Film forming device

Abstract

To provide a film deposition apparatus capable of preventing a detection window of a monitoring part from getting dirty.SOLUTION: A film deposition apparatus 100 includes a monitoring part 60 for monitoring a film thickness on a workpiece 10. The monitoring part 60 including a detection window 65 through which light for detecting the film thickness penetrates and a tabular part 68 casts the light on the workpiece 10 through the detection window 65 to detect the film thickness on the basis of the light radiated on the workpiece 10 and the film; and the tabular part 68 extends along the extent of a rotary table 31 while facing an installation surface 311 where the workpiece 10 of the rotary table 31 is installed.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a film forming apparatus.

Background Art

[0002] In the manufacturing processes of various products such as semiconductors, displays, and optical disks, for example, a film forming process may be performed on a workpiece such as a wafer or a glass substrate. For components such as smartphones, TVs, HUDs (Head Up Displays), or projectors, an AR coat (Anti-Reflection coating) for suppressing surface reflection is formed. A band pass filter that is used in spectroscopic analysis, optical communication, etc. and transmits only arbitrary light, for lasers, UV lamps, in-vehicle sensors, etc., a cold mirror used for a reflector, etc. is formed by a film forming process.

[0003] There are various film forming apparatuses for film forming processes. As one type, there is a film forming apparatus that uses plasma. The film forming apparatus using plasma arranges a target made of a film material source in a film forming chamber, introduces an inert gas into the film forming chamber, and applies a DC voltage. When ions of the plasmaized inert gas collide with the target, the material constituting the target is knocked out as atomic, molecular, or cluster-shaped particles (hereinafter also referred to as sputter particles). The sputter particles accumulate on the workpiece facing the target in the film forming chamber. There is also a film forming apparatus that has a film treatment chamber in addition to the film forming chamber and causes a chemical reaction such as oxidation or nitridation of the film formed in the film forming chamber.

[0004] A certain film thickness is required for a film on a workpiece to adequately perform its desired function. One known method for achieving the target film thickness is to repeatedly form a thin film on the workpiece until the overall target thickness is reached. A film deposition apparatus for stacking thin films has a rotating table that can circulate through the deposition chamber. The workpiece is placed on the rotating table, and as the rotating table rotates, the workpiece passes through the deposition chamber multiple times, with the film being stacked each time it passes through. If there is also a film processing chamber, the workpiece passes through the deposition chamber and the film processing chamber multiple times, repeating the film deposition and film processing each time it passes through.

[0005] Conventionally, the film deposition time required to reach the target film thickness was determined in advance through simulation, calculation, or actual measurement, and film deposition was stopped when this time was reached. However, there is a risk that a difference may occur between the target film thickness and the actual film thickness. Therefore, a method has been proposed in which film deposition is performed while detecting the actual film thickness (see, for example, Patent Documents 1 and 2). The proposed film deposition apparatus is equipped with a monitoring unit that monitors the film thickness. The monitoring unit has a detection window positioned facing the workpiece and irradiates the workpiece and film with light through the detection window. The monitoring unit then detects the transmitted light from the workpiece and film and measures the film thickness based on the spectral transmittance. Alternatively, the monitoring unit receives reflected light from the workpiece and film through the detection window and measures the film thickness by analyzing the reflected light. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Patent No. 3744003 [Patent Document 2] Japanese Patent Application Publication No. 04-92444 [Overview of the project] [Problems that the invention aims to solve]

[0007] Generally, the deposition chamber is enclosed by partition walls. Therefore, sputtered particles ejected from the target are less likely to escape from the deposition chamber. On the other hand, a gap is left between the workpiece mounting surface of the rotary table and the end of the partition wall so that the workpiece can pass through the deposition chamber on the rotary table. As a result, it is not possible to completely prevent sputtered particles from leaking out of the deposition chamber, and there is a risk that sputtered particles may reach the detection window of the monitoring unit installed outside the deposition chamber and adhere to the detection window of the monitoring unit.

[0008] If the detection window becomes contaminated with sputtered particles, it will be impossible to emit the intended amount of light towards the workpiece, and it will also be impossible to obtain sufficient transmitted or reflected light from the workpiece. Moreover, the monitoring unit will analyze the light containing information about the contaminants on the detection window. As a result, errors may occur in the measurement results of the film thickness, or in the worst case, it may become impossible to detect the film thickness, potentially hindering film thickness detection.

[0009] To avoid interfering with film thickness detection, the detection window needs to be cleaned regularly. However, if the cleaning frequency increases, the film deposition equipment must be stopped frequently, which reduces the production efficiency of the film deposition equipment.

[0010] This invention was made to solve the above-mentioned problems, and its purpose is to provide a film deposition apparatus that suppresses contamination of the detection window and improves detection accuracy and productivity. The present invention aims to provide **. [Means for solving the problem]

[0011] The film deposition apparatus of the present invention has a rotating table on which a workpiece is placed on a mounting surface and rotates, a transport unit that circulates and transports the workpiece along a circumferential transport path by rotating the rotating table, and a unit facing the transport path, The aforementioned transport path is partitioned and provided as a divider,The system comprises a film deposition chamber for forming a film on the workpiece, a target which is the material source for the film, and a plasma generator which converts sputtering gas introduced between the target and the rotary table into plasma, and a film deposition unit which sputters the target with plasma to form a film on the workpiece, and a monitoring unit which monitors the thickness of the film on the workpiece, the monitoring unit and the transport path Above The aforementioned film deposition chamber The section Outside So that opposite to the aforementioned transport path The apparatus comprises a detection window through which light for detecting film thickness is transmitted, a light-emitting unit that irradiates light onto a workpiece on which the film is formed via the detection window, and an analysis unit that detects the thickness of the film based on reflected light from the workpiece or light transmitted through the workpiece, wherein the detection window faces the mounting surface of the rotary table and has an end face from which light from the light-emitting unit is emitted toward the workpiece, and the end face is inclined with respect to the central axis of the detection window and faces in the direction opposite to the direction in which the film deposition chamber exists. [Effects of the Invention]

[0012] According to an embodiment of the present invention, a film deposition apparatus is provided that can suppress contamination of the detection window and improve detection accuracy and productivity. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic perspective plan view showing the configuration of the film deposition apparatus according to the embodiment. [Figure 2] This is a flowchart showing the operation of the film deposition apparatus. [Figure 3] Figure 1 is a cross-sectional view AA, showing the interior of the film deposition chamber and the film processing chamber. [Figure 4] This is a block diagram showing the configuration of the monitoring unit in a film deposition apparatus. [Figure 5] Figure 1 is a cross-sectional view of BB, showing the installation configuration of the monitoring unit. [Figure 6] This is a magnified view of the surveillance area. [Figure 7]It is a schematic diagram showing flying particles attempting to pass between the plate-like part and the rotary table. [Figure 8] It is an enlarged view near the detection window. [Figure 9] It is a schematic diagram showing flying particles that have reached near the detection window.

Embodiments for Carrying out the Invention

[0014] Embodiments of a film-forming apparatus according to the present invention will be described in detail while referring to the drawings.

[0015] (Overall apparatus) FIG. 1 is a perspective plan view schematically showing the configuration of a film-forming apparatus 100 of the present embodiment. The film-forming apparatus 100 is an apparatus for forming a film on a workpiece 10. The workpiece 10 is, for example, but not limited to, a glass substrate or a resin substrate. The film formed by the film-forming apparatus 100 on the workpiece 10 is a compound film such as an oxide film or a nitride film. This film-forming apparatus 100 includes a chamber 20, a transfer unit 30, a film-forming chamber 4, a film treatment chamber 5, a monitoring section 6, a load lock section 70, and a control device 80.

[0016] The chamber 20 is a cylindrical container capable of evacuating the interior. The transfer unit 30 has a rotary table 31 concentric with the chamber 20 inside the chamber 20. The workpiece 10 carried in from the load lock section 70 is placed on the rotary table 31. The rotary table 31 circulates and conveys the workpiece 10. The workpiece 10 moves along a conveyance path L, which is a circumferential locus, by the rotary table 31.

[0017] The chamber 20 is divided into multiple sections. Each section of the chamber 20 is assigned a film deposition chamber 4, a film processing chamber 5, and a monitoring section 6 in that order, along the circumferential direction of the chamber 20, and faces the transport path L of the workpiece 10. Multiple film deposition chambers 4 may be arranged in a continuous sequence. The film deposition chambers 4 are sections separated by partition walls 22, and the film processing chambers 5 are sections separated by cylindrical bodies 51. The monitoring section 6 is a section separated by the partition wall 22 located furthest upstream in the transport direction and the side wall of the cylindrical body 51 located downstream in the transport direction. In other words, the monitoring section 6 is a section between the film deposition chamber 4 located upstream in the transport direction and the film processing chamber 5, and is located downstream of the film processing chamber 5 in the transport direction. The workpiece 10 repeatedly circulates through the film deposition chamber 4, film processing chamber 5, and monitoring section 6 by the transport unit 30.

[0018] The deposition chamber 4 is a compartment where the deposition unit 40 is located, and a film is formed on the workpiece 10. The deposition unit 40 uses plasma to knock out sputtered particles from a target 42 composed of the film material source and deposits them on the workpiece 10 to form a film. The film processing chamber 5 is a compartment where the film processing unit 50 is located, and processes the film formed on the workpiece 10 that has passed through the deposition chamber 4 by the transport unit 30. The film processing unit 50 generates plasma in a process gas and generates a compound film by chemically reacting ions in the plasma with the film.

[0019] The deposition chambers 4 are arranged, for example, in a sequence of two chambers in the transport direction. The materials of the targets 42 placed in the two deposition chambers 4 may be different. This allows two different types of films to be deposited on the workpiece 10. The deposition chambers 4 may consist of only one chamber, or three or more chambers may be arranged in a sequence. In addition, multiple deposition chambers 4 can each contain targets 42 made of different materials, or they can each contain targets 42 made of the same type of material.

[0020] In the monitoring section 6, the thickness of the compound film formed on the workpiece 10 is measured optically. Various known film thickness detection methods can be applied as long as they are optical measurement methods. For example, the film thickness is detected by shining light on the workpiece 10 and detecting the reflected light from the workpiece 10 based on the peak-valley method (PV method). A detection window 65 is installed in the monitoring section 6, facing the rotary table 31 (see Figure 3). The detection window 65 is a light-transmitting material such as quartz or sapphire. Light is shone through this detection window 65 onto the workpiece 10 as it passes directly below the detection window 65, and the reflected light from the workpiece 10 is obtained through this detection window 65. In other words, this detection window 65 separates the space where the workpiece 10 is located from the space where various optical components are arranged, while ensuring the passage of light between the two spaces.

[0021] The control device 80 is a processing unit that includes a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program that describes the control content. This control device 80 controls each component of the film deposition apparatus 100 and operates the film deposition unit 40, the film processing unit 50, and the rotary table 31 until the film thickness on the workpiece 10 detected in the monitoring area 6 reaches the target film thickness.

[0022] Figure 2 is a flowchart showing the overall operation of the film deposition apparatus 100 controlled by the control device 80. The workpiece 10 is loaded into the chamber 20 from the load lock section 70 (step S01). The pressure inside the chamber 20 is reduced to a predetermined pressure (step S02). After the pressure inside the chamber 20 is reduced, the control device 80 rotates the rotary table 31 on which the workpiece 10 is placed (step S03).

[0023] If the film deposition apparatus 100 has two film deposition chambers 4, the control device 80 operates the film deposition unit 40 of one film deposition chamber 4 and stops the film deposition unit 40 of the other film deposition chamber 4 (step S04). In the operating film deposition chamber 4, a film is formed on the workpiece 10 (step S05). For example, a silicon (Si) target 42 is installed in one of the film deposition chambers 4 to deposit a silicon film on the workpiece 10. Each time the workpiece 10 passes through the operating film deposition chamber 4, the film on the surface of the workpiece 10 becomes thicker. The workpiece 10 that has been deposited in the operating film deposition chamber 4 moves towards the film processing chamber 5 each time it passes through the film deposition chamber 4, and the film on the workpiece 10 is processed (step S06). For example, plasma is generated in a process gas containing oxygen gas, and the silicon film is oxidized by colliding oxygen ions with the silicon film.

[0024] When the workpiece 10 passes through the operational film deposition chamber 4 and film processing chamber 5 and enters the monitoring section 6, the thickness of the compound film deposited on the workpiece 10 is detected in the monitoring section 6 (step S07). The control device 80 compares the detected thickness with the target thickness (step S08). The target thickness is stored in advance by the control device 80. If the detected thickness is less than the target thickness (step S08, No), the control device 80 maintains the rotation of the rotary table 31 and repeats steps S05 to S08 without changing the currently operating film deposition unit 40.

[0025] If the detected film thickness reaches the target film thickness (Step S08, Yes), the control device 80, if there is a film deposition unit 40 to be operated next, i.e., a film deposition unit 40 that has not yet been operated (Step S09, Yes), stops the operation of the film deposition unit 40 in the current film deposition chamber 4 and starts the film deposition unit 40 in the next film deposition chamber 4 (Step S10). Steps S05 to S08 are repeated, and if the detected film thickness reaches the target film thickness (Step S08, Yes), the control device 80 terminates the film deposition and film processing on the workpiece 10. On the other hand, if there is no film deposition unit 40 to be operated next (Step S09, No), the control device 80 terminates the film deposition and film processing on the workpiece 10.

[0026] For example, a niobium (Nb) target 42 is installed in the other deposition chamber 4, and a niobium film is deposited on the workpiece 10. In the film processing chamber 5, the niobium film is oxidized by colliding oxygen ions with it. As a result, a silicon oxide film of the target thickness is formed on the workpiece 10 as a lower layer, and a niobium oxide film of the target thickness is formed on top of the silicon oxide film. The deposition chambers 4 are not limited to two; three or more deposition chambers 4 may be arranged. The control device 80 should switch the deposition chamber 4 to be operated each time the monitoring section 6 detects that the compound film has reached the target thickness, and repeat steps S05 to S08.

[0027] (chamber) The chamber 20 will be described in more detail. As shown in Figure 3, the chamber 20 is formed by being surrounded by a disc-shaped ceiling 20a, a disc-shaped inner bottom surface 20b, and an annular inner circumferential surface 20c. The chamber 20 is provided with an exhaust port 21. An exhaust unit 90 is connected to the exhaust port 21. The exhaust unit 90 includes piping and a pump, valves, etc. (not shown). The exhaust from the exhaust unit 90 through the exhaust port 21 reduces the pressure inside the chamber 20, creating a vacuum.

[0028] (Transportation section) The transport unit 30 will now be described in more detail. The transport unit 30 has a rotary table 31 and a motor 32. As shown in Figure 3, the rotary table 31 of the transport unit 30 has a disc shape and is wide enough so as not to come into contact with the inner circumferential surface 20c. The transport unit 30 is equipped with a motor 32 that rotates the rotary table 31, and the motor 32 rotates the rotary table 31 continuously at a predetermined rotational speed with the center of the circle as the axis of rotation. In this embodiment, the motor 32 rotates the rotary table 31 counterclockwise as shown in Figure 1. As a result, the transport unit 30 transports the workpiece 10 in a circular motion along the transport path L, which is a circumferential trajectory. That is, the transport unit 30 transports the workpiece 10 in a circular motion so that it repeatedly passes through the film deposition chamber 4, the film processing chamber 5, and the monitoring section 6 in that order.

[0029] The rotary table 31 is equipped with holding parts 33. The holding parts 33 are grooves, holes, protrusions, jigs, holders, etc., arranged at circumferentially spaced positions on the mounting surface 311 of the rotary table 31, and hold the tray 34 on which the workpieces 10 are placed using mechanical chucks and adhesive chucks. The workpieces 10 are arranged in a matrix on the tray 34, for example, and six holding parts 33 are arranged on the rotary table 31 at 60° intervals.

[0030] (Road Lock Section) The load lock unit 70 is a device that, while maintaining the vacuum of the chamber 20, loads trays 34 loaded with unprocessed workpieces 10 into the chamber 20 from the outside using a transport means (not shown), and discharges trays 34 loaded with processed workpieces 10 to the outside of the chamber 20. A well-known structure can be used for this load lock unit 70, so its description is omitted.

[0031] (Film forming chamber) The deposition chamber 4 will now be described in more detail. As shown in Figure 3, a deposition unit 40 is located in the deposition chamber 4. This deposition unit 40 comprises a sputtering source and a plasma generator. The sputtering source comprises a target 42, a backing plate 43, and an electrode 44. The plasma generator comprises a power supply unit 46 and a sputtering gas introduction unit 49.

[0032] The target 42 is a plate-shaped member and is positioned at a distance from the transport path L of the workpiece 10 placed on the rotary table 31. The surface of the target 42 is held against the ceiling 20a of the chamber 20 so as to face the workpiece 10 placed on the rotary table 31. For example, three targets 42 are installed, and the three targets 42 are positioned to be aligned on the vertices of a triangle in a plan view (see Figure 1).

[0033] The backing plate 43 is a support member that holds the target 42. This backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for applying power to each target 42 individually from outside the chamber 20 and is electrically connected to the target 42. The power applied to each target 42 can be changed individually. In addition, the sputtering source is equipped with a magnet, a cooling mechanism, etc. as needed.

[0034] The power supply unit 46 is, for example, a DC power supply that applies a high voltage and is electrically connected to the electrode 44. The power supply unit 46 applies power to the target 42 through the electrode 44. The rotary table 31 is at the same potential as the grounded chamber 20, and a potential difference is generated when a high voltage is applied to the target 42. The power supply unit 46 can also be an RF power supply for high-frequency sputtering.

[0035] The sputtering gas introduction section 49 has piping 48 and a gas inlet 47, and is connected to a sputtering gas G1 supply source such as a cylinder, which is equipment in a factory or the like. The sputtering gas G1 supply source may be held on the film deposition apparatus 100 side. The piping 48 of the sputtering gas introduction section 49 is connected to the sputtering gas G1 supply source, penetrates the chamber 20 airtightly, and extends into the interior of the chamber 20, with its end opening as a gas inlet 47. The gas inlet 47 opens between the rotary table 31 and the target 42, and introduces the sputtering gas G1 for film deposition into the processing space 41 formed between the rotary table 31 and the target 42. An inert gas can be used as the sputtering gas G1, and argon gas is preferred.

[0036] As shown in Figures 1 and 3, the chamber 20 is partitioned by a partition wall 22. The partition wall 22 is a rectangular wall plate arranged radially from the center of a cylindrical shape, extending from the ceiling 20a toward the inner bottom surface 20b, but not reaching the inner bottom surface 20b. That is, a cylindrical space is secured on the side of the inner bottom surface 20b. The rotary table 31 is positioned in this cylindrical space. The lower end of the partition wall 22 faces the mounting surface 311 of the workpiece 10 on the rotary table 31, leaving a gap for the workpiece 10 placed on the rotary table 31 to pass through. The film deposition chamber 4 is partitioned by this partition wall 22.

[0037] In this film deposition section 40, sputtering gas G1 is introduced from the sputtering gas introduction section 49, and when the power supply section 46 applies a high voltage to the target 42 through the electrode 44, the sputtering gas G1 introduced into the processing space 41 formed between the rotary table 31 and the target 42 becomes plasma, generating active species such as ions. The ions in the plasma collide with the target 42, knocking out the material constituting the target 42 as sputtered particles.

[0038] Furthermore, the workpiece 10, which is circulated and transported by the rotary table 31, passes through this processing space 41. As the workpiece 10 passes through the processing space 41, sputtered particles are deposited on the workpiece 10, and a film made of sputtered particles is formed on the workpiece 10. The workpiece 10 is circulated and transported by the rotary table 31, and the film is formed as it repeatedly passes through this processing space 41. The thickness of the film deposited each time the workpiece passes through the film formation section 40 depends on the processing rate of the film formation section 50, but it is preferable for it to be a thin film of about 1 to 2 atoms (5 nm or less). As the workpiece 10 is circulated and transported multiple times, the thickness of the film increases, and a film of a predetermined thickness is formed on the workpiece 10.

[0039] (Membrane processing room) The film processing chamber 5 will be described in more detail. As shown in Figure 3, the film processing section 50 of the film processing chamber 5 is equipped with a plasma generator consisting of a cylindrical body 51, a window member 52, an antenna 53, an RF power supply 54, a matching box 55, and a process gas introduction section 58. The film processing section 50 also includes a process gas introduction section 58. The process gas introduction section 58 has piping 57 and a gas inlet 56 and is connected to a supply source of process gas G2, such as a cylinder, which is equipment within the factory. The supply source of process gas G2 may be held on the film deposition apparatus 100 side.

[0040] As shown in Figures 1 and 3, the cylindrical body 51 is a cylinder with a rounded rectangular horizontal cross-section and has an opening. The cylindrical body 51 is fitted into the ceiling 20a of the chamber 20 so that its opening faces away from the rotary table 31, and protrudes into the internal space of the chamber 20. The cylindrical body 51 is made of the same material as the rotary table 31. The window member 52 is a flat plate of dielectric material such as quartz, which is approximately similar in shape to the horizontal cross-section of the cylindrical body 51. The window member 52 is provided to close the opening of the cylindrical body 51 and separates the processing space 59, into which the process gas G2 containing oxygen gas from the chamber 20 is introduced, from the inside of the cylindrical body 51. The processing space 59 is the space formed between the rotary table 31 and the inside of the cylindrical body 51 in the film processing unit 50. Oxidation treatment is performed by repeatedly passing the workpiece 10, which is circulated and conveyed by the rotary table 31, through this processing space 59. The window member 52 may be a dielectric material such as alumina, or a semiconductor material such as silicon.

[0041] The antenna 53 is a conductor wound in a coil shape and is placed in the internal space of a cylindrical body 51, which is isolated from the processing space 59 in the chamber 20 by a window member 52. When an alternating current is passed through it, it generates an electric field. It is desirable that the antenna 53 be placed near the window member 52 so that the electric field generated from the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. An RF power supply 54 that applies a high-frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedance of the input and output sides.

[0042] The piping 57 of the process gas introduction section 58 is connected to the source of the process gas G2, penetrates the chamber 20 airtightly, and extends into the interior of the chamber 20, with its end opening as a gas inlet 56. The gas inlet 56 opens into the processing space 59 between the window member 52 and the rotary table 31, and introduces the process gas G2. The process gas G2 includes, for example, oxygen or nitrogen. In addition to oxygen gas or nitrogen gas, the process gas G2 may also include an inert gas such as argon gas.

[0043] In such a film processing unit 50, a high-frequency voltage is applied from the RF power supply 54 to the antenna 53. This causes a high-frequency current to flow through the antenna 53, generating an electric field due to electromagnetic induction. The electric field is generated in the processing space 59 through the window member 52, generating inductively coupled plasma of the process gas G2. At this time, the process gas G2 is also ionized, and the ions collide with the film on the workpiece 10, bonding with the atoms that make up the film. If the process gas G2 contains oxygen, the film processing unit 50 oxidizes the film on the workpiece 10. If the process gas G2 contains nitrogen, the film processing unit 50 nitrides the film on the workpiece 10.

[0044] (Surveillance area) The monitoring of film thickness will be explained in more detail. Figure 4 is a block diagram showing the configuration of the monitoring unit 60 of the film deposition apparatus 100. As shown in Figure 4, the film deposition apparatus 100 is equipped with a monitoring unit 60 that detects the film thickness formed on the workpiece 10. The monitoring unit 60 includes a detection window 65 located in the monitoring compartment 6 as a component, and irradiates the workpiece 10 with light through the detection window 65, acquires the reflected light from the workpiece 10 through the detection window 65, and analyzes the reflected light to detect the film thickness. The control device 80 compares the film thickness detected by the monitoring unit 60 with the target film thickness, determines whether to continue film deposition or end film deposition, and controls each element of the film deposition apparatus 100 based on the determination result. In addition to the detection window 65, the monitoring unit 60 is equipped with a light projection unit 62, a transmission unit 64, a spectroscopic unit 63, and an analysis unit 61.

[0045] The light-emitting unit 62 is a light source. The light emitted from this light-emitting unit 62 passes through the detection window 65 and reaches the workpiece 10. For example, the wavelength range of the light is in the range of 200 nm to 800 nm, and it may be configured to emit ultraviolet light with a wavelength of 400 nm or less. Examples of the light-emitting unit 62 include a xenon lamp, a mercury xenon lamp, a halogen lamp, etc. A mercury xenon lamp can irradiate light in the ultraviolet region and increase the luminous flux.

[0046] The spectroscopic unit 63 obtains the spectrum of reflected light by separating the reflected light from the workpiece 10 that has passed through the detection window 65 into light of each wavelength. Typically, this spectroscopic unit 63 is a prism or a diffraction grating. The analysis unit 61 analyzes the spectrum of the reflected light that has passed through the spectroscopic unit 63 to detect the film thickness on the workpiece 10. This analysis unit 61 includes various photodetectors such as CCDs and CMOSs ​​that individually receive light of each wavelength separated by the spectroscopic unit 63, and a processor such as a CPU.

[0047] The analysis unit 61 can apply various known film thickness detection methods as long as they are optical measurement methods, but for example, it detects the film thickness using the peak-valley method (PV method). There is an optical path difference between the reflected light from the film surface and the reflected light from the surface of the workpiece 10. When this optical path difference is an integer multiple of a certain wavelength, the light of the wavelength component of the interference light between the reflected light from the surface of the workpiece 10 and the reflected light from the film surface is added in a direction in which the phases match and reinforce each other, while the light of the wavelength component that is out of phase by 1 / 2 wavelength is subtracted in a direction in which it cancels each other out. The analysis unit 61 identifies these wavelengths and detects the film thickness from 2nd = iλ (where d is the film thickness, i is an integer, and λ is the identified wavelength).

[0048] The transmission unit 64 is positioned between the light-emitting unit 62 and the detection window 65, and between the detection window 65 and the spectral unit 63. This transmission unit 64 guides the light from the light-emitting unit 62, which is incident from one end, toward the detection window 65 at the other end. The transmission unit 64 also receives the reflected light from the workpiece 10 that has passed through the detection window 65 at the other end and guides it toward the spectral unit 63. An optical fiber is one example of such a transmission unit 64, but it is not limited to this, and may also be an optical system including various optical components such as lenses and mirrors.

[0049] Figure 5 is a schematic diagram showing the installation configuration of the monitoring unit 60. As shown in Figure 5, a cylindrical housing 67 is attached to the ceiling 20a of the chamber 20 in the monitoring compartment 6. The housing 67 extends from the ceiling 20a toward the installation surface 311 on which the workpiece 10 of the rotary table 31 is placed. The open end of the housing 67 on the installation surface 311 side is closed by a holder 66. The detection window 65 is held in this holder 66 via a sealing member. By being held in the holder 66, the detection window 65 faces the installation surface 311 of the rotary table 31 while maintaining a distance from it.

[0050] The detection window 65 faces the trajectory traced by the workpiece 10 moving on the rotary table 31 on the mounting surface 311. In order to obtain reflected light with a good signal-to-noise ratio (S / N ratio), it is preferable to position the detection window 65 on the inner circumference side of the rotary table 31. That is, the housing 67 is attached to the inner circumference side of the rotary table 31. The inner circumference side of the rotary table 31 is closer to the center of rotation than the midpoint of the line segment along the radius R from the center of rotation of the rotary table 31 to the outer edge. The peripheral speed is slower on the inner circumference side of the rotary table 31. Therefore, the workpiece 10 remains directly below the detection window 65 for longer than the time required to obtain reflected light with a good S / N ratio.

[0051] The transmission unit 64 is located inside the housing 67, with its end facing the detection window 65. The transmission unit 64 is brought out from the ceiling 20a of the chamber 20 through the housing 67 to the outside. With the transmission unit 64 and the detection window 65, the light transmitted by the transmission unit 64 passes through the detection window 65 and is directed towards the workpiece 10 moving directly below the detection window 65. The light directed towards the workpiece 10 is reflected by the surface of the workpiece 10 or a film formed on the workpiece 10, passes through the detection window 65, and is transmitted by the transmission unit 64.

[0052] Figure 6 is an enlarged view of the monitoring section 6. As shown in Figures 5 and 6, a plate-like portion 68 is attached around the detection window 65. The plate-like portion 68 is a wide, ring-shaped plate centered on the detection window 65. This plate-like portion 68 has an opposing surface 681 that faces the mounting surface 311 of the rotary table 31. This opposing surface 681 has its base end at the side circumferential surface of the holder 66, extends around the detection window 65, and extends along the mounting surface 311 of the rotary table 31. Preferably, the plate-like portion 68 extends parallel to the mounting surface 311. There are no particular limitations on the material or thickness of the plate-like portion 68 as long as it is not prone to bending; for example, a 5 mm thick aluminum plate may be used as the plate-like portion 68.

[0053] The plate-like portion 68 is positioned at a distance H from the film-forming surface of the workpiece 10 mounted on the rotary table 31. The distance H is set to a distance greater than or equal to the distance at which the passing workpiece 10 does not come into contact with the plate-like portion 68, but it is preferable to make it as narrow as possible, for example it can be 5 mm. This distance H can also be the same as the distance between the end of the partition wall 22 on the rotary table 31 side and the film-forming surface of the workpiece 10. Furthermore, the length D of the plate-like portion 68, that is, the width in the ring radial direction from the inner edge to the outer edge of the plate-like portion 68, is greater than or equal to the mean free path of the sputtered particles, i.e., the molecules of the material constituting the target.

[0054] Furthermore, it is preferable that the opposing surface 681 of the plate-like portion 68 has a surface roughness of 4 μm to 14 μm in terms of arithmetic mean roughness Ra. It is even more preferable that the opposing surface 681 of the plate-like portion 68 made of stainless steel (SUS) has a surface roughness of 4 μm to 10 μm in terms of arithmetic mean roughness Ra. It is even more preferable that the opposing surface 681 of the plate-like portion 68 made of aluminum has a surface roughness of 6 μm to 14 μm in terms of arithmetic mean roughness Ra. This surface roughness of the opposing surface 681 can be formed, for example, by blasting with an abrasive material with a grit size of approximately #20 to #60.

[0055] Figure 7 is a schematic diagram illustrating the function of the plate-like portion 68. Flying particles 421 are floating around the detection window 65. The flying particles 421 are, for example, sputtered particles that leak out from the deposition chamber 4 and float around. Before reaching the detection window 65, the flying particles 421 must pass through the narrow and long space defined by the plate-like portion 68 and the mounting surface 311 of the rotary table 31. Therefore, many of the flying particles 421 come into contact with the plate-like portion 68 and are captured by it before reaching the detection window 65. Many of the flying particles 421 are blocked by the plate-like portion 68 and cannot reach the detection window 65. In this way, the plate-like portion 68 captures the flying particles 421 and suppresses contamination of the detection window 65.

[0056] In particular, if the length D of the plate-like portion 68 is greater than or equal to the mean free path of the incoming particles 421, the probability of capturing the incoming particles 421 increases, and the contamination of the detection window 65 is further suppressed. This is because the distance H from the film-forming surface of the workpiece 10 to the plate-like portion 68 is very narrow, and even if the incoming particles 421 are incident at an oblique angle from between the gap H toward the detection window 65, if the length of the plate-like portion 68 is greater than or equal to the mean free path, the possibility of them being captured along the way increases. Furthermore, the length D of the plate-like portion 68 is preferably greater than 20 cm, and more preferably 30 cm or more. The inventors confirmed through experiments that when the distance H from the film-forming surface of the workpiece 10 mounted on the rotary table 31 to the plate-like portion 68 was 5 mm and the length D of the plate-like portion 68 was 30 cm, cleaning of the detection window 65 was unnecessary for at least 3 months.

[0057] Furthermore, the opposing surface 681 of the plate-like portion 68 has a surface roughness of 4 μm to 10 μm in arithmetic mean roughness Ra. Therefore, the probability of incoming particles 421 that come into contact with the plate-like portion 68 adhering to the opposing surface 681 increases. Moreover, even if they do not adhere to the opposing surface 681 of the plate-like portion 68, the reflection direction of the incoming particles 421 becomes more varied compared to the case where the opposing surface 681 is smooth. That is, the number of incoming particles 421 that are reflected in a direction different from the detection window 65 increases. Consequently, the probability of incoming particles 421 that were not captured by the opposing surface 681 being reflected towards the detection window 65 also decreases. Therefore, the opposing surface 681 having a surface roughness of 4 μm to 10 μm in arithmetic mean roughness Ra can further reduce the number of incoming particles 421 that are incident towards the detection window 65.

[0058] Furthermore, as explained using Figures 8 and 9, the number of incoming particles 421 incident toward the detection window 65 can be further reduced. Figure 8 is an enlarged view of the area around the detection window 65. As shown in Figure 8, the detection window 65 has an outer end face 651. The outer end face 651 is the surface facing the installation surface 311 of the rotary table 31, and is the surface that emits light to the workpiece 10 and is incident on by reflected light from the workpiece 10. The holder 66 also has a surrounding wall 661 that surrounds the entire perimeter of the detection window 65. The detection window 65 is fitted into the hole defined by this surrounding wall 661 and is supported all around by the inner circumferential surface of the surrounding wall 661.

[0059] The surrounding wall 661 extends toward the mounting surface 311 of the rotary table 31 without covering the outer end face 651, and protrudes all around toward the mounting surface 311 of the rotary table 31 beyond the outer end face 651. In other words, the distance between the end of the surrounding wall 661 and the mounting surface 311 is narrower than the distance between the outer end face 651 and the mounting surface 311 of the rotary table 311. In short, the outer end face 651 is recessed compared to the tip of the surrounding wall 661.

[0060] The outer end face 651 of the detection window 65 is an inclined surface tilted with respect to the central axis 65A of the detection window 65. The inclined outer end face 651 faces in the direction in which the deposition chamber 4 exists, that is, in the opposite direction to the inner circumference of the rotary table 31. In other words, the outer end face 651 is inclined to face the outer circumference of the rotary table 31. When the monitoring section 6 and the deposition chamber 4 are located on the same circumference, the direction farther away from the deposition chamber 4 is the direction opposite to the inner circumference of the rotary table 31. The outer end face 651 is oriented opposite to the inner circumference of the rotary table 31 in order to reduce the area ratio of the outer end face 651 that is exposed in the direction from which more incoming particles 421 are coming. Therefore, it is preferable that the outer end face 651 faces 180° in the opposite direction, but as long as it is oriented even 1° in the opposite direction to the inner circumference of the rotary table 31, based on the radial direction outward from the center of the chamber 20, the outer end face 651 can be oriented away from all deposition chambers 4, regardless of where the deposition chambers 4 are positioned on the same circumference. This reduces the area ratio of the outer end face 651 that is exposed in the direction from which more incoming particles 421 are coming.

[0061] Figure 9 is a schematic diagram illustrating the positional relationship between the surrounding wall 661 and the outer end face 651, and the action based on the orientation of the outer end face 651. As shown in Figure 9, the probability of incoming particles 421 reaching the vicinity of the detection window 65 without being captured by the plate-like portion 68 is not zero. However, the outer end face 651 of the detection window 65 is recessed within the area surrounded by the surrounding wall 661. Therefore, the passage to the detection window 65 has a labyrinthine structure that starts from the outer edge of the plate-like portion 68 and bends directly below the detection window 65. Consequently, even if an incoming particle 421 can pass between the plate-like portion 68 and the installation surface 311 of the rotating table 31, if it cannot change course toward the detection window 65 due to reflection or the like, it cannot reach the detection window 65, and the adhesion of incoming particles 421 to the detection window 65 is further suppressed.

[0062] However, in order to obtain reflected light with sufficient light intensity for analysis, it is preferable that the light emitted from the detection window 65 irradiates a single point on the workpiece 10. Since light diffuses when the distance between the detection window 65 and the surface of the workpiece 10 is long, the distance between the detection window 65 and the surface of the workpiece 10 is preferably about 40 mm. Also, the position of the tip of the surrounding wall 661 is limited to the height through which the workpiece 10 can pass. In that case, the distance at which the outer end face 651 retracts inward from the surrounding wall 661 (the distance between the tip of the surrounding wall 661 and the outer end face 651) is preferably a maximum of 40 mm optically.

[0063] Some incoming particles 421 may fly towards the area surrounded by the surrounding wall 661 at a steep angle, after repeatedly reflecting between the plate-like portion 68 and the mounting surface 311 of the rotating table 31. However, the outer end face 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the direction of the deposition chamber 4, which is the source of the incoming particles 421. Therefore, unless the incoming particles 421 flying from the deposition chamber 4 side are directed towards the outer end face 651 at an angle nearly perpendicular to the area surrounded by the surrounding wall 661, they cannot enter the outer end face 651 and are captured by the inner circumferential surface of the surrounding wall 661. Consequently, the adhesion of incoming particles 421 to the detection window 65 is further suppressed. The inner circumferential surface of the surrounding wall 661 may also be roughened. If it is roughened, the probability of incoming particles 421 being captured by the inner circumferential surface of the surrounding wall 661 increases.

[0064] As shown in Figures 8 and 9, the inner end face 652 of the detection window 65, that is, the end face opposite to the outer end face 651 and facing the internal space of the housing 67, may be perpendicular or oblique to the central axis 65A of the detection window 65. Preferably, the inner end face 652 is parallel to the outer end face 651, which is inclined with respect to the central axis 65A of the detection window 65. As shown in Figure 8, if the light L1 emitted from the transmission unit 64 is parallel to the central axis 65A of the detection window 65, and the outer end face 651 and the inner end face 652 are parallel, then when it passes through the detection window 65 and is emitted, it returns to being parallel to the central axis 65A of the detection window 65 and is incident perpendicular to the workpiece 10. In addition, reflected light from the workpiece 10 can be incident on the transmission unit 64 by following the same optical path as the light emitted from the transmission unit 64.

[0065] Furthermore, as shown in Figure 8, if the inner end face 652 is inclined with respect to the central axis 65A of the detection window 65, the light L2 emitted from the transmission unit 64 and reflected by the inner end face 652 of the detection window 65 will, for example, be directed toward the inner circumferential surface of the housing 67, making it difficult for it to return to the transmission unit 64 and thus less likely to interfere with reflected light from the surface of the workpiece 10 or the film surface. Since the outer end face 651 is also inclined, the light L3 that travels through the detection window 65 and is reflected by the outer end face 651 will, for example, be directed toward the inner circumferential surface of the housing 67 or the inner circumferential surface of the holder 66, making it difficult for it to return to the transmission unit 64 and thus less likely to interfere with reflected light from the surface of the workpiece 10 or the film surface. Consequently, the accuracy of film thickness detection is improved.

[0066] In order to direct the light reflected from the outer end face 651 and the inner end face 652 in a direction other than the direction in which it enters the transmission unit 64, it is preferable that the inclination angle of the outer end face 651 and the inner end face 652 is between 1.5° and 45° with respect to the central axis 65A of the detection window 65. Within this range, the light reflected from the outer end face 651 and the inner end face 652 is unlikely to return to the transmission unit 64.

[0067] (effect) Thus, the film deposition apparatus 100 is equipped with a monitoring unit 60 for monitoring the film thickness on the workpiece 10. The monitoring unit 60 comprises a detection window 65, a light-emitting unit 62, and an analysis unit 61. The detection window 65 is located on the transport path L of the workpiece 10 by the transport unit 30 and outside the film deposition chamber 4, and light for film thickness detection is transmitted through it. This monitoring unit 60 further comprises a plate-shaped portion 68. The plate-shaped portion 68 faces the mounting surface 311 of the rotary table 31 on which the workpiece 10 is placed, and extends along the mounting surface 311 of the rotary table 31.

[0068] As a result, a space exists between the film deposition section and the detection window 65, defined by the plate-like section 68 and the mounting surface 311 of the rotary table 31. Many flying particles 421 passing through this space are captured by the plate-like section 68 before reaching the detection window 65. Therefore, the adhesion of flying particles 421 to the detection window 65 can be suppressed. By suppressing the adhesion of flying particles 421 to the detection window 65, the accuracy of film thickness detection on the workpiece 10 is improved, and the frequency of cleaning the detection window 65 is reduced, thereby improving the operating rate of the film deposition apparatus 100.

[0069] It is preferable that the plate-shaped portion 68 is installed around the detection window 65. By installing it around the detection window 65, the area of ​​the plate-shaped portion 68 required to prevent the incoming particles 421 from reaching the detection window 65 can be minimized. However, it is sufficient to suppress sputtered particles leaking from the deposition chamber 4 from reaching the detection window 65, and the plate-shaped portion 68 should be installed in the route that the sputtered particles take to reach the detection window 65. That is, the plate-shaped portion 68 should be positioned between the deposition chamber 4 and the detection window 65 in the transport path L.

[0070] For example, a plate-like portion 68 may be provided at the lower end of the partition wall 22 that defines the film deposition chamber 4. In this case, the plate-like portion 68 extends outward from the partition wall 22, with the partition wall 22 as its base. Alternatively, a plate-like portion 68 may be provided at the lower end of the cylindrical body 51 that defines the film processing chamber 5. In this case, the plate-like portion 68 extends outward from the cylindrical body 51, with the cylindrical body 51 as its base. Furthermore, it may extend into the monitoring compartment 6.

[0071] Furthermore, although the plate-shaped portion 68 is designed as a ring extending radially from the entire circumference of the detection window 65, it is sufficient if the plate-shaped portion 68 can be installed along the route that sputtered particles take to reach the detection window 65. In other words, if the direction in which the sputtered particles are flying is localized, the plate-shaped portion 68 may be designed to extend in a localized direction. For example, in this film deposition apparatus 100, if there are no or few flying particles 421 coming from the load lock portion 70 side, the plate-shaped portion 68 may be designed to extend only towards the film processing chamber 5 side. For example, it may be crescent-shaped.

[0072] Furthermore, the plate-like portion 68 extends along the mounting surface 311 of the rotary table 31 for a length greater than the mean free path of the molecules of the material constituting the target 42. This increases the probability that incoming particles 421 will come into contact with the plate-like portion 68. Consequently, the plate-like portion 68 can capture more incoming particles 421 and further suppress their adhesion to the detection window 65.

[0073] Furthermore, the plate-shaped portion 68 faces the mounting surface 311 of the rotary table 31 and has an opposing surface having a surface roughness of 4 μm to 14 μm in arithmetic mean roughness Ra. This suppresses the reflection of incoming particles 421 from the plate-shaped portion 68, increasing the probability that incoming particles 421 will remain on the plate-shaped portion 68. Therefore, the plate-shaped portion 68 can capture more incoming particles 421 and further suppress their adhesion to the detection window 65.

[0074] Furthermore, the detection window 65 faces the mounting surface 311 of the rotary table 31 and has an outer end surface 651 from which light from the light-emitting unit 62 is emitted toward the workpiece 10. The outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the inner circumference of the rotary table 31. As a result, the area of ​​the outer end surface 651 exposed in the direction from which many flying particles 421 are flying is reduced, making it difficult for flying particles 421 to come into contact with the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

[0075] Furthermore, the holder 66 that holds the detection window 65 has a surrounding wall 661 that encloses the outer end face 651, and the outer end face 651 is positioned recessed compared to the end of the surrounding wall 661 that faces the installation surface 311. In other words, the holder 66 holds the detection window 66 such that the distance between the end of the surrounding wall 611 and the installation surface 311 is narrower than the distance between the outer end face 651 and the installation surface 311. As a result, even if incoming particles 421 can reach the vicinity of the detection window 65, they will be blocked by the surrounding wall 661 and will have difficulty contacting the outer end face 651. Therefore, adhesion to the detection window 65 can be suppressed.

[0076] Furthermore, the detection window 65 is positioned on the inner circumference side of the rotary table 31. Since the peripheral speed is slower on the inner circumference side of the rotary table 31, sufficient light can be shone onto the workpiece 10. Therefore, a good signal-to-noise ratio can be achieved, and the accuracy of film thickness detection is improved.

[0077] In this film deposition apparatus 100, the detection window 65 is positioned downstream of the film processing chamber 5 in the direction of transport of the workpiece 10, but this is not the only option. That is, in some cases, the film deposition apparatus 100 may deposit compound particles onto the workpiece 10 in the film deposition chamber 4. For example, process gas G2 may also be introduced into the processing space 41, and particles ejected from the target 42 may react with ions in the process gas G2 to form a compound, which may then be deposited onto the workpiece 10. In this case, the film processing chamber 5 can be omitted, and the monitoring section 6 is positioned adjacent to the film deposition chamber 4. Therefore, the detection window 65 is positioned downstream of the film deposition chamber 4 in the direction of transport of the workpiece 10.

[0078] Furthermore, the monitoring unit 60 acquires light reflected from the workpiece 10 through the detection window 65 and uses the analysis unit 61 to detect the film thickness based on the light reflected from the workpiece 10. However, the optical film thickness detection method is not limited to this. For example, in addition to the detection window 65 that emits light from the light-emitting unit 62, a detection window 65 that transmits light that passes through the workpiece 10 is installed on the opposite side of the rotary table 31. The workpiece 10 is made of a translucent material, and the rotary table 31 and tray 34 are also made of light-transmitting materials. The optical system, which includes the detection window 65 that transmits light that passes through the workpiece 10, is equipped with a spectroscopic unit 63 and an analysis unit 61. The analysis unit 61 may detect the film thickness from the spectral transmittance characteristics based on the spectrum of the transmitted light.

[0079] (Other embodiments) The present invention is not limited to the embodiments described above, but also includes other embodiments shown below. Furthermore, the present invention also includes forms that combine all or any of the embodiments described above and the other embodiments shown below. Moreover, these embodiments can be modified in various ways without departing from the scope of the invention, and such variations are also included in the present invention.

[0080] The deposition chamber 4, the film processing chamber 5, and the monitoring compartment 6 are located at the bottom of the chamber 20, and the vertical relationship between the deposition chamber 4, the film processing chamber 5, the monitoring compartment 6 and the rotary table 31 may be reversed. In this case, the mounting surface 311 of the rotary table 31 is the surface that faces downward when the rotary table 31 is in a horizontal direction, i.e., the bottom surface. The mounting surface of the deposition apparatus 100 may be the floor, the ceiling, or a side wall. Furthermore, the arrangement of the rotary table 31 is not limited to horizontal; it may also be arranged vertically or at an angle. In addition, the mounting surface 311 of the rotary table 31 may be provided on both opposing sides.

[0081] In other words, the direction of the rotation plane of the rotary table 31 can be any direction, and the positions of the tray 34, the film deposition unit 40, the film processing unit 50, and the detection window 65 should be such that the workpiece 10 held in the tray 34 can be processed by the film deposition unit 40 and the film processing unit 50, and that it can be irradiated with light by the detection window 65.

[0082] In the film deposition apparatus 100, the film is treated by the film processing unit 50, such as oxidation or nitriding, and as the film becomes a compound film, the light transmittance of the film is increased, making film thickness detection possible. In the film deposition apparatus 100, it is also possible to deposit a film on the workpiece 10 while introducing a process gas in the film deposition chamber 4 to oxidize or nitride the sputtered particles. In this case, a compound film with high light transmittance is deposited in the film deposition chamber 4, the film processing unit 50 can be removed, and a monitoring section 6 can be provided downstream of the film deposition chamber 4 in the transport direction. That is, in this embodiment, as long as film thickness detection can be performed on a compound film that has been oxidized or nitrided, the configuration is not limited to providing a monitoring section 6 downstream of the film processing chamber 5 in the transport direction.

[0083] Furthermore, in the above embodiment, the monitoring unit 60 determines whether to continue or end film deposition based on the detected film thickness and controls each element of the film deposition apparatus based on the determination result. However, such feedback control does not have to be performed for the film deposition process of all workpieces 10. For example, if workpieces 10 are loaded into the chamber 20 multiple times and the same film deposition process is performed, feedback control may be performed for the workpiece 10 loaded for the first time, and for workpieces 10 loaded from the second time onward, the system may determine whether to continue or end film deposition based on the film deposition time taken for the first time and control each element of the film deposition apparatus. In other words, in this embodiment, it is sufficient to detect the film thickness deposited on the workpieces 10 loaded into the chamber 20 at any given time, and the system is not limited to detecting the film thickness of all workpieces 10. [Explanation of Symbols]

[0084] 10 Work 20 Chambers 20a Ceiling 20b Inner bottom surface 20c Inner surface 21 Exhaust vent 22 Partition walls 30 Conveying section 31 Rotating Table 311 Installation surface 32 motors 33 Holding part 34 trays 4 Film forming chamber 40 Film forming section 41 Processing space 42 Targets 421 Incoming Particles 43 Backing Plate 44 electrode 46 Power supply section 47 Gas inlet 48 Piping 49 Sputtering gas inlet 5. Membrane Processing Room 50 Film Processing Section 51 Cylindrical body 52 Detection window material 53 Antenna 54 RF power supply 55 Matching Box 56 Gas inlet 57 Piping 58 Process gas introduction section 59 Processing space 6. Surveillance Section 60 Monitoring Department 61 Analysis Department 62. Lighting Unit 63 Spectroscopic section 64 Transmission section 65 Detection window 651 Outer end face 652 Inner end face 65A center axis 66 Holder 661 Siege Wall 67 cabinets 68 Plate-like part 681 Opposing surface 70 Load lock section 80 Control device 90 Exhaust section 100 Film deposition equipment G1 Spatter Gas G2 process gas

Claims

1. A conveying unit having a rotating table on which a workpiece is placed on a mounting surface and which rotates, and which circulates and conveys the workpiece along a circumferential conveying path by rotating the rotating table, A film-forming chamber for forming a film on the workpiece is provided, located opposite the aforementioned transport path and partitioned off from the transport path. A film deposition unit is located in the aforementioned film deposition chamber and comprises a target which is the material source for the film, and a plasma generator which converts sputtering gas introduced between the target and the rotating table into plasma, thereby forming a film on the workpiece by sputtering the target with plasma. A monitoring unit for monitoring the thickness of the film on the workpiece, Equipped with, The aforementioned monitoring unit, A detection window is provided, which is located outside the section of the film deposition chamber on the transport path and facing the transport path, and through which light for film thickness detection is transmitted. A light-emitting unit that irradiates light onto the workpiece on which the film is formed through the detection window, An analysis unit that detects the thickness of the film based on the reflected light from the workpiece or the light transmitted through the workpiece, It has, The aforementioned detection window is The rotating table has an end face that faces the mounting surface and from which light from the light-emitting unit is emitted toward the workpiece, The end face is inclined with respect to the central axis of the detection window and faces in the direction opposite to the direction in which the film deposition chamber exists. A film deposition apparatus characterized by the following.

2. The holder for holding the detection window is provided, The detection window faces the mounting surface of the rotating table and has an end face from which light from the light-emitting unit is emitted toward the workpiece. The holder has a surrounding wall that encloses the end face, The distance between the end of the surrounding wall and the installation surface is narrower than the distance between the end face and the installation surface. The film deposition apparatus according to claim 1, characterized by the following:

3. The detection window is located on the inner circumference side of the rotary table. A film deposition apparatus according to claim 1 or 2, characterized by the following:

4. A film processing chamber is located downstream of the film formation chamber in the direction of workpiece transport, opposite to the transport path, and is used to chemically react the film formed in the film formation section. The film processing chamber is arranged and includes a process gas introduction unit for introducing process gas, and a plasma generator for converting the process gas into plasma, and a film processing unit for chemically reacting the film, Furthermore, The detection window is located downstream of the film processing chamber in the workpiece transport direction. A film deposition apparatus according to any one of claims 1 to 3, characterized by the following:

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