Electroplating method and electroplating device

Abstract

As an electroplating method and an electroplating apparatus, the invention relates to the field of semiconductor processing technology, wherein the electroplating method comprises: S10, a step of applying a constant voltage to a central anode and not operating an edge electrode; S20, a step of obtaining a deposition rate of a plating layer in a central region as v1 and obtaining a deposition rate of a plating layer in an edge region as v2; S30, a step of determining the magnitudes of v1 and v2; S40, a step of, if v1 > v2, applying a constant voltage to an edge electrode and outputting a current I; S50, v1 <v2이면, 에지 전극에 부전압을 인가하고, 전류 I를 출력하는 단계; 및 S60, v1=v2이면, 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계를 포함한다. 중앙부 영역과 에지 영역의 도금층의 증착 속도를 각각 획득하고, 이에 따라 에지 전극의 전압과 전류를 제어함으로써, 에지 영역의 증착 속도를 동적으로 조절할 수 있고, 나아가 에지 영역과 중앙부 영역의 증착 속도를 실시간으로 균형을 맞출 수 있어, 전기도금의 균일성을 향상시킨다.

Description

Technology Field

[0001] The present invention relates to the field of semiconductor processing technology, and more specifically, to an electroplating method and an electroplating apparatus. Background Technology

[0002] In the field of electroplating, a seed layer is a relatively thin metal layer formed on the surface of a substrate through chemical or physical methods. The seed layer is an indispensable step in the electroplating process and plays a role in inducing and promoting metal deposition. To improve the area of ​​the effective electroplating region, the electrical contact locations between the conventional electroplating apparatus and the substrate seed layer are all located in the edge regions of the substrate, and there is no direct contact in the center region of the substrate.

[0003] As the electrical resistivity of the seed layer material increases and its thickness decreases, the electrical resistance also increases, and the difference in current density distribution becomes larger. Since the electrical contact location is in the edge region of the substrate, the current density in the edge region is much higher than that in the central region of the substrate. This non-uniform distribution of current density causes the edge plating layer of the substrate to become thicker and the center thinner, resulting in severe non-uniformity.

[0004] In response to this situation, the current solution involves adopting an electroplating device equipped with multiple anodes, controlling each anode independently, and controlling the power of each anode during the electroplating process through a preset program based on the difference in plating layer thickness determined through preliminary experiments. However, this solution has relatively poor adaptability and is applicable only to specific seed layers, and the program must be reset after the seed layer is replaced.

[0005] To solve the aforementioned problems existing in the prior art, the present invention provides an electroplating method and an electroplating apparatus.

[0006] The present invention solves the aforementioned technical problem through the following technical solution means.

[0007] An electroplating method comprises the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, the central anode corresponds to a central region of a substrate, and the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises:

[0008] S10, a step of applying a constant voltage to the central anode and not operating the edge electrode;

[0009] S20, a step of obtaining a deposition rate v1 of the plating layer in the central region and obtaining a deposition rate v2 of the plating layer in the edge region;

[0010] S30, a step for determining the sizes of v1 and v2;

[0011] S40, if v1 > v2, a step of applying a constant voltage to the edge electrode and outputting a current I;

[0012] S50, v1 <v2이면, 에지 전극에 부전압을 인가하고, 전류 I를 출력하는 단계; 및

[0013] S60, if v1=v2, further includes a step of maintaining the operating state of the edge electrode so that it does not change.

[0014] The above method first applies a constant voltage to the central anode and does not operate the edge electrode, and by obtaining the deposition rates of the plating layer in the central region and the edge region respectively, the difference in deposition rates between the edge region and the central region can be determined, and by controlling the voltage and output current of the edge electrode according to this difference, the thickness of the plating layer in the central region and the edge region of the substrate is brought closer together, thereby improving the uniformity of the electroplating.

[0015] The present invention further provides an electroplating apparatus, which includes an electroplating tank used to receive an electroplating solution, and the electroplating apparatus comprises:

[0016] A central anode installed in an electroplating solution and corresponding to a central region of the substrate;

[0017] A central power supply connected to the edge region of the substrate and the central anode, used to apply a positive voltage to the central anode and a negative voltage to the substrate;

[0018] An edge electrode installed to surround the outer periphery of a central electrode and corresponding to an edge region of a substrate;

[0019] Edge power connected to the clamping area of ​​the substrate and the edge electrode;

[0020] A central velocity detection module used to acquire the plating layer deposition rate v1 in the central region of the substrate;

[0021] An edge rate detection module used to acquire the plating layer deposition rate v2 of the edge region of the substrate; and

[0022] It further includes a control module used to compare the magnitudes of v1 and v2, and, based on the comparison result, to control the magnitudes of the positive and negative voltages and currents applied by the edge power supply to the edge electrodes.

[0023] The aforementioned electroplating device is equipped with a central power source and an edge power source. The central power source can independently supply power to the central anode, and the edge power source can independently supply power to the edge electrode. The control of the central anode and the edge electrode is relatively independent. By installing a central speed detection module and an edge speed detection module, the plating layer deposition speed of the central region and the edge region can be obtained in real time. Under the operation of the control module, the output of the edge power source can be intelligently controlled according to the magnitudes of v1 and v2, ensuring that v2 always approaches v1 until it becomes equal to v1. This device can make the plating layer thickness of the substrate more uniform and can form a closed-loop control, allowing it to be applied even after the electrical resistance of the seed layer changes, thus offering wider adaptability.

[0024] The present invention further provides an electroplating method, comprising the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, the central anode corresponds to a central region of a substrate, the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises:

[0025] S1000, a step of applying a constant voltage to a central anode, applying a constant voltage to an edge electrode, and outputting a current I;

[0026] S1100, a step of obtaining a deposition rate v1 of a plating layer in a central region and obtaining a deposition rate v2 of a plating layer in an edge region;

[0027] S1200, a step for determining the sizes of v1 and v2;

[0028] S1300, if v1 > v2, apply a constant voltage to the edge electrode, increase the output current I, and then return to step S1100;

[0029] S1400, if v1=v2, a step of maintaining the operating state of the edge electrode so that it does not change; and

[0030] S1500, v1 <v2이면, 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시키는 단계를 더 포함한다.

[0031] In the first step S1000 of the above-described method, a constant voltage is applied to the edge electrode and a current I is output. Assuming that the electrical resistance of the seed layer of the substrate is relatively small and only the central anode is set to operate, v1 becomes greater than v2. Therefore, by adopting this method, v2 can be rapidly adjusted so that v2 approaches v1 more quickly, thereby accelerating the adjustment speed.

[0032] The present invention further provides an electroplating method, comprising the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, the central anode corresponds to a central region of a substrate, the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises:

[0033] S2000, a step of applying a positive voltage to a central anode, applying a negative voltage to an edge electrode, and outputting a current I;

[0034] S2100, a step of obtaining a deposition rate v1 of a plating layer in a central region and obtaining a deposition rate v2 of a plating layer in an edge region;

[0035] S2200, a step for determining the sizes of v1 and v2;

[0036] S2300, v1 <v2이면, 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨 후, S2100 단계로 돌아가는 단계;

[0037] S2400, if v1=v2, a step of maintaining the operating state of the edge electrode so that it does not change; and

[0038] S2500, if v1>v2, further includes the step of applying a negative voltage to the edge electrode and reducing the output current I.

[0039] In the first step S2000 of the above-described method, a negative voltage is applied to the edge electrode and a current I is output. Assuming that the electrical resistance of the seed layer of the substrate is relatively large, and that only the central anode is set to operate, v2 becomes larger than v1. Therefore, by adopting this method, v2 can be rapidly adjusted so that v2 approaches v1 more quickly, thereby accelerating the adjustment speed. Brief explanation of the drawing

[0040] The features and performance of the present invention are explained in more detail by the following embodiments and the accompanying drawings. FIG. 1a is a schematic diagram of an electroplating apparatus of Example 1 of the present invention. FIG. 1b is a schematic diagram of the division of different regions in a wafer of Example 1 of the present invention. FIG. 2 is a schematic diagram of the electric field when the edge electrode of Example 1 of the present invention is a constant voltage. FIG. 3 is a schematic diagram of the electric field when the edge electrode of Example 1 of the present invention is closed. FIG. 4 is a schematic diagram of the electric field when the edge electrode of Example 1 of the present invention is at a negative voltage. FIG. 5 is a schematic diagram of the central speed detection module of Embodiment 1 of the present invention. FIG. 6 is a schematic diagram of the central thickness detector of Example 1 of the present invention. FIG. 7 is a schematic diagram of the edge velocity detection module of Example 1 of the present invention. FIG. 8 is a schematic diagram of the edge thickness detector of Example 1 of the present invention. FIG. 9 is a schematic diagram of the distribution of the central vortex sensor and the edge vortex sensor of Example 1 of the present invention. FIG. 10 is a flowchart of the electroplating method of Example 2 of the present invention. FIG. 11 is a flowchart of the electroplating method of Example 3 of the present invention. FIG. 12 is a flowchart of the electroplating method of Example 4 of the present invention. Specific details for implementing the invention

[0041] In order to explain the technical content, structural features, objectives, and effects of the present invention in detail, the following description combines the invention with embodiments and refers to the accompanying drawings; however, this does not limit the invention to the scope of the described embodiments.

[0042] Example 1

[0043] In an electroplating device equipped with multiple anodes, different anodes can be controlled independently or together. Current control methods are all open-loop control methods that do not have a feedback function, and thus cannot adjust the output power of different anodes in real time according to the state of the plating layer thickness, nor can they form a closed-loop control. Therefore, after the seed layer is replaced, the control program must be adjusted to adapt to the new seed layer, which has relatively poor adaptability, and since changes in the thickness of the plating layer cannot be detected in real time during the electroplating process, the uniformity of the plating layer cannot be controlled.

[0044] As illustrated in FIGS. 1a, 1b and 2, the present embodiment provides an electroplating apparatus capable of adjusting the output power of an edge electrode (400) in real time according to the deposition rate of a plating layer, comprising an electroplating bath (150), a cathode jig (100), a central anode (200), a central power source (300), an edge electrode (400), an edge power source (500), a central speed detection module (600), an edge speed detection module (700), and a control module (800). The electroplating bath (150) is used to contain an electroplating solution. The cathode jig (100) is used to clamp a substrate (910). The substrate (910) includes a central region (913), an edge region (912), and a clamping region (911). The central anode (200) is installed in the electroplating solution and corresponds to the central region (913) of the substrate (910). The negative electrode of the central power source (300) is connected to the clamping region (911) of the substrate (910) via the cathode jig (100) and is used to apply a negative voltage to the substrate (910). The positive electrode of the central power source (300) is connected to the central anode (200) and is used to apply a positive voltage to the central anode (200). The edge electrode (400) is installed to surround the outer periphery of the central anode (200) and corresponds to the edge region (912) of the substrate (910). The edge power source (500) is connected to the clamping region (911) of the substrate (910) via the cathode jig (100). Additionally, the edge power supply (500) is further connected to the edge electrode (400) and is used to apply a positive or negative voltage to the edge electrode (400). The central speed detection module (600) is used to obtain the plating layer deposition rate v1 of the central region (913) of the substrate (910). The edge speed detection module (700) is used to obtain the plating layer deposition rate v2 of the edge region (912) of the substrate (910).The control module (800) is used to compare the magnitudes of v1 and v2, and, based on the comparison result, to control the magnitudes of the positive voltage, negative voltage, and current applied by the edge power supply (500) to the edge electrode (400).

[0045] In another embodiment, the central power supply (300) and the edge power supply (500) may be directly connected to the clamping area (911) of the substrate (910).

[0046] In the electroplating device, a central power source (300) and an edge power source (500) are installed, the central power source (300) can independently supply power to the central anode (200), and the edge power source (500) can independently supply power to the edge electrode (400), and the control of the central anode (200) and the edge electrode (400) is relatively independent. By installing a central speed detection module (600) and an edge speed detection module (700), the plating layer deposition speed of the central region (913) and the edge region (912) can be obtained in real time, and under the operation of the control module (800), the output of the edge power source (500) can be intelligently controlled according to the size of v1 and v2, and furthermore, v2 is always made to be close to v1 until it becomes equal to v1. The electroplating device, through this control method, can form a closed-loop control and the plating layer thickness of the substrate (910) is more uniform, so it can be applied even after the electrical resistance of the seed layer changes, and has wider adaptability.

[0047] Referring to FIG. 1b and FIG. 2, in order to improve the area of ​​the effective electroplating region, the central power supply (300) and the edge power supply (500) of the electroplating device supply power to the seed layer (920) on the substrate (910) through the contact pin (930) of the cathode jig (100). The contact location between the contact pin (930) and the seed layer (920) is located in the clamping region (911) of the substrate (910). The greater the electrical resistance of the seed layer (920), the more severe the edge effect of the substrate (910). For example, when a cobalt material is adopted in the seed layer, the electric field strength of the edge region (912) of the substrate (910) is much greater than that of the central region (913) because the electrical conductivity of the cobalt is low. Furthermore, the current density of the edge region (912) of the substrate (910) is much greater than that of the central region (913), so the plating layer thickness of the edge region (912) of the substrate (910) becomes thicker than the plating layer thickness of the central region (913) of the substrate (910).

[0048] The edge electrode (400) is typically given a positive voltage and, by applying an appropriate current, improves the edge effect problem. However, as shown in FIG. 3, when the electrical resistance of the seed layer (920) is particularly high, even if the edge electrode (400) corresponding to the edge region (912) of the substrate (910) does not operate, that is, even if the output current of the edge power supply (500) is reduced to zero, the electric field strength of the edge region (912) of the substrate (910) is still greater than the electric field strength of the central region (913) of the substrate (910), and the plating layer of the edge region (912) of the substrate (910) is still thicker than the plating layer of the central region (913) of the substrate (910). In this situation, the edge power supply (500) in this embodiment may further apply a negative voltage to the edge electrode (400). The voltages of the edge electrode (400) and the central anode (200) are both based on the substrate potential as a reference value, for example, the substrate potential is considered to be 0 potential.

[0049] The edge power supply (500) can apply positive and negative voltages to the edge electrode (400), allowing it to adapt to seed layers having different electrical resistance values. When the electrical resistance of the seed layer (920) of the substrate (910) is relatively small, the edge power supply (500) applies a positive voltage to the edge electrode (400), and the electric field lines are distributed relatively uniformly in the edge region (912) and the central region (913) of the substrate (910). Specifically, the electric field line density (i.e., electric field strength) of the edge region (912) of the substrate (910) is slightly greater than that of the central region (913). In this situation, the electric field line density of the edge region (912) and the central region (913) of the substrate (910) can be controlled simply by lowering the output current of the edge power supply (500), thereby enabling the plating layer deposition rate of both regions to be the same. The greater the electrical resistance of the seed layer (920) of the substrate (910), the greater the difference in electric field line distribution between the central region (913) and the edge region (912) of the substrate (910). When the electrical resistance of the seed layer (920) of the substrate (910) is large to a certain degree, if the edge power supply (500) applies a constant voltage to the edge electrode (400), even if the current output is stopped, it is still not possible to balance the difference in the plating layer deposition rate between the edge region (912) and the central region (913). In this case, as shown in FIG. 4, the edge power supply (500) can apply a negative voltage to the edge electrode (400) so that the central anode (200) absorbs a portion of the electric field line emitted to the edge region (912) of the substrate (910), thereby further lowering the plating layer deposition rate of the edge region (912), so that the plating layer of the central region (913) and the edge region (912) of the substrate (910) becomes more uniform.

[0050] It should be noted that FIGS. 2, FIGS. 3, and FIGS. 4 are merely for illustrating the distribution of electric field lines when the edge electrode (400) is in different states, and do not represent the actual electric field distribution.

[0051] As illustrated in FIG. 5, the central speed detection module (600) includes a central thickness detector (610) and a central speed calculation module (620). The central thickness detector (610) is used to obtain a thickness value of the plating layer in the central region of the substrate (910), and the central speed calculation module (620) is used to calculate the deposition rate of the plating layer in the central region of the substrate (910) based on the thickness value of the plating layer in the central region of the substrate (910) and the detection frequency of the central thickness detector (610).

[0052] Furthermore, as illustrated in FIGS. 6 and FIGS. 9, the central thickness detector (610) includes a plurality of central vortex sensors (611) and a central thickness calculation module (612), the central vortex sensors (611) are spaced apart from the non-electroplated surface of the central region (913) of the substrate (910), the central thickness calculation module (612) is connected to the central vortex sensors (611), and the central thickness calculation module (612) receives the electrical signal of the central vortex sensors (611) and is used to output an average thickness value of the plating layer of the central region (913) of the substrate (910).

[0053] As illustrated in FIG. 7, the edge speed detection module (700) includes an edge thickness detector (710) and an edge speed calculation module (720), the edge thickness detector (710) is used to obtain a thickness value of the edge region plating layer of the substrate (910), and the edge speed calculation module (720) is used to calculate the deposition rate of the edge region plating layer of the substrate (910) according to the thickness value of the edge region plating layer of the substrate (910) and the detection frequency of the edge thickness detector (710).

[0054] Furthermore, as illustrated in FIGS. 8 and 9, the edge thickness detector (710) includes a plurality of edge vortex sensors (711) and an edge thickness calculation module (712). The edge vortex sensors (711) are spaced apart on the non-plating surface of the edge region (912) of the substrate (910), and the edge thickness calculation module (712) is connected to the edge vortex sensors (711). The edge thickness calculation module (712) receives the electrical signal from the edge vortex sensors (711) and is used to output an average thickness value of the plating layer of the edge region (912) of the substrate (910).

[0055] Specifically, the central thickness detector (610) and the edge thickness detector (710) are both connected to a power supply through a slip ring, and the power supply is used to supply power to the central thickness detector (610) and the edge thickness detector (710), thereby maintaining synchronous rotation with the substrate (910).

[0056] The control module (800), the central thickness calculation module, and the edge thickness calculation module (712) can be implemented in software, hardware, or a combination of software and hardware.

[0057] In addition, the specific implementation method of the central speed detection module (600) and the edge speed detection module (700) is not limited to the method of this embodiment, and a relatively mature method in the prior art may be adopted.

[0058] Example 2

[0059] The present embodiment further provides an electroplating method, wherein the electroplating apparatus used comprises a central anode and an edge electrode, the central anode corresponds to a central region of the substrate, and the edge electrode corresponds to an edge region of the substrate. An exemplary electroplating apparatus is illustrated in FIG. 1, but the environment in which the electroplating method of the present embodiment is carried out is not limited thereto.

[0060] Referring to FIG. 10, the electroplating method of the present embodiment specifically includes the following steps.

[0061] S10, a constant voltage is applied to the central anode, and the edge electrode does not operate.

[0062] S20, the deposition rate v1 of the plating layer in the central region of the substrate is obtained, and the deposition rate v2 of the plating layer in the edge region of the substrate is obtained.

[0063] Determine the size of S30, v1 and v2.

[0064] S40, if v1 > v2, a constant voltage is applied to the edge electrode and current I is output.

[0065] S50, v1 <v2이면, 에지 전극에 부전압을 인가하고, 전류 I를 출력한다.

[0066] S60, if v1=v2, the operating state of the edge electrode is maintained so that it does not change. That is, the voltage of the edge electrode and the output current I are not adjusted.

[0067] The output current I in steps S40 and S50 is an initial set value, and these two may be the same or different. The output current I in subsequent steps is the current value after being modified based on this initial set value.

[0068] Through the central anode and the edge electrode, the deposition rate of the plating layer in the central region and the edge region of the substrate can be controlled, respectively. In this method, a constant voltage is first applied to the central anode and the edge electrode is not operated, and by obtaining the deposition rates of the plating layer in the central region and the edge region, the difference between the deposition rates of the edge region and the central region can be determined. By controlling the voltage and output current of the edge electrode according to this difference, the thickness of the plating layer in the central region and the edge region of the substrate is brought closer together, thereby improving the uniformity of the electroplating.

[0069] Here, v1=v2 can have a deviation set according to actual usage requirements; that is, if the difference between v1 and v2 is within a predetermined range, it can all be considered as v1=v2.

[0070] After step S40, the following steps are included.

[0071] Acquire S41, v1 and v2.

[0072] S42 determines the size of v1 and v2.

[0073] S43, v1 <v2이면, 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시킨다.

[0074] S45, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0075] S46, if v1 > v2, apply a constant voltage to the edge electrode, increase the output current I, and then return to step S41.

[0076] After step S43, the following steps are included.

[0077] S44, determine whether the output current I is 0, and if I is not 0, return to step S41, and if I is 0, return to step S30.

[0078] By adopting a closed-loop control method, the voltage of the edge electrode and the output current I can be continuously adjusted dynamically according to the magnitudes of v1 and v2 until v1=v2, thereby further improving the uniformity of the substrate electroplating. In step S43, v2 can be lowered by reducing the output current I. In step S44, if the output current I is not zero, return to step S41, and if a positive voltage is applied to the edge electrode, the magnitude of v2 is changed by controlling the magnitude of the output current I until v1=v2. If the output current I is zero, it indicates that the edge electrode has already stopped operating and v1 may still be smaller than v2; in this case, return to step S30, and v2 can be further adjusted by changing the positive and negative voltages of the edge electrode.

[0079] After step S50, the following steps are included.

[0080] Acquire S51, v1 and v2.

[0081] Determine the size of S52, v1 and v2.

[0082] S53, v1 <v2이면, 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨다.

[0083] S54, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0084] S55, if v1 > v2, apply a negative voltage to the edge electrode and reduce the output current I.

[0085] In this embodiment, after step S55, the following steps are further included.

[0086] S56, determine whether the output current I is 0, and if I is not 0, return to step S51, and if I is 0, return to step S30.

[0087] In step S50, by applying a negative voltage to the edge electrode, a portion of the electric field of the central anode can be shifted, and furthermore, v2 can be lowered. After step S50, the magnitudes of v1 and v2 are reacquired, and the magnitude of the output current I is adjusted according to the magnitudes of v1 and v2, thereby dynamically adjusting v2 so that v1 becomes equal to v2. Additionally, in step S56, if I is not 0, the process returns to step S51 to perform dynamic adjustment again, and if I is 0, it indicates that the edge electrode has already stopped operating and v1 may still be greater than v2; in this case, the process must return to step S30, so v2 can be further adjusted by controlling the edge electrode to switch from a negative voltage to a positive voltage.

[0088] In this embodiment, the step of obtaining the deposition rate v1 of the plating layer in the central region at step S20 specifically includes the following steps.

[0089] S21, a central thickness detector is placed on the non-electroplated surface of the central region.

[0090] S22, v1 is calculated using the thickness value output by the central thickness detector and the detection frequency of the central thickness detector.

[0091] Specifically, the detection frequency refers to the number of times the central thickness detector performs thickness measurements every second; for example, if the detection frequency is 10 Hz, it indicates that the detector can perform 10 thickness measurements every second. v1 can be calculated by multiplying the difference between two output thickness values ​​by the detection frequency.

[0092] Furthermore, the central thickness detector includes a plurality of central vortex sensors and a central thickness calculation module, and obtains a correspondence relationship between the electrical signal output by the central vortex sensors and the plating layer thickness through a standard sample. The central thickness calculation module receives the electrical signal output by the plurality of central vortex sensors and outputs a thickness value by taking an average value according to the correspondence relationship between the electrical signal output by the central vortex sensors and the plating layer thickness.

[0093] In this embodiment, the step of obtaining the deposition rate v2 of the plating layer in the edge region at step S20 specifically includes the following steps.

[0094] S23, an edge thickness detector is placed on the non-plated surface of the edge region.

[0095] S24, v2 is calculated using the thickness value output by the edge thickness detector and the detection frequency of the edge thickness detector.

[0096] Here, the calculation principle of v2 is the same as that of v1.

[0097] Furthermore, the edge thickness detector includes a plurality of edge vortex sensors and an edge thickness calculation module, and obtains a correspondence relationship between the electrical signal output by the edge vortex sensor and the plating layer thickness through a standard sample, and the edge thickness calculation module receives the electrical signal output by the plurality of edge vortex sensors and outputs a thickness value by taking an average value according to this correspondence relationship.

[0098] The method for obtaining the deposition rate v1 of the plating layer in the central region and the method for obtaining the deposition rate v2 of the plating layer in the edge region are not limited to this, and a relatively mature electroplating deposition rate detection technology in the prior art may also be adopted.

[0099] Example 3

[0100] Referring to FIG. 11, the present embodiment provides an electroplating method and includes the following steps.

[0101] S1000 applies a constant voltage to the central anode and applies a constant voltage to the edge electrode, and outputs a current I.

[0102] S1100, obtain the deposition rate v1 of the plating layer in the central region and obtain the deposition rate v2 of the plating layer in the edge region.

[0103] Determine the size of S1200, v1 and v2.

[0104] S1300, if v1 > v2, apply a constant voltage to the edge electrode, increase the output current I, and then return to step S1100.

[0105] S1400, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0106] S1500, v1 <v2이면, 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시킨다.

[0107] The difference from Example 2 is that in this example, in the initial step S1000, a constant voltage is applied to the edge electrode and a current I is output. Assuming that the electrical resistance of the seed layer of the substrate is relatively small and only the central anode is set to operate, v1 becomes greater than v2. Therefore, by adopting this method, v2 can be rapidly adjusted so that v2 approaches v1 more quickly, thereby accelerating the adjustment speed.

[0108] The subsequent control logic is similar to the control logic of Example 2, so it is not described repeatedly here.

[0109] After step S1500, the following steps are included.

[0110] S1600 determines whether the output current I is 0, and if I is not 0, returns to step S1100, and if I is 0, executes step S1700 to apply a negative voltage to the edge electrode and outputs current I.

[0111] After step S1700, the following steps are included.

[0112] Acquire S1710, v1 and v2.

[0113] S1720 determines the size of v1 and v2.

[0114] S1730, v1 <v2이면, 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨 후, S1710 단계로 돌아간다.

[0115] S1740, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0116] S1750, if v1 > v2, apply a negative voltage to the edge electrode and reduce the output current I.

[0117] After step S1750, the following steps are included.

[0118] S1760, determine whether the output current I is 0, and if I is not 0, return to step S1710, and if I is 0, return to step S1000.

[0119] Example 4

[0120] Referring to FIG. 12, the present embodiment provides an electroplating method and includes the following steps.

[0121] S2000 applies a positive voltage to the central anode and a negative voltage to the edge electrode, and outputs a current I.

[0122] S2100, obtain the deposition rate v1 of the plating layer in the central region and obtain the deposition rate v2 of the plating layer in the edge region.

[0123] Determine the size of S2200, v1 and v2.

[0124] S2300, v1 <v2이면, 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨 후, S2100 단계로 돌아간다.

[0125] S2400, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0126] S2500, if v1 > v2, apply a negative voltage to the edge electrode and reduce the output current I.

[0127] The difference from Example 2 is that in this example, in the initial step S2000, a negative voltage is applied to the edge electrode and current I is output. Assuming that the electrical resistance of the seed layer of the substrate is relatively large, and only the central anode is set to operate, v2 becomes larger than v1. Therefore, by adopting this method, v2 can be quickly adjusted, allowing v2 to approach v1 more quickly, thereby accelerating the adjustment speed.

[0128] The subsequent control logic is similar to the control logic of Example 2, so it is not described repeatedly here.

[0129] After step S2500, the following steps are included.

[0130] S2600 determines whether the output current I is 0, and if I is not 0, returns to step S2100, and if I is 0, executes step S2700 to apply a constant voltage to the central anode and applies a constant voltage to the edge electrode.

[0131] After step S2700, the following steps are included.

[0132] Acquire S2710, v1 and v2.

[0133] S2720 determines the size of v1 and v2.

[0134] S2730, if v1 > v2, apply a constant voltage to the edge electrode, increase the output current I, and then return to step S2710.

[0135] S2740, if v1=v2, the operating state of the edge electrode is maintained so that it does not change.

[0136] S2750, v1 <v2이면, 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시킨다.

[0137] After step S2750, the following steps are included.

[0138] S2760, determine whether the output current I is 0, and if I=0, return to step S2000, and if I is not 0, return to step S2710.

[0139] Although specific embodiments of the present invention have been described above, those skilled in the art should understand that these are merely illustrative descriptions and that various changes or modifications can be made to such embodiments without departing from the principles and substance of the present invention. Accordingly, the scope of protection of the present invention is limited by the appended claims.

Claims

Claim 1 An electroplating method comprises the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, wherein the central anode corresponds to a central region of a substrate and the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises: S10, a step of applying a constant voltage to the central anode and not operating the edge electrode; S20, a step of obtaining a deposition rate v1 of a plating layer in the central region and obtaining a deposition rate v2 of a plating layer in the edge region; S30, a step of determining the magnitudes of v1 and v2; S40, a step of, if v1 > v2, applying a constant voltage to the edge electrode and outputting a current I; S50, v1 <v2이면, 상기 에지 전극에 부전압을 인가하고, 전류 I를 출력하는 단계; 및S60, v1=v2이면, 상기 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계를 더 포함하는 것을 특징으로 하는, 전기도금 방법. Claim 2 In claim 1, after step S40, S41, a step of obtaining v1 and v2; S42, a step of determining the size of v1 and v2; S43, v1 <v2이면, 상기 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시키는 단계;S45, v1=v2이면, 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계; 및S46, v1> An electroplating method characterized by further including the step of, if v2, applying a constant voltage to the edge electrode, increasing the output current I, and then returning to step S41. Claim 3 An electroplating method according to claim 2, characterized by further including, after step S43, step S44, a step of determining whether the output current I is 0, returning to step S41 if I is not 0, and returning to step S30 if I is 0. Claim 4 In claim 1, after step S50, S51, a step of obtaining v1 and v2; S52, a step of determining the size of v1 and v2; S53, v1 <v2이면, 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시키는 단계;S54, v1=v2이면, 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계; 및S55, v1> An electroplating method characterized by further including the step of applying a negative voltage to the edge electrode and reducing the output current I when v2. Claim 5 An electroplating method according to claim 4, characterized by further including, after step S55, step S56, a step of determining whether the output current I is 0, returning to step S51 if I is not 0, and returning to step S30 if I is 0. Claim 6 The electroplating method according to claim 1, wherein step S20 specifically comprises: a step of placing a central thickness detector on a non-electroplated surface of the central region; a step of calculating v1 through a thickness value output by the central thickness detector and a detection frequency of the central thickness detector; a step of placing an edge thickness detector on a non-electroplated surface of the edge region; and a step of calculating v2 through a thickness value output by the edge thickness detector and a detection frequency of the edge thickness detector. Claim 7 In claim 6, the central thickness detector comprises a plurality of central vortex sensors and a central thickness calculation module, and the method comprises the step of obtaining a correspondence relationship between an electrical signal output by a central vortex sensor and a plating layer thickness through a standard sample, and the central thickness calculation module receives an electrical signal output by a plurality of central vortex sensors and outputs a thickness value through a method of taking an average value according to the correspondence relationship, and the edge thickness detector comprises a plurality of edge vortex sensors and an edge thickness calculation module, and the method comprises the step of obtaining a correspondence relationship between an electrical signal output by an edge vortex sensor and a plating layer thickness through a standard sample, and the edge thickness calculation module receives an electrical signal output by a plurality of edge vortex sensors and outputs a thickness value through a method of taking an average value according to the correspondence relationship. Claim 8 An electroplating device comprising an electroplating bath used to receive an electroplating solution, wherein the electroplating device further comprises: a central anode installed within the electroplating solution and corresponding to a central region of a substrate; a central power source connected to a clamping region of the substrate and the central anode, used to apply a positive voltage to the central anode and a negative voltage to the substrate; an edge electrode installed to surround the outer periphery of the central electrode and corresponding to an edge region of the substrate; an edge power source connected to a clamping region of the substrate and the edge electrode; a central speed detection module used to obtain a plating layer deposition rate v1 of the central region of the substrate; an edge speed detection module used to obtain a plating layer deposition rate v2 of the edge region of the substrate; and a control module used to compare the magnitudes of v1 and v2 and to control the magnitude of the positive voltage, negative voltage, and current applied by the edge power source to the edge electrode according to the comparison result. Claim 9 An electroplating apparatus according to claim 8, wherein the central speed detection module comprises: a central thickness detector used to obtain a thickness value of a plating layer; and a central speed calculation module used to calculate the deposition rate of a plating layer in a central region according to the thickness value and the detection frequency of the central thickness detector. Claim 10 An electroplating apparatus according to claim 9, wherein the central thickness detector comprises: a plurality of central vortex sensors spaced apart from the non-electroplating surface of the central region of the substrate; and a central thickness calculation module connected to the plurality of central vortex sensors and used to receive electrical signals from the plurality of central vortex sensors and output an average thickness value of the central region. Claim 11 An electroplating apparatus according to claim 8, wherein the edge speed detection module comprises: an edge thickness detector used to obtain a thickness value of a plating layer; and an edge speed calculation module used to calculate the deposition rate of a plating layer in an edge region according to the thickness value and the detection frequency of the edge thickness detector. Claim 12 An electroplating apparatus according to claim 11, wherein the edge thickness detector comprises: a plurality of edge vortex sensors spaced apart and distributed on the non-plating surface of the edge region of the substrate; and an edge thickness calculation module connected to the plurality of edge vortex sensors and used to receive electrical signals from the plurality of edge vortex sensors and output an average thickness value of the edge region. Claim 13 An electroplating method comprises the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, wherein the central anode corresponds to a central region of a substrate and the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises: S1000, a step of applying a constant voltage to the central anode and applying a constant voltage to the edge electrode and outputting a current I; S1100, a step of obtaining a deposition rate v1 of a plating layer in the central region and obtaining a deposition rate v2 of a plating layer in the edge region; S1200, a step of determining the magnitudes of v1 and v2; S1300, if v1 > v2, a step of applying a constant voltage to the edge electrode, increasing the output current I, and then returning to step S1100; S1400, if v1 = v2, a step of maintaining the operating state of the edge electrode so as not to change; and S1500, v1 <v2이면, 상기 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시키는 단계를 더 포함하는 것을 특징으로 하는, 전기도금 방법. Claim 14 An electroplating method according to claim 13, further comprising the step of, after step S1500, determining at S1600 whether the applied current I is 0, and if I is not 0, returning to step S1100, and if I is 0, applying a negative voltage to the edge electrode and outputting the current I at step S1700. Claim 15 In paragraph 14, after step S1700, S1710, a step of obtaining v1 and v2; S1720, a step of determining the size of v1 and v2; S1730, v1 <v2이면, 상기 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨 후, S1710 단계로 돌아가는 단계;S1740, v1=v2이면, 상기 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계; 및S1750, v1> An electroplating method characterized by further including the step of applying a negative voltage to the edge electrode and reducing the output current I when v2. Claim 16 An electroplating method according to claim 15, characterized by further including, after step S1750, step S1760, a step of determining whether the output current I is 0, returning to step S1710 if I is not 0, and returning to step S1000 if I is 0. Claim 17 An electroplating method comprises the step of providing an electroplating apparatus, wherein the electroplating apparatus comprises a central anode and an edge electrode, wherein the central anode corresponds to a central region of a substrate and the edge electrode corresponds to an edge region of a substrate, and the electroplating method comprises: S2000, a step of applying a positive voltage to the central anode and applying a negative voltage to the edge electrode and outputting a current I; S2100, a step of obtaining a deposition rate v1 of a plating layer in the central region and obtaining a deposition rate v2 of a plating layer in the edge region; S2200, a step of determining the magnitudes of v1 and v2; S2300, v1 <v2이면, 상기 에지 전극에 부전압을 인가하고, 출력 전류 I를 증가시킨 후, S2100 단계로 돌아가는 단계;S2400, v1=v2이면, 상기 에지 전극의 작동 상태가 변하지 않도록 유지하는 단계; 및S2500, v1> An electroplating method characterized by further including the step of applying a negative voltage to the edge electrode and reducing the output current I when v2. Claim 18 An electroplating method according to claim 17, further comprising the step of, after step S2500, determining at S2600 whether the output current I is 0, returning to step S2100 if I is not 0, and if I is 0, applying a constant voltage to the central anode and applying a constant voltage to the edge electrode and outputting the current I at step S2700. Claim 19 In claim 18, after step S2700, S2710, a step of obtaining v1 and v2; S2720, a step of determining the magnitudes of v1 and v2; S2730, if v1 > v2, a step of applying a constant voltage to the edge electrode, increasing the output current I, and then returning to step S2710; S2740, if v1 = v2, a step of maintaining the operating state of the edge electrode so as not to change; and S2750, v1 <v2이면, 상기 에지 전극에 정전압을 인가하고, 출력 전류 I를 감소시키는 단계를 더 포함하는 것을 특징으로 하는, 전기도금 방법. Claim 20 An electroplating method according to claim 19, characterized by further including, after step S2750, step S2760, a step of determining whether the output current I is 0, returning to step S2000 if I=0, and returning to step S2710 if I is not 0.

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