Substrate holding device, exposure device, and method for manufacturing articles

Abstract

To provide a substrate holding device and an exposure device with easy control of temperature distribution in a substrate holding unit.SOLUTION: The substrate holding device has a substrate holding unit that holds a substrate. The substrate holding unit has an annular temperature regulating unit, an annular temperature diffusion region that includes the temperature regulating unit and permits temperature diffusion from the temperature regulating unit, an annular suppression structure that is arranged adjacent to the temperature diffusion region and suppresses temperature diffusion from the temperature regulating unit, and a suppression region that includes the suppression structure and in which the temperature diffusion from the temperature regulating unit is suppressed.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate holding device, an exposure device, and a method for manufacturing an article.

Background Art

[0002] As a method for manufacturing articles such as semiconductor devices and MEMS, photolithography technology is known. In photolithography technology, a fine pattern (structure) on the order of several nanometers formed in a mold can be formed in a region (shot region) on a substrate.

[0003] At this time, it is important to align the position and shape of such a structure and the shot region.

[0004] Therefore, in Citation 1, an apparatus has been proposed that changes the height of the surface of the substrate held by the substrate holding portion by applying heat to the substrate holding portion that holds the substrate, and corrects the shape of the shot region.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, as described in Patent Document 1, when shape correction is performed by heating, there is a risk that unintended shape deformation may occur due to heat diffusion.

[0007] Therefore, an object of the present invention is to provide a substrate holding device in which temperature distribution control of the substrate holding portion is easy.

Means for Solving the Problems

[0008] To achieve that objective, the substrate holding device, as one aspect of the present invention, A substrate holding device having a substrate holding portion for holding a substrate, The substrate holding portion is An annular temperature control section, The temperature control unit is included, and an annular temperature diffusion region allows temperature diffusion from the temperature control unit. and, An annular suppression structure, positioned adjacent to the temperature diffusion region, which suppresses temperature diffusion from the temperature control unit, A suppression region including the suppression structure, in which temperature diffusion from the temperature control section is suppressed, It has, The suppression region is located inside the annular temperature diffusion region, The temperature diffusion region is positioned to be in contact with the outer periphery of the wafer substrate, and the suppression region is positioned to be in contact with the inside of the outer periphery of the wafer substrate. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a substrate holding device and an exposure device that allow for easy control of the temperature distribution of the substrate holding portion. [Brief explanation of the drawing]

[0010] [Figure 1] This figure shows an exposure apparatus according to the first embodiment. [Figure 2] These are a top view and a cross-sectional view of the substrate holding portion of the first embodiment. [Figure 3] This is a schematic diagram illustrating the manufacturing method of an article. [Modes for carrying out the invention]

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0012] <First Embodiment> Figure 1 is a diagram of an exposure apparatus equipped with a substrate holding device according to the first embodiment. The exposure apparatus 100 can be used for manufacturing devices such as semiconductor devices as articles, and in this embodiment, it is described as a lithography apparatus that performs exposure processing to form a pattern on a substrate. The exposure apparatus 100 is a so-called imprint apparatus that forms a pattern on a cured product by applying curing energy to a curable composition supplied onto a substrate, thereby transferring the pattern of the mold. However, it may also be an exposure apparatus that uses a mask to expose a resist on a substrate.

[0013] The exposure apparatus 100 includes a substrate holder 2 for holding the substrate 1, a stage 3 for holding the substrate holder 2 and moving it in a horizontal plane, a stage platen 4 on which the stage 3 is placed, an exposure means 5, a measuring instrument 6, and a controller 7. In addition, a vibration isolater (not shown) is placed on a base platen (not shown) supported from the floor, and the vibration isolater supports the stage platen 4. The vibration isolater reduces vibrations transmitted from the floor to the stage platen 4. Furthermore, the exposure apparatus 100 also includes a substrate transport unit (not shown) for transporting the substrate 1 from the outside to the stage 3.

[0014] The substrate 1 is formed from glass, ceramics, metal, semiconductor, resin, etc., and if necessary, a component made of a different material from the substrate may be formed on its surface. Specifically, the substrate includes silicon wafers, compound semiconductor wafers, quartz glass, etc. On the surface of the substrate 1, there is a region (shot region) to which the pattern of the mold should be transferred, and marks may be formed on the shot to enable the measurement of its strain.

[0015] For the cured material, a curable composition (sometimes referred to as an uncured resin) that cures when energy for curing is applied is used. As the energy for curing, electromagnetic waves, heat, etc. are used. As the electromagnetic waves, for example, light such as infrared rays, visible light, and ultraviolet rays whose wavelength is selected from the range of 10 nm or more and 1 mm or less is used. The cured material may be applied in a film form on the substrate by a spin coater or a slit coater. Further, the cured material may be applied on the substrate in a droplet form, or in an island or film form formed by connecting a plurality of droplets by a liquid ejection head. The viscosity of the cured material (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less. <s

[0016] The substrate holding part 2 holds the substrate 1 by attracting the substrate 1 by vacuum adsorption or electrostatic force. For example, when the substrate holding part 2 holds the substrate 1 by vacuum adsorption force, the substrate holding part 2 is connected to a vacuum pump installed outside, and the attachment / detachment (holding and release of holding) of the substrate 1 is switched by the on / off of such a vacuum pump.

[0017] The substrate holding part 2 has an annular temperature adjusting part 21, an annular temperature diffusion region that includes the temperature adjusting part 21 and allows temperature diffusion from the temperature adjusting part, and an annular suppression structure that is arranged adjacent to the temperature diffusion region and suppresses temperature diffusion from the temperature adjusting part 22, and a suppression region that includes the suppression structure 22 and suppresses temperature diffusion from the temperature adjusting part.

[0018] In addition, it is preferable to have a dissimilar material part 23 and a temperature measuring part 24.

[0019] The temperature control unit 21 may consist of either a heating unit 21a or a cooling unit 21b, or both. The heating unit 21a may be, for example, a heating wire embedded inside the substrate holding unit 2, or a high-temperature fluid flowing through a channel formed inside the substrate holding unit 2, or other means. The heating unit 21a may also be provided on the outside in contact with the substrate holding unit 2. The cooling unit 21b may be, for example, a low-temperature fluid flowing through a channel formed inside the substrate holding unit 2, or a Peltier element provided on the outside in contact with the substrate holding unit 2, or other means.

[0020] The temperature adjustment unit 21 forms a temperature gradient inside the substrate holding unit 2. The temperature adjustment unit 21 and the suppression structure are arranged so that a temperature gradient is generated in the direction from the inside to the outside of the annular temperature diffusion region. For example, when multiple heating wires are used in the heating unit 21a, the temperature gradient formed inside the substrate holding unit 2 can be changed by switching the heating wires through which the current flows and the magnitude of the current. Since the substrate holding unit 2 expands due to thermal expansion with temperature changes, the thickness of the substrate holding unit 2 has a gradient according to the temperature gradient. The temperature adjustment unit 21 is controlled by the control unit described later, and the shape of the substrate holding unit 2 can be controlled by applying an appropriate temperature gradient.

[0021] When the substrate holder 2 holds the substrate 1, the shape of the substrate 1 is affected by the shape of the surface of the substrate holder 2; therefore, controlling the shape of the substrate holder 2 leads to controlling the shape of the substrate 1. The suppression structure 22 may be, for example, a hollow structure, or it may be composed of porous material or other materials with different thermal conductivity. The thermal conductivity of the material should be 10% or more different from that of the surrounding material, more preferably 50% or more. The suppression structure 22 prevents heat that has flowed into the substrate holder 2 by the temperature adjustment unit 21 from moving to unintended locations on the substrate holder 2. The dissimilar material part 23 may be composed of, for example, materials with different coefficients of linear expansion. The coefficient of linear expansion should be 10% or more different from that of the surrounding material, more preferably 50% or more. If a material with a small coefficient of linear expansion is used, deformation of the substrate holder 2 can be suppressed even if the temperature of unintended locations on the substrate holder 2 changes. The temperature measuring unit 24 may be attached to any location so that the temperature at one or more points on the substrate holder 2 can be measured. The temperature information acquired by the temperature measurement unit 24 may be transmitted to the control unit 7 (described later) and used to control the temperature adjustment unit 21.

[0022] Figure 2(a) is a top view of an example of the configuration of the substrate holding section 2, and Figure 2(b) shows a cross-sectional view thereof. The substrate holding section 2 includes an annular temperature adjustment section 21 (21a and 21b), an annular temperature diffusion region (region B) including the temperature adjustment section 21 that allows temperature diffusion from the temperature adjustment section, an annular suppression structure 22 arranged adjacent to the temperature diffusion region that suppresses temperature diffusion from the temperature adjustment section, and a suppression region (region A) including the suppression structure 22 in which temperature diffusion from the temperature adjustment section is suppressed.

[0023] The substrate holding portion 2 is preferably disc-shaped, but may have other shapes. Furthermore, it is preferable that the temperature diffusion region (region B) is in contact with the outer periphery of the wafer substrate, and the suppression region (region A) is in contact with the inside of the outer periphery of the wafer substrate.

[0024] Furthermore, the heating section 21a, the cooling section 21b, and the suppression structure 22 may be arranged in a concentric ring shape centered on an arbitrary point on the substrate holding section 2, as shown in the figure. The arbitrary point may coincide with the ideal center position of the substrate 1 held by the substrate holding section 2. By arranging them in this way, the substrate holding section 2 can be deformed into a shape that is rotationally symmetrical with respect to an axis passing through the center of the concentric ring and perpendicular to the upper surface of the substrate holding section 2. For example, if it is desired to deform the substrate holding section 2 such that the height of the surface of the substrate 1 at an arbitrary point on the substrate 1 near the outer circumference of the substrate 1 decreases as the distance from the center of the concentric ring increases, the suppression structure 22, heating section 21a, and cooling section 21b may be arranged in order from the smallest radius, as shown in Figure 2.

[0025] Furthermore, because the suppression region 22 is located inside the annular temperature diffusion region (region B), the influence of temperature adjustment near the outer edge of the substrate on the central part of the substrate 1 is suppressed.

[0026] In this case, the radius of the heating section 21a must be smaller than the radius of the substrate 1, but the radius of the cooling section 21b may be larger than the radius of the substrate 1. In the region inside the radius of the suppression structure 22, the heat from the heating section 21a is suppressed, thus suppressing the temperature rise and preventing deformation of the substrate holding section 2. Also, as shown in Figure 2, the dissimilar material section 23 may be placed in the region inside the radius of the suppression structure 22. If a material with a small coefficient of linear expansion is used as the dissimilar material, deformation due to temperature changes can be further suppressed in this region.

[0027] Stage 3 is connected to the substrate holder 2 and can move horizontally on the stage platen 4. Stage 3 may move while in contact with the stage platen 4, or it may move while floating above the stage platen 4 using an air slider or magnetic force. Stage 3 may be moved in a position controllable manner using an encoder, laser displacement meter, interferometric displacement meter, etc.

[0028] The exposure means 5 irradiates the curing material supplied onto the substrate 1 with electromagnetic waves to form a pattern on the cured material onto which the pattern of the mold has been transferred. The exposure means 5 may use, for example, a reduction projection optical system or an imprint method.

[0029] The measurement unit 6 is configured to acquire shape information or distortion information of the substrate 1 or the shot area or the substrate holding unit 2. For example, it may be composed of a laser displacement meter or an interference displacement meter to measure the shape of the substrate 1 or the substrate holding unit 2, or it may be composed of a scope that detects marks to measure distortion information of the shot area. The results acquired by the measurement unit 6 are transmitted to the control unit 7, which will be described later, and may be used to control the temperature control unit 21. The exposure apparatus 100 does not necessarily have a measurement unit 6. In this case, the shape information or distortion information of the substrate 1 or the shot area or the substrate holding unit 2 used by the control unit 7 may be calculated from measurement results obtained by measuring the substrate 1, shot area or substrate holding unit 2 used in the processing with an external measuring instrument. Alternatively, it may be calculated from measurement results obtained by measuring the pattern formed on a previously processed substrate 1 that has been processed using the substrate holding unit 2 of the exposure apparatus with an external measuring instrument.

[0030] The control unit 7 is composed of a computer including a CPU and memory, and controls each part of the exposure apparatus 100 according to a program stored in memory. The control unit 7 controls the exposure process of forming a pattern on the substrate by controlling the operation and adjustment of each part of the exposure apparatus 100. The control unit 7 can give predetermined commands to the temperature adjustment unit 21 so that the temperature adjustment unit 21 provides a predetermined amount of heat to the substrate holding unit 2. Alternatively, it can receive information generated from the temperature measurement unit 24 or the measurement unit 6 or both, determine the control amount for the temperature adjustment unit 21, and give commands to the temperature adjustment unit 21.

[0031] <Embodiment for manufacturing an article> A method for manufacturing a device as an article (such as a semiconductor integrated circuit element or a liquid crystal display element) includes the step of forming a pattern on a substrate (wafer, glass plate, or film substrate) using the imprint apparatus described above.

[0032] Furthermore, the manufacturing method may include a step of etching the substrate on which the pattern has been formed.

[0033] Furthermore, when manufacturing other articles such as patterned media (recording media) or optical elements, the manufacturing method may include other processes for processing a substrate on which a pattern has been formed, instead of etching.

[0034] The method for manufacturing articles according to this embodiment is advantageous compared to conventional methods in at least one of the following aspects: performance, quality, productivity, and production cost.

[0035] (Examples of manufacturing methods for goods) The patterns of cured materials formed using an imprint apparatus are used permanently on at least a part of various articles, or temporarily during the manufacturing of various articles. Articles include electrical circuit elements, optical elements, MEMS, recording elements, sensors, or molds. Examples of electrical circuit elements include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, as well as semiconductor elements such as LSI, CCD, image sensors, and FPGAs. Examples of optical elements include microlenses, light guides, waveguides, anti-reflective coatings, diffraction gratings, polarizing elements, color filters, light-emitting elements, displays, and solar cells. Examples of MEMS include DMDs, microfluidics, and electromechanical conversion elements. Examples of recording elements include optical discs such as CDs and DVDs, magnetic discs, magneto-optical discs, and magnetic heads. Examples of sensors include magnetic sensors, optical sensors, and gyro sensors. Examples of molds include molds for imprinting.

[0036] The pattern of the cured material is either used as is as a component of at least a part of the above-mentioned article, or temporarily used as a resist mask. After etching or ion implantation is performed during the substrate processing process, the resist mask is removed.

[0037] Next, the method for manufacturing the article of the present invention will be described. As shown in Figure 3(a), a substrate 1z such as quartz glass is prepared, and then an imprint material 3z is applied to the surface of the substrate 1z having the workpiece 2z by an inkjet method or the like. If necessary, a layer of another material such as metal or a metal compound may be provided on the surface of the substrate 1z.

[0038] As shown in Figure 3(b), the mold 4z for imprinting is positioned so that the side with the raised and recessed pattern faces the imprint material 3z on the substrate 1z. As shown in Figure 3(c), the substrate 1z to which the imprint material 3z has been applied is brought into contact with the mold 4z, and pressure is applied. The imprint material 3z fills the gap between the mold 4z and the substrate 1z. When light is shone through the mold 4z in this state, the imprint material 3z hardens.

[0039] As shown in Figure 3(d), after the imprint material 3z has hardened, the mold 4z and the substrate 1z are separated from each other, forming a pattern of the hardened imprint material 3z on the substrate 1z. In this way, an article having the hardened material pattern as a component is obtained. Furthermore, if the substrate 1z is etched using the hardened material pattern as a mask in the state shown in Figure 3(d), as shown in Figures 3(e) and (f), an article with the recessed and convex parts reversed relative to the mold 4z, such as an imprint mold, can also be obtained.

[0040] Although preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of its essence. [Explanation of symbols]

[0041] 2 Board holding part 21 Temperature adjustment section 22 Suppression structure 7 Control Unit 100 Exposure equipment

Claims

1. A substrate holding device having a substrate holding portion for holding a substrate, The substrate holding portion is An annular temperature control section, The temperature control unit is included, and an annular temperature diffusion region is provided that allows temperature diffusion from the temperature control unit, An annular suppression structure, positioned adjacent to the temperature diffusion region, which suppresses temperature diffusion from the temperature control unit, The suppression structure includes the suppression region in which temperature diffusion from the temperature control section is suppressed, The suppression region is located inside the annular temperature diffusion region, The temperature diffusion region is in contact with the outer periphery of the substrate, and the suppression region is in contact with the inside of the outer periphery of the wafer substrate. A substrate holding device characterized by the following features.

2. The substrate holding device according to claim 1, wherein the temperature adjustment unit and the suppression structure are provided such that a temperature gradient is generated in the direction from the inside to the outside of the ring of the annular temperature diffusion region.

3. The substrate holding device according to claim 1, wherein the suppression structure has a hollow structure.

4. The substrate holding device according to claim 1, wherein the suppression structure is made of a porous material.

5. The substrate holding device according to claim 1, wherein the suppression structure is made of a material with a lower thermal conductivity than the adjacent material.

6. The substrate holding device according to claim 1, wherein at least a portion of the suppression region is made of a material with a low coefficient of linear expansion.

7. In an exposure apparatus having a substrate holding portion for holding a substrate, and for forming a pattern in at least one shot region on the substrate, The substrate holding portion comprises an annular temperature adjustment portion, an annular temperature diffusion region including the temperature adjustment portion and allowing temperature diffusion from the temperature adjustment portion, an annular suppression structure disposed adjacent to the temperature diffusion region and suppressing temperature diffusion from the temperature adjustment portion, and a suppression region including the suppression structure in which temperature diffusion from the temperature adjustment portion is suppressed. The suppression region is located inside the annular temperature diffusion region, The temperature diffusion region is arranged to be in contact with the outer peripheral portion of the substrate, and the suppression region is arranged to be in contact with the inside of the outer peripheral portion of the wafer substrate. The system further includes a control unit that controls the temperature adjustment unit, The control unit controls the temperature adjustment unit to form a temperature gradient in the substrate holding portion based on shape information or strain information of at least one of the substrate, the substrate holding portion, or the shot region. An exposure apparatus characterized by the following features.

8. The exposure apparatus according to claim 7, wherein the shape information or distortion information is shape or distortion information obtained in advance by measurement.

9. The exposure apparatus according to claim 7, wherein the shape information or the distortion information is information calculated from the measurement results of a pattern obtained in advance using the exposure apparatus.

10. The exposure apparatus according to claim 7, further comprising a measuring unit for measuring the shape information or the distortion information.

11. The substrate holding portion has a temperature measuring unit capable of measuring the temperature at one or more points. The exposure apparatus according to claim 7, characterized in that the control unit controls the temperature adjustment unit based on the measurement results of the temperature measurement unit.

12. A method for manufacturing an article, A step of forming a pattern on a substrate using an exposure apparatus according to any one of claims 7 to 11, A step of processing the substrate on which the pattern has been formed in the above step, A method for manufacturing an article having

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