Film deposition method and film deposition apparatus

Abstract

To provide a technique capable of forming a SiCN film which is hardly oxidized.SOLUTION: A deposition method according to one aspect of the present disclosure includes steps of: supplying an original gas having an annular structure containing silicon atom and carbon atom in a molecule to a substrate, and having the substrate absorb the original gas; performing a heating treatment of the substrate in an atmosphere containing a nitride gas, and performing a heating nitridation of the original gas absorbed by the substrate; and exposing the substrate to a hydrogen plasma, and modifying the original gas to which the heating nitridation is performed.SELECTED DRAWING: Figure 1

Claims

1. A process comprising supplying a raw material gas having a cyclic structure containing silicon atoms and carbon atoms in its molecule to a substrate, and adsorbing the raw material gas onto the substrate, A step of heat-treating the substrate in an atmosphere containing a nitride gas to thermally nitride the raw material gas adsorbed on the substrate, A step of exposing the substrate to hydrogen plasma and modifying the thermally nitrided raw material gas, It has, In the adsorption step, the thermal nitriding step, and the modification step, the substrate is maintained at a temperature of 550°C to 630°C. Film formation method.

2. The process of adsorption, thermal nitriding, and modification is repeated multiple times in this order. The method for forming a film according to claim 1.

3. The process of adsorption and thermal nitriding is repeated multiple times in this order, followed by the modification process, and this process is repeated multiple times. The method for forming a film according to claim 1.

4. The aforementioned raw material gas has a four-membered ring structure in its molecule consisting of silicon atoms and carbon atoms. The method for forming a film according to any one of claims 1 to 3.

5. The aforementioned raw material gas is 1,1,3,3-tetrachloro-1,3-disilacyclobutane. The method for forming a film according to claim 4.

6. Processing container and A gas supply unit that supplies gas into the processing container, Control unit and Equipped with, The control unit, in the processing container, A process comprising supplying a raw material gas having a cyclic structure containing silicon atoms and carbon atoms in its molecule to a substrate, and adsorbing the raw material gas onto the substrate, A step of heat-treating the substrate in an atmosphere containing a nitride gas to thermally nitride the raw material gas adsorbed on the substrate, A step of exposing the substrate to hydrogen plasma and modifying the thermally nitrided raw material gas, The gas supply unit is controlled to perform the following actions: The control unit maintains the substrate at a temperature of 550°C to 630°C during the adsorption step, the thermal nitriding step, and the modification step. Film deposition equipment.

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