Slot die type gas distribution device for solar power generation device manufacturing

Abstract

The present application discloses a slot die type gas distribution device for photovoltaic manufacturing, which includes a first gas distribution device (105) at the inlet (104) of a process chamber and a second gas distribution device (13) at the outlet (11) of the process chamber, the first gas distribution device (105) and the inlet (104) of the process chamber are connected via a first communication device (9) having a flat rectangular prism shape, and the second gas distribution device (13) and the outlet (11) of the process chamber are connected via a third communication device (12) having a flat rectangular prism shape, which effectively improves the uniformity of gas distribution in the process chamber.

Description

Technical Field

[0001] This application relates to the technical field of thin film photovoltaic power generation manufacturing, and more specifically, to a slot die type gas distribution device for photovoltaic power generation manufacturing.

Background Art

[0002] In the manufacturing process of photovoltaic power generation, there are several important process steps including gas distribution and high temperature heating to passivate or form several layers. Figure 1 shows a general schematic diagram of such a process. These semi-finished solar devices processed here (substrates, stacks of several photovoltaic layers: including upper and lower stacks) may be silicon-based or thin-film photovoltaic technology. Note that the gas referred to here may be a reaction gas or a mixture of gases (reaction gas and carrier gas). In the case of Si-PV, the n-type Si surface is sulfurized / passivated using H2S (reaction gas) to increase carrier lifetime at approximately 600°C. Alternatively, the SiOx:Al2O3 contacts of p-type or n-type Si-PV are hydrogenated / passivated using H2 (reaction gas) and N2 (carrier gas) to improve the lifetime of charge carriers at approximately 400°C. Alternatively, in the LPCVD (low-pressure chemical vapor deposition) process, the n- or p-Si layer of the TOPCon cell is doped using B2H6 and PH3 (both reaction gases). In the case of thin-film PV, defects can be reduced and power conversion efficiency improved by passivating CdTe grain boundaries using H2Se, Cl2, and HCl gases at 400-450°C. Alternatively, the CIGS absorption layer may be sulfurized / seleniumized / passivated using H2S / H2Se at 300-400°C during PDT (post-deposition testing). Or, the CIGS precursor layer may be sulfurized / seleniumized using H2S or H2Se at 400-600°C during RTP (rapid heat treatment) to form the CIGS absorbent. Typically, these processes, which use gas under high-temperature heating conditions, are carried out in process chambers of very limited size to save energy and other costs by minimizing heat and the amount of gas required. In such laterally flattened process boxes, it is not easy to achieve a uniform gas distribution. In large process boxes for mass production, introducing gas into the chamber easily creates localized concentration gradients. Although the gas is preheated to 100-150°C before the inlet, there is still a temperature difference between the gas and the continuously heated process chamber, for example, 400-600°C. This also creates localized temperature gradients within the process box.Since the reaction kinetics of a process (such as sulfidation, selenization, chlorination, hydrogenation, or doping with boron or phosphorus) are strongly influenced by the concentration and temperature of the reactants (in this case, the reaction gases), precise control of a uniform gas distribution within the process box is crucial to ensure process reproducibility and uniformity, as well as good PV device performance for mass production.

[0003] However, in reality, the chemical reactions in the top layer (see Figure 1) in the above process can be very complex and rapid. Therefore, an improper process box design can lead to a non-uniform distribution of gas (reaction gas, or a mixture of reaction gas and carrier gas) and gas temperature, and further, can cause non-uniformity in the surface morphology / roughness, static or photoelectric properties of the final photovoltaic device. An example of a selenization / sulfidation process box used in some photovoltaic manufacturing is shown in Figure 2, which illustrates the direct correlation between an improper standard process box design and non-uniform gas distribution within the process box. In addition to the selenization / sulfidation process, an improper process box design can also lead to non-uniform gas distribution in chlorination, hydrogenation, and boron or phosphorus doping in PV manufacturing.

[0004] Figure 2 shows a standard design of a conventional selenization / sulfidation process box 16. This type of process box 16 typically consists of a main frame (made of high-temperature resistant material) having one fixed bottom plate and one unfixed cover plate (gravity coating mechanism), and the gas passes through the substrate 18 (the uppermost photovoltaic layer stack) and reacts with its surface. Both the cover plate 19 and the bottom plate 17 are made of infrared-transmitting or infrared-emitting material. Heating of such a selenization / sulfidation process box 16 is achieved by heat dissipation on both sides of the cover plate 19 and the bottom plate 17. Since the bottom plate 17 is fixed but the cover plate 19 is not, if the process chamber 20 is filled with gas, the gas may be present through the guide side of the uppermost short edge (the gap between the process box frame and the cover plate 19), which is represented as the uppermost gas outlet. In this embodiment, gas inlets / outlets are designed on either of the two long edge guide sides of the frame. In practice, there are two methods: 1) Gas is filled into the process chamber 20 through the gas inlet on the left and discharged through the gas outlet on the right. 2) Gas is filled into the process chamber 20 through the gas inlets on the left and right, and then, due to excessive filling of the chamber 20, the leading edge of the short side at the top becomes the gas outlet. In the case of such a narrow gap in the process chamber (height-width / length-ratio exceeding a certain size), it is not easy to uniformly distribute the gas within it because the pressure drop along the process chamber is abrupt.

[0005] Figure 3 shows a standard design for the left-side inlet of the gas distribution in a conventional selenization / sulfidation process box. The arrows in the figure should indicate the direction of gas flow in the passage before entering the process chamber 20. The gas is first introduced into the intake duct inlet 1 and then passes through the intake duct 2. This airflow is further distributed along the gas manifold 3, flows into several pipes 4, and finally exits the left-side inlet through the orifice 5 and enters the process chamber 20. A typical intake duct inlet 1 is located in the same horizontal plane as the intake duct 2 and the gas manifold 3. Note that the rows of gas orifices 5 on the two long-edge guide sides are not symmetrically arranged. After exiting the left-side inlet, the gas enters the process chamber 20 and reacts with the photovoltaic layer stack on the substrate 18.

[0006] Furthermore, the size of the gas outlet section is designed to be a mirror image of the gas inlet section, with the sizes being inverted.

[0007] Figure 4a) shows the gas streamlines within process chamber 20 based on numerical simulation, and Figure 4b) shows, for comparison, an optical scan image of the top layer of the corresponding photovoltaic layer stack after selenization / sulfidation using the same process conditions. In the simulation settings, a constant gas flow rate is applied to the process box, 60% at the left inlet and 40% at the right inlet. Thus, the top of the process box is set as the gas outlet, and the remaining boundary is set as a normal wall. All of these should reflect to some extent the actual selenization / sulfidation production conditions. The photovoltaic panel is highlighted within the dotted box in Figure 4a). Regarding the gas streamline distribution shown here, many "finger" shaped gas superflows (bright areas) can be seen from the leading edges of the two long sides. Interestingly, many of these are strongly related to the position of the gas orifice 5. Some of the gas superflows form large vortices. Finally, the gas flow flows along the sine line (in the center) towards the gas outlet at the top short leading edge. Comparing Figures 4a) and 4b), based on the scanning images, there is a strong correlation between the simulated gas flow and the effect of selenization / sulfidation on the surface of the photovoltaic layer. Thus, our simulation can be validated in some way. The dark areas of the photovoltaic layer (Figure 4b)) represent high surface roughness, while the bright areas (finger-like gas jets) are presumed to have less roughness because smoother surfaces reflect more light. The process chamber 20 is typically preheated by an IR emitter before gas injection. The typical "cold" temperature of the gas before entering the process chamber is 100-150°C. Therefore, due to less thermal energy in the growth process by selenization, locally small crystal grains exist on the surface of the layer, as the more colder the gas, the more uneven injection can affect the top layer of the photovoltaic layer in question. This means that under optical scanning, the surface of the top layer of the photovoltaic layer stack in question can appear smoother and brighter within the gas injection area in a standard process box (see Figure 4). Furthermore, darker areas indicate higher temperatures, which can lead to the generation of more defects in parts of the device, potentially resulting in reduced power conversion efficiency.

[0008] Non-uniform gas distribution, such as fingers and vortices, not only affects the performance of photovoltaic devices but also the optical appearance of the final photovoltaic product. These are unsuitable for BIPV facade applications. Since these panels must be discarded, production volume decreases and the cost / price of the product increases.

[0009] Therefore, in order to obtain better electrical and aesthetic characteristics of the photovoltaic modules, it is necessary to improve the gas distribution within the relevant process box.

[0010] In conventional technology, methods have been designed to use transport tubes 4 with large diameter or expanding orifices to solve the problem of uneven gas distribution in process boxes. For comparison, Figures 5a), 5b), and 5C show a standard design and two modified designs of the intake section of a process box, respectively. As shown in Figures 5b) and 5C, the tube 4 consists of two parts: the left half adopts the same piping design as the standard design (Figures 3b) and 5b), while the right half adopts a "bowl" shaped hole extension, thereby expanding the gas injection from the orifice 5 to the process chamber 20. The tubes in Figures 5b) and 5C have different diameters.

[0011] Furthermore, the exhaust section of the process box is designed to be in a mirrored relationship with the intake section of the process box, with the mirroring being reversed.

[0012] Figure 6 shows the gas streamlines of the two improved designs in Figure 5b) and Figure 5C, where the gas is ejected from the inlet on the left and exits the region from the outlet on the right. For the simulation settings, the top and remaining boundaries of the process box are set to be normal walls, i.e., without gas outlets. The remaining boundary conditions remain the same as in Figure 4. On the right side, it can be seen that the gas streamlines are more parallel towards the gas outlet on the right. The modified design appears to have improved the gas distribution within the process box to some extent. However, the non-uniform gas flow, due to the presence of "finger" shaped gas spurious and vortex flows, causes a non-uniform distribution of the gas and temperature fields. This therefore affects the device performance and optical appearance of the final photovoltaic product.

[0013] In short, while improved process boxes employing expanding gas orifices can slightly improve gas distribution, they cannot completely solve the problem. Further improvements to the process box design are still needed to achieve a more uniform gas distribution. [Overview of the Initiative] [Problems that the invention aims to solve]

[0014] In view of the problems present in the prior art described above, this application provides a slot-die type gas distribution device for solar power generation manufacturing that effectively improves the uniformity of gas distribution within the process chamber. [Means for solving the problem]

[0015] The slot-die type gas distribution device for photovoltaic power generation provided herein includes a first gas distribution device located at the inlet of a process chamber, the first gas distribution device having a first inlet and a first outlet, the first inlet being connected to an intake duct and the first outlet being connected to the inlet of the process chamber. The first outlet and the inlet of the process chamber are connected by a first communication device, the first communication device being a flattened rectangular prism-shaped hollow box, the two opposing sides of the hollow box being lidless and used as an inlet and an outlet respectively, the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber being the same in shape and size, the hollow box being longer than its width and wider than its height, the two lidless sides of the hollow box being parallel to the height direction of the hollow box, that is, the inlet of the hollow box being elongated.

[0016] The gas is transported to the process chamber after passing through the inlet of the intake duct, the intake duct, the outlet of the intake duct, the inlet of the first gas distributor (i.e., the first inlet), the first gas distributor, the outlet of the first gas distributor (i.e., the first outlet), the inlet of the first communication device (i.e., the inlet of the hollow box), the first communication device, the outlet of the first communication device (i.e., the outlet of the hollow box), and the inlet of the process chamber in that order.

[0017] In the embodiment of the present application, "the hollow box is longer than its width, and its width is greater than its height, and the two lidless sides of the hollow box are parallel to the height direction of the hollow box" means that the length of the inlet / outlet of the hollow box is the same as the length of the hollow box, and the width of the inlet / outlet of the hollow box is the same as the height of the hollow box. In other words, the inlet of the hollow box is elongated. Furthermore, "the shape and size of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same," meaning that the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are all elongated, and their shape and size are the same as the lidless sides of the hollow box.

[0018] In the embodiment of the present application, the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are all elongated and have the same size and shape. This improves the uniformity of the gas distribution within the process chamber.

[0019] In some preferred embodiments, the ratio of length, width, and height of the flattened rectangular hollow box is between 5000:20:1 and 20000:100:1.

[0020] In some preferred embodiments, the first gas distribution device includes a first gas distribution duct. The first inlet is provided at the top of the first gas distribution duct such that the direction of gas flow passing through the first inlet is perpendicular to the bottom surface of the first gas distribution duct, and the top of the first gas distribution duct is the highest point of the first gas distribution duct from the ground. The first exit is located at a lower position than the first entrance.

[0021] In the embodiment of the present invention, the first inlet is located at the top of the first gas distribution duct such that the direction of gas flow passing through the first inlet is perpendicular to the bottom surface of the first gas distribution duct. As a result, the gas flows into the first gas distribution duct from the top, then flows to the bottom surface of the first gas distribution duct, rises along the side surface connected to the bottom surface, and finally flows out from the first outlet. "The first outlet is located at a lower position than the first inlet" means that "the height of the first outlet from the ground is lower than the height of the first outlet from the ground."

[0022] In some preferred embodiments, the first inlet is located at the top center of the first gas distribution duct.

[0023] In the embodiment of the present invention, since the first inlet is provided in the center of the uppermost surface of the first gas distribution duct, gas flows from the first inlet into the middle of the first gas distribution duct, gas redistribution occurs, and the gas is distributed throughout the interior of the first gas distribution duct, improving the uniformity of the gas within the first gas distribution duct.

[0024] In some preferred embodiments, the first outlet is elongated and is arranged along the length direction of the first gas distribution duct, and has the same length as the length of the first gas distribution duct, that is, the length of the first gas distribution duct is the same as the length of the first communication device.

[0025] In the embodiments of the present application, the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are all elongated, and the lengths of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same as the length of the first gas distribution duct (that is, the length of the first gas distribution duct is the same as the length of the first communication device (hollow box)). After the gas is uniformly distributed in the first gas distribution duct, it flows out from the first outlet having the same length as the length of the first gas distribution duct. In the whole process of the gas flowing from the first gas distribution device to the first communication device (that is, the hollow box) and then to the inlet of the process chamber, the area and shape of the flow cross-section of the gas flow always remain the same, and the uniformity of the gas distribution after reaching the process chamber is further improved.

[0026] In some preferred embodiments, the height of the inlet and the outlet of the hollow box from the ground is the same, that is, the height of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber from the ground is the same. The height direction of the hollow box is perpendicular to the ground.

[0027] In the embodiment of the present application, the statement that "the height direction of the first communication device (i.e., the hollow box) is perpendicular to the ground" means that, that is, "the plane formed by the length and width of the first communication device (i.e., the hollow box) is parallel to the ground", that is, it means that the first communication device (i.e., the hollow box) is parallel to the ground. Since the heights from the ground of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same, in the process of transporting gas from the intake duct into the process chamber, the height of the flow cross-section of the gas flow always remains the same, and the stability of the gas distribution in the flow process is improved.

[0028] As described above, since the heights (i.e., the heights from the ground), sizes, and shapes of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same, thereby, before entering the process chamber, after gas uniform distribution is realized through the first gas distribution duct, in the process of passing through the first outlet, the first communication device, and the inlet of the process chamber, the area, shape, and height of the flow cross-section of the air flow always remain the same, and the uniformity of the gas distribution of the gas entering the process chamber is effectively guaranteed.

[0029] In some preferred embodiments, the first gas distribution device includes m first gas distribution ducts, where m is 2 or more, the m first gas distribution ducts are connected in sequence, and adjacent two first gas distribution ducts are connected through a second communication device so that a plurality of gas distribution processes are realized. The second communication device and the first communication device have the same structure. The first inlet is provided on the first gas distribution duct at the starting end, and the first outlet is provided on the first gas distribution duct at the terminal end.

[0030] Furthermore, the fact that the second communication device and the first communication device are structurally identical can be understood as the second communication device being a replica of the first communication device. Also, although it was explained above that "the height direction of the first communication device (i.e., the hollow box) is perpendicular to the ground," since the second communication device and the first communication device are identical, the height direction of the second communication device is perpendicular to the ground, meaning that the height from the ground is the same at the inlet and outlet of the hollow box of the second communication device. When two adjacent first gas distribution ducts are connected via the second communication device, a gas flow orifice is formed in the first gas distribution duct at the connection point between the first gas distribution duct and the second communication device, with the same height (height from the ground), size, and shape as the inlet / outlet of the second communication device.

[0031] In the embodiment of the present invention, by sequentially connecting a plurality of first gas distribution ducts, multiple uniform gas distribution processes are realized, improving the uniformity of the gas entering the process chamber. The first inlet is provided on the uppermost surface of the first gas distribution duct at the starting end, the inlet of the first gas distribution duct at the starting end is the first inlet, the outlet of the first gas distribution duct at the starting end is the gas flow orifice described above, and each of the other first gas distribution ducts, except for the first gas distribution duct at the starting end, is provided with two of the gas flow orifices described above (one used as an intake port and the other as an exhaust port), and the exhaust port of the last first gas distribution duct is the first outlet of the first gas distribution device. Furthermore, the height (height from the ground), size, and shape of all gas flow orifices are the same as those of the first outlet, the inlet of the second communication device (i.e., the inlet of the hollow box), the outlet of the second communication device (i.e., the outlet of the hollow box), and the inlet of the process chamber. As a result, the gas undergoes multiple uniform distributions via the first gas distribution duct before entering the process chamber, and the area, shape, and height of the gas flow cross-section remain constant throughout the transport process as it passes through the second communication device, the first outlet, the first communication device, and the inlet of the process chamber.

[0032] In some preferred embodiments, the first gas distribution duct is semi-cylindrical or rectangular.

[0033] In some preferred embodiments, when the first gas distribution duct is semi-cylindrical, The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground. The first inlet is provided on the curved surface of the semi-cylindrical duct, and the height of the first inlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct. This design ensures that the direction of gas flow when passing through the first inlet is perpendicular to the rectangular plane of the semi-cylindrical duct. The statement "the height of the first inlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct" means that the gas flows into the semi-cylindrical duct from the highest point above the ground, and simultaneously flows out from the first outlet, which is located at a relatively low position, after being uniformly distributed within the semi-cylindrical duct.

[0034] This design allows the gas to pass through the first inlet perpendicular to the rectangular plane of the semi-cylindrical duct, then descend to the rectangular plane of the lower semi-cylindrical duct, and then rise along the curved surface of the semi-cylindrical duct, thereby achieving gas distribution within the semi-cylindrical duct.

[0035] The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and since the rectangular plane of the semi-cylindrical duct is parallel to the ground, a stable and vibration-resistant first gas distribution duct is realized.

[0036] In some preferred embodiments, the first inlet is located in the center of the curved surface of the semi-cylindrical duct.

[0037] In the embodiment of the present invention, gas flows from the first inlet into the middle of the first gas distribution duct, and gas redistribution takes place. The gas flows and diffuses simultaneously in the direction of the semicircular cross-section of the semicylindrical duct and in the longitudinal direction of the duct, so that the gas is distributed throughout the entire interior of the semicylindrical duct, improving the uniformity of the gas within the semicylindrical duct.

[0038] In some preferred embodiments, the first outlet is provided on the curved surface of the semi-cylindrical duct, the height of the first outlet from the rectangular plane of the semi-cylindrical duct is less than the radius of the semi-cylindrical duct, and the distance between the two semicircular planes of the semi-cylindrical duct is the length of the semi-cylindrical duct, and the first outlet is provided along the longitudinal direction of the semi-cylindrical duct.

[0039] In the embodiment of the present application, the height of the first outlet from the ground is lower than that of the first outlet. As can be seen from the above description, "the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are all elongated, and their shape and size are the same as the side of the hollow box without a lid." In the embodiment of the present application, the length of the first outlet is the same as the length of the semi-cylindrical duct, that is, the semi-cylindrical duct and the first communication device (i.e., the hollow box) are the same length.

[0040] In some preferred embodiments, the multiple first gas distribution ducts are of the same size.

[0041] In some preferred embodiments, the sizes of the multiple first gas distribution ducts are different.

[0042] In some preferred embodiments, the process chamber further includes a second gas distribution device located at the outlet of the process chamber, the second gas distribution device having a second inlet and a second outlet, the process chamber outlet being connected to the second inlet and the second outlet being connected to an exhaust duct. The outlet of the process chamber and the second inlet are connected via a third communication device, and the third communication device and the first communication device have the same structure.

[0043] In the embodiment of the present invention, the slot-die type gas distribution device further includes a second gas distribution device located at the outlet of the process chamber, the concept of which the second gas distribution device is similar to that of the first gas distribution device.

[0044] Specifically, after processing and manufacturing the photovoltaic power generation device in the process chamber, the gas flows out from the outlet of the process chamber and through a third communication device to a second gas distribution device.

[0045] Furthermore, the fact that the third communication device and the first communication device are structurally identical can be understood as the third communication device being a replica of the first communication device. In the above description, it was explained that the two opposing sides of the hollow box of the third communication device, which are parallel in the height direction, are left without lids and serve as the inlet and outlet of the third communication device. That is, the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet are all elongated, and their shape and size are the same as the lidless sides of the hollow box. That is, the length of the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet is the same as the length of the hollow box, and the width of the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet is the same as the height of the hollow box.

[0046] The gas flowing out of the process chamber outlet flows sequentially through the inlet of the third communication device, the third communication device, the outlet of the third communication device, the second inlet, the second gas distributor, the second outlet, and the exhaust duct, and the area and shape of the airflow cross-section of the gas flowing out of the process chamber outlet are the same throughout the entire flow process.

[0047] Furthermore, as explained above, "the height of the first communication device (i.e., the hollow box) is perpendicular to the ground." The height of the third communication device is also perpendicular to the ground; that is, the height from the ground is the same at the inlet and outlet of the hollow box of the third communication device. As can be seen from the above explanation, the height (height from the ground), size, and shape of the process chamber outlet, the inlet of the third communication device, the outlet of the third communication device, and the second inlet are the same. In other words, the height of the airflow cross-section throughout the entire flow process of the gas flowing out of the process chamber outlet is the same.

[0048] In some preferred embodiments, the second gas distribution device includes a second gas distribution duct. The second outlet is located at the top of the second gas distribution duct such that the flow direction of the gas flowing out from the second outlet is perpendicular to the bottom surface of the second gas distribution duct, the second inlet is located at a lower position than the second outlet, and the top of the second gas distribution duct is the highest point of the second gas distribution duct from the ground. The second inlet is elongated, and is positioned along the length of the second gas distribution duct, with a length equal to the length of the second gas distribution duct; that is, the length of the second gas distribution duct and the length of the third communication device are the same.

[0049] In the embodiment of the present application, the second gas distribution device includes a second gas distribution duct, the second inlet being provided in the gas distribution duct and located lower than the second outlet, and the second outlet being located at the top of the gas distribution duct so that the process chamber gas can enter the second gas distribution duct from the lower-positioned second inlet and be uniformly distributed in the second gas distribution duct.

[0050] Furthermore, both this second gas distribution duct and the first gas distribution duct described above serve the same role of redistributing gas; the designations "first" and "second" are merely used to distinguish between the first gas distribution duct, which is located at the inlet of the process chamber, and the second gas distribution duct, which is located at the outlet of the process chamber. The second gas distribution duct and the first gas distribution duct described above may or may not have the same shape and size.

[0051] Furthermore, the position and structure of the first inlet are the same as those of the second outlet, and the position and structure of the first outlet are the same as those of the second inlet; therefore, the height (i.e., height from the ground), size, and shape of the process chamber outlet, the inlet / outlet of the third communication device (i.e., the inlet / outlet of the hollow box), the inlet of the hollow box, and the second inlet are the same.

[0052] The statement "The second inlet is positioned along the length of the second gas distribution duct and is the same length as the second gas distribution duct" means that the lengths of the process chamber outlet, the hollow box inlet, the hollow box outlet, and the second inlet are all the same as the length of the gas distribution duct. Furthermore, the length of the gas distribution duct of the second gas distribution device is the same as the length of the hollow box of the third communication device.

[0053] In some preferred embodiments, the height of the second inlet is greater than the height of the first outlet. As mentioned above, the heights (i.e., height from the ground) of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same. Furthermore, as mentioned above, the heights (i.e., height from the ground) of the outlet of the process chamber, the inlet / outlet of the third communication device (i.e., the inlet / outlet of the hollow box), the inlet of the hollow box, and the second inlet are the same. Therefore, "the height of the second inlet is greater than the height of the first outlet" means that the height of the inlet of the process chamber is higher than the height of the outlet of the process chamber.

[0054] In some preferred embodiments, the second gas distribution device includes a second gas distribution duct, the second gas distribution duct being semi-cylindrical or rectangular.

[0055] In some preferred embodiments, when the second gas distribution duct is semi-cylindrical, The rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground. The second inlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second inlet from the rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct. The second outlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct.

[0056] In other words, the second outlet is located at the highest point of the curved surface of the semi-cylindrical duct, and the position of the second outlet is higher than that of the second inlet.

[0057] In some preferred embodiments, the intake duct and the exhaust duct are curved pipes. In the embodiments of the present application, the intake duct and the exhaust duct are formed by connecting two ducts with different directions of flow. Furthermore, the directions of flow of the two ducts are set to be perpendicular to each other. Furthermore, in this application, the size design of the first and second gas distribution ducts described above can be adjusted according to the final size of the PV panel and the corresponding process box. [Brief explanation of the drawing]

[0058] [Figure 1] This is a schematic diagram illustrating the reaction of several photovoltaic stacks (top layer + bottom layer stack) with gas under heating conditions in a process chamber. [Figure 2]This figure shows a standard design of a conventional selenization / sulfidation process box in one embodiment, where Figure 2a) is a perspective view and Figure 2b) is a detailed side view. [Figure 3] This figure shows a standard design of the left gas inlet in one embodiment of a conventional selenization / sulfidation process apparatus, where Figure 3a) is a plan view and Figure 3b) is a side view. [Figure 4] Figure 4a) is a schematic diagram of the heterogeneous gas distribution in one embodiment of a standard selenization / sulfidation process box, where Figure 4b) shows simulated gas streamlines within the selenization / sulfidation process box, and Figure 4b) is an optical scan photograph of the top layer of the associated photovoltaic stack processed in a standard selenization or sulfidation process box under the same process conditions. [Figure 5] Figure 5a) shows different conventional designs of the intake section of the process chamber; Figure 5b) shows the standard design, Figure 5c shows the modified design 1, and Figure 5c shows the modified design 2. [Figure 6] The diagram shows the non-uniform gas distribution in two improved process boxes, where Figure 6a) is the simulated gas streamline of improved design 1 (Figure 5b)), and Figure 6b) is the simulated gas streamline of improved design 2 (Figure 5C). [Figure 7] This is a schematic diagram showing the connection relationship between the first gas distribution device and the first communication device designed in the process chamber gas inlet section according to the present invention. [Figure 8] This is another schematic diagram of the design of the process chamber gas inlet section according to the present invention. [Figure 9] This is a schematic diagram of the structure of the first gas distribution device according to the present invention. [Figure 10] This is a schematic diagram showing the connection relationship between the second gas distribution device and the third communication device designed in the process chamber gas outlet section according to the present invention. [Figure 11] This is a schematic diagram of the structure of the gas inlet when the first gas distribution device according to the present invention is semi-cylindrical. [Figure 12] This is a schematic diagram of the gas outlet structure when the second gas distribution device according to the present application is semi-cylindrical. [Figure 13]This figure shows a comparison of the gas velocity in the X-axis between the standard design and the slot die design of the present invention, using the designs shown in Figures 11 and 12. [Figure 14] This figure shows a comparison of the gas velocity in the Y-axis between the standard design and the slot die design of the present invention, using the designs shown in Figures 11 and 12. [Figure 15] This figure shows a comparison of the gas velocity in the Z-axis between the standard design and the slot die design of the present invention, using the designs shown in Figures 11 and 12. [Figure 16] These are schematic diagrams of simulated gas streamlines inside the process chamber when the designs shown in Figures 11 and 12 are adopted. [Figure 17] This is a schematic diagram of the first gas distribution duct at the gas inlet, according to another embodiment employing two rectangular designs of the same size. [Figure 18] This is a schematic diagram of the first gas distribution duct at the gas inlet, according to another embodiment employing two rectangular designs of different sizes. [Figure 19] This is a schematic diagram showing a comparison of gas velocities along the X-axis in the semi-cylindrical and rectangular designs adopted for the first gas distribution duct. [Figure 20] This is a schematic diagram of a second gas distribution duct at the gas outlet, according to another embodiment that employs a rectangular parallelepiped design. [Figure 21] This is a schematic diagram of a second gas distribution duct at the gas outlet, according to another embodiment employing a smaller rectangular design. [Modes for carrying out the invention]

[0059] In this application, in order to solve the problem of mismatch in gas distribution in the photovoltaic power generation manufacturing process box, a first slot-die type gas distribution device and a first communication device are designed at the gas inlet section of the process box inlet, and a second slot-die type gas distribution device and a third communication device are designed at the gas outlet section of the process chamber outlet.

[0060] <Example 1> Referring to Figure 7, for the gas inlet of the process box inlet, instead of the manifold 3 used in the standard design, a first gas distribution device of the slot die type design is designed. In this embodiment, the first gas distribution device 105 and the first communication device 9 are used to distribute gas and transport gas into the process chamber 20. The first communication device 9 is a flattened rectangular prism hollow box, and the two opposing sides of this hollow box are lidless and used as an inlet and an outlet, respectively. The shape and size of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same. The length of the hollow box is greater than the width, and the width is greater than the height. The two lidless sides of the hollow box are parallel to the height direction of the hollow box, that is, the inlet of the hollow box is elongated.

[0061] Referring to Figure 8, at the gas inlet of the process box, the gas passes in the following order before being transported to the process chamber 20: intake duct inlet 1, intake duct 2, intake duct outlet, inlet of the first gas distributor (i.e., first inlet) 101, first gas distributor 105, outlet of the first gas distributor (i.e., first outlet) 102, inlet of the first communication device 103 (i.e., inlet of the hollow box), first communication device 9, outlet of the first communication device (i.e., outlet of the hollow box) 5, and inlet of the process chamber 104.

[0062] The inlet of the first communication device is rectangular, and the length and width of this inlet are the same as the length and height of the first communication device (a flattened rectangular prism-shaped hollow box). The shape and size of the first outlet 102, the inlet 103 of the first communication device, the outlet 5 of the first communication device, and the inlet 104 of the process chamber are the same. Furthermore, the cross-sectional size and shape of the airflow remain constant throughout the flow process in which the gas is discharged from the first outlet 102 of the first gas distributor 105 and passes through the inlet 103 of the first communication device, the first communication device 9, the outlet 5 of the first communication device, and the inlet 104 of the process chamber.

[0063] Preferably, the ratio of the length, width, and height of the flattened rectangular hollow box is between 5000:20:1 and 20000:100:1. That is, the length and height The ratio is between 5000:1 and 20000:1.

[0064] Furthermore, the first gas distribution device 105 includes a first gas distribution duct 1051, the first inlet being located at the top of the first gas distribution duct, preferably at the top center of the first gas distribution duct, and the first outlet being located at a lower position than the first inlet. The shape and size of the first inlet depend on the shape and size of the intake duct 2, and the first outlet is elongated.

[0065] Furthermore, referring to Figure 9, the first gas distribution device 105 may include a plurality of first gas distribution ducts 1051. For example, m first gas distribution ducts 1051 are connected in sequence to constitute one first gas distribution device 105. For convenience, the m first gas distribution ducts are also connected to each other using the first connecting device 9 described above, and here the first connecting device 9 used between the m first gas distribution ducts is referred to as the second connecting device 7. Note that the second connecting device 7 and the first connecting device 9 are substantially the same device, and the terms "first" and "second" used herein are used only to distinguish between different installation locations of the connecting devices.

[0066] Furthermore, the above-mentioned m=2 enables multiple uniform gas distribution processes, improving the uniformity of the gas entering the process chamber. For example, in Figure 9, the first inlet is located at the top center of the first first gas distribution duct 1051, and the first outlet is located lower than the top of the last first gas distribution duct 1051. The gas enters from the top of the first first gas distribution duct 1051, where the first uniform gas distribution process takes place. Next, the gas is transported into the last first gas distribution duct 1051 via the second communication device 7, where the second uniform gas distribution process takes place. Finally, the gas is transported to the process chamber 20 via the first communication device 9. As a result, at the gas inlet located at the process box entrance, the gas enters the first gas distribution device 105 from the intake duct 2 before entering the process chamber. Within the first gas distribution device 105, at least two uniform gas distribution processes are carried out, and as the gas passes through the second communication device 7, the first outlet 102, the first communication device 9, and the process chamber entrance 104, the area, shape, and height of the airflow cross-section remain constant, effectively ensuring uniform distribution of the gas entering the process chamber.

[0067] Furthermore, referring to Figure 10, according to the present invention, a second gas distribution device with a slot die design is designed for the gas outlet section at the process box outlet, and the design concept of this second gas distribution device 13 is similar to that of the first gas distribution device 105. Specifically, the second gas distribution device 13 has a second inlet 106 and a second outlet 107, the process chamber outlet 11 is connected to the second inlet 106, and the second outlet 107 is connected to the exhaust duct 14. The process chamber outlet 11 and the second inlet 106 (second gas distribution device 13) are connected via a third communication device 12, and the third communication device 12 and the first communication device 9 have the same structure. The third communication device 12, the first communication device 9, and the second communication device 7 are substantially the same device, and the terms "third," "first," and "second" used herein are used only to distinguish between different installation locations of the communication devices. After processing and manufacturing of the photovoltaic device in the process chamber, the gas flows out from the process chamber outlet 11 and into the second gas distribution device 13 via the third communication device 12. Referring to the description of the gas inlet of the process chamber mentioned above, at the gas outlet of the process chamber, the process chamber outlet 11, the inlet of the third communication device 12, the outlet of the third communication device 12, and the second inlet 106 are all elongated, and their shape and size are the same as the side of the hollow box of the third communication device 12 without a lid. That is, the length of the process chamber outlet 11, the inlet of the third communication device 12, the outlet of the third communication device 12, and the second inlet 106 are the same as the length of the third communication device 12, and the width of the process chamber outlet 11, the inlet of the third communication device 12, the outlet of the third communication device 12, and the second inlet 106 are the same as the width of the third communication device 12. The area and shape of the airflow cross-section of the gas flowing out from the process chamber outlet 11 are the same throughout the entire flow process.

[0068] The second gas distribution device 13 includes a second gas distribution duct, the second outlet is located at the top of the second gas distribution duct (preferably at the top center of the second gas distribution duct), and the second inlet is located lower than the second outlet. The second inlet is positioned along the length of the second gas distribution duct and its length is the same as the length of the second gas distribution duct. As can be seen from the above, the process chamber outlet 11, the third communication device 12, and the second gas distribution device 13 are of the same length.

[0069] Since there is no need to redistribute the gas multiple times, the second gas distribution device 13 uses only one second gas distribution duct for gas collection, and the gas in the second gas distribution duct is uniformly distributed, then passes through the exhaust duct 14, and finally exits from the exhaust duct outlet 15.

[0070] Furthermore, the statement that the height of the second inlet of the process chamber outlet is greater than the height of the first outlet of the process chamber outlet means that the height of the process chamber outlet is greater than the height of the inlet of the process chamber.

[0071] <Example 2> In this embodiment, the first gas distribution duct 1051 is semi-cylindrical, and referring to Figure 11, Figure 11a) is a plan view and Figure 11b) is a side view. The arrows indicate the movement of the airflow. To avoid unnecessary redundancy, only the differences from the first gas distribution device in the above-described embodiment will be explained.

[0072] In this embodiment, the first gas distribution device includes two semi-cylindrical ducts, the first gas distribution duct 6 and the second gas distribution duct 6. The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground.

[0073] The first inlet 101 is provided on the curved surface (preferably in the center of the curved surface) of the first semi-cylindrical duct 6, and the height of the first inlet 101 from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct.

[0074] Two semi-cylindrical ducts are connected to each other via a second communication device 7, and the first outlet 102 is provided on the curved surface of the second semi-cylindrical duct 8, and its height is lower than that of the first inlet 101. If there are multiple first gas distribution ducts in the first gas distribution device, each first gas distribution duct is further provided with a gas flow orifice 1052 to connect the first gas distribution ducts (6, 8) to the second communication device 7.

[0075] The first outlet is provided along the length of the semi-cylindrical duct 8, and if the distance between the two semicircular planes of the semi-cylindrical duct 8 is taken as the length of the semi-cylindrical duct 8, then the length of the first outlet 102 is the same as the length of the semi-cylindrical duct 8. Furthermore, the gas undergoes its first uniform distribution in the first semi-cylindrical duct 6 and is transported to the second semi-cylindrical duct 8 via the second communication device 7. In the second semi-cylindrical duct 8, the gas undergoes its second uniform distribution and is transported to the process chamber 20 via the first communication device 9. The height, area, and shape of the airflow cross-section at each inlet / outlet before the gas enters the process chamber are the same.

[0076] Since two gas uniform distribution processes are performed using two semi-cylindrical ducts (6, 8), the uniformity of gas distribution in the first gas distribution duct along the Z-axis is greatly improved. In order to achieve a layered airflow in the second communication device 7 and the first communication device 9, the ratio of the length, width, and height of the second communication device 7 and the first communication device 9 is between 5000:20:1 and 20000:100:1.

[0077] In this embodiment, the second gas distribution duct is semi-cylindrical. Referring to Figure 12, Figure 12a) is a plan view and Figure 12b) is a side view. The arrows indicate the movement of the airflow. To avoid unnecessary redundancy, only the differences from the second gas distribution device in the above-described embodiment will be explained.

[0078] In this embodiment, the second gas distribution device includes a semi-cylindrical second gas distribution duct, the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground. The second inlet 106 is provided on the curved surface of the semi-cylindrical duct, and the height of the second inlet from the rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct. The second outlet 107 is located in the center of the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct.

[0079] To evaluate the effect of the gas inlet and gas outlet design of the process box in this embodiment on gas uniformity within the process chamber, a fluid dynamics simulation similar to that in Figures 4 and 6 was performed. In the simulation settings, the top and remaining boundaries of the process box were set to normal walls, i.e., without a gas outlet. The gas was ejected from the left inlet and away from the right outlet. The remaining boundary conditions remained the same as in Figures 4 and 6.

[0080] Figures 13, 14, 15, and 16 show the results of related simulations of gas velocity and gas streamline distribution along the X, Y, and Z axes, respectively.

[0081] Figure 13 shows a comparison of the gas velocity along the X-axis between the standard design (Figure 4) and the slot-die type gas distribution device design in the embodiment of the present application (Figures 11 and 12). In Figure 13, in the case of the standard design, the circular line represents the gas velocity distribution, and each circle represents the gas outlet velocity at outlet 5. In the case of the slot-die type design, the gas velocity in Figure 13 is a continuous solid line because the outlet 5 with a rectangular edge is applied. Thanks to the slot-die type design, it is clear that the velocity distribution of the related gas along the X-axis is more uniform than in the standard design. In the standard design, the difference between the maximum and minimum gas velocity among the 20 outlets 5 is approximately 1 m / s. In the case of the slot-die type gas distribution device design in the embodiment of the present application, the change in gas velocity is approximately 0.1 m / s, meaning that the distribution of gas injection along the Z-axis along the X-axis is more uniform than the gas injection in the standard design.

[0082] Figures 14 and 15 show a comparison of the gas velocities in the Y and Z axes between the standard design and the slot-die type gas distribution device design of the embodiment of this application, respectively. In the standard design, the change in gas velocity in the Y and Z axes is approximately 0.1 m / s, whereas in the slot-die type design, the change in gas velocity is negligible.

[0083] Figure 16 shows the gas distribution streamlines within the process chamber of the slot die design of the embodiment of the present invention. It clearly shows that neither "finger" shaped gas jets nor gas vortices are observed. The gas streamlines are parallel to each other, resulting in a more uniform distribution of gas flow rate throughout the process chamber.

[0084] <Example 3> To avoid unnecessary redundancy, only the differences from the above-described embodiment will be explained. Referring to Figure 17, Figure 17a) is a plan view and Figure 17b) is a side view. The arrows indicate the movement of the airflow. In this embodiment, the first gas distribution duct 1051 in the first gas distribution device is rectangular, and the two first gas distribution ducts 1051 are the same size. By using the two first gas distribution ducts 1051 to realize two gas uniform distribution processes, a similar uniform gas distribution can be achieved within the process chamber 20.

[0085] <Example 4> To avoid unnecessary redundancy, only the differences from the above-described embodiment will be explained. Refer to Figure 18, where Figure 18a) is a plan view and Figure 18b) is a side view. The arrows indicate the movement of the airflow. In this embodiment, the first gas distribution duct 1051 in the first gas distribution device is rectangular, and the two first gas distribution ducts 1051 are of different sizes. Since the size of the first first gas distribution duct 1051 is larger than the size shown in Figure 17, the gas flow rate distribution along the Z-axis at outlet 5 can be slightly improved compared to the design in Figure 17.

[0086] Figure 19 shows a comparison of the gas velocity along the X-axis for the two designs shown in Figures 17 and 18, and these two designs are also compared with the gas distribution effect in the case of the semi-cylindrical design shown in Figure 13. It can be seen that the airflow velocity delivered from the larger rectangular first gas distribution duct 1051 is more uniform than the airflow velocity delivered from the smaller rectangular first gas distribution duct 1051, which is similar to the semi-circular design.

[0087] <Example 5> To avoid unnecessary redundancy, only the differences from the embodiments described above will be explained. Referring to Figure 20, Figure 20a) is a plan view and Figure 20b) is a side view. The arrows indicate the movement of the airflow. In the embodiments of the present application, an alternative design for the process chamber gas outlet is provided. In the process chamber gas outlet, the second gas distribution duct of the second gas distribution device is designed in a rectangular shape.

[0088] <Example 6> To avoid unnecessary redundancy, only the differences from the embodiments described above will be explained. Referring to Figure 21, Figure 21a) is a plan view and Figure 21b) is a side view. The arrows indicate the movement of the airflow. In the embodiment of the present application, at the gas outlet of the process chamber, the second gas distribution duct of the second gas distribution device is designed in a rectangular shape, and the size of the rectangular second gas distribution duct is smaller than the size in Embodiment 5 described above.

[0089] As described above, this application provides a slot-die type gas distribution device for solar power generation manufacturing, and provides a slot-die type gas distribution structure design for both the gas inlet and gas outlet. While the standard design uses a manifold with multiple outlet pipes, this application sets each inlet and outlet in the gas flow process in an elongated shape, thereby achieving a more uniform gas distribution within the process box and effectively improving the semiconductor performance and appearance of the solar power generation product.

[0090] This application is not limited to the specific embodiments described above, and all modifications made by those skilled in the art from the above-described concept without creative work are included within the scope of protection of this application. [Explanation of Symbols]

[0091] 1. Inlet of the intake duct 2. Intake duct 3 Gas Manifold 4 Transport pipe 5. First communication device outlet 6, 8, 1051 First gas distribution duct 7. Second communication device 9. First connecting device 10 Bowl-shaped hole 11 Process room exit 12 Third connecting device 13. Second gas distribution device 14 Exhaust duct 15 Exhaust duct outlet 16 process boxes 17 Bottom Plate 18 circuit boards 19 Cover Plate 20 Process Rooms 101 First Entrance 102 First Exit 103 Entrance to the hollow box 104 Entrance to the process room 105 First gas distribution device 106 Second Entrance 107 Second Exit 1052 Gas flow orifice

Claims

1. A slot die type gas distribution device for manufacturing solar power generation devices, The process chamber includes a first gas distribution device located at the inlet, the first gas distribution device having a first inlet and a first outlet, the first inlet being connected to an intake duct and the first outlet being connected to the inlet of the process chamber. The first outlet and the inlet of the process chamber are connected by a first communication device, the first communication device being a flattened rectangular prism-shaped hollow box, the two opposing sides of the hollow box being lidless and used as an inlet and outlet respectively, the shape and size of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber being the same, the length of the hollow box being greater than its width and the width being greater than its height, the two lidless sides of the hollow box being parallel to the height direction of the hollow box, that is, the inlet of the hollow box being elongated, The ratio of the length to height of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber is between 5000:1 and 20000:

1. The process chamber has one inlet in the longitudinal direction on the surface where the inlet of the process chamber is formed in the process chamber, The inlet and outlet of the first communication device are formed on a surface perpendicular to the width direction of the hollow box. A slot-die type gas distribution device for manufacturing solar power generation devices, characterized by the following features.

2. The ratio of length, width, and height of the aforementioned flattened rectangular hollow box is between 5000:20:1 and 20000:100:

1. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 1.

3. The first gas distribution device includes a first gas distribution duct. The first inlet is provided at the top of the first gas distribution duct such that the direction of gas flow passing through the first inlet is perpendicular to the bottom surface of the first gas distribution duct, and the top of the first gas distribution duct is the highest point of the first gas distribution duct from the ground. The first exit is located at a lower position than the first entrance. The slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 2.

4. The first inlet is located at the top center of the first gas distribution duct. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 3.

5. The first outlet is elongated, and is positioned along the length of the first gas distribution duct, with a length equal to the length of the first gas distribution duct; that is, the length of the first gas distribution duct and the length of the first communication device are the same. The slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 4.

6. The height of the hollow box is perpendicular to the ground so that the inlet and outlet of the hollow box are at the same height from the ground, that is, the height of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are at the same height from the ground. The slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 5.

7. The first gas distribution device includes m first gas distribution ducts, where m is 2 or more, and the m first gas distribution ducts are connected in sequence, and two adjacent first gas distribution ducts are connected to each other via a second connecting device so that multiple gas distribution processes can be realized, and the second connecting device and the first connecting device have the same structure. The first inlet is provided in the first gas distribution duct at the starting end, and the first outlet is provided in the first gas distribution duct at the ending end. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 6.

8. The first gas distribution duct is semi-cylindrical or rectangular in shape. A slot die type gas distribution device for manufacturing a solar power generation device according to feature 7.

9. When the first gas distribution duct is semi-cylindrical, The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground. The first inlet is provided on the curved surface of the semi-cylindrical duct, and the height of the first inlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct. The slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 8.

10. The first inlet is located in the center of the curved surface of the semi-cylindrical duct. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 9.

11. The first outlet is provided on the curved surface of the semi-cylindrical duct, and the height of the first outlet from the rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct. The distance between the two semicircular planes of the semi-cylindrical duct is defined as the length of the semi-cylindrical duct, and the first outlet is provided along the length direction of the semi-cylindrical duct. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to the feature described in 10.

12. Multiple of the first gas distribution ducts are the same size. A slot die type gas distribution device for manufacturing a solar power generation device according to feature 11.

13. Multiple first gas distribution ducts have different sizes. A slot die type gas distribution device for manufacturing a solar power generation device according to feature 11.

14. The process chamber further includes a second gas distribution device located at the outlet of the process chamber, the second gas distribution device having a second inlet and a second outlet, the outlet of the process chamber being connected to the second inlet, and the second outlet being connected to an exhaust duct. The outlet of the process chamber and the second inlet are connected via a third communication device, and the third communication device and the first communication device have the same structure. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 1.

15. The second gas distribution device includes a second gas distribution duct. The second outlet is located at the top of the second gas distribution duct such that the flow direction of the gas flowing out from the second outlet is perpendicular to the bottom surface of the second gas distribution duct, the second inlet is located at a lower position than the second outlet, and the top of the second gas distribution duct is the highest point of the second gas distribution duct from the ground. The second inlet is elongated, and is positioned along the length of the second gas distribution duct, with a length equal to the length of the second gas distribution duct; that is, the length of the second gas distribution duct and the length of the third communication device are the same. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 14.

16. The height of the second entrance is greater than the height of the first exit. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 15.

17. The second gas distribution device includes one second gas distribution duct, The second gas distribution duct is semi-cylindrical or rectangular in shape. A slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 16.

18. When the second gas distribution duct is semi-cylindrical, The rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground. The second inlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second inlet from the rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct. The second outlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is equal to the radius of the semi-cylindrical duct. A slot die type gas distribution device for manufacturing a solar power generation device according to the features of 17.

19. The intake duct and the exhaust duct are curved pipes. The slot die type gas distribution device for manufacturing a photovoltaic power generation device according to feature 18.

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