Semiconductor device and vehicle

Abstract

This semiconductor device comprises: a first die pad; a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin covering a part of the first die pad and a part of the second die pad, as well as covering the first semiconductor element and the second semiconductor element. The semiconductor device further comprises: a first heat dissipation member conductively joined to the first die pad; a second heat dissipation member conductively joined to the second die pad; and an insulation part exposing a part of the first heat dissipation member and a part of the second heat dissipation member and insulating the first heat dissipation member and the second heat dissipation member.

Description

Semiconductor device and vehicle

[0001] The present invention relates to a semiconductor device and a vehicle.

[0002] Patent Document 1 discloses a semiconductor device including a first substrate, a semiconductor element mounted on the first substrate, and a sealing resin. When the semiconductor device is used, the first substrate may be attached to a cooler.

[0003] Japanese Patent Application Laid-Open No. 2023-7028

[0004] If an insulator or the like is interposed between the first base material and the cooler, heat dissipation may be reduced.

[0005] An object of the present disclosure is to provide an improved semiconductor device. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device and a vehicle that can promote heat dissipation.

[0006] A semiconductor device provided by a first aspect of the present disclosure comprises a first die pad, a second die pad, a first semiconductor element mounted on the first die pad, a second semiconductor element mounted on the second die pad, and a sealing resin covering a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element, and further comprises a first heat dissipation member conductively joined to the first die pad, a second heat dissipation member conductively joined to the second die pad, and an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and insulates the first heat dissipation member and the second heat dissipation member.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and the semiconductor device provided by the first aspect of the present disclosure, wherein the semiconductor device is electrically connected to the drive source.

[0008] According to the above configuration, it is possible to provide a semiconductor device and a vehicle that are capable of promoting heat dissipation.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a view showing the plan view of FIG. 2, with the sealing resin indicated by imaginary lines. FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 5 is a front view showing the semiconductor device according to the first embodiment. FIG. 6 is a right side view showing the semiconductor device according to the first embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a partially enlarged view showing a portion of FIG. 7. FIG. 10 is a partially enlarged view showing a portion of FIG. 7. FIG. 11 is a diagram showing an example of a circuit configuration of a semiconductor device according to the first embodiment. FIG. 12 is a configuration diagram showing a vehicle equipped with the semiconductor device according to the first embodiment. FIG. 13 is a bottom view showing a semiconductor device according to a first modified example of the first embodiment. FIG. 14 is a cross-sectional view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 15 is a plan view showing a semiconductor device according to a third modified example of the first embodiment, with the sealing resin indicated by imaginary lines. FIG. 16 is a diagram showing an example of a circuit configuration of a semiconductor device according to a third modified example of the first embodiment. FIG. 17 is a plan view showing a semiconductor device according to a fourth modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 18 is a diagram showing an example of a circuit configuration of a semiconductor device according to a fourth modified example of the first embodiment. FIG. 19 is a plan view showing a semiconductor device according to a fifth modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 20 is a diagram showing an example of a circuit configuration of a semiconductor device according to a fifth modified example of the first embodiment. FIG. 21 is a plan view showing a semiconductor device according to the second embodiment. FIG. 22 is a diagram showing an example of a circuit configuration of a semiconductor device according to the second embodiment. FIG. 23 is a plan view showing a semiconductor device according to a first modified example of the second embodiment, in which the sealing resin is shown by imaginary lines. FIG. 24 is a diagram showing an example of a circuit configuration of a semiconductor device according to a first modified example of the second embodiment. FIG. 25 is a plan view showing a semiconductor device according to a seventh modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 26 is a diagram showing an example of a circuit configuration of a semiconductor device according to a seventh modified example of the first embodiment.

[0011] Preferred embodiments of the present invention will now be described in detail with reference to the drawings.

[0012] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0013] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0014] 1 to 11 show a semiconductor device according to a first embodiment of the present disclosure. A semiconductor device A10 of this embodiment includes a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a first semiconductor element 21, a second semiconductor element 22, a first conductive member 31, a second conductive member 32, a pair of first connecting members 41A and 41B, a pair of second connecting members 42A and 42B, a sealing resin 50, a first heat dissipation member 60A, a second heat dissipation member 60B, and an insulating portion 70. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

[0015] For convenience of explanation, the thickness direction of the semiconductor device A10 will be referred to as the "thickness direction z." In the following explanation, one side of the thickness direction z will be referred to as the upper side, and the other side will be referred to as the lower side. Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define the relationship with the direction of gravity. Furthermore, "plan view" refers to the view in the thickness direction z. A direction intersecting the thickness direction z will be referred to as the "first direction x." A direction intersecting the thickness direction z and the first direction x will be referred to as the "second direction y." In this embodiment, the first direction x, the second direction y, and the thickness direction z are perpendicular to each other.

[0016] The specific structure and use of the semiconductor device according to the present disclosure are not limited in any way. The semiconductor device A10 converts, for example, a DC power supply voltage applied to a first terminal lead 14 and a second terminal lead 15 of the plurality of terminal leads 13 into an AC voltage using a first semiconductor element 21 and a second semiconductor element 22. The converted AC voltage is input to a power supply target such as a motor from a third terminal lead 16 of the plurality of terminal leads 13. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0017] As shown in FIGS. 3 and 7 , the first die pad 10A and the second die pad 10B are spaced apart from each other in the first direction x. The first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 are configured from the same lead frame. The lead frame is composed of copper (Cu) or a copper alloy. Therefore, the first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 each contain copper. Each of the first die pad 10A and the second die pad 10B is, for example, rectangular in plan view.

[0018] The first die pad 10A and the second die pad 10B each have a main surface 101 and a back surface 102. Unless otherwise specified, the main surface 101 and the back surface 102 described below are common to the first die pad 10A and the second die pad 10B. The main surface 101 faces in the thickness direction z (upward). The main surface 101 is covered with a sealing resin 50. A first semiconductor element 21 is mounted on the main surface 101 of the first die pad 10A. The back surface 102 of the first die pad 10A faces the side opposite to the side on which the first semiconductor element 21 is located in the thickness direction z. A second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. The back surface 102 of the second die pad 10B faces the side opposite to the side on which the second semiconductor element 22 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The rear surface 102 is plated with, for example, tin (Sn).

[0019] 1 to 8 , the sealing resin 50 covers the first semiconductor element 21, the second semiconductor element 22, the first conductive member 31, the second conductive member 32, and at least a portion of each of the first die pad 10A and the second die pad 10B. The sealing resin 50 also covers a portion of each of the multiple terminal leads 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 contains, for example, a black epoxy resin. The sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, multiple recesses 56, a groove 57, and multiple recesses 581, 582.

[0020] 7, the resin main surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Figures 7 and 8, the resin back surface 52 faces the opposite side to the resin main surface 51 in the thickness direction z. As shown in Figure 4, the back surfaces 102 of the first die pad 10A and the second die pad 10B are exposed from the resin back surface 52.

[0021] 2 , 4 , and 5 , the pair of first side surfaces 53 are spaced apart from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend in the second direction y. The pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.

[0022] 2, 4, and 6, the second side surface 54 and the third side surface 55 are spaced apart from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite each other in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the resin main surface 51 and the resin back surface 52. As shown in FIG. 5, a plurality of terminal leads 13 are exposed from the third side surface 55.

[0023] 2, 4, and 5, the recesses 56 are recessed in the second direction y from the third side surface 55 and extend in the thickness direction z from the resin main surface 51 to the resin back surface 52. In the first direction x, the recesses 56 are located individually between the seventh terminal lead 182 and the third terminal lead 16, between the third terminal lead 16 and the first terminal lead 14, between the first terminal lead 14 and the second terminal lead 15, and between the second terminal lead 15 and the sixth terminal lead 181.

[0024] 4 , 5 , 7 , and 8 , the groove 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. When viewed along the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B. Note that the sealing resin 50 may not have the groove 57.

[0025] As shown in FIGS. 5 , 6 , 7 , and 8 , each of the multiple recesses 581, 582 is recessed from the resin main surface 51 in the thickness direction z. The planar shape of each of the multiple recesses 581, 582 is not particularly limited, but is circular in the illustrated example. Each of the multiple recesses 581 overlaps the first die pad 10A in planar view. In the illustrated example, the multiple recesses 581 are individually located near the four corners of the first die pad 10A in planar view. Each of the multiple recesses 582 overlaps the second die pad 10B in planar view. In the illustrated example, the multiple recesses 582 are individually located near the four corners of the second die pad 10B in planar view. Each of the multiple recesses 581, 582 does not overlap either the first conductive member 31 or the second conductive member 32 in planar view. Furthermore, in a plan view, each of the multiple recesses 581, 582 does not overlap either the pair of first connection members 41A, 41B or the pair of second connection members 42A, 42B. The multiple recesses 581 are formed by pins for fixing the first die pad 10A during the manufacture of the semiconductor device A10. The pins are pressed against the first die pad 10A to fix the first die pad 10A before the sealing resin 50 is formed. In this state, the formation of the sealing resin 50 begins. The pins are then pulled out before the formation of the sealing resin 50 is completed. As a result, the sealing resin 50 is formed in at least a portion of the area where the pins were located, so that the main surface 101 of the first die pad 10A is covered with the sealing resin 50. The multiple recesses 581 are marks formed during the molding process of the sealing resin 50. Similarly, the multiple recesses 582 are formed by pins for fixing the second die pad 10B during the manufacture of the semiconductor device A10. The recesses 582 are marks formed during the molding process of the sealing resin 50. Note that the sealing resin 50 may not have the recesses 581 and 582.

[0026] 1, 2, and 4, the sealing resin 50 further has a plurality of traces 589. The plurality of traces 589 are, for example, traces formed by an ejector pin pressed against the sealing resin 50 to remove the sealing resin 50 from a mold during the formation of the sealing resin 50. Each of the plurality of traces 589 is recessed from either the resin main surface 51 or the resin back surface 52. Note that none of the plurality of traces 589 may be formed on the sealing resin 50. Furthermore, as shown in FIG. 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B each have a trace 109. The trace 109 formed on the first die pad 10A and the trace 109 formed on the second die pad 10B are respectively traces formed by the aforementioned ejector pin. The traces 109 formed on the first die pad 10A are recessed from the back surface 102 of the first die pad 10A, and the traces 109 formed on the second die pad 10B are recessed from the back surface 102 of the second die pad 10B. Note that the traces 109 do not have to be formed on either the first die pad 10A or the second die pad 10B. The depths of the multiple traces 589 and the multiple traces 109 are, for example, smaller than the depths of the multiple recesses 581, but may be larger or the same. Note that the sealing resin 50 may not have the multiple traces 589.

[0027] 3 and 4 , the first die pad 10A and the second die pad 10B have a first end face 111, a second end face 112, a third end face 113, and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113, and the fourth end face 114 are covered with the sealing resin 50. The first end face 111 faces in the first direction x and extends in the second direction y. The first end face 111 is located closest to the pair of first side faces 53 of the sealing resin 50. The second end face 112 faces in the second direction y and extends in the first direction x. The second end face 112 is located closest to the second side face 54 of the sealing resin 50. The third end face 113 faces the opposite side to the second end face 112 in the second direction y and extends in the first direction x. The third end face 113 is located closest to the third side surface 55 of the sealing resin 50. The fourth end face 114 faces the opposite side to the first end face 111 in the first direction x and extends in the second direction y. As shown in Fig. 7 , a groove portion 57 is located between the fourth end face 114 of the first die pad 10A and the fourth end face 114 of the second die pad 10B.

[0028] 3 and 4 , the first die pad 10A and the second die pad 10B have second corner end faces 122. The second corner end face 122 is located between the first end face 111 and the third end face 113, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The second corner end face 122 is covered with the sealing resin 50, and is a flat surface that is inclined with respect to the first end face 111 and the third end face 113.

[0029] 3 and 4 , the first die pad 10A and the second die pad 10B have a third corner end face 123. The third corner end face 123 is located between the second end face 112 and the fourth end face 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The third corner end face 123 is covered with the sealing resin 50, and is a flat surface that is inclined with respect to the second end face 112 and the fourth end face 114.

[0030] 3 and 4 , the first die pad 10A and the second die pad 10B have a fourth corner end surface 124. The fourth corner end surface 124 is located between the third end surface 113 and the fourth end surface 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The fourth corner end surface 124 is covered with the sealing resin 50, and is a flat surface that is inclined with respect to the third end surface 113 and the fourth end surface 114.

[0031] Each of the first semiconductor element 21 and the second semiconductor element 22 is a switching element such as a transistor. As shown in FIG. 11 , the transistor in the semiconductor device A10 is a metal-oxide-semiconductor field-effect transistor (MOSFET), but may also be a bipolar transistor, an insulated gate bipolar transistor (IGBT), or the like. The circuit in FIG. 11 also illustrates a parasitic diode component built into each of the first semiconductor element 21 and the second semiconductor element 22. Each of the first semiconductor element 21 and the second semiconductor element 22 is, for example, an n-channel type, but may also be a p-channel type. Each of the first semiconductor element 21 and the second semiconductor element 22 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon (Si) or silicon carbide (SiC).

[0032] 3 and 7, the first semiconductor element 21 is mounted on the first die pad 10A. Preferably, the center of gravity of the first semiconductor element 21 overlaps with the center of the first die pad 10A in a plan view.

[0033] The first semiconductor element 21 has a first main surface 21a and a first back surface 21b. The first main surface 21a and the first back surface 21b are spaced apart in the thickness direction z. The first main surface 21a faces the same direction as the main surface 101 of the first die pad 10A. The first back surface 21b faces the opposite side to the first main surface 21a in the thickness direction z and faces the main surface 101 of the first die pad 10A.

[0034] 3 and 7, the first semiconductor element 21 is mounted on the first die pad 10A. As shown in Fig. 9, the first semiconductor element 21 has a first main surface electrode 211, a main surface electrode 212, and a back surface electrode 213.

[0035] The first principal surface electrode 211 is disposed on the first principal surface 21a. A current corresponding to the power converted by the first semiconductor element 21 flows through the first principal surface electrode 211. In an example in which the first semiconductor element 21 is a MOSFET, the first principal surface electrode 211 is, for example, a source electrode. The first principal surface electrode 211 includes a plurality of metal plating layers. The first principal surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first principal surface electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0036] The principal surface electrode 212 is disposed on the first principal surface 21 a. A first drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the principal surface electrode 212. In an example in which the first semiconductor element 21 is a MOSEFT, the principal surface electrode 212 is, for example, a gate electrode. In a plan view, the area of ​​the principal surface electrode 212 is smaller than the area of ​​the first principal surface electrode 211.

[0037] The back surface electrode 213 is disposed on the first back surface 21b. The back surface electrode 213 is provided opposite to the main surface 101 of the first die pad 10A. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the back surface electrode 213. In an example in which the first semiconductor element 21 is a MOSFET, the back surface electrode 213 is, for example, a drain electrode.

[0038] The second semiconductor element 22 is mounted on the main surface 101 of the second die pad 10B. Preferably, in a plan view, the center of gravity of the second semiconductor element 22 overlaps with the center of the second die pad 10B.

[0039] The second semiconductor element 22 has a second main surface 22a and a second back surface 22b. The second main surface 22a and the second back surface 22b are spaced apart in the thickness direction z. The second main surface 22a faces the same direction as the main surface 101 of the second die pad 10B. The second back surface 22b faces the opposite side to the second main surface 22a in the thickness direction z and faces the main surface 101 of the second die pad 10B.

[0040] 3 and 7, the second semiconductor element 22 is mounted on the second die pad 10B. As shown in Fig. 10, the second semiconductor element 22 has a second main surface electrode 221, a main surface electrode 222, and a back surface electrode 223.

[0041] The second principal surface electrode 221 is disposed on the second principal surface 22a. A current corresponding to the power converted by the second semiconductor element 22 flows through the second principal surface electrode 221. In an example in which the second semiconductor element 22 is a MOSFET, the second principal surface electrode 221 is, for example, a source electrode. Like the first principal surface electrode 211, the second principal surface electrode 221 includes multiple metal plating layers. The second principal surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0042] The principal surface electrode 222 is disposed on the second principal surface 22 a. A second drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the principal surface electrode 222. In an example in which the second semiconductor element 22 is a MOSEFT, the principal surface electrode 222 is, for example, a gate electrode. In a plan view, the area of ​​the principal surface electrode 222 is smaller than the area of ​​the second principal surface electrode 221.

[0043] The back surface electrode 223 is disposed on the second back surface 22b. The back surface electrode 223 is provided opposite to the main surface 101 of the second die pad 10B. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the back surface electrode 223. In an example in which the second semiconductor element 22 is a MOSFET, the back surface electrode 223 is, for example, a drain electrode.

[0044] The semiconductor device A10 further includes two die bonding layers 231 and 232. Each of the two die bonding layers 231 and 232 is electrically conductive. Each of the die bonding layers 231 and 232 is made of, for example, solder. Alternatively, each of the die bonding layers 231 and 232 may be made of sintered metal.

[0045] 7 and 9 , the die bonding layer 231 is interposed between the main surface 101 of the first die pad 10A and the back surface electrode 213 of the first semiconductor element 21. The die bonding layer 231 bonds the main surface 101 of the first die pad 10A to the back surface electrode 213 of the first semiconductor element 21. This establishes electrical conduction between the back surface electrode 213 of the first semiconductor element 21 and the first die pad 10A.

[0046] 7, 8, and 10, the die bonding layer 232 is interposed between the main surface 101 of the second die pad 10B and the back electrode 223 of the second semiconductor element 22. The die bonding layer 232 bonds the main surface 101 of the second die pad 10B to the back electrode 223 of the second semiconductor element 22. This establishes electrical continuity between the back electrode 223 of the second semiconductor element 22 and the second die pad 10B.

[0047] 3 , the multiple terminal leads 13 are located on the side opposite to the side where the second end surface 112 faces the first die pad 10A and the second die pad 10B in the second direction y. At least one of the multiple terminal leads 13 is electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 172, a sixth terminal lead 181, and a seventh terminal lead 182.

[0048] As shown in FIG. 3 , the first terminal lead 14 is located away from the first die pad 10A and the second die pad 10B in the second direction y and between the second terminal lead 15 and the third terminal lead 16 in the first direction x. The first terminal lead 14 extends along the second direction y. The first terminal lead 14 is electrically connected to the second main surface electrode 221 of the second semiconductor element 22. The first terminal lead 14 includes a covered portion 14A and an exposed portion 14B. As shown in FIG. 8 , the covered portion 14A is covered with the sealing resin 50. As shown in FIGS. 2 , 3 , 4 , and 5 , the exposed portion 14B is connected to the covered portion 14A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first die pad 10A and the second die pad 10B in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0049] As shown in FIG. 3 , the second terminal lead 15 includes a portion extending in the second direction y and is connected to the first die pad 10A. Therefore, the second terminal lead 15 is electrically connected to the back electrode 213 of the first semiconductor element 21 via the first die pad 10A. The second terminal lead 15 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The second terminal lead 15 includes a covering portion 15A and an exposed portion 15B. The covering portion 15A is connected to the third end surface 113 of the first die pad 10A and is covered with the sealing resin 50. When viewed along the first direction x, the covering portion 15A is bent. As shown in FIGS. 2 , 3 , 4 , and 5 , the exposed portion 15B is connected to the covering portion 15A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 15B is plated with, for example, tin.

[0050] As shown in FIG. 3 , the third terminal lead 16 includes a portion extending in the second direction y and is connected to the second die pad 10B. Therefore, the third terminal lead 16 is electrically connected to the back electrode 223 of the second semiconductor element 22 via the second die pad 10B. AC power converted by the first semiconductor element 21 and the second semiconductor element 22 is output from the third terminal lead 16. The third terminal lead 16 includes a covering portion 16A and an exposed portion 16B. The covering portion 16A is connected to the third end surface 113 of the second die pad 10B and is covered with the sealing resin 50. When viewed along the first direction x, the covering portion 16A is bent in the same manner as the covering portion 15A of the second terminal lead 15. As shown in FIGS. 2 , 3 , 4 , and 5 , the exposed portion 16B is connected to the covering portion 16A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 16B is plated with, for example, tin.

[0051] As shown in FIG. 3 , the fourth terminal lead 171 is located away from the first die pad 10A in the second direction y and on one side in the first direction x. As shown in FIG. 3 , the fifth terminal lead 172 is located away from the second die pad 10B in the second direction y and on the other side in the first direction x. The fourth terminal lead 171 is electrically connected to the main surface electrode 212 (gate electrode) of the first semiconductor element 21. A drive signal (gate voltage) for driving the first semiconductor element 21 is applied to the fourth terminal lead 171. The fifth terminal lead 172 is electrically connected to the main surface electrode 222 (gate electrode) of the second semiconductor element 22. A drive signal (gate voltage) for driving the second semiconductor element 22 is applied to the fifth terminal lead 172.

[0052] 3, the fourth terminal lead 171 includes a covered portion 171A and an exposed portion 171B. The covered portion 171A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 171B is plated with, for example, tin.

[0053] 3, the fifth terminal lead 172 includes a covered portion 172A and an exposed portion 172B. The covered portion 172A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 172B is plated with, for example, tin.

[0054] As shown in FIG. 3 , the sixth terminal lead 181 is located away from the first die pad 10A in the second direction y and is located between the second terminal lead 15 and the fourth terminal lead 171 in the first direction x. As shown in FIG. 3 , the seventh terminal lead 182 is located away from the second die pad 10B in the second direction y and is located between the third terminal lead 16 and the fifth terminal lead 172 in the first direction x. The sixth terminal lead 181 is electrically connected to the first main surface electrode 211 (source electrode) of the first semiconductor element 21. A voltage corresponding to the current flowing through the first main surface electrode 211 of the first semiconductor element 21 is applied to the sixth terminal lead 181. The seventh terminal lead 182 is electrically connected to the second main surface electrode 221 (source electrode) of the second semiconductor element 22. A voltage corresponding to the current flowing through the second main surface electrode 221 (source electrode) of the second semiconductor element 22 is applied to the seventh terminal lead 182.

[0055] 3, the sixth terminal lead 181 includes a covered portion 181A and an exposed portion 181B. The covered portion 181A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 181B is connected to the covered portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 181B is plated with, for example, tin.

[0056] 3, the seventh terminal lead 182 includes a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with the sealing resin 50. As shown in FIGS. 2, 3, 4, and 5, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 182B is plated with, for example, tin.

[0057] 5, in the semiconductor device A10, the heights of the exposed portions 14B of the first terminal lead 14, 15B of the second terminal lead 15, and 16B of the third terminal lead 16 are all the same. Furthermore, the thicknesses of these exposed portions are all the same. Therefore, when viewed along the first direction x, at least a portion (exposed portion 14B) of the first terminal lead 14 overlaps with each of the second terminal lead 15 and the third terminal lead 16 (see FIG. 6).

[0058] 3 , the first conductive member 31 is bonded to the first main surface electrode 211 of the first semiconductor element 21 and the second die pad 10B. This provides electrical continuity between the first main surface electrode 211 and the second die pad 10B and the back surface electrode 223 of the second semiconductor element 22. The first conductive member 31 contains copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. The first conductive member 31 has a first body portion 311, a first bonding portion 312, and a second bonding portion 313.

[0059] 3 , the first body portion 311 forms a main portion of the first conductive member 31. The first body portion 311 extends in the first direction x. In the illustrated example, the first body portion 311 extends linearly between the first semiconductor element 21 and the second semiconductor element 22 in a plan view. The first body portion 311 straddles the first die pad 10A and the second die pad 10B. In the illustrated example, the end of the first body portion 311 connected to the first bonding portion 312 is bifurcated.

[0060] As shown in FIGS. 3 , 4 , and 9 , the first bonding portion 312 is bonded to the first main surface electrode 211 of the first semiconductor element 21. The first bonding portion 312 includes two first strip portions 312 a. As shown in FIGS. 3 and 4 , the two first strip portions 312 a are spaced apart from each other in the second direction y. The longitudinal direction of each of the two first strip portions 312 a is the first direction x. The two first strip portions 312 a are arranged parallel to each other in a plan view. In the illustrated example, the end portion of the first main body portion 311 connected to the first bonding portion 312 is bifurcated and each bifurcated is connected to a corresponding one of the two first strip portions 312 a. Unlike this example, the end of the first main body portion 311 connected to the first joint portion 312 may not be bifurcated, and the first joint portion 312 may be a single rectangular portion (a configuration in which two first band-shaped portions 312a are connected). The area of ​​the first joint portion 312 in a plan view (the total area of ​​the two first band-shaped portions 312a) is, for example, 10% to 100% of the area of ​​the first principal surface electrode 211 in a plan view.

[0061] 3, the second bonding portion 313 is bonded to the second die pad 10B. The second bonding portion 313 extends in the second direction y. The second bonding portion 313 is connected to the first body portion 311. The second bonding portion 313 is located on the opposite side of the first bonding portion 312 with the first body portion 311 in between.

[0062] 7 and 9, the semiconductor device A10 further includes a first bonding layer 33. The first bonding layer 33 is interposed between the first main surface electrode 211 of the first semiconductor element 21 and the two first strip portions 312a of the first bonding portion 312. The first bonding layer 33 bonds the first main surface electrode 211 and the first bonding portion 312 (the two first strip portions 312a). The first bonding layer 33 is conductive. The first bonding layer 33 is, for example, solder. Alternatively, the first bonding layer 33 may be a sintered metal.

[0063] 7, the semiconductor device A10 further includes a second bonding layer 34. The second bonding layer 34 is interposed between the second die pad 10B and the second bonding portion 313. The second bonding layer 34 bonds the second die pad 10B and the second bonding portion 313. The second bonding layer 34 is conductive. The second bonding layer 34 is made of, for example, solder. Alternatively, the second bonding layer 34 may be made of sintered metal.

[0064] 3 , the second conductive member 32 is conductively joined to the second principal surface electrode 221 of the second semiconductor element 22 and the covering portion 14A of the first terminal lead 14. This establishes electrical continuity between the second principal surface electrode 221 and the first terminal lead 14. The second conductive member 32 contains copper. In the semiconductor device A10, the second conductive member 32 is a metal clip. The second conductive member 32 has a second body portion 321, a third joint portion 322, and a fourth joint portion 323.

[0065] 3, the second body portion 321 forms a main portion of the second conductive member 32. When viewed along the thickness direction z, the second body portion 321 is bent in a hook shape. When viewed along the thickness direction z, the first body portion 311 overlaps the main surface 101 of the second die pad 10B.

[0066] 3, the third bonding portion 322 is bonded to the covering portion 14A of the first terminal lead 14. The third bonding portion 322 extends in the first direction x. The third bonding portion 322 is connected to the second body portion 321. The third bonding portion 322 is located on the opposite side of the fourth bonding portion 323 with the second body portion 321 interposed therebetween.

[0067] As shown in FIGS. 3 and 10 , the fourth bonding portion 323 is bonded to the second main surface electrode 221 of the second semiconductor element 22. The fourth bonding portion 323 includes two second strip portions 323a. As shown in FIGS. 3 and 8 , the two second strip portions 323a are spaced apart from each other in the second direction y. The longitudinal direction of each of the two second strip portions 323a is the first direction x. The two second strip portions 323a are arranged parallel to each other in a plan view. In the illustrated example, the end portion of the second main body portion 321 connected to the fourth bonding portion 323 is bifurcated and each bifurcated is connected to a corresponding one of the two second strip portions 323a. Unlike this example, the end of the second main body portion 321 connected to the fourth joint portion 323 may not be bifurcated, and the fourth joint portion 323 may be a single rectangular portion (a configuration in which two second band portions 323a are connected). The area of ​​the fourth joint portion 323 in a plan view (the total area of ​​the two second band portions 323a) is, for example, 10% to 100% of the area of ​​the second principal surface electrode 221 in a plan view.

[0068] As shown in FIGS. 7 and 10 , the semiconductor device A10 further includes a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second main surface electrode 221 of the second semiconductor element 22 and the two second strip portions 323a of the fourth bonding portion 323. The fourth bonding layer 36 bonds the second main surface electrode 221 of the second semiconductor element 22 to the fourth bonding portion 323 (each of the two second strip portions 323a). The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is, for example, solder. Alternatively, the fourth bonding layer 36 may be a sintered metal.

[0069] Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B is, for example, a bonding wire. Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B contains gold. Additionally, each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B may contain copper or aluminum (Al).

[0070] 3, the first connecting member 41A is joined to the main surface electrode 212 of the first semiconductor element 21 and the covering portion 171A of the fourth terminal lead 171. This establishes electrical continuity between the fourth terminal lead 171 and the main surface electrode 212 of the first semiconductor element 21. As shown in FIG. 3, the first connecting member 41B is joined to the main surface electrode 222 of the second semiconductor element 22 and the covering portion 172A of the fifth terminal lead 172. This establishes electrical continuity between the fifth terminal lead 172 and the main surface electrode 222 of the second semiconductor element 22.

[0071] 3, the second connecting member 42A is joined to the first main surface electrode 211 of the first semiconductor element 21 and the covering portion 181A of the sixth terminal lead 181. This establishes electrical continuity between the sixth terminal lead 181 and the first main surface electrode 211 of the first semiconductor element 21. The second connecting member 42B is joined to the second main surface electrode 221 of the second semiconductor element 22 and the covering portion 182A of the seventh terminal lead 182. This establishes electrical continuity between the seventh terminal lead 182 and the second main surface electrode 221 of the second semiconductor element 22.

[0072] The first heat dissipation member 60A is a member for promoting heat dissipation from the first semiconductor element 21. The first heat dissipation member 60A includes a metal such as Al (aluminum), Cu (copper), or stainless steel. There are no particular limitations on the specific configuration of the first heat dissipation member 60A, and in this embodiment, the first heat dissipation member 60A has a first main body portion 61A and a plurality of first protrusions 62A.

[0073] 4 to 8, the first body portion 61A has a first main heat dissipation surface 611A and a second main heat dissipation surface 611B. The first main heat dissipation surface 611A faces the same side (upward) as the main surface 101 in the thickness direction z. The first main heat dissipation back surface 612A faces the opposite side to the first main heat dissipation surface 611A in the thickness direction z. The first main heat dissipation surface 611A faces the back surface 102 of the first die pad 10A. In the illustrated example, the first main heat dissipation surface 611A is larger than the back surface 102 of the first die pad 10A when viewed in the thickness direction z.

[0074] The first heat dissipation main surface 611A and the back surface 102 of the first die pad 10A are electrically connected by a first bonding layer 69A. The specific configuration of the first bonding layer 69A is not limited in any way. The first bonding layer 69A may be, for example, solder, Ag paste, Ag sintered material, or a solid-phase diffusion bonding layer. Depending on the method used to electrically connect the first heat dissipation main surface 611A and the back surface 102 of the first die pad 10A, the first bonding layer 69A may be integrated with either or both of the first die pad 10A and the first body portion 61A.

[0075] The multiple first protrusions 62A protrude in the thickness direction z from the first heat dissipation back surface 612A of the first main body portion 61A. The specific configuration of the multiple first protrusions 62A is not limited in any way. In the illustrated example, the multiple first protrusions 62A are each a plate-shaped portion extending along the first direction x. Unlike this example, the first protrusions 62A may be, for example, a column-shaped portion protruding in the thickness direction z.

[0076] The plurality of first protrusions 62A are exposed to a cooling fluid space 8. The cooling fluid space 8 is a space in which a cooling fluid for cooling the semiconductor device A10 is present. In the present disclosure, a non-conductive, insulating cooling fluid is employed. Examples of such cooling fluids include gases such as air, oils, and liquids such as fluorine-based inert liquids. In the case of the plurality of first protrusions 62A of this embodiment, it is reasonable for the cooling fluid to flow along the first direction x.

[0077] The second heat dissipation member 60B is a member for promoting heat dissipation from the second semiconductor element 22. The second heat dissipation member 60B includes a metal such as Al (aluminum), Cu (copper), or stainless steel. There are no particular limitations on the specific configuration of the second heat dissipation member 60B, and in this embodiment, the second heat dissipation member 60B has a second main body portion 61B and a plurality of second protrusions 62B.

[0078] 4 to 7, the second main body portion 61B has a second main heat dissipation surface 611B and a second main heat dissipation surface 612B. The second main heat dissipation surface 611B faces the same side (upward) as the main surface 101 in the thickness direction z. The second main heat dissipation back surface 612B faces the opposite side to the second main heat dissipation surface 611B in the thickness direction z. The second main heat dissipation surface 611B faces the back surface 102 of the second die pad 10B. In the illustrated example, the second main heat dissipation surface 611B is larger than the back surface 102 of the second die pad 10B when viewed in the thickness direction z.

[0079] The second main heat dissipation surface 611B and the back surface 102 of the second die pad 10B are electrically connected by a second bonding layer 69B. The specific configuration of the second bonding layer 69B is not limited in any way. The second bonding layer 69B may be, for example, solder, Ag paste, Ag sintered material, or a solid-phase diffusion bonding layer. Depending on the method used to electrically connect the second main heat dissipation surface 611B and the back surface 102 of the second die pad 10B, the second bonding layer 69B may be integrated with either or both of the second die pad 10B and the second body portion 61B.

[0080] Similar to the multiple first protrusions 62A shown in FIG. 8 , the multiple second protrusions 62B protrude in the thickness direction z from the second heat dissipation back surface 612B of the second main body portion 61B. The specific configuration of the multiple second protrusions 62B is not limited in any way. In the illustrated example, the multiple second protrusions 62B are each a plate-shaped portion extending along the first direction x. Unlike this example, the second protrusions 62B may be, for example, a columnar portion protruding in the thickness direction z.

[0081] The plurality of second protrusions 62B are exposed to the above-described cooling fluid space 8. In the case of the plurality of second protrusions 62B of this embodiment, it is reasonable to configure the cooling fluid to flow along the first direction x.

[0082] The insulating portion 70 insulates the first heat dissipation member 60A from the second heat dissipation member 60B. The insulating portion 70 is interposed between the first heat dissipation member 60A and the second heat dissipation member 60B. As shown in FIGS. 3 to 8 , the insulating portion 70 in this embodiment is separate from the sealing resin 50. The material of the insulating portion 70 is not limited in any way and includes, for example, an insulating resin. Examples of insulating resins include PPS (Poly Phenylene Sulfide) resin and PBT (Poly Butylene Terephthalate) resin.

[0083] The insulating portion 70 has an insulating principal surface 71 and an insulating back surface 72. The insulating principal surface 71 faces the same side as the first and second main heat dissipation surfaces 611A and 611B in the thickness direction z. The first and second main heat dissipation surfaces 611A and 611B are exposed from the insulating principal surface 71. The insulating back surface 72 faces the opposite side from the insulating principal surface 71 in the thickness direction z. A plurality of first protrusions 62A and a plurality of second protrusions 62B protrude from the insulating back surface 72. A portion of the first and second heat dissipation back surfaces 612A and 612B may be exposed from the insulating back surface 72. In the illustrated example, the insulating portion 70 also has a groove 77. The groove 77 is recessed from the insulating principal surface 71 in the thickness direction z and extends in the second direction y. When viewed along the thickness direction z, the groove portion 77 is located between the first main heat dissipation surface 611A and the second main heat dissipation surface 611B. When viewed along the thickness direction z, the groove portion 77 overlaps with the groove portion 57. Note that the insulating portion 70 may not have the groove portion 77.

[0084] The manufacturing method of the semiconductor device A10 is not limited in any way. For example, a process may be performed in which the first die pad 10A, the second die pad 10B, the first semiconductor element 21, the second semiconductor element 22, the plurality of terminal leads 13, the first conductive member 31, the second conductive member 32, at least a portion of the first connecting members 41A and 41B, and at least a portion of the second connecting members 42A and 42B are covered with the sealing resin 50. Also, a process may be performed in which a portion of the first heat dissipation member 60A and a portion of the second heat dissipation member 60B are covered with the insulating portion 70. This process may be followed by a process in which the back surface 102 of the first die pad 10A is electrically connected to the first main heat dissipation surface 611A, and a process in which the back surface 102 of the second die pad 10B is electrically connected to the second main heat dissipation surface 611B.

[0085] The first heat dissipation member 60A, the second heat dissipation member 60B, and the insulating portion 70 may have portions other than those shown in the drawings so that the cooling fluid space 8 is configured to allow the cooling fluid to flow appropriately. Furthermore, a cooler or the like through which the cooling fluid flows may be configured by combining members (not shown) other than the first heat dissipation member 60A, the second heat dissipation member 60B, and the insulating portion 70.

[0086] 11 , in the semiconductor device A10 configured as described above, the first main surface electrode 211 of the first semiconductor element 21 and the back surface electrode 223 of the second semiconductor element 22 are electrically connected to each other. Therefore, the semiconductor device A10 configures a half-bridge circuit using two transistors (the first semiconductor element 21 and the second semiconductor element 22).

[0087] Next, a vehicle B equipped with the semiconductor device A10 according to the present disclosure will be described with reference to Fig. 12. The vehicle B is, for example, an electric vehicle (EV).

[0088] As shown in Figure 49, vehicle B includes an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is equipped with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600V.

[0089] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The semiconductor device A10 constitutes part of the inverter 831. Power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. Unlike the power system shown in FIG. 24 , a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831, including the semiconductor device A10, is connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B. This drives vehicle B. To drive vehicle B, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of accelerator pedal fluctuation. Therefore, semiconductor device A10 in inverter 831 is necessary to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0090] The functions and effects of the semiconductor device A10 according to the first embodiment are as follows.

[0091] In the semiconductor device A10, the first heat dissipation member 60A and the second heat dissipation member 60B are insulated from each other. Therefore, even if the first die pad 10A is electrically connected to the first heat dissipation member 60A and the second die pad 10B is electrically connected to the second heat dissipation member 60B, it is possible to prevent the first die pad 10A and the second die pad 10B from being unduly electrically connected to each other. Therefore, there is no need to interpose an insulator between the first die pad 10A and the first heat dissipation member 60A, or between the second die pad 10B and the second heat dissipation member 60B. This allows heat from the first semiconductor element 21 to be more efficiently dissipated via the first die pad 10A and the first heat dissipation member 60A, and heat from the second semiconductor element 22 to be more efficiently dissipated via the second die pad 10B and the second heat dissipation member 60B. This enhances heat dissipation from the semiconductor device A10.

[0092] The plurality of first protrusions 62A and the plurality of second protrusions 62B are exposed to the cooling fluid space 8. An insulating cooling fluid is present in the cooling fluid space 8. This allows heat to be dissipated more efficiently from the plurality of first protrusions 62A and the plurality of second protrusions 62B while preventing the first heat dissipation member 60A and the second heat dissipation member 60B from being unduly electrically connected to each other.

[0093] The insulating portion 70 is separate from the sealing resin 50. Therefore, after forming the sealing resin 50, it is possible to electrically connect the first heat dissipation member 60A and the second heat dissipation member 60B, which are integrated by the insulating portion 70, to the first die pad 10A and the second die pad 10B. This is preferable for improving manufacturing efficiency.

[0094] The semiconductor device A10 includes a first semiconductor element 21, a second semiconductor element 22, and a sealing resin 50. The sealing resin 50 covers the first semiconductor element 21 and the second semiconductor element 22. According to this configuration, the semiconductor device A10 has two semiconductor elements (the first semiconductor element 21 and the second semiconductor element 22) packaged in a single sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on a circuit board on which the semiconductor device A10 is mounted.

[0095] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0096] 13 shows a first modification of the semiconductor device A10. The semiconductor device A11 of this modification differs from the semiconductor device A10 in that it includes a plurality of first die pads 10A, a plurality of second die pads 10B, a plurality of sealing resins 50, a plurality of first heat dissipation members 60A, and a plurality of second heat dissipation members 60B.

[0097] The mutual configuration of one first die pad 10A, one second die pad 10B, one first body portion 61A, and one second heat dissipation member 60B is the same as that of the semiconductor device A10 described above. One first die pad 10A and one second die pad 10B are covered with one sealing resin 50. In the figure, three sealing resins 50 are lined up at intervals in the first direction x.

[0098] The three first heat dissipation members 60A and the three second heat dissipation members 60B are arranged alternately in the first direction x, corresponding to the three first die pads 10A and the three second die pads 10B. The insulating portion 70 insulates the three first heat dissipation members 60A and the three second heat dissipation members 60B from each other.

[0099] This modification also promotes heat dissipation. As can be seen from this modification, there is no limitation on the numbers of the first die pad 10A, the second die pad 10B, the first heat dissipation members 60A, the second heat dissipation members 60B, etc. The semiconductor device A11 is suitable for use as an inverter corresponding to three phases, for example, U phase, V phase, and W phase.

[0100] 14 shows a second modification of the semiconductor device A 10. In the semiconductor device A12 of this modification, the sealing resin 50 and the insulating portion 70 are integrally formed.

[0101] In manufacturing the semiconductor device A12, for example, after completing the conductive joining between the first die pad 10A and the first heat dissipation member 60A and the conductive joining between the second die pad 10B and the second heat dissipation member 60B, the sealing resin 50 and the insulating portion 70 are formed all at once, for example, by mold molding.

[0102] This modification also facilitates heat dissipation. As can be seen from this modification, the sealing resin 50 and the insulating portion 70 may be separate bodies or may be formed integrally.

[0103] 15 and 16 show a semiconductor device A13 according to a third modification of the first embodiment. The semiconductor device A13 differs from the semiconductor device A10 in the following respect: the first semiconductor element 21 of the semiconductor device A13 is a diode rather than a transistor.

[0104] The first semiconductor element 21 of the semiconductor device A13 has a first main surface electrode 211 and a back surface electrode 213. As shown in Fig. 15, the first semiconductor element 21 of the semiconductor device A13 does not have a main surface electrode 212. As shown in Fig. 16, the first semiconductor element 21 of the semiconductor device A13 is a diode, in which the first main surface electrode 211 is, for example, an anode electrode, and the back surface electrode 213 is, for example, a cathode electrode.

[0105] As shown in FIG. 15 , the semiconductor device A13 does not include either the first connecting member 41A or the pair of second connecting members 42A and 42B. In this configuration, as shown in FIGS. 15 and 16 , the fourth terminal lead 171, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A13, the fourth terminal lead 171, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. Note that, in the example shown in FIG. 15 , the semiconductor device A13 does not include either the pair of second connecting members 42A and 42B, but in a configuration different from this example, the semiconductor device A13 may include the pair of second connecting members 42A and 42B similar to the semiconductor device A10.

[0106] 16 , in the semiconductor device A13, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the back surface electrode 223 (drain electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A13, with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15, the high-voltage side serves as a diode and the low-voltage side serves as a transistor. The semiconductor device A13 is used, for example, as a boost chopper circuit.

[0107] 17 and 18 show a semiconductor device A14 according to a fourth modification of the first embodiment. The semiconductor device A14 differs from the semiconductor device A10 in the following respect: the second semiconductor element 22 of the semiconductor device A14 is a diode rather than a transistor.

[0108] The second semiconductor element 22 of the semiconductor device A14 has a second main surface electrode 221 and a back surface electrode 223. As shown in Fig. 17, the second semiconductor element 22 of the semiconductor device A14 does not have a main surface electrode 222. As shown in Fig. 18, the second semiconductor element 22 of the semiconductor device A14 is a diode, in which the second main surface electrode 221 is, for example, an anode electrode, and the back surface electrode 223 is, for example, a cathode electrode.

[0109] As shown in FIG. 17 , the semiconductor device A14 does not include either the first connecting member 41B or the pair of second connecting members 42A and 42B. In this configuration, as shown in FIGS. 17 and 18 , the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A14, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. Note that, in the example shown in FIG. 17 , the semiconductor device A14 does not include either the pair of second connecting members 42A and 42B, but in a configuration different from this example, the semiconductor device A14 may include the pair of second connecting members 42A and 42B similar to the semiconductor device A10.

[0110] 18 , in the semiconductor device A14, the first main surface electrode 211 (source electrode) of the first semiconductor element 21 and the back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A14, with respect to the DC voltage applied between the first terminal lead 14 and the second terminal lead 15, the high-voltage side serves as a transistor and the low-voltage side serves as a diode. The semiconductor device A14 is used, for example, as a step-down chopper circuit.

[0111] 19 and 20 show a semiconductor device A15 according to a fifth modification of the first embodiment. The semiconductor device A15 differs from the semiconductor device A10 in the following respect: each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A15 is a diode rather than a transistor.

[0112] The first semiconductor element 21 of the semiconductor device A15 has a first main surface electrode 211 and a back surface electrode 213. As shown in FIG. 19 , the first semiconductor element 21 of the semiconductor device A15 does not have a main surface electrode 212. As shown in FIG. 20 , the first semiconductor element 21 of the semiconductor device A15 is a diode, with the first main surface electrode 211 being an anode electrode and the back surface electrode 213 being a cathode electrode. The second semiconductor element 22 of the semiconductor device A15 has a second main surface electrode 221 and a back surface electrode 223. As shown in FIG. 19 , the second semiconductor element 22 of the semiconductor device A15 does not have a main surface electrode 222. As shown in FIG. 20 , the second semiconductor element 22 of the semiconductor device A15 is a diode, with the second main surface electrode 221 being an anode electrode and the back surface electrode 223 being a cathode electrode.

[0113] As shown in FIG. 19 , the semiconductor device A15 does not include a pair of first connecting members 41A, 41B or a pair of second connecting members 42A, 42B. In this configuration, as shown in FIGS. 19 and 20 , the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A15, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are non-connect terminals. Note that, in the example shown in FIG. 19 , the semiconductor device A15 does not include a pair of second connecting members 42A, 42B. However, in a configuration different from this example, the semiconductor device A15 may include a pair of second connecting members 42A, 42B similar to that of the semiconductor device A10.

[0114] 20 , in the semiconductor device A15, the first principal surface electrode 211 (anode electrode) of the first semiconductor element 21 and the back surface electrode 223 (cathode electrode) of the second semiconductor element 22 are electrically connected. In the semiconductor device A15, both the high-voltage side and the low-voltage side are diodes with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15. The semiconductor device A15 is a diode bridge circuit.

[0115] These modifications also provide the same effects as the semiconductor device A10.

[0116] As can be seen from the semiconductor device A10 and semiconductor devices A13 to A15, the semiconductor device of the present disclosure can be combined with the first semiconductor element 21 and the second semiconductor element 22 to form four types of power conversion circuits (a transistor bridge circuit, a step-up chopper circuit, a step-down chopper circuit, and a diode bridge circuit). Meanwhile, the configurations of the terminal leads 13 and the sealing resin 50 are common to the semiconductor device A10 and the semiconductor devices A13 to A15. Therefore, the semiconductor device of the present disclosure can form any of the four types of power conversion circuits while maintaining the same package appearance. Furthermore, the semiconductor device of the present disclosure can utilize the same configurations of the terminal leads 13 and the sealing resin 50 even if the first semiconductor element 21 and the second semiconductor element 22 are transistors or diodes. This allows the semiconductor device of the present disclosure to share a common package structure regardless of the four types of power conversion circuits described above, which is advantageous in terms of improving productivity.

[0117] 21 and 22 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A20 of this embodiment is shown. The semiconductor device A20 differs from the semiconductor device A10 described above in terms of the electrical conduction relationship between the first semiconductor element 21 and the second semiconductor element 22. Furthermore, in the description of the semiconductor device A20 and subsequent descriptions, the reference numerals of the various parts of the first conductive member 31 are defined independently of those of the semiconductor device A10.

[0118] 21 , the first conductive member 31 electrically connects the first main surface electrode 211 of the first semiconductor element 21, the second main surface electrode 221 of the second semiconductor element 22, and the first terminal lead 14. The first conductive member 31 is a metal plate. The first conductive member 31 is a metal clip. The first conductive member 31 is composed of, for example, copper. The first conductive member 31 is covered with a sealing resin 50. The first conductive member 31 includes a first bonding portion 316, a second bonding portion 317, a third bonding portion 318, a first connecting portion 314, and a second connecting portion 315.

[0119] As shown in FIG. 21 , the first bonding portion 316 is bonded to the first main surface electrode 211 of the first semiconductor element 21. The first bonding portion 316 includes two strip-shaped portions 316a. The longitudinal direction of each of the two strip-shaped portions 316a is the first direction x. The two strip-shaped portions 316a are arranged parallel to each other in a plan view. Note that the first bonding portion 316 does not have to be separated into two strip-shaped portions 316a.

[0120] As shown in FIG. 21 , the second bonding portion 317 is bonded to the second main surface electrode 221 of the second semiconductor element 22. The second bonding portion 317 includes two strip-shaped portions 317a. The longitudinal direction of each of the two strip-shaped portions 317a is the first direction x. The two strip-shaped portions 317a are arranged parallel to each other in a plan view. Note that the second bonding portion 317 does not have to be separated into two strip-shaped portions 317a.

[0121] 21, the third bonding portion 318 is bonded to the covering portion 14A of the first terminal lead 14. The third bonding portion 318 extends in the first direction x.

[0122] 21, the first connecting portion 314 is connected to the first bonding portion 316 and the second bonding portion 317. In the semiconductor device A20, the first connecting portion 314 has a strip shape extending in the first direction x in a plan view.

[0123] 21 , the second connecting portion 315 is connected to the first connecting portion 314 and the third bonding portion 318. In the semiconductor device A20, the second connecting portion 315 is strip-shaped extending in the second direction y in a plan view. The second connecting portion 315 extends from the first connecting portion 314 in the second direction y and is connected to the third bonding portion 318. In this embodiment, the second connecting portion 315 is connected to the center of the main body portion 314a of the first connecting portion 314 in the first direction x.

[0124] 22 , in the semiconductor device A20 configured as described above, the first main surface electrode 211 of the first semiconductor element 21 and the second main surface electrode 221 of the second semiconductor element 22 are electrically connected to each other and are also commonly connected to the first terminal lead 14. In an example in which both the first semiconductor element 21 and the second semiconductor element 22 are MOSFETs, the semiconductor device A20 forms a circuit (a source-common-connected circuit) in which the source electrodes of the two MOSFETs are commonly connected to one terminal (the first terminal lead 14).

[0125] This embodiment also facilitates heat dissipation from the semiconductor device A20. As can be understood from this embodiment, the configuration of the electric circuit included in the semiconductor device according to the present disclosure is not limited in any way.

[0126] 23 and 24 show a semiconductor device A21 according to a first modification of the second embodiment. The semiconductor device A21 differs from the semiconductor device A20 in the following respect: the first semiconductor element 21 of the semiconductor device A21 is a diode rather than a transistor.

[0127] The first semiconductor element 21 of the semiconductor device A21 has a first main surface electrode 211 and a back surface electrode 213. As shown in Fig. 23, the first semiconductor element 21 of the semiconductor device A21 does not have a main surface electrode 212. As shown in Fig. 24, the first semiconductor element 21 of the semiconductor device A21 is a diode, in which the first main surface electrode 211 is, for example, an anode electrode, and the back surface electrode 213 is, for example, a cathode electrode.

[0128] As shown in Figure 23, the semiconductor device A21 does not include either the first connecting member 41A or the second connecting member 42A. In this configuration, as shown in Figures 23 and 24, the fourth terminal lead 171 and the sixth terminal lead 181 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22, respectively. Therefore, in the semiconductor device A21, the fourth terminal lead 171 and the sixth terminal lead 181 are non-connect terminals. Note that, unlike the example shown in Figures 23 and 24, the semiconductor device A21 does not need to further include the second connecting member 42B. In this case, the seventh terminal lead 182 also becomes a non-connect terminal.

[0129] 24 , in the semiconductor device A21, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (source electrode) of the second semiconductor element 22 are electrically connected. That is, in the semiconductor device A15, the anode electrode of the diode and the source electrode of the MOSFET are commonly connected to the first terminal lead 14.

[0130] 25 and 26 show a semiconductor device A22 according to a second modification of the second embodiment. The semiconductor device A22 differs from the semiconductor device A20 in the following respect: each of the first semiconductor element 21 and the second semiconductor element 22 of the semiconductor device A22 is a diode rather than a transistor.

[0131] The first semiconductor element 21 of the semiconductor device A22 has a first main surface electrode 211 and a back surface electrode 213. As shown in FIG. 25, the first semiconductor element 21 of the semiconductor device A22 does not have a main surface electrode 212. As shown in FIG. 26, the first semiconductor element 21 of the semiconductor device A22 is a diode, with the first main surface electrode 211 being an anode electrode and the back surface electrode 213 being a cathode electrode. The second semiconductor element 22 of the semiconductor device A22 has a second main surface electrode 221 and a back surface electrode 223. As shown in FIG. 25, the second semiconductor element 22 of the semiconductor device A22 does not have a main surface electrode 222. As shown in FIG. 26, the second semiconductor element 22 of the semiconductor device A22 is a diode, with the second main surface electrode 221 being an anode electrode and the back surface electrode 223 being a cathode electrode.

[0132] 25 , the semiconductor device A22 does not include either a pair of first connecting members 41A, 41B or a pair of second connecting members 42A, 42B. In this configuration, as shown in FIGS. 25 and 26 , the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are not electrically connected to either the first semiconductor element 21 or the second semiconductor element 22. Therefore, in the semiconductor device A22, the fourth terminal lead 171, the fifth terminal lead 172, the sixth terminal lead 181, and the seventh terminal lead 182 are each non-connect terminals.

[0133] 26, in the semiconductor device A22, the first main surface electrode 211 (anode electrode) of the first semiconductor element 21 and the second main surface electrode 221 (anode electrode) of the second semiconductor element 22 are electrically connected. In other words, the semiconductor device A22 has a circuit configuration in which the anode electrodes of the two diodes are commonly connected to the first terminal lead 14. The semiconductor devices A21 and A22 have a common configuration with the semiconductor device A20 and therefore achieve the same effects as the semiconductor device A20.

[0134] As can be seen from the semiconductor devices A20 to A22, the semiconductor device of the present disclosure can configure, for example, three types of circuits (a circuit in which the source electrodes of two MOSFETs are commonly connected, a circuit in which the source electrode of a MOSFET and the anode electrode of a diode are commonly connected, and a circuit in which the anode electrodes of two diodes are commonly connected) in addition to the four types of circuits in the first embodiment by combining the first semiconductor element 21 and the second semiconductor element 22. Meanwhile, the configurations of the terminal leads 13 and the sealing resin 50 are common to the semiconductor devices A20 to A22. Therefore, the semiconductor device of the present disclosure can configure any of multiple types of circuits while maintaining the same package appearance. Furthermore, the semiconductor device of the present disclosure can utilize the configurations of the terminal leads 13 and the sealing resin 50 as they are, even if the first semiconductor element 21 and the second semiconductor element 22 are transistors or diodes. This allows the semiconductor device of the present disclosure to use a common package structure for any of multiple types of circuits, which is advantageous in terms of improving productivity.

[0135] The semiconductor device according to the present invention is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present invention can be freely modified in various ways.

[0136] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a first die pad; a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin covering a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element, and further comprising: a first heat dissipation member conductively joined to the first die pad; a second heat dissipation member conductively joined to the second die pad; and an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and insulates the first heat dissipation member from the second heat dissipation member. Appendix 2. The semiconductor device according to Appendix 1, wherein the sealing resin and the insulating portion are separate bodies. Appendix 3. The semiconductor device according to Appendix 1, wherein the sealing resin and the insulating portion are integrally formed. Appendix 4. The semiconductor device according to any one of Supplements 1 to 3, wherein the first heat dissipation member includes a first body portion that is conductively bonded to the first die pad, and a plurality of first protrusions protruding from the first body portion on a side opposite to the first die pad.Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the plurality of first protrusions are exposed, and a cooling fluid space for allowing an insulating cooling fluid to reside therein.Supplementary Note 6. The semiconductor device according to any one of Supplements 1 to 4, wherein the second heat dissipation member includes a second body portion that is conductively bonded to the second die pad, and a plurality of second protrusions protruding from the second body portion on a side opposite to the second die pad.Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the plurality of second protrusions are exposed, and a cooling fluid space for allowing an insulating cooling fluid to reside therein.Supplementary Note 8. The semiconductor device according to any one of Supplements 1 to 7, wherein the first die pad and the second die pad are aligned in a first direction intersecting their respective thickness directions.Supplementary Note 9. The semiconductor device according to claim 8, further comprising a first terminal lead spaced apart from the first die pad and the second die pad and projecting in a second direction intersecting both the thickness direction and the first direction. 10. The semiconductor device according to claim 9, further comprising a second terminal lead connected to the first die pad and projecting in the second direction.Appendix 11. The semiconductor device according to Appendix 10, further comprising a third terminal lead connected to the second die pad and protruding in the second direction. Appendix 12. The semiconductor device according to Appendix 11, wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction. Appendix 13. The semiconductor device according to any of Appendixes 1 to 12, wherein at least one of the first semiconductor element and the second semiconductor element is a switching element. Appendix 14. The semiconductor device according to Appendix 13, wherein the first semiconductor element and the second semiconductor element form a half-bridge circuit. Appendix 15. The semiconductor device according to any of Appendixes 1 to 12, wherein at least one of the first semiconductor element and the second semiconductor element is a diode. Appendix 16. The semiconductor device according to any of Appendixes 1 to 15, wherein the insulating portion includes a resin. Appendix 17. A vehicle comprising: a drive source; and the semiconductor device according to Appendix 1, wherein the semiconductor device is electrically connected to the drive source.

[0137] A10 to A15, A17, A20 to A22: semiconductor device 8: cooling fluid space 10A: first die pad 10B: second die pad 13: terminal lead 14: first terminal lead 14A: covering portion 14B: exposed portion 15: second terminal lead 15A: covering portion 15B: exposed portion 16: third terminal lead 16A: covering portion 16B: exposed portion 21: first semiconductor element 21a: first main surface 21b: first back surface 22: second semiconductor element 22a: second main surface 22b: second back surface 31: first conductive member 32: second conductive member 33: first bonding layer 34: second bonding layer 36: fourth bonding layer 41A: first connecting member 41B: first connecting member 42A: second connecting member 42B: second connecting member 50: Sealing resin 51: Resin main surface 52: Resin back surface 53: First side surface 54: Second side surface 55: Third side surface 56: Recess 57: Groove 60A: First heat dissipation member 60B: Second heat dissipation member 61A: First main body portion 61B: Second main body portion 62A: First protrusion 62B: Second protrusion 69A: First bonding layer 69B: Second bonding layer 70: Insulating portion 71: Insulating main surface 72: Insulating back surface 77: Groove 81: On-board charger 82: Storage battery 83: Drive system 101: Main surface 102: Back surface 109: Trace 111: First end surface 112: Second end surface 113: Third end surface 114: Fourth end surface 122: Second corner end surface 123: Third corner end surface 124: Fourth corner end face 171: Fourth terminal lead 171A: Covered portion 171B: Exposed portion 172: Fifth terminal lead 172A: Covered portion 172B: Exposed portion 181: Sixth terminal lead 181A: Covered portion 181B: Exposed portion 182: Seventh terminal lead 182A: Covered portion 182B: Exposed portion 211: First principal surface electrode 212: Principal surface electrode 213: Back surface electrode 221: Second principal surface electrode 222: Principal surface electrode 223: Back surface electrode 231: Die bonding layer 232: Die bonding layer 311: First main body portion 311a: Strip-shaped portion 312: First bonding portion 312a: First strip-shaped portion 313: Second bonding portion 314: First connecting portion 314a: Main body portion315: Second connecting portion 321: Second main body portion 322: Third joint portion 323: Fourth joint portion 323a: Second band-shaped portion 581: Recess 582: Recess 589: Trace 611A: First heat-dissipating main surface 611B: Second heat-dissipating main surface 612A: First heat-dissipating rear surface 612B: Second heat-dissipating rear surface 831: Inverter 832: Driving source B: Vehicle x: First direction y: Second direction z: Thickness direction

Claims

1. a first die pad; a second die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; a sealing resin that covers a portion of the first die pad, a portion of the second die pad, the first semiconductor element, and the second semiconductor element; a first heat dissipation member electrically connected to the first die pad; a second heat dissipation member electrically connected to the second die pad; the semiconductor device further comprising: an insulating portion that exposes a portion of the first heat dissipation member and a portion of the second heat dissipation member and that insulates the first heat dissipation member from the second heat dissipation member.

2. The semiconductor device according to claim 1 , wherein the sealing resin and the insulating portion are separate bodies.

3. The semiconductor device according to claim 1 , wherein said sealing resin and said insulating portion are integrally formed.

4. 4. The semiconductor device according to claim 1, wherein the first heat dissipation member includes a first body portion that is conductively joined to the first die pad, and a plurality of first protrusions that protrude from the first body portion on the side opposite the first die pad.

5. The semiconductor device of claim 4 , wherein the plurality of first protrusions are exposed and comprise a cooling fluid space for the presence of an insulating cooling fluid.

6. 4. The semiconductor device according to claim 1, wherein the second heat dissipation member includes a second body portion that is conductively joined to the second die pad, and a plurality of second protrusions that protrude from the second body portion on the side opposite the second die pad.

7. The semiconductor device of claim 6 , wherein the plurality of second protrusions are exposed and comprise a cooling fluid space for the presence of an insulating cooling fluid.

8. 4. The semiconductor device according to claim 1, wherein the first die pad and the second die pad are aligned in a first direction intersecting with their respective thickness directions.

9. 9. The semiconductor device according to claim 8, further comprising a first terminal lead that is spaced apart from the first die pad and the second die pad and that protrudes in a second direction that intersects both the thickness direction and the first direction.

10. The semiconductor device according to claim 9 , further comprising a second terminal lead connected to said first die pad and protruding in said second direction.

11. The semiconductor device according to claim 10 , further comprising a third terminal lead connected to the second die pad and protruding in the second direction.

12. The semiconductor device according to claim 11 , wherein the first terminal lead is located between the second terminal lead and the third terminal lead in the first direction.

13. 4. The semiconductor device according to claim 1, wherein at least one of said first semiconductor element and said second semiconductor element is a switching element.

14. The semiconductor device according to claim 13 , wherein the first semiconductor element and the second semiconductor element form a half-bridge circuit.

15. 4. The semiconductor device according to claim 1, wherein at least one of the first semiconductor element and the second semiconductor element is a diode.

16. 4. The semiconductor device according to claim 1, wherein the insulating portion includes a resin.

17. A driving source; The semiconductor device according to claim 1, The semiconductor device is electrically connected to the drive source.