Semiconductor devices and semiconductor memory devices

Abstract

This embodiment relates to a semiconductor device, a semiconductor memory device, and a method for manufacturing a semiconductor device. The semiconductor device of the present invention includes a first conductive layer, a second conductive layer, an oxide semiconductor layer disposed between the first conductive layer and the second conductive layer, a gate electrode surrounding the oxide semiconductor layer, and a gate insulating film disposed between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer comprises at least one of indium, gallium, zinc, aluminum, tin, titanium, silicon, germanium, copper, arsenic, and tungsten, and oxygen, and has a first end and a second end. The first conductive layer comprises at least one of nitrogen, sulfur, selenium, tellurium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, bismuth, lanthanum, yttrium, zinc, cadmium, and mercury (i.e., a first element), and indium, tin, and oxygen. The first end of the oxide semiconductor layer is connected to the first conductive layer.