Substrate Processing Apparatus

Abstract

The technical concept of the present invention provides a substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space inside; a substrate support member supporting a substrate in the processing space; a gas supply member supplying a process gas in the processing space; a plasma source exciting the process gas in the processing space into a plasma state; and a magnetic field forming member disposed on the chamber and configured to form a magnetic field in the region where the plasma is generated inside the processing space, wherein the magnetic field forming member comprises an inner coil wound in a first direction, an outer coil wound in a second direction opposite to the first direction and formed integrally with the inner coil, and a power source supplying power to the inner coil and the outer coil.

Description

Technology Field

[0001] The technical concept of the present invention relates to a substrate processing apparatus. More specifically, it relates to a substrate processing apparatus. Background Technology

[0002] Plasma can be utilized in substrate processing. For example, plasma can be used in etching, deposition, or dry cleaning processes. Plasma is generated by very high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF Electromagnetic Fields). Plasma refers to an ionized gaseous state composed of ions, electrons, radicals, etc. Dry cleaning, ashing, or etching processes using plasma are performed by ion or radical particles contained in the plasma colliding with the substrate.

[0003] Plasma can be generated using a coil-shaped plasma generator. When using a coil-shaped plasma generator, it is necessary to control the amount and direction of the current to control the magnetic flux. In other words, to control the magnetic flux, it is necessary to effectively control the direction of the coil and the direction of the current flowing through the coil. The problem to be solved

[0004] The problem that the technical concept of the present invention aims to solve is to form the inner coil and the outer coil of the magnetic field forming part as a single unit.

[0005] Another problem that the technical concept of the present invention aims to solve is to supply current to the inner coil and the outer coil of the magnetic field forming unit using a single power source. means of solving the problem

[0006] To solve the aforementioned problem, the technical concept of the present invention provides a substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space inside; a substrate support member supporting a substrate in the processing space; a gas supply member supplying a process gas in the processing space; a plasma source exciting the process gas in the processing space into a plasma state; and a magnetic field forming member disposed on the chamber and configured to form a magnetic field in the region where the plasma is generated inside the processing space, wherein the magnetic field forming member comprises an inner coil wound in a first direction, an outer coil wound in a second direction opposite to the first direction and formed integrally with the inner coil, and a power source supplying power to the inner coil and the outer coil.

[0007] To solve the above-mentioned problem, the technical concept of the present invention provides a substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space inside; a substrate support unit for supporting a substrate in the processing space; a gas supply unit for supplying a process gas in the processing space; a plasma source for exciting the process gas in the processing space into a plasma state; and a magnetic field forming unit disposed on the chamber and configured to form a magnetic field in a region where plasma is generated inside the processing space, wherein the magnetic field forming unit comprises: a first coil part including a first inner coil wound in a first direction and a first outer coil wound in a second direction opposite to the first direction and formed integrally with the first inner coil; a second coil part including a second inner coil wound in the first direction and a second outer coil wound in the second direction and formed integrally with the second inner coil; and a power source for supplying power to the first coil part and the second coil part. Effects of the invention

[0008] According to exemplary embodiments of the present invention, by integrally forming the inner coil and the outer coil of the magnetic field forming part, the strength of the magnetic field can be easily controlled.

[0009] In addition, according to exemplary embodiments of the present invention, by supplying current to the inner coil and the outer coil of the magnetic field forming unit using a single power source, the number of unnecessary power sources can be reduced. Brief explanation of the drawing

[0010] FIG. 1 is a cross-sectional view briefly showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a simplified diagram showing a magnetic field forming unit of a substrate processing device according to a first embodiment of the present invention. FIG. 3 is a simplified diagram showing a magnetic field forming unit of a substrate processing device according to a second embodiment of the present invention. FIG. 4 is a simplified diagram showing the magnetic field forming unit of a substrate processing device according to the third embodiment of the present invention. FIG. 5 is a simplified diagram showing the magnetic field forming unit of a substrate processing device according to the fourth embodiment of the present invention. FIG. 6 is a drawing showing a cross-section of a coil according to one embodiment of the present invention. Specific details for implementing the invention

[0011] Hereinafter, embodiments of the technical concept of the present invention will be described in detail with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted.

[0012] FIG. 1 is a cross-sectional view briefly showing a substrate processing apparatus according to one embodiment of the present invention.

[0013] Referring to FIG. 1, the substrate processing device (1) may include all or part of a chamber (11), a showerhead (12), a substrate support (13), a gas supply unit (14), and a magnetic field forming unit (15).

[0014] The chamber (11) may provide a processing space (101) for processing a substrate (W). The process on the substrate (W) may be etching or deposition, but is not limited thereto. The chamber (11) may have a cylindrical shape in which the processing space (101) is provided. An exhaust pipe (not shown) for discharging by-products generated during the process may be connected to the lower wall of the chamber (11). A pump (not shown) that maintains the inside of the chamber (11) at a process pressure during the process and a valve (not shown) that opens and closes the passage within the exhaust pipe may be installed in the exhaust pipe.

[0015] A substrate support (13) may be provided in the chamber (11). The substrate support (13) may be positioned at the bottom of the processing space (101) to support the substrate (W). The substrate support (13) may be an electrostatic chuck that fixes the substrate (W) by electrostatic force, but the substrate support (13) of the present invention is not limited to an electrostatic chuck. The substrate support (13) may generally have a disc shape. The substrate support (13) may fix the substrate (W) using a method such as electrostatic force or mechanical clamping.

[0016] The chamber (11) and the shower head (12) can form a first space (102). A gas supply unit (14) is connected to the first space (102) and can supply process gas to the first space (102). The gas supply unit (14) may include a gas supply pipe (142) connecting the first space (102) and the gas supply source, and a valve (141) that opens and closes the internal passage of the gas supply pipe (142).

[0017] The shower head (12) can uniformly spray process gas introduced into the first space (102) into the upper region of the processing space (101). The shower head (12) can be positioned to face the substrate support (13). The shower head (12) may have an annular side wall and a disc-shaped spray plate. The spray plate may be fixedly connected to the bottom of the side wall. A plurality of spray holes (12a) may be formed in the entire area of ​​the spray plate. After the process gas is introduced into the first space (102), it can be sprayed into the processing space (101) through the spray holes (12a).

[0018] A plasma source can generate plasma from a process gas supplied to the upper region of the processing space (101). A capacitively coupled plasma may be used as the plasma source. The plasma source may include an upper electrode, a lower electrode, and a power supply. The spray plate of the showerhead (12) is made of a metal material and can function as the upper electrode. The lower electrode may be provided in the internal space of the substrate support (13). The power supply may apply high-frequency power (RF power) or microwave power to the upper electrode or the lower electrode. Optionally, power may be applied to either the upper electrode or the lower electrode, and the other electrode may be grounded.

[0019] The magnetic field generating unit (15) may be positioned at the top of the chamber (11) to provide a magnetic field to the area where plasma is formed. The magnetic field generating unit (15) may include all or part of an inner coil (151), an outer coil (152), and a power source (153). The inner coil (151) may be located inside the outer coil (152). The radius of the inner coil (151) may be smaller than the radius of the outer coil (152). The inner coil (151) may be located above the outer coil (152). However, it is not limited thereto, and the inner coil (151) may be located at the same height as the outer coil (152) or below it. The power source (153) is connected to the inner coil (151) and the outer coil (152) and may provide RF power to the inner coil (151) and the outer coil (152).

[0020] A magnetic field forming unit (15) of a substrate processing device (1) according to one embodiment of the present invention may include an inner coil (151) wound in a first direction and an inner coil (152) wound in a second direction opposite to the first direction. For example, if the inner coil (151) is wound in a clockwise direction, the outer coil (152) may be wound in a counterclockwise direction. Additionally, if the inner coil (151) is wound in a counterclockwise direction, the outer coil (152) may be wound in a clockwise direction. Since the inner coil (151) and the outer coil (152) are mechanically wound in mutually opposite directions, there is no need to control the current direction of the inner coil (151) and the outer coil (152) by electrically reversing them.

[0021] The inner coil (151) and the outer coil (152) are wound in opposite directions, but the inner coil (151) and the outer coil (152) can be formed as a single unit. The inner coil (151) and the outer coil (152) may not be composed of separate coils but may be composed of a single coil. The inner coil (151) and the outer coil (152) may be composed of a single coil and positioned with a height difference. By configuring the inner coil (151) and the outer coil (152) as a single coil, the current supplied from the power source (153) can flow sequentially through the inner coil (151) and the outer coil (152).

[0022] For example, current supplied from the power source (153) may flow through the inner coil (151) and the outer coil (152) sequentially to the power source (153). Additionally, current supplied from the power source (153) may flow through the outer coil (152) and the inner coil (151) sequentially to the power source (153).

[0023] A substrate processing device (1) according to one embodiment of the present invention has the effect of easily controlling the strength of the magnetic field by integrally forming the inner coil (151) and the outer coil (152) of the magnetic field forming unit (15). The current flowing through the inner coil (151) and the outer coil (152) can be controlled using a single power source (153). Therefore, the number of unnecessary power sources can be reduced, and the ratio of the current flowing through the inner coil (151) and the outer coil (152) can be adjusted using a simple control method.

[0024] Additionally, the number of turns of the inner coil (151) and the outer coil (152) may differ from each other. By making the number of turns of the inner coil (151) and the outer coil (152) different according to the design, the strength of the magnetic field formed around the magnetic field forming part (15) can be adjusted. However, this is not limited thereto, and the number of turns of the inner coil (151) and the outer coil (152) may be the same as needed.

[0025] FIG. 2 is a simplified diagram showing a magnetic field forming unit of a substrate processing device according to a first embodiment of the present invention.

[0026] Referring to FIG. 2, the magnetic field forming unit (15) of the substrate processing device according to the first embodiment of the present invention may include an inner coil (151), an outer coil (152), and a power source (153). The power source (153) may include a first RF filter (1531a) and a second RF filter (1531b).

[0027] The inner coil (151) and the outer coil (152) may be wound in opposite directions. Although FIG. 2 is illustrated with the inner coil (151) being wound clockwise and the outer coil (152) being wound counterclockwise, it is not limited thereto and the inner coil (151) may be wound counterclockwise and the outer coil (152) may be wound clockwise.

[0028] The inner coil (151) and the outer coil (152) are wound in opposite directions, but the inner coil (151) and the outer coil (152) can be formed as a single unit. The inner coil (151) and the outer coil (152) may not be composed of separate coils but may be composed of a single coil. By configuring the inner coil (151) and the outer coil (152) as a single coil, the current supplied from the power source (153) can flow sequentially through the inner coil (151) and the outer coil (152).

[0029] For example, current can flow from the positive (+) terminal of the first RF filter (1531a) to the outer coil (152). The current flows through the outer coil (152), which is wound counterclockwise, and then to the inner coil (151). The current flows clockwise from the inner coil (151) and then to the negative (-) terminal of the second RF filter (1531b). Additionally, current can flow from the positive (+) terminal of the second RF filter (1531b) to the inner coil (151). The current flows through the inner coil (151), which is wound clockwise, and then to the outer coil (152). The current flows clockwise from the outer coil (152) and then to the negative (-) terminal of the first RF filter (1531a).

[0030] Since the inner coil (151) and the outer coil (152) are mechanically wound in opposite directions, the strength of the magnetic field formed around the magnetic field generating part (15) can be controlled by adjusting the strength of the current flowing through each coil. That is, the strength of the magnetic field formed on the top of the substrate (W) can be controlled.

[0031] FIG. 3 is a simplified diagram showing a magnetic field forming unit of a substrate processing device according to a second embodiment of the present invention.

[0032] Referring to FIG. 3, the magnetic field forming unit (15) of the substrate processing device according to the second embodiment of the present invention may include an inner coil (151), an outer coil (152), a power supply (153), and a current regulator (154). The power supply (153) may include a first RF filter (1531a) and a second RF filter (1531b).

[0033] The inner coil (151) and the outer coil (152) may be wound in opposite directions. Although FIG. 3 is illustrated as the inner coil (151) being wound clockwise and the outer coil (152) being wound counterclockwise, it is not limited thereto and the inner coil (151) may be wound counterclockwise and the outer coil (152) may be wound clockwise.

[0034] The inner coil (151) and the outer coil (152) are wound in opposite directions, but the inner coil (151) and the outer coil (152) can be formed as a single unit. The inner coil (151) and the outer coil (152) may not be composed of separate coils but may be composed of a single coil. By configuring the inner coil (151) and the outer coil (152) as a single coil, the current supplied from the power source (153) can flow sequentially through the inner coil (151) and the outer coil (152).

[0035] A current regulator (154) may be positioned between an inner coil (151) and an outer coil (152). The current regulator (154) can regulate the strength of the current flowing from the inner coil (151) to the outer coil (152). Additionally, the current regulator (154) can regulate the strength of the current flowing from the outer coil (152) to the inner coil (151). At this time, the current regulator (154) may include a plurality of circuit structures.

[0036] As described above, current can flow from the positive (+) terminal of the first RF filter (1531a) to the outer coil (152). The current flows through the outer coil (152), which is wound counterclockwise, and then flows to the inner coil (151). After flowing clockwise from the inner coil (151), the current can flow to the negative (-) terminal of the second RF filter (1531b). The current regulator (154) can reduce the intensity of the current flowing from the outer coil (152) to the inner coil (151). For example, the current regulator (154) can reduce the current by about 10 mA to 20 A by comparing the intensity of the current flowing in the inner coil (151) with the intensity of the current flowing in the outer coil (152).

[0037] Additionally, current can flow from the positive (+) terminal of the second RF filter (1531b) to the inner coil (151). The current flows through the inner coil (151), which is wound clockwise, and then flows to the outer coil (152). After flowing clockwise from the outer coil (152), the current can flow to the negative (-) terminal of the first RF filter (1531a). The current regulator (154) can reduce the intensity of the current flowing from the inner coil (151) to the outer coil (152). For example, the current regulator (154) can reduce the current by about 10 mA to 20 A by comparing the intensity of the current flowing through the outer coil (152) with the intensity of the current flowing through the inner coil (151).

[0038] Since the inner coil (151) and the outer coil (152) are mechanically wound in opposite directions, the strength of the magnetic field formed around the magnetic field forming part (15) can be controlled by adjusting the strength of the current flowing through each coil. Additionally, the strength of the magnetic field formed around the magnetic field forming part (15) can be controlled by adjusting the strength of the current flowing through the inner coil (151) and the outer coil (152) using a current regulator (154).

[0039] FIG. 4 is a simplified diagram showing the magnetic field forming unit of a substrate processing device according to the third embodiment of the present invention.

[0040] Referring to FIG. 4, the magnetic field forming unit (15) of the substrate processing device according to the third embodiment of the present invention may include an inner coil (151), an outer coil (152), a power source (153), and a current regulator (154). The power source (153) may include an RF filter (1531).

[0041] The inner coil (151) and the outer coil (152) may be wound in opposite directions. Although FIG. 4 is illustrated as the inner coil (151) being wound clockwise and the outer coil (152) being wound counterclockwise, it is not limited thereto and the inner coil (151) may be wound counterclockwise and the outer coil (152) may be wound clockwise.

[0042] The inner coil (151) and the outer coil (152) are wound in opposite directions, but the inner coil (151) and the outer coil (152) can be formed as a single unit. The inner coil (151) and the outer coil (152) may not be composed of separate coils but may be composed of a single coil. By configuring the inner coil (151) and the outer coil (152) as a single coil, the current supplied from the power source (153) can flow sequentially through the inner coil (151) and the outer coil (152).

[0043] The current regulator (154) is connected to the power source (153) and can be branched into an inner coil (151) and an outer coil (152). The current regulator (154) can regulate the strength of the current flowing from the inner coil (151) to the outer coil (152). Additionally, the current regulator (154) can regulate the strength of the current flowing from the outer coil (152) to the inner coil (151).

[0044] Current can flow from the positive (+) terminal of the RF filter (1531) through the current regulator (154) to the outer coil (152). The current flows through the outer coil (152), which is wound counterclockwise, and then through the current regulator (154) to the inner coil (151). After flowing clockwise from the inner coil (151), the current can flow through the current regulator (154) to the negative (-) terminal of the RF filter (1531). The current regulator (154) can reduce the intensity of the current flowing from the outer coil (152) to the inner coil (151). For example, the current regulator (154) can reduce the current by about 10 mA to 20 A by comparing the intensity of the current flowing in the inner coil (151) with the intensity of the current flowing in the outer coil (152).

[0045] Additionally, current can flow from the positive (+) terminal of the RF filter (1531) through the current regulator (154) to the inner coil (151). The current flows through the inner coil (151), which is wound clockwise, and then through the current regulator (154) to the outer coil (152). After flowing clockwise from the outer coil (152), the current can flow through the current regulator (154) to the negative (-) terminal of the RF filter (1531). The current regulator (154) can reduce the intensity of the current flowing from the inner coil (151) to the outer coil (152). For example, the current regulator (154) can reduce the current by about 10 mA to 20 A by comparing the intensity of the current flowing in the outer coil (152) with the intensity of the current flowing in the inner coil (151).

[0046] Since the inner coil (151) and the outer coil (152) are mechanically wound in opposite directions, the strength of the magnetic field formed around the magnetic field forming part (15) can be controlled by adjusting the strength of the current flowing through each coil. Additionally, the strength of the magnetic field formed around the magnetic field forming part (15) can be controlled by adjusting the strength of the current flowing through the inner coil (151) and the outer coil (152) using a current regulator (154).

[0047] FIG. 5 is a simplified diagram showing the magnetic field forming unit of a substrate processing device according to the fourth embodiment of the present invention.

[0048] Referring to FIG. 5, the magnetic field forming unit (15) of the substrate processing device according to the fourth embodiment of the present invention may include a first inner coil (151a) to a third inner coil (151c), a first outer coil (152a) to a third outer coil (152c), a power source (153), and a first current regulator (154a) to a third current regulator (154c). The power source (153) may include a first RF filter (1531a) to a sixth RF filter (1531f).

[0049] The first inner coil (151a), the first outer coil (152a), and the first current regulator (154a) can form the first coil section. The first RF filter (1531a) and the second RF filter (1531b) can supply current to the first coil section. The second inner coil (151b), the second outer coil (152b), and the second current regulator (154b) can form the second coil section. The third RF filter (1531c) and the fourth RF filter (1531d) can supply current to the second coil section. The third inner coil (151c), the third outer coil (152c), and the third current regulator (154c) can form the third coil section. The fifth RF filter (1531e) and the sixth RF filter (1531f) can supply current to the third coil section.

[0050] Each of the first to third coil sections may have the same configuration and control method as the magnetic field forming section (15) of the substrate processing device (1) according to the second embodiment of the present invention shown in FIG. 3. In FIG. 5, the first inner coil (151a) to the third inner coil (151c) is shown as being wound counterclockwise and the first outer coil (152a) to the third outer coil (152c) is shown as being wound clockwise; however, as described above, the first inner coil (151a) to the third inner coil (151c) may be wound clockwise and the first outer coil (152a) to the third outer coil (152c) may be wound counterclockwise. The description of the current flow and effects of the first to third coil sections is omitted.

[0051] A second coil section may be located at the bottom of the first coil section, and a third coil section may be located at the bottom of the second coil section. By overlapping the first to third coil sections, the magnetic fields formed by the first to third coil sections overlap, thereby strengthening the magnetic field. By overlapping the first to third coil sections, there is an effect of reducing the heat generated by the coils compared to forming a single coil with a high height. Furthermore, by adjusting the amount of current flowing through each of the first to third coil sections, there is an effect of controlling the amount of heat generated by the first to third coil sections. Additionally, there is an effect of strengthening the magnetic field through magnetic field overlap while relatively lowering the intensity of the current flowing through each of the first to third coil sections.

[0052] FIG. 6 is a drawing showing a cross-section of a coil according to one embodiment of the present invention.

[0053] Referring to FIG. 6, the cross-section of the coil is described using the inner coil (151) as an example, but the outer coil (152) may also have the same cross-section. The inner coil (151) may include a cover (1511), a sheet (1512), and a conduit (1513).

[0054] The cover (1511) can cover the entire outer surface of the inner coil (151). The cover (1511) may be made of a metal material. In order to shield RF noise from the magnetic field generating part (15), the metal material may surround the inner coil (151). For example, the cover (1511) may be made of stainless steel (e.g., STS316L).

[0055] The sheet (1512) and the conduit (1513) can cool the heat generated as current flows through the inner coil (151). The conduit (1513) has a cylindrical shape and can carry a cooling fluid. The sheet (1512) may be made of a material such as copper. A copper sheet (1512) can dissipate heat generated from the inner coil (151). In FIG. 6, the sheet (1512) is formed with two vertical lines, but it is not limited to this and the number and position can be designed in various ways as needed.

[0056] As described above, exemplary embodiments have been disclosed in the drawings and specification. Although specific terms have been used to describe the embodiments in this specification, they are used only for the purpose of explaining the technical concept of this disclosure and are not intended to limit the meaning or the scope of this disclosure as defined in the claims. Therefore, those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of this disclosure should be determined by the technical concept of the appended claims. Explanation of the symbols

[0057] 1: Substrate processing device 11: Chamber 12: Shower head 13: Circuit board support 14: Gas supply unit 15: Magnetic field forming unit

Claims

Claim 1 A substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space inside; a substrate support member supporting the substrate in the processing space; a gas supply member supplying a process gas in the processing space; a plasma source exciting the process gas in the processing space into a plasma state; and a magnetic field forming member disposed on the chamber and configured to form a magnetic field in a region where the plasma is generated inside the processing space, wherein the magnetic field forming member comprises an inner coil wound in a first direction, an outer coil wound in a second direction opposite to the first direction and formed integrally with the inner coil, and a power source supplying power to the inner coil and the outer coil, wherein the current supplied from the power source flows in the first direction in the inner coil and flows in the second direction in the outer coil. Claim 2 A substrate processing apparatus according to claim 1, wherein the magnetic field forming unit further comprises a current regulator located between the inner coil and the outer coil. Claim 3 A substrate processing apparatus according to claim 1, wherein the magnetic field forming unit further comprises a current regulator connected to the power source and branched into the inner coil and the outer coil. Claim 4 A substrate processing apparatus according to claim 1, characterized in that the number of turns of the inner coil and the outer coil are different. Claim 5 A substrate processing device according to claim 1, wherein the inner coil is located above the outer coil. Claim 6 A substrate processing apparatus according to claim 1, wherein the power source comprises a first RF filter connected to the outer coil; and a second RF filter connected to the inner coil. Claim 7 A substrate processing apparatus according to claim 1, wherein the power supply is characterized by supplying power in the direction of one of the inner coil and the outer coil. Claim 8 A substrate processing apparatus for processing a substrate comprises: a chamber having a processing space inside; a substrate support unit for supporting the substrate in the processing space; a gas supply unit for supplying a process gas to the processing space; a plasma source for exciting the process gas to a plasma state in the processing space; and a magnetic field forming unit disposed on the chamber and configured to form a magnetic field in a region where the plasma is generated inside the processing space, wherein the magnetic field forming unit comprises: a first coil part including a first inner coil wound in a first direction and a first outer coil wound in a second direction opposite to the first direction and formed integrally with the first inner coil; and a second coil part including a second inner coil wound in the first direction and a second outer coil wound in the second direction and formed integrally with the second inner coil. A substrate processing apparatus comprising a power source that supplies power to the first coil portion and the second coil portion, wherein the current supplied from the power source to the first coil portion flows in the first direction in the first inner coil and in the second direction in the first outer coil, and the current supplied from the power source to the second coil portion flows in the first direction in the second inner coil and in the second direction in the second outer coil. Claim 9 A substrate processing apparatus according to claim 8, wherein the first coil portion and the second coil portion are each independently formed coils. Claim 10 A substrate processing apparatus according to claim 8, wherein the first coil portion further includes a first current regulator located between the first inner coil and the first outer coil, and the second coil portion further includes a second current regulator located between the second inner coil and the second outer coil.

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