Radiation-sensitive composition, resist pattern formation method, polymer and method for producing same, and compound

JPWO2025009429A1Pending Publication Date: 2025-01-09
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Patent Information

Application Number
JP2025531500
Authority / Receiving Office
JP · JP
Patent Type
Applications
Priority Date
2023-07-06
Filing Date
2024-06-24
Publication Date
2025-01-09

AI Technical Summary

Technical Problem

Current radiation-sensitive compositions for lithography struggle to achieve a well-balanced improvement in sensitivity, resolution, and Line Width Roughness (LWR) performance, especially in forming fine resist patterns with line widths of 40 nm or less.

Method used

A radiation-sensitive composition containing a polymer with a specific molecular structure, represented by formula (1), which includes a divalent group that can be cleaved by acid, and a compound acting as a reversible addition-fragmentation chain transfer agent, allowing for improved sensitivity and LWR performance through controlled acid-generated reactions.

Benefits of technology

The composition effectively enhances sensitivity, resolution, and LWR performance, enabling the formation of fine resist patterns with improved lithography characteristics.

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Abstract

This radiation-sensitive composition contains a polymer represented by formula (1). In formula (1), A1 and A2 each independently represent a group represented by formula (a-1), formula (a-2), formula (a-3), or formula (a-4). B1 represents a divalent group having a partial structure by which the bond between A1 and A2 mediated by B1 can be cut by the action of an acid. P1 and P2 are each independently a molecule chain.
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