Gate metal-insulator-field plate metal integrated circuit capacitor and method for forming the same

By integrating a GaN transistor with a metal-insulator-metal capacitor using a common gate metal and thin TiN field plate, the manufacturing complexity and topology issues are resolved, enhancing breakdown voltage and handling higher voltages in both polarities.

JP7883506B2Active Publication Date: 2026-07-01EFFICIENT POWER CONVERSION CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
EFFICIENT POWER CONVERSION CORP
Filing Date
2022-02-16
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Existing integrated circuits with metal-insulator-metal capacitors require a separate process flow from transistors due to the use of different metal layers, leading to manufacturing complexity and topology degradation from thick aluminum-based field plates.

Method used

Integrate a GaN transistor with a metal-insulator-metal capacitor using a common gate metal, field plate metal, and dielectric layer, where the field plate is formed from a thin non-aluminum metal like TiN, allowing conductive vias to penetrate the upper plate without an etching stop, and incorporating ring-shaped structures to enhance breakdown voltage.

Benefits of technology

This integration simplifies the manufacturing process, eliminates topology degradation, and improves breakdown voltage capabilities in both polarities, enabling capacitors to handle higher voltages without short-circuiting.

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Abstract

An integrated circuit including a GaN FET and a metal-insulator-metal capacitor. The capacitor is fully integrated with the lateral GaN process flow; that is, the same gate metal layer, field plate metal layer, and dielectric layer of the GaN FET are also used to form the bottom plate, insulator, and top plate of the capacitor. The top plate is contacted by a conductive via that extends through the top plate. To increase the voltage breakdown capacity of the integrated circuit capacitor, a portion of the gate metal layer is formed in the shape of a ring around the conductive via.
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