Elements, electronic devices, electronic equipment and systems, and methods for manufacturing piezoelectric films.

Abstract

To provide an element, electronic device, electronic apparatus, and system that have excellent flexural strength and a laminate structure that makes it possible to obtain them industrially advantageously.SOLUTION: A laminate structure is obtained by: laminating a compound film, as a first intermediate film, containing Hf on a crystal substrate; next, laminating a metal film, as a second intermediate film, containing metal transforming into a martensite phase by heat treatment or processing; and, after that, laminating a piezoelectric film directly or through another layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a laminated structure, an element, an electronic device, an electronic apparatus, and a system.

Background Art

[0002] Piezoelectric thin films made of lead zirconate titanate (Pb(Zr,Ti)O3) (hereinafter also referred to as PZT) having excellent piezoelectricity and ferroelectricity have been studied, and piezoelectric thin films are applied to memory elements such as non-volatile memories (FeRAM), and MEMS (Micro Electro Mechanical Systems) technologies such as inkjet heads and acceleration sensors.

[0003] In recent years, on a Si substrate oriented in (100), by forming a Pt film oriented in (200) through a ZrO2 film oriented in (200) or the like, a piezoelectric film having good piezoelectric characteristics is formed on the Pt film. This has been studied (Patent Document 1). However, there is a problem that cracks or fractures occur in the crystal substrate or the like due to bending stress during film formation or when used as a piezoelectric element, and it is still not satisfactory in terms of durability and long-term use, and a piezoelectric element resistant to bending stress has been awaited.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] An object of the present invention is to provide an element, an electronic device, an electronic apparatus, and a system having excellent bending strength, and a laminated structure that can be industrially advantageously obtained.

Means for Solving the Problems

[0006] As a result of diligent research to achieve the above objective, the present inventors have discovered that a piezoelectric element with excellent bending strength can be easily realized by laminating a compound film containing Hf as a first interlayer on a crystalline substrate, then laminating a metal film containing Fe as a second interlayer, and then laminating a piezoelectric film by crystal growth. They have found that such an element can solve the above-mentioned conventional problems all at once. Furthermore, after obtaining the above findings, the inventors conducted further studies and completed the present invention.

[0007] In other words, the present invention relates to the following invention. [1] A laminated structure in which a metal film containing a metal as the main component and a piezoelectric film are laminated directly or via other layers, The laminated structure is characterized in that the metal is a metal that undergoes martensitic transformation by heat treatment or processing, and the piezoelectric film and the metal film are each oriented in substantially the same crystal axis direction. [2] The laminated structure according to [1], wherein the piezoelectric film and the metal film are each oriented in the (100) direction. [3] A flexible laminated structure according to [1] or [2]. [4] The laminated structure according to any one of [1] to [3], wherein the piezoelectric film is a single crystal film. [5] The laminated structure according to any one of [1] to [4], wherein the metal comprises Fe. [6] The laminated structure according to any one of [1] to [5], wherein the metal comprises Cr. [7] The laminated structure according to any one of the above [1] to [6] further comprising a conductive oxide film or a conductive nitride film. [8] The laminated structure according to [7], wherein the conductive oxide film is laminated between the metal film and the piezoelectric film, and the conductive oxide film comprises Sr and / or Ru. [9] The laminated structure according to [7] or [8], wherein the metal film is laminated on the conductive nitride film, and the conductive nitride film contains Hf.

[10] An element comprising a stacked structure, wherein the stacked structure is the stacked structure described in any of [1] to [9] above.

[11] An electronic device, electronic device or system comprising a laminated structure or elements, wherein the laminated structure is a laminated structure according to any one of claims 1 to 9, and the elements are elements according to claim 10.

[12] A method for manufacturing a piezoelectric film, comprising laminating a first interlayer on a crystalline substrate, then laminating a second interlayer, and then laminating a piezoelectric film by crystal growth, either directly or through other layers, A method for manufacturing a piezoelectric film, characterized in that the first interlayer is a compound film containing Hf, and the second interlayer is a metal film containing a metal that undergoes martensitic transformation by heat treatment or processing.

[13] The manufacturing method according to

[12] , which includes the step of peeling the crystal substrate from the piezoelectric film after laminating the piezoelectric film.

[14] The manufacturing method according to

[13] , wherein the crystal substrate is peeled off by wet etching.

[15] The manufacturing method according to

[13] or

[14] , further comprising the step of peeling the crystal substrate from the piezoelectric film and then peeling the first interlayer film from the piezoelectric film.

[16] The manufacturing method according to

[15] , further comprising the step of peeling off the first interlayer from the piezoelectric film and then peeling off the second interlayer from the piezoelectric film.

[17] A method for manufacturing an electronic device or electronic equipment, comprising the step of laminating a piezoelectric film on a crystalline substrate via at least one interlayer by crystal growth, wherein the interlayer contains a metal that undergoes martensitic transformation by heat treatment or processing, and after laminating the piezoelectric film, the crystalline substrate is peeled off from the piezoelectric film. [Effects of the Invention]

[0008] The elements, electronic devices, electronic equipment, and systems of the present invention have excellent bending strength, and the laminated structures of the present invention have the advantage of enabling industrially advantageous manufacturing of these. [Brief explanation of the drawing]

[0009] [Figure 1] This is a diagram schematically showing an example of a preferred embodiment of the laminated structure of the present invention. [Figure 2] This is a diagram showing the XRD diffraction pattern in an example. [Figure 3] This is a diagram explaining a test piece of an example product in a test example. [Figure 4] This is a diagram explaining a test piece of a comparative example product in a test example. [Figure 5] This is a diagram showing the bending strength test results in a test example. [Figure 6] This is a diagram schematically showing a preferred example of an embodiment of a MEMS transducer in the present invention. [Figure 7] As a preferred application example of the present invention to a fluid discharge device, this is a diagram schematically showing an example of a partial cross-sectional view of a wafer provided with a piezoelectric actuator. [Figure 8] This is a diagram schematically showing a film forming apparatus preferably used in an example.

Mode for Carrying Out the Invention

[0010] The laminated structure of the present invention is a laminated structure in which a metal film containing a metal as a main component and a piezoelectric film are laminated directly or via another layer, the metal is a metal that undergoes a martensitic transformation by heat treatment or processing, and the piezoelectric film and the metal film are oriented in substantially the same crystal axis direction. Here, the "main component" only needs to be a ratio of the atomic ratio of the metal in the metal film to be 0.5 or more. In the present invention, it is preferable that the atomic ratio of the metal to all metal elements in the metal film is 0.7 or more, and more preferably 0.8 or more.

[0011] In the present invention, it is preferable that the piezoelectric film and the metal film are oriented in the (100) direction. Furthermore, in the present invention, it is preferable that the laminated structure is flexible. Such a laminated structure can exhibit better piezoelectric properties at high frequencies and the like. Furthermore, in the present invention, it is preferable that the piezoelectric film is a single crystal film because it has better piezoelectric properties and durability. In addition, in the present invention, it is preferable that the piezoelectric film is a PTO film or a PZT film. Furthermore, in the present invention, it is preferable that the metal contains Fe, and more preferably that it contains Cr. According to such preferred ranges, better crystal growth can be achieved, and a higher quality crystalline film can be obtained. Furthermore, in the present invention, it is preferable that a conductive oxide film is laminated between the metal film and the piezoelectric film, and that the metal film is laminated on a conductive nitride film. When the conductive oxide film is laminated, it is preferable that the conductive oxide film contains Sr and / or Ru, and when the conductive nitride film is laminated, it is preferable that the conductive nitride film contains Hf.

[0012] The metal is not particularly limited as long as it undergoes martensitic transformation by heat treatment or processing, and it may be a known metal. Examples of the metal that undergoes martensitic transformation include, for example, Fe-Cr-Ni, Fe, Fe-Cr-Ni-Cu-Nb, Fe-Ni, Fe-Ni-Co, Fe-Si, Fe-Cr, Fe-Mn, Fe-Mn-C, Fe-Mn-Ni, Fe-Mn-Cr, Fe-C, Fe-N, Fe-Ni-C, Fe-Cr-C, Fe-Cu-C, Fe-Si-C, Fe-Cr-Ni-C, Co, Co-Ni, Co-Fe, Mn-Cu, In-Tl, In-Tl-Li, Na, Zr, Tl, Hf, Ti, Ti-Al, Ti-Cu, Ti-Cr, Ti-Fe, Ti-Mn, Ti-Mo, Ti-V, Ti-Zr, Ti-Al-V, Zr-U, Cu-Al-Ni, Cu-Al, Ag-Cd, Au-Cd, Au-Cd-Cu, Li, Li-Mg, Cu-Zn, U, U-Cr, Hg, and the like. In the present invention, it is preferable that the metal contains Fe, Cr or Ni, more preferably contains Fe and Cr, and most preferably is stainless steel. According to such a preferable range, the bending strength can be made more excellent.

[0013] The so-called "oriented in the (100) direction" means that it is sufficient if the crystal orientation angle detected by the X-ray diffraction method is oriented in the (100) direction. More specifically, for all the peaks of the metal film detected by the X-ray diffraction method, it is sufficient if the peak ratio in the (100) direction is 50% or more, and preferably the peak ratio is 90% or more.

[0014] In the present invention, it is preferable that the film thickness of the metal film is 100 μm or less, and more preferably the film thickness is 1 μm to 10 μm. According to such a preferable range, it becomes more excellent as an intermediate film for crystal growth of the functional film.

[0015] The laminated structure can be easily obtained by laminating a compound film containing Hf as a first interlayer on a crystalline substrate, then laminating a metal film containing a metal that undergoes martensitic transformation by heat treatment or processing as a second interlayer, and then laminating a piezoelectric film (hereinafter also referred to as the "piezoelectric layer") directly or via another layer by crystal growth. Examples of known crystal growth means in the crystal growth include the PLD method or the CVD method. In the present invention, it is preferable to include a step of peeling the crystalline substrate from the piezoelectric film after laminating the piezoelectric film. The peeling means only needs to be able to peel the crystalline substrate from the piezoelectric film, and known peeling means may be used. The peeling means may be a means for removing the crystalline substrate, and known removal means such as dry etching and wet etching can also be used for peeling as long as they do not hinder the objective of the present invention. In the present invention, it is preferable to peel the crystalline substrate by wet etching. Known etching agents such as strong alkalis can be suitably used as the wet etching means.

[0016] The crystalline substrate (hereinafter also simply referred to as "substrate") is not particularly limited as long as it does not hinder the objectives of the present invention, and may be a known crystalline substrate. It may be an organic compound or an inorganic compound. In the present invention, it is preferable that the crystalline substrate contains an inorganic compound. In the present invention, it is preferable that the substrate has crystals on part or all of its surface, more preferably that it is a crystalline substrate having crystals on all or part of the main surface on the crystal growth side, and most preferably that it is a crystalline substrate having crystals on all of the main surface on the crystal growth side. The crystal is not particularly limited as long as it does not hinder the objectives of the present invention, and the crystal structure is not particularly limited, but it is preferable that it is a cubic, tetragonal, trigonal, hexagonal, orthorhombic, or monoclinic crystal, and more preferably that it is a crystal oriented to (100) or (200). The crystalline substrate may also have an off-angle, and examples of the off-angle include an off-angle of 0.2° to 12.0°. Here, "off-angle" refers to the angle between the substrate surface and the crystal growth surface. The substrate shape is not particularly limited as long as it is plate-shaped and serves as a support for the epitaxial film. It may be an insulating substrate or a semiconductor substrate, but in the present invention, the substrate is preferably a Si substrate, more preferably a crystalline Si substrate, and most preferably a crystalline Si substrate oriented to (100). Examples of the substrate material include, in addition to a Si substrate, one or more metals belonging to groups 3 to 15 of the periodic table or oxides of these metals. The shape of the substrate is not particularly limited and may be substantially circular (e.g., round, elliptical, etc.) or polygonal (e.g., triangular, square, rectangular, pentagon, hexagon, heptagon, octagon, nonagon, etc.), and various shapes can be suitably used. Furthermore, in the present invention, a large-area substrate can be used, and by using such a large-area substrate, the area of ​​the epitaxial film can be increased.

[0017] Furthermore, in the present invention, it is preferable that the crystal substrate has a flat surface, but it is also preferable that the crystal substrate has an uneven shape on part or all of its surface, as this can improve the quality of crystal growth of the epitaxial film. The crystal substrate having the uneven shape only needs to have an uneven portion consisting of recesses or protrusions on part or all of its surface, and the uneven portion is not particularly limited as long as it consists of protrusions or recesses, and may be an uneven portion consisting of protrusions, an uneven portion consisting of recesses, or an uneven portion consisting of both protrusions and recesses. In addition, the uneven portion may be formed from regular protrusions or recesses, or from irregular protrusions or recesses. In the present invention, it is preferable that the uneven portion is formed periodically, and more preferably that it is patterned periodically and regularly. The shape of the uneven portion is not particularly limited, and examples include stripe-like, dot-like, mesh-like, or random-like, but in the present invention, dot-like or stripe-like is preferred, and dot-like is more preferred. Furthermore, if the uneven surfaces are patterned periodically and regularly, it is preferable that the pattern shape of the uneven surfaces be a polygonal shape such as a triangle, quadrilateral (e.g., square, rectangle, or trapezoid), pentagon or hexagon, circular, or elliptical. When the uneven surfaces are formed in a dot shape, it is preferable that the lattice shape of the dots be a grid shape such as a square grid, rhombic grid, triangular grid, or hexagonal grid, and more preferably a triangular grid. The cross-sectional shape of the recesses or protrusions of the uneven surfaces is not particularly limited, but examples include a U-shape, inverted U-shape, wave shape, or a polygonal shape such as a triangle, quadrilateral (e.g., square, rectangle, or trapezoid), pentagon or hexagon. The thickness of the crystal substrate is not particularly limited, but is preferably 50 to 2000 μm, and more preferably 100 to 1000 μm.

[0018] The piezoelectric layer is not particularly limited as long as it is a piezoelectric layer made of a piezoelectric material. The piezoelectric material may be a known piezoelectric material, but in the present invention, it is preferable that the piezoelectric material contains Pb and Ti. The semiconductor layer is not particularly limited as long as it is a semiconductor layer made of a semiconductor material. The semiconductor may be a known semiconductor, but in the present invention, it is preferable that the semiconductor contains Si, SiC, GaN, or Ga2O3. In this specification, the terms "film" and "layer" may be interchanged depending on the case or situation.

[0019] Furthermore, in the present invention, it is preferable to laminate a first interlayer on a crystal substrate, then laminate a second interlayer, and then laminate the piezoelectric layer or the semiconductor layer either directly or via another layer. Examples of the other layer include a metal film, a conductive oxide film, or a conductive nitride film. Examples of the conductive oxide film include a conductive oxide film containing Sr and / or Ru. Examples of the conductive nitride film include a conductive nitride film containing Hf. The metal film in the other layer is preferably made of a metal different from the metal, such as gold, silver, platinum, palladium, silver-palladium, copper, nickel, or alloys thereof. The aforementioned lamination methods can all be used to laminate using known film-forming methods. In the present invention, it is preferable that the film-forming method is vapor deposition (including MBE) or sputtering. The thickness of each layer is not particularly limited, but is preferably 10 nm to 100 μm, and more preferably 50 nm to 30 μm.

[0020] The laminated structure obtained as described above can be suitably used as a piezoelectric element or semiconductor element, etc., using known means. Furthermore, the element can be suitably used in electronic devices according to conventional methods. For example, the laminated structure can be used as a piezoelectric element, connected to a power supply or electrical / electronic circuit, mounted on a circuit board, or packaged to constitute various electronic devices. In the present invention, it is preferable that the electronic device is a piezoelectric device, and can be used as a piezoelectric device in electronic devices such as inkjet printer heads, microactuators, gyroscopes, and motion sensors. Also, for example, by connecting an amplifier and a rectifier circuit and packaging them, they can be used in various sensors such as magnetic sensors. It can also be applied to constant voltage driven memory, and for example, by connecting an energy storage element and a rectifier power management circuit, it becomes an energy conversion device (energy harvester) that generates power from an external magnetic field or vibration. The energy conversion device can be incorporated and used in power supply systems and wearable terminals (earphones / hearable devices, smartwatches, smart glasses, smart contact lenses, cochlear implants, cardiac pacemakers, etc.). In the present invention, it is preferable to use the laminated structure in applications such as smart glasses, AR headsets, MEMS mirrors for LiDAR systems, piezoelectric MEMS ultrasonic transducers (PMUTs) for advanced medical applications, and piezo heads for commercial and industrial 3D printers.

[0021] The aforementioned electronic device is suitably used in electronic devices in accordance with conventional methods. Besides the electronic devices described above, the device can be applied to a variety of other electronic devices. More specifically, suitable examples include liquid dispensing heads, liquid dispensing devices, vibration wave motors, optical instruments, vibration devices, imaging devices, piezoelectric acoustic components, and audio playback devices, audio recording devices, mobile phones, and various information terminals.

[0022] Furthermore, the aforementioned electronic devices can also be applied to systems in accordance with conventional laws, and such systems include, for example, sensor systems. [Examples]

[0023] (Example 1) The crystal growth surface of a Si substrate (100) was treated with RIE, and an HfZrN single crystal was formed on the Si substrate by vapor deposition in the presence of nitrogen, causing a thermal reaction between the metal of the deposition source and the nitrogen. The conditions for the vapor deposition method during this film formation were as follows. Vapor deposition source: Hf, Zr Voltage: 3.5~4.75V Pressure: 3 × 10 -2 ~6×10 -2 Pa Substrate temperature: 450~700℃

[0024] Figure 8 shows the deposition apparatus used for depositing HfZrN single crystals. The deposition apparatus in Figure 8 is equipped with at least a crucible containing metal sources 1101a to 1101b, grounds 1102a to 1102h, ICP electrodes 1103a to 1103b, cut filters 1104a to 1104b, DC power supplies 1105a to 1105b, RF power supplies 1106a to 1106b, lamps 1107a to 1107b, Ar source 1108, reactive gas source 1109, power supply 1110, substrate holder 1111, substrate 1112, cut filter 1113, ICP ring 1114, vacuum chamber 1115, and rotating shaft 1116. Note that the ICP electrodes 1103a to 1103b in Figure 8 have a substantially concave or parabolic shape that curves toward the center of the substrate 1112.

[0025] As shown in Figure 8, the substrate 1112 is secured on the substrate holder 1111. Then, the rotating shaft 1116 is rotated using the power supply 1110 and a rotating mechanism (not shown) to rotate the substrate 1112. The substrate 112 is also heated by lamps 1107a to 1107b, and the inside of the vacuum chamber 1115 is evacuated to create a vacuum or reduced pressure using a vacuum pump (not shown). After that, Ar gas is introduced into the vacuum chamber 1115 from the Ar source 1108, and the surface of the substrate 1112 is cleaned by forming argon plasma on the substrate 1112 using DC power supplies 1105a to 1105b, RF power supplies 1106a to 1106b, ICP electrodes 1103a to 1103b, cut filters 1104a to 1104b, and grounds 1102a to 1102h.

[0026] Ar gas is introduced into the vacuum chamber 1115, and a reactive gas is also introduced using the reactive gas source 1109. At this time, the lamp heaters, lamps 1107a to 1107b, are alternately turned on and off, which allows for the formation of a higher quality crystal growth film.

[0027] Next, a SUS304 single crystal film was deposited in the same manner as described above, except that Fe, Cr, and Ni were used as the metals for the deposition source.

[0028] Next, a platinum (Pt) metal film was formed as a conductive film on a single-crystal film of a crystalline metal oxide by sputtering. The conditions used for this process are shown below. Equipment: ULVAC QAM-4 sputtering system Pressure: 1.20 × 10 -1 Pa Target: Pt Power: 100W(DC) Thickness: 100nm Substrate temperature: 450~600℃

[0029] Next, an SRO film was formed on the conductive film by sputtering. The conditions used for this process are shown below. Equipment: ULVAC QAM-4 sputtering system Power: 150W (RF) Gas: Ar Pressure: 1.8 Pa Substrate temperature: 600℃ Thickness: 20nm

[0030] Next, a PbTiO3 film was deposited on the SRO film as a piezoelectric film. The resulting laminated structure exhibited good adhesion and crystallinity. Furthermore, the crystal structure of the crystalline substrate, the single-crystal film of the crystalline metal oxide, and the conductive film of the laminated structure was measured using an X-ray diffractometer. Figure 2 shows the XRD measurement results. As is clear from Figure 2, a SUS304 single-crystal film with good crystallinity was formed, and the crystallinity of the PbTiO3 film and other components was also good.

[0031] After forming a PbTiO3 film, the Si substrate was removed by wet etching using sodium hydroxide, thereby exfoliating the Si substrate from the PbTiO3 film. The resulting laminated structure was flexible.

[0032] (Example test) As a test example, cantilever beams of micro-elements as shown in Figures 3 and 4 were fabricated using FIB FB2100 (Hitachi High-Technologies Corporation), and their fracture strength characteristics were evaluated using the Nanoindenter NanoTest Xtreme (Micro Materials Corporation), resulting in the findings shown in Figure 5. From Figure 5, the fracture strength of Si was approximately 1 GPa, showing a nearly constant value. Considering that the bending strength of Si single-crystal bulk material is approximately 300 MPa (according to a paper), it was found that micromaterials possess significant strength. Furthermore, in the case of SUS304 single-crystal thin films, the fracture strength was approximately 5 GPa, which is about five times the bending strength of Si single crystals. This suggests that using SUS304 single-crystal thin films as beams (movable parts, equivalent to the active layer of an SOI substrate) in MEMS devices can be expected to significantly improve not only the displacement of MEMS devices but also their lifespan characteristics.

[0033] (Examples of application) Examples of applications of the obtained laminated structure will be described in more detail below with reference to the figures, but the present invention is not limited to these examples. In addition, unless otherwise specified, piezoelectric devices and the like can be manufactured from the laminated structure using known means.

[0034] Figure 6 shows an embodiment of an acoustic MEMS transducer constituting a MEMS microphone in which the laminated structure is suitably used in the present invention. The MEMS transducer can constitute an acoustic emission device (for example, a speaker).

[0035] The MEMS microphone configured in the acoustic MEMS transducer shown in Figure 6 is a cantilever-type MEMS microphone and comprises a Si substrate 21 having two cantilever beams 28A and 28B and a cavity 30. Each cantilever beam 28A and 28B is fixed to the substrate 21 at its respective end, and a gap 9 is provided between the cantilever beams 8A and 8B. The cantilever beams 8A and 8B are formed by a laminated structure including, for example, multiple piezoelectric layers (PZT films) 26a and 26b, and are arranged alternately with multiple electrode layers, namely Pt films 24a, 24b, and 24c and SRO films 25a, 25b, 25c, and 25d. The Pt film 24a is provided on a SUS film 23, and an HfZrN film 23 is provided on the SUS film 23. Compared to using SiO2 or SiN, using the HfZrN film 23 results in superior adhesion and crystallinity to the Si substrate, further improving crystallinity up to multiple layers, and also providing superior piezoelectric properties and durability.

[0036] Figure 7 shows an example of an application of the laminated structure in the present invention to a fluid discharge device that can be suitably used in printing applications, particularly in the form of an inkjet print head. Specifically, it shows a cross-sectional view of a part of a wafer equipped with a piezoelectric actuator that includes Pt films 34a, 34b and SRO films 35a, 35b as electrode layers and a PZT film 36 as a piezoelectric film. In addition to the piezoelectric actuator, the wafer in Figure 7 is equipped with a chamber 41 for containing fluid. The chamber 41 is configured to take in fluid from a tank (not shown) via a flow path 40. The wafer in Figure 10 includes a Si substrate 31, on which HfZrN films 32 and SUS films 33 are laminated and face the chamber 41. In Figure 10, by using HfZrN films 32, adhesion to the Si substrate and crystallinity are better than when using SiO2 or SiN, and the crystallinity is further improved up to multiple layers, and furthermore, piezoelectric properties and durability are also better. The HfZrN film 32 has a rectangular shape, for example, in the top view (not shown), and this shape may be any of the following: a square, a rectangle, a rectangle with rounded corners, a parallelogram, etc.

[0037] On the SUS film 33, a Pt film 34a, an SRO film 35a, a piezoelectric film (PZT film) 36, an SRO film 35b, and a Pt film 34b are sequentially laminated to constitute a piezoelectric actuator. The piezoelectric actuator further comprises electrodes 34a and 35a, a piezoelectric film 36, and an insulating film 37 extending over electrodes 34b and 35b. The insulating film 37 contains a dielectric material used for electrical insulation, which may be a known dielectric material, such as an SiO2 layer, a SiN layer, or an Al2O3 layer. The thickness of the insulating layer containing the insulating film as a constituent material is not particularly limited, but is preferably between approximately 10 nm and approximately 10 μm. The conductive path 39 is provided on the insulating layer (insulating film) 37 and contacts electrodes 34a and 35a and electrodes 34b and 35b, respectively, allowing selective access during use. The conductive path is composed of any known conductive material, and suitable examples of such conductive materials include aluminum (Al). The passivation layer 42 is provided on the insulating layer 37, electrodes 34b and 35b, and the conductive path 39. The passivation layer 42 is composed of a dielectric material used for passivation of the piezoelectric actuator, and such dielectric material is not particularly limited and may be any known dielectric material. Suitable examples of the dielectric material include SiN or SION (silicon oxynitrate). The thickness of the passivation layer is not particularly limited, but is preferably between approximately 0.1 μm and approximately 3 μm. Similarly, the conductive pad 38 is provided along the piezoelectric actuator and is electrically connected to the conductive path 39. The passivation layer 42 functions as a barrier layer to protect the piezoelectric body from humidity and other elements. [Industrial applicability]

[0038] The laminated structure of the present invention is suitably used as an electronic device, such as a piezoelectric device, and is suitably used in electronic devices, sensor systems, and the like. [Explanation of symbols]

[0039] 1. Crystal substrate (Si substrate) 2 HfZrN film 3 SUS membrane (FeCrNi membrane) 4 Pt membrane 5 SRO membrane 6. Piezoelectric layer (PbTiO film) 21. Crystal Substrate (Si Substrate) 22 HfZrN film 23 SUS membrane 24a Pt membrane 24b Pt membrane 24c Pt membrane 25a SRO membrane 25b SRO membrane 25c SRO membrane 25d SRO membrane 26a PZT membrane 26b PZT membrane 28A Cantilever Beam 28B Cantilever Beam 29 gaps 30 cavities 31. Crystal Substrate (Si Substrate) 32 HfZrN film 33 SUS membrane 34a Pt membrane 34b Pt membrane 35a SRO membrane 35b SRO membrane 36 PZT membrane 37 Insulating Film 38 conductive pads 39 Conductive Path 40 flow channels 41 Chambers 42 Passivation Layer 1101a~101b Metal source 1102a~102j Earth 1103a~103b ICP electrode 1104a~104b Cut Filter 1105a~105b DC power supply 1106a~106b RF power supply 1107a~107b Lamp 1108 Ar source 1109 Reactive gas source 1110 Power supply 1111 Circuit board holder 1112 circuit board 1113 Cut Filter 1114 ICP ring 1115 Vacuum chamber 1116 Rotation axis

Claims

1. An element comprising a first portion and a second portion adjacent to the first portion, The first part is, A crystalline substrate which is a Si substrate, A first layer is laminated on the crystalline substrate and consists of a nitride containing Hf and / or Zr, A second layer is laminated on the first layer and consists of a first metal film of a first metal that undergoes martensitic transformation by heat treatment or processing, It has, The second part is, A third layer consisting of a second metal film of the same type as the first metal film, A fourth layer is laminated on the third layer and is made of a second metal different from the first metal, A fifth layer made of a conductive metal oxide laminated on the fourth layer, A piezoelectric layer laminated on the fifth layer, It has, The second portion does not include a substrate of the same type as the crystal substrate, nor a layer of the same type as the first layer. A cavity is formed beneath the third layer. The third layer is formed integrally with the second layer, The crystal substrate, the first layer, the second layer, and the third layer are each oriented in substantially the same crystal axis direction. The second part is an element characterized by having flexibility.

2. The element according to claim 1, wherein the first metal comprises Fe, Cr, or Ni.

3. The element according to claim 1, wherein the crystal axis direction is the (100) direction.

4. The element according to claim 1, wherein the second metal includes Pt.

5. The element according to claim 4, wherein the conductive metal oxide comprises Sr and / or Ru.

6. The element according to claim 5, wherein the piezoelectric layer comprises Pb and Ti.

7. An electronic device, electronic device or system including an element, wherein the element is the element described in any one of Claims 1 to 6.

8. A method for manufacturing a piezoelectric film, comprising laminating a first interlayer on a crystalline substrate, then laminating a second interlayer, and then laminating a piezoelectric film by crystal growth, either directly or through other layers, The first interlayer is a compound film containing Hf, and the second interlayer is a metal film containing a metal that undergoes martensitic transformation by heat treatment or processing. The method for manufacturing the piezoelectric film is as follows: After laminating the piezoelectric film, the step of peeling the crystal substrate from the piezoelectric film, The steps include: peeling the crystal substrate from the piezoelectric film, and then peeling the first interlayer from the piezoelectric film; Includes, A method for manufacturing a piezoelectric film, characterized in that the piezoelectric film is flexible.

9. The method for manufacturing a piezoelectric film according to claim 8, wherein the removal of the crystal substrate is performed by wet etching.

10. A method for manufacturing a piezoelectric film according to claim 8 or 9, comprising the step of peeling off the first interlayer from the piezoelectric film, and then peeling off the second interlayer from the piezoelectric film.

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