Methods for reducing chamber residue

Abstract

The present disclosure relates to a system and method for reducing the formation of hardware residues and minimizing the formation of secondary plasma during substrate processing in a processing chamber. The processing chamber may include a gas distribution member configured to flow a first gas into a processing volume and generate a plasma therefrom. A second gas is supplied to a lower region of the processing volume. Further, an exhaust port is disposed in the lower region for removing excess gas or by-products from the processing volume during or after processing.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to methods and apparatuses for minimizing the formation of residues on chamber walls and hardware components during a substrate deposition process, e.g., on hardware components of a processing chamber during the deposition of a thin film on a semiconductor substrate.

Background Art

[0002] Plasma enhanced chemical vapor deposition (PECVD) can be used to form one or more thin films on a substrate for semiconductor device manufacturing. Due to the continuous scaling of their dimensions and the utilization of multi-stack structures, semiconductor devices require higher memory density, leading to increased concerns about the control of the film characteristics of semiconductor devices. The main cause of defects in the film formation process is the presence of residues in the deposition chamber, particularly residues deposited in undesirable regions such as the chamber bottom region and the slit valve region. The presence of such residues in the chamber not only results in defective semiconductor devices but also increases the cleaning time between deposition cycles, thus reducing the overall production throughput and increasing the manufacturing cost. Factors contributing to the accumulation of chamber residues include the errant dispersion of plasma throughout the chamber and the formation of undesirable parasitic plasmas.

[0003] Therefore, there is a need in the art for improved methods and apparatuses for minimizing the deposition and accumulation of residues on chamber components.

Summary of the Invention

[0004] In one embodiment, a method for forming a film includes introducing a first gas into the processing volume of a processing chamber at a first flow rate, generating a plasma from the first gas to form a film on a substrate placed on a substrate support assembly, and introducing a second gas into the processing volume at a second flow rate. The second gas is introduced into the lower region of the processing volume through a gas introduction port located beneath the substrate support assembly. The ratio of the first flow rate to the second flow rate is between approximately 0.5 and approximately 3.

[0005] In one embodiment, a method for forming a film includes introducing a first gas into the processing volume of a processing chamber at a first flow rate, generating plasma from the first gas to form a film on a substrate placed on a substrate support assembly, and introducing a second gas into the processing volume at a second flow rate accounting for 40% of the total flow rate in the processing chamber. The second gas is introduced into the lower region of the processing volume through a gas introduction port located beneath the substrate support assembly.

[0006] In one embodiment, a method for forming a film includes introducing a first gas into the processing volume of a processing chamber at a first flow rate, generating a plasma from the first process gas to form a film on a substrate placed on a substrate support assembly, and introducing oxygen gas into the processing volume at a second flow rate accounting for at least 40% of the total flow rate of the processing chamber. The ratio of the first flow rate to the second flow rate is between approximately 0.5 and approximately 3. The oxygen gas is introduced into the lower region of the processing volume through a gas introduction port located beneath the substrate support assembly to promote a spontaneous combustion reaction and consume unreacted plasma nuclides beneath the substrate support assembly.

[0007] A more detailed description of the disclosure, which is briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings, so that the above-mentioned features of the disclosure can be understood in detail. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered limiting in scope, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0008] [Figure 1A] A schematic cross-sectional view of an exemplary processing chamber according to one embodiment of the present disclosure. [Figure 1B] A schematic cross-sectional view of an exemplary processing chamber according to one embodiment of the present disclosure. [Figure 2] Flowchart of the method according to one embodiment described herein [Modes for carrying out the invention]

[0009] For ease of understanding, the same reference numeral is used to indicate identical elements common to the drawings, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0010] This disclosure relates to a system and method for reducing the formation of hardware residues and minimizing the formation of secondary plasma during substrate processing in a processing chamber. The processing chamber may include a gas distribution member configured to flow a first gas into a processing volume and generate plasma from there. A second gas is supplied to the lower region of the processing volume to reduce the deviation and dispersion of the plasma, reduce the presence of active radical species beneath the wafer surface, and actively clean the lower region. Furthermore, an exhaust port is located in the lower region to remove excess gas or by-products from the processing volume during or after processing.

[0011] Figure 1A is a schematic cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 may be a plasma chemical vapor deposition (PECVD) chamber suitable for depositing chemical vapor deposition (CVD) films on a substrate such as a substrate 154. Examples of processing chambers that can be adapted to obtain the benefits described herein include the PRODUCER® CVD processing apparatus and PRECISION® processing apparatus, commercially available from Applied Materials, Inc., Santa Clara, California, USA. Other appropriately configured processing chambers, including those from other manufacturers or for other applications, can also be used according to the embodiments described herein. For example, the embodiments described herein can be used to benefit, among other things, etching chambers, ion implantation chambers, and stripping chambers.

[0012] The processing chamber 100 can be used for a variety of plasma processes, including deposition and removal processes. In one embodiment, the processing chamber 100 is used to perform CVD using one or more precursor gases, with or without a radio frequency (RF) power supply. In another embodiment, the processing chamber 100 is used for a PECVD process.

[0013] The processing chamber includes a chamber body 102 having side walls 106 and a chamber bottom 108 that at least partially define the processing volume 120. The processing chamber 100 further includes a lid assembly 110 and a substrate support assembly 104. The substrate support assembly 104 is positioned within the processing volume 120 and configured to support a substrate 154 on it during processing. The lid assembly 110 is coupled at its upper end to the chamber body 102 and surrounds the substrate support assembly 104 within the processing volume 120. The substrate 154 is transferred into the processing volume 120 through a slit valve opening 126 formed in the side wall 106. The slit valve opening 126 can be selectively opened and closed to allow access to the processing volume 120 by a substrate transfer robot (not shown) for transferring the substrate. In some embodiments, one or more process gases and cleaning gases may be introduced into the processing volume through the slit valve opening 126.

[0014] The electrode 109 is positioned adjacent to the chamber body 102 to isolate the chamber body 102 from other components of the lid assembly 110. The electrode 109 may be part of the lid assembly 110 or it may be a separate sidewall electrode. An isolator 107, which may be formed from a ceramic material or a metal oxide material, such as a dielectric material such as aluminum oxide and / or aluminum nitride, is in contact with the electrode 109 to electrically and thermally isolate the electrode 109 from other components of the lid assembly 110 and the chamber body 102. In one embodiment, the electrode 109 is sandwiched between opposing isolators 107 such that the isolators 107 are in contact with the sidewall 106 and the lid assembly 110.

[0015] The lid assembly 110 includes a gas distribution member 112 having a plurality of openings 118 for introducing one or more process gases, precursors, or cleaning gases into the processing volume 120. The gas is supplied from a first gas source 111 to the processing chamber 100 via a conduit 114, and the gas is introduced into a mixed plenum 116 before flowing into the processing volume 120 through the openings 118. In one example, one or more inert gases, such as argon, nitrogen, oxygen, and helium, are introduced into the processing volume 120 during the deposition or cleaning process. Other suitable examples of precursor gases that can be introduced into the processing volume 120 during deposition include propene, ammonia, tetraethyl orthosilicate, and silane. These one or more gases are introduced into the processing volume 120 at a total flow rate between about 1,000 standard cubic centimeters / minute (sccm) and about 20,000 sccm, for example between about 5,000 sccm and about 15,000 sccm, for example, with a total flow rate of about 10,000 sccm.

[0016] The gas distribution member 112 is further coupled to a power supply 142, such as a radio frequency (RF) power supply configured to provide power to the gas distribution member 112. In one embodiment, continuous or pulsed RF power is used to form plasma in the processing volume 120. In another embodiment, continuous or pulsed DC power is used to form plasma in the processing volume 120. The power supply 142 provides power between approximately 100 watts and approximately 3000 watts at a frequency between approximately 50 kHz and approximately 13.6 MHz.

[0017] During operation, a process gas or precursor is supplied from a first gas source 111 to the processing volume 120 and flows through a plurality of openings 118 of the gas distribution member 112. The process gas or precursor is activated by RF power supplied to the gas distribution member 112 by a power supply 142, forming plasma in the processing volume 120. The plasma forms a film on the substrate 154 supported by the substrate support assembly 104, or etches a film from the substrate 154.

[0018] The substrate support assembly 104 is formed from a metallic or ceramic material, such as a metal oxide material, a metal nitride material, a metal oxynitride material, or any combination thereof. For example, the substrate support assembly 104 is formed from an aluminum-containing material, an aluminum nitride-containing material, an aluminum oxide-containing material, or an aluminum oxynitride-containing material. The substrate support assembly 104 includes a substrate support surface 180 located on its first surface, which is parallel to a second surface of the substrate support assembly 104 and faces the lid assembly 110. The substrate support surface 180 is configured to directly support the substrate 154 during processing. The substrate support assembly 104 is coupled to a lift mechanism 147 through a shaft 144 extending through an opening 146 in the chamber bottom 108. The lift mechanism 147 allows the substrate support surface 180 to move vertically through the processing volume 120 between a lower transfer position and one or more elevated processing positions.

[0019] An electrostatic chuck (ESC) 130 is placed on the substrate support assembly 104. The electrostatic chuck 130 includes one or more electrodes 122. The electrodes may be plates, perforated plates, meshes, wire screens, or any other distributed arrangement. One or more electrodes 122 are coupled to an electrode power supply 124 to provide power to the electrodes 122, facilitating the chucking of the substrate 154 onto the substrate support surface 180 during processing of the substrate 154. In one embodiment, the electrode power supply 124 applies a DC voltage to the electrodes 122 for chucking. The electrode power supply 124 can generate either continuous or pulsed power, or both.

[0020] In some embodiments, which can be combined with other embodiments, the substrate support assembly 104 includes an additional electrode (not shown) for use in combination with electrode 109 to generate plasma during processing of the substrate 154. The use of electrode 109 and the additional electrode, which are positioned in or near the substrate support assembly 104 to generate plasma, can have various embodiments. For example, an RF field can be generated by driving at least one of electrode 109 and the additional electrode with a drive signal to facilitate the formation of a capacitive plasma in the processing volume 120. In one embodiment, the additional electrode is used in combination with electrode 109 to bias the plasma in the processing volume 120. Electrode power supply 124 provides electrode 122 or the additional electrode with RF power up to approximately 1000W at a frequency of approximately 13.56MHz. However, it is assumed that other frequencies and power may be provided depending on the application. For example, electrode power supply 124 may provide multiple frequencies such as 13.56MHz and 2MHz.

[0021] The substrate support assembly 104 further includes a heater device 140 located therein and coupled to a heater power supply 148. The heater device 140 is used to heat the substrate 154 and can incidentally heat the processing volume 120 during processing of the substrate 154. In one embodiment, the heater device 140 is a resistive heater. In another embodiment, the heater device 140 is a channel adapted to receive a flow of a heating or cooling fluid such as air, nitrogen, helium, water, or glycol and conduct heat through it to the substrate 154.

[0022] One or more gas introduction ports 162 are positioned through the chamber body 102 below the substrate support assembly 104 and are coupled to a second gas source 113. In one embodiment, one or more gas introduction ports 162 are formed through a side wall 106 adjacent to the lower region 150 of the processing volume 120. In another embodiment, one or more gas introduction ports 162 are formed through a chamber bottom 108 separate from the opening 146, as shown in Figure 1A. In yet another embodiment, the opening 146 itself functions as a gas introduction port that can be used instead of, or in combination with, one or more gas introduction ports 162.

[0023] The second gas source 113 supplies one or more process gases, precursors, cleaning gases, or barrier gases to the lower region 150 of the processing volume 120 via the gas introduction port 162 and / or opening 146. Alternatively or additionally, one or more gases may be supplied to the lower region 150 via the slit valve opening 126. The second gas source 113 controls the type of gas and the flow rate of the gas to the processing volume 120, and more specifically to the lower region 150. In one embodiment, the second gas source 113 supplies a purge gas to the lower region 150. The purge gas may be an inert gas. In addition, the purge gas may be formed from nuclides that have relatively low reactivity (e.g., non-reactive nuclides) compared to the gas supplied by the first gas source 111, and have a dissociation energy greater than that of diatomic argon. For example, the purge gas may be about 4.73 kJ mol-1 It can be formed from nuclides having dissociation energies exceeding a certain level. For example, the purge gas can be formed from helium, argon, oxygen, nitrogen, hydrogen, ammonia, or any combination thereof. In such examples, the ionization of the second gas in the lower region 150 is mitigated or prevented.

[0024] The exhaust port 152 is fluidly connected to the processing volume 120 and extends through the chamber body 102. In one embodiment, the exhaust port 152 is disposed through the side wall 106. The exhaust port 152 can be an annular pump channel surrounding the processing volume 120 or a non-annular pump port adjacent to the processing volume 120. In another embodiment, the exhaust port 152 is disposed through the chamber bottom 108. The exhaust port 152 is coupled to a vacuum pump 156 to remove excess process gas or by-products from the processing volume 120 during or after the processing of the substrate 154.

[0025] During operation, process gas or purge gas is supplied from the second gas source 113 to the lower region 150 below the substrate support assembly 104 through the gas introduction port 162, the opening 146, and / or the slit valve opening 126. As the process gas or purge gas is supplied to the lower region 150 by the second gas source 113, a plasma is formed above the substrate support assembly 104 to deposit one or more films on the substrate 154. Thus, the first gas source 111 and the second gas source 113 supply gas to the processing volume 120 simultaneously, although from different regions of the processing chamber 100.

[0026] In certain embodiments that can be combined with other embodiments, the gas species supplied by the second gas source 113 reacts with the activated plasma species to form by-products, which are discharged through the exhaust port 152. This can occur, for example, when the activated plasma species diffuse into the lower region 150 or when the second gas diffuses into the upper region of the process region 150. In certain embodiments, the gas species supplied by the second gas source 113 has no (or only minimal) reactivity with the activated plasma species, but rather dilutes the activated plasma species in the processing volume 120 (or the lower region 150) before being discharged through the exhaust port 152. In such an example, the dilution reduces unwanted deposition in the lower region 150.

[0027] Figure 1B is a schematic cross-sectional view of a processing chamber 100 according to another embodiment. The processing chamber 100 shown in Figure 1B is substantially similar to the embodiment described above, but further includes a radiation shield 182 positioned beneath the substrate support assembly 104. The radiation shield 182 is used to modulate radiant heat loss at the bottom surface of the substrate support assembly 104 and to compensate for temperature non-uniformity of the substrate support assembly 104 and, consequently, the substrate 154 positioned thereon.

[0028] The radiation shield 182 includes a radiation shaft 184 and a radiation plate 186. The radiation shaft 184 is a tubular or cylindrical member surrounding the shaft 144. A space 176 is formed between the radiation shaft 184 and the shaft 144, through which one or more gases supplied from the second gas source 113 can flow. The radiation shaft 184 further supports the radiation plate 186 and is formed of any material suitable for substrate processing, such as quartz.

[0029] The radiation plate 186 is a planar, disc-shaped plate having substantially the same lateral dimensions as the substrate support assembly 104. For example, the radiation plate 186 has substantially the same diameter as the substrate support assembly 104. The radiation plate includes a central hole through which the shaft 144 extends. The radiation plate 186 may further include one or more holes positioned radially outward from the shaft 144 to allow a lift pin (not shown) to actuate through it. In one embodiment, the radiation plate 186 is formed of an aluminum oxide material or an aluminum nitride material.

[0030] During operation, the radiation shield 182 can guide one or more gases supplied from the second gas source 113 through the space 176, along the bottom surface of the substrate support assembly 104, toward the side wall 106. For example, the radiation shield 182 can control the flow of one or more gases so that they flow radially outward along the bottom surface of the substrate support assembly 104, toward the side wall 106, in a flow path substantially parallel to the substrate support assembly 104. Thus, radially outward flowing gases can form a gas curtain between the lower region 150 and the rest of the processing volume 120 substantially parallel to the substrate support assembly 104. The radiation shield 182 can be used instead of, or in combination with, the gas introduction port 162 and / or slit valve opening 126 to introduce gas into the processing volume 120, such as the lower region 150.

[0031] As discussed herein, the film deposition operation may include the formation of one or more films on a substrate 154 positioned on a substrate support assembly 104. Figure 2 shows a flowchart of a method 200 for processing a substrate according to one or more embodiments. Using method 200, one or more films can be formed on the substrate 154.

[0032] In operation 210, plasma is generated within the processing volume 120 of the processing chamber 100. For example, a first gas is introduced into the processing volume 120 from a first gas source 111 via a conduit 114. The first gas is introduced into the processing volume at a flow rate between approximately 1000 sccm and approximately 20000 sccm, for example, between approximately 8000 sccm and approximately 12000 sccm. The first gas includes at least a process gas, a precursor gas, an ionizable gas, or a carrier gas, which are activated within the processing volume 120 to form plasma. For example, a power supply 142 provides RF power, such as continuous or pulsed RF power, to the gas distribution member 112 to activate the first gas into plasma. Furthermore, the first gas is used to form a film on the substrate 154 in the presence of the plasma.

[0033] In operation 220, as the plasma is generated on the substrate support assembly 104, a second gas is introduced into the lower region 150 below the substrate support assembly 104. For example, the second gas is introduced into the lower region 150 from a second gas source 113 through one or more gas introduction ports 162 formed in the side wall 106 and / or the chamber bottom 108. In another example, the second gas is introduced into the lower region 150 through an opening 146 between the shaft 144 and the chamber bottom 108. In yet another example, the second gas is introduced into the lower region 150 through a space 176 between the radiation shaft 184 and the shaft 144. The second gas is a non-reactive gas or a gas with relatively low reactivity and can be formed from a nuclide with a dissociation energy greater than that of diatomic argon. For example, the second gas is oxygen. Alternatively or additionally, the second gas may be, among other things, one of hydrogen, helium, argon, or ammonia.

[0034] The second gas is introduced simultaneously with the first gas into the processing volume 120 and acts as a barrier curtain, reducing the amount of diverted dispersion of plasma and unreacted nuclides throughout the processing chamber 100, particularly into the lower region 150. For example, the second gas, such as argon or nitrogen, acts as a dispersion trap, localizing the plasma and unreacted nuclides on the substrate support assembly 104 and reducing diffusion (e.g., migration) elsewhere. The reduction in diverted dispersion then reduces the formation of residues on chamber components, such as components in the lower region 150 (e.g., below the substrate support assembly 104). In certain embodiments, the low reactivity of the second gas allows it to function as a trap without interacting with or mixing with the plasma. Furthermore, the low reactivity of the second gas facilitates the reduction of active plasma species present in the lower region 150, and thus reduces the deposition of chamber residues formed by parasitic plasma below the substrate support assembly 104.

[0035] In another capability, the second gas can function as a purging or cleaning gas, assisting in the removal of excess process gas or by-products from the processing volume 120 during or after processing via the exhaust port 152. For example, the second gas can promote the spontaneous combustion of unreacted process gases moving beneath the substrate support assembly 104. For example, in embodiments where oxygen is used as the second gas, the oxygen gas can promote a spontaneous combustion reaction that consumes unreacted hydrocarbons, such as C3H6, dispersed beneath the substrate support assembly 104, resulting in CO2 and H2O gases that can then be removed via the exhaust port 152. Thus, the second gas can actively clean the lower region of the processing volume 120 as the film is simultaneously deposited on the substrate 154.

[0036] In certain embodiments, which can be combined with other embodiments, a second gas is provided to the lower processing area 150 to actively induce a reaction between the second gas and any of the first gases (e.g., activated radionuclides) in the lower processing area 150, while simultaneously providing a barrier against the first gas entering the lower processing area 150. The first and second gases react to form gaseous byproducts, which can be discharged from the processing chamber 100 to reduce or avoid material deposition in the lower processing area 150 of the processing volume 120. In such examples, the second gas may be a reactive gas (e.g., a gas that reacts with excess precursor material). For example, the first gas process may be a hydrocarbon, while the second gas is oxygen or ozone. In such examples, the reaction between the first and second gases is a combustion reaction. The combustion reaction may occur in the lower processing area 150. In one example, the combustion reaction does not occur, or occurs only minimally, in the processing volume 120 on the substrate 154.

[0037] The flow rate and type of the second gas can be based on the flow rate of the first gas, the nuclide of the first gas, the amount of plasma generated, the properties of the film being deposited, the amount of the first gas reacting with the second gas, and / or the amount of plasma dispersion to be prevented. For example, the second gas flows into the processing volume 120 to dilute the first gas, such that the second gas accounts for more than about 25% of the total gas flow rate of the processing volume 120. For example, the second gas accounts for more than about 30% of the total flow rate of the processing volume 120, such as about 40% of the total flow rate. In certain embodiments, the flow rate of the second gas is determined based on the concentration of the second gas species (e.g., nitrogen or oxygen) in the film being deposited. In some embodiments, the flow rate of the second gas is different from the flow rate of the first gas. For example, the ratio of the flow rate of the first gas to the flow rate of the second gas is between about 0.5 and about 3. For example, the ratio of the flow rate of the first gas to the flow rate of the second gas is between about 1 and about 2. In one embodiment, the second gas flows into the processing volume 120 at a flow rate between approximately 50 standard cubic centimeters / minute and approximately 5000 sccm, for example, between approximately 500 sccm and approximately 4000 sccm. For example, the second gas flows into the processing volume 120 at a flow rate between approximately 1000 sccm and approximately 3000 sccm, for example, between approximately 2000 sccm.

[0038] In operation 230, the plasma and the second gas are discharged from the processing chamber 100 through the exhaust port 152. For example, the exhaust port 152 can be coupled to a vacuum pump 156, which can remove excess process gas or by-products from the processing volume 120 during or after processing the substrate 154.

[0039] By utilizing the systems and methods described above, many improvements can be made to substrate processing operations. In particular, the methods described above provide a precautionary approach to reduce or eliminate undesirable formation and accumulation of residues on processing chamber components by reducing the erroneous dispersion of plasma species and active plasma species beneath the substrate support. Thus, the occurrence of defects in films formed by the plasma process and the cleaning time between plasma processing operations are reduced, resulting in improved overall production throughput and reduced manufacturing costs. The methods disclosed herein are particularly advantageous in the deposition of carbon hard masks or carbon-based hard masks. The methods herein offer several advantages for reducing undesirable deposition, including providing a gas barrier at the gas / activated nuclide interface of the substrate support surface to mitigate activated precursor species in the lower region of the processing chamber. In addition, the methods herein promote undesirable deposition by inducing combustion reactions. Furthermore, the methods herein promote undesirable deposition by diluting reactive nuclides in the lower region of the processing chamber.

[0040] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A method for forming a film, To introduce the first gas into the processing volume of the processing chamber at a first flow rate, Generating plasma from the first gas and forming a film on a substrate placed on a substrate support assembly, and Introducing a second gas into the processing volume at a second flow rate, wherein the second gas is introduced into the lower region of the processing volume through the space between the substrate support assembly and the radiation shield, located beneath the substrate support assembly, and the ratio of the first flow rate to the second flow rate is between 0.5 and 3. Includes, A method wherein the second gas provides a barrier to prevent the dispersion of the plasma under the substrate support assembly.

2. The method according to claim 1, wherein the substrate support assembly is coupled to a lift mechanism through a shaft.

3. The method according to claim 2, wherein the radiation shield includes a radiation shaft and a radiation plate, the radiation shaft surrounding the shaft, and the radiation plate being a planar, disc-shaped plate including a hole through which the shaft extends.

4. The method according to claim 1, wherein the second gas is selected from the group consisting of argon, ammonia, helium, hydrogen, and oxygen.

5. The method according to claim 1, further introducing the second gas into the lower region of the processing volume through an opening in the side wall of the processing chamber, which is located beneath the substrate support assembly.

6. The method according to claim 5, wherein the second gas reacts with the first gas in the lower region of the processing volume to form a reaction byproduct, and the reaction byproduct is discharged from the processing chamber.

7. The second gas promotes the spontaneous combustion reaction, dispersing unreacted C beneath the substrate support assembly. ３ H ６ The method according to claim 6, wherein the consuming .

8. The method according to claim 1, wherein the second gas is introduced into the processing volume simultaneously with the first gas and accounts for more than 25% of the total gas flow rate of the processing volume.

9. The method according to claim 1, wherein the second gas flows into the processing volume at a flow rate between 500 sccm and 4000 sccm.

10. A method for forming a film, To introduce the first gas into the processing volume of the processing chamber at a first flow rate, Generating plasma from the first gas and forming a film on a substrate placed on a substrate support assembly, and Introducing a second gas into the processing volume at a second flow rate, wherein the second gas is introduced into the lower region of the processing volume through the space between the substrate support assembly and the radiation shield, located beneath the substrate support assembly, and the second flow rate accounts for 40% of the total flow rate of the processing chamber. Includes, A method wherein the second gas provides a barrier to prevent the dispersion of the plasma under the substrate support assembly.

11. The method according to claim 10, wherein the second gas is selected from the group consisting of argon, ammonia, helium, hydrogen, and oxygen.

12. The method according to claim 11, wherein the second gas is introduced into the processing volume simultaneously with the first gas.

13. The method according to claim 10, wherein the ratio of the flow rate of the first gas to the flow rate of the second gas is between 1 and 2.

14. A method for forming a film, To introduce a first process gas into the processing volume of the processing chamber at a first flow rate, Generating plasma from the first process gas and forming a film on a substrate placed on a substrate support assembly, and Introducing oxygen into the processing volume at a second flow rate, wherein the oxygen is introduced into the lower region of the processing volume from an opening in the side wall of the processing chamber located beneath the substrate support assembly and the space between the substrate support assembly and the radiation shield, the ratio of the first flow rate to the second flow rate is between 0.5 and 3, the second flow rate accounts for at least 40% of the total flow rate of the processing chamber, and the oxygen promotes a spontaneous combustion reaction, consuming unreacted nuclides in the plasma beneath the substrate support assembly. Includes, A method wherein the oxygen introduced through the space between the substrate support assembly and the radiation shield provides a barrier to prevent the dispersion of the plasma beneath the substrate support assembly.

15. The method according to claim 1, wherein the second gas does not react under the processing conditions.

16. The method according to claim 10, wherein the second gas is further introduced into the lower region of the processing volume through an opening in the side wall of the processing chamber, which is located beneath the substrate support assembly.

17. The method according to claim 16, wherein the second gas reacts with the first gas in the lower region of the processing volume to form a reaction byproduct, and the reaction byproduct is discharged from the processing chamber.

18. The method according to claim 16, wherein the second gas is introduced into the processing volume from the space between the substrate support assembly and the radiation shield and from the opening in the side wall of the processing chamber.

19. A method for forming a film, Transferring a substrate into the processing volume of a processing chamber through a slit valve opening, wherein the substrate is transferred onto a substrate support assembly; To introduce a first gas into the processing volume of the processing chamber at a first flow rate through the lid assembly of the processing chamber, which includes a gas distribution member having a plurality of openings. Generating plasma from the first gas and forming a film on the substrate placed on the substrate support assembly, and Introducing a second gas into the processing volume at a second flow rate, wherein the second gas is introduced into the lower region of the processing volume via a gas introduction port located in the side wall of the processing chamber, separate from the slit valve opening, and located below the substrate support assembly, and the second gas is introduced into the processing volume simultaneously with the first gas, and the ratio of the first flow rate to the second flow rate is between 0.5 and 3. Includes, A method comprising the second gas reacting with the first gas in the lower region of the processing volume to form a reaction byproduct, the reaction byproduct being discharged from the processing chamber.

20. The method according to claim 19, wherein the second gas is selected from the group consisting of oxygen and ozone.

21. The method according to claim 19, wherein the second gas provides a barrier to prevent the dispersion of the plasma under the substrate support assembly.

22. Introducing the first gas into the processing volume of the processing chamber and generating plasma from the first gas is necessary to remove unreacted C under the substrate support assembly. ３ H ６ This results in dispersion, and the second gas promotes the spontaneous combustion reaction, dispersing unreacted C under the substrate support assembly. ３ H ６ The method according to claim 19, wherein the consuming .

23. The method according to claim 19, wherein the second gas accounts for more than 25% of the total gas flow rate of the processing volume.

24. The method according to claim 19, wherein the second gas flows into the processing volume at a flow rate between 500 sccm and 4000 sccm.

25. A method for forming a film, Transferring a substrate into the processing volume of a processing chamber via a slit valve opening, wherein the substrate is transferred onto a substrate support assembly positioned through a first opening at the bottom of the processing chamber. To introduce a first gas into the processing volume of the processing chamber at a first flow rate through the lid assembly of the processing chamber, which includes a gas distribution member having a plurality of openings. Generating plasma from the first gas and forming a film on the substrate placed on the substrate support assembly, and The method involves introducing a second gas into the processing volume at a second flow rate, wherein the second gas is introduced into the lower region of the processing volume from an opening in the side wall of the processing chamber located beneath the substrate support assembly and the space between the substrate support assembly and the radiation shield, the second gas is introduced into the processing volume simultaneously with the first gas, and the second flow rate accounts for 40% of the total flow rate of the processing chamber. Methods that include...

26. The method according to claim 25, wherein the second gas is selected from the group consisting of argon, ammonia, helium, hydrogen, and oxygen.

27. The method according to claim 25, wherein the second gas is also introduced into the processing volume from the second opening at the bottom of the chamber.

28. The method according to claim 25, wherein the ratio of the flow rate of the first gas to the flow rate of the second gas is between 1 and 2.

29. Introducing the first gas into the processing volume of the processing chamber and generating plasma from the first gas result in the dispersion of unreacted C under the substrate support assembly. ３ H ６ The method according to claim 25, wherein the second gas promotes a self - combustion reaction to consume the unreacted C dispersed under the substrate support assembly. ３ H ６ ​

30. A method for forming a film, Transferring a substrate into the processing volume of a processing chamber via the slit valve opening of the processing chamber, wherein the substrate is transferred onto a substrate support assembly; A first process gas is introduced into the processing volume of the processing chamber at a first flow rate through the lid assembly of the processing chamber, which includes a gas distribution member having a plurality of openings. To generate plasma from the first process gas and form a film on the substrate placed on the substrate support assembly, Introducing oxygen into the processing volume at a second flow rate, wherein the oxygen is introduced into the lower region of the processing volume from an opening in the side wall of the processing chamber located beneath the substrate support assembly and the space between the substrate support assembly and the radiation shield, the oxygen is introduced into the processing volume simultaneously with the first process gas, the ratio of the first flow rate to the second flow rate is between 0.5 and 3, the second flow rate accounts for at least 40% of the total flow rate of the processing chamber, and the oxygen promotes a spontaneous combustion reaction of unreacted C in the plasma beneath the substrate support assembly. ３ H ６ Consuming seeds, introducing oxygen, and Discharge the processing volume through the annular pump channel of the processing chamber. Methods that include...

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