Insulating insulator, charged particle gun equipped with insulating insulator, charged particle beam apparatus equipped with insulating insulator, and method for manufacturing insulating insulator.

Abstract

The present invention provides an insulator and the like capable of withstanding an acceleration voltage of 100,000 electron volts or more without using an acceleration tube having a multi-stage structure. An insulator 1 comprises: an insulation member 10; a cathode and an anode that are provided to the insulation member 10; and a metal film 13 that is provided to the surface of the insulation member 10. The metal film 13 has one or a plurality of metal films 13b with a surface resistance of 1012 Ω / sq to 1015 Ω / sq between the cathode and the anode.

Description

[Technical Field]

[0001] This disclosure relates to an insulating insulator, a charged particle gun equipped with an insulating insulator, a charged particle beam apparatus equipped with an insulating insulator, and a method for manufacturing an insulating insulator. [Background technology]

[0002] Electron beams and ion beams used in electron microscopes, ion beam processing equipment, or electron beam accelerators installed in synchrotron radiation facilities are structured to accelerate electrons and ions by imparting energy to them, particularly during their initial acceleration, using a high DC voltage. In particular, in electron microscopes, the electron source is supplied with a negative high voltage relative to the ground potential, and the electrons are accelerated by the potential difference between the electron source and the ground potential. In this case, the energy of the electron beam ranges from several hundred electron volts to several hundred thousand electron volts.

[0003] In these devices, the electron source or ion source is placed under high voltage, and the generated electrons or ions are accelerated using the potential difference towards an anode (in the case of an electron beam or anion beam) or cathode (in the case of a cation beam) that has a potential close to zero, thereby obtaining an electron beam or ion beam.

[0004] In this case, when using an electron or ion source maintained at a high voltage of 100,000 electron volts or more, a tube called an "accelerating tube" is almost always formed to connect it to the ground potential. In most cases, this accelerating tube also serves as a vacuum vessel and acts as a passage for the electron or ion beam. To maintain a high voltage without discharge, the accelerating tube must be made of an insulator or a highly resistive material.

[0005] When a high voltage is applied to electrodes placed on such a high-resistance material, a phenomenon called "surface discharge" occurs, where a discharge occurs along the surface of the high-resistance material between the electrodes. A model of surface discharge is shown in Figure 11. When a negative voltage is applied to the cathode 1111 and the voltage is increased, a negative electric field concentrates at the triple point where the cathode 1111, the vacuum, and the dielectric insulator 1110 intersect. When this limit is exceeded, field-emitted electrons are emitted into the vacuum. As the emitted electrons move towards the anode 1112, they collide with the insulator 1110. If there is one or more secondary electrons generated at this time, the number of electrons increases in an avalanche-like manner and flows into the anode 1112. In this state, the cathode 1111 and the anode 1112 are in a short-circuit relationship, leading to discharge. Therefore, in order to suppress surface discharge, it is necessary to lower the voltage or increase the distance between the cathode and anode to mitigate the concentration of the electric field.

[0006] Next, the structure of a conventional electron gun will be explained using Figure 12. The electron beam, extracted from the electron source 1201 by the potential difference with the extraction electrode 1202 and emitted, is accelerated between the electron beam and the anode 1212, which is at ground potential, and passes through the accelerating tube 1215. This accelerating tube 1215 is equipped with numerous intermediate electrodes 1208-1 to 1208-4. The intermediate electrodes 1208-1 to 1208-4 are maintained at approximately equal potentials from a potential close to the extraction electrode 1202 toward ground potential using resistors 1209-1 to 1209-4, and these form a multi-stage accelerating tube 1215. This multi-stage structure is used to maintain a uniform potential difference between the control electrode 1207 and each intermediate electrode 1208-1 to 1208-3, and to mitigate electric field concentration. Furthermore, insulating insulators 1210-1 to 1210-4 are incorporated to insulate the control electrode 1207, each intermediate electrode 1208-1 to 1208-3, and the anode 1212. As a result, there is an inherent challenge of the device becoming large.

[0007] Patent documents 1 and 2 disclose the multi-stage accelerating tube described above. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 60-262339 [Patent Document 2] Japanese Patent Application Publication No. 3-84839 [Overview of the Initiative] [Problems that the invention aims to solve]

[0009] Electron microscopes include transmission electron microscopes (commonly called TEMs) and scanning electron microscopes (commonly called SEMs). Of these, the acceleration voltage in SEMs is limited to around 30,000 electron volts, and since there is no need for the aforementioned accelerating tube, lightweight and compact electron guns that do not require an accelerating tube have been used. As a result, it is possible to reduce the overall size and weight of the device and lower the cost, so SEMs are more widely used than TEMs.

[0010] SEMs play a crucial role in semiconductor manufacturing process inspection, measuring the shape of semiconductor patterns and serving as a key piece of equipment for quality control. As semiconductors become more highly integrated, device structures are becoming more three-dimensional, increasing the demand for measuring the shapes of finer and deeper holes. This necessitates higher accelerating voltages, and we are reaching a point where accelerating tubes of around 100,000 electron volts should be introduced.

[0011] The purpose of this disclosure is to provide an insulating insulator capable of withstanding an acceleration voltage of 100,000 electron volts or more without using a multi-stage accelerating tube, a charged particle gun equipped with the insulating insulator, a charged particle beam apparatus equipped with the insulating insulator, and a method for manufacturing the insulating insulator. [Means for solving the problem]

[0012] The insulator of this disclosure comprises an insulating member, a first electrode and a second electrode provided on the insulating member, A metal film provided on the surface of an insulating member, and the metal film has one or more regions having a resistivity of 10 12 Ω / sq to 10 15 Ω / sq between the first electrode and the second electrode.

[0013] In addition, the charged particle gun of the present disclosure includes the above-described insulating ceramic.

[0014] In addition, the charged particle beam device of the present disclosure includes the above-described insulating ceramic.

[0015] In addition, the manufacturing method of the insulating ceramic of the present disclosure includes preparing an insulating member, forming one or more grooves on the outer peripheral surface of the insulating member, and forming a metal film on the outer peripheral surface on which the grooves are formed, and having a resistivity of 10 on the side wall surface which is the inclined surface constituting the groove 12 Ω / sq to 10 15 Ω / sq and providing one or more regions.

Advantages of the Invention

[0016] According to the present disclosure, it is possible to provide an insulating ceramic capable of withstanding an acceleration voltage of 100,000 electron volts or more without using an acceleration tube having a multi-stage structure, a charged particle gun including the insulating ceramic, a charged particle beam device including the insulating ceramic, and a method for manufacturing the insulating ceramic. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Brief Description of the Drawings

[0017] [Figure 1] It is a cross-sectional view showing the structure of the insulating ceramic 1 of Example 1. [Figure 2] It is a graph showing the relationship between the film thickness of titanium nitride and the resistivity. [Figure 3] It is a partially enlarged view of the groove cross-section of the insulating ceramic 1 of Example 1. [Figure 4] It is a cross-sectional view showing the structure of the insulating ceramic 2 of Example 2. [Figure 5] It is a view showing the structure of the electron gun 500 of Example 3. [Figure 6] This figure shows the structure of the charged particle beam apparatus 600 of Example 4. [Figure 7] This figure shows the first modified example of the insulator 701. [Figure 8] This figure shows a second modified example of the insulator 801. [Figure 9] This figure shows the third modified example of the insulator 901. [Figure 10] This figure shows the fourth modified example of the insulator 1001. [Figure 11] This is a diagram illustrating a model of surface discharge. [Figure 12] This is a diagram showing the structure of a conventional electron gun. [Modes for carrying out the invention]

[0018] In the following embodiments, the description will be divided into multiple sections or embodiments where necessary for convenience. Unless otherwise specified, these are not unrelated, and one may be a modification, detail, or supplementary explanation of part or all of the other.

[0019] Furthermore, in the following embodiments, when referring to the number of elements (including the number of elements, numerical values, quantities, ranges, etc.), unless specifically stated or clearly limited in principle to a particular number, it is not limited to that particular number, and may be greater than or less than that number.

[0020] Furthermore, it goes without saying that in the following embodiments, the constituent elements (including elemental steps, etc.) are not necessarily essential, except in cases where they are specifically indicated or where they are clearly essential in principle.

[0021] Similarly, in the following embodiments, when referring to the shape, positional relationship, etc., of components, unless otherwise specifically stated or when it is clearly not the case in principle, it shall include those that substantially approximate or resemble such shapes, etc. The same applies to the numerical values ​​and ranges mentioned above.

[0022] Furthermore, in all the drawings used to illustrate the embodiments, the same reference numerals are generally used for identical components, and repeated explanations of them are omitted. [Examples]

[0023] (Structure of insulator 1) Figure 1 shows the structure of the insulating insulator 1 of Example 1. The insulating insulator 1 comprises a substantially cylindrical insulating member 10, a cathode 11 (first electrode) and an anode 12 (second electrode) provided on the insulating member 10, and a metal film 13 provided on the surface (outer surface) of the insulating member 10. The metal film 13 has a resistivity of 10 between the cathode 11 and the anode 12. 12 Ω / sq~10 15 It has multiple annular regions with a density of Ω / sq. This will be explained in detail below.

[0024] The insulating member 10 is, for example, alumina (Al2O3). The secondary electron yield of alumina is approximately 7 to 8 at most. The insulating member 10 has a hollow space 10a. Multiple annular grooves 10b are formed on the outer circumferential surface of the insulating member 10 along the circumferential direction of the insulating member 10. A metal film 13 with a secondary electron yield lower than that of the insulating member 10 is provided on the outer circumferential surface where the multiple grooves 10b are formed. The metal film 13 is, for example, titanium nitride (TiN). The secondary electron yield of titanium nitride is 2 to 3. It is known that lowering the secondary electron yield can mitigate the electron avalanche phenomenon.

[0025] However, since titanium nitride is a conductive material, its resistivity changes depending on the film thickness. The graph shown in Figure 2 illustrates the relationship between the film thickness (thickness) and resistivity (surface resistance) of titanium nitride. From this graph, if the film thickness of titanium nitride is greater than 3 nm, the resistivity is 10 4It becomes less than Ω / sq and enters a region that can be regarded as almost a conductor. However, when the film thickness of titanium nitride becomes 1 nm to 3 nm, it becomes a region of discontinuous semiconduction where islands are scattered rather than a continuous film, and when the film thickness changes by 0.1 nm, the resistivity changes by several orders of magnitude, resulting in an unstable state. On the other hand, when the film thickness of titanium nitride becomes 0 to 1 nm, it shows a resistivity equivalent to that of alumina and becomes an insulating region.

[0026] When a voltage of 100,000 electron volts is applied to the cathode 11 here, in order to avoid heat generation due to Joule heat caused by the power of the power supply and the current flowing between the anode and the cathode, it is necessary to suppress the current value to 1 μA or less from several nA. Therefore, the resistivity of the metal film 13 should be controlled to about 10 12 Ω / sq to 10 15 Ω / sq. The film thickness of titanium nitride corresponding to this resistivity range (the target region in Figure 2) requires very strict accuracy of 1.5 to 2.0 nm.

[0027] (Film formation method of the metal film 13) In this embodiment, in order to achieve film formation with the above accuracy, the following method was used. The film formation method of the metal film 13 will be described using Figure 3. Figure 3 is an enlarged view of a part of the groove cross-section of the insulating gasket 1 of Example 1.

[0028] A groove 10b is formed on the surface 10c of the insulating member 10. The groove 10b includes two inclined surfaces 10d and a bottom surface 10e sandwiched by the two inclined surfaces 10d. The inclined surface 10d is formed at an inclination of 30° with respect to the perpendicular V to the surface 10c (hereinafter, this angle is referred to as the angle of the inclined surface 10d). On the outer peripheral surface of the insulating member 10 where such a groove 10b is formed, a metal film 13 of titanium nitride is formed, for example, by the DC magnetron sputtering method. In the DC magnetron sputtering method, film formation proceeds by perpendicularly incident strongly directional particles on the outer peripheral surface of the insulating member 10. Here, the metal film formed on the surface 10c is the metal film 13a (second region), the metal film formed on the inclined surface 10d is the metal film 13b (first region), and the metal film formed on the bottom surface 10e is the metal film 13c (second region).

[0029] As described above, the DC magnetron sputtering method deposits a film (metal film 13b) with a volume equal to length a in the direction H along the surface 10c of the inclined surface 10d, which is length b. Therefore, the thickness of the metal film 13b on the inclined surface 10d is a / b of the thickness of the metal film 13a on the surface 10c. For example, as shown in Figure 3, if the angle of the inclined surface 10d is 30°, and a 3 nm thick metal film 13a is deposited on the surface 10c, a 1.5 nm thick metal film 13b will automatically be deposited on the inclined surface 10d. In this case, if the variation in the thickness of the metal film 13a on the surface 10c is ±0.5 nm, the variation in the thickness of the metal film 13b on the inclined surface 10d will be reduced to ±0.25 nm. Thus, the above film deposition method has the advantage of enabling high-precision deposition of the metal film 13b on the inclined surface 10d.

[0030] Furthermore, since the thickness of the metal film 13a formed on the surface 10c is 3 nm, it is almost a conductive film. Therefore, when a voltage is applied to the cathode 11, the titanium nitride film (metal film 13a) formed on the surface 10c of the insulating member 10 electrically connected to the cathode 11 becomes equal to the potential of the cathode 11. Then, the metal film 13b formed on the inclined surface 10d electrically connected to the metal film 13a has a high resistivity and therefore experiences a large potential drop from the potential of the cathode 11. And, since the titanium nitride film (metal film 13c) on the bottom surface 10e electrically connected to the metal film 13b is 3 nm thick, it becomes equal to the potential after the potential drop. This phenomenon of stepwise voltage drop is repeated from the cathode 11 to the anode 12, so the potential on the outer surface of the insulating insulator 1 is aligned in a stepwise manner. As a result, the insulating insulator 1 has the advantage of being able to obtain the same effect as a resistor composed of conventional accelerating tubes without using a resistor, without the need for a conventional multi-stage accelerating tube.

[0031] In this embodiment, the angle of the inclined surface 10d was set to 30°, but it is obvious that the effect can be obtained regardless of the angle of the inclined surface 10d, which can be set to any angle from approximately 0° to 45°. Also, the thickness of the titanium nitride film (metal film 13a and 13c) formed on the surface 10c and bottom surface 10e was set to 3 nm, but the thickness can be set to approximately 2 to 10 nm, and the angle of the inclined surface 10d can be appropriately selected so that the resistivity of the metal film 13b formed on the inclined surface 10d becomes the desired resistivity. In addition, although an example with 3 grooves 10b is shown (see Figure 1), there is no limit to the number of grooves 10b; there may be 2 or fewer, or 4 or more.

[0032] Furthermore, in this embodiment, titanium nitride (TiN), which has a lower secondary electron yield than alumina, was used as the material for the metal film 13, but chromium (Cr), chromium oxide (Cr2O3), etc., may also be used.

[0033] Furthermore, by providing a radius (R) at the corners of the end shape of the groove 10b (for example, the corner connecting the surface 10c and the slope 10d, or the corner connecting the slope 10d and the bottom surface 10e), the change in film thickness may be made more gradual, thereby mitigating the electric field concentration that occurs at those corners.

[0034] (Method of manufacturing an insulating insulator 1) Here, we will explain the manufacturing method of the insulating insulator 1. The method for manufacturing the insulating insulator 1 is: Prepare an insulating member 10 that is roughly cylindrical in shape. One or more grooves 10b are formed on the outer surface of the insulating member 10, and Using the above-described film formation method, a metal film 13 is formed on the outer surface where the groove 10b is formed, and the inclined surface 10d constituting the groove 10b has a resistivity of 10 12 Ω / sq~10 15 The present invention includes providing a metal film 13b with a density of Ω / sq.

[0035] (Effects of Example 1) In Example 1, one or more grooves 10b are formed on the outer circumferential surface of the insulating member 10, and a metal film 13 is deposited on the outer circumferential surface of the insulating member 10 where the grooves 10b are formed using a highly directional film deposition method, thereby increasing the resistivity of the slope 10d of the grooves 10b to 1012 Ω / sq~10 15 A metal film 13b with a density of Ω / sq can be formed. This makes it possible to obtain an insulating insulator 1 that can withstand an accelerating voltage of 100,000 electron volts or more.

[0036] Furthermore, in Example 1, one or more grooves 10b are formed on the outer surface of the insulating member 10, and a metal film 13 is deposited on the outer surface of the insulating member 10 with grooves 10b using a highly directional film deposition method, thereby alternately forming metal films 13a and 13b with different resistivity. This makes it possible to obtain the same effect as a conventional resistor composed of an accelerating tube without the need for a resistor. [Examples]

[0037] Figure 4 shows the structure of the insulator 2 of Example 2. The secondary electron yield of titanium nitride used in the insulator 1 of Example 1 is lower than that of alumina, so the probability of surface discharge is reduced. However, in Example 1, the maximum value of the secondary electron yield is greater than 1, so electron avalanches cannot be completely eliminated. Therefore, in Example 2, a groove 210b is formed on the outer surface of the insulating member 210, which gradually rises from the cathode 11 to the anode 12. The height of the slope 210d2 on the anode 12 side of the groove 210b is higher than the slope 210d1 on the cathode 11 side. By configuring it in this way, even a small amount of secondary electrons (e - The electrons ) collide with the inclined surface 210d of the groove 210b and are attenuated, which efficiently reduces the number of electrons reaching the anode 12.

[0038] In the above-described embodiment 2, the slope of the groove 210b was gradually raised from the cathode 11 to the anode 12. However, if the slope 210d2 on the anode 12 side of one groove 210b selected from among the multiple grooves 210b is higher than the slope 210d1 on the cathode 11 side of that groove 210b, it is not necessary to gradually raise the slope. [Examples]

[0039] Figure 5 shows the structure of the electron gun 500 in Example 3. The electron gun 500 (charged particle gun) in Example 3 includes the insulating insulator 1 of Example 1. The electron gun 500 may also include the insulating insulator 2 of Example 2. The electron gun 500 comprises the insulating insulator 1, electron source 501 (charged particle source), lead electrode 502, electron gun column 503, and high-voltage connector 504. A cable 510 is connected to the high-voltage connector 504.

[0040] An electron source 501 and an extraction electrode 502 are connected to the cathode 11 of the insulating insulator 1, and the ground potential is connected to the anode 12. In this embodiment, the electron source 501 is described as a cold cathode electron source, but the electron source 501 may be other Schottky electron sources, etc. A negative voltage of the acceleration voltage V0 is applied to the electron source 501, and a voltage several kilovolts lower than V0 is applied to the tip of the electron source 501 and to the extraction electrode 502 which generates a strong electric field. The electron beam extracted from the electron source 501 is emitted downward in the drawing and incident on an optical system (not shown).

[0041] As described in Example 1, a plurality of grooves 10b are formed on the outer surface of the insulating insulator 1, and a titanium nitride film is deposited on the outer surface where the plurality of grooves 10b are formed by DC magnetron sputtering. The angle of the slope 10d of the grooves 10b and the film thickness are the same as those described in Example 1.

[0042] Since the electron source 501 needs to operate in an ultra-high vacuum, the various components of the electron gun 500 are located inside the electron gun column 503. The electron gun column 503 is almost always made of stainless steel. In order to create an ultra-high vacuum inside the electron gun column 503, it is necessary to evacuate the air at atmospheric pressure during startup using a vacuum pump, and to bake the entire electron gun column 503 at over 200°C to reduce the amount of gas released from the stainless steel wall. At this time, the insulating insulator 1 is also exposed to high temperatures. At this time, metal atoms on the surface of the insulating insulator 1 tend to diffuse into the interior of the insulator, so caution is necessary. This is because when metal elements diffuse into the interior of the insulating insulator 1, the resistivity of the surface may fluctuate downwards. Titanium nitride used in the insulating insulator 1 has a diffusion barrier effect, which has the advantage of reducing such resistivity fluctuations.

[0043] Once baking is complete and the electron gun 500 has returned to room temperature, the high-voltage power supply and the electron gun 500 are connected via cable 510 and high-voltage connector 504. The voltage supplied is provided through cable 510 from a high-voltage power supply (not shown) located on the atmospheric side (outside the electron gun column 503). The accelerating voltage V0 of the high-voltage power supply is 100,000 electron volts, and the electron gun 500 in this embodiment is applicable to scanning electron microscopes (SEMs) and transmission electron microscopes (TEMs). Furthermore, although not described in detail, it is obvious that it is also applicable to charged particle beam devices using ion beams, with only the sign of the accelerating voltage being reversed. [Examples]

[0044] Figure 6 shows the structure of the charged particle beam apparatus 600 of Example 4. The charged particle beam apparatus 600 of Example 4 comprises the electron gun 500 of Example 3, a focusing lens 601, a blanking deflector 602, an aperture plate 603, an image shift deflector 604, an objective lens 605, a stage 606, a detector 607, a blanking voltage application device 608, a blanking voltage control device 609, a focusing lens control device 610, and a computer system 611.

[0045] The electron beam (primary beam) 612 emitted from the electron gun 500 passes through the aperture hole 603a of the aperture plate 603 due to the focusing action of the magnetic field of the focusing lens 601. After passing through the aperture hole 603a, the electron beam 612 is scanned over the sample 613 placed on the stage 606 by the electric or magnetic field of the image shift deflector 604, and is focused over the sample 613 due to the focusing action of the magnetic field of the objective lens 605. Secondary electrons 614 generated from the sample 613 by the irradiation of the electron beam 612 are detected by the detector 607. This provides an enlarged image of the scanning region of the electron beam 612 on the sample 613.

[0046] (modified version) The present invention is not limited to the embodiments described above, and includes various modifications. For example, the embodiments described above are described in detail to make the present invention easier to understand, and are not necessarily limited to those having all the configurations described. Furthermore, it is possible to replace parts of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add configurations from other embodiments to the configuration of one embodiment. In addition, it is possible to add, delete, or replace parts of the configuration of each embodiment with other configurations.

[0047] For example, Figure 7 shows an insulating insulator 701 of the first modified example. The insulating insulator 701 of the first modified example comprises an insulating member 710, a cathode 11, an anode 12, and a metal film 713 formed on the outer circumferential surface of the insulating member 710, similar to the insulating insulator 1 of Example 1. No grooves are formed on the outer circumferential surface of the insulating insulator 701 of the first modified example. In the first modified example, regions 713a with a large film thickness of the metal film 713 and regions 713b with a small film thickness are alternately formed along the direction from the cathode 11 to the anode 12. The film thickness of region 713b has a resistivity of 10 12 ~10 15 It is controlled to be Ω / sq. Regions 713a and 713b are metal films made of the same material.

[0048] Figure 8 shows a second modified example of the insulator 801. The second modified example of the insulator 801 includes an insulating member 810, a cathode 11, an anode 12, and a metal film 813 formed on the outer surface of the insulating member 810, similar to the insulator 1 of Example 1. No grooves are formed on the outer surface of the second modified example of the insulator 801. The metal film 813 of the second modified example of the insulator 801 has a resistivity of 10 12 ~10 15 A first metal film 813a controlled to be less than Ω / sq, and a resistivity of 10 12 ~10 15 The invention comprises a second metal film 813b controlled to have a coefficient of Ω / sq. In a second modified example, for example, the first metal film 813a is produced from a metal material selected from titanium nitride, chromium, and chromium oxide, and the second metal film 813b is produced from a metal material different from that of the first metal film 813a.

[0049] Figure 9 shows an insulating insulator 901 of the third modified example. The insulating insulator 901 of the third modified example comprises an insulating member 910, a cathode 11, an anode 12, and a metal film 913 formed on the outer circumferential surface of the insulating member 910, similar to the insulating insulator 1 of Example 1. No grooves are formed on the outer circumferential surface of the insulating insulator 901 of the third modified example. Only one region 913a with a large film thickness of the metal film 913 and one region 913b with a small film thickness are formed. The film thickness of region 913b has a resistivity of 10 12 ~10 15 It is controlled to be Ω / sq.

[0050] Figure 10 shows an insulating insulator 1001 of the fourth modified example. The insulating insulator 1001 of the fourth modified example comprises an insulating member 1010, a cathode 11, an anode 12, and a metal film 1013 formed on the outer circumferential surface of the insulating member 1010, similar to the insulating insulator 1 of Example 1. No grooves are formed on the outer circumferential surface of the insulating insulator 1001 of the fourth modified example. The metal film 1013 of the fourth modified example is formed so that its film thickness changes linearly. In the fourth modified example, the film thickness of the metal film 1013 is formed to gradually decrease from the cathode 11 to the anode 12, but it may also be formed so that the film thickness gradually increases. In the region of small film thickness, the resistivity is 1012 ~10 15 It is controlled to be Ω / sq.

[0051] Furthermore, in the above-described embodiment, the metal film 13 was produced by DC magnetron sputtering, but the method for producing the metal film 13 is not limited to DC magnetron sputtering; other sputtering methods or vapor deposition methods may also be used. [Explanation of symbols]

[0052] 1,701,801,901,1001: Insulating insulators 10,210,710,810,910,1010: Insulating material 10a:Hollow 10b,210b: Groove 10c: surface 10d: Slope 10e: Bottom 11: Cathode 12: Anode 13,13a,13b,13c,713,813,913,1013: Metal film 500: Electron gun 501: Electron source 502: Extraction electrode 503: Electron gun column 504: High-voltage connector 510: Cable 600: Charged Particle Beam Device 601: Converging lens 602: Blanking deflector 603: Dipping plate 604: Image Shift Deflector 605: Objective lens 606: Stage 607: Detector 608: Blanking voltage application device 609: Blanking Voltage Control Device 610: Focusing lens control device 611: Computer System 612: Electron beam 613: Sample 614:Secondary electron 713a, 913a: Regions with large film thickness 713b, 913b: Regions with low film thickness 813a: First metal film 813b: Second metal film

Claims

1. Insulating material, The first electrode and the second electrode provided on the insulating member, The insulating member comprises a metal film provided on its surface, The metal film has a resistivity of 10 between the first electrode and the second electrode. １２ Ω / sq ~ 10 １５ It has one or more first regions with a resistivity of Ω / sq and one or more second regions with a resistivity smaller than that of the first regions. The first region and the second region are alternately provided along the direction from the first electrode toward the second electrode. An insulating insulator characterized by the following features.

2. The first region and the second region are metal films of the same material. The film thickness in the first region is smaller than the film thickness in the second region. The insulating insulator according to feature 1.

3. One or more annular grooves are formed on the surface of the insulating member. The first region is formed on the inclined surface constituting the groove, and the second region is formed on the bottom surface or surface constituting the groove. The insulating insulator according to feature 2.

4. The height of the slope on the second electrode side that constitutes the groove is higher than the slope on the first electrode side. The insulating insulator according to feature 3.

5. The aforementioned slope is inclined at an angle of 0° to 45° with respect to the perpendicular to the surface. The insulating insulator according to feature 3.

6. The first region and the second region are metal films made of different materials. The insulating insulator according to feature 1.

7. The metal film is a metal film whose thickness gradually decreases or increases along the direction from the first electrode to the second electrode. In the region of low film thickness, the resistivity is 10 １２ Ω / sq ~ 10 １５ The result is Ω / sq. The insulating insulator according to feature 1.

8. The metal film consists of titanium nitride, chromium, or chromium oxide. The insulating insulator according to feature 1.

9. The insulating insulator according to claim 1, A charged particle source, The system comprises an extraction electrode connected to the first or second electrode of the insulating insulator, which extracts a charged particle beam from the charged particle source. A charged particle gun characterized by the following features.

10. The charged particle gun is provided as described in claim 9. A charged particle beam apparatus characterized by the following features.

11. Prepare insulating materials. The insulating member is provided with a first electrode and a second electrode, and The resistivity along the direction from the first electrode to the second electrode is 10 １２ Ω / sq ~ 10 １５ The method involves alternately providing one or more first regions with a resistivity of Ω / sq and one or more second regions with a resistivity lower than that of the first regions. A method for manufacturing insulating insulators, characterized by the above.

12. One or more grooves are formed on the surface of the insulating member. The arrangement of the first and second regions alternately includes forming the first region on the inclined surface constituting the groove and forming the second region on the bottom surface constituting the groove using a DC magnetron sputtering method. The method for manufacturing an insulating insulator according to feature 11.

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