High-temperature biasable heater with advanced far-end electrode, electrostatic chuck, and embedded ground electrode

Abstract

Examples of substrate supports are provided herein. In some examples, the substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support a substrate and a second side opposite to the first side. The body has a chuck electrode, an active edge electrode positioned adjacent to the chuck electrode, a floating mesh positioned below the chuck electrode, a heater positioned below the floating mesh, and a grounding mesh positioned below the heater, the grounding mesh being adjacent to the second side.

Description

Technical Field

[0001] Examples of the present disclosure generally relate to apparatuses and methods for manufacturing semiconductor devices. More particularly, the apparatuses disclosed herein relate to an electrostatic chuck assembly for use in a plasma processing chamber.

Background Art

[0002] The manufacture of microelectronic devices typically involves a complex sequence of hundreds of individual processes performed on semiconducting, dielectric, and conductive substrates. Examples of these processes include, among other operations, oxidation, diffusion, ion implantation, thin film deposition, cleaning, etching, and lithography. Each operation is time-consuming and expensive.

[0003] As the critical dimensions of microelectronic devices continue to shrink, the design and manufacture of these devices on a substrate has become increasingly complex or has become complex. Control of critical dimensions and process uniformity has become increasingly important. The complex multilayer stacks used to fabricate microelectronic devices involve precise process monitoring of critical dimensions with respect to thickness, roughness, stress, density, and potential defects. Process strategies for forming devices include multiple incremental processes so that critical dimensions are reliably maintained. Typically, each incremental process may utilize one or more processing chambers, further increasing the time required to form the device and the opportunity for defects to form.

[0004] As the critical dimensions on these devices shrink, existing manufacturing techniques face new challenges. For example, one of the operations used in manufacturing these devices is bottom-up trench filling of metal. As the critical dimensions of these devices shrink further, the filling material tends to close the top of the trench before the bottom is completely filled. Furthermore, process skew can occur due to plasma coupling to the electrostatic chuck supporting the substrate during device formation, and / or temperature non-uniformity across the electrostatic chuck, which can negatively impact process performance. To achieve good bottom-up filling and prevent process skew, conventional solutions required the use of various dedicated chambers. However, multiple operations across multiple processing chambers increase manufacturing costs and complexity.

[0005] Therefore, an improved processing system is needed. [Overview of the project]

[0006] Examples of substrate supports are provided herein. In some examples, the substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support a substrate and a second side opposite to the first side. The body has a chuck electrode, an active edge electrode positioned adjacent to the chuck electrode, a floating mesh positioned below the chuck electrode, a heater positioned below the floating mesh, and a grounding mesh positioned below the heater, the grounding mesh being adjacent to the second side.

[0007] In another example, a processing chamber is provided. The processing chamber comprises a chamber body and a substrate support disposed within the internal space of the chamber body. The substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support the substrate and a second side opposite to the first side. The body has a chuck electrode, an active edge electrode disposed adjacent to the chuck electrode, a floating mesh disposed below the chuck electrode, a heater disposed below the floating mesh, and a ground mesh disposed below the heater, the ground mesh being adjacent to the second side.

[0008] To allow for a more detailed understanding of the above-mentioned features of the present invention, a more specific description of the invention, which has been concisely summarized above, may be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of the present invention and should not be considered to limit the scope of the invention, as the invention may recognize other equally effective embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic side view of a process chamber having a substrate support according to at least some examples of the present disclosure. [Figure 2A] This is a schematic partial side view of a substrate support according to an example of the present disclosure. [Figure 2B] Figure 2A is a magnified view of a portion of the substrate support shown. [Figure 3] This is a schematic partial side view of a substrate support according to another example of the present disclosure. [Modes for carrying out the invention]

[0010] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings, where possible. Elements disclosed in one embodiment are intended to be usefully used in other embodiments without specific mention.

[0011] This disclosure provides an electrostatic chuck assembly having an edge ring mounted on a ceramic plate. The ceramic plate supports a substrate during plasma processing. The ceramic plate has a heater capable of heating the substrate up to 700°C. The ceramic plate has separate chuck electrodes for chucking the substrate and the edge ring. To increase plasma density at the substrate edge, a radio frequency (RF) electrode (edge ​​electrode) extends to the very edge of the ceramic plate, thereby reducing the edge exclusion area on the substrate and improving throughput. Control of the film profile on the substrate can be maintained while operating at frequencies from 350 kHz to 60 MHz. The ceramic plate enables RF pulses with very low duty cycles of 0.2 Hz to 20 Hz, preventing film damage by enabling bottom-up trench filling. Low duty cycle RF pulses in the 0.2Hz to 20Hz range can be used in plasma-excited chemical vapor deposition (PECVD) and plasma-excited atomic layer deposition (PEALD) processes, which enable bottom-up filling of trenches by preventing the sidewalls of the trenches from closing during filling, thereby suppressing the formation of porous films within the trenches.

[0012] The embedded grounded RF electrode helps prevent RF coupling to the chamber bottom, thereby reducing the required chamber depth and therefore chamber volume. This reduction in chamber volume beneficially shortens the purging time required during the PEALD process.

[0013] Advantageously, high-temperature electrostatic chuck assemblies can perform both PECVD / PEALD deposition and in-situ etching / processing processes while using the same ceramic plate. Electrostatic chuck assemblies can improve film edge coverage by using edge electrodes. In addition, the electrostatic chuck assembly has a smaller footprint due to the embedded ground electrode, and its reliability is also improved by avoiding plasma ignition in gaps, as seen in previous approaches to grounding.

[0014] Figure 1 shows a schematic side view of a plasma processing chamber 100 having a substrate support 124 according to at least some examples of the present disclosure. In some examples, the plasma processing chamber 100 is an etching processing chamber. However, other types of processing chambers configured for different processes may also be used with the examples of substrate support 124 described herein, or may be modified for use.

[0015] The plasma processing chamber 100 is a vacuum chamber appropriately adapted to maintain a pressure below atmospheric pressure within the chamber's internal volume 120 during substrate processing. The plasma processing chamber 100 includes a chamber body 106 covered by a lid 104 that surrounds a processing volume 121 located above the chamber's internal volume 120 and above the substrate support 124. The plasma processing chamber 100 also includes one or more liners 105 surrounding various chamber components to prevent undesirable reactions between such components and the ionized process material. The chamber body 106 and the lid 104 may be made of a metal such as aluminum. The chamber body 106 may be grounded via a coupling to ground 115.

[0016] The substrate support 124 is positioned within the chamber's internal volume 120 and supports and holds a substrate 122, such as a semiconductor wafer, on it. The substrate support 124 may generally comprise an electrostatic chuck assembly 150 (described in more detail below with respect to Figure 2B) and a hollow support shaft 112 for supporting the electrostatic chuck assembly 150. The electrostatic chuck assembly 150 comprises an electrostatic chuck 152 with one or more chuck electrodes 154 positioned inside. An edge ring 187 is positioned on the substrate support 124 and surrounds the substrate 122. The electrostatic chuck 152 electrostatically chucks the substrate 122 to the substrate support 124.

[0017] The hollow support shaft 112 provides a conduit for supplying, for example, backside gas, process gas, fluid, coolant, power, etc., to the substrate support 124. In some examples, the hollow support shaft 120 is attached to the bottom surface of the plasma chamber body 106, and the substrate support 124 is fixed within the processing chamber 100. In other examples, the hollow support shaft 112 is coupled to a lift mechanism 113, such as an actuator or motor, which provides vertical movement of the electrostatic chuck assembly 150 between an upper processing position (shown in Figure 1) and a lower transfer position (not shown). The bellows assembly 110 is positioned around the hollow support shaft 112 and coupled between the electrostatic chuck assembly 150 and the bottom surface 126 of the plasma processing chamber 100, providing a flexible seal that allows vertical movement of the electrostatic chuck assembly 150 while preventing vacuum loss from within the plasma processing chamber 100.

[0018] The hollow support shaft 112 provides conduits for coupling the backside gas supply source 141, the negative pulse DC power supply 140, and the bias power supply 117 to the electrostatic chuck assembly 150. In some examples, the bias power supply 117 includes one or more RF bias power supplies. The backside gas supply source 141 is located outside the chamber body 106 and supplies heat transfer gas to the electrostatic chuck assembly 150. In some embodiments, the substrate support 124 may instead include AC, DC, or RF bias power.

[0019] The substrate support 124 may or may not include a substrate lift assembly 130. The substrate lift assembly 130 may include lift pins 109 mounted on the platform 108 and connected to a shaft 111 connected to a second lift mechanism 132 for raising and lowering the platform 108 and pins 109, so that the substrate 122 can be placed on or removed from the electrostatic chuck assembly 150. The electrostatic chuck assembly 150 includes through holes for receiving the lift pins 109. A bellows assembly 131 is coupled between the substrate lift assembly 130 and the bottom surface 126 and provides a flexible seal that maintains the chamber vacuum during the vertical movement of the substrate lift 130. Alternatively, the substrate lift assembly 130 may be entirely contained within the processing chamber 100, for example, within the substrate support assembly 124.

[0020] In some examples, the electrostatic chuck assembly 150 includes a gas distribution channel 142 extending from the bottom surface of the electrostatic chuck assembly 150 to various openings on the top surface of the electrostatic chuck assembly 150. The gas distribution channel 142 is configured to supply a back gas, such as nitrogen (N) or helium (He), to the top surface of the electrostatic chuck assembly 150 to act as a heat transfer medium. The gas distribution channel 142 is in fluid communication with a back gas supply source 141 via a conduit to control the temperature and / or temperature profile of the electrostatic chuck assembly 150 during use.

[0021] The plasma processing chamber 100 is coupled to and fluid-communicated with a pumping system 114, which includes a throttle valve (not shown) and a vacuum pump (not shown) used to evacuate the plasma processing chamber 100. The pressure inside the plasma processing chamber 100 may be regulated by adjusting the throttle valve and / or the vacuum pump. The plasma processing chamber 100 is also coupled to and fluid-communicated with a process gas source 118, which can supply one or more process gases to the plasma processing chamber 100 for processing a substrate 122 placed inside it.

[0022] In operation, plasma 102 is generated within the chamber interior volume 120 and one or more processes are executed. Plasma 102 may be generated by coupling power from a plasma power source (e.g., RF plasma power source 170) to a process gas through one or more electrodes in the vicinity of or within the chamber interior volume 120 to ignite the process gas and generate plasma 102. Bias power may also be supplied from bias power supply 117 to one or more chuck electrodes 154 within electrostatic chuck assembly 150 to attract ions from plasma 102 towards substrate 122. RF plasma power source 170 can supply RF energy at a frequency of about 40 MHz or higher to processing chamber 100 to maintain plasma 102 within processing chamber 100.

[0023] FIG. 2A shows a schematic partial side view of substrate support 124 according to at least one example of the present disclosure. FIG. 2B shows an enlarged view of a portion of the substrate support shown in FIG. 2A and is referred to to provide a detailed view for explaining the position of features.

[0024] Electrostatic chuck 152 has a body 202. Body 202 can be uniformly formed of a ceramic material. In one example, body 202 is made of AlN, Al2O3, quartz, or other suitable material. Body 202 of electrostatic chuck 152 is manufactured in the form of a ceramic plate with electrodes embedded therein.

[0025] Body 202 includes a first side 216 configured to support substrate 122 and a second side 224 opposite the first side 216. Electrostatic chuck 152 has an outer diameter 255. Body 202 has an inner portion 282 and an outer portion 281 that extends to outer diameter 255 and surrounds inner portion 282. Substrate 122 is disposed on inner portion 282 and edge ring 187 is disposed on outer portion 281. The thickness of body 202 between first side 216 and second side 224 is about 18 mm to 22 mm, for example about 20 mm.

[0026] The body 202 of the electrostatic chuck 152 has one or more chuck electrodes 154, an RF floating mesh 231, an optional spoke mesh 229, one or more heaters 249, and a ground mesh 247. One or more chuck electrodes 154, the RF floating mesh 231, and the spoke mesh 229 may all be coupled to one or more RF power supplies. One or more chuck electrodes 154 may be coupled to a DC power supply and, optionally, also to an RF power supply.

[0027] One or more chuck electrodes 154 are embedded in an inner portion 282 of the body 202 immediately adjacent to the first side 216. When energized, the chuck electrodes 154 electrostatically chuck the substrate 122 to the first side 216 of the electrostatic chuck 152. One or more chuck electrodes 154 may be monopolar or bipolar. In some examples, the electrostatic chuck 152 provides Coulomb chucking. In some examples, the electrostatic chuck 152 provides Johnson-Rahbeck chucking. In some examples, one or more chuck electrodes 154 include an upper electrode, a lower electrode (not shown), and a plurality of posts electrically coupled to the upper and lower electrodes. In one or more examples, the chuck electrode may further be an RF bias electrode. For example, RF power can be supplied over DC chucking.

[0028] Adjacent to the chuck electrode 154 is an active far-edge electrode 119 located on the outer portion 281 of the main body 202. The active far-edge electrode 119 may be coupled to a bias power supply 117 for biasing and shaping the plasma sheath. The active far-edge electrode 119 is configured to operate independently of the chuck electrode 154. However, the chuck electrode 154 may optionally be coupled to the bias power supply 117 for shaping the plasma sheath in addition to the chucking power supply. A variable capacitor 241 may be placed between the bias power supply 117 and the chuck electrode 154 to isolate the chuck electrode 154 from the active far-edge electrode 119. In one example, the active far-edge electrode 119 may be energized while the chuck electrode 154 is not energized. However, it should be understood that the chuck electrode 154 may be energized simultaneously with the active far-edge electrode 119, or alternately while the active far-edge electrode 119 is not energized.

[0029] In some examples, the RF energy supplied by the bias power supply 117 can have a frequency of approximately 350 kHz to approximately 60 MHz. In one example, the bias power supply 117 is configured to generate an RF signal superimposed on a pulsed voltage signal of a negative pulsed DC power supply 140. In one example, the voltage waveform of the negative pulsed DC power supply 140 can include a pulsed voltage signal in the range of approximately 0.2 Hz to approximately 20 Hz with a duty cycle in the range of 10% to 100%, superimposed on an RF signal of approximately 350 kHz to approximately 60 MHz. The negative pulsed DC power supply 140 is configured to provide a power profile for compensating for plasma sheath curvature and maintaining a substantially flat plasma sheath profile across the substrate 122.

[0030] The edge ring 187 is positioned horizontally above the active far-end electrode 119 in the outer portion 281 of the electrostatic chuck 152. The active far-end electrode 119 may be further coupled to a negative pulsed DC power supply (not shown) to chuck the edge ring 187 into the electrostatic chuck 152. The negative pulsed DC power supply is configured to provide a power profile to compensate for the curvature of the plasma sheath and maintain a substantially flat plasma sheath profile along the edge of the substrate 122.

[0031] All dimensions described further below are taken along the outer diameter 255. For example, the body 202 has a pocket located in the center of the first side surface 216 of the body 202. The pocket is above the chuck electrode 154 and extends beyond its length. The pocket can extend into the body by about 0.5 mm to about 1.3 mm, for example, 1 mm. When describing the distance at which the chuck electrode 154 is positioned below the first side surface 216, this distance includes the material of the body 202 that is not present in the pocket. Therefore, when it is described that the chuck electrode 154 is positioned 2 mm below the first side surface 216, the chuck electrode 154 may be only 1 mm below the surface of the pocket.

[0032] The active far-end electrode 119 may be spaced about 2 mm to 3 mm from the outer diameter 255 at a distance 297. For example, the distance 297 from the active far-end electrode 119 may be about 2.5 mm from the outer diameter 255. The chuck electrode 154 may be spaced about 2 mm to 6 mm, for example about 4 mm, from the adjacent active far-end electrode 119 at a distance 298. The chuck electrode 154 and the active far-end electrode 119 may be located about 1.5 mm to 3 mm, for example about 2.3 mm, below the first side surface 216 at a distance 291. The active far-end electrode 119 extends to the very edge of the body 202 so that a higher density plasma can be obtained at the edge of the substrate 122, thereby reducing the edge exclusion area on the substrate 122 and improving throughput.

[0033] The spoke mesh 229 is positioned horizontally within the body 202 below the active far-end electrode 119 and is electrically coupled to the active far-end electrode 119. One or more vertical jumpers couple the spoke mesh 229 to the active far-end electrode 119. A bias power supply 117 supplies RF energy to the active far-end electrode 119 via the spoke mesh 229. A variable capacitor 217 may be positioned between the bias power supply and the spoke mesh 229. The spoke mesh 229 can further function as an RF electrode in the inner portion 282 of the body 202 in place of one or more chuck electrodes 154. Thus, the spoke mesh may be used to adjust the profile of the plasma sheath above the substrate 122, but in that case, the spoke mesh 229 does not operate independently of the active far-end electrode 19.

[0034] In one example, the spoke mesh 229 has a shape with four or six sections radiating outward from the center of the body 202. In another example, the spoke mesh has seven or more sections radiating outward from the center of the body 202. In yet another example, the spoke mesh 229 is disc-shaped.

[0035] The spoke mesh 229 is spaced approximately 4 mm to 6 mm, for example, 5 mm, from the active far-end electrode 119 by a distance 292. The spoke mesh 229 may also be spaced approximately 2 mm to 3 mm from the outer diameter 255. For example, the distance 297 from the outer diameter 255 of the spoke mesh 229 may be approximately 2.5 mm.

[0036] The pulses of the bias power supply 117, which have a very low duty cycle and pulse frequency of 0.2Hz to 20Hz, prevent film damage by enabling bottom-up trench filling. Pulses at the 0.2Hz to 20Hz level can be used in PECVD and PEALD processes for bottom-up trench filling, while simultaneously preventing the trench sidewalls from closing, thus minimizing porous film formation.

[0037] The body 202 of the electrostatic chuck 152 further includes an RF floating mesh 231 horizontally embedded in the body 202 and positioned below the spoke mesh 229. The RF floating mesh 231 is not electrically coupled to system ground or any power supply. In one example, the RF floating mesh 231 is not connected to ground or any other electrical circuit. The RF floating mesh 231 helps filter out harmful RF signals from entering the non-RF environment. The RF floating mesh 231 is positioned between RF hot sources such as the spoke mesh 229, the active far-end electrode 119, and the chuck electrode 154, and non-RF hot features such as one or more heating elements 249 and a ground mesh 247. The RF floating mesh 231 minimizes the coupling of RF signals from the RF hot sources to one or more heating elements 249 or the ground mesh 247.

[0038] The RF floating mesh 231 is positioned at a distance 293 of approximately 0.5 mm to 2.0 mm below the spoke mesh 229. For example, the distance 293 of the RF floating mesh 231 below the spoke mesh 229 is approximately 1.0 mm. The RF floating mesh 231 may also be spaced approximately 2 mm to 3 mm from the outer diameter 255. For example, the distance 297 of the RF floating mesh 231 from the outer diameter 255 may be approximately 2.5 mm.

[0039] One or more heating elements 249 are embedded in the body 202 below the spoke mesh 229. The heating elements 249 may be positioned at a distance 294 approximately 4 mm to 6 mm below the RF floating mesh 231, for example, approximately 5 mm below the RF floating mesh 231. The heating elements 249 extend horizontally within the body 202 for approximately 1.5 mm to 3 mm from the outer diameter 255 of the body 202. In one example, the distance 297 by which the heating elements 249 extend horizontally within the body 202 is approximately 2.5 mm from the outer diameter 255 of the body 202.

[0040] The heating elements 249 may be arranged in one or more zones to control the temperature of the electrostatic chuck 152. For example, the heating elements 249 may be arranged in one, two, or four zones to supply temperature to the substrate 122. The heating elements 249 are coupled to a power supply 248, for example, an AC power supply, to power the heating elements 249. One or more heating elements 249 are configured to supply temperatures to the substrate between approximately 200°C and approximately 700°C. For example, the electrostatic chuck 152 is configured to operate at temperatures above 600°C, for example, approximately 650°C.

[0041] The grounding mesh 247 is embedded in the main body 202 below the heating element 249. The grounding mesh 247 is coupled to the system ground. The grounding mesh 247 provides a conductive path for guiding energy in the electrostatic chuck 152, such as energy from the plasma, to the system ground and prevents arc discharge between the electrostatic chuck 152 and the side wall of the processing chamber 100.

[0042] The grounding mesh 247 may be positioned at a distance 295 approximately 3 mm to 5 mm below the heating element 249, for example, approximately 4 mm below the heating element 249. The distance 297 that the grounding mesh 247 extends horizontally within the body 202 is approximately 1.5 mm to 3 mm from the outer diameter 255 of the body 202. In one example, the grounding mesh 247 extends horizontally within the body 202 to approximately 2.5 mm from the outer diameter 255 of the body 202. Furthermore, the grounding mesh 247 may be positioned at a distance 296 approximately 1.5 mm to 3.5 mm above the second side surface 224, for example, approximately 2.5 mm above the second side surface 224. With this arrangement, the grounding mesh 247 is positioned within the body 202 as the feature closest to the second side surface 224, i.e., the bottom surface of the ESC 152.

[0043] The embedded grounding mesh 247 prevents RF coupling to the bottom of the chamber and also prevents plasma ignition in any gap between the ESC and the grounding shield found in conventional electrostatic chucks. Plasma ignition leads to undesirable chemical deposition around the heater. The grounding mesh 247 further helps to reduce the depth, and therefore the internal volume, of the processing chamber 100. This reduction in volume helps to shorten the purging time required during the PEALD process.

[0044] In one example, the substrate 122 is electrostatically chucked onto an electrostatic chuck 152 using an HV DC power supply, the temperature of the electrostatic chuck 152 is maintained at a desired process temperature using a heater controller, while a thermocouple (also penetrating the shaft) provides feedback loop control, and an RF bias may be provided using a bias power supply 117 when required for the PEALD and etching / processing steps.

[0045] Advantageously, the positioned electrostatic chuck 152 can operate at temperatures up to 700°C, along with RF biasing capability to generate a higher density plasma at the wafer edge. In addition, a grounding mesh 247 is embedded within the body 202 of the electrostatic chuck 152 to prevent RF coupling with the processing chamber 100. Low-frequency pulses of 0.2 Hz to 20 Hz from the bias power supply 117 provide an RF bias that increases the deposition density on the substrate for in-situ processing and / or etching.

[0046] Advantageously, the electrostatic chuck 152 can be used for both PECVD / PEALD deposition and in-situ etching / processing processes while having excellent wafer edge coverage using the active far-end electrode 119. The electrostatic chuck 152 also reduces the footprint because it has an embedded grounding electrode that helps prevent plasma ignition in the gap, i.e., arc discharge, as seen in previous approaches to conventional grounding of electrostatic chucks.

[0047] Figure 3 shows a schematic partial side view of a substrate support 124 according to another example of the present disclosure. The substrate support 124 is substantially as described above with respect to Figures 2A and 2B. In yet another example of the substrate support 124, a cooling base 310 is located below the second side of the electrostatic chuck 152.

[0048] The cooling base 310 may be coupled to the electrostatic chuck via mechanical fasteners. For example, the cooling base 310 may be bolted to the electrostatic chuck 152. Alternatively, the cooling base 310 may be coupled to the electrostatic chuck by chemical bonding such as adhesive, or by diffusion or welding.

[0049] In some examples, the cooling base 310 is made of a conductive material, such as aluminum (Al). In some examples, the cooling base 310 can be coupled to a bias power supply 117. The cooling base 310 may be energized by the bias power supply 117 and used as an electrode to bias the plasma.

[0050] To lower the operating temperature of the electrostatic chuck 152, a coolant can be circulated through the cooling base 310. Advantageously, the aforementioned substrate support can operate further at temperatures below 600°C, such as approximately 200°C.

[0051] While the above describes embodiments of the present invention, other embodiments and further embodiments of the present invention can be devised without departing from the basic scope of the present invention, and the scope of the present invention is determined by the following claims.

Claims

1. A ceramic electrostatic chuck having a body, wherein the body has an outer diameter, a first side surface configured to support a substrate, and a second side surface opposite to the first side surface, and the body is Chuck electrode and An active far end electrode positioned adjacent to the chuck electrode, A floating mesh positioned below the chuck electrode, A heating element positioned below the floating mesh, Displaced below the heating element, and adjacent to the second side surface, a ground mesh and Equipped with, A substrate support for use in a substrate processing chamber.

2. The chuck electrode and the active far end electrode may be located at a distance of approximately 1.5 mm to approximately 3 mm below the first side surface. The substrate support according to claim 1.

3. The substrate support according to claim 1, wherein the floating mesh is spaced about 2 mm to about 3 mm apart from the outer diameter.

4. A spoke mesh coupled to the active far end electrode and positioned below the active far end electrode and the chuck electrode, wherein the floating mesh is positioned at a distance of approximately 0.5 mm to approximately 2.0 mm below the spoke mesh. The substrate support according to claim 2, further comprising:

5. The substrate support according to claim 3, wherein the heating element is positioned at a distance of approximately 4 mm to approximately 6 mm below the floating mesh.

6. The substrate support according to claim 5, wherein the grounding mesh is positioned at a distance of approximately 3 mm to approximately 5 mm below the heating element.

7. The substrate support according to claim 6, wherein the grounding mesh may be positioned at a distance of approximately 1.5 mm to approximately 3.5 mm above the second side surface.

8. The substrate support according to claim 1, wherein the chuck electrode is configured to supply coupled low-frequency pulses of 0.2 Hz to 20 Hz.

9. The substrate support according to claim 8, wherein the active far-end electrode is configured to operate independently of the chuck electrode.

10. The substrate support according to claim 9, wherein the active far-end electrode is configured to operate from a power supply coupled to the chuck electrode.

11. Chamber body and A substrate support disposed within the chamber body and A processing chamber comprising, wherein the substrate support is A ceramic electrostatic chuck having a body, wherein the body has an outer diameter, a first side configured to support a substrate, and a second side opposite to the first side, and the body is Chuck electrode and An active far end electrode positioned adjacent to the chuck electrode, A floating mesh positioned below the chuck electrode, A heating element positioned below the floating mesh, Displaced below the heating element, and adjacent to the second side surface, a ground mesh and Equipped with, Processing chamber.

12. The processing chamber according to claim 10, wherein the chuck electrode and the active far end electrode may be located at a distance of approximately 1.5 mm to approximately 3 mm below the first side surface.

13. The processing chamber according to claim 11, wherein the floating mesh is spaced about 2 mm to about 3 mm apart from the outer diameter.

14. A spoke mesh coupled to the active far end electrode and positioned below the active far end electrode and the chuck electrode, wherein the floating mesh is positioned at a distance of approximately 0.5 mm to approximately 2.0 mm below the spoke mesh. The processing chamber according to claim 12, further comprising:

15. The processing chamber according to claim 12, wherein the heating element is positioned at a distance of approximately 4 mm to approximately 6 mm below the floating mesh.

16. The processing chamber according to claim 15, wherein the grounding mesh is positioned at a distance of approximately 3 mm to approximately 5 mm below the heating element.

17. The processing chamber according to claim 16, wherein the grounding mesh may be positioned at a distance of approximately 1.5 mm to approximately 3.5 mm above the second side surface.

18. A power supply that provides low-frequency pulses of 0.2 Hz to 20 Hz to the chuck electrode. The processing chamber according to claim 11, further comprising:

19. The processing chamber according to claim 17, wherein the active far-end electrode is configured to operate independently of the chuck electrode.

20. The processing chamber according to claim 18, wherein the active far-end electrode is connected to the power supply.

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