Apparatus and Method for Processing Substrate

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method comprising: a first chamber in which a first processing process for a substrate is performed; a second chamber in which a second processing process for a substrate is performed; a first gas injection unit for injecting gas into the first chamber; a second gas injection unit for injecting gas into the second chamber; a gas supply unit for supplying gas; and a path changing unit for changing the direction of the gas so that the gas from the gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus that performs processing processes such as deposition and etching processes on a substrate. Background Technology

[0002] Generally, to manufacture solar cells, semiconductor devices, flat-panel displays, etc., it is necessary to form a predetermined thin film layer, thin film circuit pattern, or optical pattern on a substrate. To this end, substrate processing processes are performed, such as a deposition process for depositing a thin film of a specific material on the substrate, a photolithography process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film from the selectively exposed portions to form a pattern. These substrate processing processes are carried out by a substrate processing device.

[0003] A substrate processing device according to the prior art includes a chamber providing a processing space, a support member supporting a substrate, a gas injection member injecting gas, and a gas supply member supplying gas to the gas injection member. When the gas supply member supplies gas to the gas injection member, the gas injection member injects gas toward the support member. Accordingly, a processing process is performed on a substrate supported by the support member.

[0004] Here, in order to increase the throughput of the processing process for the substrate, the substrate processing device according to the prior art is implemented to have a plurality of chambers. In this case, the substrate processing device according to the prior art is equipped with a plurality of gas supply units to supply gas to gas injection units disposed in the chambers. Accordingly, the substrate processing device according to the prior art had a problem in that the construction cost for building the gas supply units and the management cost for managing the gas supply units increased. The problem to be solved

[0005] The present invention was devised to solve the problems described above and aims to provide a substrate processing device and a substrate processing method capable of reducing construction and management costs to increase the throughput of the substrate processing process. means of solving the problem

[0006] In order to solve the problem described above, the present invention may include the following configuration.

[0007] A substrate processing device according to the present invention comprises: a first chamber in which a first processing process is performed; a second chamber in which a second processing process for a substrate is performed; a first gas injection unit for injecting gas into the first chamber; a second gas injection unit for injecting gas into the second chamber; and a gas supply unit for supplying gas. The gas supply unit includes a path changing unit that changes the direction of the gas so that the gas of the gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively; the gas supply unit includes a first gas supply unit that supplies a first gas and a second gas supply unit that supplies a second gas; the path changing unit includes a first changing unit that changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively, and a second changing unit that changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively; and when the first gas supply unit supplies the first gas, the first changing unit supplies the first gas to the first gas injection unit and then changes the direction of the first gas to supply the first gas to the second gas injection unit, thereby in the first chamber In performing the first processing process and the second processing process in the second chamber, the first gas supply unit is used in common, and when the second gas supply unit supplies the second gas, the second changing unit supplies the second gas to the first gas injection unit and then changes the direction of the second gas to supply the second gas to the second gas injection unit, thereby allowing the second gas supply unit to be used in common when performing the first processing process in the first chamber and the second processing process in the second chamber.

[0008] A substrate processing method according to the present invention is a substrate processing method that performs a processing process on a substrate using a substrate processing apparatus having a first chamber where a first processing process on a substrate is performed and a second chamber where a second processing process on a substrate is performed, comprising the steps of: changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber; performing the first processing process using the gas supplied to the first chamber; and changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber. The method includes the step of performing the second treatment process using the gas supplied to the second chamber, wherein the gas supply unit includes a first gas supply unit that supplies a first gas and a second gas supply unit that supplies a second gas, and the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber is wherein a first changing unit changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first chamber, and a second changing unit changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the first chamber, and the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber is wherein the first changing unit changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the second chamber, and the second changing unit changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the second chamber, and the As the first gas is supplied to the first chamber and then changes direction to be supplied to the second chamber, and the second gas is supplied to the first chamber and then changes direction to be supplied to the second chamber, the first gas supply unit and the second gas supply unit can be used in common to perform the first treatment process in the first chamber and the second treatment process in the second chamber.

[0009] A substrate processing method according to the present invention can perform a processing process on a substrate using a substrate processing apparatus having a first chamber where a first processing process on the substrate is performed, a second chamber where a second processing process on the substrate is performed, a first gas supply unit for supplying a first gas, a second gas supply unit for supplying a second gas, and a third gas supply unit for supplying a third gas. A substrate processing method according to the present invention comprises the steps of: the first gas supply unit supplying the first gas to the first chamber; the first gas supply unit supplying the first gas to the second chamber and the third gas supply unit supplying the third gas to the first chamber; and the second gas supply unit supplying the second gas to the first chamber and the third gas supply unit supplying the third gas to the second chamber. The method may include the step of the second gas supply unit supplying the second gas to the second chamber and the third gas supply unit supplying the third gas to the first chamber; and the step of the third gas supply unit supplying the third gas to the second chamber. Effects of the invention

[0010] According to the present invention, the following effects can be achieved.

[0011] The present invention is implemented such that the gas supply unit is shared when performing a first treatment process in a first chamber and a second treatment process in a second chamber. Accordingly, the present invention can reduce the construction costs for building the gas supply unit and the management costs for managing the gas supply unit. Furthermore, since the present invention can reduce the area occupied by the gas supply unit within the installation space, it can contribute to improving the space utilization of the said installation space.

[0012] The present invention is implemented to easily and accurately control the flow rate of the gas supplied to each of the first chamber and the second chamber. In addition, the present invention is implemented such that each of the first gas injection unit and the second gas injection unit injects gas with a sufficient injection pressure. Accordingly, the present invention can improve the quality of substrates after the first and second processing steps are completed by utilizing gas injected with a sufficient flow rate and injection pressure. Brief explanation of the drawing

[0013] FIG. 1 is a schematic diagram of a substrate processing apparatus according to the present invention. FIG. 2 is a schematic block diagram showing a comparative example of a substrate processing apparatus according to the present invention. FIG. 3 is a schematic block diagram of a substrate processing apparatus according to the present invention. FIGS. 4 to 7 are schematic flowcharts of a substrate processing method according to the present invention. FIG. 8 is a schematic flowchart of a substrate processing method according to a modified embodiment of the present invention. Specific details for implementing the invention

[0014] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings.

[0015] Referring to FIG. 1, the substrate processing device (1) according to the present invention performs a processing process on a substrate. The substrate may be a glass substrate, a silicon substrate, a metal substrate, etc. The substrate processing device (1) according to the present invention may perform a deposition process for depositing a thin film on the substrate, an etching process for removing a portion of the thin film deposited on the substrate, etc. Hereinafter, the substrate processing device (1) according to the present invention is described based on an embodiment in which it performs the deposition process, but it will be obvious to those skilled in the art to whom the present invention belongs that the substrate processing device (1) according to the present invention performs other processing processes, such as the etching process, from this.

[0016] The substrate processing device (1) according to the present invention may include a first chamber (2), a second chamber (3), a gas supply unit (4), and a path changing unit (5).

[0017] Chamber 1

[0018] Referring to FIG. 1, the first chamber (2) provides a first processing space (20). In the first processing space (20), a first processing process, such as a deposition process or an etching process, can be performed on the substrate. The first processing space (20) can be placed inside the first chamber (2). An exhaust port (not shown) for exhausting gas from the first processing space (20) can be coupled to the first chamber (2).

[0019] A first gas injection unit (21) may be installed in the first chamber (2).

[0020] The first gas injection unit (21) sprays gas into the interior of the first chamber (2). The first gas injection unit (21) can be connected to the gas supply unit (4). Accordingly, the first gas injection unit (21) can spray gas supplied from the gas supply unit (4) into the interior of the first chamber (2).

[0021] A first support member (22) may be installed in the first chamber (2).

[0023] The first support member (22) supports the substrate. The first support member (22) may support a single substrate or multiple substrates. When multiple substrates are supported on the second support member (32), the first processing step for multiple substrates can be performed at once. The first support member (22) may be coupled to the first chamber (2) so as to be placed inside the first chamber (2).

[0024] The first support member (22) may be positioned opposite to the first gas injection member (21). Accordingly, the first gas injection member (21) may inject gas supplied from the gas supply member (4) toward the first support member (22). The first gas injection member (21) may be coupled to the first lead (2a). The first lead (2a) may be positioned inside the first chamber (2).

[0025] Chamber 2

[0026] Referring to FIG. 1, the second chamber (3) provides a second processing space (30). In the second processing space (30), a second processing process, such as a deposition process or an etching process, can be performed on the substrate. The second processing process and the first processing process may be the same process. The second processing process and the first processing process may be different processes. The second processing space (30) may be placed inside the second chamber (3). An exhaust port (not shown) for exhausting gas from the second processing space (30) may be connected to the second chamber (3).

[0027] A second gas injection unit (31) may be installed in the second chamber (3).

[0029] The second gas injection unit (31) above injects gas into the interior of the second chamber (3). The second gas injection unit (31) can be connected to the gas supply unit (4). Accordingly, the second gas injection unit (31) can inject gas supplied from the gas supply unit (4) into the interior of the second chamber (3).

[0030] A second support member (32) may be installed in the second chamber (3).

[0032] The second support member (32) supports the substrate. The first support member (22) may support a single substrate or multiple substrates. When multiple substrates are supported by the second support member (32), a second processing step for multiple substrates can be performed at once. The second support member (32) may be coupled to the first chamber (2) so as to be placed inside the first chamber (2).

[0033] The second support member (32) may be positioned opposite to the second gas injection member (31). Accordingly, the second gas injection member (31) may inject gas supplied from the gas supply member (4) toward the second support member (32). The second gas injection member (31) may be coupled to the second lead (3a). The second lead (3a) may be positioned inside the second chamber (3).

[0034] Gas Supply Department

[0035] Referring to FIG. 1, the gas supply unit (4) supplies gas. The gas is used in the first treatment process and the second treatment process. For example, the gas may be a process gas such as a source gas, a reaction gas, etc., or a purge gas for purging the process gas. After the gas supplied by the gas supply unit (4) is supplied to the path changing unit (5), it may be supplied to either the first gas injection unit (21) or the second gas injection unit (31) selected by the path changing unit (5). When gas is supplied to the first gas injection unit (21) by the path changing unit (5), the first treatment process can be performed as the first gas injection unit (21) injects gas toward the first support unit (22). When gas is supplied to the second gas injection unit (31) by the path changing unit (5), the second gas injection unit (31) sprays gas toward the second support unit (32), thereby allowing the second processing process to be performed.

[0036] In this way, the gas supply unit (4) can be used in common when performing the first processing process in the first chamber (2) and the second processing process in the second chamber (3) in the substrate processing device (1) according to the present invention. Accordingly, compared to a comparative example in which gas supply units are provided individually for each chamber, the substrate processing device (1) according to the present invention can reduce the construction cost for building the gas supply unit (4) and the management cost for managing the gas supply unit (4). In addition, compared to the comparative example, the substrate processing device (1) according to the present invention can reduce the area occupied by the gas supply unit (4) in the installation space, thereby contributing to improving the space utilization of the installation space.

[0037] When the gas supply unit (4) supplies two or more types of gas, the gas supply unit (4) may include a plurality of storage tanks for storing gas. The gas supply unit (4) may supply a selected gas according to a preset process sequence among the gases stored in the storage tanks. In this case, the gas supply unit (4) may include a plurality of valves for the selective supply of gas.

[0038] <Route Change Section>

[0039] Referring to FIGS. 1 and 2, the path changing unit (5) changes the direction of the gas supplied by the gas supply unit (4). As the path changing unit (5) changes the direction of the gas, the gas from the gas supply unit (4) can be supplied to the first gas injection unit (21) and the second gas injection unit (31), respectively. In this case, the gas from the gas supply unit (4) may be supplied alternately to the first gas injection unit (21) and the second gas injection unit (31) by the path changing unit (5). For example, the gas from the gas supply unit (4) can be alternately supplied to the first gas injection unit (21) and the second gas injection unit (31) in the order that the gas is supplied to the first gas injection unit (21), then the gas is supplied to the second gas injection unit (31), and then the gas is supplied to the first gas injection unit (21). Accordingly, the substrate processing device (1) according to the present invention can achieve the following effects.

[0040] First, in the case of a comparative example in which the gas supply unit (4) supplies gas to both the first gas injection unit (21) and the second gas injection unit (31) without the path changing unit (5) as shown in FIG. 2, the gas from the gas supply unit (4) is divided and supplied to the first gas injection unit (21) and the second gas injection unit (31). Accordingly, in the comparative example, it is difficult to accurately control the flow rate of the gas supplied to the first gas injection unit (21) and the flow rate of the gas supplied to the second gas injection unit (31), respectively.

[0041] In contrast, in the embodiment, the gas from the gas supply unit (4) is supplied to the first gas injection unit (21) and the second gas injection unit (31) respectively using the path changing unit (5), so the flow rate of the gas supplied to the first gas injection unit (21) and the flow rate of the gas supplied to the second gas injection unit (31) can be easily and accurately controlled.

[0042] Second, in the comparative example, the gas from the gas supply unit (4) is divided and supplied to the first chamber (2) through the first gas injection unit (21), and also supplied to the second chamber (3) through the second gas injection unit (31). Accordingly, the comparative example reduces the flow rate of the gas injected by the first gas injection unit (21) and the flow rate of the gas injected by the second gas injection unit (31), thereby reducing the injection pressure of the gas injected by the first gas injection unit (21) and the injection pressure of the gas injected by the second gas injection unit (31). Therefore, in the comparative example, the quality of the substrates after the first and second processing processes are completed may be degraded due to the gas injected at a low flow rate and injection pressure.

[0043] In contrast, the embodiment can be implemented such that the gas from the gas supply unit (4) is alternately supplied to the first chamber (2) and the second chamber (3) through the first gas injection unit (21) and the second gas injection unit (31) using the path changing unit (5), so that each of the first gas injection unit (21) and the second gas injection unit (31) can inject gas with a sufficient injection pressure. Accordingly, the embodiment can improve the quality of the substrates in which the first and second processing processes are completed by using the gas injected with a sufficient flow rate and injection pressure. The path changing unit (5) can be implemented using a three-way valve.

[0044] Control Unit

[0045] Referring to FIGS. 1 to 4, the substrate processing device (1) according to the present invention may include a control unit (6).

[0046] The above control unit (6) controls the path changing unit (5). By controlling the path changing unit (5), the above control unit (6) can change the direction of the gas supplied by the gas supply unit (4). The above control unit (6) can control the path changing unit (5) according to pre-set process information according to the process conditions of each of the first processing process and the second processing process. The above process information can be pre-set by an operator, such as the flow rate of gas to be supplied to the first gas injection unit to perform the first processing process, the flow rate of gas to be supplied to the second gas injection unit to perform the second processing process, and the time for supplying gas to each of the first gas injection unit and the second gas injection unit.

[0047] Here, the substrate processing device (1) according to the present invention may be implemented to supply a mixed gas, in which a first gas and a second gas are mixed, to the first chamber (2) and the second chamber (3), respectively. In this case, the gas supply unit (4) may supply the mixed gas. The path changing unit (5) may change the direction of the mixed gas so that the mixed gas is supplied to the first chamber (2) and the second chamber (3), respectively. The first gas may be a source gas, and the second gas may be a reaction gas. In this case, a processing process by Chemical Vapor Deposition (CVD) may be performed in the first chamber (2) and the second chamber (3), respectively. After supplying the mixed gas to the first chamber (2) and the second chamber (3), the substrate processing device (1) according to the present invention may supply a purge gas to the first chamber (2) and the second chamber (3), respectively. Accordingly, the process of injecting the purge gas after the mixed gas is injected into each of the first chamber (2) and the second chamber (3) can be repeated.

[0048] Referring to FIG. 3, the substrate processing device (1) according to the present invention may be implemented such that the first gas and the second gas are supplied to the first chamber (2) and the second chamber (3), respectively, without being mixed. In this case, the gas supply unit (4) and the path changing unit (5) may be implemented as follows.

[0049] The above gas supply unit (4) may include a first gas supply unit (4a) and a second gas supply unit (4b). The first gas supply unit (4a) may supply the first gas. The second gas supply unit (4b) may supply the second gas. The first gas may be a source gas, and the second gas may be a reaction gas.

[0050] The above path change unit (5) may include a first change unit (5a) and a second change unit (5b).

[0051] The first changing unit (5a) can change the direction of the first gas so that the first gas of the first gas supply unit (4a) is supplied to the first chamber (2) and the second chamber (3), respectively. The first changing unit (5a) can be connected to the first gas supply unit (4a), the first chamber (2), and the second chamber (3), respectively. The first changing unit (5a) can be implemented using a three-way valve. Since the first changing unit (5a) is implemented approximately in accordance with the path changing unit (5) described above, a detailed description thereof is omitted.

[0052] The second changing unit (5b) can change the direction of the second gas so that the second gas of the second gas supply unit (4b) is supplied to the first chamber (2) and the second chamber (3), respectively. The second changing unit (5b) can be connected to the second gas supply unit (4b), the first chamber (2), and the second chamber (3), respectively. The second changing unit (5b) and the first changing unit (5a) can be connected to the first chamber (2) and the second chamber (3), respectively, independently of each other. The second changing unit (5b) can be implemented using a three-way valve. Since the second changing unit (5b) is implemented approximately in accordance with the path changing unit (5) described above, a detailed description thereof is omitted.

[0053] When a chemical vapor deposition (CVD) treatment process is performed in each of the first chamber (2) and the second chamber (3), the first changing unit (5a) and the second changing unit (5b) can change the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the first chamber (2). Accordingly, a first treatment process by chemical vapor deposition (CVD) can be performed in the first chamber (2) using the first gas and the second gas. Furthermore, the first changing unit (5a) and the second changing unit (5b) can change the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the second chamber (3). Accordingly, in the second chamber (3), a second treatment process by chemical vapor deposition (CVD) can be performed using the first gas and the second gas.

[0054] The above gas supply unit (4) may include a third gas supply unit (4c). The third gas supply unit (4c) supplies purge gas.

[0055] When the first processing step in the first chamber (2) and the second processing step in the second chamber (3) are completed, the third gas supply unit (4c) can supply the purge gas to each of the first chamber (2) and the second chamber (3). The third gas supply unit (4c) may also supply the purge gas to each of the first chamber (2) and the second chamber (3) through at least one of the first change unit (5a) and the second change unit (5b).

[0056] When the third gas supply unit (4c) supplies the purge gas to the first chamber (2) and the second chamber (3) respectively through the first changing unit (5a), the first changing unit (5a) can change the direction of the purge gas so that the purge gas is supplied to the first chamber (2) and the second chamber (3) respectively. In this case, the first changing unit (5a) is implemented to change the direction of the first gas and the direction of the purge gas.

[0057] When the third gas supply unit (4c) supplies purge gas to the first chamber (2) and the second chamber (3) respectively through the second changing unit (5b), the second changing unit (5b) can change the direction of the purge gas so that the purge gas is supplied to the first chamber (2) and the second chamber (3) respectively. In this case, the second changing unit (5b) is implemented to change the direction of the second gas and the direction of the purge gas.

[0058] When the third gas supply unit (4c) supplies purge gas to the first chamber (2) and the second chamber (3) respectively through both the first change unit (5a) and the second change unit (5b), the first change unit (5a) and the second change unit (5b) can change the direction of the purge gas so that the purge gas is supplied to the first chamber (2) and the second chamber (3) respectively.

[0059] The above path change unit (5) may include a third change unit (5c).

[0060] The third changing unit (5c) can change the direction of the purge gas so that the purge gas from the third gas supply unit (4c) is supplied to the first chamber (2) and the second chamber (3), respectively. When the first processing step in the first chamber (2) is completed, the third changing unit (5c) can change the direction of the purge gas so that the purge gas is supplied to the first chamber (2). While the purge gas is supplied to the first chamber (2), the second processing step can be performed in the second chamber (3). When the second processing step in the second chamber (3) is completed, the third changing unit (5c) can change the direction of the purge gas so that the purge gas is supplied to the second chamber (3). While the purge gas is supplied to the second chamber (3), the first processing step can be performed in the first chamber (2). The above third change unit (5c) can be implemented using a three-way valve. Since the above third change unit (5c) is implemented in approximately the same manner as the path change unit (5) described above, a detailed description thereof is omitted.

[0061] When a processing process by atomic layer deposition (ALD) is performed in each of the first chamber (2) and the second chamber (3), the first changing unit (5a) may change the direction of the first gas and supply the first gas to the first chamber (2), while the second changing unit (5b) may change the direction of the second gas and supply the second gas to the second chamber (3). And, while the first changing unit (5a) may change the direction of the first gas and supply the first gas to the second chamber (3), the second changing unit (5b) may change the direction of the second gas and supply the second gas to the first chamber (2).

[0062] When a processing process by atomic layer deposition (ALD) is performed in each of the first chamber (2) and the second chamber (3) and the purge gas is supplied to each of the first chamber (2) and the second chamber (3), the first change unit (5a), the second change unit (5b), and the third change unit (5c) can operate as follows.

[0063] First, while the first changing unit (5a) changes the direction of the first gas and supplies the first gas to the first chamber (2), the second changing unit (5b) can change the direction of the second gas and supply the second gas to the second chamber (3).

[0064] Next, at least one of the first changing unit (5a), the second changing unit (5b), and the third changing unit (5c) can change the direction of the purge gas and supply the purge gas to the first chamber (2) and the second chamber (3), respectively.

[0065] Next, while the first changing unit (5a) changes the direction of the first gas and supplies the first gas to the second chamber (3), the second changing unit (5b) can change the direction of the second gas and supply the second gas to the first chamber (2).

[0066] Next, at least one of the first changing unit (5a), the second changing unit (5b), and the third changing unit (5c) can change the direction of the purge gas and supply the purge gas to the first chamber (2) and the second chamber (3), respectively.

[0067] Accordingly, a first treatment process by atomic layer deposition (ALD) can be performed in the first chamber (2), and a second treatment process by atomic layer deposition (ALD) can be performed in the second chamber (3).

[0068] Hereinafter, an embodiment of the substrate processing method according to the present invention will be described in detail with reference to the attached drawings.

[0069] Referring to FIGS. 1 to 4, the substrate processing method according to the present invention performs a processing process on a substrate using a substrate processing device (1) having a first chamber (2) where a first processing process on the substrate is performed and a second chamber (3) where a second processing process on the substrate is performed. The substrate processing method according to the present invention can be performed through the substrate processing device (1) according to the present invention described above. The substrate processing method according to the present invention may include the following steps.

[0070] First, the direction of the gas is changed so that the gas is supplied to the first chamber (2) (S10). In this step (S10), the gas can be supplied to the first chamber (2) by the path changing unit (5) changing the direction of the gas so that the gas from the gas supply unit (4) is supplied to the first chamber (2). The path changing unit (5) can change the direction of the gas according to the control of the control unit (6).

[0071] Next, a first processing step is performed in the first chamber (2) (S20). This step (S20) can be achieved by the first gas injection unit (21) injecting gas supplied from the gas supply unit (4) and the path changing unit (5) toward a substrate supported by the first support unit (22).

[0072] Next, the direction of the gas is changed so that the gas is supplied to the second chamber (3) (S30). This step (S30) can be achieved by the path changing unit (5) changing the direction of the gas so that the gas from the gas supply unit (4) is supplied to the second chamber (3). The path changing unit (5) can supply the gas to the second chamber (3) by changing the direction of the gas according to the control of the control unit (6).

[0073] Next, a second processing step is performed in the second chamber (3) (S40). This step (S40) can be achieved by the second gas injection unit (31) injecting gas supplied from the gas supply unit (4) and the path changing unit (5) toward a substrate supported by the second support unit (32).

[0074] By repeatedly performing the steps described above, the substrate processing method according to the present invention can be implemented such that the first processing process is performed in the first chamber (2) and the second processing process is performed in the second chamber (3).

[0075] Here, the step of changing the direction of the gas so that the gas is supplied to the first chamber (S10) and the step of changing the direction of the gas so that the gas is supplied to the second chamber (S30) can be performed alternately. Accordingly, the operation of supplying gas from the gas supply unit (4) to the first chamber (2) and the operation of supplying gas from the gas supply unit (4) to the second chamber (3) can be performed alternately. Accordingly, the substrate processing method according to the present invention can easily and accurately control the flow rate of the gas supplied to the first chamber (2) and the flow rate of the gas supplied to the second chamber (3), respectively. In addition, since the substrate processing method according to the present invention is implemented to spray gas into the first chamber (2) and the second chamber (3) with sufficient spray pressure, the quality of the substrates in which the first processing process and the second processing process are completed can be improved by using the gas sprayed with sufficient flow rate and spray pressure.

[0076] Here, the step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber can be achieved by supplying the gas to the first chamber (2) while blocking the gas supply to the second chamber (3). Accordingly, the substrate processing method according to the present invention can increase the flow rate and injection pressure of the gas injected by the first gas injection unit (21) based on the amount of gas supplied by the gas supply unit (4), thereby further improving the quality of the substrates in which the first processing process is completed. The step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber can be achieved by supplying all of the gas to the first chamber (2).

[0077] Here, the step (S30) of changing the direction of the gas so that the gas is supplied to the second chamber can be achieved by supplying the gas to the second chamber (3) while blocking the gas supply to the first chamber (2). Accordingly, the substrate processing method according to the present invention can increase the flow rate and injection pressure of the gas injected by the second gas injection unit (31) based on the amount of gas supplied by the gas supply unit (4), thereby further improving the quality of the substrates after the second processing process is completed. The step (S30) of changing the direction of the gas so that the gas is supplied to the second chamber can be achieved by supplying all of the gas to the second chamber (3).

[0078] Here, the substrate processing method according to the present invention may be implemented to supply a mixed gas, in which a first gas and a second gas are mixed, to the first chamber (2) and the second chamber (3), respectively. In this case, the step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber may be achieved by changing the direction of the mixed gas so that the mixed gas is supplied to the first chamber (2). Accordingly, the step (S20) of performing a first processing process in the first chamber may be achieved by performing a first processing process by chemical vapor deposition using the mixed gas sprayed into the first chamber (2). The step (S30) of changing the direction of the gas so that the gas is supplied to the second chamber may be achieved by changing the direction of the mixed gas so that the mixed gas is supplied to the second chamber (3). Accordingly, the step (S40) of performing a second treatment process in the second chamber can be achieved by performing a second treatment process by chemical vapor deposition using a mixed gas injected into the second chamber (3).

[0079] Referring to FIGS. 1 to 5, the substrate processing method according to the present invention can be implemented such that the first gas and the second gas are supplied to the first chamber (2) and the second chamber (3), respectively, in a state where they are not mixed, thereby enabling a processing process by chemical vapor deposition (CVD). In this case, the substrate processing method according to the present invention can be implemented as follows.

[0080] First, the step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber can be achieved by changing the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the first chamber (2). This can be achieved by the first changing unit (5a) changing the direction of the first gas so that the first gas is supplied to the first chamber (2), and the second changing unit (5b) changing the direction of the second gas so that the second gas is supplied to the first chamber (2). Accordingly, the step (S20) of performing a first treatment process in the first chamber can be achieved by performing a first treatment process by chemical vapor deposition (CVD) using the first gas and the second gas in the first chamber (2).

[0081] Next, the step (S30) of changing the direction of the gas so that the gas is supplied to the second chamber can be achieved by changing the direction of the first gas and the direction of the second gas so that the first gas and the second gas are supplied to the second chamber (3). This can be achieved by the first changing unit (5a) changing the direction of the first gas so that the first gas is supplied to the second chamber (3), and the second changing unit (5b) changing the direction of the second gas so that the second gas is supplied to the second chamber (3). Accordingly, the step (S40) of performing a second treatment process in the second chamber can be achieved by performing a second treatment process by chemical vapor deposition (CVD) using the first gas and the second gas in the second chamber (3).

[0082] Here, the substrate processing method according to the present invention may include the step of supplying purge gas to a first chamber (S50) and the step of supplying purge gas to a second chamber (S60).

[0083] The step of supplying the purge gas to the first chamber (S50) may be performed after the step of performing the first treatment process in the first chamber (S20) has been completed. The step of supplying the purge gas to the first chamber (S50) may be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the first chamber (2). The step of supplying the purge gas to the first chamber (S50) may also be performed while the step of changing the direction of the gas so that the gas is supplied to the second chamber (S30) and the step of performing the second treatment process in the second chamber (S40) are being performed.

[0084] The step of supplying the purge gas to the second chamber (S60) may be performed after the step of performing the second treatment process in the second chamber (S40) has been completed. The step of supplying the purge gas to the second chamber (S60) may be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the second chamber (3). The step of supplying the purge gas to the second chamber (S60) may also be performed while the step of changing the direction of the gas so that the gas is supplied to the first chamber (S10) and the step of performing the first treatment process in the first chamber (S20) are being performed.

[0085] Referring to FIGS. 1 to 6, the substrate processing method according to the present invention may be implemented such that the first gas and the second gas are supplied to the first chamber (2) and the second chamber (3), respectively, without being mixed, thereby enabling a processing process by atomic layer deposition (ALD). For example, the substrate processing method according to the present invention may be implemented such that the first gas is supplied alternately to the first chamber (2) and the second chamber (3), and the second gas is supplied alternately to the first chamber (2) and the second chamber (3). The substrate processing method according to the present invention may be implemented as follows.

[0086] First, the step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber may include the step (S11) of changing the direction of the first gas so that the first gas is supplied to the first chamber.

[0087] The step (S11) of changing the direction of the first gas so that the first gas is supplied to the first chamber can be achieved by the first changing unit (5a) changing the direction of the first gas so that the first gas is supplied to the first chamber (2). Accordingly, a first processing process using the first gas can be performed in the first chamber (2) (S21). If the first gas is a source gas, an adsorption process for adsorbing the source gas onto a substrate can be performed in the first chamber (2) during the first processing process.

[0088] Next, the step of changing the direction of the gas so that the gas is supplied to the second chamber (S30) may include the step of changing the direction of the first gas so that the first gas is supplied to the second chamber (S31), and the step of changing the direction of the second gas so that the second gas is supplied to the first chamber (S32).

[0089] The step (S31) of changing the direction of the first gas so that the first gas is supplied to the second chamber can be achieved by the first changing unit (5a) changing the direction of the first gas so that the first gas is supplied to the second chamber (3). Accordingly, a second processing process using the first gas can be performed in the second chamber (3) (S41). If the first gas is a source gas, an adsorption process for adsorbing the source gas onto a substrate can be performed in the second chamber (3) during the second processing process.

[0090] The step (S32) of changing the direction of the second gas so that the second gas is supplied to the first chamber can be achieved by the second changing unit (5b) changing the direction of the second gas so that the second gas is supplied to the first chamber (2). Accordingly, a first treatment process using the second gas can be performed in the first chamber (2) (S42). If the second gas is a reaction gas, a deposition process can be performed in the first chamber (2) during the first treatment process in which a thin film is deposited by the reaction gas reacting with the source gas adsorbed on the substrate.

[0091] The step of changing the direction of the second gas so that the second gas is supplied to the first chamber (S32) and the step of changing the direction of the first gas so that the first gas is supplied to the second chamber (S31) may be performed simultaneously. Here, "simultaneously" means not only when the start time and the end time are exactly the same, but also when the start time and the end time differ within a predetermined range.

[0092] Here, the step (S10) of changing the direction of the gas so that the gas is supplied to the first chamber may include the step (S12) of changing the direction of the second gas so that the second gas is supplied to the second chamber.

[0093] The step (S12) of changing the direction of the second gas so that the second gas is supplied to the second chamber can be achieved by the second changing unit (5b) changing the direction of the second gas so that the second gas is supplied to the second chamber (3). Accordingly, a second treatment process using the second gas can be performed in the second chamber (3) (S22). If the second gas is a reaction gas, a deposition process can be performed in the second chamber (3) during the second treatment process in which a thin film is deposited by the reaction gas reacting with the source gas adsorbed on the substrate.

[0094] The step of changing the direction of the second gas so that the second gas is supplied to the second chamber (S12) and the step of changing the direction of the first gas so that the first gas is supplied to the first chamber (S11) may be performed simultaneously. Here, "simultaneously" means not only when the start time and the end time are exactly the same, but also when the start time and the end time differ within a predetermined range.

[0095] Meanwhile, at the beginning of the process in which a substrate is loaded into each of the first chamber (2) and the second chamber (3), only the step (S11) of changing the direction of the first gas so that the first gas is supplied to the first chamber may be performed, and the step (S12) of changing the direction of the second gas so that the second gas is supplied to the second chamber may not be performed. This is so that the processing process for the substrate is performed first with the first gas, and then the processing process for the substrate is performed with the second gas.

[0096] Here, the step of supplying the purge gas to the first chamber (S50) and the step of supplying the purge gas to the second chamber (S60) can be implemented as follows.

[0097] The step of supplying the purge gas to the first chamber (S50) may be performed after the step of performing the first treatment process using the first gas in the first chamber (S21) and the step of performing the second treatment process using the second gas in the second chamber (S22) have been performed. The step of supplying the purge gas to the first chamber (S50) may include the step of changing the direction of the purge gas so that the purge gas is supplied to the first chamber (S51), and the step of changing the direction of the purge gas so that the purge gas is supplied to the second chamber (S52).

[0098] The step (S51) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber can be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the first chamber (2).

[0099] The step (S52) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber can be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the second chamber (3).

[0100] The step (S52) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber may be performed after the step (S51) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber has been performed. Accordingly, the step (S50) of supplying the purge gas to the first chamber may be performed by changing the direction of the purge gas so that the purge gas is supplied alternately to the first chamber (2) and the second chamber (3). Meanwhile, the step (S51) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber may be performed after the step (S52) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber has been performed. The step (S52) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber and the step (S51) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber may be performed simultaneously.

[0101] The step of supplying the purge gas to the second chamber (S60) may be performed after the step of changing the direction of the first gas so that the first gas is supplied to the second chamber (S31) and the step of changing the direction of the second gas so that the second gas is supplied to the first chamber (S32) have been performed. The step of supplying the purge gas to the second chamber (S60) may include the step of changing the direction of the purge gas so that the purge gas is supplied to the first chamber (S61), and the step of changing the direction of the purge gas so that the purge gas is supplied to the second chamber (S62).

[0102] The step (S61) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber can be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the first chamber (2).

[0103] The step (S62) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber can be achieved by the third changing unit (5c) changing the direction of the purge gas so that the purge gas of the third gas supply unit (4c) is supplied to the second chamber (3).

[0104] The step (S62) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber may be performed after the step (S61) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber has been performed. Accordingly, the step (S60) of supplying the purge gas to the second chamber may be performed by changing the direction of the purge gas so that the purge gas is supplied alternately to the first chamber (2) and the second chamber (3). Meanwhile, the step (S61) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber may be performed after the step (S62) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber has been performed. The step (S62) of changing the direction of the purge gas so that the purge gas is supplied to the second chamber and the step (S61) of changing the direction of the purge gas so that the purge gas is supplied to the first chamber may be performed simultaneously.

[0105] Referring to FIGS. 1, FIGS. 3, and FIGS. 8, a substrate processing method according to a modified embodiment of the present invention performs a processing process on a substrate. The substrate processing method according to a modified embodiment of the present invention can be performed through the substrate processing device (1) according to the present invention described above. The substrate processing method according to a modified embodiment of the present invention may include the following steps.

[0106] First, the first gas is supplied to the first chamber (2) (S100). This step (S100) can be achieved by supplying the first gas from the first gas supply unit (4a) to the first chamber (2). In this case, the first changing unit (5a) can change the direction of the first gas so that the first gas from the first gas supply unit (4a) is supplied to the first chamber (2). The first gas may be a source gas. Accordingly, an adsorption process using the source gas can be performed in the first chamber (2).

[0107] Next, the first gas is supplied to the second chamber (3), and the third gas is supplied to the first chamber (2) (S200). This step (S200) can be achieved by the first gas supply unit (4a) supplying the first gas to the second chamber (3) and the third gas supply unit (4c) supplying the third gas to the first chamber (2). In this case, the first changing unit (5a) can change the direction of the second gas so that the first gas of the first gas supply unit (4a) is supplied to the second chamber (3). The third changing unit (5c) can change the direction of the third gas so that the third gas of the third gas supply unit (4c) is supplied to the first chamber (2). The third gas may be a purge gas. Accordingly, an adsorption process using the source gas can be performed in the second chamber (3), and a purging process for purging the first gas can be performed in the first chamber (2).

[0108] Next, the second gas is supplied to the first chamber (2), and the third gas is supplied to the second chamber (3) (S300). This step (S300) can be achieved by the second gas supply unit (4b) supplying the second gas to the first chamber (2) and the third gas supply unit (4c) supplying the third gas to the second chamber (3). In this case, the second changing unit (5b) can change the direction of the second gas so that the second gas from the second gas supply unit (4b) is supplied to the first chamber (2). The third changing unit (5c) can change the direction of the third gas so that the third gas from the third gas supply unit (4c) is supplied to the second chamber (3). The second gas may be a reaction gas. Accordingly, a deposition process using the reaction gas can be performed in the first chamber (2), and a purging process for purging the first gas can be performed in the second chamber (3).

[0109] Next, the second gas is supplied to the second chamber (3), and the third gas is supplied to the first chamber (2) (S400). This step (S400) can be achieved by the second gas supply unit (4b) supplying the second gas to the second chamber (3) and the third gas supply unit (4c) supplying the third gas to the first chamber (2). In this case, the second changing unit (5b) can change the direction of the second gas so that the second gas of the second gas supply unit (4b) is supplied to the second chamber (3). The third changing unit (5c) can change the direction of the third gas so that the third gas of the third gas supply unit (4c) is supplied to the first chamber (2). Accordingly, a deposition process using the reaction gas can be performed in the second chamber (3), and a purging process for purging the second gas can be performed in the first chamber (2).

[0110] Next, the third gas is supplied to the second chamber (3) (S500). This step (S500) can be achieved by the third gas supply unit (4c) supplying the third gas to the second chamber (3). In this case, the third changing unit (5c) can change the direction of the third gas so that the third gas from the third gas supply unit (4c) is supplied to the second chamber (3). Accordingly, a purging process for purging the second gas can be performed in the second chamber (3).

[0111] Meanwhile, at the beginning of the process, immediately after a substrate is loaded into each of the first chamber (2) and the second chamber (3), only the step (S100) of supplying the first gas to the first chamber may be performed, and no gas may be supplied to the second chamber (3). Furthermore, at the end of the process, immediately before a substrate is unloaded from each of the first chamber (2) and the second chamber (3), only the step (S500) of supplying the third gas to the second chamber may be performed, and no gas may be supplied to the first chamber (2). Additionally, at the middle of the process between the beginning of the process and the end of the process, the step (S100) of supplying the first gas to the first chamber may be performed while the step (S500) of supplying the third gas to the second chamber is being performed. In this case, a cycle in which the first gas, the third gas, the second gas, and the third gas are sequentially injected into the substrates located in each of the first chamber (2) and the second chamber (3) can be repeatedly performed.

[0112] It will be obvious to those skilled in the art that the invention described above is not limited to the aforementioned embodiments and attached drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical concept of the invention. Explanation of the symbols

[0113] 1 : Substrate processing device 2 : First Chamber 2a: 1st lead 20 : 1st processing space 21: 1st gas injection unit 22 : 1st Support Section 3: Second Chamber 3a : 2nd lead 30 : Second processing space 31 : 2nd gas injection unit 32 : 2nd Support Section 4: Gas supply unit 5 : Route change section 6 : Control unit

Claims

Claim 1 A first chamber in which a first processing step for a substrate is performed; a second chamber in which a second processing step for a substrate is performed; a first gas injection unit for injecting gas into the first chamber; a second gas injection unit for injecting gas into the second chamber; and a gas supply unit for supplying gas. The gas supply unit includes a path changing unit that changes the direction of the gas so that the gas of the gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively; the gas supply unit includes a first gas supply unit that supplies a first gas and a second gas supply unit that supplies a second gas; the path changing unit includes a first changing unit that changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively, and a second changing unit that changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively; the first changing unit and the second changing unit are each implemented using a three-way valve and are independently connected to the first chamber and the second chamber, respectively; and when the first gas supply unit supplies the first gas, the first changing unit is the A substrate processing apparatus characterized by supplying a first gas to the first gas injection unit and then changing the direction of the first gas to supply the first gas to the second gas injection unit, thereby performing the first processing process in the first chamber and the second processing process in the second chamber, wherein the first gas supply unit is used in common when the second gas supply unit supplies the second gas, and when the second gas supply unit supplies the second gas, the second changing unit supplies the second gas to the first gas injection unit and then changes the direction of the second gas to supply the second gas to the second gas injection unit, thereby performing the first processing process in the first chamber and the second processing process in the second chamber, wherein the second gas supply unit is used in common. Claim 2 A substrate processing apparatus according to claim 1, wherein the gas supply unit includes a third gas supply unit that supplies purge gas, and the path changing unit includes a third changing unit that changes the direction of the purge gas so that the purge gas of the third gas supply unit is supplied to the first gas injection unit and the second gas injection unit, respectively. Claim 3 A substrate processing apparatus according to claim 1, wherein the gas supply unit includes a third gas supply unit that supplies purge gas, the first changing unit changes the direction of the first gas and the direction of the purge gas, and the second changing unit changes the direction of the second gas and the direction of the purge gas. Claim 4 A substrate processing method for performing a processing process on a substrate using a substrate processing device having a first chamber for performing a first processing process on a substrate and a second chamber for performing a second processing process on a substrate, comprising: a step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber; a step of performing the first processing process using the gas supplied to the first chamber; and a step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber. The method includes the step of performing the second treatment process using the gas supplied to the second chamber, wherein the gas supply unit includes a first gas supply unit that supplies a first gas and a second gas supply unit that supplies a second gas, and the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber is wherein a first changing unit changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the first chamber, and a second changing unit changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the first chamber, and the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber is wherein the first changing unit changes the direction of the first gas so that the first gas of the first gas supply unit is supplied to the second chamber, and the second changing unit changes the direction of the second gas so that the second gas of the second gas supply unit is supplied to the second chamber, and wherein the A substrate processing method characterized in that the first change unit and the second change unit are each implemented using a three-way valve and are independently connected to the first chamber and the second chamber, respectively, and the first gas is supplied to the first chamber and then changes direction to be supplied to the second chamber, and the second gas is supplied to the first chamber and then changes direction to be supplied to the second chamber, so that the first gas supply unit and the second gas supply unit are used in common when performing the first processing process in the first chamber and the second processing process in the second chamber. Claim 5 A substrate processing method according to claim 4, characterized in that the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber and the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the second chamber are performed alternately. Claim 6 In claim 4, the step of changing the direction of the gas so that the gas of the gas supply unit is supplied to the first chamber is characterized by supplying the gas to the first chamber while blocking the gas supply to the second chamber. Claim 7 A substrate processing method according to claim 4, characterized by including: a step of supplying a purge gas to the first chamber after the step of performing the first processing process is performed; and a step of supplying the purge gas to the second chamber after the step of performing the second processing process is performed.

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