Mounting component

Abstract

This placement member includes: a plate-shaped base part; and a plurality of protrusions which are present on the main surface of the base part. Each of the protrusions includes a placement surface for placing an examination object or a processing object. The placement surface includes: an inner circumference-side curved surface which is recessed; and an outer circumference-side protruding section that is connected to the inner circumference-side curved surface.

Description

Technical Field

[0001] The present invention relates to a mounting member.

Background Art

[0002] In recent years, in the semiconductor manufacturing process, with the high integration and high performance of semiconductor elements, improvement of etching technology has been demanded. In a semiconductor manufacturing apparatus such as a plasma etching apparatus, after a wafer is placed and fixed on a sample stage, an electrostatic chuck apparatus as described in Patent Document 1, for example, is used as an apparatus for maintaining the wafer at a desired temperature.

[0003] However, in a conventional electrostatic chuck apparatus as described in Patent Document 1, the entire top surface of the protrusion contacts the back surface of the wafer. Therefore, if there are particles between the top surface of the protrusion and the back surface of the wafer, there is a risk of the particles adhering to the back surface of the wafer. When particles adhere to the back surface of the wafer, the wafer is likely to be damaged.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Means for Solving the Problems

[0005] The mounting member according to the present disclosure includes a flat base portion and a plurality of protrusions on the main surface of the base portion. The protrusion has a mounting surface for mounting an inspection object or a processing object. The mounting surface includes a concave inner peripheral side curved surface and an outer peripheral side convex portion connected to the inner peripheral side curved surface. The upper surface of the outer protrusion is curved.

[0006] The manufacturing method of the mounting member according to the present disclosure has an average particle diameter (D 50The process includes the steps of: granulating raw material powder, which has been pulverized to a size of 1.5 μm or less, to obtain granules; filling the granules into a mold and obtaining a plate-shaped molded body using a cold isostatic molding method; firing the plate-shaped molded body to obtain a plate-like body; forming a mask on one main surface of the plate-like body in the area that will become a protrusion, and then blasting to form a recess and a convex portion which is the remaining part of the recess; grinding or polishing the top surface of the convex portion; and heat-treating the plate-like body in an atmospheric environment.

[0007] The exposure apparatus according to this disclosure includes a station for storing a cassette containing the above-mentioned mounting member, a suction unit for positioning the mounting member, an exposure stage for exposure processing of an object to be processed, a first transport member for taking the mounting member out of the cassette and transporting it to the suction unit, and a second transport member for transporting the mounting member from the suction unit to the exposure stage. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic diagram showing the main parts of a mounting member according to one embodiment of the present disclosure. [Figure 2] This is an electron microscope image showing one of the protrusions shown in Figure 1. [Figure 3] This is a schematic diagram illustrating the protrusion shown in Figure 2. [Figure 4] This is a graph profiling the protrusion shown in Figure 2. [Figure 5] This is a plan view of a substrate holder using a mounting member according to another embodiment of the present disclosure. [Figure 6] This is a cross-sectional view illustrating the cross-section obtained by cutting along the line A-A' shown in Figure 5. [Modes for carrying out the invention]

[0009] In conventional electrostatic chuck devices such as the one described in Patent Document 1, the entire top surface of the protrusion comes into contact with the back surface of the wafer, as described above. Therefore, if particles are present between the top surface of the protrusion and the back surface of the wafer, they may adhere to the back surface of the wafer. When particles adhere to the back surface of the wafer, the wafer becomes more susceptible to damage.

[0010] The mounting member relating to this disclosure, having the above-described configuration, can reduce the adhesion of particles to the back surface of an object to be inspected or processed, such as a semiconductor wafer.

[0011] A mounting member according to one embodiment of the present disclosure will be described with reference to Figures 1 to 6. The mounting member 10 according to one embodiment shown in Figure 1 includes a base portion 1 and a plurality of protrusions 2. Figure 1 is a schematic diagram showing the main parts of the mounting member 10 according to one embodiment.

[0012] The base 1 is not limited as long as it has a flat plate shape, and its thickness, size, etc., are appropriately set according to the device on which the mounting member 10 is provided. When viewed from above, the base 1 may be rectangular or circular.

[0013] The base 1 is formed of, for example, ceramics. Examples of ceramics forming the base 1 include ceramics mainly composed of aluminum oxide, silicon carbide, or silicon carbonitride. Ceramics mainly composed of these components have good wear resistance and can be used for a long period of time.

[0014] In this specification, "main component" refers to a component that accounts for 80% or more by mass when the total amount of components constituting the ceramic is set to 100% by mass. The identification of each component contained in the ceramic is performed using an X-ray diffractometer that uses CuKα rays, and the content of each component can be determined, for example, by an ICP (Inductively Coupled Plasma) emission spectrometer or an X-ray fluorescence analyzer.

[0015] On the main surface of the base 1, as shown in FIG. 1, a plurality of protrusions 2 are located. Like the base 1, the protrusions 2 are formed of ceramics such as ceramics mainly composed of aluminum oxide, silicon carbide, or silicon carbonitride. The base 1 and the protrusions 2 are integrally formed, for example, from raw materials having the same main component.

[0016] As shown in FIGS. 2 and 3, the protrusion 2 has a placement surface 3 for placing a test object or a processed object (hereinafter, the test object and the processed object may be collectively referred to as a placed object). covered The test object is, for example, a semiconductor wafer on which a plurality of semiconductor chips are formed or other electronic devices, and the electrical characteristics thereof are the inspection target. The processed object is, for example, a semiconductor wafer on which various processes such as an exposure process and a film forming process are performed. FIG. 2 is an electron micrograph showing one of the protrusions shown in FIG. 1. FIG. 3 is a schematic diagram schematically showing the protrusion shown in FIG. 2. The placement surface 3 includes an inner peripheral side curved surface 3a and an outer peripheral side convex portion 3b.

[0017] The inner peripheral side curved surface 3a has a concave shape and is a recessed portion on the inner side of the placement surface 3. The inner peripheral side curved surface 3a is not limited as long as it is recessed even slightly in a concave shape, and the depth of the concave portion is appropriately set according to the height of the protrusion 2.The average value of the maximum depth of the inner peripheral side curved surface 3a starting from the top surface of the outer peripheral side convex portion 3b described later may be 20 μm or more and 50 μm or less. Further, the coefficient of variation of the maximum depth of the inner peripheral side curved surface 3a starting from the top surface of the outer peripheral side convex portion 3b may be 0.02 or less. If the coefficient of variation is 0.02 or less, the depth of the inner peripheral side curved surface 3a is substantially constant and the variation in depth is small. Since the inner peripheral side curved surface 3a has a concave shape, it does not contact the placed object.

[0018] The outer peripheral convex portion 3b is a portion connected to the inner peripheral curved surface 3a. Specifically, it corresponds to the outer wall surface for forming the inner peripheral curved surface 3a. The top surface of the outer peripheral convex portion 3b is the portion that contacts the placed object. The inner peripheral curved surface 3a means a curved surface included in the region within 2 / 3 of the maximum depth upward from the deepest position of the concave portion and perpendicular to the main surface. The outer peripheral convex portion 3b means the outer region that is connected to the inner peripheral curved surface 3a and deviates from the above-mentioned 2 / 3.

[0019] Since the placement surface 3 includes the inner peripheral curved surface 3a and the outer peripheral convex portion 3b, the placement member 10 can support the placed object with the outer peripheral convex portion 3b. As a result, the contact area between the back surface of the object to be processed and the placement surface 3 decreases, so that the adhesion of particles generated by contact with the back surface of the placed object can be reduced. Even if fine particles accumulate on the inner peripheral curved surface 3a, the adhesion of the particles to the back surface can be reduced by the gap generated between the inner peripheral curved surface 3a and the back surface of the placed object. Furthermore, since the outer peripheral convex portion 3b is connected to the inner peripheral curved surface 3a, stress concentration inside the outer peripheral convex portion 3b can be reduced. As a result, cracks starting from the inner peripheral curved surface 3a or the outer peripheral convex portion 3b are unlikely to occur even when repeatedly exposed to high-temperature environments and low-temperature environments.

[0020] As shown in FIGS. 2 and 3, the base 1 may have an annular recess 4 extending in the depth direction from the main surface around the protrusion 2. The radial width of the recess 4 is preferably smaller than the equivalent diameter of the circle of the outer peripheral convex portion 3b. The depth of the recess 4 is appropriately set according to the thickness of the base 1 so as not to penetrate the base 1.

[0021] By having such a recess 4, the placement member 10 can easily capture floating particles by the recess 4. Furthermore, it is possible to suppress the captured particles from floating again. If the radial width of the recess 4 is smaller than the equivalent diameter of the circle of the outer peripheral convex portion 3b, the volume of the recess 4 is suppressed. As a result, the rigidity of the base 1 can also be maintained.

[0022] The average value of the curvature of the inner circumferential curved surface 3a is not limited and may be, for example, 0.004 (1 / μm) or more and 0.008 (1 / μm) or less. This curvature is an approximate value obtained by the least squares method. If the average value of the curvature of the inner circumferential curved surface 3a is 0.004 (1 / μm) or more, the depth of the deepest part of the inner circumferential curved surface 3a increases. Therefore, the volume that can accommodate fine particles increases. As a result, the adhesion of particles to the back surface of the mounted object can be further reduced. On the other hand, if the average value of the curvature of the inner circumferential curved surface 3a is 0.008 (1 / μm) or less, sufficient thickness from the back surface of the base 1 is secured. As a result, the rigidity of the base 1 can be maintained more efficiently. In this way, by setting the average curvature of the inner circumferential curved surface 3a to 0.004 (1 / μm) or more and 0.008 (1 / μm) or less, it is possible to maintain the rigidity of the base 1 while also reducing the adhesion of particles to the back surface of the mounted object.

[0023] The upper surface of the outer peripheral protrusion 3b includes a top surface that contacts the object to be mounted, and may be flat or curved. In particular, if the upper surface of the outer peripheral protrusion 3b is curved, the contact area between the object to be mounted and the top surface of the outer peripheral protrusion 3b becomes smaller. As a result, the adhesion of particles caused by contact between the back surface of the object to be mounted and the top surface of the outer peripheral protrusion 3b can be further reduced.

[0024] Figure 4 is a graph profiling the protrusion 2 shown in Figure 2. As shown in Figure 4, the enlarged profile of the upper surface of the outer peripheral protrusion 3b (part A in the graph) shows that the upper surface of the outer peripheral protrusion 3b is curved.

[0025] If the upper surface of the outer circumferential protrusion 3b is curved, the average value of the curvature of the upper surface of the outer circumferential protrusion 3b may be greater than the average value of the curvature of the inner circumferential curved surface 3a. When the average value of the curvature of the upper surface of the outer circumferential protrusion 3b is greater than the average value of the curvature of the inner circumferential curved surface 3a, stress concentration on the inner circumferential curved surface 3a can be reduced, and the contact area between the outer circumferential protrusion 3b and the object to be supported can also be reduced.

[0026] If the upper surface of the outer periphery protrusion 3b is curved, the average value of the curvature of the upper surface may be between 0.1 (1 / μm) and 10 (1 / μm). This curvature is an approximate value obtained by the least squares method. If the average value of the curvature of the upper surface is 0.1 (1 / μm) or more, the contact area between the back surface of the object to be placed and the top surface of the outer periphery protrusion 3b becomes smaller. As a result, the adhesion of particles caused by contact between the back surface of the object to be placed and the top surface of the outer periphery protrusion 3b can be further reduced. On the other hand, if the average value of the curvature of the upper surface is 10 (1 / μm) or less, the shedding of particles from the outer periphery protrusion 3b caused by contact between the back surface of the object to be placed and the top surface of the outer periphery protrusion 3b can be reduced. As a result, the risk of particles floating due to shedding adhering to the object to be placed is reduced.

[0027] The curvature of the upper surfaces of the inner circumferential curved surface 3a and the outer circumferential protrusion 3b can be measured using a shape analysis laser microscope (Keyence Corporation, ultra-deep color 3D shape measuring microscope (VK-X1100 or its successor)). The measurement conditions are as follows: coaxial illumination, 480x magnification, and a measurement range including the upper surfaces of the inner circumferential curved surface 3a and the outer circumferential protrusion 3b, for example, 710 μm × 533 μm per measurement location. A line to be measured is drawn on the diameter of the protrusion 2, and profile measurements are performed for each measurement range. The length of each line to be measured is, for example, 200 μm to 300 μm, which corresponds to the equivalent circular diameter of the outer circumferential protrusion 3b. At least eight measurement ranges are set, resulting in a total of eight lines to be measured. The curvature of the upper surfaces of the inner circumferential curved surface 3a and the outer circumferential protrusion 3b can be determined from the measured values ​​of these eight lines, and their respective average values ​​can be calculated.

[0028] The cutting level difference (Rδc1), which represents the difference between the cutting level at a 25% load length ratio on the roughness curve of the outer peripheral protrusion 3b and the cutting level at a 75% load length ratio on the roughness curve, may be 0.7 μm or less (excluding 0 μm). If the cutting level difference (Rδc1) is 0.7 μm or less, detachment from the outer peripheral protrusion 3b is further reduced. As a result, the risk of particles floating due to detachment adhering to the object on which it is placed is further reduced.

[0029] The cutting level difference (Rδc1) can be measured in accordance with JIS B 0601-2001 using a shape analysis laser microscope (Keyence Corporation, ultra-deep color 3D shape measuring microscope (VK-X1000 or its successor)). The measurement conditions are as follows: coaxial illumination, magnification of 480x, no cutoff value λs, a cutoff value λc of 0.08 mm, termination effect correction enabled, and a measurement range of 710 μm × 533 μm per location.

[0030] For each measurement range, draw the circumference to be measured along the upper surface of the inner curved surface 3a of the outer convex portion 3b, and perform line roughness measurement. The length of each circumference to be measured is, for example, 460 μm. At least 8 measurement ranges are set, in which case a total of 8 lines will be measured.

[0031] The substrate holder 20 shown in Figures 5 and 6 comprises a mounting member 10 on which a rectangular plate-shaped workpiece S (shown as a long dashed line in Figure 5) is placed, a substrate contact portion 11, and a pressing member 12.

[0032] The mounting member 10 includes a flat base portion 1 and a plurality of protrusions 2 on the main surface 1a of the base portion 1. The protrusions 2 have a mounting surface 3 for placing the object to be processed S on, and the plurality of protrusions 2 are surrounded by an outer peripheral portion 5. The object to be processed S is attracted to and placed on the mounting surface 3 by exhaust from a plurality of exhaust holes 6 arranged at equal intervals along a virtual circumference C within the first region 10a having the plurality of protrusions 2.

[0033] The substrate contact portion 11 contacts the side surface of the object to be processed S to position the object to be processed S. In Figure 5, pin-shaped and rectangular plate-shaped substrate contact portions 11 are shown. However, the substrate contact portion 11 is not limited to these shapes and may be the inner surface of the recess provided in the mounting member 10 or a protrusion that extends from the inner surface.

[0034] The pressing member 12 is also called a leaf spring and comprises a deformable portion 12a and two fixed portions 12b. The deformable portion 12a has a facing surface that faces the workpiece S and has elasticity in the vertical direction in Figure 5. The two fixed portions 12b are connected to the deformable portion 12a and are located spaced apart on both sides of the deformable portion 12a.

[0035] The mounting member 10 includes a second region 10b on which the pressing member 12 is mounted. The second region 10b includes a stepped surface 10c located lower than the mounting surface 3 and an inner surface 10d intersecting the stepped surface 10c. At least the portion of the inner surface 10d facing the deformed portion 12a may be curved downward.

[0036] Furthermore, the cutting level difference (Rδc2), which represents the difference between the cutting level at a 25% load length ratio on the roughness curve of the main surface of the base 1 and the cutting level at a 75% load length ratio on the roughness curve, and the cutting level difference (Rδc3), which represents the difference between the cutting level at a 25% load length ratio on the roughness curve of the upper surface of the outer periphery 5 and the cutting level at a 75% load length ratio on the roughness curve, may both be between 0.2 μm and 2.2 μm. If the cutting level difference (Rδc2) and cutting level difference (Rδc3) are within this range, detachment from the main surface of the base 1 and the upper surface of the outer periphery 5 is further reduced. As a result, the risk of particles floating due to detachment adhering to the workpiece can be further reduced.

[0037] The cutting level difference (Rδc2) and cutting level difference (Rδc3) can be measured in accordance with JIS B 0601-2001 using a shape analysis laser microscope (Keyence Corporation, ultra-deep color 3D shape measuring microscope (VK-X1000 or its successor)). The measurement conditions are as follows: coaxial illumination, magnification of 240x, no cutoff value λs, cutoff value λc of 0.08 mm, termination effect correction enabled, and a measurement range of 1428 μm × 1070 μm per location.

[0038] For each measurement range, draw four straight lines along the longitudinal direction of the range and perform line roughness measurement. The length of each line to be measured is, for example, 1280 μm. Set at least three measurement ranges, in which case there will be a total of 12 lines to be measured.

[0039] The method for manufacturing the mounting member according to this disclosure is not limited, and for example, the mounting member according to this disclosure can be obtained by the following steps (a) to (f). Step (a): Average particle diameter (D 50 A process of granulating raw material powder, which has been ground down to a size of 1.5 μm or less, to obtain granules. Step (b): A step of filling a mold with granules and obtaining a plate-shaped molded body using a cold isostatic molding method. Step (c): A step of firing a plate-shaped molded body to obtain a plate-shaped body. Step (d): A step in which a mask is formed on one main surface of the plate-like body in the portion that will become a protrusion, and then blast processing is performed to form a recess and a convex portion which is the remaining part of the recess. Process (e): A process of grinding or polishing the top surface of the convex portion. Process (f): A process of heat-treating a plate-shaped body in an atmospheric environment.

[0040] In step (a), the raw material powder is granulated. Examples of raw material powders include powders mainly composed of aluminum oxide, silicon carbide, or silicon carbonitride. When the main component of the powder is aluminum oxide (purity of 99.9% by mass or higher) )、 The powders of magnesium hydroxide, silicon dioxide, and calcium carbonate are placed in a grinding mill along with a solvent (deionized water) to obtain an average particle size (D 50 The powder is ground until the particles are 1.5 μm or less. Here, the magnesium hydroxide powder content in the total 100% by mass of the above powder is 0.43% to 0.53% by mass, the silicon dioxide powder content is 0.02% to 0.04% by mass, the calcium carbonate powder content is 0.02% to 0.071% by mass, and the remainder is aluminum oxide powder and unavoidable impurities.

[0041] After adding an organic binder and a dispersant to disperse the aluminum oxide powder to the pulverized powder and mixing to obtain a slurry, granulation can be performed using a granulator such as a rolling granulator, spray granulator, or compression granulator. Examples of spray granulators include nozzle spray granulators and disc spray granulators. The average particle size after granulation (D 50 The particle size is not limited and may be, for example, 50 μm or more and 150 μm or less. Examples of organic binders include acrylic emulsion, polyvinyl alcohol, polyethylene glycol, and polyethylene oxide.

[0042] Next, in step (b), the granules obtained in step (a) are molded to obtain a plate-shaped molded body. The molding is carried out using a cold isohydrostatic molding method. The molding pressure is, for example, 78 MPa to 196 MPa.

[0043] Next, in step (c), the plate-shaped molded body obtained in step (b) is fired to obtain a plate-like body. The firing is carried out, for example, in an air atmosphere at a temperature of 1500°C to 1700°C for 4 to 6 hours. In this way, a plate-like body made of ceramics is obtained. This ceramic plate-like body becomes the base 1 and the projection 2 by going through the following steps (d) and (e).

[0044] Next, in step (d), a recess and a convex portion, which is the remainder of the recess, are formed on one main surface of the plate-like body obtained in step (c). Specifically, a mask can be formed on one main surface of the obtained plate-like body in the area that will become the protrusion 2, and then blast processing can be performed. The processing time is, for example, 10 minutes or more and 20 minutes or less. When blast processing, silicon carbide abrasive grains with a grit size number of F80, F90, F100, or F120 as described in JIS R 6001-1:2017 (ISO 8486-1:1996) can be used. By blast processing, the inner bottom surface of the recess becomes the main surface of the base 1, and the convex portion becomes the precursor of the protrusion 2. The outer circumference of the recess becomes the outer circumference surrounding the multiple protrusions 2.

[0045] As shown in Figures 2 and 3, when obtaining a mounting member 10 having a recessed portion 4, after forming the protrusion by blasting, the blasting conditions are adjusted so that a processed and altered layer remains around the protrusion, for example, by performing blasting at a low power for a long period of time, for example, 15 minutes or more.

[0046] Next, in step (e), the top surface of the convex portion formed in step (d) is ground or polished. Grinding is performed, for example, using a surface grinding machine with a diamond grinding wheel. Polishing, on the other hand, is performed, for example, using a double-sided lapping machine with diamond abrasive grains. When polishing, the average particle size (D 50 ) 4 μm to 20 μm below A slurry or paste containing diamond abrasive particles can be supplied to the lapping machine. If necessary, the average particle size (D 50 After polishing with diamond abrasive grains of 20 μm, the average particle size (D 50 The surface may be polished using small diamond abrasive grains, for example, 10 μm and 4 μm in size. Examples of materials for the lapping machine include cast iron and tin. The top surface of the convex portion, as well as the upper surface of the outer circumference, may be ground or polished.

[0047] Next, in step (f), after grinding or polishing the top surface of the protrusion in step (e), the plate-like body is heat-treated in an atmospheric environment. The conditions for the heat treatment are not limited; for example, it may be performed in an atmospheric environment at a temperature of 1300°C to 1500°C for 1 to 3 hours. By altering the area around the protrusion in step (d), stress relaxation and accompanying deformation occur around this protrusion during the heat treatment in step (f). As a result, a projection having a support surface including an inner circumferential curved surface and an outer circumferential protrusion can be obtained.

[0048] By performing the above step (f) in an atmospheric environment, if the mounting member 10 is a non-oxide material (such as ceramics mainly composed of silicon carbide or silicon carbonitride), an oxide layer is formed on the surface of the mounting member 10, thereby improving particle reduction. Furthermore, if the mounting member 10 is an oxide material (such as aluminum oxide), it is possible to suppress the alteration (reduction) of the surface of the mounting member 10 and promote stress relaxation.

[0049] Furthermore, in step (e) above, the heights of the top surfaces of the multiple protrusions may be precisely aligned, and after the protrusions are created by performing step (f), grinding or polishing of the top surfaces of the protrusions may be omitted. In this case, if the mounting member 10 is a non-oxide material, the oxide layer formed on the surface in step (f) will not be removed and will be maintained. Therefore, particle reduction can be improved. If the mounting member 10 is an oxide material, the portion where surface alteration (reduction) is suppressed and stress relaxation is promoted in step (f) will not be removed and will be maintained. Therefore, degradation reduction and particle reduction can be improved.

[0050] In this way, a mounting member 10 according to one embodiment is obtained, which includes a base 1 and a plurality of protrusions 2. In step (d) above, the area around the protrusions is altered, and this alteration is used to create a mounting surface having an inner circumferential curved surface and an outer circumferential protrusion, but the method is not limited to this. For example, the step of altering the area around the protrusions in step (d) may be omitted, and in step (e), the top surface of the protrusions may be ground or polished using a tool with a rounded tip to create a depression in the top surface of the protrusions, thereby creating a mounting surface having an inner circumferential curved surface and an outer circumferential protrusion.

[0051] In step (d) above, the protrusions were created by blasting, but the method is not limited to this, and for example, they may be created by laser processing. That is, in step (d), after creating the protrusions by blasting or laser processing, blasting may be performed at low power for a long time to alter the material around the protrusions. Alternatively, in step (d), after creating the protrusions by blasting or laser processing, the top surface of the protrusions may be ground or polished using a tool with a rounded tip to create a depression. The mounting member 10 according to one embodiment is used, for example, as a component of semiconductor manufacturing equipment such as an exposure apparatus or a film deposition apparatus.

[0052] An example of the use of the mounting member 10 according to one embodiment will be described using an exposure apparatus as an example. The exposure apparatus according to one embodiment includes a station, a suction unit, an exposure stage, a first transport member, and a second transport member.

[0053] The station is a component for housing a cassette containing the mounting component 10. The suction unit is a component for positioning the mounting component 10. The exposure stage is a component for exposing the object to be processed. The first transport member is a transport arm consisting of, for example, a plate-like body comprising a support unit for supporting a substrate and a holding unit for holding the support unit, with the tip of the support unit branching into at least two branches. The first transport member is a component that, after inserting the support unit into the cassette, removes the mounting component 10 from the cassette and transports it to the suction unit. The second transport member is a component that transports the mounting component 10, which has been transported to the suction unit, to the exposure stage.

[0054] The mounting member according to this disclosure is not limited to the mounting member 10 described above. For example, the mounting member 10 described above has a recessed portion 4 around the projection 2. However, the mounting member according to this disclosure does not have to include the recessed portion 4. [Explanation of symbols]

[0055] 1 base 2 Protrusion 3. Mounting surface 3a Inner curved surface 3b Outer protrusion 4. Recessed area 5. Outer perimeter 6 exhaust holes 10 Mounting Member 11 Substrate contact portion 12 Pressing member 20. Circuit board holder

Claims

1. It includes a flat base and a plurality of protrusions on the main surface of the base, The projection has a mounting surface for placing the object to be inspected or processed, The mounting surface includes a concave inner circumferential curved surface and an outer circumferential protrusion connected to the inner circumferential curved surface. The upper surface of the outer circumferential protrusion is curved. Mounting component.

2. It includes a flat base and a plurality of protrusions on the main surface of the base, The projection has a mounting surface for placing the object to be inspected or processed, The mounting surface includes a concave inner circumferential curved surface and an outer circumferential protrusion connected to the inner circumferential curved surface. The projection has an annular recess extending in the depth direction from the main surface of the base, and the radial width of the recess is smaller than the circular equivalent diameter of the outer peripheral protrusion. Mounting component.

3. The mounting member according to claim 1 or 2, wherein the average value of the curvature of the inner circumferential curved surface is 0.004 (1 / μm) or more and 0.008 (1 / μm) or less.

4. The mounting member according to claim 1, wherein the average value of the curvature of the upper surface of the outer peripheral protrusion is greater than the average value of the curvature of the inner peripheral curved surface.

5. The mounting member according to claim 1 or 2, wherein the maximum depth of the inner circumferential curved surface, starting from the top surface of the outer circumferential protrusion, is smaller than the equivalent circular diameter of the outer circumferential protrusion.

6. A process to obtain granules by granulating raw material powder that has been ground down to an average particle size (D50) of 1.5 μm or less, The process involves filling a mold with the aforementioned granules and obtaining a plate-shaped molded body using a cold isostatic molding method. The process of firing the aforementioned plate-shaped molded body to obtain a plate-shaped body, The process involves forming a mask on one main surface of the plate-like body in the portion that will become a protrusion, and then performing a blasting process to form a recess and a convex portion which is the remaining part of the recess, A step of grinding or polishing the top surface of the convex portion, A step of heat-treating the plate-like body in an atmospheric environment, A method for manufacturing a mounting member according to claim 1 or 2, including the method described in claim 1 or 2.

7. A station for storing a cassette containing a mounting member according to claim 1 or 2, A suction part for positioning the mounting member, An exposure stage for exposing the object to be processed, A first transport member that removes the aforementioned mounting member from the cassette and transports it to the suction part, A second transport member transports the aforementioned mounting member from the adsorption unit to the exposure stage, Exposure apparatus, including

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