Semiconductor device

Abstract

This semiconductor device comprises: a semiconductor element having a first electrode; a first lead electrically connected to the first electrode; a first conductive member which is electrically connected and joined to the first electrode and the first lead; and a sealing resin which covers the semiconductor element and the first conductive member. The sealing resin has a bottom surface and a side surface. The first lead has: a first terminal part exposed from the bottom surface; a first extension part extending from the first terminal part to a side where the semiconductor element is located in a second direction; and a first suspension part which is connected to the first extension part and is exposed from the side surface. The first conductive member is electrically connected and joined to the first extension part. The dimension of the first extension part in the second direction is greater than the dimension of the first terminal part in the second direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a semiconductor device including a semiconductor element (HEMT) having a switching function. The semiconductor device includes a semiconductor element having a fourth electrode, a fourth lead electrically connected to the fourth electrode, a bonding wire electrically connected to the fourth electrode and the fourth lead, and a sealing resin covering the semiconductor element and the bonding wire. The fourth lead corresponds to a gate terminal of the semiconductor device.

[0003] The fourth lead of the semiconductor device disclosed in Patent Document 1 has a terminal portion for mounting on a wiring board and a connecting portion connected to the terminal portion and half-etched. The connecting portion is covered with a sealing resin. This prevents the fourth lead from falling off the sealing resin. To minimize switching loss in the semiconductor element, measures are sometimes taken to shorten the length of the bonding wire. This is because it reduces parasitic inductance in the conductive path from the fourth lead to the fourth electrode. When taking this measure, it is efficient to conductively bond the bonding wire to the connecting portion. However, conductively bonding the bonding wire to the connecting portion may result in excessive deflection of the connecting portion during conductive bonding of the bonding wire. This raises concerns about a decrease in the bond strength of the bonding wire to the connecting portion.

[0004] Japanese Patent Application Laid-Open No. 2020-115524

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce the length of a conductive member while suppressing a decrease in the bonding strength of the conductive member to a lead.

[0006] One aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element having a first electrode located on one side in a first direction; a first lead spaced from the semiconductor element in a second direction perpendicular to the first direction and electrically connected to the first electrode; a first conductive member conductively connected to the first electrode and the first lead; and a sealing resin covering the semiconductor element and the first conductive member. The sealing resin has a bottom surface facing the side opposite to the side where the first electrode is located in the first direction and a side surface facing a direction perpendicular to the first direction. The first lead has a first terminal portion exposed from the bottom surface, a first protrusion portion extending from the first terminal portion toward the side where the semiconductor element is located in the second direction and spaced from the bottom surface, and a first hanging portion connected to the first protrusion portion and exposed from the side surface. The first conductive member is conductively connected to the first protrusion portion. The dimension of the first protrusion portion in the second direction is greater than the dimension of the first terminal portion in the second direction.

[0007] According to the above configuration, it is possible to reduce the length of the conductive member while suppressing a decrease in the bonding strength of the conductive member to the lead.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure, seen through a sealing resin. FIG. 2 is a plan view corresponding to FIG. 1, with a second conductive member and a third conductive member omitted. FIG. 3 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 4 is a front view of the semiconductor device shown in FIG. 1. FIG. 5 is a rear view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a left side view of the semiconductor device shown in FIG. 1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 1. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 1. FIG. 13 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, seen through a sealing resin. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 13. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 13. Fig. 16 is a plan view of a semiconductor device according to a third embodiment of the present disclosure, showing the sealing resin, the second conductive member, and the third conductive member. Fig. 17 is a bottom view of the semiconductor device shown in Fig. 16. Fig. 18 is a left side view of the semiconductor device shown in Fig. 16. Fig. 19 is a cross-sectional view taken along line XIX-XIX in Fig. 16. Fig. 20 is a cross-sectional view taken along line XX-XX in Fig. 16. Fig. 21 is a cross-sectional view taken along line XXI-XXI in Fig. 16.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 12 . The semiconductor device A10 is generally used in power conversion circuits such as DC-DC converters and inverters. The semiconductor device A10 is packaged in a QFN (Quad Flat Non-leaded) format. The semiconductor device A10 includes a semiconductor element 10, a die pad 20, a first lead 21, a second lead 22, a third lead 23, a first conductive member 31, a second conductive member 32, a third conductive member 33, and a sealing resin 40. For ease of understanding, FIG. 1 shows the sealing resin 40 in a see-through manner. For ease of understanding, FIG. 2 further omits the second conductive member 32 and the third conductive member 33 from FIG. 1 . In FIG. 1 , the see-through sealing resin 40 is indicated by an imaginary line (two-dot chain line).

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to the mounting surface 20A of the die pad 20 (described later) will be referred to as the "first direction z." An example of a direction perpendicular to the first direction z will be referred to as the "second direction x." An example of a direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y."

[0013] As shown in FIGS. 8 to 10 , the sealing resin 40 covers the semiconductor element 10, the first conductive member 31, the second conductive member 32, and the third conductive member 33. The sealing resin 40 also covers a portion of each of the die pad 20, the first lead 21, the second lead 22, and the third lead 23. The sealing resin 40 has electrical insulation properties. The sealing resin 40 is made of a material containing, for example, black epoxy resin. As shown in FIGS. 4 to 8 , the sealing resin 40 has a top surface 41, a bottom surface 42, and side surfaces 43.

[0014] 8 to 11, the top surface 41 faces the same side as a mounting surface 20A of a die pad 20 (described later) in the first direction z. The bottom surface 42 faces the opposite side to the top surface 41 in the first direction z.

[0015] As shown in FIGS. 4 to 7 , the side surface 43 faces in a direction perpendicular to the first direction z. The side surface 43 includes a first side surface 431, a second side surface 432, a third side surface 433, and a fourth side surface 434. The first side surface 431 and the second side surface 432 face in opposite directions in the third direction y. As shown in FIG. 3 , the first side surface 431 and the second side surface 432 are located on opposite sides of the die pad 20. The third side surface 433 and the fourth side surface 434 face in opposite directions in the second direction x. As shown in FIG. 3 , the third side surface 433 and the fourth side surface 434 are located on opposite sides of the die pad 20.

[0016] As shown in FIG. 2 , the die pad 20 is located between the second lead 22 and the third lead 23 in the second direction x. The die pad 20, along with the first lead 21, the second lead 22, and the third lead 23, is obtained from a common lead frame. Therefore, the die pad 20, the first lead 21, the second lead 22, and the third lead 23 are each obtained from the same metal material. As shown in FIGS. 2 and 3 , the die pad 20 has a mounting surface 20A, a back surface 20B, a mounting portion 201, a protruding portion 202, and a plurality of hanging portions 203. The mounting surface 20A and the back surface 20B face opposite each other in the first direction z. The mounting surface 20A faces the semiconductor element 10. As shown in FIG. 3 , the back surface 20B is exposed from the bottom surface 42 of the sealing resin 40.

[0017] As shown in FIGS. 8 to 11 , the mounting portion 201 includes the mounting surface 20A and the back surface 20B, and overlaps the entire back surface 20B when viewed in the first direction z. The mounting portion 201 mounts the semiconductor element 10. The protruding portion 202 extends from the mounting portion 201 in a direction perpendicular to the first direction z. The protruding portion 202 includes the mounting surface 20A and is spaced apart from the bottom surface 42 of the sealing resin 40. As shown in FIG. 2 , the protruding portion 202 surrounds the mounting portion 201 when viewed in the first direction z. The protruding portion 202 is sandwiched between the sealing resin 40 in the first direction z. Each of the multiple hanging portions 203 extends from the protruding portion 202 in the third direction y. Each of the multiple hanging portions 203 has an end surface 203A facing the third direction y. As shown in FIGS. 6 and 7 , the end surface 203 A of each of the plurality of hanging portions 203 is exposed from either the first side surface 431 or the second side surface 432 of the sealing resin 40 .

[0018] As shown in FIGS. 8 to 11 , the semiconductor element 10 is conductively bonded to the mounting surface 20A of the die pad 20 via a bonding layer 19. The bonding layer 19 is, for example, solder. The semiconductor element 10 is a transistor (switching element) used primarily for power conversion. The semiconductor element 10 is made of a material including, for example, a nitride semiconductor. In the semiconductor device A10, the semiconductor element 10 is a HEMT (High Electron Mobility Transistor) made of a material including gallium nitride (GaN).

[0019] 2 , the semiconductor element 10 has a first electrode 11, two second electrodes 12, and two third electrodes 13. The two third electrodes 13, the two second electrodes 12, and the first electrode 11 are located on the side opposite to the side facing the mounting surface 20A of the die pad 20 in the first direction z. A current corresponding to the power before conversion by the semiconductor element 10 flows through the two third electrodes 13. A current corresponding to the power after conversion by the semiconductor element 10 flows through the two second electrodes 12. A gate voltage for driving the semiconductor element 10 is applied to the first electrode 11. The dimension of the semiconductor element 10 in the third direction y is greater than the dimension of the semiconductor element 10 in the second direction x.

[0020] 2 , each of the two second electrodes 12 is located adjacent to one of the two third electrodes 13 in the third direction y. The first electrode 11 is located on one side of the two second electrodes 12 in the third direction y. The first electrode 11 is located adjacent to one of the two third electrodes 13 in the second direction x.

[0021] 2, the first lead 21 is located next to the second lead 22 in the third direction. As shown in FIG. 3, the first lead 21 is located closer to the first side surface 431 of the sealing resin 40 than to the second side surface 432 of the sealing resin 40.

[0022] As shown in FIGS. 2 and 3 , the first lead 21 has a first terminal 211, a first protruding portion 212, and two first hanging portions 213. The first terminal 211 has a mounting surface 211A and a side surface 211B. The mounting surface 211A faces the same side as the bottom surface 42 of the sealing resin 40 in the first direction z. The mounting surface 231A is exposed from the bottom surface 42. The side surface 211B faces the same side as the third side surface 433 of the sealing resin 40 in the second direction x. The side surface 231B is exposed from the third side surface 433. The first protruding portion 212 extends from the first terminal 211 in the second direction x toward the side where the semiconductor element 10 is located. The first protruding portion 212 is spaced apart from the bottom surface 42. The first protruding portion 212 is sandwiched between the sealing resin 40 in the first direction z.

[0023] As shown in Figures 2 and 12, each of the two first suspending portions 213 is connected to the first overhanging portion 212. The two first suspending portions 213 are spaced apart from each other in the second direction x and extend from the first overhanging portion 212 in the third direction y. Each of the two first suspending portions 213 is sandwiched between the sealing resin 40 in the first direction z. Each of the two first suspending portions 213 has an end surface 213A facing the third direction y. As shown in Figures 6 and 12, the end surface 213A of each of the two first suspending portions 213 is exposed from the first side surface 431 of the sealing resin 40.

[0024] As shown in FIGS. 1 to 3 and 10, the dimension L2 of the first protruding portion 212 in the second direction x is larger than the dimension L1 of the first terminal portion 211 in the second direction x.

[0025] 2, the second lead 22 is located between the first lead 21 and the second side surface 432 of the sealing resin 40 in the third direction y. The second lead 22 is located next to the die pad 20 in the second direction x.

[0026] As shown in FIGS. 2 and 3 , the second lead 22 has a second terminal 221, a second protruding portion 222, and two connecting portions 223. The second terminal 221 has a mounting surface 221A and multiple side surfaces 221B. The mounting surface 221A faces the same side as the bottom surface 42 of the sealing resin 40 in the first direction z. The mounting surface 221A is exposed from the bottom surface 42. Each of the multiple side surfaces 221B faces the same side as the third side surface 433 of the sealing resin 40 in the second direction x. Each of the multiple side surfaces 221B is exposed from the third side surface 433. The second protruding portion 222 extends from the second terminal 221 to the same side as the first protruding portion 212 of the first lead 21 in the second direction x. The second protruding portion 222 is spaced apart from the bottom surface 42. The second protruding portion 222 is sandwiched between the sealing resin 40 in the first direction z.

[0027] 2 and 3 , each of the two connecting portions 223 extends from the second protruding portion 222 in the second direction x. The two connecting portions 223 are spaced apart from each other in the third direction y. Each of the two connecting portions 223 is connected to the second protruding portion 222 and the protruding portion 202 of the die pad 20. Therefore, the second lead 22 is electrically connected to the die pad 20. Each of the two connecting portions 223 is sandwiched between the sealing resin 40 in the first direction z.

[0028] 2, the third lead 23 is located on the opposite side of the die pad 20 from the first lead 21 and the second lead 22 in the second direction x. As shown in FIG. 3, the third lead 23 is located closer to the fourth side surface 434 of the sealing resin 40 than to the third side surface 433 of the sealing resin 40.

[0029] As shown in FIGS. 2 and 3 , the third lead 23 has a third terminal 231 and a third protrusion 232. The third terminal 231 has a mounting surface 231A and multiple side surfaces 231B. The mounting surface 231A faces the same side as the bottom surface 42 of the sealing resin 40 in the first direction z. The mounting surface 231A is exposed from the bottom surface 42. Each of the multiple side surfaces 231B faces the same side as the fourth side surface 434 of the sealing resin 40 in the second direction x. Each of the multiple side surfaces 231B is exposed from the fourth side surface 434. The third protrusion 232 extends from the third terminal 231 in a direction perpendicular to the first direction z. The third protrusion 232 is spaced apart from the bottom surface 42. The third protrusion 232 is sandwiched between the sealing resin 40 in the first direction z.

[0030] 1 and 10 , the first conductive member 31 is conductively joined to the first electrode 11 of the semiconductor element 10 and the first protruding portion 212 of the first lead 21. The first conductive member 31 is a wire. Therefore, the first conductive member 31 is conductively joined to the first electrode 11 and the first protruding portion 212 by wire bonding. When viewed in the first direction z, the first conductive member 31 extends in the second direction x. When viewed in the first direction z, the first conductive member 31 is separated from the two second electrodes 12 of the semiconductor element 10 and the two third electrodes 13 of the semiconductor element 10.

[0031] 1 and 9 , the second conductive member 32 is conductively bonded to the two second electrodes 12 of the semiconductor element 10 via a bonding layer 39. In the semiconductor device A10, the second conductive member 32 is a metal clip. The second conductive member 32 and the third conductive member 33 are obtained from a common lead frame. Therefore, the second conductive member 32 and the third conductive member 33 are obtained from the same metal material. The lead frame from which the second conductive member 32 is obtained is different from the lead frame from which the die pad 20 is obtained.

[0032] As shown in FIG. 1 , the second conductive member 32 has a second base portion 321, two first connection portions 322, a suspending portion 323, and an arm portion 324. The second base portion 321 is located on the side where the second lead 22 is located with respect to the die pad 20 in the second direction x. As shown in FIG. 9 , the second base portion 321 is conductively bonded to the second protrusion portion 222 of the second lead 22 via a bonding layer 39. This allows the two second electrodes 12 of the semiconductor element 10 to be electrically connected to the second lead 22. The second base portion 321 has two through holes 321A. The two through holes 321A are spaced apart from each other in the third direction y. Each of the two through holes 321A penetrates the second base portion 321 in the first direction z.

[0033] 1 , the two first connection portions 322 are connected to the second base portion 321. The two first connection portions 322 are spaced apart from each other in the third direction y. When viewed in the first direction z, each of the two first connection portions 322 extends in the second direction x. As shown in FIG. 9 , the two first connection portions 322 are individually conductively bonded to two second electrodes 12 of the semiconductor element 10 via bonding layers 39.

[0034] As shown in FIG. 1 , the suspending portion 323 and the arm portion 324 are located on opposite sides of the second base portion 321 in the third direction y. The suspending portion 323 extends from the second base portion 321 in the third direction y. The suspending portion 323 has an end surface 323A facing the third direction y. As shown in FIGS. 7 and 12 , the end surface 323A is exposed from the second side surface 432 of the sealing resin 40. The arm portion 324 includes a portion extending from the second base portion 321 in the third direction y and a portion extending from the portion extending in the second direction x. The arm portion 324 has an end surface 324A facing the second direction x. As shown in FIG. 4 , the end surface 324A is exposed from the third side surface 433 of the sealing resin 40.

[0035] 1 and 8, the third conductive member 33 is conductively bonded to the two third electrodes 13 of the semiconductor element 10 via a bonding layer 39. The bonding layer 39 is, for example, solder. In the semiconductor device A10, the third conductive member 33 is a metal clip.

[0036] As shown in FIG. 1 , the third conductive member 33 has a second base portion 331, two second connection portions 332, and two hanging portions 333. The second base portion 331 is located on the side where the third lead 23 is located with respect to the die pad 20 in the second direction x. As shown in FIG. 8 , the second base portion 331 is conductively bonded to the third protrusion portion 232 of the third lead 23 via a bonding layer 39. This allows the two third electrodes 13 of the semiconductor element 10 to be electrically connected to the third lead 23. The second base portion 331 has two through holes 331A. The two through holes 331A are spaced apart from each other in the third direction y. Each of the two through holes 331A penetrates the second base portion 331 in the first direction z.

[0037] 1 , the two second connection portions 332 are connected to the second base portion 331. The two second connection portions 332 are spaced apart from each other in the third direction y. When viewed in the first direction z, each of the two second connection portions 332 extends in the second direction x. As shown in FIG. 8 , the two second connection portions 332 are individually conductively bonded to two third electrodes 13 of the semiconductor element 10 via bonding layers 39.

[0038] As shown in FIG. 1 , each of the two hanging portions 333 extends from the second base portion 331 in the third direction y. The two hanging portions 333 are located on opposite sides of the second base portion 331 in the third direction y. Each of the two hanging portions 333 has an end surface 333A facing the third direction y. As shown in FIGS. 6 and 7 , the end surface 333A of each of the two hanging portions 333 is exposed individually from the first side surface 431 and the second side surface 432 of the sealing resin 40.

[0039] Next, the effects of the semiconductor device A10 will be described.

[0040] The semiconductor device A10 includes a semiconductor element 10, a first lead 21, a first conductive member 31, and a sealing resin 40. The first lead 21 has a first terminal 211 exposed from a bottom surface 42 of the sealing resin 40, a first protruding portion 212 extending from the first terminal 211 toward the semiconductor element 10 in the second direction x, and a first suspending portion 213 connected to the first protruding portion 212. The first protruding portion 212 is spaced from the bottom surface 42. The first suspending portion 213 is exposed from a side surface 43 of the sealing resin 40. The first conductive member 31 is conductively bonded to the first electrode 11 of the semiconductor element 10 and the first protruding portion 212. A dimension L2 of the first protruding portion 212 in the second direction x is larger than a dimension L1 of the first terminal 211 in the second direction x. This configuration allows the length of the first conductive member 31 to be shortened. Furthermore, the first terminal portion 211 and the first suspending portion 213 can be supported by the lead frame. This reduces the deflection acting on the first protruding portion 212 in the first direction z when the first conductive member 31 is conductively joined to the first protruding portion 212, thereby suppressing a decrease in the reaction force acting in the first direction z from the first protruding portion 212 to the first conductive member 31. Therefore, with this configuration, in the semiconductor device A10, it is possible to suppress a decrease in the bonding strength of the first conductive member 31 to the first lead 21 while shortening the length of the first conductive member 31.

[0041] The side surface 43 of the sealing resin 40 includes a first side surface 431 and a second side surface 432 that face opposite each other in the third direction y. The first lead 21 is located closer to the first side surface 431 than to the second side surface 432. The first suspending portion 213 of the first lead 21 is exposed from the first side surface 431. By adopting this configuration, it is possible to further reduce the dimension of the first suspending portion 213 in a direction perpendicular to the first direction z.

[0042] The semiconductor device A10 further includes a die pad 20 on which the semiconductor element 10 is mounted. The die pad 20 is exposed from the bottom surface 42 of the sealing resin 40. This configuration can improve the heat dissipation performance of the semiconductor device A10.

[0043] The semiconductor device A10 further includes a second lead 22 that is electrically connected to the second electrode 12 of the semiconductor element 10. The second lead 22 is exposed from the bottom surface 42 of the sealing resin 40. The second lead 22 is located between the first lead 21 and the second side surface 432 of the sealing resin 40 in the third direction y. The second lead 22 is located next to the die pad 20 in the second direction x. This configuration enables the semiconductor device A10 to be surface-mounted on a wiring board, while suppressing an increase in the dimension of the semiconductor device A10 in the third direction y.

[0044] The side surface 43 of the sealing resin 40 includes a third side surface 433 facing the second direction x. The first terminal portion 211 of the first lead 21 and the second lead 22 are exposed from the third side surface 433. With this configuration, when the semiconductor device A10 is mounted on a wiring board, the volume of solder adhering to each of the first lead 21 and the second lead 22 increases. This increases the bonding strength of the semiconductor device A10 to the wiring board.

[0045] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 13 to 15. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 13 shows the sealing resin 40 through which light is transmitted. In Figure 13, the transmitted sealing resin 40 is shown by imaginary lines.

[0046] In the semiconductor device A20, the configurations of the second conductive member 32 and the third conductive member 33 are different from those of the semiconductor device A10.

[0047] 13 and 14 , the second conductive member 32 is a plurality of wires. The second conductive member 32 is conductively bonded to the two second electrodes 12 of the semiconductor element 10 and the protruding portion 202 of the die pad 20 by wire bonding. When viewed in the first direction z, the second conductive member 32 extends in the second direction x and is spaced apart from the second lead 22.

[0048] 13 and 15 , the third conductive member 33 is a plurality of wires. The third conductive member 33 is conductively joined to the two third electrodes 13 of the semiconductor element 10 and the third protruding portion 232 of the third lead 23 by wire bonding. When viewed in the first direction z, the third conductive member 33 extends in the second direction x.

[0049] Next, the effects of the semiconductor device A20 will be described.

[0050] The semiconductor device A20 includes a semiconductor element 10, a first lead 21, a first conductive member 31, and a sealing resin 40. The first lead 21 has a first terminal 211 exposed from a bottom surface 42 of the sealing resin 40, a first protruding portion 212 extending from the first terminal 211 toward the side where the semiconductor element 10 is located in the second direction x, and a first suspending portion 213 connected to the first protruding portion 212. The first protruding portion 212 is spaced apart from the bottom surface 42. The first suspending portion 213 is exposed from a side surface 43 of the sealing resin 40. The first conductive member 31 is conductively joined to the first electrode 11 of the semiconductor element 10 and the first protruding portion 212. A dimension L2 of the first protruding portion 212 in the second direction x is greater than a dimension L1 of the first terminal 211 in the second direction x. Therefore, with this configuration, even in the semiconductor device A20, it is possible to reduce the length of the first conductive member 31 while suppressing a decrease in the bonding strength of the first conductive member 31 to the first lead 21. Furthermore, by being equipped with a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0051] In the semiconductor device A20, the second conductive member 32 is conductively bonded to the die pad 20. The second lead 22 is connected to the die pad 20. By adopting this configuration, the length of the second conductive member 32 is shortened, and therefore, the parasitic inductance applied to the second conductive member 32 can be reduced.

[0052] Each of the second conductive member 32 and the third conductive member 33 is a wire. This configuration allows for greater freedom in setting the conductive path length of each of the second conductive member 32 and the third conductive member 33 compared to the semiconductor device A10.

[0053] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 16 to 21. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 16 does not illustrate the second conductive member 32, the third conductive member 33, and the sealing resin 40. In Figure 16, the transparent first conductive member 31, the second conductive member 32, and the sealing resin 40 are each shown with imaginary lines.

[0054] In the semiconductor device A30, the configurations of the first lead 21 and the second lead 22 are different from those of the semiconductor device A10.

[0055] As shown in FIGS. 16 , 17 , and 21 , the first lead 21 has a second suspending portion 214. The second suspending portion 214 is connected to the first overhanging portion 212 of the first lead 21. The first overhanging portion 212 is located between the first suspending portion 213 and the second suspending portion 214 in the third direction y. The second suspending portion 214 is located between the second lead 22 and the die pad 20 in the second direction x. The second suspending portion 214 extends in the third direction y. The second suspending portion 214 has an end surface 214A facing the third direction y. As shown in FIGS. 18 and 21 , the end surface 214A is exposed from the second side surface 432 of the sealing resin 40.

[0056] 17 and 18 , the second lead 22 does not have two connecting portions 223. As a result, the second lead 22 is spaced apart from the die pad 20. In the semiconductor device A30 as well, the second base portion 321 of the second conductive member 32 is conductively joined to the second protruding portion 222 of the second lead 22 via the bonding layer 39. As shown in FIGS. 19 to 21 , the second base portion 321 straddles the second hanging portion 214 of the second lead 22.

[0057] Next, the effects of the semiconductor device A30 will be described.

[0058] The semiconductor device A30 includes a semiconductor element 10, a first lead 21, a first conductive member 31, and a sealing resin 40. The first lead 21 has a first terminal 211 exposed from a bottom surface 42 of the sealing resin 40, a first protruding portion 212 extending from the first terminal 211 in the second direction x toward the side where the semiconductor element 10 is located, and a first suspending portion 213 connected to the first protruding portion 212. The first protruding portion 212 is spaced from the bottom surface 42. The first suspending portion 213 is exposed from a side surface 43 of the sealing resin 40. The first conductive member 31 is conductively bonded to the first electrode 11 of the semiconductor element 10 and the first protruding portion 212. A dimension L2 of the first protruding portion 212 in the second direction x is greater than a dimension L1 of the first terminal 211 in the second direction x. Therefore, with this configuration, even in the semiconductor device A30, it is possible to reduce the length of the first conductive member 31 while suppressing a decrease in the bonding strength of the first conductive member 31 to the first lead 21. Furthermore, by being equipped with a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0059] In the semiconductor device A30, the first lead 21 has a second suspending portion 214 that is connected to the first overhanging portion 212 and is located between the second lead 22 and the die pad 20 in the second direction x. The second suspending portion 214 is exposed from the second side surface 432 of the sealing resin 40. This configuration allows the second suspending portion 214, in addition to the first terminal portion 211 and the first suspending portion 213 of the first lead 21, to be supported by the lead frame. This further reduces the deflection acting on the first overhanging portion 212 in the first direction z when the first conductive member 31 is conductively bonded to the first overhanging portion 212, thereby further suppressing a decrease in the reaction force acting from the first overhanging portion 212 to the first conductive member 31 in the first direction z. This makes it possible to more effectively suppress a decrease in the bonding strength of the first conductive member 31 to the first lead 21.

[0060] The first overhanging portion 212 of the first lead 21 is located between the first suspending portion 213 and the second suspending portion 214 in the third direction y. This configuration makes it possible to more effectively reduce the deflection in the first direction z acting on the first overhanging portion 212. Furthermore, the dimension of the second suspending portion 214 in the direction perpendicular to the first direction z can be further reduced without the second suspending portion 214 interfering with either the second lead 22 or the die pad 20.

[0061] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0062] The present disclosure includes embodiments described in the following appendices: Appendix 1. Supplementary Note 2. A semiconductor device comprising: a semiconductor element having a first electrode located on one side in a first direction; a first lead spaced from the semiconductor element in a second direction orthogonal to the first direction and conductive to the first electrode; a first conductive member conductively joined to the first electrode and the first lead; and a sealing resin covering the semiconductor element and the first conductive member, wherein the sealing resin has a bottom surface facing the side opposite to the side where the first electrode is located in the first direction and a side surface facing a direction orthogonal to the first direction, the first lead having a first terminal portion exposed from the bottom surface, a first protrusion portion extending from the first terminal portion to the side where the semiconductor element is located in the second direction and spaced from the bottom surface, and a first hanging portion connected to the first protrusion portion and exposed from the side surface, the first conductive member conductively joined to the first protrusion portion, and a dimension of the first protrusion portion in the second direction greater than a dimension of the first terminal portion in the second direction. The semiconductor device according to Appendix 1, wherein the side surfaces include a first side surface and a second side surface facing opposite each other in a third direction orthogonal to the first direction and the second direction, the first lead is located closer to the first side surface than the second side surface, and the first suspending portion is exposed from the first side surface. Appendix 3. The semiconductor device according to Appendix 2, further comprising a second lead conductive to the second electrode, the semiconductor element having a second electrode located on the same side as the first electrode in the first direction, and the second lead being exposed from the bottom surface. Appendix 4. The semiconductor device according to Appendix 3, wherein the second lead is located between the first lead and the second side surface in the third direction. Appendix 5. The semiconductor device according to Appendix 4, further comprising a second conductive member conductively joined to the second electrode and conductive to the second lead. Appendix 6. The semiconductor device according to Appendix 5, further comprising a die pad on which the semiconductor element is mounted, the die pad being located adjacent to the second lead in the second direction. Appendix 7. 7. The semiconductor device according to claim 6, wherein the die pad is exposed from the bottom surface.Appendix 8. The semiconductor device according to Appendix 7, wherein the second lead is spaced from the die pad, and the second conductive member is conductively bonded to the second lead. Appendix 9. The semiconductor device according to Appendix 8, wherein the first lead has a second suspender connected to the first protruding portion and located between the second lead and the die pad in the second direction, and the second suspender is exposed from the second side surface. Appendix 10. The semiconductor device according to Appendix 9, wherein the first protruding portion is located between the first suspender and the second suspender in the third direction. Appendix 11. The semiconductor device according to Appendix 10, wherein the second conductive member straddles the second suspender. Appendix 12. The semiconductor device according to Appendix 7, wherein the second lead is connected to the die pad. Appendix 13. The semiconductor device according to any one of Supplementary Notes 6 to 15, further comprising a third lead electrically connected to the third electrode, wherein the semiconductor element has a third electrode located on the same side as the first electrode in the first direction, the third electrode being exposed from the bottom surface, and the third lead being located on the opposite side of the die pad from the second electrode in the second direction. Appendix 17. The semiconductor device according to Appendix 16, wherein the side surface includes a third side surface facing the second direction, the third side surface is located on an opposite side of the die pad from the third lead in the second direction, and the first terminal portion and the second lead are exposed from the third side surface.

[0063] A10, A20, A30: semiconductor device 10: semiconductor element 11: first electrode 12: second electrode 13: third electrode 19: bonding layer 20: die pad 20A: mounting surface 20B: back surface 201: mounting portion 202: protrusion 203: hanging portion 203A: end surface 21: first lead 211: first terminal portion 211A: mounting surface 211B: side surface 212: first protrusion portion 213: first hanging portion 213A: end surface 214: second hanging portion 214A: end surface 22: second lead 221: second terminal portion 221A: mounting surface 221B: side surface 222: second protrusion portion 223: connecting portion 23: third lead 231: third terminal portion 231A: mounting surface 231B: Side surface 232: Third protruding portion 31: First conductive member 32: Second conductive member 321: First base portion 321A: Through hole 322: First connecting portion 323: Hanging portion 323A: End surface 324: Arm portion 324A: End surface 33: Third conductive member 331: Second base portion 331A: Through hole 332: Second connecting portion 333: Hanging portion 333A: End surface 39: Bonding layer 40: Sealing resin 41: Top surface 42: Bottom surface 43: Side surface 431: First side surface 432: Second side surface 433: Third side surface 434: Fourth side surface L1, L2: Dimensions z: First direction x: Second direction y: Third direction

Claims

1. a semiconductor element having a first electrode located on one side in a first direction; a first lead that is spaced apart from the semiconductor element in a second direction perpendicular to the first direction and that is electrically connected to the first electrode; a first conductive member conductively connected to the first electrode and the first lead; a sealing resin that covers the semiconductor element and the first conductive member, the sealing resin has a bottom surface facing a side opposite to a side on which the first electrode is located in the first direction, and a side surface facing a direction perpendicular to the first direction, the first lead has a first terminal portion exposed from the bottom surface, a first protruding portion extending from the first terminal portion in the second direction toward a side where the semiconductor element is located and spaced from the bottom surface, and a first hanging portion connected to the first protruding portion and exposed from the side surface, the first conductive member is conductively joined to the first protruding portion, A semiconductor device, wherein a dimension of the first protrusion in the second direction is larger than a dimension of the first terminal in the second direction.

2. the side surface includes a first side surface and a second side surface facing opposite each other in a third direction perpendicular to the first direction and the second direction, the first lead is located closer to the first side than to the second side, The semiconductor device according to claim 1 , wherein the first suspending portion is exposed from the first side surface.

3. Further comprising a second lead, the semiconductor element has a second electrode located on the same side as the first electrode in the first direction; The semiconductor device according to claim 2 , wherein the second lead is electrically connected to the second electrode and is exposed from the bottom surface.

4. The semiconductor device according to claim 3 , wherein the second lead is located between the first lead and the second side surface in the third direction.

5. The semiconductor device according to claim 4 , further comprising a second conductive member conductively connected to said second electrode and electrically connected to said second lead.

6. Further comprising a die pad on which the semiconductor element is mounted, The semiconductor device according to claim 5 , wherein the die pad is located adjacent to the second lead in the second direction.

7. The semiconductor device according to claim 6 , wherein the die pad is exposed from the bottom surface.

8. the second lead is spaced from the die pad; The semiconductor device according to claim 7 , wherein the second conductive member is conductively joined to the second lead.

9. the first lead has a second hanging portion connected to the first protruding portion and located between the second lead and the die pad in the second direction; The semiconductor device according to claim 8 , wherein the second suspending portion is exposed from the second side surface.

10. The semiconductor device according to claim 9 , wherein the first protruding portion is located between the first suspending portion and the second suspending portion in the third direction.

11. The semiconductor device according to claim 10 , wherein the second conductive member straddles the second hanging portion.

12. The semiconductor device according to claim 7 , wherein the second lead is connected to the die pad.

13. the second lead has a second terminal portion exposed from the bottom surface, a second protruding portion extending from the second terminal portion to the same side as the first protruding portion in the second direction and spaced from the bottom surface, and a connecting portion connected to the second protruding portion and the die pad, The semiconductor device according to claim 12 , wherein a dimension of said connecting portion in said third direction is smaller than a dimension of said second protruding portion in said third direction.

14. The semiconductor device according to claim 13 , wherein the second conductive member is conductively joined to the second protruding portion.

15. The semiconductor device according to claim 12 , wherein the second conductive member is conductively bonded to the die pad.

16. Further comprising a third lead, the semiconductor element has a third electrode located on the same side as the first electrode in the first direction; the third lead is electrically connected to the third electrode and is exposed from the bottom surface; 16. The semiconductor device according to claim 6, wherein the third lead is located on an opposite side to the second lead with respect to the die pad in the second direction.

17. The side surface includes a third side surface facing the second direction, the third side surface is located on an opposite side to the third lead with respect to the die pad in the second direction, The semiconductor device according to claim 16 , wherein the first terminal portion and the second lead are exposed from the third side surface.