Light-emitting devices, display devices, photoelectric converters, electronic devices, lighting devices, and mobile bodies

Abstract

To provide a technique advantageous for improving display quality.SOLUTION: A light-emitting device includes pixels each including a light-emitting element, a first transistor supplying current to the light-emitting element according to a brightness signal, and a second transistor supplying the brightness signal to a gate electrode of the first transistor. A diffusion region serving as a source region and a drain region of the second transistor is first conductivity type while a gate electrode of the second transistor is second conductivity type opposite to the first conductivity type.SELECTED DRAWING: Figure 3

Description

Technical Field

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[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving body.

Background Art

[0002] A light-emitting device using a self-luminous element such as an organic electroluminescence (EL) element is known. Patent Document 1 shows a display device including a pixel including a driving transistor that supplies a current corresponding to a luminance signal to a light-emitting element and a writing transistor that supplies the luminance signal to the driving transistor.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] If the luminance signal supplied to the driving transistor changes due to the off-leakage current of the writing transistor, the emission luminance of the light-emitting element changes, and as a result, the image quality of the light-emitting device deteriorates. In order to improve the display quality, it is necessary to suppress the off-leakage current of the writing transistor.

[0005] An object of the present invention is to provide a technique advantageous for improving display quality.

Means for Solving the Problems

[0006] In view of the above problems, an embodiment of the present invention is a light-emitting device in which pixels are arranged, each including a light-emitting element, a first transistor that supplies a current corresponding to a brightness signal to the light-emitting element, and a second transistor that supplies the brightness signal to the gate electrode of the first transistor, wherein the diffusion regions that function as the source region and drain region of the second transistor are of a first conductivity type, and the gate electrode of the second transistor is of a second conductivity type opposite to the first conductivity type. Furthermore, the first transistor and the second transistor are arranged in the second conductivity type well, and the impurity concentration in the channel region of the second transistor is lower than the impurity concentration in the well. It is characterized by the following: [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technology that is advantageous for improving display quality. [Brief explanation of the drawing]

[0008] [Figure 1] A diagram showing an example configuration of the light-emitting device according to this embodiment. [Figure 2] Figure 1 shows an example of the pixel configuration of the light-emitting device. [Figure 3] A plan view showing an example of the pixel configuration of the light-emitting device in Figure 1. [Figure 4] A cross-sectional view showing an example of the pixel configuration of the light-emitting device in Figure 1. [Figure 5] A diagram showing an example configuration of the light-emitting device according to this embodiment. [Figure 6] Figure 5 shows an example of the pixel configuration of the light-emitting device. [Figure 7] Figure 5 is a plan view showing an example of the pixel configuration of the light-emitting device. [Figure 8] Figure 5 is a cross-sectional view showing an example of the pixel configuration of the light-emitting device. [Figure 9] A diagram showing an example configuration of the light-emitting device according to this embodiment. [Figure 10] Figure 9 shows an example of the pixel configuration of the light-emitting device. [Figure 11] Figure 9 is a plan view showing an example of the pixel configuration of the light-emitting device. [Figure 12] Figure 9 is a cross-sectional view showing an example of the pixel configuration of the light-emitting device. [Figure 13]A diagram showing an example of a display device using the light-emitting device of the present embodiment. [Figure 14] A diagram showing an example of a photoelectric conversion device using the light-emitting device of the present embodiment. [Figure 15] A diagram showing an example of an electronic device using the light-emitting device of the present embodiment. [Figure 16] A diagram showing an example of a display device using the light-emitting device of the present embodiment. [Figure 17] A diagram showing an example of a lighting device using the light-emitting device of the present embodiment. [Figure 18] A diagram showing an example of a moving body using the light-emitting device of the present embodiment. [Figure 19] A diagram showing an example of a wearable device using the light-emitting device of the present embodiment.

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined as well. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0010] Referring to FIGS. 1 to 12, the light-emitting device according to the embodiment of the present disclosure will be described. FIG. 1 is a schematic diagram showing a configuration example of the light-emitting device 101 in the present embodiment. FIG. 2 is a circuit diagram showing a configuration example of the pixel 102 arranged in the light-emitting device 101.

[0011] In the following description, a case will be described where a driving transistor 202 is connected to the anode of a light-emitting element 201 arranged in each pixel 102 of a light-emitting device 101, and all the transistors arranged in the pixel 102 are P-type transistors. However, the configuration of the pixel 102 of the light-emitting device 101 is not limited to this. For example, the polarities and conductivity types of each transistor and the like may all be reversed. Also, for example, the driving transistor may be a P-type transistor and the other transistors may be N-type transistors. The supplied potential and connections may be changed as appropriate according to the conductivity type and polarity of the light-emitting element and transistors included in the pixel 102 of the light-emitting device 101.

[0012] In the present embodiment, as shown in FIG. 1, the light-emitting device 101 includes a pixel array 103 and a driving circuit arranged around the pixel array 103. The pixel array 103 includes a plurality of pixels 102 arranged in an array. Each pixel 102 includes a light-emitting element 201. The light-emitting element 201 includes, for example, an anode and a cathode, and has an organic layer including a light-emitting layer between the anode and the cathode. The organic layer may appropriately have one or more of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer in addition to the light-emitting layer. In other words, the light-emitting element 201 may be an organic EL (Organic Electroluminescent) element.

[0013] The driving circuit is a circuit for driving the pixels 102 arranged in the pixel array 103. The driving circuit includes, for example, a vertical scanning circuit 104 and a signal output circuit 105. Also, in order to supply signals from the driving circuit to the pixels 102, scanning lines 106 extending along the row direction (the horizontal direction in FIG. 1) are arranged for each pixel row of the pixels 102 arranged in an array in the pixel array 103. Also, signal lines 107 extending along the column direction (the vertical direction in FIG. 1) are arranged for each pixel column of the pixels 102 arranged in an array in the pixel array 103.

[0014] Scan lines 106 are connected to the output terminals of the corresponding pixel rows of the vertical scanning circuit 104. Signal lines 107 are connected to the output terminals of the corresponding pixel columns of the signal output circuit 105.

[0015] The vertical scanning circuit 104 supplies a write control signal to the scan line 106 when writing a video signal to each pixel 102 of the pixel array 103.

[0016] The signal output circuit 105 appropriately selects either a luminance signal having a voltage corresponding to the luminance information when the light-emitting elements 201 of each pixel 102 are illuminated, or a reference voltage signal having a reference voltage, and outputs it to the signal line 107. The luminance signal represents the luminance of each pixel 102 in the image displayed by the light-emitting device 101, and can also be called the image signal.

[0017] The pixel 102 of this embodiment shown in Figure 2 includes a light-emitting element 201, a drive transistor 202 that supplies a current to the light-emitting element 201 according to a brightness signal, and a write transistor 203 that supplies a brightness signal to the gate electrode of the drive transistor. Here, the total number of transistors and the combination of conductivity types of the transistors are merely examples and are not limited to this configuration.

[0018] In this embodiment, one end of the current path including the light-emitting element 201 and the drive transistor 202 is connected to the power supply potential Vss, and the other end is connected to the power supply potential Vdd. More specifically, the cathode of the light-emitting element 201 is connected to the power supply potential Vss, and one of the diffusion regions (the source region in the configuration of Figure 2) that functions as the source region and drain region of the drive transistor 202 is connected to the power supply potential Vdd. However, this is not limited to this, and other elements may be placed between the power supply potential Vss and the light-emitting element 201, or between the power supply potential Vdd and the drive transistor 202. Also, other elements may be placed between the light-emitting element 201 and the drive transistor 202. In the configuration shown in Figure 2, the power supply potential Vdd is higher than the power supply potential Vss.

[0019] The other of the diffusion regions (the drain region in the configuration of Figure 2) that function as the source and drain regions of the drive transistor 202 is connected to the anode of the light-emitting element 201. The gate electrode of the drive transistor 202 is connected to the diffusion region (the drain region in the configuration of Figure 2) that functions as the source and drain regions of the write transistor 203.

[0020] The write transistor 203 is positioned between the signal line 107 and the gate electrode of the drive transistor 202. More specifically, one of the diffused regions of the write transistor 203, which functions as the source and drain regions, is connected to the gate electrode of the drive transistor 202 as described above, while the other of the diffused regions of the write transistor 203, which functions as the source and drain regions, is connected to the signal line 107. The gate electrode of the write transistor 203 is also connected to the scan line 106.

[0021] The drive transistor 202 supplies current from the power supply potential Vdd to the light-emitting element 201, causing the light-emitting element 201 to emit light. More specifically, the drive transistor 202 supplies a current to the light-emitting element 201 corresponding to the signal voltage of the signal line 107. In this way, the drive transistor 202 drives the light-emitting element 201 with current and causes it to emit light.

[0022] The writing transistor 203 becomes conductive in response to a write control signal applied to its gate electrode via the scan line 106 from the vertical scanning circuit 104. As a result, the writing transistor 203 samples the signal voltage or reference voltage of the luminance signal corresponding to the luminance information supplied from the signal output circuit 105 via the signal line 107 and writes it to the pixel 102. This written signal voltage or reference voltage is applied to the gate electrode of the driving transistor 202. In other words, the writing transistor 203 is positioned to transmit a luminance signal that causes the light-emitting element 201 to emit light at a luminance corresponding to the luminance information, and transmits the luminance signal to the gate electrode of the driving transistor 202.

[0023] An organic EL element may be used for the light-emitting element 201. When the light-emitting element 201 emits light, the amount of current flowing through the drive transistor 202 changes according to the signal voltage applied to the gate electrode of the drive transistor 202 via the writing transistor 203 from the signal line 107. This charges the capacitance between the anode and cathode of the light-emitting element 201 to a predetermined potential, and a current corresponding to this potential difference flows. As a result, the light-emitting element 201 emits light at a predetermined brightness.

[0024] Next, we will describe the details of the drive transistor 202 and the write transistor 203 included in the pixel 102 using Figures 3 and 4. Figure 3 is a plan view showing a schematic of the pixel 102, and Figure 4 is a cross-sectional view between Y1 and Y1' shown in Figure 3.

[0025] The drive transistor 202 includes two P-type diffusion regions 302 and 303, which function as source and drain regions, respectively, located in the current path containing the light-emitting element 201. The drive transistor 202 also includes a gate electrode 301. As described above, a brightness signal is transmitted to the gate electrode 301 from the write transistor 203.

[0026] In this embodiment, the conductivity type of the gate electrode 301 of the drive transistor 202, which is a P-type transistor, is N-type, and its conductivity type is opposite in polarity to that of the P-type diffusion regions 302 and 303. By using an N-type conductive gate electrode 301 relative to the P-type diffusion regions 302 and 303, the threshold voltage of the work function difference can be increased, making it possible to suppress the off-leak current in the drive transistor 202. By suppressing the off-leak current in the drive transistor 202, a deeper black display can be achieved, and high contrast can be obtained.

[0027] The write transistor 203 includes a gate electrode 304 and P-type diffusion regions 305 and 306, respectively, which function as source and drain regions. Diffusion region 306 is connected to the gate electrode 301 of the drive transistor 202. Diffusion region 305 is connected to the signal line 107, and gate electrode 304 is connected to the scan line 106.

[0028] In this embodiment, the conductivity type of the gate electrode 304 of the writing transistor 203, which is a P-type transistor, is N-type, and its conductivity type is opposite in polarity to that of the P-type diffusion regions 305 and 306. By using an N-type conductive gate electrode 304 with respect to the P-type diffusion regions 305 and 306, the threshold voltage of the work function difference can be increased, making it possible to suppress the off-leak current in the writing transistor 203. By suppressing the off-leak current in the writing transistor 203, it becomes possible to keep the signal voltage of the brightness signal written to the gate electrode 301 of the driving transistor 202 more constant during the light emission period. As a result, changes in the brightness of the light-emitting element 201 can be suppressed, and high-quality display can be achieved.

[0029] In this embodiment, the drive transistor 202 and the write transistor 203 are respectively arranged in an N-type well 403 provided on a P-type substrate 405. The well contact 307 applies the power supply potential Vdd to the N-type well 403. The element isolation section 404 can use any suitable structure, such as STI (Shallow Trench Isolation) isolation, LOCOS (Local Oxidation Of Silicon) isolation, or N-type diffusion layer isolation.

[0030] The inventors, while investigating the light-emitting device 101 with the above configuration, found the following problems. In the process of forming the channel region of the writing transistor 203, characteristic distributions of the channel concentration and threshold voltage of the writing transistor 203 are generated corresponding to the distribution of the amount of impurity ions implanted. As a result, the off-leak current of the writing transistor 203 is unstable, and the signal voltage of the gate electrode 301 of the driving transistor 202 changes for each pixel 102 during the light-emitting period, causing the amount of current supplied to the light-emitting element 201 to change and resulting in display unevenness.

[0031] To address this issue, the channel region 402 of the writing transistor 203 may be a P-type or N-type diffusion layer, but it is effective to keep the impurity concentration as low as possible. This suppresses variations in the channel concentration, threshold voltage, and off-leak current of the writing transistor 203, and suppresses the change in the signal voltage of the gate electrode 301 of the driving transistor 202 for each pixel 102 during the light emission period. This suppresses variations in the amount of current supplied to the light-emitting element 201. In other words, the closer the impurity concentration of the channel region 402 of the writing transistor 203 gets to "0", the more the variations in the amount of current supplied to the light-emitting element can be suppressed.

[0032] For example, the impurity concentration in the channel region 402 of the writing transistor 203 may be lower than the impurity concentration in the well 403. Also, for example, the impurity concentration in the channel region 402 of the writing transistor 203 may be approximately the same as the impurity concentration in the channel region 401 of the driving transistor 202. Similarly, for example, the impurity concentration in the channel region 402 of the writing transistor 203 may be approximately the same as the impurity concentration in the channel region of the transistors in the driving circuit (e.g., the vertical scanning circuit 104 or the signal output circuit 105) arranged around the pixel array 103. This eliminates the need to increase the number of steps required to form the channel regions of the writing transistor 203, the driving transistor 202, and the transistors in the driving circuit arranged around the pixel array 103. In this specification, impurity concentration may be a concentration based on the number of carriers determined by the difference in the number of holes to electrons in each region that functions as a P-type or N-type transistor.

[0033] Furthermore, as shown in Figure 4, the channel region 402 of the writing transistor 203 may be a P-type embedded channel. By making the channel region 402 a P-type embedded channel, current fluctuations caused by RTS (Random Telegraph Signal) noise of the writing transistor 203 can be suppressed. Even in this case, the impurity concentration of the channel region 402 of the writing transistor 203 may be lower than the impurity concentration of the well 403. Also, for example, the impurity concentration of the channel region 402 of the writing transistor 203 may be approximately the same as the impurity concentration of the channel region 401 of the driving transistor 202 and the impurity concentration of the channel regions of the transistors in the driving circuit arranged around the pixel array 103.

[0034] Similarly, as shown in Figure 4, the channel region 401 of the drive transistor 202 may be a P-type embedded channel. By making the channel region 401 a P-type embedded channel, current fluctuations caused by RTS (Random Telegraph Signal) noise of the drive transistor 202 can be suppressed.

[0035] As described above, by using an N-type gate electrode 304 in the P-type writing transistor 203, the off-leak current of the writing transistor 203 is suppressed. This makes it possible to keep the signal voltage of the brightness signal written to the gate electrode 301 of the driving transistor 202 more constant during the light emission period. As a result, changes in the brightness of the light-emitting element 201 are suppressed, enabling high-quality display in the light-emitting device 101.

[0036] Furthermore, by lowering the impurity concentration in the channel region 402 of the writing transistor 203, variations in the channel concentration, threshold voltage, and off-leak current of the writing transistor 203 are suppressed. As a result, the change in the signal voltage of the gate electrode 301 of the driving transistor 202 for each pixel 102 during the light emission period is suppressed, and display unevenness in the light-emitting device 101 can be suppressed. Consequently, it becomes possible to achieve high-quality display in the light-emitting device 101.

[0037] Next, with reference to Figures 5 to 8, a modified example of the light-emitting device 101 described above using Figures 1 to 4 will be explained. Figure 5 is a schematic diagram showing an example configuration of the light-emitting device 121 in this embodiment. Figure 6 is a circuit diagram showing an example configuration of the pixels 122 arranged in the light-emitting device 121.

[0038] In this embodiment, the pixels 122 of the light-emitting device 121, compared to the pixels 102 of the light-emitting device 101 described above, are arranged in a current path including the light-emitting element 201 and the drive transistor 202, and further include a light-emitting control transistor 221 that controls the illumination or de-illumination of the light-emitting element 201. In addition, the pixel array 103 of the light-emitting device 121 is provided with scan lines 123 for switching the conduction / de-conduction of the light-emitting control transistor 221, in addition to the configuration of the pixel array 103 of the light-emitting device 101. Furthermore, the pixels 122 further include capacitive elements 222 and 223. Other configurations of the light-emitting device 121 may be the same as those of the light-emitting device 101 described above. The following description will focus on the configurations of the light-emitting device 121 of this embodiment that differ from those of the light-emitting device 101 described above.

[0039] As shown in Figure 5, in the pixel array 103, scan lines 123 extending along the row direction are arranged for each pixel row of pixels 122 arranged in an array. The scan lines 123 are connected to the output terminals of the corresponding pixel rows of the vertical scanning circuit 104 and supply light emission control signals to each pixel 122.

[0040] As shown in Figure 6, the light-emitting control transistor 221 is positioned between the power supply potential Vdd for supplying drive current to the drive transistor 202 and the drive transistor 202. More specifically, one of the diffusion regions of the light-emitting control transistor 221, which functions as both the source and drain regions (the source region in the configuration of Figure 6), is connected to the power supply potential Vdd. The other of the diffusion regions of the light-emitting control transistor 221, which functions as both the source and drain regions (the drain region in the configuration of Figure 6), is connected to one of the diffusion regions of the drive transistor 202, which functions as both the source and drain regions (the source region in the configuration of Figure 6). The gate electrode of the light-emitting control transistor 221 is connected to the scan line 123. However, it is not limited to this configuration, and the light-emitting control transistor 221 may be positioned, for example, between the drive transistor 202 and the light-emitting element 201.

[0041] Capacitor element 222 is connected between the gate electrode of the drive transistor 202 and one of the diffusion regions that function as the source region and drain region of the drive transistor 202 (the source region in the configuration of Figure 6). Capacitor element 223 is connected between one of the diffusion regions that function as the source region and drain region of the drive transistor 202 (the source region in the configuration of Figure 6) and the power supply potential Vdd. Capacitor elements 222 and 223 may be parasitic capacitances of the drive transistor 202 and the light emission control transistor 221. Capacitor elements 222 and 223 may also be elements having a MIM (Metal-Insulator-Metal) structure.

[0042] The light emission control transistor 221 becomes conductive in response to the light emission control signal applied to its control terminal via the scan line 123 from the vertical scanning circuit 104, thereby allowing current to be supplied from the power supply potential Vdd to the drive transistor 202. This enables the drive transistor 202 to drive the light-emitting element 201. In other words, the light emission control transistor 221 functions as a switch element that controls the emission / non-emission of the light-emitting element 201 by controlling the conductivity of the current path through which the light-emitting element 201 is located.

[0043] The switching operation of the light emission control transistor 221 provides a period during which the light-emitting element 201 is in a non-emitting state (non-emitting period), allowing control of the ratio between the light-emitting period and the non-emitting period (so-called duty cycle control). This duty cycle control reduces afterimage blur caused by the light-emitting element 201 of each pixel 122 emitting light throughout one frame, particularly improving the quality of video. Furthermore, by arranging two capacitive elements 222 and 223, the signal voltage of the gate electrode 301 of the drive transistor 202 can be kept more constant, suppressing brightness changes and enabling high-quality display. This embodiment does not hinder the effects of suppressing the off-leak current of the writing transistor 203 and suppressing variations in the writing transistor 203 as described above, and high-quality display is maintained.

[0044] Next, the details of the light emission control transistor 221 will be explained using Figures 7 and 8. Figure 7 is a schematic plan view of the pixel 122, and Figure 8 is a cross-sectional view between Y2 and Y2' shown in Figure 7.

[0045] As shown in Figures 7 and 8, the light-emitting control transistor 221 consists of an N-type gate electrode 321 and two P-type diffusion regions 302 and 322, which function as source or drain regions, respectively, in the current path including the light-emitting element 201. In this embodiment, the diffusion region 302 is shared with the drive transistor 202. However, it is not limited to this, and the diffusion regions of the drive transistor 202 and the light-emitting control transistor 221 may be independent of each other. The gate electrode 304 is connected to the scan line 123 as described above.

[0046] In this embodiment, the length 323 in the direction of current flow of the diffusion region 306 connected to the gate electrode 301 of the drive transistor 202 of the writing transistor 203 is longer than the length 324 in the direction of current flow of the diffusion region 302 shared by the drive transistor 202 and the light emission control transistor 221. Here, the length 323 in the direction of current flow of the diffusion region 306 may be defined as the length from the end of the gate electrode 304 of the writing transistor 203 on the diffusion region 306 side to the point where the polarity of the diffusion region 306 and the well 403 changes in the direction of current flow (up and down in Figure 7), as shown in Figure 7, in the orthogonal projection of the substrate 405 on the surface where the writing transistor 203 is located. Furthermore, the length 323 of the diffusion region 306 in the direction of current flow may be defined as the length from the end of the gate electrode 304 of the writing transistor 203 on the diffusion region 306 side to the point where the impurity concentration of the diffusion region 306 becomes 1 / 2, 1 / 5, or 1 / 10 in the direction of current flow, in an orthogonal projection of the substrate 405 onto the surface on which the writing transistor 203 is located. Also, the length 324 of the diffusion region 302 in the direction of current flow may be defined as the length between the gate electrode 301 of the driving transistor 202 and the gate electrode 321 of the light emission control transistor 221 in the direction of current flow (up and down in Figure 7), in an orthogonal projection of the substrate 405 onto the surface on which the driving transistor 202 and the light emission control transistor 221 are located.

[0047] By making length 323 longer than length 324, the parasitic capacitance of the P-type diffusion region 306 increases, making it possible to keep the signal voltage written to the gate electrode 301 of the drive transistor 202 connected to the diffusion region 306 more constant. As a result, brightness changes can be suppressed, and a high-quality display can be achieved.

[0048] As shown in Figure 8, the impurity concentration of the channel region 421 of the light emission control transistor 221 may be approximately the same as the impurity concentration of the channel region 402 of the write transistor 203, the impurity concentration of the channel region 401 of the drive transistor 202, and the impurity concentration of the channel regions of transistors in the drive circuits (e.g., the vertical scanning circuit 104 and the signal output circuit 105) arranged around the pixel array 103. In other words, the impurity concentration of the light emission control transistor 221 may be lower than the impurity concentration of the well 403, along with the impurity concentrations of the channel region 402 of the write transistor 203 and the channel region 401 of the drive transistor 202. Also, as shown in Figure 8, the channel region 401 of the drive transistor 202 may be a P-type embedded channel, similar to the channel region 402 of the write transistor 203 and the channel region 401 of the drive transistor 202. This eliminates the need to increase the number of steps required to form the channel regions of the light emission control transistor 221, the writing transistor 203, the driving transistor 202, and the transistors in the driving circuit of the pixel array 103. Furthermore, by making the configuration of the light emission control transistor 221 the same as that of the writing transistor 203, fluctuations in current caused by off-leak current and RTS noise of the light emission control transistor 221 can be suppressed.

[0049] Next, with reference to Figures 9 to 12, modified examples of the light-emitting devices 101 and 121 described above will be explained. Figure 9 is a schematic diagram showing an example configuration of the light-emitting device 141 in this embodiment. Figure 10 is a circuit diagram showing an example configuration of the pixels 142 arranged in the light-emitting device 141.

[0050] In this embodiment, the pixels 142 of the light-emitting device 141 further include a reset transistor 241 for short-circuiting the two terminals of the light-emitting element 201, in other words, for connecting the anode of the light-emitting element 201 to the power supply potential Vss, compared to the pixels 122 of the light-emitting device 121 described above. In addition, the pixel array 103 of the light-emitting device 141 is provided with a scan line 143 for switching the conduction / non-conductivity of the reset transistor 241, in addition to the configuration of the pixel array 103 of the light-emitting device 121. Other configurations may be the same as those of the light-emitting device 121 described above. The following description will focus on the configurations of the light-emitting device 141 of this embodiment that differ from those of the light-emitting device 121 described above.

[0051] As shown in Figure 9, in the pixel array 103, scan lines 143 extending along the row direction are arranged for each pixel row of pixels 142 arranged in an array. The scan lines 143 are connected to the output terminals of the corresponding pixel rows of the vertical scanning circuit 104 and supply a reset signal to each pixel 142.

[0052] As shown in Figure 10, one of the diffusion regions that functions as the source and drain regions of the reset transistor 241 (the source region in the configuration of Figure 10) is connected to the anode of the light-emitting element 201 and the other of the diffusion region that functions as the source and drain regions of the drive transistor 202 (the drain region in the configuration of Figure 10). The other of the diffusion region that functions as the source and drain regions of the reset transistor 241 (the drain region in the configuration of Figure 10) is connected to the power supply potential Vss. The gate electrode of the reset transistor 241 is connected to scan line 143.

[0053] During the non-emitting period of pixel 142, the reset transistor 241 is made conductive, connecting the anode of the light-emitting element 201 to the power supply potential Vss and short-circuiting the two terminals of the light-emitting element 201. This allows the light-emitting element 201 to be put into a non-emitting state (reset operation). By providing the reset transistor 241 in pixel 142, the light-emitting element 201 can be reliably displayed in black during the non-emitting period, and a light-emitting device 141 with a high contrast ratio can be realized. It should be noted that this embodiment does not hinder the effects of suppressing the off-leak current of the writing transistor 203 and suppressing variations in the writing transistor 203 as described above, and high-quality display is maintained.

[0054] Next, the reset transistor 241 will be described in detail using Figures 11 and 12. Figure 11 is a schematic plan view of pixel 142, and Figure 12 is a cross-sectional view between Y3 and Y3' shown in Figure 11.

[0055] As shown in Figures 11 and 12, the reset transistor 241 consists of a P-type gate electrode 341, a P-type diffusion region 303 and a diffusion region 342 that function as either a source region or a drain region, respectively. In this embodiment, the diffusion region 303 is shared with the drive transistor 202. However, it is not limited to this, and the diffusion regions of the drive transistor 202 and the reset transistor 241 may be independent of each other. The gate electrode 304 is connected to the scan line 143 as described above.

[0056] As shown in Figure 12, the impurity concentration of the channel region 441 of the reset transistor 241 may be approximately the same as the impurity concentration of the channel region 402 of the write transistor 203, the impurity concentration of the channel region 401 of the drive transistor 202, the impurity concentration of the channel region 421 of the light emission control transistor 221, and the impurity concentration of the channel regions of transistors in the drive circuits (e.g., the vertical scanning circuit 104 and the signal output circuit 105) arranged around the pixel array 103. In other words, the impurity concentration of the reset transistor 241 may be lower than the impurity concentration of the well 403, along with the impurity concentrations of the channel region 402 of the write transistor 203, the channel region 401 of the drive transistor 202, the channel region 421 of the light emission control transistor 221, etc. Also, as shown in Figure 12, the channel region 401 of the drive transistor 202 may be a P-type embedded channel, similar to the channel region 402 of the write transistor 203 and the channel region 401 of the drive transistor 202. This eliminates the need to increase the number of steps required to form the channel regions of the reset transistor 241, the write transistor 203, the drive transistor 202, the light emission control transistor 221, and the transistors in the drive circuit located around the pixel array 103. Furthermore, by making the configuration of the reset transistor 241 the same as that of the write transistor 203, fluctuations in current caused by the off-leak current of the reset transistor 241 and RTS noise can be suppressed.

[0057] As shown in Figure 12, the conductivity type of the gate electrode 341 of the reset transistor 241 may be P-type, unlike the gate electrode 304 of the write transistor 203. This reduces the threshold voltage of the reset transistor 241 and prevents the anode of the light-emitting element 201 from becoming higher than the power supply potential Vss during reset operation. By including the reset transistor 241 in the pixel 142, the transition of the light-emitting element 201 to the non-emitting state becomes more reliable, and a higher contrast, higher quality display can be achieved in the light-emitting device 141.

[0058] In the above description, an organic EL element was given as the light-emitting element 201, but it is not limited to this. The light-emitting element 201 can be applied to all light-emitting devices that use current-driven electro-optic elements (light-emitting elements) in which the luminescence changes according to the current value flowing through the element, such as inorganic EL elements, LED elements, and semiconductor laser elements.

[0059] Here, examples of applications of the light-emitting devices 101, 121, and 141 of this embodiment applied to display devices, photoelectric converters, electronic devices, lighting devices, mobile devices, and wearable devices will be explained using Figures 13 to 19(a) and 19(b).

[0060] Figure 13 is a schematic diagram showing an example of a display device using the light-emitting devices 101, 121, and 141 of this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between the upper cover 1001 and the lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Active elements such as transistors are arranged on the circuit board 1007. The battery 1008 does not need to be provided if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be provided in this position. The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the display panel 1005. The pixel array 103 of the light-emitting devices 101, 121, and 141, which function as a display panel 1005, is connected to and operates with active elements such as transistors arranged on the circuit board 1007.

[0061] The display device 1000 shown in Figure 13 may be used as the display unit of a photoelectric conversion device (imaging device) having an optical unit with multiple lenses and an image sensor that receives light passing through the optical unit and converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the image sensor. Furthermore, the display unit may be an external display unit exposed to the outside of the photoelectric conversion device, or a display unit located inside the viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0062] Figure 14 is a schematic diagram showing an example of a photoelectric converter using the light-emitting devices 101, 121, and 141 of this embodiment. The photoelectric converter 1100 may have a viewfinder 1101, a rear display 1102, an operating unit 1103, and a housing 1104. The photoelectric converter 1100 may also be called an imaging device. The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the display unit, which is the viewfinder 1101 and the rear display 1102. In this case, the light-emitting devices 101, 121, and 141 may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, and the possibility that the subject may be obscured by an obstacle.

[0063] Since the optimal timing for imaging is often very short, it is desirable to display information as quickly as possible. Therefore, light-emitting devices 101, 121, and 141 that include organic light-emitting materials such as organic EL elements in their light-emitting layer may be used in the viewfinder 1101 and the rear display 1102. This is because organic light-emitting materials have a fast response speed. Light-emitting devices 101, 121, and 141 using organic light-emitting materials are more suitable than liquid crystal displays for these devices where display speed is required.

[0064] The photoelectric converter 1100 has an optical section (not shown). The optical section has multiple lenses, and the light that passes through the optical section is imaged onto a photoelectric converter element (not shown) housed in a light-receiving housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically.

[0065] The light-emitting devices 101, 121, and 141 may be applied to the display section of an electronic device. In that case, they may have both a display function and an operating function. Examples of portable terminals include mobile phones such as smartphones, tablets, and head-mounted displays.

[0066] Figure 15 is a schematic diagram showing an example of an electronic device using the light-emitting devices 101, 121, and 141 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit 1202 may also be a biometric recognition unit that recognizes fingerprints to unlock, etc. A portable device having a communication unit can also be called a communication device. The light-emitting device 101 of this embodiment can be applied to the display unit 1201.

[0067] Figures 16(a) and 16(b) are schematic diagrams showing an example of a display device using the light-emitting devices 101, 121, and 141 of this embodiment. Figure 12(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the display unit 1302. The display device 1300 may also have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in Figure 16(a). For example, the lower edge of the frame 1301 may also serve as the base 1303. Also, the frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0068] Figure 16(b) is a schematic diagram showing another example of a display device using the light-emitting devices 101, 121, and 141 of this embodiment. The display device 1310 in Figure 16(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated by a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or they may display a single image together.

[0069] Figure 17 is a schematic diagram showing an example of a lighting device using the light-emitting devices 101, 121, and 141 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse the light from the light source, such as for lighting up, and deliver light over a wide area. A cover may be provided on the outermost part if necessary. The lighting device 1400 may have both the optical film 1404 and the light diffusion unit 1405, or it may have only one of them.

[0070] The lighting device 1400 is, for example, a device for illuminating a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit for adjusting the brightness of these colors. The lighting device 1400 may have a power supply circuit connected to the light-emitting devices 101, 121, and 141, which function as light sources 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. White light has a color temperature of 4200K, and daylight white light has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat, liquid silicon, etc.

[0071] Figure 18 is a schematic diagram of an automobile having a taillight, which is an example of a vehicle light fixture using the light-emitting devices 101, 121, and 141 of this embodiment. The automobile 1500 may have a taillight 1501, which may be illuminated when the brakes are applied or otherwise. The light-emitting devices 101, 121, and 141 of this embodiment may also be used as headlights for vehicles. The automobile is an example of a mobile body, which may be a ship, drone, aircraft, railway vehicle, industrial robot, etc. The mobile body may have a body and a light fixture installed thereon. The light fixture may indicate the current position of the body.

[0072] The light-emitting devices 101, 121, and 141 of this embodiment can be applied to the tail lamp 1501. The tail lamp 1501 may have a protective member to protect the light-emitting devices 101, 121, and 141 that function as the tail lamp 1501. The protective member can be made of any material as long as it has a reasonably high strength and is transparent, but it may be made of polycarbonate or the like. The protective member may also be made of polycarbonate mixed with a frangic acid derivative, an acrylonitrile derivative, or the like.

[0073] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows may be for checking the front and rear of the automobile, or they may be transparent displays. The light-emitting devices 101, 121, and 141 of this embodiment may be used for such transparent displays. In this case, the constituent materials such as electrodes of the light-emitting devices 101, 121, and 141 are made of transparent materials.

[0074] Further application examples of the light-emitting devices 101, 121, and 141 of this embodiment will be described with reference to Figures 19(a) and 19(b). The light-emitting devices 101, 121, and 141 can be applied to systems that can be worn as wearable devices such as smart glasses, head-mounted displays (HMDs), and smart contact lenses. The imaging display device used in such application examples comprises an imaging device capable of photoelectric conversion of visible light and a light-emitting device capable of emitting visible light.

[0075] Figure 19(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface of the lens 1601 of the glasses 1600. In addition, the light-emitting devices 101, 121, and 141 of this embodiment are provided on the back surface of the lens 1601.

[0076] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the light-emitting devices 101, 121, and 141 according to each embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the light-emitting devices 101, 121, and 141. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0077] Figure 19(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, which is equipped with an imaging device equivalent to the imaging device 1602 and light-emitting devices 101, 121, and 141. The lens 1611 has an optical system formed therein for projecting light from the imaging device in the control device 1612 and the light-emitting devices 101, 121, and 141, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and light-emitting devices 101, 121, and 141, and also controls the operation of the imaging device and light-emitting devices 101, 121, and 141. The control device 1612 may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light-emitting unit emits infrared light towards the eyeball of the user who is fixating on the displayed image. An image of the eye is obtained by detecting the reflected infrared light from the eyeball using an imaging unit equipped with a light-receiving element. Image quality degradation is reduced by having a reduction means that reduces the amount of light transmitted from the infrared light-emitting unit to the display unit in a planar view.

[0078] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0079] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0080] A light-emitting device 101, 121, 141 according to one embodiment of the present invention has an imaging device having a light-receiving element, and may control the displayed image based on the user's line of sight information from the imaging device.

[0081] Specifically, the light-emitting devices 101, 121, and 141 determine a first field of view area that the user is fixated on, and a second field of view area other than the first field of view area, based on gaze information. The first and second field of view areas may be determined by the control devices of the light-emitting devices 101, 121, and 141, or they may be determined by an external control device and received. In the display area of ​​the light-emitting devices 101, 121, and 141, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0082] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, the area with higher priority is determined from the first display area and the second display area. The first display area and the second display area may be determined by the control devices of the light-emitting devices 101, 121, and 141, or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of areas with relatively lower priority may be lowered.

[0083] AI may be used to determine the first field of view area and high-priority areas. The AI ​​may be a model configured to estimate the angle of line of sight and the distance to the target object at the end of the line of sight from the image of the eye, using the image of the eye and the direction the eye was actually looking in that image as training data. The AI ​​program may be installed in the light-emitting devices 101, 121, and 141, in the imaging device, or in an external device. If installed in an external device, it is transmitted to the light-emitting devices 101, 121, and 141 via communication.

[0084] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0085] The disclosures herein include the following light-emitting devices, display devices, photoelectric converters, electronic devices, lighting devices, and mobile devices.

[0086] (Item 1) A light-emitting device having pixels, each including a light-emitting element, a first transistor that supplies a current to the light-emitting element according to a brightness signal, and a second transistor that supplies the brightness signal to the gate electrode of the first transistor, The diffusion region, which functions as the source region and drain region of the second transistor, is of the first conductivity type. A light-emitting device characterized in that the gate electrode of the second transistor has a second conductivity type opposite to that of the first conductivity type.

[0087] (Item 2) The first transistor and the second transistor are arranged in the second conductivity type well, The light-emitting device according to item 1, characterized in that the impurity concentration in the channel region of the second transistor is lower than the impurity concentration in the well.

[0088] (Item 3) The light-emitting device according to item 2, characterized in that the impurity concentration in the channel region of the first transistor is the same as the impurity concentration in the channel region of the second transistor.

[0089] (Item 4) The light-emitting device according to item 2 or 3, characterized in that the channel region of the second transistor is of the first conductivity type.

[0090] (Item 5) The light-emitting device according to item 3, characterized in that the channel region of the first transistor and the channel region of the second transistor are of the first conductivity type.

[0091] (Item 6) The diffusion region that functions as the source region and drain region of the first transistor is of the first conductivity type, The light-emitting device according to item 5, characterized in that the gate electrode of the first transistor is of the second conductivity type.

[0092] (Item 7) The light-emitting device includes a pixel array in which a plurality of pixels are arranged, and a peripheral region in which a drive circuit for operating the plurality of pixels is arranged. A third transistor with a channel region of the first conductivity type is arranged in the aforementioned peripheral region. A light-emitting device according to any one of items 4 to 6, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the third transistor are the same.

[0093] (Item 8) The light-emitting device according to any one of items 1 to 7, characterized in that the pixel is arranged in a current path including the light-emitting element and the first transistor, and further includes a fourth transistor that controls the light emission or non-emission of the light-emitting element.

[0094] (Item 9) The source region and drain region of the first transistor and the other source region and drain region of the fourth transistor share one diffusion region. The light-emitting device according to item 8, characterized in that the length of the current-flowing direction of the diffusion region connected to the gate electrode of the first transistor of the second transistor is longer than the length of the current-flowing direction of the diffusion region shared by the first transistor and the fourth transistor.

[0095] (Item 10) The pixel is arranged in a current path including the light-emitting element and the first transistor, and further includes a fourth transistor for controlling the light emission or non-emission of the light-emitting element. The light-emitting device according to any one of items 2 to 7, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the fourth transistor are the same.

[0096] (Item 11) The light-emitting device according to item 10, characterized in that the channel region of the second transistor and the channel region of the fourth transistor are of the first conductivity type.

[0097] (Item 12) The diffusion region that functions as the source region and drain region of the fourth transistor is of the first conductivity type, The light-emitting device according to item 11, characterized in that the gate electrode of the fourth transistor is of the second conductivity type.

[0098] (Item 13) The pixel further includes a fifth transistor that short-circuits the two terminals of the light-emitting element, A light-emitting device according to any one of items 2 to 12, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the fifth transistor are the same.

[0099] (Item 14) The light-emitting device according to item 13, characterized in that the channel region of the second transistor and the channel region of the fifth transistor are of the first conductivity type.

[0100] (Item 15) The diffusion region that functions as the source region and drain region of the fifth transistor is of the first conductivity type, The light-emitting device according to item 14, characterized in that the gate electrode of the fifth transistor is of the first conductivity type.

[0101] (Item 16) A display device characterized by comprising a light-emitting device described in any one of items 1 to 15, and an active element connected to the light-emitting device.

[0102] (Item 17) It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric converter is characterized in that the display unit is a display unit that displays an image captured by the image sensor, and has a light-emitting device described in any one of items 1 to 15.

[0103] (Item 18) It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having a light-emitting device described in any one of items 1 to 15.

[0104] (Item 19) A lighting device comprising a light source and at least one of a light diffusing section and an optical film, The aforementioned light source is characterized by having a light-emitting device described in any one of items 1 to 15.

[0105] (Item 20) A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned luminaire is a mobile body characterized by having a light-emitting device described in any one of items 1 to 15.

[0106] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0107] 101,121,141: Light-emitting device, 102,122,142: Pixel, 201: Light-emitting element, 301,304,321,341: Gate electrode, 302,303,305,306,322,342: Diffusion region

Claims

1. A light-emitting device having pixels, each including a light-emitting element, a first transistor that supplies a current to the light-emitting element according to a brightness signal, and a second transistor that supplies the brightness signal to the gate electrode of the first transistor, The diffusion region that functions as the source region and drain region of the second transistor is of the first conductivity type, The gate electrode of the second transistor has a second conductivity type opposite to that of the first conductivity type. The first transistor and the second transistor are arranged in the second conductivity type well, A light-emitting device characterized in that the impurity concentration in the channel region of the second transistor is lower than the impurity concentration in the well.

2. The light-emitting device according to claim 1, characterized in that the impurity concentration in the channel region of the first transistor and the impurity concentration in the channel region of the second transistor are the same.

3. The light-emitting device according to claim 1, characterized in that the channel region of the second transistor is of the first conductivity type.

4. The light-emitting device according to claim 2, characterized in that the channel region of the first transistor and the channel region of the second transistor are of the first conductivity type.

5. The diffusion region that functions as the source region and drain region of the first transistor is of the first conductivity type, The light-emitting device according to claim 4, characterized in that the gate electrode of the first transistor is of the second conductivity type.

6. The light-emitting device includes a pixel array in which a plurality of pixels are arranged, and a peripheral region in which a drive circuit for operating the plurality of pixels is arranged. A third transistor, whose channel region is of the first conductivity type, is arranged in the aforementioned peripheral region. The light-emitting device according to claim 3, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the third transistor are the same.

7. The light-emitting device according to claim 1, further comprising a fourth transistor which is arranged in a current path including the light-emitting element and the first transistor and controls the light emission or non-emission of the light-emitting element.

8. The source region and drain region of the first transistor and the other source region and drain region of the fourth transistor share one diffusion region. The light-emitting device according to claim 7, characterized in that the length of the current-flowing direction of the diffusion region connected to the gate electrode of the first transistor of the second transistor is longer than the length of the current-flowing direction of the diffusion region shared by the first transistor and the fourth transistor.

9. The pixel is arranged in a current path including the light-emitting element and the first transistor, and further includes a fourth transistor for controlling the light emission or non-emission of the light-emitting element. The light-emitting device according to claim 1, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the fourth transistor are the same.

10. The light-emitting device according to claim 9, characterized in that the channel region of the second transistor and the channel region of the fourth transistor are of the first conductivity type.

11. The diffusion region that functions as the source region and drain region of the fourth transistor is of the first conductivity type, The light-emitting device according to claim 10, characterized in that the gate electrode of the fourth transistor is of the second conductivity type.

12. The pixel further includes a fifth transistor that short-circuits the two terminals of the light-emitting element, The light-emitting device according to claim 1, characterized in that the gate electrode of the fifth transistor is of the first conductivity type.

13. The pixel further includes a fifth transistor that short-circuits the two terminals of the light-emitting element, The light-emitting device according to claim 1, characterized in that the impurity concentration in the channel region of the second transistor and the impurity concentration in the channel region of the fifth transistor are the same.

14. The light-emitting device according to claim 13, characterized in that the channel region of the second transistor and the channel region of the fifth transistor are of the first conductivity type.

15. The diffusion region that functions as the source region and drain region of the fifth transistor is of the first conductivity type, The light-emitting device according to claim 14, characterized in that the gate electrode of the fifth transistor is of the first conductivity type.

16. A light-emitting device having pixels, each including a light-emitting element, a first transistor that supplies a current to the light-emitting element according to a brightness signal, and a second transistor that supplies the brightness signal to the gate electrode of the first transistor, The diffusion region that functions as the source region and drain region of the second transistor is of the first conductivity type, The gate electrode of the second transistor has a second conductivity type opposite to that of the first conductivity type. The pixel is arranged in a current path including the light-emitting element and the first transistor, and further includes a fourth transistor that controls the light emission or non-emission of the light-emitting element. The source region and drain region of the first transistor and the other source region and drain region of the fourth transistor share one diffusion region. A light-emitting device characterized in that the length of the current-flowing direction of the diffusion region connected to the gate electrode of the first transistor of the second transistor is longer than the length of the current-flowing direction of the diffusion region shared by the first transistor and the fourth transistor.

17. A display device comprising a light-emitting device according to any one of claims 1 to 16, and an active element connected to the light-emitting device.

18. It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric converter is characterized in that the display unit is a display unit that displays an image captured by the image sensor, and has a light-emitting device according to any one of claims 1 to 16.

19. It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having a light-emitting device according to any one of claims 1 to 16.

20. A lighting device comprising a light source and at least one of a light diffusing section and an optical film, The lighting device is characterized in that the light source has a light-emitting device according to any one of claims 1 to 16.

21. A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned light fixture is a mobile body characterized by having a light-emitting device according to any one of claims 1 to 16.

Images