment 2 is applied, and, similar to Figure 6, it is a view of the distance measuring device 1 along the short side direction SD of the semiconductor stacked structure 10 in the light emitter 2. In Figure 7, the same reference numerals are used for components that are the same as those in the distance measuring device 1 shown in Figure 6.

[0046] In the distance measuring device 1 shown in Figure 6, the sum of the emission angle θ1 and the substrate angle θ2 (θ1+θ2) is less than 90°, whereas in the modified distance measuring device 1 shown in Figure 7, the sum of the emission angle θ1 and the substrate angle θ2 (θ1+θ2) is 90° or more and less than 180° (90°≦θ1+θ<180°). In the distance measuring device 1 shown in Figure 7, it is preferable that the light receiver 3 be positioned adjacent to the light emitter 2 on the side of the light emitter 2 that is furthest from the object OB (left side in Figure 7), in order to facilitate the reception of reflected light from the object OB by the light receiving sensor 32 of the light receiver 3.

[0047] Furthermore, in the distance measuring device 1 shown in Figure 7, the emission angle θ1 formed between the emitted light Lf emitted from the semiconductor stacked structure 10 and the substrate 21, and the substrate angle θ2 formed between the substrate 21 and the light-receiving surface 32a of the light-receiving sensor 32, satisfy the above-described equation (1). As a result, in the distance measuring device 1 of the second embodiment, compared to the case where the emission angle θ1 and the substrate angle θ2 do not satisfy equation (1), it becomes easier for the light receiving sensor 32 of the light receiving device 3 to receive reflected light from the object to be measured OB.

[0048] Furthermore, in the distance measuring device 1 shown in Figure 7, it is preferable that the sum of the emission angle θ1 and the substrate angle θ2 (θ1+θ2) satisfies the following equation (4) in relation to the light receiving field of view θr of the light receiver 3. 90°≦θ1+θ2<90°+θr (4) When the sum of the emission angle θ1 and the substrate angle θ2 satisfies equation (4), reflected light from the object under measurement OB is more likely to enter inside the receiving field of view θr of the light receiver 3. As a result, compared to the case where the sum of the emission angle θ1 and the substrate angle θ2 does not satisfy equation (4), it becomes easier for the light receiver sensor 32 of the light receiver 3 to receive reflected light from the object under measurement OB.

[0049] Furthermore, similar to the example shown in Figure 6, if the distance L1 is the distance between the semiconductor multilayer structure 10 of the light emitter 2 and the object OB to be measured, and the distance L2 is the distance between the light receiving surface 32a of the light receiver 3 and the object OB to be measured, then it is preferable that the distance X along the light receiving surface 32a between the semiconductor multilayer structure 10 of the light emitter 2 and the light receiving surface 32a of the light receiver 3 satisfies the above equation (3). When distance X satisfies equation (3), the light-receiving surface 32a of the light-receiving sensor 32 is more likely to be positioned in the direction of propagation of reflected light from the object OB in the distance measuring device 1 shown in Figure 7. As a result, compared to the case where distance X does not satisfy equation (3), it becomes easier for the light-receiving sensor 32 of the light receiver 3 to receive reflected light from the object OB.

[0050] As described above, even when the light emitter 2 does not have a diffuser plate 22 (see Figure 1), and the light receiver 3 receives the reflected light that is specularly reflected from the object OB being measured, as shown in the distance measuring device 1 in Figures 6 and 7, the above equation (1) is satisfied, making it easier for the light receiving sensor 32 of the light receiver 3 to receive the reflected light from the object OB being measured.

[0051] Furthermore, in the distance measuring device 1 shown in Figures 6 and 7, it is preferable that the relationship between the sum of the emission angle θ1 and the substrate angle θ2 shown in equations (2) and (4) above (θ1+θ2) and the light receiving field of view θr of the light receiver 3 satisfies the following equation (5). 90°-θr<θ1+θ2<90°+θr …(5) By satisfying equation (5), the distance measuring device 1 makes it easier for the light receiving sensor 32 of the light receiver 3 to receive reflected light from the object being measured OB, compared to the case where equation (5) is not satisfied.

[0052] [Embodiment 3] Incidentally, in the distance measuring device 1, when irradiating the object to be measured OB with light using a semiconductor stacked structure 10 having a longitudinal LD, there may be a difference in the optical path length from one end of the longitudinal LD ​​in the semiconductor stacked structure 10 to the object to be measured OB between the other end. Furthermore, in the distance measuring device 1, there may be a difference in the time it takes for the light emitted from the semiconductor stacked structure 10 to reach the object to be measured OB between the one end of the longitudinal LD ​​in the semiconductor stacked structure 10 and the other end. In this case, errors may occur in the output result from the light receiving sensor 32 that receives the reflected light from the object to be measured OB. Figure 8 is a diagram illustrating the optical path length, etc., of the light emitted from the semiconductor stacked structure 10 to the object OB being measured in the distance measuring device 1. Note that the distance measuring device 1 shown in Figure 8 has the same configuration as the distance measuring device 1 shown in Figure 6.

[0053] As shown in Figure 8, in the distance measuring device 1, if Z is the length along the longitudinal LD ​​of the semiconductor stacked structure 10, the difference Δd1 in the optical path length from one end (left side in Figure 8) and the other end (right side in Figure 8) of the longitudinal LD ​​in the semiconductor stacked structure 10 to the object under measurement OB is expressed by the following equation (6). Δd1=Z·cosθ1-Z·sinθ1 / tan(θ1+θ2) …(6) The time difference between the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and the object OB under measurement is expressed as Δd1 / c, where c is the speed of light.

[0054] Figure 9 is a diagram illustrating the configuration of the distance measuring device 1 (see Figure 8) to which Embodiment 3 is applied, and shows the configuration between the light emitter 2 and the object to be measured OB. The distance measuring device 1 of the third embodiment includes a prism 9, which is an example of a light adjustment unit, between the light emitter 2 and the object OB, with respect to reducing the time difference Δd1 / c from the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 to the object OB to be measured.

[0055] To explain in more detail, as shown in Figure 9, the prism 9 has an incident surface 91 facing the semiconductor stacked structure 10, into which light emitted from the semiconductor stacked structure 10 is incident, and an exit surface 92 that is inclined at a predetermined angle θ3 (0° < θ3 < 90°) with respect to the incident surface 91, and from which light that has passed through the prism 9 is emitted. Furthermore, as shown in Figure 9, the cross-sectional shape of the prism 9 in a plane perpendicular to the short side direction SD of the semiconductor stacked structure 10 is triangular. Furthermore, in the distance measuring device 1 of this embodiment, the prism 9 is positioned such that the emitted light Lf from the semiconductor stacked structure 10 is incident perpendicularly to the incident surface 91.

[0056] Here, the difference in optical path length Δd2 (the difference in optical path length from the incident surface 91 to the exit surface 92) of light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and entering the prism 9 is expressed by the following equation (7). Δd² = Z·sinθ¹·tanθ³ …(7) Furthermore, since the speed of light traveling through the prism 9 is c / n, where n is the refractive index of the prism 9, the time difference between the incident surface 91 and the exit surface 92 of the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and entering the prism 9 can be expressed as Δd²·n / c.

[0057] In this embodiment, it is preferable to determine the shape of the prism 9 (the angle θ3 between the incident surface 91 and the exit surface 92 of the prism 9) and the refractive index n of the prism 9 such that Δd1 = Δd2·n. As a result, in the distance measuring device 1, the difference in optical path length and time difference between the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and the object under measurement OB is reduced, and errors are less likely to occur in the output result of the light receiving sensor 32 that receives the reflected light from the object under measurement OB.

[0058] Furthermore, in the distance measuring device 1, even when a prism 9 satisfying Δd1 = Δd2·n is placed between the semiconductor stacked structure 10 and the object under measurement OB, as described above, there may still be a difference in optical path length and time between the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and the object under measurement OB. Although detailed calculations are omitted, from the viewpoint of further reducing the difference in optical path length and time between the light emitted from one end and the other end of the longitudinal LD ​​in the semiconductor stacked structure 10 and the object under measurement OB, it is more preferable to select a prism 9 that satisfies the following equation (8). Z·cosθ1+Δd2·cosθ4 / sinθ3 =Δd2·n+Δd2·sinθ4 / {sinθ3·tan(θ4+θ5)}…(8) In equation (8), angle θ4 is the angle between the emission surface 92 of the prism 9 and the light refracted by the prism 9 and emitted from the prism 9. Also, in equation (8), angle θ5 is the angle between the light-receiving surface 32a of the light receiver 3 (see Figure 6 for both) and the emission surface 92 of the prism 9.

[0059] In Embodiment 3, a distance measuring device 1 was described as one in which emitted light Lf from a semiconductor multilayer structure 10 is directly irradiated onto an object to be measured OB, and the reflected light specularly reflected by the object to be measured OB is received by a light receiver 3. However, the device is not limited to this. The prism 9 of Embodiment 3 may also be applied to a distance measuring device 1 equipped with a light emitter 2 including a diffuser plate 22. In this case, for example, the prism 9 can be provided between the semiconductor multilayer structure 10 and the diffuser plate 22 of the light emitter 2. Furthermore, in Embodiment 3, a prism 9 with a triangular cross-section was given as an example of an optical path length adjustment unit that reduces the difference in optical path length between the light emitted from one end and the other end of the longitudinal LD ​​of the semiconductor stacked structure 10 and the object OB under measurement. However, a prism 9 of a different shape may be used, or optical components other than the prism 9 may be used, as long as the difference in optical path length can be reduced. In addition, an optical path length adjustment unit may be realized by combining multiple optical components.

[0060] [Embodiment 4] Next, Embodiment 4 of the present invention will be described. Figure 10 is a diagram showing an example of the configuration of a distance measuring device 1 to which Embodiment 4 is applied, and, similar to Figure 1, corresponds to a view of the distance measuring device 1 along the short side direction SD of the semiconductor stacked structure 10 in the light emitter 2. Note that in Figure 10, the wiring and the like formed on the PCB substrate 4 and substrate 21 are omitted. Also, in Figure 10, the object to be measured OB (see Figure 1) is omitted, but the object to be measured OB is positioned above the distance measuring device 1 in the same way as in Figure 1. Furthermore, in Embodiment 4, the same reference numerals are used for components similar to those in Embodiment 1, and a detailed explanation is omitted here.

[0061] In the above-described embodiment 1, the PCB substrate 4 is stacked on the base 5, and an angle adjustment member 6 (see Figure 1) is provided on the PCB substrate 4, so that the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiving sensor 32 of the light receiver 3 form a substrate angle θ2. In contrast, the distance measuring device 1 of the fourth embodiment includes a base 51 as an example of a support member that supports the light emitter 2 such that the substrate 21 of the light emitter 2 and the light receiving surface 32a of the light receiver 3 form a substrate angle θ2, and the light receiver 3 is supported on the base 51 together with the light emitter 2.

[0062] To explain in more detail, as shown in Figure 10, the base 51 has a flat surface 51a parallel to the light-receiving surface 32a of the light-receiving sensor 32, and an inclined surface 51b that protrudes from the flat surface 51a toward the object to be measured OB and forms a predetermined angle (substrate angle θ2) with respect to the flat surface 51a. In the distance measuring device 1 of the fourth embodiment, the light receiver 3 is mounted on the flat surface 51a, and the substrate 21 of the light emitter 2 is mounted on the inclined surface 51b, so that the substrate 21 and the light-receiving surface 32a of the light-receiving sensor 32 of the light receiver 3 form a substrate angle θ2.

[0063] Thus, in the distance measuring device 1 of the fourth embodiment, the light emitter 2 and the light receiver 3 are supported by a common base 51, which reduces the number of alignment adjustments required to adjust the light emitter 2 and the light receiver 3 to a predetermined positional relationship. As a result, the positional accuracy of the light emitter 2 and the light receiver 3 is improved, making it easier for the light receiver 3 to receive the reflected light emitted from the light emitter 2 and reflected off the object OB being measured.

[0064] Furthermore, in the distance measuring device 1 shown in Figure 10, the light emitter 2 is positioned such that the substrate 21 and the semiconductor stacked structure 10 mounted on the substrate 21 move closer to the object under measurement OB as they move away from the light receiver 3. In other words, in the distance measuring device 1 shown in Figure 10, the light receiver 3 is positioned adjacent to the light emitter 2 on the side of the light emitter 2 that is farther from the object under measurement OB (the left side in Figure 10). By adopting this configuration, the obstruction of reflected light from the object under measurement OB by the light emitter 2 and the inclined surface 51b on which the substrate 21 of the light emitter 2 is mounted is suppressed. In addition, the shadow cast on the light receiving surface 32a of the light receiver 3 by the light emitter 2 and the inclined surface 51b on which the substrate 21 of the light emitter 2 is mounted is suppressed.

[0065] Next, a modified example of the distance measuring device 1 of Embodiment 4 will be described. Figure 11 shows a modified example of the distance measuring device 1 to which Embodiment 4 is applied, and, similar to Figure 10, it is a view of the distance measuring device 1 along the short side direction SD of the semiconductor stacked structure 10 in the light emitter 2. In Figure 11, the same reference numerals are used for components similar to those of the distance measuring device 1 shown in Figure 10. In Figure 11, the object to be measured OB (see Figure 1) is not shown, but the object to be measured OB is positioned above the distance measuring device 1 in the figure, similar to Figure 1.

[0066] In the distance measuring device 1 shown in Figure 11, similar to the distance measuring device 1 shown in Figure 10, the base 51 protrudes from the flat surface 51a toward the object to be measured OB and has an inclined surface 51b that forms a predetermined angle (substrate angle θ2) with respect to the flat surface 51a. In the distance measuring device 1 shown in Figure 11, the substrate 21 of the light emitter 2 is loaded onto the inclined surface 51b of the base 5, so that both the light emitter 2 and the light receiver 3 are supported by the base 51. As a result, in the distance measuring device 1 shown in Figure 11, the number of alignment adjustments required to adjust the light emitter 2 and the light receiver 3 to a predetermined positional relationship is reduced. Furthermore, the alignment accuracy between the light emitter 2 and the light receiver 3 is improved, making it easier for the light receiver 3 to receive the reflected light emitted from the light emitter 2 and reflected off the object OB being measured.

[0067] Furthermore, in the distance measuring device 1 shown in Figure 11, the base 51 protrudes from the flat surface 51a toward the object to be measured OB, and the upper surface closest to the object to be measured OB is formed parallel to the flat surface 51a and has a protruding portion 51c. In the distance measuring device 1 shown in Figure 11, the light receiver 3 is mounted on the protruding portion 51c of the base 51. As a result, in the distance measuring device 1 shown in Figure 11, the light receiver 3 is positioned closer to the object under measurement OB compared to the light emitter 2. In this example, the light-receiving surface 32a of the light receiver 3 is positioned closer to the object under measurement OB compared to the semiconductor stacked structure 10 of the light emitter 2. By adopting this configuration, the obstruction of reflected light from the object under measurement OB by the light emitter 2 and the inclined surface 51b on which the substrate 21 of the light emitter 2 is stacked is suppressed. In addition, the shadow cast on the light-receiving surface 32a of the light receiver 3 by the light emitter 2 and the inclined surface 51b on which the substrate 21 of the light emitter 2 is stacked is suppressed.

[0068] [Embodiment 5] Next, other embodiments of the semiconductor stacked structure 10 in the light emitter 2 will be described. Figures 12 and 13 show the configuration of the semiconductor stacked structure 10 to which Embodiment 5 is applied, where Figure 12 is a plan view of the semiconductor stacked structure 10 to which Embodiment 5 is applied, and Figure 13 is a cross-sectional view along the line XIII-XIII shown in Figure 12. The semiconductor stacked structure 10 of Embodiment 5 is a configuration in which a light-emitting element, such as a VCSEL, is integrally formed in the region where the optical coupling portion 11 of the semiconductor stacked structure 10 of Embodiment 1 is located. Here, the same reference numerals are used for components similar to those of the semiconductor stacked structure 10 of Embodiment 1, and detailed explanations are omitted.

[0069] As shown in Figures 12 and 13, the semiconductor multilayer structure 10 is divided into a seed light section 13 and a light amplification section 12. Also, as shown in Figure 13, the semiconductor multilayer structure 10 includes a lower DBR layer 122, an active layer 123, an oxidation constriction layer 124, a p-DBR layer 131, a phase control layer 132, an i-DBR layer 133, an insulating section 134, P electrodes 126-1 and 126-2, and an N electrode 121 laminated on the back surface of the base layer 120.

[0070] The seed light unit 13 is the part that generates seed light Ls, and in this embodiment, it is configured as a VCSEL. As shown in Figure 13, the seed light Ls generated from the seed light unit 13 propagates toward the light amplification unit 12.

[0071] The p-DBR layer 131 and the i-DBR layer 133 are layers corresponding to the upper DBR layer 125 in the semiconductor stacked structure 10 of Embodiment 1. The p-DBR layer 131 is p-type containing p-type impurities, and the i-DBR layer 133 does not contain impurities.

[0072] The phase control layer 132 is formed between the p-DBR layer 131 and the i-DBR layer 133, and is a layer that adjusts the relationship between the wavelength of the seed light Ls and the vertical resonance wavelength in the optical amplification unit 12. In this embodiment, the phase control layer 132 is formed using, for example, a silicon oxide film (SiO2), a silicon nitride film (SiON), or GaAs. In this embodiment, as an example, the wavelength of the seed light Ls is controlled by etching the phase control layer 132 after its formation to reduce its thickness.

[0073] The insulating layer 134 is a layer that electrically insulates the seed light unit 13 and the light amplification unit 12, and in this embodiment, it is formed by ion implantation as an example. P electrode 126-1 is the P electrode of the light amplification unit 12, and P electrode 126-2 is the P electrode of the seed light unit 13.

[0074] The semiconductor stacked structure 10 of this embodiment, having the above configuration, is a form in which the light source for the seed light Ls is integrated within the structure, as in the semiconductor stacked structure 10 of Embodiment 1. The semiconductor stacked structure 10 of this embodiment has the same functions and operations as the semiconductor stacked structure 10 of Embodiment 1. According to the semiconductor stacked structure 10 of this embodiment, a light source other than the semiconductor stacked structure 10 is not required, and the function of the light emission unit that emits light in the light emitter 2 is realized on a single chip. [Explanation of Symbols]

[0075] 1... Distance measuring device, 2... Light emitter, 3... Light receiver, 4... PCB substrate, 5... Base, 6... Angle adjustment member, 6a... Inclined surface, 9... Prism, 10... Semiconductor multilayer structure, 11... Optical coupling section, 12... Optical amplification section, 21... Substrate, 22... Diffuser plate, 31... Light receiving side substrate, 32... Light receiving sensor, 32a... Light receiving surface, 91... Incident surface, 92... Emitting surface

Claims

1. A light emitter comprising a substrate and a light emitting section that emits light in an inclined direction that is inclined with respect to the substrate and the normal of the substrate, The system comprises a light emitter and a light receiver that receives reflected light emitted from the light emitter and reflected by the object to be measured, When the angle between the light emitted from the light emitter and the substrate of the light emitter is angle θ1 (0° < θ1 < 90°), the angle θ2 between the substrate and the light-receiving surface of the light receiver satisfies 0° < θ2 < 180° - 2θ1. The light emitting portion of the light emitter extends in the longitudinal direction along the substrate, is positioned so as it moves closer to the object to be measured from one end to the other in the longitudinal direction, and emits light in the inclined direction that is tilted in the longitudinal direction. The light emitter further comprises a light adjustment unit provided between the light emitting section and the object to be measured, which reduces the difference in optical path length or time difference between the light emitted from the light emitting section and the light emitted from one end and the other end in the longitudinal direction of the light emitting section and the object to be measured, through which the light emitted from the light emitting section passes, If the direction in which the light that has passed through the light adjustment section travels is inclined with respect to the normal of the light receiving surface, the light receiver is provided on the side of the light emitter from which the light that has passed through the light adjustment section travels. Measuring device.

2. The light adjustment unit is a prism with refractive index n, and when light emitted from the light emission unit is incident perpendicularly, and the angle between the incident surface and the emission surface is angle θ3, and the distance between the one end and the other end is distance Z, Z・cosθ1−Z・sinθ1 / tan(θ1+θ2)=Z・sinθ1・tanθ3・n A measuring device according to claim 1 that satisfies the requirements.

3. The measuring device according to claim 1, wherein the light emitter further comprises a diffuser plate provided between the light emitting unit and the object to be measured, which diffuses and transmits the light emitted from the light emitting unit toward the object to be measured.

4. The measuring device according to any one of claims 1 to 3, characterized in that the angle θ1 and the angle θ2 satisfy θ1 + θ2 = 90°.

5. The measuring device according to any one of claims 1 to 4, characterized in that the light emitter is positioned such that it moves closer to the object to be measured as it moves away from the light receiver.

6. The measuring device according to claim 1, characterized in that the light receiver receives reflected light that is emitted from the light emitter and specularly reflected by the object to be measured.

7. The measuring device according to claim 6, characterized in that, when the field of view angle of the light receiver is θr, the angles θ1 and θ2 satisfy 90° - θr < θ1 + θ2 < 90° + θr.

8. When the distance between the light emitter and the object to be measured is L1, and the distance between the light receiver and the object to be measured is L2, The distance X between the light-emitting portion of the light emitter and the light receiver along the light-receiving surface is The measuring device according to claim 7, characterized in that X = (L1 + L2) tan(θ1 + θ2).

9. The measuring device according to claim 1, characterized in that the light receiver is provided in a position closer to the object to be measured compared to the light emitter.

10. The light emitter is further provided with a support member that supports it such that the substrate of the light emitter and the light receiving surface of the light receiver form the angle θ2. The measuring device according to claim 1, characterized in that the light receiver is supported by the support member together with the light emitter.

11. The light emitter further comprises a power supply unit that supplies power to the light emitting section of the light emitter, The measuring device according to claim 1, characterized in that the light emitter is further away from the object to be measured as it approaches the supply unit.

12. The measuring device according to claim 11, characterized in that the light receiver is positioned on the opposite side of the light emitter from the supply unit.

Images