Laser-induced forward transfer method and apparatus, substrate, and method of manufacturing a display

Abstract

The present application provides a kind of laser-induced forward transfer method and device, substrate and display manufacturing method, for the pixel pitch of display is not the integer multiple of the pitch of optical device arranged on sapphire substrate.The arrangement pitch (3,4) of optical device (2) formed on sapphire substrate, and the arrangement pitch (5,7) of optical device planned to be transferred to carrier substrate (6), determine the ratio of the moving speed of donor substrate and acceptor substrate, and laser-induced forward transfer is carried out synchronously with the movement of the donor substrate, i.e.laser transfer, thereby transferring the optical device on sapphire substrate to carrier substrate with the same arrangement pitch as the pixel pitch of display.

Description

Technical Field

[0001] This invention relates to a packaging process for micro light-emitting diodes, and more particularly to a laser-induced forward transfer method and apparatus, a substrate, and a method for manufacturing a display. Background Technology

[0002] In recent years, nitride semiconductor optical devices have been used as backlights for liquid crystal displays or for signage displays. These applications require a large number of optical devices at once, necessitating high-speed transfer technology. As a high-speed transfer technology, stamping is typically used for simultaneous transfer, handling approximately 1,000 to tens of thousands of devices at a time.

[0003] Optical devices are mass-produced on sapphire substrates using semiconductor processes. MicroLEDs, with a surface area of ​​less than 100 μm, can number in the millions on a 4-inch substrate. These microLEDs, measuring only tens of μm, are separated from the sapphire substrate, which serves as an epitaxial substrate. Typically, optical devices arranged on the sapphire substrate are bonded to a support substrate and then separated from the sapphire substrate using laser lift-off.

[0004] A support substrate, or a substrate from which optical devices are transferred, is used as a carrier substrate. The optical devices are picked up from the carrier substrate at intervals corresponding to the pixel pitch of the display using a special imprinting process, and then packaged onto a backplane substrate. Therefore, the spacing between the optical devices on the sapphire substrate must be 1 / N times the pixel pitch of the display. Here, N is a positive integer.

[0005] Patent Document 1 describes the laser lifting of a nitride semiconductor from a sapphire substrate. Patent Documents 2 and 3 propose high-speed packaging using different imprinting methods. Patent Document 4 describes a laser-induced forward transfer device for laser-induced forward transfer from a donor substrate to a recipient substrate.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Publication No. 2007-534164

[0009] Patent Document 2: Japanese Patent Application Publication No. 2020-129638

[0010] Patent Document 3: Japanese Patent Application Publication No. 2018-163900

[0011] Patent Document 4: Japanese Patent Application Publication No. 2020-004478 Summary of the Invention

[0012] The problem that the invention aims to solve

[0013] However, the pixel pitch of a display varies depending on the display size or resolution such as 4K or 8K. Preparing the spacing of optical devices on the sapphire substrate corresponding to the pixel pitch hinders the mass production of these devices and increases costs. This is a common problem for screen devices using laser diodes or photodiodes.

[0014] The method of the present invention solves the problem of the aforementioned issue, namely, the situation where the pixel pitch of a display or the like does not meet the requirement that the pitch of an optical device is a positive integer multiple.

[0015] Technical means to solve the problem

[0016] The first invention is a laser-induced forward transfer method, which involves laser-induced forward transfer of an optical device on a sapphire substrate (as a donor substrate) to a carrier substrate (as a recipient substrate). The method comprises: a step of obtaining a reference position D and a spacing DP of an arrangement of optical devices formed on a sapphire substrate; a step of obtaining a reference position R and a spacing RP of the arrangement of the optical devices to be transferred to a carrier substrate by laser-induced forward transfer; a step of adjusting the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value, based on the reference position D and the reference position R; a step of calculating a scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the spacing DP and the spacing RP; a step of irradiating a laser on a plurality of optical devices arranged in a row from the back side of the sapphire substrate at the boundary surface between the sapphire substrate and the optical devices; a step of aligning the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on the reference position D and the reference position R, and performing a scanning operation on the sapphire substrate and the carrier substrate at the scanning speed ratio VR; and a step of irradiating a laser in conjunction with the scanning operation to perform laser-induced forward transfer. Here, "optical device" includes laser diodes or photodiodes, provided that the aforementioned processes are available.

[0017] The second invention is a laser-induced forward transfer method of the first invention, wherein the arrangement spacing DP is composed of the arrangement spacing DX in the X direction and the arrangement spacing DY in the Y direction, the arrangement spacing RP is composed of the arrangement spacing RX in the X direction and the arrangement spacing RY in the Y direction, and the scanning speed ratio VR is composed of the speed ratio VRX in the X direction calculated based on the arrangement spacing DX and the arrangement spacing RX, and the speed ratio VRY in the Y direction calculated based on the arrangement spacing DY and the arrangement spacing RY. The laser-induced forward transfer method further includes the following steps: after laser-induced forward transfer of the optical device on the sapphire substrate to the carrier substrate at the speed ratio VRY, the carrier substrate is used as the donor substrate instead of the sapphire substrate, and is installed by rotating it 90 degrees in the horizontal plane relative to the scanning direction, and laser-induced forward transfer is performed to the second carrier substrate at the speed ratio VRX.

[0018] The third invention is a laser-induced forward transfer method of the second invention, wherein the laser irradiation is a reduced projection using a photomask, the photomask having: a first opening, which corresponds to approximately one optical device in the Y direction and to two or more optical devices in the X direction at an arrangement spacing DX; and a second opening, which corresponds to approximately one optical device in the X direction and to two or more optical devices in the Y direction at an arrangement spacing RY. The laser-induced forward transfer method further includes the following steps: when laser-induced forward transfer is performed at a speed ratio VRY, the mask is switched using the first opening; when laser-induced forward transfer is performed at a speed ratio VRX, the mask is switched using the second opening.

[0019] The fourth invention is a laser-induced forward transfer method of the third invention, wherein the opening of the photomask is a group of openings that irradiate each optical device in a roughly optical device shape.

[0020] The fifth invention is a laser-induced forward transfer device that laser-induced forward transfers optical devices on a sapphire substrate (as a donor substrate) to a carrier substrate (as a recipient substrate). The device includes: a first processing unit that acquires a reference position D and an arrangement spacing DP of the optical devices formed on the sapphire substrate; a second processing unit that acquires a reference position R and an arrangement spacing RP of the optical devices to be transferred to the carrier substrate via laser-induced forward transfer; a platform and a platform controller that, based on the reference positions D and R, positions the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value. The system includes: adjusting the position of either or both of the sapphire substrate and the carrier substrate; a third processing unit that calculates the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement spacing DP and RP; a reduced projection optical system that irradiates multiple optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical devices; a platform and a platform controller that, based on reference positions D and R, align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane, causing the sapphire substrate and the carrier substrate to perform a scanning operation at the stated scanning speed ratio VR; and a laser device that irradiates the substrate in conjunction with the scanning operation.

[0021] The sixth invention is a laser-induced forward transfer method for transferring micro-element on a sapphire substrate (as a donor substrate) to a receiver substrate with an adhesive layer. The method includes: obtaining the three-dimensional dimensions of the micro-element arranged on the donor substrate, the reference position D of the arrangement, and the arrangement spacing DP; obtaining the reference position R and arrangement spacing RP of the arrangement of the micro-element to be laser-induced forward transfer onto the receiver substrate; based on the reference positions D and R, aligning the donor and receiver substrates, measuring their substrate spacing, and adjusting the position of either or both of the donor and receiver substrates such that the distance from the lower surface of the micro-element to the receiver substrate is a predetermined value; and aligning the relative positions of the donor and receiver substrates in a horizontal plane, and performing a reduced-size projection of the laser from the back side of the donor substrate at the boundary between the donor substrate and the micro-element, wherein the laser performing the reduced-size projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2J / cm 2 The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2kg / m 3 The adhesive layer has a hardness of 20 to 50 (Japanese Industrial Standards (JIS) Type A) and a thickness of 5 μm or more, with the specified values ​​falling within the range of 10 μm to 200 μm.

[0022] The effects of the invention

[0023] This results in the following effect: even when the pixel pitch of the display does not meet the requirements of an integer multiple of the pitch of the optical device, high-speed packaging using the imprinting method can still be performed. Attached Figure Description

[0024] Figure 1 This is a diagram showing the arrangement of microLEDs on a sapphire substrate, which serves as the donor substrate.

[0025] Figure 2 This is an example of a photomask pattern.

[0026] Figure 3 To 4 inches Example of laser irradiation of a (diameter) sapphire substrate.

[0027] Figure 4 This is a diagram showing the arrangement of microLEDs after laser-induced forward transfer in the Y direction.

[0028] Figure 5 This is a diagram showing the arrangement of microLEDs before and after laser-induced forward transfer in the X direction.

[0029] Figure 6 This is a diagram of a second carrier substrate that encapsulates red, green, and blue (RGB) signals.

[0030] [Explanation of reference numerals in the attached figures]

[0031] 1: Sapphire substrate

[0032] 2: Micro LED

[0033] 3: Spacing along the X-axis

[0034] 4: Y-axis spacing

[0035] 5: Adjusted spacing in the Y-axis direction

[0036] 6: First carrier substrate

[0037] 7: Adjusted spacing in the X-axis direction

[0038] 8: Second carrier substrate Detailed Implementation

[0039] The following describes embodiments of the present invention, but the present invention is not limited to these embodiments. Furthermore, in all the following drawings, the dimensions and proportions of the structural elements are appropriately different from the actual dimensions in order to facilitate identification of the structural elements on the drawings.

[0040] In this embodiment, the optical device is described as a GaN (gallium nitride) based semiconductor light-emitting diode (LED). LED manufacturers form multiple LEDs on a sapphire substrate. In the case of micro-LEDs smaller than 100 μm, the sapphire substrate is directly supplied to companies that manufacture displays using LEDs (hereinafter referred to as LED display manufacturers), or a carrier substrate that has been transferred using laser lifting is supplied to these companies.

[0041] Here, the processing starting from the sapphire substrate will be explained.

[0042] In the case of a 4-inch sapphire substrate, millions of micro-LEDs are formed on the substrate. Figure 1 The diagram shows the arrangement of microLEDs (2) formed on a sapphire substrate (1). The LED size is 20μm×40μm (X×Y), the arrangement spacing (3) in the X direction is 30μm, and the arrangement spacing (4) in the Y direction is 60μm.

[0043] This sapphire substrate is an example of a substrate on which an optical device is formed using the laser-induced forward transfer method of this embodiment. The back side of the sapphire substrate is ground by laser transmission, and the surface on which the LED is formed is subjected to a rough-height process for the purpose of increasing brightness.

[0044] Table 1 below describes the relationship between display type and pixel pitch. In the case of a 21-inch display, the pixel pitch becomes a positive integer multiple of the arrangement pitch of the sapphire substrate, so a carrier substrate suitable for imprinting can be manufactured by simply performing conventional laser separation, enabling high-speed packaging using imprinting.

[0045] [Table 1]

[0046] Types of monitors Pixel pitch 100-inch (4K) 0.577mm 100-inch (8K) 0.288mm 55-inch (4K) 0.316mm 55-inch (8K) 0.158mm 21-inch (4K) 0.120mm 21-inch (8K) 0.060mm

[0047] Here, the method for manufacturing a carrier substrate for a 100-inch display (4K, 8K) is described.

[0048] As shown in Table 1, the pixel pitch of a 100-inch display is 0.577mm at 4K (3840×2160 pixels) and 0.288mm at 8K (7680×4320 pixels), which is not an integer multiple of the aforementioned pixel pitch of 30μm and 60μm. A target pixel pitch of 72.1μm is chosen as the integer value. The pixel pitch is 8 times the target pixel pitch at 4K and 4 times the target pixel pitch at 8K.

[0049] Next, the carrier substrate for fabricating the target arrangement spacing using a laser-induced forward transfer device will be described. The laser-induced forward transfer device used is the one described in Patent Document 4. The sapphire substrate serves as the donor substrate of the laser-induced forward transfer device, with the surface where the microLEDs are formed facing downwards, and is adsorbed onto the donor platform. The carrier substrate having an adhesive layer serves as the recipient substrate of the laser-induced forward transfer device, and is adsorbed onto the recipient platform in a manner facing the sapphire substrate.

[0050] If the robot transporting the substrates to the platform has sufficient positioning accuracy, the coordinates of two or more pre-input alignment marks are moved to the position of a high-magnification camera. Image processing identifies the alignment marks, calculates the deviation from the camera center, and feeds this information back to the platform, thus achieving high-precision alignment. If the accuracy of the transport system is insufficient, a low-magnification camera is needed for alignment, or a positioning sensor is used for coarse adjustment.

[0051] After alignment, the gap between the substrates is adjusted along the Z-axis of the receiving platform. The specified value for the gap from the microLED to the adhesive layer is set based on the positions of each substrate measured by a height sensor, the thickness of the sapphire substrate, the thickness of the microLED, the thickness of the carrier substrate, and the thickness of the adhesive layer. This specified value is preferably 10 μm to 200 μm, more preferably 50 μm to 150 μm. This is because if the gap is narrower than 10 μm, contact may occur due to substrate deflection; if it is wider than 200 μm, the accuracy of the microLED's placement during transfer decreases.

[0052] Component damage and placement accuracy are related to air resistance during micro-LED flight, and the density of the gas between the donor and recipient substrates is also important. Table 2 below lists the densities of representative gases.

[0053] [Table 2]

[0054] gas <![CDATA[Density (kg / m 3 ), 0 °C]]> refer to Air 1.293 1.091 at 40℃ nitrogen 1.250 1.023 at 50℃ oxygen 1.429 1.168 at 50℃ ozone 2.14 Argon 1.784 1.159 at 50℃ helium 0.1785

[0055] In gases with low densities like helium, it's impossible to achieve a proper reduction in flight speed, leading to component damage such as breakage. If the gas density is too high, the drag caused by the gas is large, and the landing position accuracy deteriorates due to slight asymmetry. When the specified flight distance is between 10 μm and 200 μm, a gas density of 1 kg / m³ is preferred. 3 ~2kg / m 3 .

[0056] The ratio of the platform scanning speed of the sapphire substrate to that of the carrier substrate is the ratio of the arrangement pitch of the sapphire substrate to the target arrangement pitch of the carrier substrate for a 100-inch display. If the platform speed of the sapphire substrate is set as a reference of 200 mm / s, then the platform speed of the carrier substrate is 480.666667 mm / s, which is 2.403333333 times the platform speed in the X direction, and 240.333333 mm / s, which is 1.201666667 times the platform speed in the Y direction.

[0057] Regarding photomasks, chromium masks with 100nm–200nm chromium deposited on a 5-inch square quartz glass substrate were used to fabricate photomasks. Figure 1 The X-direction has a pattern of openings corresponding to the arrangement and size of 500 microLEDs, and in Figure 4 The Y-direction has a pattern of openings corresponding to the arrangement and size of 200 micro-LEDs.

[0058] Figure 2 The mask pattern is explained in the text. Figure 2 The black portion is a light-shielding chromium surface, while the white portion is an opening through which the laser passes. Because it's a 1 / 5 projection optics system, it becomes five times the field of view of the projection surface within the mask. Therefore, each LED opening is 100μm × 200μm, with a spacing of 150μm, and the length of the 500 opening groups is 74.95mm. If the adhesive layer of the carrier substrate is not damaged by laser irradiation, rectangular openings such as 75000μm × 250μm can also be used.

[0059] Alignment, ensuring the photomask coordinate system matches the platform coordinate system, is performed when changing masks. Mask alignment is also performed when switching patterns within the same mask, especially in applications requiring high-precision machining. The methods for mask alignment vary depending on the device architecture; some methods utilize a high-magnification camera to observe alignment marks formed on the mask and perform alignment, while others use a profiler mounted on the platform to observe the image projected onto the mask and perform alignment.

[0060] When there is a Θ deviation of the mask relative to the optical axis, that is, a Θ deviation of the mask relative to the scanning axis of the substrate platform, it is necessary to use the mask platform for alignment. The mask platform can be used to align the deviation in the XY direction in a plane perpendicular to the optical axis, or the mask can be aligned by having a correction value on the substrate platform side.

[0061] The actual laser-induced forward transfer action is described. The donor substrate is the aforementioned 4-inch diameter sapphire substrate. The recipient substrate is a 6-inch diameter quartz substrate with an adhesive layer of 30 hardness and 20 μm thickness on its surface. If the adhesive layer is too hard, damage such as microLED breakage may occur; if it is too soft, problems such as bouncing off or embedding in the adhesive layer may occur. Therefore, ideally, the hardness is 20–50 (JIS Type A), which is not easily affected by the type of recipient substrate, and the thickness of the adhesive layer is 5 μm or more, mainly due to the material properties. The hardness is more preferably 25–40. Furthermore, the thickness of the adhesive layer is preferably 100 μm or less, more preferably 10 μm to 50 μm.

[0062] first, Figure 1 Laser-induced forward transfer is performed in the Y direction. For the optical mask, it is set at... Figure 1 The X-direction has a pattern of openings corresponding to the arrangement and size of 500 microLEDs. The velocities of the isotropic regions of the donor and acceptor platforms are set to 200 mm / s and 240.333333 mm / s.

[0063] use Figure 3 The illumination method for a 4-inch diameter substrate is described. A mask pattern of approximately 15mm is scanned seven times using projection to achieve full illumination. The shaded areas are the illumination areas, illuminating only the micro-LED encapsulation locations.

[0064] Assuming the irradiation start position (X, Y) of the 4-inch diameter substrate serving as the donor substrate is (0, -10.0), the irradiation start position of the 6-inch diameter substrate serving as the recipient substrate is (0, -12.0166667). An acceleration distance is set such that the irradiation area is at a constant speed at the aforementioned start position, and the pulsed laser is triggered using a platform coordinate reference, irradiating only the coordinates containing the micro-LEDs.

[0065] Regarding the laser-induced forward transfer of GaN-based microLEDs from a sapphire substrate, a high energy density of 0.5 J / cm² is required due to the epitaxial substrate. 2 ~2J / cm 2 .

[0066] A portion of the arrangement of the results of laser-induced forward transfer is shown in Figure 4 The microLEDs are arranged in a longitudinally elongated ellipse with a widening spacing (5) in the Y direction on a 6-inch diameter substrate.

[0067] Next, proceed Figure 4 Laser-induced forward transfer in the X direction. A 6-inch diameter quartz substrate (first carrier substrate (6)) removed from the recipient platform is then... Figure 4 Rotate 90 degrees in the XY plane to adsorb as a donor substrate. Regarding the acceptor substrate, a blank 6-inch diameter quartz substrate is used as a second carrier substrate (8) for adsorption.

[0068] Regarding photomasks, switch to... Figure 4 The Y-direction has a pattern of openings corresponding to the arrangement and size of 200 microLEDs. The alignment of the donor substrate, acceptor substrate, and photomask is the same as described above.

[0069] The velocities for the isotropic regions of the donor and recipient platforms were set to 200 mm / s and 480.666667 mm / s, respectively. The irradiation method was the same as described above. Nine scans were performed for complete irradiation. Assuming the irradiation start position (X, Y) of the donor substrate was (0, -10.0), the irradiation start position of the recipient substrate was (0, -24.0333333). Based on the coordinates of the laser-induced forward transfer result in the first Y direction, the same scans as described above were performed, thereby obtaining the following... Figure 5 The result of laser-induced forward transfer with the arrangement spacing adjusted in the XY direction is shown.

[0070] Up to this point, adjustments have been made. Figure 1 The arrangement order in the X direction is adjusted after adjusting the spacing in the Y direction, but it is also possible to adjust the X direction and then adjust the Y direction.

[0071] The fabrication method for a carrier substrate of a monochrome microLED has been described. However, it is also possible to sequentially laser-induced forward transfer of each of the RGB microLEDs to fabricate a second carrier substrate with RGB arranged sequentially. If all three colors (RGB) are GaN-based, the process involves fabricating a first carrier substrate for each RGB color, while simultaneously laser-induced forward transfer of the second carrier substrate to offset the RGB colors. Figure 6 The image shows an example of a second carrier substrate encapsulating RGB. When R (red) is GaAs-based, it needs to be pre-transferred to a sapphire or quartz glass substrate with the electrodes as the surface, but a second carrier substrate with RGB arranged in the same order can be fabricated. In this case, the sapphire or quartz glass substrate is not an epitaxial substrate of a compound semiconductor, therefore the energy density during laser-induced forward transfer can be low, at 0.2 J / cm². 2 ~1.5J / cm 2 .

[0072] The embodiments of the present invention have been described in detail above. However, the present invention may be presented as follows (1) to (25) from different viewpoints.

[0073] (1) A laser-induced forward transfer method, wherein an optical device on a sapphire substrate serving as a donor substrate is laser-induced forward transferred to a carrier substrate serving as a recipient substrate, the laser-induced forward transfer method comprising:

[0074] The process of obtaining the reference position D and the arrangement spacing DP of the optical devices formed on the sapphire substrate;

[0075] The process of obtaining the reference position R and the arrangement spacing RP of the optical devices to be transferred onto the carrier substrate by laser-induced forward transfer;

[0076] Based on reference position D and reference position R, the sapphire substrate and the carrier substrate are made to face each other, and the position of one or both of the sapphire substrate and the carrier substrate is adjusted in such a way that the distance from the surface of the optical device to the carrier substrate is a specified value.

[0077] The scanning speed ratio VR of the sapphire substrate and the carrier substrate is calculated based on the arrangement spacing DP and arrangement spacing RP.

[0078] The process of irradiating multiple optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical device with laser.

[0079] Based on reference positions D and R, the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane are aligned, and the sapphire substrate and the carrier substrate are scanned at the stated scanning speed ratio VR; and

[0080] The process involves irradiating the laser in conjunction with the scanning action to induce a forward transfer.

[0081] (2) According to the laser-induced forward transfer method described in (1), wherein,

[0082] The arrangement spacing DP is composed of the arrangement spacing DX in the X direction and the arrangement spacing DY in the Y direction.

[0083] The arrangement spacing RP is composed of the arrangement spacing RX in the X direction and the arrangement spacing RY in the Y direction.

[0084] The scanning speed ratio VR is composed of the speed ratio VRX in the X direction calculated based on the arrangement spacing DX and RX, and the speed ratio VRY in the Y direction calculated based on the arrangement spacing DY and RY.

[0085] The laser-induced forward transfer method further includes the following steps: after laser-induced forward transfer at a speed ratio VRY, a carrier substrate is used as a donor substrate instead of a sapphire substrate, and is mounted by rotating it 90 degrees in the horizontal plane relative to the scanning direction, and then laser-induced forward transfer is performed to the second carrier substrate at a speed ratio VRX.

[0086] (3) According to the laser-induced forward transfer method described in (2), wherein,

[0087] The laser irradiation is a reduced projection using a photomask, the photomask having: a first opening, which corresponds to approximately one optical device in the Y direction and to two or more optical devices in the X direction at an arrangement spacing DX; and a second opening, which corresponds to approximately one optical device in the X direction and to two or more optical devices in the Y direction at an arrangement spacing RY.

[0088] The laser-induced forward transfer method further includes the following steps: when laser-induced forward transfer is performed at a speed ratio VRY, the mask is switched using a first opening, and when laser-induced forward transfer is performed at a speed ratio VRX, the mask is switched using a second opening.

[0089] (4) The laser-induced forward transfer method described in (3) wherein the opening of the photomask is a group of openings that irradiate each optical device in a roughly optical device shape.

[0090] (5) A laser-induced forward transfer device for laser-induced forward transfer of an optical device on a sapphire substrate serving as a donor substrate to a carrier substrate serving as a recipient substrate, the laser-induced forward transfer device comprising:

[0091] The first processing unit acquires the reference position D and the arrangement spacing DP of the optical devices formed on the sapphire substrate.

[0092] The second processing unit acquires the reference position R and the arrangement spacing RP of the optical devices that are planned to be transferred forward onto the carrier substrate by laser-induced transfer;

[0093] The platform and platform controller, based on reference position D and reference position R, make the sapphire substrate and the carrier substrate face each other, and adjust the position of either or both of the sapphire substrate and the carrier substrate in such a way that the distance from the surface of the optical device to the carrier substrate becomes a specified value.

[0094] The third processing unit calculates the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement pitch DP and the arrangement pitch RP.

[0095] A smaller projection optical system is used to irradiate multiple optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical devices.

[0096] The platform and platform controller, based on reference positions D and R, align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane, and cause the sapphire substrate and the carrier substrate to perform scanning operations at the stated scanning speed ratio VR; and

[0097] The laser device irradiates the laser in conjunction with the scanning action.

[0098] (6) A laser-induced forward transfer method for transferring micro-element on a sapphire substrate serving as a donor substrate to a recipient substrate having an adhesive layer via laser-induced forward transfer, the laser-induced forward transfer method comprising:

[0099] The process of obtaining the three-dimensional dimensions of the micro-elements arranged on the donor substrate, the reference position D of the arrangement, and the arrangement spacing DP; the process of obtaining the reference position R and the arrangement spacing RP of the micro-elements to be packaged on the recipient substrate by laser-induced forward transfer.

[0100] Based on reference positions D and R, the donor substrate and the acceptor substrate are brought face to face, and their substrate spacing is measured. The position of either or both of the donor and acceptor substrates is adjusted in such a manner that the distance from the lower surface of the micro-element to the acceptor substrate becomes a predetermined value.

[0101] To ensure the relative positions of the donor and recipient substrates are aligned in the horizontal plane, a process of laser reduction projection is performed from the back side of the donor substrate at the boundary between the donor substrate and the micro-device.

[0102] The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2J / cm 2 ,

[0103] The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2kg / m 3 ,

[0104] The adhesive layer has a hardness of 20-50 and a thickness of 5μm or more.

[0105] The specified value is 10μm to 200μm.

[0106] (7) A laser-induced forward transfer method, wherein an optical device on a donor substrate is laser-induced to be forward transferred to a recipient substrate, wherein the laser-induced forward transfer method comprises...

[0107] The donor substrate and the acceptor substrate face each other, and a gap is formed between the surface of the optical device and the acceptor substrate.

[0108] The adjacent optical devices on the donor substrate, which are arranged at a specified interval, are laser-induced forward transfer toward the carrier substrate while the interval is changed to a different interval from the specified interval.

[0109] (8) The laser-induced forward transfer method described in (7), wherein the interval of the conversion is in the X direction, i.e., the short axis direction of the optical device.

[0110] (9) The laser-induced forward transfer method described in (7) wherein the interval of the conversion is in the Y direction, i.e., the long axis direction of the optical device.

[0111] (10) The laser-induced forward transfer method described in any one of (7) to (9), wherein the gap is 10 μm to 200 μm.

[0112] (11) The laser-induced forward transfer method according to any one of (7) to (10), wherein the laser-induced forward transfer is performed while the donor substrate or the recipient substrate is being scanned.

[0113] (12) The laser-induced forward transfer method described in any one of (7) to (11), wherein the optical device is a laser diode or a photodiode.

[0114] (13) The laser-induced forward transfer method described in any one of (7) to (11), wherein the optical device is an LED or a micro LED.

[0115] (14) A method for manufacturing a receiver substrate with a transferred optical device, wherein the optical device on a donor substrate is laser-induced to be transferred forward to a receiver substrate, wherein the method for manufacturing the receiver substrate with the transferred optical device...

[0116] The donor substrate and the acceptor substrate face each other, and a gap is formed between the surface of the optical device and the acceptor substrate.

[0117] The adjacent optical devices on the donor substrate, which are arranged at a specified interval, are laser-induced forward transfer toward the carrier substrate while the interval is changed to a different interval from the specified interval.

[0118] (15) The method for manufacturing a receiver substrate with an optical device as described in (14), wherein the interval of the conversion is in the X direction, i.e., the short axis direction of the optical device.

[0119] (16) The method for manufacturing a receiver substrate with an optical device as described in (14), wherein the interval of the conversion is in the Y direction, i.e., the long axis direction of the optical device.

[0120] (17) A method for manufacturing a receiver substrate with an optical device disposed thereon as described in any one of (14) to (16), wherein the gap is 10 μm to 200 μm.

[0121] (18) A method for manufacturing a receiver substrate with an optical device as described in any one of (14) to (17), wherein laser-induced forward transfer is performed while the donor substrate or the receiver substrate is being scanned.

[0122] (19) A method for manufacturing a receiver substrate with an optical device disposed thereon as described in any one of (14) to (18), wherein the optical device is a laser diode or a photodiode.

[0123] (20) A method for manufacturing a receiver substrate with an optical device disposed thereon as described in any one of (14) to (18), wherein the optical device is an LED or a micro LED.

[0124] (21) A method of manufacturing a display, wherein an optical device on a receiver substrate obtained by a method of manufacturing a receiver substrate on which an optical device is disposed, as described in any one of (14) to (19), is packaged on another substrate.

[0125] (22) The method of manufacturing a display as described in (21), wherein the encapsulation is an encapsulation using an imprinting method.

[0126] (23) A laser-induced forward transfer method for transferring an optical device on a donor substrate to a recipient substrate using laser-induced forward transfer, the laser-induced forward transfer method comprising:

[0127] A process for obtaining the arrangement spacing DP of an arrangement of optical devices formed on a donor substrate;

[0128] A process of adjusting the position of one or both of the donor substrate and the acceptor substrate so that the distance from the surface of the optical device to the acceptor substrate is a specified value.

[0129] The process of calculating the scanning speed ratio VR of the donor substrate and the recipient substrate based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by laser-induced transfer.

[0130] The process of irradiating multiple optical devices arranged in a row from the back side of the donor substrate at the boundary between the donor substrate and the optical device.

[0131] The process of scanning the donor substrate and the recipient substrate at the stated scanning speed ratio VR; and

[0132] The process involves irradiating the laser in conjunction with the scanning action to induce a forward transfer.

[0133] (24) A laser-induced forward transfer device for laser-induced forward transfer of an optical device on a donor substrate to a receiver substrate, the laser-induced forward transfer device comprising:

[0134] A mechanism for obtaining the arrangement spacing DP of an arrangement of optical devices formed on a donor substrate;

[0135] A mechanism for adjusting the position of one or both of the donor and receiver substrates so that the donor substrate and the receiver substrate face each other and the distance from the surface of the optical device to the receiver substrate is a predetermined value.

[0136] The mechanism for calculating the scanning speed ratio VR of the donor substrate and the recipient substrate is based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by laser-induced transfer.

[0137] The projection optical system is scaled down, and laser light is irradiated from the back side of the donor substrate onto multiple optical devices arranged in a row at the boundary between the donor substrate and the optical devices.

[0138] A mechanism for scanning the donor substrate and the recipient substrate at the stated scanning speed ratio VR; and

[0139] The laser device irradiates the laser in conjunction with the scanning action.

[0140] (25) A laser-induced forward transfer method for transferring a micro-element on a donor substrate to a recipient substrate having an adhesive layer via laser-induced forward transfer, the laser-induced forward transfer method comprising:

[0141] A process of adjusting the position of one or both of the donor and recipient substrates so that the distance from the lower surface of the micro-element to the recipient substrate is a predetermined value, with the donor substrate and recipient substrate facing each other; and

[0142] At the boundary between the donor substrate and the micro-device, a process of laser reduction projection is performed from the back side of the donor substrate, and

[0143] The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2J / cm 2 ,

[0144] The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2kg / m 3 ,

[0145] The adhesive layer has a hardness of 20-50 and a thickness of 5μm or more.

[0146] The specified value is 10μm to 200μm.

[0147] Furthermore, if the present invention is further presented from different viewpoints, it becomes as described below (U1) to (U25).

[0148] (U1) A laser-induced forward transfer system for laser-induced forward transfer of an optical device on a sapphire substrate (as a donor substrate) to a carrier substrate (as a recipient substrate), and comprising:

[0149] A mechanism for obtaining the reference position D and the arrangement spacing DP of optical devices formed on a sapphire substrate;

[0150] A mechanism for obtaining the reference position R and the arrangement spacing RP of the optical devices to be transferred forward onto the carrier substrate by laser-induced forward transfer;

[0151] Based on reference positions D and R, a mechanism is used to adjust the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value.

[0152] The mechanism for calculating the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement spacing DP and arrangement spacing RP.

[0153] A mechanism for irradiating laser light onto multiple optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical device.

[0154] A mechanism that aligns the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on reference positions D and R, and enables the sapphire substrate and the carrier substrate to perform scanning operations at the stated scanning speed ratio VR; and

[0155] A mechanism that irradiates a laser in conjunction with a scanning action to induce a forward transfer.

[0156] (U2) According to the laser-induced forward transfer system described in (U1), the arrangement spacing DP is composed of the arrangement spacing DX in the X direction and the arrangement spacing DY in the Y direction.

[0157] The arrangement spacing RP is composed of the arrangement spacing RX in the X direction and the arrangement spacing RY in the Y direction.

[0158] The scanning speed ratio VR is composed of the speed ratio VRX in the X direction calculated based on the arrangement spacing DX and RX, and the speed ratio VRY in the Y direction calculated based on the arrangement spacing DY and RY.

[0159] The laser-induced forward transfer system also includes the following mechanism:

[0160] After laser-induced forward transfer at a speed ratio of VRY, a carrier substrate is used as a donor substrate instead of a sapphire substrate. The carrier substrate is rotated 90 degrees in the horizontal plane relative to the scanning direction and mounted. Laser-induced forward transfer is then performed on the second carrier substrate at a speed ratio of VRX.

[0161] (U3) According to the laser-induced forward transfer system described in (U2), the laser irradiation is a reduced projection using a photomask, the photomask having: a first opening corresponding to approximately one optical device in the Y direction and corresponding to two or more optical devices at an arrangement spacing DX in the X direction; and a second opening corresponding to approximately one optical device in the X direction and corresponding to two or more optical devices at an arrangement spacing RY in the Y direction.

[0162] The laser-induced forward transfer system also includes the following mechanisms:

[0163] When laser-induced forward transfer is performed at a speed ratio VRY, the mask is switched using a first opening; and when laser-induced forward transfer is performed at a speed ratio VRX, the mask is switched using a second opening.

[0164] (U4) According to the laser-induced forward transfer system described in (U3), the openings of the photomask are a group of openings that irradiate each optical device in a shape approximately that of the optical device.

[0165] (U5) A laser-induced forward transfer device, wherein a donor substrate is disposed in the laser-induced forward transfer device, the laser-induced forward transfer device performing laser-induced forward transfer of an optical device on a sapphire substrate serving as the donor substrate to a carrier substrate serving as the recipient substrate, and the laser-induced forward transfer device comprises:

[0166] The first processing unit acquires the reference position D and the arrangement spacing DP of the optical devices formed on the sapphire substrate.

[0167] The second processing unit acquires the reference position R and the arrangement spacing RP of the optical devices that are planned to be transferred forward onto the carrier substrate by laser-induced transfer;

[0168] The platform and platform controller, based on reference position D and reference position R, make the sapphire substrate and the carrier substrate face each other, and adjust the position of either or both of the sapphire substrate and the carrier substrate in such a way that the distance from the surface of the optical device to the carrier substrate is a specified value.

[0169] The third processing unit calculates the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement pitch DP and the arrangement pitch RP.

[0170] A smaller projection optical system is used to irradiate multiple optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical devices.

[0171] The platform and platform controller, based on reference positions D and R, align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane, and cause the sapphire substrate and the carrier substrate to perform scanning operations at the stated scanning speed ratio VR; and

[0172] The laser device irradiates the laser in conjunction with the scanning action.

[0173] (U6) A laser-induced forward transfer system for laser-induced forward transfer of micro-element on a sapphire substrate serving as a donor substrate to a recipient substrate having an adhesive layer, and the system comprising:

[0174] A mechanism for obtaining the three-dimensional dimensions of micro-elements arranged on a donor substrate, the reference position D of the arrangement, and the arrangement spacing DP;

[0175] A mechanism for obtaining the reference position R and the arrangement spacing RP of the arrangement of the micro-elements packaged on the receptor substrate by laser-induced forward transfer;

[0176] A mechanism for adjusting the position of either or both of the donor and recipient substrates, based on reference positions D and R, by positioning the donor and recipient substrates facing each other and measuring their substrate spacing, so that the distance from the lower surface of the micro-element to the recipient substrate becomes a predetermined value; and

[0177] A mechanism that aligns the relative positions of the donor and recipient substrates in the horizontal plane, and projects a reduced laser beam from the back side of the donor substrate at the boundary between the donor substrate and the micro-element.

[0178] The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2J / cm 2 ,

[0179] The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2kg / m 3 ,

[0180] The adhesive layer has a hardness of 20-50 and a thickness of 5μm or more.

[0181] The specified value is 10μm to 200μm.

[0182] (U7) A laser-induced forward transfer system for laser-induced forward transfer of optical devices on a donor substrate to a recipient substrate, and

[0183] The donor substrate and the acceptor substrate face each other, and a gap is formed between the surface of the optical device and the acceptor substrate.

[0184] The laser-induced forward transfer system includes the following mechanism: laser-induced forward transfer of adjacent optical devices on a donor substrate arranged at predetermined intervals to a carrier substrate while converting the intervals to be different from the predetermined intervals.

[0185] (U8) The laser-induced forward transfer system described in (U7) wherein the interval of the conversion is in the X direction, i.e., the short axis direction of the optical device.

[0186] (U9) The laser-induced forward transfer system described in (U7) wherein the interval of the conversion is in the Y direction, i.e., the long axis direction of the optical device.

[0187] (U10) The laser-induced forward transfer system described in any one of (U7) to (U9), wherein the gap is 10 μm to 200 μm.

[0188] (U11) The laser-induced forward transfer system according to any one of (U7) to (U10), wherein laser-induced forward transfer is performed while the donor substrate or the recipient substrate is being scanned.

[0189] (U12) The laser-induced forward transfer system according to any one of (U7) to (U11), wherein the optical device is a laser diode or a photodiode.

[0190] (U13) The laser-induced forward transfer system according to any one of (U7) to (U11), wherein the optical device is an LED or a micro-LED.

[0191] (U14) A manufacturing system for a acceptor substrate with an optical device, wherein the optical device on a donor substrate is laser-induced to be transferred forward to the acceptor substrate, and

[0192] The donor substrate and the acceptor substrate face each other, and a gap is formed between the surface of the optical device and the acceptor substrate.

[0193] The manufacturing system for the recipient substrate with the optical devices includes a mechanism that laser-induced forward transfer of adjacent optical devices on a donor substrate arranged at predetermined intervals to a carrier substrate while converting the intervals to a different intervals.

[0194] (U15) The manufacturing system of the receiver substrate with the optical device moved as described in (U14), wherein the interval of the conversion is in the X direction, that is, the short axis direction of the optical device.

[0195] (U16) The manufacturing system of the receiver substrate with the optical device moved as described in (U14), wherein the interval of the conversion is in the Y direction, that is, the long axis direction of the optical device.

[0196] (U17) A manufacturing system for a receiver substrate with an optical device disposed according to any one of (U14) to (U16), wherein the gap is 10 μm to 200 μm.

[0197] (U18) A manufacturing system for a receiver substrate with an optical device as described in any one of (U14) to (U17), wherein laser-induced forward transfer is performed while the donor substrate or the receiver substrate is being scanned.

[0198] (U19) A manufacturing system for a receiver substrate with an optical device disposed thereon, as described in any one of (U14) to (U18), wherein the optical device is a laser diode or a photodiode.

[0199] (U20) A manufacturing system for a receiver substrate with an optical device disposed thereon, as described in any one of (U14) to (U18), wherein the optical device is an LED or a microLED.

[0200] (U21) A display manufacturing system comprising the following mechanisms:

[0201] The optical device on the receiver substrate obtained by the manufacturing system of the receiver substrate with the optical device described in any one of (U14) to (U19) is packaged on another substrate.

[0202] (U22) The manufacturing system of the display as described in (U21), wherein the package is a package using an imprinting method.

[0203] (U23) A laser-induced forward transfer system for laser-induced forward transfer of optical devices on a donor substrate to a recipient substrate, and comprising the following mechanisms:

[0204] Obtain the arrangement spacing DP of the optical devices formed on the donor substrate;

[0205] The donor substrate and the acceptor substrate are facing each other, and the position of one or both of the donor substrate and the acceptor substrate is adjusted in such a way that the distance from the surface of the optical device to the acceptor substrate is a specified value.

[0206] The scanning speed ratio VR of the donor substrate and the recipient substrate is calculated based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by laser-induced transfer.

[0207] At the boundary between the donor substrate and the optical device, a laser is irradiated from the back side of the donor substrate onto a row of optical devices.

[0208] VR causes the donor substrate and the recipient substrate to perform a scanning motion at the stated speed ratio; and

[0209] The laser is irradiated in conjunction with the scanning action to induce a forward transfer.

[0210] (U24) A laser-induced forward transfer device, wherein a donor substrate is disposed in the laser-induced forward transfer device, the laser-induced forward transfer device transfers optical devices on the donor substrate to a recipient substrate in a laser-induced manner, and the laser-induced forward transfer device comprises:

[0211] A mechanism for obtaining the arrangement spacing DP of an arrangement of optical devices formed on a donor substrate;

[0212] A mechanism for adjusting the position of one or both of the donor and receiver substrates so that the donor substrate and the receiver substrate face each other and the distance from the surface of the optical device to the receiver substrate is a predetermined value.

[0213] The mechanism for calculating the scanning speed ratio VR of the donor substrate and the recipient substrate is based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by laser-induced transfer.

[0214] The projection optical system is scaled down, and laser light is irradiated from the back side of the donor substrate onto multiple optical devices arranged in a row at the boundary between the donor substrate and the optical devices.

[0215] The donor substrate and the recipient substrate are scanned at the stated scan speed ratio VR; and

[0216] The laser device irradiates the laser in conjunction with the scanning action.

[0217] (U25) A laser-induced forward transfer system for laser-induced forward transfer of micro-components on a donor substrate to a recipient substrate having an adhesive layer, and comprising the following mechanisms:

[0218] The donor substrate and the acceptor substrate are facing each other, and the position of either or both of the donor substrate and the acceptor substrate is adjusted in such a way that the distance from the lower surface of the micro-element to the acceptor substrate is a predetermined value; and

[0219] At the boundary between the donor substrate and the micro-device, a reduced projection of the laser is made from the back side of the donor substrate, and

[0220] The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2J / cm 2 ,

[0221] The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2kg / m 3 ,

[0222] The adhesive layer has a hardness of 20-50 and a thickness of 5μm or more.

[0223] The specified value is 10μm to 200μm.

[0224] Moreover, regarding various institutions, each institution may have its own function, or one institution may have multiple functions.

[0225] Industrial availability

[0226] This invention can be used as part of the manufacturing process of micro-LED displays. Furthermore, it can be used to increase the configuration freedom of GaN-based laser diodes in the manufacturing processes of VCSELs (Vertical-Cavity Surface-Emitting Lasers), projection displays, and laser projectors. Moreover, it can be used to increase the configuration freedom of GaN-based photodiodes in the manufacturing process of flat panel sensors.

Claims

1. A laser-induced forward transfer method, characterized in that, The optical device on a sapphire substrate serving as a donor substrate is laser-induced forwardly transferred to a carrier substrate serving as a recipient substrate, wherein the recipient substrate has an adhesive layer. The laser-induced forward transfer method includes: The process of obtaining the reference position D and the arrangement spacing DP of the optical devices formed on the sapphire substrate; The process of obtaining the reference position R and the arrangement spacing RP of the optical devices that are planned to be transferred forward onto the carrier substrate by the laser-induced transfer; Based on the reference position D and the reference position R, the sapphire substrate and the carrier substrate are facing each other, and the position of either or both of the sapphire substrate and the carrier substrate is adjusted in such a way that the distance from the surface of the optical device to the carrier substrate is a predetermined value. The process of calculating the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement spacing DP and the arrangement spacing RP; The process of irradiating a plurality of optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical device. Based on the reference position D and the reference position R, the sapphire substrate and the carrier substrate are aligned in the horizontal plane, and the sapphire substrate and the carrier substrate are scanned at the scanning speed ratio VR; and The laser is irradiated in conjunction with the scanning action to perform the laser-induced forward transfer process. The laser irradiation is a reduced projection using a photomask, and the optical device is a gallium nitride-based semiconductor light-emitting diode formed on the sapphire substrate. The photomask has a light-blocking part and a group of openings corresponding to each of the multiple optical devices arranged in a row. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

2. The laser-induced forward transfer method according to claim 1, characterized in that, The arrangement spacing DP is composed of the arrangement spacing DX in the X direction and the arrangement spacing DY in the Y direction. The arrangement spacing RP is composed of the arrangement spacing RX in the X direction and the arrangement spacing RY in the Y direction. The scanning speed ratio VR is composed of the speed ratio VRX in the X direction calculated based on the arrangement spacing DX and the arrangement spacing RX, and the speed ratio VRY in the Y direction calculated based on the arrangement spacing DY and the arrangement spacing RY. The laser-induced forward transfer method further includes the following steps: after performing the laser-induced forward transfer at the speed ratio VRY, the carrier substrate is used as the donor substrate instead of the sapphire substrate, and is mounted by rotating it 90 degrees in the horizontal plane relative to the scanning direction, and then performing the laser-induced forward transfer to the second carrier substrate at the speed ratio VRX.

3. The laser-induced forward transfer method according to claim 2, characterized in that, The laser irradiation is a reduced projection using a photomask, which has: a first opening, which corresponds to one optical device in the Y direction and to two or more optical devices in the X direction at the arrangement spacing DX; And a second opening, which corresponds to one optical device in the X direction and to two or more optical devices in the Y direction at the arrangement spacing RY. The laser-induced forward transfer method further includes the following steps: when performing the laser-induced forward transfer at the speed ratio VRY, switching the mask using the first opening, and when performing the laser-induced forward transfer at the speed ratio VRX, switching the mask using the second opening.

4. The laser-induced forward transfer method according to claim 3, characterized in that, The openings of the photomask are a group of openings that illuminate each optical device in the shape of the optical device.

5. A laser-induced forward transfer device, characterized in that, The laser-induced forward transfer device comprises: an optical device on a sapphire substrate serving as a donor substrate and a carrier substrate serving as a recipient substrate, wherein the recipient substrate has an adhesive layer; and the laser-induced forward transfer device includes: The first processing unit acquires the reference position D and the arrangement spacing DP of the optical devices formed on the sapphire substrate. The second processing unit acquires the reference position R and the arrangement spacing RP of the optical devices that are planned to be transferred forward onto the carrier substrate by the laser-induced transfer. The platform and platform controller, based on the reference position D and the reference position R, make the sapphire substrate face the carrier substrate, and adjust the position of either or both of the sapphire substrate and the carrier substrate in such a way that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value. The third processing unit calculates the scanning speed ratio VR of the sapphire substrate and the carrier substrate based on the arrangement spacing DP and the arrangement spacing RP. A reduced projection optical system is used to irradiate a plurality of optical devices arranged in a row from the back side of the sapphire substrate at the boundary between the sapphire substrate and the optical device. The platform and platform controller, based on the reference position D and the reference position R, align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane, and cause the sapphire substrate and the carrier substrate to perform scanning operations at the scanning speed ratio VR; and The laser device, in conjunction with the scanning action, irradiates with laser light. The laser irradiation is a reduced projection using a photomask, and the optical device is a gallium nitride-based semiconductor light-emitting diode formed on the sapphire substrate. The photomask has a light-blocking part and a group of openings corresponding to each of the multiple optical devices arranged in a row. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

6. A laser-induced forward transfer method, characterized in that, Laser-induced forward transfer of micro-components on a sapphire substrate serving as a donor substrate to a acceptor substrate having an adhesive layer, the laser-induced forward transfer method comprising: The process of obtaining the three-dimensional dimensions of the micro-elements arranged on the donor substrate, the reference position D of the arrangement, and the arrangement spacing DP; the process of obtaining the reference position R and the arrangement spacing RP of the micro-elements to be encapsulated on the recipient substrate by the laser-induced forward transfer. Based on the reference position D and the reference position R, the donor substrate and the recipient substrate are facing each other, and their substrate spacing is measured. The position of either or both of the donor substrate and the recipient substrate is adjusted in such a way that the distance from the lower surface of the micro-element to the recipient substrate becomes a predetermined value. The donor substrate and the recipient substrate are aligned in the horizontal plane. At the boundary between the donor substrate and the micro-element, a process is performed from the back side of the donor substrate to project a reduced laser beam using a photomask. The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2 J / cm 2 , The density of the gas environment filling the space between the substrates is 1 kg / m³. 3 ~2 kg / m 3 , The adhesive layer has a hardness of 20–50 and a thickness of 5 μm or more. The specified value is 10 μm to 200 μm. The micro-element is a gallium nitride-based semiconductor light-emitting diode formed on the donor substrate. The photomask has a light-blocking part and a group of openings, wherein the group of openings is a row of openings corresponding to each micro-element. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

7. A laser-induced forward transfer method, comprising laser-induced forward transfer of an optical device on a donor substrate to a recipient substrate by irradiation with a laser, wherein the recipient substrate has an adhesive layer, the laser-induced forward transfer method being characterized in that... The donor substrate and the acceptor substrate are positioned facing each other, and a gap is formed between the surface of the optical device and the acceptor substrate. The adjacent optical devices on the donor substrate, arranged at predetermined intervals, are laser-induced forwardly transferred toward the carrier substrate while their intervals are changed to a different interval from the predetermined intervals. The laser irradiation is performed using a photomask to reduce the projection size, and it has the characteristic of causing damage to the adhesive layer. The photomask has a light-shielding part and a group of openings, wherein the group of openings is a row of openings corresponding to each optical device. The light-shielding part is used to block the laser from irradiating the adhesive layer. The donor substrate is a sapphire substrate. The optical device is a micro light-emitting diode, and it is formed in a matrix on the donor substrate.

8. The laser-induced forward transfer method according to claim 7, characterized in that, The interval of the conversion is in the X direction, which is the short axis direction of the optical device.

9. The laser-induced forward transfer method according to claim 7, characterized in that, The interval of the conversion is in the Y direction, which is the long axis direction of the optical device.

10. The laser-induced forward transfer method according to claim 7, characterized in that, The gap is 10 μm to 200 μm.

11. The laser-induced forward transfer method according to claim 7, characterized in that, The laser-induced forward transfer is performed while the donor substrate or the recipient substrate is being scanned.

12. The laser-induced forward transfer method according to claim 7, characterized in that, A KrF excimer laser is irradiated onto the optical device from the back side of the donor substrate.

13. The laser-induced forward transfer method according to claim 7, characterized in that, A pulsed laser is irradiated onto the optical device from the back side of the donor substrate.

14. The laser-induced forward transfer method according to claim 7, characterized in that, The optical device is a gallium nitride-based semiconductor micro-light-emitting diode.

15. The laser-induced forward transfer method according to claim 14, characterized in that, The energy density of the light irradiated from the back side of the donor substrate onto the optical device is 0.5 J / cm². 2 ~2 J / cm 2 The laser.

16. A method for manufacturing a acceptor substrate with an optical device transferred thereon, comprising laser-induced forward transfer of an optical device on a donor substrate to the acceptor substrate, wherein the acceptor substrate has an adhesive layer, characterized in that... The donor substrate and the acceptor substrate are positioned facing each other, and a gap is formed between the surface of the optical device and the acceptor substrate. The adjacent optical devices on the donor substrate, arranged at predetermined intervals, are laser-induced forwardly transferred toward the carrier substrate while their intervals are changed to a different interval from the predetermined intervals. In the laser-induced forward transfer, the laser is projected in a reduced form using a photomask. The donor substrate is a sapphire substrate, and the optical device is a gallium nitride-based semiconductor light-emitting diode formed in a matrix on the donor substrate. The photomask has a light-shielding part and a group of openings, wherein the group of openings is a row of openings corresponding to each optical device. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

17. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, The interval of the conversion is in the X direction, which is the short axis direction of the optical device.

18. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, The interval of the conversion is in the Y direction, which is the long axis direction of the optical device.

19. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, The gap is 10 μm to 200 μm.

20. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, The laser-induced forward transfer is performed while the donor substrate or the recipient substrate is being scanned.

21. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, A KrF excimer laser is irradiated onto the optical device from the back side of the donor substrate.

22. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, A pulsed laser is irradiated onto the optical device from the back side of the donor substrate.

23. The method for manufacturing a receiver substrate with an optical device disposed thereon according to claim 16, characterized in that, The energy density of the light irradiated from the back side of the donor substrate onto the optical device is 0.5 J / cm². 2 ~2 J / cm 2 The laser.

24. A method for manufacturing a display, characterized in that, The optical device on the receiver substrate obtained by the manufacturing method of the receiver substrate on which the optical device is transferred as described in any one of claims 16 to 23 is packaged on another substrate.

25. The method for manufacturing a display according to claim 24, characterized in that, The encapsulation is an encapsulation using an embossing method.

26. A laser-induced forward transfer method, characterized in that, Laser-induced forward transfer of an optical device on a donor substrate to a receiver substrate, wherein the receiver substrate has an adhesive layer, the laser-induced forward transfer method includes: A process for obtaining the arrangement spacing DP of the optical devices formed on the donor substrate; A process of adjusting the position of either or both of the donor substrate and the recipient substrate so that the distance from the surface of the optical device to the recipient substrate is a predetermined value. The process of calculating the scanning speed ratio VR of the donor substrate and the recipient substrate based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by the laser-induced transfer. A process of irradiating a plurality of optical devices arranged in a row from the back side of the donor substrate at the boundary between the donor substrate and the optical device. The process of performing a scanning operation between the donor substrate and the recipient substrate at the scan speed ratio VR; and The process involves irradiating the laser in conjunction with the scanning action to induce a forward transfer. In the laser-induced forward transfer, the laser is projected in a reduced size using a photomask. The optical device is a gallium nitride-based semiconductor light-emitting diode formed on the donor substrate. The photomask has a light-blocking part and a group of openings corresponding to each of the multiple optical devices arranged in a row. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

27. A laser-induced forward transfer device, characterized in that, The laser-induced forward transfer device comprises: a donor substrate having an adhesive layer, and a donor substrate having an adhesive layer. A mechanism for obtaining the arrangement spacing DP of the optical devices formed on the donor substrate; A mechanism for adjusting the position of either or both of the donor substrate and the receiver substrate such that the donor substrate faces the receiver substrate and the distance from the surface of the optical device to the receiver substrate is a predetermined value. The mechanism for calculating the scanning speed ratio VR of the donor substrate and the recipient substrate is based on the arrangement spacing DP and the arrangement spacing RP of the optical devices to be transferred forward to the recipient substrate by the laser-induced transfer. A reduced projection optical system is used to irradiate a plurality of optical devices arranged in a row from the back side of the donor substrate at the boundary between the donor substrate and the optical device. A mechanism for scanning the donor substrate and the recipient substrate at the scan speed ratio VR; and The laser device, in conjunction with the scanning action, irradiates with laser light. The laser irradiation is a reduced projection using a photomask, and the optical device is a gallium nitride-based semiconductor light-emitting diode formed on the donor substrate. The photomask has a light-blocking part and a group of openings corresponding to each of the multiple optical devices arranged in a row. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

28. A laser-induced forward transfer method, characterized in that, Laser-induced forward transfer of micro-components from a donor substrate to a recipient substrate having an adhesive layer is performed. The recipient substrate has an adhesive layer. The laser-induced forward transfer method includes: A process of adjusting the position of either or both of the donor substrate and the recipient substrate so that the distance from the lower surface of the micro-element to the recipient substrate is a predetermined value, with the donor substrate facing the recipient substrate; and At the boundary between the donor substrate and the micro-element, a process of reducing the laser projection is performed from the back side of the donor substrate, and The laser used for the reduced projection is a KrF excimer laser with an irradiation energy density of 0.5 J / cm². 2 ~2 J / cm 2 , The density of the gas environment filling the space between the donor substrate and the acceptor substrate is 1 kg / m³. 3 ~2 kg / m 3 , The adhesive layer has a hardness of 20–50 and a thickness of 5 μm or more. The specified value is 10 μm to 200 μm. The laser irradiation is a reduced projection using a photomask; the donor substrate is a sapphire substrate; and the micro-element is a gallium nitride-based semiconductor light-emitting diode formed in a matrix on the donor substrate. The photomask has a light-blocking part and a group of openings, wherein the group of openings is a row of openings corresponding to each micro-element. The laser irradiation has the characteristic of causing damage to the adhesive layer. The light-shielding part is used to block the laser from irradiating the adhesive layer.

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