Display panel, information processing device, and method for manufacturing display panel

Abstract

Provided is a novel display panel which is excellent in convenience, usability, and reliability. A display panel, according to the present invention, has a first light emitting device, a second light emitting device, a partition wall, a first protective layer, and a second protective layer. The first light emitting device is provided with a first electrode, a second electrode, and a first layer, the first layer is sandwiched between the electrodes, the first layer includes a material having a first hole-transporting property and a substance having a first electron-accepting property, and the first protective layer is in contact with the second electrode. Moreover, the second light emitting device is provided with a third electrode, a fourth electrode, and a second layer, the second layer is sandwiched between the electrodes, the second layer includes a material having a first hole-transporting property and a substance having a first electron-accepting property, and the second layer is provided with a first gap between the first layer and the second layer. The second protective layer is provided with a second gap between the first protective layer and the second protective layer, the second gap overlaps with the first gap, and the second protective layer is in contact with the fourth electrode. Moreover, the partition wall overlaps with the first gap and the second gap.

Description

Display panel, information processing device, and method for manufacturing display panel

[0001] One embodiment of the present invention relates to a display panel, a method for manufacturing a display panel, an information processing device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.

[0003] A method for manufacturing an organic EL display that can form an emissive layer without using a fine metal mask is known, including the steps of depositing a first luminescent organic material containing a mixture of a host material and a dopant material above an electrode array including first and second pixel electrodes formed above an insulating substrate to form a first luminescent layer as a continuous film extending across a display area including the electrode array, irradiating a portion of the first luminescent layer located above the second pixel electrodes with ultraviolet light without irradiating a portion of the first luminescent layer located above the first pixel electrodes with ultraviolet light, depositing a second luminescent organic material containing a mixture of a host material and a dopant material different from the first luminescent organic material on the first luminescent layer to form a second luminescent layer as a continuous film extending across the display area, and forming a counter electrode above the second luminescent layer (see Patent Document 1).

[0004] JP 2012-160473 A

[0005] An object of one embodiment of the present invention is to provide a novel display panel with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display panel with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel data processing device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display panel, a novel display panel manufacturing method, a novel data processing device, or a novel semiconductor device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0007] (1) One embodiment of the present invention is a display panel including a first light-emitting device, a second light-emitting device, a partition wall, a first protective layer, and a second protective layer.

[0008] The first light emitting device comprises a first electrode, a second electrode and a first layer, the first layer comprising an area sandwiched between the second electrode and the first electrode.

[0009] The first layer includes a material having a first hole transporting property and a material having a first electron accepting property, and the first layer has a concentration of 1×10 ２ Ω・cm or more 1×10 ８ It has an electrical resistivity of Ω·cm or less.

[0010] The first protective layer contacts the second electrode, and the second electrode is sandwiched between the first protective layer and the first electrode.

[0011] The second light emitting device comprises a third electrode, a fourth electrode and a second layer, the second layer comprising a region sandwiched between the fourth electrode and the third electrode.

[0012] The second layer includes a material having a first hole transporting property and a substance having a first electron accepting property, and the second layer has a first gap between it and the first layer.

[0013] The second protective layer has a second gap between it and the first protective layer, the second gap overlapping the first gap, and the second protective layer is in contact with the fourth electrode, the fourth electrode being sandwiched between the second protective layer and the third electrode.

[0014] The partition wall has a first opening and a second opening, the first opening overlapping the first electrode, the second opening overlapping the third electrode, and the partition wall overlapping the first gap and the second gap between the first opening and the second opening.

[0015] (2) Another embodiment of the present invention is a display panel including a first light-emitting device, a second light-emitting device, a partition wall, a first protective layer, and a second protective layer.

[0016] The first light-emitting device includes a first electrode, a second electrode, a first unit, and a first layer.

[0017] The second electrode overlaps the first electrode, the first unit comprises an area sandwiched between the second electrode and the first electrode, and the first layer comprises an area sandwiched between the first unit and the first electrode.

[0018] The first layer includes a material having a first hole transporting property and a material having a first electron accepting property, and the first layer has a density of 1×10 ２ Ω・cm or more 1×10 ８ It has an electrical resistivity of Ω·cm or less.

[0019] The first protective layer contacts the second electrode, and the second electrode is sandwiched between the first protective layer and the first electrode.

[0020] The second light-emitting device includes a third electrode, a fourth electrode, a second unit, and a second layer.

[0021] The fourth electrode overlaps the third electrode, and the second unit comprises an area sandwiched between the fourth electrode and the third electrode.

[0022] The second layer comprises a region sandwiched between the second unit and the third electrode, the second layer includes a material having a first hole transporting property and a substance having a first electron accepting property, and the second layer comprises a first gap between itself and the first layer.

[0023] The second protective layer has a second gap between it and the first protective layer, the second gap overlapping the first gap, the second protective layer contacts the fourth electrode, and the fourth electrode is sandwiched between the second protective layer and the third electrode.

[0024] The partition has a first opening and a second opening, the first opening overlapping the first electrode, the second opening overlapping the third electrode, and the partition overlapping the first gap and the second gap between the first opening and the second opening.

[0025] In this way, the first protective layer can protect the first light-emitting device from damage caused by, for example, physical or chemical stresses during the manufacturing process. The second protective layer can protect the second light-emitting device. The first and second protective layers can be used as a hard mask to remove a layer on the partition wall that overlaps the second gap. The second gap can be used to form the first gap.

[0026] Furthermore, electrical conduction between the first layer and the second layer can be suppressed. Furthermore, the phenomenon of current flowing between the first electrode and the fourth electrode via the first layer and the second layer can be suppressed. Furthermore, the phenomenon of current flowing between the third electrode and the second electrode via the first layer and the second layer can be suppressed. Furthermore, the crosstalk phenomenon occurring between the first light-emitting device and the second light-emitting device can be suppressed. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0027] (3) Another embodiment of the present invention is the display panel described above, in which the first light-emitting device includes a third unit and a first intermediate layer, and the second light-emitting device includes a fourth unit and a second intermediate layer.

[0028] The third unit comprises an area sandwiched between the second electrode and the first unit.

[0029] The first intermediate layer has a region sandwiched between the third unit and the first unit, and the first intermediate layer includes a second material having hole transport properties and a second material having electron acceptability, and the first intermediate layer has a 1×10 ２Ω・cm or more 1×10 ８ It has an electrical resistivity of Ω·cm or less.

[0030] The fourth unit comprises a region sandwiched between the fourth electrode and the second unit.

[0031] The second intermediate layer has a region sandwiched between the fourth unit and the second unit, the second intermediate layer includes a material having a second hole transport property and a substance having the second electron accept property, and the second intermediate layer has a third gap between itself and the first intermediate layer.

[0032] The partition overlaps the third gap between the first opening and the second opening.

[0033] This makes it possible to suppress the phenomenon of current flowing between the first electrode and the fourth electrode via the first layer and the second layer or the first intermediate layer and the second intermediate layer. It also makes it possible to suppress the phenomenon of current flowing between the third electrode and the second electrode via the first layer and the second layer. It also makes it possible to suppress the crosstalk phenomenon occurring between the first light-emitting device and the second light-emitting device. As a result, it is possible to provide a novel display panel that is highly convenient, useful, and reliable.

[0034] (4) Another embodiment of the present invention is the display panel described above, in which the first material having a hole-transporting property is an aromatic amine compound or an organic compound having a π-electron-rich heteroaromatic ring, and the first substance having an electron-accepting property is an organic compound including fluorine or a cyano group or a transition metal oxide.

[0035] This allows holes to be supplied from the positive electrode side to the negative electrode side. Furthermore, since the second layer of the second light-emitting device is separated from the first layer of the first light-emitting device, crosstalk can be suppressed. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0036] (5) Another embodiment of the present invention is the display panel, wherein the first protective layer and the second protective layer contain aluminum oxide.

[0037] (6) Another embodiment of the present invention is the above-described display panel including a first insulating film.

[0038] The first insulating film is in contact with the first protective layer, and the first protective layer has a region sandwiched between the first insulating film and the second electrode.

[0039] The first insulating film is in contact with the second protective layer, and the second protective layer has a region sandwiched between the first insulating film and the fourth electrode.

[0040] The first layer comprises a first sidewall and the second layer comprises a second sidewall.

[0041] The second sidewall faces the first sidewall, with a first gap sandwiched between the second sidewall and the first sidewall, and the first sidewall and the second sidewall are in contact with the first insulating film.

[0042] (7) Another embodiment of the present invention is the display panel described above, further including a second insulating film, which fills the first gap.

[0043] This can suppress the phenomenon of impurities diffusing into the first light-emitting device and the second light-emitting device, and can improve the reliability of the first light-emitting device and the second light-emitting device, thereby providing a novel display panel that is highly convenient, useful, and reliable.

[0044] (8) Another aspect of the present invention is an information processing device including one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye gaze input device, and a posture detection device, and the above-mentioned display panel.

[0045] This allows the arithmetic unit to generate image information or control information based on information supplied using various input devices, thereby providing a novel information processing device that is highly convenient and reliable.

[0046] (9) Another aspect of the present invention is a method for manufacturing a display panel, the method comprising the following 12 steps:

[0047] In a first step, a first electrode and a second electrode are formed.

[0048] In the second step, a partition is formed between the first electrode and the second electrode.

[0049] In a third step, a first layer is formed on the first electrode and the second electrode.

[0050] In the fourth step, a first unit is formed on the first layer.

[0051] In a fifth step, a second layer containing a first organic compound and a first metal is formed on the first unit by co-evaporation.

[0052] In the sixth step, an intermediate layer is formed on the second layer.

[0053] In the seventh step, a second unit is formed on the intermediate layer.

[0054] In an eighth step, a third layer containing a second organic compound and a second metal is formed on the second unit by co-evaporation.

[0055] In a ninth step, a third electrode is formed on the third layer.

[0056] In a tenth step, a first protective layer is formed on the third electrode.

[0057] In the eleventh step, the first protective layer on the partition wall is removed by photoetching, and the second protective layer and the third protective layer are processed into a predetermined shape.

[0058] In a twelfth step, the first layer, the first unit, the second layer, the intermediate layer, the second unit, the third layer, and the third electrode on the partition are removed using the second protective layer and the third protective layer as a hard mask to form a first light-emitting device and a second light-emitting device.

[0059] This allows the second protective layer and the third protective layer to have resistance to the step of removing the structure on the partition wall. Furthermore, processing conditions that would remove a resist made of an organic material, such as a photopolymer, can be applied to the step of removing the structure on the partition wall. Furthermore, the protective layer can be used to protect the light-emitting device when removing a resist made of an organic material, such as a photopolymer. As a result, a novel method for manufacturing a display panel that is highly convenient, useful, and reliable can be provided.

[0060] In the drawings accompanying this specification, components are classified by function and shown as independent blocks in block diagrams, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0061] In this specification, the names of the source and drain of a transistor are interchangeable depending on the polarity of the transistor and the level of the potential applied to each terminal. Generally, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for convenience, the connection relationship of a transistor may be described assuming that the source and drain are fixed, but in reality, the names of the source and drain are interchangeable depending on the above-mentioned potential relationship.

[0062] In this specification, the source of a transistor refers to a source region that is part of a semiconductor film that functions as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor refers to a drain region that is part of the semiconductor film, or a drain electrode connected to the semiconductor film. Furthermore, the gate refers to a gate electrode.

[0063] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the source or drain of a first transistor is connected to only one of the source or drain of a second transistor, and a state in which transistors are connected in parallel means a state in which one of the source or drain of a first transistor is connected to one of the source or drain of a second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor.

[0064] In this specification, "connection" means an electrical connection, and corresponds to a state in which a current, voltage, or potential can be supplied or transmitted. Therefore, a connected state does not necessarily refer to a direct connection, but also includes a state in which a current, voltage, or potential can be supplied or transmitted via a circuit element such as a wiring, resistor, diode, or transistor.

[0065] In this specification, even when components that appear independent on a circuit diagram are connected to each other, in reality, one conductive film may have the functions of multiple components, for example, when part of a wiring functions as an electrode. In this specification, the term "connection" also includes such cases where one conductive film has the functions of multiple components.

[0066] In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode.

[0067] According to one embodiment of the present invention, a novel display panel with excellent convenience, usefulness, or reliability can be provided. Alternatively, a method for manufacturing a novel display panel with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel information processing device with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel display panel, a novel method for manufacturing a display panel, a novel information processing device, or a novel semiconductor device can be provided.

[0068] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0069] FIGS. 1A and 1B are diagrams illustrating a configuration of a display panel according to an embodiment. FIG. 2 is a circuit diagram illustrating a pixel of a display panel according to an embodiment. FIGS. 3A to 3D are diagrams illustrating a configuration of a display panel according to an embodiment. FIGS. 4A to 4C are diagrams illustrating a configuration of a display panel according to an embodiment. FIG. 5 is a diagram illustrating a configuration of a display panel according to an embodiment. FIGS. 6A to 6C are diagrams illustrating a configuration of a display panel according to an embodiment. FIG. 7 is a diagram illustrating a portion of FIG. 6A. FIGS. 8A and 8B are diagrams illustrating a configuration of a display panel according to an embodiment. FIGS. 9A and 9B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. FIGS. 10A and 10B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. FIGS. 11A and 11B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. FIGS. 12A and 12B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. FIGS. 13A and 13B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. FIGS. 14A and 14B are diagrams illustrating a method for manufacturing a display panel according to an embodiment. 15A and 15B are diagrams illustrating the configuration of a light-emitting device according to an embodiment. FIGS. 16A and 16B are diagrams illustrating the configuration of a light-emitting device according to an embodiment. FIG. 17 is a diagram illustrating the configuration of a light-emitting device according to an embodiment. FIGS. 18A to 18E are diagrams illustrating the configuration of an information processing device according to an embodiment. FIGS. 19A to 19E are diagrams illustrating the configuration of an information processing device according to an embodiment. FIGS. 20A and 20B are diagrams illustrating the configuration of an information processing device according to an embodiment. FIGS. 21A and 21B are diagrams illustrating the configuration of a display panel according to an example. FIG. 22 is a photograph of a display panel according to an example.

[0070] A display panel according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, a partition wall, a first protective layer, and a second protective layer. The first light-emitting device includes a first electrode, a second electrode, and a first layer. The first layer includes a region sandwiched between the second electrode and the first electrode, and the first layer includes a first material having hole-transporting properties and a first substance having electron-accepting properties. The first layer has a 1×10 ２ Ω・cm or more 1×10 ８ The light-emitting device has an electrical resistivity of Ω cm or less. The first protective layer contacts the second electrode, and the second electrode is sandwiched between the first protective layer and the first electrode. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer, the second layer having a region sandwiched between the fourth electrode and the third electrode, the second layer including a material having a first hole-transporting property and a substance having a first electron-accepting property, and the second layer has a first gap between it and the first layer. The second protective layer also has a second gap between it and the first protective layer, the second gap overlapping the first gap, the second protective layer contacts the fourth electrode, and the fourth electrode is sandwiched between the second protective layer and the third electrode. The partition wall also has a first opening and a second opening, the first opening overlapping the first electrode, the second opening overlapping the third electrode, and the partition wall overlapping the first gap and the second gap between the first opening and the second opening.

[0071] As a result, the first protective layer can protect the first light-emitting device from damage caused by, for example, physical or chemical stresses applied during the manufacturing process. The second protective layer can protect the second light-emitting device. The first and second protective layers can be used as hard masks to remove layers that overlap the second gaps on the partition walls. The second gaps can be used to form the first gaps. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0072] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0073] Embodiment 1 In this embodiment, a structure of a display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0074] 1A and 1B are block diagrams illustrating a structure of a display panel according to one embodiment of the present invention, in which FIG. 1A is a top view illustrating a display panel according to one embodiment of the present invention, and FIG. 1B is a top view illustrating a part of the display panel.

[0075] FIG. 2 is a circuit diagram illustrating a pixel of a display panel according to one embodiment of the present invention.

[0076] 3A is a cross-sectional view illustrating a structure of a display panel of one embodiment of the present invention. FIG. 3A is a diagram illustrating a cross section along the cutting lines X1-X2 and X3-X4 and a pair of pixels 703(i, j) shown in FIG. 1A. FIG. 3B is a cross-sectional view illustrating a transistor that can be used in the display panel of one embodiment of the present invention. FIG. 3C is a cross-sectional view illustrating the direction of light emitted from a display panel of one embodiment of the present invention, which is different from the display panel of one embodiment of the present invention described with reference to FIG. 3C. FIG. 3D is a cross-sectional view illustrating the direction of light emitted from a display panel of one embodiment of the present invention, which is different from the display panel of one embodiment of the present invention described with reference to FIG. 3C.

[0077] 4A and 4B are diagrams illustrating a structure of a display panel according to one embodiment of the present invention. Fig. 4A is a cross-sectional view of a pixel of a display panel according to one embodiment of the present invention, Fig. 4B is a perspective view of the pixel shown in Fig. 4A, and Fig. 4C is a top view of the pixel shown in Fig. 4A. Note that insulating films are omitted in Fig. 4B and Fig. 4C to avoid complication of the drawings.

[0078] 5A and 5B are diagrams illustrating a structure of a display panel according to one embodiment of the present invention, and are cross-sectional views illustrating a part of the display panel illustrated in FIG.

[0079] 6A and 6B are diagrams illustrating a structure of a display panel according to one embodiment of the present invention. Fig. 6A is a cross-sectional view of a pixel of a display panel according to one embodiment of the present invention, Fig. 6B is a perspective view of the pixel shown in Fig. 6A, and Fig. 6C is a top view of the pixel shown in Fig. 6A. Note that insulating films are omitted in Fig. 6B and Fig. 6C to avoid complication of the drawings.

[0080] FIG. 7 is a cross-sectional view of a pixel of a display panel according to one embodiment of the present invention, and illustrates a part of the pixel shown in FIG. 6A.

[0081] 8A and 8B are cross-sectional views illustrating a display panel of one embodiment of the present invention, which is different from the display panels of one embodiment of the present invention described with reference to FIGS. 4 to 7. FIG. 8A is a cross-sectional view of a pixel of the display panel of one embodiment of the present invention, and FIG. 8B is a diagram illustrating a part of FIG. 8A.

[0082] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0083] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be made into a light-emitting device that displays full color by combining it with a colored layer (for example, a color filter).

[0084] Furthermore, light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0085] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer such as a charge-generating layer between the light-emitting units.

[0086] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0087] In this specification, variables that take on integer values ​​of 1 or greater may be used as symbols. For example, (p) including a variable p that takes on an integer value of 1 or greater may be used as part of a symbol specifying any one of up to p components. Also, for example, (m, n) including variables m and n that take on integer values ​​of 1 or greater may be used as part of a symbol specifying any one of up to m×n components.

[0088] <Configuration Example 1 of Display Panel 700> The display panel 700 includes a display area 231, which includes a set of pixels 703(i, j) (see FIG. 1A ). The display area 231 also includes a set of pixels 703(i+1, j) adjacent to the set of pixels 703(i, j) (see FIG. 1B ).

[0089] <Configuration Example 1 of Display Area 231> For example, the display area 231 has a set of 500 or more pixels per inch. Also, the display area 231 has a set of 1,000 or more pixels per inch, preferably 5,000 or more pixels, and more preferably 10,000 or more pixels per inch. This can reduce the screen door effect when used in a goggle-type display device, for example.

[0090] <<Configuration Example 2 of Display Area 231>> For example, the display area 231 has a plurality of pixels arranged in a matrix. For example, the display area 231 has 7,600 or more pixels in the row direction and 4,300 or more pixels in the column direction. Specifically, the display area 231 has 7,680 pixels in the row direction and 4,320 pixels in the column direction.

[0091] This makes it possible to display a high-definition image, thereby providing a novel display panel that is highly convenient and reliable.

[0092] <<Configuration Example 3 of Display Area 231>> For example, when used in a television system, the diagonal length of the display area 231 is 32 inches or more, preferably 55 inches or more, and more preferably 80 inches or more. Furthermore, it is preferable that the diagonal length of the display area 231 is, for example, 200 inches or less, because this allows for a lighter weight.

[0093] This makes it possible to display a realistic image, thereby providing a novel display panel that is highly convenient and reliable.

[0094] <<Configuration Example 1 of Pixel 703(i,j)>> A plurality of pixels can be used for pixel 703(i,j) (see FIG. 1B ). For example, a plurality of pixels that display colors with different hues can be used. Each of the plurality of pixels can be referred to as a sub-pixel. Alternatively, a set of a plurality of sub-pixels can be referred to as a pixel.

[0095] This allows the colors displayed by the plurality of pixels to be mixed by additive or subtractive color mixing, or allows colors of hues that cannot be displayed by individual pixels to be displayed.

[0096] Specifically, pixel 702B(i,j) displaying blue, pixel 702G(i,j) displaying green, and pixel 702R(i,j) displaying red can be used as pixel 703(i,j). Furthermore, pixel 702B(i,j), pixel 702G(i,j), and pixel 702R(i,j) can each be referred to as a sub-pixel.

[0097] Furthermore, for example, a pixel that displays white or the like can be added to the above set and used as pixel 703(i,j). Also, a pixel that displays cyan, a pixel that displays magenta, and a pixel that displays yellow can be used as pixel 703(i,j).

[0098] Furthermore, for example, a pixel that emits infrared light can be added to the above set and used as pixel 703(i,j). Specifically, a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less can be used as pixel 703(i,j).

[0099] <Configuration Example 2 of Display Panel 700> The display panel described in this embodiment includes a driver circuit GD and a driver circuit SD (see FIGS. 1A and 3A). The display panel also includes a terminal 519B. The terminal 519B can be electrically connected to, for example, a flexible printed circuit FPC1.

[0100] <<Configuration Example of the Driver Circuit GD>> The driver circuit GD has a function of supplying a first selection signal and a second selection signal. For example, the driver circuit GD is electrically connected to the conductive film G1(i) and supplies the first selection signal, and is electrically connected to the conductive film G2(i) and supplies the second selection signal.

[0101] <<Configuration Example of Driver Circuit SD>> The driver circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. For example, the driver circuit SD is electrically connected to the conductive film S1g(j) and supplies the image signal, and is electrically connected to the conductive film S2g(j) and supplies the control signal.

[0102] <Configuration Example 3 of Display Panel 700> The display panel 700 includes a pair of pixels 703(i, j) and a functional layer 520 (see FIG. 3A).

[0103] The set of pixels 703(i,j) includes pixel 702B(i,j), pixel 702G(i,j) and partition 528 (see FIG. 1B).

[0104] Pixel 702B(i,j) includes a light emitting device 550B(i,j) and a pixel circuit 530B(i,j).

[0105] Note that pixel 702G(i,j) includes light-emitting device 550G(i,j) (see FIG. 3A).

[0106] The display panel 700 includes a substrate 510, a substrate 770, and a functional layer 520 (see FIG. 3A ). The functional layer 520 is sandwiched between the substrate 770 and the substrate 510. The display panel 700 also includes an insulating film 705, which functions to bond the substrate 770 and the functional layer 520 together.

[0107] <<Base 510, Base 770>> The base 510 or the base 770 can be made of a light-transmitting material.

[0108] For example, a flexible material can be used for the substrate 510 or the substrate 770. This makes it possible to provide a flexible functional panel.

[0109] For example, a material having a thickness of 0.7 mm or less and 0.1 mm or more can be used. Specifically, a material polished to a thickness of about 0.1 mm can be used. This allows for weight reduction.

[0110] Meanwhile, glass substrates of 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 2800 mm), 10th generation (2950 mm × 3400 mm), etc. can be used for the base material 510 or the base material 770. This allows a large display device to be manufactured.

[0111] An organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the base material 510 or the base material 770 .

[0112] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically strengthened glass, quartz, sapphire, or the like can be used for the substrate 510 or the substrate 770. Alternatively, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 510 or the substrate 770 that is disposed on the side of the functional panel closer to the user. This can prevent breakage or scratches on the functional panel during use.

[0113] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like can be used. Stainless steel, aluminum, or the like can be used for the base material 510 or the base material 770.

[0114] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the base material 510 or the base material 770. This allows a semiconductor element to be formed on the base material 510 or the base material 770.

[0115] For example, organic materials such as resins, resin films, or plastics can be used for the substrate 510 or the substrate 770. Specifically, materials containing polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or a resin having a siloxane bond such as silicone can be used for the substrate 510 or the substrate 770. For example, resin films, resin plates, laminated materials, etc. containing these materials can be used. This can reduce weight. Or, for example, it can reduce the frequency of breakage due to dropping.

[0116] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), cycloolefin polymer (COP), cycloolefin copolymer (COC), or the like can be used for the substrate 510 or the substrate 770 .

[0117] For example, a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material or the like is bonded to a resin film or the like can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate resin, organic material, or the like is dispersed in an inorganic material can be used for the substrate 510 or the substrate 770.

[0118] Furthermore, a single-layer material or a material having multiple layers stacked thereon can be used for the substrate 510 or the substrate 770. For example, a material having an insulating film or the like stacked thereon can be used. Specifically, a material having one or more films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like stacked thereon can be used. This can prevent, for example, the diffusion of impurities contained in the substrate. Alternatively, it can prevent the diffusion of impurities contained in glass or resin. Alternatively, it can prevent the diffusion of impurities that permeate the resin.

[0119] Furthermore, paper or wood can be used for the substrate 510 or the substrate 770 .

[0120] For example, a material having heat resistance sufficient to withstand heat treatment during the manufacturing process can be used for the base material 510 or the base material 770. Specifically, a material having heat resistance to heat applied during a manufacturing process in which a transistor, a capacitor, or the like is directly formed can be used for the base material 510 or the base material 770.

[0121] For example, a method can be used in which an insulating film, a transistor, a capacitor, or the like is formed on a process substrate that has heat resistance to heat applied during the manufacturing process, and the formed insulating film, transistor, capacitor, or the like is transferred to, for example, the base material 510 or the base material 770. In this way, for example, an insulating film, a transistor, a capacitor, or the like can be formed on a flexible substrate.

[0122] The functional layer 520 includes pixel circuits 530B(i,j) and 530G(i,j), and a driving circuit GD. The pixel circuits 530B(i,j) are electrically connected to the light-emitting devices 550B(i,j) through openings 591B, and the pixel circuits 530G(i,j) are electrically connected to the light-emitting devices 550G(i,j) through openings 591G.

[0123] The display panel displays information through the base material 770 (see FIG. 3C ). In other words, the light-emitting device 550B(i, j) emits light in a direction where the functional layer 520 is not disposed. The light-emitting device 550B(i, j) can also be called a top-emission light-emitting device.

[0124] Note that a substrate provided with touch sensors arranged in a matrix can be used as the substrate 770. For example, a capacitive touch sensor or an optical touch sensor can be used as the substrate 770. In this way, the display panel of one embodiment of the present invention can be used as a touch panel.

[0125] <Configuration Example 4 of Display Panel 700> The display panel 700 includes a substrate 510, a substrate 770, and a functional layer 520 (see FIG. 3D ). Note that the display panel described using FIG. 3D differs from the display panel described using FIG. 3C in that display is performed through the substrate 510. In other words, the light-emitting device 550B(i, j) emits light toward the functional layer 520. The light-emitting device 550B(i, j) can also be referred to as a bottom-emission light-emitting device.

[0126] <Configuration Example 5 of Display Panel 700> The display panel 700 has a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, and a conductive film VCOM2 (see FIG. 2).

[0127] The functional layer 520 includes a pixel circuit 530G(i,j) and a light-transmitting region 520T. The pixel circuit 530B(i,j) is electrically connected to the light-emitting device 550B(i,j), and the light-transmitting region 520T transmits light emitted from the light-emitting device 550B(i,j).

[0128] For example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal.

[0129] Configuration Example 2 of Pixel 703(i,j) A set of pixels 703(i,j) includes a pixel 702G(i,j) (see FIG. 1B ). The pixel 702G(i,j) includes a pixel circuit 530G(i,j) and a light-emitting device 550G(i,j) (see FIG. 3 ).

[0130] <<Configuration Example 1 of Pixel Circuit 530G(i,j)>> The pixel circuit 530G(i,j) is supplied with a first selection signal, and the pixel circuit 530G(i,j) acquires an image signal based on the first selection signal. For example, the first selection signal can be supplied using a conductive film G1(i) (see FIG. 2). Alternatively, the image signal can be supplied using a conductive film S1g(j). Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i,j) to acquire the image signal can be referred to as "writing."

[0131] <<Configuration Example 2 of Pixel Circuit 530G(i,j)>> The pixel circuit 530G(i,j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21, and a node N21 (see FIG. 2). The pixel circuit 530G(i,j) also includes a node N22, a capacitor C22, and a switch SW23.

[0132] The transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light-emitting device 550G(i, j), and a second electrode electrically connected to the conductive film ANO.

[0133] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G1(i).

[0134] The switch SW22 has a first terminal electrically connected to the conductive film S2g(j) and has a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G2(i).

[0135] The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW22.

[0136] This allows an image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of light emitted by light-emitting device 550G(i, j) can be controlled using the potential of node N21.

[0137] <<Configuration Example of Transistor>> A bottom-gate transistor, a top-gate transistor, or the like can be used for the functional layer 520. Specifically, the transistor can be used as a switch.

[0138] The transistor M21 includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 3B). The transistor M21 is formed over, for example, the insulating film 501C.

[0139] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0140] The conductive film 504 has a region overlapping with the region 508C, and the conductive film 504 functions as a gate electrode.

[0141] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0142] The conductive film 512A has a function as either a source electrode or a drain electrode, and the conductive film 512B has the other function as either a source electrode or a drain electrode.

[0143] The conductive film 524 can be used for the transistor M21. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 504 and the conductive film 524. The conductive film 524 functions as a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film. The insulating film 518 covers the transistor M21. The insulating film 516 includes an insulating film 516A and an insulating film 516B.

[0144] Note that a semiconductor film to be used for a transistor in a pixel circuit can be formed in the same process as a semiconductor film to be used for a transistor in a driver circuit. For example, a semiconductor film having the same composition as that of a semiconductor film to be used for a transistor in a pixel circuit can be used for the driver circuit.

[0145] <<Structure Example 1 of Semiconductor Film 508>> For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0146] [Hydrogenated Amorphous Silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a display panel with less display unevenness than a display panel using polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the display panel.

[0147] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. This allows the field-effect mobility of the transistor to be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, the driving capability can be improved compared to that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, the aperture ratio of a pixel can be improved compared to that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0148] Alternatively, the reliability of the transistor can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.

[0149] Alternatively, the temperature required to manufacture the transistor can be lower than that of a transistor using single crystal silicon, for example.

[0150] Alternatively, a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit. Alternatively, the driver circuit can be formed over the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting an electronic device can be reduced.

[0151] [Single Crystal Silicon] For example, single crystal silicon can be used for the semiconductor film 508. This allows for higher definition than, for example, a display panel using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, a display panel with less display unevenness than, for example, a display panel using polysilicon for the semiconductor film 508 can be provided. Alternatively, for example, smart glasses or a head-mounted display can be provided.

[0152] <<Configuration Example 2 of Semiconductor Film 508>> For example, metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to retain an image signal for a longer period of time compared to a pixel circuit that uses a transistor in which amorphous silicon is used for the semiconductor film. Specifically, a selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing device can be reduced. Furthermore, power consumption associated with driving can be reduced.

[0153] For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, zinc, and tin can be used for the semiconductor film.

[0154] For example, a transistor having a smaller leakage current in an off state than a transistor using amorphous silicon for its semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for its semiconductor film can be used as a switch, etc. This allows the potential of a floating node to be held for a longer time than a circuit using a transistor using amorphous silicon for its switch.

[0155] <<Configuration Example 1 of Light-Emitting Device 550G(i,j)>> The light-emitting device 550G(i,j) is electrically connected to the pixel circuit 530G(i,j) (see FIG. 2). The light-emitting device 550G(i,j) also includes an electrode 551G(i,j) electrically connected to the pixel circuit 530G(i,j) and an electrode 552 electrically connected to the conductive film VCOM2. The light-emitting device 550G(i,j) has a function of operating based on the potential of the node N21.

[0156] For example, an organic electroluminescent element, an inorganic electroluminescent element, a light-emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the light-emitting device 550G(i, j).

[0157] <Configuration Example 6 of Display Panel 700> The display panel 700 described in this embodiment includes a light-emitting device 550B(i,j), a light-emitting device 550G(i,j), a partition 528, a protective layer 554B(j), and a protective layer 554G(j) (see FIG. 4A ). The display panel 700 also includes a light-emitting device 550R(i,j) and a protective layer 554R(j).

[0158] <Configuration Example 1 of Light-Emitting Device 550B(i,j)> Light-emitting device 550B(i,j) includes electrode 551B(i,j), electrode 552B(j), unit 103B(j), and layer 104B(j) (see FIG. 4A ). Light-emitting device 550B(i,j) also includes layer 105B(j). Layer 105B(j) can be used, for example, as an electron injection layer.

[0159] Electrode 552B(j) overlaps with electrode 551B(i,j), and unit 103B(j) has a region sandwiched between electrode 552B(j) and electrode 551B(i,j). Unit 103B(j) includes a light-emitting layer and has the function of emitting light.

[0160] For example, a layer selected from a hole transport layer, an electron transport layer, a carrier block layer, etc. can be used in unit 103B(j).

[0161] The layer 104B(j) includes a region sandwiched between the unit 103B(j) and the electrode 551B(i,j), and includes a material having a hole-transporting property and a substance having an electron-accepting property. ２ Ω・cm or more 1×10 ８ The layer 104B(j) has an electrical resistivity of Ω·cm or less. The layer 104B(j) can be used, for example, as a hole injection layer.

[0162] <<Configuration Example 1 of Protective Layer 554B(j)>> The protective layer 554B(j) is in contact with the electrode 552B(j), and the electrode 552B(j) is sandwiched between the protective layer 554B(j) and the electrode 551B(i,j). Note that the protective layer 554B(j) has a function of protecting the light-emitting device 550B(i,j) from physical or chemical loads applied to the light-emitting device 550B(i,j), for example, during the manufacturing process of the display panel.

[0163] <Configuration Example 2 of Light-Emitting Device 550G(i,j)> The light-emitting device 550G(i,j) includes a light-emitting element 551G(i,j), an electrode 552G(j), a unit 103G(j), and a layer 104G(j). The light-emitting device 550G(i,j) also includes a layer 105G(j). Note that the layer 105G(j) can be used, for example, as an electron injection layer.

[0164] The electrode 552G(j) overlaps with the electrode 551G(i,j), and the unit 103G(j) has a region sandwiched between the electrode 552G(j) and the electrode 551G(i,j). The unit 103G(j) includes a light-emitting layer and has a function of emitting light.

[0165] For example, a layer selected from a hole transport layer, an electron transport layer, a carrier block layer, etc. can be used in the unit 103G(j).

[0166] The layer 104G(j) includes a region sandwiched between the unit 103G(j) and the electrode 551B(i,j), and contains the same material having hole-transporting properties and substance having electron-accepting properties as the layer 104B(j). Note that the layer 104G can be used, for example, as a hole-injection layer.

[0167] Layer 104G(j) has gap 104S(j) between it and layer 104B(j). Note that since layers 104B(j) and 104G(j) are conductive, gap 104S(j) has the function of preventing electrical conduction between layer 104B(j) and layer 104G(j).

[0168] Note that layer 104G(j) may have a region that is continuous with layer 104B(j). In other words, layer 104G(j) may be electrically isolated from layer 104B(j) by gap 104S(j).

[0169] When layer 104G(j) has a region continuous with layer 104B(j), layer 104B(j) is a region overlapping with electrode 551B(i,j) of the layer in which gap 104S(j) is provided, and layer 104G(j) is a region overlapping with electrode 551G(i,j) of that layer. Furthermore, layer 104G(j) has gap 104S(j) between it and layer 104B(j), and a line drawn from electrode 551G(i,j) to electrode 551B(i,j) in a top view crosses gap 104S(j) with a probability equal to or greater than the probability of crossing the continuous region.

[0170] <<Structure Example 1 of Layer 104B(j) and Layer 104G(j)>> A material having a hole-transporting property and a substance having an electron-accepting property can be used for the layer 104B(j) and the layer 104G(j).

[0171] [Material Having Hole Transporting Properties] For example, an aromatic amine compound or an organic compound having a π-electron-rich heteroaromatic ring can be used as the material having hole transporting properties.

[0172] This allows holes to be supplied from the positive electrode side to the negative electrode side. Furthermore, since the layer 104G(j) of the light-emitting device 550G(i,j) is separated from the layer 104B(j) of the light-emitting device 550B(i,j), crosstalk can be suppressed. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0173] Compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, polymeric compounds (oligomers, dendrimers, polymers, etc.) can be used as materials having hole transport properties for the composite material. −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0174] Examples of compounds having an aromatic amine skeleton that can be used include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0175] Examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole, and carbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, and the like can be used.

[0176] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10 10,10'-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentacene, coronene, and the like can be used.

[0177] Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), and the like.

[0178] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD).

[0179] For example, a substance having a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton can be suitably used as a material having hole transport properties for the composite material. Furthermore, a substance having an aromatic amine with a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine with a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used as a material having hole transport properties for the composite material. The use of a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of the light-emitting device.

[0180] Examples of these materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2 -d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl -4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-0 3), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4' 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tris(1, 1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis([1,1'-biphenyl-4-yl]amine N,N-bis([1,1′-biphenyl]-4-yl)-9,9′-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis([1,1′-biphenyl]-4-yl)-9,9′-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1′-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi(9H-fluorene)-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis(9 N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and the like can be used.

[0181] [Electron-Accepting Substance] For example, an organic compound containing fluorine or a cyano group or a transition metal oxide can be used as the electron-accepting substance. The electron-accepting substance can extract electrons from an adjacent hole-transporting layer or a material having hole-transporting properties by applying an electric field. Note that the electron-accepting organic compound can be easily vapor-deposited and easily formed into a film. This can improve the productivity of light-emitting devices.

[0182] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ４ -TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used.

[0183] In particular, a compound in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, is thermally stable and is therefore preferred.

[0184] [3] Radialene derivatives having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group) are also preferred because they have very high electron-accepting properties.

[0185] Specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], and the like can be used.

[0186] Furthermore, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the substance having electron accepting properties.

[0187] In addition, phthalocyanine (abbreviation: H ２ and compounds having an aromatic amine skeleton such as 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N′-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (abbreviation: DNTPD).

[0188] Furthermore, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used.

[0189] <<Configuration Example of Layer 105B(j)>> The layer 105B(j) has a region sandwiched between the electrode 552B(j) and the electrode 551B(i,j). For example, the layer 105B(j) is sandwiched between the electrode 552B(j) and the unit 103B(j), and the layer 105B(j) is in contact with the electrode 552B(j). Note that the layer 105B(j) can be used, for example, as an electron injection layer.

[0190] The layer 105B(j) includes a first organic compound and a first metal. The first organic compound forms a single occupied molecular orbital (SOMO) with the first metal. For example, the energy level of the SOMO is in the range of −1.5 eV to 0 eV relative to the energy level of the HOMO of the first organic compound.

[0191] For example, a composite material including a first organic compound having an unshared electron pair and a first metal can be used for the layer 105B(j). Preferably, the sum of the number of electrons in the first organic compound and the number of electrons in the first metal is an odd number. The molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0192] This allows the first organic compound having an unshared electron pair to interact with the first metal to form a half-occupied molecular orbital (SOMO). This also reduces the barrier between the electrode 102 and the layer 105 when electrons are injected from the electrode 102 to the layer 105. Furthermore, the first metal has low reactivity with water or oxygen, which improves the moisture resistance of the light-emitting device 150.

[0193] The spin density of the layer 105B(j) measured by electron spin resonance (ESR) is preferably 1×10 １６ spins / cm ３ or more, more preferably 5 × 10 １６ spins / cm ３ More preferably, 1×10 １７ spins / cm ３ The above composite material can be used for the layer 105 .

[0194] The concentration of the alkali metal contained in layer 105B(j) is preferably lower than the concentration of the first metal contained in layer 105B(j). For example, lithium, sodium, potassium, rubidium, cesium, etc. are alkali metals. The concentrations of the alkali metal and the first metal contained in layer 105B(j) can be detected by secondary ion mass spectrometry or the like.

[0195] [First Organic Compound] For example, a material having electron transport properties can be used as an organic compound having an unshared electron pair. For example, a compound having an electron-deficient heteroaromatic ring can be used. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. This can reduce the driving voltage of the light-emitting device 150.

[0196] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the HOMO level and LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0197] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair.

[0198]

[0199] Furthermore, for example, copper phthalocyanine, which has an odd number of electrons, can be used as the organic compound having an unshared electron pair.

[0200] [First Metal] For example, when the number of electrons in the first organic compound having an unshared electron pair is even, a composite material of the first organic compound and a metal belonging to an odd group in the periodic table can be used for the layer 105.

[0201] For example, manganese (Mn), a Group 7 metal, cobalt (Co), a Group 9 metal, copper (Cu), silver (Ag), and gold (Au), which are Group 11 metals, and aluminum (Al) and indium (In), which are Group 13 metals, belong to odd-numbered groups in the periodic table. The elements of Group 11 have lower melting points than the elements of Groups 7 and 9, making them suitable for vacuum deposition. Ag is particularly preferred due to its low melting point.

[0202] By using Ag for the electrode 102 and the layer 105, the adhesion between the layer 105 and the electrode 102 can be improved.

[0203] When the organic compound having an unshared electron pair has an odd number of electrons, a composite material of a first metal belonging to an even group in the periodic table and the first organic compound can be used for the layer 105. For example, iron (Fe), which is a metal belonging to the 8th group in the periodic table, belongs to an even group in the periodic table.

[0204] <<Configuration Example of Layer 105G(j)>> The layer 105G(j) has a region sandwiched between the electrode 552G(j) and the electrode 551G(i,j). For example, the layer 105G(j) is sandwiched between the electrode 552G(j) and the unit 103G(j), and the layer 105G(j) is in contact with the electrode 552G(j). Note that the layer 105G(j) can be used, for example, as an electron injection layer.

[0205] Layer 105G(j) includes a first organic compound and a first metal, and layer 105G(j) has gap 105S(j) between it and layer 105B(j).

[0206] This allows, for example, the driving voltage of the display panel to be suppressed without using alkali metals in the light-emitting devices. Furthermore, adjacent light-emitting devices can be separated by etching. Even when etching is used, the manufacturing equipment is not contaminated with alkali metals. As a result, a novel display panel with excellent convenience, usefulness, and reliability can be provided.

[0207] Configuration Example 1 of Protective Layer 554G(j) The protective layer 554G(j) has a gap 554S(j) between it and the protective layer 554B(j), and the gap 554S(j) overlaps with the gap 104S(j).

[0208] The protective layer 554G(j) is in contact with the electrode 552G(j), and the electrode 552G(j) is sandwiched between the protective layer 554G(j) and the electrode 551B(i,j). The protective layer 554G(j) has a function of protecting the light-emitting device 550G(i,j) from physical or chemical stresses applied to the light-emitting device 550G(i,j), for example, during the manufacturing process of the display panel.

[0209] <<Configuration Example 1 of Protective Layer 554B(j) and Protective Layer 554G(j)>> Inorganic materials can be used for the protective layer 554B(j) and the protective layer 554G(j). Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminated material formed by laminating a plurality of films selected from these, can be used for the protective layer 554B(j) and the protective layer 554G(j).

[0210] For example, an aluminum oxide film, a film containing silicon oxide, or a film containing silicon nitride can be used for the protective layer 554B(j) and the protective layer 554G(j).

[0211] Furthermore, a film formed by atomic layer deposition (ALD) or the like is preferable, since the ALD method allows a dense film to be formed under mild conditions.

[0212] In particular, a film containing aluminum oxide formed by ALD can be suitably used for the protective layer 554B(j) and the protective layer 554G(j), which can suppress the diffusion of impurities such as water.

[0213] <<Configuration Example 1 of Partition Wall 528>> The partition wall 528 has an opening 528B(i,j) and an opening 528G(i,j) (see FIG. 4C ). The opening 528B(i,j) overlaps with the electrode 551B(i,j), and the opening 528G(i,j) overlaps with the electrode 551G(i,j).

[0214] The partition wall 528 overlaps the gap 104S(j) and the gap 554S(j) between the openings 528B(i,j) and 528G(i,j) (see FIG. 4A).

[0215] An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the partition wall 528. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminate material formed by stacking a plurality of films selected from these can be used for the partition wall 528. For example, a silicon oxide film, a film containing an acrylic resin, a film containing polyimide, or the like can be used for the partition wall 528.

[0216] As a result, the protective layer 554B(j) can protect the light-emitting device 550B(i,j) from damage due to, for example, physical or chemical stresses applied during the manufacturing process. The protective layer 554G(j) can also protect the light-emitting device 550G(i,j). The protective layer 554B(j) and the protective layer 554G(j) can be used as a hard mask to remove a layer on the partition wall 528 that overlaps the gap 554S(j). The gap 554S(j) can also be used to form the gap 104S(j).

[0217] Furthermore, electrical conduction between layer 104B(j) and layer 104G(j) can be suppressed. Furthermore, the phenomenon of current flowing between electrode 551B(i,j) and electrode 552G(j) via layer 104B(j) and layer 104G(j) can be suppressed. Furthermore, the phenomenon of current flowing between electrode 551G(i,j) and electrode 552B(j) via layer 104B(j) and layer 104G(j) can be suppressed. Furthermore, crosstalk occurring between light-emitting device 550B(i,j) and light-emitting device 550G(i,j) can be suppressed. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0218] For example, in a high-resolution display panel exceeding 1000 ppi, if electrical conduction is observed between layer 104B(j) and layer 104G(j), crosstalk will occur, narrowing the color gamut that can be displayed by the display panel. By providing gap 104S in a high-resolution display panel exceeding 1000 ppi, preferably a high-resolution display panel exceeding 2000 ppi, and more preferably an ultra-high-resolution display panel exceeding 5000 ppi, it is possible to provide a display panel that can display vivid colors.

[0219] <<Configuration Example of Light-Emitting Device 550R(i,j)>> The light-emitting device 550R(i,j) includes a light-emitting element 551R(i,j), an electrode 552R(j), a unit 103R(j), and a layer 104R(j). The unit 103R(j) has a function of emitting light. The light-emitting element 550R(i,j) also includes a layer 105R(j). The layer 105R(j) can be used, for example, as an electron injection layer.

[0220] <Structure Example 7 of Display Panel 700> The display panel 700 described in this embodiment includes an insulating film 573A and an insulating film 573B (see FIG. 4A).

[0221] <<Configuration Example of Insulating Film 573A>> The insulating film 573A is in contact with the protective layer 554B(j), and the protective layer 554B(j) has a region sandwiched between the insulating film 573A and the electrode 552B(j).

[0222] The insulating film 573A is in contact with the protective layer 554G(j), and the protective layer 554G(j) has a region sandwiched between the insulating film 573A and the electrode 552G(j).

[0223] The layer 104B(j) has a sidewall WL1, and the layer 104G(j) has a sidewall WL2. The sidewall WL2(j) faces the sidewall WL1, and a gap 104S(j) is sandwiched between the sidewall WL2(j) and the sidewall WL1.

[0224] Sidewall WL1 and sidewall WL2 are in contact with insulating film 573A.

[0225] The insulating film 573A is in contact with the partition wall 528 .

[0226] <<Configuration Example of Insulating Film 573B>> The insulating film 573B fills the gap 104S(j).

[0227] For example, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used for the insulating film 573B.

[0228] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material selected from these films can be used for the insulating film 573B.

[0229] For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, an IGZO film, or a film containing a stacked material selected from these can be used for the insulating film 573B. Note that a silicon nitride film is a dense film and has an excellent function of suppressing the diffusion of impurities such as water.

[0230] For example, a stacked film of silicon nitride formed by sputtering and silicon nitride formed by plasma enhanced atomic layer deposition (PEALD) can be used as the insulating film 573B. As a result, when a pinhole or a step is formed in the film formed by sputtering, the portion overlapping with the pinhole or the step can be blocked by using a film formed by ALD, which has good coverage.

[0231] For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or the like, or a laminated material or composite material of a plurality of resins selected from these can be used for the insulating film 573B.

[0232] For example, an organic material such as a reaction-curing adhesive, a photo-curing adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the insulating film 573B.

[0233] This can suppress the phenomenon of impurities diffusing into the light-emitting devices 550B(i,j) and 550G(i,j). Furthermore, the reliability of the light-emitting devices 550B(i,j) and 550G(i,j) can be improved. As a result, a novel display panel with excellent convenience, usefulness, and reliability can be provided.

[0234] <Structure Example 8 of Display Panel 700> A display panel of one embodiment of the present invention includes a colored layer CFB(j), a colored layer CFG(j), and a colored layer CFR(j).

[0235] <Configuration Example 1 of Unit 103B(j)> For example, a layer 111(B) that emits blue light EL(1), a layer 111(G) that emits green light EL(2), and a layer 111(R) that emits red light EL(3) can be used in one unit 103B(j) (see FIG. 5 ). This allows white light to be emitted.

[0236] Specifically, a stacked structure of a layer 111B containing a blue light-emitting material, a layer 111G containing a green light-emitting material, and a layer 111R containing a red light-emitting material can be used for unit 103B(j).

[0237] Furthermore, a layer containing a hole-transporting material, a layer containing an electron-transporting material, or a layer containing a bipolar material can be used in the unit 103B(j). For example, a hole-transporting material can be used in the layer 112(1). An electron-transporting material can be used in the layer 113. A bipolar material can be used in the layer 112(2).

[0238] The configuration used in unit 103B(j) can also be used in unit 103G(j) and unit 103R(j).

[0239] <<Configuration Example 1 of Colored Layers>> The colored layer CFB(j) overlaps with the light-emitting device 550B(i,j), the colored layer CFG(j) overlaps with the light-emitting device 550G(i,j), and the colored layer CFG(j) transmits light of a color different from that of the colored layer CFB(j). Furthermore, the colored layer CFR(j) overlaps with the light-emitting device 550R(i,j), and the colored layer CFR(j) transmits light of a color different from that of the colored layer CFB(j) and the colored layer CFG(j).

[0240] For example, a material that transmits blue light preferentially can be used for the colored layer CFB(j), which allows blue light to be extracted from white light.

[0241] For example, a material that preferentially transmits green light can be used for the colored layer CFG(j), which allows green light to be extracted from white light.

[0242] For example, a material that transmits red light preferentially can be used for the colored layer CFR(j), which allows red light to be extracted from white light.

[0243] <Configuration Example 2 of Unit 103B(j)> Furthermore, for example, a blue light-emitting material can be used for unit 103B(j), unit 103G(j), and unit 103R(j), which allows light-emitting device 550B(i,j), light-emitting device 550G(i,j), and light-emitting device 550R(i,j) to emit blue light.

[0244] Furthermore, instead of the colored layer, a color conversion layer can be used, for example, nanoparticles, quantum dots, or the like can be used for the color conversion layer.

[0245] For example, a color conversion layer that converts blue light into green light can be used instead of the colored layer CFG(j). This allows the blue light emitted by the light-emitting device 550G(i,j) to be converted into green light. Also, a color conversion layer that converts blue light into red light can be used instead of the colored layer CFR(j). This allows the blue light emitted by the light-emitting device 550R(i,j) to be converted into red light.

[0246] This allows the light-emitting device 550G(i,j) to be formed in the process of forming the light-emitting device 550B(i,j). Furthermore, the hue can be changed using the light-emitting device 550B(i,j) and the light-emitting device 550G(i,j). As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0247] <Structure Example 9 of Display Panel 700> A structure of a display panel of one embodiment of the present invention will be described with reference to FIG.

[0248] 4 in that light-emitting device 550B(i,j) includes unit 103B2(j), intermediate layer 106B(j), and layer 105B2(j), and light-emitting device 550G(i,j) includes unit 103G2(j), intermediate layer 106G(j), and layer 105G2(j). Here, the differences will be described in detail, and the above description will be used for parts where a similar configuration can be used.

[0249] Configuration Example 2 of Light-Emitting Device 550B(i,j) Light-emitting device 550B(i,j) includes unit 103B2(j), intermediate layer 106B(j), and layer 105B2(j) (see FIG. 6A).

[0250] Unit 103B2(j) comprises the area sandwiched between electrode 552B(j) and unit 103B(j).

[0251] For example, a configuration having a different emission color from that of unit 103B(j) can be used for unit 103B2(j). Specifically, unit 103B(j) emitting red light and green light and unit 103B2(j) emitting blue light can be used. This makes it possible to provide a light-emitting device that emits light of a desired color. For example, it is possible to provide a light-emitting device that emits white light.

[0252] Furthermore, for example, the light emitted from the unit 103B(j) and the unit 103B2(j) can be the same color. Specifically, the unit 103B(j) can emit blue light, and the unit 103B2(j) can emit blue light. This allows for high-luminance light emission while reducing power consumption.

[0253] <<Configuration Example 1 of Intermediate Layer 106B(j)>> The intermediate layer 106B(j) includes a region sandwiched between the unit 103B2(j) and the unit 103B(j). The intermediate layer 106B(j) can be used, for example, as a charge generation layer. The intermediate layer 106B(j) has a function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied.

[0254] The intermediate layer 106B(j) includes a composite material. The composite material includes a material having a hole transporting property and a substance having an electron accepting property, and the composite material has a density of 1×10 ２ Ω・cm or more 1×10 ８ The intermediate layer 106B(j) has an electrical resistivity of Ω·cm or less. The composite material that can be used for the layer 104B(j) can also be used for the intermediate layer 106B(j).

[0255] <<Configuration Example of Layer 105B2(j)>> The layer 105B2(j) includes a region sandwiched between the intermediate layer 106B(j) and the unit 103B(j). The layer 105B2(j) can be used, for example, as an electron injection layer.

[0256] The layer 105B2(j) includes a second organic compound and a second metal. For example, the first organic compound that can be used in the layer 105B(j) can be used as the second organic compound. The first metal that can be used in the layer 105B(j) can be used as the second metal. The second organic compound forms a half-occupied molecular orbital (SOMO) with the second metal.

[0257] Configuration Example 3 of Light-Emitting Device 550G(i,j) The light-emitting device 550G(i,j) includes a unit 103G2(j), an intermediate layer 106G(j), and a layer 105G2(j).

[0258] <<Configuration Example of Unit 103G2(j)>> The unit 103G2(j) includes a region sandwiched between the layer 105G(j) and the unit 103G(j).

[0259] <<Configuration Example of Intermediate Layer 106G(j)>> The intermediate layer 106G(j) has a region sandwiched between the unit 103G2(j) and the unit 103G(j).

[0260] The intermediate layer 106G(j) contains the same material having hole transport properties and material having electron acceptability as the intermediate layer 106B(j). Furthermore, a gap 106S(j) is provided between the intermediate layer 106G(j) and the intermediate layer 106B(j) (see FIGS. 6A and 7). Because the intermediate layers 106B(j) and 106G(j) are conductive, the gap 106S(j) functions to prevent electrical conduction between the intermediate layers 106B(j) and 106G(j).

[0261] <<Configuration Example 2 of Partition 528>> Partition 528 overlaps gap 104S(j), gap 554S(j), and gap 106S(j) between opening 528B(i,j) and opening 528G(i,j) (see Figures 6A and 6C).

[0262] This makes it possible to suppress the phenomenon of current flowing between electrode 551B(i,j) and electrode 552G(j) via layer 104B(j) and layer 104G(j) or intermediate layer 106B(j) and intermediate layer 106G(j). It also makes it possible to suppress the phenomenon of current flowing between electrode 551G(i,j) and electrode 552B(j) via layer 104B(j) and layer 104G(j). It also makes it possible to suppress the crosstalk phenomenon occurring between light-emitting device 550B(i,j) and light-emitting device 550G(i,j). As a result, it is possible to provide a novel display panel that is highly convenient, useful, and reliable.

[0263] <<Configuration Example of Layer 104B(j) and Layer 104G(j)>> The layer 104B(j) has a sidewall WL1, and the layer 104G(j) has a sidewall WL2 (see FIG. 7).

[0264] The sidewall WL2 faces the sidewall WL1, with a gap 104S(j) sandwiched between the sidewall WL2 and the sidewall WL1.

[0265] <<Configuration Example of Layer 105G2(j)>> The layer 105G2(j) includes a region sandwiched between the intermediate layer 106G(j) and the unit 103G(j) (see FIG. 6A). The layer 105G2(j) can be used, for example, as an electron injection layer.

[0266] Layer 105G2(j) includes a second organic compound and a second metal.

[0267] Layer 105G2(j) has a gap between it and layer 105B2(j) (see FIGS. 6A and 7).

[0268] This prevents the manufacturing equipment from being contaminated with alkali metals even when an etching method is used. Furthermore, adjacent light-emitting devices can be separated using an etching method. Furthermore, the phenomenon of current flowing between electrode 551B(i,j) and electrode 552G(j) through intermediate layer 106B(j) and intermediate layer 106G(j) can be suppressed. Furthermore, the phenomenon of current flowing between electrode 551G(i,j) and electrode 552B(j) through intermediate layer 106B(j) and intermediate layer 106G(j) can be suppressed. Furthermore, the crosstalk phenomenon occurring between light-emitting device 550B(i,j) and light-emitting device 550G(i,j) can be suppressed. As a result, a novel display panel with excellent convenience, usability, and reliability can be provided.

[0269] 8A and 8B , the structure of a display panel according to one embodiment of the present invention is described. Note that the display panel does not include a partition wall 528, which is different from the display panels described with reference to FIGS. 6 and 7.

[0270] Electrode 551G(i,j) has gap 551S(j) between it and electrode 551B(i,j) (see FIG. 8B). Gap 551S(j) overlaps with gap 104S(j), gap 106S(j), and gap 554S(j).

[0271] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0272] Embodiment 2 In this embodiment, a manufacturing method of a display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0273] 9 to 14 are diagrams illustrating a manufacturing method of a display panel according to one embodiment of the present invention.

[0274] <Example of Manufacturing Method of Display Panel> A manufacturing method of a display panel of one embodiment of the present invention includes the following steps 1 to 13. According to this method, for example, a display panel 700 of one embodiment of the present invention described with reference to FIG.

[0275] In the first step, electrodes 551B(i,j), 551G(i,j), and 551R(i,j) are formed. For example, a functional layer 520 is formed on a substrate 510, a conductive film is formed on the functional layer 520, and the conductive film is processed into a predetermined shape using photolithography (see FIG. 9A ).

[0276] In the second step, a partition 528 is formed between the electrode 551B(i,j) and the electrode 551G(i,j). For example, an insulating film is formed to cover the electrodes 551B(i,j) to 551R(i,j), and openings are formed by photolithography to expose parts of the electrodes 551B(i,j) to 551R(i,j) (see FIG. 9B ).

[0277] In the third step, the layer 104 containing a material having a hole-transporting property and a substance having an electron-accepting property is formed over the electrode 551B(i,j) and the electrode 551G(i,j) (see FIG. 10A). For example, the layer 104 is formed by vacuum evaporation over the electrode 551B(i,j), the electrode 551G(i,j), and the electrode 551R(i,j) so as to cover them. Specifically, the layer 104 is formed by co-evaporation.

[0278] <<Fourth Step>> In the fourth step, the units 103 are formed on the layer 104. For example, they are formed by vacuum deposition.

[0279] In the fifth step, a layer 1052 containing a second organic compound and a second metal is formed on the unit 103. For example, the layer 1052 is formed by vacuum evaporation. Specifically, the layer 1052 is formed by co-evaporation.

[0280] In the sixth step, the intermediate layer 106 containing a material having a hole-transporting property and a substance having an electron-accepting property is formed over the layer 1052. For example, the intermediate layer 106 is formed by vacuum evaporation.

[0281] In the seventh step, the units 1032 are formed on the intermediate layer 106. For example, they are formed by vacuum deposition. Specifically, they are formed by co-evaporation.

[0282] In the eighth step, the layer 105 containing a first organic compound and a first metal is formed on the unit 1032. For example, the layer 105 is formed by vacuum evaporation. Specifically, the layer 105 is formed by co-evaporation.

[0283] In the ninth step, an electrode 552 is formed on the layer 105. For example, the electrode 552 is formed by vacuum evaporation.

[0284] <<Tenth Step>> In the tenth step, a protective layer 554 is formed on the electrode 552 by ALD.

[0285] Furthermore, a resist RES is formed on the protective layer 554 (see FIGS. 10A and 10B). For example, the resist RES is formed at a position overlapping with the electrode 551B(i,j), the electrode 551G(i,j), and the electrode 551R(i,j).

[0286] <Eleventh Step> In the eleventh step, the protective layer 554B(j) and the protective layer 554G(j) are processed into a predetermined shape (see FIGS. 12A and 12B).

[0287] For example, a photoetching method, specifically, a resist RES and dry etching method is used to remove the portion overlapping with the partition wall 528. The electrode 552 can be used as an etching stopper.

[0288] Note that, after applying the dry etching method, foreign matter FM may remain (see FIGS. 11A and 11B). For example, foreign matter FM remaining near the side edges of the resist RES can be removed by using a wet etching method.

[0289] When the protective layer 554 contains aluminum oxide, the foreign matter FM can be removed using, for example, an etching solution containing oxalic acid.

[0290] The resist RES is then removed (see FIGS. 13A and 13B). For example, the resist RES is removed by an ashing method using oxygen plasma.

[0291] Note that a stacked film of a metal film that is easily oxidized and a film that is resistant to oxidation can be preferably used for the electrode 552. For example, a stacked structure in which a metal oxide film is sandwiched between the metal film and the protective layer 554 can be preferably used for the electrode 552. Specifically, a film including a conductive oxide film or an oxide semiconductor film can be used for the metal oxide film.

[0292] For example, a stacked film of a metal film containing silver and magnesium and an indium oxide-tin oxide (ITO) film can be used for the electrode 552. In this way, the indium oxide-tin oxide (ITO) film can be used to protect the metal film containing silver and magnesium from oxidation in an ashing step using oxygen plasma.

[0293] In step 12, the layer 104, the unit 103, the layer 1052, the intermediate layer 106, the unit 1032, the layer 105, and the electrode 552 are processed into a predetermined shape (see FIGS. 14A and 14B ), for example, into a strip shape extending in a direction intersecting with the plane of the paper.

[0294] Specifically, the protective layer 554B(j) and the protective layer 554G(j) are used as a hard mask to remove the portions overlapping with the partition wall 528. The partition wall 528 can also be used as an etching stopper.

[0295] For example, dry etching is performed under conditions that avoid using oxygen as an etching gas, which can prevent oxidation of the electrode 552 even when the electrode 552 includes a metal film that is easily oxidized.

[0296] Furthermore, the bias to be applied is suppressed to be as low as possible in the step of removing the layer 104, the unit 103, the layer 105, the intermediate layer 106, the unit 1032, and the layer 1052. This makes it possible to reduce damage to the layer 104, the unit 103, the layer 105, the intermediate layer 106, the unit 1032, and the layer 1052.

[0297] Note that layer 104 is processed into layers 104B(j), 104G(j), and 104R(j). Unit 103 is processed into units 103B(j), 103G(j), and 103R(j). Layer 1052 is processed into layers 105B2(j), 105G2(j), and 105R2(j). Intermediate layer 106 is processed into intermediate layer 106B(j), 106G(j), and 106R(j). Unit 1032 is processed into units 103B2(j), 103G2(j), and 103R2(j). Layer 105 is processed into layers 105B(j), 105G(j), and 105R(j). The electrode 552 is processed into an electrode 552B(j), an electrode 552G(j), and an electrode 552R(j).

[0298] Also, for example, gap 104S(j) is formed, and gap 104S(j) prevents electrical conduction between layer 104B(i,j) and layer 104G(i,j). Also, gap 106S(j) is formed, and gap 106S(j) prevents electrical conduction between intermediate layer 106B(i,j) and intermediate layer 106G(i,j).

[0299] Through the above steps, the light emitting device 550B(i,j) and the light emitting device 550G(i,j) can be formed separately, and the light emitting device 550R(i,j) can also be formed.

[0300] In the twelfth step, an insulating film 573 is formed on the electrode 552B(j), the electrode 552G(j), and the electrode 552R(j) in contact with the partition wall 528 to cover the light-emitting devices 550B(i,j), the light-emitting devices 550G(i,j), and the light-emitting devices 550R(i,j) (see FIG. 14A ). For example, a dense insulating film 573A and a flat insulating film 573B are stacked.

[0301] Specifically, a dense insulating film 573A is formed by chemical vapor deposition or atomic layer deposition, and a flat insulating film 573B is formed on the insulating film 573A by a coating method, thereby forming a high-quality insulating film 573 with few defects.

[0302] Through the above steps, the light emitting devices 550B(i,j), 550G(i,j), and 550R(i,j) can be protected by the insulating film 573.

[0303] This allows the protective layers 554B(i,j) and 554G(i,j) to have resistance to the step of removing the structures on the partition walls 528. Furthermore, processing conditions that would remove the resist RES made of an organic material such as a photopolymer can be applied to the step of removing the structures on the partition walls 528. Furthermore, the protective layer 554 can be used to protect the light-emitting device when removing the resist RES made of an organic material such as a photopolymer. As a result, it is possible to provide a novel method for manufacturing a display panel that is highly convenient, useful, and reliable.

[0304] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0305] In this embodiment, a structure of a light-emitting device 150 that can be applied to a display panel of one embodiment of the present invention will be described with reference to FIG. 15. Note that the structure that can be used for the light-emitting device 150 can be used for, for example, the light-emitting device 550B(i,j), the light-emitting device 550G(i,j), or the light-emitting device 550R(i,j) described in Embodiment 1.

[0306] <Configuration Example of Light-Emitting Device 150> Light-emitting device 150 described in this embodiment has electrode 101, electrode 102, and unit 103. Electrode 102 has a region that overlaps with electrode 101, and unit 103 has a region that is sandwiched between electrode 101 and electrode 102. Note that the configuration that can be used for unit 103 can be used for, for example, unit 103B(j), unit 103G(j), or unit 103R(j) described in embodiment 1.

[0307] <Configuration Example of Unit 103> The unit 103 has a single layer structure or a laminated structure. For example, the unit 103 includes a layer 111, a layer 112, and a layer 113 (see FIG. 15A). The unit 103 has a function of emitting light EL1.

[0308] Layer 111 comprises a region sandwiched between layers 112 and 113 , layer 112 comprises a region sandwiched between electrode 101 and layer 111 , and layer 113 comprises a region sandwiched between electrode 102 and layer 111 .

[0309] For example, a layer selected from a light-emitting layer, a hole-transporting layer, an electron-transporting layer, a carrier-blocking layer, etc. can be used in the unit 103. Also, a layer selected from a hole-injecting layer, an electron-injecting layer, an exciton-blocking layer, a charge-generating layer, etc. can be used in the unit 103.

[0310] <<Structure Example of Layer 112>> For example, a material having a hole-transporting property can be used for the layer 112. The layer 112 can also be referred to as a hole-transport layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111 is used for the layer 112 is preferable. This can suppress energy transfer from excitons generated in the layer 111 to the layer 112.

[0311] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0312] For example, an amine compound or an organic compound having a π-electron-rich heteroaromatic ring skeleton can be used as a material having hole transport properties. Specifically, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used. In particular, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole transport properties, and contributes to reducing driving voltage.

[0313] <<Structure Example of Layer 113>> For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113. The layer 113 can also be referred to as an electron-transporting layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111 is used for the layer 113 is preferable. This can suppress energy transfer from excitons generated in the layer 111 to the layer 113.

[0314] [Electron-Transporting Material] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.

[0315] When the square root of the electric field strength [V / cm] is 600, the electron mobility is 1×10 −７ cm ２ / Vs or more, 5×10 −５ cm ２ A material having a .DELTA. / Vs or less can be suitably used as a material having electron transport properties. This can suppress the electron transport properties in the electron transport layer. Alternatively, it can control the amount of electrons injected into the light-emitting layer. Alternatively, it can prevent the light-emitting layer from becoming an electron-excess state.

[0316] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a pyridine skeleton, and heterocyclic compounds having a triazine skeleton. In particular, heterocyclic compounds having a diazine skeleton or heterocyclic compounds having a pyridine skeleton are preferred because of their high reliability. Furthermore, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties and can reduce driving voltage.

[0317] [Material Having an Anthracene Skeleton] An organic compound having an anthracene skeleton can be used for the layer 113. In particular, an organic compound having both an anthracene skeleton and a heterocyclic skeleton can be preferably used.

[0318] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used. Alternatively, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring can be used. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be suitably used as the heterocyclic skeleton.

[0319] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used. Alternatively, an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton containing two heteroatoms in the ring can be used. Specifically, a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used as the heterocyclic skeleton.

[0320] [Configuration Example of Mixed Material] A material in which a plurality of substances are mixed can be used for the layer 113. Specifically, a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex, and a substance having an electron-transport property can be used for the layer 113. Note that the HOMO level of the material having an electron-transport property is more preferably −6.0 eV or higher.

[0321] For example, a composite material of a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104. Specifically, a composite material of a substance having an electron-accepting property and a substance having a relatively deep HOMO level HOMO1 of −5.7 eV or more and −5.4 eV or less can be used for the layer 104 (see FIG. 15B ). In combination with a structure in which such a composite material is used for the layer 104, the mixed material can be suitably used for the layer 113. This can improve the reliability of the light-emitting device.

[0322] Furthermore, a structure in which the mixed material is used for the layer 113 and the composite material is used for the layer 104 can be preferably combined with a structure in which a material having a hole-transporting property is used for the layer 112. For example, a substance having a HOMO level HOMO2 in the range of −0.2 eV to 0 eV with respect to the above-mentioned relatively deep HOMO level HOMO1 can be used for the layer 112 (see FIG. 15B ). This can improve the reliability of the light-emitting device.

[0323] The alkali metal, alkali metal compound, or alkali metal complex is preferably present with a concentration difference (including zero) in the thickness direction of the layer 113 .

[0324] For example, a metal complex containing an 8-hydroxyquinolinato structure can be used. Also, a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure (for example, a 2-methyl-substituted or 5-methyl-substituted metal complex) can be used.

[0325] <<Structure Example 1 of Layer 111>> For example, a light-emitting material, or a light-emitting material and a host material, can be used for the layer 111. The layer 111 can also be referred to as a light-emitting layer. Note that a structure in which the layer 111 is disposed in a region where holes and electrons recombine can be preferred. This allows the energy generated by carrier recombination to be efficiently converted into light and emitted. Also, a structure in which the layer 111 is disposed away from metals used for electrodes, etc. can be preferred. This can suppress the quenching phenomenon caused by metals used for electrodes, etc.

[0326] For example, the light-emitting material can be a fluorescent material, a phosphorescent material, or a material exhibiting thermally activated delayed fluorescence (TADF) (also called a TADF material), which allows the energy generated by carrier recombination to be emitted from the light-emitting material as light EL1 (see FIG. 15A).

[0327] [Fluorescent Light-Emitting Substance] A fluorescent light-emitting substance can be used for the layer 111. For example, the fluorescent light-emitting substances exemplified below can be used for the layer 111. Note that the fluorescent light-emitting substance is not limited thereto, and various known fluorescent light-emitting substances can be used for the layer 111.

[0328] In particular, condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole trapping properties and are excellent in luminous efficiency or reliability.

[0329] [Phosphorescent Material] A phosphorescent material can be used for the layer 111. For example, the phosphorescent materials exemplified below can be used for the layer 111. Note that the material is not limited thereto, and various known phosphorescent materials can be used for the layer 111.

[0330] For example, the layer 111 can be formed using an organometallic iridium complex having a 4H-triazole skeleton, an organometallic iridium complex having a 1H-triazole skeleton, an organometallic iridium complex having an imidazole skeleton, an organometallic iridium complex having a phenylpyridine derivative having an electron-withdrawing group as a ligand, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, or the like.

[0331] [Substances Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used for the layer 111. For example, the TADF materials exemplified below can be used as the luminescent material. However, without being limited thereto, various known TADF materials can be used as the luminescent material.

[0332] TADF materials have a small difference between the S1 and T1 levels, allowing reverse intersystem crossing (upconversion) from a triplet excited state to a singlet excited state with a small amount of thermal energy. This allows efficient generation of a singlet excited state from a triplet excited state. Furthermore, the triplet excited energy can be converted into luminescence.

[0333] Furthermore, an exciplex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0334] The T1 level can be determined by using a phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K). When a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and when a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0335] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0336] For example, TADF materials can include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be used as TADF materials.

[0337] Furthermore, for example, a heterocyclic compound having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used as the TADF material.

[0338] The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. In particular, among skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeletons, diazine skeletons (pyrimidine skeletons, pyrazine skeletons, pyridazine skeletons), and triazine skeletons are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because they have high electron acceptability and good reliability.

[0339] Among skeletons having a π-electron-rich heteroaromatic ring, it is preferable to have at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton because they are stable and reliable. Note that the dibenzofuran skeleton is preferable as the furan skeleton, and the dibenzothiophene skeleton is preferable as the thiophene skeleton. Furthermore, the indole skeleton, the carbazole skeleton, the indolocarbazole skeleton, the bicarbazole skeleton, and the 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable as the pyrrole skeleton.

[0340] In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, thereby enabling efficient thermally activated delayed fluorescence to be obtained. In addition, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used instead of the π-electron-deficient heteroaromatic ring. In addition, an aromatic amine skeleton, a phenazine skeleton, or the like may be used as the π-electron-rich skeleton.

[0341] Furthermore, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.

[0342] In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0343] <<Structure Example 2 of Layer 111>> A material having a carrier transport property can be used as the host material. For example, a material having a hole transport property, a material having an electron transport property, a substance exhibiting thermally activated delayed fluorescence, a material having an anthracene skeleton, a mixed material, or the like can be used as the host material. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111 is used as the host material is preferable. This can suppress energy transfer from excitons generated in the layer 111 to the host material.

[0344] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0345] For example, a material having a hole-transport property that can be used for the layer 112 can be used for the layer 111. Specifically, a material having a hole-transport property that can be used for a hole-transport layer can be used for the layer 111.

[0346] [Material Having Electron-Transporting Properties] For example, a material having electron-transporting properties that can be used for the layer 113 can be used for the layer 111. Specifically, a material having electron-transporting properties that can be used for an electron-transport layer can be used for the layer 111.

[0347] [Materials Having an Anthracene Skeleton] Organic compounds having an anthracene skeleton can be used as host materials. In particular, when a fluorescent material is used as the light-emitting material, organic compounds having an anthracene skeleton are suitable. This allows for the realization of light-emitting devices with good luminous efficiency and durability.

[0348] As the organic compound having an anthracene skeleton, an organic compound having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, when the host material has a carbazole skeleton, it is preferred because it has improved hole injection and transport properties. In particular, when the host material contains a dibenzocarbazole skeleton, it is preferred because its HOMO level is shallower by about 0.1 eV than that of carbazole, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. From the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0349] Therefore, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, or a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton is preferable as the host material.

[0350] [Substances Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used as a host material. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material can be converted to singlet excitation energy by reverse intersystem crossing. Furthermore, the excitation energy can be transferred to a light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can improve the luminous efficiency of a light-emitting device.

[0351] This is very effective when the luminescent material is a fluorescent luminescent material. Furthermore, in this case, in order to obtain high luminous efficiency, it is preferable that the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Furthermore, it is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.

[0352] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0353] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for luminescence) possessed by the fluorescent material. The protecting group is preferably a substituent that does not have a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that there are multiple protecting groups. Substituents that do not have a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination.

[0354] Here, the term "luminophore" refers to an atomic group (skeleton) that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring.

[0355] Examples of the fused aromatic ring or fused heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0356] For example, a TADF material that can be used as a light-emitting material can be used as a host material.

[0357] [Configuration Example 1 of Mixed Material] A material obtained by mixing a plurality of substances can be used as the host material. For example, a material having an electron-transporting property and a material having a hole-transporting property can be used as the mixed material. The weight ratio of the material having a hole-transporting property to the material having an electron-transporting property contained in the mixed material may be set to (material having a hole-transporting property / material having an electron-transporting property) = (1 / 19) or more and (19 / 1) or less. This allows the carrier transport property of the layer 111 to be easily adjusted. Furthermore, the recombination region can be easily controlled.

[0358] [Configuration Example 2 of Mixed Material] A material mixed with a phosphorescent material can be used as a host material. When a fluorescent material is used as an emitting material, the phosphorescent material can be used as an energy donor that provides excitation energy to the fluorescent material.

[0359] A mixed material containing a material that forms an exciplex can be used as the host material. For example, a material whose emission spectrum of the formed exciplex overlaps with the wavelength of the lowest energy absorption band of the light-emitting substance can be used as the host material. This allows for smooth energy transfer, improving luminous efficiency and reducing driving voltage.

[0360] At least one of the materials forming the exciplex can be a phosphorescent material, which allows for the utilization of reverse intersystem crossing or the efficient conversion of triplet excitation energy to singlet excitation energy.

[0361] As a combination of materials for forming an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Alternatively, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. This allows for efficient formation of an exciplex. The LUMO level and HOMO level of the material can be derived from electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement.

[0362] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of exciplexes can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0363] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0364] 15A , the structure of the light-emitting device 150 according to one embodiment of the present invention can be used for the light-emitting device 550B(i,j), the light-emitting device 550G(i,j), or the light-emitting device 550R(i,j) described in Embodiment 1, for example.

[0365] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, a unit 103, and a layer 104. The electrode 102 has a region overlapping with the electrode 101, and the unit 103 has a region sandwiched between the electrode 101 and the electrode 102. The layer 104 has a region sandwiched between the electrode 101 and the unit 103. Note that, for example, the configuration described in Embodiment 3 can be used for the unit 103. Furthermore, the configuration that can be used for the electrode 101 can be used for, for example, the electrode 551B(i,j), the electrode 551G(i,j), or the electrode 551R(i,j) described in Embodiment 1. Furthermore, the configuration that can be used for the layer 104 can be used for, for example, the layer 104B(j), the layer 104G(j), or the layer 104R(j) described in Embodiment 1.

[0366] <Structure Example of Electrode 101> For example, a conductive material can be used for the electrode 101. Specifically, the electrode 101 can be formed of a single layer or a stacked layer of a film containing a metal, an alloy, or a conductive compound.

[0367] For example, a film that efficiently reflects light can be used for the electrode 101. Specifically, a metal film such as an alloy containing silver and copper, an alloy containing silver and palladium, or aluminum can be used for the electrode 101.

[0368] Furthermore, for example, a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 101. This allows a microresonator structure (microcavity) to be provided in the light-emitting device 150. Alternatively, light of a specific wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow spectral half-width can be extracted. Alternatively, light of a vivid color can be extracted.

[0369] Furthermore, for example, a film that transmits visible light can be used for the electrode 101. Specifically, a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used for the electrode 101 in a single layer or stacked layers.

[0370] In particular, a material having a work function of 4.0 eV or more can be suitably used.

[0371] For example, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (abbreviation: IWZO), etc. can be used.

[0372] Alternatively, for example, a conductive oxide containing zinc can be used, such as zinc oxide, zinc oxide doped with gallium, or zinc oxide doped with aluminum.

[0373] Alternatively, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0374] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0375] 15A , the structure of the light-emitting device 150 according to one embodiment of the present invention can be used for the light-emitting device 550B(i,j), the light-emitting device 550G(i,j), or the light-emitting device 550R(i,j) described in Embodiment 1, for example.

[0376] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, a unit 103, and a layer 105. The electrode 102 has a region overlapping with the electrode 101, and the unit 103 has a region sandwiched between the electrode 101 and the electrode 102. The layer 105 has a region sandwiched between the unit 103 and the electrode 102. Note that, for example, the structure described in Embodiment 3 can be used for the unit 103. Furthermore, the structure that can be used for the electrode 102 can be used for, for example, the electrode 552B(j), the electrode 552G(j), or the electrode 552R(j) described in Embodiment 1. Furthermore, the material that can be used for the layer 105 can be used for, for example, the layer 105B(j), the layer 105G(j), or the layer 105R(j) described in Embodiment 1.

[0377] <Structure Example of Electrode 102> For example, a conductive material can be used for the electrode 102. Specifically, a material containing a metal, an alloy, or a conductive compound can be used for the electrode 102 in a single layer or stacked layers.

[0378] For example, the material that can be used for the electrode 101 described in Embodiment 4 can be used for the electrode 102. In particular, a material having a work function smaller than that of the electrode 101 can be suitably used for the electrode 102. Specifically, a material having a work function of 3.8 eV or less is preferred.

[0379] For example, the electrode 102 can be made of elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these.

[0380] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these (MgAg, AlLi) can be used for the electrode 102. Incidentally, a laminate material of an alloy containing these and a conductive oxide can be used for the electrode 102. Specifically, a laminate material of MgAg and ITO can be used for the electrode 102.

[0381] <Structure Example of Layer 105> For example, a material having an electron injecting property can be used for the layer 105. The layer 105 can also be referred to as an electron injecting layer.

[0382] Specifically, a substance having donor properties can be used for the layer 105. Alternatively, a composite material of a substance having donor properties and a material having electron transport properties can be used for the layer 105. Alternatively, an electride can be used for the layer 105. This can facilitate injection of electrons from the electrode 102, for example. Alternatively, not only a material having a low work function but also a material having a high work function can be used for the electrode 102. Alternatively, a material for the electrode 102 can be selected from a wide range of materials regardless of the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 102. Alternatively, the driving voltage of the light-emitting device can be reduced.

[0383] [Substance Having Donor Properties] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the substance having donor properties. Alternatively, organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can also be used as the substance having donor properties.

[0384] [Configuration Example 1 of Composite Material] A composite material of a plurality of substances can be used as a material having an electron injecting property. For example, a material having a donor property and a material having an electron transport property can be used as a composite material.

[0385] [Electron-Transporting Material] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.

[0386] For example, the material having an electron transporting property that can be used for the unit 103 can be used for the composite material.

[0387] [Configuration Example 2 of Composite Material] A microcrystalline alkali metal fluoride and a material having an electron-transporting property can be used for the composite material. Alternatively, a microcrystalline alkaline earth metal fluoride and a material having an electron-transporting property can be used for the composite material. In particular, a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used. Alternatively, a composite material containing an organic compound having a bipyridine skeleton can be preferably used. This can reduce the refractive index of the layer 104. Alternatively, the external quantum efficiency of the light-emitting device can be improved.

[0388] [Electride] For example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration can be used as a material having electron injection properties.

[0389] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0390] Embodiment 6 In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG. 16A.

[0391] FIG. 16A is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention.

[0392] <Configuration Example of Light-Emitting Device 150> Furthermore, light-emitting device 150 described in this embodiment has electrode 101, electrode 102, unit 103, and intermediate layer 106 (see FIG. 16A ). Electrode 102 has a region overlapping with electrode 101, and unit 103 has a region sandwiched between electrode 101 and electrode 102. Intermediate layer 106 has a region sandwiched between unit 103 and electrode 102.

[0393] <<Configuration Example of Intermediate Layer 106>> The intermediate layer 106 includes a layer 106(1) and a layer 106(2). The layer 106(2) includes a region sandwiched between the layer 106(1) and the electrode 102.

[0394] <<Configuration Example of Layer 106(1)>> For example, a material having electron transport properties can be used for the layer 106(1). The layer 106(1) can also be referred to as an electron relay layer. By using the layer 106(1), the layer in contact with the anode side of the layer 106(1) can be separated from the layer in contact with the cathode side of the layer 106(1). The interaction between the layer in contact with the anode side of the layer 106(1) and the layer in contact with the cathode side of the layer 106(1) can be reduced. Electrons can be smoothly supplied to the layer in contact with the anode side of the layer 106(1).

[0395] A substance having a LUMO level between the LUMO level of an electron-accepting substance included in a layer in contact with the anode side of the layer 106(1) and the LUMO level of a substance included in a layer in contact with the cathode side of the layer 106(1) can be suitably used for the layer 106(1).

[0396] For example, a material having a LUMO level in the range of −5.0 eV or more, preferably −5.0 eV or more and −3.0 eV or less, can be used for the layer 106(1).

[0397] Specifically, phthalocyanine-based materials can be used for the layer 106(1), or metal complexes having metal-oxygen bonds and aromatic ligands can be used for the layer 106(1).

[0398] <<Configuration Example of Layer 106(2)>> For example, a material that supplies electrons to the anode side and holes to the cathode side when a voltage is applied can be used for the layer 106(2). Specifically, it can supply electrons to the unit 103 arranged on the anode side. The layer 106(2) can also be called a charge generation layer.

[0399] Specifically, the layer 106(2) can be formed using a material having a hole-injecting property that can be used for the layer 104. For example, a composite material can be used for the layer 106(2). Alternatively, the layer 106(2) can be formed using a stacked film in which a film containing the composite material and a film containing a material having a hole-transporting property are stacked.

[0400] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0401] Embodiment 7 In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIGS. 16B and 17. FIG.

[0402] FIG. 16B is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, which has a structure different from that illustrated in FIG. 16A.

[0403] FIG. 17 is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, which has a structure different from that illustrated in FIG. 16B.

[0404] <Configuration Example 1 of Light-Emitting Device 150> Light-emitting device 150 described in this embodiment has electrode 101, electrode 102, unit 103, intermediate layer 106, and unit 103(12) (see FIG. 16B ). Electrode 102 has a region overlapping with electrode 101, unit 103 has a region sandwiched between electrode 101 and electrode 102, and intermediate layer 106 has a region sandwiched between unit 103 and electrode 102. Furthermore, unit 103(12) has a region sandwiched between intermediate layer 106 and electrode 102, and unit 103(12) has a function of emitting light EL1(2).

[0405] A configuration including the intermediate layer 106 and multiple units is sometimes called a stacked light-emitting device or a tandem light-emitting device. This allows for high-luminance light emission while maintaining a low current density. Alternatively, it can improve reliability. Alternatively, it can reduce the driving voltage compared with the same luminance. Alternatively, it can reduce power consumption.

[0406] <<Configuration Example of Unit 103 (12)>> The configuration that can be used for the unit 103 can be used for the unit 103 (12). In other words, the light-emitting device 150 has a plurality of stacked units. Note that the number of stacked units is not limited to two, and three or more units can be stacked.

[0407] The same configuration as unit 103 can be used for unit 103(12), or a different configuration from unit 103 can be used for unit 103(12).

[0408] For example, a configuration having an emission color different from that of the unit 103 (12) can be used. Specifically, a unit 103 that emits red light and green light and a unit 103 (12) that emits blue light can be used. This makes it possible to provide a light-emitting device that emits light of a desired color. For example, it is possible to provide a light-emitting device that emits white light.

[0409] The intermediate layer 106 has a function of supplying electrons to one of the unit 103 and the unit 103(12) and supplying holes to the other. For example, the intermediate layer 106 described in Embodiment 6 can be used.

[0410] <Configuration Example 2 of Light-Emitting Device 150> The light-emitting device 150 described in this embodiment has an electrode 101, an electrode 102, a unit 103, an intermediate layer 106, a unit 103 (12), a unit 103 (13), a layer 105 (13), and an intermediate layer 106 (13) (see Figure 17).

[0411] Note that this device differs from the light-emitting device 150 described with reference to FIG. 16B in that it has a unit 103(13), a layer 105(13), and an intermediate layer 106(13) between the intermediate layer 106 and the unit 103(12).

[0412] Layer 111 has the function of emitting light EL1, layer 111(12) has the function of emitting light EL1(2), layer 111(13) has the function of emitting light EL1(3), and layer 111(14) has the function of emitting light EL1(4).

[0413] For example, a light-emitting material that emits blue light can be used for the layers 111 and 111(12). Also, for example, a light-emitting material that emits yellow light can be used for the layer 111(13). Also, for example, a light-emitting material that emits red light can be used for the layer 111(14).

[0414] For example, a structure that can be used for unit 103 can be used for unit 103(13), a structure that can be used for layer 105 can be used for layer 105(13), and a structure that can be used for intermediate layer 106 can be used for intermediate layer 106(13).

[0415] <Method of Manufacturing Light-Emitting Device 150> For example, the layers of the electrode 101, the electrode 102, the unit 103, the intermediate layer 106, and the unit 103 (12) can be formed using a dry method, a wet method, a vapor deposition method, a droplet discharge method, a coating method, a printing method, etc. Also, different methods can be used to form each component.

[0416] Specifically, the light-emitting device 150 can be produced using a vacuum deposition device, an inkjet device, a spin coater, a coating device, a gravure printing device, an offset printing device, a screen printing device, or the like.

[0417] For example, an electrode can be formed by a wet method using a paste of a metal material or a sol-gel method. Also, an indium oxide-zinc oxide film can be formed by a sputtering method using a target containing 1 wt % to 20 wt % of zinc oxide added to indium oxide. Also, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 wt % to 5 wt % of tungsten oxide and 0.1 wt % to 1 wt % of zinc oxide added to indium oxide.

[0418] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0419] Embodiment 8 In this embodiment, a structure of a data processing device according to one embodiment of the present invention will be described with reference to FIGS.

[0420] 18 to 20 illustrate a configuration of an information processing device of one embodiment of the present invention. Fig. 18A is a block diagram of the information processing device, and Figs. 18B to 18E are perspective views illustrating the configuration of the information processing device. Figs. 19A to 19E are perspective views illustrating the configuration of the information processing device. Figs. 20A and 20B are perspective views illustrating the configuration of the information processing device.

[0421] <Information Processing Device> An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 18A).

[0422] The arithmetic unit 5210 has a function of receiving operation information and a function of supplying image information based on the operation information.

[0423] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function for supplying operation information, and a function for receiving image information. The input / output device 5220 also includes a function for supplying detection information, a function for supplying communication information, and a function for receiving communication information.

[0424] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on an operation by the user of the information processing device 5200B.

[0425] Specifically, the input unit 5240 can use a keyboard, hardware buttons, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye-gaze input device, an attitude detection device, or the like.

[0426] The display portion 5230 has a function of displaying a display panel and displaying image information. For example, the display panel described in Embodiment 1 can be used as the display portion 5230.

[0427] The detection unit 5250 has a function of supplying detection information, for example, a function of detecting the surrounding environment in which the information processing device is used and supplying the detected information.

[0428] Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250 .

[0429] The communication unit 5290 has a function of receiving and supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0430] <<Configuration Example 1 of Information Processing Device>> For example, an outer shape that conforms to a cylindrical pillar or the like can be applied to the display unit 5230 (see FIG. 18B ). It also has a function of changing the display method according to the illuminance of the usage environment. It also has a function of detecting the presence of a person and changing the display content. This allows it to be installed on a pillar of a building, for example. It can also display advertisements, guidance, etc. It can also be used for digital signage, etc.

[0431] <<Configuration Example 2 of Information Processing Device>> For example, the information processing device may have a function for generating image information based on the trajectory of a pointer used by a user (see FIG. 18C ). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more may be used. Alternatively, multiple display panels may be arranged to form a single display area. Alternatively, multiple display panels may be arranged to form a multi-screen. This allows the information processing device to be used, for example, in an electronic blackboard, an electronic bulletin board, an electronic signboard, etc.

[0432] <<Configuration Example 3 of Information Processing Device>> Information can be received from another device and displayed on the display unit 5230 (see FIG. 18D ). Alternatively, several options can be displayed. Alternatively, the user can select several options and send a reply to the sender of the information. Alternatively, for example, the device may have a function to change the display method depending on the illuminance of the usage environment. This makes it possible to reduce the power consumption of the wristwatch-type mobile terminal device, for example. Alternatively, for example, an image can be displayed on the wristwatch-type mobile terminal device so that it can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0433] Configuration Example 4 of Information Processing Device The display unit 5230 has, for example, a curved surface that curves gently along the side of the housing (see FIG. 18E ). Alternatively, the display unit 5230 has a display panel that has a function of displaying information on, for example, the front, side, top, and back of the mobile phone. This makes it possible to display information not only on the front of the mobile phone but also on the side, top, and back.

[0434] <<Configuration Example 5 of Information Processing Device>> For example, information can be received from the Internet and displayed on the display unit 5230 (see FIG. 19A ). Alternatively, a created message can be confirmed on the display unit 5230. Alternatively, a created message can be transmitted to another device. Alternatively, for example, the smartphone may have a function of changing the display method depending on the illuminance of the usage environment. This can reduce the power consumption of the smartphone. Alternatively, for example, an image can be displayed on the smartphone so that the smartphone can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0435] <<Configuration Example 6 of Information Processing Device>> A remote controller can be used as the input unit 5240 (see FIG. 19B ). Alternatively, information can be received from a broadcasting station or the Internet, for example, and displayed on the display unit 5230. Alternatively, a user can be photographed using the detection unit 5250. Alternatively, video of the user can be transmitted. Alternatively, the user's viewing history can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, programs or videos can be displayed based on the recommendation information. Alternatively, for example, the device has a function to change the display method depending on the illuminance of the usage environment. This allows images to be displayed on the television system so that it can be used appropriately even when strong external light shines indoors on a sunny day.

[0436] <<Configuration Example 7 of Information Processing Device>> For example, learning materials can be received from the Internet and displayed on the display unit 5230 (see FIG. 19C ). Alternatively, a report can be input using the input unit 5240 and sent to the Internet. Alternatively, the results of corrections or evaluation of the report can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, suitable learning materials can be selected and displayed based on the evaluation.

[0437] For example, an image signal can be received from another information processing device and displayed on the display unit 5230. Alternatively, the display unit 5230 can be used as a sub-display by being placed on a stand or the like. This allows images to be displayed on the tablet computer so that the tablet computer can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0438] <<Configuration Example 8 of Information Processing Device>> The information processing device includes, for example, a plurality of display units 5230 (see FIG. 19D ). For example, an image can be captured by the detection unit 5250 and displayed on the display unit 5230. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, the captured image can be transmitted to the Internet. Alternatively, the information processing device includes a function to change the capture conditions depending on the illuminance of the usage environment. This allows the subject to be displayed on the digital camera so that it can be viewed appropriately even in an environment with strong external light, such as outdoors on a sunny day.

[0439] <<Configuration Example 9 of Information Processing Device>> For example, another information processing device can be used as a slave, and the information processing device of this embodiment can be used as a master to control the other information processing device (see FIG. 19E ). Alternatively, for example, a portion of image information can be displayed on the display unit 5230, and another portion of the image information can be displayed on the display unit of the other information processing device. An image signal can be supplied. Alternatively, information to be written can be obtained from an input unit of the other information processing device using the communication unit 5290. This allows a wide display area to be utilized, for example, using a portable personal computer.

[0440] <<Configuration Example 10 of Information Processing Device>> The information processing device includes, for example, a detection unit 5250 that detects acceleration or orientation (see FIG. 20A ). Alternatively, the detection unit 5250 can provide information related to the user's position or the direction the user is facing. Alternatively, the information processing device can generate image information for the right eye and image information for the left eye based on the user's position or the direction the user is facing. Alternatively, the display unit 5230 includes a display area for the right eye and a display area for the left eye. This allows, for example, an image of a virtual reality space that provides an immersive experience to be displayed on a goggle-type information processing device.

[0441] <<Configuration Example 11 of Information Processing Device>> The information processing device includes, for example, an imaging device and a detection unit 5250 that detects acceleration or orientation (see FIG. 20B ). Alternatively, the detection unit 5250 can provide information related to the user's position or the direction the user is facing. Alternatively, the information processing device can generate image information based on the user's position or the direction the user is facing. This makes it possible to display information attached to a real landscape, for example. Alternatively, an image of an augmented reality space can be displayed on a glasses-type information processing device.

[0442] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0443] In this example, a structure of a manufactured display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0444] 21A is a diagram illustrating the arrangement of pixels in the manufactured display panel, and FIG. 21B is a transmission electron microscope photograph illustrating a cross section taken along the cutting line Y3-Y4 shown in FIG. 21A.

[0445] <Configuration 1 of Display Panel> The manufactured display panel has a cross-sectional configuration similar to that of the display panel described with reference to Fig. 6A and Fig. 7. The display panel includes light-emitting devices 550B(i,j), light-emitting devices 550G(i,j), partition walls 528, protective layers 554B(j), and protective layers 554G(j) (see Fig. 6, Fig. 7, and Fig. 21B).

[0446] <<Configuration 1 of Light-Emitting Device 550B(i,j)>> Light-emitting device 550B(i,j) includes electrode 551B(i,j), electrode 552B(j), unit 103B(j), and layer 104B(j), where electrode 552B(j) overlaps electrode 551B(i,j). Note that electrode 551B(i,j) is formed on reflective film REFB (see FIG. 21B ).

[0447] Unit 103B(j) comprises a region sandwiched between electrode 552B(j) and electrode 551B(i,j).

[0448] The layer 104B(j) has a region sandwiched between the unit 103B(j) and the electrode 551B(i,j), and the layer 104B(j) includes a first material having hole-transporting properties and a first substance having electron-accepting properties.

[0449] Protective layer 554B(j) contacts electrode 552B(j), and electrode 552B(j) is sandwiched between protective layer 554B(j) and electrode 551B(i,j).

[0450] <<Configuration 1 of Light-Emitting Device 550G(i,j)>> Light-emitting device 550G(i,j) includes electrode 551G(i,j), electrode 552G(j), unit 103G(j), and layer 104G(j), where electrode 552G(j) overlaps electrode 551G(i,j) (see FIGS. 6A , 7 , and 21B ). Note that electrode 551G(i,j) is formed on reflective film REFG (see FIG. 21B ).

[0451] The unit comprises a region sandwiched between electrode 552G(j) and electrode 551G(i,j).

[0452] Layer 104G(j) comprises a region sandwiched between unit 103G(j) and electrode 551G(i,j), layer 104G(j) includes a material having a first hole-transporting property and a substance having a first electron-accepting property, and layer 104G(j) comprises gap 104S(j) between layer 104B(j).

[0453] The protective layer 554G(j) has a gap 554S(j) between it and the protective layer 554B(j), and the gap 554S(j) overlaps with the gap 104S(j).

[0454] In addition, the protective layer 554G(j) includes a region 554C(j) that is continuous with the protective layer 554B(j) (see FIG. 21A). In other words, the protective layer 554G(j) is not separated from the protective layer 554B(j) by a gap 554S(j).

[0455] When protective layer 554G(j) has region 554C(j) continuous with protective layer 554B(j), protective layer 554B(j) is a region overlapping electrode 551B(i,j) of the protective layer in which gap 554S(j) is provided, and protective layer 554G(j) is a region overlapping electrode 551G(i,j) of the protective layer. Note that protective layer 554G(j) has gap 554S(j) between it and protective layer 554B(j), and a straight line drawn from electrode 551G(i,j) to electrode 551B(i,j) in a top view crosses gap 554S(j) with a probability equal to or greater than the probability of crossing continuous region 554C(j).

[0456] The protective layer 554G(j) contacts the electrode 552G(j), and the electrode 552G(j) is sandwiched between the protective layer 554G(j) and the electrode 551G(i,j).

[0457] The partition wall 528 has an opening 528B(i,j) and an opening 528G(i,j). The opening 528B(i,j) overlaps with the electrode 551B(i,j), and the opening 528G(i,j) overlaps with the electrode 551G(i,j).

[0458] The partition wall 528 overlaps the gap 104S(j) and the gap 554S(j) between the opening 528B(i,j) and the opening 528G(i,j).

[0459] <<Configuration 2 of Light-Emitting Device 550B(i,j)>> Light-emitting device 550B(i,j) includes unit 103B2(j) and intermediate layer 106B(j) (see FIGS. 6A, 7, and 21B).

[0460] Unit 103B2(j) comprises a region sandwiched between electrode 552B(j) and unit 103B(j).

[0461] The intermediate layer 106B(j) includes a region sandwiched between the unit 103B2(j) and the unit 103B(j). The intermediate layer 106B(j) includes a second material having hole transport properties and a second material having electron accepting properties. The intermediate layer 106B(j) has a 1×10 ２ Ω・cm or more 1×10 ８ It has an electrical resistivity of Ω·cm or less.

[0462] <<Configuration 2 of Light-Emitting Device 550G(i,j)>> The light-emitting device 550G(i,j) includes a unit 103G2(j) and an intermediate layer 106G(j), and the unit 103G2(j) includes a region sandwiched between the electrode 552G(j) and the unit 103G(j).

[0463] Intermediate layer 106G(j) comprises a region sandwiched between unit 103G2(j) and unit 103G(j). Intermediate layer 106G(j) includes a material having a second hole-transporting property and a substance having a second electron-accepting property, and intermediate layer 106G(j) comprises gap 106S(j) between intermediate layer 106G(j) and intermediate layer 106B(j).

[0464] The partition wall 528 overlaps the gap 106S(j) between the opening 528B(i,j) and the opening 528G(i,j).

[0465] <<Configuration 3 of Light-Emitting Device 550B(i,j)>> The configuration of light-emitting device 550B(i,j) is shown in Table 1. The structural formulas of materials used in the light-emitting device described in this example are shown below. Note that in the tables of this example, subscripts and superscripts are written in standard size for convenience. For example, subscripts used for abbreviations and superscripts used for units are written in standard size in the tables. These descriptions in the tables can be interpreted in accordance with the descriptions in the specification.

[0466]

[0467]

[0468]

[0469] The reflective film REFB includes an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC).

[0470] The electrode 551B(i,j) includes silicon-doped indium tin oxide (abbreviated as ITSO) and has a thickness of 85 nm.

[0471] [Configuration of Layer 104B(j)] The layer 104B(j) contains N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and molybdenum oxide (abbreviation: MoOx) in a weight ratio of BBABnf:MoOx = 1:0.5, and has a thickness of 10 nm.

[0472] BBABnf is an aromatic amine compound having hole transport properties, and MoOx is a transition metal oxide having electron accepting properties.

[0473] [Configuration of Unit 103B2(j)] Unit 103B2(j) includes a layer 112B2(j)a, a layer 112B2(j)b, a layer 111B2(j), a layer 113B2(j)a, and a layer 113B2(j)b.

[0474] Layer 112B2(j)a includes BBABnf and has a thickness of 10 nm.

[0475] The layer 112B2(j)b contains 3,3′-(naphthalene-1,4-diyl)bis(9-phenyl-9H-carbazole) (abbreviation: PCzN2) and has a thickness of 10 nm.

[0476] Layer 111B2(j) contains 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) and 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b′]bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02) in a weight ratio of αN-βNPAnth:3,10PCA2Nbf(IV)-02 = 1:0.015, and has a thickness of 25 nm.

[0477] Layer 113B2(j)a includes 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) and has a thickness of 15 nm.

[0478] Layer 113B2(j)b contains 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 5 nm.

[0479] [Configuration of Layer 105B2(j)] The layer 105B2(j) contains NBPhen and Ag in a weight ratio of NBPhen:Ag=1:0.1, and has a thickness of 5 nm.

[0480] [Configuration of Layer 106B(j)] The intermediate layer 106B(j) includes a layer 106B1(j) and a layer 106B2(j).

[0481] Layer 106B1(j) includes copper phthalocyanine (abbreviated as CuPc) and has a thickness of 2 nm.

[0482] The layer 106B2 contains BBABnf and MoOx in a weight ratio of BBABnf:MoOx=1:0.5 and has a thickness of 10 nm.

[0483] [Configuration of Unit 103B(j)] The unit 103B(j) includes a layer 112B(j), a layer 111B(j), a layer 113B(j)a, and a layer 113B(j)b.

[0484] Layer 112B(j) includes N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and has a thickness of 7.5 nm.

[0485] Layer 111B(j) is a layer containing 8-(1,1′-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-(2-naphthyl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: βNCCP), and bis[2 [2-(5-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)(4dppy)) in a weight ratio of 8BP-4mDBtPBfpm:βNCCP:Ir(ppy)(4dppy) = 0.5:0.5:0.1, and having a thickness of 40 nm.

[0486] Layer 113B(j)a includes 9,9'-(pyrimidine-4,6-diyldi-3,1-phenylene)bis(9H-carbazole) (abbreviation: 4,6mCzP2Pm) and has a thickness of 25 nm.

[0487] Layer 113B(j)b includes NBPhen and has a thickness of 10 nm.

[0488] [Configuration of Layer 105B(j)] The layer 105B(j) contains NBPhen and Ag in a weight ratio of NBPhen:Ag=1:0.05, and has a thickness of 5 nm.

[0489] [Configuration of Electrode 552B(j)] The electrode 552B(j) includes an electrode 552B(j)a and an electrode 552B(j)b.

[0490] The electrode 552B(j)a contains Ag and Mg in a weight ratio of Ag:Mg=1:0.1 and has a thickness of 25 nm.

[0491] Electrode 552B(j)b comprises ITO and has a thickness of 70 nm.

[0492] [Configuration of Protective Layer 554B(j)] The protective layer 554B(j) contains aluminum oxide (abbreviated as AlOx) and has a thickness of 60 nm.

[0493] <Display Panel Structure 2> The manufactured display panel also has an insulating film 573A.

[0494] The insulating film 573A contacts the protective layer 554B(j), and the protective layer 554B(j) has a region sandwiched between the insulating film 573A and the electrode 552B(j).

[0495] The insulating film 573A is in contact with the protective layer 554G(j), and the protective layer 554G(j) has a region sandwiched between the insulating film 573A and the electrode 552G(j).

[0496] Layer 104B(j) has a sidewall WL1, layer 104G(j) has a sidewall WL2, sidewall WL2(j) faces sidewall WL1, and sidewall WL2(j) sandwiches a gap 104S(j) with sidewall WL1.

[0497] Sidewall WL1 and sidewall WL2 are in contact with insulating film 573A.

[0498] In this example, a structure of a manufactured display panel according to one embodiment of the present invention will be described with reference to FIGS.

[0499] FIG. 22 is a photograph illustrating the display results of the manufactured display panel.

[0500] <Configuration Example of Display Panel> The display panel described in this embodiment has the specifications summarized in the table below.

[0501]

[0502] The appearance of the fabricated functional panel and the display results are shown in Figure 22. A high-resolution image was displayed.

[0503] ANO: conductive film, CFB: colored layer, CFG: colored layer, CFR: colored layer, C21: capacitance, C22: capacitance, FM: foreign substance, G1: conductive film, G2: conductive film, M21: transistor, N21: node, N22: node, REFB: reflective film, REFG: reflective film, S1g: conductive film, S2g: conductive film, SW21: switch, SW22: switch, SW23: switch, VCOM2: conductive film, WL1: side wall, WL2: side wall, 101: electrode, 102: electrode, 103: unit, 103B: unit, 103B2: unit, 103G: unit, 103G2: unit, 103 R: unit, 103R2: unit, 104: layer, 104B: layer, 104G: layer, 104R: layer, 104S: gap, 105: layer, 105 S: gap, 105B: layer, 105B2: layer, 105G: layer, 105G2: layer, 105R: layer, 105R2: layer, 106: intermediate layer, 106 ( 1): layer, 106(2): layer, 106B: intermediate layer, 106B1: layer, 106B2: layer, 106G: intermediate layer, 106R: intermediate layer, 106S: Gap, 111: layer, 111B: layer, 111B2: layer, 111G: layer, 111R: layer, 112: layer, 112B: layer, 112B2: layer, 113: layer, 113B: layer, 113B2: layer, 150: light-emitting device, 231: display region, 501C: insulating film, 501D: insulating film, 504: conductive film, 506: insulating film, 508: semiconductor film, 508A: region, 508B: region, 508C: region, 510: substrate, 512A: conductive film, 512B: conductive film, 516: insulating film, 516A: insulating film, 516B: insulating film, 518: insulating film, 519B: terminal, 520: functional layer, 520T: region, 524: conductive film, 528: partition wall, 528B: opening, 528G: opening, 550B: light-emitting device, 550G: light-emitting device, 550R: Light-emitting device, 551B: electrode, 551G: electrode, 551R: electrode, 551S: gap, 552: electrode, 552B: electrode, 552G: electrode, 552R: electrode, 573: insulating film, 554: protective layer, 554B: protective layer, 554G: protective layer, 554R: protective layer, 554S: gap, 554C: region, 573A: insulating film, 573B: insulating film, 591B: opening, 591G: opening, 700: display panel, 705: insulating film, 770: substrate, 1032: unit, 1052: layer, 5200B: information processing device, 5210: arithmetic unit, 5220: input / output device, 5230: display unit,5240: input unit, 5250: detection unit, 5290: communication unit,

Claims

1. a first light emitting device; a second light emitting device; and A bulkhead, A first protective layer; and a second protective layer; the first light emitting device comprises a first electrode, a second electrode and a first layer; the first layer comprises a region sandwiched between the second electrode and the first electrode; the first layer includes a material having a first hole transporting property and a substance having a first electron accepting property, The first layer is 1×10 ２ Ω・cm or more 1×10 ８ With electrical resistivity of Ω cm or less, the first protective layer is in contact with the second electrode; the second electrode is sandwiched between the first protective layer and the first electrode; the second light emitting device comprises a third electrode, a fourth electrode and a second layer; the second layer includes a region sandwiched between the fourth electrode and the third electrode; the second layer includes the first material having a hole transport property and the first substance having an electron accepting property, the second layer has a first gap between it and the first layer; the second protective layer has a second gap between it and the first protective layer; the second gap overlaps the first gap; the second protective layer is in contact with the fourth electrode; the fourth electrode is sandwiched between the second protective layer and the third electrode; the partition includes a first opening and a second opening; the first opening overlaps the first electrode; the second opening overlaps the third electrode; The partition overlaps the first gap and the second gap between the first opening and the second opening.

2. a first light emitting device; a second light emitting device; and A bulkhead, A first protective layer; and a second protective layer; the first light emitting device comprises a first electrode, a second electrode, a first unit and a first layer; the second electrode overlaps the first electrode; the first unit includes a region sandwiched between the second electrode and the first electrode; the first layer includes a region sandwiched between the first unit and the first electrode; the first layer includes a material having a first hole transporting property and a substance having a first electron accepting property, The first layer is 1×10 ２ Ω・cm or more 1×10 ８ With electrical resistivity of Ω cm or less, the first protective layer is in contact with the second electrode; the second electrode is sandwiched between the first protective layer and the first electrode; the second light emitting device comprises a third electrode, a fourth electrode, a second unit and a second layer; the fourth electrode overlaps the third electrode; the second unit includes a region sandwiched between the fourth electrode and the third electrode, the second layer includes a region sandwiched between the second unit and the third electrode; the second layer includes the first material having a hole transport property and the first substance having an electron accepting property, the second layer has a first gap between it and the first layer; the second protective layer has a second gap between it and the first protective layer; the second gap overlaps the first gap; the second protective layer is in contact with the fourth electrode; the fourth electrode is sandwiched between the second protective layer and the third electrode; the partition includes a first opening and a second opening; the first opening overlaps the first electrode; the second opening overlaps the third electrode; The partition overlaps the first gap and the second gap between the first opening and the second opening.

3. the first light emitting device comprises a third unit and a first intermediate layer; the third unit includes a region sandwiched between the second electrode and the first unit; the first intermediate layer comprises a region sandwiched between the third unit and the first unit; the first intermediate layer includes a material having a second hole transport property and a substance having a second electron accepting property; The first intermediate layer is 1×10 ２ Ω・cm or more 1×10 ８ With electrical resistivity of Ω cm or less, the second light-emitting device comprises a fourth unit and a second intermediate layer; the fourth unit includes a region sandwiched between the fourth electrode and the second unit; the second intermediate layer comprises a region sandwiched between the fourth unit and the second unit; the second intermediate layer contains the second material having hole transport properties and the second substance having electron accepting properties, the second intermediate layer has a third gap between it and the first intermediate layer; The display panel according to claim 2 , wherein the partition overlaps with the third gap between the first opening and the second opening.

4. the first material having a hole transport property is an aromatic amine compound or an organic compound having a π-electron-rich heteroaromatic ring; 4. The display panel according to claim 1, wherein the first substance having an electron accepting property is an organic compound containing fluorine or a cyano group, or a transition metal oxide.

5. the first protective layer comprises aluminum oxide; The display panel according to claim 1 , wherein the second protective layer contains aluminum oxide.

6. A first insulating film is provided, the first insulating film is in contact with the first protective layer; the first protective layer has a region sandwiched between the first insulating film and the second electrode, the first insulating film is in contact with the second protective layer; the second protective layer includes a region sandwiched between the first insulating film and the fourth electrode, the first layer comprising a first sidewall; the second layer comprises a second sidewall; the second side wall faces the first side wall, the second sidewall sandwiches the first gap between itself and the first sidewall, 6. The display panel according to claim 1, wherein the first sidewall and the second sidewall are in contact with the first insulating film.

7. A second insulating film is provided, 7. The display panel according to claim 1, wherein the second insulating film fills the first gap.

8. An information processing device comprising: one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a gaze input device, and a posture detection device; and the display panel according to any one of claims 1 to 7.

9. In a first step, a first electrode and a second electrode are formed; In a second step, a partition is formed between the first electrode and the second electrode; In a third step, a first layer is formed on the first electrode and the second electrode; In a fourth step, a first unit is formed on the first layer; In a fifth step, a second layer including a first organic compound and a first metal is formed on the first unit by a co-evaporation method; In a sixth step, an intermediate layer is formed on the second layer; In a seventh step, a second unit is formed on the intermediate layer; In an eighth step, a third layer including a second organic compound and a second metal is formed on the second unit by a co-evaporation method; In a ninth step, a third electrode is formed on the third layer; In a tenth step, a first protective layer is formed on the third electrode; In an eleventh step, the first protective layer on the partition wall is removed by a photoetching method, and the second protective layer and the third protective layer are processed into a predetermined shape; In a twelfth step, the first layer, the first unit, the second layer, the intermediate layer, the second unit, the third layer and the third electrode on the partition are removed by using the second protective layer and the third protective layer as a hard mask; In a thirteenth step, an insulating film is formed on the first electrode and the second electrode in contact with the partition wall, thereby simultaneously covering the first light emitting device and the second light emitting device.

10. In claim 9, the insulating film is a laminated film including a first film and a second film on the first film, The method for manufacturing a display panel, wherein the first film is denser than the second film.