Thin film deposition apparatus and semiconductor device manufacturing method

Abstract

To provide a film formation system capable of preciously detecting a state in a chamber for housing a substrate, and a method of manufacturing a semiconductor device.SOLUTION: A film formation system of an embodiment comprises a chamber for housing a substrate, a stage for supporting the substrate, and a gas supply section for supplying a gas into the chamber to form a film on the substrate. The system further comprises a first detection section that detects a first value which varies depending on a pressure at a first point above the stage in the chamber, and a control section that controls a process of forming the film on the substrate based on the first value.SELECTED DRAWING: Figure 1

Description

Technical Field

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[0001] Embodiments of the present invention relate to a film forming apparatus and a method for manufacturing a semiconductor device.

Background Art

[0002] When forming a film on a substrate by a film forming apparatus such as a CVD (Chemical Vapor Deposition) apparatus, it is desirable to accurately detect the state inside the chamber that houses the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0007] Embodiments of the present invention will now be described with reference to the drawings. In Figures 1 to 6, identical components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0008] (First Embodiment) Figure 1 is a schematic diagram showing the configuration of a CVD apparatus according to the first embodiment. The CVD apparatus in Figure 1 is, for example, an ALD (Atomic Layer Deposition) apparatus. The CVD apparatus in Figure 1 is an example of a film deposition apparatus.

[0009] The CVD apparatus of this embodiment includes a chamber 11, a stage 12, a rotating shaft 13, a gas supply unit 14, gas piping 15, a shower head 16, an exhaust ring 17, a valve 18, a pump 19, a pressure gauge 21, a control unit 22, and a height adjustment unit 23. The stage 12 includes a lower plate 12a, an upper plate 12b, and one or more piezoelectric elements 12c. The gas supply unit 14 includes a plurality of MFCs (Mass Flow Controllers) 14a, 14b, 14c, 14d, and 14e. The lower plate 12a is an example of a first member, and the upper plate 12b is an example of a second member. The piezoelectric element 12c is an example of a first detection unit, and the pressure gauge 21 is an example of a second detection unit.

[0010] Figure 1 shows the X, Y, and Z directions perpendicular to each other. In this specification, the +Z direction is treated as the upward direction, and the -Z direction is treated as the downward direction. The -Z direction may or may not coincide with the direction of gravity.

[0011] Chamber 11 houses the wafer 1. The wafer 1 shown in Figure 1 includes a substrate 1a and a film 1b. The substrate 1a is, for example, a semiconductor substrate such as a Si (silicon) substrate. The film 1b is, for example, a CVD film formed on the substrate 1a by the CVD apparatus of this embodiment. The film 1b of this embodiment is a metal film containing a metal element and oxygen, for example, an IGZO film containing In (indium), Ga (gallium), Zn (zinc), and O (oxygen). In this embodiment, the wafer 1 including the substrate 1a is loaded into the chamber 11, the film 1b is formed on the substrate 1a by CVD in the chamber 11, and the wafer 1 including the substrate 1a and the film 1b is discharged from the chamber 11. In this embodiment, various processes such as forming the film 1b on the substrate 1a are performed, and then the wafer 1 is divided into multiple chips (dicing) to manufacture multiple semiconductor devices from the wafer 1.

[0012] The stage 12 supports the wafer 1 in the chamber 11. The stage 12 includes a lower plate 12a, one or more piezoelectric elements 12c provided on the lower plate 12a, and an upper plate 12b provided on these piezoelectric elements 12c and supporting the wafer 1. In Figure 1, the wafer 1 is placed on the upper surface of the upper plate 12b. Each piezoelectric element 12c detects the pressure applied to it and outputs an electrical signal that changes according to that pressure. In this embodiment, each piezoelectric element 12c detects the pressure difference between the pressure at a location above the stage 12 in the chamber 11 and the pressure at a location below the stage 12 in the chamber 11. The former location is an example of a first location, the latter location is an example of a second location, and the above pressure difference is an example of a first value. Further details of the piezoelectric elements 12c will be described later.

[0013] The rotating shaft 13 is attached to the lower plate 12a of the stage 12 and supports the stage 12. The rotating shaft 13 can rotate the wafer 1 on the stage 12 by rotating the stage 12 as shown by arrow A2.

[0014] The gas supply unit 14 supplies gas into the chamber 11. This allows a film 1b to be formed on the substrate 1a using this gas. In this embodiment, the gas supply unit 14 supplies In gas containing In, Ga gas containing Ga, Zn gas containing Zn, O gas containing O, and a diluent gas. This allows an IGZO film to be formed as film 1b. In gas, Ga gas, and Zn gas are examples of first gases, and O gas is an example of a second gas. O gas is, for example, O3 (ozone) gas. The diluent gas is, for example, a noble gas. MFCs 14a to 14e in the gas supply unit 14 measure and control the flow rates of In gas, Ga gas, Zn gas, O gas, and diluent gas, respectively.

[0015] The gas piping 15 connects the gas supply unit 14 and the shower head 16, supplying gas from the gas supply unit 14 to the shower head 16.

[0016] The showerhead 16 supplies gas from the gas piping 15 into the chamber 11. As shown in Figure 1, the showerhead 16 is positioned above the stage 12 inside the chamber 11. Therefore, the gas sprayed from the showerhead 16 reaches the upper surface of the substrate 1a on the stage 12. As a result, a film 1b is formed on the upper surface of the substrate 1a.

[0017] The exhaust ring 17 is attached to the side wall of the chamber 11 and discharges the gas inside the chamber 11. The exhaust ring 17 is connected to the pump 19 via a valve 18. When the pump 19 operates with the valve 18 open, the gas inside the chamber 11 is discharged to the exhaust ring 17.

[0018] The pressure gauge 21 detects the pressure inside the chamber 11. The pressure gauge 21 of the present embodiment detects the pressure at a location below the stage 12 inside the chamber 11 and outputs a signal indicating the detection result of the pressure. As described above, this location is an example of the second location. Also, the above pressure is an example of the second value.

[0019] The control unit 22 controls various operations of the CVD apparatus of the present embodiment. For example, the control unit 22 receives the above electrical signal from each piezo element 12c and obtains the pressure difference ΔP between the pressure Pa at a location above the stage 12 and the pressure Pb at a location below the stage 12 from this electrical signal. Also, the control unit 22 receives the above signal from the pressure gauge 21 and obtains the pressure Pb at a location below the stage 12 from this signal. The control unit 22 of the present embodiment calculates the pressure Pa at a location above the stage 12 based on the obtained pressure difference ΔP and pressure Pb, and controls the process of forming the film 1b on the substrate 1a (film formation process) based on the calculated pressure Pa. For example, the control unit 22 controls the height of the stage 12 to a suitable height when forming the film 1b on the substrate 1a based on the calculated pressure Pa. Thereby, it becomes possible to form a suitable film 1b on the substrate 1a. Note that the control unit 22 may control the film formation process based on the obtained pressure difference ΔP and pressure Pb without calculating the pressure Pa.

[0020] The height adjustment unit 23 is attached to the lower plate 12a of the stage 12 and adjusts the height of the stage 12. The height adjustment unit 23 can change the height of the wafer 1 on the stage 12 by changing the height of the stage 12 as shown by the arrow A1. The height of the stage 12 may be adjustable by the rotation shaft 13 instead of the height adjustment unit 23, or may be adjustable by the height adjustment unit 23 and the rotation shaft 13. The control unit 22 can control the height of the stage 12 by operating the height adjustment unit 23 and / or the rotation shaft 13.

[0021] Next, continuing to refer to FIG. 1, further details of the CVD apparatus of the present embodiment will be described.

[0022] Figure 1 shows regions R1, R2, and R3 within the chamber 11. Regions R1 and R2 are located roughly between the upper surface of the stage 12 and the lower surface of the showerhead 16. Region R3 is the remaining region within the chamber 11. Specifically, region R1 is located near the center of the stage 12 in a plan view, and region R2 is located near the outer perimeter of the stage 12 in a plan view. Regions R1 and R2 are located above the stage 12. Region R3, on the other hand, includes, for example, the area below the stage 12.

[0023] When forming a film 1b on the substrate 1a using gas from the gas supply unit 14, this gas is mainly supplied to the region between the shower head 16 and the stage 12. Therefore, the pressure in regions R1 and R2 is generally higher than the pressure in region R3. Furthermore, the pressure in region R1 is generally higher than the pressure in region R2. As a result, the pressure on the upper surface of the wafer 1 is higher than the pressure on the lower surface of the wafer 1. Each piezoelectric element 12c in this embodiment detects the pressure difference between the former pressure and the latter pressure. Specifically, each piezoelectric element 12c detects the pressure difference between region R1 (or R2) and region R3. On the other hand, the pressure gauge 21 detects the pressure in region R3.

[0024] The pressure within regions R1 and R2 affects the film quality and formation process of film 1b. Therefore, it is desirable to accurately detect the pressure within regions R1 and R2. However, if the pressure in chamber 11 is detected in region R3 by the pressure gauge 21, a lower pressure than the pressure in R1 and R2 will be detected. Furthermore, even if we try to detect the pressure in regions R1 and R2 using the pressure gauge 21, it is difficult to place the pressure gauge 21 within regions R1 and R2. For example, if the pressure gauge 21 is placed within regions R1 and R2, it becomes difficult to form film 1b on the substrate 1a near the pressure gauge 21.

[0025] Therefore, the CVD apparatus of this embodiment detects the pressure difference between region R1 and region R3 using each piezoelectric element 12c. This makes it possible to obtain information about the pressure in region R1 from the detection results of each piezoelectric element 12c. For example, it is possible to calculate the pressure in region R1 based on the detection result of the pressure difference between region R1 and region R3 and the detection result of the pressure in region R3. Each piezoelectric element 12c may also detect the pressure in region R2 instead of the pressure in region R1.

[0026] In this embodiment, the control unit 22 controls the height of the stage 12 based on the calculated pressure within region R1. The height of the stage 12 is controlled, for example, to maintain a constant pressure on the upper surface of the wafer 1. This makes it possible to form a film 1b on the substrate 1a under constant pressure. The height of the stage 12 may be determined based on any point on the stage 12. In this embodiment, the control unit 22 controls the height (Z coordinate) of the upper surface of the stage 12 based on the calculated pressure within region R1.

[0027] The film 1b in this embodiment is a metal film containing metal elements and oxygen, for example, an IGZO film containing In, Ga, Zn, and O. In this case, a problem arises in that the adsorption efficiency when forming a metal film from a gas containing metal elements is affected by the pressure in regions R1 and R2, and the magnitude of this effect differs depending on the type of metal element. According to this embodiment, it is possible to suppress such problems by maintaining a constant pressure on the upper surface of wafer 1.

[0028] When film 1b is formed by CVD such as ALD, the gas flow rate often changes significantly, which often leads to large changes in the pressure within regions R1 and R2. According to this embodiment, by maintaining a constant pressure on the upper surface of wafer 1, CVD can be suitably carried out. In addition, when performing CVD, a CVD film may be formed near the entrance of chamber 11 (loading effect). In this embodiment, the formation of such a CVD film may be reduced by maintaining the pressure on the upper surface of wafer 1 at a suitable pressure.

[0029] The control unit 22 may control something other than the height of the stage 12. For example, the control unit 22 may control the flow rate of gas supplied from the gas supply unit 14 based on the calculated pressure in the region R1. This makes it possible to maintain a constant pressure on the top surface of the wafer 1, similar to when the height of the stage 12 is controlled. However, controlling the pressure on the top surface of the wafer 1 by the height of the stage 12 is easier than controlling it by the gas flow rate. Also, increasing the pressure on the top surface of the wafer 1 by the gas flow rate increases the consumption of expensive gas. Therefore, it is generally preferable to control the pressure on the top surface of the wafer 1 by the height of the stage 12.

[0030] The detection of pressure differences by each piezoelectric element 12c may be performed while the film 1b is being formed on the substrate 1a, or it may be performed beforehand before the film 1b is formed on the substrate 1a. In the latter case, the film 1b is formed on the substrate 1a as a pre-processing step before the actual film 1b is formed on the substrate 1a. During the pre-processing step, each piezoelectric element 12c detects the pressure difference in each step. During the actual processing step, the control unit 22 controls the height of the stage 12 in each step based on the pressure difference detected during the pre-processing step. For example, the height of the stage 12 in steps A, B, and C of the actual processing step is controlled based on the pressure difference detection results in steps A, B, and C of the pre-processing step. The pressure difference detection results in the pre-processing step are stored in the storage of the control unit 22 for use during the actual processing step.

[0031] When employing such pretreatment, it is conceivable to perform the pretreatment through simulation. However, it is difficult to calculate the pressure changes inside chamber 11 through simulation. Therefore, it is preferable to actually perform the pretreatment in this embodiment using the CVD apparatus of this embodiment.

[0032] Figure 2 is a graph illustrating the operation of the CVD apparatus according to the first embodiment.

[0033] The horizontal axis of Figure 2 shows the flow rate of the dilution gas measured by the MFC14e. The vertical axis of Figure 2 shows the pressure of the dilution gas. Figure 2 shows the pressure of the dilution gas in the piping 15 and the pressure of the dilution gas in the chamber 11 (region R1) when the dilution gas is supplied from the gas supply unit 14 into the chamber 11.

[0034] As shown in Figure 2, it can be seen that as the flow rate of the dilution gas increases, the difference between the pressure of the dilution gas in the piping 15 and the pressure of the dilution gas in the chamber 11 increases. This indicates that if the value measured by the pressure gauge installed in the piping 15 is considered to be the pressure in the chamber 11, the error between the actual pressure in the chamber 11 and this measured value will increase. Therefore, it is difficult to accurately measure the pressure in the chamber 11 with the pressure gauge installed in the piping 15. This error increases as the flow rate of the dilution gas increases, and becomes particularly noticeable when the flow rate of the dilution gas exceeds 500 sccm. This is also true when supplying gases other than the dilution gas.

[0035] Therefore, the CVD apparatus of this embodiment measures the pressure in the chamber 11 (region R1) using the piezoelectric element 12c located within the chamber 11. This makes it possible to achieve highly accurate pressure measurement.

[0036] Figure 3 is a plan view illustrating the configuration of the CVD apparatus according to the first embodiment.

[0037] Figure 3(a) shows a first example of the stage 12 of this embodiment. In this example, the stage 12 includes one piezoelectric element 12c between the lower plate 12a and the upper plate 12b. This piezoelectric element 12c is positioned to coincide with the center C of the stage 12. In this case, the control unit 22 controls the height of the stage 12 based on the pressure difference detected by this piezoelectric element 12c.

[0038] Figure 3(b) shows a second example of the stage 12 of this embodiment. In this example, the stage 12 includes a plurality of piezoelectric elements 12c between the lower plate 12a and the upper plate 12b. These piezoelectric elements 12c are spaced apart from each other and detect pressure differences at different locations. In this case, the control unit 22 controls the height of the stage 12 based on the pressure differences detected by these piezoelectric elements 12c. For example, the height of the stage 12 is controlled based on the average or distribution of the pressure differences detected by these piezoelectric elements 12c. The average of the pressure differences may be a frequency average or a weighted average.

[0039] The piezoelectric element 12c in Figure 3(b) includes one piezoelectric element P1 positioned on the center C, four piezoelectric elements P2 positioned near the center C, and eight piezoelectric elements P3 positioned far from the center C. For example, the four piezoelectric elements P2 are arranged concentrically with respect to the center C, and the eight piezoelectric elements P3 are arranged concentrically with respect to the center C. The control unit 22 may, for example, control the height of the stage 12 based on the pressure difference detected by piezoelectric element P1, the average of the pressure differences detected by piezoelectric elements P2, and the average of the pressure differences detected by piezoelectric elements P3.

[0040] Figure 4 is a sequence diagram illustrating the operation of the CVD apparatus of the first embodiment. Figure 4 shows the time change in the height of the stage 12.

[0041] During period T1, the control unit 22 performs the startup operation of the CVD apparatus. During the startup operation, the height of the stage 12 is maintained at a constant height (standby state). Figure 4 shows the height of the stage 12 in the standby state with a dashed line.

[0042] During period T2, the control unit 22 performs a pre-sequence to investigate the correspondence between the pressure difference detected by the piezoelectric element 12c and the height of the stage 12. The pre-sequence may be performed by supplying gas to form a film 1b on the substrate 1a, or it may be performed simply by supplying gas. In the latter case, the pre-sequence may be performed by supplying only dilution gas. Figure 4 shows an example of a pre-sequence performed by supplying only dilution gas.

[0043] During period T3, the control unit 22 performs a sequence to form a film 1b on the substrate 1a. Period T3, as shown in Figure 4, sequentially includes periods of supplying In gas, dilution gas, O gas, and dilution gas. This forms layers containing In and O as part of film 1b. Similarly, the processing in period T3 is further carried out to sequentially include periods of supplying Ga gas, dilution gas, O gas, and dilution gas. This forms layers containing Ga and O as part of film 1b. Similarly, the processing in period T3 is further carried out to sequentially include periods of supplying Zn gas, dilution gas, O gas, and dilution gas. This forms layers containing Zn and O as part of film 1b. By repeatedly forming these layers alternately, an IGZO film is formed as film 1b.

[0044] During period T3, the control unit 22 controls the height of the stage 12 using the correspondence acquired during period T2. This makes it possible to control the height of the stage 12 to a suitable height when forming the film 1b on the substrate 1a, thereby enabling the formation of a suitable film 1b on the substrate 1a. When dilution gas is supplied during period T3 (purge period), the height of the stage 12 is returned to the standby height.

[0045] Figure 5 is another sequence diagram illustrating the operation of the CVD apparatus of the first embodiment.

[0046] Figure 5 shows the case where the film 1b is formed in period T3 without performing the pre-sequence in period T2 as shown in Figure 4. The supply of In gas is started at time Ta. When the supply of In gas is started, the control unit 22 gradually lowers the height of stage 12. In Figure 5, the height of stage 12 decreases from time Ta to time Tb, increases from time Tb to time Tc, and is then maintained at the optimal height. At time Td shown in Figure 5, the height of stage 12 has already reached the optimal height. Note that the height of stage 12 may change from the height at time Ta to the height at time Td without going through changes like those at times Tb and Tc.

[0047] After the supply of In gas is started, the control unit 22 determines the optimal height of the stage 12 based on the pressure difference detected by the piezoelectric element 12c and maintains the stage 12 at the optimal height. The supply of In gas and the adjustment of the stage height are performed in parallel.

[0048] The operation shown in Figure 5 is performed similarly when supplying Ga gas, Zn gas, and O gas. Figure 5 shows the change in the height of stage 12 when supplying O gas.

[0049] Furthermore, the sequence in Figure 5 may be performed during period T3 in Figure 4. In other words, the sequence in period T3 in Figure 5 may be performed after the pre-sequence in period T2. In addition to the pre-sequence, the height of stage 12 may be adjusted, for example, in parallel with the supply of In gas. This allows for more precise adjustment of the height of stage 12.

[0050] As described above, the CVD apparatus of this embodiment detects the pressure difference between the pressure above the stage 12 and the pressure below the stage 12 using each piezoelectric element 12c, and controls the process of forming a film 1b on the substrate 1a (film deposition process) based on the detected pressure difference. Therefore, according to this embodiment, it is possible to accurately detect the state inside the chamber 11, thereby enabling the formation of a suitable film 1b on the substrate 1a.

[0051] (Second and third embodiments) Figure 6 is a schematic diagram showing the configuration of the CVD apparatus in the second and third embodiments.

[0052] Figure 6(a) shows the stage 12 in the CVD apparatus of the second embodiment. The configuration of the CVD apparatus of this embodiment is the same as that of the CVD apparatus of the first embodiment. However, the stage 12 of this embodiment includes one or more elastic members 12d between the lower plate 12a and the upper plate 12b, instead of one or more piezoelectric elements 12c. The CVD apparatus of this embodiment also includes an optical sensor 31. The optical sensor 31 includes a light-emitting unit 31a, a light-receiving unit 31b, and a calculation unit 31c. The optical sensor 31 is an example of a first detection unit.

[0053] In the first embodiment, when the pressure in region R1 becomes higher than the pressure in region R3 (Figure 1), the pressure applied to each piezoelectric element 12c changes. The control unit 22 of the first embodiment can obtain the pressure difference between the pressure in region R1 and the pressure in region R3 from the electrical signals received from each piezoelectric element 12c. Based on the obtained pressure difference, the control unit 22 of the first embodiment controls the height of the stage 12.

[0054] On the other hand, in this embodiment, when the pressure in region R1 becomes higher than the pressure in region R3, the height of the stage 12 changes. This is because the width between the lower plate 12a and the upper plate 12b changes due to the action of the elastic member 12d. The optical sensor 31 optically detects the height of the stage 12 and outputs a signal indicating the detection result of the height of the stage 12. The control unit 22 in this embodiment can obtain the current height of the stage 12 from the signal received from the optical sensor 31. The control unit 22 in this embodiment controls the height of the stage 12 based on the obtained height. Alternatively, the optical sensor 31 or the control unit 22 may calculate the above-mentioned pressure difference from the height detected by the optical sensor 31, and the control unit 22 may use this pressure difference to perform control similar to that in the first embodiment.

[0055] In the optical sensor 31, the light-emitting unit 31a emits laser light onto the upper plate 12b. The laser light is reflected from the upper surface of the upper plate 12b. The light-receiving unit 31b receives the laser light reflected from the upper plate 12b. The calculation unit 31c calculates the height of the stage 12 based on the laser light reception result. The CVD apparatus of this embodiment may be equipped with multiple optical sensors 31 that detect the height of the stage 12 at multiple locations. Alternatively, the CVD apparatus of this embodiment may be equipped with one or more sensors that detect the height of the stage 12 in a non-optical manner.

[0056] Figure 6(b) shows the stage 12 in the CVD apparatus of the third embodiment. The configuration of the CVD apparatus in this embodiment is the same as that of the CVD apparatus in the second embodiment. However, the stage 12 in this embodiment includes a support member 12e between the lower plate 12a and the upper plate 12b, instead of one or more elastic members 12d.

[0057] In this embodiment, the upper plate 12b is provided on the support member 12e in a cantilevered manner. Therefore, when the pressure in region R1 becomes higher than the pressure in region R3, the height of the stage 12 changes locally due to the elastic action of the cantilever. The optical sensor 31 in this embodiment optically detects the height of the stage 12, similar to the second embodiment, and outputs a signal indicating the detected height of the stage 12. The subsequent processing is the same as in the second embodiment.

[0058] According to the second or third embodiment, similar to the first embodiment, it becomes possible to accurately detect the state inside the chamber 11, thereby enabling the formation of a suitable film 1b on the substrate 1a.

[0059] Furthermore, embodiments of the present invention may be implemented in the following ways.

[0060] (Note 1) A chamber for housing the circuit board, A stage that supports the substrate, A gas supply unit that supplies gas into the chamber to form a film on the substrate, A first detection unit that detects a first value that changes according to the pressure at a first location above the stage in the chamber, A control unit that controls the process of forming the film on the substrate based on the first value, A film deposition apparatus equipped with the following features.

[0061] (Note 2) The film deposition apparatus according to Appendix 1, wherein the control unit controls the height of the stage based on the first value.

[0062] (Note 3) The first location is located between the stage and a showerhead that supplies gas supplied from the gas supply unit into the chamber, as described in Appendix 1 of the film deposition apparatus.

[0063] (Note 4) The film deposition apparatus according to Appendix 1, wherein the first value changes according to the pressure at the first location and the pressure at a second location in the chamber that is different from the first location.

[0064] (Note 5) The second location is the film deposition apparatus described in Appendix 4, located below the stage within the chamber.

[0065] (Note 6) The system further includes a second detection unit that detects a second value that changes according to the pressure at the second location, The film-forming apparatus according to Appendix 4, wherein the control unit controls the process of forming the film on the substrate based on the first value and the second value.

[0066] (Note 7) The film deposition apparatus described in Appendix 4, wherein the first value is the pressure difference between the pressure at the first location and the pressure at the second location.

[0067] (Note 8) The second value is the pressure at the second location, as described in Appendix 6 of the film deposition apparatus.

[0068] (Note 9) The film deposition apparatus according to Appendix 7, wherein the first detection unit includes at least one piezoelectric element that detects the pressure difference and outputs an electrical signal that changes according to the pressure difference.

[0069] (Note 10) The film deposition apparatus according to Appendix 9, wherein the stage includes a first member, a piezoelectric element provided on the first member, and a second member provided on the piezoelectric element and supporting the substrate.

[0070] (Note 11) The film-forming apparatus according to Appendix 9, wherein the control unit controls the process of forming the film on the substrate based on a plurality of first values ​​detected at a plurality of first locations by a plurality of piezoelectric elements of the first detection unit.

[0071] (Note 12) The first detection unit optically detects the height of the stage, as described in Appendix 1 of the film deposition apparatus.

[0072] (Note 13) The film deposition apparatus according to Appendix 1, wherein the stage includes a first member, an elastic member provided on the first member, and a second member provided on the elastic member and supporting the substrate.

[0073] (Note 14) The film deposition apparatus according to Appendix 1, wherein the stage includes a first member, a support member provided on the first member, and a second member provided on the support member in a cantilever configuration to support the substrate.

[0074] (Note 15) The film-forming apparatus according to Appendix 1, wherein the gas supply unit supplies a first gas containing a metal element and a second gas containing oxygen to form the film containing the metal element and oxygen.

[0075] (Note 16) The semiconductor substrate is housed in the chamber. The semiconductor substrate is supported by a stage, The first detection unit detects a first value that changes according to the pressure at a first location above the stage in the chamber, The control unit controls the process of supplying gas from the gas supply unit into the chamber and forming a film on the semiconductor substrate based on the first value. A method for manufacturing a semiconductor device, including the following.

[0076] (Note 17) The method for manufacturing a semiconductor device according to Appendix 16, wherein the first value changes in accordance with the pressure at the first location and the pressure at a second location in the chamber that is different from the first location.

[0077] (Note 18) The method for manufacturing a semiconductor device as described in Appendix 17, wherein the first value is the pressure difference between the pressure at the first location and the pressure at the second location.

[0078] (Note 19) The method for manufacturing a semiconductor device according to Appendix 18, wherein the first detection unit includes at least one piezoelectric element that detects the pressure difference and outputs an electrical signal that changes according to the pressure difference.

[0079] (Note 20) The method for manufacturing a semiconductor device according to Appendix 19, wherein the stage includes a first member, a piezoelectric element provided on the first member, and a second member provided on the piezoelectric element and supporting the semiconductor substrate.

[0080] Although several embodiments have been described above, these embodiments are presented only as examples and are not intended to limit the scope of the invention. The novel apparatus and methods described herein can be implemented in a variety of other forms. Furthermore, various omissions, substitutions, and modifications can be made to the embodiments of the apparatus and methods described herein, without departing from the spirit of the invention. The appended claims and equivalents are intended to include such forms and modifications that are included in the scope and spirit of the invention. [Explanation of symbols]

[0081] 1: wafer, 1a: substrate, 1b: film, 11: Chamber, 12: Stage, 12a: Lower plate, 12b: Upper plate, 12c: Piezo element, 12d: Elastic member, 12e: Support member, 13: Rotating shaft, 14: Gas supply unit, 14a: MFC, 14b: MFC, 14c: MFC, 14d: MFC, 14e: MFC, 15: Gas piping, 16: Shower head, 17: Exhaust ring, 18: Valve, 19: Pump, 21: Pressure gauge, 22: Control unit, 23: Height adjustment unit, 31: Optical sensor, 31a: Light-emitting unit, 31b: Light-receiving unit, 31c: Calculation unit

Claims

1. A chamber for housing the circuit board, A stage that supports the substrate, A gas supply unit that supplies gas into the chamber to form a film on the substrate, A first detection unit detects a first value that changes in accordance with the pressure at a first location above the stage in the chamber and the pressure at a second location different from the first location in the chamber. A second detection unit that detects a second value that changes according to the pressure at the second location, A control unit that controls the process of forming the film on the substrate based on the first and second values, A film deposition apparatus equipped with the following features.

2. A chamber for housing the circuit board, A stage that supports the substrate, A gas supply unit that supplies gas into the chamber to form a film on the substrate, A first detection unit detects a first value that changes in accordance with the pressure at a first location above the stage in the chamber and the pressure at a second location different from the first location in the chamber. A control unit that controls the process of forming the film on the substrate based on the first value, Equipped with, The first value is the pressure difference between the pressure at the first location and the pressure at the second location. Film deposition equipment.

3. The film deposition apparatus according to claim 1 or 2, wherein the control unit controls the height of the stage based on the first value.

4. The film deposition apparatus according to claim 1 or 2, wherein the first location is located between the stage and a shower head that supplies gas supplied from the gas supply unit into the chamber.

5. The film deposition apparatus according to claim 1 or 2, wherein the second location is located below the stage in the chamber.

6. The film deposition apparatus according to claim 1, wherein the second value is the pressure at the second location.

7. The film deposition apparatus according to claim 2, wherein the first detection unit includes at least one piezoelectric element that detects the pressure difference and outputs an electrical signal that changes according to the pressure difference.

8. The film deposition apparatus according to claim 7, wherein the stage includes a first member, a piezoelectric element provided on the first member, and a second member provided on the piezoelectric element and supporting the substrate.

9. The film-forming apparatus according to claim 7, wherein the control unit controls the process of forming the film on the substrate based on a plurality of first values ​​detected at a plurality of first locations by a plurality of piezoelectric elements of the first detection unit.

10. The semiconductor substrate is housed in the chamber. The semiconductor substrate is supported by a stage, The first detection unit detects a first value that changes according to the pressure at a first location above the stage in the chamber and the pressure at a second location different from the first location in the chamber. The second detection unit detects a second value that changes according to the pressure at the second location, The control unit controls the process of supplying gas from the gas supply unit into the chamber and forming a film on the semiconductor substrate based on the first and second values. A method for manufacturing a semiconductor device, including the following.

11. The semiconductor substrate is housed in the chamber. The semiconductor substrate is supported by a stage, The first detection unit detects a first value that changes according to the pressure at a first location above the stage in the chamber and the pressure at a second location different from the first location in the chamber. The control unit controls the process of supplying gas from the gas supply unit into the chamber and forming a film on the semiconductor substrate based on the first value. This includes, The first value is the pressure difference between the pressure at the first location and the pressure at the second location. A method for manufacturing a semiconductor device.

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