Semiconductor device and power conversion apparatus

Abstract

A semiconductor device (1) is provided with a printed wiring board (10), a semiconductor element (20), an RC snubber circuit (30), and sealing resin (40). The RC snubber circuit (30) includes a resistive element (31) and a capacitive element (32). The semiconductor element (20) is disposed so as to overlap the printed wiring board (10). The RC snubber circuit (30) is disposed so as to overlap the printed wiring board (10). The semiconductor element (20) and the RC snubber circuit (30) are disposed at different positions in a direction overlapping the printed wiring board (10). The sealing resin (40) seals the semiconductor element (20) and the RC snubber circuit (30).

Description

Semiconductor device and power conversion device

[0001] The present disclosure relates to a semiconductor device and a power conversion device.

[0002] In order to reduce the inductance within the semiconductor device, a semiconductor device including an RC snubber circuit connected in parallel to a semiconductor element has been proposed. For example, Japanese Patent Laid-Open Publication No. 2018-116962 (Patent Document 1) describes a semiconductor device in which a semiconductor element and an RC snubber circuit are mounted on a substrate.

[0003] JP 2018-116962 A

[0004] In the semiconductor device described in the above publication, the semiconductor element and the RC snubber circuit are mounted on the same surface of the substrate, which poses a problem that the footprint is larger by the size of the RC snubber circuit than when only the semiconductor element is mounted on the substrate.

[0005] The present disclosure has been made in consideration of the above-mentioned problems, and its purpose is to provide a semiconductor device and a power conversion device that can reduce inductance and prevent the footprint from expanding.

[0006] The semiconductor device disclosed herein includes a printed wiring board, a semiconductor element mounted on the printed wiring board, an RC snubber circuit mounted on the printed wiring board and electrically connected in parallel to the semiconductor element, and a sealing resin that forms a housing. The RC snubber circuit includes a resistive element and a capacitive element. The resistive element and the capacitive element are electrically connected in series. The semiconductor element is arranged so as to overlap the printed wiring board. The RC snubber circuit is arranged so as to overlap the printed wiring board. The semiconductor element and the RC snubber circuit are arranged at different positions in the direction overlapping the printed wiring board. The sealing resin seals the semiconductor element and the RC snubber circuit.

[0007] According to the semiconductor device of the present disclosure, it is possible to reduce the inductance and prevent the footprint from expanding.

[0008] 1 is a cross-sectional view schematically showing a configuration of a semiconductor device according to a first embodiment. FIG. 2 is a top perspective view schematically showing a configuration of a semiconductor device according to the first embodiment. FIG. 3 is a circuit diagram of the semiconductor device according to the first embodiment. FIG. 4 is a cross-sectional view schematically showing a configuration of a comparative example of the semiconductor device. FIG. 5 is a top perspective view schematically showing a configuration of a comparative example of the semiconductor device. FIG. 6 is a cross-sectional view schematically showing a configuration in which solder is embedded inside a through-hole of a semiconductor device according to a second embodiment. FIG. 7 is a cross-sectional view schematically showing a configuration in which resin is embedded inside a through-hole of a semiconductor device according to the second embodiment. FIG. 8 is a cross-sectional view schematically showing a configuration of a semiconductor device according to a third embodiment. FIG. 9 is a top view schematically showing a configuration of a semiconductor device according to the third embodiment. FIG. 10 is a cross-sectional view schematically showing a configuration of a semiconductor device according to a fourth embodiment. FIG. 11 is a block diagram showing a configuration of a power conversion system to which a power conversion device according to a fifth embodiment is applied.

[0009] Hereinafter, an embodiment will be described with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals and description thereof will not be repeated.

[0010] First Embodiment The configuration of a semiconductor device 1 according to a first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a cross-sectional view schematically showing the configuration of the semiconductor device 1 according to the first embodiment. Figure 2 is a top perspective view schematically showing the configuration of the semiconductor device 1 according to the first embodiment. For convenience of explanation, Figure 2 illustrates a substrate 11, a back electrode pattern 13, a semiconductor element 20, a resistive element 31, and a capacitive element 32, which will be described later.

[0011] The semiconductor device 1 according to the first embodiment includes a printed wiring board 10, a semiconductor element 20, an RC snubber circuit 30, and a sealing resin 40. In this embodiment, the semiconductor device 1 includes a plurality of semiconductor elements 20. Furthermore, the semiconductor device 1 includes a control terminal 50, a copper post 60, a surface electrode 70, a bonding material 80, and an insulating substrate 90. In this embodiment, the semiconductor device 1 includes a plurality of control terminals 50, a plurality of copper posts 60, a plurality of surface electrodes 70, and a plurality of bonding materials 80.

[0012] The printed wiring board 10 includes a substrate 11, a surface electrode pattern 12, and a back electrode pattern 13. The substrate 11 has a surface 11a and a back surface 11b. The surface electrode pattern 12 is disposed on the surface 11a of the substrate 11. The back electrode pattern 13 is disposed on the back surface 11b of the substrate 11. The surface electrode pattern 12 and the back electrode pattern 13 each include a P electrode pattern (P), an N electrode pattern (N), and an AC electrode pattern (AC). In this embodiment, the printed wiring board 10 is a thick copper printed wiring board. The substrate 11 is a prepreg substrate. The surface electrode pattern 12 and the back electrode pattern 13 are thick copper patterns.

[0013] The semiconductor element 20 is mounted on the printed wiring board 10. The semiconductor element 20 is electrically connected to the back electrode pattern 13 of the printed wiring board 10. The semiconductor element 20 is electrically connected to the printed wiring board 10 via a copper post 60. The semiconductor element 20 is electrically connected to the back electrode pattern 13 of the printed wiring board 10 via the copper post 60 and a bonding material 80. The semiconductor element 20 is connected to the insulating substrate 90 via the bonding material 80. The front electrode pattern 12 and the back electrode pattern 13 are configured so that currents flow in opposite directions.

[0014] The RC snubber circuit 30 is mounted on the printed wiring board 10. The RC snubber circuit 30 includes a resistive element 31 and a capacitive element 32. The RC snubber circuit 30 is electrically connected to the surface electrode pattern 12 of the printed wiring board 10. The resistive element 31 is electrically connected to the surface electrode pattern 12 via a bonding material 80. The capacitive element 32 is electrically connected to the surface electrode pattern 12 via the bonding material 80.

[0015] The semiconductor element 20 is arranged so as to overlap the printed wiring board 10. The RC snubber circuit 30 is arranged so as to overlap the printed wiring board 10. The semiconductor element 20 and the RC snubber circuit 30 are arranged at different positions in the direction in which they overlap with the printed wiring board 10. The semiconductor element 20, the RC snubber circuit 30, and the printed wiring board 10 are stacked. The semiconductor element 20 and the RC snubber circuit 30 are arranged on a different layer from the printed wiring board 10.

[0016] The sealing resin 40 constitutes a housing. That is, the housing of the semiconductor device 1 is formed by the sealing resin 40. The sealing resin 40 seals the semiconductor element 20 and the RC snubber circuit 30. The sealing resin 40 seals the printed wiring board 10 and the insulating substrate 90. A portion of the printed wiring board 10 is exposed from the sealing resin 40. A portion of the insulating substrate 90 is exposed from the sealing resin 40. The sealing resin 40 is a transfer mold resin.

[0017] The control terminal 50 is electrically connected to the surface electrode pattern 12 of the printed wiring board 10. In the present embodiment, the control terminal 50 is electrically connected to the surface electrode pattern 12 of the printed wiring board 10 via a bonding material 80. The control terminal 50 is configured to input a control signal to the semiconductor element 20 and to output an output signal from the semiconductor element 20. The control terminal 50 is disposed on the upper surface of the semiconductor device 1. The control terminal 50 is connected to a portion of the surface electrode pattern 12 exposed from the sealing resin 40.

[0018] The copper post 60 is disposed between the rear electrode pattern 13 of the printed wiring board 10 and the semiconductor element 20. The copper post 60 is connected to the rear electrode pattern 13 of the printed wiring board 10 via a bonding material 80. The copper post 60 is connected to the semiconductor element 20 via the bonding material 80.

[0019] The surface electrode 70 is disposed on the surface of the semiconductor device 1. The surface electrode 70 is connected to the surface electrode pattern 12 of the printed wiring board 10. The surface electrode 70 is, for example, a copper block. The surface electrode 70 is disposed on the upper surface of the semiconductor device 1.

[0020] The bonding material 80 is used to bond the components together. The bonding material 80 has electrical conductivity. The bonding material 80 is, for example, solder.

[0021] The insulating substrate 90 includes a ceramic substrate 91, a front surface metal portion 92, and a back surface metal portion 93. The ceramic substrate 91 is formed of ceramic. The front surface metal portion 92 is disposed on the front surface of the ceramic substrate 91. The back surface metal portion 93 is disposed on the back surface of the ceramic substrate 91. The front surface metal portion 92 and the back surface metal portion 93 are each formed of metal. The insulating substrate 90 is larger than the printed wiring board 10 in the longitudinal direction of the semiconductor device 1.

[0022] Referring to FIG. 3 , the circuit of the semiconductor device 1 according to the first embodiment will be described. FIG. 3 is a circuit diagram of the semiconductor device 1 according to the first embodiment. Two sets of semiconductor elements 20 are connected in series between a P electrode pattern (P) and an N electrode pattern (N). An AC electrode pattern (AC) is connected between the two sets of semiconductor elements 20. In this embodiment, the semiconductor elements 20 are switching elements including an IGBT (insulated gate bipolar transistor) and a freewheeling diode. The IGBT has a gate (G), a collector (C), and an emitter (E). The control terminal 50 is connected to the gate electrode (G) and functions as a gate terminal. Note that the semiconductor elements 20 are not limited to IGBTs and may be MOSFETs (metal oxide semiconductor field effect transistors) or other semiconductor elements. The material of the semiconductor elements 20 may be Si (silicon), SiC (silicon carbide), or GaN (gallium nitride).

[0023] An RC snubber circuit 30 is connected between the P electrode pattern (P) and the N electrode pattern (N). The RC snubber circuit 30 is electrically connected in parallel with the semiconductor element 20. The RC snubber circuit 30 is configured to be able to suppress high-frequency noise that may be generated by the semiconductor element 20. The resistive element 31 and the capacitive element 32 are electrically connected in series. The resistive element 31 is an element for consuming the power of high-frequency noise output from the semiconductor device 1. The resistive element 31 is, for example, a metal sheet resistor. The capacitive element 32 is an element for absorbing the power of high-frequency noise output from the semiconductor device 1. The capacitive element 32 is, for example, a thin-film capacitor.

[0024] The effects of the semiconductor device 1 according to the first embodiment will be described in comparison with a comparative example of the semiconductor device 1.

[0025] Fig. 4 is a cross-sectional view schematically showing the configuration of a comparative example of the semiconductor device 1. Fig. 5 is a top perspective view schematically showing the configuration of a comparative example of the semiconductor device 1. For convenience of explanation, Fig. 4 illustrates the semiconductor element 20, the resistive element 31, the capacitive element 32, a bonding material, and an insulating substrate 90. For convenience of explanation, Fig. 5 illustrates the semiconductor element 20, the resistive element 31, the capacitive element 32, a P electrode pattern (P), an N electrode pattern (N), and an AC electrode pattern (AC).

[0026] In the comparative example of the semiconductor device 1, the semiconductor element 20 and the RC snubber circuit 30 are arranged on the same insulating substrate 90. Specifically, the semiconductor element 20, the resistive element 31, and the capacitive element 32 are each connected to the surface metal portion 92 via the bonding material 80. Therefore, compared to the case where only the semiconductor element 20 is arranged on the insulating substrate 90, the footprint is expanded by the amount of the RC snubber circuit 30.

[0027] The semiconductor device 1 according to the first embodiment includes an RC snubber circuit 30 electrically connected in parallel with the semiconductor element 20. Therefore, the snubber circuit 30 can reduce the inductance within the semiconductor device 1. Furthermore, the semiconductor element 20 and the RC snubber circuit 30 are arranged at different positions in the direction in which they overlap with the printed wiring board 10. Therefore, the footprint is smaller than when the semiconductor element 20 and the RC snubber circuit 30 are arranged on the same surface of the printed wiring board 10. Therefore, it is possible to prevent the footprint from expanding.

[0028] In the semiconductor device 1 according to the first embodiment, the sealing resin 40 forms a housing, which reduces damage to the resistive element 31 and the capacitive element 32 due to warping of the printed wiring board 10, and reduces stress on the bonding material 80.

[0029] In the semiconductor device 1 according to the first embodiment, the control terminal 50 and the surface electrode 70 are disposed on the top surface of the semiconductor device 1. This allows the wiring length to be shorter than when the control terminal 50 and the surface electrode 70 are disposed on the side surface of the semiconductor device 1. This allows the inductance to be reduced.

[0030] In the semiconductor device 1 according to the first embodiment, the magnetic flux generated by the wiring can be cancelled out by the magnetic flux of the eddy current due to the currents flowing in opposite directions through the front electrode pattern 12 and the back electrode pattern 13. This reduces the inductance.

[0031] In the semiconductor device 1 according to the first embodiment, the semiconductor element 20 is electrically connected to the back electrode pattern 13 of the printed wiring board 10, and the RC snubber circuit 30 is electrically connected to the front electrode pattern 12 of the printed wiring board 10. Therefore, by arranging the semiconductor element 20 on the back surface of the printed wiring board 10 and arranging the RC snubber circuit 30 on the front surface of the printed wiring board 10, it is possible to prevent the footprint from expanding.

[0032] According to the semiconductor device 1 of the first embodiment, the semiconductor element 20 is electrically connected to the printed wiring board 10 via the copper post 60. Therefore, the printed wiring board 10 and the semiconductor element 20 can be joined via the copper post 60.

[0033] Second Embodiment Unless otherwise specified, the semiconductor device 1 according to the second embodiment has the same configuration and functions and effects as the semiconductor device 1 according to the first embodiment.

[0034] The structure around the through-hole 14 of the semiconductor device 1 according to the second embodiment will be described with reference to Figures 6 and 7. Figure 6 is a cross-sectional view schematically showing a configuration in which the through-hole 14 of the semiconductor device 1 according to the second embodiment is filled with solder. Figure 7 is a cross-sectional view schematically showing a configuration in which the through-hole 14 of the semiconductor device 1 according to the second embodiment is filled with resin.

[0035] In the semiconductor device 1 according to the second embodiment, a through hole 14 is provided in a substrate 11 of a printed wiring board 10. A front surface electrode pattern 12 and a back surface electrode pattern 13 are electrically connected via the through hole 14. Solder 15 or resin 16 is embedded in the through hole 14. In other words, the inside of the through hole 14 is filled with solder 15 or resin 16.

[0036] According to the semiconductor device 1 of the second embodiment, the through holes 14 are filled with solder 15 or resin 16. This prevents the sealing resin 40 from entering the through holes 14. This prevents the sealing resin 40 from moving through the through holes 14 to the front electrode pattern 12 and the back electrode pattern 13. This allows the front electrode pattern 12 to be reliably exposed.

[0037] Third Embodiment Unless otherwise specified, the semiconductor device 1 according to the third embodiment has the same configuration and functions and effects as the semiconductor device 1 according to the first embodiment.

[0038] The configuration of the semiconductor device 1 according to the third embodiment will be described with reference to Figures 8 and 9. Figure 8 is a cross-sectional view schematically showing the configuration of the semiconductor device 1 according to the third embodiment. Figure 8 is a cross-sectional view taken along line VIII-VIII in Figure 9. Figure 9 is a top view schematically showing the configuration of the semiconductor device 1 according to the third embodiment.

[0039] In the semiconductor device 1 according to the third embodiment, the surface electrode 70 is disposed on a side surface of the semiconductor device 1. The surface electrode 70 is configured integrally with the surface electrode pattern 12 of the printed wiring board 10. The control terminal 50 is disposed at an end of the semiconductor device 1 in the short-side direction.

[0040] The semiconductor device 1 includes an insulating sheet 100 and a heat spreader 110. The insulating sheet 100 includes an insulating layer 101 and a copper foil 102. The insulating layer 101 is electrically connected to the semiconductor element 20. The insulating layer 101 is connected to the semiconductor element 20 via the heat spreader 110. The copper foil 102 covers the insulating layer 101. The copper foil 102 is arranged on the opposite side of the insulating layer 101 from the semiconductor element 20. The sealing resin 40 seals the insulating sheet 100 and the heat spreader 110. The copper foil 102 is exposed from the sealing resin 40. The insulating sheet 100 is smaller than the printed wiring board 10 in the longitudinal direction of the semiconductor device 1.

[0041] According to the semiconductor device 1 of the third embodiment, the insulating layer 101 of the insulating sheet 100 is electrically connected to the semiconductor element 20. Therefore, the insulating sheet 100 can ensure the insulating performance.

[0042] In the semiconductor device 1 according to the third embodiment, the surface electrode 70 is disposed on the side surface of the semiconductor device 1. This makes it possible to use a general structure of the surface electrode 70 while suppressing the expansion of the footprint due to the placement of the RC snubber circuit 30.

[0043] Fourth Embodiment Unless otherwise specified, the semiconductor device 1 according to the fourth embodiment has the same configuration and functions and effects as the semiconductor device 1 according to the first embodiment.

[0044] The configuration of the semiconductor device 1 according to the fourth embodiment will be described with reference to Fig. 10. Fig. 9 is a cross-sectional view schematically showing the configuration of the semiconductor device 1 according to the fourth embodiment.

[0045] The semiconductor device 1 according to the fourth embodiment includes an interlayer embedding resin 120. The interlayer embedding resin 120 is embedded in spaces on the substrate 11 of the printed wiring board 10 where the front surface electrode pattern 12 and the back surface electrode pattern 13 are not arranged.

[0046] According to the semiconductor device 1 of the fourth embodiment, the interlayer embedding resin 120 is embedded in the spaces on the substrate 11 of the printed wiring board 10 where the front electrode pattern 12 and the back electrode pattern 13 are not arranged. Therefore, the spaces on the substrate 11 where the front electrode pattern 12 and the back electrode pattern 13 are not arranged can be embedded with the interlayer embedding resin 120. Therefore, the steps caused by the front electrode pattern 12 and the back electrode pattern 13 can be embedded with the interlayer embedding resin 120.

[0047] Fifth Embodiment A power conversion device according to a fifth embodiment will be described. The power conversion device according to the fifth embodiment is designated as a power conversion device 300.

[0048] In the fifth embodiment, the semiconductor device according to the first to fourth embodiments is applied to a power conversion device. Although the present disclosure is not limited to a specific power conversion device, the fifth embodiment will be described with reference to a case where the present disclosure is applied to a three-phase inverter.

[0049] (Configuration of Power Conversion Device 300) The configuration of the power conversion device 300 will be described below.

[0050] 11 is a block diagram showing the configuration of a power conversion system to which the power conversion device 300 is applied. The power conversion system shown in FIG.

[0051] The power supply 410 is a DC power supply that supplies DC power to the power conversion device 300. The power supply 410 can be configured from various sources. For example, the power supply 410 can be configured from a DC system, a solar cell, or a storage battery. The power supply 410 may be configured from a rectifier circuit connected to an AC system or an AC / DC converter. The power supply 410 may be configured from a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0052] The load 420 is a three-phase electric motor driven by AC power supplied from the power conversion device 300. The load 420 is not limited to a specific application. The load 420 is an electric motor mounted on various electrical devices. The load 420 is used as an electric motor for, for example, a hybrid vehicle, an electric vehicle, a railroad car, an elevator, or an air conditioning device.

[0053] The power conversion device 300 is a three-phase inverter connected between a power supply 410 and a load 420. The power conversion device 300 converts DC power supplied from the power supply 410 into AC power and supplies the AC power to the load 420. As shown in Fig. 11 , the power conversion device 300 has a main conversion circuit 301 that converts DC power into AC power and outputs it, and a control circuit 303 that outputs a control signal 304 to the main conversion circuit 301 to control the main conversion circuit 301.

[0054] (Detailed Configuration of Power Conversion Device 300) The configuration of the power conversion device 300 will be described in detail below.

[0055] The main conversion circuit 301 includes a switching element and a free wheel diode (not shown). The main conversion circuit 301 converts DC power supplied from the power source 410 into AC power by switching the switching element, and supplies the AC power to the load 420.

[0056] There are various specific circuit configurations for the main conversion circuit 301, but the main conversion circuit 301 according to embodiment 5 is a two-level three-phase full-bridge circuit, and is composed of six switching elements and six freewheeling diodes connected in anti-parallel to each switching element.

[0057] At least one of the switching element and each free wheel diode of the main conversion circuit 301 is a switching element or free wheel diode included in a semiconductor device 302 corresponding to any one of the semiconductor devices of the first to fourth embodiments.

[0058] The six switching elements are connected in series in pairs to form upper and lower arms. Each upper and lower arm constitutes one phase (U phase, V phase, and W phase) of the half-bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 301, are connected to the load 420. Note that a freewheeling diode is not required for transistors that have a body diode, such as MOS transistors, or transistors that have a built-in diode and function as a freewheeling diode, such as RC-IGBTs. The switching elements themselves may be composed of multiple transistors.

[0059] The main conversion circuit 301 has a drive circuit (not shown) that drives each switching element. This drive circuit may be built into the semiconductor device 302, or may be configured separately from the semiconductor device 302. This drive circuit generates drive signals that drive the switching elements of the main conversion circuit 301, and supplies them to the control electrodes of the switching elements of the main conversion circuit 301.

[0060] More specifically, this drive circuit outputs to the control electrode of each switching element a drive signal that turns the switching element on and a drive signal that turns the switching element off in accordance with a control signal 304 from the control circuit 303. When maintaining a switching element in the on state, the drive signal is a voltage signal (on signal) that is equal to or higher than the threshold voltage of the switching element. When maintaining a switching element in the off state, the drive signal is a voltage signal (off signal) that is equal to or lower than the threshold voltage of the switching element.

[0061] The control circuit 303 controls the switching elements of the main conversion circuit 301 so that the desired power is supplied to the load 420. More specifically, it calculates the time (on time) that each switching element of the main conversion circuit 301 should be in the on state based on the power to be supplied to the load 420. For example, the main conversion circuit 301 can be controlled by PWM control, which modulates the on time of the switching elements according to the voltage to be output. The control circuit 303 outputs a control command (control signal 304) to the drive circuit of the main conversion circuit 301 so that on signals and off signals are output to the switching elements that should be in the on state and off state, respectively, at each point in time. The drive circuit of the main conversion circuit 301 outputs on or off signals as drive signals to the control electrodes of each switching element in accordance with the control signal 304.

[0062] (Effects of the power conversion device 300) According to the power conversion device 300, the semiconductor devices according to the first to fourth embodiments are applied as the semiconductor device 302 constituting the main conversion circuit 301, so that the inductance can be reduced and the expansion of the footprint can be suppressed.

[0063] In the fifth embodiment, an example in which the present disclosure is applied to a two-level three-phase inverter has been described, but the present disclosure is not limited to this and can be applied to various power conversion devices. In the present embodiment, a two-level power conversion device is described, but a three-level or multi-level power conversion device may also be used. In addition, when power is supplied to a single-phase load, the present disclosure may also be applied to a single-phase inverter. Furthermore, when power is supplied to a DC load or the like, the present disclosure may also be applied to a DC / DC converter or an AC / DC converter.

[0064] The above-described embodiments can be combined as appropriate. The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims.

[0065] 1 semiconductor device, 10 printed wiring board, 11 substrate, 11a surface, 11b back surface, 12 surface electrode pattern, 13 back surface electrode pattern, 14 through hole, 15 solder, 16 resin, 20 semiconductor element, 30 snubber circuit, 31 resistive element, 32 capacitive element, 40 sealing resin, 50 control terminal, 60 copper post, 70 surface electrode, 80 bonding material, 90 insulating substrate, 91 ceramic substrate, 92 surface metal portion, 93 back surface metal portion, 100 insulating sheet, 101 insulating layer, 102 copper foil, 110 heat spreader, 120 interlayer embedded resin, 300 power conversion device, 301 main conversion circuit, 302 semiconductor device, 303 control circuit, 304 control signal.

Claims

1. Printed circuit board and A semiconductor element mounted on the aforementioned printed circuit board, An RC snubber circuit mounted on the printed circuit board and electrically connected in parallel with the semiconductor element, The sealing resin that constitutes the housing, Equipped with control terminals, The RC snubber circuit includes a resistive element and a capacitive element, The resistive element and the capacitive element are electrically connected in series. The semiconductor element is arranged so as to overlap the printed circuit board. The RC snubber circuit is arranged so as to overlap the printed circuit board. The semiconductor element and the RC snubber circuit are arranged at different positions in the direction in which they overlap with the printed circuit board. The sealing resin seals the semiconductor element and the RC snubber circuit. The printed circuit board includes a substrate having a front surface and a back surface, and a surface electrode pattern disposed on the front surface of the substrate. A semiconductor device wherein the control terminal is connected to a portion of the surface electrode pattern exposed from the sealing resin and is located within the printed circuit board when viewed from above.

2. The printed circuit board includes a back electrode pattern arranged on the back surface of the board, The semiconductor element is electrically connected to the back electrode pattern of the printed circuit board. The semiconductor device according to claim 1, wherein the RC snubber circuit is electrically connected to the surface electrode pattern of the printed circuit board.

3. The aforementioned substrate is provided with through-holes, The surface electrode pattern and the back electrode pattern are electrically connected via the through-holes. The semiconductor device according to claim 2, wherein solder or resin is embedded in the through-hole.

4. Further equipped with interlayer embedding resin, The semiconductor device according to claim 2 or 3, wherein the interlayer embedding resin is embedded in the space on the substrate where neither the surface electrode pattern nor the back electrode pattern is arranged.

5. With an additional insulating sheet, The insulating sheet comprises an insulating layer and copper foil. The copper foil covers the insulating layer and is positioned on the opposite side of the insulating layer from the semiconductor element. The semiconductor device according to claim 1, wherein the insulating layer is electrically connected to the semiconductor element.

6. Equipped with copper posts, The semiconductor device according to claim 1, wherein the semiconductor element is electrically connected to the printed circuit board via the copper post.

7. A semiconductor device according to claim 1, comprising a main conversion circuit that converts and outputs input power, A power conversion device comprising a control circuit that outputs a control signal to the main conversion circuit to control the main conversion circuit.