Spot heating by beam movement in horizontal rotational motion

Abstract

To provide an apparatus and method for improving heating uniformity for semiconductor processing in a thermal process chamber.SOLUTION: A process chamber 100b comprises a first window 108, a second window 110, multiple lamp bulbs 141, a substrate support (susceptor 106) disposed between the first and second windows to support the substrate 102, and a spot heating source assembly 170 having a motorized rotatable radiant spot heating source, which is disposed over the first window and on an upper surface of a chamber lid 103B and provides radiant energy through the first window.SELECTED DRAWING: Figure 1B

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods for semiconductor processing, and more particularly, to a heat treatment chamber and a spot heater used therein.

Background Art

[0002] Semiconductor substrates are processed for a wide range of applications, including the manufacture of integrated devices and microdevices. During processing, the substrate is positioned on a substrate support within a processing chamber. The substrate support is supported by a support shaft that is rotatable about a central axis. By precisely controlling the heat source, it is possible to heat the substrate within very strict tolerances. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003] Despite the precise control of substrate heating, it has been observed that valleys (less deposition) are formed at certain locations on the substrate. Therefore, there is a need for an apparatus to improve the uniformity of heating.

Summary of the Invention

[0004] Embodiments of the present disclosure generally relate to apparatuses and methods for semiconductor processing, and more particularly, to a spot heat source, a heat treatment chamber including the same, and a method of using the same. In one or more embodiments, the processing chamber includes a first window, a second window, a substrate support disposed between the first window and the second window, and an electric rotatable radiation spot heater disposed above the first window and configured to provide radiant energy through the first window.

[0005] In one or more embodiments, the spot heat source assembly includes a collimator holder and a rotary stage disposed on a first surface, and the collimator holder is attached to the rotary stage at an acute angle with respect to the first surface.

[0006] In one or more embodiments, a method for spot heating includes placing a substrate on a substrate support in a processing chamber, operating a spot heat source mounted on a rotary stage to project radiant energy onto the substrate, moving the spot heat source along an arc-shaped path to adjust the collision point of the projected radiant energy on the substrate, and heating a desired area of ​​the substrate with the projected radiant energy.

[0007] A more detailed description of the disclosure, which is briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings, so that the above features of the disclosure can be understood in detail. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered limiting in scope, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0008] [Figure 1A] Schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 1B] Schematic cross-sectional side view of a processing chamber according to another embodiment. [Figure 2A] Schematic perspective side view of the radiation path of a spot heat source assembly according to one or more embodiments. [Figure 2B] Schematic top view of the spot heat source assembly of Figure 2A according to one or more embodiments. [Figure 2C] Schematic top view of a reflector according to one or more embodiments [Figure 3A] Schematic cross-sectional view of the spot heat source assembly of Figure 2A according to one or more embodiments. [Figure 3B] Schematic cross-sectional view of the spot heat source assembly of Figure 2A according to one or more embodiments. [Figure 3C] Schematic cross-sectional view of the spot heating assembly of Figure 2A according to one or more embodiments. [Figure 4] Flowchart of a method according to one or more embodiments [Modes for carrying out the invention]

[0009] For ease of understanding, the same reference numeral is used to indicate identical elements common to the drawings, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0010] Embodiments of this disclosure generally relate to apparatus and methods for semiconductor processing, and more particularly to heat treatment chambers and spot heating assemblies used therein. The heat treatment chamber includes a substrate support, a first plurality of heating elements disposed on the substrate support, and one or more spot heating source assemblies disposed on the first plurality of heating elements. One or more spot heating source assemblies are used to provide localized heating to areas on a substrate placed on the substrate support where the temperature is lower during processing. By locally heating the substrate, the temperature profile is improved and the uniformity of deposition is improved.

[0011] Where used herein, “substrate” or “substrate surface” generally refers to any substrate surface on which processing is performed. For example, a substrate surface may include, depending on the application, silicon, silicon oxide, doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire, and any other material, such as metals, metal nitrides, metal alloys, and other conductive or semiconducting materials. A substrate or substrate surface may also include silicon dioxide, silicon nitride, organosilicates, and carbon-doped silicon oxide or silicon nitride materials. The substrate itself is not limited to a specific size or shape. While the embodiments described herein generally refer to circular 200 mm, 300 mm, or 450 mm substrates, other shapes such as polygonal, square, rectangular, curved, or other non-circular workpieces may be used according to the embodiments described herein.

[0012] Figure 1A is a schematic cross-sectional side view of a processing chamber 100a according to one embodiment. The processing chamber 100a is a processing chamber for performing heat treatment such as epitaxial deposition. The processing chamber 100a includes a chamber lid 103, a chamber body 148, a cover 134, and arrays of radiant heating lamps 104a and 104b for heating, as well as a susceptor 106 located inside the processing chamber 100a. The arrays of radiant heating lamps 104a and 104b are located above and below the susceptor 106, but either the upper array 104a or the lower array 104b of radiant heating lamps may be omitted. The arrays of radiant heating lamps 104a and 104b provide a total lamp power between approximately 10 kW and approximately 60 kW. The arrays 104a and 104b of radiant heating lamps heat the substrate 102 to a temperature between approximately 500 degrees Celsius and approximately 900 degrees Celsius; however, other temperature ranges are also intended.

[0013] The arrays 104a and 104b of radiant heating lamps are independently controlled within their zones to control the temperature of different areas of the substrate 102 as the processing gas passes over them, thus facilitating the deposition of material onto the upper surface of the substrate 102. Although not discussed in detail herein, the deposition material may include, among other materials, silicon, doped silicon, germanium, doped germanium, silicon germanium, doped silicon germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride.

[0014] The radiant heating lamp arrays 104a, 104b include a radiant heat source, indicated herein as a lamp bulb 141. Each lamp bulb 141 is connected to a distribution board 152, such as a printed circuit board (PCB), through which power is supplied to each lamp bulb 141. The radiant heating lamp arrays 104a, 104b located below the second window 110 are positioned within a lamp head 145 and may be cooled during or after processing by a cooling fluid introduced, for example, into a channel 149 located between the radiant heating lamp arrays 104a, 104b.

[0015] The susceptor 106 is a disc-shaped substrate support as shown in the figure, but alternatively, it may be a ring-shaped substrate support that supports the substrate 102 from its edges and exposes the back surface of the substrate 102 to heat from the radiant heating lamp 104. The susceptor 106 is formed from silicon carbide or silicon carbide-coated graphite to absorb radiant energy from the radiant heating lamp 104 and conduct that radiant energy to the substrate 102 in order to facilitate heating of the substrate 102.

[0016] The susceptor 106 is located between the first window 108 and the second window 110 within the processing chamber 100a. Each of the first window 108 and the second window 110 is dome-shaped. However, it is intended that the first window 108 and the second window 110 may have other shapes, including planes. A base ring 112 is positioned between the first window 108 and the second window 110. Each of the first window 108 and the second window 110 is optically transparent to the radiant energy provided by the arrays 104a and 104b of radiant heating lamps. The first window 108 is positioned between the chamber lid 103 and the susceptor 106. The upper array 104a of the radiant heating lamps is positioned above the first window 108. A reflector 154 facilitates the direction of thermal energy from the upper array 104a of the radiant heating lamps. Similarly, the lower array of radiant heating lamps is positioned below the second window 110.

[0017] The susceptor 106 includes a shaft or stem 118 that is coupled to the motion assembly 120. The motion assembly 120 includes one or more actuators and / or adjustment devices that provide for the movement and / or adjustment and / or rotation of the stem 118 and / or the susceptor 106. The susceptor 106 can rotate between about 5 RPM and about 100 RPM, for example, between about 10 RPM and about 50 RPM. While located at the processing position, the susceptor 106 divides the processing chamber 100a into a processing gas region 136 above the susceptor 106 and a purge gas region 138 below the susceptor 106. The base ring 112 is provided with a processing gas inlet 114, a purge gas inlet 164, and a gas outlet 116 to facilitate exposure of the substrate 102 to the processing gas during processing. A processing gas source 151 provides processing gas to the processing gas inlet 114, and a purge gas source 162 provides purge gas to the purge gas inlet 164. The processing gas and the purge gas flow through the gas outlet 116 to the exhaust assembly 157.

[0018] A circular shield 146 is disposed around the susceptor 106 and is coupled to the base ring 112 and / or the liner 163 to prevent or minimize leakage of heat from the radiant heating lamp 104. Additionally, a heat shield 175 is disposed over the reflector 154 to block unwanted heat transfer. The heat shield 175 is made of a metallic material, such as aluminum, and is coated with gold. The substrate temperature can be measured indirectly by a sensor configured to measure the temperature at the bottom of the susceptor 106. The sensor can be a pyrometer disposed in a port formed within the lamp head 145. Additionally, one or more temperature sensors 153, such as pyrometers, are oriented to measure the temperature on the device side of the substrate 102. The one or more temperature sensors 153 are disposed through the chamber lid 103 and are configured to detect the substrate 102 through an opening formed through the heat shield 175.

[0019] The processing chamber 100a further includes one or more spot heat source assemblies 170 (two are shown). Each spot heat source assembly 170 is, for example, a laser system assembly. The power density of the laser system assembly is approximately 1 W / cm². 2 From approximately 1000W / cm² 2 For example, about 1 W / cm² 2 From approximately 200W / cm² 2 For example, approximately 200 W / cm² 2 From approximately 1000W / cm² 2 The range may be as follows. Each spot heat source assembly 170 is connected to and positioned on the upper surface of the chamber lid 103. Each spot heat source assembly 170 directs radiant energy 132 through an opening 130 in a reflector 154 (which may have an optically transparent window) and through a first window 108 to the susceptor 106. The radiant energy 132 from each spot heat source assembly 170 is directed towards the susceptor 106 so as to strike one or more predetermined locations on the substrate 102 positioned on the susceptor 106. The radiant energy 132 from the spot heat source assembly 170 selectively heats predetermined locations on the substrate, resulting in a more uniform substrate temperature (and therefore more uniform deposition) during processing. The thermal energy provided by each spot heat source assembly 170 is directed to a location on the substrate 102 in response to temperature measurements from a temperature sensor 153 and one or more commands from a controller 150.

[0020] Although two spot heat source assemblies 170 are shown inside the processing chamber 100a, it is intended that one or more spot heat source assemblies 170, for example two, three, or four spot heat source assemblies 170, may be mounted on the processing chamber 100a. Multiple spot heat source assemblies 170 can be mounted, particularly because the bulk of the mounting system for each spot heat source assembly 170 is advantageously reduced compared to spot heat source assemblies mounted on a track.

[0021] The above-described processing chamber 100a is controlled by a system controller based on a processor such as the controller 150. For example, the controller 150 is configured to control the pressure, temperature, and flow rate within the processing chamber 100a. As a further example, the controller 150 is configured to operate the spot heat source assembly 170 to promote improved temperature uniformity of the substrate 102. The controller 150 includes a programmable central processing unit (CPU) 156 that can operate with a memory 155, support circuits 158, and a mass storage device, an input control unit, and a display unit (not shown), such as a power supply, clock, cache, input / output (I / O) circuits, etc., which are connected to various components of the processing chamber 100a to facilitate the control of substrate processing. The controller 150 also includes hardware for monitoring substrate processing through sensors within the processing chamber 100a, including sensors for monitoring the flow of precursors, process gases, and purge gases. Other sensors that measure system parameters such as substrate temperature and chamber pressure can also provide information to the controller 150.

[0022] FIG. 1B shows a cross-sectional view of a processing chamber 100b according to one or more embodiments. The processing chamber 100b is similar to the processing chamber 100a shown in FIG. 1A, but utilizes a different lid 103B. The lid 103B is connected to a clamping ring 160. A plurality of radiant heating lamps 104b are attached to the lid 103B in proximity to a reflector 154. One or more temperature sensors 153 are connected to the lid 103B and positioned to facilitate temperature measurement of the substrate 102. One or more spot heat source assemblies 170 (one is shown) are also disposed on the upper surface of the chamber lid 103B and positioned to direct radiant energy towards the substrate 102.

[0023] Figure 2A shows a perspective view of a spot heat source assembly 170. The spot heat source assembly 170 includes a radiant spot heat source 201, a rotary stage 202, a rotary plate 205, and a cooling plate 203. The radiant spot heat source 201 is positioned on the rotary plate 205, which is then positioned on the rotary stage 202, which is then positioned on the cooling plate 203. The rotary stage 202 is positioned on a first surface 284. The rotary plate 205 is positioned parallel to the first surface 284 and is rotatable within or on the rotary stage 202 to rotate the radiant spot heat source 201. Bearings such as ball bearings and / or sealed bearings configured to withstand vacuum (e.g., vacuum-sealed) or high pressure without leakage can be positioned between the rotary stage 202 and the rotary plate 205 to facilitate movement between them. In one or more embodiments, the radiant spot heat source 201 is mounted at an acute angle 285 to the first surface 284. The acute angle 285 can be in the range of approximately 75 to 85 degrees. However, other ranges are also intended, for example, from approximately 60 to 90 degrees. The radiant spot heat source 201 transmits energy 220 at the acute angle 285 through the rotary plate 205, rotary stage 202, and cooling plate 203. The opening formed through the rotary plate 205, rotary stage 202, and cooling plate 203, which receives the radiant energy, may have side walls formed at an angle matching the acute angle 285. The radiant spot heat source 201 is motorized (e.g., driven by a motor or other mechanical actuator), rotatable, and configured to provide radiant energy through the first window 108.

[0024] The acute angle 285 to which the radiant spot heat source 201 is attached allows the radiant spot heat source 201 to deliver energy 220 to the substrate 102 at an acute angle to the plane of the substrate 102, which is approximately perpendicular to the first surface 284. By rotating the rotary plate 205 to rotate the radiant spot heat source 201, the energy 220 supplied by the radiant spot heat source 201 can heat the substrate 102 in a circular or semicircular (e.g., arched or arc-shaped) pattern 230. A fully circular pattern 230 is shown in Figure 2A, but a semicircular pattern is also intended.

[0025] Figure 2B shows a semicircular pattern 230 formed on the substrate 102. In one example, the pattern 230 may be an arc between 60 and 180 degrees, such as an arc between approximately 60 and 120 degrees. In Figure 2B, a 180-degree path is shown as a solid line. However, rotation up to 360 degrees is intended to be possible, if necessary. In one embodiment, one or more rotation stoppers are positioned on the rotary stage 202, allowing the rotary plate 205 to rotate on the rotary stage 202 by a set amount defined by the one or more rotation stoppers. The one or more rotation stoppers restrict the rotation of the rotary plate 205 to generate the desired pattern 230. In one example, these stoppers may be two pillars extending vertically from the top surface of the rotary stage 202. An extension extending cantilevered from the rotary plate 205 is positioned between the pillars and moves between them as the rotary plate 205 rotates. The extension of the rotary plate 205 contacts the support column as the rotary plate rotates, thereby limiting the rotation of the rotary plate. The support column is intended to be positioned in a predetermined location to allow a predetermined angle of rotation of the rotary plate.

[0026] The radiant spot heat source 201 is configured to heat any point from the center of the substrate 102 to its outer edge. The pattern 230 can extend, for example, from the center of the substrate 102 to the outer periphery of the substrate 102. Because the radiant spot heat source 201 is mounted at an angle, the location of the energy 220 relative to the distance from the center of the substrate 102 can be determined by a pre-programmed algorithm. In some examples, the position of the radiant spot heat source 201 remains fixed during processing. In other examples, the spot heat source is moved during processing while applying radiant energy. In such examples, the collision point of the radiant energy can be swept back and forth across the substrate surface as the substrate rotates.

[0027] The rotary stage 202 is positioned on a cooling plate 203 which is placed on the chamber lid 103. In one or more embodiments, the cooling plate 203 includes aluminum. In one or more embodiments, the rotary stage 202 is positioned in direct contact with the cooling plate 203 to facilitate heat transfer between them. The rotary stage 202 and the cooling plate 203 can be formed from materials having relatively high thermal conductivity, such as aluminum or aluminum alloy materials. The cooling plate 203 includes channels 240 through which a cooling fluid, such as water, flows to facilitate temperature control of the spot heat source assembly 170. In one or more embodiments, the channels 240 include one or more pipes made of aluminum, stainless steel, and / or copper.

[0028] The rotary stage 202 is configured to rotate about a vertical axis 207. In one or more embodiments, the rotary stage 202 is connected to an actuator, such as a motor, configured to rotate the rotary plate 205 around the rotary stage 202. The motor can be any suitable motor, such as a precision-optimized optical-grade motor, such as a stepper motor. The rotary stage 202 may include multiple bearings to facilitate the rotation of the rotary plate 205 about the vertical axis 207.

[0029] In one or more embodiments, the radiant spot heat source 201 includes a collimator holder 204. The collimator holder 204 is mounted to the rotary stage 202 at an acute angle to the first surface 284. The radiant spot heat source 201 also includes a collimator 206 disposed within the collimator holder 204 and operable to provide radiant spot heating to a region of the susceptor 106 and / or a substrate 102 disposed thereon. The collimator holder 204 facilitates the support of the collimator 206. The collimator holder 204 can house one or more lenses therein. The collimator 206 can receive optical energy from an optical energy source such as a laser, or facilitate the support of an optical energy source. As shown in Figure 2A, an optical energy source such as a laser 299 is engaged with the collimator 206. In one example, each of the collimator holder 204 and the collimator 206 includes a housing formed from aluminum.

[0030] The power applied to the radiant spot heat source may vary depending on the use case. For example, the power may be less than 100W, e.g., from about 10W to about 90W, e.g., from about 20W to about 80W, e.g., from about 40W to about 60W. The power may change during a single application depending on the position of the heated spot relative to the center of the substrate 102. In one or more embodiments, the power may remain constant for the duration of a single application or process. The wavelength of the radiant source output may be any suitable value, e.g., from 900nm to 1000nm, e.g., about 970nm.

[0031] Figure 2C is a schematic top view of a reflector 154 according to one or more embodiments. As described above, the reflector 154 includes one or more openings 130 through which radiant energy 132 is directed to the susceptor 106. The openings 130 have a curved shape to adapt to the rotation of the spot heat source assembly 170 when the spot heat source assembly 170 is rotated. Furthermore, a heat shield 175 (shown by dashed lines) is positioned on top of the reflector 154. The heat shield 175 additionally includes openings 295 formed therein. The openings 295 shown herein are curved ovals so that radiant energy 132 (shown in Figure 1A) from the spot heat source assembly 170 can travel in a semicircular pattern 230 shown in Figure 2B. The openings 130 and 295 are angularly offset from each other (but may overlap). The angular misalignment between the openings 130 and 295 allows the radiant energy 132 to traverse the openings 130 and 295 when oriented at an angle to the vertical, due to the rotation of the spot heat source assembly 170 and the vertical misalignment of the openings 130 and 295.

[0032] Figure 3A shows a schematic cross-sectional view of the spot heat source assembly 170 of Figure 2A, with no lens mounted on the collimator holder 204. The spot heat source assembly 170 includes a rotary stage 202, a rotary plate 205, a collimator holder 204, and a collimator 206. Figure 3B shows a schematic cross-sectional view of the spot heat source assembly 170 of Figure 2A, where the collimator holder includes one lens 300 mounted therein. Figure 3C shows a schematic cross-sectional view of the spot heat source assembly 170 of Figure 2A, where the collimator holder includes multiple lenses 300 mounted therein. One or more lenses 300 can be formed from any suitable material, such as quartz, and can be coated with an anti-reflective coating. The one or more lenses 300 positioned within the collimator holder 204 allow for various focal lengths, thereby enabling the heat provided by the spot heat source assembly 170 to contact various spot sizes on the substrate 102. Lens 300 is intended to include concave lenses, convex lenses, Fresnel lenses, or other lens designs.

[0033] Figure 4 schematically illustrates the operation of method 400 for processing a substrate. In some embodiments, method 400 can locally heat the substrate within an epitaxial deposition chamber.

[0034] In operation 410, the substrate is placed on the substrate support of the processing chamber. In some embodiments, the processing chamber may be an epitaxy deposition chamber such as processing chambers 100a and 100b shown in Figure 1A. However, other processing chambers are also intended.

[0035] In operation 420, a spot heat source mounted on a rotary stage is activated to project radiant energy onto the substrate. The activation may include powering a laser source, such as a diode laser source. The activation can heat a region, portion, or specific area of ​​the substrate 102. The activation may last for any length of time, but in certain embodiments, it may be constant irradiation and / or pulsed irradiation. In pulsed irradiation, the laser source may have a duty cycle of less than 50%, e.g., 25%, e.g., 5%, e.g., 1%. The time between pulses in pulsed irradiation may be between about 10 microseconds (μs) and about 10 milliseconds (ms), e.g., between about 0.5 ms and about 5 ms. The activation can heat a desired area, portion, or region of the substrate to reduce cold spots on the substrate and provide a more uniform temperature across the entire substrate. It is further intended that other types of laser or radiant energy sources may be utilized. In one embodiment, the spot heat source is moved along an arc-shaped path to adjust the collision point of the projected radiant energy on the substrate.

[0036] In operation 430, a desired area of ​​the substrate is heated after the activation of a radiant spot heat source mounted on the rotary stage. In one or more embodiments, the substrate support is rotated while heating a desired area of ​​the substrate. In one or more embodiments, the rotary stage is rotated while heating a desired area of ​​the substrate. In one or more embodiments, the substrate support and the rotary stage are rotated while heating a desired area of ​​the substrate. It is also intended to rotate the rotary stage before the activation of the radiant spot heater to direct the radiant energy to a predetermined location.

[0037] While processing chambers for epitaxial deposition are shown and described, the subject matter of this disclosure is intended to be applicable to other processing chambers that can provide a controlled thermal cycle for heating a substrate for processes such as thermal annealing, thermal cleaning, thermochemical vapor deposition, thermal oxidation, and thermal nitriding, regardless of whether the heating element is provided at the top, bottom, or both of the top and bottom of the processing chamber.

[0038] The advantages of this disclosure include reducing temperature inhomogeneity on the substrate and producing a substrate on which the material is deposited more uniformly. Cost reductions are also achieved in the sense that the quality of the substrate is improved and therefore waste is reduced. Additional advantages include precise local heating of the substrate for ultra-fine tuning of temperature uniformity. Further advantages of this disclosure include a reduction in bulk compared to conventional approaches. The reduction in bulk improves the overall lifespan of the assembly due to less wear on the system components. In addition, the disclosed spot heater mitigates the sealing problems present in linear and vertical slotted mounting mechanisms and thus facilitates the maintenance of a high-pressure environment. Maintaining pressure makes it easier to cool the lamp module, thereby extending the lifespan and effectiveness of the processing chamber and its components.

[0039] In summary, embodiments described herein provide an epitaxial deposition chamber including a spot heat source assembly for providing heating to a substrate during processing. Energy can be concentrated to locally heat and adjust specific locations on the substrate. The spot heat source assembly includes a collimator holder mounted on a rotary stage, which is capable of heating a portion of the substrate without allowing light and air to escape from the substrate processing area. The assembly prevents hazards associated with undesirable light and airflow from the substrate processing area and provides a long-lasting assembly with minimized bulk and cost.

[0040] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A processing chamber, The first window, The second window, A substrate support disposed between the first window and the second window, A rotary stage positioned on the first surface above the first window, and Includes a rotatable radiant spot heat source positioned above the first window and configured to provide radiant energy through the first window, The rotatable radiant spot heat source is attached to the rotary stage, the rotatable radiant spot heat source is positioned at an acute angle with respect to the first surface, and the rotary stage is rotatable such that the rotatable radiant spot heat source rotates about an axis of rotation perpendicular to the first surface. Processing chamber.

2. The processing chamber according to claim 1, wherein the rotating shaft passes through the rotary stage, and the rotary stage is connected to an actuator configured to rotate the rotatable radiant spot heat source around the rotary stage.

3. The processing chamber according to claim 2, wherein the rotating shaft also passes through a rotatable radiant spot heat source.

4. The processing chamber according to claim 3, wherein the rotation axis is non-parallel to the longitudinal axis of the rotatable radiant spot heat source.

5. The processing chamber according to claim 4, wherein the cooling plate is arranged on a second surface parallel to the first surface.

6. The processing chamber according to claim 5, wherein the rotary stage is positioned in direct contact with the cooling plate.

7. The processing chamber according to claim 3, wherein the rotatable radiant spot heat source is configured to guide radiant energy in a circular pattern across the surface of a substrate placed on the substrate support.

8. The processing chamber according to claim 7, wherein the distance from the rotatable radiant spot heat source to the circular pattern on the surface of the substrate is equidistant at all points along the circular pattern.

9. The rotatable radiant spot heat source, Collimator holder and, A collimator placed on the collimator holder, The processing chamber according to claim 2, including the processing chamber described in claim 2.

10. The first window and, A substrate support positioned adjacent to the first window, A rotary stage positioned on the first surface, The rotary stage includes a rotatable radiant spot heat source, which is mounted on the rotary stage and configured to supply radiant energy toward the substrate support through the first window, wherein the rotatable radiant spot heat source is positioned at an acute angle with respect to the first plane, and the rotary stage is rotatable such that the rotatable radiant spot heat source rotates about an axis of rotation perpendicular to the first plane. A processing chamber equipped with the following:

11. The processing chamber according to claim 10, wherein the rotating shaft passes through the rotary stage, and the rotary stage is connected to an actuator configured to rotate the rotatable radiant spot heat source around the rotary stage.

12. A collimator positioned on a collimator holder, The processing chamber according to claim 11, further comprising a laser connected to the collimator.

13. The processing chamber according to claim 12, wherein the collimator holder includes at least one lens mounted therein.

14. The processing chamber according to claim 13, wherein the rotation axis is non-parallel to the longitudinal axis of the rotatable radiant spot heat source.

15. The processing chamber according to claim 14, wherein the rotatable radiant spot heat source is configured to guide radiant energy in a circular pattern across the surface of a substrate placed on the substrate support.

16. The processing chamber according to claim 15, wherein the distance from the rotatable radiant spot heat source to the circular pattern on the surface of the substrate is equidistant at all points along the circular pattern.

17. A method for spot heating, Placing a substrate on a substrate support within the processing chamber described in claim 1, The method involves activating a spot heat source mounted on a rotary stage to project radiant energy onto the substrate, wherein the rotary stage is fixedly mounted to the chamber lid of the processing chamber. The spot heat source is rotated to direct the projected radiant energy along a path on the substrate, and Heating a desired region of the substrate with the projected radiant energy, A spot heating method, including the following.

18. The substrate support is rotated while heating the desired region of the substrate. The method according to claim 17, further comprising:

19. The rotary stage is rotated while heating the desired region of the substrate. The method according to claim 17, further comprising:

20. The substrate support and the rotary stage are rotated while heating the desired region of the substrate. The method according to claim 17, further comprising:

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