Non-volatile memory cell and process for its realization

Abstract

The invention relates to programmable microelectronic systems, in particular to non-volatile solid electrolyte memory cells based on glassy chalcogenides and can be used in electronic devices including programmable memory circuits in the form of binary data, which are widely required in automation systems for control and execution devices, as in electronic computers of all types.The non-volatile memory cell and the process for its realization include a substrate (1), on which is grown an insulating film of SiO2(2), on which are consecutively deposited a passive metal electrode (3) of Pt, a solid electrolyte layer (4), made of glassy chalcogenide with the self-organized structure Ge7,7As15,3S77-Ag and an electrochemically active electrode of Ag (5), the cell is equipped with a voltage pulse generator (6), and a recording device (7).