Electrostatic end effectors for manufacturing system robots

Abstract

Disclosed herein are embodiments of electrostatic end effectors and methods of manufacturing the same. In one embodiment, the electrostatic end effector comprises a ceramic base, a first electrode layer coupled to the ceramic base, and a second electrode layer coupled to the ceramic base. The electrostatic end effector is configured to generate an electrostatic force on a substrate in response to a voltage applied to the first electrode. The electrostatic force on the substrate can increase the frictional force on the substrate, which can enable the end effector to accelerate at a faster rate than current technology without the substrate slipping on the end effector.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a method of manufacturing and design parameters for an electrostatic end effector for a semiconductor manufacturing system robot.

Background Art

[0002] An electronic device manufacturing system can include one or more tools or components for transporting and manufacturing a substrate. The electronic device manufacturing system may use a robotic device (e.g., a transfer chamber robot, a factory interface robot) to transfer a substrate from one location to another. For example, a transfer chamber robot can be configured to transport a substrate between a load lock and a processing chamber. The robotic device can have one or more end effectors that handle the substrate as the substrate is transferred between positions.

[0003] Some current robotic end effectors rely on static friction between the end effector and the substrate to enable the robot to transport the substrate on the end effector. Thus, the peak acceleration of the robot's end effector is limited to about 0.1 G (one tenth of the acceleration due to gravity). If the end effector accelerates beyond the limit allowed by the static friction force between the end effector and the substrate, the substrate may slide on the end effector, potentially compromising the placement and manufacturing process of the substrate. Even a slight misalignment of the substrate can cause particles to be scraped off the substrate, leading to contamination. Therefore, there is a need for an improved end effector for transporting substrates while increasing speed efficiency.

Summary of the Invention

[0004] The following is a simplified summary of the Disclosure to provide a basic understanding of some aspects of the Disclosure. This summary is not intended to provide a broad overview of the Disclosure. It is not intended to identify any key or important elements of the Disclosure, nor to describe the scope of any particular implementation of the Disclosure or the claims. Its sole purpose is to present some of the concepts of the Disclosure in a simplified form as a prelude to the more detailed explanations that will be presented later.

[0005] In one aspect of the present disclosure, the electrostatic end effector comprises a ceramic base, a first electrode layer connected to the ceramic base, and a second electrode layer connected to the ceramic base. The electrostatic end effector is configured to generate an electrostatic force on a substrate in response to a voltage applied to the first electrode.

[0006] In another aspect of the present disclosure, a method for manufacturing an electrostatic end effector includes providing a ceramic blank. The method further includes performing a material removal process on the ceramic blank to generate one or more feature portions on the upper surface of the ceramic blank. The method further includes depositing a cathode layer on at least the upper surface of the ceramic blank. The method further includes depositing a dielectric layer on at least the cathode layer. The method further includes depositing an anode layer on at least a portion of the dielectric layer.

[0007] In another aspect of the present disclosure, a method for manufacturing an electrostatic end effector includes providing a plurality of ceramic sheets. The method further includes performing a lamination process to produce a set of laminated layers by combining one or more electrode layers with the plurality of ceramic sheets. The method further includes performing a sintering process to produce a set of sintered layers by bonding the laminated layers together. The method further includes grinding at least the upper surface of the sintered layers. The method further includes polishing at least the upper surface of the sintered layers.

[0008] This disclosure is provided as an example and is not limited to the figures in the accompanying drawings in which similar references show similar elements. It should be noted that various references to “an” or “one” embodiments in this disclosure do not necessarily refer to the same embodiment, and such references mean at least one. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic top view of an example manufacturing system according to a specific embodiment. [Figure 2A] A schematic top view of a unipolar electrostatic end effector according to a particular embodiment. [Figure 2B] A schematic cross-sectional view of at least a portion of a unipolar electrostatic end effector according to a particular embodiment. [Figure 3] A two-dimensional representation of one or more layers of a unipolar electrostatic end effector according to a particular embodiment. [Figure 4A] A schematic upper cross-sectional view of a unipolar electrostatic end effector according to a particular embodiment. [Figure 4B] A schematic bottom cross-sectional view of a unipolar electrostatic end effector according to a particular embodiment. [Figure 4C] A schematic cross-sectional view of at least a portion of a unipolar electrostatic end effector according to a particular embodiment. [Figure 5] Flowchart of a method for manufacturing a unipolar electrostatic end effector according to a specific embodiment. [Figure 6] Another flowchart of a method for manufacturing a unipolar electrostatic end effector according to a particular embodiment. [Modes for carrying out the invention]

[0010] This specification describes a technology for electrostatic robot end effectors configured to transport substrates in an electronic device manufacturing system. The electronic device manufacturing system can perform one or more processes on a substrate in one or more processing chambers. The electronic device manufacturing system may include a transport chamber positioned adjacent to one or more processing chambers. The transport chamber may include a robot having one or more end effectors capable of positioning the substrate on it while the substrate is being transported between one or more processing chambers by the robot. Furthermore, the electronic device manufacturing system may include a factory interface robot positioned adjacent to a factory interface. The factory interface robot may include a robot having one or more end effectors capable of positioning the substrate while the substrate is being transported to or from the factory interface. Existing robot end effectors rely on static friction between the end effector and the substrate to enable substrate transport, and therefore the acceleration of the end effector is limited. Accelerating the end effector beyond the static friction limit can impair the placement of the substrate, lead to contamination by scraped particles, and potentially cause defects in the substrate that render it unusable.

[0011] Embodiments of this disclosure relate to electrostatic end effectors for semiconductor manufacturing system robots. In some embodiments, the robot end effectors described herein may include an anode and a cathode. The anode and cathode may be substantially coplanar. For example, the anode and cathode may be arranged substantially in the same plane. Furthermore, the anode and cathode may be separated by one or more dielectric layers. When a substrate is positioned on the end effector, a voltage may be applied to the cathode. The anode may be grounded. In some embodiments, the applied voltage may be unipolar, but in other embodiments, it may be bipolar. The applied voltage may generate an electrostatic attraction between the end effector and the substrate. The attraction may increase static friction between the end effector and the substrate, allowing the end effector to be accelerated at a faster speed than an end effector that relies solely on static friction, while transporting the substrate without slipping.

[0012] A first method for manufacturing a robotic end effector according to the present disclosure may include providing a ceramic blank. In some embodiments, the ceramic blank is machined from stock. The ceramic blank can be machined from alumina (i.e., aluminum oxide), one or more other ceramic materials having suitable properties, or any combination thereof. The ceramic blank may have a flat top surface. The method may further include a material removal operation on at least the top surface of the ceramic blank at a controlled position. In some embodiments, the ceramic blank is microbead blasted. The material removal process may generate a plurality of pillars and valleys on the top surface of the end effector. The plurality of pillars may be small, substantially cylindrical protrusions projecting from the top surface of the end effector. The plurality of pillars may be arranged in a pattern on the top surface of the end effector. In some embodiments, the plurality of pillars may be arranged in substantially rows on the top surface of the end effector. One or more valleys may be depressions on the top surface of the end effector. One or more valleys may be elongated rather than wide. In some embodiments, one or more valleys separate one or more rows of pillars. Next, one or more layers may be deposited on at least the upper surface of the end effector. In some embodiments, one or more layers are deposited by a physical vapor deposition (PVD) process. The first layer deposited on the upper surface of the end effector may be a cathode layer. The second layer may be a dielectric layer. The third layer may be an anode layer. In some embodiments, the anode layer may be a ground layer. The anode layer may be deposited at least above the pillars on the dielectric layer. When in use, the substrate may be positioned on the anode layer above the pillars. In some embodiments, each of the one or more layers may be about 10 μm thick. However, a range of layer thicknesses can be used to construct the end effector in such a way that it provides sufficient electrostatic attraction between the end effector and the substrate.

[0013] A second method for manufacturing an electrostatic end effector according to the present disclosure may include first machining a plurality of ceramic sheets. In some embodiments, the ceramic sheets are manufactured from alumina. A lamination process may be used to combine one or more electrode layers with the plurality of ceramic sheets. In some embodiments, the end effector includes a first electrode layer and a second electrode layer that are coplanar and electrically insulated from each other. In other embodiments, the end effector includes a first electrode layer located beneath the second electrode layer. One or more electrode layers may be made of a conductive material. For example, one or more electrode layers may be platinum. The method may further include producing a set of sintered layers by performing a sintering process to bond the laminated layers together to form a rough end effector. The sintering process may include heating the laminated layers sufficiently so that the layers coalesce into a single mass. The method may further include grinding the upper surface of the end effector to flatten the surface. The method may further include polishing the upper surface of the end effector. In some embodiments, polishing may be performed by a lapping process. In some embodiments, the lapping process is a polishing process. For example, the lapping process can be achieved by rubbing the tool surface against the upper surface of the end effector with a fine abrasive in between. The lapping process may include using a fine abrasive on the upper surface of the end effector to further flatten and polish the upper surface of the end effector. During operation, the substrate can be positioned on the upper surface of the end effector. A voltage can be applied to the second electrode layer while the first electrode layer is grounded. This can generate an electrostatic force between the end effector and the substrate, increasing the static friction between the substrate and the end effector.

[0014] In some embodiments, the second manufacturing method further includes a material removal operation performed on the upper surface of the end effector. In some embodiments, the material removal operation is a microbead blasting process. The microbead blasting process may include applying a microabrasive under high pressure to the upper surface of the end effector to remove material from the surface of the end effector. The microabrasive may be small glass beads. The material removal operation can generate a plurality of mesa on the upper surface of the end effector. The plurality of mesa may be substantially cylindrical protrusions projecting from the upper surface of the end effector. In some embodiments, the protruding electrodes may rise from one or more mesa and extend downward to a first lower electrode layer. One or more protruding electrodes may be electrically connected to the lower electrode layer while being electrically insulated from the upper electrode layer. One or more protruding electrodes may be manufactured from a conductive material. For example, one or more protruding electrodes may be manufactured from platinum. When the end effector is operating, the substrate may be positioned on one or more protruding electrodes.

[0015] An end effector that applies an attractive force between itself and the substrate can increase the end effector's acceleration limit without moving the substrate. This allows for increased substrate transport speeds, leading to improved productivity in the manufacturing system.

[0016] Figure 1 is a schematic top view of an example manufacturing system 100 according to an aspect of the present disclosure. The manufacturing system 100 can carry out one or more processes on a substrate 102. The substrate 102 can be a fixed-dimension planar article of any suitable rigidity, such as a silicon-containing disk or wafer, a patterned wafer, or a glass plate, suitable for manufacturing electronic devices or circuit components thereon.

[0017] The manufacturing system 100 may include a processing tool 104 and a factory interface 106 connected to the processing tool 104. The processing tool 104 may include a housing 108 having a transfer chamber 110 inside. The transfer chamber 110 may include one or more process chambers (also called processing chambers) 114, 116, 118 arranged around it and connected to it. The processing chambers 114, 116, 118 can be connected to the transfer chamber 110 via their respective ports, such as slit valves. The transfer chamber 110 may also include a transfer chamber robot 112 configured to transfer substrates 102 between the processing chambers 114, 116, 118, a load lock 120, etc. The transfer chamber robot 112 may include one or more arms, each arm including one or more end effectors at the end of each arm. The end effectors may be configured to handle specific objects, such as wafers.

[0018] The processing chambers 114, 116, and 118 can be adapted to perform any number of processes on the substrate 102. The same or different substrate processes can be performed in each processing chamber 114, 116, and 118. Substrate processes may include atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), etching, annealing, curing, pre-cleaning, and removal of metals or metal oxides. Other processes may be performed on the substrate. Each of the processing chambers 114, 116, and 118 may include one or more sensors configured to capture data of the substrate 102 before, after, or during the substrate process. For example, one or more sensors may be configured to capture some spectral data and / or non-spectral data of the substrate 102 during the substrate process. In other or similar embodiments, one or more sensors may be configured to capture data related to the environment within the process chambers 114, 116, and 118 before, after, or during the substrate process. For example, one or more sensors can be configured to capture data related to the temperature, pressure, gas concentration, and other environmental factors within the processing chambers 114, 116, and 118 during the substrate process.

[0019] The load lock 120 can also be connected to the housing 108 and the transfer chamber 110. The load lock 120 can be configured to interface with the transfer chamber 110 on one side and with the factory interface 106 on the other side. In some embodiments, the load lock 120 may have an environmentally controlled atmosphere that can be changed from a vacuum environment (to which substrates can be transferred to and from the transfer chamber 110) to an atmospheric pressure or near-atmospheric pressure inert gas environment (to which substrates can be transferred to and from the factory interface 106). The factory interface 106 may be any suitable housing, such as an equipment front-end module (EFEM). The factory interface 106 may be configured to receive substrates 102 from a substrate carrier 122 (e.g., a front-opening unified pod (FOUP)) docked at various load ports 124 of the factory interface 106. The factory interface robot 126 (shown by a dashed line) can be configured to transfer the substrate 302 between the carrier (also called a container) 122 and the load lock 120. The carrier 122 may be a substrate storage carrier or a replacement parts storage carrier.

[0020] The manufacturing system 100 may also be connected to a client device (not shown) configured to provide information about the manufacturing system 100 to a user (e.g., an operator). In some embodiments, the client device may provide information to the user of the manufacturing system 100 via one or more graphical user interfaces (GUIs). For example, the client device may provide information via the GUI about the target thickness profile of the film to be deposited on the surface of the substrate 102 during the deposition process carried out in processing chambers 114, 116, and 118. The client device may also provide information about modifying the process recipe, taking into account each set of deposition settings that are expected to correspond to the target profile, according to embodiments described herein.

[0021] Manufacturing system 100 can also include a system controller 128. The system controller 128 can be a computing device such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc., and / or can include them. The system controller 128 can include one or more processing devices, which can be a general-purpose processing device such as a microprocessor, a central processing unit, etc. More specifically, the processing device can be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing another instruction set or a combination of instruction sets. The processing device can also be one or more dedicated processing devices such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. The system controller 128 can include a data storage device (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, a network interface, and / or other components. The system controller 128 can execute instructions for implementing any one or more of the methods and / or embodiments described herein. In some embodiments, the system controller 128 can execute instructions for performing one or more operations in the manufacturing system 100 according to a process recipe. The instructions can be stored in a computer-readable storage medium, which can include main memory, static memory, secondary storage, and / or a processing device (during execution of the instructions).

[0022] The system controller 128 can receive data from sensors included on or within various parts of the manufacturing system 100 (such as the processing chambers 114, 116, 118, the transfer chamber 110, the load lock 120, etc.). In some embodiments, the data received by the system controller 128 can include spectral data and / or non-spectral data for a part of the substrate 102. In other or similar embodiments, the data received by the system controller 128 can include data related to the processing of the substrate 102 in the processing chambers 114, 116, 118, as described above. For the purposes of this description, the system controller 128 is described as receiving data from sensors included within the processing chambers 114, 116, 118. However, the system controller 128 can receive data from any part of the manufacturing system 100 and use the data received from that part, in accordance with the embodiments described herein. In an exemplary instance, the system controller 128 can receive data from one or more sensors of the processing chambers 114, 116, 118 before, after, or during the substrate process in the processing chambers 114, 116, 118. The data received from sensors of various parts of the manufacturing system 100 can be stored in the data store 150. The data store 150 can be included as a component within the system controller 128 or can be a separate component from the system controller 128.

[0023] FIG. 2A is a schematic top view of an end effector 200 according to an embodiment of the present disclosure. The end effector 200 can include an end effector base 210, a robot connector 216, pillars 220, a cathode layer 230, a dielectric layer 240, and a ground layer 250. FIG. 2A shows the layers of the end effector 200 superimposed on each other. The layers of the end effector 200 are shown separately in FIGS. 3A - D. In some embodiments, the end effector 200 can include one or more sensors.

[0024] The end effector base 210 may include a ceramic material. In some embodiments, the end effector body 210 is alumina ceramic. The end effector 200 can be attached to a robot via a robot connector 216 by one or more fasteners or other connectors. In some embodiments, pillars 220 are arranged along one or more side edges of the end effector body 210. In some embodiments, the pillars 220 are arranged in lines substantially parallel to the longitudinal axis of the end effector base 210. In some embodiments, the pillars 220 rise about 20 μm from the surface of the end effector base 210. The pillars 220 can support the substrate that the end effector 200 is transporting or intending to transport. In some embodiments, the end effector 200 includes 100 or more pillars 220. In some embodiments, the end effector 200 includes sufficient pillars to minimize bending of the substrate carried by the end effector 200 when an attractive force is applied between the end effector 200 and the substrate. The end effector base 210 may include substantially one or more valleys 225 between one or more rows of pillars 220. One or more valleys 225 can be generated by a material removal process. In some embodiments, the same process that generates the pillars 220 also generates one or more valleys 225. One or more valleys 225 can be generated by a microbead blasting process. In some embodiments, the depth of one or more valleys 225 of the end effector base 210 is about 40 μm.

[0025] One or more layers can be deposited on at least the upper surface of the end effector 200. These one or more layers can be deposited by one or more deposition processes. In some embodiments, one or more layers are deposited by a vapor deposition process. In certain embodiments, one or more layers are deposited by a PVD process. The cathode layer 230 and the ground layer 250 can be made of a conductive material. The ground layer 250 may be the anode layer. In some embodiments, the cathode layer 230 and the ground layer 250 are titanium layers deposited by a PVD process. The cathode layer 230 can be applied to one or more valleys of the end effector base 210. A dielectric layer 240 can be deposited on top of the cathode layer 230 (see Figure 2B). The dielectric layer 240 may contain a dielectric. In some embodiments, the dielectric layer 240 is a layer of aluminum oxide (AlO). In some embodiments, the dielectric layer 240 can be deposited on top of the cathode layer 230 and the pillar 220 (see Figure 2B). In some embodiments, the ground layer 250 is deposited on top of the dielectric layer 240. In some embodiments, the ground layer 250 is deposited on the upper surface of each of the pillars 220, also forming a conductive path.

[0026] Figure 2B is a schematic cross-sectional view of at least a portion of a unipolar electrostatic end effector according to a particular embodiment. The end effector base 210 may have one or more layers deposited on at least its upper surface. In some embodiments, a cathode layer 230, a dielectric layer 240, and a ground layer 250 are deposited on the end effector base 210. The cathode layer 230, the dielectric layer 240, and the ground layer 250 may be located within the outer boundary of the end effector base 210 formed by the outer edge of the end effector base 210. The cathode layer 230 may be deposited on one or more valleys 225 of the end effector base 210. The dielectric layer 240 may be deposited on top of the cathode layer 230 and may extend up the sidewalls of the valleys 225 of the end effector base 210 and cover at least the surface of one or more pillars 220. The ground layer 250 can be deposited on the dielectric layer 240 when the dielectric layer 240 covers one or more pillars 220. A substrate 280 may be positioned on top of the ground layer 250. In some embodiments, the thickness of each of the cathode layer 230, dielectric layer 240, and ground layer 250 is approximately 10 μm. In other embodiments, each of the cathode layer 230, dielectric layer 240, and ground layer 250 may be of a thickness such that when a voltage is applied to the cathode layer 230, the resulting desired electrostatic attraction is applied to the substrate 280. In some embodiments, there is a gap of approximately 60 μm between the upper surface of the dielectric layer 240 and the lower surface of the substrate 280. However, a smaller or larger gap may exist if an appropriate voltage is applied to the cathode layer 230 to generate the resulting desired electrostatic attraction. In some embodiments, a gap may be necessary to avoid glow discharge failure in a particular environment or pressure range. Furthermore, the gap can be adjusted to suit a specific pressure range (for example, a smaller gap at a certain pressure and a larger gap at a different pressure). In some embodiments, the gap is adjusted using a piezoelectric actuator that vertically extends and / or retracts the pillar.

[0027] In some embodiments, the end effector 200 may be used by a transfer chamber robot or a factory interface robot to transport a substrate in an electronic device manufacturing system (e.g., system 100). The substrate 280 can be transported by the end effector 200. While the end effector 200 is transporting the substrate 280, the substrate 280 may be positioned on a ground layer 250. A voltage may be applied to the cathode layer 230, and the ground layer 250 may be grounded, thus generating an electrostatic force between the end effector 200 and the substrate 280. In some embodiments, the voltage applied to the cathode layer 230 is approximately 500 volts, but the applied voltage can be any voltage necessary to generate the desired electrostatic force. The electrostatic force may act on the substrate 280 to reduce or eliminate slippage of the substrate 280 on the end effector 200 when the end effector 200 is under acceleration. Therefore, this electrostatic force allows the substrate 280 to accelerate the end effector 200 more significantly without slipping.

[0028] Figures 3A–D show top views of one or more layers of a unipolar electrostatic end effector according to a particular embodiment. In some embodiments, the end effector base 210 includes pillars 220 and one or more valleys 225 substantially between the pillars. A cathode layer 230 may be deposited on the upper surface of the end effector base 210 within its outer boundary. A dielectric layer 240 may be deposited on at least the cathode layer 230 and on the upper surface of the end effector base 210. A ground layer 250 may be deposited on at least the dielectric layer 240 and on the upper surface of the end effector base 210. The ground layer 250 may also be deposited on the pillars 220, which can create conductive paths between each of the pillars 220.

[0029] Figure 4A is a schematic top cross-sectional view of a unipolar electrostatic end effector according to a particular embodiment. In some embodiments, the end effector 400 includes an end effector base 410. Multiple mesas 420 may be dispersed around the upper surface of the end effector base 410. In some embodiments, the height of each mesa is approximately 10 μm. The end effector 400 may include one or more layers embedded between one or more laminated sheets. One or more laminated sheets may be ceramic sheets. In some embodiments, one or more embedded layers are coplanar. In other embodiments, one or more layers are not coplanar. In some embodiments, one or more laminated sheets are sheets of alumina. The end effector 400 may include a cathode layer 430 between one or more laminated sheets located within the outer boundary of the end effector base 410, formed by the outer edge of the end effector base 410. The cathode layer 430 may include a conductive material. In some embodiments, the cathode layer 430 is a platinum layer. The end effector 400 may also include a ground layer 450 between one or more laminated sheets. The ground layer 450 may include a conductive material. In some embodiments, the ground layer 450 is a platinum layer. In certain embodiments, the cathode layer 430 and the ground layer 450 are coplanar but electrically insulated from each other. In some embodiments, the cathode layer 430 and the ground layer 450 are located on different planes within the end effector body 410.

[0030] Figure 4B is a schematic bottom cross-sectional view of a unipolar electrostatic end effector according to a particular embodiment. The end effector 400 may include a grounding layer 450. The grounding layer 450 may be embedded between one or more ceramic sheets and located within the outer boundary of the end effector base 410. In some embodiments, the grounding layer 450 includes one or more traces running within the end effector base 410. In other embodiments, the grounding layer 450 is located over substantially the entire mounting area of ​​the end effector base 410. In certain embodiments, the grounding layer 450 connects one or more grounding pins 460. In certain embodiments, the end effector 400 may have as few as three grounding pins 460. In other embodiments, the end effector 400 has five grounding pins 460. (See Figure 4C for a description of the grounding pins 460).

[0031] Figure 4C is a schematic cross-sectional view of at least a portion of a unipolar electrostatic end effector according to a particular embodiment. In some embodiments, the ground layer 450 is located within the end effector base 410 below the cathode layer 430. The cathode layer 430 and the ground layer 450 are electrically insulated from each other.

[0032] The end effector 400 may include a plurality of mesa 420 on the upper surface of the end effector base 410. The grounding pin 460 may include the mesa 420 and one or more grounding protrusions 452. Each grounding protrusion 452 may include a conductive material. For example, in some embodiments, each grounding protrusion 452 is platinum. The grounding protrusions 452 may rise above the upper surface of the mesa 420. In some embodiments, the grounding protrusions 452 may rise 2 to 3 μm above the upper surface of the mesa 420.

[0033] In some embodiments, the end effector 400 may be used by a transfer chamber robot or a factory interface robot to transport a substrate in an electronic device manufacturing system. The substrate may be transported by the end effector 400. While the end effector 400 is transporting the substrate, the substrate is placed on one or more mesas 420. A specific gap (e.g., 70 μm) may exist between the bottom of the substrate and the cathode layer. The gap can be adjusted to a specific pressure. In some embodiments, the gap can be adjusted by vertically extending and / or contracting the mesa 420 using a piezoelectric actuator. The substrate can be electrically contacted with one or more grounding protrusions. A voltage can be applied to the cathode layer 430, and the grounding layer 450 can be grounded, thus generating an electrostatic force between the end effector 400 and the substrate. In some embodiments, the voltage applied to the cathode layer 430 is 500 volts, but the applied voltage can be any voltage necessary to generate the desired electrostatic force. The electrostatic force can act on the substrate to reduce or eliminate slippage on the end effector 400 when the end effector 400 is in an accelerating state. Therefore, this electrostatic force allows the end effector 400 to be accelerated more significantly without the substrate slipping.

[0034] Figure 5 is a flowchart of a method for manufacturing a unipolar electrostatic end effector according to a particular embodiment. Method 500 is carried out by processing logic which may include hardware (circuits, dedicated logic, etc.), software (performed on a general-purpose computer system or dedicated machine, etc.), firmware, or any combination thereof. In one implementation, Method 500 may be carried out by a computer system or processing device not shown. In other or similar implementations, one or more operations of Method 500 may be carried out by one or more other machines not shown.

[0035] In operation 510, a ceramic blank is provided. In some embodiments, the ceramic blank is machined. In some embodiments, the ceramic blank has at least the shape of a substantially electrostatic end effector. In certain embodiments, the ceramic blank is made of alumina.

[0036] In operation 520, the ceramic blank is subjected to a material removal process to generate one or more feature areas on the upper surface of the ceramic blank. In some embodiments, the material removal process may include microbead blasting or any other suitable material removal process that can generate upper surface feature areas on the ceramic blank. The material removal process removes a portion of the upper surface of the ceramic blank so that the workpiece has multiple pillars and one or more valleys on the upper surface of the end effector.

[0037] In operation 530, a cathode layer is deposited on at least the upper surface of the end effector by a deposition process. In some embodiments, the deposition process is a gas-phase deposition process. The cathode layer may be deposited on the surface of at least one valley of the end effector.

[0038] In operation 540, a dielectric layer may be deposited on the upper surface of the end effector by the deposition process. The dielectric layer may cover the cathode layer.

[0039] In operation 550, an anode layer is deposited on the end effector. The anode lay can cover a portion of the dielectric layer. In some embodiments, the anode layer is deposited on multiple pillars of the end effector.

[0040] Figure 6 is a flowchart of another method for manufacturing a unipolar electrostatic end effector according to a particular embodiment. Method 600 is implemented by processing logic which may include hardware (circuits, dedicated logic, etc.), software (performed on a general-purpose computer system or dedicated machine, etc.), firmware, or any combination thereof. In one implementation, Method 600 may be implemented by a computer system or processing device not shown. In other or similar implementations, one or more operations of Method 600 may be implemented by one or more other machines not shown.

[0041] In operation 610, a plurality of ceramic sheets are provided, each having the approximate contour of the finished end effector. In certain embodiments, the ceramic sheets are sheets of alumina. In some embodiments, the ceramic sheets are machined from stock.

[0042] In operation 620, a lamination process is carried out to generate a set of laminated layers by combining one or more electrode layers with multiple ceramics. One or more electrode layers may include at least an anode layer and a cathode layer. In some embodiments, the cathode layer and anode layer are coplanar. In other embodiments, the cathode layer and anode layer are arranged one above the other or vice versa.

[0043] In operation 630, a set of sintered layers is produced by performing a sintering process to bond the laminated layers together. The sintering process may include exposing the laminated layers to a sufficiently high temperature in an oven so that the layers coalesce into a single mass.

[0044] In operation 640, a grinding operation may be performed on at least the upper surface of the sintered end effector. The grinding operation can be achieved using a coarse abrasive. The grinding operation may make the upper surface of the end effector nearly flat.

[0045] In operation 650, at least the upper surface of the end effector may be polished by a polishing process. This polishing process can be achieved using a fine abrasive. As a result of the polishing process, the end effector may have a polished, smooth upper surface.

[0046] The foregoing description includes many specific details, such as examples of particular systems, components, and methods, in order to provide a full understanding of some embodiments of the Disclosure. It will be apparent to those skilled in the art that at least some embodiments of the Disclosure are implementable without these specific details. In other cases, well-known components or methods are not described in detail or are presented in the form of simple block diagrams, in order to avoid unnecessarily obscuring the Disclosure. Thus, the specific details described are merely illustrative. Certain implementations may differ from these illustrative details but are still considered to be within the scope of the Disclosure.

[0047] Throughout this specification, any reference to “one embodiment” or “a particular embodiment” means that any specific feature, structure, or characteristic described in relation to that embodiment is included in at least one embodiment. Therefore, the phrases “in one embodiment” or “in a particular embodiment” appearing in various places throughout this specification do not necessarily all refer to the same embodiment. In addition, the term “or” is intended to mean inclusive, rather than exclusive. Where the terms “about” or “approximately” are used herein, this is intended to mean that the nominal values ​​presented are accurate to within ±10%.

Claims

1. It is an electrostatic end effector, A ceramic base comprising multiple pillars configured to support a substrate; A first electrode layer is disposed between the plurality of pillars on the surface of the ceramic base. A dielectric layer disposed on the first electrode layer and on the plurality of pillars, and A second electrode layer disposed on a portion of the dielectric layer on the plurality of pillars, wherein the electrostatic end effector is configured to generate an electrostatic force on the substrate in response to a voltage being applied to the first electrode layer. An electrostatic end effector equipped with [a specific feature].

2. The electrostatic end effector according to claim 1, wherein the plurality of pillars are arranged in a row on the upper surface of the ceramic base.

3. The electrostatic end effector according to claim 2, further comprising a plurality of valleys between the rows of the plurality of pillars, wherein the first electrode layer is deposited on at least one surface of the plurality of valleys.

4. The electrostatic end effector according to claim 2, wherein the first electrode layer and the second electrode layer include a titanium layer deposited by a physical vapor deposition process.

5. The dielectric layer is substantially deposited on the first electrode layer and the plurality of pillars, and The second electrode layer is substantially deposited on the dielectric layer. The electrostatic end effector according to claim 2.

6. The electrostatic end effector according to claim 1, wherein the ceramic base comprises a plurality of laminated sheets, and the ceramic base electrically insulates the first electrode layer from the second electrode layer.

7. The electrostatic end effector according to claim 6, wherein the first electrode layer and the second electrode layer are embedded within the plurality of laminated sheets.

8. The electrostatic end effector according to claim 6, wherein the plurality of pillars further comprises a plurality of mesa dispersed over the upper surface of the ceramic base, and the plurality of mesa are configured to support the substrate.

9. The electrostatic end effector according to claim 8, wherein the first electrode layer and the second electrode layer are platinum layers, the second electrode layer is substantially located below the first electrode layer, and the second electrode layer has one or more projections that rise up through one or more of the mesas and project therefrom.

10. A method for manufacturing an electrostatic end effector, To provide ceramic blanks, A material removal process is performed on the ceramic blank to generate one or more feature portions having multiple pillars on the upper surface of the ceramic blank. Depositing a cathode layer on at least the upper surface of the ceramic blank between the plurality of pillars on the surface of the ceramic blank, Depositing a dielectric layer at least on the cathode layer and on the plurality of pillars, Depositing an anode layer on at least a portion of the dielectric layer on the plurality of pillars. Methods that include...

11. The method according to claim 10, wherein the plurality of pillars are arranged in a row on the upper surface of the ceramic blank.

12. The method according to claim 11, wherein the material removal process generates a plurality of valleys on the upper surface of the ceramic blank between the rows of the plurality of pillars, and the cathode layer is deposited on one or more surfaces of the plurality of valleys.

13. The method according to claim 10, wherein the cathode layer and the anode layer include a titanium layer deposited by a physical vapor deposition process.

14. The dielectric layer is substantially deposited on the cathode layer and the plurality of pillars, and The anode layer is substantially deposited on the dielectric layer on the plurality of pillars. The method according to claim 11.

15. The method according to claim 10, wherein at least one of the cathode layer, the dielectric layer, or the anode layer is deposited by a physical vapor deposition process.

16. A method for manufacturing an electrostatic end effector, To provide multiple ceramic sheets, A set of laminated layers is generated by performing a lamination process and combining one or more electrode layers with the plurality of ceramic sheets. A set of sintered layers is produced by performing a sintering process to bond the laminated layers. Grinding at least the upper surface of the sintered layer, and Polishing at least the upper surface of the sintered layer. Methods that include...

17. A material removal process is performed to generate multiple mesa on the upper surface of the electrostatic end effector. The method according to claim 16, further comprising:

18. The method according to claim 16, wherein one or more electrode layers are made of platinum.

19. The method according to claim 16, wherein one or more electrode layers are located on the same plane.

20. The method according to claim 17, wherein the one or more electrode layers include a cathode layer and a ground layer, the ground layer is located below the cathode layer, and the ground layer has one or more projections that rise up through one or more mesas and protrude therefrom.

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