Method for depositing refractive index films with varying depths
By dividing optical device films into zones with varying material concentrations and controlling power levels or gas flow rates, the film achieves a continuous refractive index profile, addressing discontinuities and enhancing optical properties.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2024-05-31
- Publication Date
- 2026-05-19
AI Technical Summary
Conventional optical device films face challenges in continuously adjusting refractive index over a large range, leading to discontinuous refractive indices and optical aberrations due to the use of multiple materials with sharp changes, which degrade light reflectance and transmittance.
The optical device film is divided into zones with varying concentrations of first and second materials, each having distinct refractive indices, controlled through power levels or gas flow rates to achieve a continuous refractive index profile.
This approach allows for continuous adjustment of refractive index, reducing optical aberrations and improving light reflectance and transmittance by using materials like TiO2 and SiO2 with controlled concentration profiles.
Smart Images
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Abstract
Description
Technical Field
[0001]
[0001] Embodiments of the present disclosure relate to an optical device film and a method of forming an optical device film.
Background Art
[0002]
[0002] Optical devices such as waveguides, planar optical devices, metasurfaces, color filters, and antireflection coatings are designed to exhibit characteristics of high refractive index and low absorption loss. Metal oxide-containing materials, such as titanium dioxide (TiO2), have a high refractive index and low absorption loss, which enables efficient and large-scale manufacturing of optical devices.
[0003]
[0003] Graded index optical device films are used to control light interacting at the surface or within the film. In conventional optical device films, it is difficult to continuously adjust the refractive index over a large range by changing the deposition conditions of a single material, and it was necessary to approximate a continuous profile with a step profile using multiple materials.
[0004]
[0004] Conventional optical device films typically include multiple different layers of materials having different refractive index characteristics, such as a step index waveguide. For example, an optical film is formed of a TiO2 layer deposited on the surface of an optical device substrate, and a silicon dioxide (SiO2) layer is formed above the TiO2 layer. Here, the TiO2 layer has a refractive index of about 2.4 (n = 2.4), and the SiO2 layer has a refractive index of about 1.5 (n = 1.5). The difference in refractive index between the TiO2 layer and the SiO2 layer is approximately 0.9, which represents a sharp change for light passing through the layers. This sharp change can be characterized as a discontinuous step between the optical materials and degrades desired optical device characteristics such as light reflectance and light transmittance for light passing through different layers. Conventional optical device films often include multiple different layers of two or more materials to reduce the change in refractive index between the layers and improve the desired optical properties between the layers. However, the refractive indices of these conventional optical device films are discontinuous, and there may be optical aberrations in such conventional optical device films.
[0005]
[0005] Therefore, in the field of the art, there is a need to improve optical device films and methods for forming optical device films. [Overview of the project]
[0006]
[0006] In one embodiment, an optical device film is provided. The optical device film has a thickness divided into a series of zones, from a first surface corresponding to 0% of the thickness to a second surface corresponding to 100% of the thickness. Each zone in the series has a zone thickness. The optical device film has an oxygen concentration or a nitrogen concentration in each zone in the series. The optical device film also includes a first material having a first refractive index of about 2.0 or higher and a second material having a second refractive index of less than about 2.0. The first material has a first concentration profile across the entire series of zones. The second material has a second concentration profile across the entire series of zones. The second concentration profile is different from the first concentration profile.
[0007]
[0007] In another embodiment, a method is provided. This method includes arranging an optical device substrate on a substrate support. The substrate support is arranged in a chamber. The chamber includes a first target and a second target arranged in the chamber. The first target comprises a first material, and the second target comprises a second material. An optical device film is deposited on the optical device substrate by depositing the first material with a first concentration profile and the second material with a second concentration profile. Depositing the first material includes providing a first power level to the first target. The first concentration profile of the first material is controlled by increasing or decreasing the first power level provided to the first target. Depositing the second material includes providing a second power level to the second target. The second concentration profile of the second material is controlled by increasing or decreasing the second power level provided to the second target.
[0008]
[0008] In another embodiment, a method is provided. The method includes arranging an optical device substrate on a substrate support. The substrate support is placed in a chamber. The chamber includes a first target and a gas source. The first target includes a first material. The gas source is operable to flow a precursor gas containing a second material. An optical device film is deposited on the optical device substrate by depositing the first material at a first concentration profile and the second material at a second concentration profile. Depositing the first material includes providing a first power level to the first target. The first concentration profile of the first material is controlled by increasing or decreasing the first power level provided to the first target. Depositing the second material includes providing a precursor gas at a certain flow rate. The second concentration profile of the second material is controlled by increasing or decreasing the flow rate of the precursor.
[0009]
[0009] In yet another embodiment, a method is provided. This method includes placing an optical device substrate in a chamber, flowing a first gas containing a first material into the chamber at a first flow rate, and flowing a second gas containing a second material into the chamber at a second flow rate. The first concentration profile of the first material in the deposited optical device film is controlled by increasing or decreasing the first flow rate while flowing the first gas. The second concentration profile of the second material in the deposited optical device film is controlled by increasing or decreasing the second flow rate while flowing the second gas.
[0010]
[0010] A more detailed description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments, some of which are shown in the accompanying drawings, so that the features of the disclosure described above can be understood in more detail. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the disclosure, as other equally valid embodiments are also permissible. [Brief explanation of the drawing]
[0011] [Figure 1]
[0011] This is a schematic cross-sectional view of an optical device film according to an embodiment described herein. [Figure 2A-2B]
[0012] This is a schematic cross-sectional view of an optical device formed from an optical device film. [Figure 3]
[0013] This is a schematic cross-sectional view of a physical vapor deposition (PVD) chamber according to an embodiment described herein. [Figure 4]
[0014] This is a schematic cross-sectional view of a chemical vapor deposition (CVD) chamber according to an embodiment described herein. [Figure 5]
[0015] This is a flowchart of a method for manufacturing an optical device film according to the embodiment described herein. [Figure 6] This is a flowchart of a method for manufacturing an optical device film according to the embodiment described herein. [Figure 7] This is a flowchart of a method for manufacturing an optical device film according to the embodiment described herein. [Modes for carrying out the invention]
[0012]
[0016] To facilitate understanding, the same reference numerals were used, where possible, to indicate identical elements common to multiple figures. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.
[0013]
[0017] Embodiments of this disclosure relate to optical device films and methods for forming optical device films. Specifically, embodiments described herein provide optical device films having an oxygen concentration or nitrogen concentration, a first concentration profile of a first material, and a second concentration profile of a second material. The optical device film comprises a first material at the first concentration and a second material at the second concentration throughout the thickness of the film. The first material described and referenced herein has a first refractive index of about 2.0 or greater. The second material described and referenced herein has a second refractive index of less than 2.0. The first material includes, but is not limited to, oxides or nitrides of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb). The second material includes, but is not limited to, oxides or nitrides of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg).
[0014]
[0018] Figure 1 is a schematic cross-sectional view of the optical device film 100. The optical device film 100 is placed on an optical device substrate 101 according to embodiments described herein. The optical device substrate 101 is any suitable optical device substrate on which an optical device can be formed. In one embodiment, the optical device substrate 101 is a silicon (Si)-containing optical device substrate. In one embodiment, the optical device substrate 101 is a silicon oxide-based glass or a metal oxide-based glass. In one embodiment, the optical device substrate 101 includes, but is not limited to, silicon (Si), silicon nitride (SiN), silicon dioxide (SiO2), fused silica, quartz, silicon carbide (SiC), germanium (Ge), silicon germanium (SiGe), indium phosphide (InP), gallium arsenide (GaAs), gallium oxide (GaO), diamond, lithium niobate (LiNbO3), gallium nitride (GaN), sapphire, tantalum oxide (Ta2O5), titanium dioxide (TiO2), or combinations thereof. The optical device substrate 102 may include an optically transparent perovskite material. In another embodiment, the optical device substrate 101 is a layered optical device substrate, such as a thin glass bonded to a silicon carrier. The layered optical device substrate may be a substrate on which an optical device stack (e.g., a grating, waveguide, optoelectronics, monolithic integrated CMOS-optical device, or patterned optical device film for heterogeneous integrated CMOS-optical device) is arranged. In yet another embodiment, the optical device substrate 101 is a laminated substrate comprising multiple layers of bonded glass.
[0015]
[0019] The optical device film 100 has a first surface 102, a second surface 110, and a thickness 106. The thickness 106 of the optical device film 100 is divided into a range of zones 105 measured from the first surface 102, which corresponds to 0% of the thickness 106, to the second surface 110, which corresponds to 100% of the thickness 106. In one embodiment, which can be combined with other embodiments described herein, the thickness 106 has a constant or substantially constant oxygen or nitrogen concentration throughout the range of zones 105 of the optical device film 100. In one embodiment, the difference in oxygen or nitrogen concentration between each zone 104 within the range of zones 105 is an atomic percentage of 10% (e.g., ±5%). In one embodiment, the oxygen concentration of the optical device film 100 of the first material TiO2 and the second material SiO2 is about 66.67 atomic percent at ±10%. Each zone 104 has a zone thickness of about 0.001% to about 50% of the thickness 106. Each zone 104 comprises a first material of a first concentration and a second material of a second concentration. The first material described and referenced herein has a first refractive index of about 2.0 or greater. The second material described and referenced herein has a second refractive index of less than 2.0. The first and second materials may be metal-containing materials or semiconductor materials. For example, the first material includes, but is not limited to, oxides or nitrides of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb). For example, the second material includes, but is not limited to, oxides or nitrides of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg).
[0016]
[0020] During deposition In stagesBy incorporating first and second materials of different concentrations, the optical properties of the optical device film 100, i.e., the refractive index, can be changed. In one embodiment, each zone 104 has a zone thickness ranging from about 0.001% to about 50% of the thickness 106. A first concentration of the first material throughout the range of zone 105 with a thickness of 106 has a first concentration profile, and a second concentration of the second material throughout the range of zone 105 with a thickness of 106 has a second concentration profile. In one embodiment, the first concentration has its maximum concentration in the first zone 108 of the range of zone 105 adjacent to the first surface 102, and its minimum concentration in the last zone 109 of the range of zone 105 adjacent to the second surface 110. The second concentration has its minimum concentration in the first zone 108 of the range of zone 105, and its maximum concentration in the last zone 109. In embodiments where the oxygen concentration (for example, between a first material of TiO2 and a second material of SiO2) is approximately 66.67 atomic percent at ±10%, the minimum concentration is approximately 0 atomic percent and the maximum concentration is approximately 33.3 atomic percent. In embodiments, the first concentration of each zone 104 deposited immediately above the preceding zone is less than or equal to the first concentration of the preceding zone, and the second concentration of each zone 104 deposited immediately above the preceding zone is greater than or equal to the second concentration of the preceding zone.
[0017]
[0021] In another embodiment, the first concentration has a minimum concentration in the first zone 108 and a maximum concentration in the final zone 109. The second concentration has a maximum concentration in the first zone 108 and a minimum concentration in the final zone 109. In this embodiment, the first concentration in each zone 104 deposited immediately above the preceding zone is greater than or equal to the first concentration in the preceding zone, and the second concentration in each zone 104 deposited immediately above the preceding zone is less than or equal to the second concentration in the preceding zone.
[0018]
[0022] In another embodiment, the first and second concentration profiles have sinusoidal profiles. In one embodiment where the first and second concentration profiles have sinusoidal profiles, the first concentration has a maximum concentration in the first zone 108, decreasing to a minimum concentration at the midpoint of the zone 105 range and increasing to a maximum concentration in the final zone 109. The second concentration has a minimum concentration in the first zone 108, increasing to a maximum concentration at the midpoint of the zone 105 range and decreasing to a minimum concentration in the final zone 109. In another embodiment where the first and second concentration profiles have sinusoidal profiles, the first concentration has a minimum concentration in the first zone 108, increasing to a maximum concentration at the midpoint of the zone 105 range and decreasing to a minimum concentration in the final zone 109. The second concentration has a maximum concentration in the first zone 108, decreasing to a minimum concentration at the midpoint of the zone 105 range and increasing to a maximum concentration in the final zone 109.
[0019]
[0023] In yet another embodiment, the first concentration profile of the first material and the second concentration profile of the second material of the optical device film 100 are controlled by embodiments of methods 500, 600, 700 such that any profile can be obtained. In an embodiment of the method 500 for forming the optical device film 100 described herein, the first concentration and the second concentration can be controlled by at least one of increasing or decreasing the first power level provided to the first target of the first material, or increasing or decreasing the second power level provided to the second target of the second material. In an embodiment of the method 600 for forming the optical device film 100 described herein, the first concentration and the second concentration can be controlled by at least one of increasing or decreasing the first power level provided to the first target of the first material, and increasing or decreasing the flow rate of the precursor gas containing the second material. In an embodiment of the method 700 for forming the optical device film 100 described herein, the first concentration and the second concentration can be controlled by at least one of increasing or decreasing the first flow rate of the first gas containing the first material, and increasing or decreasing the second flow rate of the second gas containing the second material. Thus, the optical device film 100 having a concentration of oxygen or nitrogen can include any desired profile of the first material and the second material.
[0020]
[0024] The optical device film 100 of methods 500, 600, 700 described herein formed from the first material and the second material can include one or more of oxides or nitrides of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb), and one or more of oxides or nitrides of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg).
[0021]
[0025] Figures 2A and 2B are schematic cross-sectional views of optical devices 200a and 200b formed from an optical device film 100. The optical devices 200a and 200b include optical device structures 202a and 202b disposed on an optical device substrate 101. The optical device structures 202a and 202b include submicron critical dimensions corresponding to the widths 203 of the optical device structures 202a and 202b, for example, nanosize dimensions. The optical device structure 202a can be a binary structure in which the top surface 224 of the optical device structure 202a is parallel to the surface 102 of the optical device substrate 101. The first sidewall 225 and the second sidewall 226 are parallel to the third sidewall 227 and the fourth sidewall 228. The sidewalls 225, 226, 227, and 228 are oriented in a direction perpendicular to the main axis of the optical device substrate 101. The optical device structure 202b can be an angle structure having sidewalls 225, 226, 227, and 228 inclined with respect to the surface 102 of the optical device substrate 101. The optical devices 200a and 200b are formed from an optical device film 100 having a first concentration profile of a first material, a second concentration profile of a second material, and a concentration of oxygen or nitrogen across the thickness 106 of the optical device film 100.
[0022]
[0026] Figure 3 is a schematic cross-sectional view of a PVD chamber 300. The PVD chamber 300 can be used in the methods 500 and 600 described herein. The PVD chamber 300 described below is an exemplary PVD chamber, and it should be understood that other PVD chambers, including PVD chambers from other manufacturers, may be used or modified to achieve the aspects of the present disclosure.
[0023]
[0027] The PVD chamber 300 includes a plurality of cathodes 302, 303 having a plurality of corresponding targets (at least one first target 304 and at least one second target 306) attached to the chamber body 310 (for example, via a chamber body adapter 308). The first target 304 comprises at least one first material as described herein, and the second target 306 comprises at least one second material as described herein. Each cathode (for example, the first target 304 and the second target 306) may be coupled to a DC power supply 312 or an RF power supply 314 and a matching network 316.
[0024]
[0028] The PVD chamber 300 is configured to include a substrate support 332 having a support surface 334 for supporting the optical device substrate 101. The PVD chamber 300 includes an opening 350 (e.g., a slit valve) through which an end effector (not shown) passes to place the optical device substrate 101 on a lift pin (not shown) for lowering the optical device substrate 101 onto the support surface 334.
[0025]
[0029] The PVD chamber 300 includes a sputtering gas source 361 that can be operated to supply a sputtering gas, such as argon (Ar), to the processing space 305. A gas flow controller 362 is positioned between the sputtering gas source 361 and the processing space 305 to control the flow of sputtering gas from the sputtering gas source 361 to the processing space 305. The PVD chamber 300 includes a reactive gas source 363 that can be operated to supply a reactive gas, such as an oxygen-containing gas or a nitrogen-containing gas, to the processing space 305. A gas flow controller 364 is positioned between the reactive gas source 363 and the processing space 305 to control the flow of reactive gas from the reactive gas source 363 to the processing space 305. The PVD chamber 300 may include a precursor gas source 370 that can be operated to supply a precursor gas to the processing space 305. A gas flow controller 371 is positioned between the precursor gas source 370 and the processing space 305 to control the flow of precursor gas from the precursor gas source 370 to the processing space 305.
[0026]
[0030] In the embodiment shown in Figure 3, the substrate support 332 includes an RF bias power supply 338 coupled to a bias electrode 340 located within the substrate support 332 via a matching network 342. The substrate support 332 includes a mechanism (not shown) for holding the optical device substrate 101 on the support surface 334 of the substrate support 332, such as an electrostatic chuck, a vacuum chuck, or a substrate holding clamp. The substrate support 332 includes a cooling conduit 365 located within the substrate support 332, which cools the substrate support 332 and the optical device substrate 101 positioned thereon to a controllable temperature, for example, between approximately -20°C and 300°C. The cooling conduit 365 is coupled to a cooling fluid source 368 that provides a cooling fluid (not shown). The substrate support 332 also includes a heater 367 embedded therein. A heater 367, such as a resistive element, positioned within the substrate support 332 is coupled to an optional heater power supply 366 to control the heating of the substrate support 332 and the optical device substrate 101 positioned thereon to a predetermined temperature, for example, between approximately -20°C and 300°C.
[0027]
[0031] Figure 3 shows one first target 304 and one second target 306, but the PVD chamber 300 may include one or more first targets 304 and / or one or more second targets 306. For example, the PVD chamber 300 may contain 3 to 5 targets selected from at least one of the first targets 304 and / or the second targets 306. Each first target 304 is operable to deposit different materials. For example, the PVD chamber 400 may contain 3 to 5 second targets 306. Each optical device material target 306 is operable to deposit different materials. In embodiments having one or more first targets 304 and / or one or more second targets 306, each first target 304 is operable to deposit a different first material and / or each second target 306 is operable to deposit a different second material.
[0028]
[0032] Figure 4 is a schematic cross-sectional view of a CVD chamber 400 that may be used in the method 700 described herein. It should be understood that the CVD chamber 400 described herein is an exemplary CVD chamber, and other CVD chambers, including CVD chambers from other manufacturers, may be used or modified to achieve aspects of this disclosure.
[0029]
[0033] The CVD chamber 400 has a chamber body 402 including a processing space 404, on which a substrate support 406 is positioned and supports an optical device substrate 101. The substrate support 406 includes a heating / cooling conduit 410 and a mechanism for holding the optical device substrate 101 on the support surface 407 of the substrate support 406, such as an electrostatic chuck, a vacuum chuck, or a substrate holding clamp. The substrate support 406 is connected to the processing space 404 and is movable by a stem 408 connected to a lift system (not shown) that moves the substrate support 406 between a raised processing position and a lowered position to facilitate the transfer of the optical device substrate 101 to and from the CVD chamber 400 through an opening 412.
[0030]
[0034] The CVD chamber 400 includes a flow controller 418A, positioned between the first gas source 416A and the chamber body 402, for controlling a first flow rate of a first processing gas of a first material from the first gas source 416A to the showerhead 414. The CVD chamber 400 also includes a flow controller 418B, positioned between the second gas source 416B and the chamber body 402, for controlling a second flow rate of a second processing gas of a second material from the second gas source 416B to the showerhead 414. The showerhead 414 is connected to an RF power supply 422 by an RF feed 424 for generating plasma in the processing space 404 from the first and / or second processing gases. The RF power supply 422 provides RF energy to the showerhead 414 to facilitate plasma generation between the showerhead 414 and the substrate support 406. A vacuum pump 420 is coupled to the chamber body 402 to control the pressure in the processing space 404. The controller 428 is coupled to the CVD chamber 400 and is configured to control various aspects of the chamber 400 during processing.
[0031]
[0035] Figure 4 shows a first gas source 416A and a second gas source 416B, but the CVD chamber 400 may include one or more first gas sources 416A and / or one or more second gas sources 416B. For example, the CVD chamber 400 may include 3 to 5 gas sources selected from at least one of the first gas sources 416A and the second gas sources 416B. In embodiments having one or more first gas sources 416A and one or more second gas sources 416B, each first gas source 416A is operable to deposit a different first material, and / or each second gas source 416B is operable to deposit a different second material.
[0032]
[0036] Figure 5 is a flowchart of method 500 for forming the optical device film 100. The optical device film 100 can be used for subsequent processing to form the devices 200a and 200b. For ease of explanation, Figure 5 will be described with reference to the PVD chamber 300 in Figure 3. However, it should be noted that PVD chambers other than the PVD chamber 300 in Figure 3 may also be used in conjunction with method 500.
[0033]
[0037] In operation 501, the optical device substrate 101 is placed on a substrate support within the PVD chamber 300. In operation 502, the first zone 108 of the range of zone 105 of the optical device film 100 is deposited. A first target 304 having a first material is set to a first power level, and a second target 306 having a second material is set to a second power level. In one embodiment, the first material of the first target 304 and / or the second material of the second target 306 include an oxygen-containing material or a nitrogen-containing material. The first material described and referenced herein has a first refractive index of about 2.0 or greater. The second material described and referenced herein has a second refractive index of less than 2.0. The first material includes, but is not limited to, oxides or nitrides of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb). The second material includes, but is not limited to, oxides or nitrides of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg). In another embodiment, an oxygen-containing gas or a nitrogen-containing gas is supplied to the processing space 305. In the embodiment, the deposited first and second materials react with the oxygen-containing gas or the nitrogen-containing gas to form the first zone 108 of the optical device film 100. In another embodiment, the optical device substrate 101 is maintained at a predetermined temperature between -20°C and 300°C.
[0034]
[0038] In one embodiment, the first concentration of the first material has its maximum concentration in the first zone 108 of the zone 105 range by applying the first power level to the first target 304 at the upper limit of the first power level. The upper limit of the first power level, corresponding to the highest power level, is supplied to the first target 304 during method 500. In another embodiment, the second concentration of the second material has its minimum concentration in the first zone 108 by not applying the second power level or by applying the second power level to the second target 306 at the lower limit of the second power level. The lower limit of the second power level, corresponding to the lowest power level, is supplied to the second target 306 during method 500. In another embodiment, the first concentration of the first material has its minimum concentration in the first zone 108 of the zone 105 range by not applying the first power level or by applying the first power level to the first target 304 at the lower limit of the first power level. During Method 500, a lower limit of a first power level, corresponding to the lowest power level, is supplied to the first target 304. In one embodiment, the second concentration of the second material has its maximum concentration in the first zone 108 by applying the second power level to the second target 306 at the upper limit of the second power level. During Method 500, an upper limit of the second power level, corresponding to the highest power level, is supplied to the second target 306. In yet another embodiment, the first and second concentrations may be controlled by setting a first power level supplied to the first target 304 of the first material and a second power level supplied to the second target 306 of the second material to different power levels between the upper and lower limits of the first and second power levels, by at least one of these.
[0035]
[0039] In operation 503, subsequent zones of the optical device film 100 are deposited until the final zone 109 of the zone 105 range is deposited. The deposition of subsequent zones includes setting a first power level provided to a first target 304 of the first material and a second power level provided to a second target 306 of the second material to different power levels for forming the optical device film 100. The optical device film 100 includes an oxygen concentration or nitrogen concentration, a first concentration profile of the first material, and a second concentration profile of the second material. In one embodiment, which can be combined with other embodiments described herein, the thickness 106 has a constant or substantially constant oxygen or nitrogen concentration throughout the entire zone 105 range of the optical device film 100.
[0036]
[0040] Figure 6 is a flow chart of method 600 for forming the optical device film 100. The optical device film 100 can be used for subsequent processing to form the devices 200a and 200b. For ease of explanation, Figure 6 will be described with reference to the PVD chamber 300 in Figure 3. However, it should be noted that PVD chambers other than the PVD chamber 300 in Figure 3 may also be used in conjunction with method 600.
[0037]
[0041] In operation 601, the optical device substrate 101 is placed on a substrate support in the PVD chamber 300. In operation 602, the first zone 108 of the zone 105 range of the optical device substrate 101 is deposited. A first target 304 having the first material is set to a first power level, and a precursor gas containing the second material is supplied at a precursor flow rate. In one embodiment, the precursor gas of the first material and / or the second material of the first target 304 includes an oxygen-containing material or a nitrogen-containing material. The first material described and referenced herein has a first refractive index of about 2.0 or greater. The second material described and referenced herein has a second refractive index of less than 2.0. The first material includes, but is not limited to, oxides or nitrides of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb). The second material includes, but is not limited to, oxides or nitrides of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg). In another embodiment, an oxygen-containing gas is supplied to the processing space 305. In another embodiment, an oxygen-containing gas or a nitrogen-containing gas is supplied to the processing space 305. In the embodiment, the deposited first and second materials react with the oxygen-containing gas or nitrogen-containing gas to form the first zone 108 of the optical device film 100. In another embodiment, the optical device substrate 101 is maintained at a predetermined temperature between approximately -20°C and 300°C.
[0038]
[0042] In one embodiment, the first concentration of the first material has its maximum concentration in the first zone 108 of the zone 105 range by applying the first power level to the first target 304 at the upper limit of the first power level. The upper limit of the first power level, corresponding to the highest power level, is supplied to the first target 304 during method 600. In another embodiment, the second concentration of the second material has its minimum concentration in the first zone 108 by not flowing the precursor gas or by flowing the precursor gas at the lowest flow rate during method 600. In yet another embodiment, the first concentration of the first material has its minimum concentration in the first zone 108 of the zone 105 range by not applying the first power level or by applying the first power level to the first target 304 at the lower limit of the first power level. The lower limit of the first power level, corresponding to the lowest power level, is supplied to the first target 304 during method 600. In one embodiment, the second concentration of the second material has its maximum concentration in the first zone 108 by flowing the precursor gas at the maximum flow rate during method 600 and during method 500. In yet another embodiment, the first and second concentrations can be controlled during method 600 by changing the first power level supplied to the first target 304 of the first material and by changing the flow rate of the precursor gas.
[0039]
[0043] In operation 603, subsequent zones of the optical device film 100 are deposited until the final zone 109 of the zone 105 range is deposited. The deposition of subsequent zones includes at least one of increasing or decreasing a first power level supplied to a first target of the first material, and increasing or decreasing the flow rate of a precursor gas containing the second material, to form an optical device film 100 having an oxygen concentration or nitrogen concentration, a first concentration profile of the first material, and a second concentration profile of the second material. In one embodiment, which can be combined with other embodiments described herein, the thickness 106 has a constant or substantially constant oxygen or nitrogen concentration throughout the entire zone 105 range of the optical device film 100.
[0040]
[0044] Figure 7 is a flowchart of method 700 for forming the optical device film 100. The optical device film 100 can be used for subsequent processing to form the devices 200a and 200b. For ease of explanation, Figure 7 will be described with reference to the CVD chamber 400 in Figure 4. However, it should be noted that CVD chambers other than the CVD chamber 400 in Figure 4 may be used in conjunction with method 700.
[0041]
[0045] In operation 701, the optical device substrate 101 is placed on a substrate support in the CVD chamber 400. In operation 702, the first zone 108 of the zone 105 range of the optical device substrate 101 is deposited. The first gas has a first gas flow rate, and the second gas has a second gas flow rate. The first material of the first gas described and referenced herein has a first refractive index of about 2.0 or greater. The second material of the second gas described and referenced herein has a second refractive index of less than 2.0. In one embodiment, the precursor gas of the first material and / or second material of the first target 304 includes an oxygen-containing material or a nitrogen-containing material. In one embodiment, the optical device substrate 101 is maintained at a predetermined temperature between about -20°C and 300°C.
[0042]
[0046] In one embodiment, the first concentration of the first material is maximized in the first zone 108 of the range of zone 105 by flowing the first gas at the maximum flow rate during method 700. In another embodiment, the second concentration of the second material is minimized in the first zone 108 by not flowing the second gas or by flowing the second gas at the minimum flow rate during method 700. In yet another embodiment, the first concentration of the first material is minimized in the first zone 108 of the range of zone 105 by not flowing the first gas or by flowing the first gas at the minimum flow rate during method 700. In yet another embodiment, the second concentration of the second material is maximized in the first zone 108 by flowing the second gas at the maximum flow rate during method 700. In yet another embodiment, the first and second concentrations can be controlled during method 700 by changing the flow rate of the first gas and changing the flow rate of the second gas.
[0043]
[0047] In operation 703, subsequent zones of the optical device film 100 are deposited until the final zone 109 of the zone 105 range is deposited. The deposition of subsequent zones includes increasing or decreasing the first flow rate of a first gas containing the first material, and increasing or decreasing the second flow rate of a precursor gas containing the second material, thereby forming an optical device film 100 having an oxygen concentration or nitrogen concentration, a first concentration profile of the first material, and a second concentration profile of the second material. In one embodiment, which can be combined with other embodiments described herein, the thickness 106 has a constant or substantially constant oxygen or nitrogen concentration throughout the entire zone 105 range of the optical device film 100.
[0044]
[0048] In summary, this specification describes an optical device film having an oxygen concentration or nitrogen concentration, a first concentration profile of a first material, and a second concentration profile of a second material, and a method for forming an optical device film. In stages By incorporating first and second materials at different concentrations, the optical properties of the optical device film, i.e., the refractive index, can be altered. In one embodiment, the method includes controlling a first concentration profile and a second concentration profile by increasing or decreasing a first power level supplied to a first target of the first material, or increasing or decreasing a second power level supplied to a second target of the second material. In another embodiment, the method includes controlling a first concentration profile and a second concentration profile by increasing or decreasing a first power level supplied to a first target of the first material, and increasing or decreasing the flow rate of a precursor gas containing the second material. In yet another embodiment, the method includes controlling a first concentration profile and a second concentration profile by increasing or decreasing a first flow rate of a first gas containing the first material, and increasing or decreasing a second flow rate of a second gas containing the second material.
[0045]
[0049] The above description applies to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.
Claims
1. Waveguide, It includes a plurality of optical device structures arranged on an optical device substrate, and the optical device structures of the plurality of optical device structures are A thickness, which is divided into a series of zones, from the first zone adjacent to the first surface substantially corresponding to 0% of the thickness to the final zone adjacent to the second surface substantially corresponding to 100% of the thickness, and each of the series of zones has a zone thickness. The oxygen concentration or nitrogen concentration in each of the series of zones of the plurality of optical device structures, wherein the oxygen concentration or nitrogen concentration maintained across all of the series of zones, A first material having a first refractive index of 2.0 or higher, having a first concentration profile across the entire series of zones, wherein the first zone has a minimum concentration of 0 atomic percent of the first material, the final zone has a maximum concentration of the first material, and in the first concentration profile, the first concentration of each zone located immediately above the preceding zone is equal to or greater than the first concentration of the preceding zone. A second material having a second refractive index of less than 2.0, having a second concentration profile across the entire series of zones, wherein the second concentration profile is continuously different from the first concentration profile, the first zone has the maximum concentration of the second material, the final zone has the minimum concentration of 0 atomic percent of the second material, and in the second concentration profile, the second concentration of each zone located immediately above the preceding zone is less than or equal to the second concentration of the preceding zone. A waveguide having
2. The waveguide according to claim 1, wherein the zone thickness is 0.001% to 50% of the thickness.
3. The waveguide according to claim 1, wherein the first material comprises an oxide or nitride of titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or niobium (Nb).
4. The waveguide according to claim 1, wherein the second material comprises an oxide or nitride of silicon (Si), aluminum (Al), hafnium (Hf), scandium (Sc), tin (Sn), yttrium (Y), praseodymium (Pr), or magnesium (Mg).
5. The waveguide according to claim 1, wherein the oxygen concentration is 66.67 atomic percent within ±10%.
6. The first zone of the series of zones adjacent to the first surface is The maximum concentration of the first material and The minimum concentration of 0 atomic percent of the second material and including and The final zone of the series of zones adjacent to the second surface is The minimum concentration of the first material at 0 atomic percent, The maximum concentration of the second material and A waveguide according to claim 1, including the following:
7. In the first concentration profile, the first concentration of each zone located immediately above the preceding zone is less than or equal to the first concentration of the preceding zone, and In the second concentration profile, the second concentration of each zone located immediately above the preceding zone is equal to or greater than the second concentration of the preceding zone. Waveguide according to claim 6.
8. The first concentration profile has the maximum concentration in the first zone of the series of zones, the first concentration profile has the minimum concentration at the midpoint of the series of zones, and the first concentration profile has the maximum concentration in the final zone of the series of zones, The second concentration profile has the minimum concentration in the first zone of the series of zones, the second concentration profile has the maximum concentration at the midpoint of the series of zones, and the second concentration profile has the minimum concentration in the final zone of the series of zones. Waveguide according to claim 1.
9. The first concentration profile has the minimum concentration in the first zone of the series of zones, the first concentration profile has the maximum concentration at the midpoint of the series of zones, and the first concentration profile has the minimum concentration in the final zone of the series of zones. The second concentration profile has the maximum concentration in the first zone of the series of zones, the second concentration profile has the minimum concentration at the midpoint of the series of zones, and the second concentration profile has the maximum concentration in the final zone of the series of zones. Waveguide according to claim 1.
10. The waveguide according to claim 1, wherein the plurality of optical device structures are arranged within the waveguide.
11. The waveguide according to claim 10, wherein the plurality of optical device structures are inclined with respect to the first surface of the plurality of optical device structures.
12. The waveguide according to claim 10, wherein the difference in oxygen concentration or nitrogen concentration between each of the series of zones is 10% atomic percentage.