Semiconductor manufacturing equipment and semiconductor manufacturing method

Abstract

To provide a technique capable of improving accuracy in pickup while suppressing an increase in pickup time.SOLUTION: A semiconductor manufacturing device includes: a stage where a die is held; a head provided with a collet having a suction hole for sucking the die; a flow sensor provided in piping communicating with the suction hole; and a control unit acquiring correlation data before production. The control unit lowers the lower end face of the collet from the upper face of the die held on the stage to a predetermined height; detects the flow rate of gas flowing through the suction hole of the collet by the flow sensor, at the predetermined height; and determines a lowering quantity for landing the lower end face of the collet on the upper face of the die held on the stage, based on the correlation data and the flow rate detected at the predetermined height.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and is applicable to, for example, a die bonder that performs a height detection operation of a bond head.

Background Art

[0002] A semiconductor manufacturing apparatus such as a die bonder is an apparatus that bonds (places and adheres) an element, for example, onto a substrate or an element using a bonding material. The bonding material is, for example, a liquid or film-like resin, solder, or the like. The element is, for example, a die such as a semiconductor chip, a MEMS (Micro Electro Mechanical System), and a glass chip. The substrate is, for example, a wiring substrate, a lead frame formed of a metal thin plate, a glass substrate, or the like.

[0003] For example, in a die bonder, a die is picked up from a semiconductor wafer (hereinafter simply referred to as a wafer) using a collet (suction nozzle) provided on a pickup head or a bond head. Then, the die is bonded to the substrate by the bond head. In the die bonder, a continuous operation of repeating this pickup and bond is performed.

[0004] At the time of picking up a die, in order to suppress adverse effects such as not reaching the target position or damaging the die, there is a device that automatically measures the amount of descent of a bond head or the like when picking up the die (Patent Document 1).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] If the bond head is lowered during production based on the amount of descent measured using the technology described in Patent Document 1 before production begins, the amount of descent may become inappropriate if there are changes over time during continuous operation. Furthermore, if the bond head is lowered during production based on the amount of descent measured using the technology described in Patent Document 1, the pickup time increases.

[0007] The objective of this disclosure is to provide a technology that can improve accuracy in pickup while keeping pickup time down. Other challenges and novel features will become apparent from the description herein and the accompanying drawings. [Means for solving the problem]

[0008] A brief overview of some of the representative disclosures is as follows: In other words, the semiconductor manufacturing apparatus comprises a stage on which a die is held, a head provided with a collet having a suction hole for adsorbing the die, a flow sensor provided in a pipe communicating with the suction hole, and a control device that acquires correlation data before production. The control device is configured to lower the lower end surface of the collet to a predetermined height from the upper surface of the die held on the stage, detect the flow rate of the gas flowing through the suction hole of the collet using the flow sensor at the predetermined height, and determine the amount of lowering required to bring the lower end surface of the collet to the upper surface of the die held on the stage based on the correlation data and the flow rate detected at the predetermined height. [Effects of the Invention]

[0009] According to this disclosure, it is possible to improve the accuracy of the pickup while keeping the increase in pickup time to a minimum. [Brief explanation of the drawing]

[0010] [Figure 1] Figure 1 is a schematic top view showing an example of a die bonder configuration. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply unit shown in Figure 1. [Figure 4] Figure 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1. [Figure 5] Figure 5 is a schematic cross-sectional view of the bond head shown in Figure 1. [Figure 6] Figure 6 shows the height of the bond head during the teaching operation before production begins. [Figure 7] Figure 7 is a graph showing an example of the relationship between flow rate and distance obtained during the teaching operation before the start of production. [Figure 8] Figure 8 is a table corresponding to the graph shown in Figure 7. [Figure 9] Figure 9 shows the height of the bond head during the pickup operation for teaching. [Figure 10] Figure 10 shows the height of the bond head during pickup operation without teaching. [Figure 11] Figure 11 shows the height of the bond head during the bonding process. [Figure 12] Figures 12(a) to 12(e) are illustrative diagrams showing a method for measuring collet height using a landing detection sensor. [Figure 13] Figure 13 shows the height of the bond head during the teaching operation when picking up in the comparative example. [Modes for carrying out the invention]

[0011] Embodiments and comparative examples will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for identical components, and repeated explanations may be omitted. In addition, to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings.

[0012] The configuration of a die bonder, which is an embodiment of a semiconductor manufacturing apparatus, will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic top view showing an example of the configuration of a die bonder. FIG. 2 is a diagram for explaining the schematic configuration when viewed from the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing the main part of the wafer supply unit shown in FIG. 1.

[0013] The die bonder 1 is roughly divided into a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transfer unit 50, a substrate supply unit 60, a substrate carry-out unit 70, and a control unit (control device) 80. The Y direction is the front-rear direction of the die bonder 1, the X direction is the left-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is arranged on the front side of the die bonder 1, and the bonding unit 40 is arranged on the rear side. The wafer supply unit 10 supplies the die D to be mounted on the substrate S. Here, on the substrate S, a plurality of product areas (hereinafter referred to as package areas P), which finally become one package, are formed.

[0014] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding stage 12, a peeling unit 13, and a wafer recognition camera 14. The wafer supply unit 10 supplies the die D to be mounted on the substrate S. Here, on the substrate S, a plurality of product areas (hereinafter referred to as package areas P), which finally become one package, are formed.

[0015] The wafer cassette lifter 11 moves up and down a wafer cassette (not shown) in which a plurality of wafer rings WR are stored to the wafer transfer height. Alignment of the wafer ring WR supplied from the wafer cassette lifter 11 is performed by a wafer correction chute (not shown). A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette.

[0016] The wafer holding stage 12 has an expand ring 121 that holds the wafer ring WR, and a support ring 122 that holds the dicing tape DT held by the wafer ring WR and horizontally positions it. The peeling unit 13 is disposed inside the support ring 122.

[0017] The wafer W is adhered (stuck) onto the dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is transparent to visible light. A film-like adhesive material DF called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material DF cures by heating.

[0018] The wafer holding stage 12 is moved in the XY directions by a drive unit not shown, and moves the die D to be picked up to the position of the peeling unit 13. The wafer holding stage 12 rotates the wafer ring WR within the XY plane by a drive unit not shown. The peeling unit 13 is moved in the vertical direction by a drive unit not shown. The peeling unit 13 peels the die D from the dicing tape DT.

[0019] The wafer recognition camera 14 grasps the pick-up position of the die D picked up from the wafer W, and performs a surface inspection of the die D.

[0020] The pick-up unit 20 has a pick-up head 21 and a Y drive unit 23. A collet 22 that sucks and holds the peeled die D at its tip is provided on the pick-up head 21. The pick-up head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pick-up head 21 in the Y-axis direction. The pick-up unit 20 has drive units (not shown) that move the pick-up head 21 up and down, rotate it, and move it in the X direction.

[0021] The intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is equipped with suction holes for attracting the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up.

[0022] The bonding unit 40 includes a bond head 41, a Y drive unit 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that adsorbs and holds the die D at its tip. The Y drive unit 43 moves the bond head 41 in the Y-axis direction. The substrate recognition camera 44 captures a position recognition mark (not shown) of the package area P of the substrate S and recognizes the bond position. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 has a heating unit (not shown) for heating the substrate S. The bonding unit 40 includes various drive units (not shown) that raise, lower, rotate, and move the bond head 41 in the X direction.

[0023] With this configuration, the bond head 41 corrects its pickup position and orientation based on the image data from the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it by stacking it on top of a die that has already been bonded to the package area P of the substrate S.

[0024] The transport unit 50 includes transport claws 51 that grasp and transport the substrate S, and a transport lane 52 on which the substrate S moves. The substrate S moves in the X direction by driving nuts (not shown) of the transport claws 51, which are provided on the transport lane 52, with ball screws (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate discharge unit 70 and hands over the substrate S to the substrate discharge unit 70.

[0025] The substrate supply unit 60 takes the substrates S that have been stored in the transport jig and brought in, and supplies them to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into the transport jig.

[0026] The control unit 80 includes a storage device that stores programs (software) and data for monitoring and controlling the operation of each part of the die bonder 1, a central processing unit (CPU) that executes the programs stored in the storage device, and an input / output device (not shown). The input / output device includes an image acquisition device (not shown), a motor control device (not shown), and an I / O signal control device (not shown), etc. The image acquisition device acquires image data from the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the Y drive unit 43 and Z drive unit 47 of the bonding unit 40, etc. The I / O signal control device acquires various sensor signals such as the landing detection sensor 417 and flow sensor 482 (described later) or controls signal units such as switches for lighting devices, etc.

[0027] A part of the semiconductor device manufacturing process involves mounting dies onto a substrate to assemble a package. Part of the package assembly process includes a dicing process, where dies are separated from a wafer, and a die bonding process, where the separated dies are mounted onto the substrate. The die bonding process using die bonder 1 (semiconductor device manufacturing method) will be explained using Figure 4. Figure 4 is a flowchart illustrating the semiconductor device manufacturing method using the die bonder shown in Figure 1. In the following explanation, the operation of each component of die bonder 1 is controlled by control unit 80.

[0028] (Wafer loading process: Process S1) The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is then supplied to the wafer holder 12. The wafers W are inspected beforehand by an inspection device such as a prober, and wafer map data indicating good or bad quality is generated for each die and stored in the memory device of the control unit 80.

[0029] (Substrate loading process: Process S2) The transport jig containing the substrate S is supplied to the substrate supply unit 60. The substrate supply unit 60 removes the substrate S from the transport jig and fixes the substrate S to the transport claws 51.

[0030] (Pickup process: Process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by the photograph. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder is calculated, and positioning is performed. The die position reference point is a predetermined position on the wafer holder 12, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data.

[0031] The positioned die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled from the dicing tape DT, is attracted and held by the collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0032] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the die D is positioned and its surface inspected based on the image data acquired by the camera. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated, and positioning is performed. The die position reference point is a predetermined position on the intermediate stage 31, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data.

[0033] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0034] (Bond process: Process S4) The transport unit 50 transports the substrate S to the bond stage 46. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired by the image capture. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the bonding unit 40, which is held as the initial setting of the device.

[0035] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet portion 42. The die D is bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and an inspection is performed based on the image data acquired by the photograph to determine whether the die D has been bonded to the desired position.

[0036] The bond head 41, having bonded die D to the substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated until die D is bonded to all package areas P on the substrate S.

[0037] (Substrate unloading process: Process S5) The substrate S to which the die D has been bonded is transported to the substrate discharge section 70. In the substrate discharge section 70, the substrate S is removed from the transport claws 51 and stored in the transport jig. The transport jig containing the substrate S is discharged from the die bonder 1.

[0038] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0039] In the case of laminated bonding, following the wire bonding process, a transport jig containing a substrate S on which dies D are mounted is brought into the die bonder, where dies D are laminated on top of the dies D mounted on the substrate S. After being removed from the die bonder, the dies D are electrically connected to the electrodes of the substrate S via Au wires in the wire bonding process. Dies D from the second stage upwards are peeled off from the dicing tape DT in the manner described above, then transported to the bonding section and laminated on top of the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to the molding process, where the multiple dies D and Au wires are sealed with molding resin (not shown) to complete the laminated package.

[0040] The configuration of the bond head 41 will be explained using Figure 5. Figure 5 is a schematic cross-sectional view of the bond head shown in Figure 1.

[0041] The bond head 41 is connected to the Z drive unit 47, which is mounted on the stage of the Y drive unit 43. The bond head 41 is provided with a collet section 42. The collet section 42 has a collet 421 made of an elastic material such as rubber at its tip and a collet holder 422 to which the collet 421 is attached. The bond head 41 has a movable section 411, a ball bush 412, a contact piece 413, a head support section 414, a compression spring 416, and a landing detection sensor 417. The collet section 42 is connected to the vacuum suction system 48 via the movable section 411.

[0042] A sensor support portion 414a, integrally formed with the head support portion 414, is provided at the upper part of the head support portion 414. The sensor support portion 414a has an opening 414b into which the movable portion 411 is inserted and positioned. A lifting drive unit 474, described later, is connected to the side of the head support portion 414. A ball bush 412 is provided at the lower part of the head support portion 414, whose opening 412a extends almost vertically. The movable portion 411, inserted into the opening 412a of this ball bush 412, is supported so as to be able to move up and down almost vertically.

[0043] A contact piece 413 is mounted horizontally at approximately the midpoint of the movable part 411. A compression spring 416 is provided between the upper surface of the contact piece 413 and the lower surface of the sensor support part 414a, and this compression spring 416 biases the collet part 42 downward via the contact piece 413. Alternatively, a cylinder may be used to bias the collet part 42 downward instead of the compression spring 416.

[0044] The landing detection sensor 417 is a detector that mechanically detects landing during bonding and is mounted by penetrating the sensor support portion 414a. When the lower end surface 421a of the collet 421 is not in contact with another member and is not rising, a predetermined gap (ds) is formed between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact piece 413. The landing detection sensor 417 is a gap sensor that detects the distance of this gap.

[0045] The Z-drive unit 47 includes a stage 471 mounted on the Y-drive unit 43 and a Z-axis 472 that moves up and down relative to the stage 471. The stage 471 is provided with a lifting drive unit (not shown). The lifting drive unit is composed of, for example, a servo motor or stepper motor, a ball screw, a nut, and a cam. The Z-axis 472 moves up and down along the stage 471, which is positioned vertically, by the lifting drive unit.

[0046] The collet 421 is provided with a suction hole on its lower end surface 421a, with one end open. The other end of the suction hole in the collet 421 communicates with the suction hole of the collet holder 422, the suction hole of the movable part 411, and the piping 481 attached to the upper part of the movable part 411.

[0047] Piping 481 is connected to a vacuum supply source (not shown). Piping 481 is equipped with a flow sensor 482 and a valve 483 for detecting the air suction flow rate from the vacuum supply source. Piping 484 is connected to piping 481, and piping 484 is connected to an air supply source (not shown). Piping 484 is equipped with a valve 485. The vacuum source and air supply source may be included in the vacuum suction system 48 of the die bonder 1, or they may be provided outside the die bonder 1. When using a factory vacuum supply source and air supply source, it is preferable to provide a pressure regulator in the vacuum suction system 48.

[0048] When valve 485 is closed and valve 483 is opened, air is drawn in through piping 481, the suction hole of movable part 411, the suction hole of collet holder 422, and the suction hole of collet 421, generating an adhesive force on the lower end surface 421a of collet 421. When valve 483 is closed and valve 485 is opened, air is blown out through piping 481, the suction hole of movable part 411, the suction hole of collet holder 422, and the suction hole of collet 421.

[0049] (Teaching operations before production begins) In the die bonder 1 configured as described above, the following information is acquired through a teaching operation before the actual continuous operation of picking and bonding (before production begins).

[0050] (1) Acquisition of pickup height information (PHD) The control unit 80 acquires pickup height information (PHD) indicating the height of the lower end surface 421a of the collet 421 when picking up during continuous operation in production (pickup height (h5)).

[0051] (2) Acquisition of correlation data (CD) The control unit 80 acquires correlation data (CD) between the flow rate drawn in by the lower end surface 421a of the collet 421 and the distance between the lower end surface 421a of the collet 421 and the upper surface of the die D placed on the intermediate stage 31.

[0052] (3) Acquisition of flow measurement height information (FHD) The control unit 80 acquires flow measurement height information (FHD) which indicates the height (flow measurement height (h4)) of the lower end surface 421a of the collet 421 that performs the teaching operation when actually picking up the die D.

[0053] (4) Bond Height Information (BHD) Bond height information (BHD) is obtained, which indicates the height (bond height (h6)) of the lower end surface 421a of the collet 421 when bonding.

[0054] When performing the actual pickup operation, the control unit 80 periodically performs a teaching operation using the correlation data (CD) and flow measurement height information (FHD) acquired during the teaching operation before the start of production. This teaching operation acquires the descent amount correction information (DCD) of the bond head 41. In the pickup operation, following the teaching operation, the control unit 80 controls the drive of the bond head 41 using the acquired descent amount correction information (DCD). When performing the bonding operation, the control unit 80 controls the drive of the bond head 41 using the descent amount correction information (DCD) and bond height information (BHD).

[0055] The teaching operation in die bonder 1 before the start of production will be explained with reference to Figures 6 to 8. Figure 6 shows the height of the bond head during the teaching operation before the start of production. Figure 7 is a graph showing an example of the relationship between flow rate and distance obtained during the teaching operation before the start of production. Figure 7 is a table corresponding to the graph shown in Figure 6.

[0056] (Step S11) The control unit 80 moves the bond head 41 above the die D, which is placed on the intermediate stage 31, at the high-speed descent start height (h1), so that the lower end surface 421a of the collet 421 faces the upper surface of the die D. The die D is pre-placed on the intermediate stage 31 by the pickup head 21. The high-speed descent start height (h1) is the height of the lower end surface 421a of the collet 421 when the bond head 41 moves horizontally between the intermediate stage 31 and the bond stage 46, and is set lower than the height of the lower end surface 421a of the collet 421 when the Z-axis 472 is at the machine origin in the Z direction (origin height (h0)).

[0057] (Step S12) The control unit 80 lowers the bond head 41 at high speed to the low-speed descent start height (h2). The low-speed descent start height (h2) is the height of the lower end surface 421a of the collet 421 when the low-speed descent of the bond head 41 begins.

[0058] (Step S13) The control unit 80 stops the descent of the bond head 41 and activates the low-speed start timer (step S131).

[0059] After the low-speed start timer has elapsed for a predetermined time, the control unit 80 opens valve 485 to start blowing air (step S132). At this time, valve 483 is closed. If the low-speed start timer is set to 0, step S132 is performed without any waiting time.

[0060] (Step S14) After a predetermined time has elapsed, the control unit 80 closes valve 485 and opens valve 483 to start drawing in air (step S141).

[0061] The control unit 80 lowers the bond head 41 by a predetermined amount (Δz1) (step S142) and measures the flow rate (FR) drawn in by the collet 421 using the flow sensor 482 (step S143). The predetermined amount (Δz1) is, for example, several times the control resolution of the lifting drive unit 474.

[0062] The control unit 80 checks the flow rate (FR) detected by the flow sensor 482 and confirms whether the flow rate (FR) is below a predetermined threshold (FRt) (step S144). The threshold (FRt) is a value that is set in advance as the value at which the lower end surface 421a of the collet 421 can be considered to be in contact with the die D.

[0063] The control unit 80 repeats the process in steps S142 to S144 until the flow rate (FR) falls below the threshold (FRt).

[0064] After the flow rate measurement is complete, the control unit 80 closes the valve 483 to stop suction (step S145).

[0065] The control unit 80 stores in its memory the amount of offset from the machine origin in the Z-direction of the Z-axis 472 at the height of the lower end surface 421a of the collet 421 (pickup height (h5)) where the flow rate (FR) is less than or equal to the threshold (FRt) as pickup height information (PHD) (step S146).

[0066] (Step S15) The control unit 80 raises the bond head 41 to a measurement start height (h3), which is a predetermined distance higher than the pickup height (h5). The measurement start height (h3) is the height of the lower end surface 421a of the collet 421 when measurement of correlation data begins. The measurement start height (h3) is lower than the low-speed descent start height (h2).

[0067] (Step S16) The control unit 80 closes valve 485 and opens valve 483 to start drawing in air (step S161).

[0068] The control unit 80 measures the flow rate (FR) drawn in by the collet 421 using the flow sensor 482 (step S162).

[0069] The control unit 80 stores the measured flow rate (FR) and the height (hc) of the lower end surface 421a of the collet 421 at the time the flow rate was measured in the control unit 80's memory (step S163).

[0070] The control unit 80 lowers the bond head 41 by a predetermined amount (Δz2) (step S164) and measures the flow rate (FR) drawn in by the collet 421 using the flow sensor 482 (step S165). The predetermined amount (Δz2) is a value smaller than Δz1, and is, for example, the amount of the control resolution of the lifting drive unit 474.

[0071] The control unit 80 stores the measured flow rate (FR) and the height (hc) of the lower end surface 421a of the collet 421 at the time the flow rate was measured in the control unit 80's memory (step S166). The control unit 80 repeats the process in steps S164 to S166 until the height of the lower end surface 421a of the collet 421 reaches the pickup height (h5).

[0072] The control unit 80 creates correlation data between flow rate (FR) and distance (d), as shown in Figures 7 and 8, based on the flow rate (FR) and the height (hc) of the lower end surface 421a of the collet 421, which are stored in memory, and stores this data in the memory of the control unit 80 (step S167). The distance (d) is the difference between the height (hc) of the lower end surface 421a of the collet 421 and the height of the upper surface of the die D (pickup height (h5)).

[0073] The control unit 80 sets a flow rate measurement height (h4 = h5 + dp) that is a predetermined distance (dp) higher than the height of the top surface of the die D (pickup height (h5)), and stores the offset amount from the machine origin in the Z direction of the Z axis 472 as flow rate measurement height information (FHD) in the memory of the control unit 80 (step S168). As shown in Figure 7, for example, dp = 15 μm. The flow rate (FRp) at this time is -0.14 L / min.

[0074] The amount of offset of the Z-axis 472 from the machine origin in the Z-direction at the pickup height (h5), plus or minus the difference in distance in the Z-direction between the surface of the die D placed on the intermediate stage 31 and the surface of the substrate S placed on the bond stage 46, is stored in the memory of the control unit 80 as bond height information (BHD) (step S169).

[0075] (Pickup operation: Teaching operation included) The pickup operation of die D, which performs teaching operations during production, will be explained using Figure 9. Figure 9 shows the height of the bond head during the pickup operation for teaching.

[0076] Steps S11 to S13 in the pickup operation are the same as the teaching operation before production begins. The differences from the teaching operation before production begins will be explained below. Note that the teaching operation shown in Figure 9 may be performed at times other than during production, i.e., before production begins or after production ends.

[0077] (Step S24) After a predetermined time has elapsed, the control unit 80 closes valve 485 and opens valve 483 to start drawing in air. The control unit 80 then lowers the bond head 41 at a slow speed to the flow measurement height (h4) indicated by the flow measurement height information (FHD).

[0078] (Step S25) The control unit 80 stops the descent of the bond head 41 and measures the flow rate drawn by the collet 421 using the flow sensor 482.

[0079] (Step S26) The control unit 80 compares the flow rate (FRp) corresponding to the flow rate measurement height information (FHD) with the flow rate (FRm) measured in step S25, based on the correlation data (CD) stored in memory. If the two match, the control unit 80 lowers the bond head 41 by the flow rate measurement height (h4) indicated by the flow rate measurement height information (FHD).

[0080] If the flow rate (FRp) and flow rate (FRm) do not match, the height (h) of the lower end surface 421a of the collet 421 is fluctuating (h = h⁴ + α (where α is a positive or negative number)). The control unit 80 calculates the distance (dm) corresponding to the measured flow rate (FRm) from the correlation data (CD) and lowers the bond head 41 by the distance (dm). dm is the amount of lowering corrected for dp, and dm = dp - α, where α is the correction amount.

[0081] (Step S27) The control unit 80 picks up the die D using the bond head 41.

[0082] (Pickup operation: No teaching operation) The teaching process described above during the pickup operation is not performed every time, but periodically after a predetermined period has elapsed. The pickup operation of die D without teaching is explained using Figure 10. Figure 10 shows the height of the bond head during the pickup operation without teaching.

[0083] Steps S11 to S13 in the pickup operation without teaching are the same as in the pickup operation with teaching shown in Figure 9. The differences from the pickup operation with teaching will be explained below.

[0084] (Step S34) After a predetermined time has elapsed, the control unit 80 closes valve 485 and opens valve 483 to start drawing in air. The control unit 80 lowers the bond head 41 at a slow speed (for example, 10 μm / min) to the position indicated by the pickup height information (PHD) (pickup height (h5)).

[0085] (Bonding action) The bonding operation of die D will be explained using Figure 11. Figure 11 shows the height of the bond head during the bonding operation.

[0086] Steps S41-S43 in the bonding operation are the same as steps S11-S131 in the teaching operation before the start of production.

[0087] (Step S44) Based on the bond height information (BHD) stored in memory and the amount of descent (dp or dm) obtained in step S27 of the pickup operation, the control unit 80 lowers the bond head 41 at a low speed (e.g., 5 μm / min) to a position that is the bond height (h7), and lands the die D on the substrate S.

[0088] (Step S45) The control unit 80 lowers the bond head 41 by a predetermined amount even after the die D has come into contact with the substrate S. At this time, the collet portion 42 retracts by the predetermined amount lowered after the die D has come into contact with the substrate S, but since a pressing force is applied by the compression spring 416, a pressing load is applied to the die D which is held in place by the collet portion 42. By maintaining this state for a preset bonding time, the die D is bonded to the substrate S.

[0089] In the bond head 41, when the bond head 41 is lowered and the landing detection sensor 417 detects that a predetermined gap (predetermined interval) has formed between the lower end surface 417a and the upper surface of the contact piece 413, it is determined that the die D and the substrate S have come into contact. The landing detection sensor 417 usually uses a displacement sensor or the like, and in order to ensure stable detection, the predetermined interval is set so that detection occurs with a sensitivity difference of several tens of micrometers from the original landing position of the reference collet (in a pressed state).

[0090] Furthermore, it is possible to measure the collet height using the landing detection sensor 417. The method for measuring the collet height using the landing detection sensor 417 will be explained using Figures 12(a) to 12(e). Figures 12(a) to 12(e) are illustrative diagrams showing the method for measuring the collet height using the landing detection sensor.

[0091] Figure 12(a) shows the landing position of the reference collet. The control unit 80 stores the landing position (ho) of the reference collet on the linear scale of the device as the origin through pre-teaching.

[0092] Figures 12(b) and 12(d) show the case where the height of the reference collet and the collet to be measured are the same. As shown in Figure 12(b), the control unit 80 lowers the bond head 41 at a predetermined pitch (p) from a preset position (hs) above the landing point while checking the landing detection sensor 417. Here, hs is the indicated value of the linear scale, for example, hs = 100 μm. Also, for example, p = 5 μm.

[0093] As shown in Figure 12(d), the landing detection sensor 417 is configured to detect landing by taking the sensitivity difference of ha from the original landing position of the reference collet (when pressed down), with a predetermined interval (do) set. That is, do = ds - (ho - ha). Here, ds is the gap between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact piece 413 when it is not landing. For example, ha is set to several tens of micrometers.

[0094] The control unit 80 reads the indicated value on the linear scale when the landing detection sensor 417 detects landing (do = ds - (ho - ha)) and measures the collet height. If the height of the collet 421 has not changed since the pre-teaching, the value on the linear scale will be the same as ha, which is set as the sensitivity difference.

[0095] Figures 12(c) and 12(e) show the case where the height of the reference collet and the collet under measurement are different. When the height of the collet 421 has changed since pre-teaching, as shown in Figure 12(e), when the bond head 41 is lowered so that the gap between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact piece 413 becomes a predetermined interval (do), for example, when the value of the linear scale becomes hb, it can be seen that the height of the collet 421 has increased by (Δh = hb - ha), as shown in Figure 12(c).

[0096] The landing detection sensor 417 can detect the height while holding die D. In step S26, the collet height is determined based on the corrected descent amount. If there is a discrepancy between the collet height measured using the flow sensor and the collet height measured using the landing detection sensor, a predetermined interval (do) may be used for calibration. This calibration may be performed periodically.

[0097] To further clarify this embodiment, a comparative example will be described using Figure 13. Figure 13 shows the height of the bond head during the teaching operation when picking up in the comparative example.

[0098] Steps S11 to S13 in the comparative example are the same as the teaching operations before production commencement. The differences from the teaching operations before production commencement will be explained below.

[0099] (Step S54) After a predetermined time has elapsed, the control unit 80 closes valve 485 and opens valve 483 to start drawing in air (step S541).

[0100] The control unit 80 lowers the bond head 41 by a predetermined amount (Δz1) (step S542) and measures the flow rate (FR) drawn by the collet 421 using the flow sensor 482 (step S543). The predetermined amount (Δz1) is, for example, 10 μm.

[0101] The control unit 80 checks the flow rate (FR) detected by the flow sensor 482 and confirms whether the flow rate (FR) is below a predetermined threshold (FRt) (step S544). The threshold (FRt) is a value that is set in advance as the value at which the lower end surface 421a of the collet 421 can be considered to be in contact with the die D.

[0102] The control unit 80 repeats the process in steps S542 to S544 until the flow rate (FR) falls below the threshold (FRt).

[0103] After the flow rate measurement is complete, the control unit 80 closes the valve 483 to stop suction (step S545).

[0104] The control unit 80 stores in its memory the amount of offset from the machine origin in the Z-direction of the Z-axis 472 at the height of the lower end surface 421a of the collet 421 (pickup height (h5)) where the flow rate (FR) is less than or equal to the threshold (FRt) as pickup height information (PHD) (step S546).

[0105] (Step S55) The control unit 80 raises the bond head 41 to a height (h3') that is a predetermined distance higher than the pickup height (h5). The height (h3') is the height of the lower end surface 421a of the collet 421 when fine searching is started. The height (h3') is lower than the low-speed descent start height (h2).

[0106] (Step S56) The control unit 80 closes valve 485 and opens valve 483 to start drawing in air (step S561).

[0107] The control unit 80 lowers the bond head 41 by a predetermined amount (Δz1) (step S562) and measures the flow rate (FR) drawn by the collet 421 using the flow sensor 482 (step S563). The predetermined amount (Δz1) is, for example, 2 μm.

[0108] The control unit 80 checks the flow rate (FR) detected by the flow sensor 482 and confirms whether the flow rate (FR) is below a predetermined threshold (FRt) (step S564). The threshold (FRt) is a value that is set in advance as the value at which the lower end surface 421a of the collet 421 can be considered to be in contact with the die D.

[0109] The control unit 80 repeats the process in steps S562 to S564 until the flow rate (FR) falls below the threshold (FRt).

[0110] The control unit 80 stores in its memory the amount of offset from the machine origin in the Z direction of the Z axis 472 at the height of the lower end surface 421a of the collet 421 (pickup height (h5)) where the flow rate (FR) is less than or equal to the threshold (FRt) as pickup height information (PHD) (step S565).

[0111] (Step S57) The control unit 80 picks up the die D using the bond head 41.

[0112] In the comparative example, the descent of the bond head 41 and the flow rate measurement are performed twice, divided into a coarse search (step S54) and a fine search (step S56). In contrast, in the embodiment, after descending to a certain height (step S24), the flow rate measurement is performed only once (step S24). After that, it descends by the correction value obtained from the correlation data (step S26). Since the embodiment has a significantly smaller number of flow rate measurements compared to the comparative example, the descent time of the bond head 41 is shortened, and the pickup time is shortened.

[0113] According to the embodiment, one or more of the following effects can be obtained.

[0114] (a) It is possible to shorten the height teaching time using the flow sensor during continuous operation (production).

[0115] (b) By saving correlation data for each collet type (size, hole diameter, etc.) corresponding to the product variety, it becomes unnecessary to create correlation data through height teaching operations before production starts each time a collet is replaced. Even if there is variation in height during collet manufacturing, the height can be corrected by teaching during pickup.

[0116] (c) By performing teaching during each pickup, highly accurate landing detection based on flow rate can be achieved in a relatively short time. This eliminates the need for a low-impact mode, which reduces the impact of landing by slowing down the bond head's descent speed before landing (to about 1 / 10th the speed of the low-speed descent mentioned above). Therefore, processing time can also be reduced.

[0117] (d) By confirming the detection position of the landing detection sensor mounted on the bond head, it becomes possible to calibrate the landing detection sensor using the height detection data based on the flow rate detected during pickup.

[0118] (e) As described in (d) above, it becomes possible to periodically calibrate the landing detection sensor. This makes it possible to periodically calibrate the sensitivity deviation of the landing detection sensor without affecting throughput, and to achieve stable bonding over time.

[0119] (f) The height detection data obtained from the flow rate detected during pickup allows for feedback to the landing position during bonding. This enables stable height accuracy during bonding and reduces impact load. The distance between the lower end surface of the collet and each stage may vary depending on the collet's mounting condition or changes over time. However, the positions of the pickup stage (wafer holder, intermediate stage) and the bonding stage surface are known. Since the distance between the lower end surface of the collet and the surface of the pickup stage can be accurately determined, the positions of the lower end surface of the collet and the surface of the bonding stage can also be accurately determined. In other words, the collet height can be precisely controlled, making it possible to prevent impact during bonding.

[0120] The disclosures made by the Disclosers have been described in detail based on embodiments, but it goes without saying that the disclosures are not limited to the embodiments described above and can be modified in various ways.

[0121] For example, in the embodiment, an example was described in which the pickup height, etc., is taught based on the suction flow rate from the collet, but the pickup height, etc., may also be taught based on the air flow rate ejected by the collet.

[0122] In this embodiment, an example of teaching using a flow sensor during pickup was described, but a flow sensor and a landing detection sensor may be used in combination.

[0123] Furthermore, in the embodiment, an example of a bond head that picks up a die from an intermediate stage and bonds it to a substrate held on a bond stage was described. However, it is not limited to this, and can also be applied to a pickup head that picks up a die from a wafer holder and places it on an intermediate stage. In this case, the wafer holder is the first stage, and the intermediate stage is the second stage.

[0124] In this embodiment, an example was described in which a die picked up from a wafer by a pickup head is placed on an intermediate stage, and the die is picked up from the intermediate stage by a bond head. However, the invention is not limited to this, and can also be applied to direct bonding in which a die picked up from a wafer by a bond head is bonded to a substrate, without a pickup head or intermediate stage. In this case, the wafer holder is the first stage, and the bond stage is the second stage.

[0125] Furthermore, although a DAF is attached to the back surface of the wafer in this embodiment, the DAF is not required.

[0126] Furthermore, although the embodiment includes one pickup head and one bond head, there may be two or more of each.

[0127] In this embodiment, a die bonder was used as an example, but the method can also be applied to flip-chip bonders and chip mounters. [Explanation of Symbols]

[0128] 1. Die bonder (semiconductor manufacturing equipment) 31...Intermediate Stage (Stage) 41... Bond Head (Head) 421...Colette 421a...Bottom end surface 481... Piping 482... Flow sensor 80. Control Unit (Control Device) D...Dai

Claims

1. The stage where the die is held, A head is provided with a collet having a suction hole for adsorbing the die, A flow sensor is provided in the piping that communicates with the aforementioned suction hole, A control device configured to acquire correlation data between the distance between the lower end surface of the collet and the upper surface of the die held on the stage, and the flow rate of the gas flowing through the suction hole of the collet as detected by the flow sensor, before production. Equipped with, The control device is The lower end surface of the collet is lowered from the upper surface of the die held on the stage to a first predetermined height. At the first predetermined height, the flow rate of the gas flowing through the suction hole of the collet is detected by the flow sensor. A semiconductor manufacturing apparatus configured to perform a teaching operation to determine the amount of descent required to bring the lower end surface of the collet to the upper surface of the die held on the stage, based on the correlation data and the flow rate detected at the first predetermined height.

2. In the semiconductor manufacturing apparatus according to claim 1, The control device is configured to perform the teaching operation during production in a semiconductor manufacturing apparatus.

3. In the semiconductor manufacturing apparatus according to claim 1, The control device, before production, The lower end surface of the collet is set to a second predetermined height that is higher than the first predetermined height from the upper surface of the die held by the stage, A semiconductor manufacturing apparatus configured to perform a teaching operation to acquire correlation data by lowering the lower end surface of the collet from a second predetermined height to the height of the upper surface of the die held on the stage, and then raising it again to the first predetermined height.

4. In the semiconductor manufacturing apparatus according to claim 1, The control device is configured to perform the teaching operation for each predetermined number of pickup operations in a semiconductor manufacturing apparatus.

5. In the semiconductor manufacturing apparatus according to claim 1, Furthermore, the semiconductor manufacturing apparatus comprises a second stage on which the die, or a substrate on which the die is mounted, is mounted.

6. In the semiconductor manufacturing apparatus of claim 5, The control device is configured to determine the amount of descent required to bring the lower end surface of the collet to the substrate, the die placed on the substrate, or the upper surface of the second stage, based on the correlation data and the flow rate detected at the first predetermined height.

7. In the semiconductor manufacturing apparatus of claim 5, The aforementioned stage is a wafer holding section, The second stage mentioned above is the Bond Stage, The aforementioned head is a bond head in a semiconductor manufacturing apparatus.

8. In the semiconductor manufacturing apparatus according to claim 1, The head is equipped with a landing detection sensor. The control device is configured to confirm the detection position of the landing detection sensor based on the correlation data and the flow rate detected at the first predetermined height in the semiconductor manufacturing apparatus.

9. In the semiconductor manufacturing apparatus according to claim 1, The head is equipped with a landing detection sensor. The control device is further configured to measure the height of the collet using the landing detection sensor during the teaching operation.

10. In the semiconductor manufacturing apparatus according to claim 1, The control device is configured to detect the flow rate of gas blown out from the suction hole of the collet using the flow sensor.

11. A semiconductor manufacturing apparatus comprising: a stage on which a die is held; a head provided with a collet having a suction hole for adsorbing the die; a flow sensor provided in a pipe communicating with the suction hole; and a control device configured to acquire correlation data between the distance between the lower end surface of the collet and the upper surface of the die held on the stage, and the flow rate of gas flowing through the suction hole of the collet as detected by the flow sensor, for loading a wafer into the apparatus; The steps include: lowering the lower end surface of the collet from the upper surface of the die held on the stage to a first predetermined height; detecting the flow rate of the gas flowing through the suction hole of the collet using the flow sensor at the first predetermined height; and determining the amount of descent required to bring the lower end surface of the collet to the upper surface of the die held on the stage based on the correlation data and the flow rate detected at the first predetermined height; A method for manufacturing a semiconductor device containing [a specific component].

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