Photovoltaic Device

Abstract

A solar photovoltaic module or monolithically interconnected module (MIM) consists of densely packed solar cells interconnected in series configuration by 3 scribing processes (P1, P2, P3) on the same substrate. The interconnection of the cells is achieved by an opening formed between the 1st conductive electrode of the nth cell and the 2nd conductive electrode of the (n+1)th cell of the cell pack. To complete the interconnection, the electrical isolation of each cell?s electrodes is scribed. The novel structure of the present invention is accomplished by converting the interconnection zone?s electrical behavior from a reverse-connected diode to a resistor under a high enough application of voltage.

Description

1 TARIFF PHOTOVOLTAIC DEVICE Technical Area This invention relates to the field of thin-film photovoltaic devices, which convert sunlight into electricity. Furthermore... Specifically, the invention describes a manufacturing method that does not require drawing a P2 interconnection region. It focuses on the development of a series-connected monolithic module structure that makes this possible. State of the Art Small, laboratory-scale photovoltaic devices can meet the electrical needs of household appliances. It cannot meet the demand. In order to increase energy production capacity, large-scale Monolithic Interconnected Modules (MIMs) have been developed. MIMs are intermediate modules that share the same substrate and are serially interconnected. They are densely packed arrays of interconnected photovoltaic (PV) cells. 5 in series connected Thanks to the configuration, the output voltage of a MIM is linearly related to the number of cells connected in series. It is dependent. The photon-generated current of the MIMs is confined to a single cell within the setup. This structure, These devices significantly reduce the joule energy loss caused by current flowing through the contacts. It has been extensively developed over the last few decades. The most advanced MIM contains six layers: substrate, primary conductive layer, charge-carrying layer, 10 Photoabsorbing layer, opposite charge transport layer, and secondary conductive layer. At least one of the conductive layers... one of which corresponds to the band gap of the active layer and is absorbed by the photo-absorbing layer. It must be transparent to the spectral range. The fabrication method of an MIM involves a substrate of the primary conductive layer. The process begins with placing the material onto a plate. Then, the process involves using materials to create insulated contacts. and continues with the patterning of the first conductive layer, called P1. Optional 15 The next step is the placement of the load-bearing layer. The load-bearing layer consists of multiple It may consist of layers or have no layers at all. Then the absorber layer is placed. Furthermore... Then, an optional counterweight layer is added. The counterweight layer can have multiple layers. It may consist of layers or may have no layers at all. In traditional PV module devices, the P2 plot... This is achieved by removing the layers above the first conductive layer. The P2 diagram is 20 to P1. The second conductive layer is constructed either as a parallel line or as point openings adjacent to P1. It is placed on top of the active layer or, if applicable, on top of the load-bearing layer. The final step in the process is drawing the second conductive layer. After this step, the series of adjacent cells... 2 The interconnection is completed. Figures (1) and (2) show the production of conventional PV module devices. It shows the steps. The main problem with having interconnect processing is that each drawing or doping parameter... the need for a lot of time to optimize and the interruption of production steps This is necessary. In addition to time and labor costs, the material handling process involves perovskite, CdTe 5 And many solar cell technologies, such as CIGS, contain toxic material particles or vapors. This can lead to exposure. Finally, in a conventional P2 interconnection region, at the very bottom Direct contact is formed between the conductive material and the absorbing layer. More often, materials like copper or silver are used. less stable conductive materials diffuse into the active layer and cell degradation occurs over time. It is known to accelerate. 10 Document US9452992B2 describes the interconnection path using a laser source instead of a laser drawing. It describes a process that increases conductivity. Laser irradiation to the targeted interconnect path. Through this process, the semiconductor thin film material becomes more metallic. Document US20090145472A1 describes the conductivity of the interconnecting path through a doping method. It explains that the conductivity of the interconnect path has been increased by 15 by the inclusion of dopant elements. is increased. Shapes FIGURE 1: Flowchart of conventional PV generation (previous technique) FIGURE 2: Illustration of the steps involved in traditional PV generation (previous technique) a) Placement of the first conductive layer on a substrate 20 b) Laser drawing for isolating the first conductive layer of adjacent cells (P1) c) Placement of the load-bearing layer d) Placement of the absorber layer on top of the load-bearing layer e) Placement of a counter-charge layer on top of the absorber layer f) Laser drawing to create an intermediate connection path between adjacent cells (P2) 25 g) Placement of a second conductive layer on top of the counter-charge layer h) Laser drawing for electrically isolating the second conductive layer (P3) FIGURE 3: Flowchart of PV generation without P2 (invention) FIGURE 4: Illustration of the steps involved in P2-free PV generation (invention) a) Placement of the first conductive layer on a substrate 30 3 b) Laser drawing for isolating the first conductive layer of adjacent cells (P1) c) Placement of the load-bearing layer d) Placement of the absorber layer on top of the load-bearing layer e) Placement of a counter-charge layer on top of the absorber layer f) Placement of the second conductive layer on top of the counter-charge layer 5 g) Laser drawing for electrically isolating the second conductive layer (P3) FIGURE 5: JV curve of the fabricated P2-free perovskite solar module. References in the Figures (1) Substrate (2) First conductive layer 10 (3) P1: Insulation line of the first conductive layer (4) Load bearing layer (5) Photo-absorbing layer (6) Opposite load-bearing layer (7) P2: Interconnection area of ​​adjacent photovoltaic cells 15 (8) Second conductive layer (9) P3: Insulation line of the second conductive layer Detailed Description of the Invention The invention is an interconnection method that does not require a P2 drawing. In conventional PV thin-film modules, The processed P2 drawing region is called the interconnection region. The first and second 20 of adjacent cells The ohmic contact, located in the interconnection region between the conductive layers, allows current to flow from one cell to another. It provides a path for flow to the other. In this invention, the region between P1 and P3 is left untreated. Each This region between a photovoltaic (PV) cell contains reverse-connected diodes. The reverse bias voltage Applying this after a certain value transforms reverse-connected diodes into low-resistance resistors. These resistors form the conduction paths for the photon-generated current in the active areas of the MIMs. 25 Adjacent cells are connected via these low-resistance resistor paths. Especially low-current generating. In PV applications, power loss is related to the square of the current multiplied by the resistance, so this resistance is important. It is easily tolerated. Therefore, it does not lead to performance degradation in MIMs. As mentioned above, the main problem with having interconnect processing is the drawing or Optimizing the doping parameters requires a lot of time, and production is 30 4 The need to interrupt the protocols. In this context, the invention addresses four main problems. solves: (1) A shorter production from two different perspectives, as a drawing process was removed from the production protocol. It provides the duration. a. Transferring the films to different systems, possibly in different locations, and P2 laser processing 5 Process time, including other factors, is eliminated. b. The optimization time for P2 is eliminated. (2) Since material removal is prevented during P2, possible toxic material vapors or Exposure to particles is also prevented. (3) Direct contact between the bottom contact material and the photo-absorbing layer 10 Since this is prevented, one of the MIM decay channels is blocked. In general, the production of photovoltaic MIMs without P2 interconnection diagrams involves interconnection. It simplifies the process and increases the reliability and repeatability of MIM. Figure (3) and Figure (4) shows the steps for producing PV without P2. The process begins with a substrate (1) material on which all layers will be placed. Substrate 15 The material can typically be glass, tile, steel, plastics, or a semiconductor such as Si. Substrate If the material is opaque to the relevant light spectrum, the photovoltaic device is in a superstrate configuration. It is activated. Otherwise, if the substrate material is transparent to the same wavelength range. Photovoltaic devices can operate in both substrate and superstructure configurations. The process begins with the placement of the first conductive layer (2). The first conductive layer (2) material is 20 preferably from metals (e.g., Cu, Ag, Al, Au), dielectric-metal-dielectric multilayer structures (e.g. from MoOx / Ag / MoOx) or transparent conductive oxides (e.g., indium tin oxide, fluorine-doped tin oxide) These contact materials are selected. They utilize photon-generated carriers, i.e., positively charged gaps or It is used to collect and transfer negatively charged electrons. P1 (3), which is the insulation line of the first conductive layer, is the laser used to create insulated contacts 25 or is produced by mechanical process (knife, shadow mask etc.). Thanks to this drawing (P1), serial intermediate To establish the connection, one of the poles of the interconnected cells is electrically isolated. It is done. In one configuration of the invention, the charge-carrying layer (4) is placed on the first conductive layer (2). The load-carrying layer (4) is placed. It carries a single type of load, namely positive charges (voids) or It functions as a carrier, transporting negative charges (electrons) to the contact layers. Charge transport layer (4), preferably nickel oxides (NiOx), tin oxides (SnOx), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), 2,2',7,7'-Tetra(N,N-di-p-tolyl)amino-9,9-spirobifluorene (Spiro-5 TTB), zinc oxide (ZnOx), N2,N2,N2′,N2′,N7,N7,N7′,N7′-oktakis(4-methoxyphenyl)-9,9′-spirobi[9H- fluorene]-2,2′,7,7′-tetramine (Spiro-O-MeTAD), titanium oxides (TiOx), Poly[bis(4-phenyl)(2,4,6- [trimethylphenyl)amine] (PTAA), [6,6]-Phenyl-C61-butyric acid methyl ester (PCBM) or Fullerene (C60) It can consist of p-type or n-type materials. In another configuration of the invention, the load-carrying layer (4) functions as a single transport layer. It consists of multiple layers. Additional layers include a passivation layer, a buffer layer, or... It can function as an interface layer. These layers are preferably made of lithium fluoride (LiF), 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP), [6,6]-Phenyl-C61-butyric acid methyl ester (PCBM), tin oxides Examples include (SnOx) and phenethylammonium iodide (PEAI). In another configuration of the invention, any payload layer 15 is placed on the active layer. It is not placed. Instead, charge transfer occurs from the active layer to the first conductive layer. It happens. The next step in the process involves perovskites, organic absorbers, Group III / V semiconductors, Group II / VI group of semiconductors, any thin film including amorphous Si or quantum dots. The photo-absorbing layer (5) is placed. The photo-absorbing layer is the absorber 20 The material is sensitive to light with energies equal to or greater than its band gap. When light falls on the layer (5) in the gap, it produces charge carriers. In one configuration of the invention, the counter-charge carrier layer (6) is placed on the photo-absorbing layer (5). is placed. If the charge transport layer (4) is selected as a p-type semiconductor, the opposite charge transport layer (6) n-type semiconductor materials. These charge-carrying materials can carry only one type of charge, namely positive charges. as a carrier that transports (vacuums) or negative charges (electrons) to the contact layers (2, 8). It functions. In another configuration of the invention, the opposing load-carrying layer (6) is used as a single load-carrying layer. It consists of multiple layers that perform a function. Additional layers include: passivation layer, buffer layer. 6 or can function as an interface layer. These layers are preferably lithium fluoride (LiF), 2,9- dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), [6,6]-Phenyl-C61-butyric acid methyl ester (PCBM), tin Examples include oxides (SnOx) and phenethylammonium iodide (PEAI). In another configuration of the invention, any opposing charge-carrying layer is placed on top of the active layer. It is not placed. Instead, the opposite charge transfer occurs from the active layer to the secondary conductive layer. It happens. In conventional PV module devices, the P2 drawing is done at this step, namely the second conductive layer (8) This is done before installation. However, the P2 drawing is not required in the process that is the subject of the invention. The process described in the invention continues with the placement of the second conductive layer (8). Metals, Dielectric-metal-dielectric complexes, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), 10 hydrogenated indium oxide, indium zinc oxides (IZO), aluminum-doped zinc oxides Conductive metal oxides such as (AZO), conductive organic materials such as graphene, and carbon electrodes, These contact materials are alternative materials that can be used as the second conductive layer (8). The photon produced in the photo-absorbing layer (5) and flowing through the transport layers (4, 6) It functions to collect carriers. 15 As the final step of the process that is the subject of the invention, the second conductive layer (8), the second conductive layer (8) It is drawn in such a way as to ensure electrical insulation. This step ensures P3. After this step, the adjacent The serial interconnection of the cells is completed. The invention eliminates the P2 step in the production process. It is particularly suitable for low-current photovoltaic applications. In devices, high contact resistance due to reverse breakdown diode in the interconnection area 20 It is negligible. The interconnection of adjacent cells is the region between the P1 and P3 diagrams. This is ensured. The interconnection principles have been explained above. In a preferred configuration, perovskite solar modules are manufactured without using the P2 diagram. For example, perovskite solar modules consisting of series-connected (4) cells were produced and LED light Current-voltage measurements were made under illumination. P2 perovskite 25 without drawing lines. The electrical performance of photovoltaic modules under LED lighting (~1000 lux) is shown in Figure (5). and is shown in Table (1). 7 1. The linear increase in Voc value indicates that the individual cells are separate without any shunt loss. This indicates that they are successfully connected in series. 2. The fill factor (FF) parameter directly relates to the series resistance in the cell or module structure. It is a performance benchmark. The FF value of 86.3% obtained in the produced perovskite solar module, This means there is no significant additional series resistance in the module. 5 Table 1. JV parameters of a fabricated perovskite solar module without P2 sketch lines. Voltage (V) Flow Density (mA / cm2) Filling Factor (%) Productivity (%) P1 width (µm) P1-P3 distance (mm) P3 width (µm) 3.33 0.02 86.3 16.2 (23.14) 50 1.5 75 After the application of relatively high voltages, these regions consisting of reverse-connected diodes reverse. It undergoes a breakdown. After the breakdown, it transforms into interconnected resistors and conducts current in Ohms. It complies with the law. Especially in low-light interiors where the current generated by photons is very low. In spatial applications, these resistances lead to significant electrical losses during operation. It provides an interconnection without opening. This situation is the pre-fabricated current-voltage curve given in Figure (5). This is clearly demonstrated by the fill factor of perovskite solar modules.

Claims

8 REQUESTS 1. A solar module with at least two cells, characterized by: a. first conductive layer as the upper electrode layer (2), b. first conductive layer (2) P1 insulation line (3), c. a photoactive layer (5), 5 d. second conductive layer as bottom electrode layer (8) and e. the second conductive layer (8) should contain the P3 insulation line (9) and first conductive layer of the cell (2) and second conductive layer of the adjacent cell (8) The absence of direct contact between them.

2. It is a solar module according to claim 1, and its characteristics are; the first conductive layer (2) and the photoactive layer 10 (5) is that it contains at least one load-carrying layer (4).

3. It is a solar module according to claim 2, and its feature is; photoactive layer (5) and second conductive layer. (8) also includes at least one opposing charge carrying layer (6).

4. It is a solar module according to claim 2, and its characteristic is that the load-bearing layer is (4) p-type or n-type. It is the material. 15 5. It is a solar module according to claim 3, and its characteristic is that the opposite load carrying layer (6) carries the load. When the layer (4) is n-type material, it is p-type; load-bearing layer (4) is p-type material When this happens, it means it is of type n.

6. It is a solar module according to claim 1, and its characteristic is that the mentioned photoactive layer (5) is perovskites, organic absorbers, Group III / V semiconductors, Group II / VI semiconductors, amorphous Si or 20 It is the selection of quantum dots.

7. It is a solar module according to Claim 1, and its characteristic is that it is also on all layers (2, 5, 8). It involves a substrate into which it is placed or transferred.

8. It is a solar module according to claim 1, and its feature is; the first conductive layer (2) and the second conductive layer (8) material metals, dielectric-metal-dielectric multilayer structures, 25 The choice is between conductive metal oxides or conductive organic materials.

9. It is a solar module according to claim 8, and its characteristic is that the aforementioned conductive metal oxide is indium tin. oxide, fluorine-doped tin oxide, indium zinc oxides, hydrogenated indium oxide, or The choice should be among aluminum-doped zinc oxides.

10. It is a solar module according to claim 8, and its characteristic is that the aforementioned conductive organic material is graphene 30. or they are carbon electrodes.

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