Display apparatus

Abstract

Provided is a display apparatus capable of sufficiently suppressing film detachment. This display apparatus is provided with: first and second insulating layers; a first light-emitting device positioned on the first insulating layer; a second light-emitting device positioned on the second insulating layer; and a third insulating layer having a region which covers a part of a lateral surface of the first light-emitting device, a region which covers a part of the lower surface of the first insulating layer, a region which covers a part of the lower surface of the second insulating layer, and a region which covers a part of a lateral surface of the second light-emitting device. The first light-emitting device has a tandem structure, and the second light-emitting device has a single structure.

Description

display device

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. In addition to display devices, the technical field of one embodiment of the present invention disclosed in this specification and the like can include semiconductor devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, and manufacturing methods thereof. Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] In recent years, electronic devices such as smartphones, tablet devices, and notebook computers have become increasingly high-resolution, and as a result, display devices mounted on such electronic devices are required to have higher definition. Light-emitting devices using electroluminescence (EL) elements are examples of display devices that can achieve higher definition. In light-emitting devices formed through processes such as peeling a support substrate from a workpiece, a structure has been proposed in which an adhesive layer is filled into openings in an insulating layer to prevent film peeling and improve manufacturing yield (see Patent Document 1).

[0004] JP 2017-174811 A

[0005] In the aforementioned Patent Document 1, when examining the location of weak adhesion that causes film peeling during the process of peeling the support substrate from the workpiece, it is pointed out that it is the interface between the EL layer and the conductive layer above it. Based on this finding, Patent Document 1 fills the opening in the insulating layer with an adhesive layer. However, this structure was sometimes insufficient to prevent film peeling.

[0006] The present invention has been made in view of the above description, and an object of the present invention is to provide a display device or the like having a structure in which film peeling is sufficiently suppressed.

[0007] Furthermore, Patent Document 1 proposes a display device using a white light-emitting element and a colored layer (color filter), but such a display device can sometimes cause crosstalk and have a narrow viewing angle.

[0008] The present invention has been made in view of the above description, and an object of the present invention is to provide a display device or the like in which crosstalk is suppressed and which has a wide viewing angle.

[0009] It should be noted that these problems are considered to be independent of each other, and one embodiment of the present invention is only required to solve any one of these problems, and does not necessarily have to solve all of them. Furthermore, the description of these problems does not preclude the existence of other problems, and other problems can be extracted from the description of the specification, drawings, and claims, which are the present specification, etc.

[0010] In view of the above problems, a display device according to one embodiment of the present invention includes an insulating layer having a region covering a light-emitting device in order to sufficiently suppress film peeling from a light-emitting device processed using a lithography process. Note that the insulating layer having a region covering the light-emitting device means that at least the side surfaces of an organic layer included in the light-emitting device are covered with the insulating layer, and the insulating layer does not need to be in contact with the organic layer. However, the insulating layer having a region covering the light-emitting device preferably has a region in contact with an insulating layer located on a surface where the light-emitting device is to be formed. If the contact region can be located on the lower surface (the lower surface may be referred to as the back surface) of the insulating layer located on the surface where the light-emitting device is to be formed, film peeling from the light-emitting device can be effectively suppressed.

[0011] Furthermore, the light-emitting device included in the display device of one embodiment of the present invention has at least a light-emitting layer processed using a lithography process. Through this lithography process, red, green, and blue light-emitting devices can be separately fabricated, and leakage current between adjacent light-emitting devices can be suppressed. This prevents crosstalk due to unintended light emission, enabling a display device with extremely high contrast. Furthermore, the use of a light-emitting layer processed using a lithography process allows a display device with a wide viewing angle to be provided.

[0012] Specifically, one embodiment of the invention is a display device having a first insulating layer and a second insulating layer, a first light-emitting device located on the first insulating layer, a second light-emitting device located on the second insulating layer, and a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region covering a portion of a lower surface of the first insulating layer, a region covering a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a tandem structure and the second light-emitting device has a single structure.

[0013] Another aspect of the present invention is a display device comprising a first insulating layer and a second insulating layer, a first light-emitting device located on the first insulating layer, a second light-emitting device located on the second insulating layer, and a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a portion of a lower surface of the first insulating layer, a region in contact with a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a tandem structure and the second light-emitting device has a single structure.

[0014] Another aspect of the present invention is a display device comprising: a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protrusion overlapping the recess; a first light-emitting device located on the first insulating layer; a second light-emitting device located on the second insulating layer; and a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region covering a lower surface of the first protrusion, a region covering a lower surface of the second protrusion, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a tandem structure and the second light-emitting device has a single structure.

[0015] Another aspect of the present invention is a display device comprising: a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protrusion overlapping the recess; a first light-emitting device located on the first insulating layer; a second light-emitting device located on the second insulating layer; and a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a lower surface of the first protrusion, a region in contact with a lower surface of the second protrusion, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a tandem structure and the second light-emitting device has a single structure.

[0016] Another aspect of the present invention is a display device comprising a first insulating layer and a second insulating layer, a first light-emitting device located on the first insulating layer, a second light-emitting device located on the second insulating layer, and a third insulating layer having an area covering a portion of the side surface of the first light-emitting device, an area covering a portion of the lower surface of the first insulating layer, an area covering a portion of the lower surface of the second insulating layer, and an area covering a portion of the side surface of the second light-emitting device, wherein the first light-emitting device has a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and the second light-emitting device has a third light-emitting unit.

[0017] Another aspect of the present invention is a display device comprising a first insulating layer and a second insulating layer, a first light-emitting device located on the first insulating layer, a second light-emitting device located on the second insulating layer, and a third insulating layer having a region covering a portion of the side surface of the first light-emitting device, a region in contact with a portion of the lower surface of the first insulating layer, a region in contact with a portion of the lower surface of the second insulating layer, and a region covering a portion of the side surface of the second light-emitting device, wherein the first light-emitting device has a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and the second light-emitting device has a third light-emitting unit.

[0018] Another aspect of the present invention is a display device comprising: a first insulating layer having a recess; a second insulating layer positioned on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer positioned on the first insulating layer and having a second protrusion overlapping the recess; a first light-emitting device positioned on the first insulating layer; a second light-emitting device positioned on the second insulating layer; and a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region covering a lower surface of the first protrusion, a region covering a lower surface of the second protrusion, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and the second light-emitting device has a third light-emitting unit.

[0019] Another aspect of the present invention is a display device comprising: a first insulating layer having a recess; a second insulating layer positioned on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer positioned on the first insulating layer and having a second protrusion overlapping the recess; a first light-emitting device positioned on the first insulating layer; a second light-emitting device positioned on the second insulating layer; and a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a lower surface of the first protrusion, a region in contact with a lower surface of the second protrusion, and a region covering a portion of a side surface of the second light-emitting device, wherein the first light-emitting device has a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer, and the second light-emitting device has a third light-emitting unit.

[0020] In another embodiment of the present invention, the charge generating layer preferably contains lithium.

[0021] In another aspect of the present invention, it is preferable that the first to third insulating layers each contain an inorganic material.

[0022] In another embodiment of the present invention, it is preferable that the first insulating layer contains an organic material, and the second to fourth insulating layers each contain an inorganic material.

[0023] In another aspect of the present invention, the first to fourth insulating layers each preferably contain an inorganic material.

[0024] According to one embodiment of the present invention, a display device in which film peeling is sufficiently suppressed can be provided. Further, according to one embodiment of the present invention, a display device in which crosstalk is suppressed can be provided. Further, according to one embodiment of the present invention, a display device with a wide viewing angle can be provided.

[0025] These effects are considered to be independent of each other, and one embodiment of the present invention may achieve any one of these effects, but need not achieve all of them. Furthermore, the description of these effects does not preclude the existence of other effects, and other effects can be extracted from the description of the specification, drawings, and claims, which are the present specification, etc.

[0026] FIGS. 1A to 1F are diagrams showing a configuration example of a light-emitting device. FIGS. 2A and 2B are diagrams showing a configuration example of a light-emitting device. FIGS. 3A and 3B are diagrams showing a configuration example of a light-emitting device. FIGS. 4A to 4F are diagrams showing a configuration example of a light-emitting device. FIGS. 5A and 5B are diagrams showing a configuration example of a light-emitting device. FIGS. 6A and 6B are diagrams showing a configuration example of a display device. FIG. 7 is a diagram showing a configuration example of a display device. FIGS. 8A and 8B are diagrams showing a configuration example of a display device. FIG. 9 is a diagram showing a configuration example of a display device. FIGS. 10A to 10D are diagrams showing a manufacturing process example of a display device. FIGS. 11A to 11D are diagrams showing a manufacturing process example of a display device. FIGS. 12A and 12B are diagrams showing a manufacturing process example of a display device. FIGS. 13A to 13C are diagrams showing a manufacturing process example of a display device. FIGS. 14A to 14D are diagrams showing a manufacturing process example of a light-emitting device. FIGS. 15A and 15B are diagrams showing a configuration example of a light-emitting device. FIGS. 16A and 16B are diagrams showing a configuration example of a light-emitting device. FIGS. 17A and 17B are diagrams showing configuration examples of a light-emitting device. FIGS. 18A to 18E are diagrams showing configuration examples of a display device. FIGS. 19A to 19G are diagrams showing layouts of a display device. FIGS. 20A to 20K are diagrams showing layouts of a display device. FIGS. 21A and 21B are diagrams showing configuration examples of a display device. FIG. 22 is a diagram showing a configuration example of a display device. FIG. 23 is a diagram showing a configuration example of a display device. FIG. 24 is a diagram showing a configuration example of a display device. FIG. 25 is a diagram showing a configuration example of a display device. FIG. 26 is a diagram showing a configuration example of a display device. FIG. 27 is a diagram showing a configuration example of a display device. FIG. 28 is a diagram showing a configuration example of a display device. FIG. 29A is a diagram showing a configuration example of a display device, and FIGS. 29B and 29C are diagrams showing configuration examples of transistors. FIGS. 30A to 30D are diagrams showing configuration examples of electronic devices. FIGS. 31A to 31F are diagrams showing configuration examples of electronic devices. FIGS. 32A to 32G are diagrams showing configuration examples of electronic devices.

[0027] In this specification and the like, a light-emitting device has a pair of electrodes and a functional layer located between the pair of electrodes. A layer using an organic compound is stacked between the pair of electrodes as the functional layer. In this specification and the like, the functional layer located between the pair of electrodes may be referred to as an organic layer or a laminate, and the organic layer of a light-emitting device refers to a state in which layers using an organic compound are stacked. The light-emitting device may also be referred to as a light-emitting element or an EL element.

[0028] Functional layers include a light-emitting layer, a carrier injection layer (typically a hole injection layer and an electron injection layer), a carrier transport layer (typically a hole transport layer and an electron transport layer), and a carrier block layer (typically a hole blocking layer and an electron blocking layer). The light-emitting layer refers to a layer containing a light-emitting material (sometimes referred to as a light-emitting substance). A layer using an organic compound is preferably used as the light-emitting layer, and a light-emitting layer using an organic compound is sometimes referred to as an organic light-emitting layer, and a light-emitting device having an organic light-emitting layer is sometimes referred to as an organic light-emitting device. The hole injection layer refers to a layer containing a substance with high hole injection properties. The electron injection layer refers to a layer containing a substance with high electron injection properties. The hole transport layer refers to a layer containing a substance with high hole transport properties. The electron transport layer refers to a layer containing a substance with high electron transport properties. The hole blocking layer refers to a layer containing a substance with high hole blocking properties. The electron blocking layer refers to a layer containing a substance with high electron blocking properties.

[0029] Of the functional layers described above, a layer using an inorganic compound (hereinafter referred to as an inorganic compound layer) can be applied to the carrier injection layer, the carrier block layer, or the like.

[0030] In this specification and the like, a light-emitting device may have at least a light-emitting layer as an organic layer, and an organic layer having a light-emitting layer may be referred to as an EL layer. A light-emitting device may have two or more light-emitting layers.

[0031] Depending on the light-emitting material contained in the light-emitting layer, red, green, and blue light can be emitted. In this specification and the like, a light-emitting device capable of emitting red, green, or blue light may be referred to as a red-light-emitting device, a green-light-emitting device, or a blue-light-emitting device. In this specification and the like, a light-emitting region in a planar view corresponding to red, green, or blue light emission may be referred to as a sub-pixel. Although a combination of three sub-pixels such as red, green, and blue sub-pixels described above may be referred to as a pixel, a pixel may also be a combination of four or more sub-pixels by adding white or the like to the above.

[0032] In this specification and the like, one and the other of a pair of electrodes in a light-emitting device are referred to by many names. For example, one of the pair of electrodes may be referred to as an anode and the other as a cathode. When expressing the electrodes according to the arrangement of the electrodes in a light-emitting device, one of the pair of electrodes arranged below the light-emitting layer may be referred to as a lower electrode, and the other of the pair of electrodes arranged above the light-emitting layer may be referred to as an upper electrode. Furthermore, when expressing the electrodes based on the light extraction direction of the light-emitting device, one of the pair of electrodes located on the light extraction side may be referred to as an extraction electrode, and the other as a counter electrode. Note that the terms one and the other are merely examples and can be interpreted interchangeably.

[0033] In this specification, a light-emitting device can have a tandem structure or a single structure. A tandem structure has a charge-generating layer and two or more light-emitting layers stacked between a pair of electrodes with the charge-generating layer interposed therebetween. A laminate having a light-emitting layer may be referred to as a light-emitting unit, and the light-emitting unit does not include a pair of electrodes or a charge-generating layer. In other words, a tandem structure has a structure in which two or more light-emitting units are stacked with a charge-generating layer interposed therebetween. When two light-emitting units are referred to as a first light-emitting unit and a second light-emitting unit, in a tandem structure, the first light-emitting unit may have the same laminate as the second light-emitting unit or may have a different laminate. Furthermore, in a tandem structure, one light-emitting unit may have one light-emitting layer or two or more light-emitting layers. When two or more light-emitting layers are included, the light-emitting layers may or may not be adjacent to each other. Furthermore, a tandem structure may have two or more charge-generating layers, in which case it has three or more light-emitting units.

[0034] The charge generation layer refers to a layer that has the function of injecting holes into one light-emitting unit and the function of injecting electrons into the other light-emitting unit when a voltage is applied between a pair of electrodes. Placing a charge generation layer between stacked light-emitting units can suppress an increase in driving voltage in a tandem structure. Because the charge generation layer is located between the light-emitting units, it is sometimes referred to as an intermediate layer. If the charge generation layer is thin, it may not be visible as a layer, so it is sometimes referred to as a charge generation region or intermediate region.

[0035] The single structure is a structure having one light-emitting unit between a pair of electrodes without a charge generating layer. One light-emitting unit may have one light-emitting layer or two or more light-emitting layers. When two or more light-emitting layers are present, the light-emitting layers may or may not be in contact with each other.

[0036] In this specification, etc., a light-emitting device formed using a metal mask or FMM (fine metal mask or high-resolution metal mask) may be referred to as a device having an MM (metal mask) structure. Also, in this specification, etc., a light-emitting device formed without using a metal mask or FMM may be referred to as a device having an MML (metal maskless) structure.

[0037] In this specification and the like, a structure in which each light-emitting layer is separately formed may be referred to as an SBS (Side By Side) structure.

[0038] In this specification and the like, a display device having a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) attached to a substrate, or a display device having an IC mounted on the substrate by a chip-on-glass (COG) method or the like, may be referred to as a display module. A display module is one aspect of a display device.

[0039] Next, the embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0040] Embodiment Mode 1 In this embodiment mode, a display device having an insulating layer or the like provided to prevent film peeling of a light-emitting device or the like will be described.

[0041] As shown in FIG. 1A , a display device according to one embodiment of the present invention includes a light-emitting device 110 processed using a lithography process. The light-emitting device 110 includes a lower electrode 111, an organic layer 112, and an upper electrode 113. In this display device, an MML structure is applied to the light-emitting device 110. In the light-emitting device 110 employing the MML structure, the side surfaces of the organic layer 112 are perpendicular or approximately perpendicular to the surface on which the light is to be formed, specifically, the upper surface of the lower electrode 111. Perpendicular or approximately perpendicular refers to an edge of the organic layer 112 forming an angle of 80° or more and 100° or less with respect to the surface on which the light is to be formed. The organic layer 112 having such a side surface can reduce the distance between adjacent light-emitting devices, specifically, the distance between adjacent organic layers, to less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. In other words, the MML structure can increase the aperture ratio of the display device compared to a display device formed using a metal mask with low alignment accuracy. A display device with a high aperture ratio can produce high brightness even when the current density of the light-emitting device is reduced, thereby improving the reliability of the light-emitting device.

[0042] Furthermore, in a display device according to one embodiment of the present invention, an insulating layer 125 having a region covering the light-emitting device 110 is provided as shown in FIG. 1A to sufficiently suppress film peeling of the light-emitting device 110. Film peeling of the light-emitting device 110 includes peeling of the organic layer 112 from the lower electrode 111. To sufficiently suppress film peeling, the insulating layer 125 may cover part of the side surface of the light-emitting device 110, that is, part of the side surface of the organic layer 112. Although FIG. 1A shows the insulating layer 125 in contact with the side surface of the organic layer 112, this is not necessarily the case. To sufficiently suppress film peeling, the insulating layer 125 may have a region in contact with, for example, the lower electrode 111 or the insulating layer 106 located on the surface where the light-emitting device 110 is to be formed. 1A shows a configuration in which the side surface of the lower electrode 111 exposed from the organic layer 112, the side surface of the insulating layer 106, and a portion of the lower surface of the insulating layer 106 (the lower surface may be referred to as the back surface) are in contact with the insulating layer 125, but by having a region in which a portion of the upper surface, the side surface, a portion of the side surface, or a portion of the lower surface of the insulating layer 106 is in contact with the insulating layer 125, it is possible to sufficiently suppress film peeling of the light-emitting device 110. As the area in which the insulating layer 125 is in contact with the insulating layer 106 etc. becomes larger, film peeling of the light-emitting device 110 can be effectively suppressed.

[0043] 1A shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but the edge of the organic layer 112 may be set back from the edge of the lower electrode 111. Also, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0044] 2A shows a light-emitting device 110 as a modification of Fig. 1A in which the end of the organic layer 112 is recessed from the end of the lower electrode 111. Also, Fig. 2B shows a light-emitting device 110 as a modification of Fig. 1A in which the end of the organic layer 112 extends beyond the end of the lower electrode 111. In Fig. 2A and Fig. 2B as well, the insulating layer 125 can suppress film peeling of the light-emitting device 110.

[0045] Here, examples of materials and methods for forming the insulating layer 125 will be described.

[0046] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include metal oxide films, silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. Metal oxide films will be described later.

[0047] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0048] The insulating layer 125 preferably has a function as a protective layer against at least one of water and oxygen, a function of suppressing diffusion of at least one of water and oxygen, and a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0049] Examples of a method for forming the insulating layer 125 include a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, and an atomic layer deposition (ALD) method. The insulating layer 125 is preferably formed by an ALD method, which has good coverage.

[0050] The insulating layer 125 is preferably an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method, because pinholes are reduced. The insulating layer 125 may have a stacked structure of a film formed by an ALD method and a film formed by a sputtering method. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by an ALD method and a silicon nitride film formed by a sputtering method.

[0051] By increasing the substrate temperature during deposition of the insulating layer 125, it is possible to form an insulating layer 125 that has a low impurity concentration and a high barrier property against at least one of water and oxygen, even if the insulating layer 125 is thin. Therefore, the substrate temperature is preferably 60°C or higher, more preferably 80°C or higher, more preferably 100°C or higher, and more preferably 120°C or higher. On the other hand, since the insulating layer 125 is formed after the organic layer 112 is formed, it is preferably formed at a temperature lower than the heat-resistant temperature of the organic layer 112. Therefore, the substrate temperature is preferably 200°C or lower, more preferably 180°C or lower, more preferably 160°C or lower, more preferably 150°C or lower, and more preferably 140°C or lower.

[0052] Temperatures used as indicators of heat resistance temperature include, for example, a glass transition point, a softening point, a melting point, a thermal decomposition temperature, a 5% weight loss temperature, etc. The heat resistance temperature of the organic layer 112 can be any of these temperatures, preferably the lowest temperature among them.

[0053] The thickness of the insulating layer 125 is preferably, for example, 3 nm to 200 nm, 5 nm to 150 nm, 10 nm to 100 nm, or 10 nm to 50 nm.

[0054] When the insulating layer 125 is positioned on the lower surface of the insulating layer 106, film peeling can be effectively suppressed. Therefore, a configuration example in which the lower surface of the insulating layer 106 is exposed when the insulating layer 125 is formed is shown. For example, as shown in FIG. 1B , by configuring the insulating layer 106 to have a protruding portion 107, the insulating layer 125 can be formed at least on the lower surface of the protruding portion 107. Note that the protruding portion 107 is a portion of the insulating layer 106 that protrudes from the insulating layer 105, which is the surface on which the insulating layer 106 is to be formed. As shown in FIG. 1B , the protruding portion 107 can be obtained by providing a recess 103 in the insulating layer 105. The recess 103 is a portion whose upper surface is located lower than the upper surface of the insulating layer 105, and the bottom surface of the recess 103 is lower than the upper surface of the insulating layer 105. The so-called side surface extending from the upper surface of the insulating layer 105 toward the bottom surface of the recess 103 may be inclined. The protruding portion 107 is a portion that protrudes from the upper end of the insulating layer 105 in a direction along the formation surface of the insulating layer 106, at a position that defines the recess 103. The direction along the formation surface includes a deviation from the formation surface that is greater than 0° and equal to or less than 20°. In this configuration, the insulating layer 125 can contact at least the lower surface of the protruding portion 107.

[0055] Here, examples of materials and methods for forming the insulating layer 105 and the insulating layer 106 will be described.

[0056] The insulating layer 105 may be an insulating layer containing an inorganic material or an organic material. As the organic material, a photosensitive organic resin is preferably used, and for example, a photosensitive resin composition containing an acrylic resin may be used. Note that the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0057] The organic material that can be used for the insulating layer 105 is not limited to the above. For example, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used for the insulating layer 105. Furthermore, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin can be used for the insulating layer 105. Furthermore, photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0058] The insulating layer 105 is preferably formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating. In particular, the insulating layer 105 is preferably formed by spin coating.

[0059] Inorganic materials that can be used for the insulating layer 105 include an insulating oxide film, an insulating nitride film, an insulating oxynitride film, and an insulating nitride film. The inorganic materials that can be used for the insulating layer 105 are not limited to the above. For example, silicon oxide, which has good step coverage and is formed by reacting tetraethyl-ortho-silicate (TEOS) or silane with oxygen or nitrous oxide, can be used. The insulating layer 105 can be formed by methods such as thermal CVD, plasma CVD, atmospheric pressure CVD, or sputtering. Alternatively, silicon oxide formed by low temperature oxidation (LTO) can be used for the insulating layer 105. TEOS is preferable because it is easy to form the recesses 103.

[0060] The insulating layer 106 can be, for example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, the insulating layer 106 preferably includes a nitride insulating film or a nitride oxide insulating film, and more preferably includes a nitride insulating film. The insulating layer 106 may be formed using a single layer of the above-mentioned material or a stack of the above-mentioned materials.

[0061] Insulating layer 106 is located on insulating layer 105, and protruding portion 107 of insulating layer 106 is a portion that protrudes from the upper end of insulating layer 105, which defines recess 103. In other words, protruding portion 107 is located so as to overlap recess 103. Such protruding portion 107 may have a length of 50 nm to 500 nm, preferably 80 nm to 300 nm, from the upper end of insulating layer 105, which defines the recess, in a cross-sectional view.

[0062] 1B , insulating layer 125 also has an area in contact with insulating layer 105. Insulating layer 105 having recess 103 can widen the area in which insulating layer 125 contacts insulating layer 105. From this perspective, film peeling of light-emitting device 110 can be effectively suppressed.

[0063] 1B, insulating layer 105 having recess 103 is in contact with insulating layer 125, which sufficiently suppresses film peeling of light-emitting device 110. Therefore, in the configuration shown in FIG. 1B, insulating layer 106 does not need to be provided on insulating layer 105.

[0064] 1B , in order to enhance the effect of suppressing film peeling of the light-emitting device 110, it is preferable that the insulating layer 125 and the insulating layer 106 have high adhesion. Therefore, it is preferable that both the insulating layer 106 and the insulating layer 125 contain inorganic materials. Furthermore, the insulating layer 106 and the insulating layer 125 may contain the same inorganic material.

[0065] 1B , in order to enhance the effect of suppressing film peeling of the light-emitting device 110, it is preferable that the insulating layer 125 and the insulating layer 105 have high adhesion. Therefore, it is preferable that both the insulating layer 105 and the insulating layer 125 contain inorganic materials. Furthermore, the insulating layer 105 and the insulating layer 125 may contain the same inorganic material.

[0066] 1B , it is preferable that the insulating layer 125, the insulating layer 106, and the insulating layer 105 have high adhesion to each other. Therefore, it is preferable that the insulating layer 105, the insulating layer 106, and the insulating layer 125 all contain inorganic materials. Furthermore, the insulating layer 105, the insulating layer 106, and the insulating layer 125 may contain the same inorganic material.

[0067] 1B shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but similar to the light-emitting device 110 shown in Fig. 2A, the edge of the organic layer 112 may be set back from the edge of the lower electrode 111. Also, similar to the light-emitting device 110 shown in Fig. 2A, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0068] 1A and 1B, Figures 1C and 1D show a light-emitting device 110 in which the upper electrode 113 is located on the organic layer 112 via an opening in the insulating layer 125. The other configurations in Figures 1C and 1D are the same as those in Figures 1A and 1B, and therefore description thereof will be omitted. The insulating layer 125 covers at least the side surface of the organic layer 112, and has an area where the insulating layer 125 contacts the insulating layer 106 or the insulating layer 105, thereby effectively suppressing film peeling of the light-emitting device 110.

[0069] 1C shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but the edge of the organic layer 112 may be set back from the edge of the lower electrode 111. Also, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0070] 3A shows a light-emitting device 110 as a modification of Fig. 1C in which the end of the organic layer 112 is recessed from the end of the lower electrode 111. Also, Fig. 3B shows a light-emitting device 110 as a modification of Fig. 1C in which the end of the organic layer 112 extends beyond the end of the lower electrode 111. In Figs. 3A and 3B as well, film peeling of the light-emitting device 110 can be suppressed by the insulating layer 125 or the like.

[0071] 1D shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but similar to the light-emitting device 110 shown in FIG. 3A, the edge of the organic layer 112 may be recessed from the edge of the lower electrode 111. Also, similar to the light-emitting device 110 shown in FIG. 3B, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0072] 1E and 1F show a light-emitting device 110 having a charge generation layer 153, unlike FIGS. 1C and 1D. Other configurations in FIGS. 1E and 1F are similar to those in FIGS. 1A, 1B, 1C, and 1D, and therefore will not be described further. The insulating layer 125 covers at least the side surfaces of the organic layer 112, and the insulating layer 125 has an area in contact with the insulating layer 106 or the insulating layer 105, thereby effectively preventing film peeling of the light-emitting device 110. Furthermore, although the charge generation layer 153 may have higher conductivity than the organic layer, the insulating layer 125 can prevent the charge generation layer 153 from electrically connecting to the lower electrode 111 or the upper electrode 113.

[0073] 1E shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but similar to the light-emitting device 110 shown in Fig. 3A, the edge of the organic layer 112 may be recessed from the edge of the lower electrode 111. Also, similar to the light-emitting device 110 shown in Fig. 3B, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0074] 1F shows a configuration in which the edge of the organic layer 112 is aligned with the edge of the lower electrode 111, but similar to the light-emitting device 110 shown in FIG. 3A, the edge of the organic layer 112 may be recessed from the edge of the lower electrode 111. Also, similar to the light-emitting device 110 shown in FIG. 3B, the edge of the organic layer 112 may extend beyond the edge of the lower electrode 111.

[0075] 4A to 4F , a light-emitting device 110 having an insulating layer 116 with a region overlapping an end of the lower electrode 111 will be described. After forming the lower electrode 111, the insulating layer 116 is formed, and an opening is formed in the insulating layer 116 so that the top surface of the lower electrode 111 is exposed. Such an insulating layer 116 may also be referred to as a partition wall, a bank, or an embankment.

[0076] Here, examples of materials and methods for forming the insulating layer 116 will be described.

[0077] The insulating layer 116 may be an insulating layer containing an inorganic material or an organic material. The organic material is preferably a photosensitive organic resin, such as a photosensitive resin composition containing an acrylic resin. The term "acrylic resin" does not necessarily refer to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0078] The organic material that can be used for the insulating layer 116 is not limited to the above. For example, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins can be used for the insulating layer 116. Furthermore, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin can be used for the insulating layer 116. Furthermore, photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0079] The insulating layer 116 is preferably formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating. In particular, the insulating layer 116 is preferably formed by spin coating.

[0080] Examples of inorganic materials that can be used for the insulating layer 116 include an insulating oxide film, an insulating nitride film, an oxynitride insulating film, and an insulating nitride oxide film. The inorganic materials that can be used for the insulating layer 116 are not limited to the above. For example, silicon oxide having good step coverage formed by reacting TEOS, silane, or the like with oxygen, nitrous oxide, or the like can be used. The insulating layer 116 can be formed by a method such as thermal CVD, plasma CVD, atmospheric pressure CVD, or sputtering. Alternatively, silicon oxide formed by a low-temperature oxidation method may be used for the insulating layer 116.

[0081] 4A to 4F, the insulating layer 125 has a region in contact with the insulating layer 106, the insulating layer 105, or the insulating layer 116, whereby film peeling of the light-emitting device 110 can be effectively suppressed.

[0082] 4A to 4F , the configuration is the same as that in Figures 1A to 1F except for the insulating layer 116. In the light-emitting device 110 having the charge generation layer 153 as shown in Figures 4E and 4F , the formation of the insulating layer 116 can prevent the charge generation layer 153 from coming into contact with the lower electrode 111.

[0083] 4A and 4B show a configuration in which the edge of the organic layer 112 overlaps the top surface of the insulating layer 116, but the edge of the organic layer 112 may extend beyond the edge of the insulating layer 116. Fig. 5A shows a light-emitting device 110 in which the edge of the organic layer 112 extends beyond the edge of the insulating layer 116, as a variation of Fig. 4B.

[0084] 4A and 4B show a configuration in which the bottom surface of insulating layer 116 is flush with the bottom surface of insulating layer 106, but insulating layer 116 may also be provided in recess 103. Fig. 5B shows a light-emitting device 110 in which insulating layer 116 is also provided in recess 103, as a modification of Fig. 4B.

[0085] 5A and 5B, the insulating layer 125 and the like can also prevent the light emitting device 110 from peeling off.

[0086] 1A to 5B can be any one of a red light-emitting device, a green light-emitting device, and a blue light-emitting device through a lithography process. That is, in a display device according to one embodiment of the present invention, an SBS structure can be applied to the light-emitting device 110, thereby suppressing crosstalk and providing a display device with a wide viewing angle. The SBS structure is preferable compared to a structure using a white light-emitting element and a colored layer (color filter), because it allows the material of the organic layer to be optimized for each light-emitting device 110 and the stacking order of the organic layers to be optimized for each light-emitting device 110.

[0087] 1A to 5B , the light-emitting device 110 may be fabricated using a metal mask or the like as long as peeling of the film of the light-emitting device 110 can be effectively suppressed. That is, an MM structure may be applied to the light-emitting device 110. An SBS structure may also be applied to a light-emitting device with an MM structure.

[0088] [Display Device 100A] Next, a display device 100A provided with a plurality of light-emitting devices will be described with reference to FIG. 6 and other figures.

[0089] In the display device 100A, the SBS structure is applied to the light-emitting devices. Furthermore, in the display device 100A, the organic layers are optimized for each light-emitting device. Specifically, the display device 100A includes both a single-structure light-emitting device and a tandem-structure light-emitting device. The emission color of the light-emitting device to which the single structure is applied is not particularly limited, and the emission color of the light-emitting device to which the tandem structure is applied is also not particularly limited. The light-emitting device to which the tandem structure is applied may be the light-emitting device with the lowest reliability. For example, if the reliability of the blue light-emitting device is the lowest, the tandem structure may be applied to at least the blue light-emitting device, and the single structure may be applied to either the green light-emitting device or the red light-emitting device. Furthermore, if the reliability of the green light-emitting device is the lowest, the tandem structure may be applied to at least the green light-emitting device, and the single structure may be applied to either the blue light-emitting device or the red light-emitting device.

[0090] The display device 100A shown in Figure 6A is an example in which a red light-emitting device 110R is used as a first light-emitting device, a green light-emitting device 110G is used as a second light-emitting device, and a blue light-emitting device 110B is used as a third light-emitting device, in which a tandem structure is applied to the blue light-emitting device 110B, and a single structure is applied to the red light-emitting device 110R and the green light-emitting device 110G.

[0091] Here, we will explain blue light-emitting devices. When comparing single structures, blue light-emitting devices sometimes have a shorter emission lifetime than red and green light-emitting devices. A short emission lifetime is a factor in low reliability of display devices. Furthermore, a tandem structure can extend the emission lifetime because it can reduce the current required to obtain the same brightness compared to a single structure. Therefore, if a tandem structure is applied to a blue light-emitting device and a single structure is applied to red and green light-emitting devices, the difference in emission lifetime is reduced. Note that if a single structure is applied only to a red light-emitting device and a tandem structure is applied to blue and green light-emitting devices, the difference in emission lifetime can also be reduced.

[0092] 6A , the organic layer 112R of the red light-emitting device 110R, the organic layer 112G of the green light-emitting device 110G, and the organic layer 112B of the blue light-emitting device 110B each have at least light-emitting layers that are individually fabricated using a lithography process. That is, the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B each have an MML structure and an SBS structure, and the effects of the MML structure and the SBS structure can be obtained.

[0093] FIG. 6A shows sub-pixels 11R, 11G, and 11B, which correspond to the light-emitting regions of red light-emitting device 110R, green light-emitting device 110G, and blue light-emitting device 110B, respectively.

[0094] 1D and 5B, etc., is applied to display device 100A to sufficiently suppress film peeling of red light-emitting device 110R, green light-emitting device 110G, and blue light-emitting device 110B. Note that in the present embodiment and the like, when there is no need to distinguish between organic layer 112R, organic layer 112G, and organic layer 112B, the description may be made using organic layer 112, and when there is no need to distinguish between red light-emitting device 110R, green light-emitting device 110G, and blue light-emitting device 110B, the description may be made using light-emitting device 110.

[0095] 6A , the red light-emitting device 110R is located on the insulating layer 106R. The green light-emitting device 110G is located on the insulating layer 106G. The blue light-emitting device 110B is located on the insulating layer 106B. The insulating layers 106R, 106G, and 106B are formed through the same process, and may be collectively referred to as the insulating layer 106. Note that the display device 100A does not necessarily have to include the insulating layer 106.

[0096] The display device 100A shown in Fig. 6A may include an insulating layer 116 that overlaps the end of the lower electrode 111 and functions as a partition, bank, or embankment. Although a configuration including the insulating layer 116 is not shown in Fig. 6, the insulating layer 116 may be combined with a blue light-emitting device 110B having a tandem structure. This is because the tandem structure has a charge generation layer 153, and the insulating layer 116 can prevent the charge generation layer 153 from coming into contact with the lower electrode 111B. Of course, the insulating layer 116 may be applied to all light-emitting devices.

[0097] 6A includes an insulating layer 125 that covers the organic layer 112 of the light-emitting device 110, and the insulating layer 125 further includes a region that is in contact with the insulating layer 106 or the insulating layer 105. It is more preferable that the insulating layer 125 has a region that is in contact with the insulating layer 106 and the insulating layer 105. By including such an insulating layer 125, film peeling of the light-emitting device 110 is effectively suppressed.

[0098] 6A, the insulating layer 106 has a protrusion 107. If the insulating layer 125 can be in contact with the lower surface of the protrusion 107, peeling of the light-emitting device 110 can be effectively suppressed.

[0099] The insulating layer 105 has a recess 103 for forming the protrusion 107. The recess 103 will be described using the plan view shown in FIG. 6B in addition to FIG. 6A. The plan view also shows the X direction and the Y direction intersecting therewith. FIG. 6A is a cross-sectional view corresponding to A1-A2 along the X direction in FIG. 6B.

[0100] 6A and 6B, it can be seen that recess 103 is located between subpixel 11R and subpixel 11G, and also between subpixel 11G and subpixel 11B. However, as shown in FIG. 6A, the maximum width of recess 103 formed below lower electrode 111 may be wider than the distance between subpixel 11R and subpixel 11G.

[0101] The recesses 103 are preferably laid out in a grid pattern in plan view. Specifically, in the plan view shown in Fig. 6B , the recesses 103 are positioned so as to surround the subpixel 11R, the subpixel 11G, and the subpixel 11B. The recesses 103 allow the insulating layer 125 to have an area in contact with the insulating layer 106, and therefore, the grid-like recesses 103 are preferably able to effectively suppress film peeling of the light-emitting device 110.

[0102] 6A , when the insulating layer 125 is formed by the ALD method, the insulating layer 125 can be provided so as to conform to the side surfaces of the organic layer 112 and the shape of the recess 103. The insulating layer 125 that conforms to the recess 103 can be provided with a wide area that is in contact with the insulating layer 105. With this configuration, film peeling of the light-emitting device 110 can be effectively suppressed.

[0103] Furthermore, when the insulating layer 125 is formed by the ALD method, a recess may be formed on the surface of the insulating layer 125, corresponding to the recess 103. Therefore, the display device 100A has a configuration in which the recess of the insulating layer 125 is filled with an insulating layer 126. It is preferable to use an organic material for such an insulating layer 126, which allows the surface of the insulating layer 126 to be flat in the region overlapping with the recess 103. Furthermore, as shown in FIG. 6A , the surface of the insulating layer 126 in the region overlapping with the recess 103 can be made higher than the upper surface of the organic layer 112. Such an insulating layer 126 can prevent the recess from cutting the common layer 114 or the common electrode.

[0104] Next, the configurations of the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B included in the display device 100A will be described.

[0105] The red light-emitting device 110R has a lower electrode 111R and an upper electrode 113 facing the lower electrode 111R. The green light-emitting device 110G has a lower electrode 111G and an upper electrode 113 facing the lower electrode 111G. The blue light-emitting device 110B has a lower electrode 111B and an upper electrode 113 facing the lower electrode 111B. The upper electrode 113 described above can be common to the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B. A layer shared by each light-emitting device may be referred to as a common layer, and if the common layer functions as an electrode, it may be referred to as a common electrode. In other words, the upper electrode 113 may be referred to as a common electrode. The insulating layer 126 described above can prevent the common layer 114 or the upper electrode 113, which is a common electrode, from being cut.

[0106] The red light-emitting device 110R has an organic layer 112R between a lower electrode 111R and an upper electrode 113. The organic layer 112R preferably has at least one light-emitting layer, forming a so-called single structure. The organic layer 112R can be formed over the lower electrode 111R, and FIG. 6A shows the case where the organic layer 112R is formed on the side surface of the lower electrode 111R and the side surface of the insulating layer 106R. The organic layer of the red light-emitting device 110R includes an electron injection layer in addition to the light-emitting layer, and the electron injection layer may be included as the common layer 114. Of course, the common layer 114 may be formed of a layer other than the electron injection layer.

[0107] The organic layer 112R can be formed after the recess 103 is formed, for example, using a vacuum deposition method, and then processed by a lithography process. As mentioned above, the organic layer 112R may be located on the side surface of the lower electrode 111R and may also be located on the side surface of the insulating layer 106R. FIG. 6A shows a configuration in which the side surface of the insulating layer 106R has a tapered shape and the side surface of the lower electrode 111R also has a tapered shape. However, a tapered shape makes it easier for the organic layer 112R to be formed on the side surface. Furthermore, although not shown in FIG. 6A , the end of the lower electrode 111R may be set back from the end of the insulating layer 106R. If the end of the lower electrode 111R is set back, the organic layer 112R may also be formed on part of the upper surface of the insulating layer 106R.

[0108] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a surface to be formed, for example, the upper surface of a substrate, and includes a region in which the angle (also referred to as the taper angle) between the inclined side surface and the substrate surface is less than 90°.

[0109] The green light-emitting device 110G has an organic layer 112G between a lower electrode 111G and an upper electrode 113. The organic layer 112G preferably has at least one light-emitting layer and has a so-called single structure. The organic layer 112G can be formed over the lower electrode 111G, and FIG. 6A shows the case where the organic layer 112G is formed on the side surface of the lower electrode 111G and the side surface of the insulating layer 106G. The organic layer of the green light-emitting device 110G includes an electron injection layer in addition to the light-emitting layer, but the electron injection layer may also be included as the common layer 114. Of course, a layer other than the electron injection layer may also be included as the common layer 114.

[0110] The organic layer 112G can be formed after the recess 103 is formed, for example, using a vacuum deposition method, and then processed by a lithography process. As described above, the organic layer 112G may be located on the side surface of the lower electrode 111G and may also be located on the side surface of the insulating layer 106G. FIG. 6A shows a configuration in which the side surface of the insulating layer 106G has a tapered shape and the side surface of the lower electrode 111G also has a tapered shape. However, a tapered shape makes it easier for the organic layer 112G to be formed on the side surface. Furthermore, although not shown in FIG. 6A , the end of the lower electrode 111G may be set back from the end of the insulating layer 106G. If the end of the lower electrode 111G is set back, the organic layer 112G may also be formed on part of the upper surface of the insulating layer 106G.

[0111] The blue light-emitting device 110B has an organic layer 112B between the lower electrode 111B and the upper electrode 113. The organic layer 112B preferably has at least two light-emitting layers and a charge generation layer 153 between them, forming a so-called tandem structure. The organic layer 112B can be formed over the lower electrode 111B, and FIG. 6A shows the organic layer 112B formed on the side surface of the lower electrode 111B and the side surface of the insulating layer 106B. The organic layer of the blue light-emitting device 110B includes an electron injection layer in addition to the light-emitting layer, but the electron injection layer may also be included as the common layer 114. Of course, the common layer 114 may be anything other than the electron injection layer.

[0112] The organic layer 112B can be formed after the recess 103 is formed, for example, using a vacuum deposition method, and then processed by a lithography process. As described above, the organic layer 112B may be located on the side surface of the lower electrode 111B, and may also be located on the side surface of the insulating layer 106B. FIG. 6A shows a configuration in which the side surface of the insulating layer 106B has a tapered shape, and the side surface of the lower electrode 111B also has a tapered shape. However, a tapered shape makes it easier for the organic layer 112B to be formed on the side surface. Furthermore, although not shown in FIG. 6A , the end of the lower electrode 111B may be set back from the end of the insulating layer 106B. If the end of the lower electrode 111B is set back, the organic layer 112B may also be formed on part of the upper surface of the insulating layer 106B.

[0113] The electron injection layer, which is a common layer, can be located above the insulating layer 126, and therefore the insulating layer 126 can prevent the electron injection layer from being disconnected between adjacent light-emitting devices.

[0114] A protective layer 121 may be provided on the upper electrode 113. The protective layer 121 may also be a common layer. The protective layer 121 may also be located above the insulating layer 126, so that the insulating layer 126 can prevent the protective layer 121 from being cut between adjacent light-emitting devices.

[0115] The above-described film peeling of the light-emitting device 110 may include peeling of the organic layer 112R, the organic layer 112G, and the organic layer 112B from the lower electrode 111. In the display device 100A, peeling of the organic layer 112R, the organic layer 112G, and the organic layer 112B from the lower electrode 111 can be sufficiently suppressed.

[0116] Although not shown in Fig. 6 etc., the SBS structure may be combined with a color filter or a color conversion layer. The color filter or color conversion layer is positioned so as to overlap the light-emitting devices, and may be provided for all the light-emitting devices, or may be provided for only some of the light-emitting devices, for example, only the blue light-emitting devices.

[0117] A color filter has the function of transmitting light in a specific wavelength range (typically, red, green, or blue, etc.). Transmitting light in a specific wavelength range means that the transmitted light through the color filter has a peak wavelength corresponding to the specific color. For example, there are red color filters that transmit light in the red wavelength range, green color filters that transmit light in the green wavelength range, and blue color filters that transmit light in the blue wavelength range.

[0118] The color filters can be formed at desired positions using various materials such as chromatic translucent resins by a printing method, an inkjet method, an etching method using photolithography, etc. As the chromatic translucent resins, photosensitive organic resins or non-photosensitive organic resins can be used, but using a photosensitive organic resin is preferable because it can reduce the number of resist masks used in the etching and therefore simplifies the process.

[0119] The chromatic color is a color other than achromatic colors such as black, gray, and white, and specifically, red, green, blue, etc. The color of the color filter may be cyan, magenta, yellow, etc.

[0120] The thickness of the color filter can be set to 500 nm or more and 5 μm or less.

[0121] By using a color filter, it is possible to eliminate the need for optical elements such as a circular polarizer or a polarizer disposed in the display device 100A.

[0122] The color conversion layer is preferably made of a phosphor or quantum dots (QDs), which have a narrow peak width in the emission spectrum and can produce light with good color purity.

[0123] 7 and other figures, a display device 100B having a plurality of light-emitting devices will be described. The display device 100B has a configuration in which the green light-emitting device 110G and the blue light-emitting device 110B are arranged in a tandem structure, and the red light-emitting device 110R is arranged in a single structure. This configuration differs from the display device 100A, but the other configurations are the same as those of the display device 100A. The green light-emitting device 110G having the tandem structure has a charge generation layer 153G, just like the blue light-emitting device 110B.

[0124] The display device 100B may include both a single-structure light-emitting device and a tandem-structure light-emitting device, and the light-emitting device to which the tandem structure is applied may be a low-reliability light-emitting device, and the number of such light-emitting devices may be two or more. Specifically, the tandem structure may be applied to the green and blue light-emitting devices, and the single structure may be applied to the red light-emitting device.

[0125] Furthermore, in the display device 100B, like the display device 100A, peeling of the organic layer 112R, the organic layer 112G, and the organic layer 112B from the lower electrode 111 can be sufficiently suppressed.

[0126] [Display Device 100C] Next, a display device 100C provided with a plurality of light-emitting devices will be described with reference to Fig. 8 etc. The display device 100C has a configuration in which a portion of the organic layer remains in the recess 103, and is different from the display device 100A in this configuration, but is otherwise similar to the display device 100A.

[0127] As shown in FIG. 8A , in the display device 100C, a step can be created in the organic layer 112 using the recess 103. The organic layer 112 is then processed using a lithography process. As a result, a portion of the organic layer 112R, a portion of the organic layer 112G, and a portion of the organic layer 112B remain in the recess 103. In the recess 103, the remaining portion of the organic layer 112R may be covered with an insulating layer 125a corresponding to the insulating layer 125. In the recess 103, the remaining portion of the organic layer 112G may be covered with an insulating layer 125b corresponding to the insulating layer 125. In the recess 103, the remaining portion of the organic layer 112B may be covered with an insulating layer 125c corresponding to the insulating layer 125.

[0128] In the display device 100C, the insulating layers 125a, 125b, and 125c have regions that contact the lower surface of the insulating layer 106, and therefore, the organic layers 112R, 112G, and 112B can be prevented from peeling off.

[0129] 8A is the length of the protrusion of the lower electrode 111G in the X direction along the arrangement direction of the subpixels 11R, 11G, and 11B, in other words, the width of the region where the lower electrode 111G overlaps with the recess 103. If the side surface of the lower electrode 111G has a tapered shape, the width W1 may be determined using the lower end of the lower electrode 111G. Although the width W1 has been described using the lower electrode 111G, the width W1 can be understood by replacing the lower electrode 111G with the lower electrode 111B. The width W1 can also be understood by replacing the lower electrode 111G with the lower electrode 111R.

[0130] The width W2 shown in FIG. 8A is the width of the recess 103 in the X direction, along the arrangement direction of the subpixels 11R, 11G, and 11B, in the region that does not overlap with the lower electrode 111R and the lower electrode 111G. The width W2 is also shown in the plan view of FIG. 8B. As shown in FIG. 8A and other figures, the width W2 can be rephrased as the shortest distance between the adjacent insulating layers 106G and 106R in the display device 100C. If the side surface of the insulating layer 106G or the side surface of the insulating layer 106R has a tapered shape, the width W2 can be determined using the lower end of the insulating layer 106G or the lower end of the insulating layer 106R. If the side surface of the insulating layer is not tapered, the width W2 can be rephrased as the shortest distance between the adjacent lower electrodes 111G and 111R in the display device 100C. When the side surface of the lower electrode 111G or the side surface of the lower electrode 111R has a tapered shape, the width W2 may be determined using the lower end of the lower electrode 111G or the lower end of the lower electrode 111R.

[0131] The width W3 shown in FIG. 8A is the width of the recess 103 in the X direction, along the arrangement direction of the subpixels 11R, 11G, and 11B, in a region that does not overlap with the lower electrode 111G and the lower electrode 111B. The width W3 is also shown in the plan view of FIG. 8B. The width W3 can be rephrased as the shortest distance between the adjacent lower electrodes 111B and 111G in the display device 100C. If the side surface of the lower electrode 111B or the side surface of the lower electrode 111G has a tapered shape, the width W3 may be determined using the lower end of the lower electrode 111B or the lower end of the lower electrode 111G. While the width W3 has been described using the lower electrode 111B and the lower electrode 111G, the width W3 can be understood by replacing the lower electrode 111G with the lower electrode 111R.

[0132] The width W1 may be any width that causes a discontinuity in the organic layer 112G and allows the insulating layer 125 to contact the lower surface of the insulating layer 106G. The lower limit of the width W1 is preferably 2 nm or more, 5 nm or more, 10 nm or more, or 20 nm or more, and the upper limit of the width W1 is preferably 500 nm or less, 300 nm or less, 200 nm or less, 150 nm or less, or 100 nm or less. The lower and upper limits of the width W1 can be selected from the values ​​described above.

[0133] The width W2 is preferably greater than twice the total thickness of the organic layer 112G. For example, if the total thickness of the organic layer 112G is 100 nm, the width W2 is set to 200 nm or more and 1200 nm or less, preferably 200 nm or more and 1000 nm or less, and more preferably 200 nm or more and 900 nm or less. This causes the organic layer 112G to be cut by the recess 103. This is sometimes referred to as a step occurring in the organic layer 112G. The organic layer 112G can then be formed on the lower electrode 111G. At this time, as shown in FIG. 8A, the organic layer 112G is formed so as to cover the side surfaces of the lower electrode 111G.

[0134] The width W2 may be adjusted appropriately depending on the processing accuracy when forming the recess 103, the film formation conditions of the organic layer 112G, etc. When the organic layer 112G is formed using, for example, a vacuum deposition method, a step may occur in the organic layer 112G even if the width W2 is less than twice the film thickness of the organic layer 112G. For example, when the film thickness of the organic layer 112G is 100 nm, the lower limit of the width W2 may be set to 100 nm or more. The upper limit of the width W2 can be selected from the values ​​described above for the case where the width W2 is more than twice the film thickness of the organic layer 112G.

[0135] Width W3 is preferably greater than twice the total thickness of organic layer 112B. For example, if the total thickness of organic layer 112B is 150 nm, width W3 is set to 300 nm or more and 1200 nm or less, preferably 300 nm or more and 1000 nm or less, and more preferably 300 nm or more and 900 nm or less. This creates a step in organic layer 112B due to recess 103, allowing organic layer 112B to be formed on lower electrode 111B. At this time, as shown in FIG. 8A , organic layer 112B is formed so as to cover the side surfaces of lower electrode 111B.

[0136] The width W3 may be adjusted appropriately depending on the processing accuracy when forming the recess 103, the film formation conditions of the organic layer 112B, etc. When the organic layer 112B is formed using, for example, a vacuum deposition method, a step may occur in the organic layer 112B even if the width W3 is less than twice the film thickness of the organic layer 112B. For example, when the film thickness of the organic layer 112B is 150 nm, the lower limit of the width W3 may be set to 150 nm or more. The upper limit of the width W3 can be selected from the values ​​described above for the case where the width W3 is more than twice the film thickness of the organic layer 112B.

[0137] 8B, in the display device 100C, the width W2 is preferably narrower than the width W3. Alternatively, the width W2 in the display device 100C may be the same as the width W3, provided that the width W2 satisfies the upper limit of the width W2 described above.

[0138] As described above, an extremely high-definition display device can be realized by using the recess 103 to create a step in the organic layer 112. For example, pixels can be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, but 20000 ppi or less, or 30000 ppi or less.

[0139] In the display device C, the tandem structure may be applied to the green light-emitting device 110G as in the display device B.

[0140] 9 etc., a display device 100D provided with a plurality of light-emitting devices will be described. Note that the display device 100D has a configuration in which an insulating layer 127 is provided in the recess 103, and is different from the display device 100C in this configuration, but is otherwise similar to the display device 100C.

[0141] As shown in FIG. 9 , display device 100D has insulating layer 127 located on insulating layers 125a, 125b, and 125c. As described for display device 100C, when organic layer 112 is processed using a lithography process, portions of organic layer 112R, organic layer 112G, and organic layer 112B remain in recess 103, and the side surfaces of the remaining organic layer 112 are exposed by the lithography process. The organic layer 112 may peel off from such exposed surfaces and fall off from recess 103. Display device 100D has a configuration in which organic layer 112 is covered with insulating layer 127 to prevent peeling off.

[0142] As described above, an extremely high-definition display device can be realized by using the recess 103 to create a step in the organic layer 112. For example, pixels can be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, but 20000 ppi or less, or 30000 ppi or less.

[0143] In the display device D, the tandem structure may be applied to the green light-emitting device 110G as in the display device B.

[0144] [Manufacturing Method Example] A manufacturing method of the display device 100D shown in FIG. 9 will be described with reference to FIGS.

[0145] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by sputtering, CVD, vacuum deposition, PLD, ALD, etc. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0146] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, or knife coating.

[0147] Furthermore, when processing the thin film that constitutes the display device, it can be processed using a lithography method or the like. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0148] There are two typical lithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0149] In lithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. An electron beam can also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0150] The thin film can be processed by dry etching, wet etching, sandblasting, etc. The resist mask can be removed by a dry etching process such as ashing, a wet etching process, a wet etching process after a dry etching process, or a dry etching process after a wet etching process.

[0151] As a typical example of a planarization treatment for a thin film, a polishing treatment such as chemical mechanical polishing (CMP) can be suitably used. Alternatively, a dry etching treatment or a plasma treatment may be used. The polishing treatment, dry etching treatment, and plasma treatment may be performed multiple times, or may be performed in combination. When a combination of these treatments is performed, the order of the steps is not particularly limited, and may be set appropriately according to the unevenness of the surface to be treated.

[0152] To precisely process a thin film to a desired thickness, for example, CMP is used. In this case, the thin film is first polished at a constant processing speed until a portion of the top surface thereof is exposed. Then, the thin film is polished at a slower processing speed until the thin film reaches the desired thickness, thereby enabling highly accurate processing.

[0153] Methods for detecting the end point of polishing include an optical method in which light is irradiated onto the surface of the surface to be treated and changes in the reflected light are detected, a physical method in which changes in the polishing resistance that the processing device receives from the surface to be treated are detected, and a method in which magnetic field lines are applied to the surface to be treated and changes in the magnetic field lines due to the eddy currents that are generated are used.

[0154] After the upper surface of the thin film is exposed, the thickness of the thin film can be controlled with high precision by performing a polishing process at a slow processing speed while monitoring the thickness of the thin film by an optical method such as a laser interferometer. If necessary, the polishing process may be performed multiple times until the thin film reaches the desired thickness.

[0155] [Preparation of Substrate 101] As shown in Figure 10A, a substrate 101 is prepared. As the substrate 101, a substrate having heat resistance at least sufficient to withstand subsequent heat treatment can be used. When an insulating substrate is used as the substrate 101, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or the like is used. Alternatively, as the substrate 101, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can also be used.

[0156] The substrate 101 is preferably a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the insulating substrate. Alternatively, the substrate 101 may be a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate. Examples of the semiconductor circuit include a pixel circuit and a drive circuit (gate driver, source driver). The pixel circuit includes a semiconductor element that drives a light-emitting device located in a subpixel, a switching element that drives the semiconductor element, and the like. The drive circuit is a control circuit that supplies an electrical signal that drives the semiconductor element or the switching element. In addition to the above circuits, an arithmetic circuit, a memory circuit, and the like may also be used as the semiconductor circuit.

[0157] 10A, an insulating film 105A that will become the insulating layer 105, and an insulating film 106A that will become the insulating layers 106R, 106G, and 106B are sequentially formed on the substrate 101. Note that in this specification, the film in the formed state is referred to as an insulating film, and the film in the processed state is referred to as an insulating layer. A wiring layer included in the semiconductor circuit, or a wiring layer that enables connection to the semiconductor circuit, may be formed on the insulating film 105A.

[0158] Next, lower electrodes 111R, 111G, and 111B are formed on the insulating film 106A. The lower electrodes 111R, 111G, and 111B are collectively referred to as lower electrodes 111, and an example of a process for obtaining the lower electrodes 111 will be described in detail with reference to FIGS. 14A to 14D.

[0159] 14A, a first conductive film 61 is formed on the insulating film 106A. The first conductive film 61 can be formed by selecting from the materials described later as the lower electrode, and it is preferable to use, for example, ITO or ITSO.

[0160] A second conductive film 62 is formed on the first conductive film 61. The second conductive film 62 can be formed by selecting from the materials described below as the lower electrode, and for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC) or the like can be used. The second conductive film 62 can provide reflectivity to the lower electrode.

[0161] A resist mask 63 is formed to process the second conductive film 62. The resist mask 63 can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material. The second conductive film 62 can be processed by wet etching or dry etching. When APC is used as the second conductive film 62, it is preferable to use wet etching.

[0162] Thereafter, the resist mask 63 is removed, and the processed conductive layer 64 can be obtained as shown in FIG. 14B.

[0163] 14C, a third conductive film 65 is formed on the conductive layer 64. The third conductive film 65 can be formed using a material selected from the materials described below for the lower electrode, and it is more preferable to use the same material as the first conductive film 61, such as ITO or ITSO. If the third conductive film 65 is made of the same material as the first conductive film 61, the adhesion between the first conductive film 61 and the third conductive film 65 is improved, thereby preventing the conductive layer 64 located between them from being exposed to the etching agent. In other words, processing damage to the conductive layer 64 can be reduced.

[0164] A resist mask 66 is formed to process the first conductive film 61 and the third conductive film 65. The resist mask 66 can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material. The first conductive film 61 and the third conductive film 65 can be processed using a wet etching method or a dry etching method, but it is preferable to use a wet etching method. Since the first conductive film 61 and the third conductive film 65 are made of the same material, the first conductive film 61 and the third conductive film 65 can be processed without changing the conditions for the wet etching method.

[0165] 14D, the resist mask 66 is removed, and the processed conductive layers 67 and 68 can be obtained. The ends of the conductive layers 67 and 68 preferably have a tapered shape, and it is more preferable that the tapered shape of the conductive layer 67 is provided so as to be continuous with the tapered shape of the conductive layer 68.

[0166] In such a process, the insulating film 106A can also function as an etching stop film when processing into a conductive layer.

[0167] 14D, it is preferable to use a structure in which a conductive layer 67, a conductive layer 64, and a conductive layer 68 are stacked as the lower electrode 111. The conductive layer 64 can provide reflectivity to the lower electrodes 111R, 111G, and 111B.

[0168] The lower electrode 111 may have the above-described stacked structure or a single layer. Figure 15A shows a lower electrode 111 having a stacked structure different from that shown in Figure 14, which includes a first conductive layer 111_1 and a second conductive layer 111_2 over an insulating film 106A. When the lower electrode 111 has a single-layer structure, it may have a structure including only the first conductive layer 111_1 shown in Figure 15A. In Figure 15A, the end of the first conductive layer 111_1 or the second conductive layer 111_2 may have a tapered shape.

[0169] 15B shows a lower electrode 111 having a first conductive layer 111_3 and a second conductive layer 111_4 over an insulating film 106A, and unlike in FIG. 15A, the bottom end of the first conductive layer 111_3 is recessed from the top end of the insulating layer 106. When the lower electrode 111 has a single-layer structure, it may have a structure including only the first conductive layer 111_3 shown in FIG. 15B. In FIG. 15B, the end of the first conductive layer 111_3 or the second conductive layer 111_4 may have a tapered shape.

[0170] 10B , regions of the insulating film 106A that do not overlap with the lower electrodes 111R, 111G, and 111B are removed to form the insulating layers 106R, 106G, and 106B. For example, a resist mask may be formed on the insulating film 106A, and the insulating layers 106R, 106G, and 106B may be formed using a dry etching method or a wet etching method.

[0171] As the dry etching method, a parallel plate type RIE (Reactive Ion Etching) method or an ICP (Inductively Coupled Plasma) etching method can be used. The etching gas used in the dry etching method is, for example, C４ F ６ Gas, C ４ F ８ Gas, CF ４ Gas, SF ６ Gas, CHF ３ Gas, Cl ２ Gas, BCl ３ gas or SiCl ４ The gases may be used alone or in combination of two or more, or oxygen gas, helium gas, argon gas, hydrogen gas, or the like may be added to the above gases as appropriate.

[0172] Thereafter, as shown in FIG. 10B , recesses 103 are formed in the insulating film 105A to form the insulating layer 105 having the recesses 103. The recesses 103 can be formed by dry etching or wet etching, but are preferably formed by isotropic plasma etching or ashing. For example, RF plasma processing using oxygen as the gas is preferable as the plasma etching processing. Furthermore, when an inorganic material is used for the insulating film 105A, wet etching is preferable. In this manner, the recesses 103 can be formed. Furthermore, the widths of the recesses 103 as seen in a plan view may all be the same or may have different widths.

[0173] Furthermore, if ashing is used, the formation of the recess 103 and the ashing process before the removal of the resist mask for forming the insulating layer 106 can be performed simultaneously. The substrate is placed in an apparatus used for ashing (ashing apparatus), and the power density of the bias voltage applied to the substrate side is set to 1 W / cm. ２ More than 5W / cm ２ Furthermore, oxygen can be used as the gas introduced into the ashing device, and in this case, the substrate temperature should be set to a temperature between room temperature and 300°C, preferably between 100°C and 250°C.

[0174] A portion of the recess 103 can overlap a portion of the insulating layers 106R, 106G, and 106B, and more specifically, a portion of the lower surface of each of the insulating layers 106R, 106G, and 106B is exposed. The portions of the lower surfaces of the insulating layers 106R, 106G, and 106B protrude from the upper end of the insulating layer 105 that defines the recess 103, and these portions are referred to as protrusions 107.

[0175] 10C , a film containing a first light-emitting compound (organic film 112Rf) is formed on the lower electrode 111R, the lower electrode 111G, the lower electrode 111B, and the insulating layer 105. The organic film 112Rf has a single structure and is capable of emitting red light.

[0176] The organic film 112Rf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the film may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0177] At this time, a step occurs in the organic film 112Rf within the recess 103. In FIG. 10C, a step occurs in the organic film 112Rf at least at the protruding portion of the insulating layer 106. As a result, the organic film 112Rf is selectively formed within the recess 103 and on the lower electrode 111R, the lower electrode 111G, and the lower electrode 111B. The selective formation of the organic film 112Rf without a processing step may be referred to as being formed in a self-aligned manner. The organic film 112Rf is also formed on the side surfaces of the lower electrode 111R, the lower electrode 111G, and the lower electrode 111B. The organic film 112Rf is also formed on the side surfaces of the insulating layer 106R, the insulating layer 106G, and the insulating layer 106B. However, the organic film 112Rf is not formed on the lower surface of the insulating layer 106R corresponding to the protrusion 107, the lower surface of the insulating layer 106G, and the lower surface of the insulating layer 106B.

[0178] Subsequently, the insulating film 125A is formed on the organic film 112Rf by using a sputtering method, a CVD method, an MBE method, a PLD method, an ALD method, or the like as appropriate.

[0179] The insulating film 125A is formed so as to cover the upper and side surfaces of the organic film 112Rf, the lower surface of the insulating layer 106, and the recess 103. The insulating film 125A preferably has a region in contact with the lower surface of the insulating layer 106. The insulating film 125A is also formed in the recess 103 so as to cover the organic film 112Rf that has been formed separately.

[0180] Although not mentioned above, the insulating film 125A may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for the insulating film 125A is preferable because it can prevent the organic film 112Rf from being exposed to ultraviolet light and thereby prevent deterioration of the organic film 112Rf.

[0181] Alternatively, a metal oxide film can be used for the insulating film 125A. Examples of the metal oxide film include In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), and indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide). Alternatively, an indium tin oxide film containing silicon can be used. For example, an In—Ga—Zn oxide film can be formed as the insulating film 125A by sputtering.

[0182] Instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0183] Furthermore, the insulating film 125A can be made of the aforementioned inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide. For example, an aluminum oxide film can be formed as the insulating film 125A using the ALD method. Film formation using the ALD method allows atomic layers to be deposited one by one, so the insulating film 125A can be formed with good coverage on the lower surfaces of the insulating layers 106R, 106G, and 106B, the recesses 103, and the like. Using the ALD method is preferable because it reduces damage to the organic film 112Rf.

[0184] For example, when forming an aluminum oxide film by the ALD method, a solvent and a liquid containing an aluminum precursor compound (trimethylaluminum (TMA, Al(CH ３ ) ３ ) and H as an oxidant. ２ Two types of gases are used: O. Other materials include tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0185] Note that the insulating film 125A may be formed by a sputtering method, a CVD method, or a PECVD method, which have a faster film formation rate than an ALD method, thereby enabling a highly reliable display device to be manufactured with high productivity.

[0186] The insulating film 125A may have a stacked structure of two or more layers. For example, the insulating film 125A may have a two-layer structure in which a lower layer is an inorganic insulating film (e.g., an aluminum oxide film) formed by an ALD method and an upper layer is an inorganic film (e.g., an In—Ga—Zn oxide film, an aluminum film, or a tungsten film) formed by a sputtering method.

[0187] 10D, a resist mask 181 is formed on the insulating film 125A. At this time, the resist mask 181 is formed in a portion that overlaps with the organic film 112Rf and a portion of the recess 103.

[0188] 10D, the end of the resist mask 181 has a shape perpendicular to the surface of the substrate 101, but the shape of the end of the resist mask 181 is not limited to this. The end of the resist mask 181 may have a tapered shape or an inversely tapered shape.

[0189] Next, the insulating film 125A that is not covered with the resist mask 181 is removed, thereby forming the insulating layer 125a as shown in FIG. 11A. Dry etching or wet etching can be used to remove part of the insulating film 125A. Then, the resist mask 181 is removed.

[0190] 11A, a portion of the organic film 112Rf is removed by etching using the insulating layer 125a as a hard mask, thereby forming an organic layer 112R. As a result, the organic layer 112R is positioned on the lower electrode 111R, and the insulating layer 125a is further positioned on the organic layer 112R. Note that a portion of the organic film 112Rf may remain in the recess 103.

[0191] As described above, the organic layer 112R and the lower electrode 111R can be sealed by the insulating layer 106R and the insulating layer 125a. The organic layer 112R and the lower electrode 111R can also be sealed by the insulating layer 125a and the side surface of the insulating layer 105 located in the recess 103. This configuration can prevent the organic layer 112R from peeling off from the lower electrode 111R.

[0192] 11B, a film containing a second light-emitting compound (organic film 112Gf) is formed on the lower electrode 111G, the lower electrode 111B, the insulating layer 105, and the insulating layer 125a. The organic film 112Gf has a single structure and is capable of emitting green light.

[0193] The organic film 112Gf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the film may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0194] At this time, a step occurs in the organic film 112Gf within the recess 103. In FIG. 11B, a step occurs in the organic film 112Gf at least at the protruding portion of the insulating layer 106. As a result, the organic film 112Gf is formed within the recess 103, on the lower electrode 111G, on the lower electrode 111B, on the insulating layer 105, and on the insulating layer 125a. The selective formation of the organic film 112Gf without a processing step may be referred to as being formed in a self-aligned manner. The organic film 112Gf is also formed on the side surfaces of the lower electrode 111G and the lower electrode 111B. The organic film 112Gf is also formed on the side surfaces of the insulating layer 106G and the insulating layer 106B. However, the organic film 112Gf is not formed on the lower surface of the insulating layer 106G corresponding to the protruding portion and on the lower surface of the insulating layer 106B.

[0195] Subsequently, the insulating film 125B is formed on the organic film 112Gf. The insulating film 125B can be formed by appropriately using a sputtering method, a CVD method, an MBE method, a PLD method, an ALD method, or the like. For the configuration and the like of the insulating film 125B, the description of the insulating film 125A can be referred to.

[0196] 11C, a resist mask 182 is formed on the insulating film 125B. At this time, the resist mask 182 is formed in a portion that overlaps with the organic film 112Gf and a portion of the recess 103.

[0197] 11C, the end portion of the resist mask 182 has a shape perpendicular to the surface of the substrate 101, but the shape of the end portion of the resist mask 182 is not limited to this. The end portion of the resist mask 182 may have a tapered shape or an inversely tapered shape.

[0198] Next, the insulating film 125B that is not covered with the resist mask 182 is removed, thereby forming the insulating film 125b as shown in FIG. 11D. Dry etching or wet etching can be used to remove part of the insulating film 125B. Then, the resist mask 182 is removed.

[0199] Next, as shown in FIG. 11D , an etching process using the insulating film 125b as a hard mask is performed to remove a portion of the organic film 112Gf, thereby forming an organic layer 112G. As a result, the organic layer 112G is located on the lower electrode 111G, and the insulating layer 125b is located on the organic layer 112G. Note that a portion of the organic film 112Gf may remain in the recess 103. In FIG. 11D , a portion of the organic film 112Rf and a portion of the organic film 112Gf remain in the recess 103, and are separated from each other.

[0200] As described above, the organic layer 112G and the lower electrode 111G can be sealed by the insulating layer 106G and the insulating film 125b. The organic layer 112G and the lower electrode 111G can also be sealed by the side surface of the insulating layer 105 located in the recess 103 and the insulating layer 125b. This configuration can prevent the organic layer 112G from peeling off from the lower electrode 111G.

[0201] [Formation of Organic Layer 112B and Insulating Layer 125c] A film containing a third light-emitting compound (not shown, but referred to as organic film Bf) is formed on the lower electrode 111B, insulating layer 105, insulating layer 125a, and insulating layer 125b. The organic film 112Bf has a tandem structure and is capable of emitting blue light.

[0202] At this time, a step is generated in the organic film 112Bf within the recess 103. To ensure the step is generated in this process, the width of the recess 103, as seen in a plan view, should be wider between the organic layer 112G and the organic layer 112B and between the organic layer 112R and the organic layer 112B than between the organic layer 112R and the organic layer 112G. In FIG. 12A, a step is generated in the organic film 112Bf at least at the protruding portion of the insulating layer 106. As a result, the organic film 112Bf is formed within the recess 103, on the lower electrode 111B, on the insulating layer 105, on the insulating layer 125a, and on the insulating layer 125b. The selective formation of the organic film 112Bf without a processing step may be referred to as being formed in a self-aligned manner. The organic film 112Bf is also formed on the side surfaces of the lower electrode 111B. The organic film 112Bf is also formed on the side surfaces of the insulating layer 106B. However, the organic film 112Bf is not formed on the lower surface of the insulating layer 106B corresponding to the protruding portion.

[0203] Referring to the steps relating to organic layer 112R and organic layer 112G, as shown in Fig. 12A, charge generation layer 153 and organic layer 112B are positioned on lower electrode 111B, and insulating layer 125c is positioned on organic layer 112B. Note that part of organic film 112Bf may remain in recess 103. In Fig. 12A, part of organic film 112Gf and part of organic film 112Bf remain in recess 103, and are separated from each other.

[0204] As described above, the organic layer 112B and the lower electrode 111B can be sealed by the insulating layer 106B and the insulating layer 125c. The organic layer 112B and the lower electrode 111B can also be sealed by the insulating layer 125c and the side surface of the insulating layer 105 located in the recess 103. This configuration can prevent the organic layer 112B from peeling off from the lower electrode 111B.

[0205] FIG. 12B shows an example of a configuration different from the area surrounded by the dashed line in FIG. 12A.

[0206] As shown in Figure 12B, a step may be formed in the insulating layer 105 in the recess 103 during the process of forming the organic layer 112G, etc. Specifically, as shown in Figure 12B, a step 15 is formed near the end of the insulating layer 125a. The shape of the organic film remaining in the recess 103 is not particularly limited, and as shown in Figure 12B, the organic layers 12R and 12G may remain on the side surfaces of the recess 103 as well as on the bottom surfaces of the recess 103. The process of forming the organic layer 112G, etc. may be interpreted as the process of forming the organic layer 112B, etc.

[0207] 13A , an insulating film 127A is formed on the insulating layer 105, the insulating layer 125a, the insulating layer 125b, and the insulating layer 125c, and a resin film 126A is formed on the insulating film 127A. The insulating film 127A is a film that will become the insulating layer 127, and the resin film 126A is a film that will become the resin layer 126.

[0208] A film that can be used for the insulating film 125A or the like can be used as the insulating film 127A. The insulating film 127A does not necessarily have to be provided.

[0209] Resin film 126A is formed at a temperature lower than the heat resistance temperature of organic layer 112R, organic layer 112G, and organic layer 112B. The substrate temperature when forming the insulating film is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0210] The resin film 126A is preferably formed by a wet film-forming method, for example, by spin coating using a photosensitive material, more specifically, a photosensitive resin composition containing an acrylic resin.

[0211] The resin film 126A is preferably formed using a resin composition containing, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates acid upon irradiation with light and a compound that generates acid upon heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0212] Furthermore, it is preferable to perform heat treatment (also referred to as pre-baking) after forming the resin film 126A. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic layer 112R, the organic layer 112G, and the organic layer 112B. The substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and even more preferably 70° C. or higher and 120° C. or lower. This allows the solvent contained in the resin film 126A to be removed.

[0213] Next, exposure is performed to expose a portion of the resin film 126A to visible light or ultraviolet light. When a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film, visible light or ultraviolet light is irradiated to an area where the insulating layer 126 will not be formed in a later process. The width of the insulating layer 126 to be formed later can be controlled by the exposed area of ​​the resin film 126A. As shown in FIG. 13B , the insulating layer 126 is processed to have an area overlapping the upper surface of the lower electrode 111. The light used for exposure preferably includes i-line (wavelength 365 nm). The light used for exposure may also include at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0214] Subsequently, development is performed to remove the exposed regions of the resin film 126A, thereby forming an insulating layer 126 as shown in Fig. 13B. The insulating layer 126 is formed in a region sandwiched between any two of the lower electrodes 111R, 111G, and 111B. When an acrylic resin is used for the insulating film, it is preferable to use an alkaline solution as the developer, such as an aqueous solution of tetramethylammonium hydroxide (TMAH).

[0215] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0216] Etching may be performed to adjust the height of the surface of the insulating layer 126. The insulating layer 126 may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the resin film that becomes the insulating layer 126, the height of the surface of the insulating film can be adjusted by ashing, for example.

[0217] Next, an etching process is performed using insulating layer 126 as a mask, and as shown in FIG. 13B, portions of insulating layer 125a, insulating layer 125b, and insulating layer 125c are removed, and portions of insulating layer 127A are removed to form insulating layer 127. As a result, openings are formed in insulating layer 127A and insulating layer 125a, exposing the top surface of organic layer 112R. Openings are also formed in insulating layer 127A and insulating layer 125b, exposing the top surface of organic layer 112G. Openings are also formed in insulating layer 127A and insulating layer 125c, exposing the top surface of organic layer 112B.

[0218] The etching process is performed by wet etching. By using the wet etching method, damage to the organic layers 112R, 112G, and 112B can be reduced compared to when using the dry etching method. Wet etching can be performed using an alkaline solution such as TMAH. Alternatively, an acidic solution such as a mixed acid solution containing water, phosphoric acid, dilute hydrofluoric acid, and nitric acid may be used. The chemical solution used in the wet etching process may be alkaline or acidic.

[0219] Furthermore, after exposing portions of the organic layers 112R, 112G, and 112B, further heat treatment may be performed. This heat treatment can remove water contained in the organic layers 112R, 112G, and 112B, as well as water adsorbed to the surfaces of the organic layers 112R, 112G, and 112B. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced-pressure atmosphere is preferred because it enables dehydration at lower temperatures. However, it is preferable to appropriately set the temperature range for the heat treatment, taking into account the heat resistance temperature of the organic layer 112. Considering the heat resistance temperature of the organic layer 112, a temperature of 70°C or higher and 120°C or lower is particularly suitable within the above temperature range.

[0220] 13C , a common layer 114 is formed on the organic layer 112R, the organic layer 112G, the organic layer 112B, and the insulating layer 126. The common layer 114 can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0221] Subsequently, a common electrode 113x is formed on the common layer 114. The common electrode 113x corresponds to an upper electrode. The common electrode 113x can be formed by a sputtering method, a vacuum deposition method, or the like. Alternatively, the common electrode 113x may be formed by stacking a film formed by a deposition method and a film formed by a sputtering method.

[0222] In this manner, the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B can be formed.

[0223] 13C, a protective layer 121 is formed on the common electrode 113x. The protective layer 121 can be formed by a method such as vacuum deposition, sputtering, CVD, or ALD.

[0224] In this manner, the display device 100C having the configuration shown in FIG. 9 and other figures can be manufactured.

[0225] According to the above-described example of the manufacturing method, the organic layer 112 is sealed by the insulating layer 125 and the insulating layer 106 or the insulating layer 105. This configuration not only prevents the organic layer 112 from peeling off from the lower electrode, but also prevents the organic layer 112 from being exposed to chemicals or the like used to remove the resist mask in this method. Therefore, the light-emitting device 110 can be formed without using a metal mask to form the organic layer 112.

[0226] According to the above-described exemplary fabrication method, the difference in optical path length between the lower electrode 111 and the common electrode 113x can be precisely controlled by the thickness of the organic layer 112, so that a display device with excellent color reproducibility and extremely high display quality can be easily fabricated, with little deviation in chromaticity between the light-emitting elements. A structure in which the difference in optical path length is controlled is sometimes referred to as a microcavity structure.

[0227] Furthermore, an insulating layer 126 can be provided between adjacent organic layers 112, and the insulating layer 126 has a tapered edge, which can prevent the common electrode 113x from being cut off. This can prevent connection defects caused by a step in the common electrode.

[0228] In the display device of one embodiment of the present invention or the manufacturing method of the display device, the screen ratio (aspect ratio) of the display portion of the display device is not particularly limited. For example, the display device can be adapted to various screen ratios such as 1:1 (square), 3:4, 16:9, and 16:10.

[0229] This embodiment mode can be combined with other embodiment modes as appropriate.

[0230] Embodiment Mode 2 In this embodiment mode, a structural example of a light-emitting device that can be used for a display device will be described.

[0231] 16A shows a schematic cross-sectional view of a display device 500. The display device 500 has a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, and a light-emitting device 550B that emits blue light. The light-emitting device 550R corresponds to the red light-emitting device 110R, the light-emitting device 550G corresponds to the green light-emitting device 110G, and the light-emitting device 550B corresponds to the blue light-emitting device 110B.

[0232] The light-emitting device 550R has a configuration in which one light-emitting unit 512R_1 is provided between a pair of electrodes (electrode 501 and electrode 502). Similarly, the light-emitting device 550G has a configuration in which one light-emitting unit 512G_1 is provided. The light-emitting device 550B has a configuration in which a light-emitting unit 512B_1, a charge generation layer 531, and a light-emitting unit 512B_2 are provided between a pair of electrodes. In other words, in the display device 500, like the display device 100A shown in FIG. 6A , the light-emitting device 550R and the light-emitting device 550G have a single structure, and the light-emitting device 550B has a tandem structure.

[0233] The electrode 501 functions as a pixel electrode and is provided for each light-emitting device, while the electrode 502 functions as a common electrode and is provided in common to a plurality of light-emitting devices.

[0234] 16A , the light-emitting unit 512B_1 includes a layer 521, a layer 522, a light-emitting layer 523B, and a layer 524. The light-emitting unit 512B_2 includes a layer 522, a light-emitting layer 523B, and a layer 524. The light-emitting unit 512R_1 includes a layer 521, a layer 522, a light-emitting layer 523R, and a layer 524. The light-emitting unit 512G_1 includes a layer 521, a layer 522, a light-emitting layer 523G, and a layer 524.

[0235] The light-emitting device 550B includes a layer 525 between the light-emitting unit 512B_2 and the electrode 502. The light-emitting device 550R includes a layer 525 between the light-emitting unit 512R_1 and the electrode 502. The light-emitting device 550G includes a layer 525 between the light-emitting unit 512G_1 and the electrode 502. In this manner, the layer 525 can be shared by a plurality of light-emitting devices, similar to the electrode 502. In this case, the layer 525 can be referred to as a common layer. By providing one or more common layers between a plurality of light-emitting devices in this manner, the manufacturing process can be simplified, and therefore manufacturing costs can be reduced.

[0236] Note that the present invention is not limited to the above, and the layer 525 may be provided in each of the light-emitting devices 550R, 550G, and 550B. In this case, the layer 525 can also be considered as part of the light-emitting unit 512B_2, the light-emitting unit 512R_1, and the light-emitting unit 512G_1.

[0237] When the electrode 501 functions as an anode and the electrode 502 functions as a cathode, the layer 521 includes, for example, a layer containing a substance with high hole-injection properties (hole-injection layer). The layer 522 includes, for example, one or both of a layer containing a substance with high hole-transport properties (hole-transport layer) and a layer containing a substance with high electron-blocking properties (electron-blocking layer). The layer 524 includes, for example, one or both of a layer containing a substance with high electron-transport properties (electron-transport layer) and a layer containing a substance with high hole-blocking properties (hole-blocking layer). The layer 525 includes, for example, a layer containing a substance with high electron-injection properties (electron-injection layer).

[0238] When electrode 501 functions as a cathode and electrode 502 functions as an anode, for example, layer 521 includes an electron injection layer, layer 522 includes one or both of an electron transport layer and a hole blocking layer, layer 524 includes one or both of a hole transport layer and an electron blocking layer, and layer 525 includes a hole injection layer.

[0239] The layer 522, the light-emitting layer 523B, and the layer 524 may have the same structure (material, film thickness, etc.) between the light-emitting unit 512B_1 and the light-emitting unit 512B_2, or may have different structures. For example, a light-emitting material that emits blue light may be used for the light-emitting layer 523B of the light-emitting unit 512B_1, and a light-emitting material that emits blue-green light may be used for the light-emitting layer 523B of the light-emitting unit 512B_2.

[0240] 16A, the layer 521 and the layer 522 are separately illustrated, but the present invention is not limited thereto. For example, when the layer 521 has a function of both a hole injection layer and a hole transport layer, or when the layer 521 has a function of both an electron injection layer and an electron transport layer, the layer 522 may be omitted.

[0241] When a light-emitting device with a tandem structure is fabricated, two light-emitting units are stacked via a charge generation layer 531. The charge generation layer 531 has at least a charge generation region. The charge generation layer 531 has a function of injecting electrons into one of the light-emitting unit 512B_1 and the light-emitting unit 512B_2 and injecting holes into the other when a voltage is applied between the electrode 501 and the electrode 502.

[0242] The light-emitting layer 523R of the light-emitting device 550R contains a light-emitting substance (also referred to as a light-emitting material) that emits red light, the light-emitting layer 523G of the light-emitting device 550G contains a light-emitting substance that emits green light, and the light-emitting layer 523B of the light-emitting device 550B contains a light-emitting substance that emits blue light. Note that the light-emitting devices 550R and 550G each have a structure in which the light-emitting layer 523B of the light-emitting unit 512B_1 of the light-emitting device 550B is replaced with the light-emitting layer 523R or the light-emitting layer 523G, and the other structures are similar to those of the light-emitting device 550B.

[0243] Note that layers 521, 522, 524, and 525 may each have the same configuration (material, film thickness, etc.) in light-emitting devices of two or more colors or all colors, or may have different configurations in light-emitting devices of all colors.

[0244] A configuration in which multiple light-emitting units are connected in series via the charge generation layer 531, such as light-emitting device 550B, is referred to as a tandem structure in this specification. On the other hand, a configuration in which one light-emitting unit is located between a pair of electrodes, such as light-emitting device 550R and light-emitting device 550G, is referred to as a single structure. The tandem structure may also be referred to as a stack structure. The tandem structure can be used to create a light-emitting device capable of emitting high-brightness light. Furthermore, compared to a single structure, the tandem structure can reduce the current required to achieve the same brightness, thereby improving the reliability of the light-emitting device.

[0245] In a display device according to one embodiment of the present invention, a tandem structure is applied to at least the blue light-emitting device 550B. This structure can improve the reliability of the blue light-emitting device, which is prone to an increase in driving voltage or a decrease in lifetime. Furthermore, improving the reliability of the blue light-emitting device 550B can improve the reliability of the display device. Furthermore, using a single structure for the red light-emitting device 550R can simplify the manufacturing process and increase the yield of the display device.

[0246] Furthermore, light-emitting device 550R, light-emitting device 550G, and light-emitting device 550B have an SBS structure in which at least a light-emitting layer is created separately for each light-emitting device. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the degree of freedom in material and configuration selection and facilitating improvements in brightness and reliability.

[0247] The display device 500 of one embodiment of the present invention employs a tandem light-emitting device and can be considered to have an SBS structure. Therefore, the display device 500 can have both the advantages of the tandem structure and the SBS structure. Note that the light-emitting device 550B in the display device 500 shown in FIG. 16A has a structure in which two light-emitting units are formed in series, and therefore may be referred to as a two-tier tandem structure. Furthermore, the light-emitting device 550B with the two-tier tandem structure shown in FIG. 16A has a structure in which a second light-emitting unit having a blue light-emitting layer is stacked on a first light-emitting unit having a blue light-emitting layer.

[0248] 16B , the light-emitting device 550G may be configured in a tandem structure. Similar to the light-emitting device 550B, the light-emitting device 550G includes a light-emitting unit 512G_1 having a layer 521, a layer 522, a light-emitting layer 523G, and a layer 524, and a light-emitting unit 512G_2 having a layer 522, a light-emitting layer 523G, and a layer 524. The light-emitting units 512G_1 and 512G_2 are stacked with a charge-generating layer 531 interposed therebetween.

[0249] The display device 500 shown in FIG. 17A is an example in which three light-emitting units are stacked in a light-emitting device 550B. In FIG. 17A , in the light-emitting device 550B, a light-emitting unit 512B_3 is stacked on a light-emitting unit 512B_2 via a charge generation layer 531. The light-emitting unit 512B_3 has a configuration similar to that of the light-emitting unit 512B_2. Note that, when the light-emitting device has multiple charge generation layers 531, two or more or all of the multiple charge generation layers 531 may have the same configuration (material, film thickness, etc.), or all may have different configurations. Furthermore, while FIG. 17A shows the light-emitting device 550G having a single structure, this is not limiting, and the light-emitting device 550G may have a two- or three-tiered tandem structure.

[0250] 17B shows an example in which n light-emitting units (n is an integer of 2 or more) are stacked in a light-emitting device 550B. In addition, in FIG. 17B, the light-emitting device 550G has a single structure, but this is not limiting, and the light-emitting device 550G may have a tandem structure of two or more stages.

[0251] In this way, by increasing the number of stacked light-emitting units, the luminance obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacked light-emitting units.Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same luminance can be reduced, and therefore the power consumption of the light-emitting device can be reduced in proportion to the number of stacked light-emitting units.

[0252] Next, materials that can be used in light-emitting devices will be described.

[0253] Of the electrodes 501 and 502, a conductive film that transmits visible light is used for the electrode from which light is extracted. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted. When the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light for the electrode from which light is extracted, and a conductive film that reflects visible light and infrared light for the electrode from which light is not extracted.

[0254] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, it is preferable to place the electrode between the reflective layer and the light-emitting unit closest to the reflective layer. In other words, light emitted from the light-emitting device may be reflected by the reflective layer and extracted from the display device.

[0255] Materials for forming the pair of electrodes of a light-emitting device can include metals, alloys, electrically conductive compounds, and mixtures thereof. Specific examples of such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing these metals in combination. Examples of such materials include In-Sn oxide (indium tin oxide, ITO), In-Si-Sn oxide (ITSO), In-Zn oxide (indium zinc oxide), and In-W-Zn oxide. Examples of such materials include aluminum alloys, such as an aluminum-nickel-lanthanum alloy (Al-Ni-La), and silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also referred to as APC). Other examples of the material include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium) that are not listed above as examples, rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0256] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting device. Therefore, it is preferable that one of a pair of electrodes of the light-emitting device is an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other is an electrode that is reflective to visible light (reflective electrode). In other words, it is preferable that a semi-transmissive / semi-reflective electrode is used for the electrode from which light is extracted, and a reflective electrode is used for the electrode from which light is not extracted. When the light-emitting device has a microcavity structure, light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0257] Alternatively, a conductive film that transmits visible light may be provided on the light-emitting layer side of the semi-transmissive / semi-reflective electrode or on the light-emitting layer side of the reflective electrode. Here, the conductive film that transmits visible light functions as an optical adjustment layer. In this case, the conductive film that transmits visible light can also be said to function as a pixel electrode or a common electrode.

[0258] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more as the transparent electrode of the light-emitting device. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0259] The light-emitting device has at least a light-emitting layer. The light-emitting device may further have, as a layer other than the light-emitting layer, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, an electron-blocking material, a substance with high electron-injection properties, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties). For example, the light-emitting device may have, in addition to the light-emitting layer, one or more layers selected from a hole-injection layer, a hole-transport layer, a hole-blocking layer, a charge-generating layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0260] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0261] The light-emitting layer contains one or more light-emitting materials. As the light-emitting material, a material that emits light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, or the like is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0262] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0263] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0264] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0265] The light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole transport properties (hole transport material) and a substance with high electron transport properties (electron transport material) can be used. As the hole-transporting material, a material with high hole transport properties that can be used for the hole-transporting layer, which will be described later, can be used. As the electron-transporting material, a material with high electron transport properties that can be used for the electron-transporting layer, which will be described later, can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0266] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0267] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0268] As the hole transporting material, a material having high hole transporting properties that can be used for the hole transport layer, which will be described later, can be used.

[0269] Examples of the acceptor material include oxides of metals belonging to Groups 4 to 8 of the periodic table. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. Alternatively, organic acceptor materials containing fluorine can be used. Other organic acceptor materials that can be used include quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives.

[0270] For example, as a material with high hole injection properties, a material containing a hole transporting material and an oxide of a metal belonging to Groups 4 to 8 of the periodic table (typically, molybdenum oxide) may be used.

[0271] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0272] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole transport properties and can block electrons. The electron blocking layer can be made of a material that has electron blocking properties among the hole transport materials described above.

[0273] The electron blocking layer has hole transport properties and can therefore also be called a hole transport layer. Furthermore, a layer of the hole transport layer that has electron blocking properties can also be called an electron blocking layer.

[0274] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0275] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron transport properties and can block holes. The hole-blocking layer can be made of a material that has hole-blocking properties and is selected from the above electron-transporting materials.

[0276] The hole blocking layer has electron transport properties and can therefore also be called an electron transport layer. Furthermore, a layer of the electron transport layer that has hole blocking properties can also be called a hole blocking layer.

[0277] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0278] Furthermore, it is preferable that the LUMO level of a material with high electron injection properties has a small difference from the work function value of the material used for the cathode (specifically, 0.5 eV or less).

[0279] The electron injection layer may contain, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer.

[0280] The electron injection layer may contain an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0281] The lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0282] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition temperature (Tg) and is superior in heat resistance compared to BPhen.

[0283] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, for example, a hole transport material and an acceptor material applicable to the hole injection layer.

[0284] The charge generation layer preferably includes a layer containing a material with high electron injection properties. This layer may also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing the electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be alleviated, so that electrons generated in the charge generation region can be easily injected into the electron transport layer.

[0285] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and may contain, for example, an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and may contain an inorganic compound containing lithium and oxygen (lithium oxide (Li ２ In this case, the charge generation layer can be referred to as a layer containing lithium. In addition, the electron injection buffer layer can be suitably made of the materials applicable to the electron injection layer described above.

[0286] The charge generation layer preferably has a layer containing a material with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. When the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or the electron transport layer) and smoothly transferring electrons.

[0287] For the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0288] It should be noted that the charge generation region, electron injection buffer layer, and electron relay layer may not be clearly distinguishable from one another depending on their cross-sectional shapes or characteristics.

[0289] The charge generation layer may contain a donor material instead of an acceptor material. For example, the charge generation layer may contain a layer containing an electron transport material and a donor material that can be used for the electron injection layer.

[0290] When light-emitting units are stacked, an increase in driving voltage can be suppressed by providing a charge generating layer between two light-emitting units.

[0291] 16 and 17, the light-emitting material of the light-emitting layer is not particularly limited. For example, in FIG. 16B, the light-emitting layer 523R of the light-emitting device 550R may contain a phosphorescent material, the two light-emitting layers 523G of the light-emitting device 550G may each contain a fluorescent material, and the two light-emitting layers 523B of the light-emitting device 550B may each contain a fluorescent material.

[0292] Alternatively, for example, in FIG. 16B , the light-emitting layer 523R of the light-emitting device 550R can have a phosphorescent material, the two light-emitting layers 523G of the light-emitting device 550G can each have a phosphorescent material, and the two light-emitting layers 523B of the light-emitting device 550B can each have a fluorescent material.

[0293] Furthermore, in the display device of one embodiment of the present invention, a structure in which a fluorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B, or a structure in which a phosphorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B, may be applied.

[0294] 16A , a configuration in which a phosphorescent material is used for the light-emitting layer 523B of the light-emitting unit 512B_1 and a fluorescent material is used for the light-emitting layer 523B of the light-emitting unit 512B_2, or a configuration in which a fluorescent material is used for the light-emitting layer 523B of the light-emitting unit 512B_1 and a phosphorescent material is used for the light-emitting layer 523B of the light-emitting unit 512B_2, that is, a configuration in which different light-emitting materials are used for the first and second light-emitting layers, may be applied. Note that although the light-emitting units 512B_1 and 512B_2 have been described here, a similar configuration can also be applied to the light-emitting units 512G_1 and 512G_2.

[0295] This embodiment mode can be combined with other embodiment modes as appropriate.

[0296] Embodiment 3 In this embodiment, a light-receiving device that can be used for a display device of one embodiment of the present invention and a display device having a light-receiving and light-emitting function will be described.

[0297] 18A , the light-receiving device 110S has a layer 765 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The layer 765 has at least one active layer and may further have other layers.

[0298] 18B shows a specific example of a layer 765 included in the light-receiving device 110S shown in Fig. 18A. The light-receiving device shown in Fig. 18B includes a layer 766 on a lower electrode 761, an active layer 767 on the layer 766, a layer 768 on the active layer 767, and an upper electrode 762 on the layer 768. The active layer 767 functions as a photoelectric conversion layer.

[0299] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 766 includes a hole transport layer and / or an electron blocking layer. The layer 768 includes an electron transport layer and / or a hole blocking layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 766 and 768 have the reversed structures.

[0300] Next, materials that can be used for the light-receiving device 110S will be described.

[0301] The active layer of the light-receiving device 110S includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0302] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ Fullerene, C ７０ Examples of the fullerene derivatives include [6,6]-phenyl-C ７１ -Butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C ６１-butyric acid methyl ester (abbreviation: PC61BM), 1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C ６０ (abbreviation: ICBA) and others.

[0303] Examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI), and 2,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0304] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0305] Examples of the p-type semiconductor material of the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (abbreviation: CuPc), tetraphenyldibenzoperiflanthene (abbreviation: DBP), zinc phthalocyanine (abbreviation: ZnPc), tin(II) phthalocyanine (abbreviation: SnPc), quinacridone, and rubrene.

[0306] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0307] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0308] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0309] Furthermore, a polymer compound such as poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0310] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0311] The active layer may also contain a mixture of three or more materials. For example, in order to broaden the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0312] The light-receiving device 110S may further include a layer other than the active layer, such as a hole transport layer, an electron transport layer, or a layer containing a bipolar material (a material with high electron transport and hole transport properties). Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a hole injection layer, a hole blocking material, a material with high electron injection properties, or an electron blocking material. For the layers other than the active layer of the light-receiving device, for example, materials that can be used in the above-mentioned light-emitting devices can be used.

[0313] For example, a polymer compound such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviated as PEDOT / PSS) or an inorganic compound such as molybdenum oxide or copper iodide (CuI) can be used as a hole transporting material or an electron blocking material. Furthermore, an inorganic compound such as zinc oxide (ZnO) or an organic compound such as polyethyleneimine ethoxylate (PEIE) can be used as an electron transporting material or a hole blocking material. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0314] [Display Device Having Light Detection Function] A display device according to one embodiment of the present invention includes a display portion in which light-emitting devices 110 are arranged in a matrix, and an image can be displayed on the display portion. The light-receiving device 110S may be provided in the display portion. When the light-receiving device 110S is provided, the display portion can have one or both of an imaging function and a sensing function in addition to an image display function. Specifically, the display portion can be used as an image sensor or a touch sensor. That is, the display portion can detect light, and thus can capture an image or detect an object (such as a finger, a hand, or a pen).

[0315] Furthermore, in the display device of one embodiment of the present invention, the light-emitting device 110 can be used as a light source for a sensor. In this case, when light emitted from the light-emitting device 110 included in the display portion of the display device is reflected (or scattered) by an object, the light-receiving device 110S can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0316] According to the above-described structure, a light-receiving unit and a light source do not need to be provided separately from the display device. For example, a biometric authentication device or a capacitive touch panel for scrolling or the like does not need to be provided separately in the electronic device. Therefore, by using the display device of one embodiment of the present invention, the number of components in the electronic device can be reduced, and an electronic device with reduced manufacturing cost can be provided.

[0317] Specifically, in a display device of one embodiment of the present invention, an organic light-emitting device can be used as the light-emitting device 110, and an organic photodiode can be used as the light-receiving device 110S. The organic light-emitting device and the organic photodiode can be formed over the same substrate.

[0318] In a display device having the light-emitting device 110 and the light-receiving device 110S in the display section, the pixels have a light-receiving function, so that it is possible to detect an object while displaying an image. For example, it is possible to use some of the sub-pixels of the display device as light sources and display an image with the remaining sub-pixels.

[0319] When the light receiving device 110S is used as an image sensor, the display device can capture an image using the light receiving device. For example, the image sensor can capture an image for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0320] Furthermore, by using an image sensor, it is possible to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of a user of a wearable device equipped with a display device. Therefore, the wearable device can be equipped with a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelid.

[0321] The light receiving device 110S can also be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).

[0322] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). The touch sensor can detect the object by contacting the display device with the object. Furthermore, the near-touch sensor can detect the object even if the object does not touch the display device. For example, it is preferable that the configuration can detect the object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0323] 18C to 18E includes a layer 353 in which a light-receiving device is provided, a functional layer 355, and a layer 357 in which a light-emitting device is provided, between a substrate 351 and a substrate 359. Fig. 18C shows a structure related to a touch sensor, and Fig. 18D shows a structure related to a near-touch sensor.

[0324] The functional layer 355 has a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with one or more of a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, etc. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without a switch or a transistor may be used.

[0325] 18C and 18D , light emitted by a light-emitting device in layer 357 where the light-emitting device is provided is reflected by finger 352 that touches or comes close to display device 100, and the reflected light is detected by a light-receiving device in layer 353 where the light-receiving device is provided. This makes it possible to detect that finger 352 has touched or come close to display device 100.

[0326] FIG. 18E shows an example of detecting information about the periphery, surface, or interior of a person's eye (number of blinks, eyeball movement, eyelid movement, etc.).

[0327] This embodiment mode can be combined with other embodiment modes as appropriate.

[0328] 19 and 20, a layout of a light-emitting device according to one embodiment of the present invention will be described. In FIG. 19 and 20, a red light-emitting device can have a single structure, and a blue light-emitting device can have a tandem structure. In addition, a green light-emitting device can have a single structure or a tandem structure.

[0329] [Layout] In this embodiment, a pixel layout different from that of the above-described embodiment will be mainly described. The top surface shapes of the sub-pixels shown in Figures 19 and 20 correspond to the top surface shapes of the light-emitting regions (or light-receiving regions). Note that examples of the top surface shapes of the sub-pixels include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, shapes of polygons with rounded corners, ellipses, and circles.

[0330] The pixel 10 shown in Figure 19A is composed of three subpixels: subpixels 11a, 11b, and 11c. The pixel 10 shown in Figure 19A can be called an S-stripe arrangement, in which subpixels 11a and 11b are arranged side by side, and subpixel 11c is adjacent to them. In this way, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device a subpixel has, the smaller its size can be. Subpixels with a tandem structure can be smaller in size than subpixels with a single structure.

[0331] The pixel 10 shown in Figure 19B has a subpixel 11a having a substantially triangular top surface shape with rounded corners, a subpixel 11b having a substantially triangular top surface shape with rounded corners, and a subpixel 11c having a substantially rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 11a has a larger light-emitting area than the subpixel 11b. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device a subpixel has, the smaller its size can be. Subpixels with a tandem structure can be smaller in size than subpixels with a single structure.

[0332] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 19C. Fig. 19C shows an example in which a pixel 124a having sub-pixels 11a and 11b and a pixel 124b having sub-pixels 11b and 11c are arranged alternately.

[0333] 19D to 19F are arranged in a delta configuration. Pixel 124a has two subpixels (subpixels 11a and 11b) in the top row (first row) and one subpixel (subpixel 11c) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 11c) in the top row (first row) and two subpixels (subpixels 11a and 11b) in the bottom row (second row).

[0334] Figure 19D shows an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 19E shows an example in which each sub-pixel has a circular top surface shape, and Figure 19F shows an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0335] In Figure 19F, each subpixel is arranged inside a closely packed hexagonal region. Each subpixel is arranged so that it is surrounded by six other subpixels when focusing on one subpixel. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 11a, three subpixels 11b and three subpixels 11c are arranged alternately so as to surround it.

[0336] 19G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the column direction (for example, subpixels 11a and 11b, or subpixels 11b and 11c) are misaligned.

[0337] 19A to 19G, it is preferable that, for example, subpixel 11a be subpixel R that emits red light, subpixel 11b be subpixel G that emits green light, and subpixel 11c be subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, subpixel 11b may be subpixel R that emits red light, and subpixel 11a may be subpixel G that emits green light.

[0338] In lithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0339] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, an organic layer is processed using a resist mask. The resist film formed on the organic layer needs to be cured at a temperature lower than the heat resistance temperature of the organic layer. Therefore, depending on the heat resistance temperature of the material for the organic layer and the curing temperature of the resist material, the resist film may not be sufficiently cured. A resist film that is not sufficiently cured may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the organic layer, i.e., the top surface shape of the light-emitting region, may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the organic layer.

[0340] In order to form the top surface of the organic layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0341] As shown in Figures 20A to 20I, a pixel can be configured to have four types of sub-pixels.

[0342] The pixel 10 shown in FIGS. 20A to 20C is configured in a stripe arrangement.

[0343] Figure 20A is an example in which each subpixel has a rectangular top surface shape, Figure 20B is an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 20C is an example in which each subpixel has an elliptical top surface shape.

[0344] The pixels 10 shown in FIGS. 20D to 20F are arranged in a matrix.

[0345] Figure 20D is an example in which each sub-pixel has a square top surface shape, Figure 20E is an example in which each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 20F is an example in which each sub-pixel has a circular top surface shape.

[0346] 20G has three subpixels (subpixels 11a, 11b, and 11c) in the top row (first row) and one subpixel (subpixel 11d) in the bottom row (second row). In other words, pixel 10 has subpixel 11a in the left column (first column), subpixel 11b in the center column (second column), subpixel 11c in the right column (third column), and subpixel 11d across these three columns.

[0347] The pixel 10 shown in FIG. 20H has three subpixels (subpixels 11a, 11b, and 11c) in the top row (first row) and three subpixels 11d in the bottom row (second row). In other words, the pixel 10 has subpixels 11a and 11d in the left column (first column), subpixels 11b and 11d in the center column (second column), and subpixels 11c and 11d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 20H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0348] 20I has subpixel 11a in the top row (first row), subpixel 11b in the center row (second row), subpixel 11c across the first and second rows, and one subpixel (subpixel 11d) in the bottom row (third row). In other words, pixel 10 has subpixels 11a and 11b in the left column (first column), subpixel 11c in the right column (second column), and subpixel 11d across these two columns.

[0349] The pixel 10 shown in FIGS. 20A to 20I is composed of four sub-pixels 11a, 11b, 11c, and 11d.

[0350] The sub-pixels 11a, 11b, 11c, and 11d can be light-emitting devices that emit different colors, such as sub-pixels of four colors R, G, B, and white (W), sub-pixels of four colors R, G, B, and Y, or sub-pixels of R, G, B, and infrared (IR).

[0351] 20A to 20I , it is preferable that, for example, subpixel 11a be subpixel R that emits red light, subpixel 11b be subpixel G that emits green light, subpixel 11c be subpixel B that emits blue light, and subpixel 11d be subpixel W that emits white light, subpixel Y that emits yellow light, or subpixel IR that emits near-infrared light. With such a configuration, the pixel 10 shown in FIGS. 20G and 20H has a stripe layout of R, G, and B, thereby improving display quality. Furthermore, the pixel 10 shown in FIG. 20I has a so-called S-stripe layout of R, G, and B, thereby improving display quality.

[0352] The pixel 10 may also have sub-pixels that include light-receiving devices.

[0353] In each pixel 10 shown in FIGS. 20A to 20I, any one of the subpixels 11a to 11d may be a subpixel having a light-receiving device.

[0354] 20A to 20I , it is preferable that, for example, the subpixel 11a is a subpixel R that emits red light, the subpixel 11b is a subpixel G that emits green light, the subpixel 11c is a subpixel B that emits blue light, and the subpixel 11d is a subpixel S that has a light-receiving device 110S. With this configuration, the pixels 10 shown in FIGS. 20G and 20H have a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 10 shown in FIG. 20I has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0355] The wavelength of light detected by the subpixel S having the light receiving device is not particularly limited. The subpixel S can be configured to detect either or both of visible light and infrared light.

[0356] As shown in Figures 20J and 20K, a pixel can be configured to have five types of sub-pixels.

[0357] 20J has three subpixels (subpixels 11a, 11b, and 11c) in the top row (first row) and two subpixels (subpixels 11d and 11e) in the bottom row (second row). In other words, pixel 10 has subpixels 11a and 11d in the left column (first column), subpixel 11b in the center column (second column), subpixel 11c in the right column (third column), and subpixel 11e from the second column to the third column.

[0358] 20K has subpixel 11a in the top row (first row), subpixel 11b in the middle row (second row), subpixel 11c across the first and second rows, and two subpixels (subpixels 11d and 11e) in the bottom row (third row). In other words, pixel 10 has subpixels 11a, 11b, and 11d in the left column (first column), and subpixels 11c and 11e in the right column (second column).

[0359] 20J and 20K, it is preferable that, for example, subpixel 11a is a subpixel R that emits red light, subpixel 11b is a subpixel G that emits green light, and subpixel 11c is a subpixel B that emits blue light. In this configuration, the pixel 10 shown in Fig. 20J has a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 10 shown in Fig. 20K has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0360] 20J and 20K, it is preferable to use a subpixel S having a light-receiving device in at least one of the subpixels 11d and 11e. When a light-receiving device is used in both the subpixels 11d and 11e, the configurations of the light-receiving devices may be different from each other. For example, the wavelength ranges of light detected may be at least partially different from each other. Specifically, one of the subpixels 11d and 11e may have a light-receiving device that mainly detects visible light, and the other may have a light-receiving device that mainly detects infrared light.

[0361] 20J and 20K, it is preferable that one of the subpixels 11d and 11e is a subpixel S having a light-receiving device, and the other is a subpixel having a light-emitting device that can be used as a light source. For example, it is preferable that one of the subpixels 11d and 11e is a subpixel IR that emits infrared light, and the other is a subpixel S having a light-receiving device that detects infrared light.

[0362] In a pixel having sub-pixels R, G, B, IR, and S, an image can be displayed using the sub-pixels R, G, and B, while the sub-pixel IR can be used as a light source to detect reflected infrared light emitted by the sub-pixel IR at the sub-pixel S.

[0363] As described above, the display device of one embodiment of the present invention can employ various layouts for a pixel having a subpixel including a light-emitting device. Furthermore, the display device of one embodiment of the present invention can employ a pixel having both a light-emitting device and a light-receiving device. In this case, various layouts can also be employed.

[0364] This embodiment mode can be combined with other embodiment modes as appropriate.

[0365] Embodiment 5 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0366] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type AR device.

[0367] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0368] 21A shows a perspective view of a display module 280. The display module 280 includes a display device 100F and an FPC 290. The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display area 281. The display area 281 is an area where an image is displayed.

[0369] 21B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel driving circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel driving circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 and the like by a wiring portion 286 composed of a plurality of wirings.

[0370] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 21B. The various configurations described in the previous embodiments can be applied to the pixel 284a, and the pixel 284a has sub-pixels 11R, 11G, and 11B.

[0371] The pixel driving circuit unit 283 has pixel circuits 283a corresponding to the pixels 284a. One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source.

[0372] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a. For example, it preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, it may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0373] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0374] The display module 280 can be configured such that one or both of the pixel driving circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby increasing the effective display area ratio or aperture ratio of the display region 281. For example, the aperture ratio of the display region 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density.

[0375] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display area 281, so even if the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0376] 22 shows a cross-sectional view of the display device 100F. The display device 100F includes a substrate 301, a transistor 310, a capacitor 240, a red light-emitting device 110R, a green light-emitting device 110G, and a blue light-emitting device 110B. The red, green, and blue light-emitting devices described in Embodiment 1 can be used as the light-emitting devices used in the display device 100F. For example, the red light-emitting device 110R has a single structure, and the blue light-emitting device 110B has a tandem structure, and the tandem structure includes a charge generation layer 153. The green light-emitting device 110G may have either a single structure or a tandem structure.

[0377] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0378] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0379] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0380] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0381] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0382] Note that it is preferable to provide a conductive layer surrounding the outside of the display region 281 (or the pixel portion 284) using any conductive layer included in the transistor. The conductive layer can also be called a guard ring. By providing the guard ring, it is possible to prevent elements such as transistors and light-emitting devices from being damaged by charging due to ESD (electrostatic discharge) or plasma-based processes.

[0383] An insulating layer 105 is provided to cover the capacitor 240. A recess 103 may be provided in the insulating layer 105. A conductive layer 256 may be formed in the insulating layer 105 so as to be electrically connected to the conductive layer 241 of the capacitor 240.

[0384] The insulating layer 105 and the insulating layer 106 may contain an inorganic material. If the recess 103 can be formed in the insulating layer 105, the insulating layer 106 may be omitted. The insulating layer 106 is provided on the insulating layer 105, and the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B are provided on the insulating layer 106. An insulating layer 126 is provided in the region between adjacent light-emitting devices. The insulating layer 126 may contain an organic material and is provided in a position overlapping the recess 103. Furthermore, insulating layers 125a, 125b, and 125c are provided in the recess 103, and an insulating layer 127 is provided on the insulating layers 125a, 125b, and 125c. An insulating layer 125a is located on the organic layer 112R of the red light-emitting device 110R, an insulating layer 125b is located on the organic layer 112G of the green light-emitting device 110G, and an insulating layer 125c is located on the organic layer 112B of the blue light-emitting device 110B. The insulating layers 125a, 125b, and 125c may contain inorganic materials.

[0385] The organic layer 112B has a tandem structure, which can improve the reliability of the light-emitting device 110B and the display device. The organic layer 112R has a single structure. The organic layer 112G may have either a single structure or a tandem structure.

[0386] The lower electrode 111R, the lower electrode 111G, and the lower electrode 111B are electrically connected to one of the source and the drain of the transistor 310 via the insulating layer 243, the conductive layer 256 formed in the insulating layer 105, etc., and the plug 271.

[0387] A protective layer 121 is provided on the red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B. A substrate 120 is bonded to the protective layer 121 with a resin layer 122.

[0388] 23 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0389] The display device 100G has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0390] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an insulating film made of the same inorganic material as the protective layer 121.

[0391] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be an insulating film made of the same inorganic material as the protective layer 121.

[0392] Furthermore, a conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0393] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0394] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0395] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0396] [Display Device 100H] A display device 100H shown in FIG. 24 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0397] 24 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0398] [Display Device 100I] The display device 100I shown in FIG. 25 differs from the display device 100F mainly in the configuration of the transistors.

[0399] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0400] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0401] The substrate 331 may be an insulating substrate or a semiconductor substrate.

[0402] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0403] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0404] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0405] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0406] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0407] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0408] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0409] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0410] [Display Device 100J] A display device 100J illustrated in FIG. 26 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0411] The transistor 320A, the transistor 320B, and the surrounding configurations thereof can refer to the display device 100I.

[0412] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0413] [Display Device 100K] A display device 100K illustrated in FIG. 27 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0414] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0415] The transistor 320 can be used as a transistor included in a pixel driver circuit. The transistor 310 can be used as a transistor included in a pixel driver circuit or a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel driver circuit. The transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit or a memory circuit.

[0416] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0417] [Display Device 100L] FIG. 28 shows a perspective view of the display device 100L, and FIG. 29A shows a cross-sectional view of the display device 100L. The display device 100L has a display area 162, a connection portion 140, a circuit 164, wiring 165, etc. The display device 100L is mounted with an IC 173 and an FPC 172, and therefore can also be referred to as a display module having the display device 100L, an IC (integrated circuit), and an FPC. The display device 100L has a configuration in which a substrate 152 and a substrate 151 are bonded together, and in FIG. 28, the substrate 152 is clearly indicated by a dashed line. The display area 162 has a light receiving device 110S.

[0418] The connection portion 140 is provided outside the display area 162. The connection portion 140 can be provided along one or more sides of the display area 162. There may be one or more connection portions 140. FIG. 28 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display area. The connection portion 140 electrically connects the common electrode 113x of the light-emitting device and the conductive layer 123, and can supply a potential to the common electrode.

[0419] The circuit 164 can be, for example, a scan line driver circuit, and includes a transistor 201. In the circuit 164, an insulating layer 105 having a recess is located, and an insulating layer 125d, an insulating layer 126, and a protective layer 121 are located in a position overlapping with the recess. Since a lower electrode is not located in the circuit 164, the insulating layer 106 does not need to be provided. A structure without the insulating layer 106 is preferable because moisture in the insulating layer 105 is easily released. Furthermore, to ensure sufficient flatness above the transistor 201, the insulating layer 105 does not need to have a recess in the circuit 164. The insulating layer 105 preferably contains an organic material, and the insulating layer 106 preferably contains an inorganic material.

[0420] The wiring 165 has a function of supplying signals and power to the display region 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173. The wiring 165 can be a conductive layer formed as the source or drain of a transistor.

[0421] 29A shows an example in which an FPC 172 is provided on a substrate 151. An IC may be mounted on the FPC 172 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. The IC may include a scanning line driver circuit or a signal line driver circuit. Note that the display device 100L may not include an IC.

[0422] FIG. 29A shows an example of a cross section of the display device 100L, in which a part of the region including the FPC 172, a part of the circuit 164, a part of the display region 162, and a part of the connection portion 140 are cut away.

[0423] In Figure 29A, display device 100L has transistor 201, transistor 205, red light-emitting device 110R, green light-emitting device 110G, blue light-emitting device, light-receiving device 110S, etc. between substrate 151 and substrate 152. As shown in embodiment 1, red light-emitting device 110R has a single structure and blue light-emitting device 110B has a tandem structure, but blue light-emitting device 110B is omitted in Figure 29A. Furthermore, green light-emitting device 110G may have a single structure or a tandem structure. By configuring blue light-emitting device 110B in a tandem structure, the reliability of the display device can be improved.

[0424] The red light-emitting device 110R includes a conductive layer 115R on an insulating layer 106R, a resin layer 128R filling the recesses of the conductive layer 115R, a conductive layer 117R on the resin layer 128R, and a conductive layer 119R on the conductive layer 117R. The conductive layers 115R, 117R, and 119R can all be referred to as lower electrodes. The edge of the conductive layer 115R is preferably flush with the edge of the conductive layer 117R. The edge of the conductive layer 119R preferably extends beyond the edges of the conductive layer 115R and the conductive layer 117R and is preferably flush with the edge of the insulating layer 106R.

[0425] The green light-emitting device 110G includes a conductive layer 115G on an insulating layer 106G, a resin layer 128G filling the recesses of the conductive layer 115G, a conductive layer 117G on the resin layer 128G, and a conductive layer 119G on the conductive layer 117G. All of the conductive layers 115G, 117G, and 119G can be referred to as lower electrodes. The edge of the conductive layer 115G is preferably aligned with the edge of the conductive layer 117G. The edge of the conductive layer 119G may extend beyond the edges of the conductive layer 115G and the conductive layer 117G, and is preferably aligned with the edge of the insulating layer 106G.

[0426] The lower electrode of the blue light-emitting device is not shown, but has the same configuration as the lower electrode of the red light-emitting device 110R and the lower electrode of the green light-emitting device 110G.

[0427] The light-receiving device 110S includes, on an insulating layer 106S, a conductive layer 115S, a resin layer 128S filling the recesses of the conductive layer 115S, a conductive layer 117S on the resin layer 128S, and a conductive layer 119S on the conductive layer 117S. The conductive layers 115S, 117S, and 119S can all be referred to as lower electrodes. The edge of the conductive layer 115S is preferably aligned with the edge of the conductive layer 117S. The edge of the conductive layer 119S may extend beyond the edges of the conductive layer 115S and the conductive layer 117S, and is preferably aligned with the edge of the insulating layer 106S.

[0428] The conductive layer 115R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213. That is, the lower electrode of the light-emitting device is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213.

[0429] The conductive layer 115G is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213. That is, the lower electrode of the light-emitting device is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213.

[0430] The conductive layer 115S is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213. That is, the lower electrode of the light-receiving device is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layers 106, 105, 215, and 213.

[0431] The resin layers 128R and 128G have the function of flattening the recesses of the conductive layers 115R and 115G. Therefore, the conductive layers 117R and 117G located on the resin layers 128R and 128G can have flat regions, which can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0432] The resin layers 128R, 128G, and 128S may be insulating layers or conductive layers. Various inorganic insulating materials, organic insulating materials, and conductive materials may be used for the resin layers 128R, 128G, and 128S, as appropriate. In particular, the resin layers 128R, 128G, and 128S are preferably formed using an insulating material, and more preferably using an organic insulating material.

[0433] The top and side surfaces of the conductive layers 119R, 119G, and 119S are covered with the organic layers 112R and 112G and the active layer. Therefore, the entire area where the conductive layers 119R, 119G, and 119S are provided can be used as the light-emitting area or light-receiving area of ​​the red light-emitting device 110R and the green light-emitting device 110G, thereby increasing the aperture ratio of the pixel or the light-receiving area. The same configuration as the red light-emitting device 110R and the green light-emitting device 110G can also be applied to the blue light-emitting device.

[0434] Although not shown, parts of the organic layers 112R and 112G may be located in the recesses 103. Part of the active layer may be located in the recesses 103. The same applies to the blue light-emitting device as to the red light-emitting device 110R and the green light-emitting device 110G.

[0435] A portion of the top surface and the side surfaces of the organic layers 112R and 112G are covered with insulating layers 125a and 125b, respectively. A portion of the top surface and the side surfaces of the active layer are also covered with insulating layer 125s. The insulating layers 125a, 125b, 125c, 125s, and 125d may contain an inorganic material.

[0436] An insulating layer 126 is positioned between the red light-emitting device 110R and the green light-emitting device 110G so as to overlap the recesses of the insulating layers 125a and 125b. The insulating layer 126 may include an organic material, and the upper surface of the insulating layer 126 may be higher than the upper surfaces of the organic layers 112R and 112G. A common layer 114 is provided on the organic layer 112R, the organic layer 112G, and the insulating layer 126, and a common electrode 113x is provided on the common layer 114. The common layer 114 and the common electrode 113x are each a continuous film provided in common to multiple light-emitting devices.

[0437] The red light-emitting device 110R, the green light-emitting device 110G, and the blue light-emitting device 110B (not shown) have a top-emission structure in which light is emitted toward the common electrode 113x. Light from the red light-emitting device 110R, the green light-emitting device 110G, or the blue light-emitting device 110B (not shown) can be used as a light source for the light-receiving device 110S. The wavelength from the green light-emitting device 110G is preferable for the light source. The display device of one embodiment of the present invention may have a bottom-emission structure in which light is emitted toward the lower electrode. In the case of a bottom-emission structure, the light-receiving device may be omitted.

[0438] A protective layer 121 is provided on the red light-emitting device 110R, the green light-emitting device 110G, and the light-receiving device 110S. A protective layer 121 is also provided on the blue light-emitting device. The protective layer 121 and the substrate 152 are bonded via an adhesive layer 142. A light-shielding layer 155 is provided on the substrate 152. A color filter or a color conversion layer may be disposed on the substrate 152 so as to overlap the red light-emitting device 110R and the green light-emitting device 110G. A solid sealing structure, a hollow sealing structure, or the like may be applied to seal the light-emitting devices. In FIG. 29A , the space between the substrates 152 and 151 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0439] The protective layer 121 is preferably provided in at least the display region 162 and is provided so as to cover the entire display region 162. The protective layer 121 is preferably provided so as to cover not only the display region 162 but also the connection portion 140 and the circuit 164. The protective layer 121 is preferably provided up to the edge of the display device 100G. On the other hand, the connection portion 204 has a portion where the protective layer 121 is not provided in order to electrically connect the FPC 172 and the conductive layer 166.

[0440] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via conductive layers 166, 167, and 168 and a connection layer 242. The conductive layer 167 is a conductive film obtained by processing the same conductive film as the conductive layers 115R and 115G. The conductive layer 166 is a conductive film obtained by processing the same conductive film as the conductive layers 117R and 117G. The conductive layer 168 is a conductive film obtained by processing the same conductive film as the conductive layers 119R and 119G. If a recess is formed in the surface of the conductive layer 167, the recess may be filled with a resin layer. The insulating layer 125e, the insulating layer 126, and the protective layer 121 are located in this order on the conductive layer 168, and openings are formed in these insulating layers to expose the top surface of the conductive layer 168. The end of the insulating layer 126 may be covered with the protective layer 121. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242 .

[0441] For example, after the protective layer 121 is formed on the entire surface of the display device 100L, a mask is used to remove the area of ​​the protective layer 121 that overlaps with the conductive layer 168, thereby exposing the conductive layer 168.

[0442] Furthermore, the upper surface of the conductive layer 168 may be covered with a mask so that the protective layer 121 is not formed on the conductive layer 168. As the mask, for example, a metal mask (area metal mask) or an adhesive or adhesive tape or film may be used. By forming the protective layer 121 with the mask in place and then removing the mask, the conductive layer 168 can be kept exposed even after the protective layer 121 is formed.

[0443] By using such a method, a region where the protective layer 121 is not provided can be formed in the connection portion 204 , and the conductive layer 168 and the FPC 172 can be electrically connected to each other through the connection layer 242 in this region.

[0444] The connection portion 140 includes an insulating layer 105 having a recess, an insulating layer 106 provided on the insulating layer 105, and a conductive layer 123 provided on the insulating layer 106. The conductive layer 123 has a layered structure including a conductive film obtained by processing the same conductive film as the conductive layers 115R and 115G, a conductive film obtained by processing the same conductive film as the conductive layers 117R and 117G, and a conductive film obtained by processing the same conductive film as the conductive layers 119R and 119G. A common layer 114 is provided on the conductive layer 123, and a common electrode 113x is provided on the common layer 114. The conductive layer 123 and the common electrode 113x are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 113x are in direct contact with each other and are electrically connected.

[0445] The display device 100L is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 113x) contains a material that transmits visible light.

[0446] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0447] An insulating layer 211, an insulating layer 213, and an insulating layer 215 are provided in this order over the substrate 151. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 105 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0448] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0449] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0450] An organic insulating layer is suitable for the insulating layer 105, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 105 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 105 preferably functions as an etching protection layer. This prevents the formation of recesses in the insulating layer 105 during processing of the conductive layer 117R, conductive layer 117G, conductive layer 117B, etc. Alternatively, recesses may be formed in the insulating layer 105 during processing of the conductive layer 117R, conductive layer 117G, conductive layer 117B, etc. In FIG. 29A , the recesses 103 in the insulating layer 105 are formed through a process different from the processing of the conductive layer 117R, conductive layer 117G, conductive layer 117B, etc.

[0451] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0452] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0453] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0454] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor, a single crystalline semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single crystalline semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0455] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0456] Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably contains two or three elements selected from indium, element M, and zinc. The element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0457] In particular, as the metal oxide used for the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0458] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:4 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2:3 or thereabouts, or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 4:2:4.1 or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 5:1:3 or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 5:1:6 or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 5:1:7 or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 5:1:8 or a ratio of the number of atoms in the vicinity thereof, In:M:Zn = 6:1:6 or a ratio of the number of atoms in the vicinity thereof, and In:M:Zn = 5:2:5 or a ratio of the number of atoms in the vicinity thereof. Note that the term "nearby atomic ratio" includes a range of ±30% of the desired atomic ratio.

[0459] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or an atomic ratio thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or an atomic ratio thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or an atomic ratio thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0460] The semiconductor layer may have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having an atomic ratio of In:M:Zn=1:3:4 or a similar ratio and a second metal oxide layer having an atomic ratio of In:M:Zn=1:1:1 or a similar ratio provided on the first metal oxide layer is suitable. Gallium or aluminum is particularly preferred as the element M.

[0461] Alternatively, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0462] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0463] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0464] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0465] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0466] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0467] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a greater number of gray levels to be displayed in the pixel circuit.

[0468] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0469] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0470] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display region 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display region 162 may all have the same structure or may have two or more types.

[0471] All of the transistors in the display region 162 may be OS transistors, all of the transistors in the display region 162 may be Si transistors, or some of the transistors in the display region 162 may be OS transistors and the rest may be Si transistors.

[0472] For example, by using both an LTPS transistor and an OS transistor in the display region 162, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. As a more preferred example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings and to use an LTPS transistor as a transistor for controlling current.

[0473] For example, one of the transistors in the display region 162 functions as a transistor for controlling the current flowing through the light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0474] On the other hand, another transistor included in the display region 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0475] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0476] A display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure significantly reduces leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The extremely low leakage current that may flow through the transistor and lateral leakage current between the light-emitting devices significantly reduces light leakage during black display (so-called floating black).

[0477] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between the light-emitting devices (for example, organic layers shared between the light-emitting devices, also called common layers) are configured to be separated, thereby eliminating side leakage or making it possible to greatly reduce side leakage.

[0478] 29B and 29C show other examples of transistor configurations.

[0479] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0480] 29B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0481] 29C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 29C . In FIG. 29C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0482] It is preferable to provide a light-shielding layer 155 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 155 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 164, etc. Various optical members can be disposed on the outside of the substrate 152.

[0483] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152 .

[0484] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0485] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0486] This embodiment mode can be combined with other embodiment modes as appropriate.

[0487] Embodiment 6 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0488] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0489] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0490] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0491] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0492] The electronic device of this embodiment may have a sensor (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0493] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0494] 30A to 30D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device with the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0495] The electronic device 700A shown in FIG. 30A and the electronic device 700B shown in FIG. 30B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0496] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can provide an extremely high-definition display.

[0497] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0498] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0499] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0500] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0501] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0502] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0503] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0504] The electronic device 800A shown in Figure 30C and the electronic device 800B shown in Figure 30D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0505] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0506] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0507] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0508] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0509] The mounting unit 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 30C and other figures, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0510] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0511] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0512] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0513] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0514] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 30A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 30C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0515] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 30B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0516] Similarly, electronic device 800B shown in Fig. 30D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0517] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0518] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0519] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0520] The electronic device 6500 shown in FIG. 31A is a portable information terminal that can be used as a smartphone.

[0521] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0522] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0523] FIG. 31B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0524] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0525] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0526] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0527] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0528] 31C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0529] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0530] 31C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0531] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0532] 31D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0533] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0534] 31E and 31F show an example of digital signage.

[0535] 31E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0536] 31F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0537] 31E and 31F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0538] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0539] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0540] 31E and 31F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0541] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0542] The electronic device shown in Figures 32A to 32G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0543] 32A to 32G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0544] The electronic devices shown in Figures 32A to 32G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0545] Details of the electronic device shown in Figures 32A to 32G will be described below.

[0546] FIG. 32A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 32A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0547] 32B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0548] 32C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0549] FIG. 32D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0550] 32E to 32G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 32E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 32G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 32F is a perspective view of a state in the process of changing from one of FIGS. 32E and 32G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0551] This embodiment mode can be combined with other embodiment modes as appropriate.

[0552] 103: recess, 105: insulating layer, 106: insulating layer, 107: protrusion, 110: light-emitting device, 111: lower electrode, 112: organic layer, 113: upper electrode, 125: insulating layer,

Claims

1. a first insulating layer and a second insulating layer; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region covering a portion of a lower surface of the first insulating layer, a region covering a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device has a tandem structure; The display device, wherein the second light-emitting device has a single structure.

2. a first insulating layer and a second insulating layer; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a portion of a lower surface of the first insulating layer, a region in contact with a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device has a tandem structure; The display device, wherein the second light-emitting device has a single structure.

3. a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protruding portion overlapping the recess; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a fourth insulating layer having a region covering a part of a side surface of the first light-emitting device, a region covering a lower surface of the first protrusion, a region covering a lower surface of the second protrusion, and a region covering a part of a side surface of the second light-emitting device; the first light-emitting device has a tandem structure; The display device, wherein the second light-emitting device has a single structure.

4. a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protruding portion overlapping the recess; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a lower surface of the first protruding portion, a region in contact with a lower surface of the second protruding portion, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device has a tandem structure; The display device, wherein the second light-emitting device has a single structure.

5. a first insulating layer and a second insulating layer; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region covering a portion of a lower surface of the first insulating layer, a region covering a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device comprises a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer; The second light-emitting device comprises a third light-emitting unit.

6. a first insulating layer and a second insulating layer; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a third insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a portion of a lower surface of the first insulating layer, a region in contact with a portion of a lower surface of the second insulating layer, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device comprises a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer; The second light-emitting device comprises a third light-emitting unit.

7. a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protruding portion overlapping the recess; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a fourth insulating layer having a region covering a part of a side surface of the first light-emitting device, a region covering a lower surface of the first protrusion, a region covering a lower surface of the second protrusion, and a region covering a part of a side surface of the second light-emitting device; the first light-emitting device comprises a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer; The second light-emitting device comprises a third light-emitting unit.

8. a first insulating layer having a recess; a second insulating layer located on the first insulating layer and having a first protrusion overlapping the recess; a third insulating layer located on the first insulating layer and having a second protruding portion overlapping the recess; a first light emitting device located on the first insulating layer; a second light emitting device located on the second insulating layer; a fourth insulating layer having a region covering a portion of a side surface of the first light-emitting device, a region in contact with a lower surface of the first protruding portion, a region in contact with a lower surface of the second protruding portion, and a region covering a portion of a side surface of the second light-emitting device; the first light-emitting device comprises a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer; The second light-emitting device comprises a third light-emitting unit.

9. In any one of claims 1 to 8, the first light emitting device has a first bottom electrode; the second light emitting device has a second bottom electrode; the first lower electrode is provided on and in contact with the first insulating layer; an end of the first lower electrode is recessed from an end of the first insulating layer; the second lower electrode is provided on and in contact with the second insulating layer, An end of the second lower electrode is recessed from an end of the second insulating layer.

10. In any one of claims 5 to 8, the charge generating layer comprises lithium; Display device.

11. In any one of claims 1, 2, 5 and 6, the first insulating layer to the third insulating layer each contain an inorganic material; Display device.

12. In any one of claims 3, 4, 7 and 8, the first insulating layer comprises an organic material; the second insulating layer to the fourth insulating layer each contain an inorganic material; Display device.

13. In any one of claims 3, 4, 7 and 8, the first insulating layer to the fourth insulating layer each include an inorganic material; Display device.