Vaporizer, semiconductor manufacturing system, and method for vaporizing solid raw materials

Abstract

To prevent formation efficiency of a layer formed using thermal decomposition of a solid material from reducing from the middle.SOLUTION: A vaporizer includes: an evaporation amount control plate covering a surface of a solid material; and a discharge flow passage for discharging carrier gas flowing so as to face the evaporation amount control plate. The evaporation amount control plate has a plurality of through holes; an opening ratio per a unit area in the evaporation amount control plate changes along a flow direction of the carrier gas; and the carrier gas carries a predetermined raw material evaporating from the solid material to pass through the plurality of through holes.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure relates to a vaporizer, a semiconductor manufacturing system, and a method for vaporizing a solid raw material.

Background Art

[0002] In a multilayer structure of a semiconductor device, a low dielectric constant interlayer insulating film (Low-k insulating film) and a conductive film made of, for example, copper (Cu) may be laminated. At this time, in order to prevent Cu from diffusing into the Low-k insulating film, a barrier layer is provided between the Low-k insulating film and the conductive film. Conventionally, tantalum (Ta) has been used as the material for forming the barrier layer, but in recent years, ruthenium (Ru) has been used because of its good adhesion to Cu.

[0003] A barrier layer made of Ru is formed, for example, in a thermochemical vapor deposition method (TCVD) by thermally decomposing a solid raw material containing Ru, for example, dodecacarbonyltriruthenium (DCR), and depositing Ru in the thermally decomposed DCR on a wafer. A multi-tray type vaporizer is used for this thermal decomposition of DCR.

[0004] The multi-tray type vaporizer includes a cylindrical main body, a plurality of trays which are ring-shaped containers housed inside the main body and stacked in the central axis direction, and a discharge flow path formed along the central axis. Each tray is filled with DCR as a solid raw material. When thermally decomposing DCR, each tray is heated and a carrier gas flows from the outer peripheral side of the main body toward the discharge flow path side at the center. When the carrier gas flows above the DCR filled in each tray, it entrains the vaporized DCR and flows into a processing container that houses a wafer through the discharge flow path (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] The technology disclosed herein suppresses the decrease in the formation efficiency of layers formed using the thermal decomposition of solid raw materials from the middle of the process. [Means for solving the problem]

[0007] One aspect of the technology relating to this disclosure is a vaporizer comprising a vaporization rate adjustment plate covering the surface of a solid raw material and a discharge channel for discharging a carrier gas flowing facing the vaporization rate adjustment plate, wherein the vaporization rate adjustment plate has a plurality of through holes, the opening ratio per unit area of ​​the vaporization rate adjustment plate changes along the flow direction of the carrier gas, and the carrier gas transports a predetermined raw material that has vaporized from the solid raw material and passed through the plurality of through holes. [Effects of the Invention]

[0008] According to the technology disclosed herein, it is possible to suppress the decrease in the formation efficiency of layers formed using the thermal decomposition of solid raw materials from the middle of the process. [Brief explanation of the drawing]

[0009] [Figure 1] This figure schematically shows the configuration of a semiconductor manufacturing system as one embodiment of the technology relating to this disclosure. [Figure 2] This diagram illustrates the configuration of the vaporizer shown in Figure 1. [Figure 3] This figure shows the residual form of DCR in each tray of a conventional vaporizer. [Figure 4] This diagram explains why vaporization proceeds from the DCR on the outer wall side of each tray in conventional vaporization devices. [Figure 5] This diagram compares a graph showing the calculated changes in the DCR concentration of a conventional carrier gas with a cross-section of the tray. [Figure 6]This is a perspective view showing the configuration of vaporization rate adjustment plates used in each tray of a vaporizer as one embodiment of the technology relating to this disclosure. [Figure 7] This diagram compares a graph showing the calculated change in the carrier gas DCR concentration when using a vaporization rate adjustment plate with a cross-section of the tray. [Figure 8] This is a process diagram showing the descent of the vaporization rate adjustment plate as the vaporization of DCR progresses. [Figure 9] This is a perspective view showing a first modified example of the vaporization rate adjustment plate. [Figure 10] This is a plan view showing the configuration of a second modified example of the vaporization rate adjustment plate. [Modes for carrying out the invention]

[0010] Incidentally, in the multi-tray vaporizer described in Patent Document 1, during the thermal decomposition of DCR, the DCR in each tray decreases from the outer periphery of the main body, and during the formation of the Ru barrier layer, the DCR on the outer periphery of each tray tends to vaporize completely, exposing the bottom. In this case, the DCR in each tray remains biased toward the discharge channel side, and as a result, the surface area of ​​DCR exposed to the carrier gas decreases. Therefore, the vaporized DCR that is entrained by the carrier gas decreases, and the partial pressure of DCR in the carrier gas decreases, causing the efficiency of barrier layer formation to decline from a certain point.

[0011] In response to this, the technology disclosed herein reduces the DCR substantially uniformly in each tray from the outer periphery to the discharge channel side, suppressing the occurrence of DCR unevenness and maintaining the surface area of ​​DCR exposed to the carrier gas. This prevents a decrease in the partial pressure of DCR in the carrier gas and suppresses a decrease in the efficiency of barrier layer formation midway through the process.

[0012] Hereinafter, an embodiment of the technology relating to this disclosure will be described with reference to the drawings. Figure 1 is a schematic diagram showing the configuration of a semiconductor manufacturing system as an embodiment of the technology relating to this disclosure. In Figure 1, the film deposition apparatus is depicted as a cross-sectional view for ease of understanding.

[0013] In FIG. 1, the semiconductor manufacturing system 10 includes a vaporizer 11, a film forming apparatus 12, a carrier gas supply apparatus 13, an exhaust apparatus 14, a temperature control unit 15, and a control unit 16. The vaporizer 11 is connected to the film forming apparatus 12 via a gas supply path 17 and supplies a carrier gas containing a predetermined raw material to the film forming apparatus 12. The film forming apparatus 12 deposits a predetermined raw material on a wafer W (substrate) to form a predetermined thin film. The detailed configuration of the vaporizer 11 will be described later.

[0014] The film forming apparatus 12 includes a processing container 18 that houses the wafer W, a mounting table 19 disposed at the bottom of the processing container 18, and a vaporization raw material diffusion plate 21 having a plurality of through holes 20. The mounting table 19 mounts the wafer W. The vaporization raw material diffusion plate 21 partitions the inside of the processing container 18 into a processing chamber 22 where the mounting table 19 is present and a diffusion chamber 23. A gas supply path 17 is connected to the diffusion chamber 23, and a carrier gas is introduced from the vaporizer 11.

[0015] The introduced carrier gas diffuses in the diffusion chamber 23, passes through each through hole 20 of the vaporization raw material diffusion plate 21, and enters the processing chamber 22. A predetermined raw material contained in the carrier gas that has entered the processing chamber 22 is adsorbed on the surface of the wafer W on the mounting table 19. The mounting table 19 incorporates a temperature control device (not shown), and the temperature control device adjusts the temperature of the mounted wafer W. Specifically, the temperature control device raises the temperature of the wafer W to thermally decompose a predetermined raw material adsorbed on the surface. At this time, a thin film mainly composed of a predetermined raw material, for example, a barrier layer, is formed on the surface of the wafer W.

[0016] The carrier gas supply apparatus 13 supplies, as the carrier gas, for example, carbon monoxide (CO) gas to the vaporizer 11. The exhaust apparatus 14 is composed of, for example, a turbo molecular pump, and decompresses the inside of the processing container 18 to a pressure suitable for the film forming process of the barrier layer. The temperature control unit 15 heats the vaporizer 11 as a whole to promote the vaporization of a predetermined raw material. The control unit 16 controls the operations of the vaporizer 11, the film forming apparatus 12, the carrier gas supply apparatus 13, the exhaust apparatus 14, and the temperature control unit 15 to execute the film forming process.

[0017] FIG. 2 is a diagram for explaining the configuration of the vaporizer 11. FIG. 2(A) is a cross-sectional view of the vaporizer 11, and FIG. 2(B) is a perspective view showing the vaporizer 11 with a part cut away.

[0018] In FIG. 2, the vaporizer 11 includes a cylindrical main body 24, an upper lid 28, and a lower lid 29. Further, the vaporizer 11 further includes a plurality of trays 26 which are ring-shaped containers filled with a solid raw material containing Ru as a predetermined raw material, for example, DCR25. Note that the solid raw material filled in each tray 26 is not limited to DCR, and any precursor of the main component of the thin film formed by the film formation process may be used.

[0019] Each tray 26 is housed inside the main body 24, and the trays 26 are stacked in the direction of the central axis C of the main body 24 such that their respective central axes coincide with the central axis C of the main body 24. Also, the central openings 26c of each tray 26 overlap in a top view, forming a discharge flow path 30 that penetrates the inside of the main body 24 from below to above. Since the openings 26c of each tray 26 are located on the central axis C of the main body 24, the discharge flow path 30 is formed along the central axis C. As a result, each tray 26 is arranged so as to surround the discharge flow path 30. Also, the upper lid 28 closes the upper opening of the main body 24, and the lower lid 29 closes the lower opening of the main body 24.

[0020] A heater (not shown) (heating means) is built into the side wall 24a of the main body 24, the upper lid 28, and the lower lid 29, and the control unit 16 controls each heater to heat the DCR25 filled in each tray 26 to promote vaporization.

[0021] Also, a carrier gas flow path 31 is formed inside the upper lid 28, the side wall 24a of the main body 24, and the lower lid 29, and the carrier gas flow path 31 is connected to the carrier gas supply device 13 via a pipe (not shown). The carrier gas supplied from the carrier gas supply device 13 passes through the carrier gas flow path 31 and is introduced into the inside of the main body 24.

[0022] The outer diameter of each tray 26 is set to be smaller than the inner diameter of the main body 24. As a result, a ring-shaped space 32 is formed between the side wall 24a of the main body 24 and the outer wall 26a of each tray 26. In addition, multiple inlets 26b are opened in the outer wall 26a of each tray 26.

[0023] The carrier gas introduced into the main body 24 flows through the ring-shaped space 32, passes through each inlet 26b of each tray 26, and flows towards the discharge channel 30. In other words, the carrier gas is introduced from the side of the main body 24 towards the discharge channel 30 inside the main body 24.

[0024] As the carrier gas flows from each inlet 26b toward the discharge channel 30, it flows over the DCR 25 filled in the tray 26. At this time, the carrier gas entrains the vaporized DCR. When the carrier gas, entrained with vaporized DCR, reaches the discharge channel 30, it flows upward along the discharge channel 30 and is discharged from the vaporizer 11 through the outlet 33 and flows into the gas supply path 17. In Figure 2(A), the flow of the carrier gas is indicated by arrows.

[0025] Incidentally, in a conventional vaporizer having the same configuration as the vaporizer 11 except for the vaporization rate adjustment plate 35 described later, it was observed that the efficiency of forming the barrier layer formed by the film deposition process tended to decrease partway through.

[0026] Therefore, the inventors confirmed the remaining form of DCR25 in each tray 26 after the barrier layer formation efficiency had decreased, and confirmed that the DCR25 remained biased toward the discharge channel 30 side, as shown in Figure 3. In Figure 3, Figure 3(A) shows the remaining form of DCR25 in the top tray 26, Figure 3(B) shows the remaining form of DCR25 in the second tray 26 from the top, Figure 3(C) shows the remaining form of DCR25 in the third tray 26 from the top, Figure 3(D) shows the remaining form of DCR25 in the fourth tray 26 from the top, and Figure 3(E) shows the remaining form of DCR25 in the bottom tray 26.

[0027] From the residual morphology of DCR25 shown in Figure 3, it was found that during the film deposition process, for example, in each tray 26, vaporization progressed from the DCR25 on the outer wall 26a side, and all of the DCR25 on the outer wall 26a side vaporized during the film deposition process. In other words, it was found that the bottom of the outer wall 26a side of each tray 26 was exposed before the bottom of the discharge channel 30 side.

[0028] As a result, from the middle of the film deposition process, the surface area of ​​DCR 25 exposed to the carrier gas decreases in each tray 26, the amount of vaporized DCR entrained by the carrier gas decreases, and the partial pressure of DCR in the carrier gas decreases. Consequently, it was inferred that the amount of DCR adsorbed on the wafer W in the film deposition apparatus 12 decreased, reducing the efficiency of barrier layer formation.

[0029] Therefore, in order to suppress the decrease in the efficiency of barrier layer formation during the film deposition process, it is necessary to suppress vaporization from the DCR 25 on the outer wall 26a side in each tray 26.

[0030] Here, the inventors considered the reason why vaporization proceeds from the DCR 25 on the outer wall 26a side, as shown in Figure 4. In this embodiment, the flow of the carrier gas 34 is represented by arrows, and the brightness of the arrows represents the partial pressure of the DCR, with darker arrows indicating a higher partial pressure of the DCR in the carrier gas 34.

[0031] In other words, in the vaporizer 11, as the carrier gas 34 flows from each inlet 26b of the outer wall 26a toward the discharge channel 30 in each tray 26, it entrains the vaporized DCR 25, causing the partial pressure of DCR in the carrier gas 34 (hereinafter also referred to as "concentration") to increase. By the time the carrier gas 34 reaches the vicinity of the discharge channel 30, the partial pressure of DCR in the carrier gas 34 approaches the saturated vapor pressure of DCR, suppressing the vaporization of DCR 25 near the discharge channel 30 (Figure 4(A)).

[0032] As a result, vaporization of DCR25 on the outer wall 26a side progresses relatively more than that of DCR25 near the discharge channel 30, and even when the bottom of the tray 26 on the outer wall 26a side is exposed, DCR25 remains near the discharge channel 30 (Figure 4(B)).

[0033] Furthermore, the inventors used a simulation model that mimicked the vaporizer 11 to calculate the change in the DCR concentration of the carrier gas 34. Figure 5 shows a graph illustrating the calculation results of the change in the DCR concentration of the carrier gas 34, compared to a cross-section of the tray 26. As shown in the graph, it was confirmed that the DCR concentration of the carrier gas 34 reaches its saturation vapor pressure on the way from the outer wall 26a to the discharge channel 30.

[0034] Furthermore, it is thought that the concentration of DCR in the carrier gas 34 flowing through the discharge channel 30 also increases as it moves downstream. As shown in Figures 3(A) to 3(D), the amount of remaining DCR 25 increases as you move to the upper levels of each stacked tray 26, that is, as you move downstream of the carrier gas 34. From this, it was confirmed that when the concentration of DCR in the carrier gas 34 increases, the vaporization of DCR 25 is suppressed.

[0035] Therefore, in this embodiment, in each tray 26, in order to suppress vaporization from the DCR 25 on the outer wall 26a side, the concentration of DCR in the carrier gas 34 is prevented from reaching the saturation vapor pressure while the carrier gas 34 is traveling from the outer wall 26a to the discharge channel 30.

[0036] Figure 6 is a perspective view showing the configuration of the vaporization rate adjustment plates 35 used in each tray 26 of the vaporizer 11.

[0037] The vaporization rate adjustment plate 35 consists of a disc-shaped member having a circular opening 35a in the center corresponding to the discharge channel 30, and is made of stainless steel or aluminum. Furthermore, the vaporization rate adjustment plate 35 is not uniform in shape, and its surface is divided into an outer region 35b on the outer circumference side and an inner region 35c on the central side. The inner region 35c surrounds the opening 35a and is set to be located closer to the discharge channel 30 than the outer region 35b. Also, the outer region 35b is set to be located closer to the side wall 24a of the main body 24 than the inner region 35c.

[0038] In the vaporization rate adjustment plate 35, the inner region 35c has a number of relatively large through-holes, which are inner vents 35d, surrounding the opening 35a, and each inner vent 35d has a fan shape in plan view. Furthermore, the outer region 35b has a number of circular through-holes, which are outer vents 35e, formed over its entire surface.

[0039] The number and size of each inner vent 35d and each outer vent 35e are set such that the opening ratio per unit area in the inner region 35c is greater than the opening ratio per unit area in the outer region 35b. In other words, the opening ratio per unit area of ​​the vaporization rate adjustment plate 35 increases as it approaches the discharge flow path 30. Here, the opening ratio refers to the ratio of the area occupied by each inner vent 35d and each outer vent 35e to the total surface area of ​​the vaporization rate adjustment plate 35. Furthermore, the shape of each inner vent 35d is not limited to a fan shape in plan view and may exhibit other shapes, and the shape of each outer vent 35e is not limited to a circle and may exhibit other shapes.

[0040] The vaporization rate adjustment plate 35 is positioned to be fitted from above each tray 26 and is placed directly on the DCR 25 so as to cover the surface of the DCR 25. At this time, for example, in tray 26, the carrier gas 34 flows above the vaporization rate adjustment plate 35, facing the vaporization rate adjustment plate 35, from the outer wall 26a towards the discharge channel 30 (see arrow in Figure 6). Therefore, the opening ratio per unit area of ​​the vaporization rate adjustment plate 35 increases as it goes downstream in the flow of the carrier gas 34. This carrier gas 34 carries the DCR 25 that has vaporized and passed through each outer vent 35e and each inner vent 35d.

[0041] Here, since the opening ratio per unit area in the outer region 35b is smaller than the opening ratio per unit area in the inner region 35c, the amount of DCR 25 vaporizing and passing through each outer vent 35e is less than the amount of DCR 25 vaporizing and passing through each inner vent 35d. Therefore, the amount of DCR that is drawn in as the carrier gas 34 passes over the vaporization adjustment plate 35 is also reduced, and it is possible to prevent the concentration of DCR from reaching the saturation vapor pressure on the way from the outer wall 26a to the discharge channel 30.

[0042] Furthermore, the inventors used a simulation model that mimicked the vaporization device 11 to calculate the change in the DCR concentration of the carrier gas 34 when the vaporization rate adjustment plate 35 was placed directly on the DCR 25. Figure 7 is a diagram comparing a graph showing the calculation results of the change in the DCR concentration of the carrier gas 34 when the vaporization rate adjustment plate 35 is used with a cross-section of the tray 26. As shown in the graph in the figure, it was found that the DCR concentration of the carrier gas 34 does not reach the saturated vapor pressure on the way from the outer wall 26a to the discharge channel 30, and only rises to near the saturated vapor pressure when the carrier gas 34 reaches the discharge channel 30.

[0043] In other words, in this embodiment, by using the vaporization rate adjustment plate 35, it is possible to prevent the concentration of DCR from reaching the saturation vapor pressure while the carrier gas 34 is traveling from the outer wall 26a to the discharge channel 30. As a result, the vaporization of DCR 25 on the discharge channel 30 side is not suppressed, and the vaporization of DCR 25 on the outer wall 26a side is relatively suppressed.

[0044] In other words, by using the vaporization rate adjustment plate 35, the bottom of the outer wall 26a side of each tray 26 is not exposed before the bottom of the discharge channel 30 side during the film formation process, thereby suppressing a decrease in the surface area of ​​DCR 25 and a reduction in the amount of DCR 25 that vaporizes. This makes it possible to suppress a decrease in the formation efficiency of the barrier layer formed during the film formation process from the middle of the process.

[0045] Furthermore, in this embodiment, as described above, vaporization does not proceed from the DCR 25 on the outer wall 26a side, so the DCR 25 decreases almost uniformly from the outer wall 26a side to the discharge channel 30 side. In addition, the vaporization rate adjustment plate 35 is placed directly on the DCR 25. Therefore, as the vaporization of the DCR 25 progresses, the vaporization rate adjustment plate 35 descends while maintaining parallel to the bottom of each tray 26 and in contact with the DCR 25 (Figures 8(A) to 8(C)).

[0046] In this case, even if the vaporization of DCR25 causes an uneven distribution of the remaining DCR25, the vaporization adjustment plate 35 presses down on the DCR25 from above with its own weight, thus leveling the DCR25 and eliminating the uneven distribution. Furthermore, although the vaporization adjustment plate 35 is indirectly heated by the heater of the vaporizer 11, the vaporization adjustment plate 35 is in contact with the DCR25, thus assisting in the heating of the DCR25 and further promoting its vaporization.

[0047] While preferred embodiments of this disclosure have been described above, this disclosure is not limited to the embodiments described above, and various modifications and changes are possible within the scope of its essence.

[0048] For example, the vaporization rate adjustment plate 35 is divided into two regions (inner region 35c and outer region 35b) with different opening ratios per unit area, but it may also be divided into three or more regions with different opening ratios per unit area. However, in this case, the opening ratio per unit area of ​​each region is set to increase as it approaches the discharge channel 30 from the outer wall 26a. Alternatively, the vaporization rate adjustment plate 35 may not be clearly divided into multiple regions, but may have multiple vents (through holes) such that the change in opening ratio per unit area increases as it approaches the discharge channel 30.

[0049] Furthermore, even when the vaporization rate adjustment plate is divided into two regions with different opening ratios per unit area, the ratio of the outer region to the inner region is not limited to the example of vaporization rate adjustment plate 35 shown in Figure 6. For example, depending on the remaining form of DCR25, a vaporization rate adjustment plate 36 may be used in which the outer region 36b is smaller than the outer region 35b of vaporization rate adjustment plate 35, and the inner region 36c is larger than the inner region 35c of vaporization rate adjustment plate 35 (Figure 9(A)). Alternatively, a vaporization rate adjustment plate 37 may be used in which the outer region 37b is larger than the outer region 35b of vaporization rate adjustment plate 35, and the inner region 37c is smaller than the inner region 35c of vaporization rate adjustment plate 35 (Figure 9(B)).

[0050] Furthermore, vaporization rate adjustment plates with different overall opening ratios may be used in each tray 26. For example, as described above, in the vaporizer 11, the amount of remaining DCR 25 increases as you go to the upper layers of the stacked trays 26, that is, as you go downstream of the carrier gas 34. In response to this, the overall opening ratio of each vaporization rate adjustment plate may be set to decrease as you go to the lower layers of each tray 26, which correspond to the upstream of the carrier gas 34.

[0051] This reduces the amount of DCR entrained upstream of the carrier gas 34, preventing the DCR concentration from reaching saturation vapor pressure midway through the discharge channel 30. As a result, it prevents the vaporization of DCR 25 from being suppressed in the upper tray 26 corresponding to the downstream of the carrier gas 34, and prevents differences in the remaining amount of DCR 25 in each tray 26.

[0052] As shown in Figure 9, the overall aperture ratio of the vaporization rate adjustment plate 36 is greater than that of the vaporization rate adjustment plate 35, and the overall aperture ratio of the vaporization rate adjustment plate 37 is smaller than that of the vaporization rate adjustment plate 35. Therefore, in the film formation process, for example, the vaporization rate adjustment plate 37 (Figure 9(B)) is used in the lower tray 26, the vaporization rate adjustment plate 35 (Figure 6) is used in the middle tray 26, and the vaporization rate adjustment plate 36 (Figure 9(A)) is used in the upper tray 26.

[0053] In any case, any vaporization rate adjustment plate in which the opening ratio per unit area is set to be larger the further downstream it is from the carrier gas 34 corresponds to one embodiment of the technology according to this disclosure.

[0054] Furthermore, as shown in Figures 3(A) to 3(E), the remaining form of DCR25 is not uniform in the circumferential direction in each tray 26, and there is an uneven distribution of DCR25. Therefore, the opening ratio of the vaporization rate adjustment plate may be changed in the circumferential direction. For example, as shown in Figure 10, in the vaporization rate adjustment plate 38, in the inner region 38c, the inner vents 38d are made larger in areas where the amount of remaining DCR25 is large in the circumferential direction, and smaller in areas where the amount of remaining DCR25 is small. Also, in the outer region 38b, the number of outer vents 38e is increased in areas where the amount of remaining DCR25 is large in the circumferential direction, and decreased in areas where the amount of remaining DCR25 is small.

[0055] In the above-described embodiment, when performing the film formation process, the vaporization rate adjustment plate 35 was placed directly on the DCR 25 in each tray 26. However, by providing an overhang on the outer wall 26a and engaging the vaporization rate adjustment plate 35 with the overhang, the film formation process may be performed while keeping the vaporization rate adjustment plate 35 and the DCR 25 separated. [Explanation of symbols]

[0056] 10 Semiconductor Manufacturing Systems 11. Vaporizer 12 Film deposition equipment 25 DCR 26 trays 30 Discharge channel 34 Carrier gas 35. Vaporization rate adjustment plate 35d Inner vent 35e Exterior vent

Claims

1. A vaporization rate adjustment plate covering the surface of the solid raw material, It comprises a discharge channel for discharging the carrier gas flowing toward the vaporization rate adjustment plate, The vaporization rate adjustment plate has a plurality of through holes, The aperture ratio per unit area of ​​the vaporization rate adjustment plate changes along the flow direction of the carrier gas. A vaporizer that transports a predetermined raw material that has been vaporized from the solid raw material and passed through the plurality of through holes, wherein the carrier gas is vaporized.

2. The vaporization apparatus according to claim 1, wherein the opening ratio per unit area of ​​the vaporization rate adjustment plate increases as it moves downstream of the carrier gas flow.

3. The vaporization apparatus according to claim 1, wherein the opening ratio per unit area of ​​the vaporization rate adjustment plate increases as it approaches the discharge flow path.

4. The system further comprises a cylindrical body and a tray in which the solid raw material is filled, The tray is housed inside the main body. In the tray, the vaporization rate adjustment plate is arranged to cover the surface of the solid raw material. The aforementioned discharge channel is formed along the central axis of the main body, The vaporizer according to claim 3, wherein the carrier gas is introduced from the side of the main body toward the interior of the main body.

5. The vaporization rate adjustment plate has at least an outer region close to the outer wall of the main body and an inner region closer to the discharge channel than the outer region, The vaporizer according to claim 4, wherein the aperture ratio per unit area in the inner region is greater than the aperture ratio per unit area in the outer region.

6. The aforementioned body is cylindrical in shape, The tray consists of a ring-shaped container surrounding the discharge channel. The vaporizer according to claim 5, wherein the through-hole in the inner region has a fan shape in plan view.

7. The aforementioned body is cylindrical in shape, The tray consists of a ring-shaped container surrounding the discharge channel. The vaporization apparatus according to claim 5, wherein the opening ratio per unit area of ​​the vaporization rate adjustment plate also changes with respect to the circumferential direction of the tray.

8. Inside the main body, a plurality of trays are arranged so as to be stacked in the direction of the central axis of the main body. The vaporization apparatus according to claim 4, wherein the opening ratio of each vaporization rate adjustment plate arranged in each tray increases as it moves downstream of the discharge channel.

9. The vaporization apparatus according to claim 1, wherein the vaporization rate adjustment plate is made of stainless steel or aluminum.

10. The vaporization rate adjustment plate is placed directly on the solid raw material, as described in claim 1.

11. The vaporization apparatus according to claim 1, further comprising a heating means for heating the solid raw material.

12. A vaporizer that vaporizes a predetermined raw material from a solid raw material, The apparatus comprises a film-forming apparatus that deposits the vaporized predetermined raw material onto a substrate to form a film, The vaporizer comprises a vaporization rate adjustment plate covering the surface of a solid raw material, and a discharge channel for discharging the carrier gas flowing toward the vaporization rate adjustment plate. The vaporization rate adjustment plate has a plurality of through holes, and the opening ratio per unit area of ​​the vaporization rate adjustment plate changes along the flow direction of the carrier gas. A semiconductor manufacturing system in which, in the vaporization apparatus, the carrier gas transports the predetermined raw material that has vaporized from the solid raw material and passed through the plurality of through holes.

13. A method for vaporizing a solid raw material in a vaporizer comprising a vaporization rate adjustment plate covering the surface of the solid raw material, wherein the vaporization rate adjustment plate has a plurality of through holes, and the opening ratio per unit area of ​​the vaporization rate adjustment plate changes along the flow direction of a carrier gas that transports a predetermined raw material vaporized from the solid raw material, A step of covering the surface of the solid raw material with the vaporization rate adjustment plate, The process of flowing the carrier gas toward the vaporization rate adjustment plate, A method for vaporizing a solid raw material, comprising the step of transporting the predetermined raw material that has vaporized from the solid raw material and passed through the plurality of through holes using a carrier gas.

14. The vaporization rate adjustment plate is placed directly on the solid raw material. The method for vaporizing a solid raw material according to claim 13, wherein the vaporization rate adjustment plate descends in accordance with the progress of vaporization of the solid raw material.

15. The method for vaporizing a solid raw material according to claim 13, wherein the solid raw material is heated.

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