Plasma processing equipment

Abstract

A plasma processing device (1) comprising a vacuum container (2) which accommodates therein a workpiece (W), a high-frequency window (WR) which introduces a high-frequency magnetic field into the vacuum container (2), an antenna (7) which is provided so as to face the high-frequency window (WR) and generates the high-frequency magnetic field, a turntable (3) which rotates inside the vacuum container (2), and an application mechanism (SM) which applies a predetermined bias voltage to the workpiece (W). Further, the application mechanism (SM) comprises a holder (H) provided to the turntable (3) so as to hold the workpiece (W) and an electrode plate (SM2) electrically connected to the holder (H) inside the vacuum container (2). The application mechanism (SM) applies the bias voltage from the electrode plate (SM2) to the workpiece (W) positioned between the antenna (7) and a rotary shaft (3b) of the turntable (3).

Description

Technical Field

[0001] This disclosure relates to a plasma processing apparatus.

Background Art

[0002] A plasma processing apparatus that generates plasma inside a vacuum chamber using an antenna is known. The plasma processing apparatus performs a predetermined plasma treatment on the workpiece using the generated plasma according to its type. Specifically, as a plasma treatment, for example, there is known a plasma processing apparatus that performs a film removal treatment for removing a film from the surface of a workpiece.

[0003] Also, for example, Patent Document 1 discloses a film removal apparatus that irradiates a coating material with an ion flow to remove a film from the coating material. This conventional film removal apparatus places the coated coating material at an ion flow concentration portion where two or more ion flows overlap, and irradiates the coating material with an ion flow to remove the film from the coating material.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the prior art as described above, there is a problem that the film removal treatment of the workpiece cannot be performed accurately.

[0006] This disclosure has been made in view of the above problems, and an object thereof is to provide a plasma processing apparatus capable of accurately processing a workpiece.

Means for Solving the Problems

[0007] To solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure comprises a vacuum vessel for housing an object to be processed, a high-frequency window for introducing a high-frequency magnetic field for generating plasma into the vacuum vessel, an antenna provided on the outside of the vacuum vessel facing the high-frequency window and generating the high-frequency magnetic field, a turntable that rotates inside the vacuum vessel, and an application mechanism for applying a predetermined bias voltage to the object to be processed, wherein the application mechanism comprises a holder provided on the turntable for holding the object to be processed, and an electrode plate electrically connected to the holder inside the vacuum vessel, and applies the bias voltage from the electrode plate to the object to be processed located between the antenna and the rotation axis of the turntable. [Effects of the Invention]

[0008] According to one aspect of this disclosure, a plasma processing apparatus capable of processing an object with high precision can be provided. [Brief explanation of the drawing]

[0009] [Figure 1] This figure illustrates the main components of a plasma processing apparatus according to Embodiment 1 of this disclosure. [Figure 2] This is a cross-sectional view showing the main components of the plasma processing apparatus described above. [Figure 3] This is a plan view illustrating an example of the configuration of the high-frequency window shown in Figure 1. [Figure 4] This figure illustrates an example of the holder configuration shown in Figure 1. [Figure 5] This graph shows an example of the relationship between the electron density of the plasma and the sheath thickness in the plasma processing apparatus described above. [Figure 6] This diagram illustrates an example of the relationship between the workpiece and the sheath during the film removal process. [Figure 7] This is a cross-sectional view showing the main components of a plasma processing apparatus according to Embodiment 2 of this disclosure. [Figure 8] This figure illustrates the main components of a plasma processing apparatus according to Embodiment 3 of this disclosure. [Figure 9] It is a cross-sectional view showing the main configuration of the plasma processing apparatus shown in FIG. 8. [Figure 10] It is a diagram for explaining the main configuration of the plasma processing apparatus according to Embodiment 4 of the present disclosure. [Figure 11] It is a top view showing the main configuration of the plasma processing apparatus shown in FIG. 10. [Figure 12] It is a diagram for explaining the main configuration of the plasma processing apparatus according to Embodiment 5 of the present disclosure. [Figure 13] It is a diagram for explaining a configuration example of an electrode plate and a holder of the plasma processing apparatus shown in FIG. 12. [Figure 14] It is a diagram for explaining the main configuration of the plasma processing apparatus according to Embodiment 6 of the present disclosure. [Figure 15] It is a cross-sectional view showing the main configuration of the plasma processing apparatus shown in FIG. 14. [Figure 16] It is a diagram for explaining a configuration example of the holder shown in FIG. 14.

Mode for Carrying Out the Invention

[0010] 〔Embodiment 1〕 Hereinafter, Embodiment 1 of the present disclosure will be described in detail with reference to FIGS. 1 to 4. FIG. 1 is a diagram for explaining the main configuration of a plasma processing apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a top view showing the main configuration of the plasma processing apparatus 1. FIG. 3 is a plan view for explaining a configuration example of the high-frequency window WR shown in FIG. 1. FIG. 4 is a diagram for explaining a configuration example of the holder H shown in FIG. 1.

[0011] In the following description, as a predetermined plasma process, inductively coupled plasma is used, covered A plasma processing apparatus 1 that performs a film removal process of removing a film from the surface of a work W in order to regenerate the surface of the work W as a processing object will be exemplified and described.

[0012] However, the present disclosure can be applied to a plasma processing apparatus that performs a metal surface treatment such as a carburizing treatment, a nitriding treatment, an ashing treatment, or an etching treatment on the surface of the workpiece W as a predetermined plasma treatment. Further, the present disclosure can be applied to a plasma processing apparatus that performs a film forming treatment for forming a predetermined film on the surface of the workpiece W by a plasma CVD (Chemical Vapor Deposition) method or a sputtering method as a predetermined plasma treatment.

[0013] <Configuration of Plasma Processing Apparatus 1> As shown in FIG. 1, the plasma processing apparatus 1 of the first embodiment includes a vacuum chamber 2, a turntable 3, a high-frequency window WR, an antenna 7, and an application mechanism SM. In the plasma processing apparatus 1, the workpiece W is carried in and out of the inside of the vacuum chamber 2 through a door provided in the vacuum chamber 2 by a transfer mechanism (not shown). In addition to this description, the vacuum chamber 2 may be opened and the workpiece W may be exchanged one by one or together with the turntable 3.

[0014] The workpiece W can be, for example, a drill for metal processing made of a metal material such as tungsten carbide or high-speed tool steel. Further, the workpiece W can be a tool other than a drill, for example, an end mill, a mold, or a special tool, or a special part for an automobile or an aircraft. The plasma processing apparatus 1 removes a film such as a diamond-like carbon film formed on the surface of the workpiece W by the above-described predetermined plasma treatment.

[0015] <Vacuum Chamber 2> The vacuum vessel 2 is constructed, for example, from a metal material and includes a vessel body 2a for forming a processing chamber that performs the predetermined plasma treatment on the workpiece W. The vessel body 2a is configured, for example, in a cylindrical shape, as shown in Figures 1 and 2. Furthermore, an upper lid 2c and a lower lid 2d are airtightly attached to the upper and lower openings of the vessel body 2a, and the vacuum vessel 2 is configured to be vacuumed to a predetermined degree by a vacuum pump (not shown) with the workpiece W inside. The vacuum vessel 2 is also grounded via a grounding wire (not shown), and a predetermined processing gas such as argon can be introduced into the vacuum vessel 2 as appropriate.

[0016] <Turntable 3> The turntable 3 is constructed, for example, from a metal material, and comprises a disc-shaped table body 3a and a rotating shaft 3b located in the center of the table body 3a. In the turntable 3, the rotating shaft 3b is rotatably and airtightly attached to the lower lid 2d of the vacuum container 2, and a drive mechanism (not shown) is connected to the rotating shaft 3b. In the turntable 3, the table body 3a rotates in the R1 direction inside the vacuum container 2 as the rotating shaft 3b rotates in the R1 direction shown in Figure 1.

[0017] The table body 3a is provided with, for example, multiple holders H to hold the workpiece W, and a predetermined plasma treatment is sequentially performed on the workpiece W inside the plasma treatment area PA described later. In other words, the table body 3a rotates at a predetermined rotational speed (for example, 10 rpm), and the defilm removal treatment for each workpiece W is completed by, for example, several rotations of the table body 3a. It is preferable that the diameter of the table body 3a be as close as possible to the inner diameter of the container body 2a, that is, the inner wall surface 2b of the container body 2a, in order to effectively utilize the high-density plasma inside the plasma treatment area PA.

[0018] <High-frequency window WR> The high-frequency window WR comprises a metal plate 5 and a dielectric plate 6, and is configured to introduce a high-frequency magnetic field that generates plasma into the interior of the container body 2a of the vacuum vessel 2. Specifically, in the vacuum vessel 2, the high-frequency window WR is attached to the container body 2a so as to close an opening 2b1 provided in the inner wall surface 2b of the container body 2a.

[0019] The metal plate 5 is made of one metal selected from the group including, for example, copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or an alloy thereof, and is provided on the container body 2a side as shown in Figures 1 and 2. The metal plate 5 is also provided with a plurality of slits 5S, as illustrated in Figure 3. These slits 5S are provided at predetermined intervals along the extending direction of the antenna 7.

[0020] Furthermore, each slit 5S is composed of a rectangular opening, for example, shown in Figure 3 by dimensions L1 and L2. In slit 5S, dimensions L1 and L2 are, for example, values ​​within the range of 30 mm to 60 mm and 5 mm to 30 mm. In Figure 11 shown later, the opening dimension L3 of the opening 2b1 to which the high-frequency window WR is installed is shown. This opening dimension L3 is set to a value within the range of 40 mm to 80 mm, and is set to be larger than the dimension L1 of slit 5S in order to efficiently introduce the high-frequency magnetic field into the vacuum vessel 2.

[0021] The dielectric plate 6 is made of, for example, a ceramic material such as alumina, silicon carbide, or silicon nitride, or an inorganic material such as quartz glass or alkali-free glass, or a synthetic resin plate such as fluororesin, and is provided on the antenna 7 side of the metal plate 5. The dielectric plate 6 is attached to the metal plate 5 so as to cover at least the slits 5S. As a result, in the high-frequency window WR, the high-frequency magnetic field generated from the antenna 7 is supplied to the inside of the vacuum container 2 by passing through the dielectric plate 6 and the multiple slits 5S in the metal plate 5. Since the multiple slits 5S are blocked by the dielectric plate 6, the vacuum state inside the vacuum container 2 is maintained.

[0022] In the plasma processing apparatus 1 of this embodiment 1, by forming a high-frequency window WR together with the metal plate 5 on which the slit 5S is formed, in addition to the dielectric plate 6, it is possible to increase the mechanical strength of the high-frequency window WR while ensuring the function of introducing a high-frequency magnetic field into the vacuum vessel 2. This reduces the risk of damage to the dielectric plate 6.

[0023] <Antenna 7> Antenna 7 is, for example, linearly shaped and made of a metal material such as copper. Antenna 7 is positioned vertically on the outside of the container body 2a, facing the high-frequency window WR. Furthermore, antenna 7 generates a high-frequency magnetic field using high-frequency power from the power supply 8, and introduces this high-frequency magnetic field into the container body 2a through the high-frequency window WR.

[0024] Specifically, one end of the antenna 7 is electrically connected to a power supply 8 via an impedance matching unit (not shown) having a matching circuit. The other end of the antenna 7 is electrically grounded via a variable capacitor (not shown). The power supply 8 supplies, for example, 13.56 MHz high-frequency power to one end of the antenna 7 via the impedance matching unit. In the plasma processing apparatus 1, a control unit (not shown) controls the supply of high-frequency power to the antenna 7 by changing the capacitance of the variable capacitor.

[0025] As a result, in the plasma processing apparatus 1 of this embodiment 1, the high-frequency magnetic field generated from the antenna 7 is introduced into the vacuum vessel 2 through the high-frequency window WR, and plasma can be generated inside the vacuum vessel 2. This plasma has a density distribution equivalent to a magnetic field distribution inversely proportional to the distance from the antenna 7, and also has a well-directed distribution that spreads inside the vacuum vessel 2. Thus, in the plasma processing apparatus 1 of this embodiment 1, a high-density plasma can be widely generated inside the vacuum vessel 2 to form the plasma processing region PA described later, and the workpiece W can be processed with high precision inside the plasma processing region PA.

[0026] <Applying mechanism SM> The application mechanism SM comprises a holder H provided on the turntable 3 to hold the workpiece W, and an electrode plate SM2 electrically connected to the holder H inside the vacuum container 2. The application mechanism SM also has a power supply SM1 provided outside the container body 2a, and applies a predetermined bias voltage from the power supply SM1 to the workpiece W located between the antenna 7 and the rotation axis 3b of the turntable 3 via the electrode plate SM2 and the holder H. The plasma processing area PA is the area where a predetermined plasma treatment is performed on the workpiece W. This plasma processing area PA is defined by the area to which the bias voltage from the electrode plate SM2 can be applied to the workpiece W, that is, the location where the electrode plate SM2 is installed and the area where the holder H and the electrode plate SM2 are in contact with each other. In the plasma processing apparatus 1 of this embodiment 1, a predetermined plasma treatment is performed on the workpiece W inside the plasma processing area PA while the bias voltage from the application mechanism SM is applied.

[0027] The power supply SM1 is configured using, for example, a DC power supply, a pulse power supply, or an AC power supply. In the application mechanism SM, the control unit is configured to change the bias voltage from the power supply SM1 according to the details of the plasma treatment on the workpiece W and the electron density of the plasma in the plasma treatment area PA, thereby ensuring that the plasma treatment is performed appropriately.

[0028] The electrode plate SM2 is formed, for example, in a semicircular shape and is installed inside the vacuum container 2 between the antenna 7 and the rotation axis 3b of the turntable 3. The electrode plate SM2 applies a bias voltage to the workpiece W located between the antenna 7 and the rotation axis 3b via the holder H. In other words, the application mechanism SM applies the bias voltage to the workpiece W only when the workpiece W held by the holder H is located in the vicinity of the high-frequency window WR and opposite the electrode plate SM2.

[0029] Furthermore, the dimensions of the electrode plate SM2 in the direction of rotation of the turntable 3 (i.e., along the arrow R1 in Figure 1) are set to a value within the range of 2 to 4 times the dimensions of the slit 5S in the same direction of rotation. In other words, in the plasma processing apparatus 1 of this embodiment 1, the plasma processing area PA inside the vacuum vessel 2 is set to correspond to the above dimensions of the electrode plate SM2. Also, inside the vacuum vessel 2, the areas where the electrode plate SM2 is not installed do not undergo the predetermined plasma processing on the workpiece W, and therefore function as a cooling area CA capable of cooling the workpiece W.

[0030] Furthermore, as described above, the electrode plate SM2 is in the rotational direction of the slit 5S. in Based on these dimensions, the configuration of this embodiment 1 allows for the reliable and easy application of a bias voltage to the workpiece W, and enables the construction of a compact plasma processing apparatus 1 that can perform plasma processing more appropriately.

[0031] Furthermore, if the dimension of the electrode plate SM2 in the rotational direction of the turntable 3 is set to a value less than twice the dimension of the slit 5S in the same rotational direction, it may not be possible to enlarge the plasma processing area PA, and thus it may not be possible to easily increase the number of workpieces W processed per unit time. Also, if the dimension of the electrode plate SM2 in the rotational direction of the turntable 3 is set to a value greater than four times the dimension of the slit 5S in the same rotational direction, it may become difficult to construct a compact plasma processing apparatus 1, as it may be necessary to increase the number of antennas 7 installed or enlarge the high-frequency window WR.

[0032] Furthermore, the application mechanism SM has a plurality of holders H provided at predetermined intervals along the circumference of the turntable 3a. Each of the plurality of holders H is for holding the workpiece W on the turntable 3a. In this embodiment 1, as described above, as the turntable 3a rotates, a bias voltage is applied from the electrode plate SM2 within the plasma processing area PA where the electrode plate SM2 is installed, allowing predetermined plasma processing to be performed sequentially on multiple workpieces W.

[0033] As shown in Figure 4, the holder H comprises cylindrical support members H1 and H2, and a cylindrical conductive member H3. The holder H also includes a holding member H4 for holding a spring H5 as an elastic member, and a roller H6 as a sliding member. The support members H1 and H2 are made of, for example, a dielectric material and are provided on the table body 3a of the turntable 3. Furthermore, the support member H1 is rotatably supported by the support member H2 while holding the workpiece W.

[0034] The spring H5 is configured to bias the roller H6 on the surface side of the electrode plate SM2. The spring H5 is held in an elastically deformable state by a retaining member H4, which is made of, for example, a dielectric material. The roller H6 is held rotatably by the retaining member H4 while being biased by the spring H5. The conductive member H3, the spring H5, and the roller H6 are made of metallic material and are electrically connected sequentially to form a bias voltage application path from the electrode plate SM2 to the workpiece W. As a result, the holder H is configured to ensure more uniform processing of the workpiece W.

[0035] The plasma processing apparatus 1 of this embodiment 1, configured as described above, comprises a vacuum vessel 2 for housing a workpiece W, a high-frequency window WR for introducing a high-frequency magnetic field into the vacuum vessel 2, and an antenna 7 provided opposite the high-frequency window WR for generating a high-frequency magnetic field. The plasma processing apparatus 1 also comprises a turntable 3 on which the workpiece W is placed and rotated, and an application mechanism SM for applying a predetermined bias voltage to the workpiece W. The application mechanism SM comprises a holder H provided on the turntable 3 for holding the workpiece W, and an electrode plate SM2 electrically connected to the holder H inside the vacuum vessel 2.

[0036] With the above configuration, this embodiment 1 can construct a plasma processing apparatus 1 that can process a workpiece W with high precision. Specifically, in this embodiment 1, the inside of the vacuum vessel 2 is defined as a plasma processing region PA by the electrode plate SM2, so that a high-density plasma can be used in this plasma processing region PA while applying a voltage to the workpiece W, thereby increasing the electron density of the plasma and increasing the film removal rate (processing rate) for the workpiece W. As a result, in this embodiment 1, the workpiece W can be processed with high precision. Furthermore, in this embodiment 1, as shown in Figures 1 and 2, a single plasma source having one antenna 7 and one high-frequency window WR can sequentially perform predetermined plasma processing on multiple workpieces W. As a result, in this embodiment 1, a low-cost plasma processing apparatus 1 can be constructed that can efficiently perform plasma processing on multiple workpieces W.

[0037] The effects of the plasma processing apparatus 1 of this embodiment 1 will be described in detail below with reference to Figures 5 and 6. Figure 5 is a graph showing an example of the relationship between the electron density of the plasma and the sheath thickness in the plasma processing apparatus 1. Figure 6 is a diagram illustrating an example of the relationship between the workpiece W and the sheath SA in the film removal process.

[0038] As shown in Figure 5, in the plasma processing apparatus 1 of this embodiment 1, for example, when the control unit controls the power supply 8 to change the power supplied to the antenna 7 (high-frequency power), the electron density of the plasma generated in the plasma processing region PA changes as shown on the horizontal axis of Figure 5. Also, in the plasma processing apparatus 1 of this embodiment 1, for example, when the control unit controls the power supply SM1 to change the bias voltage, the sheath thickness of the sheath SA (Figure 6) generated around the workpiece W in the plasma processing region PA changes according to the electron density of the plasma for each bias voltage. Here, the sheath SA is, as is well known, a shielding layer that is generated to surround the workpiece W by the bias voltage and inhibits the approach of plasma ions to the workpiece W.

[0039] Specifically, when the bias voltage is, for example, -100V, the sheath thickness changes according to the electron density of the plasma, as shown by curve 71 in Figure 5. Furthermore, when the bias voltage is, for example, -250V, the sheath thickness changes according to the electron density of the plasma, as shown by curve 72 in Figure 5. Also, when the bias voltage is, for example, -500V, the sheath thickness changes according to the electron density of the plasma, as shown by curve 73 in Figure 5. In other words, as is clear from curves 71-73 in Figure 5, the higher the electron density of the plasma in the plasma processing region PA, and the smaller the absolute value of the bias voltage applied to the workpiece W, the smaller the sheath thickness can be, allowing for more precise plasma processing of the workpiece W.

[0040] Furthermore, as shown in 601 of Figure 6, when the workpiece W is the drill described above, as shown in 602 and 603 of Figure 6, the sheath thickness around the workpiece W in a cross-sectional view differs depending on the electron density of the plasma. Specifically, when the electron density of the plasma is low, the thickness of the sheath SA increases, as shown in 602 of Figure 6. As a result, the plasma ions P1 are prevented from approaching the surface of the workpiece W by the relatively thick sheath SA. Consequently, when the electron density of the plasma is low and the sheath thickness is large, it becomes difficult to perform the defilm removal process uniformly on the workpiece W.

[0041] On the other hand, if the electron density of the plasma can be increased, as in the plasma processing apparatus 1 of this embodiment 1, the thickness of the sheath SA can be reduced compared to that shown in 602 of Figure 6, as shown in 603 of Figure 6. Therefore, in the plasma processing apparatus 1 of this embodiment 1, the plasma ions P1 are prevented from approaching the surface of the workpiece W by the relatively thin sheath SA. In other words, in the plasma processing apparatus 1 of this embodiment 1, the plasma ions P1 can approach the surface of the workpiece W more easily, enabling uniform film removal.

[0042] Furthermore, in the plasma processing apparatus 1 of this embodiment 1, a cooling region CA is set inside the vacuum vessel 2 where the workpiece W can be cooled without the predetermined plasma processing being performed. As a result, the plasma processing apparatus 1 of this embodiment 1 can suppress the temperature rise of the workpiece W due to plasma processing, and the temperature of the workpiece W can be easily lowered. As a result, the plasma processing apparatus 1 can significantly suppress the temperature rise of the workpiece W, and the occurrence of damage to the workpiece W can be significantly reduced.

[0043] Furthermore, in the plasma processing apparatus 1 of this embodiment 1, in the application mechanism SM, a plurality of holders H are provided on the turntable 3 at predetermined intervals, and the electrode plate SM2 is installed inside the vacuum container 2 between the antenna 7 and the rotation axis 3b of the turntable 3, and a bias voltage is applied to the workpiece W located between the antenna 7 and the rotation axis 3b via the holders H. In other words, the application mechanism SM applies a bias voltage to the workpiece W only when the workpiece W held by the holder H is located near the high-frequency window WR and in a position opposite the electrode plate SM2. As a result, the plasma processing apparatus 1 of this embodiment 1 can perform plasma processing more appropriately on each of the plurality of workpieces W.

[0044] [Embodiment 2] Embodiment 2 of this disclosure will be described in detail with reference to Figure 7. Figure 7 is a cross-sectional view showing the main components of the plasma processing apparatus 1 according to Embodiment 2 of this disclosure. For the sake of convenience of explanation, components having the same function as those described in Embodiment 1 will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0045] The main difference between this second embodiment and the first embodiment is the addition of a contact member 2e that rotates the support member H1 in accordance with the rotation of the turntable 3.

[0046] As shown in Figure 7, in the plasma processing apparatus 1 of this second embodiment, a contact member 2e is provided on the inner wall surface 2b of the vacuum vessel 2. This contact member 2e is constructed in a rod shape using, for example, a metal material. The contact member 2e is attached to the inner wall surface 2b such that one end protrudes from the inner wall surface 2b into the interior side of the vessel body 2a. The other end (protruding end) of the contact member 2e is configured to be able to contact the support member H1 of the holder H.

[0047] In the plasma processing apparatus 1 of this second embodiment, when the support member H1 of the holder H comes into contact with the other end of the contact member 2e in accordance with the rotation of the turntable 3, the support member H1 is pressed (kicked) against the other end of the contact member 2e in accordance with the rotation. As a result, the holder H rotates (rotates on its own axis) with the support member H1 supporting the workpiece W in accordance with the rotation of the turntable 3.

[0048] With the above configuration, the plasma processing apparatus 1 of this second embodiment provides the same effects as that of the first embodiment. Furthermore, in the plasma processing apparatus 1 of this second embodiment, the support member H1 of the holder H is rotated by contact with the contact member 2e, so that the workpiece W can be processed more uniformly and reliably.

[0049] [Embodiment 3] Embodiment 3 of this disclosure will be described in detail with reference to Figures 8 and 9. Figure 8 is a diagram illustrating the main components of the plasma processing apparatus 1 according to Embodiment 3 of this disclosure. Figure 9 is a cross-sectional view showing the main components of the plasma processing apparatus 1 shown in Figure 8. For the sake of convenience of explanation, components having the same function as those described in Embodiment 1 above will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0050] The main difference between this third embodiment and the first embodiment is that a turntable 13 is provided, having two table bodies 13a1 and 13a2 arranged parallel to each other along the extension direction of the antenna 7, and multiple workpieces W are arranged along the extension direction.

[0051] As shown in Figures 8 and 9, the plasma processing apparatus 1 of this embodiment 3 is provided with a turntable 13 comprising, for example, two opposing table bodies 13a1 and 13a2 arranged in upper and lower stages along the extension direction of the antenna 7. Similar to the turntable 3 of embodiment 1, this turntable 13 is constructed using, for example, a metal material and is equipped with a rotating shaft 13b connected to the center of each of the table bodies 13a1 and 13a2. This rotating shaft 13b is rotatably and airtightly attached to the lower lid 2d of the vacuum vessel 2, and a drive mechanism (not shown) is connected to the rotating shaft 13b. In the turntable 13, the table bodies 13a1 and 13a2 are configured to rotate in the R1 direction inside the vacuum vessel 2 as the rotating shaft 13b rotates in the R1 direction shown in Figure 8.

[0052] Multiple holders H for holding workpieces W are provided on the table body 13a1 at predetermined intervals around the circumferential direction of the table body 13a1, such that the workpieces W face the table body 13a2. Multiple holders H for holding workpieces W are provided on the table body 13a2 at predetermined intervals around the circumferential direction of the table body 13a2, such that the workpieces W face the table body 13a1. In other words, in the plasma processing apparatus 1 of this embodiment 3, multiple workpieces W are arranged in two stages, upper and lower, facing each other inside the vacuum container 2.

[0053] Furthermore, in the application mechanism SM, for example, an electrode plate SM3, which is configured to have the same shape as electrode plate SM2, is installed on the upper cover 2c side of the table body 13a1. The application mechanism SM is configured to apply a bias voltage from the power supply SM1 to the workpiece W held on the table body 13a2 via electrode plate SM2 and holder H, and to apply a bias voltage from the power supply SM1 to the workpiece W held on the table body 13a1 via electrode plate SM3 and holder H.

[0054] With the above configuration, the plasma processing apparatus 1 of this third embodiment achieves the same effects as that of the first embodiment. Furthermore, in the plasma processing apparatus 1 of this third embodiment, multiple workpieces W are arranged in two stages, upper and lower, facing each other inside the vacuum container 2, so the number of workpieces processed per unit time can be easily increased.

[0055] In the above description, we have described a case in which multiple workpieces W are provided, for example, two table bodies 13a1 and 13a2, along the extension direction of the antenna 7. However, the disclosure is not limited thereto, and for example, in a single table body provided with a holder H, a support member is provided above the holder H to support the workpieces W, and the workpieces W are held in two stages, upper and lower.

[0056] [Embodiment 4] Embodiment 4 of this disclosure will be described in detail with reference to Figures 10 and 11. Figure 10 is a diagram illustrating the main components of the plasma processing apparatus 1 according to Embodiment 4 of this disclosure. Figure 11 is a top view showing the main components of the plasma processing apparatus 1 shown in Figure 10. For the sake of convenience of explanation, components having the same function as those described in Embodiment 1 above will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0057] The main difference between this embodiment 4 and the above-described embodiment 1 is the addition of a cooling mechanism CM that cools the workpiece W using a cooling plate CM1.

[0058] As shown in Figures 10 and 11, in the plasma processing apparatus 1 of this embodiment 4, a cooling mechanism CM is provided in the cooling region CA inside the vacuum vessel 2. The cooling mechanism CM comprises, for example, a cooling plate CM1 formed in an arc shape using a metal material, and a pipe CM2 provided on the inner wall surface 2b side of the container body 2a of the cooling plate CM1 for circulating a cooling medium such as water.

[0059] Specifically, the cooling plate CM1 is positioned inside the vacuum vessel 2 in the cooling region CA opposite the antenna 7 with respect to the rotation axis 3b of the turntable 3. The cooling plate CM1 is also installed inside the vessel body 2a such that its surface is in contact with the holder H. The piping CM2 is kept airtight with respect to the bottom lid 2d and is led out of the vacuum vessel 2 to a circulation mechanism (not shown) that circulates the cooling medium.

[0060] With the above configuration, the plasma processing apparatus 1 of this embodiment 4 achieves the same effects as that of embodiment 1. Furthermore, the plasma processing apparatus 1 of this embodiment 4 is provided with a cooling mechanism CM having a cooling plate CM1 for cooling the workpiece W, so that the workpiece W can be cooled at a faster speed, and the processing rate can be faster than that of the workpiece W.

[0061] In other words, in the plasma processing apparatus 1 of this embodiment 4, the cooling performance for the workpiece W is improved, so in plasma processing (film removal processing), the ion current from the plasma to the workpiece W can be increased, and the film removal rate can be increased.

[0062] Furthermore, in the plasma processing apparatus 1 of this embodiment 4, the workpiece W can be cooled at a faster speed, thereby suppressing the temperature rise in the workpiece W associated with plasma processing and significantly reducing damage to the workpiece W caused by thermal load due to the temperature rise. Moreover, in this embodiment 4, the cooling plate CM1 cools the workpiece W by contacting the holder H without directly contacting the workpiece W, so the workpiece W can be cooled reliably without damaging it.

[0063] In the descriptions of Embodiments 2 and 4 above, a configuration was described in which the support member H1 of the holder H is rotated (rotated on its own axis) by contact with the contact member 2e and the cooling plate CM1, respectively. However, this disclosure is not limited thereto, and for example, a rotation mechanism such as a gear may be provided that is connected to the holder H and rotates the support member H1 of the holder H using rotational force from a drive mechanism that drives the rotation axis 3b of the turntable 3.

[0064] [Embodiment 5] Embodiment 5 of this disclosure will be described in detail with reference to Figures 12 and 13. Figure 12 is a diagram illustrating the main components of the plasma processing apparatus 1 according to Embodiment 5 of this disclosure. Figure 13 is a diagram illustrating an example of the configuration of the electrode plate SM4 and holder H of the plasma processing apparatus 1 shown in Figure 12. For the sake of convenience of explanation, components having the same function as those described in Embodiment 1 above will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0065] The main difference between this embodiment 5 and the above-described embodiment 1 is that the disc-shaped electrode plate SM4 is provided with a conductive portion SM4A and an insulating portion SM4B.

[0066] As shown in Figures 12 and 13, in the plasma processing apparatus 1 of this embodiment 5, the application mechanism SM includes an electrode plate SM4 fixed to the container body 2a on the lower lid 2d side of the table body 3a of the turntable 3. This electrode plate SM4 has a hole (not shown) through which a rotating shaft 3b is rotatably inserted, and includes, for example, a conductive portion SM4A made of the same electrode material as the electrode plate SM1, and an insulating portion SM4B made of an insulating material such as a fluororesin such as Teflon® or ceramics.

[0067] Furthermore, the insulating portion SM4B is assembled to the conductive portion SM4A so as to be on the same plane as the conductive portion SM4A. In the application mechanism SM, when the roller H6 of the holder H slides on the surface of the conductive portion SM4A, the bias voltage from the power supply SM1 is applied to the workpiece W. On the other hand, when the roller H6 of the holder H slides on the surface of the insulating portion SM4B, the bias voltage from the power supply SM1 is not applied to the workpiece W. In other words, in this embodiment 5, the plasma processing area PA can be defined by defining the size of the conductive portion SM4A in the electrode plate SM4.

[0068] With the above configuration, the plasma processing apparatus 1 of this embodiment 5 achieves the same effects as that of embodiment 1. Furthermore, in the plasma processing apparatus 1 of this embodiment 5, the roller H6 of the holder H constantly slides on the surface of the electrode plate SM4, stabilizing the operation of the roller H6 and ensuring a stable holding state of the workpiece W by the holder H.

[0069] [Embodiment 6] Embodiment 6 of this disclosure will be described in detail with reference to Figures 14 to 16. Figure 14 is a diagram illustrating the main components of the plasma processing apparatus 1 according to Embodiment 6 of this disclosure. Figure 15 is a cross-sectional view showing the main components of the plasma processing apparatus 1 shown in Figure 14. Figure 16 is a diagram illustrating an example of the configuration of the holder H shown in Figure 14. For the sake of convenience of explanation, components having the same function as those described in Embodiment 1 above will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0070] The main difference between this embodiment 6 and the above-described embodiment 1 is that the application mechanism SM uses an arc-shaped electrode plate SM5.

[0071] As shown in Figures 15 and 16, in the plasma processing apparatus 1 of this embodiment 6, the application mechanism SM includes an electrode plate SM5 fixed to the container body 2a on the lower lid 2d side of the table body 3a of the turntable 3. This electrode plate SM5 is configured, for example, in an arc shape along the outer circumferential surface of the table body 3a.

[0072] Furthermore, in the application mechanism SM, the roller H6 of the holder H slides along the inner circumferential surface of the electrode plate SM5, as shown in Figure 16. In the application mechanism SM, when the roller H6 of the holder H slides along the inner circumferential surface of the electrode plate SM5, a bias voltage from the power supply SM1 is applied to the workpiece W.

[0073] With the above configuration, the plasma processing apparatus 1 of this embodiment 6 achieves the same effects as that of embodiment 1.

[0074] 〔summary〕 To solve the above problems, a plasma processing apparatus according to a first aspect of the present disclosure comprises a vacuum vessel for housing an object to be processed, a high-frequency window for introducing a high-frequency magnetic field for generating plasma into the vacuum vessel, an antenna provided on the outside of the vacuum vessel facing the high-frequency window and generating the high-frequency magnetic field, a turntable that rotates inside the vacuum vessel, and an application mechanism for applying a predetermined bias voltage to the object to be processed, wherein the application mechanism comprises a holder provided on the turntable for holding the object to be processed, and an electrode plate electrically connected to the holder inside the vacuum vessel, and applies the bias voltage from the electrode plate to the object to be processed located between the antenna and the rotation axis of the turntable.

[0075] According to the above configuration, a plasma processing apparatus capable of processing objects with high precision can be provided.

[0076] A second aspect of the present disclosure is a plasma processing apparatus according to the first aspect, wherein in the application mechanism, a plurality of holders are provided on the turntable at predetermined intervals, and the electrode plate is installed between the antenna and the rotation axis of the turntable.

[0077] With the above configuration, plasma treatment can be performed more appropriately on each of the multiple objects to be treated.

[0078] A third aspect of the present disclosure is a plasma processing apparatus according to the first or second aspect, wherein the application mechanism may apply the bias voltage to the workpiece held in the holder only when the workpiece is located near the high-frequency window and in a position opposite the electrode plate.

[0079] According to the above configuration, plasma treatment can be performed more appropriately on the object to be treated.

[0080] A fourth aspect of the present disclosure is a plasma processing apparatus according to any of the first to third aspects, wherein the high-frequency window comprises a metal plate having a plurality of slits and a dielectric plate provided on the antenna side of the metal plate so as to cover the plurality of slits, and the dimension of the electrode plate in the rotational direction of the turntable may be within the range of 2 to 4 times the dimension of the slits in the rotational direction.

[0081] According to the above configuration, a compact plasma processing apparatus can be constructed that reliably and easily applies a bias voltage to the workpiece, and that can perform plasma processing more appropriately.

[0082] A fifth aspect of the present disclosure is a plasma processing apparatus according to any of the first to fourth aspects, wherein the holder may include a support member provided on the turntable and rotatably supporting the workpiece, a conductive member electrically connected to the workpiece supported by the support member, a sliding member that slides along the surface of the electrode plate, and an elastic member provided between the conductive member and the sliding member to bias the sliding member toward the surface of the electrode plate.

[0083] With the above configuration, more uniform processing of the workpiece can be reliably achieved.

[0084] A sixth aspect of the present disclosure is a plasma processing apparatus according to the fifth aspect, wherein a contact member may be provided inside the vacuum vessel that contacts the support member of the holder and rotates the support member in accordance with the rotation of the turntable.

[0085] According to the above configuration, more uniform processing of the material to be processed can be achieved more reliably.

[0086] A seventh aspect of the present disclosure is a plasma processing apparatus according to any of the first to sixth aspects, which may be provided with a cooling mechanism that includes a cooling plate located inside the vacuum vessel in a region opposite to the antenna with respect to the rotation axis of the turntable, and uses the cooling plate to cool the object to be processed.

[0087] With the above configuration, the workpiece can be cooled more quickly, thus enabling a faster processing rate.

[0088] A seventh aspect of this disclosure is the plasma processing apparatus of the eighth aspect, wherein the cooling plate may be in contact with the holder.

[0089] With the above configuration, the object being processed can be cooled reliably without damaging it.

[0090] A ninth aspect of the present disclosure is a plasma processing apparatus according to any of the first to eighth aspects, wherein a plurality of the objects to be processed may be arranged inside the vacuum vessel along the extension direction in which the antenna extends.

[0091] With the above configuration, the number of items processed per unit time can be easily increased.

[0092] This disclosure is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of this disclosure. [Explanation of Symbols]

[0093] 1. Plasma processing equipment 2 Vacuum container 2e Contact member 3 Turntables 3b Rotation axis 5. Metal plate (high-frequency window) 5S Slit 6. Dielectric plate (high-frequency window) 7 Antennas W Work (object to be processed) SM application mechanism SM1 power supply SM2, SM3, SM4, SM5 electrode plate H holder H1, H2 support members H3 Conductive Member H5 Spring (Elastic component) H6 Roller (Sliding Member) CM cooling mechanism CM1 Cooling plate WR High-Frequency Window

Claims

1. A vacuum container that houses the object to be processed, A high-frequency window is used to introduce a high-frequency magnetic field that generates plasma inside the vacuum container into the vacuum container, An antenna is provided on the outside of the vacuum vessel so as to face the high-frequency window and generates the high-frequency magnetic field, A turntable that rotates inside the vacuum container, The system comprises an application mechanism for applying a predetermined bias voltage to the workpiece, The aforementioned application mechanism is A holder provided on the turntable for holding the object to be processed, The vacuum container includes an electrode plate electrically connected to the holder, A plasma processing apparatus that applies the bias voltage from the electrode plate to the object to be processed, which is located between the antenna and the rotation axis of the turntable.

2. In the aforementioned application mechanism, Multiple holders are provided on the turntable at predetermined intervals, and The plasma processing apparatus according to claim 1, wherein the electrode plate is installed between the antenna and the rotation axis of the turntable.

3. The plasma processing apparatus according to claim 1, wherein the application mechanism applies the bias voltage to the workpiece held in the holder only when the workpiece is located near the high-frequency window and in a position opposite the electrode plate.

4. The high-frequency window comprises a metal plate having a plurality of slits, and a dielectric plate provided on the antenna side of the metal plate so as to cover the plurality of slits. The plasma processing apparatus according to claim 1, wherein the dimension of the electrode plate in the rotational direction of the turntable is within the range of two to four times the dimension of the slit in the rotational direction.

5. The aforementioned holder is A support member provided on the turntable and which rotatably supports the object to be processed, A conductive member electrically connected to the workpiece supported by the support member, A sliding member that slides on the surface of the electrode plate, The plasma processing apparatus according to claim 1, further comprising an elastic member provided between the conductive member and the sliding member, which biases the sliding member toward the surface side of the electrode plate.

6. The plasma processing apparatus according to claim 5, wherein a contact member is provided inside the vacuum vessel that contacts the support member of the holder and rotates the support member in accordance with the rotation of the turntable.

7. The plasma processing apparatus according to claim 1, further comprising a cooling plate located inside the vacuum vessel in a region opposite to the antenna with respect to the rotation axis of the turntable, and a cooling mechanism for cooling the object to be processed using the cooling plate.

8. The plasma processing apparatus according to claim 7, wherein the cooling plate is in contact with the holder.

9. Plasma processing apparatus according to any one of claims 1 to 8, wherein a plurality of objects to be processed are arranged inside the vacuum vessel along the extension direction in which the antenna extends.

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