Structure, method for manufacturing the structure, and composition

Abstract

A structure and a composition that exhibit excellent shielding performance with respect to electromagnetic waves of a tens of GHz frequency band are provided. Further, a structure manufacturing method with which it is possible to simply manufacture a structure having excellent shielding performance with respect to electromagnetic waves of a tens of GHz frequency band is provided. The structure comprises a substrate, a plurality of passive elements disposed on the substrate, and an electromagnetic wave-absorbing film which is disposed on the substrate and is at least positioned in a region between the plurality of passive elements. The passive elements are selected from the group consisting of an inductor and a balun. The electromagnetic wave-absorbing film includes magnetic particles. If the real part of the complex magnetic permeability μ of the electromagnetic wave-absorbing film is μ' and the complex part thereof is μ", the complex part μ" of the complex magnetic permeability μ of the electromagnetic wave-absorbing film satisfies one of requirements 1 to 3. Requirement 1: μ" at a frequency of 28 GHz is 0.1 to 10; requirement 2: μ" at a frequency of 47 GHz is 0.1 to 5; and requirement 3: μ" at a frequency of 60 GHz is 0.1 to 2.

Description

[Technical Field]

[0001] The present invention relates to a structure having an electromagnetic wave shielding function, a method for manufacturing the structure, and a composition used in the manufacture of the structure. [Background technology]

[0002] Currently, there are various communication systems that utilize wireless technologies, such as mobile communication terminals like mobile phones, smartphones, or tablets, internet communication, Wi-Fi (Wireless Fidelity), Bluetooth (registered trademark), and GPS (Global Positioning System). To support diverse communication systems, various components are required, including antennas capable of transmitting and receiving radio waves used in each system, passive elements that convert the radio waves received by the antenna into electric current or voltage, and semiconductor elements that generate the transmission signals sent from the antenna. Furthermore, the increasing functionality and miniaturization of mobile communication terminals in recent years, as well as the miniaturization of wireless communication modules deployed in communication access points, have led to a higher density of mounting components such as passive elements, semiconductor elements, and antennas. As a result, in mobile communication terminals and wireless communication modules, for example, electromagnetic waves generated by the operation of passive elements may affect other passive elements, hindering their normal operation. Therefore, shielding against electromagnetic waves has been a common practice.

[0003] For example, Patent Document 1 describes a system-on-a-chip configuration in which conductive gauges are provided to protect digital circuits and the like from electromagnetic radiation generated from high-frequency circuits arranged on a substrate. The conductive gauges are arranged around the high-frequency circuits. It is also described that the conductive gauges are made of metals or alloys such as copper, aluminum, gold, silver, platinum, or tungsten. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0017876 [Overview of the project] [Problems that the invention aims to solve]

[0005] In Patent Document 1, the conductive gauge used to protect digital circuits and the like from electromagnetic radiation is made of metal or an alloy. Therefore, sufficient shielding performance cannot be obtained against electromagnetic waves in the frequency band of several tens of GHz. The object of the present invention is to provide a structure and a composition that have excellent shielding performance against electromagnetic waves in the frequency band of several tens of GHz. Furthermore, the present invention provides a method for easily manufacturing a structure that has excellent shielding performance against electromagnetic waves in the frequency band of several tens of GHz. [Means for solving the problem]

[0006] The above objectives can be achieved with the following configuration. One aspect of the present invention provides a structure comprising a substrate, a plurality of passive elements disposed on the substrate, and an electromagnetic wave absorbing film located at least in the region between opposing passive elements on the substrate, wherein the passive elements are selected from the group consisting of inductors and baluns, the electromagnetic wave absorbing film contains magnetic particles, and when the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0007] One aspect of the present invention provides a structure comprising a substrate, a plurality of coil-shaped passive elements disposed on the substrate and having openings that open to the surface of the substrate, and an electromagnetic wave absorbing film located at at least one opening among the plurality of coil-shaped passive elements disposed on the substrate, wherein the coil-shaped passive elements are selected from the group consisting of inductors and baluns, and the electromagnetic wave absorbing film contains magnetic particles, and when the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0008] One aspect of the present invention provides a structure comprising a substrate, a plurality of passive elements arranged on the substrate, and an electromagnetic wave absorbing film provided on at least one of the spaces between the substrate and the passive elements, and on the side of the passive elements opposite the substrate, wherein the passive elements are selected from the group consisting of inductors and baluns, the electromagnetic wave absorbing film contains magnetic particles, and when the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0009] It is preferable that the electromagnetic wave absorbing film is provided in the region on the substrate between a plurality of coil-shaped passive elements arranged on the substrate. It is preferable that the electromagnetic wave absorbing film is provided between the substrate and the passive element, and on the side of the passive element opposite the substrate. The magnetic particles preferably contain at least one metallic element from among Ni, Co, and Fe, and have an average primary particle diameter of 20 to 1000 nm. The electromagnetic wave absorption film preferably has a thickness of 300 μm or less.

[0010] One aspect of the present invention includes a step of applying a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive elements are arranged to form a composition layer, and a step of performing an exposure process and a development process on the composition layer to form an electromagnetic wave absorption film that is at least located in a region between opposing passive elements among the plurality of passive elements arranged on the substrate. The passive element is selected from the group consisting of an inductor and a balun. When the real part of the complex relative permeability μ of the electromagnetic wave absorption film is μ' and the imaginary part is μ", the imaginary part μ" of the complex relative permeability μ of the electromagnetic wave absorption film satisfies any one of Requirements 1 to 3, and a method for manufacturing a structure is provided. Requirement 1: μ" at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ" at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ" at a frequency of 60 GHz is 0.1 to 2

[0011] One aspect of the present invention includes a step of applying a photosensitive composition containing magnetic particles to at least one opening among a plurality of coil-shaped passive elements provided with openings that open to the surface of the substrate and are arranged on the substrate to form a composition layer, and a step of performing an exposure process and a development process on the composition layer to form an electromagnetic wave absorption film that is located at least in one opening among the plurality of coil-shaped passive elements arranged on the substrate. The coil-shaped passive element is selected from the group consisting of an inductor and a balun. When the real part of the complex relative permeability μ of the electromagnetic wave absorption film is μ' and the imaginary part is μ", the imaginary part μ" of the complex relative permeability μ of the electromagnetic wave absorption film satisfies any one of Requirements 1 to 3, and a method for manufacturing a structure is provided. Requirement 1: μ" at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ" at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ" at a frequency of 60 GHz is 0.1 to 2

[0012] One aspect of the present invention provides a method for manufacturing a structure, which includes a step of applying a photosensitive composition containing magnetic particles onto a substrate to form a composition layer, a step of performing an exposure process and a development process on the composition layer to form an electromagnetic wave absorption film on the substrate, and a step of forming a plurality of passive elements on the electromagnetic wave absorption film. The passive element is selected from the group consisting of an inductor and a balun. When the real part of the complex relative permeability μ of the electromagnetic wave absorption film is μ' and the imaginary part is μ'', the imaginary part μ'' of the complex relative permeability μ of the electromagnetic wave absorption film satisfies any one of Requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0013] One aspect of the present invention provides a method for manufacturing a structure, which includes a step of applying a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive elements are arranged to form a composition layer, and a step of performing an exposure process and a development process on the composition layer to form an electromagnetic wave absorption film on the plurality of passive elements. The passive element is selected from the group consisting of an inductor and a balun. When the real part of the complex relative permeability μ of the electromagnetic wave absorption film is μ' and the imaginary part is μ'', the imaginary part μ'' of the complex relative permeability μ of the electromagnetic wave absorption film satisfies any one of Requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0014] The step of forming the composition layer preferably includes a step of applying the photosensitive composition onto the openings of the plurality of coil-shaped passive elements and onto the substrate on which the plurality of coil-shaped passive elements are arranged. The step of forming the electromagnetic wave absorption film is preferably a step of forming the electromagnetic wave absorption film in the openings of the plurality of coil-shaped passive elements arranged on the substrate and in the region between the coil-shaped passive elements on the substrate. Furthermore, it is preferable to have the steps of: applying a photosensitive composition onto an electromagnetic wave absorbing film on which a plurality of passive elements are formed to form a composition layer; and subjecting the composition layer to an exposure treatment and a development treatment to further form an electromagnetic wave absorbing film on the electromagnetic wave absorbing film on which a plurality of passive elements are formed.

[0015] One aspect of the present invention is a composition used for forming an electromagnetic wave absorbing film in a structure, comprising magnetic particles, a resin having an acid group, a curable compound, and a polymerization initiator. The present invention provides a composition in which, when the real part of the complex relative permeability μ of an electromagnetic wave absorbing film formed using the composition is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2 The magnetic particles preferably contain at least one metallic element from among Ni, Co, and Fe, and have an average primary particle diameter of 20 to 1000 nm. [Effects of the Invention]

[0016] According to the present invention, it is possible to provide a structure and a composition that have excellent shielding performance against electromagnetic waves in the frequency band of several tens of GHz. Furthermore, this invention provides a method for easily manufacturing structures that have excellent shielding performance against electromagnetic waves in the frequency band of several tens of GHz. [Brief explanation of the drawing]

[0017] [Figure 1] This is a schematic plan view showing a first example of a structure according to an embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view showing a first example of a structure according to an embodiment of the present invention. [Figure 3] This is a schematic perspective view showing an example of an inductor, a first example of a structure according to an embodiment of the present invention. [Figure 4]This is a schematic perspective view showing an example of an inductor, a first example of a structure according to an embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing an example of a manufacturing method for a first example of a structure according to an embodiment of the present invention. [Figure 6] This is a schematic cross-sectional view showing an example of a manufacturing method for a first example of a structure according to an embodiment of the present invention. [Figure 7] This is a schematic cross-sectional view showing an example of a manufacturing method for a first example of a structure according to an embodiment of the present invention. [Figure 8] This is a schematic perspective view showing a second example of a structure according to an embodiment of the present invention. [Figure 9] This is a schematic cross-sectional view showing an example of a manufacturing method for a second example of a structure according to an embodiment of the present invention. [Figure 10] This is a schematic perspective view showing a third example of a structure according to an embodiment of the present invention. [Figure 11] This is a schematic cross-sectional view showing an example of a manufacturing method for a third example of a structure according to an embodiment of the present invention. [Figure 12] This is a schematic perspective view showing a fourth example of a structure according to an embodiment of the present invention. [Figure 13] This is a schematic cross-sectional view showing an example of a manufacturing method for a fourth example of a structure according to an embodiment of the present invention. [Figure 14] This is a schematic cross-sectional view showing an example of a manufacturing method for a fourth example of a structure according to an embodiment of the present invention. [Figure 15] This is a schematic perspective view showing a fifth example of a structure according to an embodiment of the present invention. [Figure 16] This is a schematic cross-sectional view showing an example of a manufacturing method for a fifth example of a structure according to an embodiment of the present invention. [Figure 17] This is a schematic cross-sectional view showing an example of a manufacturing method for a fifth example of a structure according to an embodiment of the present invention. [Figure 18] This is a schematic perspective view showing a sixth example of a structure according to an embodiment of the present invention. [Figure 19] This is a schematic cross-sectional view showing an example of a manufacturing method for a sixth example of a structure according to an embodiment of the present invention. [Figure 20]This graph shows an example of the magnetic field of an inductor. [Figure 21] This is a schematic perspective view showing an example of an antenna-in-package. [Figure 22] This is a schematic perspective view showing the structure of Comparative Example 2. [Modes for carrying out the invention]

[0018] The structure, method for manufacturing the structure, and composition of the present invention will be described in detail below based on preferred embodiments shown in the attached drawings. The figures described below are illustrative examples for illustrating the present invention, and the present invention is not limited to the figures shown below. Furthermore, the diagrams described below highlight the inductor and magnetic material portions of the actual device, while the surrounding electrical circuits, copper wires, and waveguides are omitted from the illustrations. In the following, the "~" indicating a numerical range includes the numbers written on both sides. For example, ε is the numerical value ε α ~Value ε β Therefore, the range of ε is the numerical value ε α and the numerical value ε β This range includes ε α ≦ε≦ε β That is the case. Unless otherwise specified, angles include the generally acceptable margin of error in the relevant technical field.

[0019] [Example 1 of a structure history] Figure 1 is a schematic plan view showing a first example of a structure according to an embodiment of the present invention, and Figure 2 is a schematic cross-sectional view showing a first example of a structure according to an embodiment of the present invention. The structure 10 includes a substrate 20, a plurality of passive elements 11 arranged on the substrate 20, and an electromagnetic wave absorbing film 24 located at least in the region 21 between opposing passive elements 11 on the substrate 20. In Figure 1, the electromagnetic wave absorbing film 24 is arranged on the surface 20a of the substrate 20, surrounding the passive elements 11. Multiple passive elements 11 are electrically connected to one another. As shown in Figure 2, the structure 10 consists of, for example, two interlayer insulating films 22 spaced apart on a substrate 20, with one passive element 11 provided on each interlayer insulating film 22. The electromagnetic wave absorbing film 24 is provided on the surface 20a of the substrate 20, surrounding the passive elements 11.

[0020] The passive element 11 is selected from the group consisting of inductors and baluns. The balun of the present invention is the balun transformer described later. The passive element 11 shown in Figure 1 is, for example, an inductor 12 and an inductor 14. When the passive elements 11 are described as being spaced apart on the substrate 20, it means that multiple passive elements 11, such as inductors 12 and 14, are provided on the same surface of the substrate 20, and not that inductor 12 is provided on the front surface 20a of the substrate 20 and inductor 14 is provided on the back surface 20b of the substrate 20. The substrate 20 is considered to be on the same surface even if there are steps on the substrate 20, if the substrate 20 is curved, or if there is another layer such as an insulating film between the substrate 20 and the passive elements 11. Furthermore, the electromagnetic wave absorbing film 24 only needs to be located in the region 21 between the passive elements 11 on the substrate 20. The region 21 between the passive elements 11 on the substrate 20 is, for example, the space on the side where inductors 12 and 14 face each other when inductors 12 and 14 are arranged facing each other and spaced apart.

[0021] The inductor 12 is a coil, as shown in Figure 3, for example, and is composed of a single strip-shaped member 12a. The inductor 12 has an outer shape that is circular or a polygon such as an octagon. The inductor 12 has an opening 13 that opens to the surface 20a of the substrate 20. The opening 13 of the inductor 12 is the region surrounded by the strip-shaped member 12a. Inductor 12 is a passive element that operates near its self-resonant frequency, and a large current flows at that frequency to extract a signal with a specific frequency. The self-resonant frequency is, for example, 60 GHz. Inductors, for example, use electromagnetic waves that are used in 5G (Generation) communication standards, which utilize a frequency band of 28 GHz to 80 GHz. An inductor is made of, for example, copper. The thickness of the inductor is, for example, 0.1 to 500 μm.

[0022] The inductor 14 is a coil, as shown in Figure 4, for example, and is composed of a strip-shaped member 14a with a predetermined number of turns. Like the inductor 12, the inductor 14 has an outer shape that is circular or polygonal, such as an octagon. The inductor 14 has an opening 15 that opens to the surface 20a of the substrate 20. The opening 15 of the inductor 14 is the region enclosed by the strip-shaped member 14a. The size and number of turns of the inductor 14 are determined by the resonant frequency. For example, if the resonant frequency is 60 GHz, the outer diameter is 100 μm, the width of the strip member 14a is 15 μm, the thickness of the strip member is 2 μm, and the number of turns is 1.75. The coils indicated by inductor 12 and inductor 14 can be used individually as inductors, or stacked together to form a balun transformer. The thicknesses of the coils indicated by inductor 12 and inductor 14 may be different.

[0023] A balun transformer (not shown) is constructed by stacking coils, for example, in the shape of an inductor 12 or an inductor 14, vertically on top of each other, with a certain distance, for example, 10 μm to 300 μm, between them in the vertical direction perpendicular to the surface 20a of a substrate 20, so that the centers of the two coils coincide. The balun transformer is an element that converts or modulates a high-frequency signal of several tens of GHz input to one coil to the other coil. A balun transformer aligns or inverts the waveform of an input high-frequency signal in the range of tens of GHz. It is also a component used to convert electrical signals between balanced and unbalanced states. For example, a balun transformer is made of copper. The thickness of the coil in the balun transformer may vary, for example, from 0.1 to 500 μm. Furthermore, when a high-frequency signal in the frequency band of several tens of GHz is input to the coils of inductor 12 and inductor 14, high-frequency waves in the frequency band of several tens of GHz are generated, creating an electromagnetic field. For example, if an electromagnetic field is generated due to the high-frequency waves generated in inductor 14, it may affect inductor 12 unless the electromagnetic wave absorbing film 24 is used to shield the electromagnetic field. Inductors 12 and 14, as well as the balun transformer, are also referred to as coil-type passive elements.

[0024] The substrate 20 is composed of, for example, Si, polyimide, or SiO2. The interlayer insulating film 22 is composed of, for example, SiO2. The substrate 20 and the interlayer insulating film 22 can also be composed of glass epoxy resin such as FR (Flame Retardant)-4 or PTFE (polytetrafluoroethylene). Inductors 12 and 14, as well as the balun transformer, are made of copper (Cu). Note that the interlayer insulating film 22 is different from the electromagnetic wave absorbing film 24. When the real part of the complex relative permeability μ of the interlayer insulating film 22 is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the interlayer insulating film 22 does not satisfy the following requirements 1 to 3. For example, the real part μ' of the interlayer insulating film 22 is 1 and the complex part μ'' is zero. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0025] Structure 10 is used, for example, in an antenna-in-package, and in addition to the inductors 12 and 14 mentioned above, and the passive element 11 of the balun transformer (not shown), it also includes, although not shown, an array antenna, an A / D (Analog / Digital) circuit, memory, and an ASIC (Application Specific Integrated Circuit). The A / D circuit, memory, and ASIC are composed of various semiconductor elements, for example. Furthermore, in addition to the above-described configuration, structure 10 includes various circuits and elements found in mobile communication terminals such as smartphones or wireless communication modules, such as RF (Radio Frequency) circuits, transmitting power amplifiers, receiving low-noise amplifiers, integrated passive elements, switches, or phase shifters.

[0026] The substrate 20 functions as a support for the structure 10, and the passive elements 11 described above are arranged on it. An electromagnetic wave absorbing film 24 is also arranged on the substrate 20. In addition, the A / D circuit, memory, and ASIC that constitute the antenna-in-package described above may be arranged on the substrate 20. The interlayer insulating film 22 forms the inductors 12 and 14, as well as the balun transformer, and electrically isolates the inductors 12 and 14, as well as the balun transformer. The interlayer insulating film 22 is not particularly limited as long as it can electrically insulate the inductors 12 and 14, and the balun transformer; various types used in the formation of semiconductor devices can be used.

[0027] The electromagnetic wave absorbing film 24 absorbs electromagnetic waves radiated from the inductor 12 or inductor 14, and the balun transformer. The electromagnetic wave absorbing film 24 shields the electromagnetic waves radiated from one of the inductors 12 and 14, and the balun transformer, thereby suppressing the electromagnetic wave influence on the other of the inductors 12 and 14, and the balun transformer. This prevents interference with the normal operation of the passive elements. The electromagnetic wave absorbing film 24 contains magnetic particles. When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of the following requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2 The magnetic particles enable the electromagnetic wave absorbing film 24 to exhibit sufficient shielding performance against electromagnetic waves in the frequency band of several tens of GHz. The magnetic particles will be explained later. The preferred ranges for requirements 1 to 3 are as follows: Requirement 1: μ'' at a frequency of 28 GHz is 0.7 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.5 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.2~2

[0028] The real part μ' and the complex part μ'' of the complex relative permeability μ of an electromagnetic wave absorbing film can be measured as follows. As measurement equipment, a vector network analyzer from Keysight (product name: N5225B) and horn antennas from Keycom Co., Ltd. (product names: RH12S23, RH06S10) are used. Next, using the free-space method, with the incident angle set to 0° and the sweep frequency band set to 55.0 GHz to 95.0 GHz, one plane of each electromagnetic wave absorbing film is pointed towards the incident side, and S-parameters are measured every 0.1 GHz to determine the permeability (μ' and μ") at 60 GHz. By changing the sweep frequency band, the permeability (μ' and μ") at 28 GHz and 47 GHz is determined. The complex part μ'' of the complex relative permeability μ of the interlayer insulating film 22 can also be measured in the same manner as the real part μ' and complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film.

[0029] Permeability is the rate of change in magnetic flux density (B) that occurs when a magnetic field (H) is applied to a material, and is expressed by the following formula. μ = B / H In the case of magnetic materials, more magnetic flux passes through the interior of the magnetic material, but in non-magnetic materials, the value remains unchanged, so the value is 1. The permeability is expressed by the following formula. Here, j in the following formula represents an imaginary number. μ = μ' (real part) - j × μ'' (imaginary part) When the direction of the current reverses at high frequencies, such as with electromagnetic waves, the real part represents the magnetic material's ability to produce a higher magnetic flux density, while the imaginary part μ'' indicates energy loss. Specifically, the magnetic moment of the crystal within the magnetic material tends to align with the direction of the magnetic field generated by the high frequency, but when the magnetic moment is reversed in the opposite direction, a delay in the reversal time or energy loss (converted to heat) occurs. At high frequencies, changes in the magnetic moment within a magnetic material cannot keep up with changes in the magnetic field of an externally supplied electromagnetic field, resulting in significant energy loss. This effect is utilized for absorbing electromagnetic waves.

[0030] Furthermore, the thickness of the electromagnetic wave absorbing film 24 is preferably 300 μm or less. If the thickness of the electromagnetic wave absorbing film 24 is 300 μm or less, the electromagnetic wave shielding performance can be maintained while the height of the structure can be reduced. The thickness of the electromagnetic wave absorbing film 24 is more preferably 10 to 200 μm, with a lower limit of 5 μm.

[0031] An array antenna constituting an antenna-in-package may have, for example, four antennas. For example, all four antennas may be identical. The array antenna and its configuration are not particularly limited and are appropriately determined according to the frequency band to be transmitted or received, the polarization direction to be received, etc. Also, while an array antenna may have four antennas, it is not limited to this. A single antenna may be used instead of an array antenna.

[0032] An A / D circuit converts an analog signal into a digital signal, and a well-known AD converter is used. The A / D circuit converts the received signal, which is received by an array antenna via radio waves, into a digital signal. An ASIC obtains the original data or signal transmitted to an array antenna from a digitized received signal. It also generates the transmitted data or signal in digital form. The functions of an ASIC are not particularly limited and are determined appropriately depending on the application. Furthermore, the A / D circuit converts the transmission data or transmission signal generated by the ASIC into an analog signal that can be transmitted by the array antenna.

[0033] The memory stores the transmission data or transmission signals generated in the ASIC described above, the digitized received signals received by the array antenna, and so on. For example, volatile memory such as DRAM (Dynamic Random Access Memory) can be used, but HBM (High Bandwidth Memory) is preferred. Furthermore, the electromagnetic wave absorbing film 24 suppresses electromagnetic interference caused by electromagnetic waves emitted by the array antenna to the A / D circuit, memory, and ASIC. As a result, the A / D circuit, memory, and ASIC are not hindered from operating normally, and malfunctions are suppressed. By controlling the absorption of electromagnetic waves using the electromagnetic wave absorbing film 24, the directivity of the antenna output can be enhanced. Furthermore, by incorporating magnetic material as a structural element inside the wafer-level package structure, it is possible to achieve higher integration and performance of the structure.

[0034] [Manufacturing method for the first example of a structure] The method comprises the steps of: applying a photosensitive composition containing magnetic particles onto a substrate on which a plurality of passive elements are arranged to form a composition layer; and subjecting the composition layer to an exposure treatment and a development treatment to form an electromagnetic wave absorbing film located at least in the region between the plurality of passive elements arranged on the substrate. As described above, the passive element is selected from the group consisting of inductors and baluns. When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of the following requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

[0035] Here, Figures 5 to 7 are schematic cross-sectional views showing an example of a manufacturing method for the first example of the structure of the embodiment of the present invention in order of steps. In Figures 5 to 7, the same reference numerals are used for components identical to those in the structure 10 shown in Figures 1 and 2, and their detailed descriptions are omitted. For example, as shown in Figure 5, an inductor 12 and an inductor 14 are provided spaced apart on the surface 20a of a substrate 20. The inductors 12 and 14 are provided within an interlayer insulating film 22. The inductors 12 and 14 are formed by device microfabrication techniques that combine multiple processes such as multilayer sputtering, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), photolithography, dry etching, wet etching, plasma ashing, copper electroplating, CMP (Chemical Mechanical Polishing) slurry polishing, and wet etching. A balun transformer can also be formed in the same manner as the inductors 12 and 14. Next, as shown in Figure 6, the photosensitive composition containing the magnetic particles described above is applied to the entire surface 20a of the substrate 20 to form a composition layer 23. For example, the composition layer 23 is negative, and the unexposed areas are removed by a developing process. The thickness of the composition layer 23 is not particularly limited, and any thickness that results in a thickness of 300 μm or less when it becomes an electromagnetic wave absorbing film 24, as described later, is acceptable.

[0036] Next, as shown in Figure 7, a photomask 30 is placed on the composition layer 23. The photomask 30 has a mask portion 31a in an area other than the area where the electromagnetic wave absorbing film 24 is formed. The area 31b other than the mask portion 31a is transmitted to the exposure light Lv that exposes the composition layer 23. The mask portion 31a blocks the exposure light Lv. As described above, the composition layer 23 exposed using the photomask 30 is negative type, and the unexposed areas are removed by the development process. That is, the exposed areas of the composition layer 23 become the electromagnetic wave absorbing film 24. The composition layer 23 formed in the opening 13 of the inductor 12 and the opening 15 of the inductor 14 are unexposed areas and are therefore removed, so the electromagnetic wave absorbing film 24 is not formed in the opening 13 of the inductor 12 and the opening 15 of the inductor 14. Furthermore, if the composition layer 23 is positive type, the exposed area is removed by the development process, so the light-shielding area of ​​the photomask 30 is reversed compared to the photomask 30 shown in Figure 7. The developing process is not particularly limited, and any known developing process can be applied. Examples of developing solutions used in the developing process include alkaline developers and developers containing organic solvents.

[0037] The photomask 30 is placed on the composition layer 23 and exposed, and then developed to form an electromagnetic wave absorbing film 24 (see Figure 1). This yields the structure 10 shown in Figure 1. As described above, an electromagnetic wave absorbing film 24 (see Figure 1) can be formed by exposure and development processes, enabling the easy manufacture of highly integrated and high-performance structures.

[0038] [Second example of a structure] Figure 8 is a schematic perspective view showing a second example of a structure according to an embodiment of the present invention. In Figure 8, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10a shown in Figure 8 differs from the structure 10 shown in Figures 1 and 2 in that the position of the electromagnetic wave absorbing film 24 is different.

[0039] Structure 10a has the same configuration as structure 10 shown in Figures 1 and 2, except that electromagnetic wave absorbing films 24 are placed in the openings 13 of inductor 12 and 15 of inductor 14, and an interlayer insulating film 22 is provided around inductors 12 and 14 on the surface 20a of the substrate 20. By providing electromagnetic wave absorbing films 24 in the openings 13 of inductor 12 and 15 of inductor 14, the same effects as those of the structure 10 shown in Figures 1 and 2 can be obtained. Furthermore, structure 10a allows for a smaller electromagnetic wave absorbing film 24 compared to structure 10 shown in Figures 1 and 2. Therefore, the amount of the above-mentioned photosensitive composition required to form the electromagnetic wave absorbing film 24 can be reduced. In the structure 10a shown in Figure 8, electromagnetic wave absorbing films 24 are provided at the opening 13 of inductor 12 and the opening 15 of inductor 14. However, it is sufficient to provide the electromagnetic wave absorbing film 24 at least at one of the openings 13 of inductor 12 and 15 of inductor 14. In this case, it is preferable to provide the electromagnetic wave absorbing film 24 at the inductor 14 that generates high-frequency waves. In contrast to the above configuration, if three or more coil-shaped passive elements are arranged, such as inductors 12, inductors 14, or balun transformers (not shown), then the electromagnetic wave absorbing film 24 should be formed at at least one opening of these coil-shaped passive elements.

[0040] [Manufacturing method for the second example of the structure] Figure 9 is a schematic cross-sectional view showing an example of a manufacturing method for a second example of the structure of the embodiment of the present invention. In Figure 9, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. First, as shown in Figure 9, a substrate 20 is prepared on which, for example, inductors 12 and 14 are provided spaced apart. The interlayer insulating film 22 is provided over the entire surface 20a of the substrate 20. Inductors 12 and 14 are provided within the interlayer insulating film 22. The interlayer insulating film 22 is not formed in the opening 13 of inductor 12 and the opening 15 of inductor 14. Next, the above-mentioned photosensitive composition is applied to the interlayer insulating film 22 to form a composition layer 23 on the interlayer insulating film 22. The composition layer 23 is also formed at the opening 13 of the inductor 12 and the opening 15 of the inductor 14. For example, the composition layer 23 is negative type, and the unexposed areas are removed by a developing process. Next, a photomask (not shown) is placed on the composition layer 23. The photomask is configured similarly to the photomask 30 shown in Figure 7, with a mask portion 31a that blocks the exposure light Lv. The photomask exposes the composition layer 23 between the opening 13 of the inductor 12 and the opening 15 of the inductor 14. After exposure, a development process is performed to form an electromagnetic wave absorbing film 24 located at the opening 13 of the inductor 12 and the opening 15 of the inductor 14, as shown in Figure 8. This yields the structure 10a shown in Figure 8.

[0041] [Third example of a structure] Figure 10 is a schematic perspective view showing a third example of a structure according to an embodiment of the present invention. In Figure 10, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10b in Figure 10 has the same configuration as the structure 10 shown in Figures 1 and 2, except that electromagnetic wave absorbing films 24 are placed in the openings 13 of the inductor 12 and 15 of the inductor 14. In addition to providing an electromagnetic wave absorbing film 24 in the region 21 between inductors 12 and 14 on the substrate 20, providing the electromagnetic wave absorbing film 24 at the openings 13 of inductor 12 and 15 of inductor 14 allows inductors 12 and 14 to be formed within the electromagnetic wave absorbing film 24, thereby further absorbing electromagnetic waves. This further suppresses the effects of electromagnetic waves on inductors 12 and 14. Although the configuration described provides the electromagnetic wave absorbing film 24 at both the openings 13 of inductor 12 and 15 of inductor 14, it is also acceptable to provide the electromagnetic wave absorbing film 24 at only one of the openings 13 of inductor 12 or 15 of inductor 14. In this case, it is preferable to provide the electromagnetic wave absorbing film 24 at the opening that generates the high frequency, as described above. This allows for efficient shielding of electromagnetic waves. In contrast to the above configuration, if three or more coil-shaped passive elements are arranged, such as inductors 12, inductors 14, or balun transformers (not shown), then the electromagnetic wave absorbing film 24 should be formed at at least one opening of these coil-shaped passive elements.

[0042] [Manufacturing method for the third example of the structure] Figure 11 is a schematic cross-sectional view showing an example of a manufacturing method for a second example of the structure of an embodiment of the present invention. In Figure 11, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. First, as shown in Figure 11, a substrate 20 is prepared in which, for example, two interlayer insulating films 22 are provided spaced apart on the surface 20a of the substrate 20. An inductor 12 and an inductor 14 are provided within each interlayer insulating film 22. The interlayer insulating film 22 is not formed in the opening 13 of the inductor 12 and the opening 15 of the inductor 14.

[0043] Next, the above-mentioned photosensitive composition is applied to the surface 20a of the substrate 20 to form a composition layer 23 (see Figure 11) that covers the inductor 12 and the inductor 14. The composition layer 23 is formed not only in the region 21 between the inductor 12 and the inductor 14 on the substrate 20, but also in the opening 13 of the inductor 12 and the opening 15 of the inductor 14. For example, the composition layer 23 is negative type, and the unexposed areas are removed by a developing process. Next, a photomask (not shown) is placed on the composition layer 23. The photomask is configured such that the mask portion 31a blocks the exposure light Lv, similar to the photomask 30 shown in Figure 7. The photomask exposes the area around the inductor 12 and the opening 13 of the inductor 12, and the area around the inductor 14 and the opening 15 of the inductor 14 in the composition layer 23. After exposure, a development process is performed to form an electromagnetic wave absorbing film 24 in the region 21 between the inductor 12 and the inductor 14 on the substrate 20, as shown in Figure 10, as well as electromagnetic wave absorbing films 24 located at the opening 13 of the inductor 12 and the opening 15 of the inductor 14. This results in the structure 10b shown in Figure 10.

[0044] [Fourth example of a structure] Figure 12 is a schematic perspective view showing a fourth example of a structure according to an embodiment of the present invention. In Figure 12, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10c in Figure 12 has the same configuration as the structure 10 shown in Figures 1 and 2, except that an interlayer insulating film 22 is provided around the inductors 12 and 14 on the surface 20a of the substrate 20, and an electromagnetic wave absorbing film 24 is arranged on the opposite side of the substrate 20 from the inductors 12 and 14. The electromagnetic wave absorbing film 24 is provided on the opposite side of the substrate 20, for example, on the entire surface 22a of the interlayer insulating film 22, and the inductors 12 and 14 are covered with the electromagnetic wave absorbing film 24. By providing an electromagnetic wave absorbing film 24 that covers inductors 12 and 14, electromagnetic waves radiated from inductor 12 or inductor 14 are absorbed. This makes it possible to obtain the same effect as the structure 10 shown in Figures 1 and 2.

[0045] [Manufacturing method for the fourth example of the structure] Figures 13 and 14 are schematic cross-sectional views showing an example of a manufacturing method for a fourth example of the structure of the embodiment of the present invention, in order of steps. In Figures 13 and 14, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. First, as shown in Figure 13, a substrate 20 is prepared in which, for example, an inductor 12 and an inductor 14 are provided spaced apart. Inductors 12 and 14 are provided within an interlayer insulating film 22.

[0046] Next, the above-mentioned photosensitive composition is applied to the entire surface 22a of the interlayer insulating film 22 to form a composition layer 23 that covers the inductors 12 and 14, as shown in Figure 14. For example, the composition layer 23 is negative type, and the unexposed areas are removed by a developing process. Next, the composition layer 23 is exposed to light. After exposure, a developing process is performed to form an electromagnetic wave absorbing film 24 over the entire surface 22a of the interlayer insulating film 22, as shown in Figure 12, and the inductors 12 and 14 are covered by the electromagnetic wave absorbing film 24. This results in the structure 10c shown in Figure 12. Furthermore, the electromagnetic wave absorbing film 24 is not particularly limited to being provided on the entire surface 22a of the interlayer insulating film 22, as long as it is provided on the opposite side of the substrate 20 of the passive element 11. For example, the electromagnetic wave absorbing film 24 may be provided on the opposite side of the substrate 20 of at least one of the inductors 12 and 14. In this case, the electromagnetic wave absorbing film 24 may be provided on the entire surface of both the inductors 12 and 14, but it is sufficient if it is provided on at least one of the openings 13 of the inductor 12 and 15 of the inductor 14.

[0047] [Fifth example of a structure] Figure 15 is a schematic perspective view showing a fifth example of a structure according to an embodiment of the present invention. In Figure 15, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10d in Figure 15 has the same configuration as the structure 10 shown in Figures 1 and 2, except that an electromagnetic wave absorbing film 24 is placed between the substrate 20 and the passive element 11, and the inductors 12 and 14 are provided in the interlayer insulating film 22. The electromagnetic wave absorbing film 24 is placed over the entire surface 20a of the substrate 20. The inductors 12 and 14 are provided on the electromagnetic wave absorbing film 24. By providing an electromagnetic wave absorbing film 24 between the substrate 20 and the passive element 11, electromagnetic waves can be absorbed, and the same effect as the structure 10 shown in Figures 1 and 2 can be obtained.

[0048] Furthermore, inductors 12 and 14 are not limited to being provided on the interlayer insulating film 22, as long as they are provided on the electromagnetic wave absorbing film 24. Inductors 12 and 14 may also be provided on the electromagnetic wave absorbing film 24 in the absence of the interlayer insulating film 22. Furthermore, the electromagnetic wave absorbing film 24 is not particularly limited to being provided on the entire surface 20a of the substrate 20, as long as it is provided between the substrate 20 and the passive element 11. For example, it is sufficient to provide the electromagnetic wave absorbing film 24 between at least one of the inductors 12 and 14 and the substrate 20. In this case, the electromagnetic wave absorbing film 24 may be provided on the entire surfaces of both the inductors 12 and 14, but it is sufficient to provide it on at least one of the openings 13 of the inductor 12 and 15 of the inductor 14. This allows for efficient shielding of electromagnetic waves as described above.

[0049] [Manufacturing method for the fifth example of the structure] Figures 16 and 17 are schematic cross-sectional views showing an example of a manufacturing method for a fifth example of the structure of the embodiment of the present invention, in order of steps. In Figures 16 and 17, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. First, as shown in Figure 16, the above-mentioned photosensitive composition is applied to the entire surface 20a of the substrate 20 to form a composition layer 23 over the entire surface 20a of the substrate 20. For example, the composition layer 23 is negative type, and the unexposed areas are removed by the development process. Next, the entire composition layer 23 is exposed. After exposure, a developing process is performed to form an electromagnetic wave absorbing film 24 over the entire surface 20a of the substrate 20, as shown in Figure 17. Next, inductors 12 and 14 are formed on the electromagnetic wave absorbing film 24. In this case, inductors 12 and 14 are formed within the interlayer insulating film 22. This yields the structure 10d shown in Figure 15. Inductors 12 and 14 are formed by device microfabrication technology that combines multiple processes such as multilayer sputtering, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), photolithography, dry etching, wet etching, plasma ashing, copper electroplating, CMP (Chemical Mechanical Polishing) slurry polishing, and wet etching. In addition, the inductors 12 and 14 may be formed directly on the electromagnetic wave absorbing film 24 instead of being formed within the interlayer insulating film 22.

[0050] [Example 6 of the structure] Figure 18 is a schematic perspective view showing a sixth example of a structure according to an embodiment of the present invention. In Figure 18, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10e in Figure 18 has the same configuration as the structure 10 shown in Figures 1 and 2, except that an electromagnetic wave absorbing film 24 is placed between the substrate 20 and the passive element 11, the electromagnetic wave absorbing film 24 is placed on the opposite side of the substrate 20 from the inductors 12 and 14, and the inductors 12 and 14 are provided in the interlayer insulating film 22.

[0051] The electromagnetic wave absorbing film 24 is placed over the entire surface 20a of the substrate 20. An interlayer insulating film 22 is placed over the entire surface 24a of the electromagnetic wave absorbing film 24, and inductors 12 and 14 are provided within the interlayer insulating film 22. Inductors 12 and 14 are provided on the electromagnetic wave absorbing film 24. Furthermore, another electromagnetic wave absorbing film 24 is provided over the entire surface 22a of the interlayer insulating film 22. Inductors 12 and 14 are covered by the electromagnetic wave absorbing film 24. By providing an electromagnetic wave absorbing film 24 between the substrate 20 and the passive element 11, and by providing an electromagnetic wave absorbing film 24 that covers the inductors 12 and 14, it is possible to absorb electromagnetic waves radiated to the surface 20a side of the substrate 20 and electromagnetic waves radiated to the opposite side of the surface 20a of the substrate 20, thereby absorbing electromagnetic waves over a wider area than the structure 10 shown in Figures 1 and 2. Structure 10e can achieve the same effect as structure 10. Also, structure 10e has more layers than structure 10.

[0052] Even in structure 10e, as described above, the electromagnetic wave absorbing film 24 is not particularly limited to a configuration in which the electromagnetic wave absorbing film 24 is provided on the opposite side of the substrate 20 of the passive element 11. For example, the electromagnetic wave absorbing film 24 may be provided on the opposite side of the substrate 20 of at least one of the inductors 12 and 14. In this case, the upper electromagnetic wave absorbing film 24 may be provided on the entire surface of the inductors 12 and 14, but it is sufficient if it is provided on at least one of the openings 13 of the inductor 12 and 15 of the inductor 14. Structure 10e in Figure 18 is a combination of structure 10c in Figure 12 and structure 10d in Figure 15. The arrangement of the electromagnetic wave absorbing film 24 can be either structure 10c in Figure 12 or structure 10d in Figure 15, as described above.

[0053] [Manufacturing method for the sixth example of the structure] Figure 19 is a schematic cross-sectional view showing an example of a manufacturing method for a sixth example of the structure of the embodiment of the present invention, in order of steps. In Figure 19, the same components as the structure 10 shown in Figures 1 and 2, the inductor 12 shown in Figure 3, and the inductor 14 shown in Figure 4 are denoted by the same reference numerals, and their detailed descriptions are omitted. The structure 10e in Figure 18 is a configuration in which an electromagnetic wave absorbing film 24 is placed on the opposite side of the substrate 20 of the inductors 12 and 14 from the structure 10d shown in Figure 15. In the configuration shown in Figure 17, the above-mentioned photosensitive composition is applied to the entire surface 22a of the interlayer insulating film 22, which contains inductors 12 and 14, to form a composition layer 23 on the interlayer insulating film 22 as shown in Figure 19. For example, the composition layer 23 is negative type, and the unexposed areas are removed by a developing process. Next, the composition layer 23 is exposed to light. After exposure, a developing process is performed to form an upper electromagnetic wave absorbing film 24 on the interlayer insulating film 22 on which the inductors 12 and 14 are provided, as shown in Figure 18. This yields the structure 10e shown in Figure 18. Furthermore, if the inductors 12 and 14 are formed on the electromagnetic wave absorbing film 24 formed on the substrate 20 without providing an interlayer insulating film 22, then an upper layer of electromagnetic wave absorbing film 24 will be formed on top of the electromagnetic wave absorbing film 24 on which the multiple passive elements 11, such as the inductors 12 and 14, are formed.

[0054] In the first to sixth examples of the above-described structure, when a 60 GHz high-frequency signal is input to the inductor 14, the magnetic field above the inductor 12 will be as shown in Figure 20, for example. Figure 20 also shows a configuration without the electromagnetic wave absorbing film (see curve 56) for reference. From Figure 20, the magnetic field above the inductor 12 differs depending on the position on the inductor 12. By providing the electromagnetic wave absorbing film 24, the magnetic field above the inductor 12 can be reduced compared to the case without the electromagnetic wave absorbing film 24. That is, by providing the electromagnetic wave absorbing film 24, electromagnetic waves reaching the inductor 12 are absorbed, the magnetic field of the inductor 12 is reduced, and the effects of high frequencies can be reduced.

[0055] In Figure 20, curve 50 shows a configuration in which an electromagnetic wave absorbing film 24 is provided in the region 21 between inductors 12 and 14 on the substrate 20 (see Figure 1). Curve 51 shows a configuration in which an electromagnetic wave absorbing film 24 is provided at the opening 13 of inductor 12 and the opening 15 of inductor 14 (see Figure 8). Curve 52 shows a configuration in which an electromagnetic wave absorbing film 24 is provided in the region 21 between inductors 12 and 14 on the substrate 20 and at the opening 13 of inductor 12 and the opening 15 of inductor 14 (see Figure 10). Curve 53 shows a configuration in which an electromagnetic wave absorbing film 24 is provided above inductors 12 and 14 (see Figure 12). Curve 54 shows a configuration in which an electromagnetic wave absorbing film 24 is provided between the substrate 20 and inductors 12 and 14 (see Figure 15). Curve 55 shows a configuration in which an electromagnetic wave absorbing film 24 is provided between the substrate 20 and inductors 12 and 14, and above inductors 12 and 14 (see Figure 18). As shown in Figure 20, the configuration in which an electromagnetic wave absorbing film 24 is provided at the opening 13 of inductor 12 and the opening 15 of inductor 14 (see curve 51) can reduce the magnetic field to the same extent as the configuration in which the electromagnetic wave absorbing film 24 is provided between the substrate 20 and inductors 12 and 14 (see curve 54), even with a small electromagnetic wave absorbing film 24.

[0056] As described above, an electromagnetic wave absorbing film 24 is provided. When the electromagnetic wave absorbing film 24 is provided on the passive elements 11 of the inductor 12 and inductor 14, the electromagnetic wave absorbing film 24 may be provided directly on the passive elements 11, or the interlayer insulating film 22 described above may be provided between the passive elements 11 and the electromagnetic wave absorbing film 24. The electromagnetic wave absorbing film 24 may also be provided with the passive elements 11 surrounded by an electrical insulating layer. In this way, there may be another layer between the passive elements 11 and the electromagnetic wave absorbing film 24. Furthermore, as described above, the interlayer insulating film 22 and the electrical insulating layer have, for example, a real part μ' of the complex relative permeability μ that is 1, and a complex part μ'' of the complex relative permeability μ that is zero.

[0057] <Other configurations> The antenna can be any of the various antennas used in 5G (Generation) communication standards that utilize a frequency band of 28GHz to 80GHz. For example, patch antennas, dipole antennas, and phased array antennas can be used as antennas. The antenna is made of, for example, copper or aluminum. The antenna thickness is preferably 20 to 50 μm. For example, when using printed circuit boards such as Flame Retardant Type 1 to Type 5 (FR-1 to FR-5), the thickness of the copper wiring is determined by the standard, and the antenna thickness should conform to the thickness of the copper wiring. Alternatively, the antenna thickness may conform to the thickness of the copper foil in copper-clad laminates as specified in JIS (Japanese Industrial Standards) C 6484:2005 (see Table 6 of JIS C 6484:2005, etc.). Furthermore, when the antenna is formed from copper using electroplating, the antenna thickness should preferably be the film thickness achievable by the electroplating.

[0058] Examples of semiconductor devices include the following: Semiconductor devices are not particularly limited and include, for example, logic LSIs (Large Scale Integration) (e.g., ASICs (Application Specific Integrated Circuits), FPGAs (Field Programmable Gate Arrays), ASSPs (Application Specific Standard Products), etc.), microprocessors (e.g., CPUs (Central Processing Units), GPUs (Graphics Processing Units), etc.), memory (e.g., DRAM (Dynamic Random Access Memory), HMCs (Hybrid Memory Cubes), MRAM (Magnetic RAM), PCM (Phase-Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory (NAND (Not AND) flash), etc.), power devices, analog ICs (Integrated Circuits) (e.g., DC (Direct Current)-DC (Direct Current) converters, insulated gate bipolar transistors (IGBTs), etc.), A / D converters, MEMS (Micro Electro Mechanical) Systems), (e.g., acceleration sensors, pressure sensors, transducers, gyroscopes, etc.), power amplifiers, wireless (e.g., GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), etc.), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (Complementary Metal Oxide)Examples include semiconductors, passive devices, bandpass filters, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), and BB (Broadband).

[0059] [Antenna-in-package and method for manufacturing an antenna-in-package] An antenna-in-package configuration consists of an antenna and a Front End Module (FEM) stacked on top of each other. In wireless circuits, the FEM is the arithmetic circuit portion that includes CMOS transistors that control the transmission and reception of signals on the antenna side. For example, as shown in Figure 21, the antenna-in-package 60 has a configuration in which an array antenna 61, an A / D circuit 62, a memory 63, an ASIC 64, etc. are stacked on a substrate 20. The array antenna 61 has, for example, four antennas 65. For example, all four antennas 65 are identical. The configuration of the array antenna 61 and antennas 65 is not particularly limited and is appropriately determined according to the frequency band to be transmitted or received, the polarization direction to be received, etc. Also, although the array antenna 61 has four antennas 65, it is not limited to this. A single antenna may be used instead of an array antenna 61. As for the manufacturing method of the antenna-in-package, other than the manufacturing method of the electromagnetic wave absorbing film 24, known methods can be used as appropriate for the antenna, A / D circuit, memory, ASIC, etc. Furthermore, this is not limited to antenna-in packages; it can also be applied to radar and other systems.

[0060] The following describes how to manufacture the photosensitive composition and the structure. The photosensitive composition may be a negative-type photosensitive composition or a positive-type photosensitive composition. In the case of a negative-type photosensitive composition, it often contains polymerizable compounds as described later. The photosensitive composition is a composition used for forming an electromagnetic wave absorbing film. When the real part of the complex relative permeability μ of an electromagnetic wave absorbing film formed using the composition is μ' and the complex part is μ'', the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies any one of the following requirements 1 to 3. Requirement 1: μ'' at a frequency of 28 GHz is 0.1 to 10 Requirement 2: μ'' at a frequency of 47 GHz is 0.1 to 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2 Furthermore, the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film formed using the composition can also be measured in the same manner as the real part μ' and the complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film described above. Below, we will first describe in detail the various components contained in the photosensitive composition.

[0061] [Magnetic particles] The photosensitive composition contains magnetic particles. The magnetic particles may be of one type or multiple types. Magnetic particles contain metal atoms. In this specification, the above-mentioned metal atoms also include metalloid atoms such as boron, silicon, germanium, arsenic, antimony, and tellurium. The above-mentioned metal atoms may be included in magnetic particles as an alloy containing a metal element (preferably a magnetic alloy), a metal oxide (preferably a magnetic oxide), a metal nitride (preferably a magnetic oxide), or a metal carbide (preferably a magnetic carbide). The content of metal atoms relative to the total mass of magnetic particles is preferably 50 to 100% by mass, more preferably 75 to 100% by mass, and even more preferably 95 to 100% by mass.

[0062] The above metal atoms are not particularly limited, but it is preferable that they include at least one metal atom selected from the group consisting of Fe, Ni, and Co. The content of at least one metal atom selected from the group consisting of Fe, Ni, and Co (or the total content if multiple types are included) is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more, relative to the total mass of metal atoms in the magnetic particles. The upper limit of the above content is not particularly limited, for example, 100% by mass or less, preferably 98% by mass or less, and more preferably 95% by mass or less.

[0063] Magnetic particles may contain materials other than Fe, Ni, and Co. Specific examples include Al, Si, S, Sc, Ti, V, Cu, Y, Mo, Rh, Pd, Ag, Sn, Sb, Te, Ba, Ta, W, Re, Au, Bi, La, Ce, Pr, Nd, P, Zn, Zr, Mn, Cr, Nb, Pb, Ca, B, C, N, and O. If the magnetic particles contain metal atoms other than Fe, Ni, and Co, it is preferable that they contain one or more selected from the group consisting of Si, Cr, B, and Mo.

[0064] Examples of magnetic particles include alloys such as Fe-Co alloys (preferably Permendur), Fe-Ni alloys (e.g., Permalloy), Fe-Zr alloys, Fe-Mn alloys, Fe-Si alloys, Fe-Al alloys, Ni-Mo alloys (preferably Supermalloy), Fe-Ni-Co alloys, Fe-Si-Cr alloys, Fe-Si-B alloys, Fe-Si-Al alloys (preferably Sendust), Fe-Si-BC alloys, Fe-Si-B-Cr alloys, Fe-Si-B-Cr-C alloys, Fe-Co-Si-B alloys, Fe-Si-B-Nb alloys, Fe nanocrystalline alloys, Fe-based amorphous alloys and Co-based amorphous alloys, as well as ferrites such as spinel ferrite (preferably Ni-Zn ferrite, Mn-Zn ferrite) and hexagonal ferrite (preferably barium ferrite, magnetoplumbite-type hexagonal ferrite). The above alloy may also be amorphous. From the viewpoint of radio wave absorption performance, preferred hexagonal ferrites include substitutional magnetoplumbite-type hexagonal ferrites in which some of the iron atoms in the hexagonal ferrite are replaced by aluminum atoms. Furthermore, Ba-Fe-Al alloys, Ca-Fe-Al alloys, or Pb-Fe-Al alloys, in which some of the alloy is replaced with Ba, Ca, or Pb, are even more preferred from the viewpoint of radio wave absorption in the high frequency band. Magnetic particles may be used individually or in combination of two or more types.

[0065] A surface layer may be provided on the surface of the magnetic particles. By having a surface layer on the magnetic particles, functions corresponding to the material of the surface layer can be imparted to the magnetic particles. Examples of surface layers include inorganic layers or organic layers.

[0066] The thickness of the surface layer is not particularly limited, but 3 to 1000 nm is preferred because it allows the surface layer to perform its function more effectively.

[0067] The average primary particle diameter of the magnetic particles is preferably 20 to 1000 nm. The number-average particle diameter of the magnetic particles is more preferably 20 to 500 nm from the viewpoint of dispersion in the composition and pattern resolution. The average primary particle diameter of magnetic particles is measured by photographing the magnetic particles using a transmission electron microscope at a magnification of 100,000x, printing the resulting image onto photographic paper at a total magnification of 500,000x, tracing the contours of the particles (primary particles) with a digitizer, and calculating the diameter of a circle with the same area as the traced region (circular area phase diameter). Here, primary particles refer to independent particles that are not aggregated. The imaging using the transmission electron microscope shall be performed using the direct method with an accelerating voltage of 300kV. Transmission electron microscope observation and measurement can be performed, for example, using a Hitachi H-9000 transmission electron microscope and Carl Zeiss KS-400 image analysis software. The average primary particle diameter is calculated by arithmetic mean of the particle diameters of at least 100 primary particles of magnetic particles measured as described above.

[0068] The shape of the magnetic particles is not particularly limited and may be plate-shaped, elliptical, spherical, or amorphous.

[0069] The content of the above magnetic particles is preferably 20 to 99% by mass, more preferably 25 to 80% by mass, and even more preferably 30 to 60% by mass, based on the total mass of the composition. The content of the above magnetic particles is preferably 30 to 99% by mass, more preferably 30 to 80% by mass, and even more preferably 40 to 70% by mass, based on the total solid content of the composition. The total solid content of a composition refers to the components that make up the magnetic pattern, excluding the solvent. Even if a component of the magnetic pattern is liquid, it is considered a solid component.

[0070] [Polymerizable compound] The photosensitive composition may contain polymerizable compounds. Polymerizable compounds are compounds having polymerizable groups (photopolymerizable compounds), and examples include compounds containing a group with an ethylenically unsaturated bond (hereinafter also simply referred to as "ethylenically unsaturated group") and compounds having an epoxy group and / or an oxetanyl group, with compounds containing an ethylenically unsaturated group being preferred. The composition preferably contains a low molecular weight compound containing an ethylenically unsaturated group as a polymerizable compound. The polymerizable compounds described above are preferably compounds containing one or more ethylenically unsaturated bonds, more preferably compounds containing two or more, even more preferably compounds containing three or more, and particularly preferably compounds containing five or more. The upper limit is, for example, 15 or less. Examples of ethylenically unsaturated groups include vinyl groups, (meth)allyl groups, and (meth)acryloyl groups.

[0071] The polymerizable compounds described above are preferably dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol penta(meth)acrylate (commercially available as KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth)acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., A-DPH-12E; manufactured by Shin Nakamura Chemical Co., Ltd.), and structures in which the (meth)acryloyl group of these compounds is mediated by an ethylene glycol residue or a propylene glycol residue (for example, SR454 and SR499, commercially available from Sartomer). These oligomer types can also be used. In addition, NK ester A-TMMT (pentaerythritol tetraacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd.), KAYARAD RP-1040, KAYARAD DPEA-12LT, KAYARAD DPHA LT, KAYARAD RP-3060, and KAYARAD DPEA-12 (all trade names, manufactured by Nippon Kayaku Co., Ltd.) may also be used.

[0072] The polymerizable compounds described above may have acidic groups such as carboxylic acid groups, sulfonic acid groups, and phosphoric acid groups. The acid value of the polymerizable compound containing the acid group is preferably 0.1 to 40 mg KOH / g, and more preferably 5 to 30 mg KOH / g.

[0073] The content of polymerizable compounds in the composition is not particularly limited, but is preferably 1 to 40% by mass, more preferably 5 to 30% by mass, and even more preferably 10 to 25% by mass, relative to the total solid content of the composition.

[0074] The composition may also contain other materials besides the magnetic particles and polymerizable compounds described above.

[0075] [resin] The composition may also contain resin. Examples of resins include (meth)acrylic resins, epoxy resins, ene-thiol resins, polycarbonate resins, polyether resins, polyarylate resins, polysulfone resins, polyethersulfone resins, polyphenylene resins, polyarylene etherphosphine oxide resins, polyimide resins, polyamide-imide resins, polyolefin resins, cyclic olefin resins, polyester resins, styrene resins, and phenoxy resins. These resins may be used individually or in combination of two or more.

[0076] One preferred embodiment of the resin is a resin having an unsaturated double bond (for example, an ethylenically unsaturated double bond) and a polymerizable group such as an epoxy group or an oxetanyl group. Furthermore, one preferred embodiment of the resin is a resin having acidic groups, basic groups, or amide groups. Resins having acidic groups, basic groups, or amide groups readily exhibit the function of a dispersant for dispersing magnetic particles. Examples of acidic groups include carboxyl groups, phosphate groups, sulfol groups, and phenolic hydroxyl groups, with carboxyl groups being preferred. Basic groups include amino groups (ammonia, primary amines, or secondary amines with one hydrogen atom removed) and imino groups. In particular, the resin preferably has a carboxyl group or an amide group.

[0077] If the resin has acidic groups, the acid value of the resin is preferably 10 to 500 mg KOH / g, and more preferably 30 to 400 mg KOH / g.

[0078] As for the resin, it is preferable to use a resin that has improved dispersibility in the composition and a solubility in the solvent of 10 g / L or more, and more preferable to use a resin that has a solubility in the solvent of 20 g / L or more. The upper limit of the solubility of the resin in the solvent is preferably 2000 g / L or less, and more preferably 1000 g / L or less. The solubility of a resin in a solvent refers to the amount of resin (in grams) that dissolves in 1 liter of solvent at 25°C.

[0079] The resin content is preferably 0.1 to 30% by mass, more preferably 1 to 25% by mass, and even more preferably 5 to 20% by mass, based on the total mass of the composition.

[0080] One preferred embodiment of the resin is a resin that functions as a dispersant for dispersing magnetic particles in the composition (hereinafter also referred to as "dispersion resin"). The effects of the present invention are further enhanced by using a dispersion resin.

[0081] [Resin containing repeating units including graft chains] Examples of dispersion resins include resins having repeating units including graft chains (hereinafter also referred to as "Resin A"). However, Resin A can be used for purposes other than to function as a dispersant.

[0082] If the composition contains resin A, the content of resin A is preferably 0.1 to 30% by mass, more preferably 0.5 to 20% by mass, and even more preferably 1 to 10% by mass, based on the total mass of the composition, in order to achieve superior effects of the present invention.

[0083] • Repeating units including graft chains In repeating units including graft chains, the steric repulsion effect increases as the graft chain length increases, improving the dispersibility of magnetic particles. On the other hand, if the graft chain is too long, the adsorption force to the magnetic particles decreases, and the dispersibility of the magnetic particles tends to decrease. For this reason, the number of atoms excluding hydrogen atoms in the graft chain is preferably 40 to 10,000, more preferably 50 to 2,000, and even more preferably 60 to 500. Here, a graft chain refers to the chain from the base of the main chain (the atom bonded to the main chain in a group branching off from the main chain) to the end of the group branching off from the main chain.

[0084] Furthermore, the graft chains preferably contain a polymer structure, and examples of such polymer structures include poly(meth)acrylate structures (e.g., poly(meth)acrylic structures), polyester structures, polyurethane structures, polyurea structures, polyamide structures, and polyether structures. To improve the interaction between the graft chain and the solvent, and thereby enhance the dispersibility of the magnetic particles, the graft chain is preferably a graft chain comprising at least one selected from the group consisting of polyester structure, polyether structure, and poly(meth)acrylate structure, and more preferably a graft chain comprising at least one of polyester structure and polyether structure.

[0085] Resin A may be a resin obtained using macromonomers containing graft chains (monomers that have a polymer structure and are bonded to the main chain to constitute graft chains). The macromonomers containing graft chains (monomers having a polymer structure that are bonded to the main chain to constitute graft chains) are not particularly limited, but macromonomers containing reactive double bond groups can be preferably used.

[0086] Resin A preferably contains at least one structure selected from the group consisting of methyl polyacrylate, polymethyl methacrylate, and cyclic or chain-like polyesters, more preferably contains at least one structure selected from the group consisting of methyl polyacrylate, polymethyl methacrylate, and chain-like polyesters, and even more preferably contains at least one structure selected from the group consisting of methyl polyacrylate structures, polymethyl methacrylate structures, polycaprolactone structures, and polyvalerolactone structures. Resin A may contain one of the above structures alone, or it may contain a plurality of these structures. Here, a polycaprolactone structure refers to a structure that contains a ring-opened ε-caprolactone as a repeating unit. A polyvalerolactone structure refers to a structure that contains a ring-opened δ-valerolactone as a repeating unit.

[0087] In resin A, the content of repeating units including graft chains is preferably 2 to 100% by mass, more preferably 2 to 90% by mass, and even more preferably 5 to 30% by mass, based on the total mass of resin A. The effects of the present invention are better when the repeating units including graft chains are included within this range.

[0088] • Hydrophobic repeating units Furthermore, resin A may contain hydrophobic repeating units that are different from (i.e., do not correspond to) repeating units containing graft chains. However, in this specification, hydrophobic repeating units are repeating units that do not have acidic groups (e.g., carboxylic acid groups, sulfonic acid groups, phosphate groups, phenolic hydroxyl groups, etc.).

[0089] The hydrophobic repeating units are preferably repeating units derived from (corresponding to) compounds (monomers) with a ClogP value of 1.2 or higher, and more preferably repeating units derived from compounds with a ClogP value of 1.2 to 8. This allows the effects of the present invention to be more reliably expressed.

[0090] The ClogP value is calculated using the "CLOGP" program available from Daylight Chemical Information System, Inc. This program provides a "calculated logP" value derived from the fragment approach by Hansch, Leo (see reference below). The fragment approach is based on the chemical structure of a compound, dividing the chemical structure into substructures (fragments) and estimating the compound's logP value by summing the logP contributions assigned to each fragment. Details are described in the following reference. In this specification, we use ClogP values ​​calculated using the CLOGP v4.82 program. AJ Leo, Comprehensive Medicinal Chemistry, Vol.4, C. Hansch, PG Sammnens, JB Taylor and CA Ramsden, Eds., p.295, Pergamon Press, 1990 C. Hansch & AJ Leo. SUbstituent Constants For Correlation Analysis in Chemistry and Biology. John Wiley & Sons. AJ Leo. Calculating logPoct from structure. Chem. Rev., 93, 1281-1306, 1993.

[0091] logP represents the common logarithm of the partition coefficient P, and is a physical property that quantitatively expresses how an organic compound is distributed in equilibrium between oil (generally 1-octanol) and water, and is expressed by the following formula. logP = log(Coil / Cwater) In the formula, Coil represents the molar concentration of the compound in the oil phase, and Cwater represents the molar concentration of the compound in the aqueous phase. As the value of logP increases in positive terms around 0, oil solubility increases, and as the absolute value increases in negative terms, water solubility increases. There is a negative correlation with the water solubility of organic compounds, and it is widely used as a parameter to estimate the hydrophilicity and hydrophobicity of organic compounds.

[0092] In resin A, the content of hydrophobic repeating units is preferably 10 to 90% by mass, and more preferably 20 to 80% by mass, relative to the total mass of resin A.

[0093] • Functional groups that can form interactions with magnetic particles Resin A may have functional groups that can form interactions with magnetic particles. Resin A preferably further comprises repeating units containing functional groups that can form interactions with magnetic particles. Examples of functional groups that can form interactions with magnetic particles include acidic groups, basic groups, coordinating groups, and reactive functional groups. If resin A contains acidic groups, basic groups, coordinating groups, or reactive functional groups, it is preferable that it contains repeating units containing acidic groups, repeating units containing basic groups, repeating units containing coordinating groups, or repeating units having reactive functional groups, respectively.

[0094] The repeating unit containing an alkali-soluble group as an acid group may be the same as or different from the repeating unit containing the graft chain described above, but the repeating unit containing an alkali-soluble group as an acid group is a different repeating unit from the hydrophobic repeating unit described above (i.e., it does not correspond to the hydrophobic repeating unit described above).

[0095] Examples of acidic groups that can form interactions with magnetic particles include carboxylic acid groups, sulfonic acid groups, phosphoric acid groups, and phenolic hydroxyl groups. At least one of carboxylic acid groups, sulfonic acid groups, phosphorus, and acidic groups is preferred, with carboxylic acid groups being more preferred. Carboxylic acid groups have good adsorption to magnetic particles and high dispersibility. In other words, it is preferable that resin A further contains repeating units comprising at least one of a carboxylic acid group, a sulfonic acid group, and a phosphate group.

[0096] Resin A may have one or more repeating units containing acid groups. If resin A contains repeating units containing acid groups, the content of these units is preferably 5 to 80% by mass, and more preferably 10 to 60% by mass, relative to the total mass of resin A.

[0097] Examples of basic groups that can form interactions with magnetic particles include primary amino groups, secondary amino groups, tertiary amino groups, heterocycles containing N atoms, and amide groups. The preferred basic group is the tertiary amino group because it has good adsorption to magnetic particles and high dispersibility. Resin A may contain one or more of these basic groups. If resin A contains repeating units containing basic groups, the content thereof is preferably 0.01 to 50% by mass, and more preferably 0.01 to 30% by mass, relative to the total mass of resin A.

[0098] Examples of coordinating groups and reactive functional groups that can interact with magnetic particles include acetylacetoxy groups, trialkoxysilyl groups, isocyanate groups, acid anhydrides, and acid chlorides. The preferred functional group is the acetylacetoxy group, which has good adsorption to magnetic particles and high dispersibility of magnetic particles. Resin A may have one or more of these groups. If resin A contains repeating units containing coordinating groups or repeating units containing reactive functional groups, the content of these units is preferably 10 to 80% by mass, and more preferably 20 to 60% by mass, relative to the total mass of resin A.

[0099] • Ethylene unsaturated group Resin A may contain ethylenically unsaturated groups. The ethylenically unsaturated group is not particularly limited, but examples include (meth)acryloyl, vinyl, and styryl groups, with (meth)acryloyl being preferred. Among resins A, it is preferable that the resin A contains repeating units with ethylenically unsaturated groups in its side chains, and more preferably that the resin A contains repeating units with ethylenically unsaturated groups in its side chains and that are derived from (meth)acrylate (hereinafter also referred to as "(meth)acrylic repeating units with ethylenically unsaturated groups in their side chains"). (Meth)acrylic repeating units containing ethylenically unsaturated groups in their side chains can be obtained, for example, by adding an ethylenically unsaturated compound containing a glycidyl group or an alicyclic epoxy group to the carboxylic acid group in resin A, which contains a (meth)acrylic repeating unit containing a carboxylic acid group. By reacting the ethylenically unsaturated group (glycidyl group or alicyclic epoxy group) introduced in this way, (meth)acrylic repeating units containing ethylenically unsaturated groups in their side chains can be obtained.

[0100] If resin A contains repeating units containing ethylenically unsaturated groups, the content of these units is preferably 30 to 70% by mass, and more preferably 40 to 60% by mass, relative to the total mass of resin A.

[0101] • Other repeating units Furthermore, for the purpose of improving various properties such as film-forming ability, resin A may further have other repeating units having various functions, different from repeating units containing graft chains, hydrophobic repeating units, and repeating units containing functional groups that can form interactions with magnetic particles, provided that the effects of the present invention are not impaired. Other examples of such repeating units include repeating units derived from radical polymerizable compounds selected from acrylonitriles and methacrylonitriles. Resin A may use one or more of these other repeating units, and the content thereof is preferably 0 to 80% by mass, and more preferably 10 to 60% by mass, relative to the total mass of resin A.

[0102] • Physical properties of resin A The acid value of resin A is not particularly limited, but for example, 0 to 400 mg KOH / g is preferred, 10 to 350 mg KOH / g is more preferred, 30 to 300 mg KOH / g is even more preferred, and 50 to 200 mg KOH / g is particularly preferred. If the acid value of resin A is 50 mgKOH / g or higher, the sedimentation stability of magnetic particles can be further improved.

[0103] In this specification, the acid value can be calculated, for example, from the average content of acid groups in the compound. Furthermore, a resin having a desired acid value can be obtained by changing the content of repeating units containing acid groups in the resin.

[0104] The weight-average molecular weight of resin A is not particularly limited, but for example, it is preferably 3,000 or more, more preferably 4,000 or more, even more preferably 5,000 or more, and particularly preferably 6,000 or more. As for the upper limit, for example, it is preferably 300,000 or less, more preferably 200,000 or less, even more preferably 100,000 or less, and particularly preferably 50,000 or less. Resin A can be synthesized based on known methods.

[0105] <Alkali-soluble resin> The resin may include an alkali-soluble resin. In this specification, an alkali-soluble resin means a resin containing a group that promotes alkali solubility (an alkali-soluble group, such as an acidic group like a carboxylic acid group), and means a resin different from resin A already described.

[0106] Examples of alkali-soluble resins include resins containing at least one alkali-soluble group in their molecule, such as polyhydroxystyrene resins, polysiloxane resins, (meth)acrylic resins, (meth)acrylamide resins, (meth)acrylic / (meth)acrylamide copolymers, epoxy resins, and polyimide resins.

[0107] Specific examples of alkali-soluble resins include copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds. The unsaturated carboxylic acids are not particularly limited, but examples include monocarboxylic acids such as (meth)acrylic acid, crotonic acid, and vinylacetic acid; dicarboxylic acids such as itaconic acid, maleic acid, and fumaric acid, or their acid anhydrides; and polycarboxylic acid monoesters such as phthalic acid mono(2-(meth)acryloyloxyethyl); and the like.

[0108] Examples of copolymerizable ethylenically unsaturated compounds include methyl (meth)acrylate. Furthermore, compounds described in paragraph 0027 of Japanese Patent Publication No. 2010-097210 and paragraphs 0036-0037 of Japanese Patent Publication No. 2015-068893 can also be used, and the above information is incorporated herein.

[0109] Furthermore, copolymerizable ethylenically unsaturated compounds containing ethylenically unsaturated groups in their side chains may be used in combination. In other words, alkali-soluble resins may contain repeating units with ethylenically unsaturated groups in their side chains. The preferred ethylenically unsaturated group in the side chain is the (meth)acrylic acid group. Repeating units containing ethylenically unsaturated groups in their side chains can be obtained, for example, by adding an ethylenically unsaturated compound containing a glycidyl group or an alicyclic epoxy group to a carboxylic acid group in a (meth)acrylic repeating unit containing a carboxylic acid group.

[0110] As the alkali-soluble resin, an alkali-soluble resin containing a curable group is also preferred. Examples of the curable groups mentioned above include, but are not limited to, ethylenically unsaturated groups (e.g., (meth)acryloyl groups, vinyl groups, and styryl groups) and cyclic ether groups (e.g., epoxy groups, oxetanyl groups). In particular, ethylenically unsaturated groups are preferred as curable groups, and (meth)acryloyl groups are more preferred, as they allow polymerization control via radical reactions. As alkali-soluble resins containing curable groups, alkali-soluble resins having curable groups in their side chains are preferred. Examples of alkali-soluble resins containing curable groups include Dianaal® NR series (manufactured by Mitsubishi Chemical Corporation), Photomer 6173 (COOH-containing polyurethane acrylic oligomer, manufactured by Diamond Shamrock Co., Ltd.), Viscoat R-264, KS Resist 106 (both manufactured by Osaka Organic Chemical Industry Co., Ltd.), Cyclomer P series (e.g., ACA230AA), Plaxel CF200 series (both manufactured by Daicel Corporation), Ebecryl 3800 (manufactured by Daicel Ornex Corporation), and Acrycure RD-F8 (manufactured by Nippon Shokubai Co., Ltd.).

[0111] Polyimide precursors can also be used as alkali-soluble resins. A polyimide precursor refers to a resin obtained by an addition polymerization reaction between a compound containing an acid anhydride group and a diamine compound at 40-100°C.

[0112] The acid value of the alkali-soluble resin is not particularly limited, but is preferably 30 to 500 mg KOH / g, and more preferably 50 to 200 mg KOH / g or higher.

[0113] If the composition contains an alkali-soluble resin, the content of the alkali-soluble resin is preferably 0.1 to 40% by mass, more preferably 0.5 to 30% by mass, and even more preferably 1 to 20% by mass, based on the total mass of the composition.

[0114] 〔solvent〕 The composition may contain a solvent. Examples of solvents include water and organic solvents, with organic solvents being preferred. From the standpoint of coatability, the boiling point of the solvent is preferably 100 to 400°C, more preferably 150 to 300°C, and even more preferably 170 to 250°C. In this specification, unless otherwise specified, boiling point refers to the standard boiling point.

[0115] Examples of organic solvents include acetone, methyl ethyl ketone, cyclohexane, ethyl acetate, ethylene dichloride, tetrahydrofuran, toluene, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, acetylacetone, cyclohexanone, cyclopentanone, diacetone alcohol, ethylene glycol monomethyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol monoisopropyl ether, and ethylene glycol monobutyl ether. Examples include, but are not limited to, acetate, 1,4-butanediol diacetate, 3-methoxypropanol, methoxymethoxyethanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, 3-methoxypropyl acetate, N,N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, ethyl acetate, butyl acetate, methyl lactate, N-methyl-2-pyrrolidone, and ethyl lactate.

[0116] The solvent content is preferably 1 to 60% by mass, more preferably 2 to 50% by mass, and even more preferably 3 to 40% by mass, based on the total mass of the composition, in order to achieve superior effects of the present invention.

[0117] [Polymerization initiator] The composition may contain a polymerization initiator. The polymerization initiator is not particularly limited, and known polymerization initiators can be used. Examples of polymerization initiators include photopolymerization initiators and thermal polymerization initiators, with photopolymerization initiators being preferred. In particular, so-called radical polymerization initiators are preferred as polymerization initiators. The content of the polymerization initiator in the composition is not particularly limited, but is preferably 0.5 to 15% by mass, more preferably 1.0 to 10% by mass, and even more preferably 1.5 to 8.0% by mass, relative to the total solid content of the composition.

[0118] If the composition is a positive-type photosensitive composition, it is preferable that the composition contains a novolac resin and a quinone diazide group-containing compound. Novolac resins are resins obtained by condensing phenols and aldehydes using an acid catalyst. Examples of novolac resins include phenol novolac resins, cresol novolac resins, xylinol novolac resins, resorcinol novolac resins, and naphthol novolac resins. The quinone diazide group-containing compound may have, for example, a 1,2-quinone diazide group or a 1,2-naphthoquinone diazide group as the quinone diazide group.

[0119] [Other optional ingredients] The composition may further contain other optional components in addition to those described above. Examples include surfactants, polymerization inhibitors, antioxidants, sensitizers, co-sensitizers, crosslinking agents (curing agents, e.g., hexamethoxymelamine), curing accelerators, thermosetting accelerators, plasticizers, diluents, oil-sensing agents, and rubber components. Furthermore, known additives such as adhesion promoters to the substrate surface and other auxiliary agents (e.g., defoamers, flame retardants, leveling agents, peel accelerators, antioxidants, fragrances, surface tension modifiers, and chain transfer agents) may be added as needed.

[0120] <<Surfactants>> Examples of surfactants include fluorinated surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone surfactants. Regarding surfactants, those described in paragraphs 0238-0245 of International Publication No. 2015 / 166779 are included herein.

[0121] [Method for manufacturing the structure] The method for manufacturing the structure of the present invention comprises the following steps 1 and 2. Step 1: A step of applying a photosensitive composition containing magnetic particles to a substrate on which multiple passive elements are arranged, or to a substrate before multiple passive elements are arranged, to form a composition layer. Step 2: A process to form an electromagnetic wave absorbing film by subjecting the composition layer to exposure treatment and development treatment. The following details the procedures for steps 1 and 2.

[0122] [Process 1] In step 1, a photosensitive composition containing magnetic particles is applied to a substrate on which multiple passive elements are arranged, or to a substrate before multiple passive elements are arranged, to form a composition layer. The composition layer can be formed at the positions shown in the manufacturing methods for each example of the structure described above. The compositions used are as described above.

[0123] The method of coating the composition is not particularly limited and can include various coating methods such as slit coating, inkjet coating, rotary coating, casting coating, roll coating, and screen printing. After application, a drying process may be carried out as needed. Drying (pre-baking) can be done, for example, on a hot plate or in an oven at a temperature of 50 to 140°C for 10 to 1800 seconds. The thickness of the composition layer is preferably 1 to 10,000 μm, more preferably 10 to 1,000 μm, and even more preferably 15 to 800 μm.

[0124] (Process 2) Step 2 is a step in which the composition layer is subjected to exposure treatment and development treatment to form an electromagnetic wave absorbing film. The method of exposure treatment is not particularly limited, but it is preferable to irradiate the composition layer with light through a photomask having patterned openings. The patterned openings of the photomask are arranged so as to form an electromagnetic wave absorbing film of the predetermined shape described above. Exposure is preferably carried out by irradiation with radiation. Preferred radiation for exposure includes ultraviolet rays such as g-rays, h-rays, and i-rays, and a high-pressure mercury lamp is preferred as the light source. The irradiation intensity should be 5 to 1500 mJ / cm². 2 Preferably, 10 to 1000 mJ / cm² 2 This is preferable.

[0125] It is preferable to perform a heat treatment (post-bake) after the exposure treatment. Post-baking is a heat treatment after development to ensure complete curing. The heating temperature is preferably 240°C or lower, and more preferably 220°C or lower. There is no lower limit, but considering efficient and effective processing, 50°C or higher is preferred, and 100°C or higher is more preferred. Post-baking can be carried out continuously or in batches using heating means such as hot plates, convection ovens (hot air circulation dryers), and high-frequency heaters.

[0126] There are no particular restrictions on the type of developer used in the developing process, but an alkaline developer is preferable as it will not damage the circuitry. The development temperature is, for example, 20-30°C. The development time is typically 20 to 90 seconds. In recent years, development has sometimes been extended to 120 to 180 seconds to better remove residue. Furthermore, to further improve residue removal, the developer solution may be shook out every 60 seconds, and the process of supplying fresh developer solution may be repeated several times.

[0127] As the alkaline developer, an alkaline aqueous solution prepared by dissolving an alkaline compound in water to a concentration of 0.001 to 10% by mass (preferably 0.01 to 5% by mass) is preferred. Examples of alkaline compounds include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, pyrrole, piperidine, and 1,8-diazabicyclo[5.4.0]-7-undecene (of which organic alkalis are preferred). When used as an alkaline developer, the film is generally washed with water after development.

[0128] The present invention is basically configured as described above. Although the structure, method for manufacturing the structure, and composition of the present invention have been described in detail above, the present invention is not limited to the embodiments described above, and various improvements or modifications may be made without departing from the spirit of the present invention. [Examples]

[0129] The features of the present invention will be further described in detail below with reference to examples. The materials, reagents, amounts and proportions of substances, and procedures shown in the following examples can be modified as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the following examples. In this embodiment, a configuration was used in which inductor 14 (see Figure 1) and inductor 12 (see Figure 1) were placed spaced apart on the substrate. The size of the substrate was 700 μm × 300 μm. The inductor 14 has an octagonal outer shape, with a maximum outer width of 110 μm and a maximum inner width of 80 μm. The inductor 14 has an opening similar in shape to the inductor 14, and the opening is octagonal. The maximum width of the opening is 56 μm. The thickness of the strip-shaped member of the inductor 14 was set to 2 μm and the width to 15 μm. Note that the width of the input part of the inductor 14 was set to 20 μm. The number of turns of the inductor 14 was set to 1.75 turns, and the gap between the turns was set to 5 μm. The resonance frequency of the inductor 14 is 60 GHz.

[0130] The inductor 12 had an octagonal outer shape, with a maximum outer width of 110 μm and a maximum inner width of 80 μm. The thickness of the strip member of the inductor 12 was set to 2 μm, and the width was set to 15 μm. The inductor 12 had an opening that was similar in shape to the outer shape of the inductor 12, and the opening was octagonal. The maximum width of the opening was set to 56 μm. The distance between the center of the opening of the inductor 14 and the center of the opening of the inductor 12 was set to 125 μm. Both the inductor 14 and the inductor 12 were arranged at a position 6.7 μm from the surface of the substrate.

[0131] [Electric field attenuation and magnetic field attenuation] In Examples 1 to 30 and Comparative Examples 1 to 3, the electric field and magnetic field generated by the high frequency that occurs when a 60 GHz high frequency signal is supplied to the inductor 14 were measured at the position of the inductor 12. Furthermore, the electric field and magnetic field were evaluated based on the volume of the electromagnetic wave absorption film, respectively. The electric field attenuation and magnetic field attenuation were calculated in units of dB (decibel), which is the integrated value of the electric field and magnetic field at a position 125 μm away when a high frequency signal with a frequency of 60 GHz is supplied to the inductor 14. The calculated value is a negative value. Note that the position 125 μm away corresponds to the position of the center of the opening of the inductor. The integrated value of the electric field and magnetic field was calculated by solving the Helmholtz wave equations shown in the following mathematical formulas (a) and (b) using the RF module of COMSOL Multiphysics (registered trademark) and the physical study of electromagnetic waves (frequency domain). Note that in the following mathematical formulas (a) and (b), j represents an imaginary number. Respectively, ε r = ε’ - ε”×j, ε’ is the real part of the dielectric constant, and ε” is the imaginary part of the dielectric constant. μr = μ’ - μ” ×j, μ” is the real part of the magnetic permeability, and μ” is the imaginary part of the magnetic permeability. k0 = ω(μ0·ε0) 1 / 2 (m-1 η0 = (μ0·ε0) where ω is angular velocity, i is current, μ0 is permeability in vacuum, and ε0 is permittivity in vacuum. 1 / 2 (Ω) μ0 = 1.257 × 10 -6 (H / m), ε0 = 8.854 × 10 -12 (F / m)

[0132]

number

[0133]

number

[0134] The integrated value of the electric field (dB) is converted to the volume (mm²) of the electromagnetic wave absorbing film. 3 The value obtained by dividing by ) was evaluated according to the following evaluation criteria. Furthermore, the integrated value of the magnetic field (dB) is measured by the volume (mm²) of the electromagnetic wave absorbing film. 3 The value obtained by dividing by ) was evaluated according to the following evaluation criteria. Evaluation Criteria A: Less than -3000 (dB / mm 3 ) B: -3000 or more and less than -150 (dB / mm 3 ) C: -150 or more and less than -10 (dB / mm 3 ) D: -10 or more (dB / mm 3 ) For Examples 21, 22, 23, 24, and 27-30, the above measurements were performed by changing the 60GHz frequency to 47GHz and 28GHz, respectively, as shown in Tables 10 and 11.

[0135] [Adjacent arrangement of electromagnetic wave absorbing films] Furthermore, it is assumed that inductors 12 and 14 can be placed adjacent to each other if an electromagnetic wave absorbing film has been formed at the predetermined position, and this is indicated as "placeable" in Tables 7 to 12 below. On the other hand, inductors 12 and 14 that cannot have an electromagnetic wave absorbing film formed at a predetermined position cannot be placed adjacent to each other, and are marked as "cannot be placed" in Tables 7 to 12 below.

[0136] <Examples 1-30, Comparative Examples 1-3> Compositions were prepared by mixing the various components shown in Tables 1 to 6. The ingredients used are as follows: (Magnetic particles) Barium ferrite-1: Synthesized by the following method. 400.0 g of water kept warm at 35°C was stirred. To the stirring water, a raw material aqueous solution prepared by dissolving 57.0 g of iron(III) chloride hexahydrate [FeCl3·6H2O], 25.4 g of barium chloride dihydrate [BaCl2·2H2O], and 10.2 g of aluminum chloride hexahydrate [AlCl3·6H2O] in 216.0 g of water, and a solution prepared by adding 113.0 g of water to 181.3 g of a 5 mol / L sodium hydroxide aqueous solution were added in their entirety at a flow rate of 10 mL / min, with the timing of addition being the same, to obtain the first solution. Next, the temperature of the first solution was adjusted to 25°C, and while maintaining this temperature, 39.8 g of a 1 mol / L sodium hydroxide aqueous solution was added to obtain the second solution. The pH of the obtained second solution was 10.5 ± 0.5. The pH was measured using a benchtop pH meter (F-71, manufactured by Horiba, Ltd.). Next, the second liquid was stirred for 15 minutes to obtain a liquid containing a precipitate that would become a precursor of magnetoplumbite-type hexagonal ferrite (precursor-containing liquid). Next, the precursor-containing liquid was subjected to centrifugation three times (rotation speed: 2000 rpm (revolutions per minute), rotation time: 10 minutes), and the resulting precipitate was collected and washed with water. Next, the recovered precipitate was dried in an oven at an internal ambient temperature of 95°C for 12 hours to obtain a precursor powder. Next, the precursor powder was placed in a muffle furnace, and under an atmospheric environment, the furnace temperature was set to 1100°C and fired for 4 hours to obtain a solid calcined body. Next, the obtained calcined body was crushed for 90 seconds using a cutter mill (Wonder Crusher WC-3 manufactured by Osaka Chemical Co., Ltd.) with the variable speed dial of the crusher set to "5" (rotation speed: approximately 10,000 to 15,000 rpm) to obtain magnetic powder (barium ferrite-1).

[0137] The crystalline structure of the magnetic material constituting each of the above magnetic powders was confirmed by X-ray diffraction analysis. The X'Pert Pro powder X-ray diffractometer from PANalytical was used as the measurement device. The measurement conditions are shown below. -Measurement conditions- X-ray source: CuKα ray [Wavelength: 1.54 Å (0.154 nm), Output: 40 mA, 45 kV] Scan range: 20° < 2θ < 70° Scan interval: 0.05° Scan speed: 0.75° / min The results of the above X-ray diffraction analysis confirmed that the obtained magnetic powder has a magnetoplumbite-type crystal structure and is a single-phase magnetoplumbite-type hexagonal ferrite powder that does not contain any crystal structures other than the magnetoplumbite type.

[0138] Barium ferrite-2: Synthesized by the following method. The fine particle grinding process was carried out using BMXF-5 and BGRIMM (Beljing General Research Institute of Mining & Metallurgy) magnetic materials. Specifically, 50g of the magnetic powder, 100g of water, and 500g of 1mm diameter zirconium beads were placed in a 250ml shaker-sized poly bottle (with a Teflon® seal around the mouth) and stirred in a paint shaker for 18 hours. The mixture was filtered through a nylon mesh PA-77μm (AS ONE) and the filtrate was collected. After several washes with water, the supernatant water was removed, and the mixture was dried in a dry oven at 80°C for 8.5 hours to obtain barium ferrite-2. Barium ferrite-3: Synthesized by the following method. Using MC-617 (manufactured by Toda Kogyo Co., Ltd.) magnetic material, a micronization process was carried out in the same manner as for barium ferrite-2 to obtain barium ferrite-3.

[0139] • Strontium ferrite: Synthesized using the following method. 46.3 g of strontium carbonate [SrCO3; manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.], 255.1 g of α-iron(III) oxide [α-Fe2O3; manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.], and 14.8 g of aluminum oxide [Al2O3; manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., average particle size: 40 nm] were stirred for 2 minutes using a Wonder Crush / Mill (model WDL-1: manufactured by Osaka Chemical Co., Ltd.). To the resulting mixture, 300 g of water and 30.0 g of flux (strontium chloride hexahydrate [SrCl2·6H2O; manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.]) were added, and the mixture was stirred for 30 minutes using a Waring blender (model 7011HSJ, manufactured by Waring Corporation). After stirring, the mixture was dried in a drying apparatus with an internal atmosphere temperature of 95°C. Next, the dried mixture was stirred and ground for 2 minutes using the Wonder Crush / Mill described above to obtain a magnetic powder precursor. The obtained precursor was placed in a muffle furnace, and the furnace temperature was set to 1250°C under an atmospheric environment and calcined for 4 hours to obtain a calcined body. The obtained calcined body was stirred and ground for 2 minutes using the Wonder Crush / Mill described above, repeatedly washed with water, and then dried in a drying apparatus with an internal atmospheric temperature of 95°C. Subsequently, the magnetic powder was obtained by stirring and grinding it for 2 minutes using the Wonder Crush / Mill described above.

[0140] • Rare-earth-iron-nitrogen-based magnetic materials: Synthesized by the method described in International Publication No. 2008 / 136391. • Yttrium-containing ferrite: After casting using the method described on pages 63-67 of Vol. 50, No. 1 of "Powder and Powder Metallurgy," it was crushed to a particle size of 3 μm. • Epsilon-type iron oxide: Synthesized by the method described in Japanese Patent Publication No. 2016-111341. • Fe-Mn ferrite: Synthesized using the following method. Using M05S (manufactured by Powdertech Co., Ltd.) magnetic material, a micronization process was carried out in the same manner as for barium ferrite-2 described above to obtain Fe-Mn ferrite. The average primary particle size of the Fe-Mn ferrite particles was 100 nm. • Ni-Fe-based magnetic material: Synthesized using the following method. This nickel-iron alloy powder was prepared by a vapor-phase reduction method with a composition ratio of Ni:87% and Fe:13%. The average primary particle size of the Ni-Fe magnetic material was 100 nm. Nickel-zinc ferrite: Synthesized by the method described in Japanese Patent Publication No. 2001-053483.

[0141] (Dispersant) • X-1: A resin represented by the following structural formula. The numerical values ​​in each repeating unit in the following formula represent the content (mass %) relative to the total number of repeating units.

[0142] [ka] • X-2: A resin represented by the following structural formula. The numerical values ​​in each repeating unit in the following formula represent the content (mass %) relative to the total number of repeating units.

[0143] [ka]

[0144] (resin) • B-1: A resin represented by the following structural formula. The numerical values ​​in each repeating unit in the following formula represent the content (mass %) relative to the total number of repeating units.

[0145] [ka]

[0146] • B-2: Cyclomer P(ACA)230AA (manufactured by Daicel Chemical Industries, Ltd.) B-3: Novolac resin Furthermore, B-1 and B-2 mentioned above are alkali-soluble resins.

[0147] (polymerizable compound) • KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd., a mixture of dipentaerythritol hexaacrylate and dipentaerythritol pentaacrylate) • KAYARAD RP-1040 (manufactured by Nippon Kayaku Co., Ltd., tetrafunctional acrylate) • NK Ester A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd., polyfunctional acrylate) • Hexamethoxymethylmelamine (manufactured by Sanwa Chemical Co., Ltd.)

[0148] (Polymerization initiator) • Irgacure OXE-01 (manufactured by BASF Japan Ltd., oxime ester initiator) • Compound with the following structure (1)

[0149] [ka]

[0150] (Photosensitive material) • Benzophenone derivative: 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone diazide-5-sulfonic acid ester (2S: 2 of the 3 hydroxyl groups are substituted, 1 is H) as described in paragraph 0037 of Japanese Patent Publication No. 2002-040651.

[0151] (Antioxidant) • p-Methoxyphenol (manufactured by Sanritsu Chemistry Co., Ltd.) • ADEKA stab AO-80 (manufactured by ADEKA Corporation, a compound with the following structure)

[0152] [ka]

[0153] (Surfactants) · KF-6001 (manufactured by Shin-Etsu Chemical Co., Ltd., a polydimethylsiloxane modified with carbinol at both ends, hydroxyl value 62 mg KOH / g) · Polyfox PF6320 (manufactured by OMNOVA, a fluorosurfactant)

[0154] (solvent) · PGMEA (propylene glycol monomethyl ether acetate)

[0155] The composition prepared above was applied onto a substrate on which inductors 12 and 14 were arranged to form a composition layer. Then, a drying treatment at 100 °C for 2 minutes was performed on the composition layer. The thickness of the composition layer was adjusted by controlling the coating amount of the composition such that the film thickness of the electromagnetic wave absorbing film described in Table 1 was 30 μm. The substrate was a silicon substrate. Next, through a mask having a predetermined opening, so as to form an electromagnetic wave absorbing film as shown in FIG. 8, with a USHIO simple exposure apparatus, exposure treatment of the composition layer was carried out under the condition of 10 mJ / cm 2 As shown in FIG. 8, arranging electromagnetic wave absorbing films at the openings of inductor 12 and inductor 14 respectively was referred to as "inside" in Tables 1-6 below. After exposure, a shower developing treatment at 23 °C for 60 seconds was carried out using a simple developing apparatus (manufactured by Mikasa Co., Ltd.). An aqueous solution with a content of 0.3 mass% of tetramethylammonium hydroxide (TMAH) was used as the developer. After development, a rinsing treatment was carried out using a spin shower with pure water, then spin drying was performed, and then a heat treatment (post bake) at 220 °C for 5 minutes was carried out using a hot plate to form an electromagnetic wave absorbing film with a predetermined shape.

[0156] (Examples 2 - 30) A structure having a magnetic pattern part was manufactured according to the same procedure as in Example 1, except that various conditions such as the type of pattern, the average primary particle diameter of the magnetic particles, and the film thickness of the magnetic pattern part were changed as shown in Tables 1 - 6 described later. The results of each example are summarized and shown in the table described later. In Examples 2 to 9, the arrangement of the electromagnetic wave absorbing film was the same as in Example 1, as shown in Figure 8. Examples 10 and 11 used the arrangement of the electromagnetic wave absorbing film shown in Figure 1. As shown in Figure 1, placing an electromagnetic wave absorbing film between inductor 12 and inductor 14 is referred to as "outside" in Tables 1 to 6 below. Examples 12 and 13 used the electromagnetic wave absorbing film arrangement shown in Figure 10. The electromagnetic wave absorbing film arrangement shown in Figure 10 is a combination of the electromagnetic wave absorbing film arrangement shown in Figure 1 and the electromagnetic wave absorbing film arrangement shown in Figure 8, and is referred to as "inside + outside" in Tables 1 to 6 below.

[0157] Examples 14 and 15 used the arrangement of the electromagnetic wave absorbing film shown in Figure 12. As shown in Figure 12, placing the electromagnetic wave absorbing film on top of inductors 12 and 14 is referred to as "on top" in Tables 1 to 6 below. Examples 16 and 17 used the arrangement of the electromagnetic wave absorbing film shown in Figure 15. As shown in Figure 15, placing the electromagnetic wave absorbing film below the substrate and below inductors 12 and 14 is referred to as "below" in Tables 1 to 6 below. Examples 18-20 used the electromagnetic wave absorbing film arrangement shown in Figure 18. The electromagnetic wave absorbing film arrangement shown in Figure 18 is a combination of the electromagnetic wave absorbing film arrangement shown in Figure 12 and the electromagnetic wave absorbing film arrangement shown in Figure 15, and is referred to as "upper + lower" in Tables 1-6 below. Examples 21-30 used the same arrangement of electromagnetic wave absorbing films as in Example 1, as shown in Figure 8. Examples 25, 27, and 29 used two types of magnetic particles, and their respective particle sizes are indicated in the magnetic particle size column. The particle size of the upper magnetic particles is shown on the left, and the particle size of the lower magnetic particles is shown on the right.

[0158] (Comparative Examples 1-3) Comparative Example 1 was the same as Example 1 except that magnetic particles were not used. Since Comparative Example 1 did not use magnetic particles, no electromagnetic wave absorbing film was formed. Comparative Example 2 is an electromagnetic wave absorbing film of Example 1, in which the structure 100 shown in Figure 22 is composed of a copper layer 102. The copper layer 102 has a thickness of 10 μm and has rectangular openings 102a in the regions of inductor 12 and inductor 14. The size of the openings 102a is V1 × V2. V1 was set to 165 μm and V2 to 155 μm. The copper layer was formed by repeatedly performing processes such as multilayer sputtering, photolithography, dry etching, plasma ashing, copper electroplating, CMP slurry polishing, and wet etching using device microfabrication technology. In addition, in the structure 100 shown in Figure 22, components identical to those in the structure 10 shown in Figures 1 and 2 are given the same reference numerals, and their detailed descriptions are omitted. Comparative Example 3 was the same as Example 1 except that nickel-zinc ferrite was used as the magnetic particle, and the complex part μ'' of the complex relative permeability μ was zero at 60 GHz, 47 GHz, and 28 GHz.

[0159] The complex part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film was measured as follows. As measurement equipment, a vector network analyzer from Keysight (product name: N5225B) and horn antennas from Keycom Corporation (product names: RH12S23, RH06S10) were used. Subsequently, using the free-space method, with the incident angle set to 0° and the sweep frequency band set to 55.0 GHz to 95.0 GHz, one plane of each electromagnetic wave absorbing film was pointed towards the incident side, and S-parameters were measured every 0.1 GHz to determine the complex part μ'' of the complex relative permeability μ at 60 GHz. The complex part μ'' of the complex relative permeability μ at 28 GHz and 47 GHz was determined by changing the sweep frequency band. The "Size of Magnetic Particles" column in Tables 1-6 represents the average primary particle diameter of the magnetic particles.

[0160] [Table 1]

[0161] [Table 2]

[0162] Table 3

[0163] Table 4

[0164] Table 5

[0165] Table 6

[0166] Table 7

[0167] Table 8

[0168] Table 9

[0169] Table 10

[0170] Table 11

[0171] Table 12

[0172] As shown in Tables 7-12, in Examples 1-30, the electromagnetic wave absorbing film could be placed around the passive element, etc., compared to Comparative Examples 1-3. Furthermore, sufficient shielding performance against electric and magnetic fields was obtained. [Explanation of Symbols]

[0173] Structures 10, 10a, 10b, 10c, 10d, 10e, 100 11 Passive elements 12, 14 Inductors 12a, 14a Strip-shaped members 13, 15, 102a opening 20 circuit boards 20a, 22a surface 21 areas 22 Interlayer insulating film 23 Composition layer 24 Electromagnetic wave absorbing film 30 Photomasks 31a Mask section 31b area 50, 51, 52, 53, 54, 55, 56 curves 60 Antenna-in-Package 61 Array Antenna 62 A / D circuit 63 memory 64 ASIC 65 Antenna 102 Copper layer

Claims

1. circuit board and A plurality of passive elements arranged on the substrate, The substrate comprises an electromagnetic wave absorbing film located only in the region between opposing passive elements on the substrate, among a plurality of passive elements arranged on the substrate. The passive element is selected from the group consisting of inductors and baluns. The electromagnetic wave absorbing film contains magnetic particles, When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A structure wherein, when a high-frequency signal with a frequency of 28 GHz is supplied to one of the multiple passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to one of the multiple passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to one of the multiple passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

2. circuit board and A plurality of coil-shaped passive elements are arranged on the substrate, each having an opening that opens to the surface of the substrate, The substrate is arranged with an electromagnetic wave absorbing film located at the opening of at least one of the coil-shaped passive elements, among a plurality of coil-shaped passive elements. The coil-shaped passive element is selected from the group consisting of inductors and baluns. The electromagnetic wave absorbing film contains magnetic particles, When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A structure wherein, when a high-frequency signal with a frequency of 28 GHz is supplied to one of the multiple coil-shaped passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to one of the multiple coil-shaped passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to one of the multiple coil-shaped passive elements, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

3. circuit board and A plurality of passive elements arranged on the substrate, The system includes an electromagnetic wave absorbing film provided between the substrate and the passive element, and at least between the substrate and the passive element on the side of the passive element facing the substrate, The passive element is selected from the group consisting of inductors and baluns. The electromagnetic wave absorbing film contains magnetic particles, When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A structure wherein, when a high-frequency signal with a frequency of 28 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

4. The structure according to claim 2, wherein the electromagnetic wave absorbing film is provided in the region on the substrate between a plurality of coil-shaped passive elements arranged on the substrate.

5. The structure according to claim 3, wherein the electromagnetic wave absorbing film is provided between the substrate and the passive element, and on the side of the passive element opposite the substrate.

6. The structure according to any one of claims 1 to 5, wherein the magnetic particles contain at least one metallic element selected from Ni, Co, and Fe, and have an average primary particle diameter of 20 to 1000 nm.

7. The structure according to any one of claims 1 to 6, wherein the electromagnetic wave absorbing film has a thickness of 300 μm or less.

8. A step of forming a composition layer by coating a photosensitive composition containing magnetic particles onto a substrate on which multiple passive elements are arranged, The process includes: subjecting the composition layer to exposure and development to form an electromagnetic wave absorbing film located only in the region between opposing passive elements among a plurality of passive elements arranged on the substrate; The passive element is selected from the group consisting of inductors and baluns. When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A method for manufacturing a structure, wherein when a high-frequency signal with a frequency of 28 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

9. A step of forming a composition layer by applying a photosensitive composition containing magnetic particles to the opening of at least one of a plurality of coil-shaped passive elements, each having an opening that opens to the surface of the substrate, which is arranged on a substrate; The process includes: subjecting the composition layer to exposure and development to form an electromagnetic wave absorbing film located at the opening of at least one of the multiple coil-shaped passive elements arranged on the substrate; The coil-shaped passive element is selected from the group consisting of inductors and baluns. When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A method for manufacturing a structure, wherein when a high-frequency signal with a frequency of 28 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

10. A step of applying a photosensitive composition containing magnetic particles onto a substrate to form a composition layer, The process involves subjecting the composition layer to exposure and development treatments to form an electromagnetic wave absorbing film on the substrate, The process includes the step of forming a plurality of passive elements on the electromagnetic wave absorbing film, The passive element is selected from the group consisting of inductors and baluns. When the real part of the complex relative permeability μ of the electromagnetic wave absorbing film is μ' and the complex part is μ'', A method for manufacturing a structure, wherein when a high-frequency signal with a frequency of 28 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 1; when a high-frequency signal with a frequency of 47 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 2; and when a high-frequency signal with a frequency of 60 GHz is supplied to the inductor, the complex number part μ'' of the complex relative permeability μ of the electromagnetic wave absorbing film satisfies requirement 3. Requirement 1: μ'' at a frequency of 28 GHz is between 0.1 and 10 Requirement 2: μ'' at a frequency of 47 GHz is between 0.1 and 5 Requirement 3: μ'' at a frequency of 60 GHz is 0.1 to 2

11. The step of forming the composition layer includes applying the photosensitive composition to the openings of the plurality of coil-shaped passive elements and to the substrate on which the plurality of coil-shaped passive elements are arranged, The method for manufacturing a structure according to claim 9, wherein the step of forming the electromagnetic wave absorbing film is to form the electromagnetic wave absorbing film in the openings of the plurality of coil-shaped passive elements arranged on the substrate, and in the regions between the plurality of coil-shaped passive elements on the substrate.

12. Furthermore, the process includes applying the photosensitive composition onto the electromagnetic wave absorbing film on which the plurality of passive elements are formed to form a composition layer, A method for manufacturing the structure according to claim 10, comprising the steps of subjecting the composition layer to exposure treatment and development treatment to further form an electromagnetic wave absorbing film on the electromagnetic wave absorbing film on which the plurality of passive elements are formed.

13. A composition used for forming an electromagnetic wave absorbing film in a structure according to any one of claims 1 to 7, A composition comprising magnetic particles, a resin having an acidic group, a curable compound, and a polymerization initiator.

14. The composition according to claim 13, wherein the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and have an average primary particle diameter of 20 to 1000 nm.

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