Pathogen inactivation device, pathogen inactivation method

Abstract

To provide a pathogen inactivation device that can suppress ineffective consumption of a radical and is excellent in energy efficiency of treatment, and a pathogen inactivation method.SOLUTION: A pathogen inactivation device 1 comprises: a plasma generation chamber 10; a high-voltage electrode 20 and a ground electrode 30 that are arranged opposite to each other at a distance within the plasma generation chamber 10; a flow rate adjustment 40 that adjusts a flow rate of plasma source gas flowing into the plasma generation chamber 10; a pressure reducing pump 50 and a pressure adjustment 60 that adjust the pressure in the plasma generation chamber 10 to a predetermined pressure; and a high voltage power source 70 that generates discharge plasma P between the high voltage electrode 20 and the ground electrode 30.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a pathogen inactivation device and a pathogen inactivation method.

Background Art

[0002] As a device for inactivating bacteria and viruses (hereinafter, bacteria and viruses are collectively referred to as "pathogens") by a gas-phase reaction in a closed space, treatment devices using ultraviolet light (UV) or ozone have been put into practical use. However, in these devices, the time required for inactivation is long, and it is difficult to improve the treatment rotation rate.

[0003] Plasma, which is a collective of ionized gas, has been studied for application to various fields such as semiconductor manufacturing and environmental purification in addition to the nuclear fusion source. In particular, in recent years, atmospheric pressure plasma with low thermal energy but high chemical reactivity has attracted attention. Atmospheric pressure plasma is expected to be applied to a wide range of fields where conventional low-pressure plasma cannot be applied, such as sterilization and disinfection, medical treatment, and surface modification of materials. Atmospheric pressure plasma is being studied for application to sterilization and the like as a technique for performing chemical treatment without causing thermal damage to the object. In particular, in the fields of water treatment and sterilization / disinfection, since there are restrictions on the operating conditions of practical devices, atmospheric pressure plasma that can treat a wide range of objects with a simple device has great advantages. As a sterilization device using plasma, for example, those described in Patent Documents 1 to 3 are known.

Prior Art Documents

Patent Documents

Summary of the Invention

Problems to be Solved by the Invention

[0005] Using chemically active species (radicals) generated in atmospheric pressure plasma may enable faster inactivation of pathogens. However, while atmospheric pressure plasma can generate high-density radicals, these radicals are easily deactivated by collisions with atmospheric particles. Therefore, radicals in atmospheric pressure plasma not only have a short lifetime but also suffer from significant wasted energy consumption (not being used for inactivation), resulting in poor energy efficiency in processing.

[0006] The present invention has been made in view of the above circumstances, and aims to provide a pathogen inactivation device and a pathogen inactivation method that can suppress the ineffective consumption of radicals and have excellent energy efficiency in processing. [Means for solving the problem]

[0007] The present invention has the following aspects. [1] Plasma generation chamber and One or more electrodes are arranged facing each other with a distance between them in the plasma generation chamber, A flow regulator for adjusting the flow rate of the plasma raw material gas flowing into the plasma generation chamber, A pressure reducing pump and a pressure regulator for adjusting the pressure inside the plasma generation chamber to a predetermined pressure, A pathogen inactivation device comprising a high-voltage power supply for generating discharge plasma between a pair of electrodes. [2] The pathogen inactivation apparatus according to [1], comprising a mechanism for using a pathogen-laden material as one electrode in the plasma generation chamber and generating discharge plasma between the other electrode and the pathogen-laden material. [3] The pathogen inactivation apparatus according to [1] or [2], comprising a mechanism for making a portion of the wall surface of the plasma generation chamber a pathogen-adhering material and bringing discharge plasma into contact with the wall surface. [4] A memory device that stores conditions for maximizing the amount of radical action on pathogen-laden substances, and a pressure gauge that measures the pressure inside the plasma generation chamber, A pathogen inactivation apparatus according to any one of [1] to [3], comprising a mechanism for adjusting the pressure in the plasma generation chamber with a target of optimal pressure conditions output from the memory device. A method for inactivating pathogens using a pathogen inactivation device described in any of [5][1] to [4], A method for inactivating pathogens, comprising: placing an object in the plasma generation chamber; adjusting the pressure in the plasma generation chamber to 0.1 atmospheres to 0.9 atmospheres; generating discharge plasma between the pair of electrodes; generating plasma in the plasma generation chamber to produce oxidative radicals; and inactivating pathogens attached to the object. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a pathogen inactivation device and a pathogen inactivation method that can suppress the ineffective consumption of radicals and have excellent energy efficiency in processing. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic diagram showing a pathogen inactivation device relating to one embodiment of the present invention. [Figure 2] This figure shows the relationship between the density of oxygen atoms and the time after discharge, in each case where the pressure in the plasma generation chamber near the stainless steel needle is 20 kPa, 30 kPa, 50 kPa, 70 kPa, or 95 kPa, in Example 1. [Figure 3] This figure shows the relationship between the density of oxygen atoms and the time after discharge in the vicinity of the borosilicate glass hemisphere in Example 1, for each case where the pressure in the plasma generation chamber is 20 kPa, 30 kPa, 50 kPa, 70 kPa, or 95 kPa. [Figure 4] This figure shows the relationship between the pressure inside the plasma generation chamber and the density of oxygen atoms near the stainless steel needle, and the relationship between the pressure inside the plasma generation chamber and the density of oxygen atoms near the borosilicate glass hemisphere in Example 1. [Figure 5]It is a diagram showing the relationship between the pressure in the plasma generation chamber and the amount of oxygen atom flux in the vicinity of a stainless steel needle, and the relationship between the pressure in the plasma generation chamber and the amount of oxygen atom flux in the vicinity of a borosilicate glass hemisphere in Example 1. [Figure 6] It is a diagram showing the results of measuring the sterilization rate of Escherichia coli by Example 1, atmospheric pressure plasma treatment, and ozone treatment. [Figure 7] It is a schematic diagram showing the pathogen inactivation device used in Example 2. [Figure 8] It is a schematic diagram showing the pathogen inactivation device used in Example 3. [Figure 9] It is a diagram showing the flow of the pathogen inactivation treatment in Example 3.

Mode for Carrying Out the Invention

[0010] An embodiment of a pathogen inactivation device and a pathogen inactivation method according to an embodiment of the present invention will be described. Note that this embodiment is specifically described to better understand the gist of the invention, and does not limit the present invention unless otherwise specified.

[0011] It is a schematic diagram showing [pathogen inactivation device]. FIG. 1 is a schematic diagram showing the pathogen inactivation device of this embodiment. As shown in FIG. 1, the pathogen inactivation device 1 of this embodiment includes a plasma generation chamber 10, a high-voltage electrode 20, a ground electrode 30, a flow regulator 40, a vacuum pump 50, a pressure regulator 60, and a high-voltage power supply 70. <000E094><00E0095><00E0096>The plasma generation chamber 10 has a space for generating plasma at a sub-atmospheric pressure of 0.1 atm to 0.9 atm. <00E0097>The plasma generation chamber 10 houses a pathogen deposit α that is a target to be inactivated by plasma. <00E0098>The plasma generation chamber 10 is provided with a tubular gas inlet passage 11 for introducing plasma raw material gas into the plasma generation chamber 10. The end of the gas inlet passage 11 opposite the plasma generation chamber 10 is connected to a plasma raw material gas source 80, such as pure oxygen gas, via a flow regulator 40. Examples of the plasma raw material gas source 80 include a gas cylinder, a PSA (Pressure Swing Adsorption) type gas generator, or the atmosphere. The plasma generation chamber 10 is also provided with a tubular gas discharge passage 12 for drawing in (discharging) the gas inside the plasma generation chamber 10.

[0013] The high-voltage electrode 20 and the ground electrode 30 are placed inside the plasma generation chamber 10. Examples of high-voltage electrodes 20 include metal needles, spheres, flat plates, etc. Examples of grounding electrodes 30 include metals such as stainless steel balls. Alternatively, a metal covered with a dielectric material (for example, borosilicate glass) may be used as the grounding electrode. The high-voltage electrode 20 and the ground electrode 30 are arranged to face each other. The distance between the high-voltage electrode 20 and the ground electrode 30 is not particularly limited, but is, for example, 0.5 mm to 2.0 mm.

[0014] The flow regulator 40 is installed in the middle of the gas inlet passage 11. Examples of the flow regulator 40 include a mass flow controller and a float-type flow regulator. The flow regulator 40 adjusts the flow rate of the plasma raw material gas (e.g., pure oxygen gas) from the plasma raw material gas source 80 to introduce the plasma raw material gas into the plasma generation chamber 10.

[0015] The pressure reducing pump 50 is installed in the middle of the gas discharge passage 12. An example of the pressure reducing pump 50 is a diaphragm pump. Furthermore, a pressure regulator 60 is provided between the plasma generation chamber 10 and the depressurizing pump 50 in the middle of the gas discharge passage 12. The pressure inside the plasma generation chamber 10 is adjusted by a pressure reducing pump 50 and a pressure regulator 60 (for example, a needle valve).

[0016] The high-voltage power supply 70 is connected to the high-voltage electrode 20 and the ground electrode 30. Examples of the high-voltage power supply 70 include a high-voltage pulse generator and a high-voltage waveform amplifier.

[0017] The operation of the pathogen inactivation device 1 of this embodiment will now be described. Plasma raw material gas, adjusted to a predetermined flow rate using a flow regulator 40, is introduced into the plasma generation chamber 10. The pressure inside the plasma generation chamber 10 is adjusted to 0.1 to 0.9 atmospheres by the decompression pump 50 and the pressure regulator 60. Preferably, the pressure inside the plasma generation chamber 10 is between 0.4 and 0.6 atmospheres. If the pressure inside the plasma generation chamber 10 is less than 0.1 atmospheres, the amount of radicals generated decreases significantly compared to atmospheric pressure. If the pressure inside the plasma generation chamber 10 exceeds 0.9 atmospheres, the lifetime of the radicals becomes about the same as that of atmospheric pressure. Therefore, outside the range of 0.1 to 0.9 atmospheres, the total amount of radicals acting on pathogen-laden substances decreases, and the effect of pathogen inactivation is reduced. The high voltage generated by the high-voltage power supply 70 is applied to the high-voltage electrode 20. This generates a discharge plasma P between the high-voltage electrode 20 and the ground electrode 30. As a result, plasma is generated in the plasma generation chamber 10, producing oxidative radicals that inactivate pathogens attached to the target object.

[0018] According to the pathogen inactivation device 1 of this embodiment, plasma is generated in the plasma generation chamber 10 at near-atmospheric pressure of 0.1 to 0.9 atmospheres, which suppresses the ineffective consumption of radicals and results in excellent energy efficiency of the process. Therefore, the turnover rate of the pathogen inactivation process can be improved. Furthermore, if the plasma generation chamber 10 is considered as a single room, pathogens present throughout that room can be inactivated.

[0019] [Pathogen inactivation method] The pathogen inactivation method of this embodiment is a pathogen inactivation method using the pathogen inactivation apparatus of this embodiment, wherein the target object is placed in a plasma generation chamber, the pressure in the plasma generation chamber is adjusted to 0.1 atmospheres to 0.9 atmospheres, a discharge plasma is generated between a high-pressure electrode and a ground electrode, plasma is generated in the plasma generation chamber to produce oxidative radicals, and pathogens attached to the target object are inactivated.

[0020] In the pathogen inactivation method of this embodiment, for example, the pathogen inactivation apparatus 1 described above is used. The objects to be inactivated by pathogens are not particularly limited and include, for example, clothing, bedding, medical equipment, tableware, food, etc.

[0021] In the pathogen inactivation method of this embodiment, first, the target object is placed inside the plasma generation chamber 10. In this state, the pressure inside the plasma generation chamber 10 is adjusted to 0.1 to 0.9 atmospheres using the decompression pump 50 and the pressure regulator 60. Preferably, the pressure inside the plasma generation chamber 10 is between 0.4 and 0.6 atmospheres. If the pressure inside the plasma generation chamber 10 is less than 0.1 atmospheres, the amount of radicals generated decreases significantly compared to atmospheric pressure. If the pressure inside the plasma generation chamber 10 exceeds 0.9 atmospheres, the lifetime of the radicals becomes about the same as that of atmospheric pressure. Note that 1 atmosphere is equal to 1013.25 hPa (101.325 kPa). In other words, the pressure inside the plasma generation chamber 10 is preferably between 101.325 hPa (10.1325 kPa) and 911.925 hPa (91.1925 kPa), and between 405.3 hPa (40.53 kPa) and 607.95 hPa (60.795 kPa).

[0022] The atmosphere inside the plasma generation chamber 10 is composed of plasma raw material gas supplied from the plasma raw material gas source 80. Examples of plasma raw material gases include oxygen (O2) and nitrogen (N2). The plasma raw material gas may also contain helium (He) or argon (Ar).

[0023] With the pressure inside the plasma generation chamber 10 adjusted to 0.1 to 0.9 atmospheres, a high voltage generated by the high-voltage power supply 70 is applied to the high-voltage electrode 20, generating a discharge plasma P between the high-voltage electrode 20 and the ground electrode 30. This generates plasma inside the plasma generation chamber 10, producing oxidative radicals that inactivate pathogens attached to the target object.

[0024] Now, let's explain inactivation. Inactivation refers to killing pathogens (removing their infectivity) using heat, ultraviolet light, chemicals, etc. Examples of pathogens include influenza viruses, coronaviruses, and pathogenic bacteria (such as Clostridium botulinum and pathogenic E. coli).

[0025] Among the radicals generated in atmospheric pressure plasma and near-atmospheric pressure plasma, oxygen atoms and OH radicals are the main oxidizing radicals. OH radicals are generated by the dissociation of water molecules. However, the upper limit of water vapor density in the plasma source gas is only a few percent, and the density of OH radicals generated in near-atmospheric pressure plasma is about 1 / 100 to 1 / 10 of that of oxygen atoms. Therefore, oxygen atoms can be said to be an important radical. Since oxygen atoms are produced by the dissociation of oxygen molecules, oxygen atoms can be efficiently generated by significantly including oxygen molecules in the plasma source gas.

[0026] Since ozone is produced by the reaction of oxygen atoms and oxygen molecules, the density of oxygen atoms and ozone produced with a given energy input is approximately the same (assuming no oxygen atom consumption). Therefore, if the generated oxygen atoms can be used to act on the target object without being wasted, the energy required for treatment by the pathogen inactivation method of this embodiment can be reduced to the same level as that required for ozone treatment.

[0027] Experiments have shown that in near-atmospheric pressure plasma, the lifetime of oxygen atoms is extended several times compared to atmospheric pressure, while the oxygen atom density is almost the same as or greater than atmospheric pressure at 0.3 to 0.9 atmospheres. Therefore, it is believed that using near-atmospheric pressure plasma results in several times more radicals acting on pathogens with the same energy input as atmospheric pressure plasma treatment or ozone generation, significantly improving the inactivation rate. Thus, comparing inactivation rates, near-atmospheric pressure plasma >> atmospheric pressure plasma >> ozone >> ultraviolet light, allowing for pathogen inactivation at a high turnover rate.

[0028] According to the pathogen inactivation method of this embodiment, plasma is generated in the plasma generation chamber 10 at near-atmospheric pressure of 0.1 to 0.9 atmospheres, which suppresses the ineffective consumption of radicals and results in excellent energy efficiency of the process. Therefore, the turnover rate of the pathogen inactivation process can be improved.

[0029] It should be noted that the technical scope of the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention.

[0030] Furthermore, without departing from the spirit of the present invention, the components in the above embodiments may be replaced with well-known components as appropriate, and the above-described modifications may be combined as appropriate. [Examples]

[0031] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

[0032] [Example 1] Figure 1 shows the pathogen inactivation device 1. A plasma generation chamber 10 measuring 150mm wide x 150mm deep x 200mm high was used. Inside the plasma generation chamber 10, a stainless steel needle with an outer diameter of 0.05 mm was installed as the high-voltage electrode 20, and a stainless steel sphere with a diameter of 15 mm was covered with a borosilicate glass hemisphere that was 0.5 mm thick and had a radius of 10 mm, which served as the ground electrode 30. The distance between the high-voltage electrode 20 and the ground electrode 30, that is, the distance between the tip of the stainless steel needle and the borosilicate glass hemisphere, was set to 1.0 mm. Pure oxygen gas, adjusted to a flow rate of 2 L / min using a flow regulator (mass flow controller, model name: MC-11RC, manufactured by Lintec) 40, was introduced into the plasma generation chamber 10. The pressure inside the plasma generation chamber 10 was adjusted to 20kPa, 30kPa, 50kPa, 70kPa, and 95kPa using a depressurizing pump (model name: DTC-60, manufactured by ULVAC KIKO) 50 and a pressure regulator 60. A high voltage generated by a high-voltage power supply with a pulse width of 300 ns (model name: MPC3010S-50SP, manufactured by Suematsu Electronics Co., Ltd.) 70 or a high-voltage power supply with a pulse width of 35 ns (model name: CUS3000TT-1KESP, manufactured by Suematsu Electronics Co., Ltd.) 70 was applied to the high-voltage electrode 20. Furthermore, the high-voltage power supply 70 was used to adjust the discharge energy in the plasma generation chamber 10 to 3 mJ.

[0033] The relationship between oxygen atom density and time after discharge was investigated near a stainless steel needle (0.2 mm from the tip of the stainless steel needle toward the borosilicate glass hemisphere) for each of the following pressures in the plasma generation chamber 10: 20 kPa, 30 kPa, 50 kPa, 70 kPa, and 95 kPa. The results are shown in Figure 2. In addition, the relationship between oxygen atom density and elapsed time from the start of discharge was investigated near the borosilicate glass hemisphere (0.8 mm from the tip of the stainless steel needle toward the borosilicate glass hemisphere) for each of the following pressures in the plasma generation chamber 10: 20 kPa, 30 kPa, 50 kPa, 70 kPa, and 95 kPa. The results are shown in Figure 3. As shown in Figure 2, it was found that near the stainless steel needle, the density of oxygen atoms increased 3 μs after the end of the discharge when the pressure inside the plasma generation chamber 10 was between 50 kPa and 95 kPa. Furthermore, as shown in Figure 3, it was found that near the borosilicate glass hemisphere, the density of oxygen atoms increased 3 μs after the end of the discharge when the pressure inside the plasma generation chamber 10 was between 50 kPa and 70 kPa.

[0034] Figure 4 shows the relationship between the pressure inside the plasma generation chamber 10 and the density of oxygen atoms near the borosilicate glass hemisphere, and the relationship between the pressure inside the plasma generation chamber 10 and the half-life of oxygen atoms near the borosilicate glass hemisphere. It was found that the density of oxygen atoms near the borosilicate glass hemisphere was high when the pressure inside the plasma generation chamber 10 was between 50 kPa and 70 kPa. Furthermore, it was found that when the pressure inside the plasma generation chamber 10 was between 30 kPa and 95 kPa, the half-life of oxygen atoms increased as the pressure decreased.

[0035] Figure 5 shows the relationship between the pressure inside the plasma generation chamber 10 and the amount of oxygen atom flux near the stainless steel needle, and the relationship between the pressure inside the plasma generation chamber 10 and the amount of oxygen atom flux near the borosilicate glass hemisphere. Near the stainless steel needle, it was found that the amount of oxygen atom flux decreased as the pressure inside the plasma generation chamber 10 increased. On the other hand, near the borosilicate glass hemisphere, when the pressure inside the plasma generation chamber 10 was between 20 kPa and 50 kPa, the amount of oxygen atom flux increased as the pressure inside the plasma generation chamber 10 increased, and when the pressure inside the plasma generation chamber 10 was between 50 kPa and 95 kPa, the amount of oxygen atom flux decreased as the pressure inside the plasma generation chamber 10 increased. Note that a large amount of oxygen atom flux indicates a large time integral value of oxygen atom density, and a small amount of oxygen atom flux indicates a small time integral value of oxygen atom density.

[0036] Based on the results in Figures 4 and 5, the pressure range within the plasma generation chamber 10 in which the amount of oxygen atom flux is greater than 95 kPa near the stainless steel needle is defined as the optimal pressure range within the plasma generation chamber 10 for the pathogen inactivation method. Furthermore, based on the results in Figures 4 and 5, the pressure range within the plasma generation chamber 10 in which the amount of oxygen atom flux is greater than 95 kPa near the borosilicate glass hemisphere is defined as the optimal pressure range within the plasma generation chamber 10 for the pathogen inactivation method.

[0037] To compare this example 1 with atmospheric pressure plasma treatment and ozone treatment in pathogen inactivation, the sterilization rate of E. coli by each treatment was measured. The target of treatment was E. coli, measured at 2 × 10⁶. 8 A suspension was prepared to a concentration of CFU / mL. In the treatment based on this embodiment 1, the pressure in the plasma generation chamber was set to 50 kPa, the discharge energy to 2 mJ, the discharge repetition frequency to 10 Hz, and the plasma raw material gas to pure oxygen. In atmospheric pressure plasma treatment, the pressure in the plasma generation chamber was set to 101 kPa, the discharge energy to 2 mJ, the discharge repetition frequency to 10 Hz, and the plasma raw material gas to pure oxygen. In ozone treatment, the ozone gas concentration was set to 3 × 10⁻⁶ 16 pieces / cm 3 In this example, the power consumption of the discharge in atmospheric pressure plasma treatment and ozone treatment was 20mW, 20mW, and 200mW, respectively. Figure 6 shows the relationship between the treatment time and the survival rate of E. coli in each treatment. From the results in Figure 6, it was found that atmospheric pressure plasma treatment could inactivate E. coli in about 1 / 3 the time of ozone treatment, and the near-atmospheric pressure plasma treatment in this example could inactivate E. coli in about 1 / 5 the time of ozone treatment. In other words, according to this example, pathogens can be inactivated at five times the speed of conventional ozone treatment.

[0038] [Example 2] A pathogen inactivation device 100, shown in Figure 7, was used. In the pathogen inactivation device 100 shown in Figure 7, the same reference numerals are used for parts that are the same as those in the pathogen inactivation device 1 shown in Figure 1, and their descriptions are omitted. Only the differences are described. In the pathogen inactivation device 100, a portion of the wall surface (the bottom surface in Figure 7) is composed of pathogen-contaminated material α to be treated. The portion of the pathogen-contaminated material α to which the pathogen is attached (pathogen-contaminated portion) β is exposed into the plasma generation chamber 10. According to this embodiment 2, even if the pathogen-attached material α is large and cannot be contained within the plasma generation chamber 10, the pathogen can be inactivated by applying near-atmospheric pressure plasma treatment to the pathogen-attached portion β. In the pathogen inactivation device 100, a metal electrode is placed on the opposite side of the high-voltage electrode 20 via the pathogen-contaminated material α, and this metal electrode is used as the ground electrode 30. However, if the pathogen-contaminated material α is metal, the pathogen-contaminated material α itself may be used as the ground electrode. Although not shown in Figure 7, a packing or the like may be placed between the plasma generation chamber 10 and the pathogen-laden material α to suppress gas leakage between the plasma generation chamber 10 and the pathogen-laden material α.

[0039] [Example 3] The pathogen inactivation device 200 shown in Figure 8 was used. In the pathogen inactivation device 200 shown in Figure 7, the same reference numerals are used for parts that are the same as those in the pathogen inactivation device 1 shown in Figure 1, and their descriptions are omitted. Only the differences are described. The pathogen inactivation device 200 is equipped with a memory device 210 that stores the pressure conditions under which the radical flux of the near-atmospheric pressure plasma treatment is maximized. The memory device 210 controls the pressure regulator 60 with the aforementioned pressure conditions as the target. If, for example, a needle valve is used as the pressure regulator 60, it takes a long time to reach the target pressure if the valve opening is constant. According to this embodiment 3, the time to reach the target pressure can be greatly reduced by controlling the valve opening. Near-atmospheric pressure plasma treatment requires a step of reducing the pressure in the plasma generation chamber 10 before treatment (depressurization step) and a step of restoring the pressure in the plasma generation chamber 10 to atmospheric pressure after treatment (atmospheric pressure recovery step) (Figure 9). According to this embodiment 3, the time required for the depressurization step and the atmospheric pressure recovery step can be shortened, and the time required per treatment can be reduced, thereby improving the turnover rate of treatment. [Explanation of symbols]

[0040] 1, 100, 200 pathogen inactivation device 10 Plasma generation chamber 11 Gas inlet 12 Gas discharge channels 20 High-voltage electrode 30 Ground electrode 40 Flow regulator 50 Pressure Reducing Pumps 60 Pressure Regulator 70 High-voltage power supply 80 Plasma raw material gas source

Claims

1. Plasma generation chamber, One or more electrodes are arranged facing each other with a distance between them in the plasma generation chamber, A flow regulator for adjusting the flow rate of the plasma raw material gas flowing into the plasma generation chamber, A pressure reducing pump and a pressure regulator for adjusting the pressure inside the plasma generation chamber to a predetermined pressure, The device comprises a high-voltage power supply that generates a discharge plasma between the pair of electrodes, The aforementioned plasma raw material gas contains O2, The pressure reducing pump and the pressure regulator adjust the pressure inside the plasma generation chamber to between 0.1 atmospheres and 0.9 atmospheres. Pathogen inactivation device.

2. The pathogen inactivation apparatus according to claim 1, comprising a mechanism for using a pathogen-contaminated material as one electrode in the plasma generation chamber and generating discharge plasma between the other electrode and the pathogen-contaminated material.

3. The pathogen inactivation apparatus according to claim 1, further comprising a mechanism for bringing discharge plasma into contact with a portion of the wall surface of the plasma generation chamber, wherein a portion of the wall surface is treated as a pathogen-adhering material.

4. The system comprises a memory device that stores conditions for maximizing the amount of oxygen atoms acting on pathogen-laden substances, and a pressure gauge that measures the pressure inside the plasma generation chamber. The pathogen inactivation apparatus according to claim 1, further comprising a mechanism for adjusting the pressure in the plasma generation chamber with respect to the optimal pressure conditions output from the memory device.

5. A method for inactivating pathogens using a pathogen inactivation device according to any one of claims 1 to 4, A method for inactivating pathogens, comprising: placing an object in the plasma generation chamber; adjusting the pressure in the plasma generation chamber to 0.1 atmospheres to 0.9 atmospheres; generating discharge plasma between the pair of electrodes; generating plasma in the plasma generation chamber to produce oxygen atoms, which are oxidative radicals, and inactivating pathogens attached to the object.

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