Method for using dual-frequency RF power in a processing chamber
The dual-frequency RF power system in the substrate processing chamber addresses the challenge of depositing thick hard masks with high selectivity and quality, enhancing semiconductor manufacturing efficiency by eliminating intermediate cleaning steps and improving film consistency.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-09-16
- Publication Date
- 2026-05-19
AI Technical Summary
Conventional hard mask materials lack desirable etching selectivity and are difficult to deposit thick layers efficiently, leading to throughput limitations and quality issues in semiconductor manufacturing.
A substrate processing chamber utilizing dual-frequency RF power, with a first frequency of 40 MHz to 60 MHz supplied to the chamber lid and a second frequency of 10 MHz to 20 MHz supplied to substrate support electrodes, enables single-shot deposition of high-quality hard masks on substrates and chamber components, improving film quality and reducing defects.
The dual-frequency RF power system allows for the deposition of thick, defect-free hard masks with improved film quality, reducing the need for intermediate cleaning steps and enhancing manufacturing throughput and yield.
Smart Images
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Abstract
Description
Technical Field
[0001]
[0001] Embodiments of the present disclosure generally relate to apparatuses and methods used in the manufacture of semiconductor devices. More specifically, embodiments of the present disclosure relate to a substrate processing chamber for forming semiconductor devices and its components.
Background Art
[0002] Description of Related Art
[0002] Integrated circuits have evolved into complex devices that can house millions of transistors, capacitors, and resistors on a single chip. The evolution of chip design continuously requires faster circuits and higher circuit densities. The demand for faster circuits with higher circuit densities also places similar demands on the materials used in the manufacture of such integrated circuits. In particular, as the dimensions of integrated circuit components shrink to the sub-micron level, there is a tendency to use low-resistivity conductive materials and low-dielectric-constant insulating materials to obtain appropriate electrical performance from those components.
[0003]
[0003] The demand for higher integrated circuit densities also imposes requirements on the processing sequences used to manufacture integrated circuit components. For example, in a processing sequence using conventional photolithography techniques, a layer of energy-sensitive resist is formed on a stack of material layers placed on a substrate. This energy-sensitive resist layer is exposed to an image of a pattern to form a photoresist mask. The mask pattern is then transferred to one or more of the material layers in the stack using an etching process. The chemical etchant used in this etching process is selected to have higher etching selectivity for the material layers in the stack than for the energy-sensitive resist mask. That is, the chemical etchant etches one or more layers of the material stack at a much faster rate than the energy-sensitive resist. The etching selectivity for one or more material layers in the stack on the resist prevents the energy-sensitive resist from being consumed before the pattern transfer is complete.
[0004]
[0004] As the pattern dimensions decrease, the thickness of the energy-sensitive resist also decreases accordingly to control the pattern resolution. Such thin resist layers may be insufficient to mask the underlying material layer during pattern transfer due to attack by chemical etchants. An intermediate layer called a hard mask (e.g., silicon oxynitride, silicon carbide, or carbon film) is often used between the energy-sensitive resist layer and the underlying material layer and facilitates pattern transfer because it is more resistant to chemical etchants. Hard mask materials with high etching selectivity and fast deposition rates are often used. Due to the decreasing critical dimension (CD), existing hard mask materials lack desirable etching selectivity compared to the underlying material (e.g., oxides and nitrides) and are often difficult to deposit. To produce thicker hard masks with good film properties, layers are deposited using multiple iterations with cleaning between each deposition. Such processing limits throughput and hard mask quality. Therefore, in this field, there is a need for improved methods and systems for forming thicker hard masks in single-shot deposition in order to improve throughput. [Overview of the project]
[0005]
[0005] Embodiments of the present disclosure generally relate to systems and methods used in the manufacture of semiconductor devices. More specifically, embodiments of the present disclosure relate to a substrate processing chamber for forming a hard mask used in a semiconductor device, and its components.
[0006]
[0006] In one embodiment, the method includes introducing a gas into the processing space of a chamber. A first radio frequency (RF) power having a first frequency of about 40 MHz or higher is supplied to the lid of the chamber. A second RF power having a second frequency is supplied to bias electrodes placed on a substrate support in the processing space. The second frequency is about 10 MHz to about 20 MHz.
[0007]
[0007] In another embodiment, a method for cleaning the chamber includes introducing a gas into the processing space of the chamber. A first radio frequency (RF) power having a first frequency of about 40 MHz or higher is supplied to the lid of the chamber. A second RF power having a second frequency is supplied to electrodes arranged on a substrate support in the processing space. The second frequency is about 10 MHz to about 20 MHz. At least a portion of the film arranged on the surface of the chamber components of the chamber is removed.
[0008]
[0008] In another embodiment, the method for processing the substrate includes introducing a gas into the processing space of the chamber. A first radio frequency (RF) power having a first frequency of about 40 MHz to about 60 MHz is supplied to the lid of the chamber. A second RF power having a second frequency, where the second frequency is about 10 MHz to about 20 MHz, is supplied to electrodes placed on the substrate support in the processing space. A film having a thickness of about 5 kÅ to about 3 μm is deposited on the substrate, which is placed on at least one surface of the substrate support and the chamber components.
[0009]
[0009] To allow for a more detailed understanding of the above-described features of the Disclosure, a more specific description of the Disclosure outlined above can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of the Disclosure, as the Disclosure may also permit other equally valid embodiments, and therefore should not be considered to limit the scope of the Disclosure. [Brief explanation of the drawing]
[0010] [Figure 1] This is a schematic side cross-sectional view of an exemplary processing chamber according to one embodiment. [Figure 2] This is a schematic cross-sectional view of a substrate support according to one embodiment. [Figure 3A] This is an enlarged schematic cross-sectional view of a lid having an angled channel according to one embodiment. [Figure 3B]This is an enlarged schematic cross-sectional view of a lid having a vertical channel according to one embodiment. [Figure 4] This is a flowchart of a substrate processing method according to one embodiment. [Modes for carrying out the invention]
[0011]
[0015] For ease of understanding, the same reference numerals were used to indicate identical elements common to the figures where possible. Elements and features of one embodiment are considered to be usefully incorporated into other embodiments without further description.
[0012]
[0016] Embodiments of this disclosure relate to substrate processing chambers used for substrate processing in the manufacture of electronic devices. Substrate processing includes deposition processes, including low-pressure processing, plasma processing, and thermal processing, used to manufacture electronic devices on substrates. An example of a processing chamber and / or system that may be adapted to benefit from exemplary embodiments of this disclosure is the PIONEER® PECVD system, commercially available from Applied Materials, Inc. in Santa Clara, California. Other processing chambers and / or processing platforms, including those from other manufacturers, are intended to be adapted to benefit from embodiments of this disclosure.
[0013]
[0017] Figure 1 is a schematic side cross-sectional view of an exemplary processing chamber 100 suitable for deposition processing. In one embodiment, which can be combined with other embodiments described herein, the processing chamber 100 may be configured to deposit an advanced patterning film on a substrate such as a hard mask film, for example, an amorphous carbon hard mask film.
[0014]
[0018] The processing chamber 100 includes a lid 125, a spacer 110 positioned on the chamber body 192, a substrate support 115, and a variable pressure system 120. In Figure 1, the lid 125 is depicted as flat, but in some embodiments that can be combined with other embodiments described herein, the lid 125 is dome-shaped.
[0015]
[0019] The lid 125 is connected to a first processing gas source 140. The first processing gas source 140 contains a precursor gas for forming a film on a substrate 145 supported on a substrate support 115. In one embodiment, the first processing gas source 140 contains precursor gases such as a carbon-containing gas, a hydrogen-containing gas, and helium. In a specific embodiment, the carbon-containing gas contains acetylene (C2H2). The first processing gas source 140 supplies the precursor gas through one or more channels 191 in the lid 125. One or more channels 191 lead the precursor gas from the first processing gas source 140 to the processing space 160. In some embodiments that can be combined with other embodiments described herein, a second processing gas source 142 is fluidly connected to the processing space 160 via a gas ring having a nozzle attached to a spacer 110, or via an inlet 144 located on the chamber sidewall. In one embodiment, the second processing gas source 142 includes a precursor gas such as a carbon-containing gas, a hydrogen-containing gas, and helium, among which, for example, C2H2 is included. In some embodiments that can be combined with other embodiments described herein, the total flow rate of the precursor gas to the processing space 160 is about 100 sccm to about 2 slm. The flow of the precursor gas to the processing space 160 via the second processing gas source 142 is uniformly distributed within the processing space 160. In one embodiment, a plurality of inlets 144 can be distributed radially to the spacer 110 or to the chamber sidewall. In such embodiments, the gas flow to each of the inlets 144 can be controlled separately to further promote gas uniformity within the processing space 160.
[0016]
[0020] Lid 125 is also connected to a first or upper radio frequency (RF) power supply 165. The first RF power supply 165 facilitates the maintenance or generation of plasma, such as plasma generated from a cleaning gas. The cleaning gas is ionized in situ via the first RF power supply 165 to become plasma. The substrate support 115 is connected to a second or lower RF power supply 170. The first RF power supply 165 is, for example, a medium-to-high frequency RF power supply in the range of approximately 13.56 MHz to approximately 80 MHz (e.g., 20 MHz to approximately 40 MHz). The second RF power supply 170 is, for example, a low-to-medium frequency RF power supply in the range of approximately 400 kHz to approximately 27 MHz. Note that other frequencies are also intended. In some implementations, the second RF power supply 170 is a mixed-frequency RF power supply, providing low-to-medium frequencies, or low-to-high frequencies, such as low frequencies of 2 MHz or 400 kHz combined with 13.56 MHz frequency power, or low frequencies of 2 MHz or 400 kHz combined with 40 MHz frequency power. The use of a dual-frequency RF power supply, particularly the use of the second RF power supply 170 used for deposition, can improve film quality on the substrate. The first RF power supply 165 is used to clean the upper part of the processing space, such as the lid. Although not bound by theory, it is thought that if only the second RF power supply 170 is used for deposition, the plasma in the upper part of the processing space near the lid will be weaker, resulting in a decrease in film quality in the upper part. Using a dual-frequency RF power supply with the first RF power supply 165 improves film quality on the lid. The improvement in film quality can be confirmed by scanning electron microscope (SEM) images of the film cross-section. Specifically, the cross-section of the film is amorphous and homogeneous, and less porous. Furthermore, the improvement in film quality is reflected in a reduction in the number of defects on the substrate, which are a cause of decreased device manufacturing yield. These characteristics are evidence of a high-quality film. While not bound by theory, it is believed that low-quality carbon films have mismatches and defects caused by compressive stress, which are the cause of defects in films exceeding a certain thickness, such as over 3,000 Å and over 5,000 Å. Power is supplied from the first RF power supply 165 located at the top of the chamber, thereby adjusting the DC bias voltage (V) of the substrate support 115. dc) decreases. The quality of the film on the surface 304 of the lid 125 improves, but the film quality on the substrate deteriorates. V at substrate level 145 dc It was found that the loss is compensated by using additional independent power control from a low-frequency source (e.g., a third RF power supply 171) in combination with a medium-to-high frequency source from the bias (e.g., a second RF power supply 170). The low-frequency RF power supply 171 allows for further tuning to improve the film characteristics on the substrate. The V due to the high-frequency power of the first RF power supply 165 dc To compensate for the losses, the low-frequency power generator has a high V dc It has been found that by providing (for example, high ion collisions), the film quality on the lid surface can be improved while maintaining good film quality on the substrate. Thus, the low dual-frequency power provided by the second RF power supply 170 and / or third RF power supply 171 described herein enables good quality film deposition overall at a low total power.
[0017]
[0021] One or both of the first RF power supply 165 and the second RF power supply 170 are used to generate or maintain plasma within the processing space 160. For example, the second RF power supply 170 may be used during the deposition process, and the first RF power supply 165 may be used during the cleaning process. In some deposition processes, the first RF power supply 165 is used in combination with the second RF power supply 170. During the deposition process, one or both of the first RF power supply 165 and the second RF power supply 170 supply power within the processing space 160 ranging from about 100 watts (W) to about 20,000 watts (W) to promote the ionization of the precursor gas. In some embodiments that can be combined with other embodiments described herein, during deposition, the first RF power supply 165 supplies a first power of about 200 W to about 5 kW, for example, about 700 W to about 3 kW, for example, about 1 kW to about 3 kW. The second RF power supply 170 supplies a second power of approximately 1000W to 6KW, for example, approximately 1500W to 4KW. The third RF power supply 171 supplies a third power of approximately 500W to 5000W.
[0018]
[0022] In another embodiment that can be combined with other embodiments described herein, the precursor gas includes helium and C2H2. In one embodiment that can be combined with other embodiments described herein, C2H2 is provided at a flow rate of about 10 sccm to about 1,000 sccm, and He is supplied at a flow rate of about 50 sccm to about 5,000 sccm.
[0019]
[0023] The substrate support 115 is connected to an actuator 175 (i.e., a lift actuator) that provides movement in the Z direction. The substrate support 115 is also connected to a facility cable 178 that has the flexibility to allow vertical movement of the substrate support 115 while maintaining communication with the second RF power supply 170 and other power and fluid connections. The spacer 110 is disposed on top of the chamber body 192. The height of the spacer 110 allows vertical movement of the substrate support 115 within the processing space 160. The height of the spacer 110 is from about 0.5 inches to about 20 inches. In one example, the substrate support 115 is movable from a first distance to a second distance relative to the lid 125. In one embodiment, the second distance is about 2 / 3 of the first distance 180A. For example, the difference between the first distance 180A and the second distance is from about 5 inches to about 6 inches. Thus, from the position shown in FIG. 1, the substrate support 115 is movable by about 5 inches to about 6 inches relative to the lower surface of the lid 125. In another example, the substrate support 115 is fixed at one of the first distance 180A and the second distance 180B. In contrast to conventional plasma enhanced chemical vapor deposition (PECVD) processes, the spacer 110 greatly increases the distance (and thus the space) between the substrate support 115 and the lid 125.
[0020]
[0024] The variable pressure system 120 includes a first pump 182 and a second pump 184. The first pump 182 is a roughing pump that can be used during the cleaning process and / or the substrate transfer process. A roughing pump is generally configured for the movement of a higher volume flow rate and / or the operation of a relatively high pressure (although below atmospheric pressure). In one embodiment, the first pump 182 maintains the pressure in the processing chamber below 50 mTorr during the cleaning process. In another embodiment, the first pump 182 maintains the pressure in the processing chamber at about 0.5 mTorr to about 10 Torr. The use of the roughing pump during the cleaning operation serves to relatively increase the pressure and volume flow rate of the cleaning gas (compared to the deposition operation). Since the pressure and / or volume flow rate during the cleaning operation is relatively high, the cleaning of the chamber surface is improved.
[0021]
[0025] The second pump 184 may be either a turbo pump or a cryo pump. The second pump 184 is used during the deposition process. The second pump 184 is generally configured to operate at a relatively low volume flow rate and / or pressure. For example, the second pump 184 is configured to maintain the processing area 160 of the processing chamber at a pressure below about 50 mTorr. In another embodiment, the second pump 184 maintains the pressure in the processing chamber at about 0.5 mTorr to about 10 Torr. As the pressure in the processing area 160 maintained during deposition decreases, when depositing a carbon-based hard mask, it becomes easier to deposit a film with reduced compressive stress and / or a film with increased sp 2 -sp 3 -sp conversion. Thus, the processing chamber 100 is configured to utilize a relatively low pressure to improve deposition and a relatively high pressure to improve cleaning performance.
[0022]
[0026] The valve 186 is used to control the conductance path to one or both of the first pump 182 and the second pump 184. The valve 186 also pumps symmetrically from the processing space 160.
[0023]
[0027] The processing chamber 100 also includes a substrate transport port 185. The substrate transport port 185 is selectively sealed by an inner door 186A and an outer door 186B. Each of the doors 186A and 186B is connected to an actuator 188 (i.e., a door actuator). The doors 186A and 186B facilitate vacuum sealing of the processing space 160. The doors 186A and 186B also provide symmetrical RF application and / or plasma symmetry within the processing space 160. In one embodiment, at least the door 186A is formed of a material that facilitates the conduction of RF power, such as stainless steel, aluminum, or an alloy thereof. A seal 116, such as an O-ring, located at the interface between the spacer 110 and the chamber body 192, can further seal the processing space 160. A controller 194 connected to the processing chamber 100 is configured to control the behavior of the processing chamber 100 during processing.
[0024]
[0028] The spacer 110 includes a height that gives rise to the volume of the processing space 160, which is approximately 0.5 inches to approximately 20 inches, for example, approximately 0.5 inches to approximately 3 inches, for example, approximately 10 inches to approximately 20 inches, for example, approximately 14 inches to approximately 16 inches. The height of the processing space 160 offers several advantages. One advantage is the reduction of film stress, which reduces the stress that causes warping in the substrate being processed inside. The height of the processing space 160 affects the plasma density distribution from the top to the bottom of the processing space. The method provided herein, by using an upper RF source, brings a predetermined plasma density to the upper portion of the processing space that is useful for depositing a carbon film on a portion of the chamber components, such as a portion of the lid 125. Furthermore, the method provided herein, by using a lower RF source, maintains a plasma density in the lower portion of the processing space that is suitable for film deposition on a substrate placed on the substrate support 115.
[0025]
[0029] Figure 2 is a schematic cross-sectional view showing one embodiment of the substrate support 115. The substrate support 115 includes an electrostatic chuck 230. The electrostatic chuck 230 includes a pack 200. The pack 200 includes one or more electrodes 205 (e.g., a first electrode and a second electrode) embedded therein. The first electrode is a chuck electrode, and the second electrode is an RF bias electrode. The substrate support 115 can be biased by supplying RF power with a frequency of about 300 kHz to about 60 MHz to the second electrode. The frequency supplied to the second electrode may be pulsed. The pack 200 is formed from a dielectric material such as a ceramic material, for example, aluminum nitride (AlN).
[0026]
[0030] The pack is supported by a dielectric plate 210 and a base plate 215. The dielectric plate 210 can be made from an electrically insulating material such as quartz, or a thermoplastic material such as a high-performance plastic sold under the trade name REXOLITE®. The base plate 215 may be made from a metallic material such as aluminum. During operation, the base plate 215 is connected to ground or electrically floating while the pack 200 is RF hot. At least the pack 200 and the dielectric plate 210 are surrounded by an insulating ring 220. The insulating ring 220 may be made from a dielectric material such as quartz, silicon, or ceramic material. Part of the base plate 215 and the insulating ring 220 are surrounded by an aluminum grounding ring 225. The insulating ring 220 prevents or minimizes arc discharge between the pack 200 and the base plate 215 during operation. The end of the equipment cable 178 is shown within an opening formed in the pack 200, the dielectric plate 210, and the base plate 215. Power to the electrodes of the pack 200, as well as fluid from the gas supply to the substrate support 115, are supplied by the equipment cable 178.
[0027]
[0031] The edge ring is positioned adjacent to the inner circumference of the insulator ring 220. The edge ring can be made of dielectric materials such as quartz, silicon, crosslinked polystyrene and divinylbenzene (e.g., REXOLITE®), PEEK, Al2O3, and AIN. Utilizing an edge ring made of such dielectric material modulates the plasma coupling and changes the voltage (V) on the substrate support without altering the plasma output. dc This helps to modulate plasma properties such as ) and improve the properties of hard mask films deposited on substrates. By modulating the RF coupling with the wafer or substrate through the edge ring material, the elastic modulus and stress of the film can be separated.
[0028]
[0032] Figures 3A and 3B are enlarged schematic cross-sectional views of the lid 125 shown in Figure 1. One or more channels 191 are located in the center of the lid 125 and have an angled orientation, depicted as an angled channel 302 in Figure 3A. Alternatively, one or more channels 191 have a substantially vertical channel 302, as depicted in Figure 3B. Other angles, spacings, and orientations are also possible.
[0029]
[0033] Figure 4 is a flowchart of a method for processing a substrate according to an embodiment of the present disclosure. In operation 402, a gas is introduced into the processing space of the chamber. The gas is a carbon-containing gas such as a hydrocarbon gas (e.g., C2H2). In operation 404, a first radio frequency (RF) power having a first frequency of about 40 MHz to about 60 MHz, for example, about 40 MHz or about 60 MHz, is supplied to the lid 125 of the chamber. The first RF source 165 is an upper RF source. In operation 406, a second RF power having a second frequency is supplied to electrodes placed on a substrate support in the processing space. The second frequency is about 10 MHz to about 40 MHz, for example, about 13.56 MHz. Furthermore, a third RF power is supplied to electrodes placed on a substrate support having a low frequency generator such as about 400 kHz to about 5 MHz. The first RF source, the second RF source, and / or the third RF source supply power simultaneously and continuously during deposition.
[0030]
[0034] In operation 408, a film having a thickness of approximately 5 KÅ to approximately 3 μm, for example, approximately 1 μm to approximately 2 μm, is deposited on a substrate placed on a substrate support. Furthermore, the film is deposited on at least a portion of at least one chamber component, such as the surface 304 of the lid 125. The film is deposited in a single continuous deposition without washing between deposition steps. In conventional deposition processes, when depositing a carbon film on a substrate to a thickness of 3,000 Å or more, intermittent cleaning plasma is used, which alternately repeats deposition until the desired thickness is reached. Conventional cleaning processes between the intermediate layers of thick carbon films are used to minimize film defects and control film quality on chamber components. Poor film quality on the lid includes decreased cohesive force and increased granularity, heterogeneity, and porosity of the film due to gap formation with the structure. If the film breaks due to stress, particles may detach from the film, causing contamination of the substrate. Because film quality is controlled each time additional cleaning is performed and the substrate is removed and replaced, the time required for substrate processing increases, negatively impacting the device yield. Furthermore, if cleaning is not performed regularly during the deposition of a thick carbon film, the carbon atoms in the film on the lid 125 will not aggregate sufficiently, and the film quality on the lid surface 304 will deteriorate. In the method 400 described herein, there is no need to clean the chamber after each intermediate layer deposited on the substrate. On the contrary, a good quality film is deposited with a thickness exceeding 3,000 Å, for example, about 5,000 Å to about 3 μm, for example, about 1.5 μm. In this specification, "good quality film" refers to a film free from stress-induced defects such as cracks.
[0031]
[0035] While not strictly theoretical, it is believed that bottom-only RF source deposition results in poor film quality on the lid surface 304 of a chamber with a large gap between the substrate and the lid 125. A bottom-only RF source configuration in a chamber with a large gap results in a considerably weaker plasma density in the upper region of the chamber. Thus, while bottom-only RF source deposition deposits a good quality film on the substrate, the film deposited on the lid surface 304 is of poor quality carbon with columnar characteristics and porosity, leading to poor aggregation after a certain thickness of deposition. Adding a small amount of high-frequency upper RF source to the bottom RF source improves film quality on the lid 125 by increasing the plasma density in the upper part of the processing space. Specifically, the first RF power supply provides lid 125 with approximately 200W to 5KW of RF power, for example, approximately 1KW to 3KW, during deposition, while the second RF power supply provides 1500W to 6000W of RF power, for example, approximately 1500W to 4000W, to the electrodes.
[0032]
[0036] The dual-frequency systems described herein are also suitable for in-situ cleaning processes, such as cleaning a chamber using an oxygen-containing gas. During cleaning, the first RF source supplies approximately 1 kW to 3 kW of RF power to the lid, and the second RF power supply supplies approximately 1500 W to 6000 W of RF power to the electrodes. The upper RF source is also suitable for cleaning the upper portion of the processing space, eliminating the need for cleaning the space using a remote plasma source. Similar to the deposition process, the cleaning process of this disclosure includes supplying a first RF power having a first frequency of approximately 40 MHz or higher to the lid of the chamber. The cleaning process further includes supplying a second RF power having a second frequency to electrodes placed on a substrate support within the processing space. The second frequency is approximately 10 MHz to 20 MHz, and is, for example, a combination of a frequency of approximately 2 MHz from a low-frequency generator and a frequency of 13.56 MHz from a second low-frequency generator.
[0033]
[0037] While the above description applies to embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.
Claims
1. Moving a substrate support on which a substrate is placed from a first position to a second position within the processing space of a chamber, wherein the difference between the first position and the second position is 5 to 6 inches in distance from the lower surface of the chamber lid. Introducing gas into the processing space of the chamber, A first high-frequency (RF) power having a first frequency of approximately 40 MHz or higher is supplied to the lid of the chamber. The method involves supplying a second RF power having a second frequency to a bias electrode disposed on a substrate support within the processing space, wherein the second RF power is supplied with a second frequency of approximately 10 MHz to approximately 40 MHz. The method involves depositing a film on the substrate placed on the substrate support, wherein the film has a thickness of approximately 3,000 angstroms or more. A method that includes this.
2. The method according to claim 1, wherein the film is deposited on the substrate by a continuous deposition process.
3. The method according to claim 2, wherein the film on the surface of the chamber components of the chamber has a thickness of 5,000 angstroms or more.
4. The method according to claim 3, wherein the film is an amorphous carbon film.
5. The method according to claim 3, further comprising adjusting the first RF power based on a predetermined deposition rate of the film.
6. The method according to claim 1, wherein the gas is a carbon-containing gas.
7. The method according to claim 1, wherein supplying the first RF power includes supplying RF power of about 200 W to about 1 KW.
8. The method according to claim 1, wherein supplying the second RF power includes supplying about 1 kW to 6 kW of RF power to the bias electrode.
9. The method according to claim 1, wherein the first RF power is supplied by a first RF source, the second RF power is supplied by a second RF source, and the third RF power is supplied by a third RF source, the second RF source includes a second RF frequency of about 40 MHz or less, and the third RF source includes a third RF frequency of about 400 kHz to 2 MHz, and the first RF power, the second RF power, and the third RF power are supplied to each other simultaneously.
10. The method according to claim 1, characterized in that the first position is approximately 1.5 times the second position in terms of distance from the lower surface of the lid of the chamber.
11. A method for processing a substrate, The process involves moving a substrate support on which a substrate is placed from a first position to a second position within the processing space of a chamber, wherein the difference between the first position and the second position is 5 to 6 inches in distance from the lower surface of the chamber lid. Introducing gas into the processing space of the chamber, A first high-frequency (RF) power having a first frequency of approximately 40 MHz or higher is supplied to the lid of the chamber. The method involves supplying a second RF power having a second frequency to an electrode arranged on a substrate support within the processing space, wherein the second RF power is supplied with a second frequency of approximately 10 MHz to approximately 40 MHz. A film having a thickness of about 5 kÅ to about 3 μm is deposited on the substrate placed on the substrate support and on at least one surface of the chamber component. Methods that include...
12. The method according to claim 11, wherein the first RF power and the second RF power are supplied to each other simultaneously.
13. The method according to claim 11, wherein the gas comprises acetylene.
14. The method according to claim 11, wherein the film comprises amorphous carbon.
15. A system including an algorithm stored in the system's memory, wherein the algorithm, when executed by a processor, includes several instructions causing the system to perform the method according to claim 11.
16. The method according to claim 11, characterized in that the first position is approximately 1.5 times the second position in terms of distance from the lower surface of the lid of the chamber.