Control parameter setting method, substrate processing device, and storage medium

Abstract

To reduce the difference in film thickness formed on substrates in different modules.SOLUTION: A control parameter setting method includes: obtaining a first parameter group, which is a control parameter group containing a plurality of control parameters to control a film formation process in a first film formation module, and a second parameter group, which is a control parameter group to control a film formation process in a second film formation module; obtaining film thickness values of treated films with respect to a substrate after the film formation by the first film formation module on the basis of the first parameter group and a substrate after the film formation by the second film formation module on the basis of the second parameter group; and updating the first parameter group and the second parameter group so as to reduce a difference between the film thickness value of the substrate obtained by the first film formation module and the film thickness value of the substrate obtained by the second film formation module.SELECTED DRAWING: Figure 10

Description

Technical Field

[0001] The present disclosure relates to a control parameter setting method, a substrate processing apparatus, and a storage medium.

Background Art

[0002] In Patent Document 1, based on measurement data such as resist film thickness in a main pattern forming apparatus, a correction amount related to pattern formation in the main pattern apparatus is determined, and a correction amount in a pattern forming apparatus different from the main pattern forming apparatus is also determined.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of reducing the difference in film thickness formed on a substrate in different modules.

Means for Solving the Problems

[0005] A control parameter setting method according to an aspect of the present disclosure is a control parameter setting method for setting control parameters of a film forming module included in a substrate processing apparatus, the method including: obtaining a first parameter group which is a control parameter group including a plurality of control parameters for controlling film forming processing in a first film forming module, and a second parameter group which is a control parameter group for controlling film forming processing in a second film forming module; obtaining a film thickness value of a processed film with respect to a substrate after film forming by the first film forming module based on the first parameter group; obtaining a film thickness value of a processed film with respect to a substrate after film forming by the second film forming module based on the second parameter group; and updating the first parameter group and the second parameter group so that a difference between the film thickness value of the substrate obtained by the first film forming module and the film thickness value of the substrate obtained by the second film forming module becomes small.

Effects of the Invention

[0006] According to the present disclosure, a technique capable of reducing the difference in film thickness formed on a substrate in different modules is provided.

Brief Description of the Drawings

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of a substrate processing system. [Figure 2] FIG. 2 is a schematic diagram showing an example of a coating and developing apparatus. [Figure 3] FIG. 3 is a schematic diagram showing an example of a liquid processing unit. [Figure 4] FIG. 4 is a schematic diagram showing an example of a measurement unit. [Figure 5] FIG. 5 is a block diagram showing an example of a functional configuration of a control device. [Figure 6] FIGS. 6(a) to 6(c) are diagrams for explaining the concept of parameter correction between modules by a control device. [Figure 7] FIG. 7 is a block diagram showing an example of a hardware configuration of a control device. [Figure 8] Figure 8 is a flowchart showing an example of a method for setting control parameters. [Figure 9] Figures 9(a) and 9(b) illustrate an example of a method for calculating correction values ​​for control parameters. [Figure 10] Figure 10 is a sequence diagram showing an example of a method for calculating parameter sensitivity. [Figure 11] Figure 11 is a sequence diagram showing an example of a method for calculating parameter correction values. [Figure 12] Figure 12 is a sequence diagram showing an example of a method for calculating the offset amount. [Figure 13] Figures 13(a) and 13(b) are sequence diagrams illustrating an example of a method for sharing parameter correction values. [Figure 14] Figure 14 shows an example of a method for sharing parameter sensitivity information between coating and developing devices. [Figure 15] Figure 15 is a flow chart showing an example of a method for adjusting the discharge pressure of the processing fluid according to the valve closing timing. [Figure 16] Figures 16(a) and 16(b) illustrate an example of a method for adjusting the discharge pressure of the processing fluid according to the valve closing timing. [Figure 17] Figures 17(a) to 17(c) illustrate an example of a method for adjusting the discharge pressure of the processing fluid according to the valve closing timing. [Modes for carrying out the invention]

[0008] Various exemplary embodiments will be described below.

[0009] In one exemplary embodiment, the control parameter setting method is a control parameter setting method for setting control parameters of a film formation module included in a substrate processing apparatus, and includes: obtaining a first parameter group which is a group of control parameters including a plurality of control parameters for controlling the film formation process in a first film formation module, and a second parameter group which is a group of control parameters for controlling the film formation process in a second film formation module; obtaining a film thickness value of the processed film for a substrate after film formation by the first film formation module based on the first parameter group; obtaining a film thickness value of the processed film for a substrate after film formation by the second film formation module based on the second parameter group; and updating the first parameter group and the second parameter group so that the difference between the film thickness value of the substrate obtained by the first film formation module and the film thickness value of the substrate obtained by the second film formation module becomes smaller.

[0010] According to the control parameter setting method described above, the film thickness value of the processed film on the substrate after film formation by the first film formation module is obtained based on the first parameter group, and the film thickness value of the processed film on the substrate after film formation by the second film formation module is obtained based on the second parameter group. The first and second parameter groups are then updated so that the difference between these two values ​​becomes smaller. As a result, the difference in film thickness formed on the substrate by different modules is reduced.

[0011] This embodiment may further include obtaining the film thickness value of the processed film with respect to the substrate after film formation by the first film formation module based on the updated first set of parameters, and the substrate after film formation by the second film formation module based on the updated second set of parameters.

[0012] As described above, by obtaining the film thickness value of the processed film on the substrate after film formation using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced by the updated first and second parameter groups. Therefore, if the difference in film thickness values ​​has not been reduced, it is possible to take measures such as updating the first and second parameter groups again, thereby further reducing the difference in film thickness formed on the substrate in different modules.

[0013] The film forming module includes a holding and rotating unit for holding and rotating a substrate, and a processing liquid supply unit for supplying a processing liquid to the rotating substrate, and the first parameter group and the second parameter group may include at least parameters for adjusting the discharge state from the processing liquid supply unit.

[0014] If the film formation module includes a processing liquid supply unit, the discharge state of the processing liquid from the processing liquid supply unit may affect the film thickness. Therefore, by using a parameter that adjusts the discharge state of the processing liquid as a control parameter, it becomes possible to adjust the film thickness to minimize the difference.

[0015] The processing liquid supply unit may have a valve that controls the flow of processing liquid in the processing liquid flow path by opening and closing, and the parameter for adjusting the discharge state may be the closing timing of the valve.

[0016] If the film formation module includes a processing liquid supply unit, the flow of the processing liquid through the valve can affect the film thickness. Therefore, by using the valve closing timing as a parameter to adjust the discharge state of the processing liquid, it becomes possible to adjust the film thickness to minimize the difference.

[0017] The processing liquid supply unit may be capable of changing the discharge pressure of the processing liquid, and when the closing timing of the valve included in the first parameter group or the second parameter group is updated, the discharge pressure may be updated based on the changed closing timing so that the amount of processing liquid supplied from the processing liquid supply unit remains constant.

[0018] Changing the valve closing timing affects the amount of processing fluid supplied, but changing the amount of processing fluid supplied can cause the film thickness to deviate significantly from a predetermined value. Therefore, by updating the discharge pressure based on the changed closing timing as described above, so that the amount of processing fluid supplied from the processing fluid supply unit remains constant, it is possible to suppress fluctuations in film thickness caused by changing the amount of processing fluid supplied.

[0019] The control parameter group may include the rotation speed of the holding and rotating part when supplying the processing liquid, or the rotation speed of the holding and rotating part when drying the supplied processing liquid.

[0020] If the film-forming module includes a holding and rotating section, the rotation speed of the holding and rotating section when supplying the processing liquid and when drying the processing liquid can each affect the film thickness. Therefore, by using the rotation speed of the holding and rotating section during processing liquid supply or drying as a control parameter, it becomes possible to adjust the film thickness to minimize the difference.

[0021] The film thickness value is expressed as a film thickness profile consisting of a plurality of components relating to the shape of the film thickness distribution, and the sensitivity of the plurality of control parameters included in the first parameter group and the second parameter group with respect to the film thickness value is further determined based on the relationship with each component included in the film thickness profile, and in updating the first parameter group and the second parameter group, the sensitivity of the plurality of control parameters with respect to the film thickness value is used to update each control parameter included in the first parameter group and the second parameter group.

[0022] By using the above configuration, the film thickness value can be represented as a film thickness profile consisting of multiple components related to the shape of the film thickness distribution, thereby allowing identification of what elements related to the film thickness distribution are included in the film thickness value. Furthermore, by calculating the degree to which each control parameter included in the parameter group contributes to the variation in the film thickness value as a sensitivity to the film thickness value, the control parameters can be updated with greater accuracy when updating them to minimize the difference in film thickness value.

[0023] This embodiment may further include transferring information relating to the sensitivity of the plurality of control parameters to the film thickness value to a substrate processing apparatus other than the substrate processing apparatus.

[0024] This configuration makes it possible to use information related to the sensitivity of multiple control parameters to film thickness values ​​across multiple substrate processing devices, thereby improving convenience.

[0025] This embodiment may further include obtaining an offset amount for the film thickness value when obtaining the film thickness value of the processed film in the first film formation module or the second film formation module.

[0026] When measuring the film thickness of a processed film formed on a substrate, an offset component originating from the measuring device may be included. By configuring the system to acquire the offset amount, it is possible to obtain a film thickness measurement result that takes the offset into account. This information can then be used to make finer adjustments to reduce the difference in film thickness values, enabling more accurate film thickness adjustment.

[0027] The embodiment may further include updating the first parameter group and the second parameter group for multiple types of film formation processes, and further include instructing the execution of a film formation process that combines the updated control parameters for the multiple types of film formation processes obtained for the same film formation module.

[0028] With the above configuration, when performing the same type of film formation process using the same film formation module, it is possible to perform the process using the updated control parameters without having to perform a process to update the control parameters again. Therefore, the convenience of film formation is improved.

[0029] In one exemplary embodiment, the substrate processing apparatus includes a control unit that controls a first film forming module and a second film forming module that perform film forming processing on a substrate, the control unit includes a parameter acquisition unit that acquires a first parameter group which is a group of control parameters for controlling the film forming process in the first film forming module and a second parameter group which is a group of control parameters for controlling the film forming process in the second film forming module; a film thickness information acquisition unit that acquires the film thickness value of the processed film with respect to the substrate after film forming by the first film forming module based on the first parameter group and the substrate after film forming by the second film forming module based on the second parameter group; and a parameter update unit that updates the first parameter group and the second parameter group so that the difference between the film thickness value of the substrate acquired by the first film forming module and the film thickness value of the substrate acquired by the second film forming module becomes smaller.

[0030] According to the substrate processing apparatus described above, the film thickness value of the processed film on the substrate after film formation by the first film formation module is obtained based on the first parameter group, and the film thickness value of the processed film on the substrate after film formation by the second film formation module is obtained based on the second parameter group. The first and second parameter groups are updated so that the difference between these values ​​is minimized. As a result, the difference in film thickness formed on the substrate by different modules is reduced.

[0031] The film thickness information acquisition unit may acquire the film thickness value of the processed film with respect to the substrate after film formation by the first film formation module based on the updated first parameter group, and the substrate after film formation by the second film formation module based on the updated second parameter group.

[0032] As described above, by obtaining the film thickness value of the processed film on the substrate after film formation using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced by the updated first and second parameter groups. Therefore, if the difference in film thickness values ​​has not been reduced, it is possible to take measures such as updating the first and second parameter groups again, thereby further reducing the difference in film thickness formed on the substrate in different modules.

[0033] The film forming module includes a holding and rotating unit for holding and rotating a substrate, and a processing liquid supply unit for supplying a processing liquid to the rotating substrate, and the first parameter group and the second parameter group may include at least parameters for adjusting the discharge state from the processing liquid supply unit.

[0034] If the film formation module includes a processing liquid supply unit, the discharge state of the processing liquid from the processing liquid supply unit may affect the film thickness. Therefore, by using a parameter that adjusts the discharge state of the processing liquid as a control parameter, it becomes possible to adjust the film thickness to minimize the difference.

[0035] The processing liquid supply unit may have a valve that controls the flow of processing liquid in the processing liquid flow path by opening and closing, and the parameter for adjusting the discharge state may be the closing timing of the valve.

[0036] If the film formation module includes a processing liquid supply unit, the flow of the processing liquid through the valve can affect the film thickness. Therefore, by using the valve closing timing as a parameter to adjust the discharge state of the processing liquid, it becomes possible to adjust the film thickness to minimize the difference.

[0037] The processing liquid supply unit may be capable of changing the discharge pressure of the processing liquid, and when the closing timing of the valve included in the first parameter group or the second parameter group is updated, the discharge pressure may be updated based on the changed closing timing so that the amount of processing liquid supplied from the processing liquid supply unit remains constant.

[0038] Changing the valve closing timing affects the amount of processing fluid supplied, but changing the amount of processing fluid supplied can cause the film thickness to deviate significantly from a predetermined value. Therefore, by updating the discharge pressure based on the changed closing timing as described above, so that the amount of processing fluid supplied from the processing fluid supply unit remains constant, it is possible to suppress fluctuations in film thickness caused by changing the amount of processing fluid supplied.

[0039] The control parameter group may include the rotation speed of the holding and rotating part when supplying the processing liquid, or the rotation speed of the holding and rotating part when drying the supplied processing liquid.

[0040] When a film-forming module includes a holding and rotating section, the rotation speed of the holding and rotating section when supplying the processing liquid and when drying the processing liquid can both affect the film thickness. Therefore, by using the rotation speed of the holding and rotating section during processing liquid supply or drying as a control parameter, it becomes possible to adjust the system to minimize the difference in film thickness.

[0041] The film thickness value is expressed as a film thickness profile consisting of a plurality of components relating to the shape of the film thickness distribution, and the control unit further includes a parameter sensitivity calculation unit that determines the sensitivity of the plurality of control parameters included in the first parameter group and the second parameter group with respect to the film thickness value based on the relationship with each component included in the film thickness profile, and the parameter update unit may update each control parameter included in the first parameter group and the second parameter group using the sensitivity of the plurality of control parameters with respect to the film thickness value.

[0042] By using the above configuration, the film thickness value can be represented as a film thickness profile consisting of multiple components related to the shape of the film thickness distribution, thereby allowing identification of what elements related to the film thickness distribution are included in the film thickness value. Furthermore, by calculating the degree to which each control parameter included in the parameter group contributes to the variation in the film thickness value as a sensitivity to the film thickness value, the control parameters can be updated with greater accuracy when updating them to minimize the difference in film thickness value.

[0043] The control unit may further include an offset amount acquisition unit that acquires an offset amount for acquiring the film thickness value when acquiring the film thickness value of the processed film in the first film formation module or the second film formation module.

[0044] When measuring the film thickness of a processed film formed on a substrate, an offset component originating from the measuring device may be included. By configuring the system to acquire the offset amount, it is possible to obtain a film thickness measurement result that takes the offset into account. This information can then be used to make finer adjustments to reduce the difference in film thickness values, enabling more accurate film thickness adjustment.

[0045] The control unit may further include an instruction unit that updates the first parameter group and the second parameter group for multiple types of film formation processes in the parameter update unit, and instructs the execution of a film formation process that combines the updated control parameters for the multiple types of film formation processes obtained for the same film formation module.

[0046] With the above configuration, when performing the same type of film formation process using the same film formation module, it is possible to perform the process using the updated control parameters without having to perform a process to update the control parameters again. Therefore, the convenience of film formation is improved.

[0047] In one exemplary embodiment, a computer-readable storage medium is provided that stores a program for causing the device to execute the control parameter setting method described above. The storage medium has the same effect as the control parameter setting method described above.

[0048] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0049] [Circuit board processing system] The substrate processing system 1 (substrate processing apparatus) shown in Figure 1 is a system that performs the following processes on a workpiece W: formation of a photosensitive film, exposure of the photosensitive film, and development of the photosensitive film. The workpiece W to be processed is, for example, a substrate, or a substrate in which a film or circuit has been formed by a predetermined process. The substrate is, as an example, a silicon wafer. The workpiece W (substrate) may be circular. The workpiece W may also be a glass substrate, a mask substrate, or an FPD (Flat Panel Display). The photosensitive film is, for example, a resist film.

[0050] As shown in Figures 1 and 2, the substrate processing system 1 comprises a coating and developing apparatus 2, an exposure apparatus 3, and a control device 100 (control unit). The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive coating) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the portion of the resist film to be exposed with energy rays by methods such as immersion exposure.

[0051] The coating and developing apparatus 2 applies a resist (chemical solution) to the surface of the workpiece W to form a resist film before exposure processing by the exposure apparatus 3, and then develops the resist film after exposure processing. The coating and developing apparatus 2 comprises a carrier block 4, a processing block 5, and an interface block 6.

[0052] The carrier block 4 introduces the workpiece W into the coating and developing apparatus 2 and takes the workpiece W out of the coating and developing apparatus 2. For example, the carrier block 4 can support multiple carriers C for the workpiece W and incorporates a transport device A1 that includes a transfer arm. The carrier C accommodates, for example, multiple circular workpieces W. The transport device A1 takes the workpiece W from the carrier C and passes it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0053] The processing module 11 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 for transporting the workpiece W to these units. The processing module 11 forms an underlayer film on the surface of the workpiece W using the liquid processing unit U1 and the heat processing unit U2. An example of the underlayer film is an SOC (Spin On Carbon) film. The liquid processing unit U1 applies a processing liquid for underlayer film formation onto the workpiece W. The heat processing unit U2 performs various heat treatments associated with the formation of the underlayer film.

[0054] The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 for transporting the workpiece W to these units. The processing module 12 forms a resist film on the underlying film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for resist film formation onto the underlying film, thereby forming a film of the processing liquid on the underlying film (on the surface of the workpiece W). The heat processing unit U2 performs various heat treatments associated with the formation of the resist film.

[0055] The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 for transporting the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for upper layer film formation onto the resist film. The heat processing unit U2 performs various heat treatments associated with the formation of the upper layer film.

[0056] The processing module 14 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 for transporting workpieces W to these units. The processing module 14 performs development processing and associated heat processing of the exposure-treated resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 develops the resist film by applying a developer solution to the surface of the exposed workpiece W and then washing it off with a rinsing solution. The heat processing unit U2 performs various heat treatments associated with the development process. Specific examples of heat treatments include pre-development heat treatment (PEB: Post Exposure Bake) and post-development heat treatment (PB: Post Bake).

[0057] A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into multiple cells arranged vertically. A transport device A7, including a lifting arm, is provided near the shelf unit U10. The transport device A7 lifts and lowers the workpiece W between the cells of the shelf unit U10. A measurement unit U3, which functions as a measurement unit as described later, is provided inside the shelf unit U10. The measurement unit U3 acquires information regarding the film thickness of the film (underlayer film, resist film, upper layer film, etc.) formed by the liquid treatment unit U1 and the heat treatment unit U2. This will be described later.

[0058] A shelf unit U11 is provided on the interface block 6 side within the processing block 5. The shelf unit U11 is divided into multiple cells arranged vertically.

[0059] Interface block 6 handles the transfer of workpieces W to and from the exposure device 3. For example, interface block 6 incorporates a transport device A8, which includes a transfer arm, and is connected to the exposure device 3. Transport device A8 transfers workpieces W, which are placed on shelf unit U11, to the exposure device 3. Transport device A8 receives workpieces W from the exposure device 3 and returns them to shelf unit U11.

[0060] The control device 100 controls the coating and developing apparatus 2 to perform the coating and developing process in the following procedure, for example. First, the control device 100 controls the transport apparatus A1 to transport the workpiece W in the carrier C to the shelf unit U10, and then controls the transport apparatus A7 to place the workpiece W into a cell for the processing module 11.

[0061] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 11. The control device 100 also controls the liquid treatment unit U1 and the heat treatment unit U2 to form an underlayer film on the surface of the workpiece W. After that, the control device 100 controls the transport device A3 to return the workpiece W with the underlayer film formed on it back to the shelf unit U10, and controls the transport device A7 to place the workpiece W into a cell for the processing module 12. Alternatively, after the underlayer film is formed, the workpiece W may be transported to the measurement unit U3 of the shelf unit U10 to evaluate the thickness of the underlayer film formed on the workpiece W.

[0062] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 12. The control device 100 also controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the underlying film of the workpiece W. After that, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10 and controls the transport device A7 to place the workpiece W into a cell for the processing module 13. After the resist film is formed, the workpiece W may be transported to the measurement unit U3 of the shelf unit U10 to evaluate the thickness of the resist film formed on the workpiece W.

[0063] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to each unit in the processing module 13. The control device 100 also controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the workpiece W. After that, the control device 100 controls the transport device A3 to transport the workpiece W to the shelf unit U11. After the upper film is formed, the workpiece W may be transported to the measurement unit U3 of the shelf unit U10 to evaluate the thickness of the upper film formed on the workpiece W.

[0064] Next, the control device 100 controls the transport device A8 to send the workpiece W from the shelf unit U11 to the exposure device 3. Subsequently, the control device 100 controls the transport device A8 to receive the exposed workpiece W from the exposure device 3 and place it in the cell for the processing module 14 in the shelf unit U11.

[0065] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U11 to each unit in the processing module 14, and controls the liquid processing unit U1 and the heat processing unit U2 to perform the resist film development process on the workpiece W. After that, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport devices A7 and A1 to return the workpiece W to the carrier C. This completes the coating and development process for one workpiece W. The control device 100 then controls the coating and development device 2 to perform the coating and development process for each of the subsequent workpieces W in the same manner as described above.

[0066] It should be noted that the specific configuration of the substrate processing apparatus is not limited to the configuration of the substrate processing system 1 exemplified above. The substrate processing apparatus can be any apparatus that includes a liquid processing unit that supplies processing liquid to the substrate and performs liquid processing, and a control device capable of controlling this unit.

[0067] (Liquid processing unit) Next, an example of the liquid processing unit U1 of the processing module 12 will be described with reference to Figure 3. The liquid processing unit U1 (liquid processing unit) supplies processing liquid to the surface Wa of the workpiece W, and then rotates the workpiece W, which has the processing liquid supplied to its surface Wa, so that a film of processing liquid is formed on the surface Wa. Figure 3 shows the state in which the processing film AF has been formed on the workpiece W. As shown in Figure 3, the liquid processing unit U1 has a rotating holding unit 30 and a processing liquid supply unit 40.

[0068] The rotating holding unit 30 holds and rotates the workpiece W. The rotating holding unit 30 includes, for example, a holding unit 32, a shaft 34, and a rotational drive unit 36. The holding unit 32 (support unit) supports the workpiece W. The holding unit 32 supports, for example, the center of the workpiece W which is placed horizontally with its surface Wa facing upward, and holds the workpiece W by vacuum suction or the like. The upper surface of the holding unit 32 (the surface that supports the workpiece W) may be formed in a circular shape when viewed from above, and may have a radius of about 1 / 6 to 1 / 2 times the radius of the workpiece W. The rotational drive unit 36 ​​is connected to the lower part of the holding unit 32 via the shaft 34.

[0069] The rotary drive unit 36 ​​is an actuator that includes a power source such as an electric motor, and rotates the holding unit 32 around the vertical axis Ax. As the holding unit 32 rotates due to the rotary drive unit 36, the workpiece W held (supported) by the holding unit 32 rotates. The holding unit 32 may hold the workpiece W such that its center substantially coincides with the axis Ax.

[0070] The processing liquid supply unit 40 supplies processing liquid to the surface Wa of the workpiece W. The processing liquid is a solution (resist) for forming a resist film. The processing liquid supply unit 40 includes, for example, a nozzle 42, a supply source 44, a pump 45, an on / off valve 46, and a nozzle drive unit 48. The nozzle 42 discharges the processing liquid onto the surface Wa of the workpiece W held by the holding unit 32. For example, the nozzle 42 is positioned above the workpiece W (vertically above the center of the workpiece W) and discharges the processing liquid downward. The supply source 44 supplies the processing liquid to the nozzle 42. A pump 45 may be provided between the supply source 44 and the nozzle 42 to adjust the amount of processing liquid supplied. The processing liquid in the flow path is pressurized by the pump 45, and the processing liquid can be discharged from the nozzle 42.

[0071] The on / off valve 46 is provided in the supply path between the nozzle 42 and the supply source 44. The on / off valve 46 switches the open / closed state of the supply path. The nozzle drive unit 48 moves the nozzle 42 between a discharge position above the workpiece W and a retracted position away from the discharge position. The discharge position is, for example, a position vertically above the rotation center of the workpiece W (a position on axis Ax). The standby position is set, for example, a position outside the periphery of the workpiece W.

[0072] (Measurement Department) Next, the measurement unit U3 will be described with reference to Figure 4. As described above, the measurement unit U3 acquires information regarding the film thickness of the film formed by the liquid treatment unit U1 and the heat treatment unit U2.

[0073] As shown in Figure 4, the measurement unit U3 functions as a measurement unit that performs measurements related to film thickness measurement. Specifically, the measurement unit U3 includes a spectroscopic measurement unit 60, a housing 70, a holding unit 71, and a linear drive unit 72. The holding unit 71 holds the workpiece W horizontally. The part of the holding unit 31 on which the workpiece W is placed may be rotatable relative to the housing 70. In this case, the axis of rotation may be the center of the workpiece W held by the holding unit 31. In this case, the workpiece W can be rotated by rotating the upper part of the holding unit 31. The linear drive unit 72 uses, for example, an electric motor as a power source to move the holding unit 71 along a horizontal, straight path.

[0074] The spectroscopic measurement unit 60 has the function of receiving light from the workpiece W, spectrally analyzing it, and acquiring a spectral spectrum. The spectroscopic measurement unit 60 includes an incident unit 61 for receiving light from the workpiece W, a waveguide unit 62 for guiding the light incident on the incident unit 61, a spectrometer 63 for spectrally analyzing the light guided by the waveguide unit 62 to acquire a spectral spectrum, and a light source 64. The incident unit 61 is configured to receive light from the center of the workpiece W when the workpiece W held in the holding unit 71 moves due to the drive of the linear drive unit 72. That is, it is provided at a position corresponding to the movement path of the center of the holding unit 71 which moves due to the drive of the linear drive unit 72. The incident unit 61 is mounted such that when the workpiece W moves due to the movement of the holding unit 71, the incident unit 61 moves relative to the surface of the workpiece W along the radial direction of the workpiece W. As a result, the spectroscopic measurement unit 60 can acquire spectral spectra at each position along the radial direction of the workpiece W, including the center of the workpiece W. The waveguide section 62 is made of, for example, an optical fiber. The spectrometer 63 spectrally analyzes the incident light and obtains a spectral spectrum containing intensity information corresponding to each wavelength. The light source 64 illuminates downwards with illumination light. As a result, the reflected light from the workpiece W passes through the incident section 61 and the waveguide section 62 before entering the spectrometer 63.

[0075] The wavelength range of the spectral spectrum acquired by the spectrometer 63 can be, for example, the visible light wavelength range (380 nm to 780 nm). Therefore, by using a light source emitting visible light as the light source 64 and spectrally analyzing the reflected light from the surface of the workpiece W with the spectrometer 63, spectral spectral data (spectral data) in the visible light wavelength range can be obtained. Note that the wavelength range of the spectral spectrum acquired by the spectrometer 63 is not limited to the visible light range, but may include, for example, infrared and ultraviolet wavelengths. Appropriate spectrometers 63 and light sources 64 can be selected according to the wavelength range of the spectral spectral data to be acquired.

[0076] In the measurement unit U3, the linear drive unit 72 moves the holding unit 71. This causes the workpiece W to pass under the incident unit 61. During this passage, reflected light from various parts of the workpiece W surface enters the incident unit 61, passes through the waveguide unit 62, and enters the spectrometer 63. The spectrometer 63 spectrally analyzes the incident light and acquires spectral data. When the film thickness formed on the surface of the workpiece W changes, for example, the spectral data changes according to the film thickness. In other words, acquiring spectral data of the workpiece W surface is equivalent to acquiring information related to the film thickness formed on the surface of the workpiece W. The measurement unit U3 can obtain information about the film thickness on the surface of the workpiece W by performing spectral measurements.

[0077] As described above, by moving the holding unit 71 with the linear drive unit 72, spectral spectra can be acquired at each position along the radial direction of the workpiece W, including the center of the workpiece W. The spectral spectra are acquired multiple times at predetermined intervals while moving the holding unit 71. Therefore, for example, spectral spectral data can be acquired at multiple points along the radial direction of the workpiece W. Here, by rotating the holding unit 71, the workpiece W can be rotated with respect to the direction in which the holding unit 71 is moved by the linear drive unit 72. With the workpiece W rotated, spectral spectra can be acquired again at each position along the radial direction of the workpiece W, including the center of the workpiece W. By repeating this operation, spectral spectra can be acquired at each position dispersed across the entire surface of the workpiece W. In other words, spectral spectra can be acquired over a wide area on the surface of the workpiece W. Alternatively, instead of rotating the holding unit 71, the operation of positioning the workpiece W in a rotated state relative to the holding unit 71 can be repeated to acquire spectral spectra at multiple points dispersed evenly on the surface of the workpiece W.

[0078] The spectral data acquired by the spectrometer 63 is sent to the control device 100. The control device 100 can estimate the film thickness on the surface of the workpiece W based on the spectral data, and the estimation result is stored as an inspection result in the control device 100. One method for estimating the film thickness on the surface of the workpiece W from spectral data is to create a model in advance to estimate the relationship between the film thickness on the surface of the workpiece W and the spectral data. In this case, the film thickness can be estimated by applying the above model to the spectral data obtained from the workpiece W whose film thickness is to be estimated. However, the method for estimating the film thickness on the surface of the workpiece W is not limited to the above.

[0079] Furthermore, in the substrate processing system 1, the conditions for forming the processed film AF may be adjusted based on the estimated film thickness. Specifically, the control device 100 of the substrate processing system 1 adjusts the processing conditions to match the estimated film thickness with the target film thickness. Details of the method for adjusting the processing conditions will be described later.

[0080] The spectroscopic measurement unit 60 may be provided independently as a measurement unit U3 as described above, but it may also be provided in the liquid treatment unit U1 or heat treatment unit U2 as described above. Alternatively, it may be provided in a separate unit, and the film thickness of the workpiece W after processing in a specific unit may be estimated by transporting the workpiece W that has been processed in any of the units.

[0081] (Control device) The control device 100 controls the coating and developing apparatus 2 partially or entirely to cause the coating and developing apparatus 2 to perform processing on the workpiece W. As shown in Figure 5, the control device 100 has, for example, a functional configuration (hereinafter referred to as "functional module") which includes a substrate processing control unit 101, a processing information storage unit 102, a film thickness calculation unit 103, an adjustment setting value acquisition unit 104 (parameter acquisition unit), a film thickness information acquisition unit 105, a parameter sensitivity calculation unit 106, a module correction value calculation unit 107 (parameter update unit), and a correction information storage unit 108. The processing performed by these functional modules corresponds to the processing performed by the control device 100. Of these, the adjustment setting value acquisition unit 104, the film thickness information acquisition unit 105, the parameter sensitivity calculation unit 106, the module correction value calculation unit 107, and the correction information storage unit 108 have the function of an inter-module adjustment unit 110 that adjusts the film thickness between modules.

[0082] The control device 100 has a function to adjust the setting values ​​for processing in each module in order to reduce the difference in film thickness distribution that occurs as a result of processing being performed in different modules when processing the workpiece W is executed in the coating and developing apparatus 2. The inter-module adjustment unit 110 described above is a functional module for reducing the difference in processing between these modules.

[0083] The modules assumed by the control device 100 correspond to units that perform specific processing on the workpiece W, such as the liquid processing unit U1 and the heat processing unit U2. Figure 5 shows, as an example, three COT1 to COT3 corresponding to three liquid processing units U1 and three PAB1 to PAB3 corresponding to three heat processing units U2 when forming a resist film as a processing film on the workpiece W. All of these are included in one coating and developing apparatus 2, and it is assumed that the workpiece W has a resist film formed on its surface by passing through one liquid processing unit U1 (COT) and two heat processing units U2 (PAB). In other words, in the example shown in Figure 5, the workpiece W passes through one of COT1 to COT3 and one of PAB1 to PAB3. However, the combination of COT and PAB is not fixed. Therefore, for example, a workpiece W processed in COT1 is not necessarily processed in PAB1.

[0084] The resist film formed on a workpiece W processed in each module is influenced by the processing characteristics of the COT or PAB that treated that workpiece W. Therefore, differences in the module that treated the film can result in differences in the film thickness distribution of the deposited resist film. Conversely, to ensure a uniform film thickness distribution regardless of which module the workpiece W passes through, one approach is to correct the parameters that affect the film thickness distribution in each module so that the processing of the workpiece W in each module does not affect the film thickness.

[0085] To achieve the above objective, the control device 100, specifically the inter-module adjustment unit 110, evaluates the extent to which the parameters used in each module (processing unit) affect the film thickness distribution. Furthermore, the control device 100 adjusts the parameters in each module so that the film thickness distribution becomes uniform.

[0086] Next, we will describe the various parts of the control device 100.

[0087] The substrate processing control unit 101 controls the liquid processing unit U1 and the heat processing unit U2 (a module that performs film formation processing) to perform predetermined processing on the workpiece W. The substrate processing control unit 101 controls each part of the liquid processing unit U1 and the heat processing unit U2 to perform liquid processing and heat processing on the workpiece W according to various conditions defined in the processing information stored in the processing information storage unit 102.

[0088] The processing information storage unit 102 stores processing information relating to liquid treatment and heat treatment of the workpiece W. The processing information includes various conditions set for performing the liquid treatment and heat treatment. For example, for liquid treatment, the setting values ​​for various conditions include the timing (time) for starting and stopping the discharge of the processing liquid, and the rotation speed (number of rotations) of the workpiece W when the processing liquid is discharged. Furthermore, the setting values ​​for various conditions also include, for example, the rotation speed of the workpiece W when forming a treatment film on the surface Wa after the processing liquid is supplied, the rotation time of the workpiece W when forming the treatment film, and the opening and closing time of the on / off valve 46.

[0089] The processing information storage unit 102 stores a "parameter sensitivity acquisition recipe" and an "adjustment recipe," which are used when correcting parameters between modules as described later. These recipes summarize the processing conditions for each unit when forming a film on the workpiece W in the coating and developing apparatus 2. The "parameter sensitivity acquisition recipe" is used in the inter-module adjustment unit 110 to calculate the parameter sensitivity, which indicates how much a specific parameter affects the film thickness, using one module first. The "adjustment recipe" is used to determine how much to adjust the parameters for each module after calculating the parameter sensitivity. The usage of these recipes will be described later.

[0090] The film thickness calculation unit 103 has the function of estimating the film thickness of the processed film based on the measurement results from the measurement unit. Specifically, when spectral data acquired by the spectroscopic measurement unit 60 is sent to the control device 100, the film thickness calculation unit 103 estimates the film thickness based on a model created in advance and held for estimating the relationship between the film thickness on the surface of the workpiece W and the spectral data. As a result, the film thickness calculation unit 103 can estimate the film thickness of the processed film based on the spectral data.

[0091] Note that the calculation method used by the film thickness calculation unit 103 is just one example and may be modified as appropriate depending on the configuration of the measurement unit.

[0092] Next, we will explain the various parts of the inter-module adjustment unit 110. First, we will explain the concept of inter-module correction with reference to Figure 6. Figure 6(a) schematically shows the film thickness distribution of processed films AF deposited through different modules. Here, as an example, we show the relationship between the film thickness distributions FD1 to FD3 of processed films AF of workpieces W processed by three different modules and the target film thickness FD0. In this case, the trends of the film thickness distributions FD1 to FD3 are different. Therefore, if we simply correct the control parameters of each module by uniformly varying the film thickness at each position (in the vertical direction) so that the average value of the film thickness of each workpiece W becomes the target value FD0, the film thickness distribution will continue to be different from one another. In other words, since the film thickness distribution (profile) of the processed films AF deposited in each module does not have the same trend, even if the difference in the average value of the film thickness becomes small, the film thickness distribution will be significantly different for each workpiece W.

[0093] Therefore, the inter-module adjustment unit 110 first suppresses the difference in film thickness distribution originating from the modules, as shown in Figure 6(b). That is, it adjusts the control parameters so that the film thickness distributions FD1 to FD3 show the same trend. In that state, it further adjusts the control parameters so that the average value of the film thickness becomes the target value P0. By adopting this method, as shown in Figure 6(c), the film thickness is adjusted so that the film thickness distributions FD1 to FD3 become uniform and their average value also remains constant. In this way, the inter-module adjustment unit 110 suppresses variations in film thickness distribution between modules by identifying the relationship between the film thickness distribution and the control parameters and then adjusting each control parameter.

[0094] The adjustment setting value acquisition unit 104 acquires the conditions for forming the processed film AF on the workpiece W, as instructed by the user or the like. The conditions for film formation are the same type of information as the information held in the processing information storage unit 102. Specifically, for example, regarding liquid processing, the timing (time) for starting and stopping the discharge of the processing liquid, the rotation speed (number of rotations) of the workpiece W when discharging the processing liquid, etc., are predetermined. Furthermore, for example, the rotation speed of the workpiece W when forming the processed film on the surface Wa after supplying the processing liquid, the rotation time of the workpiece W when forming the processed film, the opening and closing time of the valve 46, etc., are also predetermined. This information is, for example, information specified by the user or the like, and is the condition for performing processing on the workpiece W in the liquid processing unit U1 and the heat processing unit U2 when it is assumed that a processed film AF of a predetermined thickness is to be formed on the surface of the workpiece W.

[0095] The film thickness information acquisition unit 105 has the function of acquiring film thickness information for a workpiece W that has been coated using the module that is the target of the inter-module correction operation. The film thickness information acquisition unit 105 acquires the film thickness calculation result when substrate processing is performed on the workpiece W according to the "parameter sensitivity acquisition recipe" and the "adjustment recipe". The acquired film thickness calculation result is used in the parameter sensitivity calculation unit 106 and the module correction value calculation unit 107 described later.

[0096] The parameter sensitivity calculation unit 106 calculates the parameter sensitivity, which shows the relationship between each control parameter and the film thickness distribution in the module that performs substrate processing, from the film thickness calculation results obtained as a result of performing substrate processing on the workpiece W based on the parameter sensitivity acquisition recipe.

[0097] Parameter sensitivity, as described above, is information that shows the relationship between each control parameter and the film thickness in the module that performs substrate processing. When operating a single module, there are many control parameters that can affect the film thickness, but if it is not understood which control parameters affect the film thickness distribution and to what extent, it is difficult to control the film thickness distribution to a predetermined state by changing the control parameters. Therefore, by acquiring the parameter sensitivity described above in advance, it is possible to identify how much each control parameter included in the processing unit affects the control of the film thickness distribution.

[0098] To understand the relationship between control parameters and film thickness distribution, experimental data is needed to determine how the film thickness changes when the control parameters, which are the conditions for liquid processing, are varied within a specified range in one module of the liquid processing unit U1. Therefore, the first step is to identify the experimental conditions necessary to calculate the sensitivity for each control parameter. Specifically, an experimental conditions table may be prepared by selecting appropriate experimental conditions using known experimental design methods. Based on the type of control parameter, numerical range, etc., a parameter sensitivity acquisition recipe is created that includes multiple processing conditions with different condition settings.

[0099] Next, based on the prepared experimental conditions table, the film thickness of the treated film AF is measured (estimated) after processing the workpiece W under multiple processing conditions. The method for calculating (estimating) the film thickness at this time can be the same as the estimation method described above, based on the measurement results of the spectral distribution. As a result, information regarding the film thickness distribution of the treated film AF is obtained. From the experimental plan table obtained in this way and the measurement results of the film thickness distribution (experimental results), it is possible to identify the extent to which each parameter contributes to the film thickness distribution of the treated film.

[0100] From the measurement results of the film thickness distribution, a feature quantity indicating the film thickness distribution can be obtained. As an example, an approximation using a Zernike polynomial can be performed as a feature quantity indicating the film thickness distribution, and the coefficients related to each component can be used as the feature quantity.

[0101] The Zernike polynomial is a complex function on a unit circle with a radius of 1 (practically used as a real function) and has polar coordinate arguments (r, θ). The Zernike polynomial is mainly used in the optical field to analyze the aberration components of a lens. By decomposing the wavefront aberration using the Zernike polynomial, it is possible to know the aberration components based on each independent wavefront, for example, shapes such as mountain-shaped and saddle-shaped.

[0102] In this embodiment, the in-plane distribution of the film thickness within the surface of the workpiece W is regarded as a wavefront that undulates up and down. In this state, using the Zernike polynomial, the film thickness distribution Z within the surface of the workpiece W can be decomposed into a plurality of types of in-plane tendency components Z including a bending component that curves convexly or concavely. i The magnitude of each in-plane tendency component Z i can be represented by the Zernike coefficient.

[0103] Each in-plane tendency component Z i The Zernike coefficient representing it can be specifically expressed by the following formula using the polar coordinate arguments (r, θ). Z1(1) Z2(r·cosθ) Z3(r·sinθ) Z4(2r 2 -1) Z5(r 2 ·cos2θ) Z6(r 2 ·sin2θ) Z7((3r 3 -2r)·cosθ) Z8((3r 3 -2r)·sinθ) Z9(6r 4 -6r 2 +1) … Z16(20r6 -30r 4 +12r 2 +1) ...

[0104] Among these Zernike coefficients, for example, the coefficients Z1, Z4, and Z9 related to the concentric curvature component are used to represent the film thickness distribution on the surface of the workpiece W. That is, the variation in film thickness is approximated as a Zernike polynomial using the coefficients Z1, Z4, and Z9. In this case, the weighting coefficients for the coefficients Z1, Z4, and Z9 can serve as feature quantities.

[0105] The relationship between the feature quantities obtained from the measurement results of the film thickness distribution approximated as a Zernike polynomial and the control parameters in the processing unit is calculated from the above information. That is, for each control parameter, it is determined how much the weighting coefficients included in the Zernike polynomial change when this control parameter is varied by a specific amount, and as a result, how much the film thickness distribution changes. This result can be used as the parameter sensitivity. Known methods can be used to calculate the correspondence between the Zernike polynomial and the control parameters. For example, a calculation is performed by combining a result matrix obtained from the film thickness estimation results obtained from multiple experimental results based on the experimental table and a condition matrix created based on the experimental condition table. According to this calculation, a matrix is ​​obtained that identifies how much each control parameter contributes to each of the Zernike coefficients. From this matrix, the relationship between each control parameter and the film thickness distribution can be obtained.

[0106] Furthermore, the relationship between each control parameter and the film thickness distribution changes depending on the processing conditions for the workpiece W. Therefore, it may be necessary to prepare a new set of parameters each time the conditions such as the type of workpiece W, the type of processing film AF applied to the workpiece W, and the target film thickness of the processing film AF change.

[0107] The above explanation described an example of calculating features using approximation with Zernike polynomials, but approximation can also be performed using mathematical formulas other than Zernike polynomials.

[0108] The module correction value calculation unit 107 has the function of correcting the control parameters in each module so that even when processing is performed with different modules, the film thickness and film thickness distribution are similar, by utilizing the relationship between the control parameters and film thickness distribution calculated by the parameter sensitivity calculation unit 106. The relationship between each control parameter and the film thickness distribution in each module (processing unit) is understood through the above processing by the parameter sensitivity calculation unit 106. By obtaining the film thickness distribution of the workpiece W processed by the module to be corrected, it is possible to understand how much the film thickness distribution of the processed film AF obtained in the workpiece W obtained in the module to be corrected differs from the film thickness distribution of the processed film AF of the workpiece W created in other modules. Furthermore, based on the understood difference, the amount of correction for the control parameters to equalize the film thickness distribution can be calculated. Specifically, the film thickness distribution of all workpieces W after processing in modules of the same type to be corrected is obtained, and assuming that these converge to a specific film thickness distribution, the difference between the film thickness distribution in each module and the specific film thickness distribution is identified. Then, the amount of adjustment for the control parameters to eliminate this difference is identified. This point will be described later.

[0109] The correction information storage unit 108 has the function of storing the correction values ​​of the control parameters in each module calculated by the module correction value calculation unit 107. The stored correction values ​​of the control parameters are used when the substrate processing control unit 101 instructs each module to perform processing related to film formation.

[0110] The control device 100 described above is composed of one or more control computers. For example, the control device 100 has the circuit 120 shown in Figure 7. The circuit 120 has one or more processors 121, a memory 122, a storage 123, and an input / output port 124. The storage 123 has a storage medium that can be read by the computer, such as a hard disk. The storage medium stores a program that causes the control device 100 to execute the substrate processing method and film thickness estimation method described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk.

[0111] Memory 122 temporarily stores the program loaded from the storage medium of storage 123 and the calculation results by processor 121. Processor 121 works in cooperation with memory 122 to execute the above program, thereby configuring each of the functional modules described above. Input / output ports 124 input and output electrical signals to and from each part of the coating and developing apparatus 2 according to commands from processor 121.

[0112] If the control device 100 is composed of multiple control computers, each functional module may be implemented by an individual control computer. The control device 100 may consist of a control computer that includes a functional module for executing liquid processing by the liquid processing unit U1 and the heat processing unit U2, a control computer that includes a functional module for estimating the thickness of the processed film AF (film thickness calculation unit 103), and a control computer that includes a functional module for correcting control parameters (inter-module adjustment unit 110). Alternatively, each of these functional modules may be implemented by a combination of two or more control computers. In these cases, the multiple control computers may be connected to each other in a manner that allows them to communicate with one another, and may work together to execute the substrate processing method and film thickness estimation method described later. Note that the hardware configuration of the control device 100 is not necessarily limited to configuring each functional module by program. For example, each functional module of the control device 100 may be composed of a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such circuits.

[0113] [Control method for substrate processing equipment] Next, as an example of a substrate processing method, we will explain the operations related to substrate processing performed by the control device 100 and an example of the process related to estimating the thickness of the processed film AF by correcting the control parameters (control parameter setting method). In the control device 100, as described above, the parameter sensitivity is calculated using one module, and then this parameter sensitivity is used to correct the control parameters of other modules.

[0114] The process described in this embodiment can also be applied to correcting control parameters in two types of units that perform different processes on a single workpiece W, such as the liquid treatment unit U1 and the heat treatment unit U2. However, for simplicity, the following description will primarily focus on correcting control parameters in one type of module, and will also describe the application to two types of modules as needed.

[0115] Figure 8 is a flowchart showing an example of the process described above that is performed by the control device 100. First, the control device 100 performs step S01. In step S01, for example, the adjustment setting value acquisition unit 104 acquires the adjustment setting value related to the processing of the workpiece W. The adjustment setting value is specified, for example, by the user of the coating and developing device 2. The adjustment setting value also includes the setting value for each control parameter, and this setting value becomes the initial value before correction.

[0116] Next, the control device 100 executes step S02. In step S02, for example, the substrate processing control unit 101 controls the processing module to perform substrate processing on the workpiece W based on the "parameter sensitivity acquisition recipe". The module used at this time is predetermined (here it is referred to as the first module), and the processing related to the formation of the processed film is performed repeatedly with one module while changing the settings of the control parameters. Then, the film thickness distribution of the formed processed film is measured. The film thickness calculation unit 103 calculates the film thickness based on the measurement results from the measurement unit (spectroscopic measurement unit 60), and the film thickness information acquisition unit 105 acquires the result. Furthermore, the parameter sensitivity calculation unit 106 calculates the parameter sensitivity related to the relationship between the control parameters and the film thickness distribution based on the film thickness distribution.

[0117] Next, the control device 100 executes step S03. In step S03, for example, the substrate processing control unit 101 controls the processing modules to perform substrate processing on the workpiece W based on the "adjustment recipe". At this time, all modules subject to correction of control parameters perform processing related to the formation of the processing film with the adjustment set value, i.e., the initial value of the control parameters. Then, the film thickness distribution of the formed processing film is measured. The film thickness calculation unit 103 calculates the film thickness distribution based on the measurement results from the spectroscopic measurement unit 60, and the film thickness information acquisition unit 105 acquires the result.

[0118] Furthermore, when correcting the control parameters for one type of module, processing the substrate while changing the module while keeping other conditions the same will yield data in which the differences in characteristics between modules are reflected in the film thickness distribution. Similarly, when correcting the control parameters for two types of modules that perform different processing on a single workpiece W, for example, the first unit can be kept fixed while processing the substrate while changing the second module. This process will yield data in which the differences in characteristics between the modules are reflected in the film thickness distribution for the second module. Also, by keeping the second unit fixed while processing the substrate while changing the first module, data in which the differences in characteristics between modules are reflected in the film thickness distribution for the first module can be obtained. Thus, the recipe configuration can be changed by configuring the module for which the control parameters are corrected.

[0119] Next, the control device 100 executes step S04. In step S04, for example, the module correction value calculation unit 107 uses the film thickness distribution obtained in step S03, the initial values ​​of the control parameters, and the parameter sensitivity obtained in advance to calculate a correction value (optimal value of the control parameter) to reduce the difference in film thickness of the processed film formed in each module. The calculated correction value may be stored in the correction information storage unit 108.

[0120] For calculating parameter correction values, for example, a method can be used where correction values ​​for correcting bias in film thickness distribution are treated as a quantification problem of type I, and the solution is obtained by solving this problem. This method will be explained with reference to Figure 9.

[0121] Figure 9(a) assumes that the liquid processing unit U1 (COT) has 8 modules. Specifically, there are 4 modules COT11-1 to COT11-4 and 4 modules COT12-1 to COT12-4. Here, these 8 modules are influenced by 2 parameters. That is, COT11-1 to COT11-4 and COT12-1 to COT12-4 are located in different layers (locations within the device), resulting in differences in their operating recipes. Furthermore, the 8 modules are supplied with processing liquid by 4 pumps. Specifically, COT11-1 and COT11-2 are operated by pumps 11-12, COT11-3 and COT11-4 are operated by pumps 13-14, COT12-1 and COT12-2 are operated by pumps 12-12, and COT12-3 and COT12-4 are operated by pumps 12-34. In this case, for example, COT11-1 and COT11-2 will be controlled by the same control parameters, but they will be controlled by different pumps than COT11-3 and COT11-4. Therefore, for example, to achieve a uniform film thickness distribution in COT11-1 to COT11-4, it is possible to adjust the parameters related to the operation of the pump. Furthermore, to achieve a uniform film thickness distribution between the COT11 group and the COT12 group, adjustments will be necessary between the operation recipes for COT11 and COT12.

[0122] Figure 9(b) describes this situation as a quantification problem of type I. Here, the film thickness distribution FT in each module can be described as the sum of the overall average of all modules + the variation component originating from each module [COT11-1~COT12-4] and the error. The overall average can be defined as the average of the coefficients Z1, Z4, Z9, etc., when the film thickness distribution in each module is approximated by the Zernike polynomial.

[0123] Furthermore, the components derived from each module [COT11-1~COT12-4] consist of layer-derived variable components [11th layer component, 12th component] and variable components derived from the related pump [Pump 111 Ingredients, Pump 113 Ingredients, Pump 121 Ingredients, Pump 131It can be decomposed as the sum of the components. Furthermore, as a setting for a quantification type I problem, the sum of the fluctuating components [COT11-1~COT12-4] originating from each module is assumed to be zero. That is, the sum with the 11th or 12th layer component after decomposition becomes zero, and furthermore, Pump 111 Ingredients and Pump 113 The sum of the components becomes zero, Pump 121 Ingredients and Pump 123 Assume that the sum of the components is zero. Here, we assume that each component of the Zernike polynomial satisfies the above relationship.

[0124] Each component [11th layer component, 12th component] and [Pump] satisfy all of the above relationships. 111 Ingredients, Pump 113 Ingredients, Pump 121 Ingredients, or Pump 131 By calculating the [components] for each component, it is possible to determine the contribution amount, which indicates how much each component influences the film thickness distribution in each module. Furthermore, by determining the contribution amount of each component, correction values ​​can also be calculated, for example, by calculating the inverse matrix.

[0125] Thus, the calculation of parameter correction values ​​can be obtained by setting the correction values ​​for correcting the bias in the film thickness distribution as a quantification problem of type I and solving it. In other words, by setting the calculation of correction values ​​related to film thickness distribution as a quantification problem of type I, a solution can be obtained using known methods.

[0126] Returning to Figure 8, the control device 100 executes step S05. In step S05, for example, the substrate processing control unit 101 controls the processing modules, and each module performs processing using the control parameters modified with the correction values. The thickness of the resulting processed film AF is then measured by the spectroscopic measurement unit 60, and the film thickness value (film thickness distribution) is obtained. The method for obtaining the film thickness distribution is the same as before.

[0127] Next, the control device 100 executes step S06. In step S06, the module correction value calculation unit 107 refers to the film thickness distribution obtained in step S05 and checks whether the film thickness distribution falls within the target range. Here, the determination may be made from the perspective of whether the variation in film thickness distribution between modules is within a predetermined range, or from the perspective of whether the dispersion of film thickness distribution in a particular module is within a predetermined range. If predetermined, the determination may also be made using the dispersion of the difference from the target in-plane tendency profile for the film thickness of the processed film AF in the workpiece W to determine whether it is close to the target profile. If the result of this determination is that the film thickness distribution falls within the target range (S06-YES), the process is terminated. On the other hand, if the film thickness distribution does not fall within the target range (S06-NO), the correction value is calculated again using the film thickness distribution obtained in step S05 and the control parameters used when this film thickness distribution was acquired (step S07), and steps S05, S06 (and step S07 if necessary) are repeated until the film thickness distribution falls within the target range.

[0128] Next, with reference to Figures 10 and 11, the exchange of instructions and other information between the user, the control device 100, and the coating and developing device 2 (particularly the processing module and measurement unit) will be explained. Figures 10 and 11 show the information exchanged between the user and the device in order to execute each step of the flowchart shown in Figure 8.

[0129] Figure 10 is a flowchart showing the processing steps corresponding to steps S01 and S02 in Figure 8.

[0130] First, the user instructs the control device 100 to acquire parameter sensitivity (step S11). In response, the control device 100 obtains the adjustment setting value by querying the user (step S12) (step S13). Based on this adjustment setting value, the control device 100 selects a parameter sensitivity acquisition recipe corresponding to the adjustment setting value from among the recipes stored in the processing information storage unit 102 (step S14).

[0131] Based on the parameter sensitivity acquisition recipe, the required number of workpieces is determined, so the control device 100 instructs the user to prepare the workpieces (step S15), and the user, after preparing the workpieces, instructs the control device 100 to start the measurement (step S16). Based on the user's instructions, the control device 100 instructs and controls the substrate processing based on the parameter sensitivity acquisition recipe and the measurement of the film thickness distribution of the workpiece W after substrate processing (step S17). Based on this, the coating and developing apparatus 2 performs substrate processing on the workpiece W in the specified module, and further measures the film thickness after processing using the measurement unit (spectroscopic measurement unit 60 of measurement unit U3) (step S18). The measurement results are sent from the spectroscopic measurement unit 60 of the coating and developing apparatus 2 to the control device 100 (step S19), and the control device 100 calculates the film thickness distribution from the measurement results, and further calculates the sensitivity of the control parameters (parameter sensitivity) from this film thickness distribution (step S20). Once the series of processes is complete, the control device 100 sends a completion report to the user notifying them of the completion of the process (step S21), allowing the user to understand that the process for acquiring parameter sensitivity has been completed. Alternatively, the system may be configured to notify the user of the calculated parameter sensitivity information at the same time as sending the completion report.

[0132] Figure 11 is a diagram illustrating the processing steps corresponding to steps S03 to S07 in Figure 8.

[0133] First, the user instructs the control device 100 to perform inter-module adjustment (step S31). In response, the control device 100 prepares an adjustment recipe for performing inter-module adjustment from among the recipes stored in the processing information storage unit 102 (step S32). It also sets initial values ​​for the adjustment settings when performing processing according to the adjustment recipe (step S33). For this, the information obtained in the parameter sensitivity acquisition process shown in Figure 10 (step S13) may be used.

[0134] Next, the control device 100 instructs and controls the substrate processing based on the adjustment recipe and the measurement of the film thickness distribution of the workpiece W after substrate processing (step S34). Based on this, the coating and developing apparatus 2 performs substrate processing on the workpiece W in each module and further measures the film thickness after processing using the spectroscopic measurement unit 60 (step S35). The measurement results are sent from the spectroscopic measurement unit 60 of the coating and developing apparatus 2 to the control device 100 (step S36), and the control device 100 calculates the film thickness distribution from the measurement results. Here, it is determined whether the calculated film thickness distribution is within the target range (step S37), and if it is not within the target range (S37-NO), the parameters are optimized (step S38), and the process is repeated again from substrate processing in the coating and developing apparatus 2 (S34). On the other hand, if the calculated film thickness distribution is within the target range (S37-YES), the control device 100 sends a completion report to the user notifying them of the completion of the process (step S39), and the user can understand that the process for acquiring parameter sensitivity is complete. Furthermore, the system may be configured to notify users of information regarding the parameter correction values ​​calculated at the same time as sending the completion report.

[0135] [Differentiation] In the above embodiment, a case was described in which adjustments are made between modules so that the difference in film thickness distribution is reduced. Now, a modified example that can be performed by the coating and developing apparatus 2, which includes the control device 100, in addition to the above series of processes will be described.

[0136] (Calculation of offset amount) As described above, measurement by the measurement unit is essential when calculating the film thickness. However, if the film thickness estimation result from the spectroscopic measurement unit 60 of the measurement unit U3, which functions as the measurement unit, does not correspond to the actual film thickness of the workpiece W, the correction of control parameters using the estimation result may also be inaccurate. Therefore, when estimating the film thickness using measurement by the measurement unit, it is necessary to perform offset adjustment in advance.

[0137] Therefore, before performing the control parameter correction using parameter sensitivity as described above, it is also possible to perform offset adjustment on the measurement result itself obtained by the spectroscopic measurement unit 60 of the measurement unit U3.

[0138] Figure 12 shows an example of the procedure for performing offset adjustment. The basic flow is similar to the examples shown in Figures 10 and 11.

[0139] First, as a preliminary step, the control device 100 prepares a workpiece W whose film thickness is known, that is, for which acceptance data has been obtained (step S51). The film thickness of this workpiece W can be measured, for example, using another film thickness measuring device.

[0140] The user instructs the control device 100 to acquire the offset of the measurement unit (step S52). In response, the control device 100 prepares a recipe corresponding to the offset adjustment from the recipes stored in the processing information storage unit 102 (step S53). This recipe controls the coating and developing apparatus 2 to measure the film thickness of a workpiece W with a known film thickness using the spectroscopic measurement unit 60 of the measurement unit U3.

[0141] Once the recipe is prepared, the control device 100 instructs and controls the measurement unit U3 to transport the workpiece W, whose film thickness is known, to measure the film thickness distribution of this workpiece W (step S54). Based on this, the coating and developing apparatus 2 measures the film thickness of the workpiece W in the designated spectroscopic measurement unit 60 (step S55). The measurement results are sent from the spectroscopic measurement unit 60 of the coating and developing apparatus 2 to the control device 100 (step S56), and the control device 100 calculates the film thickness distribution from the measurement results. By comparing the calculated film thickness distribution with the acceptance data, the offset amount in the spectroscopic measurement unit 60 can be calculated (step S57). By storing this offset amount in the processing information storage unit 102 of the control device 100 (step S58), the estimated film thickness can be calculated with greater accuracy by performing a correction using the offset amount during subsequent measurements by the spectroscopic measurement unit 60. When the series of processes is completed, the control device 100 sends a completion report to the user notifying them of the completion of the process (step S59).

[0142] Thus, by configuring the control device 100 to calculate the offset amount before correcting the control parameters, the offset amount calculation process, which is performed when starting up the coating and developing apparatus 2, can be made simpler.

[0143] (Parameter management using correction groups) Next, we will describe a method for using the correction values ​​of control parameters in other manufacturing procedures (recipes). In the above embodiment, we described a method for calculating the correction values ​​of control parameters between modules when forming a processed film AF with specific adjustment settings. Here, if there is a procedure for manufacturing another product using the same adjustment settings, it is thought that variations in film thickness distribution can be suppressed in the product manufacturing procedure as well by applying the correction values ​​of the control parameters calculated by the above method. Therefore, we will describe a method for sharing the correction values ​​of control parameters between recipes.

[0144] Figure 13(a) illustrates the situation when parameter values ​​reflecting correction values ​​are shared. Here, it is assumed that the optimal parameter values ​​for minimizing the variation in film thickness distribution between modules when manufacturing "film 1" are determined to be "para1" and "para2" using the method described above. Similarly, it is assumed that the optimal parameter values ​​for minimizing the variation in film thickness distribution between modules when manufacturing "film 2" are determined to be "para3" and "para4" using the method described above. On the other hand, suppose that the manufacturing procedure for a certain product specifies a procedure for forming film 2 after forming film 1. In this case, the parameters for minimizing the variation in film thickness distribution between modules have already been determined for both film 1 and film 2. Therefore, it is presumed that by using these parameters "para1~4", it is possible to form films while minimizing the variation in film thickness distribution between modules for both film 1 and film 2. Thus, it can be said that the optimal parameter values ​​for forming film 1 under certain conditions can also be used as the optimal parameter values ​​for other processing procedures that form film 1 under the same conditions.

[0145] Therefore, as shown in Figure 13(b), the procedures for forming films under specific conditions (e.g., film 1, film 2, etc.) are treated as the same "group," and the predetermined optimal parameter values ​​for forming film 1 are applied to the procedures belonging to the same group. This configuration prevents the need to recalculate the correction values ​​(optimal values) of the control parameters each time the product manufacturing procedure changes.

[0146] One possible method for determining which group a particular product's manufacturing procedure belongs to and associating it with other processes is tagging. For example, the "product manufacturing procedure" shown in Figure 13(b) is tagged with "Membrane 1" and "Membrane 2," thereby identifying that the "product manufacturing procedure" uses "Membrane 1" and "Membrane 2." Furthermore, with these tags, the control device 100 can be configured to automatically recognize the optimal values ​​of the control parameters related to "Membrane 1" and "Membrane 2" when executing the product manufacturing procedure. In this way, by configuring the system to associate a product's manufacturing procedure with separately calculated optimal values ​​(corrected values) of control parameters, the calculated optimal values ​​(corrected values) of control parameters can be effectively utilized.

[0147] (Transfer of information between coating and developing devices) In the above embodiment, a method for reducing the difference in film thickness distribution between modules in a single coating and developing apparatus 2 was described. However, among the various types of information used in the procedure described above, it is considered possible to share information related to parameter sensitivity with other coating and developing apparatuses 2.

[0148] To minimize differences in film thickness distribution between modules, corrections that take into account the characteristics of each module are necessary. Therefore, it is required to actually perform substrate processing and film thickness measurement using adjustment recipes for each module. On the other hand, for identical modules performing the same processing (e.g., coating the same processing film), the sensitivity of various parameters related to the operation of that module can be considered to be the same regardless of the device or module. Therefore, information on adjustment settings and the parameter sensitivity of the processing module at those adjustment settings may be shared between the coating and developing apparatus 2.

[0149] Various types of information can be used to exchange data between coating and developing devices 2. Figure 14 shows an example of a configuration in which information is sent and received via a server SV. That is, information related to parameter sensitivity acquired by one coating and developing device 2 and the adjustment setting value used when measuring that parameter sensitivity are sent to the server SV and stored in the server SV. At this time, another coating and developing device 2 can retrieve the corresponding parameter sensitivity information by searching the server SV based on the adjustment setting value, for example, and can use it. The server SV may be located in a place that is constantly connected to multiple coating and developing devices 2, or it may be located in a place to which many coating and developing devices 2 can connect, such as a cloud. In this way, by sharing information related to parameter sensitivity between coating and developing devices 2, it becomes possible to calculate correction values ​​to reduce the difference in film thickness distribution between modules while omitting the measurement of parameter sensitivity.

[0150] (Adjustment of valve closing timing and discharge volume in the liquid processing unit) Next, we will explain the case where the closing timing of the on / off valve 46 in the processing liquid supply unit 40 is used as one of the control parameters in the liquid processing unit U1. It has been confirmed that the film thickness distribution on the surface of the workpiece W changes by adjusting the closing timing of the on / off valve 46. Therefore, the closing timing of the on / off valve 46 may be used as one of the control parameters in the liquid processing unit U1 described above. The closing timing is the timing at which the on / off valve 46 is switched from the state in which the processing liquid from the processing liquid supply unit 40 is being supplied to the workpiece W to the closed state. By switching the on / off valve 46 to the closed state, the supply of processing liquid from the nozzle 42 is stopped. By adjusting this closing timing together with other control parameters of the liquid processing unit U1, it is possible to adjust the film thickness distribution on the surface of the workpiece W.

[0151] On the other hand, if the closing timing of the on / off valve 46 is adopted as a control parameter, changing the closing timing means that the amount of processing liquid supplied to the workpiece W may change. This may affect the overall film thickness of the processing film AF on the workpiece W. Therefore, when changing the closing timing under the condition that the amount of processing liquid supplied does not change, it is necessary to adjust the amount of processing liquid supplied from the processing liquid supply unit 40 so that a predetermined amount of processing liquid is supplied to the workpiece W when the on / off valve 46 is closed at the changed closing timing. Specifically, it is necessary to adjust the discharge amount of processing liquid by adjusting the amount of pressurization by the pump 45, thereby adjusting the discharge pressure of the processing liquid discharged from the nozzle 42. Furthermore, when obtaining parameter sensitivity, it is necessary to calculate the parameter sensitivity after adjusting the discharge amount of processing liquid, which may change depending on the closing timing.

[0152] The following describes a modified example in which the discharge amount of the processing liquid from the processing liquid supply unit 40 is adjusted in response to a change in the closing timing of the on / off valve 46. Note that the processing related to this discharge amount adjustment may be performed in the module correction value calculation unit 107 of the control device 100. Specifically, when the module correction value calculation unit 107 calculates the correction value for the closing timing of the on / off valve 46, the discharge pressure of the processing liquid from the processing liquid supply unit 40 (i.e., the pressurization amount of the pump 45) may be defined so that the discharge amount is not changed in response.

[0153] Figure 15 shows the specific procedure for adjusting the discharge amount of this processing liquid. First, the control device 100 executes step S71. In step S71, the control device 100 obtains the relationship between the closing timing of the on / off valve 46 and the discharge amount of processing liquid from the processing liquid supply unit 40. At the stage when the adjustment setting value is obtained from the user, the pressurization amount of the pump 45 in the processing liquid supply unit 40 is predetermined. Therefore, in step S71, as shown in Figure 16(a), information regarding the relationship between the closing timing and the processing liquid discharge amount is obtained. In this case, it is assumed that the closing timing and the processing liquid discharge amount are proportional, so the closing timing X0 to achieve the target value L of the processing liquid supply amount to the workpiece W can be determined.

[0154] Next, the control device 100 executes step S72. In step S72, the control device 100 calculates the optimal value for the close timing. As shown in the embodiment described above, the calculation of the optimal value is performed by first calculating the parameter sensitivity and then calculating the correction value for the control parameter for each module. By using the close timing as one of the control parameters, a correction value for the close timing in a specific module is calculated, and the optimal value is obtained by reflecting this correction value.

[0155] Next, the control device 100 executes step S73. In step S73, the control device 100 changes the amount of pressurization by the pump 45 so that when the processing liquid supply unit 40 is operated with the closing timing set to the optimal value, the amount of processing liquid supplied becomes the set amount. Initially, the amount of pressurization by the pump 45 was set so that a predetermined amount of processing liquid was supplied to the workpiece W without correcting the closing timing. However, by adjusting the closing timing, the supply time of the processing liquid to the workpiece W is changed, so it is necessary to adjust the amount of processing liquid supplied per unit time by adjusting the amount of pressurization.

[0156] Specifically, as shown in Figure 16(a), let's assume that the optimal closing timing X1 has shifted by Δx from the initial closing timing X0. In this case, the discharge volume of the processing liquid increases by the amount that the discharge time of the processing liquid has increased, and in reality, it increases by ΔL. This relationship can be explained using the relationship between the discharge pressure and discharge volume of the processing liquid shown in Figure 16(b). When the closing timing is set to X0, the discharge pressure and the discharge volume of the processing liquid are related to the calibration curve C. X0 The relationship shown is obtained. In this case, if the discharge pressure is set to the initial value D0, the processing liquid corresponding to the target value L is supplied to the workpiece W.

[0157] On the other hand, if the closing timing is set to X1, the amount of processed liquid supplied will increase by ΔL, so the calibration curve showing the discharge pressure and the amount of processed liquid discharged will be calibration curve C. X0 Therefore, a calibration curve C passes through point C0, which shows the discharge pressure D0 and the increased processing liquid supply rate. X1 This can be changed to this calibration curve C. X1 Once identified, this calibration curve C X1 The above allows us to determine the discharge pressure D1 required to supply the processing solution corresponding to the target value L. Therefore, in order to determine the discharge pressure D1 required to supply the processing solution corresponding to the target value L, this calibration curve C X0 From the relationship between and point C0, the calibration curve C X1 It is necessary to identify this. Therefore, below we will discuss calibration curve C. X1 Here are four ways to configure it.

[0158] First, as the first method, calibration curve C X0 One method is to simply shift it in parallel. Figure 16(b) shows an example of this parallel shift. Calibration curve C X1 Calibration curve C X0 It has the same slope, but is shifted parallel to pass through point C0. This is the calibration curve C X1 After setting this, calibration curve C X1 From the intersection of this value and the target value L, the discharge pressure D1 corresponding to the optimal closing timing can be determined.

[0159] The second to fourth methods all assume that the slope of the calibration curve changes as the closing timing changes. First, as the second method, calibration curve C X0 One method is to adjust the slope based on the assumption that the conditions and the discharge pressure at which the discharge volume becomes 0 are the same. Figure 17(a) shows an example of this. Calibration curve C X1 Calibration curve C X0 The calibration curve C is set to pass through the point where the discharge volume becomes 0 and the point C0 when the closing timing is changed as described above. X1 After setting this, calibration curve C X1 From the intersection of the line and the target value L, the discharge pressure D1 corresponding to the optimal closing timing is determined.

[0160] The third method involves adjusting the slope of the calibration curve by utilizing the discharge rate ratio, since the discharge rate changes when the closing timing is altered. Figure 17(b) shows an example of this. Calibration curve C X1 Calibration curve C X0 This method involves multiplying the slope of the curve C by (discharge rate after closing timing change / discharge rate before closing timing change). Since (discharge rate after closing timing change / discharge rate before closing timing change) can be obtained from (L+ΔL) / L, S × (L+ΔL) / L becomes the calibration curve C. X1 This results in the slope of calibration curve C. X1 After setting this, calibration curve C X1 From the intersection of the line and the target value L, the discharge pressure D1 corresponding to the optimal closing timing is determined.

[0161] The fourth method involves adjusting the slope of the calibration curve by changing the discharge time, which is altered by changing the closing timing. Figure 17(c) shows an example of this. Calibration curve C X1 Calibration curve C X0This method involves multiplying the slope of the curve by (discharge time after closing timing change / discharge time before closing timing change), where S is the slope of the curve. If T0 is the discharge time of the processed liquid when the closing timing is the initial value X0, then (discharge time after closing timing change / discharge time before closing timing change) can be calculated as (T0 + (X1 - X0)) / T0. Therefore, S × (T0 + (X1 - X0)) / T0 is the calibration curve C. X1 This results in the slope of calibration curve C. X1 After setting this, calibration curve C X1 From the intersection of the line and the target value L, the discharge pressure D1 corresponding to the optimal closing timing is determined.

[0162] Thus, calibration curve C is used to calculate the discharge pressure D1 corresponding to the optimal closing timing. X1 The setting method can be changed in various ways. The choice of which method to adopt may be determined by considering, for example, the characteristics of the processing liquid supply unit 40. Regardless of which method is adopted, the accuracy of the calibration curve adjustment is sufficiently high, so the discharge rate of the processing liquid can be adjusted accurately regardless of which method is used. However, the fourth method among the four methods described above allows the calibration curve to be determined while reducing the influence of variations in the actual discharge rate of the processing liquid, making it possible to correct the discharge rate of the processing liquid with greater accuracy and precision.

[0163] Furthermore, in the method of adjusting the discharge amount of processing liquid from the processing liquid supply unit 40 described above, calibration curve C X0 It was assumed that the calibration curve C would be prepared in advance, but it is not limited to this. X0 It is also possible to adopt adjustment methods that do not involve using [this method].

[0164] For example, the control device 100 stores the minimum discharge pressure at which the experimentally determined discharge volume of the processed liquid is 0 or greater, and also acquires one combination of discharge pressure and discharge volume when the processed liquid supply unit 40 is actually operated. Using the values ​​of these two combinations, a calibration curve C is obtained. X0 A characteristic straight line approximating the calibration curve C can be obtained. X0It can be used as a substitute. Furthermore, when using a common pump across modules, the relative height between the pump and the nozzles of each module, as well as the pipe length, will differ. Therefore, by storing the minimum discharge pressure for each module, a characteristic curve that better matches the module's characteristics can be obtained.

[0165] If one combination value obtained when the processing liquid supply unit 40 is operated is acquired during installation (when the processing liquid is introduced into the device), it can be applied feedforward during actual discharge for the purpose of adjusting the discharge volume. Alternatively, the combination value may be acquired during actual discharge for the purpose of adjusting the discharge volume, and the pressure may be set in a feedback manner during the next actual discharge.

[0166] Calibration curve C used in the above methods 1 to 4 X0 In fact, determining this would require complicated procedures such as measuring the discharge volume of the processing liquid with an electronic balance. In contrast, if the method using the characteristic straight line described above is adopted, the calibration curve C X0 Since it becomes unnecessary to perform the necessary steps to determine the desired output, the discharge volume of the processing solution can be adjusted more easily.

[0167] [Effect] According to the coating and developing apparatus 2 and control parameter setting method described above, the film thickness value of the processed film on the substrate after film formation by the first film formation module is obtained based on the first parameter group, and the film thickness value of the processed film on the substrate after film formation by the second film formation module is obtained based on the second parameter group. The first and second parameter groups are updated so that the difference between these values ​​becomes smaller. As a result, the difference in film thickness formed on the substrate by different modules is reduced.

[0168] Conventionally, in order to adjust the film thickness of the processed film formed on substrates processed by the same type of film formation module, it has been considered to correct the control parameters in each module. However, the film thickness value of the substrate after the film processing was actually performed by each module was not measured, and the first and second parameter groups were not updated to reduce the difference in the results. In the above configuration, since the adjustment is made to reduce the film thickness value based on the measurement results of each module, it becomes possible to further reduce the difference in film thickness values ​​by making finer adjustments to the control parameters.

[0169] Furthermore, by obtaining the film thickness value of the processed film on the substrate after film formation using the updated first and second parameter groups, it is possible to verify whether the difference in film thickness values ​​has been reduced by the updated first and second parameter groups. Therefore, if the difference in film thickness values ​​has not been reduced, it is possible to take measures such as updating the first and second parameter groups again, as described above. Thus, the difference in film thickness formed on the substrate in different modules is further reduced.

[0170] If the film formation module includes a processing liquid supply unit 40, the discharge state of the processing liquid from the processing liquid supply unit 40 may affect the film thickness value. Therefore, as described above, by using a parameter that adjusts the discharge state of the processing liquid as a control parameter, it becomes possible to adjust the film thickness value to minimize the difference.

[0171] Furthermore, if the processing liquid supply unit 40 has an on / off valve 46, the flow of the processing liquid through the valve may affect the film thickness value. Therefore, by using the valve closing timing as a parameter to adjust the discharge state of the processing liquid, it becomes possible to adjust the film thickness value to minimize the difference.

[0172] However, as described above, changing the closing timing of the on / off valve 46 affects the amount of processing fluid supplied, and changing the amount of processing fluid supplied may cause the film thickness to deviate significantly from a predetermined value. Therefore, by updating the discharge pressure so that the amount of processing fluid supplied from the processing fluid supply unit remains constant based on the changed closing timing, it is possible to suppress fluctuations in film thickness caused by changing the amount of processing fluid supplied.

[0173] Furthermore, if the film formation module includes a holding and rotating section that holds and rotates the substrate, the rotation speed of the holding and rotating section when supplying the processing liquid (discharge rotation speed) and the rotation speed of the holding and rotating section when drying the processing liquid (drying rotation speed) can each affect the film thickness. Specifically, the discharge rotation speed is the rotation speed when spreading the processing liquid within the surface of the workpiece W, and the film thickness distribution can change depending on the balance with the discharge speed of the processing liquid. On the other hand, the drying rotation speed is the rotation speed when drying, and if it is high, the amount of processing liquid that is not dried and is shaken off from the periphery (edge) of the workpiece W increases, and the overall processing film tends to become thinner, while if it is low, it tends to become thicker. Thus, both of these rotation speeds can affect the film thickness of the processing film. Therefore, by using the rotation speed of the holding and rotating section when supplying the processing liquid (discharge rotation speed) or the rotation speed of the holding and rotating section when drying (drying rotation speed) as control parameters, it is possible to adjust the film thickness to minimize the difference. Note that both the rotation speed of the holding and rotating section when supplying the processing liquid and when drying may be used.

[0174] The film thickness value may be expressed as a film thickness profile consisting of multiple components related to the shape of the film thickness distribution. Furthermore, the sensitivity of multiple control parameters to the film thickness value may be determined based on their relationship to each component included in the film thickness profile. Additionally, the sensitivity of multiple control parameters to the film thickness value may be used when updating the control parameters. By expressing the film thickness value as a film thickness profile consisting of multiple components related to the shape of the film thickness distribution, it is possible to identify what elements related to the film thickness distribution are included in the film thickness value. Moreover, by calculating the degree to which each control parameter included in the parameter group contributes to the variation in the film thickness value as its sensitivity to the film thickness value, it is possible to update the control parameters more accurately when updating them to minimize the difference in film thickness value.

[0175] Information relating to the sensitivity of multiple control parameters to film thickness values ​​may be transferred to a substrate processing apparatus other than the substrate processing apparatus. In this case, the information relating to the sensitivity of multiple control parameters to film thickness values ​​can be used by multiple substrate processing apparatuses, thus improving convenience.

[0176] Furthermore, the method may also include obtaining an offset amount for the film thickness value when acquiring the film thickness value of the processed film. As mentioned above, the measurement unit (spectroscopic measurement unit 60) that measures the film thickness may contain an offset component originating from the device configuration, etc. Therefore, by configuring the system to acquire the offset amount, it is possible to obtain a film thickness measurement result that takes the offset into account, and this information can be used to make finer adjustments to reduce the difference in film thickness values.

[0177] Furthermore, the configuration may include updating the first parameter group and the second parameter group for multiple types of film formation processes, and instructing the execution of a film formation process that combines the updated control parameters for the multiple types of film formation processes obtained for the same film formation module. In this case, when performing the same type of film formation process with the same film formation module, the process can be performed using the updated control parameters without having to perform the process of updating the control parameters again. Therefore, the convenience of film formation is improved.

[0178] [Differentiation] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0179] For example, the method for measuring the film thickness of the processed film AF on the workpiece W is not limited to the method described in the above embodiment. In the above embodiment, the film thickness is measured by irradiating with laser light, but if a measured value (estimated value) of the film thickness of the processed film AF formed on the workpiece W is obtained, the film thickness analysis method described in the above embodiment can be applied. Therefore, it is sufficient to obtain information on the film thickness at multiple measurement points on the workpiece W using known film thickness measurement methods, and the method is not particularly limited. Even when using the film thickness measurement method described in the above embodiment, the arrangement and configuration of each part can be changed as appropriate.

[0180] Furthermore, in the above example, the thickness of the processing film AF of the processing solution (resist) for forming the resist film is estimated. In contrast, the analysis method for film thickness described in the above embodiment may also be used to estimate the thickness of the coating film of the processing solution for forming films other than the resist film (for example, an underlayer film or an upper layer film). It may also be applied to the developing solution for developing the resist film.

[0181] Furthermore, the configuration of the corresponding film formation module may be changed depending on the type of film to be formed. Also, even if the target film is the same, the film formation module to which the control parameters are adjusted may be changed. The configuration described in the above embodiment is applicable regardless of the type of film formation module being formed. Moreover, the configuration described in the above embodiment is applicable even when there are multiple types of film formation modules, such as the liquid treatment unit U1 and heat treatment unit U2 described above.

[0182] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of Symbols]

[0183] 1...Substrate processing system (substrate processing device), 2...Coating and developing device, 3...Exposure device, 30...Rotating holding unit, 32...Holding unit, 34...Shaft, 36...Rotating drive unit, 40...Processing liquid supply unit, 42...Nozzle, 44...Supply source, 45...Pump, 46...On / off valve, 48...Nozzle drive unit, 60...Spectroscopic measurement unit (measurement unit), 100...Control device (control unit), 101...Substrate processing control unit, 102...Processing information storage unit, 103...Film thickness calculation unit, 104...Adjustment setting value acquisition unit, 105...Film thickness information acquisition unit, 106...Parameter sensitivity calculation unit, 107...Module correction value calculation unit, 108...Correction information storage unit, 110...Inter-module adjustment unit.

Claims

1. A method for setting control parameters for a first film formation module and a second film formation module that form a film on a substrate in a substrate processing apparatus, The acquisition of values ​​for a plurality of control parameters for controlling the film formation process in the first film formation module, and the values ​​for the plurality of control parameters for controlling the film formation process in the second film formation module, With respect to the film formed by the first film formation module and the film formed by the second film formation module, an in-plane tendency profile consisting of multiple components relating to the shape of the in-plane film thickness distribution of the substrate is obtained. Based on the in-plane tendency profiles of each of the multiple films repeatedly formed by the first film forming module while changing the values ​​of the multiple control parameters, the sensitivity representing the relationship between the values ​​of the multiple control parameters and the in-plane tendency profiles in the first film forming module is determined. To reduce the difference between the in-plane tendency profile of the film formed by the first film forming module and the in-plane tendency profile of the film formed by the second film forming module, the values ​​of the plurality of control parameters in the first film forming module and the values ​​of the plurality of control parameters in the second film forming module are updated based on the sensitivity. Includes, Each of the first film forming module and the second film forming module includes a holding and rotating unit for holding and rotating the substrate, a processing liquid supply unit for supplying processing liquid to the substrate rotated by the holding and rotating unit, and a valve that opens and closes to adjust the flow of the processing liquid in the flow path of the processing liquid supply unit. The plurality of control parameters used to determine the sensitivity include at least the valve closing timing, A control parameter setting method, wherein the updating includes updating the values ​​of a plurality of control parameters, including the valve closing timing in the second film forming module, based on the sensitivity of the first film forming module determined based on the in-plane tendency profile of the first film forming module, so that the difference between the in-plane tendency profile of the first film forming module and the in-plane tendency profile of the second film forming module becomes smaller.

2. The control parameter setting method according to claim 1, further comprising obtaining the in-plane tendency profiles of a film formed by the first film forming module based on the updated values ​​of the plurality of control parameters, and a film formed by the second film forming module based on the updated values ​​of the plurality of control parameters.

3. The processing liquid supply unit is capable of changing the discharge pressure of the processing liquid, A control parameter setting method according to claim 1 or 2, wherein when the value of the closing timing of the valve is updated, the discharge pressure is updated based on the changed value of the closing timing so that the amount of processing liquid supplied from the processing liquid supply unit remains constant.

4. The control parameter setting method according to any one of claims 1 to 3, wherein the plurality of control parameters include at least one of the rotation speed of the holding rotating part when supplying the processing liquid and the rotation speed of the holding rotating part when drying the supplied processing liquid.

5. The control parameter setting method according to any one of claims 1 to 4, further comprising transferring the information relating to the sensitivity to a substrate processing device other than the substrate processing device.

6. A control parameter setting method according to any one of claims 1 to 5, further comprising obtaining an offset amount of the film thickness value when obtaining the in-plane tendency profile in at least one of the first film formation module and the second film formation module.

7. For each of the multiple types of film formation processes, the multiple control parameters in the first film formation module are updated, and the multiple control parameters in the second film formation module are updated. A control parameter setting method according to any one of claims 1 to 6, further comprising instructing at least one of the first film formation module and the second film formation module to execute the plurality of film formation processes based on the updated plurality of control parameters for each of the plurality of film formation processes.

8. It includes a first film formation module that forms a film on a substrate and a control unit that controls the second film formation module, Each of the first film forming module and the second film forming module includes a holding and rotating unit for holding and rotating the substrate, a processing liquid supply unit for supplying processing liquid to the substrate rotated by the holding and rotating unit, and a valve for adjusting the flow of the processing liquid in the flow path of the processing liquid supplied by the processing liquid supply unit. The control unit, A parameter acquisition unit that acquires values ​​of a plurality of control parameters for controlling the film formation process in the first film formation module and values ​​of the plurality of control parameters for controlling the film formation process in the second film formation module, A film thickness information acquisition unit acquires an in-plane trend profile consisting of multiple components relating to the shape of the distribution of film thickness in the plane of the substrate, with respect to the film formed by the first film formation module and the film formed by the second film formation module, A parameter sensitivity calculation unit determines the sensitivity representing the relationship between the values ​​of the multiple control parameters and the in-plane tendency profile in the first film formation module, based on the in-plane tendency profile of each of the multiple films repeatedly formed by the first film formation module while changing the values ​​of the multiple control parameters, A parameter update unit updates the values ​​of a plurality of control parameters, including the valve closing timing in the second film forming module, based on the sensitivity of the first film forming module determined based on the in-plane tendency profile of the film thickness distribution of the first film forming module, so as to reduce the difference between the in-plane tendency profile of the film formed by the first film forming module and the in-plane tendency profile of the film formed by the second film forming module. A substrate processing apparatus, including

9. The substrate processing apparatus according to claim 8, wherein the film thickness information acquisition unit acquires the in-plane tendency profiles of the film formed by the first film forming module based on the updated plurality of control parameters and the film formed by the second film forming module based on the updated plurality of control parameters.

10. The processing liquid supply unit is capable of changing the discharge pressure of the processing liquid, The substrate processing apparatus according to claim 8 or 9, wherein the parameter update unit updates the discharge pressure based on the updated value of the closing timing of the valve, so that the amount of processing liquid supplied from the processing liquid supply unit remains constant.

11. The substrate processing apparatus according to any one of claims 8 to 10, wherein the plurality of control parameters include at least one of the rotation speed of the holding rotating part when supplying the processing liquid and the rotation speed of the holding rotating part when drying the supplied processing liquid.

12. The control unit, The substrate processing apparatus according to any one of claims 8 to 11, further comprising an offset amount acquisition unit for acquiring an offset amount of the film thickness value when acquiring the in-plane tendency profile in at least one of the first film formation module and the second film formation module.

13. The control unit, In the parameter update unit, for each of the multiple types of film formation processes, the multiple control parameters in the first film formation module and the multiple control parameters in the second film formation module are updated. A substrate processing apparatus according to any one of claims 8 to 12, further comprising an instruction unit that instructs at least one of the first film forming module and the second film forming module to execute the plurality of film forming processes obtained for the same film forming module, based on the plurality of updated control parameters for each of the plurality of film forming processes.

14. A computer-readable storage medium storing a program for causing a device to execute the control parameter setting method described in any one of claims 1 to 7.

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