Electrostatic chuck device

Abstract

To provide an electrostatic chuck device including a ceramic film with high withstand voltage and high adhesion.SOLUTION: The electrostatic chuck device includes a base 110, an adhesive layer 310, an insulating organic film 320, an electrode 130, an adhesive layer 410, an insulating organic film 420, a ceramic layer 120 containing a resin binder, and a ceramic film 140, which are stacked on one another. The ceramic film 140 contains ceramic particles and a metal oxide. At least a portion of the ceramic particles are bonded to each other via the metal oxide.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to an electrostatic chuck device.

Background Art

[0002] When manufacturing a semiconductor integrated circuit using a semiconductor wafer, or when manufacturing a liquid crystal panel using an insulating substrate such as a glass substrate or a film, it is necessary to adsorb and hold a base material such as a semiconductor wafer, a glass substrate, or an insulating substrate at a predetermined position. Therefore, in order to adsorb and hold these base materials, a mechanical chuck by a mechanical method, a vacuum chuck, etc. have been used. However, these holding methods have problems such as being difficult to hold the base material (adsorbed object) uniformly, not being able to be used in a vacuum, and the temperature of the base material surface rising too much. Therefore, in recent years, an electrostatic chuck device that can solve these problems has been used for holding the adsorbed object.

[0003] An electrostatic chuck device mainly includes a conductive support member serving as an internal electrode and a dielectric layer made of a dielectric material covering it. By this main part, the adsorbed object can be adsorbed. When a voltage is applied to the internal electrode in the electrostatic chuck device to generate a potential difference between the adsorbed object and the conductive support member (internal electrode), an electrostatic attractive force is generated in the dielectric layer. As a result, the adsorbed object is supported almost flatly with respect to the conductive support member.

[0004] As a conventional electrostatic chuck device, for example, a device in which a ceramic film is formed by spraying on a substrate made of a ceramic sintered body is known (see, for example, Patent Document 1). Also, as an electrostatic chuck device, for example, an electrostatic chuck device in which a low-resistance ceramic sprayed film and a high-resistance ceramic sprayed film are laminated in order on a substrate made of a ceramic sintered body is known (see, for example, Patent Document 2). Furthermore, as an electrostatic chuck device, for example, an electrostatic chuck device in which a ceramic sprayed film is formed on a polyimide resin film is known (see, for example, Patent Document 3). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2001-284328 [Patent Document 2] Japanese Patent Publication No. 2006-60040 [Patent Document 3] Japanese Patent Application Publication No. 7-335732 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Conventional electrostatic chuck devices form the ceramic layer by thermal spraying, which results in voids in the ceramic layer, leading to problems such as low voltage resistance and poor adhesion.

[0007] The present invention has been made in view of the above circumstances, and aims to provide an electrostatic chuck device equipped with a ceramic layer that has high voltage resistance and high adhesion. [Means for solving the problem]

[0008] The present invention has the following aspects. [1] An electrostatic chuck device having a ceramic film and a ceramic layer containing a resin binder, wherein the ceramic film contains ceramic particles and a metal oxide, and at least a portion of the spaces between the ceramic particles are bonded via the metal oxide. [2] The electrostatic chuck device according to [1], characterized in that the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. [3] The electrostatic chuck device according to [1] or [2], characterized in that the average primary particle diameter of the ceramic particles is 0.1 μm or more and 50 μm or less. [4] The electrostatic chuck device according to any one of [1] to [3], characterized in that the metal oxide is a metal oxide obtained by heat treatment of an organometallic compound in which the organic component is decomposed and removed and the metal constituting the organometallic compound is oxidized. [5] The electrostatic chuck device according to [4], characterized in that the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide an electrostatic chuck device equipped with a ceramic layer that has high voltage resistance and high adhesion. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic cross-sectional view showing a ceramic film according to the present invention. [Figure 2] This is a schematic cross-sectional view showing an electrostatic chuck device according to one embodiment of the present invention. [Figure 3] This is a schematic cross-sectional view showing an electrostatic chuck device according to one embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view showing an electrostatic chuck device according to one embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing an electrostatic chuck device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0011] The ceramic film according to the present invention will be described below with reference to the drawings. Note that, for convenience, the drawings used in the following description show enlarged versions of characteristic parts, and the dimensional ratios of each component may differ from those in reality. Furthermore, the materials, dimensions, etc., exemplified in the following description are examples only, and the present invention is not limited to them; they can be modified as appropriate without altering the essence of the invention.

[0012] [Ceramic film] While referring to FIG. 1, the ceramic film according to the present invention will be described. FIG. 1 is a schematic cross-sectional view showing a ceramic film. The ceramic film 10 shown in FIG. 1 is composed of a ceramic composition containing a plurality of ceramic particles 11 and a plurality of metal oxides 12. The ceramic film 10 is formed, for example, on the surface 20a of an object to be coated 20 such as an electrode constituting an electrostatic chuck device. In the ceramic film 10 of the present embodiment, at least a part of the ceramic particles 11 is bonded via the metal oxide 12. That is, as shown in FIG. 1, one ceramic particle 11 (11A) included in the ceramic film 10 is bonded to another ceramic particle 11 (11B) via the metal oxide 12. Also, one ceramic particle 11 (11C) included in the ceramic film 10 is bonded to another ceramic particle 11 (11D) via the metal oxide 12 (12A) and is bonded to another ceramic particle 11 (11E) via the metal oxide 12 (12B). Similarly, one ceramic particle 11 may be in contact with three or more metal oxides 12 and bonded to three or more other ceramic particles 11 via each metal oxide 12. Also, the ceramic particles 21 may be in contact with other ceramic particles 21.

[0013] The thickness of the ceramic film 10 is preferably 1 μm or more and 200 μm or less, more preferably 5 μm or more and 80 μm or less, and even more preferably 10 μm or more and 50 μm or less. When the thickness of the ceramic film 10 is at least the lower limit value, it exhibits sufficient plasma resistance and voltage resistance. When the thickness of the ceramic film 10 is at most the upper limit value, sufficient adsorption force is generated. [[ID=**10**]]

[0014] [[ID=**11**]] [[ID=**12**]]The arithmetic mean roughness (Ra) of the surface 10a of the ceramic film 10 is preferably 0.05 μm or more and 0.5 μm or less. When the arithmetic mean roughness (Ra) of the surface 10a of the ceramic film 10 is within the above range, when the ceramic film 10 is applied to an electrostatic chuck device, the object to be adsorbed can be adsorbed well. When the arithmetic mean roughness (Ra) of the surface 10a of the ceramic film 10 increases, the contact area between the object to be adsorbed and the ceramic film 10 becomes smaller, so the adsorption force also becomes smaller.

[0015] The arithmetic mean roughness (Ra) of the surface 10a of the ceramic film 10 can be measured in accordance with the method specified in JIS B0601 - 1994.

[0016] The ratio of the content of the ceramic particles 11 and the metal oxide 12 in the ceramic film 10 is preferably 80:20 to 98:2, more preferably 90:10 to 96:4 in terms of mass, with the ceramic particles 11: metal oxide 12. When the ratio of the content of the ceramic particles 11 and the metal oxide 12 is within the above range, the ceramic particles 11 can be well bonded with the metal oxide 12.

[0017] <Ceramic particles> The ceramic particles 11 are not particularly limited. Examples of the shape of the ceramic particles 11 include spherical, true spherical, amorphous, needle - shaped, fibrous, plate - shaped, etc. The ceramic particles 11 of these shapes may be used alone or in combination of two or more.

[0018] Examples of the material of the ceramic particles 11 include ceramic particles mainly composed of oxide - based ceramics, non - oxide - based ceramics, and composite ceramics thereof, etc.

[0019] Examples of the oxide - based ceramics include alumina (aluminum oxide, Al2O3), zirconia (zirconium oxide, ZrO2), yttria (yttrium oxide, Y2O3), talc (hydrous magnesium silicate, Mg3Si4O 10 (OH) 10), hematite (iron(III) oxide, Fe2O3), chromia (chromium(III) oxide, Cr2O3), titania (titanium(IV) oxide, Ti2O), magnesia (magnesium oxide, MgO), silica (silicon dioxide, SiO2), calcia (calcium oxide, CaO), ceria (cerium(IV) oxide, CeO2), tin oxide (SnO2), zinc oxide (ZnO), steatite (magnesium metasilicate, MgO·SiO2), co Examples include -dierite (2MgO·2Al2O3·5SiO2), mullite (3Al2O3·2SiO2), ferrite (MnFe2O4), spinel (MgAl2O4), zircon (ZrSiO4), barium titanate (BaTiO3), lead titanate (PbTiO3), forsterite (Mg2SiO4), phosphorus-doped tin oxide (PTO), antimond-doped tin oxide (ATO), tin-doped indium oxide (ITO), etc. Oxide ceramics may be used individually or in combination of two or more types.

[0020] Examples of non-oxide ceramics include nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, and phosphate compounds. Examples of nitride ceramics include boron nitride (BN), titanium nitride (TiN), silicon nitride (Si3N4), gallium nitride (GaN), aluminum nitride (AlN), and carbon nitride (CN). x Examples include ), SiAlON (Si3N4-AlN-Al2O3 solid solution), etc. Examples of carbide ceramics include tungsten carbide (WC), chromium carbide (CrC), vanadium carbide (VC), niobium carbide (NbC), molybdenum carbide (MoC), tantalum carbide (TaC), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), silicon carbide (SiC), and boron carbide (B4C). Examples of boride ceramics include molybdenum boride (MoB), chromium boride (CrB2), hafnium boride (HfB2), zirconium boride (ZrB2), tantalum boride (TaB2), and titanium boride (TiB2). Examples of silicified ceramics include zirconium oxide silicate, hafnium oxide silicate, titanium oxide silicate, lanthanum oxide silicate, yttrium oxide silicate, titanium oxide silicate, tantalum oxide silicate, and tantalum oxynitride silicate. Examples of phosphate compounds include hydroxyapatite and calcium phosphate. Non-oxide ceramics may be used individually or in combination of two or more types. That's fine.

[0021] The ceramic particles 11 are preferably at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. Plasma resistance is improved when the ceramic particles 11 are at least one compound selected from the above group.

[0022] The average primary particle diameter of the ceramic particles 11 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 1 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle diameter of the ceramic particles 11 is within the above range, the voids in the ceramic film 10 are reduced, and the dielectric strength of the ceramic film 10 is improved.

[0023] The average primary particle diameter of the ceramic particles 11 can be measured using the laser diffraction / scattering method.

[0024] The content of ceramic particles 11 in the ceramic film 10 is preferably 80% to 98% by mass, and more preferably 90% to 96% by mass, of the total mass of the ceramic film 10. If the content of ceramic particles 11 is below the lower limit, the amount of ceramic particles is small, making it impossible to secure the predetermined film thickness, and the metal oxide ratio becomes large, leading to increased shrinkage during heat treatment and making cracking more likely. If the content of ceramic particles 11 exceeds the upper limit, the metal oxide ratio becomes small, making it difficult to bond the ceramic particles 11 together and thus difficult to secure the strength of the film.

[0025] <Metal oxides> Metal oxide 12 is a metal oxide obtained by heat treatment of an organometallic compound, in which the organic components are decomposed and removed, and the metal constituting the organometallic compound is oxidized. Examples of metal oxides 12 include oxides of gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum. Specific examples of metal oxides 12 include aluminum oxide, yttrium oxide, magnesium oxide, nickel oxide, and zinc oxide. The metal oxide 12 may be used alone or in combination of two or more types.

[0026] The metal oxide 12 is preferably at least one selected from the group consisting of aluminum oxide, yttrium oxide, and magnesium oxide. That is, the metal oxide 12 is preferably alumina (aluminum oxide, Al2O3), yttria (yttrium oxide, Y2O3), or magnesia (magnesium oxide, MgO). Plasma resistance is further improved when the metal oxide 12 is yttria (yttrium oxide, Y2O3) or magnesia (magnesium oxide, MgO).

[0027] The content of metal oxide 12 in the ceramic film 10 is preferably 2% by mass or more and 20% by mass or less, and more preferably 4% by mass or more and 10% by mass or less, based on 100% by mass of the total mass of the ceramic film 10. If the content of metal oxide 12 is below the lower limit, bonding between ceramic particles will not be possible, making it difficult to ensure the strength of the film. If the content of metal oxide 12 exceeds the upper limit, shrinkage during drying will increase, making the film prone to defects such as cracks.

[0028] The ceramic film 10 may contain components other than the ceramic particles 11 and the metal oxide 12. Examples of components other than the ceramic particles 11 and the metal oxide 12 include resins. Including resins can improve film strength and dielectric strength.

[0029] According to the ceramic film 10, the dense layer formed by the metal oxide prevents the ceramic layer containing the resin binder from degrading due to plasma.

[0030] [Method for manufacturing ceramic films] A method for manufacturing a ceramic film comprises the steps of applying a coating containing ceramic particles and metal resinate to an object to be coated to form a coating film (hereinafter referred to as the "coating step") and heating the coating film (hereinafter referred to as the "heating step"). The method for manufacturing the ceramic film of this embodiment will be described below with reference to Figure 1.

[0031] "The process of preparing paint (paint preparation process)" A method for manufacturing a ceramic film may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate. The above-mentioned ceramic particles are used.

[0032] The ceramic particle content in the paint is preferably 20% to 80% by mass, and more preferably 40% to 70% by mass, based on 100% by mass of the total mass of the paint. If the ceramic particle content is below the lower limit, the film strength will be low, leading to film chipping and a higher likelihood of particle generation. If the ceramic particle content exceeds the upper limit, the viscosity of the paint will increase, making application difficult.

[0033] The metal resin content in the paint is preferably 20% to 80% by mass, and more preferably 30% to 60% by mass, based on 100% by mass of the total mass of the paint. If the metal resin content is below the lower limit, the viscosity of the paint will increase, making application difficult. If the metal resin content exceeds the upper limit, bulk will form in the paint film, reducing its strength. This makes the paint film more prone to chipping and can easily cause particle generation.

[0034] The ratio of ceramic particles to metal resinate in the paint is preferably 2:8 to 8:2 by mass, and more preferably 4:6 to 6:4. When the ratio of ceramic particles to metal resinate is within the above range, the ceramic particles can be bonded together with metal oxides.

[0035] <Metal Resinate> Metal resinates are liquid or paste-like substances containing organometallic compounds. Through heat treatment, the organic components of the metal resinate are oxidized and removed, while the metals constituting the organometallic compounds are oxidized, producing high-purity metal oxides. The resulting metal oxides form extremely thin metal films. Using metal resinates, for example, metal films with a thickness of approximately 0.1 μm to 0.6 μm can be obtained. These metal films bind at least some of the ceramic particles together, forming a ceramic film.

[0036] Metal resinates are synthesized by reacting halides, nitrates, acetates, or oxides of the following metal components with polynuclear fatty acids such as carboxylic acids and abietic acid, or gum rosin mainly composed of abietic acid. Aliphatic carboxylic acids, cyclic aliphatic carboxylic acids, aromatic carboxylic acids, etc., are used as carboxylic acids.

[0037] Examples of metallic components include gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum. The metal component may be used individually or in combination of two or more types.

[0038] <Solvent> It is preferable to mix a solvent with the above-mentioned paint. Examples of solvents include alcohols, ketones, esters, hydrocarbons, ethers, and the like. Examples of alcohols include methanol, ethanol, propanol, and butanol. Examples of ketones include methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone. Examples of esters include ethyl acetate, propyl acetate, and butyl acetate. Examples of hydrocarbons include toluene and xylene. Examples of ethers include methyl cellosolve, ethyl cellosolve, butyl cellosolve, and tetrahydrofuran.

[0039] <Other Components> The above paint may contain components other than ceramic particles, metal resinate, and solvent. Examples of components other than ceramic particles, metal resinate, and solvent include dispersants and surfactants.

[0040] Methods for preparing paints include, for example, stirring and mixing ceramic particles, metal resinate, and solvent. Mixing methods include, for example, using a stirrer such as a rotary-orbiting stirrer, homogenizer, high-pressure jet mill, or ultrasonic device.

[0041] "Coating process" In the coating process, the above-mentioned paint is applied to the object to be coated (such as the surface of the object to be coated), such as electrodes that constitute the electrostatic chuck device, to form a coating film. In this embodiment, the above-mentioned paint is applied to the surface 20a of the object to be coated 20, such as electrodes, to form a coating film.

[0042] As a method for applying the paint to the object to be coated 20, for example, a coating method using coating equipment such as a gravure coater, roll coater, blade coater, air knife coater, rod coater, or spray coater, or a printing method such as dip coating, offset printing, or screen printing may be used.

[0043] The thickness of the coating film is preferably 1 μm or more and 200 μm or less, and more preferably 10 μm or more and 50 μm or less. If the thickness of the coating film is equal to or greater than the lower limit, the ceramic film obtained through the heating process exhibits sufficient plasma resistance and voltage resistance. If the thickness of the coating film is equal to or less than the upper limit, the ceramic film obtained through the heating process generates sufficient adsorption force.

[0044] "Heating process" In the heating step, the coating film formed on the workpiece 20 in the coating step is heated. As a result, a ceramic film 10 containing the aforementioned ceramic particles 11 and metal oxide 12 is formed on the surface 20a of the workpiece 20.

[0045] Heating methods for coating films include thermal heating, plasma heating, infrared heating, and lamp heating. By adding ultraviolet irradiation to these heating methods, organic matter can be removed at lower temperatures, and a metal oxide film can be obtained.

[0046] The heating temperature and heating time for the coating film are as follows, for example: The coating film is heated at 100°C to 150°C for 1 minute to 10 minutes to dry and remove the solvent contained in the coating film. Then, the coating film is heated at 500°C to 700°C for 30 minutes to 2 hours to obtain a ceramic film. By making the organic matter in the resin more easily decomposed by ultraviolet irradiation, the heat treatment can also be performed at a lower temperature (below 400°C).

[0047] Furthermore, the method for manufacturing the ceramic film may include a polishing step in which the surface (the surface not in contact with the coated object 20) 10a of the ceramic 10 obtained after the heating step is polished. By polishing the surface 10a of the ceramic film 10 to within the range of the above-mentioned arithmetic mean roughness (Ra) through a polishing process, the adsorption force of the ceramic film 10 can be improved.

[0048] The method for manufacturing a ceramic film according to this embodiment makes it possible to provide a ceramic film with high voltage resistance and high adhesion.

[0049] [Electrostatic Chuck Device] An electrostatic chuck device according to one embodiment of the present invention has at least one layer of ceramic film.

[0050] An electrostatic chuck device according to one embodiment of the present invention will be described with reference to Figure 2. Figure 2 is a schematic cross-sectional view showing an electrostatic chuck device according to this embodiment. The electrostatic chuck device 100 of this embodiment, shown in Figure 2, comprises a base 110, a ceramic layer 120, an electrode 130, and a ceramic film 140. The electrode 130 is formed on one surface (upper surface) 120a of the ceramic layer 120. The ceramic film 140 is formed on one surface 120a of the ceramic layer 120 so as to cover the electrode 130, that is, so as to cover one surface (upper surface) 130a and the side surface 130b of the electrode 130. The ceramic film 140 is the same as the ceramic film 10 in the above-described embodiment.

[0051] <Base> The base 110 is not particularly limited, but examples include ceramic bases, silicon carbide bases, and metal bases made of aluminum, stainless steel, etc.

[0052] <Ceramic layer> The ceramic layer 120 contains ceramic particles and a resin binder. As the ceramic particles constituting the ceramic layer 120, ceramic particles having the shape and material described in the ceramic particles 11 can be used. Furthermore, since the ceramic layer 120 is a resin layer containing ceramic particles and a resin binder, an electrostatic chuck device can be obtained with high adhesion and high voltage resistance due to the included resin binder.

[0053] The average primary particle size of the ceramic particles constituting the ceramic layer 120 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 1 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle size of the ceramic particles is within the above range, it becomes possible to form a film with small particle size, and the spaces between the ceramic particles become denser, resulting in an electrostatic chuck device with high adhesion and good thermal conductivity. The average primary particle diameter of the ceramic particles constituting the ceramic layer 120 can be measured using the laser diffraction / scattering method.

[0054] Examples of resin binders in the ceramic layer 120 include one or more resins selected from epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, polyacrylamide resins, acrylic resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like. The ceramic layer 120 may contain 100 to 10,000 parts by mass, preferably 300 to 4,000 parts by mass, and more preferably 500 to 2,000 parts by mass, of ceramic particles per 100 parts by mass of resin binder.

[0055] The thickness of the ceramic layer 120 is not particularly limited. Preferably, the thickness of the ceramic layer 120 is 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. If the thickness of the ceramic layer 120 is above the lower limit, insulating properties can be ensured. If the thickness of the ceramic layer 120 is below the upper limit, sufficient adsorption force is generated by the electrode 130.

[0056] <Electrode> The electrode 130 is not particularly limited as long as it is made of a conductive material that can exhibit electrostatic adsorption force when a voltage is applied. Preferably, the electrode 130 is a thin film made of metals such as copper, aluminum, gold, silver, platinum, chromium, nickel, or tungsten, or a thin film made of at least two metals selected from the group of metals. Examples of such thin metal films include those formed by vapor deposition, plating, sputtering, or by applying and drying a conductive paste. Specific examples of the electrode 130 include metal foils such as copper foil.

[0057] The electrode 130 may be a single-layer monopole or a bipole divided into two or more sections. The electrode pattern and shape of the electrode 130 are not particularly limited. The arrangement of the electrode 130 can be designed as appropriate.

[0058] The thickness of the electrode 130 is not particularly limited. Preferably, the thickness of the electrode 130 is 1 μm or more and 100 μm or less, and more preferably 3 μm or more and 20 μm or less. If the thickness of the electrode 130 is greater than or equal to the lower limit, when forming the ceramic film 140 to cover the electrode 130, it is less likely that irregularities will occur on one surface (upper surface) 120a of the electrode 130. If the thickness of the electrode 130 is less than or equal to the upper limit, sufficient bonding strength can be obtained between the electrode 130 and the other layers.

[0059] According to the electrostatic chuck device 100 of this embodiment, the dense layer made of metal oxide prevents the ceramic layer containing the resin binder from degrading due to plasma.

[0060] [Manufacturing method for electrostatic chuck device] The manufacturing method of the electrostatic chuck device of this embodiment includes a step of applying a coating containing ceramic particles and metal resinate to the surface of an electrode that is part of the electrostatic chuck device described above to form a coating film (coating step), and a step of heating the coating film (heating step). The manufacturing method of the electrostatic chuck device of this embodiment will be described below with reference to Figure 2.

[0061] "The process of preparing paint (paint preparation process)" The manufacturing method of the electrostatic chuck device of this embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate, similar to the ceramic film manufacturing method described above. The same paint as the one used for the ceramic film manufacturing method described above is used.

[0062] "Ceramic layer formation process" The ceramic layer 120 can be obtained by incorporating ceramic particles into a resin binder to obtain a slurry, coating it onto one surface of the base 110, and then heat-drying and curing it. Since the ceramic layer 120 can be formed by coating, thick films can be produced, and it is possible to produce them in a single coating process, thus shortening the production time compared to ceramic spraying or ceramic sintering methods.

[0063] "The process of forming electrodes (electrode formation process)" The manufacturing method of the electrostatic chuck device of this embodiment includes an electrode formation step in which an electrode 130 is formed on one surface (upper surface) 120a of the ceramic layer 120. In this step, a metal such as copper is deposited onto one surface 120a of the ceramic layer 120 to form a thin metal film (metal thin film). Subsequently, etching is performed to pattern the metal thin film into a predetermined shape to form the electrode 130.

[0064] "Coating process" In the coating process, the above-mentioned paint is applied to the surface of the electrode 130 formed on one surface 120a of the ceramic layer 120 (one surface (upper surface) 130a and side surface 130b) and to the surface of the ceramic layer 120 on which the electrode 130 is not formed, thereby forming a coating film.

[0065] The method for coating the electrodes with paint is the same as the method for coating the object to be coated in the ceramic film manufacturing method described above. The thickness of the coating film is the same as that of the ceramic film manufacturing method described above.

[0066] "Heating process" In the heating process, the coating film on the surface of the electrode 130 formed in the coating process and the coating film on the surface of the ceramic layer 120 where the electrode 130 is not formed are heated. As a result, a ceramic film 140 similar to the ceramic film described above is formed on the surface of the electrode 130. The heating method for the coating film is the same as that used for the ceramic film manufacturing method described above. The heating temperature and heating time for the coating film are the same as those for the ceramic film manufacturing method described above.

[0067] Furthermore, the manufacturing method of the electrostatic chuck device of this embodiment may also include a polishing step for polishing the surface of the ceramic film 140 (the surface not in contact with the electrode), similar to the ceramic film manufacturing method described above.

[0068] According to the manufacturing method of the electrostatic chuck device of this embodiment, it is possible to provide an electrostatic chuck device equipped with a ceramic film that has high voltage resistance and high adhesion.

[0069] <Other Embodiments> However, the present invention is not limited to the embodiments described above.

[0070] For example, an electrostatic chuck device 200 according to the first modified example shown in Figure 3, an electrostatic chuck device 300 according to the second modified example shown in Figure 4, and an electrostatic chuck device 400 according to the third modified example shown in Figure 5 may be used. In the electrostatic chuck devices 200, 300, and 400 according to the modified examples, the same reference numerals are used for parts that are the same as the components in the above embodiment, and their descriptions are omitted; only the differences will be described.

[0071] [First variation] The electrostatic chuck device 200 according to the first modified example shown in Figure 3 comprises a base 110, an electrode 130, a ceramic layer 120, and a ceramic film 140.

[0072] [Manufacturing method for the electrostatic chuck device of the first modified example] "The process of preparing paint (paint preparation process)" The manufacturing method of the electrostatic chuck device of this embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate, similar to the ceramic film manufacturing method described above. The same paint as the one used for the ceramic film manufacturing method described above is used.

[0073] "The process of forming electrodes (electrode formation process)" In the electrode formation process for forming the electrode 130, a metal such as copper is deposited onto one surface 110a of the base 110 to form a thin metal film. Subsequently, etching is performed to pattern the thin metal film into a predetermined shape to form the electrode 130.

[0074] "Ceramic layer formation process" Furthermore, the ceramic layer 120 can be obtained by incorporating ceramic particles into a resin binder to obtain a slurry, then coating it onto one surface 110a of the base 110, and then heat-drying and curing it. Since the ceramic layer 120 can be formed by coating, thick films can be produced, and it is possible to produce them in a single coating process, thus shortening the production time compared to ceramic spraying or ceramic sintering methods.

[0075] "Coating process" In the coating process, the aforementioned paint is applied to one surface of the ceramic layer 120 to form a coating film. The method of applying the paint is the same as the method of applying the paint to the object to be coated in the ceramic film manufacturing method described above. The thickness of the coating film is the same as in the ceramic film manufacturing method described above.

[0076] "Heating process" In the heating process, the coating film formed on the surface of the ceramic layer 120 in the coating process is heated. This forms a ceramic film 140 on the surface of the ceramic layer 120, similar to the ceramic film described above. The heating method for the coating film is the same as that for the manufacturing method of the ceramic film described above. The heating temperature and heating time for the coating film are the same as those for the manufacturing method of the ceramic film described above.

[0077] Furthermore, the manufacturing method of the electrostatic chuck device of this embodiment may also include a polishing step for polishing the surface of the ceramic film 140, similar to the manufacturing method of the ceramic film described above.

[0078] According to the first modified electrostatic chuck device 200, it is possible to provide an electrostatic chuck device equipped with a ceramic film that has high voltage resistance and high adhesion.

[0079] [Second variation] The electrostatic chuck device 300 according to the first modified example shown in Figure 4 comprises a base 110, an adhesive layer 310, an insulating organic film 320, an electrode 130, a ceramic layer 120, and a ceramic film 140. The insulating organic film 320 is laminated (adhered) to one surface (upper surface) 110a of the base 110 via the adhesive layer 310. The electrode 130 is formed on one surface (upper surface) 320a of the insulating organic film 320. The ceramic layer 120 is formed on one surface (upper surface) 320a of the insulating organic film 320 so as to cover the electrode 130, that is, so as to cover one surface (upper surface) 130a and the side surface 130b of the electrode 130. The ceramic film 140 is formed on one surface (upper surface) 120a of the ceramic layer 120.

[0080] <Adhesive layer> Examples of adhesives constituting the adhesive layer 310 include adhesives mainly composed of at least one resin selected from the group consisting of epoxy resin, phenolic resin, styrene-based block copolymer, polyamide resin, acrylonitrile-butadiene copolymer, polyester resin, polyimide resin, silicone resin, amine compound, bismaleimide compound, and the like.

[0081] Examples of epoxy resins include bisphenol-type epoxy resins, phenol novolac-type epoxy resins, cresol novolac-type epoxy resins, glycidyl ether-type epoxy resins, glycidyl ester-type epoxy resins, glycidylamine-type epoxy resins, trihydroxyphenylmethane-type epoxy resins, tetraglycidylphenol alkane-type epoxy resins, naphthalene-type epoxy resins, diglycidyl diphenylmethane-type epoxy resins, diglycidyl biphenyl-type epoxy resins, and other difunctional or polyfunctional epoxy resins. Among these, bisphenol-type epoxy resins are preferred. Among bisphenol-type epoxy resins, bisphenol A-type epoxy resins are particularly preferred. Furthermore, when epoxy resin is the main component, the adhesive may optionally contain curing agents or curing accelerators for epoxy resins, such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, and organic peroxides.

[0082] Examples of phenolic resins include alkylphenol resins, p-phenylphenol resins, novolac phenolic resins such as bisphenol A type phenolic resins, resolphenolic resins, and polyphenyl paraphenolic resins.

[0083] Examples of styrene-based block copolymers include styrene-butadiene-styrene-bro Examples include styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), and styrene-ethylene-propylene-styrene copolymer (SEPS).

[0084] The thickness of the adhesive layer 310 is not particularly limited. Preferably, the thickness of the adhesive layer 310 is 1 μm or more and 100 μm or less, and more preferably 5 μm or more and 20 μm or less. If the thickness of the adhesive layer 310 is less than the lower limit, the dielectric strength tends to decrease. If the thickness of the adhesive layer 310 exceeds the upper limit, thermal conductivity tends to deteriorate.

[0085] <Insulating Organic Film> The materials constituting the insulating organic film 320 are not particularly limited, and examples include polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyamide-imide, polyethersulfone, polyphenylene sulfide, polyetherketone, polyetherimide, triacetylcellulose, silicone rubber, and polytetrafluoroethylene. Among these, polyesters, polyolefins, polyimide, silicone rubber, polyetherimide, polyethersulfone, and polytetrafluoroethylene are preferred due to their excellent insulating properties, with polyimide being more preferred. As polyimide films, for example, Kapton (trade name) manufactured by Toray DuPont and Upirex (trade name) manufactured by Ube Industries are used.

[0086] The thickness of the insulating organic film 320 is not particularly limited. Preferably, the thickness of the insulating organic film 320 is 10 μm or more and 100 μm or less, and more preferably 25 μm or more and 50 μm or less. If the thickness of the insulating organic film 320 is above the lower limit, insulating properties can be ensured. If the thickness of the insulating organic film 320 is below the upper limit, sufficient adsorption force is generated by the electrode 130.

[0087] [Manufacturing method for the electrostatic chuck device of the second modified example] The second modified method for manufacturing an electrostatic chuck device comprises the steps of: laminating an insulating organic film on one surface (upper surface) of a base via an adhesive layer (hereinafter referred to as the "insulating organic film lamination step"); forming an electrode on one surface (upper surface) of the insulating organic film (electrode formation step); forming a ceramic layer on the surface of the electrode (ceramic layer formation step); applying a coating containing ceramic particles and metal resinate to form a coating film (coating step); and heating the coating film (heating step). The manufacturing method of the second modified electrostatic chuck device will now be described with reference to Figure 4.

[0088] "Paint preparation process" The manufacturing method of the electrostatic chuck device of this embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate, similar to the ceramic film manufacturing method described above. The same paint as the one used for the ceramic film manufacturing method described above is used.

[0089] "Insulating organic film lamination process" In the insulating organic film lamination process, the adhesive described above is applied to one surface (upper surface) 110a of the base 110 to form an adhesive layer 310.

[0090] Methods for applying adhesive to the base 110 include, for example, coating methods using coating equipment such as sprayers, gravure coaters, roll coaters, blade coaters, air knife coaters, and rod coaters, as well as dip coating, and printing methods such as offset printing and screen printing.

[0091] Next, an insulating organic film 320 is laminated onto one surface (upper surface) 110a of the base 110 via the adhesive layer 310. After that, the laminate including the base 110, adhesive layer 310, and insulating organic film 320 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, to cure the adhesive layer 310.

[0092] Alternatively, an adhesive sheet may be prepared as the adhesive layer 310, and the adhesive sheet may be attached to the insulating organic film 320. The adhesive sheet (adhesive layer 310) is attached to the insulating organic film 320, and the side of the adhesive sheet that is not attached to the insulating organic film 320 is attached to the base 110. Then, the laminate including the base 110, adhesive layer 310, and insulating organic film 320 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time to cure the adhesive layer 310.

[0093] "Electrode formation process" In the electrode formation process, a thin metal film (metal thin film) is formed on one side (top surface) 320a of the insulating organic film 320 in the same manner as the manufacturing method of the electrostatic chuck device in the embodiment described above. Subsequently, etching is performed to pattern the metal thin film into a predetermined shape to form the electrode 130.

[0094] "Ceramic layer formation process" The ceramic layer 120 can be obtained by incorporating ceramic particles into a resin binder to obtain a slurry, then coating it onto one side of the insulating organic film 320, and then heat-drying and curing it. Since the ceramic layer 120 can be formed by coating, thick films can be produced, and it is possible to produce them in a single coating process, thus shortening the production time compared to ceramic spraying or ceramic sintering methods.

[0095] "Coating process" In the coating process, the paint is applied to one surface 120a of the ceramic layer 120 to form a coating film, in the same manner as the manufacturing method of the electrostatic chuck device in the embodiment described above.

[0096] "Heating process" In the heating step, the coating film formed on the surface of the ceramic layer 120 in the coating step is heated in the same manner as in the manufacturing method of the electrostatic chuck device of the embodiment described above, to obtain the ceramic film 140.

[0097] Furthermore, the manufacturing method of the electrostatic chuck device of this embodiment may also include a polishing step for polishing the surface of the ceramic film 140, similar to the manufacturing method of the ceramic film in the above-described embodiment.

[0098] According to the second modified method for manufacturing an electrostatic chuck device, it is possible to provide an electrostatic chuck device equipped with a ceramic film that has high voltage resistance and high adhesion.

[0099] [Third variation] The electrostatic chuck device 400 according to the third modified example shown in Figure 5 comprises a base 110, an adhesive layer 310, an insulating organic film 320, an electrode 130, an adhesive layer 410, an insulating organic film 420, a ceramic layer 120, and a ceramic film 140. The insulating organic film 320 is laminated (adhered) to one surface (upper surface) 110a of the base 110 via the adhesive layer 310. The electrode 130 is formed on one surface (upper surface) 320a of the insulating organic film 320. The adhesive layer 410 is formed on one surface (upper surface) 320a of the insulating organic film 320 so as to cover the electrode 130, that is, so as to cover one surface (upper surface) 130a and the side surface 130b of the electrode 130. The insulating organic film 420 is laminated (bonded) to one surface (upper surface) 320a of the insulating organic film 320 via an adhesive layer 410. The ceramic film 140 is formed on one surface (upper surface) 120a of the ceramic layer 120.

[0100] The adhesive layer 410 can have the same configuration as the adhesive layer 310 described above. The configuration of the adhesive layer 410 may be the same as or different from the configuration of the adhesive layer 310 described above.

[0101] The insulating organic film 420 can have the same configuration as the insulating organic film 320. The configuration of the insulating organic film 420 may be the same as or different from that of the insulating organic film 320.

[0102] [Manufacturing method for a third modified electrostatic chuck device] The manufacturing method for the electrostatic chuck device of the third modified example comprises the steps of: forming an electrode on one side (upper surface) of a first insulating organic film (electrode formation step); laminating a second insulating organic film on the surface of the electrode via an adhesive layer (hereinafter referred to as the "step of laminating insulating organic films to obtain a laminate"); laminating the above laminate on one side (upper surface) of a base via an adhesive layer (hereinafter referred to as the "base-laminated laminate lamination step"); forming a ceramic layer on one side (upper surface) of the insulating organic film (ceramic layer formation step); applying a paint containing ceramic particles and metal resinate to form a coating film (coating step); and heating the coating film (heating step). The manufacturing method of the electrostatic chuck device of the third modified example will be described below with reference to Figure 5.

[0103] "Paint preparation process" The manufacturing method of the electrostatic chuck device of this embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate, similar to the ceramic film manufacturing method described above. The same paint as the one used for the ceramic film manufacturing method described above is used.

[0104] "Electrode formation process" In the electrode formation process, a thin metal film (metal thin film) is formed on one side (top surface) 320a of the insulating organic film 320 in the same manner as the manufacturing method of the electrostatic chuck device in the embodiment described above. Subsequently, etching is performed to pattern the metal thin film into a predetermined shape to form the electrode 130.

[0105] "A process of obtaining a laminate by laminating insulating organic films." In the process of obtaining a laminate by laminating insulating organic films, an adhesive sheet is prepared as an adhesive layer 410, and the adhesive sheet (adhesive layer 410) is attached to the electrode 130 forming surface of the insulating organic film 320. Next, the insulating organic film 420 is attached to the surface of the adhesive sheet (adhesive layer 410) to which the insulating organic film 320 is not attached, thereby obtaining a laminate.

[0106] "Lamination process of base-to-laminated structure" In the lamination process of the base-laminated structure, an adhesive sheet is prepared as the adhesive layer 310, and the adhesive sheet (adhesive layer 310) is attached to the side of the insulating organic film 320 of the laminate that is opposite to the side where the electrode 130 is formed. Furthermore, the side of the adhesive sheet (adhesive layer 310) that is opposite to the side to which the insulating organic film 320 is attached is attached to one side (top surface) 110a of the base 110. After that, the laminate including the base 110, adhesive layer 310 and insulating organic film 320, electrode 130, adhesive layer 410 and insulating organic film 420 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, thereby curing the adhesive layer 310 and adhesive layer 410.

[0107] "Ceramic layer formation process" The ceramic layer 120 can be obtained by incorporating ceramic particles into a resin binder to obtain a slurry, coating it onto one side of an insulating organic film 420, and then heat-drying and curing it. Since the ceramic layer 120 can be formed by coating, thick films can be produced, and it is possible to produce them in a single coating process, thus shortening the production time compared to ceramic spraying or ceramic sintering methods.

[0108] "Coating process" In the coating process, the paint is applied to one surface 120a of the ceramic layer 120 to form a coating film, in the same manner as the manufacturing method of the electrostatic chuck device in the embodiment described above.

[0109] "Heating process" In the heating step, the coating film formed on the surface of the ceramic layer 120 in the coating step is heated in the same manner as in the manufacturing method of the electrostatic chuck device of the embodiment described above, to obtain the ceramic film 140.

[0110] Furthermore, the manufacturing method of the electrostatic chuck device of this embodiment may also include a polishing step for polishing the surface of the ceramic film 140, similar to the manufacturing method of the ceramic film in the above-described embodiment.

[0111] According to the third modified method for manufacturing an electrostatic chuck device, it is possible to provide an electrostatic chuck device equipped with a ceramic film that has high voltage resistance and high adhesion.

[0112] While embodiments of this invention have been described in detail above with reference to the drawings, these embodiments are merely illustrative examples of the invention. Therefore, this invention is not limited to the configurations of the embodiments, and any design changes, etc., that do not depart from the gist of this invention are also included. Furthermore, for example, if each embodiment includes multiple configurations, it goes without saying that possible combinations of these configurations are included, even if not specifically stated. Also, if multiple examples or variations are disclosed as part of this invention within an embodiment, it goes without saying that possible combinations of configurations spanning these are included, even if not specifically stated. Moreover, configurations depicted in the drawings are included, even if not specifically stated. Furthermore, where the term "etc." is used, it means that equivalent items are included. [Examples]

[0113] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

[0114] [Example 1] "Preparation of coatings for forming ceramic film 140" Six parts by mass of spherical alumina particles (Denka Co., Ltd., Al2O3) with an average primary particle diameter of 0.3 μm were mixed with four parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) using a rotary-orbiting stirrer (Shashin Kagaku Co., Ltd., product name: Kakuhunter) to obtain a coating for forming ceramic film 140.

[0115] "Fabrication of an electrostatic chuck device" An electrostatic chuck device having a configuration similar to the third modified example shown in Figure 5 was fabricated. As the insulating organic film 320, a polyimide film (product name: Kapton, manufactured by Toray DuPont) with a thickness of 12.5 μm was plated with copper to a thickness of 9 μm on one side. After applying photoresist to the surface of the copper foil, a pattern exposure and development process was performed, and unwanted copper foil was removed by etching. Subsequently, the photoresist was removed by washing the copper foil on the polyimide film, and the electrode 130 was formed. Furthermore, this electrode 130 is a comb-shaped electrode having two comb-shaped sections in which conductive sections and insulating sections, each 5 mm wide, are arranged alternately. Next, an insulating adhesive sheet, partially cured by drying and heating, was laminated onto the electrode 130 as an adhesive layer 410. The insulating adhesive sheet was prepared by mixing and dissolving 27 parts by mass of bismaleimide resin, 3 parts by mass of diaminosiloxane, 20 parts by mass of resolphenol resin, 10 parts by mass of biphenyl epoxy resin, and 240 parts by mass of ethyl acrylate-butyl acrylate-acrylonitrile copolymer in an appropriate amount of tetrahydrofuran, and then forming it into a sheet. Subsequently, a polyimide film (trade name: Kapton, manufactured by Toray DuPont) with a thickness of 12.5 μm was attached as an insulating organic film 420, and a laminate was obtained by heat treatment to achieve adhesion. The thickness of the adhesive layer 410 after drying was 20 μm.

[0116] Furthermore, on the side of the laminate opposite to the side of the insulating organic film 320 on which the electrodes 130 were formed, a sheet made of an insulating adhesive having the same composition as the semi-cured insulating adhesive sheet was laminated as an adhesive layer 310. The laminate was then attached to an aluminum base 110 and bonded by heat treatment. The thickness of the adhesive layer 310 after drying was 10 μm.

[0117] Next, 2000 parts by mass of alumina particles with an average primary particle diameter of 0.3 μm were mixed and dissolved in an appropriate amount of water with 100 parts by mass of polyacrylamide resin. This mixture was then applied to the entire surface of the insulating organic film 420 as a coating for forming the ceramic layer 120, and then heated and dried to form a ceramic layer 120 with a thickness of 30 μm.

[0118] Next, a coating for forming the ceramic film 140 was applied to the entire exposed surface of the ceramic layer 120 and dried in the air to remove the solvent. Then, the coating surface was heated with a burner and continued heating until the coating turned black (oxidation of organic matter) and then white (removal of organic matter and oxidation of metal) to form a ceramic film 140 with a thickness of 50 μm, obtaining the electrostatic chuck device of Example 1.

[0119] [Example 2] An electrostatic chuck device for Example 2 was fabricated in the same manner as in Example 1, except that a mixture of 4 parts by mass of spherical alumina particles (manufactured by Denka Co., Ltd., Al2O3) with an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was added as a coating for forming the ceramic film 140.

[0120] [Example 3] An electrostatic chuck device for Example 3 was fabricated in the same manner as in Example 1, except that the coating for forming the ceramic film 140 was 2 parts by mass of spherical alumina particles (manufactured by Denka Co., Ltd., Al2O3) with an average primary particle diameter of 0.3 μm, to which 8 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was added.

[0121] [Example 4] An electrostatic chuck device for Example 4 was fabricated in the same manner as in Example 1, except that 8 parts by mass of spherical alumina particles (manufactured by Denka Co., Ltd., Al2O3) with an average primary particle diameter of 0.3 μm were used as the coating for forming the ceramic film 140, to which 2 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was added.

[0122] [Example 5] An electrostatic chuck device for Example 5 was fabricated in the same manner as in Example 1, except that a mixture of 6 parts by mass of spherical alumina particles (manufactured by Denka Co., Ltd., Al2O3) with an average primary particle diameter of 0.1 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was used as the coating for forming the ceramic film 140.

[0123] [Example 6] An electrostatic chuck device for Example 6 was fabricated in the same manner as in Example 1, except that a mixture of 6 parts by mass of spherical alumina particles (manufactured by Denka Co., Ltd., Al2O3) with an average primary particle diameter of 5 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was used as the coating for forming the ceramic film 140.

[0124] [Example 7] An electrostatic chuck device of Example 7 was fabricated in the same manner as in Example 1, except that instead of 4 parts by mass of a toluene solution of yttrium laurate (10% by mass solids) as the coating for forming the ceramic film 140, 4 parts by mass of a toluene solution of magnesium stearate (10% by mass solids) was added.

[0125] [Example 8] An electrostatic chuck device of Example 8 was fabricated in the same manner as in Example 1, except that instead of 4 parts by mass of a toluene solution of yttrium laurate (10% by mass solids) as the coating for forming the ceramic film 140, 4 parts by mass of a toluene solution of nickel stearate (10% by mass solids) was added.

[0126] [Example 9] An electrostatic chuck device of Example 9 was fabricated in the same manner as in Example 1, except that a mixture of 6 parts by mass of spherical magnesia particles (manufactured by Denka Co., Ltd., MgO) with an average primary particle diameter of 0.3 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was used as the coating for forming the ceramic film 140.

[0127] [Example 10] An electrostatic chuck device for Example 10 was fabricated in the same manner as in Example 1, except that a mixture of 4 parts by mass of spherical magnesia particles (manufactured by Denka Co., Ltd., MgO) with an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was used as the coating for forming the ceramic film 140.

[0128] [Example 11] An electrostatic chuck device of Example 11 was prepared in the same manner as in Example 1, except that a mixture of 2,000 parts by mass of yttria particles with an average primary particle diameter of 0.3 μm and 100 parts by mass of polyacrylamide resin, dissolved in an appropriate amount of water, was used as the coating for forming the ceramic layer 120.

[0129] [Example 12] An electrostatic chuck device of Example 12 was fabricated in the same manner as in Example 1, except that a mixture of 2000 parts by mass of alumina particles with an average primary particle diameter of 0.3 μm was used as the coating for forming the ceramic layer 120, with 100 parts by mass of polyimide resin solution.

[0130] [Example 13] An electrostatic chuck device of Example 13 was fabricated in the same manner as in Example 1, except that a mixture of 2,000 parts by mass of alumina particles with an average primary particle diameter of 0.3 μm and 100 parts by mass of epoxy resin, dissolved in an appropriate amount of solvent, was used as the coating for forming the ceramic layer 120.

[0131] [Example 14] An electrostatic chuck device of Example 14 was fabricated in the same manner as in Example 1, except that a mixture of 2,000 parts by mass of alumina particles with an average primary particle diameter of 0.3 μm and 100 parts by mass of acrylic resin, dissolved in an appropriate amount of solvent, was used as the coating for forming the ceramic layer 120.

[0132] [Comparative Example 1] A comparative electrostatic chuck device of Comparative Example 1 was fabricated in the same manner as in Example 1, except that a paint for forming a ceramic film 140 was directly applied to the surface of an insulating organic film 420 to form a ceramic film 140, without forming a ceramic layer 120.

[0133] <Confirmation of ceramic film> The ceramic film 140 formed on the surface of each electrostatic chuck device in Examples 1 to 14 was imaged using a scanning electron microscope (SEM) to confirm the state of each particle. As a result, it was confirmed that at least a portion of the ceramic particles in the ceramic film 140 formed on the surface of each electrostatic chuck device in Examples 1 to 14 were bonded together via metal oxides.

[0134] [evaluation] The following dielectric strength tests were performed using the electrostatic chuck devices obtained in Examples 1 to 14.

[0135] <Withstand voltage> A copper foil was placed on the suction surface of the electrostatic chuck device, and this copper foil and the base were grounded. Next, a voltage was applied between the terminals located at both ends of the comb-shaped electrode. Then, the applied voltage difference (voltage difference between terminals) was gradually increased, and the applied voltage difference at the point of dielectric breakdown was measured.

[0136] As a result of evaluating the dielectric strength, the electrostatic chuck devices of Examples 1 to 14 did not experience dielectric breakdown even when the applied voltage difference was 20kV or more.

[0137] Furthermore, the following adhesion tests were performed using the electrostatic chuck devices obtained in Examples 1 to 14 and Comparative Example 1. <Adhesion> The adhesion of the suction surface of the electrostatic chuck device was evaluated by performing a tape peel test. The tape peel test was performed in accordance with the method described in "g) Peel test method" of "1) Tape test method" in "Test method for adhesion of plating" of JIS H8504 (1999). As a result, no deposits were found on the adhesive surface of the adhesive tape in the electrostatic chuck devices of Examples 1 to 14. On the other hand, in the electrostatic chuck device of Comparative Example 1, a portion of the ceramic film 140 was attached to the adhesive surface of the adhesive tape. [Explanation of Symbols]

[0138] 10 Ceramic film 11,11A,11B,11C,11D,11E ceramic particles 12,12A,12B metal oxides 20 Object to be coated 100, 200, 300, 400, 500 Electrostatic Chuck Device 110 base 120 Ceramic Layers 130 electrodes 140 Ceramic film 310,410 Adhesive layer 320,420 Insulating Organic Film

Claims

1. An electrostatic chuck device having a ceramic film and a ceramic layer containing a resin binder, The ceramic film contains ceramic particles and a metal oxide. An electrostatic chuck device characterized in that at least a portion of the ceramic particles are bonded together via the metal oxide.

2. The electrostatic chuck device according to claim 1, characterized in that the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide.

3. The electrostatic chuck device according to claim 1 or 2, characterized in that the average primary particle diameter of the ceramic particles is 0.1 μm or more and 50 μm or less.

4. The electrostatic chuck device according to any one of claims 1 to 3, characterized in that the metal oxide is a metal oxide obtained by heat treatment of an organometallic compound in which the organic component is decomposed and removed, and the metal constituting the organometallic compound is oxidized.

5. The electrostatic chuck device according to claim 4, characterized in that the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium.

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