Measuring device, exposure device, and method for manufacturing articles

Abstract

To provide a measuring apparatus that can satisfy both improvement of alignment accuracy and downsizing.SOLUTION: A measuring apparatus 50 according to the present invention comprises: an illumination optical system which guides light from a light source 511 to an illumination region including a first region in which a substrate mark 62 on a substrate surface of a substrate 6 is formed; a photodetector 524 which receives light from the illumination region; and an imaging optical system which guides light from the illumination region to the photodetector 524. On an optical path of light between the light source 511 and the substrate 6, a plurality of reference marks 515 at least two of which are arranged at positions different from each other in a travel direction of light are provided.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a measuring device, and more particularly to a measuring device suitable for aligning substrates in an exposure apparatus. [Background technology]

[0002] Conventionally, in an exposure apparatus, in order to align a substrate, the position of a mark formed on the substrate surface is measured by imaging the mark in a plane parallel to the substrate surface. Furthermore, it is known that the measurement position of a mark formed on the substrate surface of a substrate in a plane parallel to the substrate surface may change depending on the height of the mark in a direction perpendicular to the substrate surface.

[0003] Patent Document 1 discloses an exposure apparatus that improves alignment accuracy by adjusting the height of the substrate when measuring the position of a mark formed on the substrate surface, by providing a focus measurement unit that measures the height of the substrate perpendicular to the substrate surface. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2021-81659 [Overview of the project] [Problems that the invention aims to solve]

[0005] The exposure apparatus disclosed in Patent Document 1 is larger because, in addition to the alignment mechanism for performing alignment, it also includes a focus measurement unit. Therefore, the present invention aims to provide a measuring device that can achieve both improved alignment accuracy and miniaturization. [Means for solving the problem]

[0006] The measuring device according to the present invention comprises an illumination optical system that guides light from a light source to an illumination region including a first region on the substrate surface of a substrate in which substrate marks are formed, a light-receiving element that receives light from the illumination region, and an imaging optical system that guides light from the illumination region to the light-receiving element, wherein at least two reference marks are provided on the optical path of light between the light source and the substrate, and are positioned at mutually different locations in the direction of light propagation. The system includes a calculation unit that calculates the position of a substrate mark in a first plane parallel to the substrate surface from the image of the substrate mark formed on the light-receiving element, and also calculates the position of a substrate mark in a first direction perpendicular to the substrate surface from the images of a plurality of reference marks formed on the light-receiving element. The calculation unit calculates the position of the substrate mark in the first plane and in each of the first directions for each of the plurality of positions in the first direction of the substrate, thereby obtaining a correlation between the position of the substrate mark in the first direction and the position of the substrate mark in the first plane. The calculation unit then corrects the position of the substrate mark in the first plane based on the obtained correlation. It is characterized by the following. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a measuring device that can achieve both improved alignment accuracy and miniaturization. [Brief explanation of the drawing]

[0008] [Figure 1] An exposure apparatus equipped with an alignment mechanism according to the first embodiment, and a schematic cross-sectional view of the alignment mechanism. [Figure 2] Enlarged front view of the reference mark substrate, substrate, and image sensor in the alignment mechanism according to the first embodiment. [Figure 3] This figure shows the amount of light received at each pixel position on the image sensor surface in the alignment mechanism according to the first embodiment. [Figure 4] A figure showing the approximate curve obtained in the alignment mechanism according to the first embodiment. [Figure 5] An enlarged cross-sectional view of the substrate near the illumination area in the alignment mechanism according to the first embodiment. [Figure 6] This figure shows an example of the correlation between the alignment position and focus position of the substrate mark group measured in the alignment mechanism according to the first embodiment. [Figure 7] Enlarged front view of the reference mark substrate, substrate, and image sensor in the alignment mechanism according to the second embodiment. [Figure 8] A schematic cross-sectional view of the alignment mechanism according to the third embodiment. [Modes for carrying out the invention]

[0009] Hereinafter, the measuring apparatus according to this embodiment will be described in detail based on the accompanying drawings. Note that the drawings shown below are drawn at a scale different from the actual one in order to facilitate understanding of this embodiment. Also, the embodiments shown below do not limit the invention according to the claims. Also, although a plurality of features are described in the embodiments shown below, not all of these plurality of features are essential for the invention, and the plurality of features may be arbitrarily combined.

[0010] [First Embodiment] Conventionally, when manufacturing a semiconductor device, a liquid crystal display element, etc. in a photolithography process, an exposure apparatus that transfers by projecting an image of a pattern formed on a mask onto a substrate has been used. Also, in an exposure apparatus, in order to accurately transfer the pattern formed on the mask onto the substrate, it is required to perform calibration of the overlapping position between the mask and the substrate, that is, alignment, with high precision.

[0011] As a mechanism for performing such alignment, conventionally, a through-the-lens (TTL) alignment mechanism and an off-axis alignment mechanism are known. The TTL alignment mechanism detects a mark formed on the substrate by irradiating the substrate with detection light having a wavelength different from that of the exposure light after passing the detection light through the projection optical system. On the other hand, the off-axis alignment mechanism is arranged at a position different from the projection optical system, and detects a mark formed on the substrate by irradiating the substrate with detection light having a wavelength different from that of the exposure light without passing the detection light through the projection optical system.

[0012] When detecting a mark formed on the substrate using such an alignment mechanism, if the mark is deviated from the best focus position due to differences in the type and height of the substrate, the contrast of the image of the detected mark will become low. And, there is a risk that the alignment accuracy may decrease due to a decrease in the contrast of the image of the mark.

[0013] Also, the acquired alignment measurement value may change according to the difference between the position where the mark is disposed and the position of the best focus. Therefore, conventionally, an exposure apparatus that measures the height of a substrate using a focus measurement unit and adjusts the height of the substrate when performing alignment is known.

[0014] In such a conventional exposure apparatus, in addition to the alignment mechanism, a focus measurement unit is further provided, so there are problems such as an increase in the size and cost of the apparatus and restrictions on the arrangement of the alignment mechanism. Therefore, an object of the present embodiment is to provide a measurement apparatus capable of measuring not only the alignment position but also the focus position of a mark formed on a substrate with the same optical system.

[0015] FIG. 1(a) shows a schematic cross-sectional view of an exposure apparatus 10 including an alignment mechanism 50 according to the first embodiment.

[0016] The exposure apparatus 10 is a scanning projection exposure apparatus that employs a so-called step-and-scan method in which exposure is performed while scanning a substrate 6. However, the exposure apparatus 10 is not limited to this, and may employ a step-and-repeat method (stepper) or other exposure methods.

[0017] Hereinafter, a direction perpendicular to the substrate surface of the substrate 6 is defined as the Z axis, a direction perpendicular to the plane of FIG. 1(a) in a plane parallel to the substrate surface of the substrate 6 is defined as the X axis, and a direction parallel to the plane of the drawing is defined as the Y axis.

[0018] The exposure apparatus 10 includes an illumination optical system 1, a mask stage 3, a projection optical system 4, an alignment mechanism 50 according to the present embodiment, a substrate stage 7, and a control unit 8. The exposure apparatus 10 may also be equipped with a through-the-lens alignment mechanism.

[0019] The illumination optical system 1 shapes the exposure light emitted from a light source (not shown) into a desired slit shape, such as an arc shape or a rectangular shape, and then irradiates a predetermined area on the mask 2 (original plate) at a predetermined magnification. The mask stage 3 holds the mask 2 and is configured so that its position is controlled by the control unit 8 based on measurement results from an interferometer (not shown).

[0020] The projection optical system 4 projects an image of the pattern formed on the mask 2 onto the substrate surface of the substrate 6 at a predetermined imaging magnification (for example, 1 / 2x or 1 / 4x). The substrate stage 7 holds the substrate 6 and is configured to have its position controlled by the control unit 8 based on measurement results from an interferometer (not shown).

[0021] The mask 2 and the substrate 6 are positioned optically conjugate to each other by the mask stage 3 and the substrate stage 7, respectively, and the mask stage 3 and the substrate stage 7 are driven in the XY plane in synchronization with each other. This allows the pattern formed on the mask 2 to be scanned while the substrate 6 is exposed, thereby transferring the pattern onto the substrate surface of the substrate 6.

[0022] In order to accurately transfer the pattern on mask 2 onto substrate 6, alignment between mask 2 and substrate 6 is necessary. Specifically, the alignment mechanism is used to measure the positions of alignment marks formed on the mask 2 and the substrate 6, and alignment is performed between the mask 2 and the substrate 6 based on the acquired position information of these marks.

[0023] The alignment mechanisms used here include, for example, through-the-lens alignment mechanisms and off-axis alignment mechanisms. In the exposure apparatus 10, the alignment mechanism 50 according to this embodiment is used to measure the position of the substrate 6 by detecting marks on the substrate 6 in order to perform alignment between the mask 2 and the substrate 6.

[0024] Figure 1(b) shows a schematic cross-sectional view of the alignment mechanism 50 according to this embodiment.

[0025] The alignment mechanism 50 according to this embodiment consists of an illumination unit 51 and a detection unit 52. The illumination unit 51 includes a light source 511, condenser lenses 512 and 513, a field diaphragm 514, a reference mark substrate 515, an aperture diaphragm 516, an objective lens 521, and a beam splitter 522.

[0026] The light source 511 is, for example, an LED, which emits illumination light. The illumination light may also be supplied from the light source 511 via a light guide, such as an optical fiber. The condenser lens 512 converts the degree of convergence of the illumination light emitted from the light source 511.

[0027] The field diaphragm 514 limits the diameter of the illumination light that passes through the condenser lens 512. The condenser lens 513 focuses the illumination light that has passed through the field aperture 514.

[0028] The beam splitter 522 is, for example, a half-prism, which reflects the illumination light that has passed through the condenser lens 513 toward the substrate 6. The aperture diaphragm 516 limits the diameter of the illumination light reflected by the beam splitter 522. The objective lens 521 focuses the illumination light that has passed through the aperture diaphragm 516 onto the substrate surface of the substrate 6.

[0029] The illumination unit 51 having the above configuration irradiates the substrate mark group 62 on the substrate 6 via the resist 61 with illumination light, thereby Kohler illuminating the substrate mark group 62 on the substrate 6.

[0030] In the illumination unit 51, the field aperture 514 is positioned in a position that is optically conjugate to the image formation with respect to the substrate mark group 62. The reference mark substrate 515 is positioned on the surface of the field aperture 514 at an angle with respect to the plane perpendicular to the direction of illumination light propagation, in other words, the plane perpendicular to the optical axis P of the illumination unit 51 (the second plane). The reason for this will be explained later.

[0031] The detection unit 52 includes an aperture diaphragm 516, an objective lens 521, a beam splitter 522, an imaging lens 523, an image sensor 524 (photodetector), and a calculation unit 526. In other words, the aperture diaphragm 516, objective lens 521, and beam splitter 522 are shared by the illumination unit 51 and the detection unit 52.

[0032] The objective lens 521 focuses the reflected light from the group of substrate marks 62 on the substrate 6. The aperture diaphragm 516 limits the diameter of the reflected light that passes through the objective lens 521.

[0033] The beam splitter 522 transmits the reflected light that has passed through the aperture diaphragm 516. The imaging lens 523 focuses the reflected light that has passed through the beam splitter 522 onto the image sensor surface 525 of the image sensor 524.

[0034] The image sensor 524 is, for example, a CCD camera or a line sensor, and the image sensor surface 525 is positioned on the substrate surface on the substrate 6, that is, in a position that is optically conjugate to the substrate mark group 62. The image sensor 524 then receives the reflected light that has passed through the imaging lens 523.

[0035] The detection unit 52, having the above configuration, focuses the reflected light from the substrate mark group 62 on the substrate 6 onto the image sensor surface 525 of the image sensor 524, thereby forming an image of the substrate mark group 62 on the image sensor surface 525.

[0036] As described above, in the alignment mechanism 50 according to this embodiment, the illumination optical system is composed of a condenser lens 512, a field diaphragm 514, a condenser lens 513, a beam splitter 522, an aperture diaphragm 516, and an objective lens 521. Then, the illumination optical system guides the light from the light source 511 to the illumination area, which includes the region on the substrate surface of the substrate 6 where the substrate mark group 62 is formed.

[0037] Furthermore, in the alignment mechanism 50 according to this embodiment, the imaging optical system is composed of an objective lens 521, an aperture diaphragm 516, a beam splitter 522, and an imaging lens 523. Then, the light reflected by the illumination area on the substrate surface of the substrate 6 is guided by the imaging optical system to the image sensor 524, where the image sensor 524 receives the light.

[0038] As will be described in detail later, the calculation unit 526 calculates the horizontal (XY direction) position and the vertical (Z direction) position of the substrate mark group 62 based on information about the position of the image captured by the image sensor 524 and the amount of light that forms the image. In the following, the horizontal position of the circuit board mark group 62 will be referred to as the alignment position, and the vertical position will be referred to as the focus position.

[0039] Figure 2(a) shows an enlarged front view of the reference mark substrate 515 provided in the alignment mechanism 50 according to this embodiment. Here, the two mutually orthogonal axes within a plane perpendicular to the X-axis of the inclined reference mark substrate 515 are defined as the Y' axis and the Z' axis.

[0040] As shown in Figure 2(a), the reference mark substrate 515 is provided with transparent sections 501, 502, 503, 504, 505, 506, 507, and 508, and a light-shielding section 509. Specifically, for example, by forming the reference mark substrate 515 out of glass and providing a chromium film in the region corresponding to the light-shielding portion 509 on the reference mark substrate 515, transparent portions 501 to 508, which are made of glass, can be provided.

[0041] Furthermore, as will be explained below, the transparent sections 501 to 507 are reference marks for detecting the focus position of the substrate mark group 62. On the other hand, the transparent portion 508 is a region through which light rays pass to illuminate the substrate mark group 62 in order to detect the alignment position of the substrate mark group 62.

[0042] Here, we will refer to standard marks 501 to 507 collectively as standard mark group 53. Furthermore, if the light-shielding portion 509 drawn on the reference mark substrate 515 is also used as a field aperture, it becomes unnecessary to provide a field aperture 514.

[0043] Figure 2(b) shows a front view of the illuminated area on the substrate surface of the substrate 6 illuminated by the alignment mechanism 50 according to this embodiment.

[0044] As shown in Figure 2(b), the illumination area on the substrate surface of the substrate 6 includes a first illumination area 611 (first area) and a second illumination area 627 (second area). The first illumination area 611 has high-reflectivity areas 621, 622, 623, 624, 625, and 626 formed within the low-reflectivity area. Furthermore, the second illumination area 627 is composed of a highly reflective section 627.

[0045] Specifically, by forming the substrate 6 from glass and providing a metal film at the positions of the high-reflectivity portions 621 to 627, it is possible to provide a low-reflectivity portion that is glass and a high-reflectivity portion that is a metal film. In this context, a low-reflectivity area refers to a region with a relatively low reflectivity compared to a high-reflectivity area, while a high-reflectivity area refers to a region with a relatively high reflectivity compared to a low-reflectivity area.

[0046] Furthermore, as will be explained below, the highly reflective portions 621 to 626 are each substrate marks for detecting the alignment position of the substrate mark group 62. On the other hand, the highly reflective area 627 is the region where the image of the reference mark group 53 is formed in order to detect the focus position of the substrate mark group 62.

[0047] In other words, the reflectance within the highly reflective section 627 is preferably uniform, as will be described later, in order to make the reflectance for each of the images of the reference marks 501 to 507 equal to each other. Here, we will refer to circuit board marks 621 to 626 collectively as circuit board mark group 62.

[0048] Furthermore, in the alignment mechanism 50 according to this embodiment, the reference mark substrate 515 is positioned such that the center of the illumination area on the substrate surface of the substrate 6 corresponds to the center of the reference mark substrate 515. In other words, the reference mark board 515 is positioned such that the center of the illumination light from the light source 511 reaches the center of the reference mark board 515. To put it another way, the optical axis P of the illumination unit 51 passes through the center of the reference mark substrate 515 and the center of the illumination area on the substrate surface of the substrate 6.

[0049] Figure 2(c) shows an enlarged front view of the image sensor surface 525 of the image sensor 524 provided in the alignment mechanism 50 according to this embodiment.

[0050] As shown in Figure 2(c), images 551, 552, 553, 554, 555, 556, and 557 of the reference marks 501 to 507 are formed on the image sensor surface 525 of the image sensor 524. In addition, images 561, 562, 563, 564, 565, and 566 of the substrate marks 621 to 626 are formed on the image sensor surface 525 of the image sensor 524.

[0051] In the alignment mechanism 50 according to this embodiment, the image sensor 524 is positioned such that the center of the illumination area on the substrate surface of the substrate 6 corresponds to the center of the image sensor surface 525. In other words, the image sensor 524 is positioned such that the center of the illumination light from the light source 511 reaches the center of the image sensor surface 525. To put it another way, the optical axis P passes through the center of the image sensor surface 525 of the image sensor 524.

[0052] Furthermore, in the alignment mechanism 50 according to this embodiment, the image sensor 524 is positioned such that the image sensor surface 525 is positioned at a position that is optically conjugate to the illumination area on the substrate surface of the substrate 6. As described above, the reference mark substrate 515 is positioned at an angle with respect to a plane perpendicular to the direction of illumination light propagation, in other words, perpendicular to the optical axis P of the illumination unit 51. Therefore, the planes containing the imaging positions of each of the reference marks 501 to 507 intersect with the image sensor surface 525. In other words, the conjugate surface of the reference mark substrate 515 formed by the illumination unit 51 is inclined with respect to the conjugate surface of the image sensor surface 525 formed by the detection unit 52.

[0053] In other words, in the direction of light propagation, the image formation positions of each of the reference marks 501 to 507 differ from each other, depending on the differences in their respective positions. Therefore, the amount of light that forms the images 551 to 557 of each of the reference marks 501 to 507 on the image sensor surface 525 of the image sensor 524 will be different from that of the other. In other words, the alignment mechanism 50 according to this embodiment is provided with a plurality of reference marks, at least two of which are positioned at different locations relative to each other in the direction of propagation of the illumination light.

[0054] Figure 3(a) shows the amount of light received at each pixel position in the Y direction on the image sensor surface 525 of the image sensor 524 when the substrate surface of the substrate 6 is at a first height Z1, i.e., a first position Z1 in the Z direction. Here, we assume that the pixel position in the X direction is fixed at X0 as shown in Figure 2(c).

[0055] As shown in Figure 3(a), at each pixel position in the Y direction on the image sensor surface 525 of the image sensor 524, the light intensity of the images 551 to 557 of the reference marks 501 to 507 and the light intensity of the images 561 to 563 of the substrate marks 621 to 623 are detected. Here, the light intensity of each of the images 551 to 557 changes depending on the optical specifications such as the line width of the reference marks 501 to 507, as well as the inclination of the reference mark substrate 515.

[0056] As shown in Figure 3(a), when the substrate surface of the substrate 6 is positioned at the first height Z1, the light intensity of image 554 is the greatest among images 551 to 557. This means that the imaging position of reference mark 504 among reference marks 501 to 507 is closest to the image sensor surface 525.

[0057] Furthermore, as shown in Figure 3(a), the light intensity of the image corresponding to a pixel position that is farther away from the pixel position corresponding to image 554 among images 551 to 557 decreases. This is because the reference marks 501 to 507 that are further away from reference mark 504 are located further apart from the image sensor surface 525. Here, F1 is denoted as the approximate curve that passes through the maximum light intensity of each of the images 551 to 557 when the substrate surface of substrate 6 is positioned at a first height Z1.

[0058] On the other hand, the light intensity of the images 561 to 563 of each of the circuit board marks 621 to 623 is approximately the same. This is because, since the substrate marks 621 to 623 are formed on the substrate surface of the substrate 6, the imaging positions of the substrate marks 621 to 623 are substantially the same in the direction of propagation of the illumination light.

[0059] Figure 3(b) shows the amount of light received at each pixel position in the Y direction on the image sensor surface 525 of the image sensor 524 when the substrate surface of the substrate 6 is at a second height Z2, i.e., a second position Z2 in the Z direction. Here, we assume that the pixel position in the X direction is fixed at X0 as shown in Figure 2(c).

[0060] As shown in Figure 3(b), when the substrate surface of the substrate 6 is positioned at the second height Z2, the light intensity of image 555 is the greatest among images 551 to 557. In other words, the imaging position of reference mark 505 among reference marks 501 to 507 is closest to the image sensor surface 525. This is because the height of the substrate surface of substrate 6 changed, which altered the imaging positions of each of the reference marks 501 to 507.

[0061] As shown in Figure 3(b), the light intensity of the image corresponding to a pixel position that is farther from the pixel position corresponding to image 555 among images 551 to 557 decreases. This is because the reference marks 501 to 507 that are further away from reference mark 505 are located further apart from the image sensor surface 525. Here, F2 is denoted as the approximate curve that passes through the maximum light intensity of each of the images 551 to 557 when the substrate surface of substrate 6 is positioned at a second height Z2.

[0062] On the other hand, the light intensity of the images 561 to 563 of each of the substrate marks 621 to 623 remains approximately the same. This is because, although the image positions of substrate marks 621 to 623 changed due to the change in the height of the substrate surface of substrate 6, they remain substantially the same in the direction of propagation of the illumination light.

[0063] In addition, even when the height of the substrate surface of substrate 6 changes from the first height Z1 to the second height Z2, the pixel positions corresponding to images 561 to 563 do not change.

[0064] Figure 3(c) shows the amount of light received at each pixel position in the Y direction on the image sensor surface 525 of the image sensor 524 when the substrate surface of the substrate 6 is shifted by a predetermined distance in the Y direction from the position shown in Figure 3(a).

[0065] As shown in Figure 3(c), the shift in the position of the substrate surface of substrate 6 in the Y direction causes the pixel positions where the light intensity of each of the images 561 to 563 of the substrate marks 621 to 623 is detected to shift in the Y direction overall. Here, Y1 and Y2 are the centroidal positions in the Y direction of the light intensity of images 561 to 563 in Figure 3(a) and Figure 3(c), respectively. At this time, the change in the alignment position ΔY of the substrate mark group 62 due to the shift in the Y direction of the substrate surface of substrate 6 in Figure 3(c) can be determined as Y2-Y1.

[0066] On the other hand, in Figure 3(c), the substrate surface of substrate 6 has not shifted in the Z direction from the position shown in Figure 3(a). Therefore, the light intensity distribution between images 551 to 557 in Figure 3(c) is approximately the same as the light intensity distribution between images 551 to 557 in Figure 3(a), meaning that the light intensity of image 554 is still the greatest among images 551 to 557.

[0067] In other words, this means that the imaging position of reference mark 504 among reference marks 501 to 507 is closest to the image sensor surface 525. Here, if we denote the approximation curve passing through the maximum light intensity of each of the images 551 to 557 in Figure 3(c) as F3, then this approximation curve F3 is identical to the approximation curve F1.

[0068] Figure 4 shows the approximate curves F1 and F2 obtained above.

[0069] As shown in Figure 4, the pixel position in the Y direction where the approximation curve F1 takes its maximum value is F Z1 The pixel position in the Y direction where the approximation curve F2 takes its maximum value is F Z2 This is how it is expressed. At this time, as the substrate surface of substrate 6 changes from a first height Z1 to a second height Z2, the pixel position in the Y direction where the approximation curve takes its maximum value is F Z1 From F Z2 This will result in a change.

[0070] Figure 5 shows an enlarged cross-sectional view of the substrate 6 near the illumination area in the alignment mechanism 50 according to this embodiment. Figure 5 also shows the plane 515' formed by projecting a plane containing the imaging positions of each of the reference marks 501 to 507 intersecting the image sensor surface 525 using the imaging optical system provided in the detection unit 52. In other words, plane 515' is also the conjugate plane of the reference mark substrate 515 formed by the illumination unit 51.

[0071] First, when ΔZ is expressed as the difference between the first height Z1 and the second height Z2 of the substrate surface of substrate 6, that is, the change in the position of the substrate surface of substrate 6 in the Z direction, ΔZ is expressed as Z2 - Z1.

[0072] Furthermore, as described above, when the substrate surface of the substrate 6 is positioned at the first height Z1, the light intensity of image 554 is the greatest among images 551 to 557, meaning that the height of the imaging position of the reference mark 504 corresponds to the first height Z1 of the substrate surface of the substrate 6. Similarly, when the substrate surface of substrate 6 is positioned at a second height Z2, the light intensity of image 555 is the greatest among images 551 to 557, meaning that the height of the imaging position of the reference mark 505 corresponds to the second height Z2 of the substrate surface of substrate 6.

[0073] Then, when the substrate surface of substrate 6 is positioned at a first height Z1, the approximation curve F1 is the pixel position F in the Y direction. Z1 It takes the maximum value in that case. Furthermore, when the substrate surface of substrate 6 is positioned at a second height Z2, the approximation curve F2 corresponds to the pixel position F in the Y direction. Z2 It takes the maximum value in that case.

[0074] Furthermore, θ is defined as the inclination angle with respect to the image sensor surface 525 of the plane containing the imaging positions of each of the reference marks 501 to 507 that intersect the image sensor surface 525, and β is defined as the optical magnification of the imaging optical system provided in the detection unit 52. At this time, the inclination angle θ' of the plane 515' of the substrate 6 with respect to the substrate surface is expressed as θ × β.

[0075] From the above, the amount of change ΔZ in the Z direction of the position of the substrate surface of the substrate 6 can be calculated as shown in equation (1) below, where P is the size of the pixel of the image sensor 524 in the Y direction.

number

[0076] As described above, in the alignment mechanism 50 according to this embodiment, the calculation unit 526 can calculate the position of the substrate mark in a plane (first plane) parallel to the substrate surface of the substrate 6 from the image of the substrate mark formed on the image sensor surface 525 of the image sensor 524.

[0077] Furthermore, in the alignment mechanism 50 according to this embodiment, the calculation unit 526 can calculate the position of the substrate mark in a direction perpendicular to the substrate surface of the substrate 6 (first direction) from the images of a plurality of reference marks formed on the image sensor surface 525 of the image sensor 524. In other words, the calculation unit 526 can calculate the position of the substrate mark in a direction perpendicular to the substrate surface of the substrate 6 (first direction) from the difference in light intensity between the images of multiple reference marks formed on the image sensor surface 525 of the image sensor 524.

[0078] Furthermore, the change in the light intensity of the images of each mark formed on the image sensor surface 525 due to the change in the position of the substrate surface of the substrate 6 in the Z direction will vary according to the line width and various optical specifications of the corresponding mark. For example, if the line width of the mark is approximately equal to or less than the resolving power R (=k × λ / NA) in Rayleigh's formula, then changes in the light intensity of the image of the mark formed on the image sensor surface 525 are sensitive to changes in the position of the substrate surface of the substrate 6 in the Z direction. On the other hand, if the line width of the mark is sufficiently large, approximately 3 to 5 times the resolution R in Rayleigh's formula, then the change in the amount of light of the image of the mark formed on the image sensor surface 525 will be insensitive to changes in the position of the substrate surface of the substrate 6 in the Z direction.

[0079] As described above, it is preferable that the change in light intensity of the images 551 to 557 of the reference marks 501 to 507 be sensitive to changes in the Z-direction of the position of the substrate surface of the substrate 6. On the other hand, it is preferable that the change in light intensity of the images 561 to 563 of the substrate marks 621 to 623 is insensitive to changes in the position of the substrate surface of the substrate 6 in the Z direction.

[0080] Therefore, in the alignment mechanism 50 according to this embodiment, the line width of the reference marks 501 to 507 formed on the reference mark substrate 515 is made narrower (smaller) than the line width of the substrate marks 621 to 623. This improves the detection accuracy of changes in the pixel position where the approximation curve obtained from the light intensity of each of the images 551 to 557 takes its maximum value, as a result of changes in the Z-direction of the position of the substrate surface of the substrate 6.

[0081] On the other hand, even if the position of the substrate surface of substrate 6 is changed in the Z direction, the change in light intensity of the images 561 to 563 of substrate marks 621 to 623 is insensitive, meaning that the light intensity is sufficiently maintained. Therefore, by maintaining a low level of noise influence on the light intensity, the detection accuracy of the alignment position of the substrate mark group 62 can be maintained.

[0082] In practice, the inclination angle θ with respect to the plane image sensor surface 525, which includes the imaging positions of each of the reference marks 501 to 507, and the optical magnification β of the imaging optical system provided in the detection unit 52 may change depending on the position of the substrate surface of the substrate 6 in the Z direction. In addition, the tilt angle θ and the optical magnification β may also change depending on the physical properties of the substrate 6 and the characteristics of the optical system in the alignment mechanism 50.

[0083] For example, the tilt angle θ may change depending on the field curvature aberration in the optical system of the alignment mechanism 50. Because field curvature aberration changes the focus to a curved shape relative to the image height, if there is field curvature aberration in the optical system of the alignment mechanism 50, the tilt angle θ changes according to the position of the substrate surface of the substrate 6 in the Z direction.

[0084] Furthermore, the optical magnification β may also change depending on, for example, the spectral reflectance of the substrate surface of the substrate 6. The spectral reflectance of the substrate surface of the substrate 6 may change depending on the manufacturing process of the substrate 6, in which case the optical magnification β will change according to the chromatic aberration of the optical system in the alignment mechanism 50.

[0085] Furthermore, while Figures 3(a) and (b) show that the pixel positions corresponding to images 561 to 563, i.e., the alignment positions of the substrate mark group 62, do not change even if the height of the substrate surface of substrate 6 changes, in reality, they may change. Specifically, in the alignment mechanism 50 according to this embodiment, if there is an inclination of the optical axis P or coma aberration in the optical system, the alignment position of the substrate mark group 62 may change when the height of the substrate surface of the substrate 6 changes.

[0086] Therefore, in this embodiment, the position of the substrate stage 7 in the Z direction is measured in the exposure apparatus 10 using an interferometer (not shown). It is preferable to obtain, in advance, a correspondence between the measurement result of the position in question and the measurement result of the alignment position of the substrate mark group 62 by the alignment mechanism 50 and the focus position of the substrate mark group 62 via the reference mark group 53. Furthermore, it is preferable to obtain these measurement results in correspondence with the type of substrate 6, that is, the manufacturing process of the substrate 6.

[0087] Specifically, a correlation is obtained between the position of the substrate stage 7 in the Z direction, measured by an interferometer (not shown), and the focus position of the substrate mark group 62, measured by the alignment mechanism 50. Furthermore, a correlation is obtained between the position of the substrate stage 7 in the Z direction, measured by an interferometer (not shown), and the alignment position of the substrate mark group 62, measured by the alignment mechanism 50.

[0088] As described above, the alignment mechanism 50 according to this embodiment can simultaneously measure the alignment position and focus position of the substrate mark group 62, and therefore can obtain the correlation between the alignment position and focus position of the substrate mark group 62. In the alignment mechanism 50 according to this embodiment, the measurement result of the alignment position of the substrate mark group 62 is corrected using the correlation between the acquired alignment position and focus position of the substrate mark group 62.

[0089] Figure 6 shows an example of the correlation between the alignment position and focus position of the substrate mark group 62 measured in the alignment mechanism 50 according to this embodiment.

[0090] First, the reference position for the focus position of the circuit board mark group 62, for example, the measured value of the best focus position by the alignment mechanism 50, is F Z1 The measured alignment position of the circuit board mark group 62 at that time is defined as A1. Furthermore, by moving the circuit board stage 7 only in the Z direction and not in the Y direction, the measured value of the focus position of the circuit board mark group 62 is F Z2 Let A2 be the measured value of the alignment position of the circuit board mark group 62 when it changes.

[0091] By moving the substrate stage 7 only in the Z direction and not in the Y direction, measurement values ​​of the alignment position corresponding to various focus positions of the substrate mark group 62 are obtained. Then, by performing, for example, linear interpolation on the obtained plurality of measurement values, it is possible to obtain the correlation between the alignment position and the focus position of the substrate mark group 62 as shown in FIG. 6.

[0092] Next, consider the case where the substrate stage 7 is moved in the Y direction. Specifically, for example, assuming that the measured value of the alignment position of the substrate mark group 62 by the alignment mechanism 50 is A, and the measured value of the focus position of the substrate mark group 62 by the alignment mechanism 50 is F Z2 Suppose it was. At this time, the measured value of the alignment position of the substrate mark group 62 after correction, that is, when the alignment mechanism 50 is at the best focus, can be obtained as A+(A1 - A2).

[0093] In the alignment mechanism 50 according to the present embodiment, the above-obtained correlation between the position of the substrate mark in the plane parallel to the substrate surface of the substrate 6 and the position of the substrate mark in the direction perpendicular to the substrate surface is stored in a storage unit (not shown). Then, the calculation unit 526 can correct the position of the substrate mark in the plane parallel to the substrate surface of the substrate 6 as described above by referring to the correlation stored in the storage unit. The storage unit may store the correlation for each type of the substrate 6.

[0094] In the measured value of the alignment position of the substrate mark group 62 corrected in this way, the characteristics of the alignment mechanism 50 and the substrate 6 are taken into account. That is, in the alignment mechanism 50 according to the present embodiment, the alignment accuracy of the substrate 6 can be improved. In addition, by using the above correction, it is not necessary to set the alignment mechanism 50 in the best focus state when measuring the alignment position of the substrate mark group 62, so the throughput, that is, the productivity, can be improved.

[0095] Furthermore, in the alignment mechanism 50 according to this embodiment, it is preferable to pre-adjust the position of the reference mark substrate 515 in a direction parallel to the optical axis P. Specifically, first, the change in contrast of the images of the substrate mark group 62 in accordance with the change in position of the substrate surface of substrate 6 in the Z direction is acquired.

[0096] Then, with the substrate surface of the substrate 6 positioned so that the contrast of the images of the substrate mark group 62 is maximized, the position of the reference mark substrate 515 in the optical axis direction is adjusted so that the light intensity of the image 554 of the reference mark 504, which is located in the center of the reference mark group 53, is maximized. This allows the detection range of focus by the reference mark group 53 to be evenly distributed in the positive and negative directions, based on the height of the substrate surface of the substrate 6, which is suitable for measuring the alignment position of the substrate mark group 62.

[0097] As described above, in the alignment mechanism 50 according to this embodiment, the focus position and alignment position of the substrate mark group 62 can be measured with a common optical system, thus enabling miniaturization and cost reduction. Furthermore, by correcting the measured alignment position of the circuit board mark group 62 based on the measured focus position of the acquired circuit board mark group 62, the alignment accuracy of the circuit board 6 can be improved.

[0098] In the alignment mechanism 50 according to this embodiment, the reference mark substrate 515 is tilted by rotating around the X-axis as described above, and each of the reference marks 501 to 507 has a rectangular shape that extends in the X-axis direction (second direction). In other words, the extension direction of each reference mark and the rotation axis of the reference mark substrate 515 are parallel to each other. In other words, the reference mark substrate 515 is inclined with respect to a plane perpendicular to the direction of propagation of the illumination light, such that the X-axis direction is perpendicular to the optical axis P of the illumination optical system, i.e., perpendicular to the direction of propagation of the illumination light.

[0099] This makes it possible to make the light intensity approximately uniform within the image of each reference mark on the image sensor surface 525 of the image sensor 524, while making the light intensity different between the images of each reference mark. Furthermore, as long as the above parallel relationship is satisfied, the extension direction of each reference mark on the reference mark substrate 515 and the rotation axis of the reference mark substrate 515 are not limited to the X axis.

[0100] Furthermore, in the alignment mechanism 50 according to this embodiment, the reference mark substrate 515 is tilted and positioned such that the plane containing the imaging positions of each of the reference marks 501 to 507 intersects with the image sensor surface 525 of the image sensor 524. In this case, the tilt angle of the reference mark substrate 515 is preferably determined by taking into consideration the field curvature aberration in at least one of the illumination optical system and the imaging optical system of the alignment mechanism 50.

[0101] Specifically, for example, since image field curvature aberration is more pronounced on the meridional surface than on the sagittal surface, it is preferable to determine the inclination angle of the reference mark substrate 515 taking this characteristic into consideration. This reduces the complexity of the optical design for correcting image field curvature aberration in the optical system of the alignment mechanism 50 according to this embodiment, thereby lowering the design difficulty of the optical system.

[0102] As the design difficulty of the optical system decreases, for example, by reducing the number of lenses that make up the optical system of the alignment mechanism 50 according to this embodiment, cost reduction and miniaturization can be achieved. Furthermore, for example, in the optical system of the alignment mechanism 50 according to this embodiment, aberrations other than field curvature can be corrected with greater emphasis.

[0103] Furthermore, in the alignment mechanism 50 according to this embodiment, multiple transparent portions 501 to 507 are provided as multiple reference marks on the reference mark substrate 515, but instead, multiple openings may be provided as multiple reference marks.

[0104] [Second Embodiment] Figure 7(a) shows an enlarged front view of the reference mark substrate 515 provided in the alignment mechanism according to the second embodiment. Figure 7(b) also shows a front view of the illuminated area on the substrate surface of the substrate 6 illuminated by the alignment mechanism according to the second embodiment. Figure 7(c) also shows an enlarged front view of the image sensor surface 525 of the image sensor 524 provided in the alignment mechanism according to the second embodiment. Since the alignment mechanism according to this embodiment is composed of the same components as the alignment mechanism 50 according to the first embodiment, the same reference numerals are used for the same components and their descriptions are omitted.

[0105] As shown in the alignment mechanism 50 according to the first embodiment, the alignment position of the substrate mark group 62 is measured by detecting the amount of light of the image of the substrate mark group 62 formed on the image sensor surface 525 of the image sensor 524. Here, the image of the substrate mark group 62 formed on the image sensor surface 525 is affected not only by the optical performance of the optical system in the alignment mechanism 50, but also by the material and thickness of the resist 61 and substrate mark group 62 applied to the substrate surface of the substrate 6. For example, if there is coma aberration in the optical system of the alignment mechanism 50, or if asymmetry occurs in the image of the substrate mark group 62 depending on the thickness of the substrate mark group 62, the measurement accuracy of the alignment position of the substrate mark group 62 may decrease.

[0106] On the other hand, as shown in the alignment mechanism 50 according to the first embodiment, the focus position of the substrate mark group 62 is measured by detecting the amount of light of the image of the reference mark group 53 that is formed on the image sensor surface 525 of the image sensor 524 by reflection from the substrate surface of the substrate 6. Therefore, with respect to the image of the reference mark group 53 formed on the image sensor surface 525, the amount of light in the entire image and the reflectance of the entire image change to the extent that the thin-film interference conditions associated with the material and thickness of the resist 61 applied to the substrate surface of the substrate 6 change. In other words, the change in the image of the reference mark group 53 according to the optical performance of the optical system is smaller than the change in the image of the substrate mark group 62.

[0107] Generally, the optical performance of an optical system is better for objects that are close to the optical axis of the optical system. Therefore, in the alignment mechanism according to this embodiment, each component is provided such that the center of the substrate mark group 62, which exhibits relatively large image changes depending on the optical performance of the optical system, is positioned on the optical axis.

[0108] Specifically, as shown in Figure 7(a), the reference mark substrate 515 is positioned such that the optical axis P of the optical system of the alignment mechanism according to this embodiment passes through the center of the transparent portion 508. Furthermore, as shown in Figure 7(b), the substrate stage 7 is moved so that the optical axis P of the optical system of the alignment mechanism according to this embodiment passes through the center of the substrate mark group 62, that is, the center of the first illumination area 611.

[0109] As a result, as shown in Figure 7(c), the optical axis P of the optical system of the alignment mechanism according to this embodiment passes through the center of the image of the substrate mark group 62 on the image sensor surface 525 of the image sensor 524. In other words, the image of the substrate mark group 62 is closer to the optical axis P of the optical system of the alignment mechanism according to this embodiment than the image of the reference mark group 53.

[0110] As shown in Figure 7(c), the image sensor 524 is positioned such that the entire images of the substrate mark group 62 and the reference mark group 53 are formed on the image sensor surface 525. In other words, although the center O of the image sensor surface 525 of the image sensor 524 is eccentric from the optical axis P, the optical performance of the optical system does not have a significant impact on the imaging performance of the image sensor 524, such as the detection of the amount of light in the formed image, so no problems arise from such an eccentric arrangement.

[0111] As described above, in the alignment mechanism according to this embodiment, the focus position and alignment position of the substrate mark group 62 can be measured with a common optical system, thus enabling miniaturization and cost reduction.

[0112] Furthermore, in the alignment mechanism according to this embodiment, the measured value of the alignment position of the substrate mark group 62 is corrected based on the measured value of the focus position of the substrate mark group 62 that has been acquired. In addition, by offsetting the center O of the image sensor surface 525 of the image sensor 524 from the optical axis P of the optical system of the alignment mechanism according to this embodiment, the image of the substrate mark group 62 is brought closer to the optical axis P than the image of the reference mark group 53. This makes it possible to further improve the detection accuracy of the alignment position of the substrate mark group 62, that is, the alignment accuracy of the substrate 6.

[0113] [Third Embodiment] Figure 8 shows a schematic cross-sectional view of the alignment mechanism 150 according to the third embodiment. Since the alignment mechanism 150 according to this embodiment has the same configuration as the alignment mechanism 50 according to the first embodiment, except that an ND filter 575 is newly provided, the same reference numerals are used for the same components and their descriptions are omitted.

[0114] For example, in the alignment mechanism 50 according to the first embodiment, in the arrangement corresponding to Figure 3(a), the light intensity of the reference mark image 554 formed on the image sensor surface 525 of the image sensor 524 and the light intensity of the substrate mark images 561 to 563 are substantially the same. However, if, for example, the reflectivity of the highly reflective portions 621 to 626 and the highly reflective portion 627 differs from that of the substrate 6 actually used, the light intensity of the image of the reference mark formed on the image sensor surface 525 will differ from that of the image of the substrate mark.

[0115] Furthermore, for example, the contrast of the image of the substrate mark group 62 formed on the image sensor surface 525 may be improved by irradiating the highly reflective portions 621 to 626 with illumination light of the first order or higher, from which the zero-order light has been removed from the illumination light from the light source 511. In such cases, the intensity of the reflected light from the highly reflective sections 621 to 626 and the reflected light from the highly reflective section 627 are different from each other, resulting in a difference in the amount of light in the image of the reference mark formed on the image sensor surface 525 and the amount of light in the image of the substrate mark.

[0116] As described above, if the light intensity of the images of the two marks differs from that of the other, the noise effect will be greater when detecting the image of the mark with the relatively lower light intensity formed on the image sensor surface 525, which may reduce the measurement accuracy in that detection. Therefore, in the alignment mechanism 150 according to this embodiment, the illumination light intensity of the substrate mark group 62 and the illumination light intensity of the reference mark group 53 are adjusted independently.

[0117] Specifically, as shown in Figure 8, a removable ND filter 575 (dimming means) is provided near the field aperture 514 in the optical path of the illumination light between the light source 511 and the field aperture 514. Furthermore, by adjusting the intensity of the illumination light emitted from the light source 511 and the insertion or removal of the ND filter 575, the illumination light intensity of the substrate mark group 62 and the illumination light intensity of the reference mark group 53 can be adjusted independently. In other words, the alignment mechanism 150 according to this embodiment is provided with an ND filter 575 that adjusts at least one of the light intensity of the illumination light in the first illumination area 611 and the light intensity of the illumination light in the second illumination area 627 on the substrate surface of the substrate 6.

[0118] As described above, in the alignment mechanism 150 according to this embodiment, the focus position and alignment position of the substrate mark group 62 can be measured with a common optical system, thus enabling miniaturization and cost reduction. Furthermore, by correcting the measured alignment position of the circuit board mark group 62 based on the measured focus position of the acquired circuit board mark group 62, the alignment accuracy of the circuit board 6 can be improved.

[0119] In addition, the alignment mechanism 150 according to this embodiment can appropriately detect the images of the substrate mark group 62 and the reference mark group 53 by independently adjusting the illumination light intensity of the substrate mark group 62 and the illumination light intensity of the reference mark group 53, respectively.

[0120] In this embodiment, the alignment mechanism 150 independently adjusts the illumination light intensity of the substrate mark group 62 and the illumination light intensity of the reference mark group 53 by inserting and removing the ND filter 575, but is not limited to this. Alternatively, the gain may be adjusted so that the magnitude of the gain differs between the region on the image sensor surface 525 of the image sensor 524 where the image of the substrate mark group 62 is formed and the region where the image of the reference mark group 53 is formed.

[0121] [Method of manufacturing articles] The method for manufacturing articles according to this embodiment is suitable for manufacturing articles such as semiconductor devices, liquid crystal display elements, flat panel displays, and micro-electromechanical systems (MEMS).

[0122] Specifically, the method for manufacturing an article according to this embodiment includes the steps of exposing a photosensitive material on a substrate coated with the photosensitive material using an exposure apparatus 10 equipped with the alignment mechanism according to this embodiment described above, and developing the photosensitive material exposed in the exposure step. Next, the developed photosensitive pattern is used as a mask to perform etching, ion implantation, and other processes on the substrate, thereby forming a circuit pattern on the substrate. Then, by repeatedly performing these processes such as exposure, development, and etching, a circuit pattern consisting of multiple layers is formed on the substrate.

[0123] Next, in the subsequent processes, the substrate with the circuit pattern is diced (processed), and then the formed chips are mounted, bonded, and inspected. Furthermore, the method for manufacturing the article according to this embodiment may include other well-known processing steps (such as oxidation, film formation, vapor deposition, doping, planarization, and photosensitive agent removal).

[0124] The method for manufacturing articles according to this embodiment is advantageous compared to conventional methods for manufacturing articles in at least one of the following aspects: performance, quality, productivity, and production cost.

[0125] Although preferred embodiments have been described above, the invention is not limited to these embodiments, and various modifications and changes are possible within the scope of its essence. [Explanation of Symbols]

[0126] 6 circuit boards 50. Alignment mechanism (measuring device) 501, 502, 503, 504, 505, 506, 507 Standard Mark 511 Light source 524 Image sensor (light-receiving element) 611 First illumination area (first area) 621, 622, 623, 624, 625, 626 Circuit board mark

Claims

1. An illumination optical system that guides light from a light source to an illumination region including a first region on the substrate surface of the substrate in which substrate marks are formed, A light-receiving element that receives the light from the illumination area, An imaging optical system that guides the light from the illumination area to the light-receiving element, Equipped with, A plurality of reference marks are provided on the optical path of the light between the light source and the substrate, at least two of which are positioned at different locations relative to each other in the direction of light propagation. The system includes a calculation unit that calculates the position of the substrate mark in a first plane parallel to the substrate surface from the image of the substrate mark formed on the light-receiving element, and calculates the position of the substrate mark in a first direction perpendicular to the substrate surface from the images of the plurality of reference marks formed on the light-receiving element. The calculation unit calculates the position of the substrate mark in the first plane and in each of the first directions at each of the plurality of positions on the substrate in the first direction, thereby obtaining a correlation between the position of the substrate mark in the first direction and the position of the substrate mark in the first plane. The measuring device is characterized in that the calculation unit corrects the position of the substrate mark in the first plane based on the acquired correlation.

2. The measuring device according to claim 1, characterized in that images of the plurality of reference marks are formed in a second region included in the illumination region.

3. The measuring device according to claim 1 or 2, characterized in that the calculation unit calculates the position of the substrate mark in the first direction from the difference in light intensity between the images of the plurality of reference marks formed on the light-receiving element.

4. The measuring device according to any one of claims 1 to 3, characterized in that it comprises a storage unit for storing the aforementioned correlation.

5. The measuring device according to claim 4, characterized in that the storage unit stores the correlation relationship for each type of substrate.

6. The measuring device according to any one of claims 1 to 5, characterized in that the plurality of reference marks are formed on the substrate surface, and the substrate surface is inclined with respect to a second plane perpendicular to the direction of light propagation.

7. The measuring device according to claim 6, characterized in that the reference mark substrate is positioned at a location that is optically conjugate to the illumination area.

8. The aforementioned multiple reference marks are multiple transparent portions provided on the reference mark substrate, The measuring device according to claim 6 or 7, characterized in that the substrate mark is a reflective portion provided on the substrate surface of the substrate.

9. Each of the aforementioned reference marks has a rectangular shape extending in a second direction within the substrate surface of the reference mark substrate, The measuring device according to any one of claims 6 to 8, characterized in that the reference mark substrate is inclined with respect to the second plane such that the second direction is perpendicular to the direction of light propagation.

10. The measuring device according to any one of claims 6 to 9, characterized in that the angle of inclination of the reference mark substrate is determined based on the field curvature aberration in at least one of the illumination optical system and the imaging optical system.

11. The measuring device according to any one of claims 1 to 10, characterized in that the optical axis of the illumination optical system passes through the center of the first region.

12. Each of the substrate mark and the plurality of reference marks has a rectangular shape extending in a predetermined direction. The measuring device according to any one of claims 1 to 11, characterized in that the width of each of the plurality of reference marks is narrower than the width of the substrate mark.

13. The images of the aforementioned plurality of reference marks are formed in a second region included in the illumination region. The measuring device according to any one of claims 1 to 12, characterized in that it is provided with dimming means for adjusting at least one of the light intensity in the first region and the light intensity in the second region.

14. An exposure apparatus for exposing a substrate so as to transfer a pattern provided on a master plate onto the substrate, An exposure apparatus characterized by comprising a measuring device according to any one of claims 1 to 13 for measuring the position of the substrate.

15. A step of exposing a substrate using the exposure apparatus described in claim 14, A step of developing the exposed substrate, A method for manufacturing an article, characterized by including the following:

Images