Semiconductor laser device

Abstract

To provide a semiconductor laser device capable of reducing an inductance component.SOLUTION: A semiconductor laser device A2 includes: a semiconductor laser element 4; a switching element 5; a second conductive part 312 in which the switching element 5 is disposed on one side in a z direction; and a third conductive part 313 in which the semiconductor laser element 4 is disposed on the one side in the z direction. The second conductive part 312 and the third conductive part 313 are separated in a y direction, the second conductive part 312 has a second recess 3121 recessed to the other side in the y direction, the third conductive part 313 has a third projection 3132 projecting to the other side in the y direction, the third projection 3132 and the second recess 3121 overlap to each other as viewed in the y direction, and the semiconductor laser element 4 is at least partially disposed on the third projection 3132. By such a configuration, the semiconductor laser device A2 can be reduced in a size in the y direction.SELECTED DRAWING: Figure 21

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser device.

Background Art

[0002] A system using LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) has been proposed for three-dimensional distance measurement used in automobiles and the like (for example, Patent Document 1). The semiconductor laser device used as the light source of LiDAR emits pulsed laser light with a pulse width of several tens of nS or less. For this reason, the rate of change of current with time increases, and the loss due to the inductance component in the semiconductor laser device increases.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure has been conceived under the above circumstances, and an object thereof is to provide a semiconductor laser device capable of reducing the inductance component.

Means for Solving the Problems

[0005] A semiconductor laser apparatus provided by this disclosure comprises a semiconductor laser element, a switching element having a gate electrode, a source electrode, and a drain electrode, and a support member having a conductive portion that constitutes a conduction path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element, wherein the conductive portion has a first portion spaced apart from the semiconductor laser element and comprises one or more first wires connected to the source electrode of the switching element and the semiconductor laser element, and one or more second wires connected to the source electrode of the switching element and the first portion of the conductive portion. [Effects of the Invention]

[0006] The semiconductor laser device of this disclosure makes it possible to reduce the inductance component.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0008] [Figure 1] This is a plan view of a main part of a semiconductor laser device according to the first embodiment of this disclosure. [Figure 2] This is a bottom view showing a semiconductor laser device according to the first embodiment of this disclosure. [Figure 3] This is a cross-sectional view along the line III-III in Figure 1. [Figure 4] This is a cross-sectional view along the line IV-IV in Figure 1. [Figure 5] This is a cross-sectional view along the VV line in Figure 1. [Figure 6] This is a cross-sectional view along the line VI-VI in Figure 1. [Figure 7] This is a cross-sectional view along the line VII-VII in Figure 1. [Figure 8] This is a circuit diagram showing a laser system including a semiconductor laser device according to the first embodiment of this disclosure. [Figure 9]It is a circuit diagram showing a first modification example of a laser system including a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 10] It is a circuit diagram showing a second modification example of a laser system including a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 11] It is a plan view of a main part showing a first modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 12] It is a bottom view showing a first modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 13] It is a plan view of a main part showing a second modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 14] It is a bottom view showing a second modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 15] It is a plan view of a main part showing a third modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 16] It is a bottom view showing a third modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 17] It is a plan view of a main part showing a fourth modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 18] It is a bottom view showing a fourth modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 19] It is a plan view of a main part showing a fifth modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 20] It is a bottom view showing a fifth modification example of a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 21] It is a plan view of a main part showing a semiconductor laser device according to the second embodiment of the present disclosure. [Figure 22] It is a bottom view showing a semiconductor laser device according to the second embodiment of the present disclosure. [Figure 23] It is a plan view of a main part showing a first modification example of a semiconductor laser device according to the second embodiment of the present disclosure. [Figure 24]It is a bottom view of the main part showing a first modification of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 25] It is a cross-sectional view taken along line XXV-XXV of FIG. 23. [Figure 26] It is a plan view of the main part showing a second modification of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 27] It is a bottom view of the main part showing a second modification of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 28] It is a plan view of the main part showing a third modification of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 29] It is a bottom view of the main part showing a third modification of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 30] It is a plan view of the main part showing the semiconductor laser device according to the third embodiment of the present disclosure. [Figure 31] It is a bottom view showing the semiconductor laser device according to the third embodiment of the present disclosure. [Figure 32] It is a plan view of the main part showing a first modification of the semiconductor laser device according to the third embodiment of the present disclosure. [Figure 33] It is a bottom view showing a first modification of the semiconductor laser device according to the third embodiment of the present disclosure. [Figure 34] It is a plan view of the main part showing the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 35] It is a plan view of the main part showing the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 36] It is a bottom view showing the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 37] It is a cross-sectional view taken along line XXXVII-XXXVII of FIG. 34. [Figure 38] It is a plan view of the main part showing a first modification of the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 39] It is a plan view of the main part showing a first modification of the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 40]This is a bottom view showing a first modified example of a semiconductor laser device according to the fourth embodiment of this disclosure. [Figure 41] This is a plan view of a main part of a semiconductor laser device according to a fifth embodiment of this disclosure. [Figure 42] This is a bottom view showing a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 43] This is a cross-sectional view along the line XLIII-XLIII in Figure 41. [Figure 44] This is a plan view of a main part showing a first modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 45] This is a bottom view showing a first modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 46] This is a plan view of a main part showing a second modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 47] This is a bottom view showing a second modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 48] This is a plan view of a main part showing a third modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 49] This is a bottom view showing a third modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 50] This is a plan view of a main part showing a fourth modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 51] This is a bottom view showing a fourth modified example of a semiconductor laser device according to the fifth embodiment of this disclosure. [Figure 52] This is a plan view of a main part of a semiconductor laser device according to the sixth embodiment of this disclosure. [Figure 53] This is a bottom view showing a semiconductor laser device according to the sixth embodiment of this disclosure. [Figure 54] This is a plan view of a main part showing a first modified example of a semiconductor laser device according to the sixth embodiment of this disclosure. [Figure 55] This is a bottom view of a main part showing a first modified example of a semiconductor laser device according to the sixth embodiment of this disclosure. [Figure 56]This is a plan view of a main part of a semiconductor laser device according to the seventh embodiment of this disclosure. [Figure 57] This is a bottom view showing a semiconductor laser device according to the seventh embodiment of this disclosure. [Figure 58] This is a plan view of a main part showing a first modified example of a semiconductor laser device according to the seventh embodiment of this disclosure. [Figure 59] This is a bottom view showing a first modified example of a semiconductor laser device according to the seventh embodiment of this disclosure. [Modes for carrying out the invention]

[0009] Preferred embodiments of this disclosure will be described in detail below with reference to the drawings.

[0010] The terms "First," "Second," "Third," etc., used in this disclosure are merely labels and are not necessarily intended to assign a sequence to the objects.

[0011] <First Embodiment> Figures 1 to 8 show a semiconductor laser apparatus according to the first embodiment of this disclosure. The semiconductor laser apparatus A1 of this embodiment comprises a support member 1, a semiconductor laser element 4, a switching element 5, a capacitor 6, a first wire 71, a second wire 72, a third wire 73, and a translucent resin 8. The semiconductor laser apparatus A1 constitutes, for example, the laser system B1 shown in Figure 8 and is used as a pulsed laser light source for LiDAR, which is an example of two-dimensional distance measurement. However, the applications of the semiconductor laser apparatus of this disclosure are not limited in any way.

[0012] Figure 1 is a plan view of the main components of semiconductor laser apparatus A1. Figure 2 is a bottom view of the semiconductor laser apparatus related to semiconductor laser apparatus A1. Figure 3 is a cross-sectional view along line III-III in Figure 1. Figure 4 is a cross-sectional view along line IV-IV in Figure 1. Figure 5 is a cross-sectional view along line VV in Figure 1. Figure 6 is a cross-sectional view along line VI-VI in Figure 1. Figure 7 is a cross-sectional view along line VII-VII in Figure 1. Figure 8 is a circuit diagram showing laser system B1 including semiconductor laser apparatus A1. In these figures, the z direction corresponds to the first direction of this disclosure. Also, in Figure 1, the translucent resin 8 is omitted for the sake of explanation.

[0013] The support member 1 constitutes a conductive path to the semiconductor laser element 4 and the switching element 5, and also supports the semiconductor laser element 4 and the switching element 5. The specific configuration of the support member 1 is not particularly limited, and in this embodiment, the support member 1 has a base material 2 and a conductive part 3.

[0014] The base material 2 is made of an insulating material. The material of the base material 2 is not particularly limited and examples include epoxy resin and ceramics. In the following description, the case in which the base material 2 is made of glass epoxy resin will be described as an example. In this embodiment, the base material 2 has a main surface 21, a back surface 22, a first surface 23, a second surface 24, a third surface 25 and a fourth surface 26, and is rectangular in shape when viewed in the z direction.

[0015] The main surface 21 is a surface facing one side in the z direction, and in the illustrated example, it is a plane. The back surface 22 is a surface facing the other side in the z direction opposite to the main surface 21, and in the illustrated example, it is a plane. The first surface 23 is a surface facing one side in the x direction, and in the illustrated example, it is a plane. The second surface 24 is a surface facing the other side in the x direction opposite to the first surface 23, and in the illustrated example, it is a plane. The third surface 25 is a surface facing one side in the y direction, and in the illustrated example, it is a plane. The fourth surface 26 is a surface facing the other side in the x direction opposite to the third surface 25, and in the illustrated example, it is a plane.

[0016] The conductive portion 3 is a part that constitutes a conductive path to the semiconductor laser element 4 and the switching element 5, etc. The material of the conductive portion 3 is not particularly limited, and examples include metals such as Cu, Ni, Ti, and Au. Furthermore, the method of forming the conductive portion 3 is not particularly limited, and in the illustrated example, it is formed by plating, for example.

[0017] The conductive portion 3 of this embodiment includes a main surface portion 31, a back surface portion 32, and a connecting portion 33.

[0018] The main surface portion 31 is positioned on the main surface 21 of the base material 2. In the illustrated example, the main surface portion 31 includes a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, and a fourth main surface portion 314.

[0019] As shown in Figures 1, 3, 4, and 7, the first main surface 311 is located on the side of the second surface 24 in the x-direction and on the side of the third surface 25 in the y-direction of the main surface 21 of the base material 2. The shape of the first main surface 311 is not particularly limited, and in the illustrated example, it is a long rectangle with the x-direction as the longitudinal direction. The first main surface 311 is an example of the "first part" of this disclosure. In this embodiment, the first main surface 311 is spaced apart from the second surface 24 and the third surface 25.

[0020] As shown in Figures 1, 3, 4, and 6, the second main surface 312 is positioned closer to the fourth surface 26 in the y-direction than the first main surface 311. The x-direction dimension of the second main surface 312 is larger than the x-direction dimension of the first main surface 311. The second main surface 312 overlaps with the first main surface 311 in a y-direction view. The shape of the second main surface 312 is not particularly limited, and in the illustrated example, it is rectangular. The area of ​​the second main surface 312 is larger than that of the first main surface 311, the third main surface 313, and the fourth main surface 314. In this embodiment, the second main surface 312 is spaced apart from the first surface 23 and the second surface 24.

[0021] As shown in Figures 1, 3, 4, and 5, the third main surface 313 is positioned closer to the fourth surface 26 in the y-direction than the second main surface 312. The shape of the third main surface 313 is not particularly limited, and in the illustrated example, it is a long rectangle with the x-direction as the longitudinal direction. Also in the illustrated example, the x-direction dimension of the third main surface 313 is approximately the same as the x-direction dimension of the second main surface 312. The third main surface 313 overlaps with the first main surface 311 and the second main surface 312 when viewed in the y-direction. In this embodiment, the third main surface 313 is spaced apart from the first surface 23, the second surface 24, and the fourth surface 26.

[0022] As shown in Figures 1 and 7, the fourth main surface 314 is located closer to the first surface 23 in the x-direction relative to the first main surface 311, and closer to the third surface 25 in the y-direction relative to the second main surface 312. The shape of the fourth main surface 314 is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the y-direction dimension of the fourth main surface 314 is approximately the same as the y-direction dimension of the first main surface 311. Also, the x-direction dimension of the fourth main surface 314 is smaller than the x-direction dimension of the first main surface 311. The area of ​​the fourth main surface 314 is smaller than the area of ​​the first main surface 311. The fourth main surface 314 overlaps with the first main surface 311 in the x-direction view. Also, the fourth main surface 314 overlaps with the second main surface 312 and the third main surface 313 in the y-direction view. In this embodiment, the fourth main surface 314 is spaced apart from the first surface 23 and the third surface 25.

[0023] The back surface portion 32 is located on the back surface 22 of the base material 2. In the illustrated example, the back surface portion 32 includes a first back surface portion 321, a second back surface portion 322, a third back surface portion 323, and a fourth back surface portion 324. In this embodiment, the back surface portion 32 is used as a mounting terminal when mounting the semiconductor laser device A1 onto a circuit board (not shown) or the like.

[0024] As shown in Figures 1, 3, 4, and 7, the first back surface portion 321 is located on the side of the second surface 24 in the x-direction and on the side of the third surface 25 in the y-direction of the back surface 22 of the base material 2. The shape of the first back surface portion 321 is not particularly limited, and in the illustrated example, it is a long rectangle with the x-direction as the longitudinal direction. In this embodiment, the first back surface portion 321 is spaced apart from the second surface 24 and the third surface 25.

[0025] As shown in Figures 2, 3, 4, and 6, the second back surface portion 322 is positioned closer to the fourth surface 26 in the y-direction than the first back surface portion 321. The x-direction dimension of the second back surface portion 322 is larger than the x-direction dimension of the first back surface portion 321. The second back surface portion 322 overlaps with the first back surface portion 321 in a y-direction view. The shape of the second back surface portion 322 is not particularly limited, and in the illustrated example, it is rectangular. The area of ​​the second back surface portion 322 is larger than that of the first back surface portion 321, the third back surface portion 323, and the fourth back surface portion 324. In this embodiment, the second back surface portion 322 is spaced apart from the first surface 23 and the second surface 24.

[0026] As shown in Figures 2, 3, 4, and 5, the third back surface portion 323 is positioned closer to the fourth surface 26 in the y-direction than the second back surface portion 322. The shape of the third back surface portion 323 is not particularly limited, and in the illustrated example, it is a long rectangle with the x-direction as the longitudinal direction. Also, in the illustrated example, the x-direction dimension of the third back surface portion 323 is approximately the same as the x-direction dimension of the second back surface portion 322. The third back surface portion 323 overlaps with the first back surface portion 321 and the second back surface portion 322 when viewed in the y-direction. In this embodiment, the third back surface portion 323 is spaced apart from the first surface 23, the second surface 24, and the fourth surface 26.

[0027] As shown in Figures 2 and 7, the fourth back surface 324 is located closer to the first surface 23 in the x-direction relative to the first back surface 321, and closer to the third surface 25 in the y-direction relative to the second back surface 322. The shape of the fourth back surface 324 is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the y-direction dimension of the fourth back surface 324 is approximately the same as the y-direction dimension of the first back surface 321. Also, the x-direction dimension of the fourth back surface 324 is smaller than the x-direction dimension of the first back surface 321. The area of ​​the fourth back surface 324 is smaller than the area of ​​the first back surface 321. The fourth back surface 324 overlaps with the first back surface 321 in the x-direction view. Also, the fourth back surface 324 overlaps with the second back surface 322 and the third back surface 323 in the y-direction view. The fourth portion 324 of the back surface in this embodiment is spaced apart from the first surface 23 and the third surface 25.

[0028] The connecting section 33 provides electrical connectivity between each part of the main surface 31 and each part of the back surface 32. The specific configuration of the connecting section 33 is not particularly limited, and in the illustrated example, as shown in Figures 1 and 2, it includes a plurality of first connecting sections 331, a plurality of second connecting sections 332, a plurality of third connecting sections 333, and a fourth connecting section 334. The number of first connecting sections 331, second connecting sections 332, third connecting sections 333, and fourth connecting sections 334 is not limited in any way.

[0029] The specific configurations of the first contact portion 331, the second contact portion 332, the third contact portion 333, and the fourth contact portion 334 are not particularly limited. In this embodiment, as shown in Figures 1 to 7, they penetrate the substrate 2 in the thickness direction in the inner region of the substrate 2 in a view in the z direction (the region spaced apart from the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26). These first contact portions 331, 2, 3, and 4 are provided by forming a metal plating layer on the inner surface of a through hole formed in the substrate 2, and reach the main surface 21 and the back surface 22. In the illustrated example, the interiors of the first contact portion 331, 2, 3, and 4 contact portions 334 are filled with resin, but they may also be filled with metal, for example.

[0030] As shown in Figures 1, 2, 3, 4, and 7, the multiple first connecting portions 331 are connected to the main surface first portion 311 and the back surface first portion 321, and link the main surface first portion 311 and the back surface first portion 321. In this embodiment, the multiple first connecting portions 331 are arranged along the x-direction.

[0031] As shown in Figures 1, 2, and 6, the multiple second connecting portions 332 are connected to the first back surface portion 321 and the second back surface portion 322, and connect the second main surface portion 312 and the second back surface portion 322. In this embodiment, the multiple second connecting portions 332 are arranged closer to the first surface 23 in the x direction. In the illustrated example, the multiple second connecting portions 332 are arranged in a matrix along the x and y directions.

[0032] As shown in Figures 1, 2, 3, and 5, the multiple third connecting portions 333 are connected to the main surface third portion 313 and the back surface third portion 323, and link the main surface third portion 313 and the back surface third portion 323. In this embodiment, the multiple third connecting portions 333 are arranged along the x-direction. Furthermore, the multiple third connecting portions 333 are positioned closer to the first surface 23 in the x-direction.

[0033] As shown in Figures 1, 2, and 7, the fourth connecting portion 334 is connected to the main surface fourth portion 314 and the back surface fourth portion 324, and connects the main surface fourth portion 314 and the back surface fourth portion 324. Unlike the illustrated example, a configuration having multiple fourth connecting portions 334 is also possible.

[0034] The semiconductor laser element 4 is the light source of the semiconductor laser device A1 and includes an active layer made of a semiconductor layer. In this embodiment, as shown in Figure 3, the semiconductor laser element 4 has a first laser electrode 41 and a second laser electrode 42. The first laser electrode 41 is provided on the side facing the main surface 21 in the z direction. The second laser electrode 42 is provided on the side facing the back surface 22 in the z direction. In Figure 1, the first laser electrode 41 is omitted. In this embodiment, the first laser electrode 41 is the anode electrode and the second laser electrode 42 is the cathode electrode.

[0035] As shown in Figures 1 and 3, in this embodiment, the semiconductor laser element 4 is arranged on the main surface third portion 313. More specifically, the second laser electrode 42 of the semiconductor laser element 4 is electrically bonded to the main surface third portion 313 by a conductive bonding material 49. The conductive bonding material 49 is, for example, solder or silver paste. In the illustrated example, the semiconductor laser element 4 is enclosed within the main surface third portion 313 when viewed in the z direction. The semiconductor laser element 4 emits laser light L in the y direction toward the side where the fourth surface 26 faces. Also, in the illustrated example, the semiconductor laser element 4 overlaps with the third connecting portion 333 located furthest toward the second surface 24 in the x direction when viewed in the z direction.

[0036] The switching element 5 is an element for switching the current to the semiconductor laser element 4 ON / OFF. The switching element 5 is a transistor such as an FET made of Si, SiC, or GaN, for example. When the switching element 5 is made of SiC, it is suitable for increasing the speed of switching. As shown in Figures 1, 3, and 6, the switching element 5 of this embodiment has an element body 51, a gate electrode 52, a source electrode 53, and a drain electrode 54. The element body 51 is made of a semiconductor material such as Si or SiC and has an element main surface 511 and an element back surface 512. The element main surface 511 is the surface that faces the same side as the main surface 21 in the z direction. The element back surface 512 is the surface that faces the same side as the back surface 22 in the z direction.

[0037] The gate electrode 52 is located on the main surface 511 of the element. In the illustrated example, the gate electrode 52 is located closer to the first surface 23 in the x-direction and closer to the third surface 25 in the y-direction. The shape of the gate electrode 52 is not particularly limited, and in the illustrated example, it is rectangular in the z-direction.

[0038] The source electrode 53 is positioned on the main surface 511 of the element. In the illustrated example, the source electrode 53 is L-shaped in the z-direction and is positioned in the region on the second surface 24 side in the x-direction and in the region closer to the fourth surface 26 in the y-direction relative to the gate electrode 52.

[0039] The drain electrode 54 is positioned on the back surface 512 of the element, and in the illustrated example, it covers almost the entire surface of the back surface 512 of the element.

[0040] The switching element 5 is positioned on the second main surface 312 by electrically bonding its drain electrode 54 to the second main surface 312 with a conductive bonding material 59. The conductive bonding material 59 is, for example, solder or silver paste. In this embodiment, the switching element 5 is positioned on the second main surface 312 closer to the first surface 23 in the x-direction. Furthermore, the switching element 5 overlaps with all of the multiple second contact portions 332 in the z-direction view. The switching element 5 overlaps with the semiconductor laser element 4 in the y-direction view.

[0041] Capacitor 6 is for temporarily storing charge that will become the current that flows through the semiconductor laser element 4. As shown in Figures 1 and 4, in the illustrated example, capacitor 6 has electrodes 61 and 62. Electrode 61 is electrically connected to the main surface third portion 313 by a conductive bonding material 69. Electrode 62 is electrically connected to the main surface second portion 312 by a conductive bonding material 69. The conductive bonding material 69 is, for example, solder. Note that in Figure 1, the conductive bonding material 69 is omitted for the sake of explanation. In this embodiment, the semiconductor laser device A1 includes two capacitors 6. The two capacitors 6 are connected in parallel to each other. In this embodiment, the capacitors 6 are positioned closer to the second surface 24 in the x-direction with respect to the semiconductor laser element 4 and the switching element 5.

[0042] As shown in Figures 1 and 3, the multiple first wires 71 are connected to the source electrode 53 of the switching element 5 and the first laser electrode 41 of the semiconductor laser element 4. The first wires 71 are made of a metal such as Au, Cu, or Al. The number of multiple first wires 71 is not particularly limited, and in the illustrated example, there are three. The multiple first wires 71 are connected to the portion of the source electrode 53 closer to the fourth surface 26 in the y-direction. The multiple first wires 71 are connected to the first laser electrode 41 of the semiconductor laser element 4 so as to be aligned in the y-direction.

[0043] As shown in Figures 1 and 3, the multiple second wires 72 are connected to the source electrode 53 of the switching element 5 and the first main surface portion 311 of the main surface portion 31 of the conductive portion 3. The second wires 72 are made of a metal such as Au, Cu, or Al, and in this embodiment, they are made of Au, the same material as the first wire 71. The number of the multiple second wires 72 is not particularly limited, and in the illustrated example, there are two, which is fewer than the number of multiple first wires 71. Therefore, the resistance value of the multiple first wires 71 is smaller than the resistance value of the multiple second wires 72. The multiple second wires 72 are connected to the portion of the source electrode 53 closer to the third surface 25 in the y direction. The multiple second wires 72 are connected to the first main surface portion 311 so as to be aligned in the x direction.

[0044] As shown in Figure 1, the third wire 73 is connected to the gate electrode 52 of the switching element 5 and the fourth main surface portion 314 of the main surface portion 31 of the conductive portion 3. The third wire 73 is made of a metal such as Au, Cu, or Al, and in this embodiment, it is made of Au. The number of third wires 73 is not particularly limited, and in the illustrated example, there is one.

[0045] The light-transmitting resin 8 is arranged on the main surface 21 and covers the semiconductor laser element 4, the switching element 5, the multiple capacitors 6, the multiple first wires 71, the multiple second wires 72 and third wires 73. The light-transmitting resin 8 is made of a material that transmits laser light L from the semiconductor laser element 4, and is made of, for example, a transparent epoxy resin or silicone resin.

[0046] The shape of the translucent resin 8 is not particularly limited. In this embodiment, as shown in Figures 3 to 7, the translucent resin 8 has a main surface 81, a first resin surface 83, a second resin surface 84, a third resin surface 85, and a fourth resin surface 86.

[0047] The main surface 81 is the surface facing the same side as the main surface 21 in the z direction, and in the illustrated example, it is a plane. The first resin surface 83 is the surface facing the same side as the first surface 23 in the x direction. In the illustrated example, the first resin surface 83 is a plane and is flush with the first surface 23. The second resin surface 84 is the surface facing the same side as the second surface 24 in the x direction. In the illustrated example, the second resin surface 84 is a plane and is flush with the second surface 24. The third resin surface 85 is the surface facing the same side as the third surface 25 in the y direction. In the illustrated example, the third resin surface 85 is a plane and is flush with the third surface 25. The fourth resin surface 86 is the surface facing the same side as the fourth surface 26 in the y direction. In the illustrated example, the fourth resin surface 86 is a plane and is flush with the fourth resin surface 86. In this embodiment, the laser light L from the semiconductor laser element 4 is emitted from the fourth resin surface 86 of the translucent resin 8. By making the fourth resin surface 86 a flat and smooth surface, scattering of the laser light L can be suppressed and the emission efficiency can be increased.

[0048] As shown in Figure 8, the semiconductor laser device A1 can be used in the laser system B1. The laser system B1 comprises the semiconductor laser device A1, a gate driver 91, a DC power supply 92, a resistor 93, and a diode 94.

[0049] The gate driver 91 is connected to the gate electrode 52 of the switching element 5 via the fourth back portion 324, the fourth connecting portion 334, the fourth main surface portion 314, and the third wire 73. The gate driver 91 controls the drive voltage applied to the gate electrode 52.

[0050] The DC power supply 92 is a power source for emitting light from the semiconductor laser element 4. The anode electrode of the DC power supply 92 is connected to the second part 322 on the back surface via a resistor 93.

[0051] Diode 94 is provided between the first back surface portion 321 and the third back surface portion 323, and conducts current from the third back surface portion 323 to the first back surface portion 321. Diode 94 prevents excessive reverse voltage from being applied to the semiconductor laser element 4 and enables charging of the capacitor 6.

[0052] In laser system B1 with this configuration, when the switching element 5 is OFF, current IC flows from the DC power supply 92 through the path of resistor 93, back surface second part 322, capacitor 6, back surface third part 323, diode 94, and back surface first part 321, charging capacitor 6. Then, when the switching element 5 is ON, the charge stored in capacitor 6 flows as current IL through the path of switching element 5, first wire 71, and semiconductor laser element 4, causing the semiconductor laser element 4 to emit light.

[0053] Next, we will explain the operation of the semiconductor laser device A1.

[0054] According to this embodiment, as shown in Figures 1 and 8, the current IG that flows when a voltage is applied from the gate driver 91 to the gate electrode 52 of the switching element 5 mainly flows from the source electrode 53 through the second wire 72 to the first back surface portion 321. On the other hand, the current IL that causes the semiconductor laser element 4 to emit light mainly flows from the source electrode 53 through the first wire 71 to the semiconductor laser element 4. Therefore, current IL and current IG mainly flow along different paths. This makes it possible to suppress, for example, current IL from passing through the current path for applying the gate voltage to the gate electrode 52. Also, the source electrode 53 and the semiconductor laser element 4 are directly connected to each other by the first wire 71. Therefore, the inductance component of the current IL path can be reduced. This enables faster switching and further increases the peak current value of current IL. This is advantageous for emitting laser light L with a smaller pulse width at a higher power output, and is preferable as a light source device for LiDAR.

[0055] The main surface portion 31, which is the target of mounting the semiconductor laser element 4, switching element 5, and capacitor 6, and connecting the first wire 71, second wire 72, and third wire 73, is arranged on the main surface 21, and the back surface portion 32, which is used as a connection terminal to the outside, is arranged so as to overlap each other when viewed in the z direction. This is suitable for miniaturization of the semiconductor laser device A1 when viewed in the z direction. The main surface portion 31 and the back surface portion 32 are connected by a connecting portion 33. The connecting portion 33 includes a first connecting portion 331, a second connecting portion 332, a third connecting portion 333, and a fourth connecting portion 334 that penetrate the substrate 2. The first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 are all shaped along the z direction and are not bent. Therefore, this is preferable for reducing the inductance component in the current path flowing through the semiconductor laser device A1.

[0056] As shown in Figure 1, the switching element 5 and the capacitor 6 are aligned in the x-direction. The semiconductor laser element 4 is mounted on the third main surface 313, which is located closer to the main surface 21 in the y-direction relative to the switching element 5 and the capacitor 6. Therefore, the path length from the source electrode 53 of the switching element 5 to the second main surface 312, via the first wire 71, the semiconductor laser element 4, the third main surface 313, and the capacitor 6, is set to be relatively short. This is suitable for reducing the inductance component of the current IL path in Figure 8.

[0057] The number of first wires 71 is greater than the number of second wires 72, and the resistance of the first wires 71 is smaller than the resistance of the second wires 72. A current IL flows through the first wires 71, causing the semiconductor laser element 4 to emit light. Current IL is significantly larger than current IG. Therefore, by reducing the resistance of the first wires 71, electrical losses can be suppressed.

[0058] The number of second wires 72 is greater than the number of third wires 73. This helps to suppress electrical losses related to current IG.

[0059] Figures 9 to 59 show modified examples and other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals.

[0060] <Laser System B1, First Variation> Figure 9 shows a first modified example of laser system B1. Laser system B11 of this modified example includes a resistor 95. The resistor 95 is connected in series with the diode 94 between the third back surface portion 323 and the first back surface portion 321. By including the resistor 95, it is possible to suppress the current value fluctuations that occur when the switching element 5 is switched from the ON state to the OFF state.

[0061] <Laser System B1, Second Variation> Figure 10 shows a second modified version of laser system B1. In this modified version, laser system B12 does not have the diode 94 described above. A resistor 95 is provided between the first back surface part 321 and the third back surface part 323. In this modified version, current can always flow from the first back surface part 321 to the third back surface part 323, but the laser system B12 can be operated by adjusting the operating conditions.

[0062] <First Embodiment, First Modification> Figure 11 is a plan view of the main part showing the first modified semiconductor laser device A1. Figure 12 is a bottom view showing the first modified semiconductor laser device A1. In this modified semiconductor laser device A11, the first main surface 311 is positioned on the main surface 21 of the substrate 2 closer to the first surface 23 in the x direction, and the fourth main surface 314 is positioned closer to the second surface 24 in the x direction. The second main surface 312 is positioned closer to the fourth surface 26 in the y direction relative to the first main surface 311 and the fourth main surface 314. The third main surface 313 is positioned closer to the fourth surface 26 in the y direction relative to the second main surface 312. The x-direction dimensions of the second main surface 312 and the third main surface 313 are approximately the same.

[0063] The first back surface portion 321 is positioned on the back surface 22 of the base material 2 closer to the first surface 23 in the x-direction, and the fourth back surface portion 324 is positioned closer to the second surface 24 in the x-direction. The second back surface portion 322 is positioned closer to the fourth surface 26 in the y-direction relative to the first back surface portion 321 and the fourth back surface portion 324. The third back surface portion 323 is positioned closer to the fourth surface 26 in the y-direction relative to the second back surface portion 322. The x-direction dimensions of the second back surface portion 322 and the third back surface portion 323 are approximately the same.

[0064] In this example, the second main surface 312 has a protrusion 3122. The protrusion 3122 projects from the portion closer to the second surface 24 in the x-direction toward the fourth surface 26 in the y-direction. The third main surface 313 has a protrusion 3133. The protrusion 3133 projects from the portion closer to the first surface 23 in the x-direction toward the third surface 25 in the y-direction. The protrusions 3122 and 3133 are aligned in the x-direction and overlap when viewed in the x-direction.

[0065] The switching element 5 is positioned such that its center in the x-direction substantially coincides with the second portion 312 of the main surface. The gate electrode 52 is positioned closer to the second surface 24 in the x-direction, and the source electrode 53 is positioned in the region closer to the first surface 23 in the x-direction and the region closer to the fourth surface 26 in the y-direction relative to the gate electrode 52.

[0066] The semiconductor laser element 4 is positioned so as to overlap with the protrusion 3133 in the y-direction view. The electrode 62 of the capacitor 6 is electrically connected to the protrusion 3122 of the second main surface 312. The semiconductor laser element 4 and the capacitor 6 are aligned in the x-direction and overlap each other in the x-direction view. In addition, the capacitor 6 overlaps with the switching element 5 in the y-direction view.

[0067] This modified configuration also allows for a reduction in the inductance component. Furthermore, the configuration in which the switching element 5 and the capacitor 6 overlap in the y-direction view allows for a reduction in the x-direction dimension of the semiconductor laser device A11. Additionally, the configuration in which the protrusions 3122 and 3133 overlap in the x-direction view allows for a reduction in the y-direction dimension of the semiconductor laser device A11.

[0068] <First Embodiment, Second Modification> Figure 13 is a plan view of the main part showing a second modified example of semiconductor laser device A1. Figure 14 is a bottom view showing a second modified example of semiconductor laser device A1. This modified semiconductor laser device A12 differs from the semiconductor laser device A11 described above in that it is equipped with two semiconductor laser elements 4.

[0069] The two semiconductor laser elements 4 are arranged side by side in the x-direction. Each of the two semiconductor laser elements 4 emits laser light L in the y-direction.

[0070] Multiple first wires 71 are connected to the source electrode 53 and the first laser electrode 41 of one semiconductor laser element 4 and the first laser electrode 41 of the other semiconductor laser element 4, and each has a bent shape.

[0071] This modified version also allows for a reduction in the inductance component. Furthermore, by incorporating two semiconductor laser elements 4, higher brightness can be achieved.

[0072] <First Embodiment, Third Modification> Figure 15 is a plan view of the main part showing a third modified example of semiconductor laser device A1. Figure 16 is a bottom view showing a third modified example of semiconductor laser device A1. This modified semiconductor laser device A13 differs from the semiconductor laser device A12 described above in that the two semiconductor laser elements 4 emit laser light L in the x direction.

[0073] The two semiconductor laser elements 4 are arranged side by side in the y-direction. One of the semiconductor laser elements 4 is positioned on the protrusion 3133. Each of the two semiconductor laser elements 4 emits laser light L in the x-direction.

[0074] This modified version also allows for a reduction in the inductance component. Furthermore, by incorporating two semiconductor laser elements 4, higher brightness can be achieved. As can be seen from this modified version, the direction in which the laser beam L is emitted can be set in various ways.

[0075] <First Embodiment, Fourth Modification> Figure 17 is a plan view of the main part showing a fourth modified example of semiconductor laser device A1. Figure 18 is a bottom view showing a fourth modified example of semiconductor laser device A1. In this modified example, semiconductor laser device A14 differs from semiconductor laser device A13 described above in the number of semiconductor laser elements 4.

[0076] In this modified example, there is one semiconductor laser element 4. The semiconductor laser element 4 is arranged on the protrusion 3133.

[0077] This modification also makes it possible to reduce the inductance component. As can be seen from the semiconductor laser device A13 and this modification, the number of semiconductor laser elements 4 can be set in various ways.

[0078] <First Embodiment, Fifth Modification> Figure 19 is a plan view of the main parts showing a fifth modified example of semiconductor laser device A1. Figure 20 is a bottom view showing a fifth modified example of semiconductor laser device A1. This modified example of semiconductor laser device A15 includes a diode 94.

[0079] Diode 94 is provided in series between the first main surface portion 311 and the third main surface portion 313, and allows current to flow from the third main surface portion 313 to the first main surface portion 311. In the illustrated example, diode 94 is mounted on the first main surface portion 311.

[0080] In the illustrated example, the semiconductor laser element 4 is configured to emit laser light L in the x direction, but it is not limited to this configuration; for example, it may be configured to emit laser light L in the y direction. The arrangement of the main surface part 1 311, main surface part 2 312, main surface part 313, main surface part 5 315, back surface part 1 321, back surface part 2 322, and intermediate part 2 342 is not limited in any way as long as it can form the circuit configured in the illustrated example.

[0081] This modification also makes it possible to reduce the inductance component. By integrating the diode 94 into the semiconductor laser device A15, it is particularly advantageous to reduce the inductance component of the current IC conduction path through the diode 94.

[0082] <Second Embodiment> Figure 21 is a plan view of the main components of a semiconductor laser apparatus according to the second embodiment of this disclosure. Figure 22 is a bottom view of a semiconductor laser apparatus according to the second embodiment of this disclosure.

[0083] In the semiconductor laser apparatus A2 of this embodiment, the second main surface 312 has a recess 3121. The recess 3121 is a portion of the second main surface 312 that is recessed toward the third surface 25 in the y-direction from the fourth surface 26 side in the y-direction. The recess 3121 is located in the center of the second main surface 312 in the x-direction.

[0084] The third main surface 313 of this embodiment has a protrusion 3132. The protrusion 3132 is a portion of the third main surface 313 that protrudes toward the third surface 25 in the y-direction. The protrusion 3132 is located in the x-center of the third main surface 313. In addition, the protrusion 3132 overlaps with the recess 3121 when viewed in the y-direction.

[0085] The semiconductor laser element 4 is positioned so as to overlap with the protrusion 3132 in the y-direction view, and overlaps with at least a portion of the protrusion 3132 in the z-direction view. The two capacitors 6 are positioned on either side of the semiconductor laser element 4 in the x-direction. The two capacitors 6 do not overlap with the recess 3121 and the protrusion 3132 in the y-direction view.

[0086] This embodiment also makes it possible to reduce the inductance component. Furthermore, because the semiconductor laser element 4 is positioned closer to the x-center of the support member 1, it is possible to emit laser light L from a position closer to the x-center of the semiconductor laser device A2.

[0087] A recess 3121 is formed in the second main surface 312, and a protrusion 3132 is formed in the third main surface 313. The recess 3121 and the protrusion 3132 overlap in the y-direction view, and the semiconductor laser element 4 overlaps with the recess 3121 and the protrusion 3132 in the y-direction view. With this configuration, the y-direction dimension of the semiconductor laser device A2 can be reduced.

[0088] <Second Embodiment, First Modification> Figure 23 is a plan view of the main part showing a first modified example of semiconductor laser device A2. Figure 24 is a bottom view of the main part showing a first modified example of semiconductor laser device A2. Figure 25 is a cross-sectional view along the line XXV-XXV in Figure 23.

[0089] In the modified semiconductor laser apparatus A21, the substrate 2 has a recess 261. The recess 261 is a portion recessed from the fourth surface 26 toward the third surface 25 in the y-direction. The recess 261 is located near the center of the substrate 2 in the x-direction. The main surface third portion 313 has a recess 3131 and a protrusion 3132. The recess 3131 is a portion of the main surface third portion 313 that is recessed toward the third surface 25 in the y-direction from the portion of the main surface third portion 313 toward the fourth surface 26 in the y-direction. The protrusion 3132 is a portion of the main surface third portion 313 that is projected toward the third surface 25 in the y-direction. The recess 261, recess 3131, and protrusion 3132 overlap with each other when viewed in the y-direction. Also, the recess 261 and recess 3131 and the semiconductor laser element 4 overlap with each other.

[0090] As shown in Figure 25, the recess 261 is recessed toward the third surface 25 in the y-direction relative to the fourth resin surface 86 of the translucent resin 8. That is, the recess 261 is spaced apart from the fourth resin surface 86, and the translucent resin 8 is filled into the recess 261.

[0091] This modified form also allows for a reduction in the inductance component. Furthermore, the presence of the recess 261 brings the edge of the recess 261 closer to the y-direction edge of the semiconductor laser element 4 (the laser beam L emission portion). This suppresses interference of the laser beam L with the substrate 2. Additionally, because the fourth resin surface 86 is planar, the entire semiconductor laser device A21 has a simple rectangular parallelepiped shape, which has the advantage of being easy to transport and mount.

[0092] <Second Embodiment, Second Modification> Figure 26 is a plan view of the main parts showing a second modified example of semiconductor laser device A2. Figure 27 is a bottom view of the main parts showing a second modified example of semiconductor laser device A2.

[0093] This modified semiconductor laser device A22 comprises two semiconductor laser elements 4, and its other configurations are the same as or similar to those of the semiconductor laser device A2 described above. The two semiconductor laser elements 4 are mounted on the main surface third section 313 and are positioned between two capacitors 6. The two semiconductor laser elements 4 are aligned in the x-direction, and each emits laser light L in the y-direction. Each of the two semiconductor laser elements 4 is connected to the source electrode 53 of the switching element 5 by a plurality of first wires 71.

[0094] This modified configuration also allows for a reduction in the inductance component. Furthermore, the inclusion of two semiconductor laser elements 4 is advantageous for increasing brightness. Additionally, the arrangement of the two semiconductor laser elements 4 together near the x-center of the semiconductor laser device A22 facilitates miniaturization of optical components that refract or reflect light from the semiconductor laser device A22.

[0095] <Second Embodiment, Third Modification> Figure 28 is a plan view of the main parts showing a third modified example of semiconductor laser device A2. Figure 29 is a bottom view of the main parts showing a third modified example of semiconductor laser device A2.

[0096] This modified semiconductor laser device A23 is equipped with a diode 94, and its other configurations are the same as or similar to those of the semiconductor laser device A2 described above.

[0097] The first main surface 311 is positioned on the second surface 24 side in the x-direction relative to the second main surface 312. The fourth main surface 314 is positioned on the second surface 24 side in the x-direction relative to the second main surface 312. The fourth main surface 314 is positioned on the third surface 25 side in the y-direction relative to the first main surface 311.

[0098] Diode 94 is provided in series between the first main surface portion 311 and the third main surface portion 313, and allows current to flow from the third main surface portion 313 to the first main surface portion 311. In the illustrated example, diode 94 is mounted on the first main surface portion 311. Diode 94 overlaps with the switching element 5 in the x-direction view. Also, diode 94 overlaps with the two capacitors 6 in the x-direction view. Diode 94 does not overlap with the semiconductor laser element 4 in the x-direction view.

[0099] In the illustrated example, the semiconductor laser element 4 is configured to emit laser light L in the x direction, but it is not limited to this configuration; for example, it may be configured to emit laser light L in the y direction. The arrangement of the main surface part 1 311, main surface part 2 312, main surface part 313, main surface part 5 315, back surface part 1 321, back surface part 2 322, back surface part 323, and intermediate part 2 342 is not limited in any way as long as it can form the circuit configured in the illustrated example.

[0100] This modified version also makes it possible to reduce the inductance component. By integrating the diode 94 into the semiconductor laser device A15, it is particularly advantageous for reducing the inductance component of the current IC conduction path through the diode 94. Although it is possible to construct a laser system using the semiconductor laser device A23 without using the third back surface part 323, providing the third back surface part 323 improves the mounting strength and heat dissipation of the semiconductor laser device A23.

[0101] <Third Embodiment> Figure 30 is a plan view of the main part of a semiconductor laser apparatus according to the third embodiment of this disclosure. Figure 31 is a bottom view of a semiconductor laser apparatus according to the third embodiment of this disclosure. In the semiconductor laser apparatus A3 of this embodiment, the configuration of the main surface portion 31, the back surface portion 32, and the connecting portion 33 differs from that of the embodiments described above.

[0102] The main surface portion 31 of this embodiment has a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, a fourth main surface portion 314, and a fifth main surface portion 315. The arrangement of the first main surface portion 311, the second main surface portion 312, the third main surface portion 313, and the fourth main surface portion 314 is similar to, for example, the arrangement of a semiconductor laser device A11. However, in this embodiment, the second main surface portion 312 does not have a protrusion 3122 and is rectangular in z-direction view. Also, the third main surface portion 313 does not have a protrusion 3133 and is rectangular in z-direction view.

[0103] The fifth main surface 315 is positioned closer to the fourth surface 26 in the y-direction relative to the third main surface 313. The shape of the fifth main surface 315 is not particularly limited, and in the illustrated example, it is rectangular with the x-direction as the longitudinal direction.

[0104] The semiconductor laser element 4 has its second laser electrode 42 electrically connected to the third main surface portion 313 and is positioned on the third main surface portion 313. The electrode 62 of the capacitor 6 is electrically connected to the third main surface portion 313. The electrode 61 of the capacitor 6 is electrically connected to the fifth main surface portion 315.

[0105] As shown in Figure 31, the first back surface portion 321 is positioned closer to the third surface 25 in the y direction and closer to the first surface 23 in the x direction. The fourth back surface portion 324 is positioned closer to the second surface 24 in the x direction relative to the first back surface portion 321.

[0106] The second back surface portion 322 is positioned closer to the fourth surface 26 in the y-direction relative to the first back surface portion 321 and the fourth back surface portion 324. The second back surface portion 322 has a recess 3221. The recess 3221 is a portion of the second back surface portion 322 that is recessed toward the second surface 24 in the x-direction from the first surface 23 side in the x-direction.

[0107] The third portion 323 on the back surface is positioned to overlap with the recess 3221 in both the x-direction and the y-direction. The shape of the third portion 323 on the back surface is not particularly limited, and in the illustrated example, it is rectangular.

[0108] The connecting section 33 of this embodiment includes a first connecting section 331, a second connecting section 332, a third connecting section 333, a fourth connecting section 334, and a connecting section 335. The first connecting section 331 connects the first part 311 of the main surface and the first part 321 of the back surface. The fourth connecting section 334 connects the fourth part 314 of the main surface and the fourth part 324 of the back surface. The third connecting section 333 connects the third part 313 of the main surface and the third part 323 of the back surface. The fourth connecting section 334 connects the fourth part 314 of the main surface and the fourth part 324 of the back surface. The connecting section 335 connects the fifth part 315 of the main surface and the back surface 325.

[0109] As shown in Figure 1, the multiple second connecting portions 332 are connected to the portion of the main surface second portion 312 on the fourth surface 26 side in the y direction.

[0110] This embodiment also makes it possible to reduce the inductance component. Furthermore, in this embodiment, the current IL flows through a path formed by the first wire 71, the semiconductor laser element 4, the third main surface part 313, the capacitor 6, the fifth main surface part 315, the connecting part 335, and the second back surface part 322. This path forms a ring when viewed in the x direction. Therefore, the conduction path can be shortened compared to the case where most of the current IL conduction path is formed on the same plane.

[0111] Furthermore, because the second connecting portion 332 is positioned closer to the fourth surface 26 in the y-direction, the distance between the second connecting portion 332 and the connecting portion 335 in the y-direction can be shortened. This is advantageous for shortening the conduction path of the current IL.

[0112] <Third Embodiment, First Modification> Figure 32 is a plan view of the main part showing a first modified example of semiconductor laser device A3. Figure 33 is a bottom view showing a first modified example of semiconductor laser device A3. This modified semiconductor laser device A31 differs from the semiconductor laser device A3 described above in that it is equipped with two semiconductor laser elements 4.

[0113] This modified version also allows for a reduction in the inductance component. Furthermore, by incorporating two semiconductor laser elements 4, higher brightness can be achieved.

[0114] <Fourth Embodiment> Figure 34 is a plan view of the main parts of a semiconductor laser device according to the fourth embodiment of this disclosure. Figure 35 is a plan view of the main parts of a semiconductor laser device according to the fourth embodiment of this disclosure. Figure 36 is a bottom view of a semiconductor laser device according to the fourth embodiment of this disclosure. Figure 37 is a cross-sectional view taken along the line XXXVII-XXXVII in Figure 34. In this embodiment, the semiconductor laser device A4 has a conductive part 3 which includes a main surface part 31, a back surface part 32, a connecting part 33, and an intermediate part 34. Note that in Figure 35, the semiconductor laser element 4, the switching element 5, the main surface part 31, and the first layer 2A described later are omitted.

[0115] The arrangement of the first main surface part 311, the second main surface part 312, the third main surface part 313, and the fourth main surface part 314 of the main surface part 31 is the same as that of the semiconductor laser device A3 described above. The arrangement of the first back surface part 321, the second back surface part 322, the third back surface part 323, and the fourth back surface part 324 is the same as that of the semiconductor laser device A2 described above.

[0116] The substrate 2 of this embodiment consists of a first layer 2A and a second layer 2B. The first layer 2A and the second layer 2B are stacked on top of each other in the z direction. The first layer 2A constitutes the main surface 21. The second layer 2B constitutes the back surface 22.

[0117] The intermediate section 34 is positioned on the main surface 21B of the second layer 2B and is sandwiched between the first layer 2A and the second layer 2B. The intermediate section 34 includes intermediate section 1 341, intermediate section 2 342, intermediate section 3 343, and intermediate section 4 344. The arrangement of intermediate section 1 341, intermediate section 2 342, intermediate section 3 343, and intermediate section 4 344 is the same as the arrangement of reverse section 1 321, reverse section 2 322, reverse section 3 323, and reverse section 4 324.

[0118] In this embodiment, the first connecting section 331 connects the first main surface section 311, the first back surface section 321, and the first intermediate section 341 to each other. The second connecting section 332 connects the second main surface section 312, the second back surface section 322, and the second intermediate section 342 to each other. The third connecting section 333 connects the third main surface section 313, the third back surface section 323, and the third intermediate section 343 to each other. The fourth connecting section 334 connects the fourth main surface section 314, the fourth back surface section 324, and the fourth intermediate section 344 to each other.

[0119] As shown in Figures 35 and 37, the capacitor 6 has electrode 61 electrically connected to the intermediate third section 343 and electrode 62 electrically connected to the intermediate second section 342. Furthermore, a housing section 25A is formed in the first layer 2A. The housing section 25A is a portion capable of housing two capacitors 6. In the illustrated example, sealing resin 29 is filled between the housing section 25A and the capacitors 6.

[0120] This embodiment also makes it possible to reduce the inductance component. Furthermore, by mounting the capacitor 6 in the intermediate section 34, it is possible to have a configuration in which the switching element 5 and the capacitor 6 overlap in the z-direction, for example. This makes it possible to reduce the dimensions of the semiconductor laser device A4 in the x and y directions.

[0121] The current IL path is formed by the back surface second part 322 and the intermediate second part 342 forming a parallel path, and the back surface third part 323 and the intermediate third part 343 forming a parallel path. This makes it possible to reduce the resistance and inductance of the current IL path.

[0122] <Fourth Embodiment, First Modification> Figure 38 is a plan view of the main parts showing the first modified semiconductor laser device A4. Figure 39 is a plan view of the main parts showing the first modified semiconductor laser device A4. Figure 40 is a bottom view showing the first modified semiconductor laser device A4. The arrangement of the main surface portion 31 and the back surface portion 32 of this modified semiconductor laser device A41 is similar to that of the semiconductor laser device A3 described above. The semiconductor laser element 4, the switching element 5, and the capacitor 6 are arranged on the main surface portion 31.

[0123] The intermediate section 34 of this embodiment has an intermediate first section 341, an intermediate second section 342, an intermediate third section 343, and an intermediate fourth section 344. The arrangement of the intermediate first section 341, intermediate second section 342, intermediate third section 343, and intermediate fourth section 344 is the same as the arrangement of the back surface first section 321, back surface second section 322, back surface third section 323, and back surface fourth section 324 of the back surface section 32. In this embodiment as well, the second connecting section 332 is connected to the portion of the main surface second section 312 on the fourth surface 26 side in the y direction.

[0124] This embodiment also makes it possible to reduce the inductance component. Furthermore, by having an intermediate section 34 with the same arrangement configuration as the back surface section 32, it is possible to reduce the resistance and inductance of the current IL path while also miniaturizing the semiconductor laser device A41.

[0125] <Fifth Embodiment> Figure 41 is a plan view of the main part of a semiconductor laser apparatus according to the fifth embodiment of the disclosure. Figure 42 is a bottom view of a semiconductor laser apparatus according to the fifth embodiment of the disclosure. Figure 43 is a cross-sectional view taken along the line XLIII-XLIII in Figure 41. The semiconductor laser apparatus A5 of this embodiment differs from the embodiments described above mainly in the configuration of the connecting section 33. The semiconductor laser apparatuses A1 to A41 described above can be appropriately modified to have the configuration of the connecting section 33 as that of the connecting section 33 of this embodiment.

[0126] The arrangement of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 in this embodiment is similar to that of the semiconductor laser device A1 described above.

[0127] As shown in Figure 41, in this embodiment, the first main surface 311 reaches the second surface 24 and the third surface 25. The second main surface 312 reaches the first surface 23 and the second surface 24. The third main surface 313 reaches the first surface 23, the second surface 24 and the fourth surface 26. The fourth main surface 314 reaches the first surface 23 and the third surface 25.

[0128] As shown in Figure 42, in this embodiment, the first back surface portion 321 reaches the second surface 24 and the third surface 25. The second back surface portion 322 reaches the first surface 23 and the second surface 24. The third back surface portion 323 reaches the first surface 23, the second surface 24 and the fourth surface 26. The fourth back surface portion 324 reaches the first surface 23 and the third surface 25.

[0129] As exemplified by the first connecting portion 331 and connecting portion 335 shown in Figure 43, the connecting portion 33 of this embodiment is provided by forming a metal plating layer on the inner surface of a groove provided in the substrate 2 along the z-direction. Therefore, the connecting portion 33 of this embodiment is in contact with any of the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26.

[0130] Multiple first connecting portions 331 connect the main surface first portion 311 and the back surface first portion 321. The multiple first connecting portions 331 are arranged in the x-direction along the third surface 25.

[0131] Multiple second connecting sections 332 connect the main surface second section 312 and the back surface second section 322. The multiple second connecting sections 332 are arranged separately on both sides in the x-direction. Some of the second connecting sections 332 are arranged in the y-direction along the first surface 23. Other parts of the second connecting sections 332 are arranged in the y-direction along the second surface 24.

[0132] Multiple third connecting sections 333 connect the main surface third section 313 and the back surface third section 323. The multiple third connecting sections 333 are arranged in the x-direction along the fourth surface 26.

[0133] The fourth connecting section 334 connects the fourth main surface section 314 and the fourth back surface section 324. The fourth connecting section 334 is in contact with the third surface 25.

[0134] This embodiment also makes it possible to reduce the inductance component and achieves the same effect as the semiconductor laser device A1 described above.

[0135] <Fifth Embodiment, First Modification> Figure 44 is a plan view of the main part showing a first modified example of semiconductor laser device A5. Figure 45 is a bottom view showing a first modified example of semiconductor laser device A5.

[0136] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A51 is similar to that of the semiconductor laser device A11 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of the semiconductor laser device A5.

[0137] This modified version also reduces the inductance component and produces the same effect as the semiconductor laser device A11 described above.

[0138] <Fifth Embodiment, Second Modification> Figure 46 is a plan view of the main part showing a second modified example of semiconductor laser device A5. Figure 47 is a bottom view showing a second modified example of semiconductor laser device A5.

[0139] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A52 is similar to that of the semiconductor laser device A12 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of the semiconductor laser device A5 and the semiconductor laser device A51.

[0140] In this modified example, the multiple third connecting portions 333 do not overlap with the two semiconductor laser elements 4 in the y-direction view, and are positioned away from the two semiconductor laser elements 4. Furthermore, the third connecting portions 333 overlap with the capacitor 6 in the y-direction view.

[0141] This modification also allows for a reduction in the inductance component, achieving the same effect as the semiconductor laser device A12 described above.

[0142] <Fifth Embodiment, Third Modification> Figure 48 is a plan view of a main part showing a third modified example of the semiconductor laser device according to the fifth embodiment of this disclosure. Figure 49 is a bottom view showing a third modified example of the semiconductor laser device according to the fifth embodiment of this disclosure.

[0143] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A53 is similar to that of the semiconductor laser device A14 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of semiconductor laser devices A5, A51, and A52.

[0144] In this modified example, one of the multiple third connecting portions 333 overlaps with the semiconductor laser element 4 in the y-direction view. The other two third connecting portions 333 overlap with the capacitor 6 in the y-direction view.

[0145] This modified version also reduces the inductance component and produces the same effect as the semiconductor laser device A14 described above.

[0146] <Fifth Embodiment, Fourth Modification> Figure 50 is a plan view of the main part showing a fourth modified example of semiconductor laser device A5. Figure 51 is a bottom view showing a fourth modified example of semiconductor laser device A5.

[0147] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A54 is similar to that of the semiconductor laser device A13 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of semiconductor laser devices A5, A51, A52, and A53.

[0148] In this modified example, one of the multiple third connecting portions 333 overlaps with the two semiconductor laser elements 4 in the y-direction view. The other two third connecting portions 333 overlap with the capacitor 6 in the y-direction view.

[0149] This modified version also reduces the inductance component and produces the same effect as the semiconductor laser device A13 described above.

[0150] <Sixth Embodiment> Figure 52 is a plan view of the main components of a semiconductor laser apparatus according to the sixth embodiment of this disclosure. Figure 53 is a bottom view of a semiconductor laser apparatus according to the sixth embodiment of this disclosure.

[0151] The arrangement of the main surface portion 31, back surface portion 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A6 of this embodiment is similar to that of the semiconductor laser device A2 described above. The configuration of the first contact portion 331, second contact portion 332, third contact portion 333, and fourth contact portion 334 of the contact portion 33 is the same as that of the semiconductor laser device A5, etc.

[0152] In this embodiment, the two third connecting portions 333 are spaced apart in the x-direction. The two third connecting portions 333 overlap with the two capacitors 6 in the y-direction view, but do not overlap with the semiconductor laser element 4. In other words, the semiconductor laser element 4 is located between the two third connecting portions 333 in the x-direction.

[0153] This embodiment also makes it possible to reduce the inductance component and achieves the same effect as the semiconductor laser device A2 described above.

[0154] <Sixth Embodiment, First Modification> Figure 54 is a plan view of the main parts showing a first modified example of semiconductor laser device A6. Figure 55 is a bottom view of the main parts showing a first modified example of semiconductor laser device A6.

[0155] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A61 is similar to that of the semiconductor laser device A21 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of the semiconductor laser device A6.

[0156] In this modified example, the two third connecting portions 333 are spaced apart in the x-direction. The two third connecting portions 333 overlap with the two capacitors 6 in the y-direction view, but do not overlap with the semiconductor laser element 4 and the recess 261. In other words, the semiconductor laser element 4 and the recess 261 are located between the two third connecting portions 333 in the x-direction.

[0157] This modified version also allows for a reduction in the inductance component, achieving the same effect as the semiconductor laser device A21 described above.

[0158] <Seventh Embodiment> Figure 56 is a plan view of the main components of a semiconductor laser apparatus according to the seventh embodiment of this disclosure. Figure 57 is a bottom view of a semiconductor laser apparatus according to the seventh embodiment of this disclosure.

[0159] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A7 of this embodiment is similar to that of the semiconductor laser device A3 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, and fourth contact section 334 of the contact section 33 is the same as that of semiconductor laser devices A6, A61, etc.

[0160] In this embodiment, the connecting portion 33 further includes a connecting portion 335. The connecting portion 335 connects the main surface fifth portion 315 and the back surface second portion 322. Two of the connecting portions 335 overlap with the two capacitors 6 in a view in the y direction. The other connecting portion 335 does not overlap with the capacitors 6 in a view in the y direction. The third connecting portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x direction.

[0161] This embodiment also makes it possible to reduce the inductance component and achieves the same effects as the semiconductor laser device A3 described above. Furthermore, because the third contact portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x-direction, it is possible to bring the semiconductor laser element 4 closer to the first surface 23, thereby suppressing interference between the laser light L from the semiconductor laser element 4 and the support member 1.

[0162] <Seventh Embodiment, First Modification> Figure 58 is a plan view of the main part showing a first modified example of semiconductor laser device A7. Figure 59 is a bottom view showing a first modified example of semiconductor laser device A7.

[0163] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 in the modified semiconductor laser device A71 is similar to that of the semiconductor laser device A31 described above. The configuration of the first contact section 331, second contact section 332, third contact section 333, fourth contact section 334, and contact section 335 of the contact section 33 is the same as that of the semiconductor laser device A7.

[0164] Two of the connecting sections 335 overlap with the two capacitors 6 in the y-direction view. The other connecting section 335 does not overlap with the capacitor 6 in the y-direction view.

[0165] In this modified example, the two third connecting portions 333 are provided only on the side opposite to the two semiconductor laser elements 4 in the x-direction. The two third connecting portions 333 are aligned in the y-direction.

[0166] This modified configuration also reduces the inductance component and achieves the same effect as the semiconductor laser device A31 described above. Furthermore, because the third connecting portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x-direction, the semiconductor laser element 4 can be brought closer to the first surface 23, thereby suppressing interference between the laser light L from the semiconductor laser element 4 and the support member 1.

[0167] The semiconductor laser apparatus described herein is not limited to the embodiments described above. The specific configuration of each part of the semiconductor laser apparatus described herein can be modified in various ways.

[0168] This disclosure includes the following annotations:

[0169] [Note 1] Semiconductor laser element, A switching element having a gate electrode, a source electrode, and a drain electrode, A support member having a conductive portion that constitutes a conductive path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element, Equipped with, The conductive portion has a first portion spaced apart from the semiconductor laser element, One or more first wires connected to the source electrode of the switching element and the semiconductor laser element, A semiconductor laser apparatus comprising one or more second wires connected to the source electrode of the switching element and the first part of the conductive portion. [Note 2] The semiconductor laser apparatus as described in Appendix 1, wherein the electrical resistance of one or more of the first wires is smaller than the electrical resistance of one or more of the second wires. [Note 3] The first wire and the second wire are made of the same material. The semiconductor laser apparatus according to Appendix 2, comprising a plurality of the first wires, wherein the number of the plurality of the first wires is greater than the number of the one or more second wires. [Note 4] The switching element has an element body made of a semiconductor material, The element body has an element main surface and an element back surface that face opposite each other in the first direction, which is the thickness direction. The gate electrode and the source electrode are arranged on the main surface of the element. The semiconductor laser apparatus according to any one of the appendices 1 to 3, wherein the drain electrode is disposed on the back surface of the element. [Note 5] The semiconductor laser element has a first laser electrode positioned on the side facing the main surface of the element in the first direction, and a second laser electrode positioned on the side facing the back surface of the element. The semiconductor laser apparatus as described in Appendix 4, wherein the first wire is connected to the first laser electrode. [Note 6] The semiconductor laser apparatus according to Appendix 5, wherein the support member has a substrate having a main surface and a back surface facing opposite directions in the first direction. [Note 7] The semiconductor laser apparatus according to Appendix 6, wherein the conductive portion comprises a main surface portion disposed on the main surface and a back surface portion disposed on the back surface. [Note 8] The semiconductor laser apparatus according to Appendix 7, wherein the conductive portion includes a plurality of connecting portions that provide electrical conductivity between the main surface portion and the back surface portion. [Note 9] The semiconductor laser apparatus as described in Appendix 8, wherein the main surface portion includes the first main surface portion as the first part. [Note 10] The semiconductor laser apparatus according to Appendix 9, wherein the main surface portion includes a second main surface portion to which the drain electrode of the switching element is electrically joined. [Note 11] The semiconductor laser apparatus according to Appendix 10, wherein the main surface portion includes a third main surface portion to which the second laser electrode of the semiconductor laser element is electrically bonded. [Note 12] The main surface portion includes the fourth main surface portion, The semiconductor laser apparatus according to Appendix 11, comprising a third wire connected to the gate electrode and the fourth portion of the main surface. [Note 13] The semiconductor laser apparatus according to Appendix 12, further comprising a capacitor electrically interposed between the second main surface and the third main surface. [Note 14] The semiconductor laser apparatus as described in Appendix 13, wherein the capacitor is electrically connected to the second main surface and the third main surface. [Note 15] The semiconductor laser apparatus as described in Appendix 14, wherein the back surface includes a first back surface that is conductive to the first main surface, a second back surface that is conductive to the second main surface, a third back surface that is conductive to the third main surface, and a fourth back surface that is conductive to the fourth main surface. [Note 16] The main surface portion includes the fifth main surface portion, The semiconductor laser apparatus as described in Appendix 13, wherein the capacitor is electrically connected to the third part of the main surface and the fifth part of the main surface. [Note 17] The semiconductor laser apparatus as described in Appendix 16, wherein the back surface includes a first back surface that is conductive to the first main surface, a second back surface that is conductive to the second and fifth main surfaces, a third back surface that is conductive to the third main surface, and a fourth back surface that is conductive to the fourth main surface. [Note 18] The semiconductor laser apparatus according to Appendix 11, further comprising a diode electrically connected in series between the first main surface and the third main surface, which allows current to flow from the third main surface to the first main surface. [Note 19] The diode is mounted on the first part of the main surface, and is part of the semiconductor laser device as described in Appendix 18.

Claims

1. Semiconductor laser element, A switching element having a gate electrode, a source electrode, and a drain electrode, A second conductive portion on one side of the first direction in which the switching element is arranged, The device comprises a third conductive portion on one side of the first direction in which the semiconductor laser element is arranged, The second conductive portion and the third conductive portion are spaced apart in a second direction intersecting the first direction. The second conductive portion has a second recess that is recessed on the side opposite to the side on which the third conductive portion is located relative to the second conductive portion in the second direction, The third conductive portion has a third convex portion that protrudes to the other side in the second direction, The third convex portion and the second concave portion overlap in the second viewing direction. A semiconductor laser device in which at least a portion of the semiconductor laser element is arranged on the third protrusion.

2. The material includes a substrate that supports the second conductive portion and the third conductive portion from the other side in the first direction, The substrate has a substrate recess located on one side in the second direction with respect to the third conductive portion and recessed on the other side in the second direction, The third conductive portion has a third recess that is recessed to the other side in the second direction, The semiconductor laser apparatus according to claim 1, wherein the substrate recess and the third recess overlap with the second recess, the third protrusion and the semiconductor laser element in the second view.

3. It comprises two of the aforementioned semiconductor laser elements, The semiconductor laser apparatus according to claim 1 or 2, wherein at least a portion of each of the two semiconductor laser elements is arranged on the third protrusion.

4. A first conductive portion spaced apart from the second conductive portion and the third conductive portion, A semiconductor laser apparatus according to any one of claims 1 to 3, comprising one or more second wires connecting the source electrode and the first conductive portion.

5. The semiconductor laser apparatus according to claim 4, further comprising a diode that allows current to flow from the third conductive portion to the first conductive portion.

6. The semiconductor laser element is covered with a light-transmitting resin, The semiconductor laser apparatus according to claim 2, wherein a portion of the light-transmitting resin is filled into the recess of the substrate.

7. The semiconductor laser apparatus according to claim 5, wherein the diode is disposed on the first conductive portion.

8. The device comprises two capacitors, each electrically connected to the second conductive portion and the third conductive portion, The semiconductor laser apparatus according to any one of claims 1 to 6, wherein in a third direction intersecting the first and second directions, the semiconductor laser element is located between the two capacitors.

9. The semiconductor laser apparatus according to any one of claims 1 to 8, comprising the source electrode and one or more first wires connected to the semiconductor laser element.

10. A fourth conductive portion spaced apart from the second conductive portion and the third conductive portion, A semiconductor laser apparatus according to any one of claims 1 to 9, comprising the gate electrode and a third wire connected to the fourth conductive portion.

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