Multilayer inductor with discrete metal layered pattern

Abstract

The inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.

Claims

1. The first metallized layer multi-turn trace, A second metallized layer multi-turn trace is coupled to the first metallized layer multi-turn trace through at least one first via, A plurality of discrete third metallized layer trace segments are laminated on a plurality of discontinuous portions of the second metallized layer multi-turn trace, wherein the plurality of discrete third metallized layer trace segments are coupled to the plurality of discontinuous portions through a plurality of second vias, and the plurality of discrete third metallized layer trace segments comprises angled joint trace segments or angled trace segments, the angled joint trace segments having an angle of 45 degrees. An inductor equipped with the following features.

2. The inductor according to claim 1, wherein the plurality of discrete third metallized layer trace segments conform to the shape of the second metallized layer multi-turn trace according to a predetermined pattern.

3. The inductor according to claim 1, wherein the first metallized layer multi-turn trace comprises an angled joint trace segment and / or a line trace segment coupled to the angled trace segment, the angled joint trace segment having an angle of 45 degrees.

4. The inductor according to claim 1, wherein the thickness of one first of the plurality of discrete third metallized layer trace segments is different from the thickness of one second of the plurality of discrete third metallized layer trace segments.

5. The inductor according to claim 1, wherein the inductor is integrated into an integrated passive device (IPD).

6. The inductor according to claim 5, wherein the IPD is integrated with a radio frequency (RF) filter.

7. The inductor according to claim 5, wherein the IPD is integrated into a radio frequency (RF) module.

8. A method for fabricating a multilayer inductor having a discrete metal multilayer pattern, To form a first metallized layer multi-turn trace, A second metallized layer multi-turn trace is formed, coupled to the first metallized layer multi-turn trace through at least one first via, The method comprises forming a plurality of discrete third metallized layer trace segments on a plurality of discontinuous portions of the second metallized layer multi-turn trace, wherein the plurality of discrete third metallized layer trace segments are coupled to the plurality of discontinuous portions of the second metallized layer multi-turn trace through a plurality of second vias, and the formation of the plurality of discrete third metallized layer trace segments comprises forming angled trace segments or angled joint trace segments, each of which has an angle of 45 degrees. A method that includes [a certain feature].

9. The method of claim 8, wherein forming the plurality of discrete third metallized layer trace segments comprises depositing the plurality of discrete third metallized layer trace segments according to the shape of the second metallized layer multi-turn trace according to a predetermined pattern.

10. The method of claim 8, wherein forming the first metallized layer multi-turn trace comprises forming angled joint trace segments and / or line trace segments coupled to the angled trace segments, each of the angled joint trace segments having an angle of 45 degrees.

11. The method of claim 8, further comprising integrating the multilayer inductor into an integrated passive device (IPD).

12. The method of claim 11, further comprising integrating the IPD with a radio frequency (RF) filter.

13. The method of claim 11, further comprising integrating the IPD into a radio frequency (RF) module.

14. A radio frequency front-end (RFFE) module, Semiconductor die and An integrated passive device (IPD) die coupled to the semiconductor die and comprising the inductor described in claim 1, An RFFE module equipped with [a specific feature].

15. The RFFE according to claim 14, wherein the plurality of discrete third metallized layer trace segments are arranged in the thermal hotspots of the IPD.

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