Semiconductor inspection equipment and semiconductor inspection method

The semiconductor inspection apparatus and method address the challenge of inaccurate delay measurement by using photoelectron pulses and absorption current acquisition to synchronize and map signal delays in semiconductor samples.

JP7883159B2Active Publication Date: 2026-07-01TOSHIBA INFORMATION SYSTEMS (JAPAN) CORPORATION
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TOSHIBA INFORMATION SYSTEMS (JAPAN) CORPORATION
Filing Date
2024-09-30
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Conventional semiconductor inspection methods, such as EBAC observation and ultrafast time-resolved scanning electron microscopes, struggle to accurately measure signal delay due to inconsistencies in timing measurements and continuous electron beam irradiation.

Method used

A semiconductor inspection apparatus and method utilizing photoelectron pulses generated at precise time intervals, combined with a short-needle and stage absorption current acquisition, to measure signal delay by creating signal delay information through synchronized waveform observation.

Benefits of technology

Enables accurate and precise measurement of signal delay in semiconductor samples by synchronizing photoelectron pulses with absorption currents, allowing for two-dimensional mapping of delay times and signal amounts.

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Abstract

This invention provides a semiconductor inspection apparatus and semiconductor inspection method that enable accurate measurement of delay. [Solution] The inspection processing unit 100 comprises a photoelectron pulse generating means 101 that generates photoelectron pulses at time intervals for measuring the signal delay occurring in a semiconductor sample to be measured; an irradiation processing means 102 that irradiates the surface of the semiconductor sample with the photoelectron pulses; a short needle / absorption current acquisition means 103 that extracts the short needle / absorption current flowing through the semiconductor sample irradiated with the photoelectron pulses via a short needle 310 that contacts the semiconductor sample; a timing signal output means 104 that outputs a timing signal for the generation of the photoelectron pulses; and a signal delay information creation means 105 that creates signal delay information at the short needle based on the short needle / absorption current extracted by the short needle / absorption current acquisition means 103 and the timing signal output by the timing signal output means 104.
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