Capacitor

Abstract

A capacitor 1 comprises: a capacitor layer 10 that includes a first electrode layer (e.g., anode plate 11) and a second electrode layer (e.g., cathode layer 12) facing each other in the thickness direction with a dielectric layer 13 therebetween; and a coaxial through-hole conductor 30 that is provided so as to penetrate the capacitor layer 10 in the thickness direction of the capacitor layer 10. The coaxial through-hole conductor 30 includes a first through-hole conductor 31 electrically connected to the first electrode layer and a second through-hole conductor 32 electrically connected to the second electrode layer. The first through-hole conductor 31 is electrically connected to the end surface of the first electrode layer. The second through-hole conductor 32 is provided inside the first through-hole conductor 31, and the first through-hole conductor 31 and the second through-hole conductor 32 are insulated from each other.

Description

capacitor

[0001] The present invention relates to a capacitor.

[0002] In recent years, semiconductor packages have become mainstream with multilayer structures in which multiple substrate layers are stacked. In addition, it has become common to provide signal transmission lines via through electrodes to supply signals or power to semiconductor chips.

[0003] In high-performance semiconductor devices intended for applications such as AI (Artificial Intelligence) and data centers, the signal transmission lines described above are becoming more complex, and the power supply capacity is increasing along with the increased performance.

[0004] As a result, a high power (high current) supply via the through electrode is required, and therefore the through electrode is also required to have a high current capacity, that is, to be able to pass a large amount of current.

[0005] Furthermore, when electronic components are embedded in a substrate, the area for embedding the electronic components must be taken into consideration, which further restricts the area for providing the through electrodes, making it even more difficult to ensure current capacity.

[0006] Patent Document 1 discloses a module for use in a semiconductor composite device that supplies a load with a DC voltage regulated by a voltage regulator including a semiconductor active element. The module includes a capacitor layer including at least one capacitor portion forming a capacitor, a connection terminal used for electrical connection to at least one of the voltage regulator and the load, and a through-hole conductor formed to penetrate the capacitor portion in the thickness direction of the capacitor layer. The capacitor is electrically connected to at least one of the load and the voltage regulator via the through-hole conductor.

[0007] International Publication No. 2021 / 241325

[0008] An example of a capacitor layer in which a plurality of capacitor sections are arranged in a plane is shown in Figure 21 of Patent Document 1. In Figure 21 of Patent Document 1, each capacitor section is provided with a first through-hole conductor electrically connected to the anode of the capacitor section and a second through-hole conductor electrically connected to the cathode of the capacitor section.

[0009] As shown in FIGS. 17 to 20 of Patent Document 1, it is necessary to ensure an insulating region around the through-hole conductor that constitutes the through electrode.

[0010] In the above configuration, possible methods for increasing the current capacity of the through electrodes include (1) increasing the number of through electrodes, and (2) increasing the volume of the through electrodes (for example, increasing the diameter of the through electrodes). However, these methods also increase the insulating area required to form the through electrodes.

[0011] Since the insulating region is a region that does not exhibit capacitance, as the insulating region becomes larger, the region that exhibits capacitance becomes smaller. As such, there is a trade-off between current capacity and capacitance, making it difficult to simultaneously achieve the desired current capacity and capacitance.

[0012] An object of the present invention is to provide a capacitor that can reduce the area that does not exhibit capacitance even when a through-hole conductor that constitutes a through electrode is provided.

[0013] The capacitor of the present invention comprises a capacitor layer including a first electrode layer and a second electrode layer opposed to each other in a thickness direction via a dielectric layer, and a coaxial through-hole conductor provided to penetrate the capacitor layer in the thickness direction. The coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer. The first through-hole conductor is electrically connected to an end face of the first electrode layer. The second through-hole conductor is provided inside the first through-hole conductor, and the first and second through-hole conductors are insulated from each other.

[0014] According to the present invention, it is possible to provide a capacitor in which it is possible to reduce the area that does not exhibit capacitance even when a through-hole conductor that constitutes a through electrode is provided.

[0015] FIG. 1 is a cross-sectional view schematically showing an example of a capacitor of the present invention. FIG. 2 is a plan view of the capacitor shown in FIG. 1 taken on the P1 plane. FIG. 3 is a cross-sectional view schematically showing an example of a capacitor according to a comparative embodiment of the present invention, in which first and second through-hole conductors are provided at a distance from each other. FIG. 4 is a plan view of the capacitor according to the comparative embodiment shown in FIG. 3 taken on the P1 plane. FIG. 5 is a plan view schematically showing an example of an area of ​​a region that does not exhibit capacitance in the structure according to the comparative embodiment shown in FIG. 4. FIG. 6 is a plan view schematically showing an example of an area of ​​a region that does not exhibit capacitance in the structure shown in FIG. 2. FIG. 7 is a plan view of the capacitor shown in FIG. 1 taken on the P2 plane. FIG. 8 is a plan view of the capacitor shown in FIG. 1 taken on the P3 plane. FIG. 9 is a plan view of the capacitor shown in FIG. 1 taken on the P4 plane. FIG. 10 is a plan view of the capacitor shown in FIG. 1 taken on the P5 plane. FIG. 11 is a cross-sectional view schematically showing another example of a capacitor of the present invention. FIG. 12 is a plan view of the capacitor shown in FIG. 11 taken on the P1 plane. Fig. 13 is a cross-sectional view schematically showing yet another example of a capacitor of the present invention. Fig. 14 is a view schematically showing a planar layout of the capacitor shown in Fig. 13. Fig. 15 shows, in the planar layout shown in Fig. 14, the relationship between the through-hole conductors and the relationship between each through-hole conductor and the via conductor connected to the second electrode layer. Fig. 16 is a view explaining a method for manufacturing the capacitor shown in Fig. 13, and is a cross-sectional view schematically showing the capacitor at a stage before sealing with an outer sealing layer. Fig. 17 is another view explaining a method for manufacturing the capacitor shown in Fig. 13, and is a cross-sectional view schematically showing the capacitor at a stage after through-holes have been formed in the outer sealing layer.

[0016] The capacitor of the present invention will be described below. However, the present invention is not limited to the following configuration, and can be appropriately modified and applied within the scope of the present invention. Note that a combination of two or more of the individual desirable configurations of the present invention described below also constitutes the present invention.

[0017] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, scale, etc. may differ from those of the actual product.

[0018] FIG. 1 is a cross-sectional view schematically showing an example of a capacitor according to the present invention.

[0019] The capacitor 1 shown in FIG. 1 comprises a capacitor layer 10, a sealing layer 20 that seals the capacitor layer 10, and a coaxial through-hole conductor 30 that is arranged to penetrate the capacitor layer 10 in the thickness direction of the capacitor layer 10.

[0020] The capacitor layer 10 includes a first electrode layer and a second electrode layer that face each other in the thickness direction with a dielectric layer interposed therebetween.

[0021] 1, the first electrode layer is an anode plate 11, and the second electrode layer is a cathode layer 12. In this way, the capacitor layer 10 constitutes an electrolytic capacitor.

[0022] The anode plate 11 has, for example, a core 11A made of metal and a porous portion 11B provided on at least one main surface of the core 11A. A dielectric layer 13 is provided on the surface of the porous portion 11B, and a cathode layer 12 is provided on the surface of the dielectric layer 13.

[0023] The cathode layer 12 includes, for example, a solid electrolyte layer 12A provided on the surface of the dielectric layer 13. The cathode layer 12 preferably further includes a conductor layer 12B provided on the surface of the solid electrolyte layer 12A. The conductor layer 12B includes, for example, a carbon layer 12Ba provided on the surface of the solid electrolyte layer 12A and a copper layer 12Bb provided on the surface of the carbon layer 12Ba.

[0024] The capacitor layer 10 is not limited to an electrolytic capacitor such as a solid electrolytic capacitor, but may be, for example, a ceramic capacitor using barium titanate or the like, or a capacitor using silicon nitride (SiN), silicon dioxide (SiO ２ However, in view of the ability to form a thinner capacitor layer 10 with a relatively large area and the mechanical properties of the capacitor 1, such as rigidity and flexibility, it is preferable to form a capacitor having a base material of a metal such as aluminum as the capacitor layer 10, and more preferably an electrolytic capacitor having a base material of a metal such as aluminum as the capacitor layer 10.

[0025] FIG. 2 is a plan view of the capacitor shown in FIG. 1 taken along plane P1.

[0026] As shown in Figures 1 and 2, the coaxial through-hole conductor 30 includes a first through-hole conductor 31 electrically connected to a first electrode layer (anode plate 11 in the example shown in Figure 1) and a second through-hole conductor 32 electrically connected to a second electrode layer (cathode layer 12 in the example shown in Figure 1).

[0027] In the coaxial through-hole conductor 30, the first through-hole conductor 31 is electrically connected, for example, at its side wall to the end face of the first electrode layer (anode plate 11 in the example shown in FIG. 1), as shown in FIG. 1. This shortens the distance from the first through-hole conductor 31 to the effective capacitive portion of the capacitor layer 10, allowing the design of a capacitor 1 with excellent frequency characteristics.

[0028] In the coaxial through-hole conductor 30, the second through-hole conductor 32 is provided inside the first through-hole conductor 31, and the first through-hole conductor 31 and the second through-hole conductor 32 are insulated from each other. For example, the space between the first through-hole conductor 31 and the second through-hole conductor 32 is filled with an insulating material 22.

[0029] As long as the second through-hole conductors 32 are provided inside the first through-hole conductors 31, the axes of the second through-hole conductors 32 do not have to coincide with the axes of the first through-hole conductors 31. However, as shown in Figures 1 and 2, it is preferable that the axes of the second through-hole conductors 32 coincide with the axes of the first through-hole conductors 31. Here, "coinciding" does not necessarily mean that they do not coincide strictly. For example, when viewed from the thickness direction of the capacitor layer 10, it is sufficient that the distance between the axes of the first through-hole conductors 31 and the second through-hole conductors 32 is within a range of approximately 3% of the diameter of the second through-hole conductors 32.

[0030] The inside of the second through-hole conductor 32 may be filled with a material containing resin. That is, the inside of the second through-hole conductor 32 may be provided with a resin filling portion 24.

[0031] An insulating layer 26 is preferably provided around the first through-hole conductor 31. In the example shown in Figures 1 and 2, the insulating layer 26 is provided between the first through-hole conductor 31 and the cathode layer 12.

[0032] In FIG. 2, the region inside the outer periphery of the insulating layer 26 provided around the first through-hole conductor 31 corresponds to the region that does not exhibit capacitance.

[0033] Fig. 3 is a cross-sectional view schematically illustrating an example of a capacitor according to a comparative example of the present invention, in which a first through-hole conductor and a second through-hole conductor are provided at a distance from each other. Fig. 4 is a plan view of the capacitor according to the comparative example shown in Fig. 3, taken along plane P1.

[0034] In the capacitor 1a shown in FIG. 3, the first through-hole conductor 31 and the second through-hole conductor 32 are provided at a distance from each other.

[0035] The first through-hole conductor 31 is electrically connected, for example, at its side wall to the end face of the first electrode layer (anode plate 11 in the example shown in FIG. 3 ). The space between the second through-hole conductor 32 and the capacitor layer 10 may be filled with an insulating material 22.

[0036] A resin filling portion 24 may be provided inside the first through-hole conductor 31. Similarly, a resin filling portion 24 may be provided inside the second through-hole conductor 32.

[0037] 3 and 4, an insulating layer 26 is preferably provided around the first through-hole conductor 31. Similarly, an insulating layer 26 is preferably provided around the second through-hole conductor 32. In the example shown in FIGS. 3 and 4, the insulating layer 26 is provided between the first through-hole conductor 31 and the cathode layer 12 or between the second through-hole conductor 32 and the cathode layer 12.

[0038] In Figure 4, the sum of the area inside the outer edge of the insulating layer 26 provided around the first through-hole conductor 31 and the area inside the outer edge of the insulating layer 26 provided around the second through-hole conductor 32 corresponds to the area that does not exhibit capacitor capacitance.

[0039] In Figures 2 and 4, when the current capacity (conductor area in Figures 2 and 4) of the first through-hole conductor 31 and the second through-hole conductor 32 are equivalent, arranging the second through-hole conductor 32 inside the first through-hole conductor 31 makes it possible to reduce the area in which no capacitor capacity is exhibited, compared to arranging the first through-hole conductor 31 and the second through-hole conductor 32 apart.

[0040] FIG. 5 is a plan view schematically showing an example of the area of ​​a region that does not exhibit capacitance in the structure according to the comparative example shown in FIG.

[0041] For example, the diameter d of the first through-hole conductor 31 ３１ is 125 μm, and the width w ３１ is 15 μm (area of ​​the first through-hole conductor 31: 5184 μm ２ ), the diameter d of the insulating layer 26 provided around the first through-hole conductor 31 ２６ The diameter d of the second through-hole conductor 32 is 435 μm. ３２ is 125 μm, and the width w ３２is 15 μm (area of ​​the second through-hole conductor 32: 5184 μm ２ ), the diameter d of the insulating material 22 provided around the second through-hole conductor 32 ２２ The diameter d of the insulating layer 26 provided around the insulating material 22 is 255 μm. ２６ When the area S of the region that does not exhibit the capacitance is 565 μm, the area S is: S=π(435 / 2) ２ +π(565 / 2) ２ ≒ 399336 [μm ２ ] is calculated as follows.

[0042] FIG. 6 is a plan view schematically showing an example of the area of ​​a region that does not exhibit capacitance in the structure shown in FIG.

[0043] For example, the diameter d of the second through-hole conductor 32 ３２ is 125 μm, and the width w ３２ is 15 μm (area of ​​the second through-hole conductor 32: 5184 μm ２ ), the diameter d of the insulating material 22 provided around the second through-hole conductor 32 ２２ is 255 μm, and the diameter d ３１ is 270 μm, and the width w ３１ is 7.5 μm (area of ​​the first through-hole conductor 31: 6185 μm ２ ), the diameter d of the insulating layer 26 provided around the first through-hole conductor 31 ２６ When the area S of the region that does not exhibit the capacitance is 580 μm, the area S is: S=π(580 / 2) ２ ≒ 264208 [μm ２ ] is calculated as follows.

[0044] 6, the area S of the region that does not exhibit the required capacitance per pair of the first through-hole conductor 31 and the second through-hole conductor 32 can be reduced by approximately 30% compared to FIG.

[0045] In this way, by providing the second through-hole conductor 32 inside the first through-hole conductor 31, the area density of the coaxial through-hole conductors 30 can be improved in the area where the capacitance is not realized, thereby expanding the area of ​​the effective capacitance part of the capacitor layer 10. Alternatively, by arranging more coaxial through-hole conductors 30, the current capacity can be increased.

[0046] As described above, the width w of the first through-hole conductor 31 ３１ is the width w of the second through-hole conductor 32 ３２ Even in this case, the first through-hole conductor 31 is provided outside the second through-hole conductor 32, and its diameter d ３１ is the diameter d of the second through-hole conductor 32 ３２ Since the area is larger, the current capacity (conductor area in FIG. 2) of the first through-hole conductor 31 and the current capacity (conductor area in FIG. 2) of the second through-hole conductor 32 can be made equal.

[0047] The width of the through-hole conductor means the thickness of the through-hole conductor, and is a dimension equivalent to {(outer diameter of the through-hole conductor) - (inner diameter of the through-hole conductor)} / 2. Here, the outer diameter of the through-hole conductor is the diameter d of the first through-hole conductor 31. ３１ or the diameter d of the second through-hole conductor 32 ３２ is equivalent to

[0048] The coaxial through-hole conductor 30 in which the second through-hole conductor 32 is provided inside the first through-hole conductor 31 is formed, for example, as follows.

[0049] First, a first through hole is formed by drilling, laser processing, or the like in a portion where the first through-hole conductor 31 is to be formed. Then, the inner wall surface of the first through hole is metallized with a low-resistance metal such as copper, gold, or silver to form the first through-hole conductor 31. When forming the first through-hole conductor 31, for example, metallizing the inner wall surface of the first through hole with electroless copper plating, electrolytic copper plating, or the like facilitates processing.

[0050] Next, the inside of the first through-hole conductor 31 is filled with an insulating material 22. The filled insulating material 22 is subjected to drilling, laser processing, or the like to form a second through hole. At this time, the diameter of the second through hole is made smaller than the diameter of the first through-hole conductor 31, so that the insulating material 22 is present between the first through-hole conductor 31 and the second through hole. Thereafter, the inner wall surface of the second through hole is metallized with a low-resistance metal such as copper, gold, or silver, to form the second through-hole conductor 32. When forming the second through-hole conductor 32, for example, metallizing the inner wall surface of the second through hole with electroless copper plating, electrolytic copper plating, or the like can facilitate processing.

[0051] However, the first through-hole conductor 31 and the second through-hole conductor 32 may be formed by any conductor that penetrates the capacitor layer, and the method for forming them is not limited to plating. For example, the second through-hole conductor 32 may be formed by metallizing the inner wall surface of the second through hole, or by filling the second through hole with a metal or a composite material of metal and resin, as in the case of a via conductor.

[0052] 1 , the capacitor 1 may further include a through-hole conductor other than the coaxial through-hole conductor 30. For example, the capacitor 1 may further include a through-hole conductor that is not electrically connected to either the first electrode layer or the second electrode layer of the capacitor layer 10.

[0053] 1, the capacitor 1 preferably further includes internal wiring layers 41 and 42 provided inside the sealing layer 20. The internal wiring layers 41 and 42 are preferably provided along the main surface direction perpendicular to the thickness direction of the capacitor layer 10. In the example shown in FIG. 1, the internal wiring layers 41 and 42 are provided on both main surface sides of the capacitor layer 10, but they may be provided on only one of the main surface sides.

[0054] The capacitor 1 preferably further includes external wiring layers 51 and 52 provided on the surface of the sealing layer 20. The external wiring layers 51 and 52 are preferably provided along the main surface direction perpendicular to the thickness direction of the capacitor layer 10. In the example shown in Fig. 1, the external wiring layers 51 and 52 are provided on both main surfaces of the capacitor layer 10, but they may be provided on only one of the main surfaces.

[0055] The capacitor 1 preferably further includes via conductors 61, 62, and 63 provided inside the sealing layer 20. The via conductors 61, 62, and 63 are preferably provided along the thickness direction of the capacitor layer 10. One end of the via conductor 61 is connected to the internal wiring layer 41, and the other end is connected to the external wiring layer 51. One end of the via conductor 62 is connected to the internal wiring layer 42, and the other end is connected to the external wiring layer 52. One end of the via conductor 63 is connected to the second electrode layer of the capacitor layer 10 (the cathode layer 12 in the example shown in FIG. 1 ), and the other end is connected to the internal wiring layer 42.

[0056] Fig. 7 is a plan view of the capacitor shown in Fig. 1 taken on a P2 plane. Fig. 8 is a plan view of the capacitor shown in Fig. 1 taken on a P3 plane. Fig. 9 is a plan view of the capacitor shown in Fig. 1 taken on a P4 plane. Fig. 10 is a plan view of the capacitor shown in Fig. 1 taken on a P5 plane.

[0057] 1 , 7 , 8 , 9 , and 10 , the first electrode layer of the capacitor layer 10 (anode plate 11 in the example shown in FIG. 1 ) is electrically connected to the external wiring layer 51 via the first through-hole conductor 31, the internal wiring layer 41, and the via conductor 61. In this manner, it is preferable that the first electrode layer is electrically drawn out to the surface of the sealing layer 20 via the first through-hole conductor 31 and the internal wiring layer 41. The external wiring layer 51 can function as a connection terminal of the capacitor layer 10.

[0058] 1 , 7 , 8 , 9 , and 10 , the second through-hole conductor 32 is electrically connected to the second electrode layer of the capacitor layer 10 (the cathode layer 12 in the example shown in FIG. 1 ) via the external wiring layer 52, the via conductor 62, the internal wiring layer 42, and the via conductor 63. In this manner, the second through-hole conductor 32 is preferably provided so as to penetrate both the capacitor layer 10 and the sealing layer 20 in the thickness direction of the capacitor layer 10. The external wiring layer 52 can function as a connection terminal of the capacitor layer 10.

[0059] 9, the second through-hole conductor 32, the via conductor 61, and the via conductor 62 are aligned in a straight line when viewed in the thickness direction of the capacitor layer 10. However, they do not have to be aligned in a straight line. Furthermore, the number of via conductors 61 and 62 is not particularly limited, and there may be one or more of each.

[0060] When the capacitor layer 10 includes an anode plate 11 and a cathode layer 12, the anode plate 11 is preferably made of a valve metal that exhibits so-called valve action. Examples of the valve metal include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, as well as alloys containing at least one of these metals. Among these, aluminum or an aluminum alloy is preferred.

[0061] The anode plate 11 is preferably flat, and more preferably foil-shaped. The anode plate 11 may have a porous portion 11B on at least one main surface of the core portion 11A, or may have porous portions 11B on both main surfaces of the core portion 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etched layer.

[0062] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the unetched core portion 11A after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed according to the required withstand voltage and electrostatic capacitance, but the combined thickness of the porous portions 11B on both sides of the core portion 11A is preferably 10 μm or more and 180 μm or less.

[0063] The pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore diameter of the porous portion 11B refers to the median diameter D50 measured with a mercury porosimeter. The pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.

[0064] The dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape. The dielectric layer 13 is preferably made of an oxide film of the valve metal. For example, when aluminum foil is used as the anode plate 11, the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).

[0065] The thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.

[0066] When the cathode layer 12 includes a solid electrolyte layer 12A, examples of materials constituting the solid electrolyte layer 12A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred. The conductive polymer may also contain a dopant such as polystyrene sulfonate (PSS). The solid electrolyte layer 12A preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0067] The thickness of the solid electrolyte layer 12A from the surface of the porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0068] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion liquid of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.

[0069] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by sponge transfer, screen printing, dispenser, inkjet printing, or the like.

[0070] When the cathode layer 12 includes the conductor layer 12B, the conductor layer 12B includes at least one layer selected from a conductive resin layer and a metal layer. The conductor layer 12B may be composed of only a conductive resin layer or only a metal layer. The conductor layer 12B preferably covers the entire surface of the solid electrolyte layer 12A.

[0071] The conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.

[0072] Examples of the metal layer include a metal plating film and a metal foil. The metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main component. The term "main component" refers to the elemental component with the largest weight ratio.

[0073] When the conductor layer 12B includes a carbon layer 12Ba and a copper layer 12Bb, the carbon layer 12Ba is provided to electrically and mechanically connect the solid electrolyte layer 12A and the copper layer 12Bb. The carbon layer 12Ba can be formed in a predetermined area by applying a carbon paste to the solid electrolyte layer 12A using sponge transfer, screen printing, a dispenser, inkjet printing, or the like. It is preferable to laminate the copper layer 12Bb in the subsequent process while the carbon layer 12Ba is still viscous before drying. The thickness of the carbon layer 12Ba is preferably 2 μm or more and 20 μm or less.

[0074] When the conductor layer 12B includes a carbon layer 12Ba and a copper layer 12Bb, the copper layer 12Bb can be formed by printing a copper paste on the carbon layer 12Ba by sponge transfer, screen printing, spray coating, dispenser, inkjet printing, etc. The thickness of the copper layer 12Bb is preferably 2 μm or more and 20 μm or less.

[0075] The sealing layer 20 is made of an insulating material. The sealing layer 20 is preferably made of an insulating resin. Examples of insulating resins that make up the sealing layer 20 include epoxy resins and phenolic resins. Furthermore, the sealing layer 20 preferably contains a filler. Examples of fillers contained in the sealing layer 20 include inorganic fillers such as silica particles, alumina particles, and metal particles.

[0076] 1, the sealing layer 20 is provided on both main surfaces of the capacitor layer 10, but it may be provided on only one of the main surfaces. The sealing layer 20 provided on one main surface of the capacitor layer 10 may be composed of only one layer, or may be composed of two or more layers. When the sealing layer 20 is composed of two or more layers, the materials constituting each layer may be the same or different.

[0077] Between the capacitor layer 10 and the sealing layer 20, for example, a stress relaxation layer, a moisture-proof film, or the like may be provided.

[0078] The stress relaxation layer is preferably made of an insulating resin. Examples of insulating resins that make up the stress relaxation layer include epoxy resin, phenolic resin, and silicone resin. Furthermore, the stress relaxation layer preferably contains a filler. Examples of fillers contained in the stress relaxation layer include inorganic fillers such as silica particles, alumina particles, and metal particles. The insulating resin that makes up the stress relaxation layer is preferably different from the insulating resin that makes up the sealing layer 20.

[0079] Since the sealing layer 20 is required to have properties such as adhesion to the external electrodes (e.g., external wiring layers 51 and 52) as an exterior body, it is difficult to simply match the linear expansion coefficient with that of the capacitor layer 10 or to select a resin with an arbitrary elastic modulus. In contrast, by providing a stress relaxation layer, it is possible to adjust the thermal stress design without losing the functions of the capacitor layer 10 and the sealing layer 20.

[0080] The stress relaxation layer preferably has lower moisture permeability than the sealing layer 20. In this case, in addition to adjusting the stress, it is possible to reduce the penetration of moisture into the capacitor layer 10. The moisture permeability of the stress relaxation layer can be adjusted by the type of insulating resin that constitutes the stress relaxation layer, the amount of filler contained in the stress relaxation layer, etc.

[0081] The insulating material 22 filled between the first through-hole conductor 31 and the second through-hole conductor 32 is preferably made of an insulating resin. Examples of the insulating resin that constitutes the insulating material 22 include epoxy resin and phenolic resin. Furthermore, the insulating material 22 preferably contains a filler. Examples of the filler contained in the insulating material 22 include inorganic fillers such as silica particles, alumina particles, and metal particles.

[0082] The insulating material 22 may be made of the same material as the sealing layer 20. For example, as shown in FIG. 1 , the sealing layer 20 may be filled between the first through-hole conductor 31 and the second through-hole conductor 32.

[0083] Alternatively, insulating material 22 may be made of the same material as the stress relaxation layer described above. For example, if capacitor 1 includes a stress relaxation layer, the stress relaxation layer may be filled between first through-hole conductor 31 and second through-hole conductor 32.

[0084] The insulating material 22 may have a coefficient of thermal expansion greater than, smaller than, or the same as that of the material (e.g., copper) that constitutes the first through-hole conductor 31 and the second through-hole conductor 32 .

[0085] When a resin filling portion 24 is provided inside the second through-hole conductor 32, the material constituting the resin filling portion 24 may have a thermal expansion coefficient greater than, less than, or the same as that of the material constituting the second through-hole conductor 32 (e.g., copper).

[0086] When insulating layer 26 is provided around first through-hole conductor 31 constituting coaxial through-hole conductor 30, insulating layer 26 is preferably made of an insulating resin. Examples of insulating resins that make up insulating layer 26 include polyphenylsulfone resin, polyethersulfone resin, cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.

[0087] The insulating layer 26 may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating layer 26 contains an inorganic filler, it may adversely affect the effective capacitive portion of the capacitor layer 10. Therefore, the insulating layer 26 is preferably made of a resin alone.

[0088] The insulating layer 26 can be formed by applying a mask material such as a composition containing an insulating resin to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser, or inkjet printing.

[0089] The thickness of the insulating layer 26 from the surface of the porous portion 11B is preferably 20 μm or less. The thickness of the insulating layer 26 from the surface of the porous portion 11B may be 0 μm, but is preferably 2 μm or more.

[0090] 1 , an insulating layer 26 is provided around the first through-hole conductor 31 by filling the porous portion 11B exposed at the end surface of the anode plate 11 electrically connected to the first through-hole conductor 31 with an insulating material. By filling the porous portion 11B around a certain portion of the first through-hole conductor 31 with an insulating material, insulation between the anode plate 11 and the cathode layer 12 can be ensured, thereby preventing short circuits. Furthermore, by suppressing dissolution of the end surface of the anode plate 11 that occurs during chemical treatment to form wiring layers such as the internal wiring layers 41 and 42, penetration of the chemical into the capacitor layer 10 can be prevented, thereby improving the reliability of the capacitor 1.

[0091] The insulating layer 26 may be filled inside the porous portion 11B and provided on the surface of the porous portion 11B above the filled portion, i.e., the thickness of the insulating layer 26 may be greater than the thickness of the porous portion 11B.

[0092] An anode connection layer may be provided between the first through-hole conductor 31 and the end face of the anode plate 11. That is, the first through-hole conductor 31 may be electrically connected to the end face of the anode plate 11 via the anode connection layer. When the anode connection layer is provided between the first through-hole conductor 31 and the end face of the anode plate 11, the anode connection layer functions as a barrier layer for the anode plate 11. As a result, dissolution of the anode plate 11 that occurs during chemical treatment to form wiring layers such as the internal wiring layers 41 and 42 is suppressed, thereby preventing the chemical solution from penetrating into the capacitor layer 10, thereby improving the reliability of the capacitor 1.

[0093] When an anode connection layer is provided between the first through-hole conductor 31 and the end surface of the anode plate 11, the anode connection layer includes, for example, a first anode connection layer primarily made of zinc and a second anode connection layer primarily made of nickel or copper, in this order from the anode plate 11. For example, the first anode connection layer is formed on the end surface of the anode plate 11 by displacement deposition of zinc using a zincate treatment, and then the second anode connection layer is formed on the first anode connection layer by electroless nickel plating or electroless copper plating. Note that the first anode connection layer may disappear, in which case the anode connection layer may include only the second anode connection layer.

[0094] It is not necessary to provide an anode connection layer between the first through-hole conductor 31 and the end surface of the anode plate 11. In this case, the first through-hole conductor 31 is directly connected to the end surface of the anode plate 11.

[0095] 2, it is preferable that the first through-hole conductor 31 is electrically connected to the end face of the first electrode layer (e.g., anode plate 11) along its entire periphery. In this case, the contact area between the first through-hole conductor 31 and the first electrode layer is increased, thereby reducing the connection resistance with the first through-hole conductor 31 and lowering the equivalent series resistance (ESR) of the capacitor 1. Furthermore, the increased adhesion between the first through-hole conductor 31 and the first electrode layer reduces the likelihood of problems such as peeling at the connection surface due to thermal stress.

[0096] Examples of materials for the internal wiring layers 41 and 42 include low-resistance metals such as silver, gold, and copper. The material for the internal wiring layer 41 may be the same as or different from the material for the internal wiring layer 42. The internal wiring layers 41 and 42 are formed by a method such as plating.

[0097] In order to improve the adhesion between the internal wiring layers 41 and 42 and other components, for example, the adhesion between the internal wiring layer 41 and the first through-hole conductor 31, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as a constituent material of the internal wiring layers 41 and 42.

[0098] Examples of materials for the external wiring layers 51 and 52 include low-resistance metals such as silver, gold, and copper. The material for the external wiring layer 51 may be the same as or different from the material for the external wiring layer 52. The material for the external wiring layers 51 and 52 may be the same as or different from the material for the internal wiring layers 41 and 42. The external wiring layers 51 and 52 are formed by, for example, a plating process or other method.

[0099] In order to improve the adhesion between the external wiring layer 51 or 52 and other components, for example, the adhesion between the external wiring layer 52 and the second through-hole conductor 32, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as a constituent material of the external wiring layers 51 and 52.

[0100] Examples of materials that can be used for the via conductors 61, 62, and 63 include materials similar to those that can be used for the internal wiring layers 41 and 42. The via conductors 61, 62, and 63 can be formed by, for example, plating, heat treatment of a conductive paste, or the like.

[0101] Fig. 11 is a cross-sectional view schematically showing another example of a capacitor according to the present invention, and Fig. 12 is a plan view of the capacitor shown in Fig. 11 taken along plane P1.

[0102] As in the capacitor 2 shown in Figures 11 and 12, when viewed in the thickness direction of the capacitor layer 10, the capacitor layer 10 may have two or more capacitive effective portions AR1 and insulating partition portions AR2 that partition the capacitive effective portions AR1.

[0103] The effective capacitance portion AR1 is a region in the thickness direction of the capacitor layer 10 where the first electrode layer (the anode plate 11 in the example shown in Figures 11 and 12) and the second electrode layer (the cathode layer 12 in the example shown in Figures 11 and 12) face each other via the dielectric layer 13.

[0104] The capacitor layer 10 is separated between adjacent capacitive effective portions AR1. The capacitor layer 10 may be physically separated between adjacent capacitive effective portions AR1. In this case, the capacitor layer 10 may be electrically separated or electrically connected between adjacent capacitive effective portions AR1. When the capacitor layer 10 has three or more capacitive effective portions AR1, there may be a mixture of capacitive effective portions AR1 in which adjacent capacitor layers 10 are electrically separated and capacitive effective portions AR1 in which adjacent capacitor layers 10 are electrically connected.

[0105] 11 and 12, it is preferable that at least one coaxial through-hole conductor 30 is present inside the capacitively effective portion AR1. By arranging the through-hole conductor inside the capacitively effective portion AR1, it is possible to ensure large capacity and freedom in designing the power supply line compared to when the through-hole conductor is arranged around the capacitively effective portion AR1.

[0106] Of the two or more capacitively effective portions AR1, it is preferable that at least one of the capacitively effective portions AR1 has at least one coaxial through-hole conductor 30 inside, and it is more preferable that each of the capacitively effective portions AR1 has at least one coaxial through-hole conductor 30 inside. The number of coaxial through-hole conductors 30 inside the capacitively effective portions AR1 may be the same for each, or some or all of them may be different.

[0107] The insulating section AR2 is provided so as to surround the effective capacitive section AR1 when viewed in the thickness direction of the capacitor layer 10.

[0108] 11 and 12 , an insulating layer 28 is provided to surround the cathode layer 12 when viewed in the thickness direction of the capacitor layer 10. Furthermore, a sealing layer 20 is filled in the divided portion of the capacitor layer 10. In this case, the insulating layer 28 and the sealing layer 20 form an insulating partition portion AR2.

[0109] When the insulating layer 28 is provided so as to surround the cathode layer 12, the insulating layer 28 is preferably made of an insulating resin. Examples of insulating resins that can be used for the insulating layer 28 include polyphenylsulfone resin, polyethersulfone resin, cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof. The insulating layer 28 may be made of the same insulating resin as the insulating layer 26, or may be made of a different insulating resin.

[0110] The insulating layer 28 may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating layer 28 contains an inorganic filler, this may adversely affect the effective capacitive portion AR1 of the capacitor layer 10. Therefore, the insulating layer 28 is preferably made of a resin alone.

[0111] The number of capacitive effective portions AR1 is not particularly limited as long as it is two or more. When viewed from the thickness direction of the capacitor layer 10, the capacitive effective portions AR1 may be arranged linearly or in a plane. Furthermore, the capacitive effective portions AR1 may be arranged regularly or irregularly. When viewed from the thickness direction of the capacitor layer 10, the sizes and planar shapes of the capacitive effective portions AR1 may be the same, or some or all of them may be different. The capacitor layer 10 may have two or more types of capacitive effective portions AR1 with different areas when viewed from the thickness direction.

[0112] The capacitor layer 10 may have a capacitive effective portion AR1 whose planar shape when viewed in the thickness direction is not rectangular. In this specification, "rectangle" means a square or a rectangle. Therefore, the capacitor layer 10 may include capacitive effective portions AR1 whose planar shape is, for example, a polygon other than a rectangle, such as a quadrangle, a triangle, a pentagon, or a hexagon, a shape including a curved portion, a circle, an ellipse, or the like. In this case, the capacitor layer 10 may include two or more types of capacitive effective portions AR1 with different planar shapes. Furthermore, the capacitor layer 10 may or may not include capacitive effective portions AR1 whose planar shape is rectangular in addition to capacitive effective portions AR1 whose planar shape is not rectangular.

[0113] Of two or more capacitive effective portions AR1, all of the capacitive effective portions AR1 may be surrounded by insulating division portions AR2, or there may be a capacitive effective portion AR1 that is not surrounded by an insulating division portion AR2. In the capacitive effective portion AR1 surrounded by an insulating division portion AR2, the entire capacitive effective portion AR1 may be surrounded by the insulating division portion AR2, or only a part of the capacitive effective portion AR1 may be surrounded by the insulating division portion AR2.

[0114] Fig. 13 is a cross-sectional view schematically illustrating another example of a capacitor according to the present invention. Fig. 14 is a diagram schematically illustrating the planar layout of the capacitor shown in Fig. 13. Fig. 13 corresponds to the cross-sectional view taken along line A-A in Fig. 14. In Fig. 14, the thick dashed line indicates first through-hole conductor 31, the thick solid line indicates second through-hole conductor 32, the thick two-dot chain line indicates third through-hole conductor 33, the thick one-dot chain line indicates fourth through-hole conductor 34, the thick dotted line indicates via conductors 62, 63, the thin one-dot chain line indicates internal wiring layers 41, 42, the thin two-dot chain line indicates external wiring layers 71, 72, the thin dashed line indicates cathode layer (second electrode layer) 12, the thin solid line indicates a through hole provided in anode plate (first electrode layer) 11, and the thin dotted line indicates the outline of one effective capacitance section (unit) having one coaxial through-hole conductor 30.

[0115] 13 and 14 , the capacitor 1 shown in FIG. 1 may have a structure in which it is further sealed with an outer sealing layer 21, and may have a third through-hole conductor 33 and a fourth through-hole conductor 34 that each penetrate the outer sealing layer 21. The third through-hole conductor 33 is electrically connected to the first electrode layer (anode plate 11) of the capacitor layer 10, and the fourth through-hole conductor 34 is electrically connected to the second electrode layer (cathode layer 12).

[0116] At the locations where the third through-hole conductor 33 and the fourth through-hole conductor 34 are to be formed, through-holes having a diameter larger than the diameters of the third through-hole conductor 33 and the fourth through-hole conductor 34 are formed in the anode plate 11 and filled with an insulating material 23 .

[0117] The above electrical connection can be achieved by connecting the third through-hole conductor 33 to the side surface of the internal wiring layer 41 and / or the external wiring layer 51, and by connecting the fourth through-hole conductor 34 to the side surface of the internal wiring layer 42 and / or the external wiring layer 52.

[0118] The outer sealing layer 21 is made of an insulating material. The insulating material constituting the outer sealing layer 21 may be the same as or different from the insulating material constituting the sealing layer 20. The outer sealing layer 21 is preferably made of an insulating resin. Furthermore, the outer sealing layer 21 preferably contains a filler.

[0119] 13, outer sealing layer 21 is provided on both main surfaces of sealing layer 20, but it may be provided on only one of the main surfaces. Outer sealing layer 21 provided on one main surface of sealing layer 20 may be composed of only one layer, or may be composed of two or more layers. When outer sealing layer 21 is composed of two or more layers, the materials constituting each layer may be the same or different.

[0120] The inside of each of the third through-hole conductor 33 and the fourth through-hole conductor 34 may be filled with a material containing resin. That is, the inside of each of the third through-hole conductor 33 and the fourth through-hole conductor 34 may be provided with a resin filling portion 25.

[0121] The capacitor 3 may further include external wiring layers 71 and 72 provided on the surface of the outer sealing layer 21. The external wiring layer 71 is connected to the third through-hole conductor 33, and the external wiring layer 72 is connected to the fourth through-hole conductor 34.

[0122] 14 , the coaxial through-hole conductors 30, the third through-hole conductors 33, and the fourth through-hole conductors 34 are preferably arranged in a regular honeycomb pattern. In this case, the via conductors 62 and 63 are preferably arranged at the center of an equilateral triangle formed by the three centers of the honeycomb-arranged coaxial through-hole conductors 30, the third through-hole conductors 33, and the fourth through-hole conductors 34. Furthermore, the equilateral triangular internal wiring layer 42 is preferably formed so as to include the three via conductors 62 formed at the same distance from the center of the fourth through-hole conductor 34.

[0123] FIG. 15 shows the relationship between the through-hole conductors and the relationship between each through-hole conductor and the via conductor connected to the second electrode layer in the planar layout shown in FIG.

[0124] 15 , in the capacitor 3, it is preferable that the distance between the centers of the coaxial through-hole conductor 30 and the third through-hole conductor 33, the distance between the centers of the third through-hole conductor 33 and the fourth through-hole conductor 34, and the distance between the centers of the fourth through-hole conductor 34 and the coaxial through-hole conductor 30 are all the same (thick solid arrows in FIG. 15 have the same length). It is also preferable that the distance between the centers of the coaxial through-hole conductor 30 and each of the via conductors 62, 63, the distance between the centers of the third through-hole conductor 33 and each of the via conductors 62, 63, and the distance between the centers of the fourth through-hole conductor 34 and each of the via conductors 62, 63 are all the same (thin solid arrows in FIG. 15 have the same length).

[0125] Fig. 16 is a diagram illustrating a method for manufacturing the capacitor shown in Fig. 13, and is a cross-sectional view schematically illustrating the capacitor at a stage before sealing with an outer sealing layer. Fig. 17 is another diagram illustrating a method for manufacturing the capacitor shown in Fig. 13, and is a cross-sectional view schematically illustrating the capacitor at a stage after through holes have been formed in the outer sealing layer.

[0126] The capacitor 3 is formed, for example, as follows.

[0127] First, as shown in Fig. 16, a capacitor 3a is prepared at a stage prior to the formation of the outer sealing layer 21, similar to the capacitor 1 shown in Fig. 1. However, in the capacitor 3a, a first through hole for the first through-hole conductor 31 is formed, and a third through hole for the third through-hole conductor and a fourth through hole for the fourth through-hole conductor are also formed. The third and fourth through holes are then filled with an insulating material 23, and then the first through-hole conductor 31, internal wiring layers 41 and 42, second through-hole conductor 32, and external wiring layers 51 and 52 are formed in this order, similar to the capacitor 1 shown in Fig. 1.

[0128] 17, the capacitor 3a is sealed with an outer sealing layer 21. The capacitor 3a may be embedded in the substrate of the semiconductor package. Then, through holes are formed by drilling, laser processing, or the like in the areas where the third through-hole conductor 33 and the fourth through-hole conductor 34 are to be formed.

[0129] Then, the inner wall surfaces of the through holes are metallized with a low-resistance metal such as copper, gold, or silver to form third through-hole conductors 33 and fourth through-hole conductors 34, respectively, as shown in Fig. 13. When forming the third through-hole conductors 33 and fourth through-hole conductors 34, for example, metallizing the inner wall surfaces of the through holes with electroless copper plating, electrolytic copper plating, or the like facilitates processing.

[0130] The capacitor of the present invention can be suitably used as a constituent material of a composite electronic component, which includes, for example, the capacitor of the present invention, external electrodes (e.g., external wiring layers) provided outside the sealing layer of the capacitor and electrically connected to the first electrode layer and the second electrode layer of the capacitor, and an electronic component connected to the external electrodes.

[0131] In a composite electronic component, the electronic component connected to the external electrode may be a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. Also, a composite of a passive element and an active element may be connected to the external electrode.

[0132] Examples of passive elements include inductors, etc. Examples of active elements include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0133] The capacitor of the present invention has a sheet-like shape as a whole. Therefore, in a composite electronic component, the capacitor can be treated like a mounting substrate, and electronic components can be mounted on the capacitor. Furthermore, by making the electronic components mounted on the capacitor sheet-like, it is possible to connect the capacitor and the electronic components in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, active elements and passive elements can be configured like a single module.

[0134] For example, a switching regulator can be formed by electrically connecting the capacitor of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0135] In a composite electronic component, a circuit layer may be formed on either side of a capacitor matrix sheet on which a plurality of capacitors of the present invention are laid out, and the circuit layer may be connected to a passive element or an active element.

[0136] Alternatively, the capacitor of the present invention may be placed in a cavity provided in a substrate, embedded in resin, and then a circuit layer may be formed on the resin. Another electronic component (a passive element or an active element) may be mounted in another cavity of the same substrate.

[0137] Alternatively, the capacitor of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and then the capacitor may be connected to a passive or active element.

[0138] The present specification discloses the following:

[0139] <1> A capacitor comprising: a capacitor layer including a first electrode layer and a second electrode layer opposed to each other in a thickness direction via a dielectric layer; and a coaxial through-hole conductor provided to penetrate the capacitor layer in the thickness direction of the capacitor layer, wherein the coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer, wherein the first through-hole conductor is electrically connected to an end face of the first electrode layer, the second through-hole conductor is provided inside the first through-hole conductor, and the first through-hole conductor and the second through-hole conductor are insulated from each other.

[0140] <2> The capacitor according to <1>, further comprising a sealing layer that seals the capacitor layer.

[0141] <3> The capacitor according to <2>, further comprising an internal wiring layer provided inside the sealing layer, wherein the first electrode layer is electrically drawn out to the surface of the sealing layer via the first through-hole conductor and the internal wiring layer.

[0142] <4> The capacitor according to <2> or <3>, wherein the second through-hole conductor is provided so as to penetrate both the capacitor layer and the sealing layer in a thickness direction of the capacitor layer.

[0143] <5> The capacitor according to any one of <1> to <4>, further comprising an insulating layer provided around the first through-hole conductor.

[0144] <6> The capacitor according to any one of <1> to <5>, wherein the first electrode layer is an anode plate having a core made of metal and a porous portion provided on at least one main surface of the core, the dielectric layer is provided on a surface of the porous portion, and the second electrode layer is a cathode layer provided on the surface of the dielectric layer.

[0145] <7> The capacitor according to <6>, wherein the cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

[0146] <8> The capacitor according to any one of <1> to <7>, wherein, when viewed in a thickness direction of the capacitor layer, the capacitor layer has two or more effective capacitive sections and insulating partition sections that partition the effective capacitive sections.

[0147] <9> The capacitor according to <8>, wherein at least one of the coaxial through-hole conductors is present inside the effective capacitance portion.

[0148] <10> The capacitor according to any one of <1> to <9>, wherein the width of the first through-hole conductor is smaller than the width of the second through-hole conductor.

[0149] REFERENCE SIGNS 1, 1a, 2, 3, 3a Capacitor 10 Capacitor layer 11 Anode plate (first electrode layer) 11A Core portion 11B Porous portion 12 Cathode layer (second electrode layer) 12A Solid electrolyte layer 12B Conductor layer 12Ba Carbon layer 12Bb Copper layer 13 Dielectric layer 20 Sealing layer 21 Outer sealing layer 22, 23 Insulating material 24, 25 Resin-filled portion 26, 28 Insulating layer 30 Coaxial through-hole conductor 31 First through-hole conductor 32 Second through-hole conductor 33 Third through-hole conductor 34 Fourth through-hole conductor 41, 42 Internal wiring layer 51, 52, 71, 72 External wiring layer 61, 62, 63 Via conductor AR1 Capacitive effective portion AR2 Insulating section portion d ２２ Diameter of insulating material d ２６ Diameter of insulating layer d ３１ Diameter of the first through-hole conductor: d ３２ Diameter of the second through-hole conductor w ３１ Width of first through-hole conductor w ３２ Width of second through-hole conductor

Claims

1. a capacitor layer including a first electrode layer and a second electrode layer opposed to each other in a thickness direction via a dielectric layer; a coaxial through-hole conductor provided to penetrate the capacitor layer in a thickness direction of the capacitor layer, the coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer; the first through-hole conductor is electrically connected to an end surface of the first electrode layer; the second through-hole conductor is provided inside the first through-hole conductor, The first through-hole conductor and the second through-hole conductor are insulated from each other.

2. The capacitor of claim 1 further comprising an encapsulation layer encapsulating the capacitor layer.

3. The semiconductor device further includes an internal wiring layer provided inside the sealing layer, 3. The capacitor according to claim 2, wherein the first electrode layer is electrically extended to a surface of the sealing layer via the first through-hole conductor and the internal wiring layer.

4. The capacitor according to claim 2 , wherein the second through-hole conductor is provided so as to penetrate both the capacitor layer and the sealing layer in a thickness direction of the capacitor layer.

5. 4. The capacitor according to claim 1, further comprising an insulating layer provided around the first through-hole conductor.

6. the first electrode layer is an anode plate having a core portion made of a metal and a porous portion provided on at least one main surface of the core portion; the dielectric layer is provided on a surface of the porous portion, 4. The capacitor according to claim 1, wherein the second electrode layer is a cathode layer provided on a surface of the dielectric layer.

7. The capacitor of claim 6 , wherein the cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

8. The capacitor according to any one of claims 1 to 3, wherein, when viewed in a thickness direction of the capacitor layer, the capacitor layer has two or more capacitive effective sections and an insulating section that divides the capacitive effective sections.

9. The capacitor according to claim 8 , wherein at least one of the coaxial through-hole conductors is present inside the capacitively effective portion.

10. 4. The capacitor according to claim 1, wherein a width of the first through-hole conductor is smaller than a width of the second through-hole conductor.