Substrate processing method

Abstract

To provide a substrate processing method for processing a substrate including a first principal surface and a second principal surface at an opposite side of the first principal surface, the substrate processing method being capable of suppressing contamination of an inner region inside of a peripheral edge region on the first principal surface when cleaning the peripheral edge region of the first principal surface of the substrate.SOLUTION: A polymer film is formed so as to expose a peripheral edge region of a first principal surface of a substrate and cover an inner region which is positioned inside of the peripheral edge region on the first principal surface and adjacent to the peripheral edge region (polymer film formation step). After the polymer film formation step, a first cleaning fluid is supplied onto the first principal surface so as to maintain the polymer film on the first principal surface (first cleaning fluid supply step). After the first cleaning fluid supply step, a removal liquid which dissolves the polymer film more easily than the first cleaning fluid is supplied onto the first principal surface (removal liquid supply step).SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] This invention relates to a substrate processing method for processing a substrate.

[0002] Substrates to be processed include, for example, semiconductor wafers, substrates for FPD (Flat Panel Display) such as liquid crystal display devices and organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Background Art

[0003] Patent Document 1 below discloses a substrate processing method in which an unnecessary thin film adhering to the upper surface bevel portion of a substrate is removed with a chemical solution, and then the chemical solution and film residues adhering to the bevel portion are washed away with a rinse solution.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the method disclosed in Patent Document 1, when cleaning the upper surface bevel portion of the substrate, the chemical solution or rinse solution that collides with and bounces off the upper surface bevel portion of the substrate may adhere to the area inside the bevel portion on the upper surface of the substrate, and the upper surface of the substrate may be contaminated.

[0006] Therefore, one object of this invention is to provide a substrate processing method capable of suppressing contamination of the inner region inside the peripheral region on the first main surface when cleaning the peripheral region of the first main surface of a substrate having a first main surface and a second main surface opposite to the first main surface. [Means for solving the problem]

[0007] One embodiment of this invention provides a substrate processing method for processing a substrate having a first main surface and a second main surface opposite to the first main surface.

[0008] The substrate processing method includes a polymer film forming step of forming a polymer film so as to expose the peripheral region of the first main surface and cover the inner region located inside the peripheral region on the first main surface and adjacent to the peripheral region; a first cleaning liquid supply step of supplying a first cleaning liquid to the first main surface after the polymer film forming step so as to maintain the polymer film on the first main surface; and a removal liquid supply step of supplying a removal liquid to the first main surface after the first cleaning liquid supply step which is more likely to dissolve the polymer film than the first cleaning liquid.

[0009] According to this method, a polymer film is formed on the first main surface of the substrate such that the peripheral region of the first main surface is exposed. A first cleaning solution is supplied to the peripheral region of the first main surface so as to maintain the polymer film on the first main surface, and then a removal solution is supplied to the first main surface. Therefore, the peripheral region of the first main surface is cleaned with the first cleaning solution, which is relatively ineffective in dissolving the polymer film, to remove particles and other objects to be removed from the peripheral region of the first main surface, and then the polymer film can be removed from the first main surface with a removal solution that is relatively effective in dissolving the polymer film.

[0010] As a result, the peripheral region of the first main surface can be cleaned while suppressing contamination of the inner region of the first main surface.

[0011] In one embodiment of this invention, the removal liquid supply step involves supplying a removal liquid that is more likely to dissolve the polymer film than the first cleaning liquid to the first main surface after the first cleaning liquid supply step. After the polymer film formation step Forming a pattern on the polymer film Perform the necessary processing without 、 The polymer film is removed from the first main surface. In one embodiment of this invention, the polymer film forming step includes a coating step of forming the polymer film having a peripheral covering portion that covers the peripheral region and an inner covering portion that covers the inner region, and a peripheral exposure step of exposing the peripheral region by removing the peripheral covering portion from the first main surface.

[0012] According to this method, after forming a polymer film having a peripheral coating portion and an inner coating portion, the peripheral region of the first main surface is exposed by removing the peripheral coating portion. In other words, after forming a polymer film over a wide area on the first main surface, the inner region can be selectively coated with the polymer film by removing the unnecessary parts.

[0013] In one embodiment of this invention, the peripheral exposure step comprises an exposure step of exposing the peripheral coating portion, and, after the exposure step, a second cleaning liquid, which is more easily dissolved than the inner coating portion, is discharged from a second cleaning liquid discharge member toward the first main surface. supply Includes the process.

[0014] In this method, after the exposure process, the second cleaning solution is discharged toward the peripheral region. The exposed peripheral coating is more easily dissolved in the second cleaning solution than the inner coating. Therefore, the peripheral coating can be removed from the first main surface while maintaining the inner coating in the inner region. The peripheral coating removed by the second cleaning solution is the exposed portion of the polymer film. Therefore, regardless of the degree of spread of the second cleaning solution, the exposed portion of the polymer film can be selectively removed, allowing for precise definition of the removal area. As a result, the peripheral coating can be removed with greater precision compared to cases where the peripheral coating is removed using a liquid such as a removal solution.

[0015] In one embodiment of this invention, the second cleaning liquid supply The process includes discharging a second cleaning liquid from the second cleaning liquid discharging member toward the inner region.

[0016] Therefore, the peripheral coating of the polymer film can be removed from the first main surface while protecting the inner coating of the polymer film with the second cleaning solution. In addition, the second cleaning solution discharged toward the inner region adheres to the surface of the polymer film. The second cleaning solution that adheres to the surface of the polymer film spreads radially across the polymer film, dissolving the peripheral coating. height While passing through the peripheral region, it is discharged off the substrate.

[0017] On the other hand, when the second cleaning solution is applied to the peripheral coating, it is immediately discharged from the substrate without spreading throughout the entire peripheral region. Therefore, by applying the second cleaning solution to the surface of the polymer film, the peripheral coating can be removed from a wide peripheral region at once, compared to when the second cleaning solution is applied to the peripheral coating.

[0018] In one embodiment of this invention, the peripheral exposure step includes a peripheral removal liquid supply step in which a removal liquid is discharged from a removal liquid discharge member facing the second main surface toward the second main surface, and the removal liquid is supplied to the peripheral region by flowing along the periphery of the substrate. Therefore, the removal liquid discharged from the removal liquid discharge member facing the second main surface can be supplied to the peripheral region without reaching the inner region of the upper surface of the substrate. This makes it possible to selectively remove the peripheral coating.

[0019] In one embodiment of this invention, the peripheral exposure step includes an inclined removal liquid discharge step in which the removal liquid is discharged from an inclined removal liquid discharge member facing the first main surface toward the peripheral region at an angle to the first main surface.

[0020] According to this method, the removal liquid is discharged from the inclined removal liquid discharge member at an angle toward the peripheral region relative to the first main surface. Therefore, it is possible to supply the removal liquid to the peripheral coating portion that covers the peripheral region while suppressing the flow of the removal liquid that has landed on the peripheral region toward the inner region along the first main surface. Thus, the removal liquid can be directly supplied from the inclined removal liquid discharge member to the peripheral region of the first main surface. Compared to the case where the removal liquid is supplied from the second main surface to the peripheral region of the first main surface by allowing it to flow along the periphery of the substrate, the peripheral coating portion can be removed with greater precision.

[0021] In one embodiment of the present invention, the first cleaning liquid supply step includes a step of discharging a first cleaning liquid from a first cleaning liquid discharge member toward the inner region.

[0022] Therefore, while protecting the portion on the inner region of the first main surface of the polymer film with the first cleaning liquid, the peripheral region of the first main surface can be cleaned. Further, the first cleaning liquid discharged toward the inner region adheres to the surface of the polymer film. The first cleaning liquid adhering to the surface of the polymer film spreads radially on the polymer film and is discharged outside the substrate through the peripheral region of the first main surface.

[0023] On the other hand, when the first cleaning liquid is made to adhere to the peripheral region, the first cleaning liquid is immediately discharged outside the substrate without spreading over the entire peripheral region. Therefore, if the first cleaning liquid is made to adhere to the surface of the polymer film, a wider peripheral region can be cleaned with the first cleaning liquid as compared with the case where the first cleaning liquid is made to adhere to the peripheral region.

[0024] In one embodiment of the present invention, the substrate processing method further includes a hydrophobization step of hydrophobizing the peripheral region before the polymer film forming step. The polymer film forming step includes a polymer-containing liquid supply step of supplying a polymer-containing liquid containing a polymer and a solvent to the first main surface of the substrate, and an evaporation forming step of evaporating the solvent from the polymer-containing liquid on the first main surface to form the polymer film.

[0025] According to this method, the peripheral region can be hydrophobized. Therefore, the adhesion of the polymer-containing liquid to the peripheral region can be suppressed. On the other hand, the polymer-containing liquid tends to remain on the inner region. Therefore, if the polymer-containing liquid is supplied to the entire first main surface, a polymer film covering the inner region with the peripheral region exposed can be formed without particularly devising the supply method of the polymer-containing liquid.

[0026] In one embodiment of this invention, the hydrophobicization step includes a hydrophobicization liquid supply step in which a hydrophobicization liquid is discharged from a hydrophobicization liquid discharge member toward the second main surface, and the hydrophobicization liquid is allowed to flow along the periphery of the substrate to reach the peripheral region. Therefore, the removal liquid discharged from the hydrophobicization liquid discharge member facing the second main surface is supplied to the peripheral region, and the periphery region It can be selectively hydrophobicized. [Brief explanation of the drawing]

[0027] [Figure 1] Figure 1 is a plan view illustrating an example of the configuration of a substrate processing apparatus according to the first embodiment of this invention. [Figure 2] Figure 2 is a schematic diagram illustrating the configuration of a wet processing unit provided in the substrate processing apparatus. [Figure 3] Figure 3 is a schematic diagram illustrating the configuration of the dry processing unit provided in the substrate processing apparatus. [Figure 4] Figure 4 is a block diagram illustrating the electrical configuration of the substrate processing apparatus. [Figure 5] Figure 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 6A] Figure 6A is a schematic diagram illustrating the state of the substrate while the substrate processing is being carried out. [Figure 6B] Figure 6B is a schematic diagram illustrating the state of the substrate while the substrate processing is being carried out. [Figure 6C] Figure 6C is a schematic diagram illustrating the state of the substrate during the substrate processing described above. [Figure 6D] Figure 6D is a schematic diagram illustrating the state of the substrate during the substrate processing described above. [Figure 6E] Figure 6E is a schematic diagram illustrating the state of the substrate during the substrate processing described above. [Figure 6F] Figure 6F is a schematic diagram illustrating the state of the substrate while the substrate processing is being carried out. [Figure 7A] Figure 7A is a perspective view of the substrate during the substrate processing. [Figure 7B] Figure 7B is a perspective view of the substrate during the substrate processing. [Figure 7C] Figure 7C is a perspective view of the substrate during the substrate processing. [Figure 8A] Figure 8A is a schematic diagram illustrating the changes in the peripheral region of the upper surface of the substrate during the substrate processing described above. [Figure 8B] Figure 8B is a schematic diagram illustrating the changes in the peripheral region of the upper surface of the substrate during the substrate processing described above. [Figure 8C] Figure 8C is a schematic diagram illustrating the changes in the peripheral region of the upper surface of the substrate during the substrate processing described above. [Figure 9A] Figure 9A is a schematic diagram illustrating a first modified example of the peripheral coating removal process. [Figure 9B] Figure 9B is a schematic diagram illustrating a second modified example of the peripheral coating removal process. [Figure 10] Figure 10 is a plan view illustrating an example of the configuration of a substrate processing apparatus according to the second embodiment of this invention. [Figure 11] Figure 11 is a schematic diagram illustrating the configuration of a first example of a wet processing unit provided in the substrate processing apparatus according to the second embodiment. [Figure 12] Figure 12 is a flowchart illustrating a first example of substrate processing performed by the substrate processing apparatus according to the second embodiment. [Figure 13A] Figure 13A is a schematic diagram illustrating the state of the substrate when the first example of the substrate processing according to the second embodiment is being performed. [Figure 13B] Figure 13B is a schematic diagram illustrating the state of the substrate when the first example of the substrate processing according to the second embodiment is being performed. [Figure 13C] Figure 13C is a schematic diagram illustrating the state of the substrate when the first example of the substrate processing according to the second embodiment is being performed. [Figure 13D]Figure 13D is a schematic diagram illustrating the state of the substrate when the first example of the substrate processing according to the second embodiment is being performed. [Figure 13E] Figure 13E is a schematic diagram illustrating the state of the substrate when the first example of the substrate processing according to the second embodiment is being performed. [Figure 14] Figure 14 is a schematic diagram illustrating the configuration of a second example of a wet processing unit provided in the substrate processing apparatus according to the second embodiment. [Figure 15] Figure 15 is a schematic diagram illustrating the state of the substrate when a second example of the substrate processing according to the second embodiment is being performed. [Figure 16] Figure 16 is a schematic diagram illustrating the configuration of a third example of a wet processing unit provided in the substrate processing apparatus according to the second embodiment. [Figure 17] Figure 17 is a flowchart illustrating a third example of substrate processing performed by the substrate processing apparatus according to the second embodiment. [Figure 18A] Figure 18A is a schematic diagram illustrating the state of the substrate when a third example of the substrate processing according to the second embodiment is being performed. [Figure 18B] Figure 18B is a schematic diagram illustrating the state of the substrate when a third example of the substrate processing according to the second embodiment is being performed. [Figure 18C] Figure 18C is a schematic diagram illustrating the state of the substrate when a third example of the substrate processing according to the second embodiment is being performed. [Figure 19] Figure 19 is a schematic diagram illustrating a modified example of the peripheral region cleaning process. [Modes for carrying out the invention]

[0028] Hereinafter, embodiments of this invention will be described with reference to the accompanying drawings.

[0029] <Configuration of the substrate processing apparatus according to the first embodiment> Figure 1 is a plan view illustrating an example of the configuration of a substrate processing apparatus 1 according to the first embodiment of this invention.

[0030] The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W one at a time. In this embodiment, the substrate W has a disc shape. The substrate W is a substrate such as a silicon wafer and has a pair of main surfaces. The main surfaces may be device surfaces on which devices having an uneven pattern are formed, or they may be non-device surfaces on which no devices are formed. The pair of main surfaces include a first main surface W1 (see Figure 2 described later) and a second main surface W2 (see Figure 2 described later) opposite to the first main surface W1. In this embodiment, the first main surface W1 is the device surface and the second main surface W2 is the non-device surface.

[0031] In the following, unless otherwise specified, we will describe an example where the top surface (upper principal surface) is the first principal surface W1 and the bottom surface (lower principal surface) is the second principal surface W2.

[0032] The substrate processing apparatus 1 includes a plurality of processing units 2 for processing substrates W, a load port LP (carrier holding unit) on which carriers C (carriers) for accommodating the plurality of substrates W processed by the processing units 2 are placed, transport robots (first transport robot IR and second transport robot CR) for transporting substrates W between the load port LP and the processing units 2, and a controller 3 for controlling each component provided in the substrate processing apparatus 1.

[0033] The first transport robot IR transports the substrate W between the carrier C and the second transport robot CR. The second transport robot CR transports the substrate W between the first transport robot IR and the processing unit 2. Each transport robot is, for example, an articulated arm robot.

[0034] Multiple processing units 2 are arranged on both sides of the transport path TR along which the substrate W is transported by the second transport robot CR, and are stacked in the vertical direction.

[0035] Multiple processing units 2 form four processing towers TW, each positioned at four horizontally separated locations. Each processing tower TW contains multiple processing units 2 stacked vertically. Two processing towers TW are located on each side of the transport path TR.

[0036] The multiple processing units 2 include multiple dry processing units 2D that process the substrate W while it is dry, and multiple wet processing units 2W that process the substrate W with a processing liquid. Examples of processing liquids, as will be described in detail later, include polymer-containing liquids, first cleaning liquids, rinsing liquids, and removal liquids.

[0037] The processing unit 2 includes a chamber 4 for housing substrates W during substrate processing. The chamber 4 includes an entrance / exit (not shown) for loading substrates W into and out of the chamber 4 by the second transport robot CR, and a shutter unit (not shown) for opening and closing the entrance / exit.

[0038] The wet processing unit 2W processes the substrate W in a processing cup 6 located inside the chamber 4. The dry processing unit 2D processes the substrate W with the substrate W placed on a stage 60 located inside the chamber 4.

[0039] <Configuration of the wet processing unit according to the first embodiment> Figure 2 is a schematic diagram illustrating the configuration of the wet processing unit 2W.

[0040] The wet processing unit 2W moves the substrate W to a predetermined processing position. Keep The system includes a spin chuck 5 that rotates the substrate W around a rotation axis A1 while holding it, a plurality of upper surface treatment liquid nozzles (polymer-containing liquid nozzle 8, first cleaning liquid nozzle 9, rinsing liquid nozzle 10, removal liquid nozzle 11) that discharge the treatment liquid toward the upper surface (first main surface W1) of the substrate W held by the spin chuck 5, and a lower surface rinsing liquid nozzle 12 that discharges the rinsing liquid toward the lower surface (second main surface W2) of the substrate W held by the spin chuck 5.

[0041] The spin chuck 5, multiple top treatment liquid nozzles, and bottom rinsing liquid nozzles 12 are located inside the chamber 4.

[0042] The rotation axis A1 passes through the center CP of the upper surface of the substrate W and is perpendicular to each main surface of the substrate W held in the processing position. In this embodiment, the processing position is a horizontal position in which the main surface of the substrate W is a horizontal plane. The horizontal position is the position of the substrate W shown in Figure 2, and when the processing position is the horizontal position, the rotation axis A1 extends vertically.

[0043] The spin chuck 5 is surrounded by the processing cup 6. The spin chuck 5 includes a spin base 20 that adheres to the underside of the substrate W and holds the substrate W in a processing position, a rotating shaft 21 that extends along the rotation axis A1 and is coupled to the spin base 20, and a rotational drive mechanism 22 that rotates the rotating shaft 21 around the rotation axis A1.

[0044] The spin base 20 has an adsorption surface 20a that adheres to the lower surface of the substrate W. The adsorption surface 20a is, for example, the upper surface of the spin base 20 and is a circular surface through which the rotation axis A1 passes. The diameter of the adsorption surface 20a is smaller than the diameter of the substrate W. The upper end of the rotation axis 21 is coupled to the spin base 20.

[0045] A suction path 23 is inserted into the spin base 20 and the rotating shaft 21. The suction path 23 has a suction port 23a that is exposed from the center of the adsorption surface 20a of the spin base 20. The suction path 23 is connected to a suction pipe 24. The suction pipe 24 is connected to a suction device 25 such as a vacuum pump. The suction device 25 may be part of the substrate processing apparatus 1, or it may be a separate device from the substrate processing apparatus 1 that is installed in the facility where the substrate processing apparatus 1 is installed.

[0046] The suction pipe 24 is equipped with a suction valve 26 for opening and closing the suction pipe 24. By opening the suction valve 26, the substrate W placed on the adsorption surface 20a of the spin base 20 is drawn into the suction port 23a of the suction path 23. As a result, the substrate W is adsorbed onto the adsorption surface 20a from below and held in the processing position.

[0047] The rotational drive mechanism 22 rotates the rotational shaft 21, causing the spin base 20 to rotate. As a result, the substrate W rotates together with the spin base 20 around the rotational axis A1.

[0048] The spin base 20 is an example of a substrate holding member that holds the substrate W in a predetermined processing position (horizontal position). The spin chuck 5 is an example of a rotation holding unit that rotates the substrate W around the rotation axis A1 while holding the substrate W in a predetermined processing position (horizontal position). The spin chuck 5 is also called a suction rotation unit that rotates the substrate W while suctioning it to the suction surface 20a.

[0049] Multiple top-surface treatment liquid nozzles are moved horizontally as a single unit by a first nozzle drive mechanism 27. The first nozzle drive mechanism 27 can move each top-surface treatment liquid nozzle between a central position and a retracted position.

[0050] The central position is where the discharge port of the top surface treatment liquid nozzle faces the rotation center (center CP) of the top surface of the substrate W. The retracted position is where the discharge port of the top surface treatment liquid nozzle does not face the top surface of the substrate W, and is located outside the treatment cup 6.

[0051] The first nozzle drive mechanism 27 can also position the top surface treatment liquid nozzle at a peripheral position. The peripheral position is the position where the discharge port of the top surface treatment liquid nozzle faces the peripheral region PA of the upper surface of the substrate W.

[0052] The peripheral region PA is an annular region on the upper surface of the substrate W that includes the area around the peripheral edge T of the substrate W. The circular region on the upper surface of the substrate W that is located inside the peripheral region PA and adjacent to the peripheral region PA is called the inner region IA. The inner region IA includes the central area CP on the upper surface of the substrate W and the surrounding area. The peripheral region PA is a region where no uneven pattern is formed, while the inner region IA is a region where an uneven pattern is formed.

[0053] The inner edge of the peripheral region PA is located, for example, at a position between 0.2 mm and 3.0 mm from the peripheral edge T of the substrate W. That is, the width of the peripheral region PA is between 0.2 mm and 3.0 mm.

[0054] The peripheral region PA of the upper surface of substrate W is connected to the peripheral region of the lower surface of substrate W via the leading edge (periphery T) of substrate W. The peripheral region of the lower surface of substrate W is an annular region on the lower surface of substrate W that includes the area around the periphery T of substrate W. The peripheral regions of the upper and lower surfaces of substrate W and the periphery T of substrate W are sometimes collectively referred to as the bevel.

[0055] The first nozzle drive mechanism 27 includes an arm 27a that supports a plurality of top surface treatment liquid nozzles, and an arm drive mechanism 27b that moves the arm 27a in a direction along the upper surface of the substrate W (horizontal direction). The arm drive mechanism 27b includes an actuator such as an electric motor or an air cylinder.

[0056] Each top surface treatment liquid nozzle may be a rotary nozzle that rotates around a predetermined pivot axis, or a linear nozzle that moves linearly in the direction in which the arm 27a extends. Each treatment liquid nozzle may also be configured to move in the vertical direction.

[0057] The multiple top surface treatment liquid nozzles include a polymer-containing liquid nozzle 8 that discharges a continuous stream of polymer-containing liquid toward the top surface of the substrate W held in the spin chuck 5, a first cleaning liquid nozzle 9 that discharges a first cleaning liquid toward the top surface of the substrate W held in the spin chuck 5, a rinsing liquid nozzle 10 that discharges a rinsing liquid toward the top surface of the substrate W held in the spin chuck 5, and a removal liquid nozzle 11 that discharges a continuous stream of removal liquid toward the top surface of the substrate W held in the spin chuck 5.

[0058] The polymer-containing liquid discharged from the polymer-containing liquid nozzle 8 contains a polymer and a solvent.

[0059] The polymer contained in the polymer-containing solution has lower solubility in the first cleaning solution than in the removal solution. The polymer also has lower solubility in the rinsing solution than in the removal solution. In other words, the polymer is more easily soluble in the removal solution than in the first cleaning solution and the rinsing solution. The polymer is, for example, a positive-type photosensitive resist. The polymer does not have to be a photosensitive resist, as long as it has the property of increasing its solubility in the rinsing solution upon light irradiation.

[0060] The solvent contained in the polymer-containing liquid has the property of dissolving the polymer. The solvent may include, for example, an organic solvent such as isopropanol (IPA).

[0061] The solvent contains at least one of the following: alcohols such as ethanol (EtOH) and IPA; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE); lactic acid esters such as methyl lactate and ethyl lactate (EL); aromatic hydrocarbons such as toluene and xylene; and ketones such as acetone, methyl ethyl ketone, 2-heptanone, and cyclohexanone.

[0062] The polymer-containing liquid nozzle 8 is connected to a polymer-containing liquid piping 40 that guides the polymer-containing liquid to the polymer-containing liquid nozzle 8. The polymer-containing liquid piping 40 is equipped with a polymer-containing liquid valve 50 that opens and closes the polymer-containing liquid piping 40. When the polymer-containing liquid valve 50 is opened, a continuous flow of polymer-containing liquid is discharged from the polymer-containing liquid nozzle 8.

[0063] The statement that the polymer-containing liquid valve 50 is provided in the polymer-containing liquid piping 40 may also mean that the polymer-containing liquid valve 50 is interposed in the polymer-containing liquid piping 40. The same applies to the other valves described below.

[0064] Although not shown in the diagram, the polymer-containing liquid valve 50 includes a valve body with a valve seat inside, a valve element that opens and closes the valve seat, and an actuator that moves the valve element between an open position and a closed position. Other valves have a similar configuration.

[0065] At least a portion of the solvent evaporates from the polymer-containing liquid supplied to the upper surface of the substrate W, causing the polymer-containing liquid on the substrate W to transform into a semi-solid or solid polymer film.

[0066] A semi-solid state is a state in which solid and liquid components are mixed, or a state with a viscosity sufficient to maintain a certain shape on the substrate W. A solid state is a state in which no liquid components are contained and the material consists only of solid components. A polymer film in which solvent remains is called a semi-solid film, and a polymer film in which the solvent has completely disappeared is called a solid film. Therefore, the polymer film does not spread on the upper surface of the substrate W, but remains in the position where it was formed.

[0067] The first cleaning liquid discharged from the first cleaning liquid nozzle 9 is a liquid that removes the target substance from the substrate W by cleaning the substrate W. The target substance is something that has formed on the substrate W during the pretreatment performed before processing by the substrate processing apparatus 1. In other words, the target substance is not a part of the substrate W, but rather a deposit that adheres to the main surface of the substrate W.

[0068] The material to be removed is, for example, particles such as film residue. The particles are, for example, insulators or metals. Specifically, the particles consist of silicon nitride (SiN), titanium nitride (TiN), and tungsten (W). The material to be removed is mainly attached to the peripheral edge T of the substrate W, specifically to the bevel portion of the substrate W.

[0069] In the pretreatment process, chuck pins are sometimes used to grip the bevel portion of the substrate W in order to maintain the substrate W's orientation. In such cases, the bevel portion of the substrate W may become contaminated by the chuck pins, and particles may adhere to the bevel portion of the substrate W. Also, when removing the film from the top surface of the substrate W, liquid may not easily penetrate the area of ​​the substrate W that comes into contact with the chuck pins, and the film may not be sufficiently removed from the contact area between the substrate W and the chuck pins. In such cases as well, particles may be generated on the bevel portion of the substrate W.

[0070] Particles generated in the bevel area may adhere to the uneven pattern of the inner region IA of the upper surface (first main surface W1), which is the device surface, potentially causing defects such as malfunctions.

[0071] The first cleaning liquid discharged from the first cleaning liquid nozzle 9 is a liquid that removes the substances to be removed that are present on the substrate W. Preferably, the first cleaning liquid has the property of dissolving the substances to be removed.

[0072] The first washing solution contains, for example, hydrogen peroxide (H2O2), hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF), hydrochloric acid (HCl), HPM solution (hydrochloric acid-hydrogen peroxide mixture), SPM solution (sulfuric acid / hydrogen peroxide mixture), ammonia water, TMAH solution (Tetramethylammonium hydroxide solution), or APM solution (ammonia-hydrogen peroxide mixture).

[0073] Hydrofluoric acid, dilute hydrofluoric acid, buffered hydrofluoric acid, hydrochloric acid, HPM solution, and SPM solution are classified as acidic cleaning solutions. Ammonia water, APM solution, and TMAH solution are classified as alkaline cleaning solutions. When the object to be removed is an insulator, it is preferable to use an alkaline cleaning solution as the first cleaning solution, and when the object to be removed is a metal, it is preferable to use an acidic cleaning solution as the first cleaning solution.

[0074] The first washing solution may be hydrogen peroxide solution, hydrofluoric acid, dilute hydrofluoric acid, buffered hydrofluoric acid, hydrochloric acid, HPM solution, SPM solution, or a mixture containing at least two of these. Alternatively, the first washing solution may be ammonia water, APM solution, TMAH solution, or a mixture containing at least two of these.

[0075] The first cleaning fluid nozzle 9 is connected to a first cleaning fluid pipe 41 that guides the first cleaning fluid to the first cleaning fluid nozzle 9. The first cleaning fluid pipe 41 is equipped with a first cleaning fluid valve 51 that opens and closes the first cleaning fluid pipe 41. When the first cleaning fluid valve 51 is opened, a continuous flow of the first cleaning fluid is discharged from the first cleaning fluid nozzle 9.

[0076] The rinsing liquid discharged from the rinsing liquid nozzle 10 is a liquid that rinses the upper surface of the substrate W and removes the first cleaning liquid from the upper surface of the substrate W.

[0077] The rinsing solution is, for example, water such as DIW. However, the rinsing solution is not limited to DIW. The rinsing solution is not limited to DIW, for example charcoal Acidic water, electrolyzed ionized water, hydrochloric acid water at a dilution concentration (for example, 1 ppm or more and 100 ppm or less), ammonia water at a dilution concentration (for example, 1 ppm or more and 100 ppm or less), or reduced water (hydrogen water) may be used.

[0078] The rinse liquid nozzle 10 is connected to a rinse liquid pipe 42 that guides the rinse liquid to the rinse liquid nozzle 10. The rinse liquid pipe 42 is equipped with a rinse liquid valve 52 that opens and closes the rinse liquid pipe 42. When the rinse liquid valve 52 is opened, a continuous flow of rinse liquid is discharged from the rinse liquid nozzle 10.

[0079] In this embodiment, since the polymer film contains a positive-type photosensitive resist, the exposed portion of the polymer film can be removed from the substrate W by the rinse solution, which is the second cleaning solution.

[0080] The removal liquid discharged from the removal liquid nozzle 11 is a liquid that removes the polymer film from the upper surface of the substrate W by dissolving the polymer film. The removal liquid is a liquid that dissolves the polymer film more easily than the first cleaning liquid and the rinsing liquid. The polymer film remaining on the upper surface of the substrate W may be removed from the upper surface of the substrate W by being pushed off the substrate W by the energy acting from the liquid flow of the removal liquid.

[0081] The removal liquid discharged from the removal liquid nozzle 11 is, for example, an organic solvent such as IPA. Any of the liquids listed as organic solvents used as solvents for polymer film-containing liquids can be used as the removal liquid. In other words, the same type of liquid used as the solvent for the polymer-containing liquid can be used as the removal liquid.

[0082] The removal liquid nozzle 11 is connected to a removal liquid piping 43 that guides the removal liquid to the removal liquid nozzle 11. The removal liquid piping 43 is equipped with a removal liquid valve 53 that opens and closes the removal liquid piping 43. When the removal liquid valve 53 is opened, a continuous flow of removal liquid is discharged from the removal liquid nozzle 11.

[0083] The rinse liquid discharged from the lower rinse liquid nozzle 12 can be any of the liquids listed as rinse liquids discharged from the rinse liquid nozzle 10.

[0084] The bottom rinse liquid nozzle 12 is connected to the bottom rinse liquid piping 44, which guides the rinse liquid to the bottom rinse liquid nozzle 12. The bottom rinse liquid piping 44 is equipped with a bottom rinse liquid valve 54 that opens and closes the bottom rinse liquid piping 44.

[0085] The lower rinse liquid nozzle 12 is fixed in position relative to the spin chuck 5. The lower rinse liquid nozzle 12 has a discharge port facing the peripheral region of the lower surface of the substrate W. When the lower rinse liquid valve 54 is opened, a continuous flow of rinse liquid is discharged from the lower rinse liquid nozzle 12 toward the peripheral region of the lower surface. The lower rinse liquid nozzle 12 only needs to supply rinse liquid to the lower surface of the substrate W and does not necessarily need to discharge the rinse liquid toward the peripheral region of the lower surface of the substrate W.

[0086] The configuration of the processing cup 6 is not particularly limited. The processing cup 6 includes, for example, a plurality of guards 28 (two in Figure 2) that receive processing liquid splashed outward from the substrate W held in the spin chuck 5, a plurality of cups 29 (two in Figure 2) that each receive the processing liquid guided downward by the plurality of guards 28, and a cylindrical outer wall member 30 that surrounds the plurality of guards 28 and the plurality of cups 29.

[0087] Each guard 28 has a cylindrical shape that surrounds the spin chuck 5 in a plan view. The upper end of each guard 28 is inclined toward the inside of the guard 28. Each cup 29 has the shape of an annular groove that is open toward the outside. Multiple guards 28 and multiple cups 29 are arranged coaxially.

[0088] Multiple guards 28 are individually raised and lowered by a guard lifting drive mechanism (not shown). The guard lifting drive mechanism includes, for example, multiple actuators that drive each of the multiple guards 28 to raise or lower. The multiple actuators include at least one of an electric motor and an air cylinder.

[0089] <Configuration of the dry processing unit> Figure 3 is a schematic diagram illustrating the configuration of the dry processing unit 2D provided in the substrate processing apparatus 1.

[0090] The dry processing unit 2D is an exposure unit located inside the chamber 4 that exposes a polymer film on the substrate W. The dry processing unit 2D includes a stage drive mechanism 61 that moves the stage 60 in a direction along the upper surface of the substrate W (horizontal direction), a light emitting member 62 that emits light, a plurality of lift pins 63 that move up and down through the stage 60, and a pin drive mechanism 64 that moves the plurality of lift pins 63.

[0091] The stage 60 has a mounting surface 60a on which the substrate W is placed. The stage drive mechanism 61 includes, for example, an actuator that drives the stage 60. The actuator includes at least one of an electric motor and an air cylinder.

[0092] The light-emitting member 62 includes, for example, a light source that emits light L. The light L emitted from the light-emitting member 62 is, for example, ultraviolet light with a wavelength of 1 nm or more and a wavelength of 400 nm or less. The light source is, for example, a laser light source that emits laser light. The laser light source is, for example, an excimer lamp that emits an excimer laser.

[0093] A power supply unit 65 is connected to the light-emitting member 62, and when power is supplied from the power supply unit 65, light L is emitted from the light-emitting member 62.

[0094] The dry processing unit 2D may further include a reflective member 66, such as a mirror, that reflects light L toward the peripheral region PA of the upper surface of the substrate W. In this embodiment, only one reflective member 66 is shown, but there may be multiple reflective members 66 that reflect light L emitted from the light emitting member 62. The irradiation position of light L can be changed by changing the reflection angle of the reflective member 66.

[0095] Multiple lift pins 63 are each inserted into multiple through holes that penetrate the stage 60. The multiple lift pins 63 are moved by a pin drive mechanism 64 in a direction perpendicular to the main surface of the substrate W (vertical direction). The multiple lift pins 63 move between an upper position (shown by a dashed line in Figure 3) that supports the substrate W above the mounting surface 60a and a lower position (shown by a solid line in Figure 3) where the tip (upper end) is retracted below the mounting surface 60a.

[0096] The pin drive mechanism 64 may be an electric motor or an air cylinder, or it may be an actuator other than these.

[0097] <Electrical configuration of substrate processing according to the first embodiment> Figure 4 is a block diagram illustrating the electrical configuration of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls the controlled objects provided in the substrate processing apparatus 1 according to a predetermined control program.

[0098] Specifically, the controller 3 includes a processor 3A (CPU) and a memory 3B in which a control program is stored. The controller 3 is configured to perform various controls for board processing by having the processor 3A execute the control program.

[0099] In particular, the controller 3 is programmed to control the first transport robot IR, the second transport robot CR, the rotary drive mechanism 22, the first nozzle drive mechanism 27, the stage drive mechanism 61, the pin drive mechanism 64, the power supply unit 65, the suction valve 26, the polymer-containing liquid valve 50, the first cleaning liquid valve 51, the rinse liquid valve 52, the removal liquid valve 53, the bottom rinse liquid valve 54, and the like.

[0100] Each of the following steps is performed by the controller 3 controlling each component provided in the substrate processing apparatus 1. In other words, the controller 3 is programmed to perform each of the following steps.

[0101] Furthermore, while Figure 4 shows representative components, this does not mean that components not shown are not controlled by the controller 3. The controller 3 can appropriately control each component provided in the substrate processing apparatus 1. Figure 4 also shows components described in the various modifications and the second embodiment described later, and these components are also controlled by the controller 3.

[0102] <An example of substrate processing> Figure 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1. Figures 6A to 6F are schematic diagrams illustrating the appearance of the substrate W and its surroundings during substrate processing. Figures 7A to 7C are perspective views of the substrate W during substrate processing.

[0103] In the substrate processing using the substrate processing apparatus 1, for example, as shown in Figure 5, the following steps are performed: first loading step (step S1), coating step (step S2), first unloading step (step S3), second loading step (step S4), exposure step (step S5), second unloading step (step S6), third loading step (step S7), peripheral coating removal step (step S8), peripheral area cleaning step (step S9), rinsing step (step S10), polymer film removal step (step S11), spin drying step (step S12), and third unloading step (step S13). The details of the substrate processing will be explained below, mainly with reference to Figures 2, 3, and 5. Figures 6A to 7C will be referred to as appropriate.

[0104] First, the unprocessed substrate W is First transport robot IR and The substrate W is transported from the carrier C to the wet processing unit 2W by the second transport robot CR (see Figure 1) and then passed to the spin chuck 5 (first loading process: step S1). The substrate W is then held in the processing position by the spin chuck 5 (substrate holding process). At this time, the substrate W is held in the spin chuck 5 with the first main surface W1 facing upwards. The spin chuck 5 begins to rotate the substrate W while holding it (substrate rotation process).

[0105] After the second transport robot CR retracts from the chamber 4, a coating process (step S2) is performed to form a polymer film 100 (see Figure 6B) that covers the peripheral region PA and the inner region IA of the upper surface of the substrate W.

[0106] Specifically, the first nozzle drive mechanism 27 moves the polymer-containing liquid nozzle 8 to the processing position. The processing position of the polymer-containing liquid nozzle 8 is, for example, the central position. With the polymer-containing liquid nozzle 8 in the processing position, the polymer-containing liquid valve 50 is opened. As a result, as shown in Figure 6A, the polymer-containing liquid is supplied (discharged) from the polymer-containing liquid nozzle 8 toward the central area CP (inner region IA) of the upper surface of the substrate W (polymer-containing liquid supply process, polymer-containing liquid discharge process). The polymer-containing liquid nozzle 8 is an example of a polymer-containing liquid discharge member.

[0107] The polymer-containing liquid discharged from the polymer-containing liquid nozzle 8 lands on the central CP (inner region IA) of the upper surface of the substrate W. The polymer-containing liquid on the substrate W spreads toward the periphery T of the substrate W due to centrifugal force caused by the rotation of the substrate W. As a result, the entire upper surface of the substrate W is covered with the polymer-containing liquid (coating process), as shown in Figure 7A.

[0108] While a polymer-containing liquid is supplied to the upper surface of the substrate W, a rinsing liquid is supplied to the lower surface of the substrate W. Specifically, the lower rinsing liquid valve 54 is opened, and the rinsing liquid is discharged from the lower rinsing liquid nozzle 12 toward the lower surface of the substrate W. The rinsing liquid on the lower surface of the substrate W moves toward the periphery T of the substrate W due to centrifugal force and splashes outside the substrate W. Since the peripheral region of the lower surface of the substrate W is protected by the rinsing liquid, it is possible to prevent the polymer-containing liquid on the upper surface of the substrate W from traveling along the periphery T of the substrate W and reaching the lower surface of the substrate W.

[0109] After supplying the polymer-containing liquid to the upper surface of the substrate W for a predetermined period of time, the polymer-containing liquid valve 50 is closed. This stops the discharge of the polymer-containing liquid from the polymer-containing liquid nozzle 8.

[0110] The bottom rinse liquid valve 54 is closed simultaneously with, or after, the discharge of the polymer-containing liquid is stopped. Closing the bottom rinse liquid valve 54 stops the discharge of rinse liquid from the bottom rinse liquid nozzle 12. This prevents the polymer-containing liquid on the upper surface of the substrate W from traveling along the periphery T of the substrate W and reaching the lower surface of the substrate W after the discharge of the rinse liquid is stopped.

[0111] After the discharge of the polymer-containing liquid is stopped, the rotation of the substrate W is continued, causing a portion of the polymer-containing liquid on the substrate W to scatter from the periphery T of the substrate W to the outside of the substrate W. This thins the liquid film of the polymer-containing liquid on the substrate W (spin-off process, thinning process).

[0112] The centrifugal force caused by the rotation of the substrate W acts not only on the polymer-containing liquid on the substrate W, but also on the gas in contact with the polymer-containing liquid on the substrate W. As a result, the centrifugal force creates a radial airflow directed toward the periphery T of the substrate W. This airflow removes the gaseous solvent in contact with the polymer-containing liquid on the substrate W from the atmosphere in contact with the substrate W. As a result, the evaporation (volatilization) of the solvent from the polymer-containing liquid on the substrate W is promoted, and a polymer film 100 is formed as shown in Figure 6B (evaporation formation process). As shown in Figure 7B, the polymer film 100 has an annular peripheral covering portion 101 that covers the peripheral region PA of the upper surface of the substrate W, and a circular inner covering portion 102 that covers the inner region IA.

[0113] After the polymer film 100 is formed, the rotation of the substrate W is stopped. Then, the second transport robot CR enters the wet processing unit 2W, receives the processed substrate W from the spin chuck 5, and transports it out of the wet processing unit 2W (first transport process: step S3).

[0114] Subsequently, the substrate W is transported to the dry processing unit 2D by the second transport robot CR and passed to a plurality of lift pins 63 (second loading process: step S4). Then, the plurality of lift pins 63 are moved to a lower position by the pin drive mechanism 64, and the substrate W is placed on the mounting surface 60a of the stage 60. At this time, the substrate W is placed on the mounting surface 60a with the first main surface W1 facing upwards.

[0115] With the substrate W placed on the mounting surface 60a, power is supplied from the energizing unit 65 to the light emitting member 62, causing light L to be emitted from the light emitting member 62 as shown in Figure 6C. The light L emitted from the light emitting member 62 exposes the peripheral coating portion 101 of the polymer film 100 (exposure step: step S5). The exposure alters the polymer (photosensitive resist) constituting the peripheral coating portion 101, making the peripheral coating portion 101 more easily soluble in the rinsing solution than the inner coating portion 102.

[0116] After the peripheral coating portion 101 is exposed, the pin drive mechanism 64 moves the multiple lift pins 63 to an upward position, causing the multiple lift pins 63 to lift the substrate W from the mounting surface 60a of the stage 60. The second transport robot CR receives the substrate W from the multiple lift pins 63 and unloads the substrate W from the dry processing unit 2D (second unloading process: step S6).

[0117] The substrate W, discharged from the dry processing unit 2D, is transported to the wet processing unit 2W by the second transport robot CR and passed to the spin chuck 5 (third loading process: step S7). The substrate W is then held in the processing position by the spin chuck 5 (substrate holding process). At this time, the substrate W is held in the spin chuck 5 with the first main surface W1 facing upwards. The spin chuck 5 begins rotating the substrate W while holding it (substrate rotation process).

[0118] After the second transport robot CR retracts from the chamber 4, a peripheral coating removal process (step S8) is performed to remove the peripheral coating portion 101 of the polymer film 100.

[0119] Specifically, the first nozzle drive mechanism 27 moves the rinse liquid nozzle 10 to the peripheral position. With the rinse liquid nozzle 10 in the peripheral position, the rinse liquid valve 52 is opened. As a result, as shown in Figure 6D, the rinse liquid as the second cleaning liquid is supplied (discharged) from the rinse liquid nozzle 10 toward the peripheral region PA on the upper surface of the substrate W (second cleaning liquid supply step, second cleaning liquid discharge step).

[0120] The rinse liquid discharged from the rinse liquid nozzle 10 lands on the peripheral region PA of the upper surface of the substrate W. The rinse liquid that has landed on the upper surface of the substrate W moves toward the peripheral edge T of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the peripheral edge T of the substrate W.

[0121] The peripheral coating portion 101 of the polymer film 100 is dissolved in the rinsing solution and discharged from the upper surface of the substrate W along with the rinsing solution containing the dissolved peripheral coating portion 101. It is not necessary for all of the peripheral coating portion 101 to dissolve in the rinsing solution; a portion of the peripheral coating portion 101 may be peeled off from the upper surface of the substrate W by the flow of the rinsing solution and discharged outside the substrate W. By removing the peripheral coating portion 101 of the polymer film 100, the peripheral region PA of the upper surface of the substrate W is exposed (peripheral exposure step). Therefore, the rinsing solution nozzle 10 functions as a second cleaning solution discharge member.

[0122] As shown in Figure 7C, even after the peripheral exposure process, the inner region IA on the upper surface of the substrate W is covered by the inner coating portion 102 of the polymer film 100. In other words, the inner region IA on the upper surface of the substrate W is protected by the inner coating portion 102 of the polymer film 100. The inner coating portion 102 functions as a protective film. Thus, by performing the peripheral coating removal process, a polymer film 100 is formed that exposes the peripheral region PA and covers the inner region IA (polymer film formation process).

[0123] After the rinse solution is supplied for a predetermined period of time, a peripheral region cleaning step (step S9) is performed to clean the peripheral region PA on the upper surface of the substrate W.

[0124] Specifically, by closing the rinse liquid valve 52, the discharge of rinse liquid from the rinse liquid nozzle 10 is stopped. After the discharge of rinse liquid is stopped, the first nozzle drive mechanism 27 moves the first cleaning liquid nozzle 9 to the peripheral position. With the first cleaning liquid nozzle 9 in the peripheral position, the first cleaning liquid valve 51 is opened. As a result, as shown in Figure 6E, the first cleaning liquid is supplied (discharged) from the first cleaning liquid nozzle 9 toward the peripheral region PA on the upper surface of the substrate W (first cleaning liquid supply step, first cleaning liquid discharge step). The first cleaning liquid nozzle 9 is an example of a first cleaning liquid discharge member.

[0125] The first cleaning solution discharged from the first cleaning solution nozzle 9 lands on the peripheral region PA of the upper surface of the substrate W. The first cleaning solution that has landed on the upper surface of the substrate W moves toward the peripheral edge T of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and splashes from the peripheral edge T of the substrate W. The first cleaning solution removes the objects to be removed from the peripheral region PA, and the peripheral region PA is cleaned.

[0126] After the first cleaning solution is supplied for a predetermined period of time, a rinsing step (step S10) is performed in which a rinsing solution is supplied to the peripheral region PA of the upper surface of the substrate W to rinse the peripheral region PA of the upper surface of the substrate W.

[0127] Specifically, the first cleaning fluid valve 51 is closed to stop the discharge of the first cleaning fluid from the first cleaning fluid nozzle 9. After the discharge of the first cleaning fluid is stopped, the first nozzle drive mechanism 27 moves the rinse fluid nozzle 10 to the peripheral position. With the rinse fluid nozzle 10 in the peripheral position, the rinse fluid valve 52 is opened. As a result, rinse fluid is supplied (discharged) from the rinse fluid nozzle 10 toward the peripheral region PA of the upper surface of the substrate W (rinse fluid supply process, rinse fluid discharge process).

[0128] The rinse liquid discharged from the rinse liquid nozzle 10 lands on the peripheral region PA of the upper surface of the substrate W. The rinse liquid that has landed on the upper surface of the substrate W spreads toward the peripheral edge T of the substrate W due to the action of centrifugal force and scatters outside the substrate W. The rinse liquid, along with the first cleaning liquid that was attached to the substrate W at the start of the rinse liquid supply, is removed from the upper surface of the substrate W. In this way, the upper surface of the substrate W is rinsed.

[0129] After the rinse solution has been supplied for a predetermined period of time, in the inner region IA on the upper surface of the substrate W Removal solution A polymer film removal process (step S11) is performed, in which the polymer film 100 is removed from the upper surface of the substrate W.

[0130] Specifically, by closing the rinse liquid valve 52, the discharge of rinse liquid from the rinse liquid nozzle 10 is stopped. After the discharge of rinse liquid is stopped, the first nozzle drive mechanism 27 moves the removal liquid nozzle 11 to the central position. With the removal liquid nozzle 11 in the central position, the removal liquid valve 53 is opened. As a result, as shown in Figure 6F, the removal liquid is discharged from the removal liquid nozzle 11 toward the inner region IA on the upper surface of the substrate W (removal liquid supply step, removal liquid discharge step).

[0131] The removal liquid discharged from the removal liquid nozzle 11 lands on the surface of the polymer film 100 on the upper surface of the substrate W. The removal liquid that has landed on the surface of the polymer film 100 spreads radially toward the periphery T of the substrate W due to the action of centrifugal force. The removal liquid then scatters from the periphery T of the substrate W.

[0132] The inner coating portion 102 of the polymer film 100 is dissolved in the removal solution and discharged from the upper surface of the substrate W along with the removal solution. It is not necessary for the entire inner coating portion 102 to dissolve in the removal solution; a portion of the inner coating portion 102 may be peeled off from the upper surface of the substrate W by the flow of the removal solution and discharged from the upper surface of the substrate W. By removing the inner coating portion 102 of the polymer film 100, the polymer film 100 is removed from the entire upper surface of the substrate W.

[0133] Next, a spin-drying process (step S12) is performed in which the substrate W is rotated at high speed to dry the upper surface of the substrate W. Specifically, the removal liquid valve 53 is closed to stop the supply of removal liquid to the upper surface of the substrate W, and the first nozzle drive mechanism 27 retracts the removal liquid nozzle 11 to a retracted position. Then, the spin chuck 5 accelerates the rotation of the substrate W, causing the substrate W to rotate at high speed (for example, 1500 rpm). As a result, a large centrifugal force acts on the removal liquid adhering to the substrate W, causing the removal liquid to be swept away around the substrate W.

[0134] After the spin-drying process (step S12), the spin chuck 5 stops the rotation of the substrate W. Then, the second transport robot CR enters the wet processing unit 2W, receives the processed substrate W from the spin chuck 5, and transports it out of the wet processing unit 2W (third transport process: step S13). The substrate W is then passed from the second transport robot CR to the first transport robot IR, which then places it into the carrier C.

[0135] <Changes in the peripheral region of the upper surface of the substrate during substrate processing> Figures 8A to 8C are schematic diagrams illustrating the changes in the peripheral region PA on the upper surface of the substrate W during substrate processing.

[0136] Figure 8A shows the state immediately after the polymer film 100 is formed on the upper surface of the substrate W. As described above, the material to be removed 103 may be attached to the peripheral region PA of the upper surface of the substrate W.

[0137] The entire upper surface of the substrate W is covered by the polymer film 100. Therefore, the object to be removed 103 is also covered by the peripheral covering portion 101 of the polymer film 100.

[0138] Figure 8B shows the state in which the peripheral coating portion 101 of the polymer film 100 has been removed by the rinsing solution, which is the second cleaning solution, leaving the inner coating portion 102. By removing the peripheral coating portion 101, the object to be removed 103 is exposed along with the peripheral region PA on the upper surface of the substrate W. Note that, for the sake of explanation, the rinsing solution is not shown in Figure 8B.

[0139] Figure 8C shows the state after the peripheral region PA has been cleaned with the first cleaning solution. As shown in Figure 8C, the object to be removed 103 is removed by the first cleaning solution. Note that, for the sake of explanation, the illustration of the first cleaning solution is omitted in Figure 8C.

[0140] <Summary of the First Embodiment> According to the first embodiment, a polymer film forming step is performed in which a polymer film 100 is formed that exposes the peripheral region PA of the upper surface (first main surface W1) of the substrate W and covers the inner region IA of the upper surface (first main surface W1) of the substrate W. Subsequently, a first cleaning solution is supplied to the peripheral region PA so as to maintain the inner covering portion 102 of the polymer film 100 on the upper surface of the substrate W, and then a removal solution is supplied to the entire upper surface of the substrate W.

[0141] Therefore, after cleaning the peripheral region PA with a cleaning solution that is relatively ineffective in dissolving the polymer film 100 to remove the object to be removed 103 from the peripheral region PA, the inner coating portion 102 can be removed from the top surface with a removal solution that is relatively effective in dissolving the polymer film 100.

[0142] As a result, the peripheral region PA can be cleaned while suppressing contamination of the inner region IA. This prevents the removal material 103 from adhering to the uneven pattern of the inner region IA on the upper surface (first main surface W1), which is the device surface.

[0143] According to the first embodiment, the inner region IA is protected by the polymer film 100. As described above, the polymer film 100 does not spread easily on the upper surface of the substrate W compared to a liquid. Therefore, it is easy to expose the upper surface of the substrate W at an appropriate distance from the peripheral edge T of the substrate W. Thus, compared to a configuration in which the inner region IA is protected by a liquid, the inner region IA can be protected by the polymer film 100 while the peripheral region PA is appropriately exposed.

[0144] According to the first embodiment, after forming a polymer film 100 having a peripheral coating portion 101 and an inner coating portion 102, the peripheral region PA of the upper surface of the substrate W is exposed by removing the peripheral coating portion 101. That is, after forming the polymer film 100 over a wide area on the substrate W, the inner region IA can be selectively coated with the polymer film 100 by removing the unnecessary portion.

[0145] Here, unlike in the first embodiment, it is difficult to form a polymer film 100 that exposes the peripheral region PA and covers the inner region IA while suppressing the spread of the polymer-containing liquid from the inner region IA to the peripheral region PA.

[0146] On the other hand, as in the first embodiment, if the polymer film 100 is formed over a wide area on the substrate W and then the unnecessary parts (peripheral coating portion 101) are removed, there is no need to suppress the spread of the polymer-containing liquid on the substrate W, making it easier to control the area covered by the polymer film 100 on the upper surface of the substrate W.

[0147] In the first embodiment, the peripheral coating portion 101 is more easily dissolved in the rinse solution, which is the second cleaning solution, than the inner coating portion 102 by exposure. After the exposure process (step S5), the rinse solution is discharged toward the peripheral region PA. Therefore, the peripheral coating portion 101 can be removed from the upper surface of the substrate W while the inner coating portion 102 is maintained in the inner region IA.

[0148] Furthermore, the peripheral coating portion 101 removed by the rinsing solution is the exposed portion of the polymer film 100. Therefore, regardless of the degree to which the rinsing solution spreads, the exposed portion of the polymer film 100 can be selectively removed, allowing for precise definition of the removal area. As a result, the peripheral coating portion 101 can be removed with greater precision compared to the case where the peripheral coating portion 101 is removed using a liquid such as a removal solution.

[0149] Unlike the first embodiment, the polymer contained in the polymer-containing liquid may be a negative-type photosensitive resist. In this case, if the entire inner coating portion 102 of the polymer film 100 is exposed in the exposure step (step S5), then in the subsequent peripheral coating portion removal step (step S8), only the peripheral coating portion 101 can be removed by the rinsing liquid while maintaining the inner coating portion 102 in the inner region IA.

[0150] <Modified example of the peripheral coating removal process> The following modifications can be applied to the peripheral coating removal step (step S8). Figure 9A is a schematic diagram illustrating the first modification of the peripheral coating removal step. Unlike the first embodiment, as shown in Figure 9A, in the peripheral coating removal step (step S8), the rinse liquid (second cleaning liquid) may be discharged from the rinse liquid nozzle 10 (second cleaning liquid discharge member) toward the inner region IA of the upper surface of the substrate W.

[0151] In this way, the peripheral coating portion 101 can be removed from the upper surface of the substrate W while protecting the inner coating portion 102 with the rinsing liquid as the second cleaning liquid. The rinsing liquid discharged toward the inner region IA also adheres to the surface of the polymer film 100. The rinsing liquid that adheres to the surface of the polymer film 100 spreads radially across the polymer film 100, dissolving the peripheral coating portion 101 as it passes through the peripheral region PA and is discharged outside the substrate W. With the removal of the peripheral coating portion 101 of the polymer film 100, the peripheral region PA on the upper surface of the substrate W is exposed (peripheral exposure process).

[0152] On the other hand, when the rinsing liquid is applied to the peripheral coating portion 101, the rinsing liquid does not spread throughout the entire peripheral region PA, but dissolves the peripheral coating portion 101 near the point of application, and is immediately discharged outside the substrate W. Therefore, as shown in Figure 9A, by applying the rinsing liquid to the surface of the peripheral coating portion 101, the peripheral coating portion 101 can be removed from a wide area of ​​the peripheral region PA at once, compared to when the rinsing liquid is applied to the peripheral region PA.

[0153] Figure 9B is a schematic diagram illustrating a second modified example of the peripheral coating removal process. As shown in Figure 9B, the rinse liquid discharged from the lower rinse liquid nozzle 12 can also be used as the second cleaning liquid.

[0154] Specifically, the rinse liquid discharged from the bottom rinse liquid nozzle 12 lands on the peripheral region of the bottom surface of the substrate W. The rinse liquid that has landed on the bottom surface of the substrate W spreads toward the peripheral edge T of the substrate W due to centrifugal force caused by the rotation of the substrate W. At least a portion of the rinse liquid is supplied to the peripheral region PA via the peripheral edge T of the substrate W (peripheral rinse liquid supply step, peripheral second cleaning liquid supply step). The rinse liquid supplied to the peripheral region PA via the peripheral edge T of the substrate W is scattered from the peripheral edge T of the substrate W due to centrifugal force.

[0155] The peripheral coating portion 101 of the polymer film 100 is dissolved in the rinsing solution and discharged from the upper surface of the substrate W along with the rinsing solution containing the dissolved peripheral coating portion 101. By removing the peripheral coating portion 101 of the polymer film 100, the peripheral region PA of the upper surface of the substrate W is exposed (peripheral exposure step).

[0156] <Substrate processing apparatus according to the second embodiment> Figure 10 is a plan view illustrating an example of the configuration of a substrate processing apparatus 1A according to the second embodiment of the present invention. In Figure 10, components equivalent to those shown in Figures 1 to 9B are given the same reference numerals as in Figure 1, etc., and their descriptions are omitted. The same applies to Figures 11 to 18C, which will be described later.

[0157] The main difference between the substrate processing apparatus 1A according to the second embodiment and the substrate processing apparatus 1 according to the first embodiment is that the substrate processing apparatus 1A is not provided with a dry processing unit 2D. In the second embodiment, each processing tower TW is composed of a plurality of wet processing units 2WA.

[0158] The polymer contained in the polymer-containing liquid used in the wet treatment unit 2WA does not need to be modified by light irradiation, and is a polymer whose solubility in the first washing solution is lower than its solubility in the removal solution. Specifically, the polymer contains at least one of polystyrene, polysulfonic acid, and novolac.

[0159] The wet processing unit 2WA has, for example, the configurations of the first to third examples shown in Figures 11, 14, and 16, respectively, which will be described later.

[0160] <Configuration of the first example of a wet processing unit according to the second embodiment> Figure 11 is a schematic diagram illustrating the configuration of a first example of the wet processing unit 2WA according to the second embodiment.

[0161] The main difference between the first example of the wet processing unit 2WA according to the second embodiment and the wet processing unit 2W according to the first embodiment is that it is provided with a bottom surface removal liquid nozzle 13 that discharges the removal liquid toward the bottom surface (second main surface W2) of the substrate W. The bottom surface removal liquid nozzle 13 is an example of a removal liquid discharge member.

[0162] The removal liquid discharged from the bottom removal liquid nozzle 13 can be any of the liquids listed as removal liquids discharged from the removal liquid nozzle 11.

[0163] The bottom removal liquid nozzle 13 is connected to a bottom removal liquid piping 45 that guides the removal liquid to the bottom removal liquid nozzle 13. The bottom removal liquid piping 45 is equipped with a bottom removal liquid valve 55 that opens and closes the bottom removal liquid piping 45.

[0164] The bottom surface removal liquid nozzle 13 has an outlet that faces the peripheral region of the bottom surface of the substrate W. When the bottom surface removal liquid valve 55 is opened, a continuous flow of removal liquid is discharged from the bottom surface removal liquid nozzle 13 toward the peripheral region of the bottom surface. The bottom surface removal liquid nozzle 13 only needs to supply the removal liquid to the bottom surface of the substrate W and does not necessarily need to discharge the removal liquid toward the peripheral region of the bottom surface of the substrate W. vinegar There is no need to do so.

[0165] The bottom surface removal liquid nozzle 13 and the bottom surface rinsing liquid nozzle 12 may be commonly supported by a single holder 31. The holder 31 may be fixed in position relative to the spin chuck 5, or it may be movable in a direction along the bottom surface of the substrate W.

[0166] <First example of substrate processing according to the second embodiment> Figure 12 is a flowchart illustrating a first example of substrate processing performed by the substrate processing apparatus 1A. Figures 13A to 13E are schematic diagrams illustrating the state of the substrate W and its surroundings when the first example of substrate processing is being performed by the substrate processing apparatus 1A.

[0167] In the first example of substrate processing according to the second embodiment, for example, as shown in Figure 12, the following steps are performed: loading process (step S21), coating process (step S22), peripheral coating removal process (step S23), peripheral area cleaning process (step S24), rinsing process (step S25), polymer film removal process (step S26), spin drying process (step S27), and unloading process (step S28).

[0168] The following section will primarily refer to Figures 11 and 12 to describe the details of the first example of substrate processing according to the second embodiment. Figures 13A to 13E will be referred to as appropriate.

[0169] First, the unprocessed substrate W is First transport robot IR and The substrate W is transported from the carrier C to the wet processing unit 2W by the second transport robot CR (see Figure 10) and then passed to the spin chuck 5 (transport process: step S21). The substrate W is then held in the processing position by the spin chuck 5 (substrate holding process). At this time, the substrate W is held in the spin chuck 5 with the first main surface W1 facing upwards. The substrate W continues to be held by the spin chuck 5 until the spin-drying process (step S27) is completed. The spin chuck 5 begins to rotate the substrate W while holding it (substrate rotation process).

[0170] After the second transport robot CR retracts from the chamber 4, a coating step (step S22) is performed to form a polymer film 100 that covers the peripheral region PA and the inner region IA of the upper surface of the substrate W, as shown in Figures 13A and 13B. The details of the coating step (step S22) are the same as those of the coating step (step S2) of the substrate processing according to the first embodiment, so their explanation is omitted.

[0171] After the polymer film 100 is formed, a peripheral coating removal step (step S23) is performed to remove the peripheral coating portion 101 of the polymer film 100.

[0172] Specifically, the bottom surface removal liquid valve 55 is opened. As a result, as shown in Figure 13C, the removal liquid is discharged from the bottom surface removal liquid nozzle 13 toward the peripheral region of the bottom surface (second main surface W2) of the substrate W (second main surface removal liquid discharge step).

[0173] The removal liquid discharged from the bottom removal liquid nozzle 13 lands on the peripheral region of the bottom surface of the substrate W. The removal liquid that has landed on the bottom surface of the substrate W spreads toward the peripheral edge T of the substrate W due to centrifugal force caused by the rotation of the substrate W. At least a portion of the removal liquid is supplied to the peripheral region PA via the peripheral edge T of the substrate W (peripheral removal liquid supply step). The removal liquid supplied to the peripheral region PA via the peripheral edge T of the substrate W is scattered from the peripheral edge T of the substrate W due to centrifugal force.

[0174] When the removal solution is supplied to the peripheral region PA, the peripheral coating portion 101 of the polymer film 100 is removed from the peripheral region PA on the upper surface of the substrate W. Specifically, the peripheral coating portion 101 is dissolved in the removal solution, and the removal solution containing the dissolved peripheral coating portion 101 is discharged from the upper surface of the substrate W. It is not necessary for all of the peripheral coating portion 101 to be dissolved in the removal solution; a portion of the peripheral coating portion 101 may be peeled off from the upper surface of the substrate W by the flow of the removal solution and discharged from the upper surface of the substrate W. With the removal of the peripheral coating portion 101 of the polymer film 100, the peripheral region PA on the upper surface of the substrate W is exposed (peripheral exposure step).

[0175] Even after the peripheral exposure process, the inner region IA on the upper surface of the substrate W is covered by the inner coating portion 102 of the polymer film 100. In other words, the inner region IA on the upper surface of the substrate W is protected by the inner coating portion 102 of the polymer film 100. The inner coating portion 102 functions as a protective film. Thus, by performing the peripheral coating removal process, a polymer film 100 is formed that exposes the peripheral region PA and covers the inner region IA (polymer film formation process).

[0176] After the removal liquid is supplied for a predetermined period, the bottom removal liquid valve 55 is closed to stop the discharge of the removal liquid from the bottom removal liquid nozzle 13. After the discharge of the removal liquid is stopped, the peripheral region cleaning step (step S24), rinsing step (step S25) shown in Figure 13D, and the polymer film removal step (step S26) shown in Figure 13E are performed. The peripheral region cleaning step (step S24), rinsing step (step S25), and polymer film removal step (step S26) are the same as the peripheral region cleaning step (step S9), rinsing step (step S10), and polymer film removal step (step S11) of the substrate processing according to the first embodiment, respectively, so their descriptions are omitted.

[0177] Next, a spin-drying process (step S27) is performed in which the substrate W is rotated at high speed to dry the upper surface of the substrate W. Specifically, the removal liquid valve 53 is closed to stop the supply of removal liquid to the upper surface of the substrate W, and the first nozzle drive mechanism 27 retracts the removal liquid nozzle 11 to a retracted position. Then, the spin chuck 5 accelerates the rotation of the substrate W, causing the substrate W to rotate at high speed (for example, 1500 rpm). As a result, a large centrifugal force acts on the removal liquid adhering to the substrate W, causing the removal liquid to be swept away around the substrate W.

[0178] After the spin-drying process (step S27), the spin chuck 5 stops the rotation of the substrate W. Then, the second transport robot CR enters the wet processing unit 2WA, receives the processed substrate W from the spin chuck 5, and transports it out of the wet processing unit 2WA (transport process: step S28). The substrate W is then passed from the second transport robot CR to the first transport robot IR, which then places it into the carrier C.

[0179] When the wet processing unit 2WA has the configuration of the first example shown in Figure 11, it provides the following effects in addition to the same effects as the substrate processing apparatus 1 of the first embodiment.

[0180] Specifically, the removal liquid discharged from the lower removal liquid nozzle 13 can be supplied to the peripheral region PA without reaching the inner region IA. This allows for selective removal of the peripheral coating portion 101.

[0181] <Configuration of a second example of a wet processing unit according to the second embodiment> Figure 14 is a schematic diagram illustrating the configuration of a second example of the wet processing unit 2WA according to the second embodiment. The main difference between the second example of the wet processing unit 2WA according to the second embodiment and the wet processing unit 2W according to the first embodiment is that it is provided with an inclined removal liquid nozzle 14 that discharges the removal liquid at an angle to the upper surface of the substrate W toward the peripheral region PA of the upper surface (first main surface W1) of the substrate W. The inclined removal liquid nozzle 14 faces the inner region IA of the upper surface of the substrate W. The inclined removal liquid nozzle 14 is an example of a removal liquid discharge member.

[0182] The removal liquid discharged from the inclined removal liquid nozzle 14 can be any of the liquids listed as removal liquids discharged from the removal liquid nozzle 11.

[0183] The inclined removal liquid nozzle 14 has an inclined discharge port 14a that discharges the removal liquid in a direction inclined with respect to the upper surface, that is, in a direction inclined with respect to the horizontal.

[0184] The inclined removal liquid nozzle 14 is connected to an inclined removal liquid pipe 46 that guides the removal liquid to the inclined removal liquid nozzle 14. The inclined removal liquid pipe 46 is equipped with an inclined removal liquid valve 56 that opens and closes the inclined removal liquid pipe 46. When the inclined removal liquid valve 56 is opened, a continuous flow of removal liquid is discharged from the inclined removal liquid nozzle 14.

[0185] The inclined removal liquid nozzle 14 is moved integrally in a direction (horizontal direction) along the upper surface of the substrate W by the second nozzle drive mechanism 32. The second nozzle drive mechanism 32 can move the inclined removal liquid nozzle 14 between a central position and a retracted position. The second nozzle drive mechanism 32 can also position the inclined removal liquid nozzle 14 at the periphery.

[0186] The second nozzle drive mechanism 32 includes an arm (not shown) that supports the inclined removal liquid nozzle 14, and an arm drive mechanism (not shown) that moves the arm in a direction along the upper surface of the substrate W (horizontal direction). The arm drive mechanism includes an actuator such as an electric motor or an air cylinder.

[0187] The inclined removal liquid nozzle 14 may be a rotary nozzle that rotates around a predetermined pivot axis, or a linear nozzle that moves linearly in the direction in which the arm extends. The inclined removal liquid nozzle 14 may also be configured to move in the vertical direction.

[0188] <Second example of substrate processing according to the second embodiment> A second example of the wet processing unit 2W according to the second embodiment can perform the same substrate processing as the first example of substrate processing according to the second embodiment shown in Figure 12. However, the method for removing the peripheral coating portion 101 in the peripheral coating portion removal step (step S23) is different.

[0189] Specifically, in the peripheral coating removal step (step S23), the inclined removal liquid nozzle 14 is first moved to the peripheral position by the second nozzle drive mechanism 32.

[0190] With the inclined removal liquid nozzle 14 positioned at the peripheral edge, the inclined removal liquid valve 56 is opened. As a result, as shown in Figure 15, the removal liquid is discharged from the inclined removal liquid nozzle 14 toward the peripheral region PA of the upper surface (first main surface W1) of the substrate W (inclined removal liquid discharge process).

[0191] The removal liquid discharged from the inclined removal liquid nozzle 14 lands on the peripheral region PA of the upper surface of the substrate W. The removal liquid that has landed on the peripheral region PA moves toward the peripheral edge T of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the peripheral edge T of the substrate W.

[0192] Therefore, the peripheral coating portion 101 of the polymer film 100 is removed from the peripheral region PA of the upper surface of the substrate W. Specifically, the peripheral coating portion 101 is dissolved in the removal solution, and the removal solution containing the dissolved peripheral coating portion 101 is discharged from the upper surface of the substrate W. It is not necessary for the entire peripheral coating portion 101 to be dissolved in the removal solution; a portion of the peripheral coating portion 101 may be peeled off from the upper surface of the substrate W by the flow of the removal solution and discharged from the upper surface of the substrate W.

[0193] The peripheral coating portion 101 of the polymer film 100 is removed, exposing the peripheral region PA of the upper surface of the substrate W (peripheral exposure step). By performing the peripheral coating portion removal step (step S23), a polymer film 100 is formed that exposes the peripheral region PA and covers the inner region IA (polymer film formation step).

[0194] When the wet processing unit 2WA has the configuration of the second example shown in Figure 14, it provides the same effects as the substrate processing apparatus 1 of the first embodiment, in addition to the following effects.

[0195] Specifically, the removal liquid is discharged from the inclined removal liquid nozzle 14 at an angle toward the peripheral region PA on the upper surface of the substrate W. Therefore, it is possible to supply the removal liquid to the peripheral coating portion 101 that covers the peripheral region PA while suppressing the flow of the removal liquid into the inner region IA. Thus, the removal liquid can be directly supplied from the inclined removal liquid nozzle 14 to the peripheral region PA without the removal liquid supplied to the lower surface of the substrate W flowing down to the peripheral edge T of the substrate W. Compared to the case where the removal liquid is supplied from the lower surface to the peripheral region PA on the upper surface by letting it flow down to the peripheral edge T of the substrate W, the peripheral coating portion 101 can be removed with greater precision.

[0196] <Configuration of a third example of a wet processing unit according to the second embodiment> Figure 16 is a schematic diagram illustrating the configuration of a third example of the wet treatment unit 2WA according to the second embodiment. The main difference between the third example of the wet treatment unit 2WA according to the second embodiment and the wet treatment unit 2W according to the first embodiment is that, instead of the bottom rinse liquid nozzle 12, a bottom hydrophobic liquid nozzle 15 is provided on the bottom surface of the substrate W, which discharges the hydrophobic liquid toward the peripheral region PA. The bottom hydrophobic liquid nozzle 15 is an example of a hydrophobic liquid discharge member.

[0197] The hydrophobic liquid discharged from the lower hydrophobic liquid nozzle 15 is a liquid that increases the contact angle of the upper surface of the substrate W with respect to pure water. Hydrophobicization increases the contact angle of the main surface of the substrate W to, for example, 90° or more.

[0198] The hydrophobic solution can be, for example, a silicon-based hydrophobic solution that hydrophobicizes silicon itself and silicon-containing compounds, or a metal-based hydrophobic solution that hydrophobicizes metal itself and metal-containing compounds.

[0199] The metal-based hydrophobic solution contains, for example, an amine having a hydrophobic group and at least one organosilicon compound.

[0200] Silicone-based hydrophobic solutions include, for example, silane coupling agents. Silane coupling agents include, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorohydrophobic agents.

[0201] Non-chlorohydrophobic solutions include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and at least one organosilane compound.

[0202] The bottom hydrophobic liquid nozzle 15 is connected to a bottom hydrophobic liquid piping 47 that guides the hydrophobic liquid to the bottom hydrophobic liquid nozzle 15. The bottom hydrophobic liquid piping 47 is equipped with a bottom hydrophobic liquid valve 57 that opens and closes the bottom hydrophobic liquid piping 47.

[0203] The bottom hydrophobic liquid nozzle 15 is fixed in position relative to the spin chuck 5 and is directed toward the peripheral region of the bottom surface of the substrate W. When the bottom hydrophobic liquid valve 57 is opened, a continuous flow of hydrophobic liquid is discharged from the bottom hydrophobic liquid nozzle 15 toward the peripheral region of the bottom surface. The bottom hydrophobic liquid nozzle 15 only needs to supply hydrophobic liquid to the bottom surface of the substrate W and does not necessarily need to discharge the hydrophobic liquid toward the peripheral region of the bottom surface of the substrate W.

[0204] <Third example of substrate processing according to the second embodiment> Figure 17 is a flowchart illustrating a third example of substrate processing performed by the substrate processing apparatus 1A. Figures 18A to 18C are schematic diagrams illustrating the state of the substrate W when the third example of substrate processing according to the second embodiment is being performed.

[0205] In the third example of the substrate processing according to the second embodiment, unlike the first example of the substrate processing according to the second embodiment shown in Figure 12, a hydrophobicization step is performed to hydrophobize the peripheral region PA of the upper surface (first main surface W1) of the substrate W before the polymer film 100 is formed.

[0206] Specifically, as shown in Figure 17, the following steps are performed: loading process (step S21), hydrophobicization process (step S29), polymer film formation process (step S30), peripheral area cleaning process (step S24), rinsing process (step S25), polymer film removal process (step S26), spin drying process (step S27), and unloading process (step S28).

[0207] The following section will primarily refer to Figures 16 and 17 to describe the details of a third example of substrate processing according to the second embodiment. Figures 18A to 18C will be referred to as appropriate. Sections similar to those in the first example of substrate processing according to the second embodiment will be omitted from the explanation.

[0208] After the loading process (step S21), a hydrophobicization process (step S29) is performed to hydrophobize the peripheral region PA on the upper surface of the substrate W.

[0209] Specifically, the bottom hydrophobic liquid valve 57 is opened. As a result, as shown in Figure 18A, the hydrophobic liquid is discharged from the bottom hydrophobic liquid nozzle 15 toward the peripheral region of the bottom surface of the substrate W.

[0210] The hydrophobic solution applied to the lower surface of the substrate W spreads toward the periphery T of the substrate W due to centrifugal force caused by the rotation of the substrate W. At least a portion of the hydrophobic solution is supplied to the peripheral region PA along the periphery T of the substrate W (hydrophobic solution supply step). The hydrophobic solution supplied to the peripheral region PA along the periphery T of the substrate W is scattered from the periphery T of the substrate W due to centrifugal force. As a result of the supply of hydrophobic solution to the peripheral region PA of the upper surface of the substrate W, the peripheral region PA is made hydrophobic.

[0211] After the peripheral region PA on the upper surface of the substrate W is made hydrophobic, a polymer film formation step (step S30) is performed to form a polymer film 100 on the upper surface of the substrate W.

[0212] Specifically, the lower hydrophobic liquid valve 57 is closed, and the discharge of the hydrophobic liquid from the lower hydrophobic liquid nozzle 15 is stopped. After the discharge of the hydrophobic liquid is stopped, the first nozzle drive mechanism 27 moves the polymer-containing liquid nozzle 8 to the processing position. The processing position of the polymer-containing liquid nozzle 8 is, for example, the central position. With the polymer-containing liquid nozzle 8 in the processing position, the polymer-containing liquid valve 50 is opened. As a result, as shown in Figure 18B, the polymer-containing liquid is supplied (discharged) from the polymer-containing liquid nozzle 8 toward the central area CP (inner region IA) of the upper surface of the substrate W (polymer-containing liquid supply process, polymer-containing liquid discharge process).

[0213] The polymer-containing liquid discharged from the polymer-containing liquid nozzle 8 lands on the central CP of the upper surface of the substrate W. The polymer-containing liquid that has landed on the upper surface of the substrate W spreads toward the periphery T of the substrate W due to the centrifugal force caused by the rotation of the substrate W. Here, since the peripheral region PA of the upper surface of the substrate W is hydrophobic, the polymer-containing liquid does not remain in the peripheral region PA and is removed from the peripheral region PA. Therefore, the inner region IA can be covered with the polymer-containing liquid while the peripheral region PA is exposed.

[0214] After supplying the polymer-containing liquid to the upper surface of the substrate W for a predetermined period, the polymer-containing liquid valve 50 is closed. This stops the discharge of the polymer-containing liquid from the polymer-containing liquid nozzle 8. After the discharge of the polymer-containing liquid is stopped, the rotation of the substrate W continues, causing a portion of the polymer-containing liquid on the substrate W to scatter from the periphery T of the substrate W to the outside of the substrate W. This thins the liquid film of the polymer-containing liquid on the substrate W (spin-off process, thinning process). After the polymer-containing liquid valve 50 is closed, the polymer-containing liquid nozzle 8 is moved to a retracted position by the first nozzle drive mechanism 27.

[0215] The centrifugal force caused by the rotation of the substrate W acts not only on the polymer-containing liquid on the substrate W, but also on the gas in contact with the polymer-containing liquid on the substrate W. As a result, the centrifugal force creates a radial airflow directed toward the periphery T of the substrate W. This airflow removes the gaseous solvent in contact with the polymer-containing liquid on the substrate W from the atmosphere in contact with the substrate W. Therefore, as shown in Figure 18C, the evaporation (volatilization) of the solvent from the polymer-containing liquid on the substrate W is promoted, and a polymer film 100 having an inner coating portion 102 covering the inner region IA is formed (evaporation formation step). Because hydrophobicity suppresses the residue of the polymer-containing liquid in the peripheral region PA, the formation of the polymer film 100 on the peripheral region PA is suppressed.

[0216] Unlike the first example of substrate processing according to the second embodiment, in the third example of substrate processing according to the second embodiment, since the polymer film 100 is not formed in the peripheral region PA, it is not necessary to perform the peripheral coating removal step. Furthermore, the peripheral region cleaning step (step S24) to the unloading step (step S28) are then performed.

[0217] When the wet processing unit 2WA has the configuration of the third example shown in Figure 17, it provides the following effects in addition to the same effects as the substrate processing apparatus 1 of the first embodiment.

[0218] Specifically, the peripheral region PA can be made hydrophobic. Therefore, adhesion of the polymer-containing liquid to the peripheral region PA can be suppressed. On the other hand, since the inner region IA is not hydrophobic, the polymer-containing liquid tends to remain on the inner region IA. Therefore, by supplying the polymer-containing liquid to the entire first main surface, a polymer film 100 can be formed that covers the inner region IA while leaving the peripheral region PA exposed, without requiring any special consideration of the method of supplying the polymer-containing liquid.

[0219] Unlike the third example of the wet processing unit 2WA, a gradient hydrophobic liquid nozzle 16 facing the upper surface of the substrate W may be provided, as shown by the dashed line in Figure 16. In that case, during the hydrophobicization process (step S29), the gradient hydrophobic liquid nozzle 16 discharges the hydrophobic liquid obliquely to the upper surface of the substrate W toward the peripheral region PA of the upper surface of the substrate W.

[0220] Furthermore, in the third example of the substrate processing according to the second embodiment, it was stated that it is not necessary to perform the peripheral coating removal step. However, after the polymer film formation step (step S30) and before the peripheral region cleaning step (step S24), the removal liquid may be supplied to the peripheral region PA. By doing so, even if a small amount of polymer adheres to the peripheral region PA due to the supply of the polymer-containing liquid, the polymer can be removed from the peripheral region PA.

[0221] Furthermore, after the third example of substrate processing according to the second embodiment is performed, a hydrophilization process may be performed to make the hydrophobic regions on the upper and lower surfaces of the substrate W hydrophilic again.

[0222] <Other Embodiments> This invention is not limited to the embodiments described above, and can be implemented in other forms.

[0223] (1) In each of the embodiments described above, except for the third example of substrate processing according to the second embodiment (see Figures 17 to 18C), the entire upper surface of the substrate W is covered with the polymer film 100, and then the peripheral covering portion 101 of the polymer film 100 is removed, thereby exposing the peripheral region PA while covering the inner region IA with the polymer film 100. In the third example of substrate processing according to the second embodiment, the peripheral region PA is made hydrophobic, thereby exposing the peripheral region PA while covering the inner region IA with the polymer film 100.

[0224] In other words, in each embodiment, a polymer film formation step is performed to form the polymer film 100 such that the peripheral region PA is exposed and the inner region IA is covered. The method for forming the polymer film 100 is not limited to the embodiments described above. As long as the polymer film 100 can be formed such that the peripheral region PA is exposed and the inner region IA is covered, a method different from the embodiments described above may be used to form the polymer film 100.

[0225] (2) By applying the wet processing unit 2WA according to the second embodiment to the substrate processing apparatus 1 according to the first embodiment, the substrate processing described in the second embodiment can also be performed. That is, if the wet processing unit 2WA is provided, each substrate processing according to the second embodiment can be performed regardless of whether or not the dry processing unit 2D is present.

[0226] (3) The processing position does not necessarily have to be horizontal. That is, unlike in Figures 2, 11, 14, and 16, the processing position may be vertical, or the main surface of the substrate W may be inclined with respect to the horizontal plane.

[0227] Furthermore, the substrate W may be held so that its first main surface W1 is the lower surface. That is, unlike the substrate processing according to the embodiments described above, processing may be performed on the lower surface of the substrate W. Specifically, the substrate processing apparatus may be configured to perform a substrate processing in which a polymer film is formed on the lower surface of the substrate W such that the peripheral region of the lower surface of the substrate W is exposed and the inner region of the lower surface of the substrate W is covered, and the peripheral region of the lower surface of the substrate W is cleaned with a first cleaning solution.

[0228] (4) In each of the embodiments described above, the system is configured to discharge multiple processing liquids from multiple nozzles. However, the manner in which the processing liquids are discharged is not limited to the embodiments described above. For example, unlike the embodiments described above, the processing liquids may be discharged from fixed nozzles whose positions are fixed within the chamber 4, or the system may be configured so that all the processing liquids are discharged from a single nozzle toward the upper surface of the substrate W. Also, if a liquid different from the rinsing liquid is used as the second cleaning liquid, a nozzle for discharging the second cleaning liquid (second cleaning liquid discharging member) may be provided separately from the rinsing liquid nozzle 10.

[0229] Furthermore, multiple nozzles that supply the processing liquid to the peripheral region PA on the upper surface of the substrate W may be provided along the circumferential direction of the spin base 20 (which is also the rotation direction of the substrate W).

[0230] Multiple bottom rinse liquid nozzles 12 may be provided along the circumferential direction of the spin base 20. By discharging rinse liquid from multiple bottom rinse liquid nozzles 12 toward the bottom surface of the substrate W, rinse liquid can be evenly supplied to the bottom surface of the substrate W over the entire circumferential area. Beauty The same applies to the lower hydrophobic liquid nozzle 15.

[0231] Furthermore, while nozzles are used as examples of members that discharge the processing liquid in the embodiments described above, the members that discharge the processing liquid are not limited to nozzles. In other words, any member that functions as a processing liquid discharging member when discharging the processing liquid is acceptable.

[0232] (5) In each of the embodiments described above, a polymer-containing liquid is supplied in a continuous flow to the upper surface of the substrate W, and the polymer film 100 is formed by spreading the polymer-containing liquid with centrifugal force. However, the method of supplying the polymer-containing liquid is not limited to the methods described above (see Figures 6A, 6B, 13A, and 13B).

[0233] For example, the polymer-containing liquid nozzle 8 may be moved along the upper surface of the substrate W while supplying the polymer-containing liquid to the upper surface of the substrate W. Also, unlike the embodiments described above, when forming the polymer film 100, the polymer-containing liquid on the substrate W may be heated to promote the evaporation of the solvent and thereby promote the formation of the polymer film 100.

[0234] Furthermore, unlike the embodiments described above, a polymer film 100 may be formed on the upper surface of the substrate W by applying the polymer-containing liquid to the upper surface of the substrate W. Specifically, the polymer-containing liquid may be applied to the upper surface of the substrate W by moving a bar-shaped coating member, on which the polymer-containing liquid is attached, along the upper surface of the substrate W while keeping it in contact with the upper surface of the substrate W.

[0235] (6) In the peripheral region cleaning steps (steps S9, S23) of each of the embodiments described above, the first cleaning liquid is discharged toward the peripheral region PA of the upper surface of the substrate W. Unlike the embodiments described above, as shown in Figure 19, in the peripheral region cleaning steps (steps S9, S23), the first cleaning liquid may be discharged from the first cleaning liquid nozzle 9 toward the inner region IA of the upper surface of the substrate W.

[0236] By doing so, the peripheral region PA can be cleaned while protecting the inner coating portion 102 formed in the inner region IA with the first cleaning solution. In addition, the first cleaning solution discharged toward the inner region IA adheres to the surface of the inner coating portion 102 of the polymer film 100. The first cleaning solution adhering to the inner coating portion 102 spreads radially over the inner coating portion 102, passes through the peripheral region PA, and is discharged outside the substrate W. Therefore, compared to the case where the first cleaning solution discharged from the first cleaning solution nozzle 9 adheres to the peripheral region PA, a wider area of ​​the peripheral region PA can be cleaned with the first cleaning solution at once.

[0237] (7) Unlike the embodiments described above, the rinsing step (steps S10, S25) may be omitted. Also, in the rinsing step, the rinsing liquid may be discharged towards the inner region IA instead of towards the peripheral region PA. By doing so, the surface of the inner coating portion 102 of the polymer film 100 can be rinsed and the first cleaning liquid that has splashed back from the peripheral region PA and adhered to the inner coating portion 102 in the peripheral region cleaning step (steps S9, S23) can be removed.

[0238] When employing the peripheral region cleaning process shown in Figure 19 above, the first cleaning liquid is reliably applied to the surface of the inner coating portion 102. Therefore, it is preferable to discharge the rinsing liquid toward the inner region IA during the rinsing process.

[0239] (8) Unlike the first embodiment described above, the wet processing unit 2W may be provided with a light emitting member 62. In this case, it is preferable that the light source of the light emitting member 62 is located outside the chamber 4. For example, the light source may be located outside the chamber 4, and the tip of an optical fiber (not shown) that allows light L emitted from the light source to pass through may be located inside the chamber 4. If this is the case, the exposure process can be performed without providing a dry processing unit 2D.

[0240] (9) In each of the embodiments described above, the spin chuck 5 is an adsorption-type spin chuck that adsorbs the substrate W onto the spin base 20. The spin chuck 5 is not limited to an adsorption-type spin chuck. For example, the spin chuck 5 may be a gripping-type spin chuck that grips the periphery of the substrate W with a plurality of gripping pins (not shown). When a gripping-type spin chuck is used, it is preferable to switch the grip of the substrate W between the first group of gripping pins and the second group of gripping pins when supplying the processing liquid to the peripheral region PA of the upper surface of the substrate W.

[0241] (10) In each of the embodiments described above, some illustrations of piping, pumps, valves, actuators, etc. have been omitted, but this does not mean that these components do not exist, and in reality these components are provided in appropriate locations.

[0242] (11) In each of the embodiments described above, the controller 3 controls the entire substrate processing apparatus 1. However, the controllers that control each component of the substrate processing apparatus 1 may be distributed in multiple locations. Furthermore, the controller 3 does not need to directly control each component, and the signals output from the controller 3 may be received by slave controllers that control each component of the substrate processing apparatus 1.

[0243] (12) In the above-described embodiment, the substrate processing apparatus 1,1A comprises a transport robot (first transport robot IR and second transport robot CR), a plurality of processing units 2, and a controller 3. However, the substrate processing apparatus 1,1A may consist of a single processing unit 2 and a controller 3, and may not include a transport robot. Alternatively, the substrate processing apparatus 1,1A may consist of only a single processing unit 2. In other words, the processing unit 2 may be an example of a substrate processing apparatus.

[0244] (13) In the embodiments described above, expressions such as "alongside," "horizontal," "vertical," and "cylindrical" were used, but it is not necessary for them to be strictly "alongside," "horizontal," "vertical," or "cylindrical." In other words, each of these expressions allows for deviations in manufacturing accuracy, installation accuracy, etc.

[0245] (14) In addition, although each component may be schematically represented by blocks, the shape, size, and positional relationship of each block do not represent the shape, size, and positional relationship of each component.

[0246] In addition, various modifications can be made within the scope of the claims. [Explanation of Symbols]

[0247] 1: Substrate processing equipment 1A: Substrate processing equipment 9: First cleaning fluid nozzle (first cleaning fluid discharge member) 10: Rinse liquid nozzle (second cleaning liquid discharge member) 13: Bottom removal liquid nozzle (removal liquid discharge member) 14: Inclined removal liquid nozzle (removal liquid discharge member) 15: Bottom hydrophobic liquid nozzle (hydrophobic liquid discharge member) 100: Polymer film 101: Peripheral covering portion 102: Inner covering IA: Inner area PA: Peripheral region W: Circuit board W1: First main surface W2: Second main surface

Claims

1. A substrate processing method for processing a substrate having a first main surface and a second main surface opposite to the first main surface, A polymer film forming step, in which a polymer film is formed such that the peripheral region of the first main surface is exposed and the inner region located inside the peripheral region of the first main surface and adjacent to the peripheral region is covered, After the polymer film formation step, a first cleaning solution supply step is performed to supply the first cleaning solution to the first main surface so that the polymer film is maintained on the first main surface. A substrate processing method comprising: a removal liquid supply step, after the first cleaning liquid supply step, a removal liquid that is more likely to dissolve the polymer film than the first cleaning liquid, to the first main surface, thereby removing the polymer film from the first main surface without performing any processing to form a pattern on the polymer film after the polymer film formation step.

2. The polymer film formation step is A coating step for forming the polymer film having a peripheral covering portion that covers the peripheral region and an inner covering portion that covers the inner region, A substrate processing method according to claim 1, comprising a peripheral exposure step of exposing the peripheral region by removing the peripheral covering portion from the first main surface.

3. The aforementioned peripheral exposure step is An exposure step of exposing the peripheral covering portion, The substrate processing method according to claim 2, further comprising, after the exposure step, a second cleaning liquid supply step of discharging a second cleaning liquid from a second cleaning liquid discharge member toward the first main surface, the second cleaning liquid being more easily dissolved than the inner coating portion when exposed.

4. The substrate processing method according to claim 3, wherein the second cleaning liquid supply step includes a step of discharging the second cleaning liquid from the second cleaning liquid discharge member toward the inner region.

5. The substrate processing method according to claim 2, wherein the peripheral edge exposure step includes a peripheral edge removal liquid supply step of discharging a removal liquid from a removal liquid discharge member facing the second main surface toward the second main surface, and supplying the removal liquid to the peripheral region by allowing it to flow along the peripheral edge of the substrate.

6. The substrate processing method according to claim 2, wherein the peripheral exposure step includes an inclined removal liquid discharge step in which a removal liquid discharge member facing the first main surface discharges a removal liquid obliquely to the first main surface toward the peripheral region.

7. The substrate processing method according to any one of claims 1 to 6, wherein the first cleaning liquid supply step includes a step of discharging the first cleaning liquid from the first cleaning liquid discharge member toward the inner region.

8. The process further includes a hydrophobicization step to make the peripheral region hydrophobic before the polymer film formation step, The substrate processing method according to any one of claims 1 to 7, wherein the polymer film formation step includes a polymer-containing liquid supply step of supplying a polymer-containing liquid containing a polymer and a solvent to a first main surface, and an evaporation formation step of evaporating the solvent from the polymer-containing liquid on the first main surface to form the polymer film.

9. The substrate processing method according to claim 8, wherein the hydrophobicization step includes a hydrophobic liquid supply step of discharging a hydrophobic liquid from a hydrophobic liquid discharging member toward the second main surface and allowing the hydrophobic liquid to flow along the periphery of the substrate to reach the peripheral region.

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