Sputtering target mechanism, film deposition apparatus, and film deposition method

Abstract

To provide a sputtering target mechanism suppressing a variation in a film quality in plane of a substrate, a film deposition apparatus, and a film deposition method.SOLUTION: A sputtering target mechanism includes a sputtering target and a magnetic field generation mechanism. The sputtering target includes a first main surface of discharging a sputtering particle, and a second main surface opposite to the first main surface. The magnetic field generation mechanism has multiple magnetic circuit parts that face the second main surface and are arranged in parallel in one axis direction in a non-contact manner, and a transportation mechanism capable of changing a distance between at least one pair of the magnetic circuit part and a distance between multiple magnetic circuit parts and the sputtering target.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a sputtering target mechanism, a film forming apparatus, and a film forming method.

Background Art

[0002] One of the sputtering film forming methods is the magnetron sputtering method in which a magnet is arranged behind a sputtering target to form a film. Among such film forming methods, there is a method of partially increasing or decreasing the intensity of the magnetic field leaking to the surface of the sputtering target to equalize the film quality (for example, film thickness) of the film formed on the substrate (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, when sputtering film formation is continued for a long time and the sputtering target is consumed for a long time, the distance between the magnet arranged behind the sputtering target and the sputtering target changes. As a result, the magnetic field strength on the surface of the sputtering target also changes over time.

[0005] Along with this temporal change in the magnetic field strength, the plasma state on the surface of the sputtering target changes over time, and the variation in the film quality of the film in the substrate plane may increase as the film formation time elapses. Particularly, as the substrate becomes larger, this variation becomes more prominent.

[0006] In view of the above circumstances, the object of the present invention is to provide a sputtering target mechanism, a film deposition apparatus, and a film deposition method that suppress variations in the film quality within the substrate surface even when sputtering film deposition is performed over a long period of time. [Means for solving the problem]

[0007] To achieve the above objective, a sputtering target mechanism according to one embodiment of the present invention comprises a sputtering target and a magnetic field generation mechanism. The sputtering target described above includes a first main surface that emits sputtering particles and a second main surface opposite to the first main surface. The magnetic field generation mechanism includes a plurality of magnetic circuit sections arranged in a non-contact manner in a uniaxial direction opposite to the second main surface, and a moving mechanism capable of changing the distance between at least one pair of adjacent magnetic circuit sections in a uniaxial direction and the sputtering target.

[0008] By using such a sputtering target mechanism, variations in the film quality within the substrate surface can be suppressed even when sputtering film deposition is performed over a long period of time.

[0009] In the sputtering target mechanism described above, the magnetic field generation mechanism may include a connecting portion that connects the set of magnetic circuit portions and includes a joint portion that bends between the set of magnetic circuit portions, and a moving mechanism that can move the position of the joint portion and change the distance between the joint portion and the second main surface.

[0010] By using such a sputtering target mechanism, the aforementioned moving mechanism is provided, which suppresses variations in the film quality within the substrate surface even when sputtering deposition is performed for a long period of time.

[0011] In the sputtering target mechanism described above, when the magnetic field generation mechanism is viewed from the second main surface, in the plurality of magnetic circuit sections arranged in parallel in the uniaxial direction, each of the pair of magnetic circuit sections located at both ends in the uniaxial direction may include a first magnet section with a first pole facing the second main surface and extending in the uniaxial direction, and a second magnet section with a second pole opposite to the first pole facing the second main surface, surrounding the first magnet section, and opening the first magnet section on the side of the plurality of magnetic circuit sections located between the pair of magnetic circuit sections. Each of the plurality of magnetic circuit sections arranged between the pair of magnetic circuit sections may include a third magnet section with a first pole facing the second main surface and extending in the uniaxial direction, and a pair of fourth magnet sections arranged on both sides of the third magnet section, with a second pole opposite to the first pole facing the second main surface and extending in the uniaxial direction.

[0012] By using such a sputtering target mechanism, even when sputtering film deposition is performed for a long period of time, the magnetic part mentioned above suppresses variations in the film quality within the substrate surface.

[0013] In the above-described sputtering target mechanism, the sputtering target may be a cylindrical sputtering target in which the first main surface is the outer circumferential surface and the second main surface is the inner circumferential surface, and may be configured to be rotatable around the magnetic field generation mechanism.

[0014] By using such a sputtering target mechanism, even when sputtering film deposition is performed over a long period of time, the cylindrical sputtering target suppresses variations in the film quality within the substrate surface.

[0015] To achieve the above objective, a film deposition apparatus according to one embodiment of the present invention comprises the sputtering target mechanism, a substrate support mechanism facing the sputtering target mechanism and capable of supporting a substrate on which the sputtering particles are deposited, and a vacuum vessel housing the sputtering target mechanism and the substrate support mechanism.

[0016] With this type of film deposition apparatus, even when sputtering is performed for a long period of time, variations in the film quality within the substrate surface are suppressed.

[0017] In the above-described film deposition apparatus, both ends of the sputtering target mechanism protrude from the substrate in the uniaxial direction, and at least one of the magnetic circuit sections may face the substrate at a position opposite to it.

[0018] With this type of film deposition apparatus, even when sputtering is performed for a long period of time, variations in the film quality within the substrate surface are suppressed.

[0019] To achieve the above objective, a film formation method according to one embodiment of the present invention involves placing the sputtering target mechanism opposite to a substrate, depositing the sputtering particles onto the substrate, and forming a film containing the sputtering particles on the substrate.

[0020] With this film deposition method, even if sputtering deposition is performed over a long period of time, variations in the film quality within the substrate surface are suppressed.

[0021] In the above film formation method, after forming the film on the substrate, the variation in the film quality of the film on the substrate may be determined, and when forming the film on the substrate again, the distance between at least one of the multiple joints and the second main surface may be changed to suppress the variation in film quality and form the film on the substrate.

[0022] With this film deposition method, even if sputtering deposition is performed over a long period of time, variations in the film quality within the substrate surface are suppressed. [Effects of the Invention]

[0023] As described above, the present invention provides a sputtering target mechanism, a film deposition apparatus, and a film deposition method that suppress variations in the film quality within the substrate surface even when sputtering film deposition is performed over a long period of time.

Brief Description of the Drawings

[0024] [Figure 1] It is a schematic cross-sectional view showing the sputtering target mechanism of this embodiment. [Figure 2] Figs. (a) and (b) are schematic plan views showing the arrangement of magnets included in the magnetic circuit section, and Fig. (c) is a schematic perspective view showing the arrangement. [Figure 3] It is a schematic cross-sectional view showing the film forming apparatus of this embodiment. [Figure 4] It is a schematic cross-sectional view showing the operation of the magnetic field generation mechanism. [Figure 5] It is a schematic cross-sectional view showing the operation of the magnetic field generation mechanism. [Figure 6] It is a graph for explaining an example of suppressing film quality variation.

Embodiments for Carrying Out the Invention

[0025] Hereinafter, embodiments of the present invention will be described with reference to the drawings. XYZ axis coordinates may be introduced in each drawing. Also, the same members or members having the same function may be given the same reference numerals, and the description may be omitted as appropriate after the description of such members. Further, the numerical values shown below are examples and are not limited to this example.

[0026] Fig. 1 is a schematic cross-sectional view showing the sputtering target mechanism of this embodiment. In Fig. 1, a sputtering target mechanism 1 (hereinafter referred to as target mechanism 1) and a substrate 90 are shown. The substrate 90 and the target mechanism 1 face each other. Sputtering particles emitted from the target mechanism 1 are deposited on the substrate 90.

[0027] The target mechanism 1 includes a sputtering target 20 (hereinafter referred to as target 20) and a magnetic field generation mechanism 30. The target mechanism 1 is used as a cathode electrode when performing sputtering film formation on the substrate 90 in a reduced pressure atmosphere.

[0028] The target 20 comprises a layered sputtering material 21 and a metal substrate 22 (backing plate) that supports the sputtering material 21. The target 20 includes a sputtering surface (first main surface) 201 from which sputtering particles are emitted by discharge plasma, and a back surface (second main surface) opposite to the sputtering surface 201. The sputtering surface 201 faces the substrate 90. The length of the target 20 is longer than the length of the substrate 90 in the X-axis direction, and both ends of the target 20 protrude from the substrate 90.

[0029] The sputtering material 21 includes, for example, at least one of the following: metals such as aluminum, tantalum, titanium, molybdenum, gallium, copper, nickel, chromium, nickel-chromium alloy (NiCr), copper-nickel alloy (CuNi); oxides such as indium tin oxide (ITO), niobium oxide, IGZO (oxide containing indium, gallium, zinc, and oxygen), IZO (oxide containing indium, zinc, and oxygen); and semiconductors such as silicon. Furthermore, if the sputtering material 21 and the base material 22 are made of the same material (for example, aluminum), the target 20 may be a cylindrical body in which the sputtering material 21 and the base material 22 are integrated.

[0030] The magnetic field generating mechanism 30 faces the back surface 202 of the target 20. The magnetic field generating mechanism 30 has a plurality of magnetic circuit sections 311 to 319, a plurality of connecting sections 321 to 328, a plurality of moving mechanisms 331 to 338, and a plurality of support sections 341 to 347. The moving mechanisms 331 to 338 and the support sections 341 to 347 are fixed to a base (not shown). Among the magnetic circuit sections 311 to 319, at least one magnetic circuit section faces the substrate 90 (the range in which the substrate 90 is projected onto the magnetic field generating mechanism 30 in Figure 1). For example, Figure 1 shows an example in which three magnetic circuit sections 314, 315, and 316 face the substrate 90 among the magnetic circuit sections 311 to 319. The number of magnetic circuit sections, connecting sections, and support sections illustrated is just an example and is not limited to the number shown. Furthermore, the number of magnetic circuit sections facing the substrate 90 is an example and is not limited to the number shown. For example, magnetic circuit sections 311 to 313 may be configured as a single unit, and magnetic circuit sections 317 to 319 may be configured as a single unit. That is, at least three magnetic circuit sections are arranged at positions facing the base material 22, in which case two magnetic circuit sections are arranged at both ends, and at least one magnetic circuit section is arranged between these two magnetic circuit sections.

[0031] The magnetic circuit sections 311 to 319 are arranged side by side in a non-contact manner with a predetermined clearance between them in a uniaxial direction. The magnetic circuit sections 311 to 319 face the back surface 202 of the target 20. In this embodiment, the uniaxial direction is defined as the X-axis direction. The direction perpendicular to the X-axis direction is defined as the Y-axis direction or the Z-axis direction. The Z-axis direction is the direction in which the magnetic field generation mechanism 30 faces the target 20. The Y-axis direction is perpendicular to both the X-axis direction and the Z-axis direction.

[0032] The connecting section connects at least one pair of magnetic circuit sections adjacent to each other in the X-axis direction. For example, connecting section 321 connects magnetic circuit sections 311 and 312. Connecting section 322 connects magnetic circuit sections 312 and 313. Connecting section 323 connects magnetic circuit sections 313 and 314. Connecting section 324 connects magnetic circuit sections 314 and 315. Connecting section 325 connects magnetic circuit sections 315 and 316. Connecting section 326 connects magnetic circuit sections 316 and 317. Connecting section 327 connects magnetic circuit sections 317 and 318. Connecting section 328 connects magnetic circuit sections 318 and 319.

[0033] Furthermore, each of the connecting parts 321 to 328 includes a joint that bends between a pair of magnetic circuit parts aligned in the X-axis direction. For example, connecting part 321 includes a joint 321j that bends between magnetic circuit parts 311 and 312. Connecting part 322 includes a joint 322j that bends between magnetic circuit parts 312 and 313. Connecting part 323 includes a joint 323j that bends between magnetic circuit parts 313 and 314. Connecting part 324 includes a joint 324j that bends between magnetic circuit parts 314 and 315. Connecting part 325 includes a joint 325j that bends between magnetic circuit parts 315 and 316. Connecting part 326 includes a joint 326j that bends between magnetic circuit parts 316 and 317. Connecting part 327 includes a joint 327j that bends between magnetic circuit parts 317 and 318. The connecting portion 328 includes a joint portion 328j that bends between the magnetic circuit portions 318 and 319.

[0034] The moving mechanism provided in the magnetic field generating mechanism 30 can change the distance between at least one pair of adjacent magnetic circuit sections in the X-axis direction and the target 20. For example, each of the moving mechanisms 331 to 338 can independently move the position of its joint and change the distance between the joint and the back surface 202 of the target 20. Each of the moving mechanisms 331 to 338 has a servo motor, a stepping motor, and a position detection sensor.

[0035] For example, the moving mechanism 331 moves the position of joint 321j, changing the distance between joint 321j and the back surface 202. The moving mechanism 332 moves the position of joint 322j, changing the distance between joint 322j and the back surface 202. The moving mechanism 333 moves the position of joint 323j, changing the distance between joint 323j and the back surface 202. The moving mechanism 334 moves the position of joint 324j, changing the distance between joint 324j and the back surface 202. The moving mechanism 335 moves the position of joint 325j, changing the distance between joint 325j and the back surface 202. The moving mechanism 336 moves the position of joint 326j, changing the distance between joint 326j and the back surface 202. The moving mechanism 337 moves the position of joint 327j, changing the distance between joint 327j and the back surface 202. The moving mechanism 338 moves the position of the joint 328j and changes the distance between the joint 328j and the back surface 202.

[0036] Figures 2(a) and (b) are schematic plan views showing the arrangement of magnets included in the magnetic circuit section, and Figure 2(c) is a schematic perspective view showing the same arrangement. Figure 2(a) also shows the view of one of the magnetic circuit sections 311 and 319 from the back surface 202 of the target 20, and the view of one of the magnetic circuit sections 311 and 319 when cut in the YZ axis plane (AA cross section). Figure 2(b) shows the view of one of the magnetic circuit sections 312 to 318 from the back surface 202 of the target 20, and the view of one of the magnetic circuit sections 312 to 318 when cut in the YZ axis plane (BB cross section).

[0037] In the cross-sectional views of Figures 2(a) and (b), the magnetic sections 31 and 32 and 33 and 34 are arranged in an arc shape because the target 20 is assumed to be a cylindrical rotary target. Here, if we define the side of each magnetic section 31 to 34 facing the target 20 as the front side of the magnetic sections 31 to 34, and the side of each magnetic section 31 to 34 not facing the target 20 as the back side of the magnetic sections 31 to 34, then a yoke plate (not shown) is placed on the back side of the magnetic sections 31 to 34. The magnetic sections 31 to 34 are supported from the back by the yoke plate (not shown). On the back side of the magnetic sections 31 to 34, the magnetic field lines emitted by the magnetic sections 31 to 34 are absorbed by the yoke plate, and a loop magnetic field is not formed. Note that the target 20 is not limited to a cylindrical rotary target; it may also be a planar target.

[0038] In the magnetic circuit sections 311 and 319, as shown in Figure 2(a), a magnet section 31 (first magnet section) extending in the X-axis direction and a U-shaped magnet section 32 (second magnet section) surrounding the magnet section 31 are provided. In the magnet section 32, the magnet section 31 is open on the side enclosed by the dashed line a. This side enclosed by the dashed line a corresponds to the side where the magnetic circuit sections 312 to 318 are located.

[0039] For example, facing the back surface 202 of the target 20, the south pole (first pole) of the magnet part 31 is exposed on the surface, and the north pole (second pole), opposite to the south pole, of the magnet part 32 is exposed on the surface. For example, the south pole of the magnet part 31 faces the back surface 202 of the target 20, and the north pole of the magnet part 32 faces the back surface 202 of the target 20.

[0040] The magnetic circuit section 311 and the magnetic circuit section 319 are oriented in opposite directions in the X-axis direction. That is, the side of the magnetic circuit section 311 enclosed by dashed line a and the side of the magnetic circuit section 319 enclosed by dashed line a face each other.

[0041] Furthermore, as shown in Figure 2(b), the magnetic circuit sections 312 to 318 include a magnet section 33 (third magnet section) extending in the X-axis direction and a pair of magnet sections 34 (fourth magnet sections) extending in the X-axis direction and positioned on both sides of the magnet section 33. For example, facing the back surface 202 of the target 20, the south pole of the magnet section 33 is exposed on the surface, and the north pole of the magnet section 34 is exposed on the surface. That is, the south pole of the magnet section 33 faces the back surface 202 of the target 20, and the north pole of the magnet section 34 faces the back surface 202 of the target 20.

[0042] Each of the magnetic parts 31 to 34 is, for example, a permanent magnet made of the same material. Each of the magnetic parts 31 to 34 may be constructed as a single unit or may be divided at various points.

[0043] In the magnet sections 31 and 32, magnetic field lines are emitted from the north poles at any point surrounding the south pole, and these field lines form a loop along the way, extending to the south pole adjacent to that north pole (Figure 2(c)). Similarly, in the magnet sections 33 and 34, magnetic field lines are emitted from the north poles at any point surrounding the south pole, and these field lines form a loop along the way, extending to the south pole adjacent to that north pole. As a result, a loop-shaped magnetic field 30g is formed on the target 20 side. This magnetic field 30g penetrates the target 20 and leaks to the vicinity of the sputtering surface 201 of the target 20. The position of the solid line indicated by the magnetic field 30g represents the position where the magnetic field strength is maximum.

[0044] Figure 3 is a schematic cross-sectional view showing the film deposition apparatus of this embodiment.

[0045] The film deposition apparatus 2 is, for example, a magnetron sputtering apparatus and comprises a target mechanism 1, a substrate support mechanism 91, a vacuum chamber 10, and a control device 40. In addition, the film deposition apparatus 2 is equipped with an anti-deposition plate (not shown), an exhaust mechanism, a vacuum gauge, a gas supply mechanism, and a power supply such as DC, AC, or bipolar. The target mechanism 1, the substrate 90, and the substrate support mechanism 91 are housed in the vacuum chamber 10.

[0046] In the film deposition apparatus 2, at least one target mechanism 1 is provided inside the vacuum chamber 10. As an example, in Figure 3, multiple target mechanisms 1 are arranged along the substrate 90. The target mechanism 1 is the film deposition source of the film deposition apparatus 2.

[0047] In the film deposition apparatus 2, film deposition may be performed with the positions of the substrate 90 and the target group fixed, or film deposition may be performed while either the substrate 90 or the target group moves in the Y-axis direction. Furthermore, the film deposition apparatus 2 may be a single-wafer type or part of an in-line apparatus.

[0048] The target 20 is a cylindrical target with the sputtering surface 201 as the outer surface and the back surface 202 as the inner surface. In the target 20, the sputtering material 21 and the base material 22 shown in Figure 1 are arranged concentrically. The magnetic field generation mechanism 30 is located inside the target 20. As an example, the target 20 is a so-called rotary target, which rotates around a central axis 20c and is configured to rotate around the magnetic field generation mechanism 30.

[0049] The substrate support mechanism 91 supports the substrate 90. The substrate 90 has a rectangular planar shape and includes, for example, a glass substrate with dimensions of 1800 mm to 3000 mm in the X-axis direction and 1500 mm to 3400 mm in the Y-axis direction. The substrate 90 is not limited to a plate shape, but may also be a flexible substrate that can be wound into a roll. In this case, a roll-to-roll type substrate transport mechanism is installed in the film deposition apparatus 2 instead of the substrate support mechanism 91.

[0050] The control device 40 automatically controls the rotation of the target 20, the movement mechanisms 331-338, the power supply to the target 20, the gas supply to the vacuum container 10, and the exhaust of the vacuum container 10.

[0051] In the film deposition apparatus 2, when a discharge gas is introduced into the vacuum chamber 10 and a discharge voltage is applied to the target 20, the discharge gas is ionized near the surface of the sputtering surface 201 of the target 20, and plasma is generated near the surface of the sputtering surface 201. The sputtering particles emitted from the sputtering surface 201 reach the substrate 90. As a result, a film containing the sputtering particles is formed on the substrate 90.

[0052] In addition, in the vertical direction (floor / ceiling direction) of the film deposition apparatus 2, the vertical direction may be the direction from the group of multiple target mechanisms 1 (hereinafter referred to as the target group) toward the substrate 90 (Z-axis direction), the vertical direction may be the direction in which the target groups are lined up (Y-axis direction), or the vertical direction may be the direction in which any target mechanism 1 extends (X-axis direction).

[0053] Figures 4(a) and 4(b) are schematic cross-sectional views illustrating the operation of the magnetic field generation mechanism. Figures 4(a) and 4(b) illustrate the magnetic field generation mechanism 30, which includes magnetic circuit sections 312 and 313, a connecting section 322, a joint section 322j, a moving mechanism 332, and support sections 341 and 342. The operation of the magnetic circuit sections illustrated in Figures 4(a) and 4(b) also applies to other adjacent sets of magnetic circuit sections other than magnetic circuit sections 312 and 313.

[0054] As shown in Figure 4(a), the connecting portion 322 has a link portion 322a and a link portion 322b. The link portions 322a and 322b can rotate around the joint portion 322j as a pivot point. In other words, the connecting portion 322 has a hinge mechanism. The support portion 341 has a support member 341a, a guide hole 341b, a support member 341c, and a joint portion 341j. The support portion 342 has a support member 342a, a guide hole 342b, a support member 342c, and a joint portion 342j.

[0055] For example, when the rod portion 332a of the moving mechanism 332 pushes the joint portion 322j toward the target 20, the connecting portion 322 bends so that the link portion 322a and the link portion 322b of the connecting portion 322 intersect with the joint portion 322j as the pivot point. For example, after the rod portion 332a pushes the joint portion 322j toward the target 20, the distance between the magnetic circuit portion 312 and the magnetic circuit portion 313 widens as it moves toward the target 20.

[0056] As a result, the magnetic circuit section 312 joined to the link section 322a and the magnetic circuit section 313 joined to the link section 322b bend so that they intersect each other with the joint section 322j as the pivot point.

[0057] Conversely, as shown in Figure 4(b), when the rod portion 332a pulls the joint portion 322j away from the target 20, the link portion 322a and link portion 322b of the connecting portion 322 bend in the opposite direction to the state shown in Figure 4(a), with the joint portion 322j acting as a pivot point. For example, the distance between the magnetic circuit portion 312 and the magnetic circuit portion 313 narrows as it approaches the target 20.

[0058] As a result, the magnetic circuit section 312 joined to the link section 322a and the magnetic circuit section 313 joined to the link section 322b bend to the opposite side of the state shown in Figure 4(a), with the joint section 322j as the pivot point.

[0059] In the support portion 341, a guide hole 341b is provided in the support member 341a, which is joined to the magnetic circuit portion 312, and extends in the thickness direction of the magnetic circuit portion 312. The joint portion 341j of the support portion 341 passes through the guide hole 341b. As a result, the support member 341a can rotate with the joint portion 341j as a pivot point, and the support members 341a and 341c bend with the joint portion 341j as a pivot point. In addition, the support member 341a can move in the direction in which the guide hole 341b extends.

[0060] Furthermore, in the support portion 342, a guide hole 342b is provided in the support member 342a, which is joined to the magnetic circuit portion 313, and extends in the thickness direction of the magnetic circuit portion 313. The joint portion 342j of the support portion 342 passes through the guide hole 342b. As a result, the support member 342a can rotate with the joint portion 342j as a pivot point, and the support members 342a and 342c bend with the joint portion 342j as a pivot point. In addition, the support member 342a can move in the direction in which the guide hole 342b extends.

[0061] In Figures 4(a) and 4(b), TMn refers to the distance obtained by adding or subtracting the distance the joint portion 322j is moved relative to L0(mm), when each of the magnetic circuit portions 311 to 319 is arranged parallel to the back surface 202 of the target 20, and the distance between each of the magnetic circuit portions 311 to 319 and the sputtering surface 201 of the target 20 (the initial sputtering surface 201 before use) is L0(mm) (for example, L0(mm) is a reference value and is set to 6mm to 40mm). This TMn will be described later. Note that TMn may also be defined as the distance between the back surface 202 and the joint portion 322j, not limited to the above definition.

[0062] Figures 5(a) to 5(c) are schematic cross-sectional views illustrating the operation of the magnetic field generation mechanism. Figures 5(a) to 5(c) show all of the magnetic circuit sections 312 to 319 as examples of the magnetic field generation mechanism 30. Here, the dashed lines represent the assumed positions of the loop-shaped magnetic fields 30g formed by each of the magnetic circuit sections 312 to 319 (the positions where the magnetic field is at its maximum). The magnetic fields 30g emitted from each of the magnetic circuit sections 311 to 319 leak from the back surface 202 of the target 20 to the sputtering surface 201.

[0063] If the magnetic field generating mechanism 30 is equipped with the functions illustrated in Figures 4(a) and (b), it is possible to form a configuration in which the entire group of magnetic circuit sections 311 to 319 faces the target 20 in a convex shape (Figure 5(a)), or to form a configuration in which the entire group is curved in a concave shape relative to the target 20 (Figure 5(b)), or to form a wave-shaped configuration (Figure 5(c)).

[0064] This allows the magnetic field leaking onto the sputtering surface 201 of the target 20 to be brought closer to or further away from the sputtering surface 201, depending on the location of each of the magnetic circuit sections 311 to 319.

[0065] For example, in the state shown in Figure 5(a), the position of the magnetic field 30g leaks from the sputtering surface 201 at the center of the target 20, but does not leak from the sputtering surface 201 at both ends of the target 20. As a result, the magnetic flux density is lower at both ends of the target 20 than at the center of the target 20 near the sputtering surface 201, and the plasma density near both ends of the target 20 is lower than the plasma density near the center of the target 20. Consequently, the amount of sputtering particles emitted from the center of the target 20 is greater than the amount of sputtering particles emitted from both ends of the target 20.

[0066] On the other hand, in the state shown in Figure 5(b), the position of the magnetic field 30g leaks from the sputtering surface 201 at both ends of the target 20, but does not leak from the sputtering surface 201 at the center of the target 20. As a result, the magnetic flux density is lower in the center of the target 20 than at both ends, and the plasma density near the center of the target 20 is lower than the plasma density near the ends of the target 20. Consequently, the amount of sputtering particles emitted from both ends of the target 20 is greater than the amount of sputtering particles emitted from the center of the target 20.

[0067] In this way, by independently adjusting the positions of the joints located between adjacent magnetic circuit sections in the magnetic circuit sections 311 to 319, the amount of sputtering particles emitted from the sputtering surface 201 can be appropriately adjusted according to the location on the sputtering surface 201.

[0068] In other words, even if the consumption of target 20 becomes dependent on the location of target 20, and the distance between the magnetic field generation mechanism 30 and the sputtering surface 201 changes over time according to the position of the sputtering surface 201, the magnetic field strength on the sputtering surface 201 can always be kept approximately the same at any location on the sputtering surface 201 by adjusting the position of the joint between adjacent magnetic circuit parts.

[0069] As a result, even if the consumption of target 20 varies depending on the location of target 20, the variation in the film quality (film thickness, sheet resistance, etc.) of the coating formed on the substrate 90 can be kept within a desired range by adjusting the position of the joint between adjacent magnetic circuit sections.

[0070] Furthermore, according to this embodiment, adjacent magnetic circuit sections do not form a step-like difference between them, and the intermediate portions of adjacent magnetic circuit sections bend at an obtuse angle. As a result, the magnetic field leaking onto the sputtering surface 201 of the target 20 bends at an obtuse angle between adjacent magnetic circuit sections without forming a step-like difference. Consequently, there is no steep bending of the magnetic field between adjacent magnetic circuit sections, and the plasma discharge is maintained stably between adjacent magnetic circuit sections. In addition, localized erosion is less likely to form on the sputtering surface 201 located between adjacent magnetic circuit sections.

[0071] Furthermore, if the position control of the joints 321j to 328j is performed online from outside the deposition apparatus 2 instead of offline, the magnetic field strength at the sputtering surface 201 can be adjusted without opening the vacuum chamber 10. This reduces the downtime of the deposition apparatus 2 (the time from when the deposition apparatus 2 stops until it recovers).

[0072] An example of using the film deposition apparatus 2 to keep the film quality (film thickness, sheet resistance, etc.) of the film formed on the substrate 90 within a desired range of variation is described below.

[0073] First, sputtering particles are deposited onto the substrate 90 to form a film containing the sputtering particles on the substrate 90. An example of the film formation conditions is shown below.

[0074] Target: Aluminum rotary target Discharge power: 7.4kW / m, DC discharge Pressure: 0.1 Pa (argon gas) Substrate: Glass substrate

[0075] Next, the variation in the film quality of the coating within the plane of the substrate 90 is required. The film quality can be the film thickness or the sheet resistance of the coating.

[0076] When forming the film on the substrate 90 in the next step, the distance between at least one of the multiple joints 321j to 328j aligned in the X-axis direction and the back surface 202 of the target 20 is changed to suppress variations in the film quality from the previous step. An example of suppressed variations in film quality is shown in Table 1 and Figure 6. Sheet resistance is used as an example of the film quality.

[0077] [Table 1]

[0078] Table 1 shows conditions A to D, which represent the conditions under which each of the joints 321j to 328j is moved to a predetermined position. Here, TM1 represents the distance obtained by adding or subtracting the distance moved by joint 321j from L0. That is, if joint 321j moves L1 closer to target 20, TM1 becomes L0-L1 (-L1 is a negative value), and if joint 321j moves L1 further away from target 20, TM1 becomes L0+L1 (+L1 is a positive value). Similarly, TM2 represents the distance obtained by adding or subtracting the distance the joint 322j moves relative to L0, TM3 represents the distance obtained by adding or subtracting the distance the joint 323j moves relative to L0, TM4 represents the distance obtained by adding or subtracting the distance the joint 324j moves relative to L0, TM5 represents the distance obtained by adding or subtracting the distance the joint 325j moves relative to L0, TM6 represents the distance obtained by adding or subtracting the distance the joint 326j moves relative to L0, TM7 represents the distance obtained by adding or subtracting the distance the joint 327j moves relative to L0, and TM8 represents the distance obtained by adding or subtracting the distance the joint 328j moves relative to L0.

[0079] Figure 6 is a graph showing the variation in the sheet resistance of the coating within the substrate surface. The horizontal axis represents the position of the substrate 90 in the X-axis direction, with the center of the substrate 90 being 0 mm. The vertical axis represents the normalized value of the sheet resistance R (Ω / sq.). Figure 6 also shows the positional relationship of the magnetic circuit sections 311-319 outside the graph. A large substrate with a length in the X-axis direction of 2200 mm is used as the substrate 90. The variation in sheet resistance (%) for conditions A-D shown in Figure 6 was calculated using the formula ((maximum value - minimum value) / (maximum value + minimum value)) × 100% of the sheet resistance R. For example, a target value of 3% is set for the variation in sheet resistance.

[0080] As shown in Figure 6, under condition A, where TM1 to TM8 were uniformly set to L0 (mm), the difference in sheet resistance between the center and both ends of the substrate 90 became significant, resulting in a sheet resistance variation of 8.0%. Under condition A, the sheet resistance in the center of the substrate 90 was relatively higher than that in the ends.

[0081] To keep the sheet resistance in the central part of this substrate 90 low, under condition B, TM1, TM2 and TM7, TM8 were left at L0 (mm), while TM3 to TM6 were extended to +L1, up to +2mm. As a result, the variation in sheet resistance was reduced to 4.2%.

[0082] Furthermore, to keep the sheet resistance in the central area low, under condition C, TM1, TM2 and TM7, TM8 were left at L0 (mm), while TM3 to TM6 were extended to +L1, up to +4mm. This reduced the variation in sheet resistance to 3.6%.

[0083] Furthermore, to correct the drop in sheet resistance in the central area observed under condition C, under condition C, TM1, TM2 and TM7, TM8 were kept at L0 (mm), TM3, TM6 were kept at +L1 (+4mm), and TM4, TM5 were returned to +L1 (+3mm). By doing so, the variation in sheet resistance was reduced to 2.6%, below the target value (3%).

[0084] Thus, by using the target mechanism 1 provided in the film deposition apparatus 2, even when using a large substrate 90, the film quality of the coating formed on the substrate 90 can be kept within the desired range of variation by appropriately adjusting the magnetic field strength leaking from the magnetic field generation mechanism 30 to the surface of the sputtering surface 201 of the target 20 according to the location on the sputtering surface 201.

[0085] If the above film deposition method is applied when the target 20 is consumed, the amount of target 20 consumed will depend on the location of the target 20. Even if the distance between the magnetic field generation mechanism 30 and the sputtering surface 201 changes over time according to the position of the sputtering surface 201, the magnetic field strength on the sputtering surface 201 can always be kept approximately the same at any location on the sputtering surface 201 by adjusting the position of the joint between adjacent magnetic circuit parts.

[0086] As a result, even if the consumption of target 20 varies depending on the location of target 20, the variation in the film quality (film thickness, sheet resistance, etc.) of the coating formed on the substrate 90 can be kept within a desired range by adjusting the position of the joint between adjacent magnetic circuit sections.

[0087] Although embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the embodiments described above and can be modified in various ways. Each embodiment is not necessarily an independent form and can be combined as much as technically possible. [Explanation of symbols]

[0088] 1…Target mechanism (sputtering target mechanism) 2...Film deposition equipment 10...Vacuum container 20...Target (sputtering target) 20c…Central axis 21…Sputtering material 22...Base material 30…Magnetic field generation mechanism 30g...Magnetic field 31, 32, 33, 34...Magnetic part 40…Control device 90... Circuit board 91...Substrate support mechanism 201...Sputtering surface 202…Back side 311, 312, 313, 314, 315, 316, 317, 318, 319... Magnetic circuit section 321, 322, 323, 324, 325, 326, 327, 328...Connection part 321j, 322j, 323j, 324j, 325j, 326j, 327j, 328j, 341j, 342j... Joints 322a, 322b... Link section 331, 332, 333, 334, 335, 336, 337, 338...Movement mechanism 332a...Rod section 341, 342, 343, 344, 345, 346, 347...Support part 341b, 342b… Guide holes 341a, 341c, 342a, 342c... Support members

Claims

1. A sputtering target including a first main surface that emits sputtering particles and a second main surface opposite to the first main surface, A plurality of magnetic circuit sections are arranged in a non-contact manner in a uniaxial direction, facing the second main surface, A plurality of connecting portions, each including an articulated portion that is provided between the plurality of magnetic circuit portions and bends between adjacent magnetic circuit portions in the uniaxial direction, A magnetic field generating mechanism having a plurality of moving mechanisms, each including a rod portion capable of pushing the joint portion toward the second main surface or pulling it away from the second main surface, and the distance between the joint portion and the second main surface can be changed by moving the position of the joint portion. A sputtering target mechanism equipped with the following features.

2. A sputtering target mechanism according to claim 1, When the magnetic field generation mechanism is viewed from the second main surface, in the plurality of magnetic circuit sections arranged in parallel in the uniaxial direction, Each of the pair of magnetic circuit sections arranged at both ends in the uniaxial direction is, The first pole faces the second main surface, and the first magnet portion extends in the uniaxial direction, The second pole opposite to the first pole faces the second main surface, surrounds the first magnet portion, and the second magnet portion is open on the side of the multiple magnetic circuit portions arranged between the pair of magnetic circuit portions. Includes, Each of the plurality of magnetic circuit sections arranged between the pair of magnetic circuit sections is The first pole faces the second main surface, and the third magnet portion extends in the uniaxial direction, A second pole opposite to the first pole faces the second main surface, extends in the uniaxial direction, and a pair of fourth magnet portions are arranged on both sides of the third magnet portion. A sputtering target mechanism including a sputtering target mechanism.

3. A sputtering target mechanism according to claim 1 or 2, The sputtering target is a cylindrical sputtering target in which the first main surface is the outer circumferential surface and the second main surface is the inner circumferential surface, and is configured to be rotatable around the magnetic field generating mechanism. Sputtering target mechanism.

4. A sputtering target including a first main surface that emits sputtering particles and a second main surface opposite to the first main surface, A sputtering target mechanism having a magnetic field generating mechanism having a plurality of magnetic circuit portions arranged in a non-contact manner in a uniaxial direction facing the second main surface, a plurality of connecting portions provided between the plurality of magnetic circuit portions and each including a joint portion that bends between adjacent magnetic circuit portions in the uniaxial direction, and a plurality of moving mechanisms each including a rod portion that can push the joint portion toward the second main surface or pull it away from the second main surface, and which can change the distance between the joint portion and the second main surface by moving the position of the joint portion, A substrate support mechanism facing the sputtering target mechanism and capable of supporting the substrate on which the sputtering particles are deposited, A vacuum vessel housing the sputtering target mechanism and the substrate support mechanism A film deposition apparatus equipped with the following.

5. A film deposition apparatus according to claim 4, In the aforementioned uniaxial direction, both ends of the sputtering target mechanism protrude from the substrate. At a position facing the substrate, at least one of the magnetic circuit portions is positioned opposite to it. Film deposition equipment.

6. A sputtering target mechanism is provided facing a substrate, comprising: a sputtering target including a first main surface for emitting sputtering particles and a second main surface opposite to the first main surface; a plurality of magnetic circuit sections facing the second main surface and arranged non-contact in a uniaxial direction; a plurality of connecting sections provided between the plurality of magnetic circuit sections and each including a joint section that bends between adjacent magnetic circuit sections in the uniaxial direction; and a plurality of moving mechanisms each including a rod section capable of pushing the joint section toward the second main surface or pulling it away from the second main surface, thereby changing the distance between the joint section and the second main surface by moving the position of the joint section. The sputtering particles are deposited onto the substrate to form a coating containing the sputtering particles on the substrate. Film formation method.

7. A film formation method according to claim 6, After forming the coating on the substrate, the variation in the film quality of the coating on the substrate is determined. When forming the coating on the substrate again, the distance between at least one of the joints of the plurality of connecting parts and the second main surface is changed to form the coating on the substrate. Film formation method.

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